WO2017017482A1 - Procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques - Google Patents

Procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques Download PDF

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Publication number
WO2017017482A1
WO2017017482A1 PCT/IB2015/001263 IB2015001263W WO2017017482A1 WO 2017017482 A1 WO2017017482 A1 WO 2017017482A1 IB 2015001263 W IB2015001263 W IB 2015001263W WO 2017017482 A1 WO2017017482 A1 WO 2017017482A1
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WO
WIPO (PCT)
Prior art keywords
optical semiconductor
semiconductor devices
light
case
efficiency
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PCT/IB2015/001263
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English (en)
Inventor
István ABONYI
Original Assignee
Abonyi István
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Publication date
Application filed by Abonyi István filed Critical Abonyi István
Priority to EP15899527.4A priority Critical patent/EP3295769A4/fr
Priority to PCT/IB2015/001263 priority patent/WO2017017482A1/fr
Publication of WO2017017482A1 publication Critical patent/WO2017017482A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/053—Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention is a method for optimizing efficiency of optical semiconductor devices, allowing optical semiconductor devices such as light-emitting optical semiconductor devices, e.g. LEDs, and light-absorbing optical semiconductor devices converting light into electrical energy such as solar cells and solar panels to operate more optimally and with higher subsequent efficiency increase and longer lifetime than before.
  • optical semiconductor devices such as light-emitting optical semiconductor devices, e.g. LEDs, and light-absorbing optical semiconductor devices converting light into electrical energy such as solar cells and solar panels to operate more optimally and with higher subsequent efficiency increase and longer lifetime than before.
  • All optical semiconductor devices used in electronics have parameters that significantly depend on the temperature of use or operation. Consequently, the parameters of the optical semiconductor devices may significantly change at a specific temperature value. The parameters of all optical semiconductor devices significantly deteriorate with the increase of temperature. Therefore the aim is to make sure that the power amplifier unit converts the energy converted by the optical semiconductor devices with the best possible efficiency. This new application or connection method contributes to the subsequent optimisation or reduction of losses in optical semiconductor devices.
  • the first case it may be used for energy optimisation and subsequent efficiency increase in energy conversion.
  • the subsequent capacity optimisation of the optical semiconductor device is performed as loading.
  • the US2009184668 patent description makes known high efficiency boost led driver with output, which current driver for powering a string of LEDs has a boost converter coupled to an input voltage source.
  • a voltage multiplier circuit is coupled to the boost converter and to the string of LEDs.
  • a latch is provided having an output coupled to the boost converter.
  • a current sense element is coupled to the boost converter.
  • a current comparator is provided having an output coupled to a first input of the latch, a first input coupled to the current sense element, and a second input coupled to a reference current.
  • a zero-volt detector circuit is provided having an output coupled to a second input of the latch and an input coupled to the boost converter and the voltage multiplier circuit.
  • the US2011 156593 patent description makes known boosting driver circuit for light- emitting diodes.
  • the various embodiments relate to an light-emitting diode (LED) driver and related method that drives various LEDs in an LED string beyond their isolated nominal luminance.
  • LED light-emitting diode
  • Individual LEDs in an LED string may be thermally dependent so that specific LEDs may operate at higher temperatures without degradation. This may include driving specific LEDs beyond isolated nominal luminance when associated LEDs dim below their isolated nominal luminance. Such operation allows the LED to receive higher amounts of current and therefore exhibit higher luminous intensity.
  • a control circuit may monitor the forward voltage and temperature in a feedback loop to ensure that the LEDs in the string are operating below a defined maximum junction temperature.;
  • the control circuit may signal a processing unit to adjust adjacent circuits to compensate when the controlled LEDs cannot produce a requested luminance without operating beyond a maximum junction temperature.
  • the US201 1068637 patent description makes known a method for Maximum Power Point Tracking (MPPT) a photovoltaic cell by a power converter that provides an output current at voltages useful to operate electronics or charge batteries.
