WO2017024562A1 - 量子点玻璃盒及其制备方法和应用 - Google Patents

量子点玻璃盒及其制备方法和应用 Download PDF

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WO2017024562A1
WO2017024562A1 PCT/CN2015/086790 CN2015086790W WO2017024562A1 WO 2017024562 A1 WO2017024562 A1 WO 2017024562A1 CN 2015086790 W CN2015086790 W CN 2015086790W WO 2017024562 A1 WO2017024562 A1 WO 2017024562A1
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quantum dot
glass box
dot phosphor
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cdse
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樊勇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
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    • Y10S977/95—Electromagnetic energy

Definitions

  • the invention relates to the technical field of Quantum Dots (QD), in particular to a quantum dot glass box and a preparation method thereof, and to the application of the quantum dot glass box in an LED light source.
  • QD Quantum Dots
  • Liquid crystal displays have the advantages of thin body, low power consumption, no radiation, etc., and are widely used, such as mobile phones, digital cameras, computers, television screens, and the like.
  • Most of the liquid crystal displays on the existing market are backlight type liquid crystal displays, including a liquid crystal panel and a backlight module.
  • the liquid crystal panel and the backlight module are oppositely disposed, and the backlight module provides a display light source to the liquid crystal panel to enable the liquid crystal panel to display images.
  • the quality requirements of the display screen of the liquid crystal display are getting higher and higher.
  • the color saturation of the picture can be improved by improving the chromaticity of the light bar in the backlight module.
  • Some techniques use quantum dot technology to improve the color gamut in backlight modules.
  • Quantum Dots also known as nanocrystals, are composed of a finite number of atoms, all of which are on the order of nanometers.
  • Quantum dots are generally nanoparticles made of a semiconductor material (usually composed of Group II-VI or Group III-V elements) and having a stable diameter between 1 and 10 nm.
  • a quantum dot is an aggregate of atoms and molecules on the nanometer scale. It can be composed of a semiconductor material, such as elements of Group II, VI (such as CdS, CdSe, CdTe, ZnSe, etc.) or III, V elements (such as InP). , InAs, etc.) composition, can also be composed of two or more semiconductor materials.
  • Quantum dots are semiconductor nanostructures that bind conduction band electrons, valence band holes, and excitons in three spatial directions. Since the conduction band electrons and the valence band holes are quantum confined, the continuous band structure becomes a discrete energy level structure having molecular characteristics, and can emit fluorescence after being excited.
  • the application of quantum dots in the field of illumination and display is to change the wavelength of incident light, and it is possible to control wavelengths by using crystals of different sizes. As long as the crystal size can be precisely controlled, the color can be precisely controlled and a wide range of color development is possible.
  • Quantum dots have a small Width at Half Maximum (FWHM), usually only 20 to 50 nm, which is a very good backlight.
  • a liquid crystal display with a quantum dot phosphor backlight usually has a wider gamut coverage.
  • the liquid crystal display of YAG phosphor backlight is increased by about 50%, which makes the color of the liquid crystal display more beautiful, and makes the picture more three-dimensional.
  • the application of quantum dot phosphors in LED backlights is mainly after the LED chip package is completed, and the mixed colloid formed by preparing the quantum dot phosphor and the silica gel is coated or other processes on the light emitting surface of the LED chip.
  • a quantum dot phosphor film is formed thereon. Because the quantum dot phosphor is easily oxidized and the temperature quenching phenomenon of the quantum dot phosphor is serious, the luminous efficiency decreases seriously with the increase of temperature.
  • the quantum dot phosphor directly forms a thin film on the LED chip, lacks protection of the quantum dot phosphor, seriously shortens the service life of the quantum dot phosphor, and also reduces the luminescence of the quantum dot phosphor. Efficiency, light color uniformity also decreases.
  • the present invention provides a quantum dot glass box for forming an effective protection for a quantum dot phosphor material to solve the current application of the quantum dot phosphor in an LED chip, and the quantum dot phosphor has a short lifetime and emits light. Low efficiency and poor uniformity of light color.
  • a quantum dot glass box comprising a glass box and a quantum dot phosphor material, the glass box having an accommodating cavity, and the quantum dot phosphor material is solidified and packaged in the accommodating cavity.
  • the glass box has a wall thickness of 0.1 to 0.7 mm.
