WO2017008428A1 - Chip temperature detection and control method and apparatus, and storage medium - Google Patents

Chip temperature detection and control method and apparatus, and storage medium Download PDF

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Publication number
WO2017008428A1
WO2017008428A1 PCT/CN2015/096182 CN2015096182W WO2017008428A1 WO 2017008428 A1 WO2017008428 A1 WO 2017008428A1 CN 2015096182 W CN2015096182 W CN 2015096182W WO 2017008428 A1 WO2017008428 A1 WO 2017008428A1
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Prior art keywords
temperature
chip
information
voltage information
quantized
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PCT/CN2015/096182
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French (fr)
Chinese (zh)
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安英杰
王魏
卢海涛
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深圳市中兴微电子技术有限公司
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Publication of WO2017008428A1 publication Critical patent/WO2017008428A1/en

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature

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  • the present invention relates to the field of chip design technology, and in particular, to a chip temperature detecting and controlling method, device and storage medium.
  • the chip As the chip's integration and processing power increase, the chip generates more heat during operation, resulting in an increase in board-level heat dissipation and an increase in system board temperature.
  • there is no effective temperature detection method that can effectively detect the temperature of the chip and the board level, so that the temperature information of the system board level, the chip, and the internal temperature of the chip is missing, resulting in the product caused by the excessive temperature of the chip. Problems such as degraded performance, reduced product reliability, and poor user experience may even lead to ineffective communication between chips and burnout of chips and system components.
  • embodiments of the present invention are directed to providing a chip temperature detecting and controlling method, apparatus, and storage medium, which can obtain temperature information of each position during operation of the chip, and adaptively adjust according to the temperature of the chip, thereby avoiding an excessive temperature of the chip.
  • Embodiments of the present invention provide a chip temperature detection and control method, where the method includes:
  • the operating state of the chip is controlled based on the quantized and calibrated voltage information.
  • the detecting the temperature information of the chip, and converting the temperature information into the voltage information comprises: detecting a temperature of at least one position on the chip, and converting the detected temperature information of the at least one position into corresponding voltage information;
  • the method of quantizing and calibrating voltage information includes selecting at least one voltage information for quantization and calibration.
  • the converting the temperature information into the voltage information includes:
  • the temperature information is converted into voltage information according to the temperature characteristics of the triode I-V relationship.
  • the operating state of the control chip according to the quantized and calibrated voltage information includes: when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, generating an interrupt, and according to the The temperature value corresponding to the quantized and calibrated voltage information is controlled to control the operating state of the chip.
  • the operating state of the control chip includes, but is not limited to, performing temperature alarm according to the temperature value corresponding to the quantized and calibrated voltage information. Pause/turn on and adjust the chip processing function.
  • the embodiment of the invention further provides a chip temperature detecting and controlling device, the device comprising: a temperature detector, a quantization calibrator, and a main processor; wherein
  • the temperature detector is configured to detect temperature information of the chip, and convert the temperature information into voltage information
  • the quantization calibrator is configured to quantize and calibrate the voltage information
  • the main processor is configured to control an operating state of the chip according to the quantized and calibrated voltage information.
  • the temperature detector is configured to:
  • Detecting a temperature of at least one location on the chip converting temperature information of the detected at least one location into corresponding voltage information
  • the apparatus also includes a control switch configured to select at least one voltage information to be delivered to the quantization calibrator.
  • the temperature detector is configured to:
  • the temperature information is converted into voltage information according to the temperature characteristics of the triode I-V relationship.
  • the device further includes a controller configured to generate an interrupt when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, and notify the main processor;
  • the main processor is configured to: control an operating state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information.
  • the main processor is configured to: perform temperature alarm, pause/open, and adjust chip partial processing functions according to the temperature values corresponding to the quantized and calibrated voltage information.
  • the embodiment of the invention further provides a computer storage medium storing a computer program for performing the chip temperature detection and control method of the embodiment of the invention.
  • the chip temperature detecting and controlling method, device and storage medium provided by the embodiments of the present invention firstly detect temperature information of the chip, convert the temperature information into voltage information, and then quantize and calibrate the voltage information; The quantized and calibrated voltage information is used to control the operating state of the chip.
  • the temperature of the chip can be effectively obtained, and the temperature can be adaptively adjusted according to the temperature of the chip, which effectively solves the performance degradation of the product due to the excessive temperature of the chip, the reliability of the product is lowered, the user experience is deteriorated, and the chip is inter-chip. Problems with communication failure, chip and system component burnout.