  • MPPT Maximum Power Point Tracking
  • This invention also relates to a method for Maximum Power Point Tracking (MPPT) multiple photovoltaic cells by a power combiner that combines the output of the multiple photovoltaic cells into a single output.
  • the power combiner is comprised of multiple power converters, one for each photovoltaic cell.
  • Each power converter used in these methods has an input-regulating element that has an output waveform with a characteristic that is related to the photovoltaic cell voltage and current. As a result only the photovoltaic cell voltage is directly measured in these methods and the photovoltaic cell current is determined indirectly.
  • the US2006174939 patent description makes known efficiency booster circuit and technique for maximizing power point tracking.
  • the invention provides an efficiency booster circuit and accompanying switch mode power conversion technique to efficiently capture the power generated from a solar cell array that would normally have been lost, for example, under reduced incident solar radiation.
  • the efficiency booster circuit generates an output current from the solar cell power source using a switch mode power converter.
  • a control loop is closed around the input voltage to the converter circuit and not around the output voltage. The output voltage is allowed to float, being clamped by the loading conditions. If the outputs from multiple units are tied together, the currents will sum. If the output(s) are connected to a battery, the battery's potential will clamp the voltage during charge.
  • the CN203193940 patent description makes known a boosting long-acting LED drive circuit without an electrolytic capacitor.
  • the output end of an input power supply Vi is connected with a series circuit formed by an inductance L and a switch element K in sequence.
  • the above circuit forms a boosting converting circuit, thereby providing stable DC output voltage for loads.
  • One end of the inductance L is connected with the anode of the DC power supply Vi, and the other end is connected with a collector electrode of the switch element K.
  • the collector electrode of the K is connected with the inductance L.
  • An emitting electrode is connected with a cathode of the DC power supply Vi.
  • a load LED is connected in parallel with the K.
  • a cathode of the LED is connected with the collector electrode of the K.
  • An anode of the LED is connected with the emitting electrode of the K.
  • the drive circuit just uses the inductance L, and the switch tube K to form the current converting circuit, thereby providing unidirectional pulse current for the load. In the circuit, no electrolytic capacitor is used, thereby prolonging service life of an LED driver.
  • the CN201499008 patent description makes known a pulse current charging connecting circuit for a solar panel belongs to a charging circuit which uses the solar energy as power supply, comprising a high-efficient solar panel, an electrolytic capacitor and a voltage mediating circuit. Two poles of the high-efficient solar panel are in parallel connection with the electrolytic capacitor and the voltage mediating circuit. The output voltage of the voltage mediating circuit can be connected with a LED light or a rechargeable battery.
  • the solar panel uses the high-efficient solar panel with two poles diaphanous.
  • the electrolytic capacitor in parallel connection with the solar panel is 10000 Uf/25V.
  • the solar panel provides a voltage of 1.5V.
  • the output voltage from the parallel connected electrolytic capacitor and voltage mediating circuit is 6V which can lighten the LED light and charge 3.7V lithium cell.
  • the utility model can be made into chargeable products or power supply, having simple structure, small volume, portability, convenient use, and the like.
  • the US201231961 1 patent description makes known a boost circuit for an LED (Light Emitting Diode) backlight driver circuit is disclosed; said boost circuit includes a PWM (Pulse Width Modulation) chip, a second capacitor, and a signal processing circuit.
  • a VCC pin of the PWM chip is coupled to the input node, and the PWM chip is utilized to generate a PWM signal.
  • One end of the second capacitor is coupled to an output pin of the PWM chip, and the second capacitor is utilized to filter out a direct current component of the PWM signal.
  • One terminal of the signal processing circuit is coupled to the second capacitor, and another terminal thereof is coupled to a gate of the switch.
  • the signal processing circuit is used to adjust the filtered PWM signal for generating corresponding high levels and low levels.
  • a regulator is omitted in the present invention, therefore reducing costs.
  • the WO2009134885 patent description makes known wide voltage, high efficiency led driver circuit.
