WO2017011246A1 - Universal surface-mount semiconductor package - Google Patents
Universal surface-mount semiconductor package Download PDFInfo
- Publication number
- WO2017011246A1 WO2017011246A1 PCT/US2016/041169 US2016041169W WO2017011246A1 WO 2017011246 A1 WO2017011246 A1 WO 2017011246A1 US 2016041169 W US2016041169 W US 2016041169W WO 2017011246 A1 WO2017011246 A1 WO 2017011246A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- package
- plastic
- die pad
- packages
- die
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000004033 plastic Substances 0.000 claims abstract description 333
- 229920003023 plastic Polymers 0.000 claims abstract description 333
- 238000004519 manufacturing process Methods 0.000 claims abstract description 177
- 229910052751 metal Inorganic materials 0.000 claims abstract description 161
- 239000002184 metal Substances 0.000 claims abstract description 161
- 239000004020 conductor Substances 0.000 claims abstract description 53
- 239000002775 capsule Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 218
- 229910000679 solder Inorganic materials 0.000 claims description 182
- 238000007639 printing Methods 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 149
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 133
- 239000010949 copper Substances 0.000 description 132
- 229910052802 copper Inorganic materials 0.000 description 132
- 239000010410 layer Substances 0.000 description 77
- 238000013461 design Methods 0.000 description 64
- 230000009977 dual effect Effects 0.000 description 55
- 101100028477 Drosophila melanogaster Pak gene Proteins 0.000 description 46
- 241000272168 Laridae Species 0.000 description 39
- 239000000047 product Substances 0.000 description 38
- 238000000465 moulding Methods 0.000 description 36
- 238000005476 soldering Methods 0.000 description 32
- 238000007747 plating Methods 0.000 description 31
- 238000005452 bending Methods 0.000 description 30
- 239000004593 Epoxy Substances 0.000 description 23
- 230000008901 benefit Effects 0.000 description 23
- 238000010276 construction Methods 0.000 description 23
- 239000011295 pitch Substances 0.000 description 20
- 230000002829 reductive effect Effects 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 15
- 238000005520 cutting process Methods 0.000 description 15
- 238000004806 packaging method and process Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000004080 punching Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000002991 molded plastic Substances 0.000 description 10
- 235000021251 pulses Nutrition 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- MPTQRFCYZCXJFQ-UHFFFAOYSA-L copper(II) chloride dihydrate Chemical compound O.O.[Cl-].[Cl-].[Cu+2] MPTQRFCYZCXJFQ-UHFFFAOYSA-L 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000010297 mechanical methods and process Methods 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- KKQWHYGECTYFIA-UHFFFAOYSA-N 2,5-dichlorobiphenyl Chemical compound ClC1=CC=C(Cl)C(C=2C=CC=CC=2)=C1 KKQWHYGECTYFIA-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000002411 adverse Effects 0.000 description 6
- 230000032798 delamination Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000010561 standard procedure Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000005226 mechanical processes and functions Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 244000046052 Phaseolus vulgaris Species 0.000 description 3
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- -1 copper Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000010137 moulding (plastic) Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000037390 scarring Effects 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 240000009038 Viola odorata Species 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 235000019988 mead Nutrition 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 101100002344 Caenorhabditis elegans arid-1 gene Proteins 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 102220517543 Calcium uniporter protein, mitochondrial_S92A_mutation Human genes 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000288673 Chiroptera Species 0.000 description 1
- 206010016275 Fear Diseases 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- 241000288140 Gruiformes Species 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 244000211187 Lepidium sativum Species 0.000 description 1
- 235000007849 Lepidium sativum Nutrition 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 101100098973 Mus musculus Cct5 gene Proteins 0.000 description 1
- 241001237728 Precis Species 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000009189 diving Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- KVFIJIWMDBAGDP-UHFFFAOYSA-N ethylpyrazine Chemical compound CCC1=CN=CC=N1 KVFIJIWMDBAGDP-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- JCCNYMKQOSZNPW-UHFFFAOYSA-N loratadine Chemical compound C1CN(C(=O)OCC)CCC1=C1C2=NC=CC=C2CCC2=CC(Cl)=CC=C21 JCCNYMKQOSZNPW-UHFFFAOYSA-N 0.000 description 1
- 229940102689 lustra Drugs 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 206010037833 rales Diseases 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92162—Sequential connecting processes the first connecting process involving a wire connector
- H01L2224/92166—Sequential connecting processes the first connecting process involving a wire connector the second connecting process involving a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- This invention relates to semiconductor packaging including methods and apparatus designed to fabricate and use surface mount packages in printed circuit board assembly.
- semiconductor devices and ICs are generally contained in semiconductor packages comprising a protective coating or encapsulant to prevent damage during handling and assembly of the components during shipping and when mounting the components on printed circuit boards.
- the encapsuiant is preferably made of plastic.
- the plastic "mold compound” is injected into a moid chamber at an elevated temperature surrounding the device and its interconnections before cooling and curing into a solid plastic.
- Such packages are comm only referred to as injection molded using a method known as "transfer molding".
- interconnection to the device is performed through a metallic leadfraoie, generally of copper, conducting electrical current and heat from the semiconductor device or "die” into the printed circuit board and its surroundings.
- Connections between the die and the ieadframe generally comprise conductive or insulating epoxy to mount the die onto the leadframe's "die pad", and metallic bond wires, typically gold, copper, or aluminum, to connect the die's surface connections to the leadframe.
- solder balls, gold bumps, or copper pillars raay be used to attach the topside connections of die directly onto the lead frame,
- the leadframe acts as an electrical and thermal conductor in the finished product
- the leadframe temporarily holds the device elements together until the plastic hardens.
- the packaged die is separated or "singulated" from other packages also formed on the same leadframe by mechanical sawing or by mechanical punching. The saw or punch cuts through the metal leadframe and in some instances through the hardened plastic too.
- a metallic leadframe typically of copper, comprises at least two conductors 1A and IB electrically isolated from one another and held together by molded plastic 6, Conductor 1A, the die pad, has
- die attach layer 10 typically comprising epoxy, conductive epoxy, or solder.
- Die pad comprising conductor 1A then extends outside of molded plastic 6 into a conductive lead mechanically bent to form bent portion 2A and flat portion 3A.
- the surface of semiconductor die 4 includes one or more exposed metallized areas for electrical connections (not shown), electrically connected by bond wire 5 and possibly others (not shown), comprising gold, copper, aluminum or conductive metallic alloys.
- bond wire 5 connects a portion of semiconductor die 4 to conductor IB.
- Conductor IB extends laterally outside of molded plastic 6 and through bent portion 2B and flat portion 36 onto conductive trace 76 in PCB 9.
- Solder 8B electrically and mechanically connects flat portion 36 of conductor 16 to PCB conductive trace 78.
- gull wing packages owing to their curved lead shape.
- mechanical processes are imperfect and subject to unavoidable variability.
- Attempts to scale gull wing packages to thin dimensions, i.e. to manufacture low profile gull wing packages fail below imm heights because the mechanical variability becomes and intolerable percentage of the total package height
- gull wing packages are not able to serve the market for thin products and such packages have been completely eliminated from ceil phone and tablet designs.
- Other products where gull wing packages persist because of their relatively low cost are, however, unable to be miniaturized in part because of the minimum height restrictions of gull wing packages.
- gull wing packages do not normally include a thick exposed die pad to act as a heat sink and without special design modifications are therefore unable to dissipate any significant power or spread heat effectively.
- one advantage of gull wing packages is their compatibil ity with low-cost "wave-solder" PCB assembly methods. Wave-solder based PCB manufacturing is significantly easier and cheaper than reflow assembly used in high tech PCB factories for cell phones and tablets, offering a cost advantage per PCB area of 2X to 4X over reflow assembly.
- PCB cost per board area is a dominant economic consideration overriding concerns or the limitations in lead coplanarity, package height, and power dissipation suffered by gull wing packages.
- Gull wing type packages include small outline or "SO" packages such as the eight-lead SOPS, the sixteen-lead SOP16, etc; the three pin small outline transistor or "SOT” package such as the SOT23; the thin small outline package or TSOP package such as the six-lead TSOP6; the thin super small outline package such as the sixteen lead TSSOP1.6, the quad leaded flat pack such as the 24-lead QFP24, and the low-profile quad leaded flat pack such as the 28 lead LQFP.
- the term "low-profile” is historic as compared to other gull wing packages of the day and sti ll requires at least a 2mm minimum height, i.e. not low profile by today's standards for low-profile meaning package heights ranging from 0.4mm to 0,8mm.
- Figure IB illustrates the cross section of another type of surface mount package unable to scale to thin dimensions.
- the package known as the transistor outline or "TO" type package, is used for power packages needed for dissipating and spreading heat from a power semiconductor device or voltage regulator into a printed circuit board.
- Popular TO packages include the leaded TO-220 for through hole mounting and its surface mount versions, the TO-252 also known as the DPAK, and the TO-263 or D2PAK.
- Such power packages rely on die pad IC with an exposed back side as a heatsink in order to achieve heat spreading, improve package power dissipation, and lower the package's thermal resistance.
- die pad IC may include an additional heat tab ID extending laterally from die pad iC beyond molded plastic 6
- Power semiconductor die 4 is attached to die pad IC using die attach 10 which generally comprises conductive epoxy or solder.
- the backsi de of sem iconductor die 4 generally includes a backside metal such as a tri-metal sandwich of titanium, nickel and silver or gold to form a solder able backside.
- the tri-metal sandwich is deposited on the backside of the die during wafer fabrication after mechanical and chemical thinning and roughening of the substrate. The roughening is required both for good adherence as well as to insure good ohmic contact, i.e. low contact resistance, between the metal and the semiconductor.
- the surface of semiconductor die 4 includes one or more exposed metallized areas for electrical connections (not shown), connected electrically to conductive lead IB by bond wire 5 and possibly others (not shown)/ comprising gold, copper, aluminum or conductive .metallic alloys, in this example, bond wire 5 connects a portion of semiconductor die 4 to conductor 18.
- Conductor IB extends laterally outside of molded plastic 6 and through bent portion 2B and flat portion 38 onto conductive trace 78 in PCB 9.
- Solder 8B electrically and mechanically connects flat portion 38 of conductor IB to PCB conductive trace 7B.
- Manufacturing of the device involves mechanically bending leads to form bent portion 2 B and others ⁇ not shown] such that the bottom of fiat portion 3B is eoplanar with the exposed bottom surface of die pad 1C for mounting on a flat surface . , i.e. PCB 9.
- mechanical processes are imperfect and subject to unavoidable variability, leading to mismatches between the bottom of flat portion 3B and die pad 1C.
- solder 8B In PCB 9 board assembly, solder 8B, typically formed by wave-soldering easily covers package lead flat portion 3B but as shown by solder 8A is unable to cover heat tab I D. As a result, a layer of additional solder 11 must be place atop PCB conductor 7 A before mounting the power package, using wave-soldering.
- the operation of placing solder onto the PCB is generally performed one package at a time, using pick and place machines, or in low cost factories, manually, using low- cost factory workers. Aside from its poor coplanarity between the bottom of leads and the back of an exposed die pad and its inability to scale to thin package profiles, the need for manual placement of the solder under the heat tab is another disadvantage of conventional surface mount power packages.
- FIG. 2 illustrates a flow chart of a process for manufacturing leaded surface mount packages. Both packages start with copper sheet 20. The width of the sheet is matched in width to the machines intended to handle and process the strip in assembly, The thickness of the copper is typically 2 ⁇ 0 ⁇ « ⁇ for ICs and SOGjim for power packages, in the case of ICs . , as indicated in step 2 IB, a one side masked etch is optionally performed to define the die pad, leads, as well as the leadframe rail and tie bars used to hold everything together during processing, in the case of power packages, as indicated in step 21A, the leadframe must be selectively thinned to distinguish the leads from the thick die pad.
- a second etch is then required to define the die pad, leads, as well as the leadframe rail and tie bars used to bold everything together during subsequent processing.
- a punch can be used to define the die pad .
- leads and support then a stamp can foe used selectively to squeeze metal locally to thin it This mechanical process, while faster than etching, creates several problems.
- compressed metal exhibits mechanical stress not present in etched leadfranies. Stress can lead to cracking of plastic or silicon die contacting the stressed metal
- the excess metal squeezes out the sides of the thinned, lead and must be removed by trimming.
- the leadframe is now ready for die attach 22 comprising either epoxy for ICs or conductive epoxy or solder for power packages.
- die attach 22 wire bonding 23A is performed using gold or copper wire for ICs and using copper or aluminum wire for power packages. Alternatively, for power devices., after bonding the gate wire in step 23 A, the clip lead is attached for the high current connection to the device's topside in step 23B.
- step ' 24 leadframe specific molding 24 is performed, meaning each leadframe requires its own customized leadframe cavity design to insure the plastic is located only around specific regions containing the semiconductor, wire bonds and portions of the leadframe, but not containing the lead extensions, tie bars and leadframe rails.
- defiash operation in step 25 removes excess plastic using mechanical or chemical processes.
- the post-molded copper leadframe is plated with tin, nickel zinc; or palladium and then chemically etched to remove any excess plating material (step 26), Lastly the leads are bent and cut in step 27, separating each packaged die and its corresponding leads from others manufactured on the same leadframe.
- Unit cost comprises material and labor costs plus the initial investment divided by the U PH.
- the mold machine must be reheated, and recalibrated often with some test runs to confirm that it is working well before running any production material through it Down time for changing the mold tool can be an hour or longer, reducing the average throughput and increasing production net cost per unit As much as possible, factory management will choose to avoid changing the mold tool during a work shift, delaying a specific customer's production for one or more shifts, or even for days to maximize factory throughput, even at the expense of customer service.
- Photo 3QA illustrates l € leadframe 33A prior to molding including conductive leads 33A and die pad 33B, in the example shown the lead frame comprises 22 leads on each of two sides of the plastic body thereby comprising a 44 lead, also known as a 44-pin, surface mount package.
- the die pad, semiconductor die and bond-wires are encapsulated by plastic, leaving only the exterior portion of conductive leads 33B exposed.
- every die pad is covered by its own separately molded plastic, as defined by a moid cavity tool uniquely for the specific package type. After singulation, i.e.
- FIG. 33 A and 33 B The number of conductive leads may vary considerably, with dual-sided packages having from two to seven dozen leads on each side. Common duai-side packages include 3, 4, 6., 8, 12, 16, 18, 20, 24, 28, 32, 36, 40, 44 and 48 leads in total.
- Figure 3B illustrates several examples of small outline or "SO" type packages including the ubiquitous SO-8, a small outline package with 8-leads 33E shown in perspective view 3 IE from above and from underneath in view 32E.
- package 3 IF has 1 (Meads 33F
- package-31G includes 16-leads 33F.
- the package shown in topside view 3 ID includes 2 (Meads 330
- the underside view 32D of the same package illustrates exposed die pad 341) used to improve thermal conduction. Guaranteeing eoplanarity between exposed die pad 341) and the bottom of leads 33D in manufacturing however remains problematic. Therefore most SO type packages such as the 36-Sead package shown in topside view 31C and underside view 32C do not include an exposed die pad and are not intended for power applications.
- Low pin count packages such as those shown in Figure 3C are commonly used for single transistors, dual transistors, or small analog integrated circuits such as voltage regulators, provided that the component's power dissipation is limited.
- Such packages may include the small outline transistor or SOT23 package 3 IK having three leads 33K, the thin small outline package or TSOP including a 5-lead version 3311 shown in topside and underside views 313H and 32H, 6-!ead version 33L shown in topside view 31 L, and the improved area efficiency J-lead wide-body package known as the TSOP-JW shown in topside and underside views 3 If and 32).
- bend underneath the package to accommodate a larger package body and die area than conventional gull wing packages, While the name suggests the package lead has a j shape, the process of mechanical lead bending actually produces an inverse gull wing, essentially the same as other gull wing packages except the leads are bent under the package body instead of outside.
- Higher pin count packages utilize the placement of gull wing shaped leads on all four sides of a package, and are therefore referred to as leaded quad flat packs or LQFP packages.
- topside and underside views 31M and 32M illustrate a 32- lead LQFP having 8 gull-wing leads 33M on each side of the package while topside and underside views 31 H and 32 N illustrate a 48-Iead LQFP having 16 gull-wing leads 33N per side.
- Topside and underside views 310 and 320 illustrate a LQFP with gull wing leads 330 and exposed die pad 340.
- maintaining good coplanarity between the bottom of exposed die pad 340 and leads 330 is problematic since the alignment is entirely mechanical and subject to unavoidable manufacturing variability. This variability is especially severe in low profile packages so LQFP packages with exposed die pads typically have heights of 1 mm or greater.
- Another class of packages comprising bent and stamped metal leadframes are those used in transistor outline or "TO" type power packages such as the aforementioned DPAK and D2PAK as shown in top perspective views 3 IP and 35P and top view 31Q in Figwre 3E.
- the conductive leads 33P and 33Q are bent into place during manufacturing ideally to be coplanar with the bottom of heat tab 36Q, Leads 33Q as sho wn, vary in width being slightly wider in the middle of the lead.
- the leadframe construction of view 30R shown prior to trimming and singulation illustrates the location of tie bar 37R connected to leads 33R as well as die pad 34R and heat tab 36R, While the top view appears eopianar f the actual leadframe is mechanically stamped into a multi-planar construction shown in perspective view 30S, where die pad 34$ and heat tab 36S are stamped and compressed to a height below that of leads 33S and tie bar 37S,
- Figure 3F illustrates various alternative packages comprising a combination of DPAK-iike heat sink design with an eight lead package similar in outline to the S0P8.
- the power device sits atop a die pad connected to four leads 40A and where bond wires 39A connect the die's top metallization to three leads used to carry high current and to another lead for the transistor's gate or input in top view 388, the power device sits atop a die pad connected to four leads 40B and a bond wire connects to the gate input lead hut the power-carrying bond wires have been replaced with copper clips 398.
- Top views 38C and 38E illustrate alternate designs for clip leads 39C and 39E.
- Top view 38 D illustrates the use of a large number of gold or copper wires 39D to achieve a low package resistance while eliminating the need for large diameter bond wires or clips.
- perspective view 38F illustrates an alternate clip lead design 39F where even the gate lead is connected by a copper clip.
- the copper clip comprises leads that are mechanically bent in portion 41 F so that the bottom of the clip lead 40F is designed to be coplanar with the back of heat tab 42F.
- FIG. 3H Examples of a SOP type small power packages are shown in the photographs of Figure 3H illustrating the underside view 45 G of a package with four leads 40G not connected to the die pad and one exposed die pad 42G with a connected heat tab.
- Underside view 45H illustrates a design where exposed die pad 420 does not connect to a heat tab but instead connects to four additional leads other than leads 40 H not connected to die pad 42H,
- Top view 45J and underside view 46J illustrate one such package with two through-hole leads 40J.
- a similar package is shown in top perspective view 45 N and underside view 46N.
- Top-view 45K illustrates another package with two long through-hole leads 40K and heat tab 42 K.
- Top view 45L and underside view 46L illustrate one such package with three long through-hole leads 40L and heat tab 42 L
- Perspective view 450 illustrates a long lead package with seven leads 400 and heat tab 420.
- Top perspective views 46P and 450 reveal a package .with heat tab 42P and complex lead bending resulting in leads 40P bent into two distinct rows. Mounting of packages with two rows of bent leads 40M is shown in side perspective view of power package 45M mounted on a PCB.
- Leadless Packages Another class of surface mount semiconductor package is the "leadless" or “no lead” package. Unlike leaded packages where the conductor connecting the semiconductor die to the outside world protrudes out the sides of the package's protective plastic body, in a leadless package, the conductors connected to the device or 1C are available for connection to a PCB only on the underneath side of the package and not through leads protruding from the package.
- leadless packages Because no leads protrude from the package, leadless packages have several unique properties, some advantageous and some restrictive. Being leadless, the areal efficiency of leadless packages is significantly improved compared to leaded packages. Package area efficiency, the maximum die size divided by the external footprint, i.e. the lateral extent of the leads or plastic whichever is larger, is poor for leaded packages because a lot of space is wasted by the need to bend the lead down to the PCB surface.
- Package area efficiencies of 20% to 30% or worse are not uncommon for small packages like SOT and TSOP packages where significant portions of the package's area and volume are "wa sted" by plastic and metal available for the semiconductor die, i n contrast, leadless package can have area efficiencies in the 70% to 80% range, And because no metal extends from the sides of the leadless package, there is less risk of electrical shorts to neighboring component's.
- other components on a PCB can be put closer to a leadless package than to a leadless one, i.e. leadless packages don't require as large of keep- out zone on the PC B,
- the benefit of a smaller "keep-out" is a higher PCB area! efficiency . , meaning it is possible to pack more semiconductor die area in the same PCB space. So ieadless packages offer both better package area! efficiency and PCB area! efficiency than leaded packages.
- Ieadless packages are intrinsically copianar.
- the bottom of every electrical connection appearing on the underside of a Ieadless package are, by definition, in the same geometric plane as all the others because they constitute a common piece of copper.
- No lead bending is involved in forming the pins so no mechanical variability is present in forming the package's exposed conductors, also known as outer leads or "lands".
- the die pad is formed from the same uniformly thick common copper sheet as the exposed conductors comprising the package's el ectrical connections or conductive lands, the bottom of the die pad is intrinsically copianar with all the package's connections. Consequently, the die pad of a Ieadless package is naturally exposed on the package's underside, i.e. not isolated from the PCB, as an unavoidable artifact of its manufacturing process, if an isolated or unexposed die pad is desired, extra-steps must be incurred in the Ieadless package fabrication sequence to insure plastic fully encapsulates the die pad during molding.
- FIG. 4 illustrates the cross section of a leadframe SO showing multiple products being manufactured concurrently. As shown,
- semiconductor die 54A is attached to exposed die pad 51A using either conductive or insulating epoxy. Bond wire 55A electrically connects semiconductor die 54A to conductive land 518, and bond wire 558 electrically connects semiconductor die 54A to conductive land SIC, The entire device including the leadframe, die, and bond wires is encapsulated in molded plastic 56. In an adjacent section of leadframe 50, semiconductor die 54B is attached to exposed die pad 51D and electrically connected to landing pad 51E by bond wire 55C and other connections (shown only in part). Separate products are defined by saw lines 59, so although conductive lands 51 B and 5 IE, and similarly conductive lands SIC and 51 F actually comprise common pieces of copper, during sawing they are separated into different products.
- solder or solder paste 61 must be applied before placing the package onto the PCB. This means solder or solder paste 61 must be printed or screened onto the PCB in select places as part of PCB manufacturing. After the product is positioned on top of the solder paste, the PCB is run through a ' "refiow oven” or belt furnace to heat the solder paste past its melting point and electrically and mechanically connect the product's conductive lands 51C and 51B and exposed die pad 51A to the PCB conductive traces 7. Because, however, the solder paste must be screened onto the PCB in advance, and an expensive
- manufacturing cost for refiow PCB manufacturing can be twice to four times the cost of simple wave- soldering, where the PCB and components are simply dipped in solder. This higher PCB assembly cost represents one of the major disadvantages of leadless packaging.
- step 60 The manufacturing process for leadless packages is illustrated in the flow chart shown in Figure 5, where a copper sheet (step 60) is either etched or stamped (step 61) to define the leadframe's die pad, conductive lands . , tie bars, and rails, then plated with a solderabte metal (step 62) such as tin, nickel, etc. to inhibit oxidation of the copper.
- a copper sheet step 60
- step 61 etched or stamped
- step 62 solderabte metal
- product manufacturing may commence comprising die attach (step 63), wire bonding (step 64), molding (step 65), sawing or punching for singulation (step 66), and delash etching (step 67) to remove any plastic residue leftover from sawing or punching, Unlike leaded packages, where each individual part requires its own predefined mold cavity to isolate the plastic around a single product, in leadless package manufacturing entire matrices or arrays of products are assembled and then molded into one common block of plastic.
- This process is il lustrated pictorial ly in Figure 6A where one common leadframe 70A prior to molding comprises the die pads and conductive lands for hundreds of distinct and separate products 71 A on a single leadframe.
- the leadfrarne after molding 72 A however contains only a few large blocks of molded plastic 73A, each block containing dozens of products to be separated by sawing or punching. As such different size products can be
- FIG. 6B A variety of four sided leadless packages made using the aforementioned process are illustrated in Figure 6B.
- four-sided leadless packages are referred to as quad fiat no-lead packages or QFN packages.
- quad fiat no-lead packages or QFN packages The term four-sided or quad means that electrical connections are present on all four edges of the package but are not necessarily limited to having the same number of conductive landings on each edge.
- the QFN shown in bottom view 75B has a total of 20 conductive Ian dings 76B comprising 6 conductive landings on two edges and four conductive landings on the other two edges, it also has an exposed die pad 77B, which may electrically be connected to one of the conductive landings.
- the top perspective view 74B clearly reveals no leads are evident on the package or protruding from its sides. Only small pieces of metal, saw-cut flush with the plastic package sidewali, reveal the location of the conductive landings. While constituting a visibly identifiable feature, the exposed metal on the package vertical sidewali is not sufficient in area for soldering. Instead, electrical connection must be made underneath the package, directly to conductive landings 76B, Similarly, underside view 75C illustrates a package with 48 conductive landing pads 76C, sixteen on each edge as well as an exposed die pad 77C. The top view 74C shows no protrusions identifying the presence of conductive leads.
- Underside view 751) illustrates a underside view of a QFN type leadless package with an exposed die pad 77D and 40 conductive landings 760, ten on each edge and its corresponding topside view.
- Another QFN package design also with 40 conductive landings 76H is shown in underside view 75E except that die pad 77E is larger than that of die pad 771) in the previous design.
- underside view 74F in Figure 6C illustrates a package with 48 landing pads 76F, sixteen on each of four sides, but with an exposed die pad 77F comprising only a small fraction of the total package area and footprint.
- Variations in die pa d design are especially evident in smaller QFN packages such as contrasted by the package with underside view 751 having a large die pad 771 with 16 conductive landings versus the package of underside view 75 j having a relatively large die pad 77J with 12 conductive landings.
- a rectangular QFN shown in top perspective view 74Q and underside view 75Q comprises 38 conductive landings 76Q, combining 12 conductive landings positioned along the package's long edges with 7 conductive landings located on the short edge, Exposed die pad 77Q may be electrically connected to one or more of the conductive landings or be electrically isolated, enabling the package to support 39 distinct electrical connections,
- conductive landings are located on only two of the package's edges instead of ail four.
- Such packages are referred to as DFN packages, where DFN is an acronym for dual-sided fiat no-lead packages, Examples include the DFN package shown in underside view 75P comprising elongated die pad 77P and six conductive landings 76P and package shown in underside view 75T also comprising 6 conductive landings 76T and an alternately shaped die pad 77T.
- die pad 77T may be electrically shorted to one or more of the conductive landings or may be electrically independent
- a rectangular DFN comprises exposed die pad 77R with 7 conductive landings on each long edge of the package.
- the DFN design can be adapted for as little as two conductive landings 76K as shown in the package with underside view 75K as shown in Figure 6E.
- Exposed die pad 77 K functions as a third electrode making the package shown in topside perspective view 74K suitable for single transistors.
- Another leadiess package for transistors is shown in the underside view 75S comprising two conductive landings 76S and smai! die pad 77S.
- Leadiess package manufacturing for QFN and DFN packages can also support dual die designs using two separated die pads as illustrated by the rectangular package shown in Figure 6F.
- a QFN package comprises two distinct exposed die pads 77G, six evenly spaced conductive landings 76G on the package's two short edges and seven unevenly spaced conductive landings on both of its long edges.
- topside perspective view 74G appears identical to a single pad package of the same dimensions.
- Another dual die pad package shown in above perspective view 74H and in underside view 75 H has two distinct exposed die pads 77 H with six conductive landings 76H, three on each of two edges.
- a longer aspect ratio design is illustrated by the package with underside view 7511 with 8 conductive landings 76U and two separate die pads 7711, in PCS assembly care must be taken to prevent shorts between the two die pads by insuring sufficient spacing.
- leadiess packages can also be manufactured without any exposed die pad,
- the DFN package with underside view' 75N comprises eight conductive landings 76N three each on opposing edges while the underside view 750 represents a package with ten conductive landings 760,
- extra processing steps must be included to eliminate the exposed die pad
- a QFN with a curved edge is illustrated where conductive landings 76M and the width of the base of the package shown in underside view 75M is larger in dimension than the top of the package shown in topside perspective view 74M.
- Such a package cannot be manufactured in the standard process described for QFN and DFN fabrications because sawing or punching unavoidably results in a perfectly vertical edge side-wall to the package with all the plastic and metal cut flush by the saw outline. Instead, such a package requires a separate mold cavity tool for each unique package much like the manufacturing of leaded packages like the SOP, SOT, and DPAK.
- solder Because no metal lead protrudes laterally from the package, wave-soldering cannot penetrate beneath the package to solder the die pad and the conductive landings onto the PCB conductors, instead, the solder must be screened using a mask onto the PCB before component placement Also, solder flow must be performed In expensive reflow ovens or belt furnaces making the entire PCB assembly process 2 to 4 times more expensive than that of simple wave-solder factory based production. Moreover, visual inspection of leadless packages soldered to a PCB using simple automated camera inspection is impossible because the solder cannot be confirmed from the top view. Instead expensive X-ray inspection equipment is required, adding cost and safety risk into reflow PCB manufacturing.
- leaded packages such as the SOP and SOT offer a cost advantage in PCB assembly because they are wave-solder compatible and easily assembled onto low cost PCBs manufactured in fully depreciated PCB factories dating back to the 1950's, Nevertheless, despite its benefit in PCB manufacturing, the actual ⁇ package, manufacturing of leaded packages suffers from many issues including poor lead coplanarity, poor manufacturing control in the lead bending process, risk of plastic cracking during lead bending, risk of delamination between the plastic and leads, and inability to be scaled into low profile package, especially for package heights below 1 mm,
- leaded packages Another disadvantage of leaded packages is their manufacturing inflexibility .
- Several manufacturing steps required in leaded package manufacturing demand the use of dedicated machinery and hardware, including a package-specific mold cavity tool, paekage-speciflc ieadframe trim -and -bending machinery, package-specific dedicated handlers, package-specific defunk and defiash hardware, and more. While equipment can generally be converted to accommodate different packages, the resulting factory downtime to convert a line from one package to another results in lost productivity and a lower UPH, thereby increasing per unit manufacturing costs.
- the process of this invention utilizes a leadirame that is preferably , but not necessarily, fabricated in accordance with the methods described in the above-referenced U.S. Application No. 14/056,287,
- the ieadirame comprises a plurality of die pads and leads.
- Each of the die pads and its associated leads generally correspond to a finished package, although some packages may include two or more die pads.
- Some of the leads and die pads are connected together, the leads to be included in adjacent packages may be connected together across "streets' * where the packages will eventually be separated, and for additional stability during fabrication tie bars and rails may be used to connect the die pads and leads to each other.
- the leads may be Z-shaped when, vie wed in a vertical cross section and, if so, they each comprise a vertical column segment, a cantilever segment and a foot.
- the cantilever segment projects horizontally inward towards the die pad at the top of the vertical column segment, and the foot projects horizontally outward at the bottom of the vertical column segment.
- the vertical column segment typically forms .right angles and sharp corners with the cantilever segment and with the foot.
- the bottom surface of the foot is coplanar with a bottom surfaces of the feet of oilier leads and with a bottom surface of the die pad, if exposed, in other embodiment, the lead does not comprise a foot, and it is also possible that the lead does not comprise a cantilever segment,
- a lead may be attached to a die pad.
- a heat slug extends from the die pad to improve thermal conduction, and the heat slug may terminate in a foot.
- the ieadframe may be fabricated using a process that comprises forming a first mask layer on a backside of a metal sheet and then partially etching the metal sheet through openings in the first mask layer in areas where the cantilever segments of the leads are to be located, and where gaps between the leads and the die pads and between the leads themselves, are to be located, and in the areas between adjacent packages. If the die pads is to be isolated, there are also openings in the first mask layer where the die pads are to he located. If the die pads are to be exposed, the mask layer covers where the die pads are to be located, and those areas are not etched. The partial etch through the openings in the first mask layer does not cut through the entire metal sheet, and a thinned layer of metal remains in the etched areas.
- the process further comprises forming a second mask layer on a front side of the metal sheet, the second mask layer having openings overlying the gaps between the die pads and the leads and between the leads, the areas where the feet of the leads, if any, are to be located, and the areas between adjacent packages.
- the metal sheet is then etched through the openings in the second mask layer. This etch is continued until the metal is completely removed in the areas where the gaps between the die pads and the leads and between the leads are to be located and in the areas separating adjacent packages, but the metal is only partially removed in the area where the feet of the leads, if any, are to be located.
- the openings in first mask layer under the cantilever segments of the leads and the openings in the second mask layer overlying the feet of the leads, if any, are vertically offset, from each other such that segments of the metal sheet between the cantilever segments and the feet remain unaffected by either of the etch processes. These ira-etched segments will become the vertical col umn segments of the leads, If the die pads are to be exposed, the areas in which are the die pads are to be formed remain un-etched.
- a metal stamping process may be used in lieu of the etch processes described above.
- a first metal stamp is applied to the first side of the metal sheet to compress and thin the metal sheet where the cantilever segments of the leads and the gaps between the die pads and the leads and between the adjacent packages are to be located (and optionally where the die pads are to be located).
- a second metal stamp is applied to the second side of the metal sheet to sever the metal sheet where the gaps between the die pads and the leads and between adjacent packages are to be located and to compress and thin the metal piece where the feet of the leads, if any, are to be located.
- the result is typically a leadframe with multiple die pads, each die pad being associated with a plurality of leads. If the package is to have leads only on t wo opposite sides of the die pad (a "dual" package), the die pad is typically held in place in the leadframe by means of at least one tie bar.
- the leads on the contiguous sides of adjacent packages typically extend across a "street" where the packages will be separated, or “singulated,” and are typically connected together by rails.
- the die pad is sometimes left connected to at least one of the associated leads, that is, no gap is formed between the die pad and the at least one of the associated leads in the above-described etching or stamping processes. Whether by a tie bar, an attached lead, or both, the die pad remains connected to the leadrrame.
- Semiconductor dice are then mounted on their respective die pads, and the appropriate electrical connections are made between the dice and the leads, typically using wire bonding or flip-chip techniques.
- the backsides of the dice may or may not be electrically and/or thermally connected to the die pads.
- a single mold is used to form a single plastic block over a plurality of die pads, and their associated leads, tie bars and rails in the leadframe.
- the packages are then singulated using one or more laser beams.
- the plastic block is separated into plastic protective capsules for each of the packages using a first laser beam, which is normally moved in a series of parallel adjacent scans in the areas between the packages.
- the scans are performed in two sets, orthogonally related to each other, to separate the plastic into individual capsules.
- a second laser beam is used to remove the metal conductors that typically connect adjacent packages and any rai ls that may connect the metal connectors together. Again., this is normally performed in a series of parallel adjacent scans in the "streets" between the packages.
- the laser scans of the first laser bean extend to the top surfaces of the cantilever segments of the leads, the sidewalls of the plastic capsules will be located there, and the leads will protrude from the sidewalls of the plastic capsule, if the laser scans of the first laser bean extend to the top surfaces of the column segments of the leads, the sidewalls of the plastic capsules will be located there, and the outer sidewalls of the column segments will remain exposed.
- the sidewalls of the plastic capsules will be located there, and the feet will extend from the sidewalls of the plastic capsule but the outer sidewalls of the column segments of the leads will remain covered by the plastic capsule. If the scans of the first laser beam cover only the "street" to be formed by the scans of the second laser beam, the sidewalls of the plastic capsules wil l be copknar wi th the ends of the leads, and a lea d!ess package will be formed.
- the wavelength and other characteristics of the first laser beam will be such that the first laser beam does minimal damage to the metal conductors embedded in. or underlying the plastic block.
- a solder layer is printed on the bottom surfaces of the di e pad, if exposed, and/or the bottom surfaces of the leads.
- s package treated in this way can be attached to a PCB by merely placing the package on top of the PCB and heating the package and PCB so as to melt the solder layer.
- the package may also to subjected to a wave-solder process to attach leads on which a solder layer has not been formed to appropriate traces or contacts on the PCX.
- the techniques of this invention thus allow a wide variety of different types and sizes of semiconductor packages to be fabricated without the need for specialized equipment. This is attained by essentially varying the patterns of openings in the mask layers applied to the backside and front side surfaces of a metal sheet and by varying the combined width of the l aser scans used to separate the plastic block into capsules for each package. Where footed packages are used, the bottom surfaces of the feet are assured of being coplanar, and the difficulties inherent in the bending of leads to form gull-wing packages are avoided.
- Fig. 1A is a cross-sectional view of a leaded IC surface mount package.
- Fig, IB is a cross-sectional view of a leaded surface mount power package with heat slug.
- Fig, 2 is a flow chart for leaded surface mount package fabrication.
- Fig, 3A comprises a topside view of leaded surface mount leadframe and package before and after moldin «.
- Fig, 3B comprises topside and underside perspective views of various dual-sided leaded IC surface mount packages.
- Fig. 3C comprises topside and underside perspective views of various dual sided low-pin-eount leaded IC surface mount packages..
- Fig, 3D comprises topside and. underside perspective views of various four-sided LQFP leaded surface mount packages.
- Fig, 3E comprises topside views of leaded surface mounted power packages and leadframes.
- Fig. 3F comprises topside and perspective views of IC surface mount leadframes adapted for power applications.
- Fig, 3G is a side view of a surface mounted ! C leadirame adapted tor power applications.
- Fig. 3H comprises topside and underside views of IC surface mount packages adapted for power applications.
- Fig. 31 comprises topside and perspective views various leaded power packages.
- Fig. 4 is a cross sectional comparison of a Ieadless package before and after singulation.
- Fig. 5 is a flow chart for Ieadless surface mount package fabrication.
- Fig, 6A comprises a topside view of Ieadless surface mount Ieadframe and package before and after molding.
- Fig. 6B comprises various topside and underside views of QFN four sided ieadless surface mount packages.
- Fig. (fC comprises various alternate topside and underside views of QFN four sided Ieadless surface mount packages.
- Fig. 6D comprises various alternate topside and underside views of elongated Ieadless surface mount packages.
- Fig. 6E comprises various -alternate topside and underside views of low pin count Ieadless surface mount packages.
- Fig. 6F comprises various alternate topside and underside views of Ieadless surface mount packages with multiple exposed die pads.
- Fig, 6G comprises various alternate topside and underside views of DFN dual sided Ieadless surface mount packages.
- Fig. 6H is a topside and underside view of a Ieadless surface mount package using a dedicated QFN mold cavity tool.
- Fig. 7 A is a cross sectional representation of universal surface mount package (USMP) Ieadframe regions during double etching fabrication.
- USMP universal surface mount package
- Fig. 7B is one possible flow chart for USMP Ieadframe fabrication.
- Fig, 8A is a cross sectional illustration of a leadframe manufactured using a viable US MP fabrication sequence.
- Fig. 8B is a cross sectional illustration of a leadframe manufactured using a problematic USMP fabrication sequence.
- Fig, 9A is a cross sectional illustration of various two and three region geometric leadframe elements resulting from the disclosed USMP leadframe fabrication sequence.
- Fig. 9B is a cross sectional illustration of various three region geometric leadframe elements resulting from the disclosed USMP leadframe fabrication sequence.
- Fig. 9C is a cross sectional illustration of various USMP geometric leadframe elements including fully etched portions.
- Fig, 90 is a cross sectional illustration of various USMP geometric leadframe elements including fully etched portions.
- Fig, 10 A is a plan view of a USMP IC leadframe before molding.
- Fig, 10 B is a plan view of a block molded leaded IC leadframe.
- Fig. IOC is a cutaway view of a block molded leaded IC leadframe.
- Fig, lOD is a plan vie w of a segmented block molded leaded IC leadframe.
- Fig. 10E is a plan view of a USM P DPAK leadframe before molding.
- Fig. lOF is a plan view of a block molded DPAK leadframe.
- Fig. lOG is a cutaway view of a block molded DPAK leadframe.
- Fig, ⁇ is a plan view of a segmented block molded DPAK leadframe.
- Fig, 11 A is a cross sectional illustration of USMP package street fabrication steps for a footed package.
- Fig. 11 B is a cross sectional illustration of USMP package street fabrication for a leadless package.
- Fig, I I C is a cross sectional illustration of USMP package street fabrication for an alternate footed package.
- Fig. 12 A is a cross sectional illustration of USM P laser singulation and foot formation.
- Fig, 12 B is graph of the optical absorption spectra of various metals.
- Fig. 12C Is a schematic representation of a laser system for USMP street fabrication.
- Fig, 120 is a leadframe illustrating USMP ' horizontal street fabrication.
- Fig, 12E is a leadframe illustrating USMP vertical street fabrication.
- Fig. 12F is a schematic of USMP street fabrication laser scan, patterns for plastic and metal removal.
- Fig. 12G is a plan view of a USMP fabricated footed package.
- Fig. HE is a schematic of alternate USMP street fabrication laser scan patterns for eliminating tie bar artifacts.
- Fig. 13 is a USMP flow chart for footed and leadless package fabrication.
- Fig. 14 A is a cross sectional view of USMP footed package fabrication illustrating starting copper sheet.
- Fig, 14B is a cross sectional view of USMP footed package fabrication illustrating leadframe backside etch masking.
- Fig, 14C is a cross sectional view of USMP footed package fabrication illustrating leadframe front side etch masking.
- Fig. 14D is a cross sectional view of USMP tooted package fabrication illustrating leadframe after front side etching.
- Fig. I4E is a cross sectional view of USMP footed package fabri cation illustrating leadframe after die attach.
- Fig. 14F is a cross sectional view of USMP footed package fabrication illustrating leadframe after wire bonding.
- Fig. 14G is a cross sectional view of USMP footed package fabrication illustrating leadframe after molding.
- Fig. 14H is a cross sectional view of USMP footed package fabrication illustrating leadframe after laser plastic removal.
- Fig. 141 is a cross sectional view of USMP footed package fabrication illustrating leadframe after laser singulation and foot formation.
- Fig. 14 J is a cross sectional view illustrating how the footed package can be converted into a leadless package.
- Fig. ISA is a cross sectional view of USMP packages contrasting footed and leadless package types.
- Fig, 158 is a cross sectional view of USMP packages contrasting alternate types of footed and leadless packages.
- Fig. 15C is a cross sectional view of USMP packages contrasting footed and leadless package types but with isolated die pads.
- Fig, tSD is a cross sectional view contrasting different types of leaded USMP power packages.
- Fig. 15E is a cross sectional view of a leaded power package fabricated using the USMP process.
- Fig. 15.F is a. cross sectional view of a. leaded surface mount power package fabricated using the USMP process as a gull wing package replacement.
- Fig, 16 is a perspective view of lead construction of footed packages fabricated • using the USMP process.
- Fig, ⁇ 7 ⁇ comprises multiple views of a footed USMP package- Fig, 17.B comprises multiple views of an alternate embodiment of a footed USMP package.
- Fig, ⁇ 7C comprises multiple views of a leadless package fabricated with the USMP process.
- Fig. 170 comprises multiple views of an alternative embodiment of a leadless package fabricated with the USMP process.
- Fig, ⁇ 7 ⁇ comprises multiple views of another alternative embodiment of a leadless package fabricated with the USM P process.
- ISA comprises multiple views of a leaded package fabricated with the USMP process.
- Fig. 18B comprises multiple views of a leaded surface mount package fabricated with the USMP process.
- Fig. I8C comprises multiple views of a power package heat tab fabricated with the USMP process.
- Fig. 19A comprises cross sectional views of exposed and isolated die pad USMP leadframes along a cutlke through a die-pad-conneeted foot and an isolated foot
- Fig. 19B comprises cross sectional views of exposed and isolated die pad USMP leadfraraes along a symmetric ciuSine through die pads and tie bars.
- Fig, 19C comprises cross sectional views of exposed and isolated die pad USMP leadframes along a symmetric outline through die-pad-connected feet.
- Fig. 190 comprises cross sectional views of exposed die pad USMP leadframes along a outline through a heat tab and feet.
- Fig, 19E comprises a cross sectional view of an exposed die pad USMP leadframes along a cutline through a heat tab and tie bar.
- Fig. 19F comprises cross sectional views of exposed and isolated die pad USMP leadframes along a symmetric cutline through feet not connected to the die pad.
- Fig. 19G compri ses c ross sectional vie ws of exposed and isolated di e pad USMP leadframes along a symmetric cutline through die pads.
- Fig, 1911 comprises cross sectional views of exposed die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
- Fig, 191 comprises cross sectional views of isolated die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
- Fig. 19 J comprises cross sectional views of mixed isolated and exposed die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
- Fig. 19K comprises cross sectional views of isolated die pad USMP leadframes along a symmetric cutline through dual die pads and die-pad connected feet.
- Fig, 19L comprises a cross sectional and bottom view a Z -shaped foot not connected to a die pad.
- Fig, 20A comprises various views of a 2-footed USMP with isolated and exposed die pads.
- Fig. 20B comprises v arious views of an alternate embodiment of a 2-footed USMP with isolated and exposed die pads.
- Fig, 20C comprises various views of a 2-footed USMP with isolated and exposed die pads and a three-sided foot.
- Fig. 2iD comprises various views of an alternate . embodiment of a 2-footed USMP with isolated and exposed die pads and a three-sided foot
- Fig. 21 A comprises various views of a 3-footed U SMP with isolated and exposed die pads.
- Fig, 218 comprises various views of a 3 -footed USMP with isolated and exposed die pads and a three-sided foot.
- Fig. 21 C comprises various views of a 3-footed power USMP with heat tab.
- Fig. 210 comprises various views of an alternate -embodiment of a 3-footed power USMP with heat tab.
- Fig. 22A comprises various views of a 4-footed USMP with, isolated and exposed die pads.
- Fig, 22B comprises various views of a 6-footed USMP with i solated and exposed die pads.
- Fig. 22C comprises underside views of 8, 12, and 18-tooted USMPs with exposed die pads.
- Fig. 22D comprises underside views of 8, 12, and 18 ⁇ footed USMPs with isolated die pads.
- Fig. 23A comprises underside views of 16 ⁇ footed USMPs with single and dual exposed die pads.
- Fig, 23B comprises underside views of alternate embodiments -of 16-footed USMPs with dual exposed die pads.
- Fig. 23C comprises underside views of 1 io-footed USMPs with dual isolated die pads.
- Fig. 23D comprises underside views of 16-footed USMPs integrating isolated and exposed die pads.
- Fig, 24A comprises underside views of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
- Fig. 24B comprises underside views of alternati ve embodiments of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
- Fig. 24C comprises cross sectional views of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
- Fig. 24B comprises cross sectional views of alternative, embodiments of 16- footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
- Fig. 24E comprises cross sectional views of alternative embodiments of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
- Fig. 24F comprises cross sectional views of alternative embodiments of 16 ⁇ footed USMPs integrating dual exposed die pads with, enhanced pad-to-pad spacing.
- Fig. 24G comprises cross sectional views of a 16-footed USMPs integrating a single exposed die pads cantilever lead extensions
- Fig, 24H compri ses cross sec t ional views of a 16 ⁇ footed U SM Ps integrating an exposed die pad, an isolated die pad, and a cantilever lead extension
- Fig. 241 comprises cross sectional views of an alternative embodiments of 16- footed USMPs integrating an exposed die pad,, an isolated die pad, and a cantilever lead extension
- Fig. 24 J comprises cross sectional views of other alternative embodiments of 16- footed USMPs integrating an exposed die pad, an isolated die pad, and a cantilever lead extension
- Fig, 25A comprises underside views of 16- footed USMPs integrating exposed die pads with isolated interconnections.
- Fig. 25B comprises underside views of alternative embodiments of 16-footed USMPs integrating dual exposed die pads with isolated, interconnections.
- Fig. 26 A comprises a perspective view of a 16-footed quad USMP.
- Fig. 26.B comprises an underside view of a 16-footed quad USMP with an exposed die pad.
- Fig. 26C comprises an underside view of a 16-footed quad USMP with an Isolated die pad.
- Fig, 27 A comprises underside views of 4 and 6-footed quad USMPs with exposed die pads.