  • the quantum dot phosphor material comprises a colloidal material and a quantum dot phosphor mixed in the colloidal material.
  • the weight percentage of the quantum dot phosphor is 1% to 20%.
  • the quantum dot phosphor is CdSe/ZnSe, CdSe/ZnS, CdS/ZnS, CdS/HgS, CdSe/ZnS/CdS, CdSe/CdS/ZnS, InP/CdS, CuInS or graphene oxide quantum dots.
  • the colloidal material is UV glue or IR glue.
  • Another aspect of the present invention provides a method of preparing a quantum dot glass cell as described above, wherein the method comprises the steps of:
  • the curing process is an IR curing process, a UV curing process or a thermal curing process.
  • the invention also provides the use of a quantum dot glass cell as described above in an LED light source.
  • the quantum dot glass box provided by the embodiment of the invention solidifies and encapsulates the quantum dot phosphor material in the glass box, can be waterproof and moisture proof, prevents oxidation failure of the quantum dot phosphor, and effectively prolongs the service life of the quantum dot phosphor.
  • the quantum dot glass box is applied to an LED light source, and the problem that the quantum dot phosphor has a short life, low luminous efficiency, and poor uniformity of light color can be solved compared with the prior art.
  • FIG. 1 is a top cross-sectional view of a quantum dot glass cell provided by an embodiment of the present invention.
  • FIG. 2 is a side cross-sectional view of a quantum dot glass box provided by an embodiment of the present invention.
  • FIG. 3 is a schematic view showing the structure of a glass case before the quantum dot phosphor material is packaged.
  • FIG. 4 is a process flow diagram of a method for preparing a quantum dot glass box according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of an LED light source according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a fixing bracket in an LED light source according to an embodiment of the present invention.
  • the present embodiment provides a quantum dot glass box 10 comprising a glass box 11 and a quantum dot phosphor material 12.
  • the glass box 11 has an accommodation The cavity 111, the quantum dot phosphor material 12 is solidified and encapsulated in the accommodating cavity 111.
  • the glass case 12 has an injection port 112 that is fluidly connected to the accommodating cavity 111. Further, the wall thickness of the glass case 12 preferably ranges from 0.1 to 0.7 mm.
  • the quantum dot phosphor material 12 comprises a colloidal material and a quantum dot phosphor mixed in the colloidal material.
  • the weight percentage of the quantum dot phosphor may be selected to be 1% to 20%.
  • the quantum dot phosphor may be selected from CdSe/ZnSe, CdSe/ZnS, CdS/ZnS, CdS/HgS, CdSe/ZnS/CdS, CdSe/CdS/ZnS, InP/CdS, CuInS or graphene oxide quantum.
  • the colloidal material is UV glue (ultraviolet light curing glue) or IR glue (infrared light curing glue).
  • UV glue ultraviolet light curing glue
  • IR glue infrared light curing glue
  • the method includes the steps of:
  • S101 Prepare a glass box having a receiving cavity and an injection port. As shown in FIG. 3, the glass box 12 is provided with an accommodating cavity 111 and an injection port 112 fluidly connected to the accommodating cavity 111.
  • a fluid quantum dot phosphor material Preparing a fluid quantum dot phosphor material. Specifically, first, a quantum dot phosphor and a colloidal material of a predetermined ratio weight are separately obtained, and then the quantum dot phosphor powder and the colloidal material are mixed and stirred uniformly.
  • the curing process may be selected as an IR (Infrared Ray) curing process, a UV (Ultra-violet Ray) curing process, or a thermal curing process.
  • IR Infrared Ray
  • UV Ultra-violet Ray
  • the LED light source includes a fixing bracket 20.
  • the fixing bracket 20 is sequentially provided with a packaging slot 201 and a mounting slot 202 from the bottom to the top.
  • the mounting slot 202 has a width larger than the width of the packaging slot 201.
  • the LED chip 30 is encapsulated in the package slot 201 by the encapsulant 40, and the quantum dot glass box 10 is placed. In the installation slot 202.
  • the light emitted from the LED chip 30 passes through the encapsulant 40 and is incident on the quantum dot glass cell 10, thereby exciting the quantum dot phosphor material in the quantum dot glass cell 10 to emit fluorescence.
  • the quantum dot glass box provided by the above embodiments solidifies and encapsulates the quantum dot phosphor material in a glass box, can be waterproof and moisture proof, prevents oxidation failure of the quantum dot phosphor, and effectively prolongs the service life of the quantum dot phosphor.