  • PWM pulse width modulation
  • the light emitting diodes may be powered by a variety of power sources including batteries, supercapacitors or ultracapacitors.
  • the CN2882028 utility model makes known a winder bracket comprising a reel structure, a socket structure removably assembled on the reel structure, and a power cord that can be wound and one end of which is electrically connected with the socket structure.
  • the reel structure comprises two circular isolating baffles that are located at front and rear and parallel, and a hollow winding ring that is communicated and assembled between the inner circumferences of the baffles.
  • the socket structure comprises a reel body that can be assembled in removable way on the front end of the winding ring, and a plurality of sockets that are inlayed in the reel body and are electrically connected each other.
  • the power cord comprises a flexible conductive wire that is wound on the winding ring, and two plugs that are connected respectively at the two opposite ends of the wire and plugged respectively in the sockets in a removable way.
  • the removable structure of the socket structure allows a user to change the using pattern of the winder bracket as desired. Comparing and drawbacks the solutions according the state of the art:
  • the solar cell directly connects to the buffer capacity, and the circuit is not interrupted. Therefore it is used in a completely different way.
  • the energy efficiency is achieved by connecting the buffer condenser to the solar cell not continuously, but with 1-3% interruptions.
  • the next patent is a Chinese patent number CN 2882082 Y, title: SOLAR MODULE USING HIGH POWER SUPERHIGH CAPACITOR.
  • This U.S. pattern is similar to my concept only in using a buffer condenser the design of which within the circuit is completely different.
  • the buffer condenser connects to the circuit via an inductivity connected in series.
  • the buffer condenser operates in an inverter. As any other inverters, it converts the input energy with losses.
  • the several diodes connected in series result in losses in the inverter design, since there is a drop of 0.06V on the diodes, and the voltage drop on the three diodes significantly reduce the efficiency as the voltage drop on the diodes is converted into heat.
  • the buffer condenser is located after the AC LED driver, then this is interrupted with a duty cycle from 1 to 5%.
  • the LED optical semiconductor device has enough time to cool down. Consequently, its light efficiency capacity increases. This minimum interruption time allows us to achieve higher energy efficiency by utilizing the persistence time of the luminescent materials used in the light-emitting optical semiconductor devices, i.e. the LED.
  • the following patent to be compared is U.S. patent number US 8,193,741 B2, title BOOSTING DRIVER CIRCUIT FOR LIGHT-EMITTING DIODES.
  • This patent is compared only because it includes a buffer capacity, and the title of the patent contains the term "boost". In fact, it is not a real boost, as it only connects the circuit to the LED applied as an optical semiconductor device. As in the above cases, this solution does not boost or increase the efficiency of the LED used as an optical semiconductor device. It only allows the LED to use the characteristic changes caused by the temperature fluctuation in a more optimal way.
  • FIG 7 attached as an annex show how the brightness of LEDs used as high capacity optical semiconductor devices changes depending on the temperature. This clearly indicates that even a change by a few C degrees dramatically affects the efficiency of the optical semiconductor device.
  • FIGs 8 and 9 attached as annexes show correlations with the temperatures of solar cells used as optical semiconductor devices.
  • the figures clearly indicate that the higher the temperature the lower the efficiency. This definitely confirms that any temperature reduction results in efficiency increase. This temperature reduction can be achieved by using a duty cycle from 1 to 5% to subsequently increase the efficiency.
  • my aim was, among others, to increase the efficiency of light-emitting optical semiconductor devices.
  • my aim was to subsequently increase the efficiency of optical semiconductor devices generating electricity from light energy, such as solar panels, on the basis of this invention, of the same principle.
  • the invention is a method for optimizing efficiency of optical semiconductor devices, allowing optical semiconductor devices such as light-emitting optical semiconductor devices,, and light-absorbing optical semiconductor devices converting light into electrical energy to operate more optimally and with higher subsequent efficiency and longer lifetime than before, where in if the voltage of the light-emitting optical semiconductor devices is interrupted with a short duty cycle, possibly of 1-5%, then they can cool down to a greater extent, and thereby their ambient temperature will be lower, and so their characteristic efficiency valid for all optical semiconductor devices resulting from the temperature reduction will increase.