  • FIG. 1 is a schematic flow chart of a method for detecting and controlling a chip temperature according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing the overall structure of a chip temperature detecting and controlling device according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a chip temperature detecting and controlling device according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a temperature detector and a quantized calibrator according to an embodiment of the present invention
  • FIG. 5 is a schematic flowchart of a digital signal calibration method according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a chip temperature detecting and controlling device according to Embodiment 2 of the present invention.
  • FIG. 7 is a schematic structural diagram of a temperature detecting component on a chip according to an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a plurality of chip temperature collecting devices according to an embodiment of the present invention.
  • the temperature information of the chip is first detected, the temperature information is converted into voltage information; the voltage information is quantized and calibrated; and then the chip is controlled according to the quantized and calibrated voltage information. Working status.
  • FIG. 1 is a schematic flowchart of a method for detecting and controlling the temperature of a chip according to an embodiment of the present invention. As shown in FIG.
  • the chip temperature detection and control method described above includes the following steps:
  • Step 101 Detect temperature information of the chip, and convert the temperature information into voltage information
  • the temperature of at least one location on the chip is detected, and the detected temperature information of at least one location is converted into corresponding voltage information; and the temperature value is represented by the voltage information.
  • temperature information of multiple positions on the chip can be simultaneously detected, for example, temperature information of four positions on the chip is simultaneously detected, and temperature information of the detected four positions is respectively converted into corresponding information.
  • the converting the temperature information into the voltage information comprises: converting the temperature information into voltage information according to a temperature characteristic of the triode I-V relationship.
  • the temperature affects the current density of the triode.
  • the difference between the base-emitter voltage of the triode is different. Therefore, the difference between the base-emitter voltage of the triode and the temperature is approximately linear. Relationship, through this voltage difference, can determine the current chip Detect the temperature of the location.
  • the temperature detection by the two triodes and the process of converting the temperature information into voltage information the first triode and the second triode
  • the base-emitter voltage difference of the first transistor is recorded as a PTAT (Proportional To Absolute Temperature) voltage, wherein PTAT is a voltage proportional to the absolute temperature
  • the base-emitter voltage difference of the second triode is recorded as a CTAT (Complementary To Absolute Temperature) voltage, wherein the CTAT voltage is a voltage inversely proportional to the absolute temperature; the PTAT voltage and the CTAT voltage are subtracted to obtain It is the voltage information related to the temperature of the detection zone.
  • the embodiment of the present invention is merely an example of the above process, and is not limited thereto.
  • Step 102 Quantify and calibrate the voltage information.
  • the method for quantifying and calibrating the voltage information in the step includes: selecting at least one of the voltage information for quantization and calibration; In the polling mode, the voltage information corresponding to the temperature information of the multiple locations may be quantized or calibrated separately, or the voltage information corresponding to the temperature information of one of the locations may be selected for quantitative calibration according to the user configuration, or According to the field experience, the voltage information corresponding to the temperature information of the sensitive location is selected for quantization or calibration, and multiple voltage information can also be processed. In general, the highest, lowest, and average temperatures of multiple locations are available. The embodiments of the present invention do not limit the manner of selection.
  • the voltage information is first subjected to analog-to-digital conversion and quantized into a digital signal. Since the quantized digital signal maintains an approximate linear relationship with temperature, accuracy and accuracy are relatively low, and therefore, it is necessary to The digital signal is calibrated; in one embodiment, the bit stream generated by quantizing the voltage signal is counted by a digital technician of N+M bit width, and then the bit stream is divided into a plurality of N+M bit wide digital signals. Dividing the N+M bit wide digital signal by 2 ⁇ M A digital signal with a bit width of N bit is obtained.
  • the data in the linear relationship table between the N bit signal and the preset temperature and the output signal is calculated to generate a compensation difference, and when the calibration function enable control signal is valid, When the calibration function is turned on, the compensation difference is added to the output N bit signal and then output. In this way, the process of quantifying and calibrating the voltage signal is completed.
  • Step 103 Control the working state of the chip according to the quantized and calibrated voltage information.
  • the operating state of the control chip according to the quantized and calibrated voltage information includes: when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, generating an interrupt, and according to the quantizing sum The temperature value corresponding to the calibrated voltage information controls the working state of the chip.