- Fig. 27B comprises underside views of 8 and 10-footed quad USMPs with exposed and isolated die pads.
- Fig, 27C comprises underside views of 8-foofed quad USMPs with exposed and isolated die pads and die-pad attached feet.
- Fig, 27D comprises " underside views of 8 ' arid l ' O-footed ' rectangular-shaped quad USMPs with exposed and isolated die pads.
- Fig. 28 A comprises underside views of 12-footed quad USMPs with exposed and isolated die pads.
- Fig. 288 comprises underside views of 16-footed rectangular-shaped quad USMPs with exposed and Isolated die pads.
- Fig. 29 A comprises an underside view of a 20-footed rettaagular-shaped quad USMP with an exposed die pad.
- Fig, 29 B comprises an underside vi ew of a 20-footed recfenguiar-shaped quad USMP with an isolated die pad.
- Fig. 30 A. comprises an underside view of a 48-footed quad USMP with an exposed die pad.
- Fig. 30B comprises an underside view of a 48-footed quad USMP with an isolated die pad.
- Fig, 30C comprises an underside view of an al ternate embodiment of a 48-footed quad USMP with an isolated die pad.
- Fig, 31 comprises various views of a power USMP integrating a . multi-foot, package with an extended heat tab.
- Fig. 32A comprises various views of a USMP including intra-lead tie bars.
- Fig, 32B comprises an underside view of a USMP leadframe with intra-lead tie bars.
- Fig. 32C illustrates the primary laser paths: For defining package leads and performing singulation of a quad USMP.
- Fig, 32 D comprises an underside view of a USMP package with infra-lead tie bars ' after singulation.
- Fig, 32E illustrates an underside view of a quad USMP illustrating laser tie bar removal.
- Fig. 33A comprises an underside view of dual isolated pad USMPs utilizing intra- lead tie bars.
- Fig, 33B compri ses an underside view of alternative embodiments of dual isolated pad USMPs utilizing intra-lead tie bars and isolated interconnects.
- Fig. 34A comprises an underside view of a wave-soldembie heat tab power USMP including a thermal comb.
- Fig. 34B compri ses an underside view of a wave-solderable heat tab power USMP leadframe including a thermal comb.
- Fig, 34C illustrates the primary laser paths for defining package leads and perforrarag singulation of a power USMP with a beat tab.
- Fig. 35A comprises an underside view of an alternative embodiment of a wave- solderable heat tab power USM P with a thermal comb.
- Fig, 35 B comprises an underside vi e w of an alternative embodiment of a wave- solderable heat tab power USMP leadframe.
- Fig. 35C comprises an underside view of a U SMP power package illustrating laser formation of a thermal comb.
- Fig. 36A comprises an underside view of a wave-solderable heat tab power USMP with a bolt-hole.
- Fig, 36B illustrates laser paths for forming a bolt hole in a wave-soiderable heat tab power USMP.
- Fig, 37 illustrates a block diagram of various manufacturing flows for USMP leadframe plating.
- Fig. 38 illustrates a cross sectional view of a USMP pre-plated power package leadframe.
- Fig. 39 illustrates a cross sectional view of a USMP formed using plating after molding.
- Fig. 40 illustrates sequential cross sectional views of USMP fabrication comprising selective leadframe plating.
- Fig. 41 A ill ustrates sequential cross sectional views of PCB assembly of a USMP utilizing PCB solder printing.
- Fig, 41B illustrates cross sections depicting potential manufacturing issues involving die tilt dining USMP assembly.
- Fig. 42A illustrates a block diagram of various mamifacturing flows for USMP fabrication including solder printing.
- Fig. 42B illustrates USM P cross sections of power and exposed die pad IC packages utilizing USMP preprinted solder.
- Fig, 43 A illustrates a cross sectional representation of PCB U SMP assembly steps utilizing USMP pre-printed solder.
- Fig, 43 B illustrates a cross sectional representation ofPCB assembly prior to wave-soldering, including both US MP power packages and USMP IC packages.
- Fig. 43C illustrates a cross sectional representation of PCB assembly after wave- soldering, including both USMP power packages and USMP IC packages.
- Fig, 44A illustrates USMP power packages with uniform and patterned preprinted solder.
- Fig. 44B illustrates USMP integrated circuit quad packages, both with uniform and patterned USMP pre-printed solder.
- Fig. 44C illustrates test probe placement using pre-printed solder of USMP fabricated packages.
- Fig, 45 illustrates a cross section of an isolated die pad with customized conformal heater blocks required in USMP manufacturing.
- Fig, 46 illustrates cross sections of two variants of isolated die pad USMPs utilizing a thermally conductive electrically insulating pre-mold compound.
- Fig. 47 illustrates the fabrication flow chart of an isolated die pad USMP with a thermally conductive electrically insulating pre-mold compound.
- Fig. 48 illustrates an alternative embodiment of isolated die pad USMP fabrication utilizing thermally conductive electrically insulating pre-mold compound.
- Fig. 49 A illustrates an o verhead view of a saw type QFN3x3-12L leadframe and its corresponding footed USMP equivalent.
- Fig. 49B illustrates an overhead view of a saw type QFN4x4- 16L- leadframe and its corresponding footed USMP equivalent.
- Fig. 49C illustrates an overhead view of a punch type QFN4x4 ⁇ 24L leadframe and its corresponding footed USMP equivalent.
- Fig. 49D illustrates a table comparing saw type and punch 4x4 QFN leadless packages with the 4x4 QFF footed package
- Fig. 49E illustrates an overhead view of a saw type TDFN5x6-8L leadframe and its corresponding footed USMP equivalent.
- Fig. S0A illustrates an overhead view of a conventional TO-252 (DPAK) leadframe and its corresponding footed USMP equivalent
- Fig. SOB illustrates perspective and underside views of an alternative emboditerrorismit of a footed DPAK.
- Fig. 50C illustrates perspective and underside views comparing conventional and footed DPAK packages.
- Fig, SOD illustrates perspective views and one underside view of conventional, and footed DPAK packages.
- Fig. 50E illustrates a table comparing a conventional, leaded DPAK to two footed DPAK packages.
- Fig. 51 A illustrates an overhead view of a conventional SOT23 leadframe and i ts corresponding footed USMP equivalent.
- Fig, 51 B illustrates a table comparing conventional and footed SOT23 packages.
- Fig. 52 A illustrates an overhead view of a conventional TSSOP-SL leadiraroe and its corresponding footed USMP equivalent.
- Fig, 52B illustrates an overhead view of an. alternative embodiment of a footed TSSOP-8L leadframe and package.
- Fig, 52C illustrates a table comparing conventional and footed TSSOP-SL packages.
- Fig. 53Ail.lustra tes an overhead view of a conventional SGP-SL leadframe and its corresponding footed USMP equivalent
- Fig, 53 B illustrates art overhead view of an alternative embodiment of a footed SGP-8L ieadftame and package.
- Fig, 53C illustrates a table comparing conventional and footed SOP-8L packages.
- Fig, 54A illustrates an overhead view of a con ventional LQFP7x7-32L ieadframe and its corresponding footed USMP equivalent.
- Fig, 54B illustrates an overhead view of an alter native embodiments of conventional and footed LQFP7x7-32L leadfranies and packages.
- Fig. 54C illustrates a table comparing conventional and footed LQFP7x7-32L leadfraines and packages.
- the above-referenced Application No. 14/703,359 relates to inventi ve methods to make lo w profile wave-solder compatible power semiconductor packages for discrete power devices such as the DPAK and D2PAK and other custom leaded packages adapted for power integrated circuits using the same factories used today to manufacture thick, i.e. high profile, packages with thick mechanically bent leads.
- low-profile wave-solder compatible "footed" packages can be manufactured in present day factories with minimal or investment, pursuant to the following limitations:
- Leaded IC package factories producing gull wing packages such as the SOPS and the SOT23 can be adapted to produce low profile footed versions of the same packages, but cannot be used to produce leadless packages or power packages without incurring significant expense for new equipment and tooling.
- Leadless IC package factories producing leadless packages such as the DFN and QFN can be adapted to produce low profile "footed" versions of the same packages compatible with wave-soldering to replace leaded IC packages of the same footprint (leadless packages are not), but cannot be used to produce power packages without incurring significant expense for new equipment and tooling.
- Power package factories producing discrete power packages such as the DPAK and D2PAK and power IC packages such as a power SOPS can be adapted to produce low profile "footed" versions of the same packages but cannot be used to produce leaded or leadless IC packages without incurring significant expense for new equipment and tooling.
- Package-specific equipment and tooling include:
- the package disclosed herein is referred to as a "universal surface mount package” or USMP.
- a package of this invention may be fabricated from a leadframe with dual-side etching.
- Figure 7A illustrates a copper sheet 90, having a thickness of 200,u.m or 500um, used to form the USMP leadframe. Through etching, or alternatively through stamping, the copper sheet is modified into four geometric pieces, or segments.
- Copper sheet 90 is subdivided into four segments A, B, C and D.
- a mask 83 protects segments A and B but exposes . segments D and C to a backside etch, typically a. liquid acid solution for etching copper.
- a backside etch typically a. liquid acid solution for etching copper.
- copper sheet 90 is reduced in. thickness to produce cantilever section 92 while section 91 retains its full thickness.
- the entire sheet 90, including section 91 is reduced in thickness but cantilever section 92 is reduced proportionately.
- a mask 84 protects segments A and C but exposes sections B and D to a frontside etch.
- segment B in section 91 is thinned to form a foot 100B while segment D is completely cleared of all copper. If the etching occurs on only the- frontside, section 100 A in segment A and cantilever 1O0C in segment C remain unaffected. If however the etching occurs in an acid bath and the backside of the copper leadframe 90 is unprotected, all sect ions am thinned proportionally.
- Segment A comprises the full thickness of the copper sheet, i.e. 100%.
- Segment C comprises etched copper cantilever lOOC having a thickness at a fraction of the total thickness of copper sheet 90, e.g. 30%, having a top surface coplanar with the top of segment A.
- Segment B comprises etched copper having a thickness at a fraction of the total thickness of copper sheet 90, e.g. 30%, having a bottom surface coplanar with the bottom of segment A.
- Segment D comprises opening 101 D completely clear of metal.
- step 95 copper sheet 90
- step 96A mask and backside etch
- step 96B mask and frofttside etch
- step 97 solder plating of the leadframe
- Figure 8A illustrates the design parameters for etching copper sheet 90, shown in cross-sectional view 85.
- the sum of the frontside etch and backside etch must exceed 100%, preferably with a 10% overetch.
- the froni-side-etch removes 70% of the copper to form foot ⁇ .00 ⁇ while backside etch removes 70% of the copper to form cantilever lOOC.
- embodiment of the invention produces equally thick cantilever and feet sections.
- the front- side-etch removes more than the backside.
- the front-side-etch removes 70% of the copper to form foot 100B while backside etch removes 40% of the copper to form cantilever lOOC.
- This version produces a thick cantilever I00C and a thin foot 100B.
- the backside etch removes more than the front-side.
- the front- side -etch removes 40% of the copper to form foot 100B while backside etch removes 70% of the copper to form cantilever lOOC. This version produces a thin cantilever lOOC and a thick foot lOOB.
- unintended metal bridge 89 results as shown in cross-sectional view 87A of Figure 8B. If the top etch is of short duration and the backside etch is of a long duration but. together the etches do not. exceed 100% of the starting copper thickness, unintended metal bridge 89 results., as shown in cross-sectional view 87B. If the top etch is of a long duration and the backside etch is of a short duration but together the etches do not exceed 100% of the starting copper thickness, unintended metal bridge 89 results, as shown in cross-sectional view 87C.
- the process of lea.drra.me manufacture in accordance with this invention enables a variety of useful geometries to be fabricated shown in Figure 9A, including a column 100 A comprising segment A; a foot I00B comprising segment B; a cantilever lOOC comprising segment C ; a haif-T-shape 100E comprising the combination of segments A and C; an t-shape 100F comprising the combination of segments A and B; and also a Z- shape 1O0G comprising the combination of segments C, A, and B.
- FIG. 9B Other useful geometries shown in Figure 9B include an inverse T-shape 1004 comprising the combination of segments B, A, and 6; a T-shape- 100 J comprising the combination of segments C, A, and C, a U-shape lOOL, comprising the combination of segments A, B, and A; and also an inverse U-shape 100K comprising the combination of segments A, C, and A.
- geometry 10.1 M comprising columns A and intervening gap A
- geometry JOIN comprising cantilevers C and intervening gap €
- geometry 10IP comprising feet B and intervening gap B-
- geometry 101.Q comprising column A, foot B, and intervening gap AS.
- geometry 101R comprises column A, cantilever C, and intervening gap AG
- geometry 101 S comprises foot B, cantilever C, and. intervening gap &&.
- Block Molding for leaded & leedtess Packaging Another important element, of the USMP is the elimination of the need for package-specific mold cavity tools. Instead of localizing the plastic molding around each specific product, in the USMP process plastic is used to encapsulate ' all. the products .hi a common ieadframe or divided portions thereof, i.e. "block" molding. By encapsulating large blocks of a leadirame concurrently, the need for package-specific mold tools is eliminated. As a result, many products may be manufactured on a single Ieadframe concurrently from a common mold cavity tool, one shared with other package types and leadframes.
- Figure 10A illustrates an IC Ieadframe 105 designed for USMP fabrication comprising IC dice and individual leadirame patterns 106, Ieadframe rails
- Figure 10.B illustrates USMP Ieadframe 105 encapsulated by a single plastic block mold 109.
- Figure IOC illustrates USMP Ieadframe 105 and block mold 109 in cutaway view revealing multiple arrays of iC dice and individual ieadframe patterns 106 contained within.
- Figure 10D illustrates USMP ieadframe 105 covered by three distinct blocks of plastic I I OA, HOB and HOC collectively comprising a USMP segmented block mold.
- the same leadirame can be used to fabricate either footed or leadless IC packages.
- Figure 10E illustrates an USMP power discrete Ieadframe 1 11 comprising power semiconductor dice and individual Ieadframe patterns 1 12, Ieadframe rails 108, and Ieadframe cross rails 107.
- Figure 10F illustrates USMP Ieadframe 1 1 1 encapsulated by a single plastic block mold
- Figure 16G illustrates USMP ieadframe 1 1 1 and block mold 109 in cutaway view revealing multiple arrays of power semiconductor dice and individual Ieadframe patterns 1 12 contained within.
- Figure 10H illustrates USMP ieadframe 1 11 covered by three distinct blocks of plastic 1 10A, 1 JOB and 1 IOC collectively comprising a USMP segmented block mold for manufacturing power packages.
- block molding is used in leadless QFN manufacturing, except for the USMP process disclosed herein, block molding is fundamentally incompatible with leaded IC packages and power packages.
- FIG. 11A The three cross-sectional views illustrate packages for two adjacent dice, i.e. package A and package B and the intervening street: between them delineated by dashed lines, during three successive fabrication steps.
- Cross-sectional view 120 illustrates the step just after molding where plastic- 127 A and copper conductor 128 A extend between package- A and package-B through the intervening street. Plastic also fills the visible underside portion 131 A of package A and B I B of package 6
- the second drawing, cross-sectional view 121 illustrates the use of a laser beam 130A to remove the portion of plastic .127 A from the street, i.e. between the dashed lines, and in addition to remove portions of plastic 127 A .on both sides of the street, i.e. atop copper conductor .128A within package A and within, package B, while the plastic encapsulating the die is retained and remains unaffected, i.e. a plastic capsule I27B survives the process and continues encapsulating package-A, and a plastic capsule 127C survives, encapsulating package-B.
- laser 130 A is optically scanned.
- Optical scanning involves parametrically controlling the locations to be lased, adjusting the power and pulse frequency of the laser, and varying the scan rate and number of repeated laser scans performed oil a given area.
- the peak laser power needed, for plastic removal varies from 5W to 20W.
- the average laser power delivered is controlled by pulsing the laser for a prescribed duration ion at a fixed frequencyt resulting in duty factor D where D - 1TM * and where the average powered delivered Pav3 ⁇ 4 is given by Pave ⁇ P * D ⁇ P * (t* « * fpaise).
- a 20 W laser running at 20kHz pulse rate and a 50% duty factor has an on time of 25 ⁇ tsec for every 50
- the laser's wavelength is adjusted to maximize its absorption by the material being removed.
- virtually any infrared, visible light, or • ultraviolet- laser of sufficient power e.g. in the 10W to 20W range, may be used to melt and evaporate the relatively low melting point of the plastic mold compound.
- laser wavelengths attractive for selective plastic removal made in accordance with this invention include infrared gas lasers such as CO2 at 10.6pm, or infrared solid-state or fiber lasers such as Y AG at 1064nm.
- the required laser power may be reduced by rapidly and repeatedly scanning the same area with the laser, whereby the total energy Escaa delivered ⁇ one specific "slice" of plastic to be removed is equal to the average laser power Pave, described previously, times the time required to scan across the slice tscan times the number of times a given slice is scanned n «as, i.e.
- the number of scans ⁇ can be minimized, typically from 2 to 5 scans. If however a laser having a. wavelength poorly matched to the materia! being removed is used, from 10 to 30 scans may be required on each Sased slice.
- a UV or blue laser used to cut copper may require only 3 or 4 scans to remove a 200 ⁇ m copper leadframe.
- an infrared laser such as YAG or CO2 may require 10 or more scans, resulting in burn marks on the leadframe.
- the scanning rate should not be confused with the aforementioned laser pulse frequency and the laser pulse duration 3 ⁇ 4> «, which occur at rates at least one or two orders-of-magnitude faster than laser scanning, lo micromachining, laser pulses are controlled electronically in the microsecond range, while optical scanning of lasers is performed using motors and movable mirrors.
- One-dimensional scanning i.e.
- producing a outline along a straight line can be performed with a single mirror system while two-dimensional scanning requires either using a single minor rotated on two axis, or by employing two mirrors ⁇ one for deteraiinrag the x-axis position control and the other for y-axis control Mirror positioning can be accomplished using precision adjustments with stepper motors or using continuous drive rotating motors with the laser pulses occurring only when the mirrors are directed toward the area to be lased.
- the block can be cleared of plastic in 90 seconds, i.e. in 1.5 minutes. Assuming four blocks per leadframe, a total of 6 minutes are required for plastic removal. Smaller packages take longer because there are more streets to clear for any given block's area. Conversely, larger packages may be processed, in shorter times in proportion to the lower street density.
- a different laser process is optically scanned to remove copper conductor 128 A from the street, i.e. between the dashed lines.
- copper lead 128B extends under plastic capsule 127B while copper lead 128C extends under plastic capsule 127C.
- Leads .128B and 128C axe separated by the street.
- the conductive leads have the same Z shape as the aforementioned geometry 100G, As shown, plastic capsules I27B and I 27C cover the top portions of these leads but not the sidewall or feet, which are exposed. By removing metal 128 A from the street, not only are the conductive feet formed but also the packages are mechanically separated from the leadframe and from one another. Laser .130B, therefore fabricates the package feet as well as perfbrniing product singulation.
- laser DOB ideally comprises a shorter wavelength than laser 130A.
- Short wavelength lasers comprising solid-state or .fiber lasers, include yellow-orange lasers at 593 Jnm, green lasers at 532am, blue lasers at 473nm, blue- violet lasers at 405nm, or ultraviolet lasers at 37Snm, 355nm, 320nm, or 266nm. While exeimer lasers, utilizing excited diraers of noble gases such as xenon, .krypton, fluorine, and argon to realize ultraviolet wavelengths are commonly employed in semiconductor manufacturing and delicate surgeries, such precision and higher associated costs are not generally justified for package fabrication. Using the appropriate wa velength laser, throughput of metal removal and package singulation can. be even faster than plastic removal.
- laser ' BOB is replaced by mechanical sawing.
- laser BOA is still used to remove the plastic from the street and to uncover the feet, but mechanical sawing defines the length of the feet and performs singulation.
- This version of the process while able to re-use existing mechanical sawing equipment, is less accurate than the laser process, and subjects the products to greater mechanical stress during processing.
- the resulting package is inferior, having greater variability in the length of the conductive feet, and greater risk of plastic cracking.
- care must be taken to control die saw rate and to replace the saw blade frequently, or the saw may damage the metal and bend the feet.
- Figure 118 illustrates the technology can also be applied to produce leadless packages.
- laser 130A is used to remove plastic only from the street.
- plastic capsule 127B encapsulates die- A
- plastic capsule I 27C encapsulates dle-B but conductive copper 128 A is uncovered only in the street.
- plastic 1.27 A is removed only in the street by controlling the laser positioning dining scanning.
- a second laser process typically having a higher power and energy rating than laser 130A, is used to cut and remove copper conductor 128 A from the street. Because plastic removal by laser 130A and metal removal by laser BOB both have the same edge as defined as the edge of the street, then the resulting plastic and metal form a flush vertical wall at the package edge. As shown, conductive copper lead 128B is flush with plastic capsule 1278 defining the vertical edge ofdie-A, identical in cross section to a conventional sawed leadless QFN or DFN package. Similarly, conductive copper lead 128C is flush with plastic capsule 127C defining the vertical edge of die ⁇ B. Street fabrication and die singulation in the USMP process using lasers is superior to sawing in conventional QFN fabrication because of improved accuracy, reduced stress on the package plastic, reduced risk of plastic cracki ng, smoother package edges, and reduced risk of metal-to-plastic delamination.
- the USMP process is able to fabricate both footed and leadless packages in the same factory and manufacturing line with no retooling required.
- the USMP process is universal because it can make both wave-solder compatible leaded, i.e. "footed", packages as well as leadless QFN and DFN packages using a flexible block mold process, in contrast, the conventional saw or punch type QFN process can only manufacture leadless packages - packages incompatible with low cost wave-solder based PCB factories.
- the resulting shape of the feet of conductive leads 128B and 1.28C can be adjusted. For example if a square energy profile 136 of energy E versus position y shown in graph 135 is used, the resulting feet will retain a square shape. If however, a smooth-edged energy profile 138 shown in graph 137 is used, the edges of the feet ' of leads 128B and 128C will be rounded 129. facilitating easier solder wiek.bg during PCB assembly.
- the energy E is a combination of the average pulse power and the number of repetitive scans rastered across the same location.
- black plastic used in semiconductor packaging is readily absorbed by the entire spectrum of light wavelengths ranging from UV to infrared.
- Copper and other yellow metals reflect various wavelengths, poorly absorbing the impinging laser beam.
- poor laser absorption causes a large number of scans resulting in a low UPH throughput. Reflection is also dangerous, risking damage to the laser head from the reflected beam, and in badly designed equipment even posing a safety hazard to operators.
- Figure 12B illustrates the absorption spectra, i.e. a plot of absorption on the y ⁇ axis versus light wavelength on the x-axis, for a variety of common metals.
- Infrared lasers such as CCte gas laser wavelength 141 A at 10.6pm and Y AG fiber laser wavelength .141 B at i064nnvare contrasted to visible solid-state laser wavelength 141.C at 532nm and UV solid-state laser wavelength 141 D at 355nm.
- steel and iron (Fe) are easily absorbed in the infrared spectra over 1 pm.
- yellow metals including copper 140, gold, and silver absorb poorly in the infrared, with high absorption of light shorter than 600nm, i.e. in the UV and short visible spectrum.
- the USMP process can be optimized whereby
- Plastic is removed using infrared laser over 1 pm, e.g. with a Y AG fiber laser at 1064.51.01, .resulting in evaporation of plastic with minimal absorption by the underlying copper leadframe
- Metal is removed for defining package feet, singulating die, and de-junking of tie bars using a. solid state UV or visible light laser having a wavelength shorter than 600nm, e.g. a yellow-orange laser at 593.5nm, green at 532xtm, blue at 473nm, blue-violet at 405nm, or ultraviolet lasers at either 375nm, 355nm, 320nro, or 266nm.
- a. solid state UV or visible light laser having a wavelength shorter than 600nm, e.g. a yellow-orange laser at 593.5nm, green at 532xtm, blue at 473nm, blue-violet at 405nm, or ultraviolet lasers at either 375nm, 355nm, 320nro, or 266nm.
- each block is lased in succession, starting with block 11 OA processed by laser scan 143 A, secondly with block 110B processed by laser scan 143B, and lastly for block 1 IOC processed by laser scan 143C.
- different types of lasers are employed for plastic and copper removal, it is necessary to unload the processed leadframe from one laser first for plastic removal and transfer it to another for lead definition, copper removal, singulation, and tie bar de-junking. So the entire process of laser patterning each block mold in succession wilt occur twice, once for plastic removal, and a second time for metal removal.
- the size of a block is arbitrary, based on providing adequate mechanical support to the leadframe with rails and cross-rails to prevent sagging or bowing of the leadframe during manufacturing and handling. While the number of blocks may vary from 1 to any number, typically 3 to 12 blocks are sufficient to provide adequate support yet manufacture most package types with a large number of units per leadframe. If the blocks are too small, the block may not be an even increment of the package dimension, i.e. pitch, and useful leadframe area will be lost Each block may take from 1 to 15 minutes to process depending on the size of the block and the pitch of the package being fabricated. Finer pitch packages contain more streets and take more time to process. Nominally, one leadframe can be processed in 10 to 20 minutes.
- the USMP manufacturing process can be optimized by the scanning algorithm employed in street fabrication. Rastering the laser beam by rows in a manner used fay DLP movie projection and LCD TVs is an inefficient method because most of the leadframe retains plastic and does not require laser processing, instead it is preferable to process only the areas requiring lasing, for example by lasing the horizontal streets first as shown in Figure 12D, then lasing the vertical streets as illustrated in. Figure 12E.
- Leadframe 105 illustrates a footed package with 12 feet, three on a side.
- beam scan DO A removes plastic in the horizontal streets; then beam scan DOC removes the plastic in the vertical streets.
- beam scan 1 SOD removes the copper in the vertical streets.
- plastic removal beam 130 A comprises 10 separate scans 145 A through 145 J
- laser copper removal beam ' BOB comprises 7 separate scans 144.A through 144G, each comprising a laser beam having a spot size 146 of 44 ⁇ . While smaller spots are possible, spots of 20pra to 50 ⁇ are preferable to reduce the number of slices required in laser scanning. Too large a spot, size, however, is not preferred because it limits a package's feature resolution.
- the slices can overlap slightly without any adverse effect, and in feet it is preferable to have them overlap slightly. With no overlap, seven slices each 44 ⁇ wide would result in a plastic cut 308pra but the total width of copper removal beam DOB is only 300 ⁇ . Non-overlapping laser beams are problematic as residual metal and plastic and metal may survive the street fabrication process and result in defective product.
- the resulting footed package from leadframe 105 is shown in Figure 12G comprising laser-defined plastic body 1 10Z and conductive feet 147, For reference;, the locations of horizontal laser copper removal beams DOB and vertical laser copper removal beams 130D are included.
- Tie bars (exemplified by tie bar 148 in Figures 12G and 12H), extra pieces of metal used to stabilize the leadftarae and to hold the die pad in place during manufacturing naturally protrude from the package's plastic body.
- tie bars are mechanically clipped off and the extra pieces metal removed, i.e. "de-junked" during the singulation process.
- the process while applicable to the USMP is not preferred because it adds mechanical stress during the manufacturing process, requires additional equipment, and oftentimes results in a small protrusion of metal outside of the plastic potentially as shown in DPAK perspective view 45J shown in Figure 31.
- the rectilinear laser algorithm comprising horizontal and vertical slices results in an unwanted artifact, a remaining segment of tie bar 148, which forms a: copper cantilever protruding from the die pad's corners.
- This artifact can be eliminated using the same laser process by augmenting the laser scan pattern. As shown in Figure 12H augmenting the combination of horizontal laser slices 144 A through 144G to include extra slices 149A through I49D removes the tie bar 148 artifact
- this laser scan is not continuous, but lasing occurs only for a short duration so as to direct the laser beam only at the top of tie bar 148.
- tie bar removal can occur as a step that is separate from the formation of the metal feet.
- FIG. 13 A block diagram flow chart of the manufacturing process is shown in Figure 13 comprising the steps starting with a patterned leadframe (step 150) fabricated in a manner disclosed previously in this application, followed by solder or epoxy die attach (step 131), optional clip lead attach process (step 152) and wire bonding (step 154). As shown by path 153, clip-lead process (step 152) may be skipped if the semiconductor is not a high current discrete device. After wire bonding, plastic-molding (step 155) is performed using either separate mold cavities or preferably using block molding, i,e, one mold sheet
- step 159 is performed, comprising selective plastic removal using a laser (step 156), followed by laser lead definition (step 157 ⁇ and tie bar cutting (step 158), The singulated dice are then ready for a pick and place machine to perform testing and packing onto tape and real or waffle packs as required.
- Figure 14 A through Figure I 4J illustrates the concurrent fabrication of a leaded power package, specifically a fooled power package, and an 1C package comprising either a footed or lead! ess package using the same USMP process.
- a leadframe of the same thickness is used for both leaded and leadless devices, the same USMP process is capable of simultaneously fabricating these dissimilar package types on a common line simply by changing the leadframe design. No other change in processing or mechanical tooling is needed, if the leadframe thickness and plastic mold cavity thickness is changed, etch times most be adjusted accordingly.
- Figure 14 A illustrates a cross- sectional view of two copper sheets, copper sheet 170A shown as the upper illustration used for fabricating a footed power device package and, copper sheet 17GB shown as the lower illustration used for manufacturing either a leadless or footed IC package using the USMP method in accordance with this invention.
- the dotted lines identify the vertical column 100A, later used tq.fprm the package's die pad, the L-shaped geometry I00F used to form the foot to a power package ' s heat tab, the Z shaped geometry 100G used to form the packages' conductive leads and feet, and die etched geometry 101 R used to electrically separate the packages ' conductive leads from their die pads.
- the thickness of copper sheet 170 A can vary from 20 ⁇ « ⁇ to 700 ⁇ , with 500 ⁇ being a common thickness for good heat, spreading.
- the thickness of copper sheet 170B can vary from 50 ⁇ for smart card applications to 300um for power ICs, with 200 ⁇ 3 ⁇ 4 being a common thickness for most integrated circuits.
- the upper figure of Figure 14B illustrates backside etching of copper sheet .1.70A. during leadframe fabrication of a footed power package, where mask 1 71 A comprising photoresist or chemical etch resistant coating with window 172 A open to define area for copper etch ing.
- the lower figure of Figure 14B illustrates backside etching of copper sheet 170B during leaci frame fabrication of a leadiess or footed IC package, where mask 17 IB comprising photoresist or chemical etch resistant coating includes windows 172B and 172C open to define area for copper etching.
- the copper is then etched through windows 172 A, 172B and 172C using wet chemicals or dry etching as described previously.
- FIG. 14C illustrates copper sheet 170 A during leadframe fabrication of a footed power package just prior to front-side etching.
- copper sheet 170 A includes backside etched cavity 173 A resulting from the previous backside etch step, coinciding with mask window 172 A ( Figure 14B).
- mask 174 A comprising photoresist or chemical etch resistant coating including windows 175 A, 175B, and 175C.
- FIG. 14C illustrates copper sheet 1.70B during leadframe fabrication of a leadiess or footed IC package just prior to front-side etching, including backside etched cavities 173B and 173C resulting from the backside etch process corresponding to previous backside mask, features 1728 and 172C ( Figure 148).
- mask 174B comprising photoresist or chemical etch-resistant coating includes windows 175D, 175E, 175F and 175G.
- the copper is then etched through windows 175 A through 17SG using wet chemicals or dry etching as described previously. While the etching sequence is shown with backside etching-occurring before front-side etching;, the sequence may be reversed without changing- the resultant leadframe. Regardless of the sequence, the resultant leadframe is illustrated in Figure 14D in the top illustration for the footed power package, and for the bottom illustration for a leadiess of footed IC package. After front- side copper etching, mask window 175 A, 175C, 175D and I75G results in corresponding feet 183 A, 183B, 183C and 183D also connecting to other devices in the leadframe to facilitate mechanical support.
- openings 175B, 175E, and 175F merge with backside etched cavities 173A, 173B and 173 C ( Figure J.4C) to form gaps 185A, I.S5B and 185C, cantilever leads 18IA, 1 S1 B, and 18 IC, vertical columns I82A, 182B, and 182C and backside cavities 184A, 184B and 184C
- cantilever 181 A, vertical column 182A arid foot 183B form the aforementioned Z-shape geometry 100G • characteristic of an independent conductive lead electrically disconnected fr om die pad ISOA by gap 1 S5A in a footed power package made in accordance with the US MP process and design.
- semiconductor die 190A comprising a power device or power IC is attached to die pad 180 A by conducti ve epoxy or solder 191 A while semiconductor die 190B comprising an IC is attached to die pad 1 SOB through conductive or non- conductive epoxy layer 191 B.
- solder as a die attach material because the semiconductor die requires backside metal applied to the wafer ' s backside during fabrication after thinning, adding unnecessary extra cost and complexity into the semiconductor fabrication process.
- bond wire 195 A connects semiconductor die 190 A to cantilever !SIA; bond wire 195B connects semiconductor ' die 190B to cantilever 18 IB, while bond wire 195C connects semiconductor die 190B to cantilever 181 C.
- Other bond wires connect to other conductive leads and feet but are not visible in this particular cross section. While, as shown, more than one bond wire may be attached to the same surface of a semiconductor, the electrical potential, signal or e lectrode contacted by the bond wire may be the same or may he distinct and different, in the case of power devices -conducting very ' high current, - ' bond wires may be replaced by a copper clip lead as described previously.
- the leadframe is molded with plastic 196 A and I96B.
- the plastic may be molded around each separate die -or preferably using one to five large blocks of plastic containing more than one product per block. Depending on the product's die and package size, the number of products fabricated from one common block moid could range from a few units to thousands.
- the plastic covers the entire block including the street and die edges atop feet I SA, 183V, 183C and 183D as well as filling backside cavities 184A, I84B, and 184C and gaps 185 A, 185B, and 185C.
- the thickness of the plastic must also be sufficiently thick to folly cover and encapsulate any bond wires 195A, 195B and 19SC or any copper clip leads.
- the step of laser plastic removal shown in Figure 14H laser beam 198 A is scanned to selectively remove portions of plastic 196A and 196B.
- the plastic is removed over metal sections atop feet 183 A and 183B, over a portion of die pad 180A herein referred to as heat tab 180C, and exposing a small portion of vertical column 182A.
- the plastic is removed over metal sections atop feet 183 A and 183B, the removal area extending onto and exposing a small portion of vertical columns 1S2.B and 182C.
- the laser and not the mold cavity tool define the lateral dimensions of the package plastic.
- a single block mold can be used to fabricate a range of products comprising IC packages at 2x2mm, 3x3mm, 6x6mm, 2x3.mm, 3x5mm or any package shape with leads on two or more sides, or to produce discrete transistor and power packages such as the SOT23, DPAK, and D2PAK.
- the step of laser plastic removal can be skipped or used to augment the design after molding for purposes of package customization.
- the same laser settings can be used for fabricating both IC and power packages, if, however, the power device has thicker plastic than the IC package, then the power setti ng for laser pl astic removal of the power package must be increased accordingly.
- laser beam 199 A is used to remove metal feet 183 A, 183 B, 183C and 1830 from the street and to form wave-solder compatible feet of controlled lateral length and shape.
- the length of foot 1 S3F and others is defined by laser beam 199A.
- foot 183B extending from heat tab 180C is defined by the same laser beam 199A.
- laser beam 199A is used to remove all metal from the street and to define the length of feet 183G arid 1 S3H.
- feet 183E and 183F is the same as the thickness of feet 183G and 183H, the same laser settings can be used for fabricating both IC and power packages. If, however, the power device has thicker metal feet than the IC package, then the power setting for the laser cutting of the metal feet in the power package most be increased accordingly.
- a leaded or leadless package is determined by the relative position of the lasers for plastic removal and metal definition. For example if the width of the cut made by laser beam 199 A is smaller than the width of the cut made by laser beam 198 A, then a footed package will result whereby metal feet extend laterally beyond the plastic edge, if, however, the edges of the respecti ve cuts made by laser beams 198 A and 199 A are- aligned, the pla stic and metal will exhibit a vertically aligned flush sidewal! with no metal protrusions. In this manner, the lower illustration shown in figure 141 can be converted from a footed package Into a leadless package simply by changing the scanning locations of laser beams 198 A and 199 A, as shown in Figure 14 J.
- USMP Packages The universal surface mount package technology and process disclosed herein facilitates a flexible and diverse range of package types comprising both leadless and footed packages including footed 1C packages, footed power IC packages, and footed discrete power packages.
- Footed USMP IC packages and footed USMP power IC packages share the common feature of having multiple electrical connections or "feet" but differ in the fact that the semiconductor die contained in an IC package normally comprises analog, digital, memory, or microcontroller functions that generally do not carry high current or dissipate substantial amounts of power while power IC packages contain semiconductor dice that do.
- Po was IC semiconductor dice include analog and / or digi tal control circuitry combined with arrays of one or more high-voltage or high-current switches, voltage regulators, switching power supplies, current limiters, motor drivers, solenoid drivers, lamp and LED dri vers, and other interface products. While in some cases, the tooted USMP IC packages may be used for both power and non-power applications, in. other cases, power IC specific U SM P packages may also he reali zed by any of a variety of techniques including;
- Discrete power devices require the same low thermal and electrical resistance as power ICs and employ the same techniques as described above, except the power discrete devices generally conduct higher currents and lower electrical resistances than their power IC counterparts, achieved using clip leads, larger diameter bond wires, or a greater number of bond wires.
- Discrete transistor and power packages generally require 2 to 7 electrical connections, with three connections being the most broadly applicable, i.e. with a low current gate or input signal, ' a high current source or cathode connection connected through bond wires or clip leads, and a drain or anode connection made through the electrically conductive die pad that also serves as a heat sink.
- the USMP process and technology disclosed herein is also capable of fabricating leaded packages either for thru- hole or surface mount assembly.
- the major difference between a footed package and a leaded package fabricated with the USMP process is best illustrated through cross sectional views of various types of USMP packages.
- the cross sections shown i « Figure ISA through Figure 15F represent a cutHne from any package edge having leads, feet or connections, through the package to the opposing edge.
- Figure ISA contrasts a footed and leadless USMP fabricated package, each having a lateral length on a PCB extending from Y0 to Y10.
- Footed package 220 A and leadless package 220B include conductive feet 1S3G and 183H comprising segments B, vertical columns 182B and 182C comprising segments A, cantilevers 181 B and 1.81 C comprising segments C, exposed die pad 180B comprising segment A, and an intervening gap AG between segment A and segments C, Semiconductor die 19GB sits atop exposed die pad I SOB, attached by intervening die attach 191 B.
- Bond wire J.95B electrically attaches to an electrode on a portion of the surface of semiconductor die 190B and connects through cantilever 181 B to foot 183G.
- Bond wire 195C electrically attaches to another electrode on a portion of the surface of semiconductor die 19GB and connects through cantilever 18 ⁇ C to foot 183E.
- segments A and B are intrinsically coplanar being constructed from a common piece of copper.
- the tops of segments A and C are intrinsically coplanar being constructed from a common piece of copper.
- segment D is clear of all plastic and metal.
- laser-defined plastic 196E extends laterally from street to street, i.e.
- both footed package 220A and leadless package 220B are fabricated identically except the laser used to remove the plastic defines the lateral extent of plastic 196 ⁇ in footed package 220A between. Y 2 and Y8 while the lateral extent of plastic 196E in leadless package 220B remains undisturbed between Y0 and Y10.
- Figure ⁇ 5 ⁇ illustrates two variants of leadless and footed US MP packages made in accordance with this invention.
- plastic 196F extends from Yl to Y9 extending atop feet 183G and ⁇ 83 ⁇ and completely encapsulating vertical columns 182B and 182C.
- leadless package 22013 the foot previously comprising segments B is replaced by vertical columns 182D and 182E comprising segments A.
- Figure 15C illustrates a footed USMP package 220E and a leadless package 220F comprising isolated die pads made in accordance with this invention, specifically where die pad 1 S I D comprises segment C encapsulated on all sides by plastic I96D or 196E.
- FIG. 15D illustrates two variants of power USMP packages made in
- a semiconductor die 190 A comprises a power device mounted atop an exposed die pad 180A encapsulated by plastic I 96C, with a conductive die attach 191 A.
- Bond wire 195 A electrically connects surface metallization of semiconductor die 190A to cantilever 181 A and through vertical column 182A to foot ⁇ 83 ⁇ .
- Exposed die pad 180A and heat, tab JSOC, along with foot 183.1, provide both electrical and thermal conduction.
- Plastic 196C extends laterally from Y3 to Y9, with plastic between Y0 and Y3 removed from heat tab 18.0C to improve convectt ve cooling .
- power package 220H includes semiconductor die 190A. 'mounted atop an isolated die pad 181 E in segment C and encapsulated by plastic 196C. Thermal energy flows laterally through isolated die pad 18 IE to exposed die pad 18 IF and through vertical column 182F into foot 1S3H. In this manner heat is removed by convection from the surface of heat tab 181 F and by thermal conduction into the PCB through foot IS3K,
- FIG. 1 illustrates one implementation of a leaded package where cantilever 18 I H . protrudes from plastic 196C for an extended length from Y9 to Y20.
- the backside mask layer has an opening that extends throughout section C whereas the topside mask layer extends throughout section €, the result being that the metal sheet is etched only from the backside in section C.
- cantilever 181H is not copianar with the bottom of die pad 180 A, heat tab 180C, or heat tab foot .183 j.
- USMP process can be employed to produce leaded packages such as the TO- 220, but without requiring mechanical punching, eliminating all mechanical stress.
- the USMP process can also be used to replace gull wing packages while completely eliminating the need for imprecise mechanical lead bending.
- An example of a USM P replacement of a gull wing power package 220K. is shown in. Figure 1SF, where cantilever 181 L extends beyond plastic 196C from Y9 to Yl T Beyond YI 1 , vertical column 1 SOL comprising segment A connects to a foot 183L extending to ⁇ 2.
- the length of cantilever from Y9 to Y l 1 is not constrained by the need to secure a clamp for mechanical lead bending.
- foot 183L is intrinsically copianar with the bottom of die pad 108A and foot 183 J because they are constructed from the same piece of copper without any mechanical bending or punching. No conventional lead bending process can guarantee coplaaarit)'. While in the embodiment shown a heat tab- 180C is located on one edge of the package and lead 1.81L on the other side, leads may be present on two, three, or 'four sides of the package, with our without the heat tab as desired.
- FIG. 16 illustrates cross- section views taken at several outlines parallel, to the package sides and perpendicular to the conductive leads.
- the perspective drawing illustrates the locations of the various cross sections shown, where die pad. 209 is spaced apart from cantilevers 205 A and 205B by a space 208 comprising gaps A£.
- Cantilevers 205 A. and 205B comprising segments C connect to vertical columns 203A and 203B comprising segments A which in turn connect to feet 20.1 A. and 201 B, which are spaced apart laterally by air gap 202.
- Vertical surface 210 defines the lateral extent of the package's plastic, where everything ro front of vertical surface 210 is exposed and everything behind it is encapsulated.
- Cross section Yl-Y f illustrates the cistline through feet 201 A and 20.1 B separated by air gap 202.
- cross section Y2-Y2' illustrates the outline through vertical columns 203A and 203 B separated by plastic 204 202
- cross section Y3-Y3' illustrates the outline through cantilevers 205 A and 205B separated by plastic 204
- cross section Y4-Y4' illustrates only plastic 204 is present.
- US MP Package Features Using the USMP fabrication sequence disclosed herein a wide variety of packages types and diverse package features can be fabricated. While the internal construction of USMP packages may vary, the external package features relevant to PC ' S assembly fabricated by the ' USMP process can be identified and grouped into several, large taxonomies, namely
- Figure 17 A illustrates perspective, lengthwise, side, and bottom views of a footed surface mount package with exposed sidewalls.
- plastic package 251 includes at least one conductive foot 252 protruding from the package body coplanar with the bottom of the package.
- This foot comprising copper plated with a soklerable metal such as tin, silver, palladium, nickel, etc. is used for soldering the package to a PCB and is compatible with both wave-soldering and solder reflow assembly.
- solder is applied from above after die package is affixed or glued to the PCB.
- the solder in molten form coats the package and PCB but adheres only to the metal surfaces, i.e. to the exposed foot 252 and possibly also to the exposed sidewall 253.
- no solder is applied beneath foot 252 prior to the component's placement. The resulting solder is easily verifiable using automatic optical inspection methods to confirm a proper solder attachment has been achieved.
- the footed package shown in Figure 17A is also compatible with solder reflow assembly processes.
- solder reflow assembly solder is coated onto the PCB prior to component placement and melted into place. The package is then placed atop the hardened solder and held in place on the PCB using glue or mechanical support while the PCB is fed through a furnace or oven, typically on a slow moving conveyor belt The oven's temperature is chosen to be sufficiently high to re-melt the solder on the PCB as the PCB passes through it. The melted solder then flows in liquid form adhering to the package's conductive 252 foot and possibly wetting onto the sides of the foot by the action of surface tension.
- solder assembly is slower and involves more expensive production equipment than wave-solder assembly.
- wave-solder assembly requires x-ray inspection to confirm soldering quality.
- the footed IJSMP package is unique in that it is both wave-solder and solder reflow compatible. Specifically the package is wave-solder compatible because the solder easily flows onto foot 253 and partially onto vertical sidewall 253. As shown in the bottom view however, it is evident that feet 252 comprise a conductor larger than that protruding beyond plastic 251. This large metal, pad exposed on the package's underside, having a. total metal area equal to or greater than today's leadless packages such as the QFN or DFN , provides sufficient area for reliable solder reflow attachment. With proper PCB design, solder during reflow can also redistribute itself via surface tension up onto the top and sides of foot 252, facilitating optical, inspection even in solder-reflow assembly lines.
- Figure 17B illustrates perspective, length wi se, side, and bottom views of a footed surface mount package with non-exposed vertical sidewalls.
- plastic package 26.1 includes at least one conducti ve foot 262 protruding from the package body coplanar with the bottom of the package but does not include a metallic vertical sidewail for solder to wet onto.
- this v ariant of the footed package may be assembled onto a PCB using either wave-soldering or solder reflow.
- the vertical conductive sidewail is beneficial or not is a matter of preference for the particular PCB assembly house. Eliminating the vertical conductive sidewail may reduce the risk of unintended shorts between the package's feet and any exposed tie bars but with proper design rules, the risk can completely mitigated.
- the advantage of an exposed vertical sidewail is that it provides additional area for soldering and is easily confirmed by optical inspection, but proper processing of the foot-only package can reliably produce tire same performance. So in essence, there is no difference between the two versions of the footed package. Throughout the remainder of the application the footed package illustrations will depict packages with exposed vertical sidewalls, but it should be understood that non-exposed sidewail version may be substituted as desired.
- Figure 17C illustrates -perspective, lengthwise, side, and bottom views of a leadless surface mount package.
- plastic package 271 has no conductive foot or lead protruding from the package body and no metal for solder to reliably attach onto.
- the vertical conductive sidewail 273, while solderab!e is not adequate to insure solderability using wave-solder assembly. So iralike the previously described footed packages, this variant of the US MP package can only be assembled onto a PCB using solder reflow.
- the USMP process is capabl e of making exact duplicates of existing leadless packages such as - the QFN and DFN using the same USMP fabrication sequence capable of making wave-sol derabie footed packages and even capable of fabricating through-hole leaded packages, hence die package's moniker "universal”.
- a -Variation of the IJSMP fabricated leadless package is shown in perspective, lengthwise, side, and bottom views in Figure 17B.
- the leadless landing pad comprises only a foot 277 rather than an entire conductive column so that the exposed vertical sidewail is replaced by the vertical sidewali. of foot 277 contained entirely within the plastic 27.1 except for its sidewail and underside edges.
- foot 279 is inset from plastic body 271 edge, and no metal appears on the package sidewali as depicted in perspective drawing 278.