  • the optical semiconductor devices are light-emitting devices in one case, and high capacity LEDs in the other case.
  • the luminescent material is illuminated by means of excited light only for a certain period, and not continuously, and the excitation is followed by a certain break to allow us to utilize the maximum persistence energy, and the switching frequency is specified so as to result in the maximum light output during the excitation time of the luminescent material.
  • LEDs light-emitting optical semiconductor devices
  • the circuit subsequently increasing the efficiency of the LEDs is largely similar to the drive of pulse laser diodes, however, while in that case the circuit is switched on only for 1-5% of the time and is interrupted during the rest of the time, and the energy accumulated in condenser C is discharged to the pulse laser diode for the time of the short pulse, then in the case of the invented solution this is on the contrary, and the circuit is switched off for 1-5% of the time, and is switched on during the rest of the time.
  • optical semiconductor devices are devices converting light energy into electric power, in certain cases solar cells or solar panels in the second case.
  • the optimizing circuit is a control circuit with a processor which activates the switch element on the basis of the signal from a heat sensor and a voltage meter
  • the switch element may be any type of switch element having the specific properties.
  • the signal from the solar cell steeply charges buffer condenser C, and then the switch element controlled by a unit with a processor interrupts the signal in function of the preset value of the heat sensor element, and thereby the solar cell is not continuously loaded, and a short break between 1 and 5% is enough to avoid heating up of the solar cell under the load to a great extent.
  • the short break and the capacity value of buffer C have proven to be sufficient to significantly increase the efficiency of the solar cells, and therefore the capacity value can be increased by up to 30% depending on the parameters set in accordance with the system of the solar cells.
  • condenser C is a buffer condenser the size of which depends on the specific capacity.
  • a transistor - or in a specific case - a FET transistor is used as a switch element, which must have the lowest inner resistance.
  • Fig 1 shows the layout of the circuit block implementing the procedure in the first case, i.e. in high capacity LED drives.
  • Fig 2 shows a potential circuit diagram for the blocks indicated on Fig 1.
  • the pulse series shown on Figs 3 and 4 indicate the connection interval of the LED efficiency optimizing circuit covered by this invention.
  • Fig 5 shows the block diagram of the subsequent efficiency increasing circuit covered by this invention for the control of the control circuit of the solar cell.
  • Fig 6 shows a potential circuit diagram for the blocks indicated on Fig 4 and intended to control solar cells.
  • the characteristic curve shown on Fig 7 indicates the connection interval of the drive of the solar cell control circuit using the solution covered by the invention.
  • Fig 8 The characteristics shown on Fig 8 indicate how the brightness of high capacity light- emitting (LED) optical semiconductor devices changes depending on the temperature according to the state of the art.
  • Figs 9 and 10 show the correlations between the efficiency and temperature of solar cells converting light energy by means of optical semiconductor devices according to the state of the art.
  • Fig 1 shows the layout of the circuit block implementing the procedure in the first case, i.e. in high capacity LED drives.
  • box 1 contains the LED driver
  • box 2 contains the optimizing circuit
  • box 3 contains the LED chip.
  • Fig 2 shows a potential circuit diagram for the blocks indicated on Fig 1.
  • Fig 2 shows that component 1, the buffer component in this case, is an energy storage condenser C.
  • Component 2 is a control circuit with a processor.
  • Component 4 is a sensor measuring both voltage and temperature.
  • Components 3 are switch elements, which can be, in fact, any type of switch element having the specific properties. Voltage points +UT1 and UT2 are indicated on the figure. The circuit is driven from point +UT1, and the LED or solar cell is located always at point +UT2. The LED subsequent efficiency increasing circuit is largely similar to the drive of the pulse laser diodes. However, in that case the circuit is switched on only for 1 to 5% of the time, and is interrupted during the rest of the time. In that case, the energy accumulated in condenser C is discharged to the pulse laser diode for the time of the short pulse, as it is shown on Fig 3.