  • the quantum dot glass box is applied to an LED light source, and the problem that the quantum dot phosphor has a short life, low luminous efficiency, and poor uniformity of light color can be solved compared with the prior art.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

一种量子点玻璃盒（10），其包括玻璃盒（11）以及量子点荧光粉材料（12），所述玻璃盒（11）具有容置腔体（111），所述量子点荧光粉材料（12）固化封装于所述容置腔体（111）中。该量子点玻璃盒（10）的制备方法包括步骤：S101、制备一具有容置腔体（111）的玻璃盒（11），所述玻璃盒（11）具有流体流通至所述容置腔体（111）的注入口（112）；S102、制备流体状的量子点荧光粉材料（12）；S103、将所述流体状的量子点荧光粉材料（12）通过所述注入口（112）注入到所述容置腔体（111）内；S104、应用固化工艺固化所述容置腔体（111）内的流体状的量子点荧光粉材料（12）；S105、热熔密封所述注入口（112），获得所述量子点玻璃盒（10），其可以应用在LED光源中。

Description

量子点玻璃盒及其制备方法和应用 技术领域
本发明涉及量子点(Quantum Dots，QD)技术领域，尤其是一种量子点玻璃盒及其制备方法，还涉及该量子点玻璃盒在LED光源中的应用。
背景技术
液晶显示器(LCD)具有机身薄、功耗低、无辐射等优点，得到了广泛的应用，例如移动电话、数字相机、计算机、电视机屏幕等等。现有市场上的液晶显示器大部分为背光型液晶显示器，包括液晶面板及背光模组，液晶面板与背光模组相对设置，背光模组提供显示光源给液晶面板，以使液晶面板显示影像。随着社会的发展，用户对液晶显示器显示画面的质量要求越来越高，为了提高画面的色彩饱和度，通过改善背光模组中灯条的色度，就可以提升画面的色彩饱和度，现有的技术是在背光模组中采用量子点技术来提高色域。
量子点(Quantum Dots，QD)又可以称为纳米晶体，是由有限数目的原子组成，三个维度尺寸均在纳米数量级。量子点一般是由半导体材料(通常由II～Ⅵ族或III～V族元素组成)制成的、稳定直径介于1～10nm之间的纳米粒子。量子点是在纳米尺度上的原子和分子的集合体，既可由一种半导体材料组成，如由II、VI族元素(如CdS、CdSe、CdTe、ZnSe等)或III、V族元素(如InP、InAs等)组成，也可以由两种或两种以上的半导体材料组成。量子点是把导带电子、价带空穴及激子在三个空间方向上束缚住的半导体纳米结构。由于导带电子和价带空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，受激后可以发射荧光。量子点在照明与显示领域的应用，是利用其改变入射光波长的性质，可利用不同大小结晶体控制波长。只要能精确控制结晶体的大小，即可精确控制颜色，且有相当广泛的发色范围。
量子点的发光光谱半高峰宽(Full Width at Half Maximum，FWHM)小，通常只有20～50nm，是一种非常良好的背光，具有量子点荧光粉背光的液晶显示器，通常其色域覆盖范围较YAG荧光粉背光的液晶显示器提升50％左右，可使液晶显示器颜色更加绚丽，使画面更具有立体感。
目前，量子点荧光粉在LED背光源中的应用，主要是在LED芯片封装完成后，将量子点荧光粉与硅胶等材料制备形成的混合胶体通过涂覆或其他工艺，在LED芯片的出光面上形成一量子点荧光粉薄膜。由于量子点荧光粉极易氧化失效，且量子点荧光粉温度淬灭现象严重，随温度升高，其发光效率下降严重。因此，前述方法中直接将量子点荧光粉在LED芯片上形成薄膜的方式，缺乏对量子点荧光粉的保护，严重缩短了量子点荧光粉的使用寿命，同时也降低了量子点荧光粉的发光效率，光色均匀性也随着降低。
发明内容
有鉴于此，本发明提供了一种量子点玻璃盒，对量子点荧光粉材料形成有效的保护，以解决目前的量子点荧光粉在LED芯片中的应用中，量子点荧光粉寿命短、发光效率低、光色均匀性差的问题。
为了达到上述目的，本发明采用了如下技术方案：
一种量子点玻璃盒，其中，包括玻璃盒以及量子点荧光粉材料，所述玻璃盒具有容置腔体，所述量子点荧光粉材料固化封装于所述容置腔体中。
其中，所述玻璃盒的壁厚为0.1～0.7mm。