- FIG. 18A An example of a leaded package manufactured using the USMP process is illustrated in Figure 18A including perspective s lengthwise, side, and bottom views. While the package is fabricated using the USMP process designed for making surface mount packages, the package shown in perspective view 280 is a leaded package designed for through-hole PCB assembly, not for surface mounting. As such lead 286 protrudes from package body 281 , near the center of the plastic package's body and not coplanar with the bottom of the package. The shadow or optica! "projection" 287 of lead 286 onto the plane defined by the bottom of plastic 281 is sho wn to clari fy the three dimensional location of the lead.
- the USMP process can be used to fabricate "leaded surface mount packages” similar in shape to gull wing packages but without any need for lead bending.
- This type of package is illustrated in the perspective drawing 290 of Figure I8B comprising metal lead 296 protruding from plastic body 291 and intersecting with vertical column 293 connected to foot 292. Foot 292 is precisely coplanar with the bottom of the package and plastic 291 because no bending is involved in fabrieatmg the lead.
- the shadow or optical "projection" 297 of lead. 296 onto the same plane as the bottom of plastic 291 and foot 292 is shown to clarify the three dimensional location of the lead elements.
- the USMP process is also capable of fabricating heat tabs used in power packaging.
- thick metal heat tab 303 protrudes from plastic 301 to facilitate enhanced thermal conduction into the PCB and enhanced convection into the air.
- thick metal heat tab 303 is attached to foot 302 to provide wave-solder compatibility, a feature conventionally fabricated heat tabs do not offer.
- Foot. 302 may be located along one edge of heat tab 303 as shown, or may circumscribe the beat tab 303 along its periphery in. its entirety or in a portion thereof.
- the visible elements of the various packages that may be fabricated using the USMP process comprise the geometric elements described previously in Figure 9A through Figure 90. Specifically, in footed packages only the foot protrudes beyond the package plastic, in leaded packages the cantilever protrudes from the plastic, in power packages the entire vertical column protrudes beyond the package body, while in leadiess packages no metal substantially extends beyond the plastic 's exterior edge.
- Figure 19A comprises cross-sectional views of exposed and isolated die pad USMP leadframes m .the lengthwise package direction, specifically along a cntiine through a die-pad-eomiecied foot and an isolated foot.
- the leadframe cross-sectional views are "asymmetric" with respect to an imaginary center line because the leadframe features are not mirror images on opposite sides of the package's center, i.e. the left side and right sides are different..
- Cross-sectional view 340A representing outline A-A' illustrates an exposed die pad package where die pad 351 A connects to foot 352 A on one side while cantilever 353A, vertical column 354A and foot 352B form a Z ⁇ shaped conductor and foot not connected electrically to die pad 35 ⁇ A.
- Plastic envelopes the -leadframe and semiconductor die (not: shown) including a. top portion- 350A and a. lower portion 3 SOB to realize a void-free homogeneous eneapsuiant
- the lower edge of plastic 3 SOB is coplanar with die bottom of feet 352A and 352B, vertical column 354 A, and exposed die pad 351 A.
- cross section 340C- representing outline C-C exposed die pad 351 A is replaced by isolated die pad 353A comprising a cantilever portion of the leadframe.
- Figure 19B comprises cross-sectional views of exposed and isolated die pad USMP leadframes, specifically along a symmetric cutiine through die pads and tie bars.
- exposed die pad 351 A includes tie bars 353C and 353D comprising cantilever portions of the leadframe, surrounding by plastic 350A and 3506.
- the lateral edges of tie fears 353C and 353D do not protrude beyond the edge of the plastic package body.
- the lower edge of plastic 350B is copianar with the bottom exposed die pad 351 A.
- isolated die pad 353E comprises a cantilever portion of the leadframe throughout the plastic body. Because the isolated die pad merges with the tie bars, they are indistinguishable in this cross section.
- Figure 19C comprises cross-sectional views of exposed and isolated die pad USMP leadframes, specifically along a symmetric cutiine through die-pad-eonneeied feet.
- exposed die pad 351 A connects to feet ' 352 A and 352B on opposing sides of the package and is encapsulated on i ts top surface by plastic 350A.
- cross section 340F representing cutiine F-F' isolated die pad 353F connects to feet 352A and 352B on opposing sides of the package and is
- plastic 350 A above and 350B below are examples of plastics 350 A above and 350B below.
- Figure 19D comprises cross-sectional views of exposed die pad USMP leadframes for power packaging, specifically representing a cutiine through a heat tab and feet.
- cross section 3406 representing cutiine G ⁇ Q' exposed die pad 351 A extends beyond encapsulating plastic 350A to form heat tab 355.
- Foot 352A is connected to heat tab 355 to facilitate wave-solder 'capability .
- cantilever 353 A, vertical column 354A and foot 352B form a Z-shaped conductor and foot not connected electrically to die pad 351 A.
- Plastic envelopes the leadframe and semiconductor die (not shown) including a top portion 350A and a lower portion 3 SOB to realize & void-free homogeneous encapsulant.
- FIG. 34011 representing cutiine H-Pf exposed die pad 351 A connects to cantilever 353G, vertical column 354B and foot 352B.
- Cantilever 353G sits atop plastic 350B.
- the bottom edge of plastic 350B is copianar with the bottom edge of feet 352 A and 352B, exposed die pad 351 A, and heat tab 355.
- Figure J 9E comprises a cross-sectional view -of an exposed die pad USMP leadframes along a cuttme through a heat tab and tie bar.
- cross section 3401 representing cutiine J -J' exposed die pad 351 A connects to heat tab 355 and foot 352 A while on the opposing edge cantilever 353 D sitting atop plastic 3 SOB extends laterally to the edge of plastic 350A and 350B.
- Figure 19F comprises cross-sectional v iews of exposed and isolated die pad USMP leadframes along a symmetric eiitline through feet not connected to the die pad.
- a Z-shaped conductor and foot comprising cantilever 353A, vertical column 3S4A, and foot 352A is located adjacent to, but electrically isolated from, exposed die pad 351 A.
- the package's opposing edge includes another electrically isolated Z-shaped conductor and foot comprising cantilever 353B, vertical column 354B and foot 352B.
- Plastic envelopes the leadframe and semiconductor die (not shown) including a top portion 350A and a lower portion 350B to realize a void free homogeneous encapsulant.
- the bottom edge of plastic 350B is coplanar with the bottom edge of feet 352 A and 3528* and with isolated die pad 353 H comprises a cantilever surrounded on all sides by plastic 350A and 350B. As such die pad 353H is electrically isolated from the package's ' backside and from any adjacent feet.
- Figure 19G comprises cross-sectional vie ws of exposed and isolated die pad USMP leadframes, specifically made along a symmetric outline through die pads not transecting feet or tie bars.
- cross section 340M representing cutiine M-M' illustrates exposed die pad 351 A surrounded by plastic 350A and 350B while cross section 340M representing cutiine N-N' illustrates isolated die pad 3531-1 surrounded by plastic 350A and 350B.
- Figure 19H comprises cross-sectional views of exposed die pad USMP leadframes along a symmetric cutiine through dual die pads with and without tie bars.
- Cross section 340Q representing cutiine Q-Q' illustrates two die pads, specifically exposed die pads 351 A and 35.1 B surrounded by plastic 350A and 35GB.
- cross section 340P representing cutiine P-P' the two die pads connect to cantilever tie bars extending to the edge of the plastic body, specifically w here exposed die pad 351 A connects to tie bar 353C and where die pad 135.1 B connects to tie bar 353D.
- Figure 191 comprises cross sectional, views of isolated die pad US MP leadframes along a symmetric cutline through dual die pads with and without tie bars.
- Cross section 340S representing cutline S-S' illustrates two die pads, specifically isolated die pads 353J and 353 K surrounded by plastic 3S0A and 3 SOB.
- cross section 340R representing outline R-R' the two die pads connect to cantilever tie bars extending to the edge of the plastic body, but because the cantilever tie and isolated die pad are formed from the same .cantilever, they are indistinguishable .in the drawing..
- Fig, 193 comprises cross sectional vi ews of mixed, isolated and expos ed die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
- Cross section 340U representing cutline U-U' illustrates two die pads, specifically exposed die pad 351 A and isolated die pad 353K surrounded by plastic 350A and 3 SOB.
- 340T representing cutline T-T' the two die pads connect to tie bars extending the edge of the plastic body.
- exposed die pad 35.1 A connects to tie bar 353C comprising a cantilever
- isolated die pad 353K similarly connects to a cantilever tie bar bin since the die pad is formed from the same cantilever, the isolated die pad and tie bar are indistinguishable in the drawing.
- Figure ⁇ 9 ⁇ comprises cross sectional view 340V of a dual isolated die pad USMP leadframe, specifically depicting symmetric cutline V-V through isolated dual die pads 353L and 353M, corresponding vertical columns 354A and 354B, and
- Figure 19L illustrates a cross sectional and bottom view a Z-shaped conductor and foot not connected to a die pad composing a cantilever portion 353A used for wire bonding, a vertical column 354.4, and a foot 352B. From both bottom and cross sectional views the exposed metal on the backside of the pac kage inc ludes a portion overlapping plastic 350A and another portion protruding beyond the plastic's edge.
- the Z-shaped conductor and foot will be represented as a shaded foot depicting that portion of the connection, viewable from the package's underside and a thin line extension representing the cantilever portion located inside plastic 350A and not disceraable from the package's exterior, not visible from the package's- underside, except through the use of X-ray inspection.
- the length of the dotted portion is subsequent illustrations may not be to scale but is included simply to remind the reader that the foot is part of a square Z-shaped conductor.
- Dual USMP Footed Packages depict a variety of dual-sided package constructions that can be .fabricated with the USMP process and methods disclosed herein.
- a dual package is a package where leads or feet are present on opposing sides of the package. Dual packages may be square or rectangular. In a rectangular pac kage, the longer di mension is referred to as the length wi se direction of the package whether it has connections, i.e. leads or feet, on those edges or orthogonal to those edges.
- the drawings generally include a perspective illustration of the package and two underside illustrations - one using an exposed die pad, the other comprising an isolated version of the same package. In most cases the perspective view is identical for both the exposed die pad and isolated versions.
- any footed dual-sided package can be converted into a dual leadless package, i.e. a DFN equivalent footprint having no feet extending beyond the plastic body's edges, simply by aligning the laser cuts for the metal removal to the same regions and edges used to define plastic removal.
- a dual leadless package i.e. a DFN equivalent footprint having no feet extending beyond the plastic body's edges
- Figure 20A through Figure 31 illustrate the extremely diverse range of single-die and multi-die packages that can be fabricated using USMP methods and apparatus disclosed herein as depicted by topside, underside, and in some cases by perspecti ve views.
- the labeled cross-sectional views correspond to the similarly labeled detailed cross-sectional constructions shown in Figure 19A through Figure I9G (i.e., cutlines A- A'. B- ⁇ '... ⁇ - ⁇ '), and tor the multi-die-pad.
- Figure 20A comprises various views of smgle-die-pad 2-footed USMP 370 compatible shown with either isolated or exposed die pads.
- packages are useful for packaging devices with two electrical connections such as semiconductor diodes including PN, zener, and Schottky diodes, transient voltage suppressors, voltage clamps, cm-rent limiters, and other two-terminal devices.
- the footed package as shown comprises plastic 371, foot 372, and wide foot 373. Tie bars 374 and the package feet connect to the leadframe matrix, holding the package securely in place during
- exposed die pad 376 is connected to wide foot 373 as depicted along cutfine A-A f and illustrated previously in Figure 19 A.
- a cross section of the tie bar connection perpendicular to outline A ⁇ A' is depicted along cutlme B-B f corresponding to the cross-sectional view shown previously in Figure 19B, •
- wide foot 373 is connected to isolated die pad 377 as depicted along ciiilme C-C and along tie bar cutline D-D' corresponding to the cross-sectional views shown previously in Figure 19A and in Figure 19B respectively.
- thermal resistance of the isolated package of the isolated die pad package is not as low as die exposed die pad version, substantial heat: conduction flows through the cantilever die pad, down to die-pad connected foot, and into the PCB.
- a -Variant of the previous single-die-pad 2-footed USMP 380 is illustrated in Figure 2 ⁇ where the second isolated foot 382 is made as wide as the die pad connected foot 383. The cross sections are identical, to the previous illustration.
- Figure 20C further expands the maximum die size of the package by extending the die pad connected foot onto three sides of the package, eliminating the tie bar by the three-side foot design. For example, in the exposed die-pad version shown in the lower left illustration, exposed die pad 396 connects to foot 393 on three sides.
- the size of the aforementioned USMP footed pac kages with two electrical connections can he adj usted based on the current rating and die size of the product being packaged. For large area die conducting higher currents, multiple bond wires, flip chip assembly, or copper clip leads may be used to connect the die's topside to the other connection. For devices expected to dissipate substantial heat, the exposed die pad version -is preferred because of its lower thermal resistance and better heat spreading capability.
- Figure 21 A comprises various views of single die pad 3-fboted USMP 410 compatible with either isolated or exposed die pads.
- Such packages are useful for packaging devices with three electrical connections such as bipolar transistors, small signal MOSFETs, JFETs, power MOSFETs, high-voltage MOSFETs, three-terminal voltage regulator 3 Cs 5 low-dropout linear voltage regulators or LDOs, and shunt regulators, or any three terminal device ' provided it does not exhibit excessive heat generation.
- High power devices such as thyristors and IGBTs generally require a power package with a heat tab and are therefore not candidates for using this particular class of footed USMPs.
- the footed package as shown comprises plastic 41 1, feet 412A and 412B, and wide foot 413, Tie bars 414 and the package feet connect to the ieadframe matrix, holding the package securely in place during manufacturing.
- exposed die pad 416 is connected to wide foot 413 as depicted along outline A-A' and shown previously in Figure 19A.
- a cross section of the tie bar connection perpendicular to outline A ⁇ A f is depicted along outline B ⁇ B' as shown previously in Figure 19B, Similarly, in the illustration in the lower right, to maximize the die size, wide foot 413 is connected to isolated die pad 417 as depicted along outline C-C and shown previously in Figure 19A and along tie bar outline D-D' as shown previously in Figure 19B. While the thermal resistance of the isolated die pad package is not as low as the exposed die pad version, substantial heat conduction flows through the cantilever die pad. down to the die-pad connected foot, and into the PCB.
- An improved thermal performance can be achieved using a three-sided foot shown for USMP 420 in Figure 21 B, As shown, the maximum die size of the package is enlarged by extending the die pad to the package edge, eliminating the tie bar, and connecting the die pad to a foot on three sides of the package. For exampl e in the exposed die-pad version shown in the lower left illustration, exposed die pad 426 connects to foot 423 on three sides.
- the width of the die pad 426 along cutline E ⁇ E' depicted in Figure 19C is greater, i.e. wider.
- the isolated die pad version of the same package is illustrated in the lower right drawing where three- sided foot 423 connects to isolated die pad 427.
- the width of the die pad 427 along cutline F-F' depicted in Figure 19C is greater, i.e. wider.
- a heat tab is required to further improve thermal conduction and cotr.vecti.ve cooling.
- Figure 21C illustrates 3-footed single die pad power USMP 430 with heat tab 438.
- the package includes tour feet, namely 432A. 432B, 432C and 433: exposed die pad 436 with heat tab 438 and tie bar 434.
- center foot 432B is electrically shorted to exposed die pad as illustrated along outline H-H f as depicted by the
- Feet 432 A and 432C are electrically isolated from exposed die pad 436 as depicted along cutiine.
- G ⁇ G * as depicted by the corresponding cross section shown previously in Figure 19 ⁇ , with one terminal commonly employed as a gate signal and the other for a high current connection, e.g. the source connection of a power MOSFET.
- cantilever 439C connected to foot 442C is wider than its corresponding foot.
- cantilever 439A is wider than its corresponding foot 432A.
- One unique feature of footed USMP power packages as disclosed is the addition of heat tab connected loot 433, enabling wave-solder assembly of a DPAK.
- the center foot may be replaced by tie bar 444B along cutiine J -J' as depicted by the corresponding cross section shown previously in Figure 19E.
- FIG. 22A illustrates a single die pad 4-footed USMP 500 comprising plastic body 501, feet 502A through 502D, and tie bar 504,
- the Footed package may be realized using an exposed die pad 506 as depicted along widthwise cutiine K-K' and lengthwise outlines B- B' and M-M' as depicted by the corresponding cross-sectional views shown previously in Figure 19F, Figure I9B, and Figure 19G respectively.
- the footed package may also be realized using a single isolated die pad 507 as depicted along widthwise cutiine L ⁇ L' and lengthwise eut!ines D ⁇ D' and N ⁇ N' as depicted by the corresponding cross-sectional views shown previously in Figure 19F, Figure 19B, and Figure 19G respectively.
- the term 'length refers to whichever direction is longer but should not be construed to limit the package's construction flexibility on the orientation of the leadframe relative to the plastic's shape, or the number of feet on the package ' s longer or shorter edges so long that the design rales of the minimum foot-to-foot spac ing and foot to corner spacing are maintained.
- the allowed foot-to-foot spacing i.e. the pitch from the center of one foot to its neighbor, varies depending on the capabilities of the PCB factory mounting the USMP rather than on its fabrication.
- Inter-feet pitches may vary as required, generally adopting industry standard lead pitch values used in today's gull wing leaded packages.
- Common center-to-center pitch dimensions may include 0,2mm, 0.35mni ⁇ 0.4mm, 0.45mm, 0.5mm, 0.8mm, LOrnni, 1 ,27mm, and 1.5mm.
- a larger dimension may be achieved, not by introducing a new pitch, but by omitting one foot from the package while maintaining a standard pitch dimension for the remainder of the package's feet.
- a USMP fabricated footed package with a standard foot pitch of 0.45mm can be achieve a 0.9mm pitch by omitting one foot from the package.
- Figure 22B illustrates a single die pad 6-footed USMP 510 comprising plastic body 51 1 , feet 512 A through 512F, and tie bar 514.
- the footed package may be realized using an exposed die pad 516 as depicted along widthwise outline K-K' and lengthwise outlines B-B' and M-M' as depicted by the corresponding cross-sectional views shown previously in Figure I9F.
- Figure 19B, and Figure 19G respectively or with an isolated die pad 517 as depicted along widthwise outline L-L' and lengthwise cutiines D-D' and N ⁇ N' also shown in the same referenced figures.
- Fig. 22C illustrates underside views of various single die pad USMPs with exposed die pads.
- An 8-footed package may be realized as shown comprising exposed die pad 526 as depicted along widthwise outline K-K' and lengthwise cutiines B-B' and M- M f as depicted by the corresponding cross sections shown previously in Figure 19F, Figure 19B, and Figure 19G respectively, with feet 522 A through 522H, or similarly in a 1.2-footed package comprising exposed die pad 536 with, feet 532A through 532H, or a 18-footed package comprising exposed die pad 546 with feet 542 A through 542R.
- tie bars 544 A. and 544B In the latter case where die pad widens in proportion to the package's length, more than one tie bar may be employed, e.g. tie bars 544 A. and 544B.
- Fig, 220 illustrates underside views of various USMPs with isolated die pads.
- An 8-footed package may be realized as shown comprising isolated die pad 557 as depicted widthwise along cutline L-L' and lengthwise along outlines D-D' and N-N" as depicted by the corresponding cross sections shown previously in Figure J9F, Figure 19B, and Figure 19G respectively, with feet 552A through 552H, or similarly in a 12-footed package comprising isolated die pad 567 with feet 562 A through 562 H, or a 18 ⁇ footed package comprising isolated die pad 577 with feet 572 A through 572SL
- more than one tie bar may be employed to stabilize wide die pads, e.g. tie bars 574A and 574B.
- FIG. 23A illustrates underside views of 16-footed USMPs with single and dual exposed die pads.
- the single die pad drawing shown on the left comprises an exposed die pad 606 with feet 602A through 602P.
- the feet are not connected to the die pad.
- Lengthwise construction is shown along outline B- B' through tie bars 604A and 604B and along outline M ⁇ M ? transecting only exposed die pad 606 and plastic 601 consistent with the corresponding cross sections shown previously in Figure 19B and Figure 19G respectively.
- the dual die pad version shown on the right side of Figure 23A comprises 'two die pads, namely exposed die pad 616 A held in place by tie bar 614A and exposed die pad 616B held in place by tie bar 614B. Lengthwise construction is shown along outline P-P' through tie bars 614 A and 614B and along cutline Q-Q f transecting only exposed die pad 606 and plastic 601 consistent with the corresponding cross sections both shown previously in Figure 19H. While exposed die pads can be mechanically supported from underneath during wire bonding, the center most ends of die pads 616A and 616B have no tie bar connections and are prone to move during manufacturing, especially during molding.
- the die pads can be connected to any one of the feet, either by a vertical column or by a cantilever.
- Various combinations of die pad connected feet are sho wn in subsequen t drawings.
- exposed die pad 626A is held in place by tie bar 624 and die pad connected lead 622F.
- Exposed die pad 626B is held in place by tie bar 624B and die pad connected feet 622B > 622C and 622 ⁇ , also serving as an electrical connection and a thermal path.
- Die pad connected feet may also be employed for USMP fabricated multi-pin packages with isolated pads, except that extra care must be taken in leadframe design to insure stability during wire bonding and during molding. Examples of .16-footed USMPs with dual isolated die pads are shown in the underside views of Figure 23C, In the left side illustration isolated die pad 647A is stabilized by tie bar 644A and 644B and by die pad connected feet 642E, 642F, and 642G.
- the feet connect to die pad 647 A with corresponding cantilever sections 642E, 642F, and 642G, Similarly, cantilever section 649M connects foot 642 M to isolated die pad 64 ?B, together with tie bars 644C and 644D stabilizes isolated die pad 647B.
- the resulting USMP has 16 distinct feet supporting up to 14 unique electrical connections
- FIG. 19C As shown in the right side illustration of Figure 23C, added stability can be gained by utilizing opposing feet as depicted along widthwise cutline F ⁇ F f and shown by its corresponding cross section is Figure 19C, where foot 652D and connecting cantilever 659D, foot. 652M and connecting cantilever 659M, and tie bar 654B together form a triangle supporting isolated die pad 657B, The same concept is used for isolated die pad 657A comprising die pad connected wide foot 6522, opposing foot 652L connected to the die pad by cantilever section 659L, which together with tie bar 654 A stabilize isolated die pad 657 A.
- Wide feet 652Z and 652 ⁇ are designed to accommodate Integrating a vertical power device such as a power MOSFET where feet 652Z and 652L together conduct the die's backside drain current and heat while foot 652Y supports multiple bonding wires needed for bonding the die's topside high current source connection, ,
- the aforementioned concepts for isolated and exposed die pads may be combined in dual die pad packages such as those shown underside views of 16-footed USMPs shown in Figure 23D.
- exposed die pad 666 is connected to foot 662 L with vertical column 669 L and by tie bar 664A.
- Foot 662D with, connecting cantilever 669D, opposing foot 662M with connecting cantilever 669M, and tie bar 664B together form a triangle supporting isolated die pad 667.
- the USMP comprises 16 distinct feet supporting 15 unique electrical connections.
- exposed die pad 676 extends beyond plastic 671 to form wide foot 672Z.
- wide foot 672Z is positioned on the opposing side of the package in order to facilitate multiple bond wires for high current connections.
- One sblntio.ii is to locate the die attach locations for dual die pads at a sufficient distance that electrical shorts are highly improbable without restricting the dice's maximum available die sizes.
- the space between exposed die pads 686 ⁇ and 686B cart be enhanced by separating the exposed die pads and replacing the unused space with cantilever extensions 689A and 689B.
- the space between the feet 692E through 692 P and die pad 696L can also be increased in the same manner by surrounding exposed die pad 696A on three sides by cantilever extension 699 A in the lengthwise direction and by cantilever extensions 699C in the widthwise direction.
- the space between exposed die pad 699D and its adjacent feet M5- fee* 692A through 6920 and 692 M through 692P can be increased in the same manner by surrounding exposed die pad 696B by cantilever extension 699B in the lengthwise direction and by cantilever extensions 699D in the widthwise directions as depicted along widthwise outline X 1- ⁇ .
- cantilever extensions can be asymmetric, where cantilever extension 709A connected to exposed die pad 706A is has a length shorter than cantilever extension 709B connected to exposed die pad 706B. To support its greater length, cantilever extension 709B connects to foot 702M with cantilever bridge 709C.
- Exposed die pad 716B is surrounded by cantilever extension 719B as depicted along widthwise cutHne X2-X2' shown in cross section in Figure 24 E and by lengthwise outlines W3-W3' and W4-W4 shown in Figure 240.
- the distance of exposed die pad 7 ⁇ 6B to the nearest conductor, either to feet 7 ⁇ 2 J and 7 ! 2G or to the other exposed die pad 716A, is greatly increased and the width of plastic 71.1 is sign ifkantly widened.
- U SMP fabricated dual packages can also include the use of cantilever extensions also referred to herein as cantilever interconnections, cantilever beams, or cantilever beam interconnections, io improve wire bonding and package to die interconnections.
- Cantilever beam interconnections facilitate improved access to hard-to-reach portions of an 1C, circumventing bonding angle limitations, minimizing bond wire length, and reducing stray inductance and parasitic resistance. Examples of cantilever beam interconnections are illustrated in Figure 25 A- for 16-footed USMPs integrating various combinations of exposed and isolated die pads with isolated cantilever extensions.
- cantilever extensions 759 A, 759H, 7591, and 7.59P surround die pad 756, expanding available wire bond locations to facilitate improved bonding angles. I n this manner, wire bonding from ail four sides of a semiconductor die can be achieved in a dual-sided package, facilitating product in a dual-sided package previously possible only in a quad package.
- the beams are secured in at least two points in the package.
- cantilever beam 759A is supported by tie bar 754A on one side and connects to foot 752A on its other end. Wire bonds from • cantilever beam 754A therefore can reach semiconductor die bonding pads located adjacent to the bottom edge of die pad 756 thai were previously not counectible by a direct bond from foot 752.4.
- cantilever beam 759H is supported by tie bar 754B on one side and by foot 752 H on its other end, cantilever beam 7591 is suspended between tie bar 754C- and foot 7521, and cantilever beam 759P is suspended between tie bar 754D and foot 752P.
- Outlines V-V identify the widthwise structure of the package, while cuil.tn.es ⁇ 1.- ⁇ and ⁇ - ⁇ identify the lengthwise structure transecting and transecting the tie bars, as depicted in Figure 24G including cantilever beam extension 759.H, exposed die pad 756, and cantilever beam extension 759 ⁇ » cut line ⁇ 1- ⁇ , cantilever beam extension 7591 is indistinguishable by cross section from tie bar 754C, and similarly cantilever beam extension 759P is indistinguishable by cross section from tie bar 754D.
- the cross section ofcutline V-V" shown in Figure 19L illustrates the width wise cross section of dual cantilever beam structure, where cantilever extension 353L connects to foot 352A.
- isolated cantilever beam extension 769B is suspended between feet 762 H and 7621 and further supported by tie bar 764B in order to facilitate easy bonding wire access to any semiconductor die (not shown) mounted on exposed die pad 766.
- tie bar 764B the cross sectional structure of cutline F-F is depicted in Figure 19C.
- Isolated die pad 767 is supported in. two points - by cantilever bridge 769 A connected to foot 762N and by tie bar 764A.
- Figure 25B comprises underside views of two alternative embodiments of ⁇ -footed USMPa integrating dual exposed die pads with isolated interconnections.
- the illustration on the left comprises two die pads, i.e. exposed die pad 776 and isolated die pad 777, with an intervening isolated cantilever beam 779D suspended between feet 772D and 772M identified along outline F-F as depicted in Figure 19C.
- the lengthwise cross sections of this package and leadframe identified by outlines Y3-Y3' and Z3-Z3' are depicted in the cross sections of Figure 241.
- FIG. 25B The illustration on the right side of Figure 25B comprises two die pads, i.e. exposed die pad 7S6 and isolated die pad 787, with an isolated cantilever beam 789H suspended between foot 7S2H and tie bar 784B at the top of the package.
- a cross- sectional view of isolated cantilever beam 789H is depicted by cutlme C-C shown in Figure 19 A.
- the lengthwise cross sections of this package and leadframe identified by cutimes Y4-Y4' and Z4-Z4' are depicted in the cross sections of Figure 243.
- Quad USMP Footed Packages depict a variety of four-sided, i.e. quad package constructions that can be fabricated with the USMP process and methods disclosed herein.
- a quad package is a package where leads or feet are present on three of four sides of the package.
- Quad packages may be square or rectangular.
- the drawings generally include a perspective illustration- of the package and two underside illustrations ⁇ ⁇ one using an exposed die pad version, the other comprising an isolated die pad version of the same package. In- most, cases the perspective view is identical for both the exposed die pad and isolated versions.
- any footed quad package can be converted into a quad leadless package, i.e. a QFN equivalent footprint having no feet extending beyond the plastic body's edges, simply by aligning the laser cuts for the metal removal to the same regions and edges used to define plastic removal.
- a quad leadless package i.e. a QFN equivalent footprint having no feet extending beyond the plastic body's edges
- Figure 26A illustrates a. perspecti ve view of a 16- footed quad USMP package 900 comprising plastic 911. tie bars 914A through 9I4C. and feet 912A through 912H.
- FIG. 900 illustrates the underside view of the 16-footed USMP package 900 with ait exposed die pad 917 where the cross sectional construction in either the lengthwise or widthwise direction is illustrated by outline K-K! as shown in Figure J 9F, in contrast.
- Figure 26C illustrates the underside view of the 16-footed USMP with an isolated pad 917 where the cross sectional construction in either the lengthwise or widthwise direction is illustrated by outline L-L' as shown in Figure 19F.
- Figure 27A comprises underside views of various 4 and 6-footed quad- USMPs with exposed die pads,
- the upper left comer plastic 921 comprises exposed die pad 926, tie bars 924, and four feet 922, located one per side.
- a quad package with 4 feet is not area effective and is better implemented as a dual package shown previously. With 6 feet, the utility of a quad USMP design improves.
- exposed die pad 936 is substantially larger than the previously described die pad 926.
- the resulting package comprising rectangular shaped plastic 931 has six feet 932, with two located on the package ends and two on each lengthwise edge.
- the die pad size can increased by connecting: two feet 948 to die pad 946 shown in the lower left illustration of Figure 27 A as shown along outline A-A' or alternatively as shown in die lower right illustration by connecting four feet 958A and 958A. to die pad 956 as depicted along ending E-E'.
- square quad footed USMP comprises plastic 961, exposed die pad 966, corner tie bars 964, and feet 962 located two to a side, having a cross section depicted along eutline ⁇ - ⁇ I» its isolated-die-pad vefsion shown in the lower left illustration of the same figure
- square quad footed USMP comprises plastic 961 , isolated die pad 967, corner tie bars 964, and feet 962 located two to a side, having a cross section depicted along outline L ⁇ L ⁇
- the upper left corner USMP comprises plastic 971, exposed die pad 976, .comer tie bars 974, and feet 972 located two on teach, end and three on each side.
- the package has a cross section depicted along eutline E-K f . in its isolated-die-pad version shown in the lower left illustration of the same figure, rectangular quad footed USMP comprises plastic 971 , isolated die pad 977, comer tie bars 974, and feet 972 having a cross section depicted, along eutline L- ⁇
- an 8- ' footed, quad USMP comprises an exposed die pad 986 surrounded, by plastic 981 connected by vertical column 988 to two feet 982B as depicted along cross section of eutline A- A'. The remaining feet 982 A are not connected to the die pad.
- an 8-footed quad USMP comprises an isolated die pad 987 connected by cantilever 989 to two feet 982B as depicted along cross section of eutline C ⁇ C The remaining feet 982A are not connected to the die pad.
- the 8-footed quad USMP comprises seven feet 982 not connected to exposed die pad 996 and one wide foot 993 connected to exposed die pad 996.
- the corners of exposed, die pad 996 on the opposing side not connected to foot 993 include tie bars 994.
- the lower right illustration of Figure 27C shows a the isolated equivalent of a 8-footed quad USMP comprising seven feet 992 not connected to isolated die pad 997 and one wide foot 993 connected, to isolated die pad 997.
- the corners of isolated die pad 997 on the opposing side not connected to foot 993 include tie bars 994.
- Figure 27D comprises underside views of 8- and 10 ⁇ footed rectangular-shaped quad USMPs with exposed and isolated die pads, in the upper left illustration comprising plastic 1001 , exposed die pad .1006 merges into four feet 1002B while the remaining feet .1002A are isolated from exposed die pad 1006,
- the lengthwise cross section is depicted along symmetric outline E-E' while the widthwise cross section is depicted along symmetric outline K-K',
- the resulting USMP comprises 10 feet but only seven unique electrica.1 connections.
- the package is the lower right, is identical in construction except that isolated die pad 100? replaces exposed die pad 1002B.
- Figure 28A comprises underside views of 12-footed square quad US MPs with exposed and isolated die pads formed within plastic 1011 , In both drawings the die pad, is connected in all four corners by tie bars 10.14 and surrounded by isolated feet 1012, three on each package edge.
- the left side illustration utilizes an exposed die pad 1016 while the right side package uses an isolated die pad 1017,
- Figure 28B comprises underside views of 16-footed rectangular- shaped quad tJSMPs with exposed and isolated die pads formed within plastic 1.021.
- the die pad is connected in all four corners by tie bars 1024 and surrounded by isolated feet 1022. five on each long edge of the package and three on each short edge.
- the top illustration utilizes an exposed die pad 1026 while the lower package uses an isolated die pad 1027-
- Figtire 29 A comprises an underside view of a 20- footed rectangular-shaped quad USMP formed in plastic 1031 with an exposed die pad 1036 a twenty isolated leads 1032 located with four on each end and six on each of the sides .
- Figure 29B comprises an underside view of the same 20-fboied rectangular-shaped quad USMP except that it utilizes an isolated die pad 1037,
- Figure 30A comprises an underside view of a 48-footed quad USMP with an exposed die pad 1046 comprising plastic 1041 , fbnr tie bars 1044 located in the package corners, and 48 feet 1042 located with 12 feet on each edge.
- Fig, MB comprises an underside view of a.48-footed quad USMP ' identical to the prior package except thai it employs an isolated die pad 1047.
- the same package with isolated die pad 104? includes four vertical columns or posts I049A through 1049C to provide added stability to the leadframe. The posts are spaced sufficiently tar apart to avoid any risk of unintended PCB s horts to isolated die pad 1047,
- FIG. 31 illustrates that any quad multi-footed USMP package can be integrated with an extended heat tab.
- USMP 1050 includes plastic 1051, die pad connected foot 1052F, eleven isolated feet 1052 A through 1052E, and 1052G through 1052L, extended heat tab .1058, and heat tab connected foot 1053.
- the design marries the low inductance and high pin count capability of a USMP IC package with the thermal dissipation capability of a USMP power package, facilitating advanced power IC designs.
- the laser metal removal process shown in Figure ⁇ 2 ⁇ is an example of a selective tie bar removal, in the example shown, rectilinear sawing of leads unavoidably leaves an unwanted tie bar artifact, lie bar 148, which cannot be selectively removed using mechanical means such as cutting, clipping, or sawing, without the risk of damaging the plastic mold and adjacent leads.
- the unwanted metal protrusions can safely be removed by laser even between closely spaced adjacent feet or leads. Because the tie bar removal is an optical process, no space is required for clamping or holding the package of leads in place.
- FIG. 3SC Another example of selective tie bar removal is illustrated in power packages such as the DPAK. or D2PAK,
- the center lead of DPAK 31Q Is mechanically clipped after manufacturing, i.e. the center lead functions only as a tie bar and is not required by the customer for electrical connections. Because it is clipped mechanically, the tie bar lead unavoidably protrudes from the plastic body of the package. The length of this protrusion is determined by the clearance- needed to mechanically clip the tie bar lead without damaging the package's plastic.
- the tie bat- lead protrusion is connected electrically to the package's die pad, undesirably increasing the risk of electrical shorts between the tie bar lead and the adjacent leads.
- tie bar 444B can be cut precisely flush with the package body, i.e. plastic 441, without any risk of mechanical damage to the plastic or bending of feet 442A and 442B.
- Figure 32A illustrates a footed IC package made in. accordance with the USMP process, where tie bar 3 304A is positioned in between two feet 1 102 A and I I02B. Similarly tie bar 1 104 A is located between two adjacent feet. Together with die pad connected foot 1 102E, tie bars 1104 A and 1 104B hold exposed die pad 1 106 in place during manufacturing.
- tie bar 1 1 14A connects to the leadframes main rail 1 119 while tie bar I I 14B and foot 1 1 32E extend to connect, with metal cross rails 1 1 18, together holding exposed die pad 3 306 in place, especially important during wire bonding and plastic molding.
- the package is then cut from the leadframe, i.e. singuiated.
- the package may be held temporarily in place by adhesive tape, often referred to as "blue tape.” till the cutting is complete.
- the risk of the package twisting duration singulation from mechanical sawing or punching is completely eliminated by employing USMP laser metal removal .
- the sequence of cutting the feet or ** d£junkihg n i.e. Removing the tie bars is unimportant in the USMP process.
- either sequence, cutting the feet then removing the tie bar protrusions or conversely removing the tie bars then cutting the feet will provide the same result.
- both the feet and tie bars may be removed using a single pass laser process where the laser cuts feet, then removes tie bars, then cuts more feet in sequence based on whatever the laser scan reaches .first.
- FIG 32C An example of a USMP dual pass laser metal foot and tie bar cutting process is shown in Figure 32C where horizontal laser scans 1 12 IX cut and remove the metal leadframe connections across the street up to the package edge 1 120X (i.e., the ends of the feet) and where transverse laser scans 1 12 I Y in the vertical direction cut and remove the metal leadframe connections across the street up to the package edge defined by line 1120Y.
- the resulting package at this stage in the USMP process is shown in Figure 32D where tie bars 1. 1 14A and 1 1 MB protrude from plastic edge 1 101 by the same length as feet 1 102A and 1 102B.
- the laser is rescanned in the horizontal direction by horizontal scans 1123X to selectively remove tie bar protrusion 1 124B, and again by vertical scans 1 123Y to selectively remove tie bar protrusion 1 124A.
- the laser spot 1 120 can be adjusted by focus and power to cut a smaller spot than that used when, clearing the street by laser scans 122 IX and 1121 Y in the previous figures.
- the resulting package 1 100 shown in Figure 32A accommodates the use of tie bars between feet., i.e. intra- lead feet tie bars, enabling stabilization of the package's die pad without sacrificing a foot by connecting it to the die pad just for the sake of providing mechanical support during manufacturing.
- isolated die pad 1 147 A is stabilized not only by die-pad-counected wide foot 1 142C and conventional tie bar 1.1.44A, but also by intt a-iead tie bar 1 144D.
- intt a-iead tie bar 1 144D Were mtra-lead tie bar 1 144D not employed, the corner of isolated die pad 1147A would be unstable, exhibiting diving board effects during wire bonding and potentially suffering dislocation, i.e.
- isolated die pad 1 147B is held in place by three supports, namely by die pad connected foot 1 ! 42D ; conventional tie bar 1 144B, and by inira-lead tie bar 1 144C.
- isolated die pad 1 145 A is stabilized by die-pad-eonnecied wide foot 1 152(1, conventional tie bar 1154 A. located on the end of the dual package having no feet, and by intra- lead tie bar 1 154D located on the footed side of the package.
- Isolated die pad 1 157B is supported by one conventional tie bar .1 154B and by two intra-lead tie bars 1154C and 1154E on opposing sides., forming a stable triangle base.
- Intra-lead tie bars also make advanced interconnections possible within a USMP implemented package.
- a 10- footed USMP contains two die pads - one exposed and the other isolated, along with an isolated intra-package interconnection. Such interconnections are valuable when a.
- exposed die pad 1 166 is stabilized by conventional tie bar 1 164B and intra-lead tie bar 1164C while isolated die pad 1 167 is stabilized by the support triangle comprising conventional tie bar 1 164A and intra-lead tie bars 1 164D and 1 164B.
- Isolated intra-package interconnection 1164G connects foot 1162H on one side of the package to foot 1 162E on the opposite side of the package diagonally located near opposite corners of exposed die pad 1 166.
- Intra-lead tie bars are also applicable for quad USMPs.
- a quad footed USMP contains exposed die pad 1176 stabilized by conventional comer tie bar 1174C and by intra-lead tie bar 1 174D while isolated die pad 1 177 is stabilized in four locations, namely with corner tie bars 1174A and I174F and with intra-lead tie bars 1174B and ⁇ 74 ⁇ .
- corner tie bars 1174A and I174F and with intra-lead tie bars 1174B and ⁇ 74 ⁇ .
- leadframe geometries .and package features can be flexibly determined in two different ways, namely
- the geometric feature can be created as part of the leadframe fabrication process
- the geometric feature can be created by laser ex post facto, i.e. performing
- a geometric leadframe feature is the thermal comb shown in Figure 34 A where a DPAK or D2PAK package includes plastic 1201, feet 1202 A, 1202B an 1202C, tie bars 1204 A, cantilever extensions 1209A and 1209C, and exposed die pad 1206.
- the exposed die pad 5206 merges into a heat tab 1208 A with a thermal comb comprising metal lingers 1208B, 120SC, 208D, and 1208E.
- the fingers as shown are constructed using the full leadframe thickness, i.e. a vertical column 100 A originally shown in Figure 9A.
- the inner periphery of the fingers includes a wide serpentine foot 1203 for solder to wet onto.
- the comb structure maximizes electrical thermal and electrical conduction between the package and the PCB. improving thermal conduction.
- the exposed solid metal portion of the heat tab, i.e. heat tab 1208A maximizes thermal convection into the air.
- FIG 34B illustrates the case where the thermal comb is prefabricated into the leadframe.
- thermal comb fingers 1218 and their associated serpentine foot 1213 are extended beyond the package edge into cross rails 1229Y, as are the extensions of feet 1212.
- tie bars 1214 connect to rails 1229X and 1220W.
- the package edges are defined in the lengthwise by laser outlines 1220Y defining the length of package feet 1.212 and thermal comb fingers 1218, and in the wtdthwise direction by laser outlines 1220X cutting tie bars 1214 flush with plastic 1201.
- FIG 34C between the outlines 1220Y numerous vertical laser scans 1221 Y are employed to remove leadframe connections to the package feet and thermal comb fingers.
- multiple horizontal laser scans 122 I X are preformed to remove tie bars between outlines 1220X.
- the leadframe is modified where the thermal comb 1228B connected to heat-tab 1228 A comprises thin metal, i.e. comprising the same thickness metal as feet .1212.
- This version facilitates easier wave soldering but contains less thermal mass than the prior version. More importantly, by employing thin "feet" metal, for the thermal comb, the comb ' s features can be fabricated using a laser after package molding.
- FIG 35B The leadframe prior to singulation is illustrated in Figure 35B illustrating extended thin metal foot 122SB
- holes can be cut with the laser to form the thermal .comb as shown in Figure 35C where horizontal scans 1226 remove imdiiple areas .1225 within thin metal extended feet 1228B.
- the opening dimensions can be determined by the number of scans and using focus to control the laser spot size 1227.
- the thin metal extended foot 1228B is patterned using a laser to open bolt-hole 1225.
- the fabrication process shown in Figure 36B involves multiple overlapping horizontal scans 1226 removing a circular area 1225 within thin metal extended foot 1228B.
- the USMP leadframe must be plated to improve solderabiiity and to inhibit copper oxidation, in the USMP process, the plating may be performed at several different times and by several different methods, namely
- the USMP process sequence comprises leadframe formation (step 1250A), leadframe pre-plating (step 1250B), molding (step 1250C), laser plastic removal (step 1250D) and metal patterning and singulation (step 1250E).
- step 1250A leadframe pre-plating
- step 1250B molding
- step 1250D laser plastic removal
- step 1250E metal patterning and singulation
- post-deflasli leadframe plating is then plated in what is referred to as "post-deflasli leadframe plating" (step 1251B) followed by metal patterning and singulation I250E,
- de-flash refers to the removal of stray bits of plastic resulting from sawing or punching but is not an issue with laser plastic removal.
- An example of a pre-piated !eadfranie is shown in Figure 38, where copper die pad 1261 is coated on all sides by plated metal. 1269 and foot 1262 and.
- cantilever 1263 as well as the vertical column connecting them are coated by the same plated metal 1269, While pre-plated leadfram.es are generally fine for small packages, for large and high pin count packages and power packages the packages may suffer poor adhesion and delamination between the plastic and the plated metal.
- plastic 1260 A may delaminate in regions 1265 A and 1265B.
- Surface 1265C may also delaminate from, underside plastic 126GB. Delamination in any area may cause a reliability failure.
- regions 1269 A, 1269B arid ⁇ 269C are clear of selectively plated metal 1270 because plating in those regions was intentionally inhibited.
- Three methods may be used for selective plating. In one case, a seed layer such as titanium, platinum, palladium, nickel, or various refractory metals is deposited, in the areas where plating is desired. .Numerous methods may be employed to create a selective seed layer.
- the seed layer can be deposited locally through an intervening stencil mask so that it is present only where the plating is intended to occur.
- This method to form a patterned seed layer is referred to herein as a "patterned deposition" process
- the lead.fr ame is coated or deposited uniformly with the seed layer metal, then is selectively coated with a photoresist, through a patterned stencil mask, exposing only those areas where the seed layer should be removed. After baking the photoresist to harden it, the seed layer is then etched in an acid that attacks the specific metal but either does not etch or only slowly etches copper, thereby removing the exposed seed metal. After removing die photoresist and cleaning, the leadframe is ready for plating. This method to .form a patterned seed layer is referred to herein as an "masked etch-back" process
- the leadframe is coated with a photoresist through a patterned stencil mask, depositing photoresist only on those areas where the seed layer is to be removed.
- the result is a patterned leadframe some areas open to the copper and others covered by photoresist.
- the seed layer metal is deposited atop the patterned leadframe, some metal being deposited directly onto the copper, while m other areas the metal is deposited atop the photoresist Cleaning the photoresist "Sifts off and seed metal on top of it leaving the copper leadfirame with seed metal present only where plating is intended to occur. This method to form a patterned seed layer is referred to herein as a "lift off' process.
- the seed layer could be printed onto the leadframe with a printer, dispensing seed metal in a solvent suspension that is dried dining printing by a lamp, laser, or heating block then baked to completely evaporate the solvent. After baking the leadframe is heated to a high temperature to bond the seed layer metal to the copper leadframe. Only the printed areas retain the seed layer.
- This method to form a patterned seed layer is referred to herein as a "metal printing" process.
- the leadframe After forming the patterned seed layer, the leadframe is ready for selective plating.
- the plating chemistry must be adj usted so that in the absence of the seed layer plating does not occur on the bare copper.
- plating is performed everywhere and selectively removed by masking and etching, in a third method shown in Figure 40, layers ⁇ 271 A and 127 IB of a plating inhibitor; i.e., a material that prevents plating, such as a glass or an organic compound, is silkscreened or printed onto leadframe 1261 prior to plating. After plating of plated metal 1273 A the inhibitor layers 1271 A. and 127 IB are chemically removed.
- a plating inhibitor i.e., a material that prevents plating, such as a glass or an organic compound
- the first pass of a dual-pass PCB assembly is shown in Figure 41 A where in the top illustration PCB 1300 with copper traces 1301 A, 1301B, and 1301C is coated with either conductive epoxy or solder paste, e.g. solder paste layer 1302A atop copper trace .1301 A and solder paste layer 1302B atop copper trace 1301.B. Copper trace I301C., not used for a power device, is left uncoated, as are most of the PCB traces.
- the exposed die pad package is then positioned atop the epoxy or solder paste as illustrated in the middle figure. As such, exposed die pad 1305 A sits atop solder paste layer 1302A and foot I305B sits atop solder paste layer ⁇ 302B.
- solder paste melts and exposed die pad 1305A sinks down into the solder paste layer 1302 A, which turns into molten solder.
- foot ⁇ 305 ⁇ sinks down into solder paste layer 1302B, which melts into molten solder.
- solder paste After the solder hardens an electrical and thermal connection to the PCB copper conductors is formed as shown in the bottom illustration.
- a conductive epoxy is used in place of solder paste, then the package is mechanically poshed down into the epoxy and the epoxy is left to cure. Fast set epoxies, can cure in 30 minutes to one hour.