  • the working state of the control chip includes but is not limited to: performing temperature alarm, suspending/opening, and adjusting chip processing functions.
  • a plurality of temperature thresholds may be preset to define a plurality of temperature intervals; for example, seven temperature thresholds are set, wherein the first threshold is an over-temperature protection threshold, and the second threshold to the sixth threshold
  • the temperature value gradually decreases; for example, the first threshold is 140 ° C, the second threshold is 130 ° C, the third threshold is 120 ° C, the fourth threshold is 100 ° C, the fifth threshold is 80 ° C, and the sixth threshold is 60 ° C,
  • the threshold value is 40 ° C; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the first threshold value of 140 ° C, an interrupt is generated, the current chip temperature is judged to be too high, and the working state of the chip is adjusted, such as generating a temperature alarm, Suspending part or all of the process, adjusting the processing speed of the chip, etc.; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the third threshold by 120 ° C, lower than the second threshold
  • the temperature threshold interval and the corresponding chip working state can be set according to the actual application environment.
  • the embodiment of the present invention is only an example of the above example, and is not limited to the scope.
  • the processes in steps 101-103 may be performed in a single execution according to an instruction, or may be performed periodically. Temperature information can be detected simultaneously on multiple areas of a chip. Temperature information detection is performed on a plurality of regions of a plurality of chips at the same time, and temperature detection results of the plurality of chips are collectively processed.
  • FIG. 2 is a schematic diagram showing the overall structure of a chip temperature detecting and controlling device according to an embodiment of the present invention. As shown in FIG. 2, the device includes: a temperature detector 21, and a quantization device. Calibrator 22, main processor 23; wherein
  • the temperature detector 21 is configured to detect temperature information of the chip, and convert the temperature information into voltage information
  • the temperature detector 21 is configured to: detect a temperature of at least one location on the chip, and convert the detected temperature information of the at least one location into corresponding voltage information;
  • the temperature detector 21 includes at least one temperature detecting component 211 for detecting a temperature of at least one position on the chip, which will be detected.
  • the temperature information of the at least one location is converted into corresponding voltage information; the temperature value is characterized by the voltage information.
  • the temperature information of multiple locations on the chip can be simultaneously detected.
  • four temperature detecting components 211 are provided: TM1, TM2, TM3, and TM4, and four positions on the chip are simultaneously detected. Temperature information, respectively converting the detected temperature information of the four positions into corresponding voltage information;
  • the temperature detector 21 is configured to convert the temperature information into voltage information according to a temperature characteristic of a triode I-V relationship.
  • the temperature affects the current density of the triode.
  • the difference between the base-emitter voltage of the triode is different. Therefore, the difference between the base-emitter voltage of the triode and the temperature is approximately linear.
  • the relationship, through this voltage difference, can determine the temperature of the current chip detection position.
  • 4 is a schematic structural diagram of a temperature detecting component 211 and a quantization calibrator 22 according to an embodiment of the present invention. As shown in FIG. 4, in the embodiment of the present invention, in order to improve the detection precision, the influence of the characteristics of the triode itself on the detection result is avoided, and the two triodes are passed.
  • the first transistor 2111 and the second transistor 2112 are The temperature detection zone of the chip, at which time the base-emitter voltage difference of the first transistor 2111 is recorded as the PTAT voltage, wherein PTAT is a voltage proportional to the absolute temperature; the second transistor 2112 base-emitter The voltage difference is recorded as the CTAT voltage, wherein the CTAT voltage is a voltage inversely proportional to the absolute temperature; the PTAT voltage and the CTAT voltage are subtracted to obtain voltage information related to the temperature of the detection zone.
  • the embodiment of the present invention is merely an example of the above process, and is not limited thereto.
  • the quantization calibrator 22 is configured to quantize and calibrate the voltage information
  • the apparatus when the temperature detector 21 detects temperatures at a plurality of locations on the chip, the apparatus further includes a control switch 24 configured to select to deliver at least one voltage information to the quantized calibrator.
  • the voltage information corresponding to the temperature information of multiple locations may be quantized or calibrated by means of polling, or the voltage information corresponding to the temperature information of one of the locations may be selected for quantitative calibration according to the user configuration.
  • the voltage information corresponding to the temperature information of the more sensitive position may be selected for quantification or calibration, and multiple voltage information may also be processed. In general, the highest, lowest, and average temperatures of multiple locations are available. The embodiments of the present invention do not limit the manner of selection.