其中，所述量子点荧光粉材料包括胶体材料以及混合于所述胶体材料中的量子点荧光粉。
其中，所述量子点荧光粉材料中，所述量子点荧光粉的重量百分比为1％～20％。
其中，所述量子点荧光粉为CdSe/ZnSe、CdSe/ZnS、CdS/ZnS、CdS/HgS、CdSe/ZnS/CdS、CdSe/CdS/ZnS、InP/CdS、CuInS或氧化石墨烯量子点。
其中，所述胶体材料为UV胶或IR胶。
本发明的另一方面是提供了如上所述的量子点玻璃盒的制备方法，其中，该方法包括步骤：
S101、制备一具有容置腔体的玻璃盒，所述玻璃盒具有流体连通至所述容置腔体的注入口；
S102、制备流体状的量子点荧光粉材料；
S103、将所述流体状的量子点荧光粉材料通过所述注入口注入到所述容置腔体内；
S104、应用固化工艺固化所述容置腔体内的流体状的量子点荧光粉材料；
S105、热熔密封所述注入口，获得所述量子点玻璃盒。
其中，步骤S104中，所述固化工艺为IR固化工艺、UV固化工艺或热固化工艺。
本发明还提供了如上所述的量子点玻璃盒在LED光源中的应用。
有益效果：
本发明实施例提供的量子点玻璃盒，将量子点荧光粉材料固化封装于玻璃盒中，可以防水防潮，防止量子点荧光粉氧化失效，有效延长了量子点荧光粉的使用寿命。将该量子点玻璃盒应用于LED光源中，相比于现有技术，可以解决量子点荧光粉寿命短、发光效率低、光色均匀性差的问题。
附图说明
图1是本发明实施例提供的量子点玻璃盒的俯视剖面图。
图2是本发明实施例提供的量子点玻璃盒的侧视剖面图。
图3是封装有量子点荧光粉材料之前的玻璃盒的结构示意图。
图4是本发明实施例提供的量子点玻璃盒的制备方法的工艺流程图。
图5是本发明实施例提供的LED光源的结构示意图。
图6是本发明实施例提供的LED光源中的固定支架的结构示意图。
具体实施方式
下面将结合附图以及具体实施例，对本发明实施例中的技术方案进行详细地描述，显然，所描述的实施例仅仅是本发明一部分实例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
参阅图1和图2，本实施例提供了一种量子点玻璃盒10，该量子点玻璃盒10包括玻璃盒11以及量子点荧光粉材料12。具体地，所述玻璃盒11具有容置 腔体111，所述量子点荧光粉材料12固化封装于所述容置腔体111中。
其中，如图3所示，在将量子点荧光粉材料12封装如玻璃盒11内之前，该玻璃盒12具有流体连通至所述容置腔体111的注入口112。进一步地，该玻璃盒12的壁厚优选的范围是0.1～0.7mm。
其中，所述量子点荧光粉材料12包括胶体材料以及混合于所述胶体材料中的量子点荧光粉。具体地，在该量子点荧光粉材料12中，所述量子点荧光粉的重量百分比可以选择为1％～20％。进一步地，所述量子点荧光粉可以选择为CdSe/ZnSe、CdSe/ZnS、CdS/ZnS、CdS/HgS、CdSe/ZnS/CdS、CdSe/CdS/ZnS、InP/CdS、CuInS或氧化石墨烯量子点(Graphene Oxide QDs)中的任意一种量子点荧光粉；所述胶体材料为UV胶(紫外光固化胶)或IR胶(红外光固化胶)。其中，由于量子点荧光粉不用与硅胶混合，而是选择可使量子点荧光粉混合更加均匀的胶体材料UV胶或IR胶，可以使得量子点荧光粉不易发生团聚。
下面介绍如上所述的量子点玻璃盒的制备方法。参阅图4的工艺流程图，该方法包括步骤：
S101、制备具有容置腔体和注入口的玻璃盒。如图3所示的，该玻璃盒12设置有有容置腔体111以及流体连通至所述容置腔体111的注入口112。
S102、制备流体状的量子点荧光粉材料。具体地，首先分别获取预定配比重量的量子点荧光粉和胶体材料，然后将量子点荧光粉和胶体材料混合，并且搅拌均匀。
S103、将所述流体状的量子点荧光粉材料通过所述注入口注入到所述容置腔体内。
S104、应用固化工艺固化所述容置腔体内的流体状的量子点荧光粉材料。具体地，所述固化工艺可以选择为IR(Infrared Ray，红外线)固化工艺、UV(Ultra-violet Ray，紫外线)固化工艺或热固化工艺。
S105、热熔密封所述注入口，获得所述量子点玻璃盒。
本实施例还提供了如上所述的量子点玻璃盒10在LED光源中的应用。如5所示，该LED光源包括一固定支架20，所述固定支架20由底部到顶部依次设置有一封装槽201和一安装槽202，安装槽202的宽度大于封装槽201的宽度。LED芯片30由封装胶40封装于所述封装槽201内，所述量子点玻璃盒10放置 于所述安装槽202中。LED芯片30发出的光穿过封装胶40再入射到量子点玻璃盒10中，激发量子点玻璃盒10中的量子点荧光粉材料发射荧光。