  • component 1 is buffer condenser C, the size of which depends on the specific capacity.
  • Component 2 is a circuit marked with micro symbol, which is a microprocessor switch element.
  • Component 3 is a switch element (Q), which is a semiconductor switch element. In this case, this is a FET transistor, as it is very important for it to have the minimum inner resistance.
  • right hand point UT2 connects to both the solar controller and the optical semiconductor LED drive circuit. As regards the use of the circuit, right hand point UT2 connects to both the optical semiconductor solar cell and the optical semiconductor LED.
  • the pulse series shown on Figs 3 and 4 indicate the connection interval of the LED efficiency optimizing circuit covered by this invention.
  • I indicated repetition time T of the pulse series as well as On condition Tl and Off condition T2.
  • the drive is performed not at 20-50 times the specific current, but with l-2x impulse currents, and only for a period allowed on the basis of the data of the LED chip provided by the manufacturer.
  • the luminescent material may be illuminated by means of excited light only for a certain period, and not continuously.
  • the excitation is followed by a certain break to allow us to utilize the maximum persistence energy.
  • the switching frequency is specified to result in the maximum light output during the excitation time of the luminescent material.
  • Fig 5 shows the block diagram of the optimizing circuit covered by this invention for the control of the control circuit of the solar cell. In the case of the latter application, this block diagram has been created to subsequently increase the efficiency of the solar cell.
  • box 1 contains the solar cell
  • box 2 contains the optimizing circuit
  • box 3 contains the control circuit of the solar cell.
  • Fig 6 shows a potential circuit diagram for the blocks indicated on Fig 5 and intended to control solar cells.
  • Fig 6 shows that the right hand input connects from the solar cell via switch element 3 to the buffer, energy storage condenser C.
  • Component 2 is a control circuit with a processor.
  • Component 3 is the switch element itself, which can be, in fact, any type of switch element having the specific properties (steep ramp and minimum inner resistance).
  • the last component connects to the solar cell controller at the two blue output points.
  • the horizontal line represents time t
  • the vertical line represents voltage U for the solar cell controller. This figure shows that the circuit is switched on for more than 95% of the given period.
  • Figure 7 shows that the signal from the solar cell steeply charges buffer condenser C. Then, in response to the switch element, it interrupts it in accordance with the preprogrammed function of circuit 2 provided with a processor, which depends on the Therefore the solar cell will not be continuously loaded.
  • the short break between 1 to 5% is enough for the solar cell not to warm up during that time under the load. This short break has proven to be enough to increase the efficiency of the solar cells.
  • the parameters set depending on the system of solar cells may increase the capacity value by up to 20-30%. Based on these two applications, it is clear that significant capacity increase can be achieved in both applications. Additional Figs 8, 9, and 10 present comparisons between the above solutions mentioned in the state of the art.
  • Fig 8 The characteristics shown on Fig 8 well illustrate how the brightness of LEDs implemented as high capacity optical semiconductor devices changes depending on the temperature. This clearly indicates that even a change by a few C degrees dramatically affects the efficiency of the optical semiconductor device.
  • Figs 9 and 10 show the correlations between the efficiency and temperature of solar cells implemented with optical semiconductor devices. The characteristics shown on these figures clearly indicate that the higher the temperature of the energy converting optical semiconductor device the lower the efficiency. This definitely confirms that any temperature reduction results in efficiency increase. This temperature reduction can be achieved by using a duty cycle from 1 to 5% to increase the efficiency. PREFERRED EMBODIMENTS, ADVANTAGES:
  • high capacity light-emitting devices implemented with optical semiconductor devices, LEDs.
  • inserting the circuit between the factory LED drive input and the factory LED chip can significantly increase the light- emitting capacity of the LED, while the capacity does not change, only the efficiency of light conversion increases.
  • the differential energy is achieved by increasing the efficiency of the electricity/light conversion of the LED.