  • the quantization calibrator 22 includes a quantization component 221 and a calibration component 222, wherein the quantization component 221 is configured to analog-digital convert the voltage information into a digital signal due to the quantized number.
  • the signal and the temperature are maintained in an approximate linear relationship, and the accuracy and accuracy are relatively low. Therefore, the calibration component 222 is required to calibrate the digital signal.
  • FIG. 5 is a schematic flowchart of a digital signal calibration method according to an embodiment of the present invention. As shown in FIG. 5, the calibration component 222 quantizes the voltage signal and generates a bit stream Bit stream through a digital counter of N+M bit width to perform a Digital Counter (2 ⁇ (N+M)) counting, and then the bit stream is obtained.
  • the main processor 23 is configured to control an operating state of the chip according to the quantized and calibrated voltage information
  • the device further includes a controller 25 configured to generate an interrupt when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, and notify the main processor 23;
  • the main processor 23 is configured to: control an operating state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information; in an embodiment, the main processor 23 is configured according to the quantized and calibrated Temperature value corresponding to the voltage information, temperature alarm, pause/open, and adjustment of the chip processing function;
  • the controller 25 is further configured to control the working process of the temperature detector 21, the quantization calibrator 22, and the control switch 24.
  • the controller 25 is configured to control the temperature detector 21, the quantizer calibrator 22, and the control switch 24 to perform temperature information detection as required, and then convert the detected temperature information into an abb bus format, and simultaneously The controller 25 generates a specific interrupt, and transmits the terminal information and temperature information to the processor 23 for processing by the processor.
  • the controller 25 controls the temperature detector 21, the quantization calibrator 22, and the control switch 24 to perform a temperature detection process, which may be set to a single detection, or may be set to periodic detection; Temperature information detection is performed in multiple areas, and temperature information detection may be performed on multiple areas of multiple chips at the same time.
  • the completion interrupt notification processor is generated, and the highest, lowest, and average temperature information of the detection points are reported.
  • the processor 23 responds to the corresponding interrupt, the working state of the chip is adjusted according to the working scene of the system, so that the chip temperature is controlled within the set range.
  • the single detection is performed by the processor 21 to perform a temperature detection on at least one area.
  • the controller 25 controls the temperature detector 21, the quantization calibrator 22, and the control switch 24 to periodically perform temperature detection on the chip temperature position according to a preset period.
  • a plurality of temperature thresholds may be preset to define a plurality of temperature intervals; for example, seven temperature thresholds are set, wherein the first threshold is an over-temperature protection threshold, and the second threshold to the sixth threshold The temperature value gradually decreases; for example, the first threshold is 140 ° C, the second threshold is 130 ° C, the third threshold is 120 ° C, the fourth threshold is 100 ° C, the fifth threshold is 80 ° C, and the sixth threshold is 60 ° C, The seven threshold value is 40 ° C; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the first threshold value of 140 ° C, the controller 25 generates an interrupt to notify the main processor 23; the main processor 23 determines that the current chip temperature has passed.
  • the controller 25 generates an interrupt, notifies the main processor 23, and the main processor 23 adjusts the working state of the chip. Such as suspending part of the process, adjusting the chip processing speed, and so on.
  • the temperature threshold interval and the corresponding chip working state can be set according to the actual application environment. The embodiment of the present invention is only an example of the above example, and is not limited to the scope.
  • FIG. 6 is a schematic structural diagram of a chip temperature detecting and controlling apparatus according to Embodiment 2 of the present invention.
  • the chip temperature detecting and controlling apparatus structure according to Embodiment 2 of the present invention includes a temperature sensor 61, a controller 25, and a main processor 23.
  • the temperature detector 21, the quantizer calibrator 22, the control switch 24, and the like may be integrated in the temperature sensor 61, and the temperature sensor 61 is configured to The temperature information at multiple locations in the chip is converted to a digital signal and sent to the outside.
  • the controller 25 is configured to control the temperature sensor 61 to detect temperature information as required, and then convert the detected temperature information into an abb bus format, while generating a specific interrupt, and send it to the processor 23 for processing by the processor.
