WO2017033440A1 - Organic el display device - Google Patents
Organic el display device Download PDFInfo
- Publication number
- WO2017033440A1 WO2017033440A1 PCT/JP2016/003764 JP2016003764W WO2017033440A1 WO 2017033440 A1 WO2017033440 A1 WO 2017033440A1 JP 2016003764 W JP2016003764 W JP 2016003764W WO 2017033440 A1 WO2017033440 A1 WO 2017033440A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic
- display device
- buffer layer
- sealing
- film
- Prior art date
Links
- 239000010408 film Substances 0.000 claims abstract description 119
- 238000007789 sealing Methods 0.000 claims abstract description 92
- 230000004888 barrier function Effects 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000010409 thin film Substances 0.000 claims abstract description 74
- 230000002093 peripheral effect Effects 0.000 claims description 48
- 239000011347 resin Substances 0.000 claims description 39
- 229920005989 resin Polymers 0.000 claims description 39
- 239000003566 sealing material Substances 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 259
- 239000000463 material Substances 0.000 description 23
- 239000011777 magnesium Substances 0.000 description 18
- 239000011575 calcium Substances 0.000 description 16
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 239000002585 base Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000011734 sodium Substances 0.000 description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 229910052744 lithium Inorganic materials 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 8
- 229910052791 calcium Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 polysiloxane Polymers 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052789 astatine Inorganic materials 0.000 description 4
- RYXHOMYVWAEKHL-UHFFFAOYSA-N astatine atom Chemical compound [At] RYXHOMYVWAEKHL-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000008376 fluorenones Chemical class 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 150000004866 oxadiazoles Chemical class 0.000 description 3
- 150000007978 oxazole derivatives Chemical class 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 2
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920002396 Polyurea Polymers 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000007857 hydrazones Chemical class 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004986 phenylenediamines Chemical class 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 150000003219 pyrazolines Chemical class 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- NVWCQPYOGQBFDC-UHFFFAOYSA-N 1,2,3-tris(2-phenylethenyl)benzene Chemical class C=1C=CC=CC=1C=CC(C=1C=CC=2C=CC=CC=2)=CC=CC=1C=CC1=CC=CC=C1 NVWCQPYOGQBFDC-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- 150000004057 1,4-benzoquinones Chemical class 0.000 description 1
- YZVWKHVRBDQPMQ-UHFFFAOYSA-N 1-aminopyrene Chemical class C1=C2C(N)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 YZVWKHVRBDQPMQ-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N 4-penten-2-one Chemical class CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical class C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229940058303 antinematodal benzimidazole derivative Drugs 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 125000003785 benzimidazolyl group Chemical class N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 150000001788 chalcone derivatives Chemical class 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- FIZIRKROSLGMPL-UHFFFAOYSA-N phenoxazin-1-one Chemical compound C1=CC=C2N=C3C(=O)C=CC=C3OC2=C1 FIZIRKROSLGMPL-UHFFFAOYSA-N 0.000 description 1
- UOMHBFAJZRZNQD-UHFFFAOYSA-N phenoxazone Natural products C1=CC=C2OC3=CC(=O)C=CC3=NC2=C1 UOMHBFAJZRZNQD-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical class [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
Definitions
- the present invention relates to an organic EL display device.
- a self-luminous organic EL display device using an organic EL (electroluminescence) element has attracted attention as a display device that replaces a liquid crystal display device.
- organic EL display device a sealing structure in which a sealing film covering the organic EL element is configured by a laminated film of an inorganic film and an organic film in order to suppress deterioration of the organic EL element due to mixing of moisture, oxygen, or the like. has been proposed.
- a sealing body (sealing film) covering an organic EL element includes a first barrier layer made of an inorganic material, a first buffer layer made of a resin material, and a first made of an inorganic material.
- An organic EL display device is disclosed in which a two-barrier layer, a second buffer layer made of a resin material, and a third barrier layer made of an inorganic material are sequentially laminated.
- the first, second and third barrier layers made of an inorganic material are laminated at the peripheral end portion of the array substrate constituting the organic EL display device.
- the first and second buffer layers made of a resin material are not arranged between the first, second and third barrier layers. Therefore, since the stress generated in the first, second, and third barrier layers is not relieved by the first and second buffer layers at the peripheral edge portion of the sealing body of the organic EL display device, the sealing body is peeled off. Etc. may occur and the sealing performance may be reduced.
- the first and second buffer layers are not disposed at the peripheral edge of the sealing body of the organic EL display device. Since the foreign matter easily breaks through the first, second and third barrier layers, the sealing performance may be deteriorated.
- the present invention has been made in view of such points, and an object of the present invention is to suppress a decrease in sealing performance at the peripheral end portion of the sealing film.
- an organic EL display device includes a display region for displaying an image, a base substrate in which a non-display region is defined around the display region, and the display region of the base substrate.
- a plurality of barrier layers comprising an organic EL element provided on the display region and a sealing film provided on the display region and the non-display region so as to cover the organic EL device, wherein the sealing film is an inorganic film
- the peripheral portion in the non-display area has a thin thin film portion thinner than the film thickness on the organic EL element.
- the buffer layer has a thin thin film portion thinner than the film thickness on the organic EL element in the peripheral portion in the non-display area of the organic EL element, the peripheral end portion of the sealing film Decrease in sealing performance can be suppressed.
- FIG. 1 is a plan view showing a schematic configuration of the organic EL display device according to the first embodiment of the present invention.
- FIG. 2 is a cross-sectional view showing a schematic configuration of the organic EL display device taken along line II-II in FIG.
- FIG. 3 is a cross-sectional view showing the internal configuration of the organic EL display device according to the first embodiment of the present invention.
- FIG. 4 is a cross-sectional view showing an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention.
- FIG. 5 is a cross-sectional view showing a model experiment of the organic EL display device according to the first embodiment of the present invention.
- FIG. 6 is a graph showing the relationship between the buffer layer thickness and the moisture permeation distance obtained in the model experiment of the organic EL display device according to the first embodiment of the present invention.
- FIG. 7 is a sectional view showing a schematic configuration of an organic EL display device according to the second embodiment of the present invention.
- FIG. 8 is a cross-sectional view showing a schematic configuration of an organic EL display device according to the third embodiment of the present invention.
- FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 50a according to the present embodiment.
- FIG. 2 is a cross-sectional view showing a schematic configuration of the organic EL display device 50a along the line II-II in FIG.
- FIG. 3 is a cross-sectional view showing the internal configuration of the organic EL display device 50a.
- FIG. 4 is a cross-sectional view showing the organic EL layer 16 constituting the organic EL display device 50a.
- the organic EL display device 50a includes a transparent resin substrate 10 provided as a base substrate, an organic EL element 18 provided on the resin substrate 10 (indirectly above), And a sealing film 25 a provided to cover the EL element 18.
- the organic EL element 18 is provided in a rectangular shape in plan view, whereby the display area D for performing image display is defined in a rectangular shape.
- D a plurality of pixels are arranged in a matrix. In each pixel, for example, a sub-pixel for performing red gradation display, a sub-pixel for performing green gradation display, and a sub-pixel for performing blue gradation display are adjacent to each other.
- a non-display area N is defined in a frame shape around the display area D.
- a base coat film 11, a plurality of TFTs 12, and an interlayer insulating film 13 are provided in this order from the resin substrate 10 side between the resin substrate 10 and the organic EL element 18. ing.
- the resin substrate 10 is a plastic substrate made of polyimide resin, for example.
- a transparent resin substrate having flexibility and insulation is illustrated as the base substrate.
- the base substrate is a transparent glass substrate having insulation, an opaque metal thin plate having conductivity, and the like. It may be.
- the base coat film 11 is provided on the resin substrate 10 as shown in FIG.
- the base coat film 11 is, for example, an inorganic insulating film such as a silicon oxide film or a silicon nitride film.
- the TFT 12 is a switching element provided for each sub-pixel on the base coat film 11 as shown in FIG.
- the TFT 12 includes, for example, a gate electrode provided on the base coat film 11, a gate insulating film provided so as to cover the gate electrode, and a semiconductor layer provided on the gate insulating film so as to overlap the gate electrode. And a source electrode and a drain electrode provided on the semiconductor layer so as to face each other.
- the bottom gate type TFT 12 is illustrated, but the TFT 12 may be a top gate type TFT.
- the interlayer insulating film 13 is provided so as to cover a portion other than a part of the drain electrode of each TFT 12.
- the interlayer insulation film 13 is comprised by transparent organic resin materials, such as an acrylic resin, for example.
- the organic EL element 18 is provided in the display region D, and as shown in FIG. 3, a plurality of first electrodes 14, an edge cover 15, a plurality of organic EL layers 16, and a second electrode provided in order on the interlayer insulating film 13. An electrode 17 is provided.
- the plurality of first electrodes 14 are provided in a matrix on the interlayer insulating film 13 so as to correspond to the plurality of subpixels.
- the first electrode 14 is connected to the drain electrode of each TFT 12 through a contact hole formed in the interlayer insulating film 13.
- the first electrode 14 has a function of injecting holes into the organic EL layer 16.
- the first electrode 14 is more preferably formed of a material having a large work function in order to improve the efficiency of hole injection into the organic EL layer 16.
- the first electrode 14 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF).
- the material constituting the first electrode 14 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation.
- the material constituting the first electrode 14 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. There may be.
- the first electrode 14 may be formed by laminating a plurality of layers made of the above materials. Examples of the material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).
- the edge cover 15 is provided in a lattice shape so as to cover the peripheral edge portion of each first electrode 14.
- the material constituting the edge cover 15 include silicon nitride (SiO 2 ), silicon nitride such as trisilicon tetranitride (Si 3 N 4 ) (SiNx (x is a positive number)), silicon oxynite.
- An inorganic film such as a ride (SiNO) or an organic film such as a polyimide resin, an acrylic resin, a polysiloxane resin, or a novolac resin can be used.
- the plurality of organic EL layers 16 are arranged on each first electrode 14 and are provided in a matrix so as to correspond to the plurality of sub-pixels.
- the organic EL layer 16 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer provided in this order on the first electrode 14. 5 is provided.
- the hole injection layer 1 is also called an anode buffer layer, and has a function of improving the efficiency of hole injection from the first electrode 14 to the organic EL layer 16 by bringing the energy levels of the first electrode 14 and the organic EL layer 16 close to each other.
- a material constituting the hole injection layer for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, Examples include hydrazone derivatives and stilbene derivatives.
- the hole transport layer 2 has a function of improving the hole transport efficiency from the first electrode 14 to the organic EL layer 16.
- examples of the material constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, triazole derivatives, oxadiazole.
- Derivatives imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, Examples include hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
- the light emitting layer 3 when voltage is applied by the first electrode 14 and the second electrode 17, holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and the holes and electrons are recombined. It is an area.
- the light emitting layer 3 is formed of a material having high light emission efficiency. Examples of the material constituting the light emitting layer 3 include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, and coumarin derivatives.
- the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
- examples of the material constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, and fluorenone derivatives. , Silole derivatives, metal oxinoid compounds and the like.
- the electron injection layer 5 has a function of bringing the energy levels of the second electrode 17 and the organic EL layer 16 closer to each other, and improving the efficiency with which electrons are injected from the second electrode 17 into the organic EL layer 16.
- the drive voltage of the organic EL element 18 can be lowered.
- the electron injection layer 5 is also called a cathode buffer layer.
- a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride.
- Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO), and the like can be given.
- the second electrode 17 is provided so as to cover each organic EL layer 16 and the edge cover 15.
- the second electrode 17 has a function of injecting electrons into the organic EL layer 16.
- the second electrode 17 is more preferably composed of a material having a small work function in order to improve the efficiency of electron injection into the organic EL layer 16.
- the second electrode 17 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF).
- the second electrode 17 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidized astatine (AtO 2).
- the second electrode 17 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. .
- the second electrode 17 may be formed by stacking a plurality of layers made of the above materials.
- Examples of materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium.
- (Na) / potassium (K) lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) Etc.
- the sealing film 25a is provided in the display area D and the non-display area N so as to cover the organic EL element 18, and has a function of protecting the organic EL element 18 from moisture and oxygen. As shown in FIG. 2, the sealing film 25a includes a first barrier layer 19a, a first buffer layer 20a, a second barrier layer 21a, a second buffer layer 22a, and a second buffer layer provided in this order from the organic EL element 18 side. 3 barrier layers 23a are provided.
- the first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a are, for example, silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and trisilicon tetranitride (Si 3 N 4 ). It is formed of an inorganic film such as silicon nitride (SiNx (x is a positive number)) or silicon carbonitride (SiCN).
- the first buffer layer 20a and the second buffer layer 22a are formed of an organic film such as acrylate, polyurea, parylene, polyimide, polyamide or the like.
- the first buffer layer 20 a has a thickness Ta (for example, about 2.5 ⁇ m) on the organic EL element 18 in the peripheral portion in the non-display region N of the organic EL element 18.
- the second buffer layer 22 a has a thickness Tc (for example, about 2.5 ⁇ m) on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18.
- a flat thin film portion 22t having a thin film thickness Td (for example, about 0.5 ⁇ m to 1.5 ⁇ m) is provided.