- the solder or epoxy attach process After the solder or epoxy attach process, during wave-soldering, additional solder flows onto the top of the feet. Since the wave-soldering achieves, a higlMmaiity electrical connection between the PCB copper traces and the feet, the main purpose and benefit of the solder paste or epoxy is to facilitate improved thermal conduction into the PCB, not to act as the primary path for electrical conduction. In order to minimize the thermal resistance, the final thickness of the epoxy or solder layers 1302 A and 1302 B should be as thin as possible. If it is deposited too thick, excess solder paste or epoxy may
- solder paste layer 1302B under the package foot 1305B can be eliminated, as the electrical connection between foot 1305 and copper trace 1301 B can be achieved using the subsequent wave- soldering process. If, however, the layer of solder paste applied under the exposed die pad 1305 A is too thick, then, as shown in top illustration of Figure 41B S foot 1305B may be separated from copper trace 1301 B by gap 1307.
- solder paste layer 1302 A melts into a « ⁇ -uniform wedge of solder 1302Z, making wave-soldering the foot 1305B to copper trace 530 I B difficult
- foot. 1305B my touch copper trace B01 B at only a single point 1308, making a uniform solder joint difficult to reproduce consistently.
- step 1250G plastic removal
- step 1250E metal patterning arid singulation
- a power package with an exposed die pad 1315A is coated with a thin solder layer 1319 A, including a thin solder layer 13 I9C under die pad-connected foot 1315C and a thin solder layer 1319B under foot 1315 B,
- the exposed die pad 1425A is coated with a thin solder layer 1329A.
- foot 1325C is coated with thin solder layer 1329C
- foot 1325B is coated with thin solder layer 1329B
- other feet are also coated with thin solder layers.
- the solder layer may be deposited or printed.
- attaching a power package with exposed die pad 1315 A and an USMP footed IC package with exposed die pad 1325 A to a PCB can be performed in a single step, bringing them in contact with the PCB and holding them, in place to melt the solder paste, resulting in .the structure shown in. the cross-sectional view of Figure 43B, where copper foot 1315B is melted into solder layer 1319B atop copper trace 1331 B atop PCB 1330.
- non-power packages such as a USMP IC package with plastic .1334, are attached by glue or held in position mechanically.
- solder layers now cover ail the copper feet, i.e. solder layer 1.340C covers foot 13.1.5C, solder layer 1340B covers foot 131 SB, solder layer 1340C covers foot: I325C, solder layer 1340E covers foot 1325B, and solder layer 1340F covers foot 13358.
- all power and non-power packages are niaoufaeturecl in a wave-solder flow without the need to coat the PC B with solder paste even to assemble the power devices.
- the left side drawing in Figure 44A illustrates the underside view of the solder plated DP AIL
- the solder paste is printed, with solder paste layer 1404C covering exposed die pad 1403 and die-pad attached foot I402C, with solder paste layer 1404A covering foot 1402 A, and with solder paste layer I404B covering foot 1402B. After heating the solder paste changes into solder in the same locations.
- holes 1406 are in included in solder paste layer I405C, and solder paste layers 1405 A and 1405B are made in donui shapes so that some areas are devoid of solder even after the solder paste is melted into solder.
- the purpose of the holes devoid of solder is to facilitate locations for test probes to contact the package during manufacturing without gumming, up the probe tips with solder.
- the package on the left utilizes uniform solder paste layer 1414C on exposed die pad 1413 and uniform solder paste layer I414A on the package's feet 1412.
- the package on the right employs donut-shaped solder paste layers 1415 A on the packages feet 1412 and holes 1416 in the solder paste layer 14 ISC located on exposed die pad 1413.
- probes 1.420 are positioned to contact exposed die pad 1403 and foot 1402 through openings 1406 in the solder layer 1405. In this manner, the probes do not scratch the solder and gum up the probe tips, compromising the probe's ability to achieve a good electrical contact to the device under test.
- the resulting leadframe structures shown in Figure 46, comprise the thermal compound 1465 or 1466 permanently affixed to the underside of the leadframe. during manufacturing and afterwards in the final product.
- the thermal compound 1465 is copianar with the top surface of isolated die pad 1457 and cantilever sections 1454 A and 1454C.
- the thermal compound 1466 is copianar with the bottom of isolated die pad 1457, and the gaps between the die pad and cantilever sections 1454A and 145B are filled during molding.
- FIG. 47 the fabrication sequences for the two versions are slightly different In Figure 47, the fabrication for the first case is illustrated, where the top of the leadframe elements 14S4A, 14S4B, and 1457 are covered with a temporary adhesive layer 1464, e.g., blue tape, before the thermal compound is 1465 is printed onto the backside of the leadframe.
- a temporary adhesive layer 1464 e.g., blue tape
- the thermal compound naturally fills the voids between the die pad 1457 and the cantilever sections 1454A and 1454B, making it copianar with the top edge of isolated die pad 1457.
- the temporary adhesive layer 1464 is removed.
- the backside etch of leadframe 1468 is completed, forming a thinned section 1467, shown in me top illustration.
- thermal compound .1466 is printed or coated into the cavities created by the backside etch.
- the frontside etch is then performed, as described above, resulting in the leadframe shown in the bottom illustration, with thermal compound 1466 filling the region beneath isolated die pad 1457.
- the resulting package offers a benefit of enhanced thermal conduction and lower thermal resistance than conventional isolated die pad packages.
- the thermally conductive compound provides mechanical support during wire bonding while still allowing a flat healer block to heat the die and leadframe during the wire bonding process to improve bonding adhesion.
- ⁇ shrinking die PCB area using a customized die designed to fit in a smaller U SMP made package, i.e. a die. and package shrink, ' potentially compatible with a standard PCB trace of a smaller package, e.g.. changing from a 3x3 DFN to a 2x3 DFN.
- the PCB footprint for footed packages housing a. die originally designed for a leaded package may be made smaller than their gull-wing equivalents, i.e. the package size may be reduced, in general it is commercially easier to adopt the fixed package footprints of industry-standard conventional packages and then maximize the die size.
- a footed USMP will be slightly less area-efficient than an etch type QFN or DFN leadless package occupying the same PCB space and PCB landing pad layout and slightly more area- efficient than a punch-type QFN or DFN leadless package occupying the same PCB space and PCB landing pad layout but significantly more area-efficient than any equivalent leaded, gull-wing, or bent-lead package.
- the footed USMP version will be substantially more efficient.
- the definition of the area efficiency used herein is the maximura die area for a given package di vided by the PCB area needed to mount the component as defined by the lateral extent of the plastic or the conductors used to mount the component, whichever is larger, i.e. area efficiency ⁇ & ⁇ -
- Figure 49A illustrates an example wherein a saw-type QFN3x3 package leadframe 1500 is converted into its wave-solder compatible footed equivalent leadframe 1510, whereby die pad 1506 is replaced by die pad 1516, leadless landing pads 1502 are replaced with wave solderable feet 151:2, corner tie bar 1504 is replaced by corner tie bar 1514, and plastic ⁇ 501 is repl aced by plastic 1511.
- the conventional package shown is a saw-type QFN leadless package because a saw, not a mechanical punch, is used to cut the plastic and metal landing pads to their proper dimensions.
- a leadless package after singulation no metal protrudes past the edge of the plastic, where the package's conductive landing pads 1502 are located entirely beneath plastic body 1501 , Each conductive landing pad is 0.4mra long by 0.3mm wide to enable reliable soldering.
- the landing pad or "pin" pitch i.e. the spacing or repeated spacing periodicity of the conductive landing pads, is 0.8mm. At this pin pitch, a 3mm by 3mm quad package contains 9 electrical connections, three on each edge.
- An exposed die pad 1506, held in place by tie bars 1504 can accommodate a maximum die size of 1.65mm by 1.65mm.
- the USMP process can be used to eliminate the need for solder reflow based PCB assembly.
- Using the USMP process to convert a saw type QFN with ieadframe 1520 into the footed QFN shown by leadframe 1530 in Figure 49B without requiring a change in the PCB traces and solder points requires positioning feet 1532 in the same locations where the conventional QFN's landing pads 1522 are located. Feet 1532 must extend past plastic body 1531 by a distance sufficient to insure good solder coverage, i.e. the package's "outer lead length".
- feet 1532 comprise 0.4mm-long by 0.3mm-wide solderable areas, the same as a QFN, except that the feet protrude 0.1.25mm beyond the edge of plastic .1531 with another 0,275mm conductive "heel" portion of the foot, remaining beneath the package.
- the footed package shown can be assembled onto a PCB using either wave-soldering or reilow solder assembly, without requiring any change in the PCB copper traces.
- Compatibility of the footed package with both wave-solder and reflow assembly is another beneficially "universal" aspect of the footed package, uniquely available using USMP designs and methods disclosed herein. No other such package is capable of replacing both leaded and leadless packages with the same design.
- the footed QFN is slightly less area efficient than an equivalent ⁇ sized saw type QFN package. Because the standard QFN's footprint sets the outer dimension, allocating space for package feet reduces the available area for the die pad. Consequently, the area of exposed die pad 1536 necessarily smaller than QFN die pad 1526.
- the resulting footed package has a maximum die size of only 1.4mm by 1.4mm, a reduction of approximately 20% in die area compared to a saw-type QFN package.
- a slightly larger package is required.
- increasing the size of 3x3 footed USMP to a 3x4 form factor increases the maximum die size to 1.45mm by 2.3 mm, although the package is slightly larger, the resulting footed package is wave-solder compatible while the leadless package is .not.
- the footed package is significantly smaller than any wave-soSderable leaded packages capable of packaging comparably sized die.
- the same production line used to make a USMP footed package can also be used to fabricate leadless packages.
- Using the USMP process to convert a saw-type QFN having leadfiarne .1520 into a USMP-nianufaeiured QFN of identical PCB footprint requires no changes in the die, die leadframe or PCB traces.
- package fabrication of leadless and footed packages can be performed on the same manufacturing lines without investment in package-specific equipment * specifically; eliminating the need for punch singulation machine tools and expensive leadframe-specific "machine iooi die".
- the machine tool die is a cutting tool and should not be confused with a semiconductor die.
- the resulting manufacturing is lower cost and more flexible. Lacking conductive feet, however, the leadless QFN package still requires expensive reffow-based PCB assembly, even using the USMF manufacturing process.
- Figure 49B illustrates the conversion of a 16-pin saw-type QFN4x4 package Ieadframe 3520 into its wave-solder compatible footed equivalent Ieadframe 1530.
- the impact of this change to accommodate the foot is that plastic body 1521 is reduced slightly in size to form new plastic body 1531, and corner tie bar 1524 is in the final package shortened in size to form new tie bar 1534, cut by laser to be flush with the exterior surface of the plastic body 1531.
- the table describes that a saw-type QFN is capable of packaging a die up to 2,65mm by 2,65mm while the footed version accommodates a slightly smaller maximum die, in this example, 2,4mm by 2.4mm, representing a reduction of approximately 18% in die area.
- the equivalent area footed package 1550 offers a 25% larger die area, i.e. the footed package houses a semiconductor die 125% that of the punch type QFN maximum die size of 2.145mm by 2.145mm.
- the punch type QFN 1540 maximum die size is smaller because its conductive landing pads 1542 must extend deeper into the package than feet 1552 to prevent being ripped from the plastic 1541 during punch singulation, a mechanical process which imparts significant stress of the package's plastic and conductors.
- die pad 1546 increases in size to form larger die pad 1556
- plastic body 1541 is increased in size to form new plastic body 1551
- comer tie bar 1544 is adjusted in size to form new tie bar 1554, cut by laser to be flush with the exterior surface of the plastic body 1541.
- the footed QFN designed for assembly on a PCB with a 4x4 trace has a maximum die size 18% smaller than a saw type QFN and 25% larger than a punch type QFN as summarized in the table shown in Figure 49D.
- the area efficiency r ⁇ m* of the three packages can be compared directly as 38% tor either the saw type QFN or the USMP singulated QFN, 31% for the QFF (footed QFN), and 28% for the punch type QFN.
- the saw type QFN can also he fabricated by the USMP process without any required change in leadframe design or the matrafacturing process (except for feptOgrammbg the laser scans).
- the USMP process involving laser metal removal arid singulation can be used to interchangeably manufacture both the USMP leadless QFN44 and the tooted QFN44.
- the footed package nomenclature QFF represents a simple modification for the acronym QFN meaning "quad flat no-lead” package into a QFF meaning "quad flat footed” package.
- pin pitch i.e. foot- to-foot spacing
- a 4x4 QFN or footed QFN package integrates 24 feet, six on each side.
- the resulting yield loss depends on the PCB assembly factory and the antiquity of its equipment.
- the same 4x4 package can be adjusted to 0.8mm pitch as in leadframe 1530, where the number- of feet is reduced to 16 in total, four on each side.
- the package can utilize a 0.6mm pitch resulting in 20 feet, fi ve on a side.
- the pin pitch can be increased to 1.0mm with 12 feet, 3 on each side, or to a pin pitch of 1.27mm in which case the number of feet is reduced to or 8 feet having 2 on each side,
- Table below A summary of pin pitch versos number of leads for a 4x4 footed package is shown in table below:
- the leadless package names described above apply to either QFN packages fabricated conventionally or using the USMP process disclosed herein.
- the footed package names represent a simple modification for the terminology QFN meaning “quad flat no-lead” package into a QFF meaning "quad flat footed” package.
- Figure 4.9 E illustrates the conversion of a saw-type DFN5x6 package leadframe 1560 into its wave-solder compatible footed equivalent !eadframe 1570.
- the impact of replacing leadless landing pads 15:62 to wave-solder compatible feet 1672, is that plastic body 1561 is reduced slightly in one dimension to form new plastic body 1571, while in the other dimension the plastic body size does not change so that saw cut tie bar 1564 tie and laser cut bar 1564 remain identical in size.
- the table reveals that the maximum die size of a saw type DFN package is 4.35 mm by 4.55mra.
- the footed version, the footed DFN of "DFF" is nearly the same at 4.35mm by 4.30mm, a reduction of only approximately 6% in die area.
- the footed package is, however, wave-solder compatible while the leadless package is not Moreover, the USMP process can fabricate both leadless QFN and footed QFF packages interchangeably even on the same manufacturing line and equipment.
- Figure 50A illustrates the conversion of a 2-lead DPAK or TO-252 package leadtrame 1580 into its footed equivalent leadframe 1590A
- the maximum die size of the conventional DPAK 1589 is 3,05mm by 4.98mm while the footed DPAK 1599 A can house a die 4.05mm x 4,98mm or 133% of the conventional maximum die size.
- the dimension of plastic body 158! is increased to form elongated plastic body 1591 A.
- die pad and heat tab 1586 is increased in area to form larger die pad and heat tab 1596 A, and mechanically-clipped tie bar 1584 protruding from plastic body 1581, is replaced by laser-trimmed tie bar 1594 A cot flash with the vertical edge of plastic body 1591. A.
- footed DPAK 1590B shown in Figure SOB comprises a modification to feet 1592B where the solderable portion of the foot remains 1.6mm in length but only 0.25mm of the foot extends laterally beyond the edge of plastic 1591B.
- This USMP design principle is further elaborated in the perspective views of Figure SOD where conventional DPAK includes mechanically bent leads 1582 contacting the PC-B for a distance L, in the prior example where L-l ,6mm.
- feet 1592B extend beyond the vertical edge of plastic 159.1 only by a length comprising a fraction of the total foot length L, e.g. 0.25mm to 0.5mm with remainder of the foot length L remaining under the package and not visible from above.
- footed DPAK 1599B design B is that plastic body 1591 B is extended allowing die pad and heat tab 1596B to be further expanded, increasing the maximum allowable die size to 5.29mm x 4.98mm, representing a substantia! die size increase, i.e. offering the ability to package a die over 173% that of a conventional DPAK • using the same PC B board space.
- Tie bar 1594B can also be laser trimmed flush with the vertical face of plastic 1591 B, eliminating the unwanted protrusion of mechanically trimmed tie bar 1584 is conventional DPAK assembly.
- a direct comparison of the two U SM P footed DPAKs 1599A and 1599B to the conventional DPAK 1589 in Figure 50C illustrates that in the USMP design, space saved reducing the exterior length ⁇ , where ⁇ 3 ⁇ 4 ⁇ ⁇ 2.
- ⁇ ⁇ is used to increase area of die pad and tab 1586 to achieve larger area die pad and heat tabs 1596A and 1596B.
- the length "L" of the copper lead contacting the PCB remains constant at L ⁇ 1.6mm.
- AY the protruding length of the lead or the foot, varies from ⁇ 3 ⁇ 2.7mm for the DPAK to ⁇ 2 - 1.6mm and ⁇ 2 - 0.25mm for the footed designs.
- tie bars 1594A and 15948 can be completely enclosed, within plastic body 1591 A and plastic body 1591 B respectively, while in the conventional DPAK 1589, tie bar 1584 unavoidably protrudes from the package and plastic 1581, increasing the risk of unwanted and potentially dangerous electrical shorts.
- footed packages 1599A and 1599B can be made significantly thinner, typically 30% to 70% thinner than conventional DPAK 1589, depending on the thickness of the ieadframe and the desired amount of heat spreading.
- FIG. 5 ⁇ A comparison of the conventional DPAK 1589 to design- A footed DPAK ⁇ 599 ⁇ and design-B footed DPAK 1599B is shown in Figure 5 ⁇ .
- the USMP-based packages are able to house maximum die sizes 33% and 74% larger than the conventional DPAK.
- singulation uses a laser instead of a mechanical tool, and does not require mechanical bending or forming.
- USMP-fahneated DPA Ks can be produced in higher-throughput lower-cost .matrix leadframes rather on single- package strips, reducing costs and improving manoiacturabiiity.
- Figure Si A illustrates the conversion of a SOT23 package Ieadframe 1600 into its footed equivalent Ieadframe 1610 where gull-wing leads 1602 A, 1602B, and 1602C are replaced by wave-solder compatible feet 1612 A, ⁇ 62 ⁇ and 1612C 5 lead extensions 1604 are replaced by cantilever -extensions 1614, and the size of die pad 1607 is increased substantially to form new die pad 1.617.
- isolated die pad 1607 connects to lead 1602C, while the other two leads 1602 A and 1602B connect to isolated lead extensions 1604 for bonding. All the leads comprise mechanic-ally bent gull wing leads requiring long lead lengths - ⁇ in fact lead lengths longer than the die pad is wide.
- the maximum die size of the conventional SOT23 shown is approximately 0.765mm by i .706mm.
- the tooted version shown by matrix Ieadframe 1610 comprises isolated die pad 1617 connected to foot 1612C, and two feet 1612 A and 16B connected to cantilever extended beams 1614. if desired the beams can be further supported by tie bars (not shown).
- the footed package allows the plastic and the isolated die pad 1617 to expand in the direction of the leads, increasing the maximum die size to 1.365mm x 1.706mm, increasing the maximum die size to 1 78% that of present day SOT23s.
- a side-by-side comparison of the conventional SOT-23 3609 and the footed SOT-23 1639 and their corresponding leadfraraes 1600 and 1610 is shown in Figure 5 ⁇ illustrating that the PCB area efficiency of the conventional SOT-23 of only 13% can be improved by the USMP footed package to 24%, and the footed SOT-23 can house a die 78% larger than the conventional SOT-23 package.
- USMP design methods may also be applied to substantially reduce the size of gull wing IC packages.
- a TSSOP-8L package 1649 fabricated from leadframe 1640 and comprising dual tie bars 1644, gull wing leads 1642, and isolated die pad 1647 is converted into its footed equivalent package 1659A while preserving the same PCB layout for soldering.
- footed package leadframe 1650 A comprises feet 1652 A, a larger isolated die pad 1657 A, and additional tie bats 1654A for greater stability.
- footed equivalent package 16S9B comprising leadframe 1650B, feet 16S2B, an even larger isolated die pad 1657B, and tie bars 1654B,
- Figure 52C compares the three packages revealing the conventional TSSOP-8L package's PCB area efficiency of 27% can be improved to 40% or 45% using the USMP made footed package, with corresponding increases in die size of 49% and 69% respectively.
- a 49% increase in die area for the same PCB space allows the protective power MOSFETs either to reduce flie.tr on-resistance or power dissipation or to increase their current rating for the same dissipated power.
- the performance boost is especially beneficial in high-end smart phones with rapid charge capability.
- the USMP fabricated footed package also offers ' an option for either an isolated or exposed die pad providing added flexibility in thermal management
- the ubiquitous SOPS package 1669 comprising duai tie bars 1664, gull wing leads 1662. and isolated die pad 1666. and fabricated from leadframe 1660, is converted into its footed equivalent package 1679 A while preserving the same PCB layout for soldering.
- the footed package 1679A fabricated from leadframe 1670A, comprises feet 1672 A, a larger isolated die pad 1.676A, and additional tie bare 1674A for greater stability.
- the isolated die pad I676A. can be replaced with an exposed die pad as required, offering perfect co-planarity because the feet and the die pad are made from the same piece of copper.
- the footed package 1679 A Similar co-planarity is not possible using conventional SOPS 1669 because mechanical lead bending is intrinsically imprecise.
- the footed package's die pad 1676 A increases to support a maximum die size of 3.285mm by 4.102mm, a 96% increase in die area over the 2,213mm by 3.102mm maximum die area of the conventional SOPS package 1669.
- the maximum die size is calculated for an isolated die pad useful for ICs or discrete transistors, not limited only for packaging discrete power MOSFETs.
- footed package 1679B. fabricated from .leadframe 1670B. comprises feet 1672:6, a larger isolated or alternatively an exposed die pad ⁇ 676 ⁇ , and additional tie bars 1674B for greater stability.
- the alternate footed package's die pad 1676B increases to support a maximum die size of 3.792mm by 4.102mm, a 127% increase in die area over conventional SOPS 1669 This doubling m die area can be used to accommodate larger ICs with added functionality., or to increase the maximum die size of one or more power MOSFETs to lower on- resistance, reduce heating, improve efficiency or expand the current handling capability of a product.
- U SM P footed pac kage technology becomes most pronounced In quad-leaded gull wing packages.
- industry standard and commercially available LQFP package 1709A fabricated from leadframe 1700 A and •' having a 7mm by 7mm body, comer tie bars 1704A, gull wing leads 1702A, and isolated die pad 1 706A is converted into its footed equivalent package 1719A while preserving the same PCS layout for soldering.
- footed package 1719A fabricated from leadfrarae 1710A ; comprises feet 1712A, a larger isolated die pad 1716A ? and comer tie bars 1714A.
- the isolated die pad can be replaced with an exposed die pad as required.
- the footed package's die pad 1716A increases to support a maximum die size of 6.35mm by 6.35mm, a die area 318% that of a
- footed package 1719B fabricated from Ieadframe 1710B and comprising feet 1712B, corner tie bars 1714B, and larger isolated die pad 1716B is able to increase the maximum die size to 6.750mm by 6.750mm.
- footed replacements for the LQFP, QFF packages with leadirames 1719A and ⁇ 7 ⁇ 9 ⁇ are capable of maximum die sizes 65% and 85% larger than the maximum die size for the hypothetical reference LQFP leadframe 1708, and over 200% larger than the maximum die size for the commercially available 7x7 LQFP packages.
- the TSSOP takes triple the area and the SOP requires six times the area.
- the LQFP55 has acceptable area efficiency except it cannot package a 2.65mm by 2.65mm die, so it is eliminated as an option.
- the LQFP66 is only double the PCB area, but it does not exist in production and it is unlikely any packaging company will pay the high cost to bring up an obsolete package with a limited market. The result is the commercially only available LQFP that fits the di e is the 7mm by 7mm package, triple the size of what is needed .
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
In the fabrication of semiconductor packages, a leadframe is formed by masking and etching a metal sheet from both sides, and a plastic block is formed over a plurality of dice attached to die pads in the leadframe. A laser beam is used to form individual plastic capsules for each package, and a second laser beam is used to singulate the packages by severing the metal conductors, tie bars and rails between the packages. A wide variety of different types of packages, from gull-wing footed packages to leadless packages, with either exposed or isolated die pads, may be fabricated merely by varying the patterns of the openings in the mask layers and the width of the plastic trenches created by the first laser beam.
Description
.Universal Siirface-M.oiiiit Semiconductor Package
Cross-Reference to Related Applications
This appl ication is a continuation-in-part of Application No, 14/056,287 , filed October 17, 2013, which claims the priority of Provisional Applications Nos, 61/775,540 and 61/775,544, both filed March 9, 20.13, and also a continuation-in-part of Application No. 14/703,359, filed May 9, 2015 , Each of the foregoing applications is incorporated herein by reference in its entirety.
Field of the Invention
This invention relates to semiconductor packaging including methods and apparatus designed to fabricate and use surface mount packages in printed circuit board assembly.
Background of the invention
Semiconductor devices and ICs are generally contained in semiconductor packages comprising a protective coating or encapsulant to prevent damage during handling and assembly of the components during shipping and when mounting the components on printed circuit boards. For cost reasons, the encapsuiant is preferably made of plastic. In a liquid state, the plastic "mold compound" is injected into a moid chamber at an elevated temperature surrounding the device and its interconnections before cooling and curing into a solid plastic. Such packages are comm only referred to as injection molded using a method known as "transfer molding".
interconnection to the device is performed through a metallic leadfraoie, generally of copper, conducting electrical current and heat from the semiconductor device or "die" into the printed circuit board and its surroundings. Connections between the die and the ieadframe generally comprise conductive or insulating epoxy to mount the die onto the leadframe's "die pad", and metallic bond wires, typically gold, copper, or aluminum, to connect the die's surface connections to the
leadframe. Alternatively, solder balls, gold bumps, or copper pillars raay be used to attach the topside connections of die directly onto the lead frame,
While the metallic leadframe acts as an electrical and thermal conductor in the finished product, during manufacturing the leadframe temporarily holds the device elements together until the plastic hardens. After plastic curing, the packaged die is separated or "singulated" from other packages also formed on the same leadframe by mechanical sawing or by mechanical punching. The saw or punch cuts through the metal leadframe and in some instances through the hardened plastic too.
In "leaded" semiconductor packages, i.e. packages where the metallic leads or "pins" protrude beyond the plastic, the leads are then bent using mechanical forming to set them into their final shape, in other instances the metallic contacts to the semiconductor occur through conductors only accessible on the underside of the package. Such devices are known as "leadiess" packages. Regardless of leaded or leadless construction, after manufacturing, finished devices, are packed into tape and reels ready for assembly onto customers' printed circuit boards (PCBs).
leaded Packages One example of a conventional leaded package is shown in cross section in Figure 1A, where a metallic leadframe, typically of copper, comprises at least two conductors 1A and IB electrically isolated from one another and held together by molded plastic 6, Conductor 1A, the die pad, has
semiconductor die 4 mounted on it and attached mechanically and electrically by die attach layer 10 typically comprising epoxy, conductive epoxy, or solder. Die pad comprising conductor 1A then extends outside of molded plastic 6 into a conductive lead mechanically bent to form bent portion 2A and flat portion 3A. Solder 8A, covering flat portion 3 A and electrically connecting conductor lA and
semiconductor die 4 to PCS conductive trace 7 A formed in PCB 9,
The surface of semiconductor die 4 includes one or more exposed metallized areas for electrical connections (not shown), electrically connected by bond wire 5 and possibly others (not shown), comprising gold, copper, aluminum or conductive metallic alloys. In this example, bond wire 5 connects a portion of semiconductor die 4 to conductor IB. Conductor IB extends laterally outside of molded plastic 6 and
through bent portion 2B and flat portion 36 onto conductive trace 76 in PCB 9. Solder 8B electrically and mechanically connects flat portion 36 of conductor 16 to PCB conductive trace 78.
Manufacturing of the device involves mechanically bending leads to form bent portions 2A and 2B such that the bottom of flat portions 3A and 3B are coplanar for mounting on a flat surface, i.e. PCB 9. Packages with bent leads on two or more package edges are commonly referred to as "gull wing " packages owing to their curved lead shape. Unfortunately, mechanical processes are imperfect and subject to unavoidable variability. Attempts to scale gull wing packages to thin dimensions, i.e. to manufacture low profile gull wing packages, fail below imm heights because the mechanical variability becomes and intolerable percentage of the total package height As such, gull wing packages are not able to serve the market for thin products and such packages have been completely eliminated from ceil phone and tablet designs. Other products where gull wing packages persist because of their relatively low cost are, however, unable to be miniaturized in part because of the minimum height restrictions of gull wing packages.
Aside from issues with scaling gull wing packages to below 0,8mm for low profile applications, such 1C packages do not normally include a thick exposed die pad to act as a heat sink and without special design modifications are therefore unable to dissipate any significant power or spread heat effectively. Despite its l imitation in profile height, poor lead coplanarity, and lack of heat sinking, one advantage of gull wing packages is their compatibil ity with low-cost "wave-solder" PCB assembly methods. Wave-solder based PCB manufacturing is significantly easier and cheaper than reflow assembly used in high tech PCB factories for cell phones and tablets, offering a cost advantage per PCB area of 2X to 4X over reflow assembly. In consumer electronics large PCBs such as those used in HDTV backlighting, the PCB cost per board area is a dominant economic consideration overriding concerns or the limitations in lead coplanarity, package height, and power dissipation suffered by gull wing packages.
Gull wing type packages include small outline or "SO" packages such as the eight-lead SOPS, the sixteen-lead SOP16, etc; the three pin small outline transistor
or "SOT" package such as the SOT23; the thin small outline package or TSOP package such as the six-lead TSOP6; the thin super small outline package such as the sixteen lead TSSOP1.6, the quad leaded flat pack such as the 24-lead QFP24, and the low-profile quad leaded flat pack such as the 28 lead LQFP. The term "low-profile" is historic as compared to other gull wing packages of the day and sti ll requires at least a 2mm minimum height, i.e. not low profile by today's standards for low-profile meaning package heights ranging from 0.4mm to 0,8mm.
Figure IB illustrates the cross section of another type of surface mount package unable to scale to thin dimensions. The package, known as the transistor outline or "TO" type package, is used for power packages needed for dissipating and spreading heat from a power semiconductor device or voltage regulator into a printed circuit board. Popular TO packages include the leaded TO-220 for through hole mounting and its surface mount versions, the TO-252 also known as the DPAK, and the TO-263 or D2PAK. Such power packages rely on die pad IC with an exposed back side as a heatsink in order to achieve heat spreading, improve package power dissipation, and lower the package's thermal resistance. Also known as a heat slug, die pad IC may include an additional heat tab ID extending laterally from die pad iC beyond molded plastic 6, Power semiconductor die 4 is attached to die pad IC using die attach 10 which generally comprises conductive epoxy or solder.
Unlike the previously illustrated integrated circuit package, in power appl ications both current and heat are conducted out of the package from the bottom of semiconductor die 4. As such, the backsi de of sem iconductor die 4 generally includes a backside metal such as a tri-metal sandwich of titanium, nickel and silver or gold to form a solder able backside. The tri-metal sandwich is deposited on the backside of the die during wafer fabrication after mechanical and chemical thinning and roughening of the substrate. The roughening is required both for good adherence as well as to insure good ohmic contact, i.e. low contact resistance, between the metal and the semiconductor.
As in the IC package shown in Figure IB, the surface of semiconductor die 4 includes one or more exposed metallized areas for electrical connections (not shown), connected electrically to conductive lead IB by bond wire 5 and possibly
others (not shown)/ comprising gold, copper, aluminum or conductive .metallic alloys, in this example, bond wire 5 connects a portion of semiconductor die 4 to conductor 18. Conductor IB extends laterally outside of molded plastic 6 and through bent portion 2B and flat portion 38 onto conductive trace 78 in PCB 9. Solder 8B electrically and mechanically connects flat portion 38 of conductor IB to PCB conductive trace 7B. Manufacturing of the device involves mechanically bending leads to form bent portion 2 B and others {not shown] such that the bottom of fiat portion 3B is eoplanar with the exposed bottom surface of die pad 1C for mounting on a flat surface., i.e. PCB 9. Unfortunately, mechanical processes are imperfect and subject to unavoidable variability, leading to mismatches between the bottom of flat portion 3B and die pad 1C.
In PCB 9 board assembly, solder 8B, typically formed by wave-soldering easily covers package lead flat portion 3B but as shown by solder 8A is unable to cover heat tab I D. As a result, a layer of additional solder 11 must be place atop PCB conductor 7 A before mounting the power package, using wave-soldering. The operation of placing solder onto the PCB is generally performed one package at a time, using pick and place machines, or in low cost factories, manually, using low- cost factory workers. Aside from its poor coplanarity between the bottom of leads and the back of an exposed die pad and its inability to scale to thin package profiles, the need for manual placement of the solder under the heat tab is another disadvantage of conventional surface mount power packages.
Figure 2 illustrates a flow chart of a process for manufacturing leaded surface mount packages. Both packages start with copper sheet 20. The width of the sheet is matched in width to the machines intended to handle and process the strip in assembly, The thickness of the copper is typically 2Ο0μ«ι for ICs and SOGjim for power packages, in the case of ICs., as indicated in step 2 IB, a one side masked etch is optionally performed to define the die pad, leads, as well as the leadframe rail and tie bars used to hold everything together during processing, in the case of power packages, as indicated in step 21A, the leadframe must be selectively thinned to distinguish the leads from the thick die pad. A second etch is then required to define the die pad, leads, as well as the leadframe rail and tie bars used to bold everything
together during subsequent processing. As an alternative process, a punch can be used to define the die pad., leads and support, then a stamp can foe used selectively to squeeze metal locally to thin it This mechanical process, while faster than etching, creates several problems. First, compressed metal exhibits mechanical stress not present in etched leadfranies. Stress can lead to cracking of plastic or silicon die contacting the stressed metal As a further complication, in leads mechanically thinned by stamping, the excess metal squeezes out the sides of the thinned, lead and must be removed by trimming.
in either case, after the leadframe is etched or mechanically formed, the leadframe is now ready for die attach 22 comprising either epoxy for ICs or conductive epoxy or solder for power packages. After die attach (step 22), wire bonding 23A is performed using gold or copper wire for ICs and using copper or aluminum wire for power packages. Alternatively, for power devices., after bonding the gate wire in step 23 A, the clip lead is attached for the high current connection to the device's topside in step 23B.
in step '24, leadframe specific molding 24 is performed, meaning each leadframe requires its own customized leadframe cavity design to insure the plastic is located only around specific regions containing the semiconductor, wire bonds and portions of the leadframe, but not containing the lead extensions, tie bars and leadframe rails. After the plastic is melted to form the individual packages, defiash operation in step 25 removes excess plastic using mechanical or chemical processes. Next, to enable improved severability and prevent oxidation of the copper leadframe, the post-molded copper leadframe is plated with tin, nickel zinc; or palladium and then chemically etched to remove any excess plating material (step 26), Lastly the leads are bent and cut in step 27, separating each packaged die and its corresponding leads from others manufactured on the same leadframe. This final step, also referred to as singulation or trim and dejunk, results in individually packaged IC or power devices ready for electrical test The remainder of the leadframe, including tie bars, rails, etc., is then recycled to recover the copper for future use.
One major disadvantage of leaded package technology is that each package needs its own mold, commonly requiring an initial investment of over $100,000 USD. Manufacturers must consider this initial cost when performing calculations regarding their expected financial return on investment of ROi, and the TTR, i.e. the time required for recouping their investment. The unintended consequence of high initial investment is that companies become more cautious about releasing new packages into the market, new package technology and capability become
commercially available at a slower pace, and consequentially innovation and advancement slow to a snail's pace. These factors explain why power packages have progressed very little over the last five decades.
Another consideration in manufacturing is affect of U PH or units per hour throughput on unit cost Unit cost comprises material and labor costs plus the initial investment divided by the U PH. High initial investment and Sow UPH both adversely contribute to product cost While UPH for molding machines is high, productivity is sacrificed every time the factory switches packages, To change from one package to another, a mold machine must be taken out of servi ce and the mold cavity tool, the machined steel blocks that define where the plastic goes, must be manually changed. The mold machine must be reheated, and recalibrated often with some test runs to confirm that it is working well before running any production material through it Down time for changing the mold tool can be an hour or longer, reducing the average throughput and increasing production net cost per unit As much as possible, factory management will choose to avoid changing the mold tool during a work shift, delaying a specific customer's production for one or more shifts, or even for days to maximize factory throughput, even at the expense of customer service.
An example of a leaded surface mount package leadframe, before and after molding, is shown in Figure 3A. Photo 3QA illustrates l€ leadframe 33A prior to molding including conductive leads 33A and die pad 33B, in the example shown the lead frame comprises 22 leads on each of two sides of the plastic body thereby comprising a 44 lead, also known as a 44-pin, surface mount package. After molding, as shown in photo SOB, the die pad, semiconductor die and bond-wires are encapsulated by plastic, leaving only the exterior portion of conductive leads 33B
exposed. During manufacturing, every die pad is covered by its own separately molded plastic, as defined by a moid cavity tool uniquely for the specific package type. After singulation, i.e. separating the package from the ieadfranie, the resulting package is shown in perspective drawings 33 A and 33 B. The number of conductive leads may vary considerably, with dual-sided packages having from two to seven dozen leads on each side. Common duai-side packages include 3, 4, 6., 8, 12, 16, 18, 20, 24, 28, 32, 36, 40, 44 and 48 leads in total.
Figure 3B illustrates several examples of small outline or "SO" type packages including the ubiquitous SO-8, a small outline package with 8-leads 33E shown in perspective view 3 IE from above and from underneath in view 32E. As shown, package 3 IF has 1 (Meads 33F, and package-31G includes 16-leads 33F. The package shown in topside view 3 ID includes 2 (Meads 330, The underside view 32D of the same package illustrates exposed die pad 341) used to improve thermal conduction. Guaranteeing eoplanarity between exposed die pad 341) and the bottom of leads 33D in manufacturing however remains problematic. Therefore most SO type packages such as the 36-Sead package shown in topside view 31C and underside view 32C do not include an exposed die pad and are not intended for power applications.
Low pin count packages such as those shown in Figure 3C are commonly used for single transistors, dual transistors, or small analog integrated circuits such as voltage regulators, provided that the component's power dissipation is limited. Such packages may include the small outline transistor or SOT23 package 3 IK having three leads 33K, the thin small outline package or TSOP including a 5-lead version 3311 shown in topside and underside views 313H and 32H, 6-!ead version 33L shown in topside view 31 L, and the improved area efficiency J-lead wide-body package known as the TSOP-JW shown in topside and underside views 3 If and 32). Leads 33| bend underneath the package to accommodate a larger package body and die area than conventional gull wing packages, While the name suggests the package lead has a j shape, the process of mechanical lead bending actually produces an inverse gull wing, essentially the same as other gull wing packages except the leads are bent under the package body instead of outside.
Higher pin count packages utilize the placement of gull wing shaped leads on all four sides of a package, and are therefore referred to as leaded quad flat packs or LQFP packages. As shown in Figure 3D topside and underside views 31M and 32M illustrate a 32- lead LQFP having 8 gull-wing leads 33M on each side of the package while topside and underside views 31 H and 32 N illustrate a 48-Iead LQFP having 16 gull-wing leads 33N per side. Topside and underside views 310 and 320 illustrate a LQFP with gull wing leads 330 and exposed die pad 340. As in the previous SO package description, maintaining good coplanarity between the bottom of exposed die pad 340 and leads 330 is problematic since the alignment is entirely mechanical and subject to unavoidable manufacturing variability. This variability is especially severe in low profile packages so LQFP packages with exposed die pads typically have heights of 1 mm or greater.
Another class of packages comprising bent and stamped metal leadframes are those used in transistor outline or "TO" type power packages such as the aforementioned DPAK and D2PAK as shown in top perspective views 3 IP and 35P and top view 31Q in Figwre 3E. The conductive leads 33P and 33Q are bent into place during manufacturing ideally to be coplanar with the bottom of heat tab 36Q, Leads 33Q as sho wn, vary in width being slightly wider in the middle of the lead. This extra metal is left over from tie bars used to hold the leadframe together during manufacturing, The leadframe construction of view 30R shown prior to trimming and singulation illustrates the location of tie bar 37R connected to leads 33R as well as die pad 34R and heat tab 36R, While the top view appears eopianarf the actual leadframe is mechanically stamped into a multi-planar construction shown in perspective view 30S, where die pad 34$ and heat tab 36S are stamped and compressed to a height below that of leads 33S and tie bar 37S,
In contrast to the traditional DPAK and D2PAK of the prior illus tration, Figure 3F illustrates various alternative packages comprising a combination of DPAK-iike heat sink design with an eight lead package similar in outline to the S0P8. In top view 38A, the power device sits atop a die pad connected to four leads 40A and where bond wires 39A connect the die's top metallization to three leads used to carry high current and to another lead for the transistor's gate or input in top view
388, the power device sits atop a die pad connected to four leads 40B and a bond wire connects to the gate input lead hut the power-carrying bond wires have been replaced with copper clips 398. Top views 38C and 38E illustrate alternate designs for clip leads 39C and 39E. Top view 38 D illustrates the use of a large number of gold or copper wires 39D to achieve a low package resistance while eliminating the need for large diameter bond wires or clips. Finally perspective view 38F illustrates an alternate clip lead design 39F where even the gate lead is connected by a copper clip. As clearly illustrated even in clip lead designs, the copper clip comprises leads that are mechanically bent in portion 41 F so that the bottom of the clip lead 40F is designed to be coplanar with the back of heat tab 42F.
In manufacturing however, maintaining coplanarity remains problematic especially in low-profile package designs. The issue of coplanarity is revealed in the SEM cross sections shown in Figure 3G. where the back of the exposed die pad and heat tab 42F should be coplanar with flat portion 40F of lead 41F after bending. Too much bending will result in the lead 41F and its flat portion 40 F extending below die pad and heat tab 42 F, while too little bending has the opposite effect, causing below die pad and heat tab 42F to extend below lead 41F and its flat portion 40F, As shown sol der 44F wets onto the side of lead 41 F but because of the thickness of lead 40F and flat portion 41 F the solder is unable to cover the lead thoroughly, As such additional solder 43 F must be manually positioned onto a PCS before mounting the device in order to insure solder 43F solders lead 41F and exposed die pad and heat tab 42 F to board reliably. Examples of a SOP type small power packages are shown in the photographs of Figure 3H illustrating the underside view 45 G of a package with four leads 40G not connected to the die pad and one exposed die pad 42G with a connected heat tab. Underside view 45H illustrates a design where exposed die pad 420 does not connect to a heat tab but instead connects to four additional leads other than leads 40 H not connected to die pad 42H,
Lastly in Figure 3f, and number of leaded power packages such as TO220 and variants thereof are shown. While these packages are not surface mount devices in the sense that the package leads do not solder flat onto a PCB, the heat tab may be attached or surface mounted onto a heat sink for additional cooling. Top view 45J
and underside view 46J illustrate one such package with two through-hole leads 40J. A similar package is shown in top perspective view 45 N and underside view 46N. Top-view 45K illustrates another package with two long through-hole leads 40K and heat tab 42 K. Top view 45L and underside view 46L illustrate one such package with three long through-hole leads 40L and heat tab 42 L Perspective view 450 illustrates a long lead package with seven leads 400 and heat tab 420. Top perspective views 46P and 450 reveal a package .with heat tab 42P and complex lead bending resulting in leads 40P bent into two distinct rows. Mounting of packages with two rows of bent leads 40M is shown in side perspective view of power package 45M mounted on a PCB.
Leadless Packages Another class of surface mount semiconductor package is the "leadless" or "no lead" package. Unlike leaded packages where the conductor connecting the semiconductor die to the outside world protrudes out the sides of the package's protective plastic body, in a leadless package, the conductors connected to the device or 1C are available for connection to a PCB only on the underneath side of the package and not through leads protruding from the package.
Because no leads protrude from the package, leadless packages have several unique properties, some advantageous and some restrictive. Being leadless, the areal efficiency of leadless packages is significantly improved compared to leaded packages. Package area efficiency, the maximum die size divided by the external footprint, i.e. the lateral extent of the leads or plastic whichever is larger, is poor for leaded packages because a lot of space is wasted by the need to bend the lead down to the PCB surface. Package area efficiencies of 20% to 30% or worse are not uncommon for small packages like SOT and TSOP packages where significant portions of the package's area and volume are "wa sted" by plastic and metal available for the semiconductor die, i n contrast, leadless package can have area efficiencies in the 70% to 80% range, And because no metal extends from the sides of the leadless package, there is less risk of electrical shorts to neighboring component's. As a result other components on a PCB can be put closer to a leadless package than to a leadless one, i.e. leadless packages don't require as large of keep-
out zone on the PC B, The benefit of a smaller "keep-out" is a higher PCB area! efficiency., meaning it is possible to pack more semiconductor die area in the same PCB space. So ieadless packages offer both better package area! efficiency and PCB area! efficiency than leaded packages.
Another benefit of ieadless packages is they are intrinsically copianar. As an artifact of its manufacturing process, the bottom of every electrical connection appearing on the underside of a Ieadless package are, by definition, in the same geometric plane as all the others because they constitute a common piece of copper. No lead bending is involved in forming the pins so no mechanical variability is present in forming the package's exposed conductors, also known as outer leads or "lands".
Moreover, since the die pad is formed from the same uniformly thick common copper sheet as the exposed conductors comprising the package's el ectrical connections or conductive lands, the bottom of the die pad is intrinsically copianar with all the package's connections. Consequently, the die pad of a Ieadless package is naturally exposed on the package's underside, i.e. not isolated from the PCB, as an unavoidable artifact of its manufacturing process, if an isolated or unexposed die pad is desired, extra-steps must be incurred in the Ieadless package fabrication sequence to insure plastic fully encapsulates the die pad during molding.
The upper drawing in Figure 4 illustrates the cross section of a leadframe SO showing multiple products being manufactured concurrently. As shown,
semiconductor die 54A is attached to exposed die pad 51A using either conductive or insulating epoxy. Bond wire 55A electrically connects semiconductor die 54A to conductive land 518, and bond wire 558 electrically connects semiconductor die 54A to conductive land SIC, The entire device including the leadframe, die, and bond wires is encapsulated in molded plastic 56. In an adjacent section of leadframe 50, semiconductor die 54B is attached to exposed die pad 51D and electrically connected to landing pad 51E by bond wire 55C and other connections (shown only in part). Separate products are defined by saw lines 59, so although conductive lands 51 B and 5 IE, and similarly conductive lands SIC and 51 F actually comprise common pieces of copper, during sawing they are separated into different products.
During singulation, sawing, or optionally mechanical punching, cuts are made through both molded plastic 56 and the copper ieadframe to separate one product from its neighbors and to cut away any connection to the leadframe rails or tie bars. The resulting singulated product is shown by example in the lower drawing of Figure 4 for the product containing semiconductor die 54A. Because sawing along line 51.8 cuts both copper and plastic, the lateral extent of conductive land 518 and molded plastic 56 are coincident with vertical saw line 59, forming a vertical sidewa!l to the leadless package. Because of its manufacturing process, no lead can protrude laterally beyond the plastic giving the package its description as "leadless".
To mount a leadless package onto a printed circuit board, electrically connecting conductive lands 51C and 518 and exposed die pad 51 A to PCB conductive traces ?, a layer of solder or solder paste 61 must be applied before placing the package onto the PCB. This means solder or solder paste 61 must be printed or screened onto the PCB in select places as part of PCB manufacturing. After the product is positioned on top of the solder paste, the PCB is run through a '"refiow oven" or belt furnace to heat the solder paste past its melting point and electrically and mechanically connect the product's conductive lands 51C and 51B and exposed die pad 51A to the PCB conductive traces 7. Because, however, the solder paste must be screened onto the PCB in advance, and an expensive
temperature regulated refiow oven or belt furnace is required, manufacturing cost for refiow PCB manufacturing can be twice to four times the cost of simple wave- soldering, where the PCB and components are simply dipped in solder. This higher PCB assembly cost represents one of the major disadvantages of leadless packaging.