  • the controller 25 controls the temperature sensor 61 to perform a temperature detection process, which may be set to a single detection, or may be set to periodic detection; temperature information detection may be performed on multiple regions of one chip at the same time, or At the same time, temperature information detection is performed on multiple regions of the plurality of chips, and when the detection is completed, the completion interrupt notification processor is generated, and the highest, lowest, and average temperature information of the detection points are reported.
  • a temperature detection process may be set to a single detection, or may be set to periodic detection; temperature information detection may be performed on multiple regions of one chip at the same time, or At the same time, temperature information detection is performed on multiple regions of the plurality of chips, and when the detection is completed, the completion interrupt notification processor is generated, and the highest, lowest, and average temperature information of the detection points are reported.
  • the processor 21 initiates a command to perform temperature detection on at least one area, and the detection completes the transmission interruption to the processor, and reports the detected maximum value, minimum value, and average value of the periodic detection.
  • the controller 25 controls the mode in which the temperature sensor 61 periodically operates the chip temperature test point at a configured time point. The entire detection process does not stop and continues.
  • the interrupt is controlled to control the working state of the chip. For example, when the over-temperature protection interrupt is enabled, the over-temperature protection interrupt is generated when the probe point temperature exceeds the first threshold value of 140 ° C.
  • the low-temperature report interrupt enable is enabled, the probe point temperature is lower than the seventh threshold value of 40 ° C, and an interrupt report is generated. status.
  • FIG. 7 is a schematic diagram showing the layout structure of the temperature detecting component 211 on the chip when the chip temperature is detected according to an embodiment of the present invention. As shown in FIG. 7, four temperature detecting components 211 can be placed. The temperature information of the detected high energy consumption block is used as the basis for adjusting the working state of the whole chip to the vicinity of the layout block with high chip operating frequency and high heat dissipation.
  • temperature information detection can be performed on multiple regions of a plurality of chips at the same time, and temperature detection results of the plurality of chips are collectively processed.
  • 8 is a schematic structural diagram of a plurality of chip temperature collecting devices according to an embodiment of the present invention. As shown in FIG. 8, a temperature detecting component TM81 and a control switch SW82 are disposed inside the chip A and the chip C, and the chip B is used as a master integrated chip internal temperature detecting. The component TM81, the control switch SW82, the quantization calibrator CP93, the controller Ct184, and the main processor CPU 85.
  • the temperature information collected by the chip A and the chip C is sent to the inside of the chip B under the control of the controller Ct184, and the chip B sends the temperature information to the CPU according to the above processing manner for the CPU to perform the chip. Control of the way of working.
  • the temperature information of each chip can be effectively shared while detecting the temperature information of each chip, and the temperature of the chip board level can be detected at the same time to realize the internal and inter-chip, System board level temperature information acquisition and detection.
  • Various warnings, adaptive adjustments, and control decisions for the product can be made.
  • the above chip temperature detecting and controlling method is implemented in the form of a software function module and sold or used as a separate product, it may also be stored in a computer readable storage medium.
  • the technical solution of the embodiments of the present invention may be embodied in the form of a software product in essence or in the form of a software product stored in a storage medium, including a plurality of instructions.
  • a computer device (which may be a personal computer, server, or network device, etc.) is caused to perform all or part of the methods described in various embodiments of the present invention.
  • the foregoing storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read only memory (ROM), a magnetic disk, or an optical disk.
  • program codes such as a USB flash drive, a mobile hard disk, a read only memory (ROM), a magnetic disk, or an optical disk.
  • an embodiment of the present invention further provides a computer storage medium, where the computer storage medium stores a computer program, where the computer program is used to execute the foregoing chip of the embodiment of the present invention. Temperature detection and control methods.

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Abstract

A chip temperature detection and control method, a chip temperature detection and control apparatus, and a storage medium. The chip temperature detection and control method comprises: detecting temperature information about a chip, and converting the temperature information into voltage information (101); quantifying and calibrating the voltage information (102); and controlling a working state of the chip according to the quantified and calibrated voltage information (103).

Description

一种芯片温度检测和控制方法、装置及存储介质Chip temperature detecting and controlling method, device and storage medium 技术领域Technical field
本发明涉及芯片设计技术领域，尤其涉及一种芯片温度检测和控制方法、装置及存储介质。The present invention relates to the field of chip design technology, and in particular, to a chip temperature detecting and controlling method, device and storage medium.