- the cross-sectional shapes of the first buffer layer 20 a and the second buffer layer 22 a are formed in a stepped shape that decreases toward the outside in the peripheral portion of the organic EL element 18.
- the thin film portion 20 t of the first buffer layer 20 a and the thin film portion 22 t of the second buffer layer 22 a are provided over the entire circumference of the organic EL element 18.
- the thin film portion 20t of the first buffer layer 20a and the thin film portion 22t of the second buffer layer 22a are provided so as to overlap each other in plan view (as viewed from the substrate thickness direction).
- the width of the thin film portion 20t of the first buffer layer 20a and the thin film portion 22t of the second buffer layer 22a is, for example, about 0.1 mm to 3 mm.
- the organic EL display device 50a having the above configuration has flexibility, and can display an image by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel.
- the organic film is formed on the surface of the resin substrate 10 made of polyimide resin using a known method.
- EL element 18 first electrode 14, edge cover 15, organic EL layer 16 (hole injection layer 1, hole transport layer 2, light emitting layer 3, electron transport layer 4, electron injection layer 5), second electrode 17) Form.
- an inorganic film and an organic film are formed by a CVD (Chemical Vapor Deposition) method, a vapor deposition method, or the like so as to cover the organic EL element 18 to form a sealing film 25a.
- CVD Chemical Vapor Deposition
- the first buffer layer 20a and the second buffer layer 22a constituting the sealing film 25a are formed, for example, in the peripheral portion in the non-display region N of the organic EL element 18 using a film formation mask.
- the thin film portions 20t and 22t are formed by reducing the film formation amount, or once forming a uniform film thickness, and then thinning the peripheral portion in the non-display region N of the organic EL element 18 by dry etching. .
- FIG. 5 is a cross-sectional view showing a model experiment of the organic EL display device 50a.
- FIG. 6 is a graph showing the relationship between the buffer layer thickness T and the moisture permeation distance L obtained in the model experiment of the organic EL display device 50a.
- a 0.5 ⁇ m thick SiNx film, a 0.5 ⁇ m thick, 1.5 ⁇ m or 2.5 ⁇ m thick SiCN film is formed on a 0.7 mm thick glass substrate 6 by CVD. And a SiNx film having a thickness of 0.5 ⁇ m are sequentially formed, and three types of test specimens including the first barrier layer 7, the buffer layer 8, and the second barrier layer 9 and having different buffer layer 8 thicknesses are produced. To do.
- the organic EL display device 50a of the present embodiment As described above, according to the organic EL display device 50a of the present embodiment, the following effects can be obtained.
- the sealing film 25a covering the organic EL element 18 provided in the display area D of the resin substrate 10 is provided in the display area D and the non-display area N, and includes a first barrier layer 19a and a second barrier film made of an inorganic film.
- a barrier layer 21a and a third barrier layer 23a are provided.
- the sealing film 25a includes a first buffer layer 20a made of an organic film between the adjacent first barrier layer 19a and second barrier layer 21a. Further, the sealing film 25a includes a second buffer layer 22a made of an organic film between the adjacent second barrier layer 21a and third barrier layer 23a.
- the first buffer layer 20a has a flat thin film portion 20t having a film thickness Tb smaller than the film thickness Ta on the organic EL element 18 in the peripheral portion of the organic EL element 18 in the non-display region N.
- the second buffer layer 22 a has a flat thin film portion 22 t having a thickness Td smaller than the thickness Tc on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18. . Therefore, also in the peripheral part in the non-display region N of the organic EL element 18, the thin film part 20t and the second buffer part 20t of the first buffer layer 20a are interposed between the first barrier layer 19a, the second barrier layer 21a and the third barrier layer 23a.
- a thin film portion 22t of the buffer layer 22a is disposed. Accordingly, the stress generated in the first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a can be relieved by the first buffer layer 20a and the second buffer layer 22a. Generation
- production of peeling etc. can be suppressed.
- the first buffer layer 20a Since the thin film portion 20t and the thin film portion 22t of the second buffer layer 22a are interposed, it is difficult for the foreign matter to penetrate the first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a.
- the film thicknesses Tb and Td of the first buffer layer 20a and the second buffer layer 22a are thinner than the film thicknesses Ta and Tc on the organic EL element 18.
- moisture M from the peripheral edge part of the sealing film 25a can be suppressed.
- the occurrence of film peeling or the like at the peripheral end portion of the sealing film 25a is suppressed, the breakage due to foreign matters at the peripheral end portion of the sealing film 25a is suppressed, and the peripheral end portion of the sealing film 25a is suppressed. Since the permeation rate of moisture M from can be suppressed, it is possible to suppress a decrease in sealing performance at the peripheral end of the sealing film 25a.
- the thin film portion 20t and the thin film portion 22t are respectively provided in the first buffer layer 20a and the second buffer layer 22a, the thin film portion is provided only in one of the first buffer layer 20a and the second buffer layer 22a. Compared with the case where it is, the fall of the sealing performance in the peripheral edge part of the sealing film 25a can be suppressed.
- FIG. 7 is a cross-sectional view showing a schematic configuration of the organic EL display device 50b according to the present embodiment.
- the same portions as those in FIGS. 1 to 6 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the organic EL display device 50a that does not include the sealing substrate is illustrated, but in this embodiment, the organic EL display device 50b that includes the sealing substrate 40 is illustrated.
- the organic EL display device 50 b includes an element substrate 30 and a sealing substrate 40 provided so as to face each other, and a seal provided in a frame shape between the element substrate 30 and the sealing substrate 40. And a sealing resin layer 46 provided in a region surrounded by the sealing material 45 between the element substrate 30 and the sealing substrate 40.
- the element substrate 30 has substantially the same configuration as the organic EL display device 50 a of the first embodiment.
- the element substrate 30 having substantially the same configuration as that of the organic EL display device 50a of the first embodiment is exemplified, but the element substrate 30 is an organic EL display of a third embodiment described later.
- the device 50c may be used.
- the sealing substrate 40 includes, for example, a resin substrate and a base coat film provided on the resin substrate.
- the resin substrate of the sealing substrate 40 has substantially the same configuration as the resin substrate 10 of the first embodiment.
- the base coat film of the sealing substrate 40 has substantially the same configuration as the base coat film 11 of the first embodiment.
- the sealing material 45 is provided so that the element substrate 30 and the sealing substrate 40 are bonded to each other at the peripheral edge of the substrate.
- a material for forming the sealing material 45 for example, an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, or the like having ultraviolet curable properties and / or thermosetting properties may be used.
- the sealing resin layer 46 has a getter function for adsorbing moisture, oxygen, and the like.
- examples of the material constituting the sealing resin layer 46 include thermosetting epoxy resin and silicon resin.
- the sealing resin layer 46 contains, for example, metal oxides such as calcium oxide (CaO), barium oxide (BaO), and aluminum oxide (Al 2 O 3 ), activated carbon, silica gel, zeolite, and the like. .
- the organic EL display device 50b having the above configuration has flexibility, and can display an image by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel.
- the organic EL display device 50b having the above-described configuration can be manufactured by the following steps.
- the sealing resin is arranged in a frame shape on the surface of the organic EL display device 50a manufactured by the manufacturing method of the first embodiment, that is, the element substrate 30 by, for example, a dispenser method, and the inner side of the sealing resin.
- the filling resin is dropped on the substrate.
- the element substrate 30 on which the sealing resin and the filling resin are arranged and the sealing substrate 40 are bonded together in a reduced pressure atmosphere, and then the reduced pressure atmosphere is released, so that the outside of the element substrate 30 and the sealing substrate 40 is removed. Pressurize the surface.
- the panel to be irradiated is heated to cure the sealing resin and the filling resin, so that the sealing material 45 and the sealing material are sealed.
- a resin layer 46 is formed.
- the organic EL display device 50b of the present embodiment As described above, according to the organic EL display device 50b of the present embodiment, the following effect (6) can be obtained in addition to the above (1) to (5).
- the sealing substrate 40 provided to face the element substrate 30, the sealing material 45 provided between the element substrate 30 and the sealing substrate 40, and the gap between the element substrate 30 and the sealing substrate 40. Since the sealing resin layer 46 provided in the region surrounded by the sealing material 45 is provided, the deterioration of the organic EL element 18 can be suppressed and the reliability of the organic EL display device 50b can be improved.
- FIG. 8 is a cross-sectional view illustrating a schematic configuration of the organic EL display device 50c according to the present embodiment.
- the organic EL display devices 50a and 50b in which the cross-sectional shape of the end portion of the buffer layer is formed in a staircase shape are illustrated.
- the cross-section of the end portion of the buffer layer is illustrated.
- An organic EL display device 50c having a shape confined by a thin film portion is illustrated.
- the organic EL display device 50 c includes a transparent resin substrate 10 provided as a base substrate, an organic EL element 18 provided on the resin substrate 10 (indirectly above), and an organic EL element 18. And a sealing film 25b provided so as to cover the surface.
- the sealing film 25b is provided in the display area D and the non-display area N so as to cover the organic EL element 18, and has a function of protecting the organic EL element 18 from moisture and oxygen. Further, as shown in FIG. 8, the sealing film 25b includes a first barrier layer 19a, a first buffer layer 20b, a second barrier layer 21b, a second buffer layer 22b, and a second buffer layer provided in this order from the organic EL element 18 side. 3 barrier layers 23b are provided.
- the second barrier layer 21b and the third barrier layer 23b are made of, for example, silicon nitride (SiNx (x)) such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and trisilicon tetranitride (Si 3 N 4 ). Is a positive number)), and is formed of an inorganic film such as silicon carbonitride (SiCN).
- SiNx (x) silicon oxide
- Al 2 O 3 aluminum oxide
- Si 3 N 4 trisilicon tetranitride
- SiCN silicon carbonitride
- the first buffer layer 20b and the second buffer layer 22b are formed of an organic film such as acrylate, polyurea, parylene, polyimide, polyamide or the like.
- the first buffer layer 20 b has a thickness Ta (for example, about 2.5 ⁇ m) on the organic EL element 18 in the peripheral portion in the non-display region N of the organic EL element 18.
- the second buffer layer 22 b has a film thickness Tc (for example, about 2.5 ⁇ m) on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18.
- a flat thin film portion 22t having a thin film thickness Td (for example, about 0.5 ⁇ m to 1.5 ⁇ m) is provided.
- Td thin film thickness
- the cross-sectional shapes of the first buffer layer 20b and the second buffer layer 22b are confined by the thin film portion 20t and the thin film portion 22t in the peripheral portion in the non-display region N of the organic EL element 18, as shown in FIG. In other words, it is formed in a concave groove shape such as a U shape or a V shape.
- the thin film portion 20 t of the first buffer layer 20 b and the thin film portion 22 t of the second buffer layer 22 b are provided over the entire circumference of the organic EL element 18. Further, as shown in FIG.
- the thin film portion 20t of the first buffer layer 20b and the thin film portion 22t of the second buffer layer 22b are provided so as to overlap each other in plan view (as viewed from the substrate thickness direction).
- the width of the thin film portion 20t of the first buffer layer 20b and the thin film portion 22t of the second buffer layer 22b is, for example, about 0.1 mm to 3 mm.
- the organic EL display device 50c having the above configuration is flexible, and can display an image by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 via the TFT 12 in each sub-pixel.
- the organic EL display device 50c having the above-described configuration changes the distribution of film thickness when forming the inorganic film and the organic film in the method of manufacturing the organic EL display device 50a described in the first embodiment. Can be manufactured.
- the organic EL display device 50c of the present embodiment As described above, according to the organic EL display device 50c of the present embodiment, the following effect (7) can be obtained in addition to the above (1) to (4).
- the sealing film 25b covering the organic EL element 18 provided in the display region D of the resin substrate 10 is provided in the display region D and the non-display region N, and is a first barrier made of an inorganic film.
- a layer 19a, a second barrier layer 21b, and a third barrier layer 23b are provided.
- the sealing film 25b includes a first buffer layer 20b made of an organic film between the adjacent first barrier layer 19a and second barrier layer 21b.
- the sealing film 25b includes a second buffer layer 22b made of an organic film between the adjacent second barrier layer 21b and the third barrier layer 23b.
- the first buffer layer 20 b has a flat thin film portion 20 t having a thickness Tb thinner than the thickness Ta on the organic EL element 18 in the peripheral portion in the non-display region N of the organic EL element 18.
- the second buffer layer 22b has a flat thin film portion 22t having a thickness Td smaller than the thickness Tc on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18. . Therefore, even in the peripheral portion of the organic EL element 18 in the non-display region N, the thin film portion 20t and the second buffer layer 20b of the first buffer layer 20b are interposed between the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b.
- a thin film portion 22t of the buffer layer 22b is disposed.
- the stress generated in the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b can be relieved by the first buffer layer 20b and the second buffer layer 22b, so that the film of the sealing film 25b Generation
- production of peeling etc. can be suppressed.
- the first buffer layer 20b Since the thin film portion 20t and the thin film portion 22t of the second buffer layer 22b are interposed, it is difficult for the foreign matter to penetrate the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b.
- the film thicknesses Tb and Td of the first buffer layer 20b and the second buffer layer 22b are thinner than the film thicknesses Ta and Tc on the organic EL element 18.