The manufacturing process for leadless packages is illustrated in the flow chart shown in Figure 5, where a copper sheet (step 60) is either etched or stamped (step 61) to define the leadframe's die pad, conductive lands., tie bars, and rails, then plated with a solderabte metal (step 62) such as tin, nickel, etc. to inhibit oxidation of the copper. Once the lead frames are prepared, product manufacturing may commence comprising die attach (step 63), wire bonding (step 64), molding (step 65), sawing or punching for singulation (step 66), and delash etching (step 67) to remove any plastic residue leftover from sawing or punching,
Unlike leaded packages, where each individual part requires its own predefined mold cavity to isolate the plastic around a single product, in leadless package manufacturing entire matrices or arrays of products are assembled and then molded into one common block of plastic. This process is il lustrated pictorial ly in Figure 6A where one common leadframe 70A prior to molding comprises the die pads and conductive lands for hundreds of distinct and separate products 71 A on a single leadframe. The leadfrarne after molding 72 A however contains only a few large blocks of molded plastic 73A, each block containing dozens of products to be separated by sawing or punching. As such different size products can be
manufactured simply by changing the leadframe with no change required in the molding machine or mold cavity tools. This feature, the ability to make different sized products represents an important benefit of leadless package manufacturing and one compelling advantage explaining the broad success and ubiquity of the package today,
A variety of four sided leadless packages made using the aforementioned process are illustrated in Figure 6B. Using a nomenclature borrowed from four- sided leaded packages., i.e. the LQFP or the leaded quad flat pack, four-sided leadless packages are referred to as quad fiat no-lead packages or QFN packages. The term four-sided or quad means that electrical connections are present on all four edges of the package but are not necessarily limited to having the same number of conductive landings on each edge. For example, the QFN shown in bottom view 75B has a total of 20 conductive Ian dings 76B comprising 6 conductive landings on two edges and four conductive landings on the other two edges, it also has an exposed die pad 77B, which may electrically be connected to one of the conductive landings.
The top perspective view 74B clearly reveals no leads are evident on the package or protruding from its sides. Only small pieces of metal, saw-cut flush with the plastic package sidewali, reveal the location of the conductive landings. While constituting a visibly identifiable feature, the exposed metal on the package vertical sidewali is not sufficient in area for soldering. Instead, electrical connection must be made underneath the package, directly to conductive landings 76B, Similarly, underside view 75C illustrates a package with 48 conductive landing pads 76C,
sixteen on each edge as well as an exposed die pad 77C. The top view 74C shows no protrusions identifying the presence of conductive leads. Underside view 751) illustrates a underside view of a QFN type leadless package with an exposed die pad 77D and 40 conductive landings 760, ten on each edge and its corresponding topside view. Another QFN package design also with 40 conductive landings 76H is shown in underside view 75E except that die pad 77E is larger than that of die pad 771) in the previous design.
Four-sided QFN leadless packages are commercially available infixed mm increments, e.g. 2x2, 3x3, 4x4, 5x5, 6x6, etc. While the package dimensions may be standardized, there is no corresponding standardized size for the exposed die pad. For example, underside view 74F in Figure 6C illustrates a package with 48 landing pads 76F, sixteen on each of four sides, but with an exposed die pad 77F comprising only a small fraction of the total package area and footprint. Variations in die pa d design are especially evident in smaller QFN packages such as contrasted by the package with underside view 751 having a large die pad 771 with 16 conductive landings versus the package of underside view 75 j having a relatively large die pad 77J with 12 conductive landings.
As shown in Figure 6D, leadless packages are also available in selected rectangular versions, generally with low aspect ratios, e.g. 2x3, 3x5, etc. For example, a rectangular QFN shown in top perspective view 74Q and underside view 75Q comprises 38 conductive landings 76Q, combining 12 conductive landings positioned along the package's long edges with 7 conductive landings located on the short edge, Exposed die pad 77Q may be electrically connected to one or more of the conductive landings or be electrically isolated, enabling the package to support 39 distinct electrical connections,
in another variation in leadless package design, conductive landings are located on only two of the package's edges instead of ail four. Such packages are referred to as DFN packages, where DFN is an acronym for dual-sided fiat no-lead packages, Examples include the DFN package shown in underside view 75P comprising elongated die pad 77P and six conductive landings 76P and package shown in underside view 75T also comprising 6 conductive landings 76T and an
alternately shaped die pad 77T. As in the prior examples, die pad 77T may be electrically shorted to one or more of the conductive landings or may be electrically independent In the design shown in underside perspective view 75 R, a rectangular DFN comprises exposed die pad 77R with 7 conductive landings on each long edge of the package.
in the extreme, the DFN design can be adapted for as little as two conductive landings 76K as shown in the package with underside view 75K as shown in Figure 6E. Exposed die pad 77 K functions as a third electrode making the package shown in topside perspective view 74K suitable for single transistors. Another leadiess package for transistors is shown in the underside view 75S comprising two conductive landings 76S and smai! die pad 77S.
Leadiess package manufacturing for QFN and DFN packages can also support dual die designs using two separated die pads as illustrated by the rectangular package shown in Figure 6F. For example, in topside perspective view 74G and corresponding underside view 75Gf a QFN package comprises two distinct exposed die pads 77G, six evenly spaced conductive landings 76G on the package's two short edges and seven unevenly spaced conductive landings on both of its long edges. Despite its unique dual die pad design, topside perspective view 74G appears identical to a single pad package of the same dimensions. Another dual die pad package shown in above perspective view 74H and in underside view 75 H has two distinct exposed die pads 77 H with six conductive landings 76H, three on each of two edges. A longer aspect ratio design is illustrated by the package with underside view 7511 with 8 conductive landings 76U and two separate die pads 7711, in PCS assembly care must be taken to prevent shorts between the two die pads by insuring sufficient spacing.
As illustrated in Figure 6G, leadiess packages can also be manufactured without any exposed die pad, For example the DFN package with underside view' 75N comprises eight conductive landings 76N three each on opposing edges while the underside view 750 represents a package with ten conductive landings 760, As stated previously, in the leadiess fabrication sequence described, extra processing steps must be included to eliminate the exposed die pad,
Lastly in Figure 6H, a QFN with a curved edge is illustrated where conductive landings 76M and the width of the base of the package shown in underside view 75M is larger in dimension than the top of the package shown in topside perspective view 74M. Such a package cannot be manufactured in the standard process described for QFN and DFN fabrications because sawing or punching unavoidably results in a perfectly vertical edge side-wall to the package with all the plastic and metal cut flush by the saw outline. Instead, such a package requires a separate mold cavity tool for each unique package much like the manufacturing of leaded packages like the SOP, SOT, and DPAK. This method of manufacturing, defin ing the plastic location by the molding process rather than by sawing, eliminates one of the major advantages of !eadless package manufacturing - the elimination of custom package- specific mold cavity tools.
Summary Lea dl ess packages offer unique advantages in flexible package manufacturing, coplanarity, low-profile capability, and the elimination of the need for expensive package-specific mold cavity tools. For all of its .advantages, one major disadvantage of the QFN / DFN leadless package is its inability to be used in wave- solder PCB factories. Because no metal lead protrudes laterally from the package, wave-soldering cannot penetrate beneath the package to solder the die pad and the conductive landings onto the PCB conductors, instead, the solder must be screened using a mask onto the PCB before component placement Also, solder flow must be performed In expensive reflow ovens or belt furnaces making the entire PCB assembly process 2 to 4 times more expensive than that of simple wave-solder factory based production. Moreover, visual inspection of leadless packages soldered to a PCB using simple automated camera inspection is impossible because the solder cannot be confirmed from the top view. Instead expensive X-ray inspection equipment is required, adding cost and safety risk into reflow PCB manufacturing.
In contrast; leaded packages such as the SOP and SOT offer a cost advantage in PCB assembly because they are wave-solder compatible and easily assembled onto low cost PCBs manufactured in fully depreciated PCB factories dating back to the 1950's, Nevertheless, despite its benefit in PCB manufacturing, the actual
■package, manufacturing of leaded packages suffers from many issues including poor lead coplanarity, poor manufacturing control in the lead bending process, risk of plastic cracking during lead bending, risk of delamination between the plastic and leads, and inability to be scaled into low profile package, especially for package heights below 1 mm,
Poor coplanarity also renders leaded packages difficult to heat sink using exposed die pads because the package's bent leads do not consistently align with the bottom of the die pad or heat slug. Because of Song lead dimensions required to perform clamping during lead bending, the length of the conductive leads results in poor package and PCS areal efficiencies and results in excessive lead inductance, adversely affecting switching performance especially in power applications. The mounting of power devices is especially problematic because special two-step soldering is required, first to solder the exposed die pad and heat tab to the PCB, and then to wave-solder the leads. Variability in the lead-bending process combined with natural stochastic variations in the intervening solder thickness placed beneath the die pad result in unpredictable misalignments between the bottom of the bent leads and the PCB conductor, leading to poor connections, cold solder joints, intermittent contact, and degraded reliability.
Another disadvantage of leaded packages is their manufacturing inflexibility , Several manufacturing steps required in leaded package manufacturing demand the use of dedicated machinery and hardware, including a package-specific mold cavity tool, paekage-speciflc ieadframe trim -and -bending machinery, package-specific dedicated handlers, package-specific defunk and defiash hardware, and more. While equipment can generally be converted to accommodate different packages, the resulting factory downtime to convert a line from one package to another results in lost productivity and a lower UPH, thereby increasing per unit manufacturing costs.
The following table summarizes these and other considerations when comparing existing package technologies.
Clearly from the above, no existing package meets the combined needs of the market. Moreover, each class of surface-mount package used today req uires completely different semiconductor package factories for manufacturing, forcing packaging companies to choose their markets with little chance to expand into new markets without incurring significant additional capital costs.
What is needed is a single package design and manufacturing process that is able to produce surface-mount packages flexibly for both wave-solder and reflow assembly, facilitate superior coplanarity among the die pad and conductive leads, achieve low package height, provide good thermal power dissipation, minimize package inductance, and eliminate the need for package specific equipment such as mold cavity tools and leading equipment
Summary of the Invention
The process of this invention utilizes a leadirame that is preferably , but not necessarily, fabricated in accordance with the methods described in the above-referenced U.S. Application No. 14/056,287, The ieadirame comprises a plurality of die pads and leads. Each of the die pads and its associated leads generally correspond to a finished package, although some packages may include two or more die pads. Some of the leads and die pads are connected together, the leads to be included in adjacent packages may be connected together across "streets'* where the packages will eventually be separated, and for additional stability during fabrication tie bars and rails may be used to connect the die pads and leads to each other.
The leads may be Z-shaped when, vie wed in a vertical cross section and, if so, they each comprise a vertical column segment, a cantilever segment and a foot. The cantilever segment projects horizontally inward towards the die pad at the top of the vertical column segment, and the foot projects horizontally outward at the bottom of the vertical column segment. The vertical column segment typically forms .right angles and sharp corners with the cantilever segment and with the foot. The bottom surface of the foot is coplanar with a bottom surfaces of the feet of oilier leads and with a bottom surface of the die pad, if exposed, in other embodiment, the lead does not comprise a foot, and it is also possible that the lead does not comprise a cantilever segment, A lead may be attached to a die pad. In some embodiments, a heat slug extends from the die pad to improve thermal conduction, and the heat slug may terminate in a foot.
The ieadframe may be fabricated using a process that comprises forming a first mask layer on a backside of a metal sheet and then partially etching the metal sheet through openings in the first mask layer in areas where the cantilever segments of the leads are to be located, and where gaps between the leads and the die pads and between the leads themselves, are to be located, and in the areas between adjacent packages. If the die pads is to be isolated, there are also openings in the first mask layer where the die pads are to he located. If the die pads are to be exposed, the mask layer covers where the die pads are to be located, and those areas are not etched. The partial etch through the openings in the first mask layer does not cut through the entire metal sheet, and a thinned layer of metal remains in the etched areas.
The process further comprises forming a second mask layer on a front side of the metal sheet, the second mask layer having openings overlying the gaps between the die pads and the leads and between the leads, the areas where the feet of the leads, if any, are to be located, and the areas between adjacent packages.
The metal sheet is then etched through the openings in the second mask layer. This etch is continued until the metal is completely removed in the areas where the gaps between the die pads and the leads and between the leads are to be located and in the areas separating adjacent packages, but the metal is only partially removed in the area where the feet of the leads, if any, are to be located. The openings in first mask layer under the cantilever segments of the leads and the openings in the second mask layer
overlying the feet of the leads, if any, are vertically offset, from each other such that segments of the metal sheet between the cantilever segments and the feet remain unaffected by either of the etch processes. These ira-etched segments will become the vertical col umn segments of the leads, If the die pads are to be exposed, the areas in which are the die pads are to be formed remain un-etched.
Alternatively, a metal stamping process may be used in lieu of the etch processes described above. A first metal stamp is applied to the first side of the metal sheet to compress and thin the metal sheet where the cantilever segments of the leads and the gaps between the die pads and the leads and between the adjacent packages are to be located (and optionally where the die pads are to be located). A second metal stamp is applied to the second side of the metal sheet to sever the metal sheet where the gaps between the die pads and the leads and between adjacent packages are to be located and to compress and thin the metal piece where the feet of the leads, if any, are to be located.
Whether an etching or stamping processes is used, the result is typically a leadframe with multiple die pads, each die pad being associated with a plurality of leads. If the package is to have leads only on t wo opposite sides of the die pad (a "dual" package), the die pad is typically held in place in the leadframe by means of at least one tie bar. The leads on the contiguous sides of adjacent packages typically extend across a "street" where the packages will be separated, or "singulated," and are typically connected together by rails. If the package is to have leads on four sides of the die pad (a "quad" package), the die pad is sometimes left connected to at least one of the associated leads, that is, no gap is formed between the die pad and the at least one of the associated leads in the above-described etching or stamping processes. Whether by a tie bar, an attached lead, or both, the die pad remains connected to the leadrrame.
Semiconductor dice are then mounted on their respective die pads, and the appropriate electrical connections are made between the dice and the leads, typically using wire bonding or flip-chip techniques. The backsides of the dice may or may not be electrically and/or thermally connected to the die pads.
In accordance with the invention, rather than using separate molds to form the plastic capsules for each package, a single mold is used to form a single plastic block
over a plurality of die pads, and their associated leads, tie bars and rails in the leadframe. The packages are then singulated using one or more laser beams.
In many embodiment, the plastic block is separated into plastic protective capsules for each of the packages using a first laser beam, which is normally moved in a series of parallel adjacent scans in the areas between the packages. Typically, the scans are performed in two sets, orthogonally related to each other, to separate the plastic into individual capsules.
After the plastic block has been separated into capsules for each of the packages, a second laser beam is used to remove the metal conductors that typically connect adjacent packages and any rai ls that may connect the metal connectors together. Again., this is normally performed in a series of parallel adjacent scans in the "streets" between the packages.
By varying the total, combined width -of the laser scans of the first laser beam, a wide variety of different types of packages may be fabricated. For example, if the laser scans of the first laser bean extend to the top surfaces of the cantilever segments of the leads, the sidewalls of the plastic capsules will be located there, and the leads will protrude from the sidewalls of the plastic capsule, if the laser scans of the first laser bean extend to the top surfaces of the column segments of the leads, the sidewalls of the plastic capsules will be located there, and the outer sidewalls of the column segments will remain exposed. If the laser scans of the first laser bean extend to the top surfaces of the feet, of the leads, the sidewalls of the plastic capsules will be located there, and the feet will extend from the sidewalls of the plastic capsule but the outer sidewalls of the column segments of the leads will remain covered by the plastic capsule. If the scans of the first laser beam cover only the "street" to be formed by the scans of the second laser beam, the sidewalls of the plastic capsules wil l be copknar wi th the ends of the leads, and a lea d!ess package will be formed.
Preferably, the wavelength and other characteristics of the first laser beam will be such that the first laser beam does minimal damage to the metal conductors embedded in. or underlying the plastic block.
According to another aspect of the invention, a solder layer is printed on the bottom surfaces of the di e pad, if exposed, and/or the bottom surfaces of the leads. After
singulation, s package treated in this way can be attached to a PCB by merely placing the package on top of the PCB and heating the package and PCB so as to melt the solder layer. If desired, the package may also to subjected to a wave-solder process to attach leads on which a solder layer has not been formed to appropriate traces or contacts on the PCX.
The techniques of this invention thus allow a wide variety of different types and sizes of semiconductor packages to be fabricated without the need for specialized equipment. This is attained by essentially varying the patterns of openings in the mask layers applied to the backside and front side surfaces of a metal sheet and by varying the combined width of the l aser scans used to separate the plastic block into capsules for each package. Where footed packages are used, the bottom surfaces of the feet are assured of being coplanar, and the difficulties inherent in the bending of leads to form gull-wing packages are avoided.
As a result, a semiconductor package manufacturer can produce packages designed to meet its customers5 specific needs economically and without undue delays. Brief Description of the Drawings
In the drawings listed below, components that are generally similar are given like reference numerals.
Fig. 1A is a cross-sectional view of a leaded IC surface mount package.
Fig, IB is a cross-sectional view of a leaded surface mount power package with heat slug.
Fig, 2 is a flow chart for leaded surface mount package fabrication.
Fig, 3A comprises a topside view of leaded surface mount leadframe and package before and after moldin«.
Fig, 3B comprises topside and underside perspective views of various dual-sided leaded IC surface mount packages.
Fig. 3C comprises topside and underside perspective views of various dual sided low-pin-eount leaded IC surface mount packages..
Fig, 3D comprises topside and. underside perspective views of various four-sided LQFP leaded surface mount packages.
Fig, 3E comprises topside views of leaded surface mounted power packages and leadframes.
Fig. 3F comprises topside and perspective views of IC surface mount leadframes adapted for power applications.
Fig, 3G is a side view of a surface mounted ! C leadirame adapted tor power applications.
Fig. 3H comprises topside and underside views of IC surface mount packages adapted for power applications.
Fig. 31 comprises topside and perspective views various leaded power packages.
Fig. 4 is a cross sectional comparison of a Ieadless package before and after singulation.
Fig. 5 is a flow chart for Ieadless surface mount package fabrication.
Fig, 6A comprises a topside view of Ieadless surface mount Ieadframe and package before and after molding.
Fig. 6B comprises various topside and underside views of QFN four sided ieadless surface mount packages.
Fig. (fC comprises various alternate topside and underside views of QFN four sided Ieadless surface mount packages.
Fig. 6D comprises various alternate topside and underside views of elongated Ieadless surface mount packages.
Fig. 6E comprises various -alternate topside and underside views of low pin count Ieadless surface mount packages.
Fig. 6F comprises various alternate topside and underside views of Ieadless surface mount packages with multiple exposed die pads.
Fig, 6G comprises various alternate topside and underside views of DFN dual sided Ieadless surface mount packages.
Fig. 6H is a topside and underside view of a Ieadless surface mount package using a dedicated QFN mold cavity tool.
Fig. 7 A is a cross sectional representation of universal surface mount package (USMP) Ieadframe regions during double etching fabrication.
Fig. 7B is one possible flow chart for USMP Ieadframe fabrication.
Fig, 8A is a cross sectional illustration of a leadframe manufactured using a viable US MP fabrication sequence.
Fig. 8B is a cross sectional illustration of a leadframe manufactured using a problematic USMP fabrication sequence.
Fig, 9A is a cross sectional illustration of various two and three region geometric leadframe elements resulting from the disclosed USMP leadframe fabrication sequence.
Fig. 9B is a cross sectional illustration of various three region geometric leadframe elements resulting from the disclosed USMP leadframe fabrication sequence.
Fig. 9C is a cross sectional illustration of various USMP geometric leadframe elements including fully etched portions.
Fig, 90 is a cross sectional illustration of various USMP geometric leadframe elements including fully etched portions.
Fig, 10 A is a plan view of a USMP IC leadframe before molding.
Fig, 10 B is a plan view of a block molded leaded IC leadframe.
Fig. IOC is a cutaway view of a block molded leaded IC leadframe.
Fig, lOD is a plan vie w of a segmented block molded leaded IC leadframe.
Fig. 10E is a plan view of a USM P DPAK leadframe before molding.
Fig. lOF is a plan view of a block molded DPAK leadframe.
Fig. lOG is a cutaway view of a block molded DPAK leadframe.
Fig, ΙβΗ is a plan view of a segmented block molded DPAK leadframe.
Fig, 11 A is a cross sectional illustration of USMP package street fabrication steps for a footed package.
Fig. 11 B is a cross sectional illustration of USMP package street fabrication for a leadless package.
Fig, I I C is a cross sectional illustration of USMP package street fabrication for an alternate footed package.
Fig. 12 A is a cross sectional illustration of USM P laser singulation and foot formation.
Fig, 12 B is graph of the optical absorption spectra of various metals.
Fig. 12C Is a schematic representation of a laser system for USMP street fabrication.
Fig, 120 is a leadframe illustrating USMP 'horizontal street fabrication.
Fig, 12E is a leadframe illustrating USMP vertical street fabrication.
Fig. 12F is a schematic of USMP street fabrication laser scan, patterns for plastic and metal removal.
Fig. 12G is a plan view of a USMP fabricated footed package.
Fig. HE is a schematic of alternate USMP street fabrication laser scan patterns for eliminating tie bar artifacts.
Fig. 13 is a USMP flow chart for footed and leadless package fabrication.
Fig. 14 A is a cross sectional view of USMP footed package fabrication illustrating starting copper sheet.
Fig, 14B is a cross sectional view of USMP footed package fabrication illustrating leadframe backside etch masking.
Fig, 14C is a cross sectional view of USMP footed package fabrication illustrating leadframe front side etch masking.
Fig. 14D is a cross sectional view of USMP tooted package fabrication illustrating leadframe after front side etching.
Fig. I4E is a cross sectional view of USMP footed package fabri cation illustrating leadframe after die attach.
Fig. 14F is a cross sectional view of USMP footed package fabrication illustrating leadframe after wire bonding.
Fig. 14G is a cross sectional view of USMP footed package fabrication illustrating leadframe after molding.
Fig. 14H is a cross sectional view of USMP footed package fabrication illustrating leadframe after laser plastic removal.
Fig. 141 is a cross sectional view of USMP footed package fabrication illustrating leadframe after laser singulation and foot formation.
Fig. 14 J is a cross sectional view illustrating how the footed package can be converted into a leadless package.
Fig. ISA is a cross sectional view of USMP packages contrasting footed and leadless package types.
Fig, 158 is a cross sectional view of USMP packages contrasting alternate types of footed and leadless packages.
Fig. 15C is a cross sectional view of USMP packages contrasting footed and leadless package types but with isolated die pads.
Fig, tSD is a cross sectional view contrasting different types of leaded USMP power packages.
Fig. 15E is a cross sectional view of a leaded power package fabricated using the USMP process.
Fig. 15.F is a. cross sectional view of a. leaded surface mount power package fabricated using the USMP process as a gull wing package replacement.
Fig, 16 is a perspective view of lead construction of footed packages fabricated •using the USMP process.
Fig, Ί7Α comprises multiple views of a footed USMP package- Fig, 17.B comprises multiple views of an alternate embodiment of a footed USMP package.
Fig, ί 7C comprises multiple views of a leadless package fabricated with the USMP process.
Fig. 170 comprises multiple views of an alternative embodiment of a leadless package fabricated with the USMP process.
Fig, Γ7Ε comprises multiple views of another alternative embodiment of a leadless package fabricated with the USM P process.
Fig, ISA comprises multiple views of a leaded package fabricated with the USMP process.
Fig. 18B comprises multiple views of a leaded surface mount package fabricated with the USMP process.
Fig. I8C comprises multiple views of a power package heat tab fabricated with the USMP process.
Fig. 19A comprises cross sectional views of exposed and isolated die pad USMP leadframes along a cutlke through a die-pad-conneeted foot and an isolated foot
Fig. 19B comprises cross sectional views of exposed and isolated die pad USMP leadfraraes along a symmetric ciuSine through die pads and tie bars.
Fig, 19C comprises cross sectional views of exposed and isolated die pad USMP leadframes along a symmetric outline through die-pad-connected feet.
Fig. 190 comprises cross sectional views of exposed die pad USMP leadframes along a outline through a heat tab and feet.
Fig, 19E comprises a cross sectional view of an exposed die pad USMP leadframes along a cutline through a heat tab and tie bar.
Fig. 19F comprises cross sectional views of exposed and isolated die pad USMP leadframes along a symmetric cutline through feet not connected to the die pad.
Fig. 19G compri ses c ross sectional vie ws of exposed and isolated di e pad USMP leadframes along a symmetric cutline through die pads.
Fig, 1911 comprises cross sectional views of exposed die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
Fig, 191 comprises cross sectional views of isolated die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
Fig. 19 J comprises cross sectional views of mixed isolated and exposed die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars.
Fig. 19K comprises cross sectional views of isolated die pad USMP leadframes along a symmetric cutline through dual die pads and die-pad connected feet.
Fig, 19L comprises a cross sectional and bottom view a Z -shaped foot not connected to a die pad.
Fig, 20A comprises various views of a 2-footed USMP with isolated and exposed die pads.
Fig. 20B comprises v arious views of an alternate embodiment of a 2-footed USMP with isolated and exposed die pads.
Fig, 20C comprises various views of a 2-footed USMP with isolated and exposed die pads and a three-sided foot.
Fig. 2iD comprises various views of an alternate . embodiment of a 2-footed USMP with isolated and exposed die pads and a three-sided foot
Fig. 21 A. comprises various views of a 3-footed U SMP with isolated and exposed die pads.
Fig, 218 comprises various views of a 3 -footed USMP with isolated and exposed die pads and a three-sided foot.
Fig. 21 C comprises various views of a 3-footed power USMP with heat tab.
Fig. 210 comprises various views of an alternate -embodiment of a 3-footed power USMP with heat tab.
Fig. 22A comprises various views of a 4-footed USMP with, isolated and exposed die pads.
Fig, 22B comprises various views of a 6-footed USMP with i solated and exposed die pads.
Fig. 22C comprises underside views of 8, 12, and 18-tooted USMPs with exposed die pads.
Fig. 22D comprises underside views of 8, 12, and 18~footed USMPs with isolated die pads.
Fig. 23A comprises underside views of 16~footed USMPs with single and dual exposed die pads.
Fig, 23B comprises underside views of alternate embodiments -of 16-footed USMPs with dual exposed die pads.
Fig. 23C comprises underside views of 1 io-footed USMPs with dual isolated die pads.
Fig. 23D comprises underside views of 16-footed USMPs integrating isolated and exposed die pads.
Fig, 24A comprises underside views of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
Fig. 24B comprises underside views of alternati ve embodiments of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
Fig. 24C comprises cross sectional views of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
Fig. 24B comprises cross sectional views of alternative, embodiments of 16- footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
Fig. 24E comprises cross sectional views of alternative embodiments of 16-footed USMPs integrating dual exposed die pads with enhanced pad-to-pad spacing.
Fig, 24F comprises cross sectional views of alternative embodiments of 16~footed USMPs integrating dual exposed die pads with, enhanced pad-to-pad spacing.
Fig. 24G comprises cross sectional views of a 16-footed USMPs integrating a single exposed die pads cantilever lead extensions
Fig, 24H compri ses cross sec t ional views of a 16~footed U SM Ps integrating an exposed die pad, an isolated die pad, and a cantilever lead extension
Fig. 241 comprises cross sectional views of an alternative embodiments of 16- footed USMPs integrating an exposed die pad,, an isolated die pad, and a cantilever lead extension
Fig. 24 J comprises cross sectional views of other alternative embodiments of 16- footed USMPs integrating an exposed die pad, an isolated die pad, and a cantilever lead extension
Fig, 25A comprises underside views of 16- footed USMPs integrating exposed die pads with isolated interconnections.
Fig. 25B comprises underside views of alternative embodiments of 16-footed USMPs integrating dual exposed die pads with isolated, interconnections.
Fig. 26 A comprises a perspective view of a 16-footed quad USMP.
Fig. 26.B comprises an underside view of a 16-footed quad USMP with an exposed die pad.
Fig. 26C comprises an underside view of a 16-footed quad USMP with an Isolated die pad.
Fig, 27 A comprises underside views of 4 and 6-footed quad USMPs with exposed die pads.
Fig. 27B comprises underside views of 8 and 10-footed quad USMPs with exposed and isolated die pads.
Fig, 27C comprises underside views of 8-foofed quad USMPs with exposed and isolated die pads and die-pad attached feet.
Fig, 27D comprises "underside views of 8' arid l'O-footed ' rectangular-shaped quad USMPs with exposed and isolated die pads.
Fig. 28 A comprises underside views of 12-footed quad USMPs with exposed and isolated die pads.
Fig, 288 comprises underside views of 16-footed rectangular-shaped quad USMPs with exposed and Isolated die pads.
Fig. 29 A comprises an underside view of a 20-footed rettaagular-shaped quad USMP with an exposed die pad.
Fig, 29 B comprises an underside vi ew of a 20-footed recfenguiar-shaped quad USMP with an isolated die pad.
Fig. 30 A. comprises an underside view of a 48-footed quad USMP with an exposed die pad.
Fig. 30B comprises an underside view of a 48-footed quad USMP with an isolated die pad.
Fig, 30C comprises an underside view of an al ternate embodiment of a 48-footed quad USMP with an isolated die pad.
Fig, 31 comprises various views of a power USMP integrating a . multi-foot, package with an extended heat tab.
Fig. 32A comprises various views of a USMP including intra-lead tie bars.
Fig, 32B comprises an underside view of a USMP leadframe with intra-lead tie bars.
Fig. 32C illustrates the primary laser paths: For defining package leads and performing singulation of a quad USMP.
Fig, 32 D comprises an underside view of a USMP package with infra-lead tie bars 'after singulation.
Fig, 32E illustrates an underside view of a quad USMP illustrating laser tie bar removal.
Fig. 33A comprises an underside view of dual isolated pad USMPs utilizing intra- lead tie bars.
Fig, 33B compri ses an underside view of alternative embodiments of dual isolated pad USMPs utilizing intra-lead tie bars and isolated interconnects.
Fig. 34A comprises an underside view of a wave-soldembie heat tab power USMP including a thermal comb.
Fig. 34B compri ses an underside view of a wave-solderable heat tab power USMP leadframe including a thermal comb.
Fig, 34C illustrates the primary laser paths for defining package leads and perforrarag singulation of a power USMP with a beat tab.
Fig. 35A comprises an underside view of an alternative embodiment of a wave- solderable heat tab power USM P with a thermal comb.
Fig, 35 B comprises an underside vi e w of an alternative embodiment of a wave- solderable heat tab power USMP leadframe.
Fig. 35C comprises an underside view of a U SMP power package illustrating laser formation of a thermal comb.
Fig. 36A comprises an underside view of a wave-solderable heat tab power USMP with a bolt-hole.
Fig, 36B illustrates laser paths for forming a bolt hole in a wave-soiderable heat tab power USMP.
Fig, 37 illustrates a block diagram of various manufacturing flows for USMP leadframe plating.
Fig. 38 illustrates a cross sectional view of a USMP pre-plated power package leadframe.
Fig. 39 illustrates a cross sectional view of a USMP formed using plating after molding.
Fig. 40 illustrates sequential cross sectional views of USMP fabrication comprising selective leadframe plating.
Fig. 41 A ill ustrates sequential cross sectional views of PCB assembly of a USMP utilizing PCB solder printing.
Fig, 41B illustrates cross sections depicting potential manufacturing issues involving die tilt dining USMP assembly.
Fig. 42A illustrates a block diagram of various mamifacturing flows for USMP fabrication including solder printing.
Fig. 42B illustrates USM P cross sections of power and exposed die pad IC packages utilizing USMP preprinted solder.
Fig, 43 A illustrates a cross sectional representation of PCB U SMP assembly steps utilizing USMP pre-printed solder.
Fig, 43 B illustrates a cross sectional representation ofPCB assembly prior to wave-soldering, including both US MP power packages and USMP IC packages.
Fig. 43C illustrates a cross sectional representation of PCB assembly after wave- soldering, including both USMP power packages and USMP IC packages.
Fig, 44A illustrates USMP power packages with uniform and patterned preprinted solder.
Fig. 44B illustrates USMP integrated circuit quad packages, both with uniform and patterned USMP pre-printed solder.
Fig. 44C illustrates test probe placement using pre-printed solder of USMP fabricated packages.
Fig, 45 illustrates a cross section of an isolated die pad with customized conformal heater blocks required in USMP manufacturing.
Fig, 46 illustrates cross sections of two variants of isolated die pad USMPs utilizing a thermally conductive electrically insulating pre-mold compound.
Fig. 47 illustrates the fabrication flow chart of an isolated die pad USMP with a thermally conductive electrically insulating pre-mold compound.
Fig. 48 illustrates an alternative embodiment of isolated die pad USMP fabrication utilizing thermally conductive electrically insulating pre-mold compound.
Fig. 49 A illustrates an o verhead view of a saw type QFN3x3-12L leadframe and its corresponding footed USMP equivalent.
Fig. 49B illustrates an overhead view of a saw type QFN4x4- 16L- leadframe and its corresponding footed USMP equivalent.
Fig. 49C illustrates an overhead view of a punch type QFN4x4~24L leadframe and its corresponding footed USMP equivalent.
Fig. 49D illustrates a table comparing saw type and punch 4x4 QFN leadless packages with the 4x4 QFF footed package
Fig. 49E illustrates an overhead view of a saw type TDFN5x6-8L leadframe and its corresponding footed USMP equivalent..
Fig. S0A illustrates an overhead view of a conventional TO-252 (DPAK) leadframe and its corresponding footed USMP equivalent
Fig, SOB illustrates perspective and underside views of an alternative embodinieiit of a footed DPAK.
Fig. 50C illustrates perspective and underside views comparing conventional and footed DPAK packages.
Fig, SOD illustrates perspective views and one underside view of conventional, and footed DPAK packages.
Fig. 50E illustrates a table comparing a conventional, leaded DPAK to two footed DPAK packages.
Fig. 51 A illustrates an overhead view of a conventional SOT23 leadframe and i ts corresponding footed USMP equivalent.
Fig, 51 B illustrates a table comparing conventional and footed SOT23 packages.
Fig. 52 A illustrates an overhead view of a conventional TSSOP-SL leadiraroe and its corresponding footed USMP equivalent.
Fig, 52B illustrates an overhead view of an. alternative embodiment of a footed TSSOP-8L leadframe and package.
Fig, 52C illustrates a table comparing conventional and footed TSSOP-SL packages.
Fig. 53Ail.lustra.tes an overhead view of a conventional SGP-SL leadframe and its corresponding footed USMP equivalent
Fig, 53 B illustrates art overhead view of an alternative embodiment of a footed SGP-8L ieadftame and package.
Fig, 53C illustrates a table comparing conventional and footed SOP-8L packages.
Fig, 54A illustrates an overhead view of a con ventional LQFP7x7-32L ieadframe and its corresponding footed USMP equivalent.
Fig, 54B illustrates an overhead view of an alter native embodiments of conventional and footed LQFP7x7-32L leadfranies and packages.
Fig. 54C illustrates a table comparing conventional and footed LQFP7x7-32L leadfraines and packages.
Description of the invention
The above-referenced Application No. 14/056,287 and Provisional Applications Nos. 61/775,540 and 61/775,544 relate to inventive methods to make low profile wave-
solder compatible semiconductor packages for integrated circuits. These patent applications disclose methods to manufacture low-profile footed packages In the same semiconductor IC packaging facilities presently used to fabricate gull wing leaded packages such as the SOPS or SOT23. The patent applications also disclose methods to manufacture low-profile footed packages in facilities today used to manufacture leadless packages such as the QFN and DFN.
The above-referenced Application No. 14/703,359 relates to inventi ve methods to make lo w profile wave-solder compatible power semiconductor packages for discrete power devices such as the DPAK and D2PAK and other custom leaded packages adapted for power integrated circuits using the same factories used today to manufacture thick, i.e. high profile, packages with thick mechanically bent leads.
From these patent applications, low-profile wave-solder compatible "footed" packages can be manufactured in present day factories with minimal or investment, pursuant to the following limitations:
• Leaded IC package factories producing gull wing packages such as the SOPS and the SOT23 can be adapted to produce low profile footed versions of the same packages, but cannot be used to produce leadless packages or power packages without incurring significant expense for new equipment and tooling.
• Leadless IC package factories producing leadless packages such as the DFN and QFN can be adapted to produce low profile "footed" versions of the same packages compatible with wave-soldering to replace leaded IC packages of the same footprint (leadless packages are not), but cannot be used to produce power packages without incurring significant expense for new equipment and tooling.
• Power package factories producing discrete power packages such as the DPAK and D2PAK and power IC packages such as a power SOPS can be adapted to produce low profile "footed" versions of the same packages but cannot be used to produce leaded or leadless IC packages without incurring significant expense for new equipment and tooling.
The above bullet points highlight the fact that leaded package factories are fundamentally incapable of fabricating a diverse range of packages because each package
uses machine tools specific to a particular package. Package-specific equipment and tooling include:
* Stamping, punching, and trimming machines used in leadframe manufacturing
* The mold cavity tool (and possibly the transfer mold machine itself)
* Trim and form tools for lead bending, singulation, cutting, and dejunkmg, i.e. eliminating tie bars, rails, etc. after fabrication is complete
* Handling tools specific to each leadframe
* Pick and place machines to pick lip and pack the singulated packages
All the above listed machines are specific to a particular package and generally incapable of being used to manufacture other package types. This inflexibility forces each, package vendor to choose specific packages to serve a particular segment, of the market and that if opportunity or demand arises for a different package it is unlikely, if not impossible, for them to adapt their factory to accommodate the new package.
Even in the unlikely event that a specific production Hue can be adapted to support another somewhat similar package, for example converting a SOT23 line to a SOT223 line, the process is complex. To convert one package to another all the mold cavity tools must be swapped, the handlers must be changed, the trim and form machine must be converted, and even the mold machine temperature must be recalibrated. The effect of all these modifications is a loss of productivity during the equipment conversion process, lowering overall throughput, i.e. the factory's UPB or units per hour is reduced by the downtime. In economic terms, lower UPH means the cost per unit is higher, and the package company's profitability and competitiveness is adversely impacted.
So although the aforementioned patent applications disclose methods to upgrade leaded packages to low-profile footed packages offering absolute coplanarity for improved PCB manufacturing, and likewise provide a means to produce wave-solderable footed packages in a. factory previously incapable of producing anything but lead!ess packages, the disclosures do not fac ilitate a means to produce a pl ethora of packages in the same factory and with minimal or no cost in converting factory machinery and tooling.
The method disclosed herein overcomes this package- specific mamrfaeturing inflexibility by combining the following features:
• Dual-sided etched leadfratne
♦ Shared "block" mold for multiple packages and leadfiames
* Laser plastic and lead definition
Together these elements enable a single factory to manufacture a virtually unlimited combination of leaded, leadless, and power packages. Because of its ability to produce any number of different package types including
* Footed IC surface mount packages
* Leadless IC surface mount packages
* Footed power surface mount packages
• Leaded IC packages
• Leaded power packages
As such, the package disclosed herein is referred to as a "universal surface mount package" or USMP.
Btttii-Sided Etched Lmdframe A package of this invention may be fabricated from a leadframe with dual-side etching. Cross-sectional view 80 in. Figure 7A illustrates a copper sheet 90, having a thickness of 200,u.m or 500um, used to form the USMP leadframe. Through etching, or alternatively through stamping, the copper sheet is modified into four geometric pieces, or segments.
Copper sheet 90 is subdivided into four segments A, B, C and D. In cross- sectional view 81 of Figure 7 A, a mask 83 protects segments A and B but exposes .segments D and C to a backside etch, typically a. liquid acid solution for etching copper. After etching, copper sheet 90 is reduced in. thickness to produce cantilever section 92 while section 91 retains its full thickness. Alternatively,, if the topside of copper sheet 90 is also exposed to a. copper-etch, the entire sheet 90, including section 91, is reduced in thickness but cantilever section 92 is reduced proportionately.
In cross-sectional view 82 in Figure 7A, a mask 84 protects segments A and C but exposes sections B and D to a frontside etch. During etching, segment B in section 91 is thinned to form a foot 100B while segment D is completely cleared of all copper. If the etching occurs on only the- frontside, section 100 A in segment A and cantilever 1O0C in segment C remain unaffected. If however the etching occurs in an acid bath and the
backside of the copper leadframe 90 is unprotected, all sect ions am thinned proportionally.
The result of the fabrication sequence is four distinct, segments. Segment A comprises the full thickness of the copper sheet, i.e. 100%. Segment C comprises etched copper cantilever lOOC having a thickness at a fraction of the total thickness of copper sheet 90, e.g. 30%, having a top surface coplanar with the top of segment A. Segment B comprises etched copper having a thickness at a fraction of the total thickness of copper sheet 90, e.g. 30%, having a bottom surface coplanar with the bottom of segment A. Segment D comprises opening 101 D completely clear of metal.
The process flow for leadframe fabrication is shown in Figure ?B, starting with copper sheet 90 (step 95) followed by mask and backside etch (step 96A), mask and frofttside etch (step 96B), and finally the solder plating of the leadframe (step 97), where the leadframe is plated with tin, silver, nickel, palladium, or other solderahle metals.
Figure 8A illustrates the design parameters for etching copper sheet 90, shown in cross-sectional view 85. in order to preserve copper in cantilever section C and foot section B while clearing all the metal in section D, the sum of the frontside etch and backside etch must exceed 100%, preferably with a 10% overetch. For example, in cross- sectional view 86A the froni-side-etch removes 70% of the copper to form foot Ι.00Β while backside etch removes 70% of the copper to form cantilever lOOC. This
embodiment of the invention produces equally thick cantilever and feet sections.
Alternatively the front- side-etch removes more than the backside. As shown, in cross section S6B, the front-side-etch removes 70% of the copper to form foot 100B while backside etch removes 40% of the copper to form cantilever lOOC. This version produces a thick cantilever I00C and a thin foot 100B. In another embodiment the backside etch removes more than the front-side. As shown in cross section 86C, the front- side -etch removes 40% of the copper to form foot 100B while backside etch removes 70% of the copper to form cantilever lOOC. This version produces a thin cantilever lOOC and a thick foot lOOB.
To insure the copper clears in sections where it should be removed the sum of the front and back etches must exceed 100% of the copper thickness. If the two etches are similar in time but do not exceed 100% of the starti ng copper thickness, unintended metal
bridge 89 results as shown in cross-sectional view 87A of Figure 8B. If the top etch is of short duration and the backside etch is of a long duration but. together the etches do not. exceed 100% of the starting copper thickness, unintended metal bridge 89 results., as shown in cross-sectional view 87B. If the top etch is of a long duration and the backside etch is of a short duration but together the etches do not exceed 100% of the starting copper thickness, unintended metal bridge 89 results, as shown in cross-sectional view 87C.
The process of lea.drra.me manufacture in accordance with this invention enables a variety of useful geometries to be fabricated shown in Figure 9A, including a column 100 A comprising segment A; a foot I00B comprising segment B; a cantilever lOOC comprising segment C ; a haif-T-shape 100E comprising the combination of segments A and C; an t-shape 100F comprising the combination of segments A and B; and also a Z- shape 1O0G comprising the combination of segments C, A, and B. Other useful geometries shown in Figure 9B include an inverse T-shape 1004 comprising the combination of segments B, A, and 6; a T-shape- 100 J comprising the combination of segments C, A, and C, a U-shape lOOL, comprising the combination of segments A, B, and A; and also an inverse U-shape 100K comprising the combination of segments A, C, and A.
Other useful geometric shapes fabricated by the disclosed process and shown in Figure 9C combining copper elements and intervening gaps include geometry 10.1 M comprising columns A and intervening gap A; geometry JOIN comprising cantilevers C and intervening gap€; geometry 10IP comprising feet B and intervening gap B-; and also geometry 101.Q comprising column A, foot B, and intervening gap AS. Similarly in Figure 90, geometry 101R comprises column A, cantilever C, and intervening gap AG; while geometry 101 S comprises foot B, cantilever C, and. intervening gap &&. These various geometric elements are used to construct the Seadframe and package features as disclosed herein.
Block Molding for leaded & leedtess Packaging Another important element, of the USMP is the elimination of the need for package-specific mold cavity tools. Instead of localizing the plastic molding around each specific product, in the USMP process
plastic is used to encapsulate 'all. the products .hi a common ieadframe or divided portions thereof, i.e. "block" molding. By encapsulating large blocks of a leadirame concurrently, the need for package-specific mold tools is eliminated. As a result, many products may be manufactured on a single Ieadframe concurrently from a common mold cavity tool, one shared with other package types and leadframes.
For example. Figure 10A illustrates an IC Ieadframe 105 designed for USMP fabrication comprising IC dice and individual leadirame patterns 106, Ieadframe rails
108, and Ieadframe cross rails 107. Figure 10.B illustrates USMP Ieadframe 105 encapsulated by a single plastic block mold 109. Figure IOC illustrates USMP Ieadframe 105 and block mold 109 in cutaway view revealing multiple arrays of iC dice and individual ieadframe patterns 106 contained within. Figure 10D illustrates USMP ieadframe 105 covered by three distinct blocks of plastic I I OA, HOB and HOC collectively comprising a USMP segmented block mold. Depending on the laser plastic removal and singulation process, the same leadirame can be used to fabricate either footed or leadless IC packages.
Using the USMP process and methods, the same leadirame used for ICs can be adjusted to fabricate power packages as well. For example. Figure 10E illustrates an USMP power discrete Ieadframe 1 11 comprising power semiconductor dice and individual Ieadframe patterns 1 12, Ieadframe rails 108, and Ieadframe cross rails 107. Figure 10F illustrates USMP Ieadframe 1 1 1 encapsulated by a single plastic block mold
109. The drawing of Figure 16G illustrates USMP ieadframe 1 1 1 and block mold 109 in cutaway view revealing multiple arrays of power semiconductor dice and individual Ieadframe patterns 1 12 contained within. Figure 10H illustrates USMP ieadframe 1 11 covered by three distinct blocks of plastic 1 10A, 1 JOB and 1 IOC collectively comprising a USMP segmented block mold for manufacturing power packages.
While block molding is used in leadless QFN manufacturing, except for the USMP process disclosed herein, block molding is fundamentally incompatible with leaded IC packages and power packages.
Laser Plastic and Lead Definition, Singulation O ne adverse consequence of block molding in prior art package technology is that there is no means to produce a
leaded package., i.e. the process of singulation on a block moid Invariably results in a leadless package, one where no leads protrude laterally past the plastic's edge, in other words, in present day packaging, conventional methods used to rapidly remove plastic front the street naturally and unavoidably cuts the metal leads as well and vice versa. For example, during p unch singulation, the sharp edges of a mechanical die punch cuts entirely through both the plastic and the copper leads, severing each package from its neighbors and leaving the vertical sidewalls of metal and plastic flush with one another. Similarly dining saw singulation, the saw blade cuts completely through both the plastic as well as through the copper leads, severing each package from its neighbors and leaving the vertical sidewalls of metal and plastic flush with one another. Practically speaking there is no way to employ mechanical means to remove plastic without cutting the metal.
While conceivably, wet chemical means to remove plastic without etching the metal leads may be possible, the process of wei etching plastic is slow, imprecise, and expensive. The corrosive chemicals needed to perform the plastic etching also can damage, oxidize, or corrode the metal leads, affecting package reliability and lead solderability, Ionic chemical byproducts of the etching process can seep into the package, affecting the electrical stability of the package device or integrated circuit. As an alternative, plasma etching, i.e. dry etching, of a finished package product can cause ionic charges to accumulate in the package and on the semiconductor dice, affecting device operation and electrical characteristics. Moreover, chemical etching, whether wet or dry,, requires added costs involving masking to define where the plastic is to be etched and where it is to be removed. Aside from its adverse expense, masking a molded leadframe is not performed today and an entirely new set of tool s and processes would have to be developed before such methods could be applied. As such, chemical and mechanical methods to etch a package street are not practiced, and singulation by saw or punch represents a standard method.
In the disclosed USMP process flow, however, unwanted plastic is removed from the street between die by a laser process wherein the energy of a l aser is preci sely control led, to facil itate p l astic removal without damaging or cutting the copper leadframe. After laser removal of the plastic, the copper leads may then be cut by punch, saw, or in a preferred embodiment also removed by laser. If a laser is used for both plastic removal
and copper lead cutting, then the laser's positioning can be adjusted to create either leadfess, leaded, or power packages in the same manufacturing line.
One example of the USMP process for plastic removal and lead cutting, i.e.