背景技术Background technique
伴随着深纳米工艺和芯片集成度的提高，芯片市场上出现了各种高集成度的芯片，如集成多核处理器、高清视频、图形图像、高清显示、多媒体技术、2/3/4G通信能力、WIFI、GPS/GLONASS/Galileo、NFC技术的高集成度芯片等。随着芯片集成度的提高，芯片处理能力越来越强大，产品形态更加多样化，工作场景也更加复杂化。Along with the deep nano process and chip integration, various highly integrated chips appear in the chip market, such as integrated multi-core processor, high-definition video, graphic image, high-definition display, multimedia technology, 2/3/4G communication capability. , high-integration chips such as WIFI, GPS/GLONASS/Galileo, and NFC technology. As the integration of chips increases, the processing power of chips becomes more and more powerful, the product form is more diverse, and the work scene is more complicated.
随着芯片集成度和处理能力的增强，芯片工作时会产生更多的热量，导致板级散热量的增加和系统板级温度的升高。目前，犹豫尚无一种有效的温度检测方法能够有效的检测芯片以及板级的温度，以至于系统板级、芯片间、芯片内部温度信息的缺失，从而产生了芯片温度过高时导致的产品的性能下降、产品可靠性降低、用户体验变差等问题，甚至可能带来芯片间通信失效、芯片和系统部件烧坏的情况。As the chip's integration and processing power increase, the chip generates more heat during operation, resulting in an increase in board-level heat dissipation and an increase in system board temperature. At present, there is no effective temperature detection method that can effectively detect the temperature of the chip and the board level, so that the temperature information of the system board level, the chip, and the internal temperature of the chip is missing, resulting in the product caused by the excessive temperature of the chip. Problems such as degraded performance, reduced product reliability, and poor user experience may even lead to ineffective communication between chips and burnout of chips and system components.
发明内容Summary of the invention
有鉴于此，本发明实施例期望提供芯片温度检测和控制方法、装置及存储介质，可以获取芯片工作时各位置的温度信息，并根据芯片温度进行自适应调节，避免了芯片温度过高时导致的各种问题。In view of this, embodiments of the present invention are directed to providing a chip temperature detecting and controlling method, apparatus, and storage medium, which can obtain temperature information of each position during operation of the chip, and adaptively adjust according to the temperature of the chip, thereby avoiding an excessive temperature of the chip. Various problems.
为达到上述目的，本发明实施例的技术方案是这样实现的：To achieve the above objective, the technical solution of the embodiment of the present invention is implemented as follows:
本发明实施例提供了一种芯片温度检测和控制方法，所述方法包括： Embodiments of the present invention provide a chip temperature detection and control method, where the method includes:
检测芯片的温度信息，将所述温度信息转换成电压信息；Detecting temperature information of the chip, converting the temperature information into voltage information;
对所述电压信息进行量化和校准；Quantifying and calibrating the voltage information;
所根据所述量化和校准后的电压信息，控制芯片的工作状态。The operating state of the chip is controlled based on the quantized and calibrated voltage information.
上述方案中，所述检测芯片的温度信息，将所述温度信息转换成电压信息包括：检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；In the above solution, the detecting the temperature information of the chip, and converting the temperature information into the voltage information comprises: detecting a temperature of at least one position on the chip, and converting the detected temperature information of the at least one position into corresponding voltage information;
相应地，所述对电压信息进行量化和校准方法包括：选择至少一个电压信息进行量化和校准。Accordingly, the method of quantizing and calibrating voltage information includes selecting at least one voltage information for quantization and calibration.
上述方案中，所述将温度信息转换成电压信息包括：In the above solution, the converting the temperature information into the voltage information includes:
根据三极管I-V关系的温度特性，将所述温度信息转换成电压信息。The temperature information is converted into voltage information according to the temperature characteristics of the triode I-V relationship.
上述方案中，所述根据所述量化和校准后的电压信息，控制芯片的工作状态包括：当所述量化和校准后的电压信息对应的温度值满足预设条件时，产生中断，并根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态。In the above solution, the operating state of the control chip according to the quantized and calibrated voltage information includes: when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, generating an interrupt, and according to the The temperature value corresponding to the quantized and calibrated voltage information is controlled to control the operating state of the chip.
上述方案中，所述根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态包括但不限于：根据所述量化和校准后的电压信息对应的温度值，进行温度告警、暂停/开启、调整芯片部分处理功能。In the above solution, according to the temperature value corresponding to the quantized and calibrated voltage information, the operating state of the control chip includes, but is not limited to, performing temperature alarm according to the temperature value corresponding to the quantized and calibrated voltage information. Pause/turn on and adjust the chip processing function.