- the permeation speed of the moisture M from the peripheral end portion of the sealing film 25b can be suppressed.
- the occurrence of film peeling or the like at the peripheral end portion of the sealing film 25b is suppressed, the breakage due to foreign matters at the peripheral end portion of the sealing film 25b is suppressed, and the peripheral end portion of the sealing film 25b is suppressed. Since the permeation rate of moisture M from can be suppressed, it is possible to suppress a decrease in sealing performance at the peripheral end portion of the sealing film 25b.
- the thin film portion 20t and the thin film portion 22t are respectively provided in the first buffer layer 20b and the second buffer layer 22b, only one of the first buffer layer 20b and the second buffer layer 22b is provided.
- the deterioration of the sealing performance at the peripheral end of the sealing film 25b can be suppressed as compared with the case where the thin film portion is provided.
- the cross-sectional shapes of the first buffer layer 20b and the second buffer layer 22b are confined by the thin film portion 20t and the thin film portion 22t in the peripheral portion in the non-display region N of the organic EL element 18.
- the penetration rate of moisture M from the peripheral end of the sealing film 25b can be suppressed by the thin film portion 20t and the thin film portion 22t.
- the organic EL display device in which the thin film portion of the first buffer layer and the thin film portion of the second buffer layer are overlapped with each other is illustrated, but the present invention is directed to the thin film portion of the first buffer layer and the second buffer layer.
- the present invention can also be applied to an organic EL display device in which the thin film portions of the layers do not overlap each other.
- the organic EL display device in which the thin film portions are formed in the first buffer layer and the second buffer layer is exemplified.
- the present invention is applied to one of the first buffer layer and the second buffer layer.
- the present invention can also be applied to an organic EL display device in which a thin film portion is formed.
- an organic EL display device having a five-layer sealing film of the third barrier layer / second buffer layer / second barrier layer / first buffer layer / first barrier layer is illustrated.
- the present invention also relates to an organic EL display device including a sealing film having a structure in which a buffer layer such as a three-layer structure of second barrier layer / buffer layer / first barrier layer is sandwiched between barrier layers. Can be applied.
- an organic EL layer having a five-layer structure of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer has been exemplified.
- a three-layer structure of a hole injection layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer may be employed.
- the organic EL display device using the first electrode as an anode and the second electrode as a cathode has been exemplified.
- the present invention reverses the stacked structure of the organic EL layers and uses the first electrode as a cathode.
- the present invention can also be applied to an organic EL display device using the second electrode as an anode.
- the organic EL display device including the element substrate using the TFT electrode connected to the first electrode as the drain electrode is illustrated.
- the present invention is not limited to the TFT connected to the first electrode.
- the present invention can also be applied to an organic EL display device including an element substrate whose electrode is called a source electrode.
- the present invention is useful for an organic EL display device.
- Non-display area 10 Non-display area 10
- Resin substrate (base substrate) 18
- Organic EL element 19a First barrier layer 20a, 20b First buffer layer 20t Thin film part 21a, 21b Second barrier layer 22a, 22b Second buffer layer 22t Thin film part 23a, 23b Third barrier layer 25a, 25b Sealing film 30
- Element substrate 40 Sealing substrate 45 Sealing material 46 Sealing resin layers 50a to 50c Organic EL display device
Abstract
The present invention is provided with: a base substrate (10); an organic EL element (18) that is provided on the base substrate (10); and a sealing film (25a) that is provided to cover the organic EL element (18). The sealing film (25a) has: a plurality of barrier layers (19a, 21a, 23a), each of which is formed of an inorganic film; and buffer layers (20a, 22a), each of which is formed of an organic film, and is provided between a pair of adjacent barrier layers (19a, 21a, 23a) among the barrier layers (19a, 21a, 23a). At the periphery of the organic EL element (18), the buffer layers (20a, 22a) respectively have flat thin film sections (20t, 22t) that are thinner than the film sections on the organic EL element (18).
Description
本発明は、有機ＥＬ表示装置に関するものである。
The present invention relates to an organic EL display device.
近年、液晶表示装置に代わる表示装置として、有機ＥＬ（electroluminescence）素子を用いた自発光型の有機ＥＬ表示装置が注目されている。ここで、有機ＥＬ表示装置では、水分や酸素等の混入による有機ＥＬ素子の劣化を抑制するために、有機ＥＬ素子を覆う封止膜を無機膜及び有機膜の積層膜で構成する封止構造が提案されている。
In recent years, a self-luminous organic EL display device using an organic EL (electroluminescence) element has attracted attention as a display device that replaces a liquid crystal display device. Here, in the organic EL display device, a sealing structure in which a sealing film covering the organic EL element is configured by a laminated film of an inorganic film and an organic film in order to suppress deterioration of the organic EL element due to mixing of moisture, oxygen, or the like. Has been proposed.
例えば、特許文献１には、有機ＥＬ素子を覆う封止体（封止膜）が、無機系材料からなる第１バリア層と、樹脂材料からなる第１バッファ層と、無機系材料からなる第２バリア層と、樹脂材料からなる第２バッファ層と、無機系材料からなる第３バリア層とを順に積層してなる有機ＥＬ表示装置が開示されている。
For example, in Patent Document 1, a sealing body (sealing film) covering an organic EL element includes a first barrier layer made of an inorganic material, a first buffer layer made of a resin material, and a first made of an inorganic material. An organic EL display device is disclosed in which a two-barrier layer, a second buffer layer made of a resin material, and a third barrier layer made of an inorganic material are sequentially laminated.
ところで、上記特許文献１に開示された有機ＥＬ表示装置では、その有機ＥＬ表示装置を構成するアレイ基板の周端部において、無機系材料からなる第１、第２及び第３バリア層が積層され、それらの第１、第２及び第３バリア層の間に樹脂材料からなる第１及び第２バッファ層が配置されない構造になっている。そのため、その有機ＥＬ表示装置の封止体の周端部では、第１、第２及び第３バリア層で発生する応力が第１及び第２バッファ層で緩和されないので、封止体の膜剥がれ等が発生して、封止性能が低下するおそれがある。また、その有機ＥＬ表示装置の封止体の周端部では、第１、第２及び第３バリア層の間に異物が存在すると、第１及び第２バッファ層が配置されていないために、異物が第１、第２及び第３バリア層を突き破り易くなるので、封止性能が低下するおそれがある。
By the way, in the organic EL display device disclosed in Patent Document 1, the first, second and third barrier layers made of an inorganic material are laminated at the peripheral end portion of the array substrate constituting the organic EL display device. The first and second buffer layers made of a resin material are not arranged between the first, second and third barrier layers. Therefore, since the stress generated in the first, second, and third barrier layers is not relieved by the first and second buffer layers at the peripheral edge portion of the sealing body of the organic EL display device, the sealing body is peeled off. Etc. may occur and the sealing performance may be reduced. In addition, at the peripheral edge of the sealing body of the organic EL display device, if foreign matter exists between the first, second, and third barrier layers, the first and second buffer layers are not disposed. Since the foreign matter easily breaks through the first, second and third barrier layers, the sealing performance may be deteriorated.
本発明は、かかる点に鑑みてなされたものであり、その目的とするところは、封止膜の周端部における封止性能の低下を抑制することにある。
The present invention has been made in view of such points, and an object of the present invention is to suppress a decrease in sealing performance at the peripheral end portion of the sealing film.
上記目的を達成するために、本発明に係る有機ＥＬ表示装置は、画像表示を行う表示領域、及び該表示領域の周囲に非表示領域が規定されたベース基板と、前記ベース基板の前記表示領域に設けられた有機ＥＬ素子と、前記有機ＥＬ素子を覆うように前記表示領域及び前記非表示領域に設けられた封止膜とを備え、前記封止膜が、無機膜からなる複数のバリア層と、該複数のバリア層のうち、隣り合う一対のバリア層の間に設けられた有機膜からなるバッファ層とを有する有機ＥＬ表示装置であって、前記バッファ層は、前記有機ＥＬ素子の前記非表示領域にある周辺部において、該有機ＥＬ素子上の膜厚よりも薄く平坦な薄膜部を有していることを特徴とする。
In order to achieve the above object, an organic EL display device according to the present invention includes a display region for displaying an image, a base substrate in which a non-display region is defined around the display region, and the display region of the base substrate. A plurality of barrier layers comprising an organic EL element provided on the display region and a sealing film provided on the display region and the non-display region so as to cover the organic EL device, wherein the sealing film is an inorganic film And a buffer layer formed of an organic film provided between a pair of adjacent barrier layers among the plurality of barrier layers, wherein the buffer layer is the organic EL element of the organic EL element. The peripheral portion in the non-display area has a thin thin film portion thinner than the film thickness on the organic EL element.
本発明によれば、バッファ層が、有機ＥＬ素子の非表示領域にある周辺部において有機ＥＬ素子上の膜厚よりも薄く平坦な薄膜部を有しているので、封止膜の周端部における封止性能の低下を抑制することができる。
According to the present invention, since the buffer layer has a thin thin film portion thinner than the film thickness on the organic EL element in the peripheral portion in the non-display area of the organic EL element, the peripheral end portion of the sealing film Decrease in sealing performance can be suppressed.
以下、本発明の実施形態を図面に基づいて詳細に説明する。なお、本発明は、以下の各実施形態に限定されるものではない。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments.
《第１の実施形態》
図１～図６は、本発明に係る表示装置の第１の実施形態を示している。ここで、図１は、本実施形態に係る有機ＥＬ表示装置５０ａの概略構成を示す平面図である。また、図２は、図１中のII－II線に沿った有機ＥＬ表示装置５０ａの概略構成を示す断面図である。また、図３は、有機ＥＬ表示装置５０ａの内部構成を示す断面図である。また、図４は、有機ＥＬ表示装置５０ａを構成する有機ＥＬ層１６を示す断面図である。 << First Embodiment >>
1 to 6 show a first embodiment of a display device according to the present invention. Here, FIG. 1 is a plan view showing a schematic configuration of the organicEL display device 50a according to the present embodiment. FIG. 2 is a cross-sectional view showing a schematic configuration of the organic EL display device 50a along the line II-II in FIG. FIG. 3 is a cross-sectional view showing the internal configuration of the organic EL display device 50a. FIG. 4 is a cross-sectional view showing the organic EL layer 16 constituting the organic EL display device 50a.
図１～図６は、本発明に係る表示装置の第１の実施形態を示している。ここで、図１は、本実施形態に係る有機ＥＬ表示装置５０ａの概略構成を示す平面図である。また、図２は、図１中のII－II線に沿った有機ＥＬ表示装置５０ａの概略構成を示す断面図である。また、図３は、有機ＥＬ表示装置５０ａの内部構成を示す断面図である。また、図４は、有機ＥＬ表示装置５０ａを構成する有機ＥＬ層１６を示す断面図である。 << First Embodiment >>
1 to 6 show a first embodiment of a display device according to the present invention. Here, FIG. 1 is a plan view showing a schematic configuration of the organic
有機ＥＬ表示装置５０ａは、図１及び図２に示すように、ベース基板として設けられた透明な樹脂基板１０と、樹脂基板１０（上に間接的）に設けられた有機ＥＬ素子１８と、有機ＥＬ素子１８を覆うように設けられた封止膜２５ａとを備えている。ここで、有機ＥＬ表示装置５０ａでは、図１に示すように、有機ＥＬ素子１８が平面視で矩形状に設けられることにより、画像表示を行う表示領域Ｄが矩形状に規定され、その表示領域Ｄには、複数の画素がマトリクス状に配列されている。そして、各画素では、例えば、赤色の階調表示を行うためのサブ画素、緑色の階調表示を行うためのサブ画素、及び青色の階調表示を行うためのサブ画素が互いに隣り合うように配列されている。また、有機ＥＬ表示装置５０ａでは、図１に示すように、表示領域Ｄの周囲に非表示領域Ｎが枠状に規定されている。また、有機ＥＬ表示装置５０ａでは、図３に示すように、樹脂基板１０と有機ＥＬ素子１８との間に、樹脂基板１０側から順にベースコート膜１１、複数のＴＦＴ１２及び層間絶縁膜１３が設けられている。
As shown in FIGS. 1 and 2, the organic EL display device 50a includes a transparent resin substrate 10 provided as a base substrate, an organic EL element 18 provided on the resin substrate 10 (indirectly above), And a sealing film 25 a provided to cover the EL element 18. Here, in the organic EL display device 50a, as shown in FIG. 1, the organic EL element 18 is provided in a rectangular shape in plan view, whereby the display area D for performing image display is defined in a rectangular shape. In D, a plurality of pixels are arranged in a matrix. In each pixel, for example, a sub-pixel for performing red gradation display, a sub-pixel for performing green gradation display, and a sub-pixel for performing blue gradation display are adjacent to each other. It is arranged. In the organic EL display device 50a, as shown in FIG. 1, a non-display area N is defined in a frame shape around the display area D. In the organic EL display device 50a, as shown in FIG. 3, a base coat film 11, a plurality of TFTs 12, and an interlayer insulating film 13 are provided in this order from the resin substrate 10 side between the resin substrate 10 and the organic EL element 18. ing.