"street fabrication", is illustrated in Figure 11A. The three cross-sectional views illustrate packages for two adjacent dice, i.e. package A and package B and the intervening street: between them delineated by dashed lines, during three successive fabrication steps.
Cross-sectional view 120 illustrates the step just after molding where plastic- 127 A and copper conductor 128 A extend between package- A and package-B through the intervening street. Plastic also fills the visible underside portion 131 A of package A and B I B of package 6
The second drawing, cross-sectional view 121, illustrates the use of a laser beam 130A to remove the portion of plastic .127 A from the street, i.e. between the dashed lines, and in addition to remove portions of plastic 127 A .on both sides of the street, i.e. atop copper conductor .128A within package A and within, package B, while the plastic encapsulating the die is retained and remains unaffected, i.e. a plastic capsule I27B survives the process and continues encapsulating package-A, and a plastic capsule 127C survives, encapsulating package-B. To control what plastic is removed and what plastic is lei! undisturbed, laser 130 A is optically scanned.
Optical scanning involves parametrically controlling the locations to be lased, adjusting the power and pulse frequency of the laser, and varying the scan rate and number of repeated laser scans performed oil a given area. The peak laser power needed, for plastic removal varies from 5W to 20W. For any given peak power setting, the average laser power delivered is controlled by pulsing the laser for a prescribed duration ion at a fixed frequencyt resulting in duty factor D where D - 1™ * and where the average powered delivered Pav¾ is given by Pave ~ P * D ~ P * (t*« * fpaise). For example a 20 W laser running at 20kHz pulse rate and a 50% duty factor, has an on time of 25^tsec for every 50|tsec pulse period, delivering an average power of 10W.
The laser's wavelength is adjusted to maximize its absorption by the material being removed. In the case of black colored plastic, virtually any infrared, visible light, or •ultraviolet- laser of sufficient power , e.g. in the 10W to 20W range, may be used to melt and evaporate the relatively low melting point of the plastic mold compound. When
removing plastic sitting atop copper, however, it is beneficial to employ a laser, wavelength that Is absorbed by plastic but less so by the underlying copper leadframe metal, meaning at lower power levels, plastic can. selectively be removed from the street without melting, burning, or scarring the underlying metal. Compared to black plastic, because of the relatively optical low absorption by copper and other "yellow" metals, laser wavelengths attractive for selective plastic removal made in accordance with this invention include infrared gas lasers such as CO2 at 10.6pm, or infrared solid-state or fiber lasers such as Y AG at 1064nm.
To further a void scarring of the underlying copper during laser plastic removal, the required laser power may be reduced by rapidly and repeatedly scanning the same area with the laser, whereby the total energy Escaa delivered ΐο one specific "slice" of plastic to be removed is equal to the average laser power Pave, described previously, times the time required to scan across the slice tscan times the number of times a given slice is scanned n«as, i.e.
By employing the proper wavelength for the material being removed, the number of scans η∞βη can be minimized, typically from 2 to 5 scans. If however a laser having a. wavelength poorly matched to the materia! being removed is used, from 10 to 30 scans may be required on each Sased slice. A large number of repeated scans per slice, i.e. η∞»η > 5, is undesirable because it increases processing time, lowering processing UPH, and increasing the risk of scarring the metal or burning of adjacent material in the package. For example, a UV or blue laser used to cut copper may require only 3 or 4 scans to remove a 200μ m copper leadframe. while an infrared laser such as YAG or CO2 may require 10 or more scans, resulting in burn marks on the leadframe.
The scanning rate
should not be confused with the aforementioned laser pulse frequency and the laser pulse duration ¾>«, which occur at rates at least one or two orders-of-magnitude faster than laser scanning, lo micromachining, laser pulses are controlled electronically in the microsecond range, while optical scanning of lasers is performed using motors and movable mirrors. One-dimensional scanning, i.e. producing a outline along a straight line, can be performed with a single mirror system while two-dimensional scanning requires either using a single minor rotated on two axis, or by employing two mirrors ~ one for deteraiinrag the x-axis position control and the
other for y-axis control Mirror positioning can be accomplished using precision adjustments with stepper motors or using continuous drive rotating motors with the laser pulses occurring only when the mirrors are directed toward the area to be lased.
importantly, because the laser and its operating settings are tuned for plastic removal, after plastic removal, copper conductor 128A continues to hold all dice in place in the leadframe, undisturbed by laser BOA.
To estimate the process throughput, laser scan rates must be considered. Linear scan rates can reach 5,Q00mm/s but for precision is slowed to around 400 to 500mm/s. For a 40mm wide plastic bl ock, this means a single scan across the wi dth of the block mold takes approximately 0.1 s. By repeating 4 scans on one slice and breaking a street into 7 slices, a total of approximately 30 scans can clear one street in the width- wise direction, i.e. requiring roughly 3 seconds to clear the plastic from each street, if a 40mm wide block is roughly 40mm long, then a 3x3mm product results in a molded block comprising 15 horizontal, and 15 vertical streets, or 30 streets in total.. At 3 seconds per street, the block can be cleared of plastic in 90 seconds, i.e. in 1.5 minutes. Assuming four blocks per leadframe, a total of 6 minutes are required for plastic removal. Smaller packages take longer because there are more streets to clear for any given block's area. Conversely, larger packages may be processed, in shorter times in proportion to the lower street density.
In the third step, shown in cross-sectional view 122 of Figure 11 A, a different laser process, laser 130B, is optically scanned to remove copper conductor 128 A from the street, i.e. between the dashed lines. After lasing, copper lead 128B extends under plastic capsule 127B while copper lead 128C extends under plastic capsule 127C. Leads .128B and 128C axe separated by the street. These and other copper conductors protruding from the plastic package body (but not shown in this particular cross section) collectively comprise the conductive feet of the disclosed footed package. The conductive leads have the same Z shape as the aforementioned geometry 100G, As shown, plastic capsules I27B and I 27C cover the top portions of these leads but not the sidewall or feet, which are exposed. By removing metal 128 A from the street, not only are the conductive feet formed but also the packages are mechanically separated from the leadframe and from
one another. Laser .130B, therefore fabricates the package feet as well as perfbrniing product singulation.
To minimize the power and duration during metal, cutting by improving optical absorption by yellow metals such as copper, laser DOB ideally comprises a shorter wavelength than laser 130A. Short wavelength lasers, comprising solid-state or .fiber lasers, include yellow-orange lasers at 593 Jnm, green lasers at 532am, blue lasers at 473nm, blue- violet lasers at 405nm, or ultraviolet lasers at 37Snm, 355nm, 320nm, or 266nm. While exeimer lasers, utilizing excited diraers of noble gases such as xenon, .krypton, fluorine, and argon to realize ultraviolet wavelengths are commonly employed in semiconductor manufacturing and delicate surgeries, such precision and higher associated costs are not generally justified for package fabrication. Using the appropriate wa velength laser, throughput of metal removal and package singulation can. be even faster than plastic removal.
In an alternative embodiment, laser 'BOB is replaced by mechanical sawing. In this alternative fabrication sequence, laser BOA is still used to remove the plastic from the street and to uncover the feet, but mechanical sawing defines the length of the feet and performs singulation. This version of the process, while able to re-use existing mechanical sawing equipment, is less accurate than the laser process, and subjects the products to greater mechanical stress during processing. The resulting package is inferior, having greater variability in the length of the conductive feet, and greater risk of plastic cracking. Moreover, care must be taken to control die saw rate and to replace the saw blade frequently, or the saw may damage the metal and bend the feet.
Although the disclosed two-laser process for street fabrication can be utilized to produce footed packages as shown in the prior drawing, Figure 118 illustrates the technology can also be applied to produce leadless packages. Starting with the same cross-sectional view 120 immediately after molding, in cross-sectional view 123, laser 130A is used to remove plastic only from the street. After laser 130A processing, plastic capsule 127B encapsulates die- A and plastic capsule I 27C encapsulates dle-B but conductive copper 128 A is uncovered only in the street. As in the previous example, plastic 1.27 A is removed only in the street by controlling the laser positioning dining scanning.
In cross-sectional view .124, a second laser process, laser 13 OB typically having a higher power and energy rating than laser 130A, is used to cut and remove copper conductor 128 A from the street. Because plastic removal by laser 130A and metal removal by laser BOB both have the same edge as defined as the edge of the street, then the resulting plastic and metal form a flush vertical wall at the package edge. As shown, conductive copper lead 128B is flush with plastic capsule 1278 defining the vertical edge ofdie-A, identical in cross section to a conventional sawed leadless QFN or DFN package. Similarly, conductive copper lead 128C is flush with plastic capsule 127C defining the vertical edge of die~B. Street fabrication and die singulation in the USMP process using lasers is superior to sawing in conventional QFN fabrication because of improved accuracy, reduced stress on the package plastic, reduced risk of plastic cracki ng, smoother package edges, and reduced risk of metal-to-plastic delamination.
Beyond its improved quality and manufacterahility, the USMP process is able to fabricate both footed and leadless packages in the same factory and manufacturing line with no retooling required. The USMP process is universal because it can make both wave-solder compatible leaded, i.e. "footed", packages as well as leadless QFN and DFN packages using a flexible block mold process, in contrast, the conventional saw or punch type QFN process can only manufacture leadless packages - packages incompatible with low cost wave-solder based PCB factories.
Simp ly by c hanging the locati on and scanning of the lasers, one. common manufacturing line can fabricate a wide variety of street and capsule edge designs for footed and leadless packages. For example, in Figure 11C, an alternate capsule edge design where plastic covers the sidewalls of the Z-shaped leads 100G is possible. Starting with the same cross-sectional view 120 after molding laser 13GA is used to remove plastic from the street and exposing the foot portion of conductive copper 128 A but not. the vertical side-wall of Z-shape geometry ! QOGtview 125). Laser BOB then cuts the portion of conductor 128 A in the street but preserves a foot of conductive lead 12 SB in die- A and a foot of conducti ve lead 128C in die-B (view 126).
As illustrated in Figure 12A, by controlling the lateral energy profile of laser 130B, the resulting shape of the feet of conductive leads 128B and 1.28C can be adjusted. For example if a square energy profile 136 of energy E versus position y shown in graph
135 is used, the resulting feet will retain a square shape. If however, a smooth-edged energy profile 138 shown in graph 137 is used, the edges of the feet 'of leads 128B and 128C will be rounded 129. facilitating easier solder wiek.bg during PCB assembly. The energy E is a combination of the average pulse power and the number of repetitive scans rastered across the same location. More scans in the same location, higher power during lasing, longer pulse durations or higher duty factors increase the delivered energy while fewer scans, lower power, shorter pulses or lower duty factors decrease the delivered energy. By controlling the power and energy the removal of metal ions by the laser is a controllable parameter, a benefit not possible using prior art punch and sawing techniques.
As stated previously, black plastic used in semiconductor packaging is readily absorbed by the entire spectrum of light wavelengths ranging from UV to infrared.
Copper and other yellow metals, however, reflect various wavelengths, poorly absorbing the impinging laser beam. In manufacturing, poor laser absorption causes a large number of scans resulting in a low UPH throughput. Reflection is also dangerous, risking damage to the laser head from the reflected beam, and in badly designed equipment even posing a safety hazard to operators.
Figure 12B illustrates the absorption spectra, i.e. a plot of absorption on the y~ axis versus light wavelength on the x-axis, for a variety of common metals. Infrared lasers such as CCte gas laser wavelength 141 A at 10.6pm and Y AG fiber laser wavelength .141 B at i064nnvare contrasted to visible solid-state laser wavelength 141.C at 532nm and UV solid-state laser wavelength 141 D at 355nm. As shown, steel and iron (Fe) are easily absorbed in the infrared spectra over 1 pm. in contrast, yellow metals including copper 140, gold, and silver absorb poorly in the infrared, with high absorption of light shorter than 600nm, i.e. in the UV and short visible spectrum. Using this graph, the USMP process can be optimized whereby
* Plastic is removed using infrared laser over 1 pm, e.g. with a Y AG fiber laser at 1064.51.01, .resulting in evaporation of plastic with minimal absorption by the underlying copper leadframe
• Metal is removed for defining package feet, singulating die, and de-junking of tie bars using a. solid state UV or visible light laser having a wavelength shorter than
600nm, e.g. a yellow-orange laser at 593.5nm, green at 532xtm, blue at 473nm, blue-violet at 405nm, or ultraviolet lasers at either 375nm, 355nm, 320nro, or 266nm.
Using precision servo-controlled mirrors at a sufficient distance from die stage holding the leadframe to be processed commercially, available lasers are able to cover large areas without moving the laser head or the stage. So although it is possible to process a leadframe in blocks and (hen advance die stage mechanically, it is not necessary. By scanning the beam in accordance with USMP method, after loading, an entire leadframe 80mm by 250mm can be processed without moving the laser head or the stage. Laser processing of a leadframe is illustrated in Figure 12C where laser head 142 scans a laser beam across leadframe 105 comprising copper leadframe 108 and three block molds comprising plastic blocks 110A, 110B and I IOC. Hie intervening regions 107 represent the support rails 107 of the leadframe.
!n the example shown, each block is lased in succession, starting with block 11 OA processed by laser scan 143 A, secondly with block 110B processed by laser scan 143B, and lastly for block 1 IOC processed by laser scan 143C. If different types of lasers are employed for plastic and copper removal, it is necessary to unload the processed leadframe from one laser first for plastic removal and transfer it to another for lead definition, copper removal, singulation, and tie bar de-junking. So the entire process of laser patterning each block mold in succession wilt occur twice, once for plastic removal, and a second time for metal removal.
The size of a block is arbitrary, based on providing adequate mechanical support to the leadframe with rails and cross-rails to prevent sagging or bowing of the leadframe during manufacturing and handling. While the number of blocks may vary from 1 to any number, typically 3 to 12 blocks are sufficient to provide adequate support yet manufacture most package types with a large number of units per leadframe. If the blocks are too small, the block may not be an even increment of the package dimension, i.e. pitch, and useful leadframe area will be lost Each block may take from 1 to 15 minutes to process depending on the size of the block and the pitch of the package being fabricated. Finer pitch packages contain more streets and take more time to process. Nominally, one leadframe can be processed in 10 to 20 minutes.
Aside from selecting the proper wavelength lasers for plastic and copper removal, the USMP manufacturing process can be optimized by the scanning algorithm employed in street fabrication. Rastering the laser beam by rows in a manner used fay DLP movie projection and LCD TVs is an inefficient method because most of the leadframe retains plastic and does not require laser processing, instead it is preferable to process only the areas requiring lasing, for example by lasing the horizontal streets first as shown in Figure 12D, then lasing the vertical streets as illustrated in. Figure 12E. Leadframe 105 illustrates a footed package with 12 feet, three on a side. During plastic removal beam scan DO A removes plastic in the horizontal streets; then beam scan DOC removes the plastic in the vertical streets. After plastic removal, in a similar manner laser removal occurs orthogonally where beam scan DOB removes copper in the horizontal streets; then beam scan 1 SOD removes the copper in the vertical streets.
As described previously, in the USMP process the difference in the. width of the plastic removal beam scan 130.4 and the copper removal beam ...width DOB determines' the length of the package's feet. Each laser scan actually comprises multiple horizontally displaced "slices" of the material being scanned. For example as shown Figure 12F, plastic removal beam 130 A comprises 10 separate scans 145 A through 145 J, and laser copper removal beam 'BOB comprises 7 separate scans 144.A through 144G, each comprising a laser beam having a spot size 146 of 44μηι. While smaller spots are possible, spots of 20pra to 50μηι are preferable to reduce the number of slices required in laser scanning. Too large a spot, size, however, is not preferred because it limits a package's feature resolution. The slices can overlap slightly without any adverse effect, and in feet it is preferable to have them overlap slightly. With no overlap, seven slices each 44μηι wide would result in a plastic cut 308pra but the total width of copper removal beam DOB is only 300μηι. Non-overlapping laser beams are problematic as residual metal and plastic and metal may survive the street fabrication process and result in defective product.
The resulting footed package from leadframe 105 is shown in Figure 12G comprising laser-defined plastic body 1 10Z and conductive feet 147, For reference;, the locations of horizontal laser copper removal beams DOB and vertical laser copper removal beams 130D are included.
In manufacturing four sided footed packages special consideration mast be given to how to remove tie bars during lead formation and singulation. Tie bars (exemplified by tie bar 148 in Figures 12G and 12H), extra pieces of metal used to stabilize the leadftarae and to hold the die pad in place during manufacturing naturally protrude from the package's plastic body. In conventional leaded packages, tie bars are mechanically clipped off and the extra pieces metal removed, i.e. "de-junked" during the singulation process. The process, while applicable to the USMP is not preferred because it adds mechanical stress during the manufacturing process, requires additional equipment, and oftentimes results in a small protrusion of metal outside of the plastic potentially as shown in DPAK perspective view 45J shown in Figure 31.
In the USMP process for fabricating four-sided footed packages, the rectilinear laser algorithm comprising horizontal and vertical slices results in an unwanted artifact, a remaining segment of tie bar 148, which forms a: copper cantilever protruding from the die pad's corners. This artifact can be eliminated using the same laser process by augmenting the laser scan pattern. As shown in Figure 12H augmenting the combination of horizontal laser slices 144 A through 144G to include extra slices 149A through I49D removes the tie bar 148 artifact To protect the package plastic from the laser, this laser scan is not continuous, but lasing occurs only for a short duration so as to direct the laser beam only at the top of tie bar 148. Alternatively, tie bar removal can occur as a step that is separate from the formation of the metal feet.
Concurrent Fabrication of Footed, Power, and LeaMess Packages In accordance with the USMP process and packages disclosed herein, both leaded and leadless packages can be fabricated on the same manufacturing line, even concurrently. A block diagram flow chart of the manufacturing process is shown in Figure 13 comprising the steps starting with a patterned leadframe (step 150) fabricated in a manner disclosed previously in this application, followed by solder or epoxy die attach (step 131), optional clip lead attach process (step 152) and wire bonding (step 154). As shown by path 153, clip-lead process (step 152) may be skipped if the semiconductor is not a high current discrete device. After wire bonding, plastic-molding (step 155) is performed using either
separate mold cavities or preferably using block molding, i,e, one mold sheet
encapsulating many devices. Following molding, laser plastic and lead definition, singulation (step 159) is performed, comprising selective plastic removal using a laser (step 156), followed by laser lead definition (step 157} and tie bar cutting (step 158), The singulated dice are then ready for a pick and place machine to perform testing and packing onto tape and real or waffle packs as required.
Figure 14 A through Figure I 4J illustrates the concurrent fabrication of a leaded power package, specifically a fooled power package, and an 1C package comprising either a footed or lead! ess package using the same USMP process. Provided that a leadframe of the same thickness is used for both leaded and leadless devices, the same USMP process is capable of simultaneously fabricating these dissimilar package types on a common line simply by changing the leadframe design. No other change in processing or mechanical tooling is needed, if the leadframe thickness and plastic mold cavity thickness is changed, etch times most be adjusted accordingly.
Figure 14 A illustrates a cross- sectional view of two copper sheets, copper sheet 170A shown as the upper illustration used for fabricating a footed power device package and, copper sheet 17GB shown as the lower illustration used for manufacturing either a leadless or footed IC package using the USMP method in accordance with this invention. For the sake of illustration, the dotted lines identify the vertical column 100A, later used tq.fprm the package's die pad, the L-shaped geometry I00F used to form the foot to a power package's heat tab, the Z shaped geometry 100G used to form the packages' conductive leads and feet, and die etched geometry 101 R used to electrically separate the packages ' conductive leads from their die pads. The thickness of copper sheet 170 A can vary from 20Ομ«ι to 700μηι, with 500μ∞ being a common thickness for good heat, spreading. The thickness of copper sheet 170B can vary from 50μηι for smart card applications to 300um for power ICs, with 200μη¾ being a common thickness for most integrated circuits.
The upper figure of Figure 14B illustrates backside etching of copper sheet .1.70A. during leadframe fabrication of a footed power package, where mask 1 71 A comprising photoresist or chemical etch resistant coating with window 172 A open to define area for copper etch ing. Similarly the lower figure of Figure 14B illustrates backside etching of
copper sheet 170B during leaci frame fabrication of a leadiess or footed IC package, where mask 17 IB comprising photoresist or chemical etch resistant coating includes windows 172B and 172C open to define area for copper etching. The copper is then etched through windows 172 A, 172B and 172C using wet chemicals or dry etching as described previously.
The upper figure of Figure 14C illustrates copper sheet 170 A during leadframe fabrication of a footed power package just prior to front-side etching. As shown copper sheet 170 A. includes backside etched cavity 173 A resulting from the previous backside etch step, coinciding with mask window 172 A (Figure 14B). To define areas for front- side copper etching, mask 174 A comprising photoresist or chemical etch resistant coating including windows 175 A, 175B, and 175C. Similarly, the lower figure of Figure 14C illustrates copper sheet 1.70B during leadframe fabrication of a leadiess or footed IC package just prior to front-side etching, including backside etched cavities 173B and 173C resulting from the backside etch process corresponding to previous backside mask, features 1728 and 172C (Figure 148). To define the area for front-side copper etching, mask 174B comprising photoresist or chemical etch-resistant coating includes windows 175D, 175E, 175F and 175G.
After masking, the copper is then etched through windows 175 A through 17SG using wet chemicals or dry etching as described previously. While the etching sequence is shown with backside etching-occurring before front-side etching;, the sequence may be reversed without changing- the resultant leadframe. Regardless of the sequence, the resultant leadframe is illustrated in Figure 14D in the top illustration for the footed power package, and for the bottom illustration for a leadiess of footed IC package. After front- side copper etching, mask window 175 A, 175C, 175D and I75G results in corresponding feet 183 A, 183B, 183C and 183D also connecting to other devices in the leadframe to facilitate mechanical support.
Also during front-side etching, openings 175B, 175E, and 175F merge with backside etched cavities 173A, 173B and 173 C (Figure J.4C) to form gaps 185A, I.S5B and 185C, cantilever leads 18IA, 1 S1 B, and 18 IC, vertical columns I82A, 182B, and 182C and backside cavities 184A, 184B and 184C The combination of cantilever 181 A, vertical column 182A arid foot 183B form the aforementioned Z-shape geometry 100G
•characteristic of an independent conductive lead electrically disconnected fr om die pad ISOA by gap 1 S5A in a footed power package made in accordance with the US MP process and design.
In an 1C package, die combination of cantilever I81B with vertical column 182B and foot 183C, and similarly the combination, of cantilever 18 IC wi th vertical, column 182C and foot 183D, form the same aforementioned Z-shape geometry 100G
characteristic of an independent conductive lead electrically disconnected from die pad 18GB by corresponding gaps 185B and 185C. While the various ieadfraine elements in the drawing appear independent Scorn one another, they are all attached to one another as pan of a single interconnected leadframe through feet 183 A, 183B, 183C, and 183D and other copper pieces not visible in this specific cross section. The feet in turn connect to leadframe rails to secure the entire structure mechanically for processing. In the case of die pad ISOB not connected to any conductive leads or feet, the die pad must be held in place through the use of temporary tie bars constructed as cantilevers similar to geometry 10OE and cut flush with the package's plastic during singulation.
in Figure 14E, semiconductor die 190A, comprising a power device or power IC is attached to die pad 180 A by conducti ve epoxy or solder 191 A while semiconductor die 190B comprising an IC is attached to die pad 1 SOB through conductive or non- conductive epoxy layer 191 B. Unless a device conducts current vertically through the backside of a semiconductor die, it is -undesirable to employ solder as a die attach material because the semiconductor die requires backside metal applied to the wafer's backside during fabrication after thinning, adding unnecessary extra cost and complexity into the semiconductor fabrication process.
in Figure 14F, bond wire 195 A connects semiconductor die 190 A to cantilever !SIA; bond wire 195B connects semiconductor' die 190B to cantilever 18 IB, while bond wire 195C connects semiconductor die 190B to cantilever 181 C. Other bond wires connect to other conductive leads and feet but are not visible in this particular cross section. While, as shown, more than one bond wire may be attached to the same surface of a semiconductor, the electrical potential, signal or e lectrode contacted by the bond wire may be the same or may he distinct and different, in the case of power devices
-conducting very 'high current, -'bond wires may be replaced by a copper clip lead as described previously.
In Figure 14G, the leadframe is molded with plastic 196 A and I96B. Depending on the mold cavity tool, the plastic may be molded around each separate die -or preferably using one to five large blocks of plastic containing more than one product per block. Depending on the product's die and package size, the number of products fabricated from one common block moid could range from a few units to thousands. In a block mold the plastic covers the entire block including the street and die edges atop feet I SA, 183V, 183C and 183D as well as filling backside cavities 184A, I84B, and 184C and gaps 185 A, 185B, and 185C. The thickness of the plastic must also be sufficiently thick to folly cover and encapsulate any bond wires 195A, 195B and 19SC or any copper clip leads.
fat. the step of laser plastic removal shown in Figure 14H, laser beam 198 A is scanned to selectively remove portions of plastic 196A and 196B. In the case of a footed power package shown in the upper illustration, the plastic is removed over metal sections atop feet 183 A and 183B, over a portion of die pad 180A herein referred to as heat tab 180C, and exposing a small portion of vertical column 182A. In the case of a leadless or footed IC package shown in the lower illustration, the plastic is removed over metal sections atop feet 183 A and 183B, the removal area extending onto and exposing a small portion of vertical columns 1S2.B and 182C.
In the case of laser plastic removal on a block mold, the laser and not the mold cavity tool define the lateral dimensions of the package plastic. For example, using different leadframes, a single block mold can be used to fabricate a range of products comprising IC packages at 2x2mm, 3x3mm, 6x6mm, 2x3.mm, 3x5mm or any package shape with leads on two or more sides, or to produce discrete transistor and power packages such as the SOT23, DPAK, and D2PAK. Alternatively, if a product specific mold is employed, the step of laser plastic removal can be skipped or used to augment the design after molding for purposes of package customization. Provided that the .thickness of the plastic- thickness 196C and I960 the same laser settings can be used for fabricating both IC and power packages, if, however, the power device has thicker plastic than the IC
package, then the power setti ng for laser pl astic removal of the power package must be increased accordingly.
Finally, as shown in Figure 141, in the step of laser lead definition and singulation, laser beam 199 A is used to remove metal feet 183 A, 183 B, 183C and 1830 from the street and to form wave-solder compatible feet of controlled lateral length and shape. For example, in the footed power package in the upper illustration, the length of foot 1 S3F and others (not shown) is defined by laser beam 199A. Also foot 183B extending from heat tab 180C is defined by the same laser beam 199A. Similarly in tire IC package shown in the lower illustration as a footed package, laser beam 199A is used to remove all metal from the street and to define the length of feet 183G arid 1 S3H.
Alternatively, if a mechanical saw or punch is employed* the laser lead definition and singulation can be eliminated by its .mechanical equi valent. While compatible with the USMP process flow, mechanical solutions are inferior since they result in die stress leading to plastic cracking and residue, i.e. plastic Hash that must be etched off.
Mechanical solutions are also subject to mechanical wear, resulting in variability in the foot length.
Provided that the thickness of feet 183E and 183F is the same as the thickness of feet 183G and 183H, the same laser settings can be used for fabricating both IC and power packages. If, however, the power device has thicker metal feet than the IC package, then the power setting for the laser cutting of the metal feet in the power package most be increased accordingly.
Using lasers offers significant advantages over today 's conventional mechanical methods because it enables footed and leadless packages to be fabricated in the same manufacturing Sine. In the uni versal surface mount package flow as described, a leaded or leadless package is determined by the relative position of the lasers for plastic removal and metal definition. For example if the width of the cut made by laser beam 199 A is smaller than the width of the cut made by laser beam 198 A, then a footed package will result whereby metal feet extend laterally beyond the plastic edge, if, however, the edges of the respecti ve cuts made by laser beams 198 A and 199 A are- aligned, the pla stic and metal will exhibit a vertically aligned flush sidewal! with no metal protrusions.
In this manner, the lower illustration shown in figure 141 can be converted from a footed package Into a leadless package simply by changing the scanning locations of laser beams 198 A and 199 A, as shown in Figure 14 J.
USMP Packages The universal surface mount package technology and process disclosed herein facilitates a flexible and diverse range of package types comprising both leadless and footed packages including footed 1C packages, footed power IC packages, and footed discrete power packages. Footed USMP IC packages and footed USMP power IC packages share the common feature of having multiple electrical connections or "feet" but differ in the fact that the semiconductor die contained in an IC package normally comprises analog, digital, memory, or microcontroller functions that generally do not carry high current or dissipate substantial amounts of power while power IC packages contain semiconductor dice that do.
Po wer IC semiconductor dice include analog and / or digi tal control circuitry combined with arrays of one or more high-voltage or high-current switches, voltage regulators, switching power supplies, current limiters, motor drivers, solenoid drivers, lamp and LED dri vers, and other interface products. While in some cases, the tooted USMP IC packages may be used for both power and non-power applications, in. other cases, power IC specific U SM P packages may also he reali zed by any of a variety of techniques including;
• Increasing the heat sinking and heat spreading capability of the USMP package by using thicker leadframes, exposed die pads, and heat tabs soldered to a PCB
• Reducing oil-resistance by eliminating bond wires using clip leads or flip-chip assembly methods
• Reducing thermal resistance by die thinning and conductive epoxy die attach Discrete power devices require the same low thermal and electrical resistance as power ICs and employ the same techniques as described above, except the power discrete devices generally conduct higher currents and lower electrical resistances than their power IC counterparts, achieved using clip leads, larger diameter bond wires, or a greater number of bond wires. Discrete transistor and power packages generally require 2 to 7 electrical connections, with three connections being the most broadly applicable, i.e. with
a low current gate or input signal, 'a high current source or cathode connection connected through bond wires or clip leads, and a drain or anode connection made through the electrically conductive die pad that also serves as a heat sink.
In addition to manufacturing footed and leadless packages, the USMP process and technology disclosed herein is also capable of fabricating leaded packages either for thru- hole or surface mount assembly. The major difference between a footed package and a leaded package fabricated with the USMP process is best illustrated through cross sectional views of various types of USMP packages. The cross sections shown i« Figure ISA through Figure 15F represent a cutHne from any package edge having leads, feet or connections, through the package to the opposing edge.
Figure ISA contrasts a footed and leadless USMP fabricated package, each having a lateral length on a PCB extending from Y0 to Y10. Footed package 220 A and leadless package 220B include conductive feet 1S3G and 183H comprising segments B, vertical columns 182B and 182C comprising segments A, cantilevers 181 B and 1.81 C comprising segments C, exposed die pad 180B comprising segment A, and an intervening gap AG between segment A and segments C, Semiconductor die 19GB sits atop exposed die pad I SOB, attached by intervening die attach 191 B. Bond wire J.95B electrically attaches to an electrode on a portion of the surface of semiconductor die 190B and connects through cantilever 181 B to foot 183G. Bond wire 195C electrically attaches to another electrode on a portion of the surface of semiconductor die 19GB and connects through cantilever 18 Ϊ C to foot 183E.
The bottoms of segments A and B are intrinsically coplanar being constructed from a common piece of copper. The tops of segments A and C are intrinsically coplanar being constructed from a common piece of copper. Outside of the die in the street., i.e. laterally at locations below Y0 or beyond Y10, segment D is clear of all plastic and metal. In leadless package 220B, laser-defined plastic 196E extends laterally from street to street, i.e. from Y0 to Y10, In the case of footed package 220A, plastic 196D does not coyer the package from street-to-street, but instead extends laterally from Y2 to Y8 atop vertical columns 182B and I 82C, with only a portion of the vertical columns being visible beyond the edges of plastic 1.96D. Plastic 196D and 196E both extend vertically from the bottom edge of the plastic to an upper surface covering bond wires 195B and
.195C, hi manufacturing, both footed package 220A and leadless package 220B are fabricated identically except the laser used to remove the plastic defines the lateral extent of plastic 196Ό in footed package 220A between. Y 2 and Y8 while the lateral extent of plastic 196E in leadless package 220B remains undisturbed between Y0 and Y10.
Figure Ί5Β illustrates two variants of leadless and footed US MP packages made in accordance with this invention. In footed package 220C, plastic 196F extends from Yl to Y9 extending atop feet 183G and Ί83Η and completely encapsulating vertical columns 182B and 182C. in leadless package 22013, the foot previously comprising segments B is replaced by vertical columns 182D and 182E comprising segments A.
Figure 15C illustrates a footed USMP package 220E and a leadless package 220F comprising isolated die pads made in accordance with this invention, specifically where die pad 1 S I D comprises segment C encapsulated on all sides by plastic I96D or 196E.
Figure 15D illustrates two variants of power USMP packages made in
accordance with this invention. In footed power package 220G, a semiconductor die 190 A comprises a power device mounted atop an exposed die pad 180A encapsulated by plastic I 96C, with a conductive die attach 191 A. Bond wire 195 A electrically connects surface metallization of semiconductor die 190A to cantilever 181 A and through vertical column 182A to foot Ί 83Η. Exposed die pad 180A and heat, tab JSOC, along with foot 183.1, provide both electrical and thermal conduction. Plastic 196C extends laterally from Y3 to Y9, with plastic between Y0 and Y3 removed from heat tab 18.0C to improve convectt ve cooling .
Also shown in Figure 15D, power package 220H includes semiconductor die 190A. 'mounted atop an isolated die pad 181 E in segment C and encapsulated by plastic 196C. Thermal energy flows laterally through isolated die pad 18 IE to exposed die pad 18 IF and through vertical column 182F into foot 1S3H. In this manner heat is removed by convection from the surface of heat tab 181 F and by thermal conduction into the PCB through foot IS3K,
Although the USMP process disclosed herein is capable of fabricating surface mount packages with intrinsically coplanar die pad and feet, the process is also capable of producing leaded packages for either thru-hole or surface mount PCB assembly. In such packages the cantilever segment C facilitates a lead protruding from the center of the
plastic and not eoplanar with the backside of an exposed die pad. Figure I 5E illustrates one implementation of a leaded package where cantilever 18 I H . protrudes from plastic 196C for an extended length from Y9 to Y20. In the process of fabricating package 220 J, the backside mask layer has an opening that extends throughout section C whereas the topside mask layer extends throughout section€, the result being that the metal sheet is etched only from the backside in section C. As a result, the bottom of cantilever 181H is not copianar with the bottom of die pad 180 A, heat tab 180C, or heat tab foot .183 j. In this way the USMP process can be employed to produce leaded packages such as the TO- 220, but without requiring mechanical punching, eliminating all mechanical stress.
The USMP process can also be used to replace gull wing packages while completely eliminating the need for imprecise mechanical lead bending. An example of a USM P replacement of a gull wing power package 220K. is shown in. Figure 1SF, where cantilever 181 L extends beyond plastic 196C from Y9 to Yl T Beyond YI 1 , vertical column 1 SOL comprising segment A connects to a foot 183L extending to ΥΊ2. Unlike conventional gull wing packages, the length of cantilever from Y9 to Y l 1 is not constrained by the need to secure a clamp for mechanical lead bending. Moreover, the bottom surface of foot 183L is intrinsically copianar with the bottom of die pad 108A and foot 183 J because they are constructed from the same piece of copper without any mechanical bending or punching. No conventional lead bending process can guarantee coplaaarit)'. While in the embodiment shown a heat tab- 180C is located on one edge of the package and lead 1.81L on the other side, leads may be present on two, three, or 'four sides of the package, with our without the heat tab as desired.
The cross sections shown in the prior illustrations represent cross-sectional views taken at cutSines through and in parallel to conductive leads. Figure 16 illustrates cross- section views taken at several outlines parallel, to the package sides and perpendicular to the conductive leads. The perspective drawing illustrates the locations of the various cross sections shown, where die pad. 209 is spaced apart from cantilevers 205 A and 205B by a space 208 comprising gaps A£. Cantilevers 205 A. and 205B comprising segments C connect to vertical columns 203A and 203B comprising segments A which in turn connect to feet 20.1 A. and 201 B, which are spaced apart laterally by air gap 202. Vertical
surface 210 defines the lateral extent of the package's plastic, where everything ro front of vertical surface 210 is exposed and everything behind it is encapsulated.
Cross section Yl-Y f illustrates the cistline through feet 201 A and 20.1 B separated by air gap 202. In the plane of vertical surface 210, cross section Y2-Y2' illustrates the outline through vertical columns 203A and 203 B separated by plastic 204 202, Behind the plane of vertical surface 210, cross section Y3-Y3' illustrates the outline through cantilevers 205 A and 205B separated by plastic 204, In gap 208 between the end of cantilever 205A or 205B and die pad 209, cross section Y4-Y4' illustrates only plastic 204 is present.
US MP Package Features Using the USMP fabrication sequence disclosed herein a wide variety of packages types and diverse package features can be fabricated. While the internal construction of USMP packages may vary, the external package features relevant to PC'S assembly fabricated by the 'USMP process can be identified and grouped into several, large taxonomies, namely
• Footed 'surface mount packages with exposed side-walls
• Footed surface mount packages with non-exposed side-walls
• Leadless surface mount packages
• Leaded through hole packages with straight leads
• Leaded surface mount (i.e. gull wing) packages (without lead bending)
» Heat tab power surface mountabie packages
• Combinations of the above
While the above leaded packages may also utilize lead bending and forming steps to fabricate conventional gull, wing shaped leads there is no benefit to do so, as the various USM P options described above are superior to niechanieally bent leads both in performance and in manufacturabiliry.
Figure 17 A illustrates perspective, lengthwise, side, and bottom views of a footed surface mount package with exposed sidewalls. In perspective drawing 250, plastic package 251 includes at least one conductive foot 252 protruding from the package body coplanar with the bottom of the package. This foot, comprising copper plated with a
soklerable metal such as tin, silver, palladium, nickel, etc. is used for soldering the package to a PCB and is compatible with both wave-soldering and solder reflow assembly.
In wave-solder assembly of a footed package, solder is applied from above after die package is affixed or glued to the PCB. The solder, in molten form coats the package and PCB but adheres only to the metal surfaces, i.e. to the exposed foot 252 and possibly also to the exposed sidewall 253. In wave-solder assembly, no solder is applied beneath foot 252 prior to the component's placement. The resulting solder is easily verifiable using automatic optical inspection methods to confirm a proper solder attachment has been achieved.
The footed package shown in Figure 17A is also compatible with solder reflow assembly processes. In solder reflow assembly, solder is coated onto the PCB prior to component placement and melted into place. The package is then placed atop the hardened solder and held in place on the PCB using glue or mechanical support while the PCB is fed through a furnace or oven, typically on a slow moving conveyor belt The oven's temperature is chosen to be sufficiently high to re-melt the solder on the PCB as the PCB passes through it. The melted solder then flows in liquid form adhering to the package's conductive 252 foot and possibly wetting onto the sides of the foot by the action of surface tension. Because the solder, melted onto the PCB before component placement, melts a second time, the process is referred to as a solder "retlow" assembly process. Reflow PCB assembly is slower and involves more expensive production equipment than wave-solder assembly. Generally wave-solder assembly requires x-ray inspection to confirm soldering quality.
The footed IJSMP package is unique in that it is both wave-solder and solder reflow compatible. Specifically the package is wave-solder compatible because the solder easily flows onto foot 253 and partially onto vertical sidewall 253. As shown in the bottom view however, it is evident that feet 252 comprise a conductor larger than that protruding beyond plastic 251. This large metal, pad exposed on the package's underside, having a. total metal area equal to or greater than today's leadless packages such as the QFN or DFN , provides sufficient area for reliable solder reflow attachment. With proper PCB design, solder during reflow can also redistribute itself via surface tension up onto
the top and sides of foot 252, facilitating optical, inspection even in solder-reflow assembly lines.
Figure 17B illustrates perspective, length wi se, side, and bottom views of a footed surface mount package with non-exposed vertical sidewalls. In perspective drawing 260, plastic package 26.1 includes at least one conducti ve foot 262 protruding from the package body coplanar with the bottom of the package but does not include a metallic vertical sidewail for solder to wet onto. Like the previously described package, this v ariant of the footed package may be assembled onto a PCB using either wave-soldering or solder reflow.
Whether the vertical conductive sidewail is beneficial or not is a matter of preference for the particular PCB assembly house. Eliminating the vertical conductive sidewail may reduce the risk of unintended shorts between the package's feet and any exposed tie bars but with proper design rules, the risk can completely mitigated. The advantage of an exposed vertical sidewail is that it provides additional area for soldering and is easily confirmed by optical inspection, but proper processing of the foot-only package can reliably produce tire same performance. So in essence, there is no difference between the two versions of the footed package. Throughout the remainder of the application the footed package illustrations will depict packages with exposed vertical sidewalls, but it should be understood that non-exposed sidewail version may be substituted as desired.
Figure 17C illustrates -perspective, lengthwise, side, and bottom views of a leadless surface mount package. In perspective drawing 270, plastic package 271 has no conductive foot or lead protruding from the package body and no metal for solder to reliably attach onto. The vertical conductive sidewail 273, while solderab!e is not adequate to insure solderability using wave-solder assembly. So iralike the previously described footed packages, this variant of the US MP package can only be assembled onto a PCB using solder reflow. The key point of this graphic is the USMP process is capabl e of making exact duplicates of existing leadless packages such as - the QFN and DFN using the same USMP fabrication sequence capable of making wave-sol derabie footed packages and even capable of fabricating through-hole leaded packages, hence die package's moniker "universal".
A -Variation of the IJSMP fabricated leadless package is shown in perspective, lengthwise, side, and bottom views in Figure 17B. In this version, shown in perspective drawing 276, the leadless landing pad comprises only a foot 277 rather than an entire conductive column so that the exposed vertical sidewail is replaced by the vertical sidewali. of foot 277 contained entirely within the plastic 27.1 except for its sidewail and underside edges. The underside view of this variant is identical to that of feet 275 in the previous illustration, in another alternative embodiment shown m Figure 17E, foot 279 is inset from plastic body 271 edge, and no metal appears on the package sidewali as depicted in perspective drawing 278.
An example of a leaded package manufactured using the USMP process is illustrated in Figure 18A including perspectives lengthwise, side, and bottom views. While the package is fabricated using the USMP process designed for making surface mount packages, the package shown in perspective view 280 is a leaded package designed for through-hole PCB assembly, not for surface mounting. As such lead 286 protrudes from package body 281 , near the center of the plastic package's body and not coplanar with the bottom of the package. The shadow or optica! "projection" 287 of lead 286 onto the plane defined by the bottom of plastic 281 is sho wn to clari fy the three dimensional location of the lead.
For completeness, the USMP process can be used to fabricate "leaded surface mount packages" similar in shape to gull wing packages but without any need for lead bending.. This type of package is illustrated in the perspective drawing 290 of Figure I8B comprising metal lead 296 protruding from plastic body 291 and intersecting with vertical column 293 connected to foot 292. Foot 292 is precisely coplanar with the bottom of the package and plastic 291 because no bending is involved in fabrieatmg the lead. The shadow or optical "projection" 297 of lead. 296 onto the same plane as the bottom of plastic 291 and foot 292 is shown to clarify the three dimensional location of the lead elements.
The USMP process is also capable of fabricating heat tabs used in power packaging. In perspective 300 of Figure WC thick metal heat tab 303 protrudes from plastic 301 to facilitate enhanced thermal conduction into the PCB and enhanced convection into the air. As shown, thick metal heat tab 303 is attached to foot 302 to
provide wave-solder compatibility, a feature conventionally fabricated heat tabs do not offer. Foot. 302 may be located along one edge of heat tab 303 as shown, or may circumscribe the beat tab 303 along its periphery in. its entirety or in a portion thereof.
In summary, the visible elements of the various packages that may be fabricated using the USMP process comprise the geometric elements described previously in Figure 9A through Figure 90. Specifically, in footed packages only the foot protrudes beyond the package plastic, in leaded packages the cantilever protrudes from the plastic, in power packages the entire vertical column protrudes beyond the package body, while in leadiess packages no metal substantially extends beyond the plastic 's exterior edge.
Interna! Construction of USMP Fabricated Footed Packages To demonstrate the versatility of the USMP process in fabricating a 'wide range of packages, it is beneficial to illustrate the internal construction of exemplary packages by the cross section. In asymmetric packages such as footed DPAK or a footed DFN. the cross sections in the lengthwise direction, i.e. transecting the leads, will be different than the transverse cross sections, in a. quad package, the cross sections are typically symmetric with no differentiation between lengthwise and widthwise orientation, except possibly for the package's length in that direction.
Figure 19A comprises cross-sectional views of exposed and isolated die pad USMP leadframes m .the lengthwise package direction, specifically along a cntiine through a die-pad-eomiecied foot and an isolated foot. The leadframe cross-sectional views are "asymmetric" with respect to an imaginary center line because the leadframe features are not mirror images on opposite sides of the package's center, i.e. the left side and right sides are different.. Cross-sectional view 340A representing outline A-A' illustrates an exposed die pad package where die pad 351 A connects to foot 352 A on one side while cantilever 353A, vertical column 354A and foot 352B form a Z~shaped conductor and foot not connected electrically to die pad 35 Ϊ A. Plastic envelopes the -leadframe and semiconductor die (not: shown) including a. top portion- 350A and a. lower portion 3 SOB to realize a void-free homogeneous eneapsuiant The lower edge of plastic 3 SOB is coplanar with die bottom of feet 352A and 352B, vertical column 354 A, and exposed die pad 351 A. In cross section 340C- representing outline C-C exposed die pad
351 A is replaced by isolated die pad 353A comprising a cantilever portion of the leadframe.
Figure 19B comprises cross-sectional views of exposed and isolated die pad USMP leadframes, specifically along a symmetric cutiine through die pads and tie bars. In cross section 340B representing outline B-B' exposed die pad 351 A includes tie bars 353C and 353D comprising cantilever portions of the leadframe, surrounding by plastic 350A and 3506. The lateral edges of tie fears 353C and 353D do not protrude beyond the edge of the plastic package body. The lower edge of plastic 350B is copianar with the bottom exposed die pad 351 A. in cross section 340D representing outline D-D', isolated die pad 353E comprises a cantilever portion of the leadframe throughout the plastic body. Because the isolated die pad merges with the tie bars, they are indistinguishable in this cross section.
Figure 19C comprises cross-sectional views of exposed and isolated die pad USMP leadframes, specifically along a symmetric cutiine through die-pad-eonneeied feet. In cross section 34ΘΒ representing cutiine E-E! exposed die pad 351 A connects to feet '352 A and 352B on opposing sides of the package and is encapsulated on i ts top surface by plastic 350A. In cross section 340F representing cutiine F-F' isolated die pad 353F connects to feet 352A and 352B on opposing sides of the package and is
encapsulated by plastic 350 A above and 350B below.
Figure 19D comprises cross-sectional views of exposed die pad USMP leadframes for power packaging, specifically representing a cutiine through a heat tab and feet. In cross section 3406 representing cutiine G~Q' exposed die pad 351 A extends beyond encapsulating plastic 350A to form heat tab 355. Foot 352A is connected to heat tab 355 to facilitate wave-solder 'capability . On the other edge, cantilever 353 A, vertical column 354A and foot 352B form a Z-shaped conductor and foot not connected electrically to die pad 351 A. Plastic envelopes the leadframe and semiconductor die (not shown) including a top portion 350A and a lower portion 3 SOB to realize & void-free homogeneous encapsulant. In cross section 34011 representing cutiine H-Pf exposed die pad 351 A connects to cantilever 353G, vertical column 354B and foot 352B. Cantilever 353G sits atop plastic 350B. The bottom edge of plastic 350B is copianar with the bottom edge of feet 352 A and 352B, exposed die pad 351 A, and heat tab 355.
Figure J 9E comprises a cross-sectional view -of an exposed die pad USMP leadframes along a cuttme through a heat tab and tie bar. In cross section 3401 representing cutiine J -J' exposed die pad 351 A connects to heat tab 355 and foot 352 A while on the opposing edge cantilever 353 D sitting atop plastic 3 SOB extends laterally to the edge of plastic 350A and 350B.