本发明实施例还提供了一种芯片温度检测和控制装置，所述装置包括：温度检测器、量化校准器、主处理器；其中，The embodiment of the invention further provides a chip temperature detecting and controlling device, the device comprising: a temperature detector, a quantization calibrator, and a main processor; wherein
所述温度检测器，配置为检测芯片的温度信息，将所述温度信息转换成电压信息；The temperature detector is configured to detect temperature information of the chip, and convert the temperature information into voltage information;
所述量化校准器，配置为对所述电压信息进行量化和校准；The quantization calibrator is configured to quantize and calibrate the voltage information;
所述主处理器，配置为所根据所述量化和校准后的电压信息，控制芯片的工作状态。The main processor is configured to control an operating state of the chip according to the quantized and calibrated voltage information.
上述方案中，所述温度检测器配置为： In the above solution, the temperature detector is configured to:
检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；Detecting a temperature of at least one location on the chip, converting temperature information of the detected at least one location into corresponding voltage information;
所述装置还包括控制开关，配置为选择至少一个电压信息输送到量化校准器。The apparatus also includes a control switch configured to select at least one voltage information to be delivered to the quantization calibrator.
上述方案中，所述温度检测器配置为：In the above solution, the temperature detector is configured to:
根据三极管I-V关系的温度特性，将所述温度信息转换成电压信息。The temperature information is converted into voltage information according to the temperature characteristics of the triode I-V relationship.
上述方案中，所述装置还包括控制器，配置为当所述量化和校准后的电压信息对应的温度值满足预设条件时，产生中断，并通知主处理器；In the above solution, the device further includes a controller configured to generate an interrupt when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, and notify the main processor;
所述主处理器配置为：根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态。The main processor is configured to: control an operating state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information.
上述方案中，所述主处理器，配置为：根据所述量化和校准后的电压信息对应的温度值，进行温度告警、暂停/开启、调整芯片部分处理功能。In the above solution, the main processor is configured to: perform temperature alarm, pause/open, and adjust chip partial processing functions according to the temperature values corresponding to the quantized and calibrated voltage information.
本发明实施例还提供了一种计算机存储介质，所述计算机存储介质存储有计算机程序，该计算机程序用于执行本发明实施例的芯片温度检测和控制方法。The embodiment of the invention further provides a computer storage medium storing a computer program for performing the chip temperature detection and control method of the embodiment of the invention.
本发明实施例所提供的芯片温度检测和控制方法、装置及存储介质，先检测芯片的温度信息，将所述温度信息转换成电压信息；再对所述电压信息进行量化和校准；然后根据所述量化和校准后的电压信息，控制芯片的工作状态。如此，可以有效的获取芯片的温度，根据芯片的温度进行自适应调节，有效的解决了由于芯片工作时温度过高产生的产品的性能下降、产品可靠性降低、用户体验变差、以及芯片间通信失效、芯片和系统部件烧坏等问题。The chip temperature detecting and controlling method, device and storage medium provided by the embodiments of the present invention firstly detect temperature information of the chip, convert the temperature information into voltage information, and then quantize and calibrate the voltage information; The quantized and calibrated voltage information is used to control the operating state of the chip. In this way, the temperature of the chip can be effectively obtained, and the temperature can be adaptively adjusted according to the temperature of the chip, which effectively solves the performance degradation of the product due to the excessive temperature of the chip, the reliability of the product is lowered, the user experience is deteriorated, and the chip is inter-chip. Problems with communication failure, chip and system component burnout.
附图说明DRAWINGS
图1为本发明实施例芯片温度检测和控制方法流程示意图；1 is a schematic flow chart of a method for detecting and controlling a chip temperature according to an embodiment of the present invention;
图2为本发明实施例芯片温度检测和控制装置整体结构示意图； 2 is a schematic view showing the overall structure of a chip temperature detecting and controlling device according to an embodiment of the present invention;
图3为本发明实施例芯片温度检测和控制装置详细结构示意图；3 is a schematic structural diagram of a chip temperature detecting and controlling device according to an embodiment of the present invention;
图4为本发明实施例温度检测器和量化校准器结构示意图；4 is a schematic structural diagram of a temperature detector and a quantized calibrator according to an embodiment of the present invention;
图5为本发明实施例数字信号校准方法流程示意图；FIG. 5 is a schematic flowchart of a digital signal calibration method according to an embodiment of the present invention; FIG.