樹脂基板１０は、例えば、ポリイミド樹脂製等のプラスチック基板である。なお、本実施形態では、ベース基板として、可撓性及び絶縁性を有する透明な樹脂基板を例示したが、ベース基板は、絶縁性を有する透明なガラス基板、導電性を有する不透明な金属薄板等であってもよい。
The resin substrate 10 is a plastic substrate made of polyimide resin, for example. In this embodiment, a transparent resin substrate having flexibility and insulation is illustrated as the base substrate. However, the base substrate is a transparent glass substrate having insulation, an opaque metal thin plate having conductivity, and the like. It may be.
ベースコート膜１１は、図３に示すように、樹脂基板１０上に設けられている。ここで、ベースコート膜１１は、例えば、酸化シリコン膜や窒化シリコン膜等の無機絶縁膜である。
The base coat film 11 is provided on the resin substrate 10 as shown in FIG. Here, the base coat film 11 is, for example, an inorganic insulating film such as a silicon oxide film or a silicon nitride film.
ＴＦＴ１２は、図３に示すように、ベースコート膜１１上に各サブ画素毎に設けられたスイッチング素子である。ここで、ＴＦＴ１２は、例えば、ベースコート膜１１上に設けられたゲート電極と、ゲート電極を覆うように設けられたゲート絶縁膜と、ゲート絶縁膜上にゲート電極と重なるように設けられた半導体層と、半導体層上に互いに対峙するように設けられたソース電極及びドレイン電極とを備えている。なお、本実施形態では、ボトムゲート型のＴＦＴ１２を例示したが、ＴＦＴ１２は、トップゲート型のＴＦＴであってもよい。
The TFT 12 is a switching element provided for each sub-pixel on the base coat film 11 as shown in FIG. Here, the TFT 12 includes, for example, a gate electrode provided on the base coat film 11, a gate insulating film provided so as to cover the gate electrode, and a semiconductor layer provided on the gate insulating film so as to overlap the gate electrode. And a source electrode and a drain electrode provided on the semiconductor layer so as to face each other. In the present embodiment, the bottom gate type TFT 12 is illustrated, but the TFT 12 may be a top gate type TFT.
層間絶縁膜１３は、図３に示すように、各ＴＦＴ１２のドレイン電極の一部以外を覆うように設けられている。ここで、層間絶縁膜１３は、例えば、アクリル樹脂等の透明な有機樹脂材料により構成されている。
As shown in FIG. 3, the interlayer insulating film 13 is provided so as to cover a portion other than a part of the drain electrode of each TFT 12. Here, the interlayer insulation film 13 is comprised by transparent organic resin materials, such as an acrylic resin, for example.
有機ＥＬ素子１８は、表示領域Ｄに設けられ、図３に示すように、層間絶縁膜１３上に順に設けられた複数の第１電極１４、エッジカバー１５、複数の有機ＥＬ層１６及び第２電極１７を備えている。
The organic EL element 18 is provided in the display region D, and as shown in FIG. 3, a plurality of first electrodes 14, an edge cover 15, a plurality of organic EL layers 16, and a second electrode provided in order on the interlayer insulating film 13. An electrode 17 is provided.
複数の第１電極１４は、図３示すように、複数のサブ画素に対応するように、層間絶縁膜１３上にマトリクス状に設けられている。ここで、第１電極１４は、図３に示すように、層間絶縁膜１３に形成されたコンタクトホールを介して、各ＴＦＴ１２のドレイン電極に接続されている。また、第１電極１４は、有機ＥＬ層１６にホール（正孔）を注入する機能を有している。また、第１電極１４は、有機ＥＬ層１６への正孔注入効率を向上させるために、仕事関数の大きな材料で形成するのがより好ましい。ここで、第１電極１４を構成する材料としては、例えば、銀（Ａｇ）、アルミニウム（Ａｌ）、バナジウム（Ｖ）、コバルト（Ｃｏ）、ニッケル（Ｎｉ）、タングステン（Ｗ）、金（Ａｕ）、カルシウム（Ｃａ）、チタン（Ｔｉ）、イットリウム（Ｙ）、ナトリウム（Ｎａ）、ルテニウム（Ｒｕ）、マンガン（Ｍｎ）、インジウム（Ｉｎ）、マグネシウム（Ｍｇ）、リチウム（Ｌｉ）、イッテルビウム（Ｙｂ）、フッ化リチウム（ＬｉＦ）等の金属材料が挙げられる。また、第１電極１４を構成する材料は、例えば、マグネシウム（Ｍｇ）／銅（Ｃｕ）、マグネシウム（Ｍｇ）／銀（Ａｇ）、ナトリウム（Ｎａ）／カリウム（Ｋ）、アスタチン（Ａｔ）／酸化アスタチン（ＡｔＯ２）、リチウム（Ｌｉ）／アルミニウム（Ａｌ）、リチウム（Ｌｉ）／カルシウム（Ｃａ）／アルミニウム（Ａｌ）、又はフッ化リチウム（ＬｉＦ）／カルシウム（Ｃａ）／アルミニウム（Ａｌ）等の合金であっても構わない。さらに、第１電極１４を構成する材料は、例えば、酸化スズ（ＳｎＯ）、酸化亜鉛（ＺｎＯ）、インジウムスズ酸化物（ＩＴＯ）、インジウム亜鉛酸化物（ＩＺＯ）のような導電性酸化物等であってもよい。また、第１電極１４は、上記材料からなる層を複数積層して形成されていてもよい。なお、仕事関数の大きな材料としては、例えば、インジウムスズ酸化物（ＩＴＯ）やインジウム亜鉛酸化物（ＩＺＯ）等が挙げられる。
As shown in FIG. 3, the plurality of first electrodes 14 are provided in a matrix on the interlayer insulating film 13 so as to correspond to the plurality of subpixels. Here, as shown in FIG. 3, the first electrode 14 is connected to the drain electrode of each TFT 12 through a contact hole formed in the interlayer insulating film 13. The first electrode 14 has a function of injecting holes into the organic EL layer 16. The first electrode 14 is more preferably formed of a material having a large work function in order to improve the efficiency of hole injection into the organic EL layer 16. Here, as a material constituting the first electrode 14, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF). The material constituting the first electrode 14 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation. Astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. An alloy may be used. Further, the material constituting the first electrode 14 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. There may be. The first electrode 14 may be formed by laminating a plurality of layers made of the above materials. Examples of the material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).
エッジカバー１５は、図３に示すように、各第１電極１４の周縁部を覆うように格子状に設けられている。ここで、エッジカバー１５を構成する材料としては、例えば、酸化シリコン（ＳｉＯ２）、四窒化三ケイ素（Ｓｉ３Ｎ４）のような窒化シリコン（ＳｉＮｘ（ｘは正数））、シリコンオキシナイトライド（ＳｉＮＯ）等の無機膜、又はポリイミド樹脂、アクリル樹脂、ポリシロキサン樹脂、ノボラック樹脂等の有機膜が挙げられる。
As shown in FIG. 3, the edge cover 15 is provided in a lattice shape so as to cover the peripheral edge portion of each first electrode 14. Here, examples of the material constituting the edge cover 15 include silicon nitride (SiO 2 ), silicon nitride such as trisilicon tetranitride (Si 3 N 4 ) (SiNx (x is a positive number)), silicon oxynite. An inorganic film such as a ride (SiNO) or an organic film such as a polyimide resin, an acrylic resin, a polysiloxane resin, or a novolac resin can be used.
複数の有機ＥＬ層１６は、図３に示すように、各第１電極１４上に配置され、複数のサブ画素に対応するように、マトリクス状に設けられている。ここで、有機ＥＬ層１６は、図４に示すように、第１電極１４上に順に設けられた正孔注入層１、正孔輸送層２、発光層３、電子輸送層４及び電子注入層５を備えている。
As shown in FIG. 3, the plurality of organic EL layers 16 are arranged on each first electrode 14 and are provided in a matrix so as to correspond to the plurality of sub-pixels. Here, as shown in FIG. 4, the organic EL layer 16 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer provided in this order on the first electrode 14. 5 is provided.
正孔注入層１は、陽極バッファ層とも呼ばれ、第１電極１４と有機ＥＬ層１６とのエネルギーレベルを近づけ、第１電極１４から有機ＥＬ層１６への正孔注入効率を改善する機能を有している。ここで、正孔注入層１を構成する材料としては、例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体、フェニレンジアミン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体等が挙げられる。
The hole injection layer 1 is also called an anode buffer layer, and has a function of improving the efficiency of hole injection from the first electrode 14 to the organic EL layer 16 by bringing the energy levels of the first electrode 14 and the organic EL layer 16 close to each other. Have. Here, as a material constituting the hole injection layer 1, for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, Examples include hydrazone derivatives and stilbene derivatives.
正孔輸送層２は、第１電極１４から有機ＥＬ層１６への正孔の輸送効率を向上させる機能を有している。ここで、正孔輸送層２を構成する材料としては、例えば、ポルフィリン誘導体、芳香族第三級アミン化合物、スチリルアミン誘導体、ポリビニルカルバゾール、ポリ－ｐ－フェニレンビニレン、ポリシラン、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミン置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、水素化アモルファスシリコン、水素化アモルファス炭化シリコン、硫化亜鉛、セレン化亜鉛等が挙げられる。
The hole transport layer 2 has a function of improving the hole transport efficiency from the first electrode 14 to the organic EL layer 16. Here, examples of the material constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, triazole derivatives, oxadiazole. Derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, Examples include hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
発光層３は、第１電極１４及び第２電極１７による電圧印加の際に、第１電極１４及び第２電極１７から正孔及び電子がそれぞれ注入されると共に、正孔及び電子が再結合する領域である。ここで、発光層３は、発光効率が高い材料により形成されている。そして、発光層３を構成する材料としては、例えば、金属オキシノイド化合物［８－ヒドロキシキノリン金属錯体］、ナフタレン誘導体、アントラセン誘導体、ジフェニルエチレン誘導体、ビニルアセトン誘導体、トリフェニルアミン誘導体、ブタジエン誘導体、クマリン誘導体、ベンズオキサゾール誘導体、オキサジアゾール誘導体、オキサゾール誘導体、ベンズイミダゾール誘導体、チアジアゾール誘導体、ベンズチアゾール誘導体、スチリル誘導体、スチリルアミン誘導体、ビススチリルベンゼン誘導体、トリススチリルベンゼン誘導体、ペリレン誘導体、ペリノン誘導体、アミノピレン誘導体、ピリジン誘導体、ローダミン誘導体、アクイジン誘導体、フェノキサゾン、キナクリドン誘導体、ルブレン、ポリ－ｐ－フェニレンビニレン、ポリシラン等が挙げられる。
In the light emitting layer 3, when voltage is applied by the first electrode 14 and the second electrode 17, holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and the holes and electrons are recombined. It is an area. Here, the light emitting layer 3 is formed of a material having high light emission efficiency. Examples of the material constituting the light emitting layer 3 include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, and coumarin derivatives. Benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzthiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, tristyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, Pyridine derivatives, rhodamine derivatives, acuidine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinyle , Polysilane, and the like.
電子輸送層４は、電子を発光層３まで効率良く移動させる機能を有している。ここで、電子輸送層４を構成する材料としては、例えば、有機化合物として、オキサジアゾール誘導体、トリアゾール誘導体、ベンゾキノン誘導体、ナフトキノン誘導体、アントラキノン誘導体、テトラシアノアントラキノジメタン誘導体、ジフェノキノン誘導体、フルオレノン誘導体、シロール誘導体、金属オキシノイド化合物等が挙げられる。
The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3. Here, examples of the material constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, and fluorenone derivatives. , Silole derivatives, metal oxinoid compounds and the like.
電子注入層５は、第２電極１７と有機ＥＬ層１６とのエネルギーレベルを近づけ、第２電極１７から有機ＥＬ層１６へ電子が注入される効率を向上させる機能を有し、この機能により、有機ＥＬ素子１８の駆動電圧を下げることができる。なお、電子注入層５は、陰極バッファ層とも呼ばれる。ここで、電子注入層５を構成する材料としては、例えば、フッ化リチウム（ＬｉＦ）、フッ化マグネシウム（ＭｇＦ２）、フッ化カルシウム（ＣａＦ２）、フッ化ストロンチウム（ＳｒＦ２）、フッ化バリウム（ＢａＦ２）のような無機アルカリ化合物、酸化アルミニウム（Ａｌ２Ｏ３）、酸化ストロンチウム（ＳｒＯ）等が挙げられる。
The electron injection layer 5 has a function of bringing the energy levels of the second electrode 17 and the organic EL layer 16 closer to each other, and improving the efficiency with which electrons are injected from the second electrode 17 into the organic EL layer 16. The drive voltage of the organic EL element 18 can be lowered. The electron injection layer 5 is also called a cathode buffer layer. Here, as a material constituting the electron injection layer 5, for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride. Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO), and the like can be given.