如上实施例提供的量子点玻璃盒，将量子点荧光粉材料固化封装于玻璃盒中，可以防水防潮，防止量子点荧光粉氧化失效，有效延长了量子点荧光粉的使用寿命。将该量子点玻璃盒应用于LED光源中，相比于现有技术，可以解决量子点荧光粉寿命短、发光效率低、光色均匀性差的问题。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
显然，本发明的保护范围并不局限于上诉的具体实施方式，本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (19)

  1. 一种量子点玻璃盒，其中，包括玻璃盒以及量子点荧光粉材料，所述玻璃盒具有容置腔体，所述量子点荧光粉材料固化封装于所述容置腔体中。
  2. 根据权利要求1所述的量子点玻璃盒，其中，所述玻璃盒的壁厚为0.1～0.7mm。
  3. 根据权利要求1所述的量子点玻璃盒，其中，所述量子点荧光粉材料包括胶体材料以及混合于所述胶体材料中的量子点荧光粉。
  4. 根据权利要求3所述的量子点玻璃盒，其中，所述量子点荧光粉材料中，所述量子点荧光粉的重量百分比为1％～20％。
  5. 根据权利要求4所述的量子点玻璃盒，其中，所述量子点荧光粉为CdSe/ZnSe、CdSe/ZnS、CdS/ZnS、CdS/HgS、CdSe/ZnS/CdS、CdSe/CdS/ZnS、InP/CdS、CuInS或氧化石墨烯量子点。
  6. 根据权利要求4所述的量子点玻璃盒，其中，所述胶体材料为UV胶或IR胶。
  7. 一种子点玻璃盒的制备方法，其中，该方法包括步骤：
    S101、制备一具有容置腔体的玻璃盒，所述玻璃盒具有流体连通至所述容置腔体的注入口；
    S102、制备流体状的量子点荧光粉材料；
    S103、将所述流体状的量子点荧光粉材料通过所述注入口注入到所述容置腔体内；
    S104、应用固化工艺固化所述容置腔体内的流体状的量子点荧光粉材料；
    S105、热熔密封所述注入口，获得所述量子点玻璃盒。
  8. 根据权利要求7所述的量子点玻璃盒的制备方法，其中，步骤S104中，所述固化工艺为IR固化工艺、UV固化工艺或热固化工艺。
  9. 根据权利要求7所述的量子点玻璃盒的制备方法，其中，所述玻璃盒的壁厚为0.1～0.7mm。
  10. 根据权利要求7所述的量子点玻璃盒的制备方法，其中，所述量子点荧光粉材料包括胶体材料以及混合于所述胶体材料中的量子点荧光粉。
  11. 根据权利要求10所述的量子点玻璃盒的制备方法，其中，所述量子点荧光粉材料中，所述量子点荧光粉的重量百分比为1％～20％。
  12. 根据权利要求11所述的量子点玻璃盒的制备方法，其中，所述量子点荧光粉为CdSe/ZnSe、CdSe/ZnS、CdS/ZnS、CdS/HgS、CdSe/ZnS/CdS、CdSe/CdS/ZnS、InP/CdS、CuInS或氧化石墨烯量子点。
  13. 根据权利要求11所述的量子点玻璃盒的制备方法，其中，所述胶体材料为UV胶或IR胶。
  14. 一种LED光源，包括量子点玻璃盒，其中，该量子点玻璃盒包括玻璃盒以及量子点荧光粉材料，所述玻璃盒具有容置腔体，所述量子点荧光粉材料固化封装于所述容置腔体中。
  15. 根据权利要求14所述的LED光源，其中，所述玻璃盒的壁厚为0.1～0.7mm。
  16. 根据权利要求14所述的LED光源，其中，所述量子点荧光粉材料包括胶体材料以及混合于所述胶体材料中的量子点荧光粉。
  17. 根据权利要求16所述的LED光源，其中，所述量子点荧光粉材料中，所述量子点荧光粉的重量百分比为1％～20％。
  18. 根据权利要求17所述的LED光源，其中，所述量子点荧光粉为CdSe/ZnSe、CdSe/ZnS、CdS/ZnS、CdS/HgS、CdSe/ZnS/CdS、CdSe/CdS/ZnS、InP/CdS、CuInS或氧化石墨烯量子点。
  19. 根据权利要求17所述的LED光源，其中，所述胶体材料为UV胶或IR胶。
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105185890A (zh) * 2015-08-10 2015-12-23 深圳市华星光电技术有限公司 Led光源结构及其封装方法
CN109001936A (zh) * 2017-06-06 2018-12-14 群创光电股份有限公司 光源模块及显示设备
KR102542426B1 (ko) 2017-12-20 2023-06-12 삼성전자주식회사 파장변환 필름과, 이를 구비한 반도체 발광장치