Figure 19F comprises cross-sectional v iews of exposed and isolated die pad USMP leadframes along a symmetric eiitline through feet not connected to the die pad. Specifically; in cross section 340K representing outline K~K', a Z-shaped conductor and foot comprising cantilever 353A, vertical column 3S4A, and foot 352A is located adjacent to, but electrically isolated from, exposed die pad 351 A. Symmetrically, the package's opposing edge includes another electrically isolated Z-shaped conductor and foot comprising cantilever 353B, vertical column 354B and foot 352B. Plastic envelopes the leadframe and semiconductor die (not shown) including a top portion 350A and a lower portion 350B to realize a void free homogeneous encapsulant. The bottom edge of plastic 350B is coplanar with the bottom edge of feet 352 A and 3528* and with isolated die pad 353 H comprises a cantilever surrounded on all sides by plastic 350A and 350B. As such die pad 353H is electrically isolated from the package's' backside and from any adjacent feet.
Figure 19G comprises cross-sectional vie ws of exposed and isolated die pad USMP leadframes, specifically made along a symmetric outline through die pads not transecting feet or tie bars. For example, cross section 340M representing cutiine M-M' illustrates exposed die pad 351 A surrounded by plastic 350A and 350B while cross section 340M representing cutiine N-N' illustrates isolated die pad 3531-1 surrounded by plastic 350A and 350B.
Figure 19H comprises cross-sectional views of exposed die pad USMP leadframes along a symmetric cutiine through dual die pads with and without tie bars. Cross section 340Q representing cutiine Q-Q' illustrates two die pads, specifically exposed die pads 351 A and 35.1 B surrounded by plastic 350A and 35GB. In cross section 340P representing cutiine P-P' the two die pads connect to cantilever tie bars extending to the edge of the plastic body, specifically w here exposed die pad 351 A connects to tie bar 353C and where die pad 135.1 B connects to tie bar 353D.
Figure 191 comprises cross sectional, views of isolated die pad US MP leadframes along a symmetric cutline through dual die pads with and without tie bars. Cross section 340S representing cutline S-S' illustrates two die pads, specifically isolated die pads 353J and 353 K surrounded by plastic 3S0A and 3 SOB. In cross section 340R representing outline R-R' the two die pads connect to cantilever tie bars extending to the edge of the plastic body, but because the cantilever tie and isolated die pad are formed from the same .cantilever, they are indistinguishable .in the drawing..
Fig, 193 comprises cross sectional vi ews of mixed, isolated and expos ed die pad USMP leadframes along a symmetric cutline through dual die pads with and without tie bars. Cross section 340U representing cutline U-U' illustrates two die pads, specifically exposed die pad 351 A and isolated die pad 353K surrounded by plastic 350A and 3 SOB. In cross section. 340T representing cutline T-T' the two die pads connect to tie bars extending the edge of the plastic body. As shown, exposed die pad 35.1 A connects to tie bar 353C comprising a cantilever, isolated die pad 353K similarly connects to a cantilever tie bar bin since the die pad is formed from the same cantilever, the isolated die pad and tie bar are indistinguishable in the drawing.
Figure Ϊ 9Κ comprises cross sectional view 340V of a dual isolated die pad USMP leadframe, specifically depicting symmetric cutline V-V through isolated dual die pads 353L and 353M, corresponding vertical columns 354A and 354B, and
corresponding die-pad connected feet 352 A and 352B.
Lastly Figure 19L illustrates a cross sectional and bottom view a Z-shaped conductor and foot not connected to a die pad composing a cantilever portion 353A used for wire bonding, a vertical column 354.4, and a foot 352B. From both bottom and cross sectional views the exposed metal on the backside of the pac kage inc ludes a portion overlapping plastic 350A and another portion protruding beyond the plastic's edge. Throughout subsequent drawings in this disclosure, the Z-shaped conductor and foot will be represented as a shaded foot depicting that portion of the connection, viewable from the package's underside and a thin line extension representing the cantilever portion located inside plastic 350A and not disceraable from the package's exterior, not visible from the package's- underside, except through the use of X-ray inspection. The length of
the dotted portion is subsequent illustrations may not be to scale but is included simply to remind the reader that the foot is part of a square Z-shaped conductor.
Examples of Dual USMP Footed Packages The following illustrations depict a variety of dual-sided package constructions that can be .fabricated with the USMP process and methods disclosed herein. A dual package is a package where leads or feet are present on opposing sides of the package. Dual packages may be square or rectangular. In a rectangular pac kage, the longer di mension is referred to as the length wi se direction of the package whether it has connections, i.e. leads or feet, on those edges or orthogonal to those edges. The drawings generally include a perspective illustration of the package and two underside illustrations - one using an exposed die pad, the other comprising an isolated version of the same package. In most cases the perspective view is identical for both the exposed die pad and isolated versions.
The relevant cross sectional cutlines from the previous section are identified on the underside views to unambiguously identify each package's construction. Moreover, using the USMP process any footed dual-sided package can be converted into a dual leadless package, i.e. a DFN equivalent footprint having no feet extending beyond the plastic body's edges, simply by aligning the laser cuts for the metal removal to the same regions and edges used to define plastic removal. For the sake of brevity, the USM P leadless versions of the fol lowing dual packages will be excluded from 'the drawings .
Figure 20A through Figure 31. illustrate the extremely diverse range of single-die and multi-die packages that can be fabricated using USMP methods and apparatus disclosed herein as depicted by topside, underside, and in some cases by perspecti ve views. For the singie-die-pad packages the labeled cross-sectional views correspond to the similarly labeled detailed cross-sectional constructions shown in Figure 19A through Figure I9G (i.e., cutlines A- A'. B-Β'...Ν-Ν'), and tor the multi-die-pad. packages the labeled cross-sectional views correspond to the similarly labeled detailed cross-sectional constructions in the detailed cress sectional constructions shown m Figure Ϊ9Β through Figure 19K (i.e., cutlines P-P', Q-Qf... V- V) and in Figure 24C through. Figure 244 (i.e., cutlines Wl -WT, W2-W2'...Z4-Z4'). A detailed comparison of the topside and cross sectional view of a Z-shaped conductor and foot is also included in Figure 1.9L.
The drawings included are schematic representations of the various USMP fabricated packages and their elements, not diraensionally precise CAD drawings. While the general dimensions of the drawings are intended to be accurate, in many cases the exact dimensions are not precisely consistent, e.g. the length of the cantilever section of the Z shaped conductor and foot may be longer than depicted by underside view drawings. As such these drawings are intended to illustrate USMP elemental components, e.g. a package's die pad, foot or feet, Z shaped conductors, cantilever extensions, and. tie bars without limitation, it will be well known to those skilled in. the art thai dimensions may be increased or reduced without affecting the general, features made possible by the USMP fabrication process.
As shown, Figure 20A comprises various views of smgle-die-pad 2-footed USMP 370 compatible shown with either isolated or exposed die pads. Such, packages are useful for packaging devices with two electrical connections such as semiconductor diodes including PN, zener, and Schottky diodes, transient voltage suppressors, voltage clamps, cm-rent limiters, and other two-terminal devices. The footed package as shown comprises plastic 371, foot 372, and wide foot 373. Tie bars 374 and the package feet connect to the leadframe matrix, holding the package securely in place during
manufacturing.
In the illustration in the iower left, in order to maximize the available die size and to Iower the package's thermal resistance, exposed die pad 376 is connected to wide foot 373 as depicted along cutfine A-Af and illustrated previously in Figure 19 A. A cross section of the tie bar connection perpendicular to outline A~A' is depicted along cutlme B-Bf corresponding to the cross-sectional view shown previously in Figure 19B, •Similarly, in the illustration in the lower right, to maximize the die size, wide foot 373 is connected to isolated die pad 377 as depicted along ciiilme C-C and along tie bar cutline D-D' corresponding to the cross-sectional views shown previously in Figure 19A and in Figure 19B respectively. While the thermal resistance of the isolated package of the isolated die pad package is not as low as die exposed die pad version, substantial heat: conduction flows through the cantilever die pad, down to die-pad connected foot, and into the PCB.
A -Variant of the previous single-die-pad 2-footed USMP 380 is illustrated in Figure 2ΌΒ where the second isolated foot 382 is made as wide as the die pad connected foot 383. The cross sections are identical, to the previous illustration. Figure 20C further expands the maximum die size of the package by extending the die pad connected foot onto three sides of the package, eliminating the tie bar by the three-side foot design. For example, in the exposed die-pad version shown in the lower left illustration, exposed die pad 396 connects to foot 393 on three sides.
Although the lengthwise cross section depicted by cufSine A-A' remains unchanged from the prior versions, the widthwise cross section is different, as
represented along cudine E-E' as depicted by the corresponding cross section shown previously in Figure 19C. Similarly, the isolated die pad version of the same package is illustrated in the lower right drawing where three-sided foot 393 connects to isolated die pad 397. Although the lengthwise cross section depicted along outline C~C shown previously in the cross section of Figure 19 A remains unchanged from the prior versions, the widthwise cross section is different, as represented along outline f~F as depicted by the corresponding cross section shown previously in Figure 19C. In another embodiment of the same 2-fboted package the three-sided foot is combined with a wide foot 402 as shown in drawings of Figure 20D.
The size of the aforementioned USMP footed pac kages with two electrical connections can he adj usted based on the current rating and die size of the product being packaged. For large area die conducting higher currents, multiple bond wires, flip chip assembly, or copper clip leads may be used to connect the die's topside to the other connection. For devices expected to dissipate substantial heat, the exposed die pad version -is preferred because of its lower thermal resistance and better heat spreading capability.
Figure 21 A comprises various views of single die pad 3-fboted USMP 410 compatible with either isolated or exposed die pads. Such packages are useful for packaging devices with three electrical connections such as bipolar transistors, small signal MOSFETs, JFETs, power MOSFETs, high-voltage MOSFETs, three-terminal voltage regulator 3 Cs5 low-dropout linear voltage regulators or LDOs, and shunt regulators, or any three terminal device 'provided it does not exhibit excessive heat
generation. High power devices such as thyristors and IGBTs generally require a power package with a heat tab and are therefore not candidates for using this particular class of footed USMPs.
The footed package as shown comprises plastic 41 1, feet 412A and 412B, and wide foot 413, Tie bars 414 and the package feet connect to the ieadframe matrix, holding the package securely in place during manufacturing. In the illustration in the lower left, in order to maximize the available die size and to lower the package's thermal resistance, exposed die pad 416 is connected to wide foot 413 as depicted along outline A-A' and shown previously in Figure 19A. A cross section of the tie bar connection perpendicular to outline A~Af is depicted along outline B~B' as shown previously in Figure 19B, Similarly, in the illustration in the lower right, to maximize the die size, wide foot 413 is connected to isolated die pad 417 as depicted along outline C-C and shown previously in Figure 19A and along tie bar outline D-D' as shown previously in Figure 19B. While the thermal resistance of the isolated die pad package is not as low as the exposed die pad version, substantial heat conduction flows through the cantilever die pad. down to the die-pad connected foot, and into the PCB.
An improved thermal performance can be achieved using a three-sided foot shown for USMP 420 in Figure 21 B, As shown, the maximum die size of the package is enlarged by extending the die pad to the package edge, eliminating the tie bar, and connecting the die pad to a foot on three sides of the package. For exampl e in the exposed die-pad version shown in the lower left illustration, exposed die pad 426 connects to foot 423 on three sides.
Although the length of the die pad 426 along outline A- A* shown previously in Figure 19A remains unchanged from the prior versions, the width of the die pad 426 along cutline E~E' depicted in Figure 19C is greater, i.e. wider. Similarly, the isolated die pad version of the same package is illustrated in the lower right drawing where three- sided foot 423 connects to isolated die pad 427. Although the length of the die pad 427 along cutline C-C with a corresponding cross section shown in Figure 19A remains unchanged from the prior versions, the width of the die pad 427 along cutline F-F' depicted in Figure 19C is greater, i.e. wider.
At higher power levels, a heat tab is required to further improve thermal conduction and cotr.vecti.ve cooling. For example, Figure 21C illustrates 3-footed single die pad power USMP 430 with heat tab 438. The package includes tour feet, namely 432A. 432B, 432C and 433: exposed die pad 436 with heat tab 438 and tie bar 434. To be consistent with conventional DPAK and D2PAK designs, center foot 432B is electrically shorted to exposed die pad as illustrated along outline H-Hf as depicted by the
corresponding cross-sectional view shown previously in Figure Ϊ9Β. Feet 432 A and 432C are electrically isolated from exposed die pad 436 as depicted along cutiine. G~G* as depicted by the corresponding cross section shown previously in Figure 19©, with one terminal commonly employed as a gate signal and the other for a high current connection, e.g. the source connection of a power MOSFET, To accommodate additional bond wires for high current conduction, cantilever 439C connected to foot 442C is wider than its corresponding foot. Similarly, cantilever 439A is wider than its corresponding foot 432A. One unique feature of footed USMP power packages as disclosed is the addition of heat tab connected loot 433, enabling wave-solder assembly of a DPAK. In a power package variant 440 shown in Figure 21D, the center foot may be replaced by tie bar 444B along cutiine J -J' as depicted by the corresponding cross section shown previously in Figure 19E.
For higher pin count dual sided packages applications vary. Packages with 4 to 8 electrical connections often contain linear ICs, power ICs, interface ICs, and even dual MOSFETs, e.g. one N-channel and one P-channel power MOSFET. For example. Figure
22A illustrates a single die pad 4-footed USMP 500 comprising plastic body 501, feet 502A through 502D, and tie bar 504, The Footed package may be realized using an exposed die pad 506 as depicted along widthwise cutiine K-K' and lengthwise outlines B- B' and M-M' as depicted by the corresponding cross-sectional views shown previously in Figure 19F, Figure I9B, and Figure 19G respectively. The footed package may also be realized using a single isolated die pad 507 as depicted along widthwise cutiine L~L' and lengthwise eut!ines D~D' and N~N' as depicted by the corresponding cross-sectional views shown previously in Figure 19F, Figure 19B, and Figure 19G respectively.
The -terms "widthwise" and "lengthwise''' are arbitrary descriptions of
perpendicular directions and are not intended to restrict or limit the meaning of the
invention. In general, the term 'length" refers to whichever direction is longer but should not be construed to limit the package's construction flexibility on the orientation of the leadframe relative to the plastic's shape, or the number of feet on the package 's longer or shorter edges so long that the design rales of the minimum foot-to-foot spac ing and foot to corner spacing are maintained. The allowed foot-to-foot spacing, i.e. the pitch from the center of one foot to its neighbor, varies depending on the capabilities of the PCB factory mounting the USMP rather than on its fabrication.
Inter-feet pitches may vary as required, generally adopting industry standard lead pitch values used in today's gull wing leaded packages. Common center-to-center pitch dimensions may include 0,2mm, 0.35mni} 0.4mm, 0.45mm, 0.5mm, 0.8mm, LOrnni, 1 ,27mm, and 1.5mm. In some instances, e.g. in high voltage applications, a larger dimension may be achieved, not by introducing a new pitch, but by omitting one foot from the package while maintaining a standard pitch dimension for the remainder of the package's feet. For example, a USMP fabricated footed package with a standard foot pitch of 0.45mm can be achieve a 0.9mm pitch by omitting one foot from the package.
Figure 22B illustrates a single die pad 6-footed USMP 510 comprising plastic body 51 1 , feet 512 A through 512F, and tie bar 514. The footed package may be realized using an exposed die pad 516 as depicted along widthwise outline K-K' and lengthwise outlines B-B' and M-M' as depicted by the corresponding cross-sectional views shown previously in Figure I9F. Figure 19B, and Figure 19G respectively or with an isolated die pad 517 as depicted along widthwise outline L-L' and lengthwise cutiines D-D' and N~N' also shown in the same referenced figures.
Fig. 22C illustrates underside views of various single die pad USMPs with exposed die pads. An 8-footed package may be realized as shown comprising exposed die pad 526 as depicted along widthwise outline K-K' and lengthwise cutiines B-B' and M- Mf as depicted by the corresponding cross sections shown previously in Figure 19F, Figure 19B, and Figure 19G respectively, with feet 522 A through 522H, or similarly in a 1.2-footed package comprising exposed die pad 536 with, feet 532A through 532H, or a 18-footed package comprising exposed die pad 546 with feet 542 A through 542R. In the latter case where die pad widens in proportion to the package's length, more than one tie bar may be employed, e.g. tie bars 544 A. and 544B.
Fig, 220 illustrates underside views of various USMPs with isolated die pads. An 8-footed package may be realized as shown comprising isolated die pad 557 as depicted widthwise along cutline L-L' and lengthwise along outlines D-D' and N-N" as depicted by the corresponding cross sections shown previously in Figure J9F, Figure 19B, and Figure 19G respectively, with feet 552A through 552H, or similarly in a 12-footed package comprising isolated die pad 567 with feet 562 A through 562 H, or a 18~footed package comprising isolated die pad 577 with feet 572 A through 572SL As described previously, more than one tie bar may be employed to stabilize wide die pads, e.g. tie bars 574A and 574B.
in USMP based technology as disclosed, a wide range of packages can be fabricated using a common fabrication sequence simply by changing the leadframe design. For example a 16-fooied dual sided USMP can be used to realize numerous permutations of single or dual exposed, isolated, or mixed die pads of varying sizes and pin outs. Figure 23A illustrates underside views of 16-footed USMPs with single and dual exposed die pads. The single die pad drawing shown on the left comprises an exposed die pad 606 with feet 602A through 602P. As depicted along widthwise cutline K-K' as depicted by the corresponding cross section shown previously in Figure 19F, the feet are not connected to the die pad. Lengthwise construction is shown along outline B- B' through tie bars 604A and 604B and along outline M~M? transecting only exposed die pad 606 and plastic 601 consistent with the corresponding cross sections shown previously in Figure 19B and Figure 19G respectively.
The dual die pad version shown on the right side of Figure 23A comprises 'two die pads, namely exposed die pad 616 A held in place by tie bar 614A and exposed die pad 616B held in place by tie bar 614B. Lengthwise construction is shown along outline P-P' through tie bars 614 A and 614B and along cutline Q-Qf transecting only exposed die pad 606 and plastic 601 consistent with the corresponding cross sections both shown previously in Figure 19H. While exposed die pads can be mechanically supported from underneath during wire bonding, the center most ends of die pads 616A and 616B have no tie bar connections and are prone to move during manufacturing, especially during molding. To prevent this problem, the die pads can be connected to any one of the feet, either by a vertical column or by a cantilever. Various combinations of die pad connected
feet are sho wn in subsequen t drawings. For example, in the left slide illustration of dual die pad package shown in Figure 23B, exposed die pad 626A is held in place by tie bar 624 and die pad connected lead 622F. Exposed die pad 626B is held in place by tie bar 624B and die pad connected feet 622B> 622C and 622Ό, also serving as an electrical connection and a thermal path.
When leads are connected to a die pad, the maxi mum number of electrical connections of a package is reduced. For example, while the dual pad design of Figure 23A has 16 distinct feet, it offers 18 electrical connections because die pads 61.6A and 616B can be electrically connected underneath the die pads through the PCB. In contrast, while the left side illustration of Figure 23 B also has 16 distinct feet, it offers only 14 distinct electrical connections because feet 622B, 622Cf 622D and 622F are electrically shorted to the die pads.
in the right side illustration of Figure 23B four feet have merged into one long foot 632Z while die pad connected feet 632 A through 632D remain distinct. The resulting package integrates two low thermal resistance die pads 636A and 636B into 13 distinct feet comprising only 10 separate electrical connections . Because of the extra wide foot 632Z, after wave-soldering exposed die pad 636A is capable of conducting higher current and slightly more heat than exposed die pad 636B.
Die pad connected feet may also be employed for USMP fabricated multi-pin packages with isolated pads, except that extra care must be taken in leadframe design to insure stability during wire bonding and during molding. Examples of .16-footed USMPs with dual isolated die pads are shown in the underside views of Figure 23C, In the left side illustration isolated die pad 647A is stabilized by tie bar 644A and 644B and by die pad connected feet 642E, 642F, and 642G. As depicted along widthwise cutlme C-C or by its cross section in Figure 19A, the feet connect to die pad 647 A with corresponding cantilever sections 642E, 642F, and 642G, Similarly, cantilever section 649M connects foot 642 M to isolated die pad 64 ?B, together with tie bars 644C and 644D stabilizes isolated die pad 647B. The resulting USMP has 16 distinct feet supporting up to 14 unique electrical connections
As shown in the right side illustration of Figure 23C, added stability can be gained by utilizing opposing feet as depicted along widthwise cutline F~Ff and shown by
its corresponding cross section is Figure 19C, where foot 652D and connecting cantilever 659D, foot. 652M and connecting cantilever 659M, and tie bar 654B together form a triangle supporting isolated die pad 657B, The same concept is used for isolated die pad 657A comprising die pad connected wide foot 6522, opposing foot 652L connected to the die pad by cantilever section 659L, which together with tie bar 654 A stabilize isolated die pad 657 A. Wide feet 652Z and 652Ύ are designed to accommodate Integrating a vertical power device such as a power MOSFET where feet 652Z and 652L together conduct the die's backside drain current and heat while foot 652Y supports multiple bonding wires needed for bonding the die's topside high current source connection, ,
The aforementioned concepts for isolated and exposed die pads may be combined in dual die pad packages such as those shown underside views of 16-footed USMPs shown in Figure 23D. In the left side illustration, exposed die pad 666 is connected to foot 662 L with vertical column 669 L and by tie bar 664A. Foot 662D with, connecting cantilever 669D, opposing foot 662M with connecting cantilever 669M, and tie bar 664B together form a triangle supporting isolated die pad 667. The USMP comprises 16 distinct feet supporting 15 unique electrical connections.
In the right side illustration of Figure 231), exposed die pad 676 extends beyond plastic 671 to form wide foot 672Z. By merging wide foot 672Z with die pad 676 and eliminating the required clearance of the die pad within plastic 67 i , the maximum die size can be increased allowing lower resistance devices to be packaged. Wide foot 672 Y is positioned on the opposing side of the package in order to facilitate multiple bond wires for high current connections.
Another consideration is the minimum allowable space between exposed die pads on a PCB. Some printed circuit board manufacturers restrict the minimum allowed space between PCB landing pads especially for die attaching components not suitable for optical inspection. This issue can be especially problematic for dual die pad packages. One sblntio.ii is to locate the die attach locations for dual die pads at a sufficient distance that electrical shorts are highly improbable without restricting the dice's maximum available die sizes. As shown in the left side illustration, of Figure 24A, the space
between exposed die pads 686Ά and 686B cart be enhanced by separating the exposed die pads and replacing the unused space with cantilever extensions 689A and 689B.
As identified alons w len vg.-thwise outlines W 1-YvT and W2-W2' in this manner the distance is increased without sacrificing the maximum die size. The construction of lengthwise outlines Wl-WI' and W2-W2' are shown in cross section in. Figure 24C where exposed die pad 686A is attached to a cantilever extension 689A spanning a portion, of the intervening gap between i t and the other exposed die pad. S imi larly cantilever extension 689B spans a portion of the intervening gap between exposed die pad 686B and the exposed die pad 686A. The result of these changes increases the width of plastic 681 and reduces the risk of PCB shorts.
As shown in the right side illustration of Figure 24A. the space between the feet 692E through 692 P and die pad 696L can also be increased in the same manner by surrounding exposed die pad 696A on three sides by cantilever extension 699 A in the lengthwise direction and by cantilever extensions 699C in the widthwise direction. The space between exposed die pad 699D and its adjacent feet M5- fee* 692A through 6920 and 692 M through 692P, can be increased in the same manner by surrounding exposed die pad 696B by cantilever extension 699B in the lengthwise direction and by cantilever extensions 699D in the widthwise directions as depicted along widthwise outline X 1-ΧΓ. The construction at widthwise outline Xl~X Γ shown in cross section in Figure 24E where cantilever extensions 719C increase the width of plastic 71.1 and reduce the risk of a PCB short.
The left side drawing of Figure 24B illustrates that the. cantilever extensions can be asymmetric, where cantilever extension 709A connected to exposed die pad 706A is has a length shorter than cantilever extension 709B connected to exposed die pad 706B. To support its greater length, cantilever extension 709B connects to foot 702M with cantilever bridge 709C. The construction at outlines Wl-WT and W2-W2' in Figure 24B are depicted in the cross-sectional view's in Figure 24C except that the lengths of cantilever extensions 709A and 709B, referred to by corresponding cantilever extensions 689 A and 689B at cutlke W2-W2' in the cross section of Figure 24C, have not been .adjusted to have dissimilar lengths.,
In an alternati ve embodiment shown the right sMe drawing of Figure 24B enhanced cantilever extensions 719 A and 719C surround three edges of exposed die pad 716A. Exposed die pad 716B is surrounded by cantilever extension 719B as depicted along widthwise cutHne X2-X2' shown in cross section in Figure 24 E and by lengthwise outlines W3-W3' and W4-W4 shown in Figure 240. In both drawings the distance of exposed die pad 7 ί 6B to the nearest conductor, either to feet 7 ί 2 J and 7 ! 2G or to the other exposed die pad 716A, is greatly increased and the width of plastic 71.1 is sign ifkantly widened.
I» an alternate embodiment, only one die pad is reduced in size and the other remains unchanged. Examples of this method are illustrated in Figure 24F where in cross section W2- W2' exposed die pad 686A remains unchanged while exposed die pad 686B is reduced in size and connected on one edge to cantilever extension 698 B increasing the width of plastic 681 , In cross section W4-W4' exposed die pad 7 I6A remains unchanged while exposed die pad 716B is reduced in size and surrounded by cantilever extension 71.9B increasing the width of plastic 71 1.
U SMP fabricated dual packages can also include the use of cantilever extensions also referred to herein as cantilever interconnections, cantilever beams, or cantilever beam interconnections, io improve wire bonding and package to die interconnections. Cantilever beam interconnections facilitate improved access to hard-to-reach portions of an 1C, circumventing bonding angle limitations, minimizing bond wire length, and reducing stray inductance and parasitic resistance. Examples of cantilever beam interconnections are illustrated in Figure 25 A- for 16-footed USMPs integrating various combinations of exposed and isolated die pads with isolated cantilever extensions.
in the left side illustration, cantilever extensions 759 A, 759H, 7591, and 7.59P surround die pad 756, expanding available wire bond locations to facilitate improved bonding angles. I n this manner, wire bonding from ail four sides of a semiconductor die can be achieved in a dual-sided package, facilitating product in a dual-sided package previously possible only in a quad package. To support stable wire bonding and prevent dislocation of an isolated cantilever beam during manufacturing the beams are secured in at least two points in the package. For example, cantilever beam 759A is supported by tie bar 754A on one side and connects to foot 752A on its other end. Wire bonds from
•cantilever beam 754A therefore can reach semiconductor die bonding pads located adjacent to the bottom edge of die pad 756 thai were previously not counectible by a direct bond from foot 752.4.
Similarly, cantilever beam 759H is supported by tie bar 754B on one side and by foot 752 H on its other end, cantilever beam 7591 is suspended between tie bar 754C- and foot 7521, and cantilever beam 759P is suspended between tie bar 754D and foot 752P. Outlines V-V identify the widthwise structure of the package, while cuil.tn.es Ζ1.-ΖΓ and ΥΪ-ΥΓ identify the lengthwise structure transecting and transecting the tie bars, as depicted in Figure 24G including cantilever beam extension 759.H, exposed die pad 756, and cantilever beam extension 759ΑΙ» cut line Ζ1-ΖΓ, cantilever beam extension 7591 is indistinguishable by cross section from tie bar 754C, and similarly cantilever beam extension 759P is indistinguishable by cross section from tie bar 754D. The cross section ofcutline V-V" shown in Figure 19L illustrates the width wise cross section of dual cantilever beam structure, where cantilever extension 353L connects to foot 352A.
through vertical column 3.54A, and where cantilever extension 353M connects to foot 352B through vertical column 354B.
In the right side illustration of Figure 25 A, isolated cantilever beam extension 769B is suspended between feet 762 H and 7621 and further supported by tie bar 764B in order to facilitate easy bonding wire access to any semiconductor die (not shown) mounted on exposed die pad 766. Although the identifying element numbers are different, the cross sectional structure of cutline F-F is depicted in Figure 19C. To facilitate improve thermal conduction and maximize die size die pad 766 is merged with feet. 762 Y and 762Z, Isolated die pad 767 is supported in. two points - by cantilever bridge 769 A connected to foot 762N and by tie bar 764A. The lengthwise cross sections of this package and leadframe identified by outlines Y2-Y2' and Z2-Z2' are depicted in the cross sections of Figure 24H including cantilever beam extension 769B, exposed die pad 766, and isolated die pad 767. In outline Z2-Z2\ cantilever beam extension 769B is indistinguishable by cross section from tie bar 764B.. and isolated die pad 767 is indistinguishable by cross section from tie bar 764A.
A wide range of possible leadframes can be realized using isolated cantilever beam extensions. For example Figure 25B comprises underside views of two alternative
embodiments of Ιδ-footed USMPa integrating dual exposed die pads with isolated interconnections. The illustration on the left comprises two die pads, i.e. exposed die pad 776 and isolated die pad 777, with an intervening isolated cantilever beam 779D suspended between feet 772D and 772M identified along outline F-F as depicted in Figure 19C. The lengthwise cross sections of this package and leadframe identified by outlines Y3-Y3' and Z3-Z3' are depicted in the cross sections of Figure 241.
The illustration on the right side of Figure 25B comprises two die pads, i.e. exposed die pad 7S6 and isolated die pad 787, with an isolated cantilever beam 789H suspended between foot 7S2H and tie bar 784B at the top of the package. A cross- sectional view of isolated cantilever beam 789H is depicted by cutlme C-C shown in Figure 19 A. The lengthwise cross sections of this package and leadframe identified by cutimes Y4-Y4' and Z4-Z4' are depicted in the cross sections of Figure 243.
While the examples and applications of isolated cantilever beam extensions shown are illustrated using 16-footed USMP designs, the concept and method can. be extended to virtually any USMP with more than three feet, and as. such, the .number of electrical connections are not limited to the examples shown.
Examples of Quad USMP Footed Packages- The following illustrations depict a variety of four-sided, i.e. quad package constructions that can be fabricated with the USMP process and methods disclosed herein. A quad package is a package where leads or feet are present on three of four sides of the package. Quad packages may be square or rectangular.. The drawings generally include a perspective illustration- of the package and two underside illustrations ·■■ one using an exposed die pad version, the other comprising an isolated die pad version of the same package. In- most, cases the perspective view is identical for both the exposed die pad and isolated versions.
The relevant cross-sectional eutlhies from the previous section are identified on the underside views to unambiguously identify each package's construction. Moreover, using the USMP process any footed quad package can be converted into a quad leadless package, i.e. a QFN equivalent footprint having no feet extending beyond the plastic body's edges, simply by aligning the laser cuts for the metal removal to the same regions
and edges used to define plastic removal. For the sake of brevity, the USMP leadless versions of the following quad packages will be excluded from the drawings.
Figure 26A illustrates a. perspecti ve view of a 16- footed quad USMP package 900 comprising plastic 911. tie bars 914A through 9I4C. and feet 912A through 912H.
Inasmuch as package 900 is symmetrical, it will be understood that a similar tie bar and similar feet are located on the opposite, invisible sides of package 900. In short, in the square version shown the package feet are distributed four to a side. The tie bars are located in the comers. The package 900 may be fabricated with an isolated or exposed die pad. Figure 26B illustrates the underside view of the 16-footed USMP package 900 with ait exposed die pad 917 where the cross sectional construction in either the lengthwise or widthwise direction is illustrated by outline K-K! as shown in Figure J 9F, in contrast. Figure 26C illustrates the underside view of the 16-footed USMP with an isolated pad 917 where the cross sectional construction in either the lengthwise or widthwise direction is illustrated by outline L-L' as shown in Figure 19F.
Figure 27A comprises underside views of various 4 and 6-footed quad- USMPs with exposed die pads, In the illustration, of the upper left comer plastic 921. comprises exposed die pad 926, tie bars 924, and four feet 922, located one per side. In its minimum dimension, a quad package with 4 feet is not area effective and is better implemented as a dual package shown previously. With 6 feet, the utility of a quad USMP design improves. In the upper right hand corner, for example, exposed die pad 936 is substantially larger than the previously described die pad 926. The resulting package comprising rectangular shaped plastic 931 has six feet 932, with two located on the package ends and two on each lengthwise edge. The die pad size can increased by connecting: two feet 948 to die pad 946 shown in the lower left illustration of Figure 27 A as shown along outline A-A' or alternatively as shown in die lower right illustration by connecting four feet 958A and 958A. to die pad 956 as depicted along ending E-E'.
Extending the footed quad USMP design to higher pin counts is straightforward as shown by the underside views of 8- and 10-footed quad USMPs with exposed and isolated die pads illustrated in Figure 27B, In the upper left corner illustration of an 8~ footed USMP, square quad footed USMP comprises plastic 961, exposed die pad 966, corner tie bars 964, and feet 962 located two to a side, having a cross section depicted
along eutline Κ-ΚΛ I» its isolated-die-pad vefsion shown in the lower left illustration of the same figure, square quad footed USMP comprises plastic 961 , isolated die pad 967, corner tie bars 964, and feet 962 located two to a side, having a cross section depicted along outline L~L\
Extending the USMP design to rectangular !O-footed packages also shown in Figure 27B, the upper left corner USMP comprises plastic 971, exposed die pad 976, .comer tie bars 974, and feet 972 located two on teach, end and three on each side. The package has a cross section depicted along eutline E-Kf. in its isolated-die-pad version shown in the lower left illustration of the same figure, rectangular quad footed USMP comprises plastic 971 , isolated die pad 977, comer tie bars 974, and feet 972 having a cross section depicted, along eutline L-ΙΛ
The thermal performance and maximum die area of the aforementioned USMPs can be improved using die pad attached feet as illustrated in Figure 27C. The method is applicable both for exposed and isolated die pads. In the upper left illustration, an 8- ' footed, quad USMP comprises an exposed die pad 986 surrounded, by plastic 981 connected by vertical column 988 to two feet 982B as depicted along cross section of eutline A- A'. The remaining feet 982 A are not connected to the die pad. In the lower left illustration of Figure 27C, an 8-footed quad USMP comprises an isolated die pad 987 connected by cantilever 989 to two feet 982B as depicted along cross section of eutline C~C The remaining feet 982A are not connected to the die pad.
In the upper right illustration of Figure 27C, the 8-footed quad USMP comprises seven feet 982 not connected to exposed die pad 996 and one wide foot 993 connected to exposed die pad 996. The corners of exposed, die pad 996 on the opposing side not connected to foot 993 include tie bars 994. Similarly the lower right illustration of Figure 27C shows a the isolated equivalent of a 8-footed quad USMP comprising seven feet 992 not connected to isolated die pad 997 and one wide foot 993 connected, to isolated die pad 997. The corners of isolated die pad 997 on the opposing side not connected to foot 993 include tie bars 994.
Figure 27D comprises underside views of 8- and 10~ footed rectangular-shaped quad USMPs with exposed and isolated die pads, in the upper left illustration comprising plastic 1001 , exposed die pad .1006 merges into four feet 1002B while the remaining feet
.1002A are isolated from exposed die pad 1006, The lengthwise cross section is depicted along symmetric outline E-E' while the widthwise cross section is depicted along symmetric outline K-K', The resulting USMP comprises 10 feet but only seven unique electrica.1 connections. The package is the lower right, is identical in construction except that isolated die pad 100? replaces exposed die pad 1002B. In yet another minor variant of this package is shown in the upper right illustration of Figure 27D, where four pad connected feet IQ02B are replaced by with two wide feet 1003 on opposing edges of the package resulting in a 8-footed. USMP with seven unique electrical connections.
While the aforementioned three versions of the package defined by plastic 1001 in Figure 27D utilize a die pad connected to feet located on the narrow edges of the package, for the USMP shown in the lower left illustration isolated die pad 1007 is connected to three feet 1002B located instead on the longer edge of the package. The resulting USMP comprises 10 feet with 8 unique electrical connections.
Figure 28A comprises underside views of 12-footed square quad US MPs with exposed and isolated die pads formed within plastic 1011 , In both drawings the die pad, is connected in all four corners by tie bars 10.14 and surrounded by isolated feet 1012, three on each package edge. The left side illustration utilizes an exposed die pad 1016 while the right side package uses an isolated die pad 1017,
Figure 28B comprises underside views of 16-footed rectangular- shaped quad tJSMPs with exposed and isolated die pads formed within plastic 1.021. In both drawings the die pad is connected in all four corners by tie bars 1024 and surrounded by isolated feet 1022. five on each long edge of the package and three on each short edge. The top illustration utilizes an exposed die pad 1026 while the lower package uses an isolated die pad 1027-
Figtire 29 A. comprises an underside view of a 20- footed rectangular-shaped quad USMP formed in plastic 1031 with an exposed die pad 1036 a twenty isolated leads 1032 located with four on each end and six on each of the sides . Figure 29B comprises an underside view of the same 20-fboied rectangular-shaped quad USMP except that it utilizes an isolated die pad 1037,
Figure 30A comprises an underside view of a 48-footed quad USMP with an exposed die pad 1046 comprising plastic 1041 , fbnr tie bars 1044 located in the package
corners, and 48 feet 1042 located with 12 feet on each edge. Fig, MB comprises an underside view of a.48-footed quad USMP 'identical to the prior package except thai it employs an isolated die pad 1047. in another embodiment., the same package with isolated die pad 104? includes four vertical columns or posts I049A through 1049C to provide added stability to the leadframe. The posts are spaced sufficiently tar apart to avoid any risk of unintended PCB s horts to isolated die pad 1047,
Lastly, Figure 31 illustrates that any quad multi-footed USMP package can be integrated with an extended heat tab. As shown in perspective and underside views, USMP 1050 includes plastic 1051, die pad connected foot 1052F, eleven isolated feet 1052 A through 1052E, and 1052G through 1052L, extended heat tab .1058, and heat tab connected foot 1053. The design marries the low inductance and high pin count capability of a USMP IC package with the thermal dissipation capability of a USMP power package, facilitating advanced power IC designs.
Advanced USMP Leadframe Designs Using the USMP process, designs, and methods disclosed herein, leadframe features providing unique benefits unavailable in conventional packages can be realized.
One such unique benefit is selective tie bar removal. For example, the laser metal removal process shown in Figure Ϊ2Η is an example of a selective tie bar removal, in the example shown, rectilinear sawing of leads unavoidably leaves an unwanted tie bar artifact, lie bar 148, which cannot be selectively removed using mechanical means such as cutting, clipping, or sawing, without the risk of damaging the plastic mold and adjacent leads. Using USMP laser street fabrication, the unwanted metal protrusions can safely be removed by laser even between closely spaced adjacent feet or leads. Because the tie bar removal is an optical process, no space is required for clamping or holding the package of leads in place.
Another example of selective tie bar removal is illustrated in power packages such as the DPAK. or D2PAK, For example, in Figure 3SC the center lead of DPAK 31Q Is mechanically clipped after manufacturing, i.e. the center lead functions only as a tie bar and is not required by the customer for electrical connections. Because it is clipped mechanically, the tie bar lead unavoidably protrudes from the plastic body of the
package. The length of this protrusion is determined by the clearance- needed to mechanically clip the tie bar lead without damaging the package's plastic. The tie bat- lead protrusion is connected electrically to the package's die pad, undesirably increasing the risk of electrical shorts between the tie bar lead and the adjacent leads.
Moreover, m power devices, die die pad and package leads often are required to sustain a high voltage between them, commonly supporting 600V and in some cases as high as 1 ,000 volts. Even a partial solder bridge between the electrodes can result in electrical leakage currents, circuit malfunction, and even dangerous failures, in contrast to the conventionally fabricated DPAK,, using the USMP process Figure 21D illustrates tie bar 444B can be cut precisely flush with the package body, i.e. plastic 441, without any risk of mechanical damage to the plastic or bending of feet 442A and 442B.
The benefit of selective tie bar removal can be extended to multi-lead packages enabling leadframe designs and features never before possible. For example. Figure 32A illustrates a footed IC package made in. accordance with the USMP process, where tie bar 3 304A is positioned in between two feet 1 102 A and I I02B. Similarly tie bar 1 104 A is located between two adjacent feet. Together with die pad connected foot 1 102E, tie bars 1104 A and 1 104B hold exposed die pad 1 106 in place during manufacturing. The mechanical support during the package's fabrication is illustrated by the leadframe shown in Figure 32B revealing tie bar 1 1 14A connects to the leadframes main rail 1 119 while tie bar I I 14B and foot 1 1 32E extend to connect, with metal cross rails 1 1 18, together holding exposed die pad 3 306 in place, especially important during wire bonding and plastic molding.
After plastic removal defines the lateral extent of plastic 1301 , the package is then cut from the leadframe, i.e. singuiated. The package may be held temporarily in place by adhesive tape, often referred to as "blue tape." till the cutting is complete. The risk of the package twisting duration singulation from mechanical sawing or punching is completely eliminated by employing USMP laser metal removal . As a resul t, the sequence of cutting the feet or **d£junkihgn, i.e. Removing the tie bars is unimportant in the USMP process. In a dual pass USMP process, either sequence, cutting the feet then removing the tie bar protrusions or conversely removing the tie bars then cutting the feet, will provide the same result. Alternatively, both the feet and tie bars may be removed using a single pass
laser process where the laser cuts feet, then removes tie bars, then cuts more feet in sequence based on whatever the laser scan reaches .first.
An example of a USMP dual pass laser metal foot and tie bar cutting process is shown in Figure 32C where horizontal laser scans 1 12 IX cut and remove the metal leadframe connections across the street up to the package edge 1 120X (i.e., the ends of the feet) and where transverse laser scans 1 12 I Y in the vertical direction cut and remove the metal leadframe connections across the street up to the package edge defined by line 1120Y. The resulting package at this stage in the USMP process is shown in Figure 32D where tie bars 1. 1 14A and 1 1 MB protrude from plastic edge 1 101 by the same length as feet 1 102A and 1 102B. In the second metal removing laser pass shown in Figure 32E, the laser is rescanned in the horizontal direction by horizontal scans 1123X to selectively remove tie bar protrusion 1 124B, and again by vertical scans 1 123Y to selectively remove tie bar protrusion 1 124A. In the dual scan process the laser spot 1 120 can be adjusted by focus and power to cut a smaller spot than that used when, clearing the street by laser scans 122 IX and 1121 Y in the previous figures.
The resulting package 1 100 shown in Figure 32A accommodates the use of tie bars between feet., i.e. intra- lead feet tie bars, enabling stabilization of the package's die pad without sacrificing a foot by connecting it to the die pad just for the sake of providing mechanical support during manufacturing. For example, in the left side illustration of Figure .33 A, isolated die pad 1 147 A is stabilized not only by die-pad-counected wide foot 1 142C and conventional tie bar 1.1.44A, but also by intt a-iead tie bar 1 144D. Were mtra-lead tie bar 1 144D not employed, the corner of isolated die pad 1147A would be unstable, exhibiting diving board effects during wire bonding and potentially suffering dislocation, i.e. unwanted movement and repositioning, during molding. In a similar manner, isolated die pad 1 147B is held in place by three supports, namely by die pad connected foot 1 ! 42D; conventional tie bar 1 144B, and by inira-lead tie bar 1 144C.
In the right side illustration of Figure 33A, isolated die pad 1 145 A is stabilized by die-pad-eonnecied wide foot 1 152(1, conventional tie bar 1154 A. located on the end of the dual package having no feet, and by intra- lead tie bar 1 154D located on the footed side of the package. Isolated die pad 1 157B is supported by one conventional tie bar
.1 154B and by two intra-lead tie bars 1154C and 1154E on opposing sides., forming a stable triangle base.
Intra-lead tie bars also make advanced interconnections possible within a USMP implemented package. For example, in the lower left illustration of Figure 33B a 10- footed USMP contains two die pads - one exposed and the other isolated, along with an isolated intra-package interconnection. Such interconnections are valuable when a.
customer's PCB design requires a specific pinout package not possible through wire bonding. As shown, exposed die pad 1 166 is stabilized by conventional tie bar 1 164B and intra-lead tie bar 1164C while isolated die pad 1 167 is stabilized by the support triangle comprising conventional tie bar 1 164A and intra-lead tie bars 1 164D and 1 164B. Isolated intra-package interconnection 1164G connects foot 1162H on one side of the package to foot 1 162E on the opposite side of the package diagonally located near opposite corners of exposed die pad 1 166.
Intra-lead tie bars are also applicable for quad USMPs. For example, in the upper right illustration of Figure 33B a quad footed USMP contains exposed die pad 1176 stabilized by conventional comer tie bar 1174C and by intra-lead tie bar 1 174D while isolated die pad 1 177 is stabilized in four locations, namely with corner tie bars 1174A and I174F and with intra-lead tie bars 1174B and Π74Ε. As described previously, even the removal of corner tie bars using mechanical means such as employed in LQFP packages is difficult, wasting space and risking damage to the package's plastic body.
Using the USMP process, leadframe geometries .and package features can be flexibly determined in two different ways, namely
♦ The geometric feature can be created as part of the leadframe fabrication process
♦ The geometric feature can be created by laser ex post facto, i.e. performing
patterning by laser after molding either before or during singulation
An example of such a geometric leadframe feature is the thermal comb shown in Figure 34 A where a DPAK or D2PAK package includes plastic 1201, feet 1202 A, 1202B an 1202C, tie bars 1204 A, cantilever extensions 1209A and 1209C, and exposed die pad 1206. The exposed die pad 5206 merges into a heat tab 1208 A with a thermal comb comprising metal lingers 1208B, 120SC, 208D, and 1208E. The fingers as shown
are constructed using the full leadframe thickness, i.e. a vertical column 100 A originally shown in Figure 9A. The inner periphery of the fingers includes a wide serpentine foot 1203 for solder to wet onto. With its large periphery, the comb structure maximizes electrical thermal and electrical conduction between the package and the PCB. improving thermal conduction. The exposed solid metal portion of the heat tab, i.e. heat tab 1208A maximizes thermal convection into the air. By adjusting the relative area devoted to solid heat tab 1208 A and the thermal comb, the amount of cooling through thermal conduction into the PCB and thermal convection into the air can be adjusted by design.
Figure 34B illustrates the case where the thermal comb is prefabricated into the leadframe. As shown, thermal comb fingers 1218 and their associated serpentine foot 1213 are extended beyond the package edge into cross rails 1229Y, as are the extensions of feet 1212. On the perpendicular package edges tie bars 1214 connect to rails 1229X and 1220W. The package edges are defined in the lengthwise by laser outlines 1220Y defining the length of package feet 1.212 and thermal comb fingers 1218, and in the wtdthwise direction by laser outlines 1220X cutting tie bars 1214 flush with plastic 1201. As shown in Figure 34C, between the outlines 1220Y numerous vertical laser scans 1221 Y are employed to remove leadframe connections to the package feet and thermal comb fingers. Similarly, multiple horizontal laser scans 122 I X are preformed to remove tie bars between outlines 1220X.
In another embodiment of a DPAK or D2PAK package with a thermal comb, shown in figure 35A, the leadframe is modified where the thermal comb 1228B connected to heat-tab 1228 A comprises thin metal, i.e. comprising the same thickness metal as feet .1212. This version facilitates easier wave soldering but contains less thermal mass than the prior version. More importantly, by employing thin "feet" metal, for the thermal comb, the comb' s features can be fabricated using a laser after package molding. The leadframe prior to singulation is illustrated in Figure 35B illustrating extended thin metal foot 122SB, Prior to singulation, holes can be cut with the laser to form the thermal .comb as shown in Figure 35C where horizontal scans 1226 remove imdiiple areas .1225 within thin metal extended feet 1228B. The opening dimensions can be determined by the number of scans and using focus to control the laser spot size 1227.
In alternative embodimeat shown in Figure 36 A, the thin metal extended foot 1228B is patterned using a laser to open bolt-hole 1225. In a manner similar to ibrming a thermal comb, the fabrication process shown in Figure 36B involves multiple overlapping horizontal scans 1226 removing a circular area 1225 within thin metal extended foot 1228B.