第２電極１７は、図３に示すように、各有機ＥＬ層１６及びエッジカバー１５を覆うように設けられている。また、第２電極１７は、有機ＥＬ層１６に電子を注入する機能を有している。また、第２電極１７は、有機ＥＬ層１６への電子注入効率を向上させるために、仕事関数の小さな材料で構成するのがより好ましい。ここで、第２電極１７を構成する材料としては、例えば、銀（Ａｇ）、アルミニウム（Ａｌ）、バナジウム（Ｖ）、コバルト（Ｃｏ）、ニッケル（Ｎｉ）、タングステン（Ｗ）、金（Ａｕ）、カルシウム（Ｃａ）、チタン（Ｔｉ）、イットリウム（Ｙ）、ナトリウム（Ｎａ）、ルテニウム（Ｒｕ）、マンガン（Ｍｎ）、インジウム（Ｉｎ）、マグネシウム（Ｍｇ）、リチウム（Ｌｉ）、イッテルビウム（Ｙｂ）、フッ化リチウム（ＬｉＦ）等が挙げられる。また、第２電極１７は、例えば、マグネシウム（Ｍｇ）／銅（Ｃｕ）、マグネシウム（Ｍｇ）／銀（Ａｇ）、ナトリウム（Ｎａ）／カリウム（Ｋ）、アスタチン（Ａｔ）／酸化アスタチン（ＡｔＯ２）、リチウム（Ｌｉ）／アルミニウム（Ａｌ）、リチウム（Ｌｉ）／カルシウム（Ｃａ）／アルミニウム（Ａｌ）、フッ化リチウム（ＬｉＦ）／カルシウム（Ｃａ）／アルミニウム（Ａｌ）等の合金により形成されていてもよい。また、第２電極１７は、例えば、酸化スズ（ＳｎＯ）、酸化亜鉛（ＺｎＯ）、インジウムスズ酸化物（ＩＴＯ）、インジウム亜鉛酸化物（ＩＺＯ）等の導電性酸化物により形成されていてもよい。また、第２電極１７は、上記材料からなる層を複数積層して形成されていてもよい。なお、仕事関数が小さい材料としては、例えば、マグネシウム（Ｍｇ）、リチウム（Ｌｉ）、フッ化リチウム（ＬｉＦ）、マグネシウム（Ｍｇ）／銅（Ｃｕ）、マグネシウム（Ｍｇ）／銀（Ａｇ）、ナトリウム（Ｎａ）／カリウム（Ｋ）、リチウム（Ｌｉ）／アルミニウム（Ａｌ）、リチウム（Ｌｉ）／カルシウム（Ｃａ）／アルミニウム（Ａｌ）、フッ化リチウム（ＬｉＦ）／カルシウム（Ｃａ）／アルミニウム（Ａｌ）等が挙げられる。
As shown in FIG. 3, the second electrode 17 is provided so as to cover each organic EL layer 16 and the edge cover 15. The second electrode 17 has a function of injecting electrons into the organic EL layer 16. The second electrode 17 is more preferably composed of a material having a small work function in order to improve the efficiency of electron injection into the organic EL layer 16. Here, as a material constituting the second electrode 17, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF). In addition, the second electrode 17 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidized astatine (AtO 2). ), Lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. May be. The second electrode 17 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. . The second electrode 17 may be formed by stacking a plurality of layers made of the above materials. Examples of materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium. (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) Etc.
封止膜２５ａは、有機ＥＬ素子１８を覆うように表示領域Ｄ及び非表示領域Ｎに設けられ、有機ＥＬ素子１８を水分や酸素から保護する機能を有している。また、封止膜２５ａは、図２に示すように、有機ＥＬ素子１８側から順に設けられた第１バリア層１９ａ、第１バッファ層２０ａ、第２バリア層２１ａ、第２バッファ層２２ａ及び第３バリア層２３ａを備えている。
The sealing film 25a is provided in the display area D and the non-display area N so as to cover the organic EL element 18, and has a function of protecting the organic EL element 18 from moisture and oxygen. As shown in FIG. 2, the sealing film 25a includes a first barrier layer 19a, a first buffer layer 20a, a second barrier layer 21a, a second buffer layer 22a, and a second buffer layer provided in this order from the organic EL element 18 side. 3 barrier layers 23a are provided.
第１バリア層１９ａ、第２バリア層２１ａ及び第３バリア層２３ａは、例えば、酸化シリコン（ＳｉＯ２）、酸化アルミニウム（Ａｌ２Ｏ３）、四窒化三ケイ素（Ｓｉ３Ｎ４）のような窒化シリコン（ＳｉＮｘ（ｘは正数））、炭窒化ケイ素（ＳｉＣＮ）等の無機膜により形成されている。
The first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a are, for example, silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and trisilicon tetranitride (Si 3 N 4 ). It is formed of an inorganic film such as silicon nitride (SiNx (x is a positive number)) or silicon carbonitride (SiCN).
第１バッファ層２０ａ及び第２バッファ層２２ａは、例えば、アクリレート、ポリ尿素、パリレン、ポリイミド、ポリアミド等の有機膜により形成されている。ここで、第１バッファ層２０ａは、図２に示すように、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔａ（例えば、２．５μｍ程度）よりも薄い膜厚Ｔｂ（例えば、０．５μｍ～１．５μｍ程度）の平坦な薄膜部２０ｔを有している。また、第２バッファ層２２ａは、図２に示すように、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔｃ（例えば、２．５μｍ程度）よりも薄い膜厚Ｔｄ（例えば、０．５μｍ～１．５μｍ程度）の平坦な薄膜部２２ｔを有している。また、第１バッファ層２０ａ及び第２バッファ層２２ａの断面形状は、図２に示すように、有機ＥＬ素子１８の周辺部において、外側に向けて低くなる階段状に形成されている。また、第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔは、有機ＥＬ素子１８の全周にわたって設けられている。また、第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔは、図２に示すように、平面視で（基板厚さ方向からみて）互いに重なるように設けられている。なお、第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔの幅は、例えば、０．１ｍｍ～３ｍｍ程度である。
The first buffer layer 20a and the second buffer layer 22a are formed of an organic film such as acrylate, polyurea, parylene, polyimide, polyamide or the like. Here, as shown in FIG. 2, the first buffer layer 20 a has a thickness Ta (for example, about 2.5 μm) on the organic EL element 18 in the peripheral portion in the non-display region N of the organic EL element 18. Has a flat thin film portion 20t having a thin film thickness Tb (for example, about 0.5 μm to 1.5 μm). Further, as shown in FIG. 2, the second buffer layer 22 a has a thickness Tc (for example, about 2.5 μm) on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18. A flat thin film portion 22t having a thin film thickness Td (for example, about 0.5 μm to 1.5 μm) is provided. Further, as shown in FIG. 2, the cross-sectional shapes of the first buffer layer 20 a and the second buffer layer 22 a are formed in a stepped shape that decreases toward the outside in the peripheral portion of the organic EL element 18. The thin film portion 20 t of the first buffer layer 20 a and the thin film portion 22 t of the second buffer layer 22 a are provided over the entire circumference of the organic EL element 18. Further, as shown in FIG. 2, the thin film portion 20t of the first buffer layer 20a and the thin film portion 22t of the second buffer layer 22a are provided so as to overlap each other in plan view (as viewed from the substrate thickness direction). The width of the thin film portion 20t of the first buffer layer 20a and the thin film portion 22t of the second buffer layer 22a is, for example, about 0.1 mm to 3 mm.
上記構成の有機ＥＬ表示装置５０ａは、可撓性を有し、各サブ画素において、ＴＦＴ１２を介して有機ＥＬ層１６の発光層３を適宜発光させることにより、画像表示を行うことができる。
The organic EL display device 50a having the above configuration has flexibility, and can display an image by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel.
本実施形態の有機ＥＬ表示装置５０ａを製造する際には、まず、例えば、ポリイミド樹脂製の樹脂基板１０の表面に、周知の方法を用いて、ベースコート膜１１、ＴＦＴ１２、層間絶縁膜１３、有機ＥＬ素子１８（第１電極１４、エッジカバー１５、有機ＥＬ層１６（正孔注入層１、正孔輸送層２、発光層３、電子輸送層４、電子注入層５）、第２電極１７）を形成する。その後、有機ＥＬ素子１８を覆うように、無機膜及び有機膜をＣＶＤ（Chemical Vapor Deposition）法や蒸着法等により成膜して封止膜２５ａを形成する。ここで、封止膜２５ａを構成する第１バッファ層２０ａ及び第２バッファ層２２ａを形成する際には、例えば、成膜マスクを用いて有機ＥＬ素子１８の非表示領域Ｎにある周辺部での成膜量を減らしたり、一旦均等な膜厚に成膜した後に、ドライエッチングで有機ＥＬ素子１８の非表示領域Ｎにある周辺部を薄肉化したりして、薄膜部２０ｔ及び２２ｔを形成する。
When manufacturing the organic EL display device 50a of the present embodiment, first, for example, the base coat film 11, the TFT 12, the interlayer insulating film 13, the organic film is formed on the surface of the resin substrate 10 made of polyimide resin using a known method. EL element 18 (first electrode 14, edge cover 15, organic EL layer 16 (hole injection layer 1, hole transport layer 2, light emitting layer 3, electron transport layer 4, electron injection layer 5), second electrode 17) Form. Thereafter, an inorganic film and an organic film are formed by a CVD (Chemical Vapor Deposition) method, a vapor deposition method, or the like so as to cover the organic EL element 18 to form a sealing film 25a. Here, when the first buffer layer 20a and the second buffer layer 22a constituting the sealing film 25a are formed, for example, in the peripheral portion in the non-display region N of the organic EL element 18 using a film formation mask. The thin film portions 20t and 22t are formed by reducing the film formation amount, or once forming a uniform film thickness, and then thinning the peripheral portion in the non-display region N of the organic EL element 18 by dry etching. .
次に、具体的に行った実験について説明する。ここで、図５は、有機ＥＬ表示装置５０ａのモデル実験を示す断面図である。また、図６は、有機ＥＬ表示装置５０ａのモデル実験で得られたバッファ層膜厚Ｔと水分浸透距離Ｌとの関係を示すグラフである。
Next, a specific experiment will be described. Here, FIG. 5 is a cross-sectional view showing a model experiment of the organic EL display device 50a. FIG. 6 is a graph showing the relationship between the buffer layer thickness T and the moisture permeation distance L obtained in the model experiment of the organic EL display device 50a.
まず、図５に示すように、厚さ０．７ｍｍのガラス基板６上に、ＣＶＤ法により、厚さ０．５μｍのＳｉＮｘ膜、厚さ０．５μｍ、１．５μｍ又は２．５μｍのＳｉＣＮ膜、及び厚さ０．５μｍのＳｉＮｘ膜を順に成膜して、第１バリア層７、バッファ層８及び第２バリア層９からなり、バッファ層８の膜厚が異なる３種類の試験体を作製する。
First, as shown in FIG. 5, a 0.5 μm thick SiNx film, a 0.5 μm thick, 1.5 μm or 2.5 μm thick SiCN film is formed on a 0.7 mm thick glass substrate 6 by CVD. And a SiNx film having a thickness of 0.5 μm are sequentially formed, and three types of test specimens including the first barrier layer 7, the buffer layer 8, and the second barrier layer 9 and having different buffer layer 8 thicknesses are produced. To do.
さらに、温度８０℃及び相対湿度８５％に設定された恒温恒湿槽内に３種類の各試験体を３３６時間静置した後に、各試験体のガラス基板６の端部をマイクロスコープで観察して、図５に示すように、バッファ層８の水分Ｍの吸収により変色した領域（図中ドット部）のガラス基板６の端面からの長さを３箇所で測定し、その平均により水分浸透距離Ｌを算出した。
Furthermore, after leaving each of the three types of specimens for 336 hours in a constant temperature and humidity chamber set at a temperature of 80 ° C. and a relative humidity of 85%, the end of the glass substrate 6 of each specimen is observed with a microscope. Then, as shown in FIG. 5, the length from the end surface of the glass substrate 6 of the region (dot portion in the figure) discolored by the absorption of the moisture M of the buffer layer 8 is measured at three locations, and the average moisture penetration distance is measured. L was calculated.
実験結果としては、図６に示すように、水分浸透距離Ｌがバッファ層８の膜厚Ｔに対して対数関数的に増加し、バッファ層８の膜厚Ｔが１．５μｍ程度以下になると、水分浸透距離Ｌが急激に短くなることが確認された。これにより、第１バリア層７、バッファ層８及び第２バリア層９の３層積層体では、水分Ｍの浸透速度がバッファ層８の膜厚に依存することが推察された。
As an experimental result, as shown in FIG. 6, when the moisture permeation distance L increases logarithmically with respect to the film thickness T of the buffer layer 8 and the film thickness T of the buffer layer 8 becomes about 1.5 μm or less, It was confirmed that the moisture permeation distance L was abruptly shortened. Thereby, it was guessed that in the three-layer laminate of the first barrier layer 7, the buffer layer 8 and the second barrier layer 9, the penetration rate of the moisture M depends on the film thickness of the buffer layer 8.
以上説明したように、本実施形態の有機ＥＬ表示装置５０ａによれば、以下の効果を得ることができる。
As described above, according to the organic EL display device 50a of the present embodiment, the following effects can be obtained.