  • the current high capacity LED chips does not reach 50% efficiency.
  • Using this circuit layout allows up to 75% efficiency, which is proved by laboratory measurements.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'objet de l'invention est un procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques, permettant à des dispositifs semiconducteurs optiques tels que des dispositifs semiconducteurs optiques d'émission de lumière, par exemple des LED, et des dispositifs semiconducteurs optiques absorbant la lumière qui convertissent la lumière en énergie électrique, comme des cellules solaires et des panneaux solaires, de fonctionner de manière plus optimale et avec une augmentation d'efficacité ultérieure plus grande et une durée de vie plus longue qu'avant. La solution selon l'invention est caractérisée en ce que si la tension des dispositifs semiconducteurs optiques d'émission de lumière est interrompue avec un rapport cyclique court, éventuellement de 1-5 %, ils peuvent alors refroidir dans une plus grande mesure, leur température ambiante sera ainsi inférieure, et leur efficacité caractéristique valide pour tous les dispositifs semiconducteurs optiques qui résulte de la réduction de température augmentera ainsi. Dans un cas, les dispositifs semiconducteurs optiques sont des dispositifs semiconducteurs d'émission de lumière optiques, dans un cas donné des LED de forte puissance. Dans d'autres cas, les dispositifs semiconducteurs optiques sont des dispositifs qui convertissent l'énergie lumineuse en énergie électrique, dans un cas donné des cellules solaires ou des panneaux solaires.
PCT/IB2015/001263 2015-07-27 2015-07-27 Procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques WO2017017482A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP15899527.4A EP3295769A4 (fr) 2015-07-27 2015-07-27 Procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques
PCT/IB2015/001263 WO2017017482A1 (fr) 2015-07-27 2015-07-27 Procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques

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Application Number Priority Date Filing Date Title
PCT/IB2015/001263 WO2017017482A1 (fr) 2015-07-27 2015-07-27 Procédé d'optimisation de l'efficacité de dispositifs semiconducteurs optiques

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090153076A1 (en) * 2007-12-14 2009-06-18 Delta Electronics, Inc. Driving circuit and method for reducing operating temperature of led package
US20110156593A1 (en) * 2009-12-24 2011-06-30 Nxp B.V. Boosting driver circuit for light-emitting diodes
WO2012024540A2 (fr) * 2010-08-18 2012-02-23 Volterra Semiconductor Corporation Circuits de commutation pour extraire de l'énergie d'une source d'alimentation électrique et procédés associés
US20130062942A1 (en) * 2010-03-25 2013-03-14 Jochen Hantschel Solar inverter for an extended insolation range and operating method
GB2496139A (en) * 2011-11-01 2013-05-08 Enecsys Ltd Photovoltaic power conditioning circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6949909B2 (en) * 2003-12-04 2005-09-27 Chia-Chang Chuang Solar energy pulse charge device
KR101003072B1 (ko) * 2010-06-18 2010-12-21 테크원 주식회사 태양광 조명출력 제어방법
GB2484535B (en) * 2010-10-15 2015-08-12 New Lighting Technology Ltd Illumination apparatus and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090153076A1 (en) * 2007-12-14 2009-06-18 Delta Electronics, Inc. Driving circuit and method for reducing operating temperature of led package
US20110156593A1 (en) * 2009-12-24 2011-06-30 Nxp B.V. Boosting driver circuit for light-emitting diodes
US20130062942A1 (en) * 2010-03-25 2013-03-14 Jochen Hantschel Solar inverter for an extended insolation range and operating method
WO2012024540A2 (fr) * 2010-08-18 2012-02-23 Volterra Semiconductor Corporation Circuits de commutation pour extraire de l'énergie d'une source d'alimentation électrique et procédés associés
GB2496139A (en) * 2011-11-01 2013-05-08 Enecsys Ltd Photovoltaic power conditioning circuit

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EP3295769A4 (fr) 2018-12-05

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