Advanced VSMP Leadframe Processes As described previously, the USMP leadframe must be plated to improve solderabiiity and to inhibit copper oxidation, in the USMP process, the plating may be performed at several different times and by several different methods, namely
• Prior to package manufacturing during leadframe fabrication, by "pre-plating" the leadframe over its entire surface
• Prior to package manufacturing during leadframe fabrication, by "pre-plating" the leadframe selecti vely over a portion of its surface, sometimes referred to as "patterned leadframe plating"
• After molding but prior to metal patterning and singulation
The various mamrfeeitiring process sequences are represented in the flow chart of Figure 37, For the first case, pre-plating the entire leadframe, the USMP process sequence comprises leadframe formation (step 1250A), leadframe pre-plating (step 1250B), molding (step 1250C), laser plastic removal (step 1250D) and metal patterning and singulation (step 1250E). In the second case, i.e. patterned leadframe plating (step 1252B) replaces step 125GB. In the third process option, leadframe pre-plating (step 12500B) is skipped, as indicated by dashed line 1251 A, and leadframe formation (step 1250A) is immediately followed by molding (step 1250C) which is then followed by plastic removal (step 1250D). After plastic is removed from the street, the- leadframe is then plated in what is referred to as "post-deflasli leadframe plating" (step 1251B) followed by metal patterning and singulation I250E, The term de-flash refers to the removal of stray bits of plastic resulting from sawing or punching but is not an issue with laser plastic removal.
An example of a pre-piated !eadfranie is shown in Figure 38, where copper die pad 1261 is coated on all sides by plated metal. 1269 and foot 1262 and. cantilever 1263 as well as the vertical column connecting them are coated by the same plated metal 1269, While pre-plated leadfram.es are generally fine for small packages, for large and high pin count packages and power packages the packages may suffer poor adhesion and delamination between the plastic and the plated metal. For example plastic 1260 A may delaminate in regions 1265 A and 1265B. Surface 1265C may also delaminate from, underside plastic 126GB. Delamination in any area may cause a reliability failure.
By using selective plating, delamination can be avoided by preventing plating in lead-frame areas sensitive to delamination risk. As shown in the cross-sectional view of Figure 39. regions 1269 A, 1269B arid ί 269C are clear of selectively plated metal 1270 because plating in those regions was intentionally inhibited. Three methods may be used for selective plating. In one case, a seed layer such as titanium, platinum, palladium, nickel, or various refractory metals is deposited, in the areas where plating is desired. .Numerous methods may be employed to create a selective seed layer.
* The seed layer can be deposited locally through an intervening stencil mask so that it is present only where the plating is intended to occur. This method to form a patterned seed layer is referred to herein as a "patterned deposition" process
* The lead.fr ame is coated or deposited uniformly with the seed layer metal, then is selectively coated with a photoresist, through a patterned stencil mask, exposing only those areas where the seed layer should be removed. After baking the photoresist to harden it, the seed layer is then etched in an acid that attacks the specific metal but either does not etch or only slowly etches copper, thereby removing the exposed seed metal. After removing die photoresist and cleaning, the leadframe is ready for plating. This method to .form a patterned seed layer is referred to herein as an "masked etch-back" process
» The leadframe is coated with a photoresist through a patterned stencil mask, depositing photoresist only on those areas where the seed layer is to be removed. The result is a patterned leadframe some areas open to the copper and others covered by photoresist, After baking, the seed layer metal is deposited atop the patterned leadframe, some metal being deposited directly onto the copper, while
m other areas the metal is deposited atop the photoresist Cleaning the photoresist "Sifts off and seed metal on top of it leaving the copper leadfirame with seed metal present only where plating is intended to occur. This method to form a patterned seed layer is referred to herein as a "lift off' process.
♦ The seed layer could be printed onto the leadframe with a printer, dispensing seed metal in a solvent suspension that is dried dining printing by a lamp, laser, or heating block then baked to completely evaporate the solvent. After baking the leadframe is heated to a high temperature to bond the seed layer metal to the copper leadframe. Only the printed areas retain the seed layer. This method to form a patterned seed layer is referred to herein as a "metal printing" process.
After forming the patterned seed layer, the leadframe is ready for selective plating. The plating chemistry must be adj usted so that in the absence of the seed layer plating does not occur on the bare copper.
In a second method, plating is performed everywhere and selectively removed by masking and etching, in a third method shown in Figure 40, layers Ϊ 271 A and 127 IB of a plating inhibitor; i.e., a material that prevents plating, such as a glass or an organic compound, is silkscreened or printed onto leadframe 1261 prior to plating. After plating of plated metal 1273 A the inhibitor layers 1271 A. and 127 IB are chemically removed.
Aside from ' leadframe plating, another valuable feature of the USMP design relates to soldering a power package or an exposed die pad onto a PCB. Since wave- soldering only applies solder from above the component, then there is no way to get solder beneath a large metal area using the wave-soldering process. Conversely, as described previously, the refJow PCB is expensive compared to wave-soldering. A footed package, by itself does not address this issue and must instead rely on the same technique used for OPAK assembly today, i.e. to perform a dual-pass PCB assembly with one pass for attaching power devices or packages with exposed die pads and another pass for wave-soldering leads onto the hoard.
The first pass of a dual-pass PCB assembly is shown in Figure 41 A where in the top illustration PCB 1300 with copper traces 1301 A, 1301B, and 1301C is coated with either conductive epoxy or solder paste, e.g. solder paste layer 1302A atop copper trace
.1301 A and solder paste layer 1302B atop copper trace 1301.B. Copper trace I301C., not used for a power device, is left uncoated, as are most of the PCB traces. The exposed die pad package is then positioned atop the epoxy or solder paste as illustrated in the middle figure. As such, exposed die pad 1305 A sits atop solder paste layer 1302A and foot I305B sits atop solder paste layer ί 302B. After heating in an oven, the solder paste melts and exposed die pad 1305A sinks down into the solder paste layer 1302 A, which turns into molten solder. Similarly, foot Ϊ 305Β sinks down into solder paste layer 1302B, which melts into molten solder. After the solder hardens an electrical and thermal connection to the PCB copper conductors is formed as shown in the bottom illustration. Alternatively, if a conductive epoxy is used in place of solder paste, then the package is mechanically poshed down into the epoxy and the epoxy is left to cure. Fast set epoxies, can cure in 30 minutes to one hour.
After the solder or epoxy attach process, during wave-soldering, additional solder flows onto the top of the feet. Since the wave-soldering achieves, a higlMmaiity electrical connection between the PCB copper traces and the feet, the main purpose and benefit of the solder paste or epoxy is to facilitate improved thermal conduction into the PCB, not to act as the primary path for electrical conduction. In order to minimize the thermal resistance, the final thickness of the epoxy or solder layers 1302 A and 1302 B should be as thin as possible. If it is deposited too thick, excess solder paste or epoxy may
"squeegee" out the sides from underneath the package and lead to PCB shorts. Such an issue is especially problematic for dual exposed die pad packages. Minimum distances of 1mm to 1 ,5mm or even greater may be required.
If the epoxy or solder paste layer is sufficiently thin, then solder paste layer 1302B under the package foot 1305B can be eliminated, as the electrical connection between foot 1305 and copper trace 1301 B can be achieved using the subsequent wave- soldering process. If, however, the layer of solder paste applied under the exposed die pad 1305 A is too thick, then, as shown in top illustration of Figure 41BS foot 1305B may be separated from copper trace 1301 B by gap 1307. During heating, the package may tilt, such that the package and exposed die pad 1305 A are no longer parallel to PCB 1300, The result is that solder paste layer 1302 A melts into a «οη-uniform wedge of solder 1302Z, making wave-soldering the foot 1305B to copper trace 530 I B difficult
Moreover, foot. 1305B my touch copper trace B01 B at only a single point 1308, making a uniform solder joint difficult to reproduce consistently.
One solution, shown in the modified USMP fabrication flow chart of Figure 42A, is to insert an extra "solder printing" step (step 1250G) into the process flow, between plastic removal (step 1250D) and metal patterning arid singulation (step 1250E). While this extra step appears to complicate the process, it completely eliminates the need for dual-pass PCB assembly. Using this process improvement, any USMP package with an exposed die pad can have an optionally thin solder coating on the bottom side of its feet and the exposed die pad. As shown in the top cross-sectional view of Figure 42B, a power package with an exposed die pad 1315A is coated with a thin solder layer 1319 A, including a thin solder layer 13 I9C under die pad-connected foot 1315C and a thin solder layer 1319B under foot 1315 B, Similarly, as shown in the lower cross-sectional view, in any USMP 1C package with an exposed die pad, either dual- or quad-sided, the exposed die pad 1425A is coated with a thin solder layer 1329A. Likewise foot 1325C is coated with thin solder layer 1329C, foot 1325B is coated with thin solder layer 1329B, and other feet (not shown) are also coated with thin solder layers. The solder layer may be deposited or printed.
As illustrated in the process flow of Figure- 43A, attaching a power package with exposed die pad 1315 A and an USMP footed IC package with exposed die pad 1325 A to a PCB can be performed in a single step, bringing them in contact with the PCB and holding them, in place to melt the solder paste, resulting in .the structure shown in. the cross-sectional view of Figure 43B, where copper foot 1315B is melted into solder layer 1319B atop copper trace 1331 B atop PCB 1330. After heating, non-power packages, such as a USMP IC package with plastic .1334, are attached by glue or held in position mechanically. Unlike the feet in power and exposed-die pad packages, copper foot 133SB sits directly atop copper trace 1331 P on PCB 1330, with no intervening solder layer. After wave-soldering, as the cross-sectional views of PCB 1330 in Figure 43C show, solder layers now cover ail the copper feet, i.e. solder layer 1.340C covers foot 13.1.5C, solder layer 1340B covers foot 131 SB, solder layer 1340C covers foot: I325C, solder layer 1340E covers foot 1325B, and solder layer 1340F covers foot 13358. In this
maimer, all power and non-power packages are niaoufaeturecl in a wave-solder flow without the need to coat the PC B with solder paste even to assemble the power devices.
The left side drawing in Figure 44A illustrates the underside view of the solder plated DP AIL The solder paste is printed, with solder paste layer 1404C covering exposed die pad 1403 and die-pad attached foot I402C, with solder paste layer 1404A covering foot 1402 A, and with solder paste layer I404B covering foot 1402B. After heating the solder paste changes into solder in the same locations.
In an improved embodiment of a solder-plated USMP package shown in the right side drawing of Figure 44A, holes 1406 are in included in solder paste layer I405C, and solder paste layers 1405 A and 1405B are made in donui shapes so that some areas are devoid of solder even after the solder paste is melted into solder. The purpose of the holes devoid of solder is to facilitate locations for test probes to contact the package during manufacturing without gumming, up the probe tips with solder.
This method is equally applicable for USMP IC packages. As shown in Figure 44B, the package on the left utilizes uniform solder paste layer 1414C on exposed die pad 1413 and uniform solder paste layer I414A on the package's feet 1412. In contrast, the package on the right employs donut-shaped solder paste layers 1415 A on the packages feet 1412 and holes 1416 in the solder paste layer 14 ISC located on exposed die pad 1413.
As illustrated in the cross-sectional view of Figure 44C, during manufacturing electrical tests, probes 1.420 are positioned to contact exposed die pad 1403 and foot 1402 through openings 1406 in the solder layer 1405. In this manner, the probes do not scratch the solder and gum up the probe tips, compromising the probe's ability to achieve a good electrical contact to the device under test.
Another consideration in USMP leadframe design specially relates to isolated die pads. As shown in the cross-sectional view of Figure 45, dining wire-bonding of semiconductor die 1459 mounted atop m isolated die pad 1457 to the cantilever sections 1454 A and 1454B connected to feet 1452.4 and 1452B, a custom heater block 1460.must be designed to prevented spring board effects and oscillations during the bonding process. While customization is possible, another alternative is to fill the void beneath the isolated die pad with an electrically insulating thermally conductive compound such as
poiyarnide or epoxy filled with diamond dust, carbon nanotubes, or ceramic powder. Such a process, while simitar to a pre-moided leadframe, does not use the same mold compound used to form the plastic but instead uses a material optimized for its good thermal conduction properties.
The resulting leadframe structures, shown in Figure 46, comprise the thermal compound 1465 or 1466 permanently affixed to the underside of the leadframe. during manufacturing and afterwards in the final product. In the top illustration, the thermal compound 1465 is copianar with the top surface of isolated die pad 1457 and cantilever sections 1454 A and 1454C. In the lower illustration, the thermal compound 1466 is copianar with the bottom of isolated die pad 1457, and the gaps between the die pad and cantilever sections 1454A and 145B are filled during molding.
The fabrication sequences for the two versions are slightly different In Figure 47, the fabrication for the first case is illustrated, where the top of the leadframe elements 14S4A, 14S4B, and 1457 are covered with a temporary adhesive layer 1464, e.g., blue tape, before the thermal compound is 1465 is printed onto the backside of the leadframe. The thermal compound naturally fills the voids between the die pad 1457 and the cantilever sections 1454A and 1454B, making it copianar with the top edge of isolated die pad 1457. After printing, the temporary adhesive layer 1464 is removed.
In the fabrication sequence of Figure 48, the backside etch of leadframe 1468 is completed, forming a thinned section 1467, shown in me top illustration. Before preforming the frontside etch, however, thermal compound .1466 is printed or coated into the cavities created by the backside etch. The frontside etch is then performed, as described above, resulting in the leadframe shown in the bottom illustration, with thermal compound 1466 filling the region beneath isolated die pad 1457. The resulting package offers a benefit of enhanced thermal conduction and lower thermal resistance than conventional isolated die pad packages. Furthermore, the thermally conductive compound provides mechanical support during wire bonding while still allowing a flat healer block to heat the die and leadframe during the wire bonding process to improve bonding adhesion. Thus a specialized beater block, such as heater block 1460 shown in Figure 45, is not required.
Practical examples of USMP Designs As described, the USMP process may be employed to universally replace any leadiess package or any leaded or gull wing package with either a leadiess or a footed package equivalent simply by changing the Seadframe design avoiding the need for new or custom inold tools. The flexibility and universality of the 'USMP process and design supports any number of manufacturing, design, product:, and go-to-market strategies including,
♦ Reducing manufacturing cost and improving factory flexibility and throughput by converting the conventional saw type and punch type QFN manufacturing to the USMP process, thereby enabling multiple packages to be fabricated on one common line, i.e. improving package manufacturing through product line consolidation,
♦ Con verting reflow PCB assembly to a lower cost wave solder PCB assembly by replacing an existing leadiess package with, a USMP footed package, using the existing die with no change in the PCB area or traces, i.e. a cost reduced pin-for- pin replacement,
♦ Maintaining the same PCB Sanding pad locations, design a new larger die with improved performance, e.g. high current. Sower resistance, more functionality, etc., benefitting from the improved area efficiency of the USMP made package, i.e. a performance upgraded pin-for-pin replace meat,
♦ Shrinking the PCB area, using the existing die package in a more area efficient USMP made package, i.e. a package shrink,
♦ Shrinking die PCB area, using a customized die designed to fit in a smaller U SMP made package, i.e. a die. and package shrink, 'potentially compatible with a standard PCB trace of a smaller package, e.g.. changing from a 3x3 DFN to a 2x3 DFN.
While, using the USMP manufacturing method, the PCB footprint for footed packages housing a. die originally designed for a leaded package may be made smaller than their gull-wing equivalents, i.e. the package size may be reduced, in general it is commercially easier to adopt the fixed package footprints of industry-standard conventional packages and then maximize the die size. Comparatively, a footed USMP
will be slightly less area-efficient than an etch type QFN or DFN leadless package occupying the same PCB space and PCB landing pad layout and slightly more area- efficient than a punch-type QFN or DFN leadless package occupying the same PCB space and PCB landing pad layout but significantly more area-efficient than any equivalent leaded, gull-wing, or bent-lead package. In the case of LQFP packages, the footed USMP version will be substantially more efficient. The definition of the area efficiency used herein is the maximura die area for a given package di vided by the PCB area needed to mount the component as defined by the lateral extent of the plastic or the conductors used to mount the component, whichever is larger, i.e. area efficiency ΐ\&∞ -
ΑπΐΗχ iiie t ApCB
Figure 49A illustrates an example wherein a saw-type QFN3x3 package leadframe 1500 is converted into its wave-solder compatible footed equivalent leadframe 1510, whereby die pad 1506 is replaced by die pad 1516, leadless landing pads 1502 are replaced with wave solderable feet 151:2, corner tie bar 1504 is replaced by corner tie bar 1514, and plastic \ 501 is repl aced by plastic 1511.
The conventional package shown is a saw-type QFN leadless package because a saw, not a mechanical punch, is used to cut the plastic and metal landing pads to their proper dimensions. As a leadless package, after singulation no metal protrudes past the edge of the plastic, where the package's conductive landing pads 1502 are located entirely beneath plastic body 1501 , Each conductive landing pad is 0.4mra long by 0.3mm wide to enable reliable soldering. The landing pad or "pin" pitch, i.e. the spacing or repeated spacing periodicity of the conductive landing pads, is 0.8mm. At this pin pitch, a 3mm by 3mm quad package contains 9 electrical connections, three on each edge. An exposed die pad 1506, held in place by tie bars 1504, can accommodate a maximum die size of 1.65mm by 1.65mm.
By converting a QFN package into a footed version of a QFN, i.e. a QFF, the USMP process can be used to eliminate the need for solder reflow based PCB assembly. Using the USMP process to convert a saw type QFN with ieadframe 1520 into the footed QFN shown by leadframe 1530 in Figure 49B without requiring a change in the PCB traces and solder points requires positioning feet 1532 in the same locations where the conventional QFN's landing pads 1522 are located. Feet 1532 must extend past plastic
body 1531 by a distance sufficient to insure good solder coverage, i.e. the package's "outer lead length". As described in the corresponding table, a length of '0.1.25mm was chosen as the "outer lead length". To maintain compatibi lity with conventional QFN assembly, feet 1532 comprise 0.4mm-long by 0.3mm-wide solderable areas, the same as a QFN, except that the feet protrude 0.1.25mm beyond the edge of plastic .1531 with another 0,275mm conductive "heel" portion of the foot, remaining beneath the package.
In this manner the footed package shown can be assembled onto a PCB using either wave-soldering or reilow solder assembly, without requiring any change in the PCB copper traces. Compatibility of the footed package with both wave-solder and reflow assembly is another beneficially "universal" aspect of the footed package, uniquely available using USMP designs and methods disclosed herein. No other such package is capable of replacing both leaded and leadless packages with the same design.
As mentioned previously, on an area basis the footed QFN is slightly less area efficient than an equivalent^ sized saw type QFN package. Because the standard QFN's footprint sets the outer dimension, allocating space for package feet reduces the available area for the die pad. Consequently, the area of exposed die pad 1536 necessarily smaller than QFN die pad 1526. The resulting footed package has a maximum die size of only 1.4mm by 1.4mm, a reduction of approximately 20% in die area compared to a saw-type QFN package.
To regain area lost by the solderable feet, a slightly larger package is required. For example, increasing the size of 3x3 footed USMP to a 3x4 form factor increases the maximum die size to 1.45mm by 2.3 mm, Although the package is slightly larger, the resulting footed package is wave-solder compatible while the leadless package is .not. Moreover, the footed package is significantly smaller than any wave-soSderable leaded packages capable of packaging comparably sized die.
The same production line used to make a USMP footed package can also be used to fabricate leadless packages. Using the USMP process to convert a saw-type QFN having leadfiarne .1520 into a USMP-nianufaeiured QFN of identical PCB footprint requires no changes in the die, die leadframe or PCB traces. By converting fabrication of a leadless package such as the QFN or DFN from a conventional saw-type singulation to the USMP process, package fabrication of leadless and footed packages can be performed
on the same manufacturing lines without investment in package-specific equipment* specifically; eliminating the need for punch singulation machine tools and expensive leadframe-specific "machine iooi die". (The machine tool die is a cutting tool and should not be confused with a semiconductor die). The resulting manufacturing is lower cost and more flexible. Lacking conductive feet, however, the leadless QFN package still requires expensive reffow-based PCB assembly, even using the USMF manufacturing process.
Figure 49B illustrates the conversion of a 16-pin saw-type QFN4x4 package Ieadframe 3520 into its wave-solder compatible footed equivalent Ieadframe 1530. The impact of this change to accommodate the foot, is that plastic body 1521 is reduced slightly in size to form new plastic body 1531, and corner tie bar 1524 is in the final package shortened in size to form new tie bar 1534, cut by laser to be flush with the exterior surface of the plastic body 1531.. Using a foot length of 125um and a total foot dimension of 400μηι, the same as a QFN landing pad width, the table describes that a saw-type QFN is capable of packaging a die up to 2,65mm by 2,65mm while the footed version accommodates a slightly smaller maximum die, in this example, 2,4mm by 2.4mm, representing a reduction of approximately 18% in die area.
If, however, we compare the 4x4 footed package to the "punch type" QFN Ieadframe 1540 shown in Figure 49C, the equivalent area footed package 1550 offers a 25% larger die area, i.e. the footed package houses a semiconductor die 125% that of the punch type QFN maximum die size of 2.145mm by 2.145mm. The punch type QFN 1540 maximum die size is smaller because its conductive landing pads 1542 must extend deeper into the package than feet 1552 to prevent being ripped from the plastic 1541 during punch singulation, a mechanical process which imparts significant stress of the package's plastic and conductors.
The impact of converting a punch type QFN 1549 into an footed package 1559 with the same PCB dimensions, is that die pad 1546 increases in size to form larger die pad 1556, plastic body 1541 is increased in size to form new plastic body 1551 , and comer tie bar 1544 is adjusted in size to form new tie bar 1554, cut by laser to be flush with the exterior surface of the plastic body 1541.
So the footed QFN designed for assembly on a PCB with a 4x4 trace has a maximum die size 18% smaller than a saw type QFN and 25% larger than a punch type
QFN as summarized in the table shown in Figure 49D. Considering that the PCS area required for mounting a 4x4 QFN on a PCB is actually 4.3mm by 4.3mm, the area efficiency r\m* of the three packages can be compared directly as 38% tor either the saw type QFN or the USMP singulated QFN, 31% for the QFF (footed QFN), and 28% for the punch type QFN.
Note that the largest die size and highest area efficiency for a 4x4 package, the saw type QFN, can also he fabricated by the USMP process without any required change in leadframe design or the matrafacturing process (except for feptOgrammbg the laser scans). In fact the USMP process involving laser metal removal arid singulation can be used to interchangeably manufacture both the USMP leadless QFN44 and the tooted QFN44. The footed package nomenclature QFF represents a simple modification for the acronym QFN meaning "quad flat no-lead" package into a QFF meaning "quad flat footed" package.
Another consideration in the leadframe design is the impact of pin pitch, i.e. foot- to-foot spacing on the number of electrical connections for a given package and its effect on PCB assembly. At a pin pitch of 0.5mm, a 4x4 QFN or footed QFN package integrates 24 feet, six on each side. At small pin pi tch dimensions, there is a risk of electrical shorts in a wave-soldering process. The resulting yield loss depends on the PCB assembly factory and the antiquity of its equipment. As shown previously, the same 4x4 package can be adjusted to 0.8mm pitch as in leadframe 1530, where the number- of feet is reduced to 16 in total, four on each side.
Alternatively, the package can utilize a 0.6mm pitch resulting in 20 feet, fi ve on a side. In extreme cases where very older factories are employed, the pin pitch can be increased to 1.0mm with 12 feet, 3 on each side, or to a pin pitch of 1.27mm in which case the number of feet is reduced to or 8 feet having 2 on each side, A summary of pin pitch versos number of leads for a 4x4 footed package is shown in table below:
As mentioned previously, the leadless package names described above apply to either QFN packages fabricated conventionally or using the USMP process disclosed herein. The footed package names represent a simple modification for the terminology QFN meaning "quad flat no-lead" package into a QFF meaning "quad flat footed" package.
While the USMP process can be used to fabricate leadless and footed quad packages, the disclosed method is equally applicable for producing dual-sided packages. Figure 4.9 E illustrates the conversion of a saw-type DFN5x6 package leadframe 1560 into its wave-solder compatible footed equivalent !eadframe 1570. The impact of replacing leadless landing pads 15:62 to wave-solder compatible feet 1672, is that plastic body 1561 is reduced slightly in one dimension to form new plastic body 1571, while in the other dimension the plastic body size does not change so that saw cut tie bar 1564 tie and laser cut bar 1564 remain identical in size. Considering that only one dimension changes, and using a foot length of 0.125mm and a total foot dimension of 0,4mm, the table reveals that the maximum die size of a saw type DFN package is 4.35 mm by 4.55mra. The footed version, the footed DFN of "DFF" is nearly the same at 4.35mm by 4.30mm, a reduction of only approximately 6% in die area. The footed package is, however, wave-solder compatible while the leadless package is not Moreover, the USMP process can fabricate both leadless QFN and footed QFF packages interchangeably even on the same manufacturing line and equipment.
Figure 50A illustrates the conversion of a 2-lead DPAK or TO-252 package leadtrame 1580 into its footed equivalent leadframe 1590A, Because of the area savings, a substantially larger package is achievable using the footed package using a 1.6mm soklerable foot length, the maximum die size of the conventional DPAK 1589 is 3,05mm by 4.98mm while the footed DPAK 1599 A can house a die 4.05mm x 4,98mm or 133% of the conventional maximum die size. To achieve this magnitude of improvement
-mechanically bent-leads 1582 are replaced -by USMP fabricated feet 1 S92A, the dimension of plastic body 158! is increased to form elongated plastic body 1591 A. die pad and heat tab 1586 is increased in area to form larger die pad and heat tab 1596 A, and mechanically-clipped tie bar 1584 protruding from plastic body 1581, is replaced by laser-trimmed tie bar 1594 A cot flash with the vertical edge of plastic body 1591. A.
In an alternative embodiment of the design, footed DPAK 1590B, shown in Figure SOB comprises a modification to feet 1592B where the solderable portion of the foot remains 1.6mm in length but only 0.25mm of the foot extends laterally beyond the edge of plastic 1591B. This USMP design principle is further elaborated in the perspective views of Figure SOD where conventional DPAK includes mechanically bent leads 1582 contacting the PC-B for a distance L, in the prior example where L-l ,6mm. In design A of the USMP fabricated DPAK 1599 A, feet 1592A ex tend beyond the vertical edge of plastic 1591 by a full distance of L=l ,6mm, while in design B of the USMP fabricated DPAK 1599B, feet 1592B extend beyond the vertical edge of plastic 159.1 only by a length comprising a fraction of the total foot length L, e.g. 0.25mm to 0.5mm with remainder of the foot length L remaining under the package and not visible from above.
The benefit of footed DPAK 1599B design B is that plastic body 1591 B is extended allowing die pad and heat tab 1596B to be further expanded, increasing the maximum allowable die size to 5.29mm x 4.98mm, representing a substantia! die size increase, i.e. offering the ability to package a die over 173% that of a conventional DPAK •using the same PC B board space. Tie bar 1594B can also be laser trimmed flush with the vertical face of plastic 1591 B, eliminating the unwanted protrusion of mechanically trimmed tie bar 1584 is conventional DPAK assembly.
A direct comparison of the two U SM P footed DPAKs 1599A and 1599B to the conventional DPAK 1589 in Figure 50C illustrates that in the USMP design, space saved reducing the exterior length ΔΥ, where ΔΥ¾ < ΔΥ2. < ΔΥι is used to increase area of die pad and tab 1586 to achieve larger area die pad and heat tabs 1596A and 1596B. As shown, the length "L" of the copper lead contacting the PCB, remains constant at L ~ 1.6mm. while AY, the protruding length of the lead or the foot, varies from ΔΥ3 ~ 2.7mm for the DPAK to ΔΥ2 - 1.6mm and ΔΥ2 - 0.25mm for the footed designs. So although and the positions of the PCB landing pads 1587 and 1597 remains fixed, the die pad and
-maximum die size of the package increases. As another benefit, ia footed DPAKs 1599A and 1599B. tie bars 1594A and 15948 can be completely enclosed, within plastic body 1591 A and plastic body 1591 B respectively, while in the conventional DPAK 1589, tie bar 1584 unavoidably protrudes from the package and plastic 1581, increasing the risk of unwanted and potentially dangerous electrical shorts. As further illustrated in Figure 5MI and Figure SOD, by avoiding mechanical lead bending the height of footed packages 1599A and 1599B can be made significantly thinner, typically 30% to 70% thinner than conventional DPAK 1589, depending on the thickness of the ieadframe and the desired amount of heat spreading.
A comparison of the conventional DPAK 1589 to design- A footed DPAK Ϊ599Α and design-B footed DPAK 1599B is shown in Figure 5βΕ. As shown, the USMP-based packages are able to house maximum die sizes 33% and 74% larger than the conventional DPAK. In USMP manufacturing, singulation uses a laser instead of a mechanical tool, and does not require mechanical bending or forming. As such USMP-fahneated DPA Ks can be produced in higher-throughput lower-cost .matrix leadframes rather on single- package strips, reducing costs and improving manoiacturabiiity.
Figure Si A illustrates the conversion of a SOT23 package Ieadframe 1600 into its footed equivalent Ieadframe 1610 where gull-wing leads 1602 A, 1602B, and 1602C are replaced by wave-solder compatible feet 1612 A, Ϊ62Β and 1612C5 lead extensions 1604 are replaced by cantilever -extensions 1614, and the size of die pad 1607 is increased substantially to form new die pad 1.617. In the conventional SOT23, isolated die pad 1607 connects to lead 1602C, while the other two leads 1602 A and 1602B connect to isolated lead extensions 1604 for bonding. All the leads comprise mechanic-ally bent gull wing leads requiring long lead lengths -~ in fact lead lengths longer than the die pad is wide. The maximum die size of the conventional SOT23 shown is approximately 0.765mm by i .706mm. In sharp contrast to gull wing SOT23, the tooted version shown by matrix Ieadframe 1610 comprises isolated die pad 1617 connected to foot 1612C, and two feet 1612 A and 16B connected to cantilever extended beams 1614. if desired the beams can be further supported by tie bars (not shown).
By eliminating the wasted space consumed by the gall wing leads, the footed package allows the plastic and the isolated die pad 1617 to expand in the direction of the
leads, increasing the maximum die size to 1.365mm x 1.706mm, increasing the maximum die size to 1 78% that of present day SOT23s. A side-by-side comparison of the conventional SOT-23 3609 and the footed SOT-23 1639 and their corresponding leadfraraes 1600 and 1610 is shown in Figure 5ΪΒ illustrating that the PCB area efficiency of the conventional SOT-23 of only 13% can be improved by the USMP footed package to 24%, and the footed SOT-23 can house a die 78% larger than the conventional SOT-23 package.
In addition to offering the ability to improving transistor package area efficiency, i.e. putting a larger die in the same package, USMP design methods may also be applied to substantially reduce the size of gull wing IC packages. For example in Figure 52A a TSSOP-8L package 1649 fabricated from leadframe 1640 and comprising dual tie bars 1644, gull wing leads 1642, and isolated die pad 1647, is converted into its footed equivalent package 1659A while preserving the same PCB layout for soldering. As shown, footed package leadframe 1650 A comprises feet 1652 A, a larger isolated die pad 1657 A, and additional tie bats 1654A for greater stability. By designing the foot for the same solder length as the conventional gull wing package, namely 0.6mm, but eliminating the wasted space devoted for lead bending and forming, the maximum die size of the footed package 1659 A increases to 3.8mm. by 2.2mm, a 49% increase over that of a conventional TSSOP8 maximum die size of 2.8mm by 2mm In an alternative embodiment shown in Figure 52B„ the same PCB layout can be used with footed equivalent package 16S9B comprising leadframe 1650B, feet 16S2B, an even larger isolated die pad 1657B, and tie bars 1654B,
Figure 52C compares the three packages revealing the conventional TSSOP-8L package's PCB area efficiency of 27% can be improved to 40% or 45% using the USMP made footed package, with corresponding increases in die size of 49% and 69% respectively. In applications such as lithium battery protection where this package has become an industry standard, a 49% increase in die area for the same PCB space allows the protective power MOSFETs either to reduce flie.tr on-resistance or power dissipation or to increase their current rating for the same dissipated power. The performance boost is especially beneficial in high-end smart phones with rapid charge capability. The USMP
fabricated footed package, also offers 'an option for either an isolated or exposed die pad providing added flexibility in thermal management
In Figure 53A. the ubiquitous SOPS package 1669, comprising duai tie bars 1664, gull wing leads 1662. and isolated die pad 1666. and fabricated from leadframe 1660, is converted into its footed equivalent package 1679 A while preserving the same PCB layout for soldering. As shown, the footed package 1679A, fabricated from leadframe 1670A, comprises feet 1672 A, a larger isolated die pad 1.676A, and additional tie bare 1674A for greater stability. The isolated die pad I676A. can be replaced with an exposed die pad as required, offering perfect co-planarity because the feet and the die pad are made from the same piece of copper. Similar co-planarity is not possible using conventional SOPS 1669 because mechanical lead bending is intrinsically imprecise. By designing the foot of the footed package 1679 A for the same solder length as the conventional gull wing package 1669, namely 0,6mm, but eliminating the wasted space devoted for lead bending and forming, the footed package's die pad 1676 A increases to support a maximum die size of 3.285mm by 4.102mm, a 96% increase in die area over the 2,213mm by 3.102mm maximum die area of the conventional SOPS package 1669. The maximum die size is calculated for an isolated die pad useful for ICs or discrete transistors, not limited only for packaging discrete power MOSFETs.
In an alternati ve embodiment shown in Figure 53B, footed package 1679B. fabricated from .leadframe 1670B. comprises feet 1672:6, a larger isolated or alternatively an exposed die pad Ί676Β, and additional tie bars 1674B for greater stability. The alternate footed package's die pad 1676B increases to support a maximum die size of 3.792mm by 4.102mm, a 127% increase in die area over conventional SOPS 1669 This doubling m die area can be used to accommodate larger ICs with added functionality., or to increase the maximum die size of one or more power MOSFETs to lower on- resistance, reduce heating, improve efficiency or expand the current handling capability of a product. A comparison of conventional and US MP footed SOPS package
performance is summarized in the table of Figure 53C.
The benefit of the U SM P footed pac kage technology becomes most pronounced In quad-leaded gull wing packages. As shown in Figure 54A, industry standard and commercially available LQFP package 1709A fabricated from leadframe 1700 A and
•'having a 7mm by 7mm body, comer tie bars 1704A, gull wing leads 1702A, and isolated die pad 1 706A is converted into its footed equivalent package 1719A while preserving the same PCS layout for soldering. As shown, footed package 1719A, fabricated from leadfrarae 1710A; comprises feet 1712A, a larger isolated die pad 1716A? and comer tie bars 1714A. The isolated die pad can be replaced with an exposed die pad as required.
By designing the foot for the same solder length as the conventional gull wing package, namely 0.6mm, eliminating the wasted space devoted for lead bending and forming, and optimizing the Ieadframe, the footed package's die pad 1716A increases to support a maximum die size of 6.35mm by 6.35mm, a die area 318% that of a
commercially available LQFP7x7 maximum die size of 3.56mm by 3.56mm. The larger die area means substantially higher functionality circuitry can now be integrated into wave-solderable packages. The beneficial tripling of area overstates the improvement achieved by the footed design because conventional Ieadframe 1700 A does not illustrate the maximum possible die size. Considering the maximum possible size die pad for a conventional 7x7 LQFP package 1709B shown in Figure 54 B fabricated from Ieadframe 1700B, corner tie bars 1704B, gull wing leads 1702B, and isolated die pad 1706B, the size of the die pad (theoretically) increases to accommodate a maximum die size of 4.850mm by 4.950mm, nearly double the die size area of commercially available LQFP 1709 A.
For the sake of completeness, in an alternative embodiment of the USMP fabricated footed package the maxinnim die size is also increased. Also shown in Figure 54B footed package 1719B fabricated from Ieadframe 1710B and comprising feet 1712B, corner tie bars 1714B, and larger isolated die pad 1716B is able to increase the maximum die size to 6.750mm by 6.750mm.
A comparison of the two conventional LQFP packages against their USMP footed package equivalents is summarized in the table of Figure 54C where hypothetical gull wing LQFP Ieadframe 1700B is used, as a reference, i.e. for a die area ratio defined as 1.00 and having a PCB area efficiency of 23%. In contrast, a -commercially available 7x 7 LQFP leadfrarae has a maximum die size 48% smaller than optimum and a paltry PCB area efficiency of only 18%. In contrast, footed replacements for the LQFP, QFF packages with leadirames 1719A and Ϊ7Ι 9Β are capable of maximum die sizes 65% and
85% larger than the maximum die size for the hypothetical reference LQFP leadframe 1708, and over 200% larger than the maximum die size for the commercially available 7x7 LQFP packages.
In many cases, when a wave-solderable leaded package is required to package a die originally developed for a QFN leadiess package, there is no area efficient and cost effective package alternative available. This point is illustrated in the following table, where a 2.65mm by 2.65ram semiconductor die designed for a 20-pin. QFN needs to be packaged in a wave-solderable package. Considering the .maximum die size and the number of pins required for a specific iC, only a few choices exist, many of which are too large or too expensive to meet the design targets of the system.
The potential options are summarized in the following table:
While the footed version of the QFN, i.e. the QFF-20, can he used to rep lace the conventional package al low cost and in essentially the same PCB area, the TSSOP takes triple the area and the SOP requires six times the area. The LQFP55 has acceptable area efficiency except it cannot package a 2.65mm by 2.65mm die, so it is eliminated as an option. The LQFP66 is only double the PCB area, but it does not exist in production and it is unlikely any packaging company will pay the high cost to bring up an obsolete package with a limited market. The result is the commercially only available LQFP that fits the di e is the 7mm by 7mm package, triple the size of what is needed . Any package more than double the size will have too high, a cost to -support, the application.
As a result, the footed package -uniquely solves a problem for which, there are no real solutions available today, offering comparable performance to Jeadless packages in a cost effective manner, yet compatible with low cost wave-solder based PCB assembly.
Claims
1. A method of fabricating a semiconductor package by using a leadiratne, the leadfratue comprising a plurality of die pads, a first semiconductor die being mounted on a first die pad, a second semiconductor die being mounted on a second die pad, the method comprising;
forming a plastic block, the plastic block covering said first and second semiconductor dice; and
directing a first laser beam against the plastic block so as to remove a portion of said plastic block and thereby form a first plastic capsule and a second plastic capsule, said first plastic capsule covering said first semiconductor die, said second plastic capsule covering said second semiconductor die.
2. The method of Claim 1 wherein said directing a first laser beam against the plastic block and comprises moving said first laser beam through a series of parallel adjacent scans, each of said scans removing a slice of said plastic block,
3. The method of Claim 2 wherein said leadframe further comprises a metal conductor, said metal conductor extending between said first and second plastic capsules.
4. The method of Claim 3 wherein said first laser beam is of a first wavelength such that said first laser beam is absorbed less by said metal conductor than by said plastic block.
5. The method of Claim 4 farmer comprising directing a second laser beam against said metal conductor so as to remove a portion of said metal conductor and thereby form a first lead and a second lead separated by a street, said first lead extending under said first plastic capsule, said second lead extending under said second plastic capsule.
6. The method of Claim 5 wherein said directing a second laser beam against said metal conductor and comprises moving said second laser beam through a series of parallel adjacent scans,
7. Th e method of Claim 5 w herein said second laser beam is of a second wavelength such that said second laser beam is more readily absorbed by said metal conductor than said first laser beam.
8. The method of Claim 5 wherein said first lead comprises a foot segment, a column segment and a cantilever segment.
9. The method of Claim 8 wherein said directing a first laser beam against the plastic block is performed such that a side edge of first plastic capsule is positioned above one of said column segment and said cantilever segment of said first l ead, thereby leaving a sidewall of said column segment of said first lead exposed.
10. The method of Claim S wherein said directing a first laser beam against the plastic block is performed such that a side edge of said first plastic capsule is positioned above said foot, segment of said first lead, thereby leaving both sklewa!is of said column covered by said first plastic capsule.
1 1. The method of Claim 8 wherein said directing a second l aser beam against said metal conductor is performed such that a side of said street is aligned vertically with a side edge of said first plastic capsule so as to form a Ieadless semiconductor package.
12. The method of Claim 5 wherein said directing a second laser beam against said metal conductor is performed such that a side of said street is aligned vertically with a side edge of said first plastic capsule so as to form a Ieadless semiconductor package.
13. The method of Claim 5 wherein, following said directing a second laser beam against said metal conductor, a tie bar remains extending from said first plastic capsule, said method further comprising directing a third laser beam against said tie bar so as to cut off said tie bar flush with -a sidewall of said first plastic capsule.
14. The method of Claim 13 wherein said directing a third laser beam against said tie bar comprises moving said third laser beam through a series of parallel adjacent scans.
15. The method of Claim 1 further comprising forming the leadframe from a metal sheet, said method of forming a leadframe comprising partially etching a backside of said metal sheet in a first location so as to form a cantilever segment of a lead,
16. The method of Claim 15 wherein said method of forming a leadframe comprises partially etching a front side of said metal sheet in a second location horizontally spaced apart from said first location so as to form a foot segment of said lead, said first and second locations being separated by a third location wherein, said metal sheet is not etched so as to form a column segment of said lead.
17 , The method of Claim 16 wherein said method of formina a ieadframe comprises completely etching said metal sheet in a fourth location so as to separate said lead from a die pad.
18. The method of Claim 17 wherein said method of forming a ieadframe comprises etching said die pad from said backside of said metal sheet so are to form an isolated die pad.
19. The method of Claim .15 wherein said method of forming a ieadframe comprises completely etching said metal sheet in a fourth location so as to separate said lead from a die pad.
20. The method of Claim I further comprising printing a layer of solder on a backside of said first die pad.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201680040633.2A CN109478544B (en) | 2015-07-10 | 2016-07-06 | Universal surface mount semiconductor package |
MYPI2021001095A MY186501A (en) | 2015-07-10 | 2016-07-06 | Universal surface-mount semiconductor package |
MYPI2018700123A MY183619A (en) | 2015-07-10 | 2016-07-06 | Universal surface-mount semiconductor package |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/797,056 | 2015-07-10 | ||
US14/797,056 US9576932B2 (en) | 2013-03-09 | 2015-07-10 | Universal surface-mount semiconductor package |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017011246A1 true WO2017011246A1 (en) | 2017-01-19 |
Family
ID=57757928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2016/041169 WO2017011246A1 (en) | 2015-07-10 | 2016-07-06 | Universal surface-mount semiconductor package |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN109478544B (en) |
MY (2) | MY186501A (en) |
TW (1) | TWI640071B (en) |
WO (1) | WO2017011246A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113451148A (en) * | 2020-03-27 | 2021-09-28 | 美商矽成积体电路股份有限公司 | Forming method of packaging structure |
CN114839401A (en) * | 2022-03-12 | 2022-08-02 | 江苏宝浦莱半导体有限公司 | High-density arrangement aging board of service life test experiment golden finger plug structure with acceleration |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI810380B (en) * | 2019-02-22 | 2023-08-01 | 南韓商愛思開海力士有限公司 | System-in-packages including a bridge die |
TWI690039B (en) * | 2019-07-03 | 2020-04-01 | 矽品精密工業股份有限公司 | Electronic package and manufacturing method thereof |
CN111432554B (en) * | 2020-03-13 | 2021-08-10 | 清华大学 | Micro-system architecture |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080017907A1 (en) * | 2006-07-24 | 2008-01-24 | Infineon Technologies Ag | Semiconductor Module with a Power Semiconductor Chip and a Passive Component and Method for Producing the Same |
US20090298232A1 (en) * | 2005-10-28 | 2009-12-03 | Burghout William F | Method of forming a leaded molded array package |
CN101719759A (en) * | 2009-12-04 | 2010-06-02 | 武汉盛华微系统技术股份有限公司 | Method for adhering components and parts to packaging surface |
US20100187663A1 (en) * | 2009-01-29 | 2010-07-29 | Phillip Celaya | Method for manufacturing a semiconductor component and structure therefor |
US20110115069A1 (en) * | 2009-11-13 | 2011-05-19 | Serene Seoh Hian Teh | Electronic device including a packaging substrate and an electrical conductor within a via and a process of forming the same |
US20110129961A1 (en) * | 2009-11-30 | 2011-06-02 | Alpha And Omega Semiconductor Incorporated | Process to form semiconductor packages with external leads |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6909178B2 (en) * | 2000-09-06 | 2005-06-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
US9831393B2 (en) * | 2010-07-30 | 2017-11-28 | Cree Hong Kong Limited | Water resistant surface mount device package |
KR101698932B1 (en) * | 2010-08-17 | 2017-01-23 | 삼성전자 주식회사 | Semiconductor Package And Method For Manufacturing The Same |
US8513787B2 (en) * | 2011-08-16 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Multi-die semiconductor package with one or more embedded die pads |
JP6095997B2 (en) * | 2013-02-13 | 2017-03-15 | エスアイアイ・セミコンダクタ株式会社 | Manufacturing method of resin-encapsulated semiconductor device |
-
2016
- 2016-07-06 MY MYPI2021001095A patent/MY186501A/en unknown
- 2016-07-06 CN CN201680040633.2A patent/CN109478544B/en active Active
- 2016-07-06 WO PCT/US2016/041169 patent/WO2017011246A1/en active Application Filing
- 2016-07-06 MY MYPI2018700123A patent/MY183619A/en unknown
- 2016-07-11 TW TW105121821A patent/TWI640071B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090298232A1 (en) * | 2005-10-28 | 2009-12-03 | Burghout William F | Method of forming a leaded molded array package |
US20080017907A1 (en) * | 2006-07-24 | 2008-01-24 | Infineon Technologies Ag | Semiconductor Module with a Power Semiconductor Chip and a Passive Component and Method for Producing the Same |
US20100187663A1 (en) * | 2009-01-29 | 2010-07-29 | Phillip Celaya | Method for manufacturing a semiconductor component and structure therefor |
US20110115069A1 (en) * | 2009-11-13 | 2011-05-19 | Serene Seoh Hian Teh | Electronic device including a packaging substrate and an electrical conductor within a via and a process of forming the same |
US20110129961A1 (en) * | 2009-11-30 | 2011-06-02 | Alpha And Omega Semiconductor Incorporated | Process to form semiconductor packages with external leads |
CN101719759A (en) * | 2009-12-04 | 2010-06-02 | 武汉盛华微系统技术股份有限公司 | Method for adhering components and parts to packaging surface |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113451148A (en) * | 2020-03-27 | 2021-09-28 | 美商矽成积体电路股份有限公司 | Forming method of packaging structure |
CN114839401A (en) * | 2022-03-12 | 2022-08-02 | 江苏宝浦莱半导体有限公司 | High-density arrangement aging board of service life test experiment golden finger plug structure with acceleration |
Also Published As
Publication number | Publication date |
---|---|
CN109478544A (en) | 2019-03-15 |
TWI640071B (en) | 2018-11-01 |
CN109478544B (en) | 2023-05-26 |
MY186501A (en) | 2021-07-22 |
TW201712826A (en) | 2017-04-01 |
MY183619A (en) | 2021-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10615146B2 (en) | Universal surface-mount semiconductor package | |
US10312111B2 (en) | Method of fabricating low-profile footed power package | |
US11469205B2 (en) | Universal surface-mount semiconductor package | |
KR101803183B1 (en) | Semiconductor device and method for producing the same | |
WO2017011246A1 (en) | Universal surface-mount semiconductor package | |
US7238549B2 (en) | Surface-mounting semiconductor device and method of making the same | |
US10504822B2 (en) | Semiconductor device | |
US7410834B2 (en) | Method of manufacturing a semiconductor device | |
CN110246768B (en) | Stacked semiconductor package | |
US9029995B2 (en) | Semiconductor device and method of manufacturing the same | |
KR20080073735A (en) | Device and method for assembling a top and bottom exposed packaged semiconductor | |
TWI601253B (en) | Low-profile footed power package | |
JP2017516321A (en) | Gang clip with dispensing function tie bar | |
JPH11191561A (en) | Manufacture of semiconductor device | |
JPH11163007A (en) | Manufacture of semiconductor device | |
JP4330980B2 (en) | Lead frame manufacturing method and semiconductor device manufacturing method using the same, lead frame and semiconductor device using the same | |
JP2000150761A (en) | Resin sealed semiconductor device and its manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16824908 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16824908 Country of ref document: EP Kind code of ref document: A1 |