（１）樹脂基板１０の表示領域Ｄに設けられた有機ＥＬ素子１８を覆う封止膜２５ａは、表示領域Ｄ及び非表示領域Ｎに設けられ、無機膜からなる第１バリア層１９ａ、第２バリア層２１ａ及び第３バリア層２３ａを備えている。そして、封止膜２５ａは、隣り合う第１バリア層１９ａ及び第２バリア層２１ａの間に有機膜からなる第１バッファ層２０ａを備えている。さらに、封止膜２５ａは、隣り合う第２バリア層２１ａ及び第３バリア層２３ａの間に有機膜からなる第２バッファ層２２ａを備えている。ここで、第１バッファ層２０ａは、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔａよりも薄い膜厚Ｔｂの平坦な薄膜部２０ｔを有している。また、第２バッファ層２２ａは、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔｃよりも薄い膜厚Ｔｄの平坦な薄膜部２２ｔを有している。そのため、有機ＥＬ素子１８の非表示領域Ｎにある周辺部においても、第１バリア層１９ａ、第２バリア層２１ａ及び第３バリア層２３ａの間に第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔが配置されている。これにより、第１バリア層１９ａ、第２バリア層２１ａ及び第３バリア層２３ａで発生する応力を第１バッファ層２０ａ及び第２バッファ層２２ａで緩和することができるので、封止膜２５ａの膜剥がれ等の発生を抑制することができる。また、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、第１バリア層１９ａ、第２バリア層２１ａ及び第３バリア層２３ａの表面に異物が存在しても、第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔが介在するので、その異物が第１バリア層１９ａ、第２バリア層２１ａ及び第３バリア層２３ａを突き破り難くなる。さらに、有機ＥＬ素子１８の非表示領域Ｎにある周辺部においては、第１バッファ層２０ａ及び第２バッファ層２２ａの膜厚Ｔｂ及びＴｄが有機ＥＬ素子１８上の膜厚Ｔａ及びＴｃよりも薄くなっているので、封止膜２５ａの周端部からの水分Ｍの浸透速度を抑制することができる。以上のようにして、封止膜２５ａの周端部での膜剥がれ等の発生を抑制し、封止膜２５ａの周端部での異物による突き破りを抑制し、封止膜２５ａの周端部からの水分Ｍの浸透速度を抑制することができるので、封止膜２５ａの周端部における封止性能の低下を抑制することができる。
(1) The sealing film 25a covering the organic EL element 18 provided in the display area D of the resin substrate 10 is provided in the display area D and the non-display area N, and includes a first barrier layer 19a and a second barrier film made of an inorganic film. A barrier layer 21a and a third barrier layer 23a are provided. The sealing film 25a includes a first buffer layer 20a made of an organic film between the adjacent first barrier layer 19a and second barrier layer 21a. Further, the sealing film 25a includes a second buffer layer 22a made of an organic film between the adjacent second barrier layer 21a and third barrier layer 23a. Here, the first buffer layer 20a has a flat thin film portion 20t having a film thickness Tb smaller than the film thickness Ta on the organic EL element 18 in the peripheral portion of the organic EL element 18 in the non-display region N. Yes. Further, the second buffer layer 22 a has a flat thin film portion 22 t having a thickness Td smaller than the thickness Tc on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18. . Therefore, also in the peripheral part in the non-display region N of the organic EL element 18, the thin film part 20t and the second buffer part 20t of the first buffer layer 20a are interposed between the first barrier layer 19a, the second barrier layer 21a and the third barrier layer 23a. A thin film portion 22t of the buffer layer 22a is disposed. Accordingly, the stress generated in the first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a can be relieved by the first buffer layer 20a and the second buffer layer 22a. Generation | occurrence | production of peeling etc. can be suppressed. Further, in the peripheral portion of the organic EL element 18 in the non-display region N, even if foreign matter is present on the surfaces of the first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a, the first buffer layer 20a Since the thin film portion 20t and the thin film portion 22t of the second buffer layer 22a are interposed, it is difficult for the foreign matter to penetrate the first barrier layer 19a, the second barrier layer 21a, and the third barrier layer 23a. Further, in the peripheral portion of the organic EL element 18 in the non-display region N, the film thicknesses Tb and Td of the first buffer layer 20a and the second buffer layer 22a are thinner than the film thicknesses Ta and Tc on the organic EL element 18. Therefore, the permeation | transmission rate of the water | moisture M from the peripheral edge part of the sealing film 25a can be suppressed. As described above, the occurrence of film peeling or the like at the peripheral end portion of the sealing film 25a is suppressed, the breakage due to foreign matters at the peripheral end portion of the sealing film 25a is suppressed, and the peripheral end portion of the sealing film 25a is suppressed. Since the permeation rate of moisture M from can be suppressed, it is possible to suppress a decrease in sealing performance at the peripheral end of the sealing film 25a.
（２）第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔは、有機ＥＬ素子１８の全周にわたって設けられているので、封止膜２５ａの周端部における封止性能の低下を全周にわたって抑制することができる。
(2) Since the thin film portion 20t of the first buffer layer 20a and the thin film portion 22t of the second buffer layer 22a are provided over the entire circumference of the organic EL element 18, the sealing performance at the peripheral edge of the sealing film 25a Can be suppressed over the entire circumference.
（３）第１バッファ層２０ａ及び第２バッファ層２２ａに薄膜部２０ｔ及び薄膜部２２ｔがそれぞれ設けられているので、第１バッファ層２０ａ及び第２バッファ層２２ａの一方だけに薄膜部が設けられている場合よりも、封止膜２５ａの周端部における封止性能の低下を抑制することができる。
(3) Since the thin film portion 20t and the thin film portion 22t are respectively provided in the first buffer layer 20a and the second buffer layer 22a, the thin film portion is provided only in one of the first buffer layer 20a and the second buffer layer 22a. Compared with the case where it is, the fall of the sealing performance in the peripheral edge part of the sealing film 25a can be suppressed.
（４）第１バッファ層２０ａの薄膜部２０ｔ及び第２バッファ層２２ａの薄膜部２２ｔは、互いに重なっているので、成膜マスクやエッチングマスクを共用化することにより、薄膜部２０ｔ及び薄膜部２２ｔを低コストで形成することができる。
(4) Since the thin film portion 20t of the first buffer layer 20a and the thin film portion 22t of the second buffer layer 22a overlap each other, the thin film portion 20t and the thin film portion 22t can be obtained by sharing a film formation mask or an etching mask. Can be formed at low cost.
（５）第１バッファ層２０ａ及び第２バッファ層２２ａの断面形状は、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、外側に向けて低くなる階段状になっているので、有機ＥＬ素子１８の非表示領域Ｎにある周辺部の幅を狭くすることができる。
(5) Since the cross-sectional shapes of the first buffer layer 20a and the second buffer layer 22a are stepped in the peripheral portion in the non-display region N of the organic EL element 18 and become lower toward the outside, the organic EL The width of the peripheral portion in the non-display area N of the element 18 can be reduced.
《第２の実施形態》
図７は、本実施形態に係る有機ＥＬ表示装置５０ｂの概略構成を示す断面図である。なお、以下の各実施形態において、図１～図６と同じ部分については同じ符号を付して、その詳細な説明を省略する。 << Second Embodiment >>
FIG. 7 is a cross-sectional view showing a schematic configuration of the organicEL display device 50b according to the present embodiment. In the following embodiments, the same portions as those in FIGS. 1 to 6 are denoted by the same reference numerals, and detailed description thereof is omitted.
図７は、本実施形態に係る有機ＥＬ表示装置５０ｂの概略構成を示す断面図である。なお、以下の各実施形態において、図１～図６と同じ部分については同じ符号を付して、その詳細な説明を省略する。 << Second Embodiment >>
FIG. 7 is a cross-sectional view showing a schematic configuration of the organic
上記第１の実施形態では、封止基板を備えない有機ＥＬ表示装置５０ａを例示したが、本実施形態では、封止基板４０を備えた有機ＥＬ表示装置５０ｂを例示する。
In the first embodiment, the organic EL display device 50a that does not include the sealing substrate is illustrated, but in this embodiment, the organic EL display device 50b that includes the sealing substrate 40 is illustrated.
有機ＥＬ表示装置５０ｂは、図７に示すように、互いに対向するように設けられた素子基板３０及び封止基板４０と、素子基板３０及び封止基板４０の間に枠状に設けられたシール材４５と、素子基板３０及び封止基板４０の間のシール材４５に囲まれた領域に設けられた封止樹脂層４６とを備えている。
As shown in FIG. 7, the organic EL display device 50 b includes an element substrate 30 and a sealing substrate 40 provided so as to face each other, and a seal provided in a frame shape between the element substrate 30 and the sealing substrate 40. And a sealing resin layer 46 provided in a region surrounded by the sealing material 45 between the element substrate 30 and the sealing substrate 40.
素子基板３０は、図７に示すように、上記第１の実施形態の有機ＥＬ表示装置５０ａと実質的に同じ構成になっている。なお、本実施形態では、上記第１の実施形態の有機ＥＬ表示装置５０ａと実質的に同じ構成の素子基板３０を例示したが、素子基板３０は、後述する第３の実施形態の有機ＥＬ表示装置５０ｃであってもよい。
As shown in FIG. 7, the element substrate 30 has substantially the same configuration as the organic EL display device 50 a of the first embodiment. In the present embodiment, the element substrate 30 having substantially the same configuration as that of the organic EL display device 50a of the first embodiment is exemplified, but the element substrate 30 is an organic EL display of a third embodiment described later. The device 50c may be used.
封止基板４０は、例えば、樹脂基板と、その樹脂基板上に設けられたベースコート膜とを備えている。ここで、封止基板４０の樹脂基板は、上記第１の実施形態の樹脂基板１０と実質的に同じ構成になっている。また、封止基板４０のベースコート膜は、上記第１の実施形態のベースコート膜１１と実質的に同じ構成になっている。
The sealing substrate 40 includes, for example, a resin substrate and a base coat film provided on the resin substrate. Here, the resin substrate of the sealing substrate 40 has substantially the same configuration as the resin substrate 10 of the first embodiment. Further, the base coat film of the sealing substrate 40 has substantially the same configuration as the base coat film 11 of the first embodiment.
シール材４５は、素子基板３０及び封止基板４０を基板周縁部で互いに接着するように設けられている。ここで、シール材４５を形成する材料としては、例えば、紫外線硬化性及び／又は熱硬化性を有するエポキシ樹脂、アクリル樹脂、ポリイミド樹脂、フェノール樹脂等が挙げられる。
The sealing material 45 is provided so that the element substrate 30 and the sealing substrate 40 are bonded to each other at the peripheral edge of the substrate. Here, as a material for forming the sealing material 45, for example, an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, or the like having ultraviolet curable properties and / or thermosetting properties may be used.
封止樹脂層４６は、水分や酸素等を吸着させるゲッター機能を有している。ここで、封止樹脂層４６を構成する材料としては、例えば、熱硬化性を有するエポキシ樹脂やシリコン樹脂等が挙げられる。また、封止樹脂層４６には、例えば、酸化カルシウム（ＣａＯ）、酸化バリウム（ＢａＯ）、酸化アルミニウム（Ａｌ２Ｏ３）のような金属酸化物、活性炭、シリカゲル、ゼオライト等が含有されている。
The sealing resin layer 46 has a getter function for adsorbing moisture, oxygen, and the like. Here, examples of the material constituting the sealing resin layer 46 include thermosetting epoxy resin and silicon resin. Further, the sealing resin layer 46 contains, for example, metal oxides such as calcium oxide (CaO), barium oxide (BaO), and aluminum oxide (Al 2 O 3 ), activated carbon, silica gel, zeolite, and the like. .
上記構成の有機ＥＬ表示装置５０ｂは、可撓性を有し、各サブ画素において、ＴＦＴ１２を介して有機ＥＬ層１６の発光層３を適宜発光させることにより、画像表示を行うことができる。
The organic EL display device 50b having the above configuration has flexibility, and can display an image by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel.
また、上記構成の有機ＥＬ表示装置５０ｂは、以下の工程により製造することができる。
Further, the organic EL display device 50b having the above-described configuration can be manufactured by the following steps.
まず、上記第１の実施形態の製造方法で製造された有機ＥＬ表示装置５０ａ、すなわち、素子基板３０の表面に、例えば、ディスペンサ方式により、シール樹脂を枠状に配置すると共に、シール樹脂の内側に充填樹脂を滴下して配置する。
First, the sealing resin is arranged in a frame shape on the surface of the organic EL display device 50a manufactured by the manufacturing method of the first embodiment, that is, the element substrate 30 by, for example, a dispenser method, and the inner side of the sealing resin. The filling resin is dropped on the substrate.
続いて、シール樹脂及び充填樹脂が配置された素子基板３０と封止基板４０とを減圧雰囲気で貼り合わせた後に、その減圧雰囲気を開放することにより、素子基板３０及び封止基板４０の外側の表面を加圧する。
Subsequently, the element substrate 30 on which the sealing resin and the filling resin are arranged and the sealing substrate 40 are bonded together in a reduced pressure atmosphere, and then the reduced pressure atmosphere is released, so that the outside of the element substrate 30 and the sealing substrate 40 is removed. Pressurize the surface.
さらに、例えば、素子基板３０及び封止基板４０に挟まれたシール樹脂に紫外線を照射した後に、被照射パネルを加熱することにより、シール樹脂及び充填樹脂を硬化させて、シール材４５及び封止樹脂層４６を形成する。
Further, for example, after irradiating the sealing resin sandwiched between the element substrate 30 and the sealing substrate 40 with ultraviolet rays, the panel to be irradiated is heated to cure the sealing resin and the filling resin, so that the sealing material 45 and the sealing material are sealed. A resin layer 46 is formed.