CN108203561A (zh) * 2017-12-27 2018-06-26 深圳市华星光电技术有限公司 一种导光板涂层、制备方法及背光模组结构
TWI690749B (zh) * 2018-09-21 2020-04-11 凌巨科技股份有限公司 顯示裝置及其製作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203071128U (zh) * 2012-12-29 2013-07-17 欧普照明股份有限公司 一种led封装结构
CN103681990A (zh) * 2013-12-11 2014-03-26 深圳市华星光电技术有限公司 Led封装件及其制作方法
WO2015004577A1 (en) * 2013-07-08 2015-01-15 Koninklijke Philips N.V. Wavelength converted semiconductor light emitting device
TW201530829A (zh) * 2013-11-13 2015-08-01 納諾柯技術有限公司 含有量子點磷光體的發光二極體蓋

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4828226B2 (ja) * 2005-12-28 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
US8361823B2 (en) * 2007-06-29 2013-01-29 Eastman Kodak Company Light-emitting nanocomposite particles
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
CA2781043A1 (en) * 2009-11-16 2011-05-19 Emory University Lattice-mismatched core-shell quantum dots
CN103025670B (zh) * 2010-07-28 2016-08-10 日本电气硝子株式会社 荧光体封入用毛细管的制造方法、荧光体封入用毛细管、波长变换部件和波长变换部件的制造方法
WO2013019330A1 (en) * 2011-07-29 2013-02-07 Corning Incorporated Solar-redshift systems
US9419174B2 (en) * 2012-09-26 2016-08-16 University Of Florida Research Foundation, Inc. Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
CN104838437B (zh) * 2012-10-04 2017-12-22 纳米技术有限公司 使用量子点的照明标识
CN105637061A (zh) * 2013-08-05 2016-06-01 康宁股份有限公司 发光的涂层和装置
CN103852817B (zh) * 2014-03-14 2016-05-11 宁波激智科技股份有限公司 一种应用于背光模组的量子点膜
KR101686737B1 (ko) * 2015-04-30 2016-12-14 엘지전자 주식회사 광 변환 플레이트, 이를 포함하는 발광 다이오드 패키지, 백라이트 유닛 및 표시장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203071128U (zh) * 2012-12-29 2013-07-17 欧普照明股份有限公司 一种led封装结构
WO2015004577A1 (en) * 2013-07-08 2015-01-15 Koninklijke Philips N.V. Wavelength converted semiconductor light emitting device
TW201530829A (zh) * 2013-11-13 2015-08-01 納諾柯技術有限公司 含有量子點磷光體的發光二極體蓋
CN103681990A (zh) * 2013-12-11 2014-03-26 深圳市华星光电技术有限公司 Led封装件及其制作方法

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