以上説明したように、本実施形態の有機ＥＬ表示装置５０ｂによれば、上述の（１）～（５）の他に以下の（６）の効果を得ることができる。
As described above, according to the organic EL display device 50b of the present embodiment, the following effect (6) can be obtained in addition to the above (1) to (5).
（６）素子基板３０に対向するように設けられた封止基板４０と、素子基板３０及び封止基板４０の間に設けられたシール材４５と、素子基板３０及び封止基板４０の間のシール材４５に囲まれた領域に設けられた封止樹脂層４６とを備えているので、有機ＥＬ素子１８の劣化が抑制され、有機ＥＬ表示装置５０ｂの信頼性を向上させることができる。
(6) The sealing substrate 40 provided to face the element substrate 30, the sealing material 45 provided between the element substrate 30 and the sealing substrate 40, and the gap between the element substrate 30 and the sealing substrate 40. Since the sealing resin layer 46 provided in the region surrounded by the sealing material 45 is provided, the deterioration of the organic EL element 18 can be suppressed and the reliability of the organic EL display device 50b can be improved.
《第３の実施形態》
図８は、本実施形態に係る有機ＥＬ表示装置５０ｃの概略構成を示す断面図である。 << Third Embodiment >>
FIG. 8 is a cross-sectional view illustrating a schematic configuration of the organicEL display device 50c according to the present embodiment.
図８は、本実施形態に係る有機ＥＬ表示装置５０ｃの概略構成を示す断面図である。 << Third Embodiment >>
FIG. 8 is a cross-sectional view illustrating a schematic configuration of the organic
上記第１及び第２の実施形態では、バッファ層の端部の断面形状が階段状に形成された有機ＥＬ表示装置５０ａ及び５０ｂを例示したが、本実施形態では、バッファ層の端部の断面形状が薄膜部で括れた形状に形成された有機ＥＬ表示装置５０ｃを例示する。
In the first and second embodiments, the organic EL display devices 50a and 50b in which the cross-sectional shape of the end portion of the buffer layer is formed in a staircase shape are illustrated. However, in this embodiment, the cross-section of the end portion of the buffer layer is illustrated. An organic EL display device 50c having a shape confined by a thin film portion is illustrated.
有機ＥＬ表示装置５０ｃは、図８に示すように、ベース基板として設けられた透明な樹脂基板１０と、樹脂基板１０（上に間接的）に設けられた有機ＥＬ素子１８と、有機ＥＬ素子１８を覆うように設けられた封止膜２５ｂとを備えている。
As shown in FIG. 8, the organic EL display device 50 c includes a transparent resin substrate 10 provided as a base substrate, an organic EL element 18 provided on the resin substrate 10 (indirectly above), and an organic EL element 18. And a sealing film 25b provided so as to cover the surface.
封止膜２５ｂは、有機ＥＬ素子１８を覆うように表示領域Ｄ及び非表示領域Ｎに設けられ、有機ＥＬ素子１８を水分や酸素から保護する機能を有している。また、封止膜２５ｂは、図８に示すように、有機ＥＬ素子１８側から順に設けられた第１バリア層１９ａ、第１バッファ層２０ｂ、第２バリア層２１ｂ、第２バッファ層２２ｂ及び第３バリア層２３ｂを備えている。
The sealing film 25b is provided in the display area D and the non-display area N so as to cover the organic EL element 18, and has a function of protecting the organic EL element 18 from moisture and oxygen. Further, as shown in FIG. 8, the sealing film 25b includes a first barrier layer 19a, a first buffer layer 20b, a second barrier layer 21b, a second buffer layer 22b, and a second buffer layer provided in this order from the organic EL element 18 side. 3 barrier layers 23b are provided.
第２バリア層２１ｂ及び第３バリア層２３ｂは、例えば、酸化シリコン（ＳｉＯ２）、酸化アルミニウム（Ａｌ２Ｏ３）、四窒化三ケイ素（Ｓｉ３Ｎ４）のような窒化シリコン（ＳｉＮｘ（ｘは正数））、炭窒化ケイ素（ＳｉＣＮ）等の無機膜により形成されている。
The second barrier layer 21b and the third barrier layer 23b are made of, for example, silicon nitride (SiNx (x)) such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and trisilicon tetranitride (Si 3 N 4 ). Is a positive number)), and is formed of an inorganic film such as silicon carbonitride (SiCN).
第１バッファ層２０ｂ及び第２バッファ層２２ｂは、例えば、アクリレート、ポリ尿素、パリレン、ポリイミド、ポリアミド等の有機膜により形成されている。ここで、第１バッファ層２０ｂは、図８に示すように、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔａ（例えば、２．５μｍ程度）よりも薄い膜厚Ｔｂ（例えば、０．５μｍ～１．５μｍ程度）の平坦な薄膜部２０ｔを有している。また、第２バッファ層２２ｂは、図８に示すように、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔｃ（例えば、２．５μｍ程度）よりも薄い膜厚Ｔｄ（例えば、０．５μｍ～１．５μｍ程度）の平坦な薄膜部２２ｔを有している。これにより、第１バッファ層２０ｂ及び第２バッファ層２２ｂの断面形状は、図８に示すように、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、薄膜部２０ｔ及び薄膜部２２ｔで括れた形状、すなわち、Ｕ字状やＶ字状等の凹溝状に形成されている。また、第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔは、有機ＥＬ素子１８の全周にわたって設けられている。また、第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔは、図８に示すように、平面視で（基板厚さ方向からみて）互いに重なるように設けられている。なお、第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔの幅は、例えば、０．１ｍｍ～３ｍｍ程度である。
The first buffer layer 20b and the second buffer layer 22b are formed of an organic film such as acrylate, polyurea, parylene, polyimide, polyamide or the like. Here, as shown in FIG. 8, the first buffer layer 20 b has a thickness Ta (for example, about 2.5 μm) on the organic EL element 18 in the peripheral portion in the non-display region N of the organic EL element 18. Has a flat thin film portion 20t having a thin film thickness Tb (for example, about 0.5 μm to 1.5 μm). Further, as shown in FIG. 8, the second buffer layer 22 b has a film thickness Tc (for example, about 2.5 μm) on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18. A flat thin film portion 22t having a thin film thickness Td (for example, about 0.5 μm to 1.5 μm) is provided. Thereby, the cross-sectional shapes of the first buffer layer 20b and the second buffer layer 22b are confined by the thin film portion 20t and the thin film portion 22t in the peripheral portion in the non-display region N of the organic EL element 18, as shown in FIG. In other words, it is formed in a concave groove shape such as a U shape or a V shape. The thin film portion 20 t of the first buffer layer 20 b and the thin film portion 22 t of the second buffer layer 22 b are provided over the entire circumference of the organic EL element 18. Further, as shown in FIG. 8, the thin film portion 20t of the first buffer layer 20b and the thin film portion 22t of the second buffer layer 22b are provided so as to overlap each other in plan view (as viewed from the substrate thickness direction). The width of the thin film portion 20t of the first buffer layer 20b and the thin film portion 22t of the second buffer layer 22b is, for example, about 0.1 mm to 3 mm.
上記構成の有機ＥＬ表示装置５０ｃは、可撓性を有し、各サブ画素において、ＴＦＴ１２を介して有機ＥＬ層１６の発光層３を適宜発光させることにより、画像表示を行うことができる。
The organic EL display device 50c having the above configuration is flexible, and can display an image by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 via the TFT 12 in each sub-pixel.
また、上記構成の有機ＥＬ表示装置５０ｃは、上記第１の実施形態で説明した有機ＥＬ表示装置５０ａの製造方法において、無機膜及び有機膜を成膜する際の膜厚の分布を変更することにより、製造することができる。
In addition, the organic EL display device 50c having the above-described configuration changes the distribution of film thickness when forming the inorganic film and the organic film in the method of manufacturing the organic EL display device 50a described in the first embodiment. Can be manufactured.
以上説明したように、本実施形態の有機ＥＬ表示装置５０ｃによれば、上述の（１）～（４）の他に以下の（７）の効果を得ることができる。
As described above, according to the organic EL display device 50c of the present embodiment, the following effect (7) can be obtained in addition to the above (1) to (4).
（１）について詳述すると、樹脂基板１０の表示領域Ｄに設けられた有機ＥＬ素子１８を覆う封止膜２５ｂは、表示領域Ｄ及び非表示領域Ｎに設けられ、無機膜からなる第１バリア層１９ａ、第２バリア層２１ｂ及び第３バリア層２３ｂを備えている。そして、封止膜２５ｂは、隣り合う第１バリア層１９ａ及び第２バリア層２１ｂの間に有機膜からなる第１バッファ層２０ｂを備えている。さらに、封止膜２５ｂは、隣り合う第２バリア層２１ｂ及び第３バリア層２３ｂの間に有機膜からなる第２バッファ層２２ｂを備えている。ここで、第１バッファ層２０ｂは、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔａよりも薄い膜厚Ｔｂの平坦な薄膜部２０ｔを有している。また、第２バッファ層２２ｂは、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、有機ＥＬ素子１８上の膜厚Ｔｃよりも薄い膜厚Ｔｄの平坦な薄膜部２２ｔを有している。そのため、有機ＥＬ素子１８の非表示領域Ｎにある周辺部においても、第１バリア層１９ａ、第２バリア層２１ｂ及び第３バリア層２３ｂの間に第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔが配置されている。これにより、第１バリア層１９ａ、第２バリア層２１ｂ及び第３バリア層２３ｂで発生する応力を第１バッファ層２０ｂ及び第２バッファ層２２ｂで緩和することができるので、封止膜２５ｂの膜剥がれ等の発生を抑制することができる。また、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、第１バリア層１９ａ、第２バリア層２１ｂ及び第３バリア層２３ｂの表面に異物が存在しても、第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔが介在するので、その異物が第１バリア層１９ａ、第２バリア層２１ｂ及び第３バリア層２３ｂを突き破り難くなる。さらに、有機ＥＬ素子１８の非表示領域Ｎにある周辺部においては、第１バッファ層２０ｂ及び第２バッファ層２２ｂの膜厚Ｔｂ及びＴｄが有機ＥＬ素子１８上の膜厚Ｔａ及びＴｃよりも薄くなっているので、封止膜２５ｂの周端部からの水分Ｍの浸透速度を抑制することができる。以上のようにして、封止膜２５ｂの周端部での膜剥がれ等の発生を抑制し、封止膜２５ｂの周端部での異物による突き破りを抑制し、封止膜２５ｂの周端部からの水分Ｍの浸透速度を抑制することができるので、封止膜２５ｂの周端部における封止性能の低下を抑制することができる。
More specifically, (1), the sealing film 25b covering the organic EL element 18 provided in the display region D of the resin substrate 10 is provided in the display region D and the non-display region N, and is a first barrier made of an inorganic film. A layer 19a, a second barrier layer 21b, and a third barrier layer 23b are provided. The sealing film 25b includes a first buffer layer 20b made of an organic film between the adjacent first barrier layer 19a and second barrier layer 21b. Further, the sealing film 25b includes a second buffer layer 22b made of an organic film between the adjacent second barrier layer 21b and the third barrier layer 23b. Here, the first buffer layer 20 b has a flat thin film portion 20 t having a thickness Tb thinner than the thickness Ta on the organic EL element 18 in the peripheral portion in the non-display region N of the organic EL element 18. Yes. Further, the second buffer layer 22b has a flat thin film portion 22t having a thickness Td smaller than the thickness Tc on the organic EL element 18 in the peripheral portion in the non-display area N of the organic EL element 18. . Therefore, even in the peripheral portion of the organic EL element 18 in the non-display region N, the thin film portion 20t and the second buffer layer 20b of the first buffer layer 20b are interposed between the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b. A thin film portion 22t of the buffer layer 22b is disposed. As a result, the stress generated in the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b can be relieved by the first buffer layer 20b and the second buffer layer 22b, so that the film of the sealing film 25b Generation | occurrence | production of peeling etc. can be suppressed. Further, in the peripheral portion of the organic EL element 18 in the non-display region N, even if foreign matter exists on the surfaces of the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b, the first buffer layer 20b Since the thin film portion 20t and the thin film portion 22t of the second buffer layer 22b are interposed, it is difficult for the foreign matter to penetrate the first barrier layer 19a, the second barrier layer 21b, and the third barrier layer 23b. Further, in the peripheral portion of the organic EL element 18 in the non-display region N, the film thicknesses Tb and Td of the first buffer layer 20b and the second buffer layer 22b are thinner than the film thicknesses Ta and Tc on the organic EL element 18. Therefore, the permeation speed of the moisture M from the peripheral end portion of the sealing film 25b can be suppressed. As described above, the occurrence of film peeling or the like at the peripheral end portion of the sealing film 25b is suppressed, the breakage due to foreign matters at the peripheral end portion of the sealing film 25b is suppressed, and the peripheral end portion of the sealing film 25b is suppressed. Since the permeation rate of moisture M from can be suppressed, it is possible to suppress a decrease in sealing performance at the peripheral end portion of the sealing film 25b.
（２）について詳述すると、第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔは、有機ＥＬ素子１８の全周にわたって設けられているので、封止膜２５ｂの周端部における封止性能の低下を全周にわたって抑制することができる。
When (2) is described in detail, since the thin film portion 20t of the first buffer layer 20b and the thin film portion 22t of the second buffer layer 22b are provided over the entire circumference of the organic EL element 18, the peripheral edge of the sealing film 25b The deterioration of the sealing performance in the part can be suppressed over the entire circumference.
（３）について詳述すると、第１バッファ層２０ｂ及び第２バッファ層２２ｂに薄膜部２０ｔ及び薄膜部２２ｔがそれぞれ設けられているので、第１バッファ層２０ｂ及び第２バッファ層２２ｂの一方だけに薄膜部が設けられている場合よりも、封止膜２５ｂの周端部における封止性能の低下を抑制することができる。
Describing in detail about (3), since the thin film portion 20t and the thin film portion 22t are respectively provided in the first buffer layer 20b and the second buffer layer 22b, only one of the first buffer layer 20b and the second buffer layer 22b is provided. The deterioration of the sealing performance at the peripheral end of the sealing film 25b can be suppressed as compared with the case where the thin film portion is provided.
（４）について詳述すると、第１バッファ層２０ｂの薄膜部２０ｔ及び第２バッファ層２２ｂの薄膜部２２ｔは、互いに重なっているので、成膜マスクやエッチングマスクを共用化することにより、薄膜部２０ｔ及び薄膜部２２ｔを低コストで形成することができる。
Specifically, since the thin film portion 20t of the first buffer layer 20b and the thin film portion 22t of the second buffer layer 22b overlap each other, the thin film portion can be obtained by sharing the film formation mask and the etching mask. 20t and the thin film part 22t can be formed at low cost.
（７）第１バッファ層２０ｂ及び第２バッファ層２２ｂの断面形状は、有機ＥＬ素子１８の非表示領域Ｎにある周辺部において、薄膜部２０ｔ及び薄膜部２２ｔで括れた形状になっているので、封止膜２５ｂの周端部からの水分Ｍの浸透速度を括れた薄膜部２０ｔ及び薄膜部２２ｔによって抑制することができる。
(7) The cross-sectional shapes of the first buffer layer 20b and the second buffer layer 22b are confined by the thin film portion 20t and the thin film portion 22t in the peripheral portion in the non-display region N of the organic EL element 18. The penetration rate of moisture M from the peripheral end of the sealing film 25b can be suppressed by the thin film portion 20t and the thin film portion 22t.
《その他の実施形態》
上記各実施形態では、第１バッファ層の薄膜部と第２バッファ層の薄膜部とが互いに重なった有機ＥＬ表示装置を例示したが、本発明は、第１バッファ層の薄膜部と第２バッファ層の薄膜部とが互いに重なっていない有機ＥＬ表示装置にも適用することができる。 << Other Embodiments >>
In each of the above embodiments, the organic EL display device in which the thin film portion of the first buffer layer and the thin film portion of the second buffer layer are overlapped with each other is illustrated, but the present invention is directed to the thin film portion of the first buffer layer and the second buffer layer. The present invention can also be applied to an organic EL display device in which the thin film portions of the layers do not overlap each other.
上記各実施形態では、第１バッファ層の薄膜部と第２バッファ層の薄膜部とが互いに重なった有機ＥＬ表示装置を例示したが、本発明は、第１バッファ層の薄膜部と第２バッファ層の薄膜部とが互いに重なっていない有機ＥＬ表示装置にも適用することができる。 << Other Embodiments >>
In each of the above embodiments, the organic EL display device in which the thin film portion of the first buffer layer and the thin film portion of the second buffer layer are overlapped with each other is illustrated, but the present invention is directed to the thin film portion of the first buffer layer and the second buffer layer. The present invention can also be applied to an organic EL display device in which the thin film portions of the layers do not overlap each other.
また、上記各実施形態では、第１バッファ層及び第２バッファ層に薄膜部がそれぞれ形成された有機ＥＬ表示装置を例示したが、本発明は、第１バッファ層及び第２バッファ層の一方に薄膜部が形成された有機ＥＬ表示装置にも適用することができる。
In each of the above embodiments, the organic EL display device in which the thin film portions are formed in the first buffer layer and the second buffer layer is exemplified. However, the present invention is applied to one of the first buffer layer and the second buffer layer. The present invention can also be applied to an organic EL display device in which a thin film portion is formed.
また、上記各実施形態では、第３バリア層／第２バッファ層／第２バリア層／第１バッファ層／第１バリア層の５層構造の封止膜を備えた有機ＥＬ表示装置を例示したが、本発明は、例えば、第２バリア層／バッファ層／第１バリア層の３層構造等のバッファ層がバリア層に挟持された構造を有する封止膜を備えた有機ＥＬ表示装置にも適用することができる。
In each of the above embodiments, an organic EL display device having a five-layer sealing film of the third barrier layer / second buffer layer / second barrier layer / first buffer layer / first barrier layer is illustrated. However, the present invention also relates to an organic EL display device including a sealing film having a structure in which a buffer layer such as a three-layer structure of second barrier layer / buffer layer / first barrier layer is sandwiched between barrier layers. Can be applied.
また、上記各実施形態では、正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層の５層積層構造の有機ＥＬ層を例示したが、有機ＥＬ層は、例えば、正孔注入層兼正孔輸送層、発光層、及び電子輸送層兼電子注入層の３層積層構造であってもよい。
In each of the above embodiments, an organic EL layer having a five-layer structure of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer has been exemplified. A three-layer structure of a hole injection layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer may be employed.
また、上記各実施形態では、第１電極を陽極とし、第２電極を陰極とした有機ＥＬ表示装置を例示したが、本発明は、有機ＥＬ層の積層構造を反転させ、第１電極を陰極とし、第２電極を陽極とした有機ＥＬ表示装置にも適用することができる。
In each of the above embodiments, the organic EL display device using the first electrode as an anode and the second electrode as a cathode has been exemplified. However, the present invention reverses the stacked structure of the organic EL layers and uses the first electrode as a cathode. The present invention can also be applied to an organic EL display device using the second electrode as an anode.
また、上記各実施形態では、第１電極に接続されたＴＦＴの電極をドレイン電極とした素子基板を備えた有機ＥＬ表示装置を例示したが、本発明は、第１電極に接続されたＴＦＴの電極をソース電極と呼ぶ素子基板を備えた有機ＥＬ表示装置にも適用することができる。
In each of the above embodiments, the organic EL display device including the element substrate using the TFT electrode connected to the first electrode as the drain electrode is illustrated. However, the present invention is not limited to the TFT connected to the first electrode. The present invention can also be applied to an organic EL display device including an element substrate whose electrode is called a source electrode.
以上説明したように、本発明は、有機ＥＬ表示装置について有用である。
As described above, the present invention is useful for an organic EL display device.
Ｄ 表示領域
Ｎ 非表示領域
１０ 樹脂基板（ベース基板）
１８ 有機ＥＬ素子
１９ａ 第１バリア層
２０ａ，２０ｂ 第１バッファ層
２０ｔ 薄膜部
２１ａ，２１ｂ 第２バリア層
２２ａ，２２ｂ 第２バッファ層
２２ｔ 薄膜部
２３ａ，２３ｂ 第３バリア層
２５ａ，２５ｂ 封止膜
３０ 素子基板
４０ 封止基板
４５ シール材
４６ 封止樹脂層
５０ａ～５０ｃ 有機ＥＬ表示装置 D Display areaN Non-display area 10 Resin substrate (base substrate)
18Organic EL element 19a First barrier layer 20a, 20b First buffer layer 20t Thin film part 21a, 21b Second barrier layer 22a, 22b Second buffer layer 22t Thin film part 23a, 23b Third barrier layer 25a, 25b Sealing film 30 Element substrate 40 Sealing substrate 45 Sealing material 46 Sealing resin layers 50a to 50c Organic EL display device
Ｎ 非表示領域
１０ 樹脂基板（ベース基板）
１８ 有機ＥＬ素子
１９ａ 第１バリア層
２０ａ，２０ｂ 第１バッファ層
２０ｔ 薄膜部
２１ａ，２１ｂ 第２バリア層
２２ａ，２２ｂ 第２バッファ層
２２ｔ 薄膜部
２３ａ，２３ｂ 第３バリア層
２５ａ，２５ｂ 封止膜
３０ 素子基板
４０ 封止基板
４５ シール材
４６ 封止樹脂層
５０ａ～５０ｃ 有機ＥＬ表示装置 D Display area
18
Claims (8)
- 画像表示を行う表示領域、及び該表示領域の周囲に非表示領域が規定されたベース基板と、
前記ベース基板の前記表示領域に設けられた有機ＥＬ素子と、
前記有機ＥＬ素子を覆うように前記表示領域及び前記非表示領域に設けられた封止膜とを備え、
前記封止膜が、無機膜からなる複数のバリア層と、該複数のバリア層のうち、隣り合う一対のバリア層の間に設けられた有機膜からなるバッファ層とを有する有機ＥＬ表示装置であって、
前記バッファ層は、前記有機ＥＬ素子の前記非表示領域にある周辺部において、該有機ＥＬ素子上の膜厚よりも薄く平坦な薄膜部を有していることを特徴とする有機ＥＬ表示装置。 A display area for displaying an image, and a base substrate in which a non-display area is defined around the display area;
An organic EL element provided in the display region of the base substrate;
A sealing film provided in the display area and the non-display area so as to cover the organic EL element,
In the organic EL display device, the sealing film includes a plurality of barrier layers made of an inorganic film, and a buffer layer made of an organic film provided between a pair of adjacent barrier layers among the plurality of barrier layers. There,
The organic EL display device, wherein the buffer layer has a flat thin film portion thinner than a film thickness on the organic EL element at a peripheral portion in the non-display area of the organic EL element. - 前記薄膜部は、前記有機ＥＬ素子の全周にわたって設けられていることを特徴とする請求項１に記載の有機ＥＬ表示装置。 2. The organic EL display device according to claim 1, wherein the thin film portion is provided over the entire circumference of the organic EL element.
- 前記複数のバリア層は、互いに異なる３つのバリア層からなり、
前記バッファ層は、互いに異なる２つのバッファ層からなり、
前記２つのバッファ層には、前記薄膜部がそれぞれ設けられていることを特徴とする請求項１又は２に記載の有機ＥＬ表示装置。 The plurality of barrier layers are composed of three different barrier layers,
The buffer layer is composed of two different buffer layers,
The organic EL display device according to claim 1, wherein the thin film portion is provided in each of the two buffer layers. - 前記２つのバッファ層の各薄膜部は、互いに重なっていることを特徴とする請求項３に記載の有機ＥＬ表示装置。 4. The organic EL display device according to claim 3, wherein the thin film portions of the two buffer layers overlap each other.
- 前記バッファ層の断面形状は、前記有機ＥＬ素子の前記非表示領域にある周辺部において、外側に向けて低くなる階段状になっていることを特徴とする請求項１～４の何れか１つに記載の有機ＥＬ表示装置。 5. The buffer layer according to claim 1, wherein a cross-sectional shape of the buffer layer is a stepped shape that decreases toward the outside in a peripheral portion in the non-display region of the organic EL element. The organic EL display device described in 1.
- 前記バッファ層の断面形状は、前記有機ＥＬ素子の前記非表示領域にある周辺部において、前記薄膜部で括れた形状になっていることを特徴とする請求項１～４の何れか１つに記載の有機ＥＬ表示装置。 5. The cross-sectional shape of the buffer layer is a shape confined by the thin film portion in a peripheral portion in the non-display region of the organic EL element. The organic EL display device described.
- 前記ベース基板の前記封止膜側に対向するように設けられた封止基板と、
前記ベース基板、前記有機ＥＬ素子及び前記封止膜を有する素子基板と前記封止基板との間に枠状に設けられ、該素子基板及び該封止基板を互いに接着するためのシール材とを備えていることを特徴とする請求項１～６の何れか１つに記載の有機ＥＬ表示装置。 A sealing substrate provided to face the sealing film side of the base substrate;
A sealing material for bonding the element substrate and the sealing substrate to each other, provided in a frame shape between the sealing substrate and the element substrate having the base substrate, the organic EL element and the sealing film; 7. The organic EL display device according to claim 1, further comprising an organic EL display device. - 前記素子基板及び前記封止基板の間の前記シール材に囲まれた領域には、封止樹脂層が設けられていることを特徴とする請求項７に記載の有機ＥＬ表示装置。 The organic EL display device according to claim 7, wherein a sealing resin layer is provided in a region surrounded by the sealing material between the element substrate and the sealing substrate.
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| US15/747,185 US20180219172A1 (en) | 2015-08-21 | 2016-08-18 | Organic el display device |
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| JP2015-164176 | 2015-08-21 | ||
| JP2015164176 | 2015-08-21 |
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| PCT/JP2016/003764 WO2017033440A1 (en) | 2015-08-21 | 2016-08-18 | Organic el display device |
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| WO (1) | WO2017033440A1 (en) |
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| US11302896B2 (en) * | 2019-12-17 | 2022-04-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and manufacturing method thereof, and display device |
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