图6为本发明实施例二芯片温度检测和控制装置结构示意图；6 is a schematic structural diagram of a chip temperature detecting and controlling device according to Embodiment 2 of the present invention;
图7为本发明实施例温度检测部件在芯片上的布局结构示意图；7 is a schematic structural diagram of a temperature detecting component on a chip according to an embodiment of the present invention;
图8为本发明实施例多个芯片温度采集装置结构示意图。FIG. 8 is a schematic structural diagram of a plurality of chip temperature collecting devices according to an embodiment of the present invention.
具体实施方式detailed description
在本发明实施例中，先检测芯片的温度信息，将所述温度信息转换成电压信息；再对所述电压信息进行量化和校准；然后所根据所述量化和校准后的电压信息，控制芯片的工作状态。In the embodiment of the present invention, the temperature information of the chip is first detected, the temperature information is converted into voltage information; the voltage information is quantized and calibrated; and then the chip is controlled according to the quantized and calibrated voltage information. Working status.
下面结合附图及实施例，对本发明实施例所述芯片温度检测和控制方法进行详细说明，图1为本发明实施例芯片温度检测和控制方法流程示意图，如图1所示，本发明实施例中所述芯片温度检测和控制方法包括以下步骤：The method for detecting and controlling the temperature of the chip according to the embodiment of the present invention is described in detail below with reference to the accompanying drawings and embodiments. FIG. 1 is a schematic flowchart of a method for detecting and controlling the temperature of a chip according to an embodiment of the present invention. As shown in FIG. The chip temperature detection and control method described above includes the following steps:
步骤101：检测芯片的温度信息，将所述温度信息转换成电压信息；Step 101: Detect temperature information of the chip, and convert the temperature information into voltage information;
本发明实施例中，检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；通过所述电压信息来表征温度值。例如，对于面积较大的芯片，可以对芯片上多个位置的温度信息同时进行检测，如同时检测芯片上4个位置的温度信息，分别将检测到的4个位置的温度信息转换成对应的电压信息；In the embodiment of the present invention, the temperature of at least one location on the chip is detected, and the detected temperature information of at least one location is converted into corresponding voltage information; and the temperature value is represented by the voltage information. For example, for a chip with a large area, temperature information of multiple positions on the chip can be simultaneously detected, for example, temperature information of four positions on the chip is simultaneously detected, and temperature information of the detected four positions is respectively converted into corresponding information. Voltage information
本步骤中，所述将温度信息转换成电压信息包括：根据三极管I-V关系的温度特性，将所述温度信息转换成电压信息。In this step, the converting the temperature information into the voltage information comprises: converting the temperature information into voltage information according to a temperature characteristic of the triode I-V relationship.
温度会影响三极管的电流密度，当通过三极管的电流密度不同时，三极管的基极-发射极电压之间的差值不同，因此，三极管的基极-发射极电压的差值与温度有近似线性的关系，通过这一电压差值，能够确定当前芯片 检测位置的温度。本发明实施例中，为了提高检测精度，避免三极管本身特性对检测结果的影响，通过两个三极管实现温度检测以及将温度信息转换成电压信息的过程：将第一三极管和第二三极管至于芯片的温度检测区，这时第一三极管的基极-发射极电压差值记为绝对温度正比(PTAT，Proportional To Absolute Temperature)电压，其中PTAT为与绝对温度成正比的电压；第二三极管基极-发射极电压差值记为绝对温度反比(CTAT，Complementary To Absolute Temperature)电压，其中CTAT电压为与绝对温度成反比的电压；将PTAT电压和CTAT电压相减，得到的即为与检测区温度相关的电压信息。The temperature affects the current density of the triode. When the current density through the triode is different, the difference between the base-emitter voltage of the triode is different. Therefore, the difference between the base-emitter voltage of the triode and the temperature is approximately linear. Relationship, through this voltage difference, can determine the current chip Detect the temperature of the location. In the embodiment of the present invention, in order to improve the detection precision and avoid the influence of the characteristics of the triode on the detection result, the temperature detection by the two triodes and the process of converting the temperature information into voltage information: the first triode and the second triode As for the temperature detection area of the chip, the base-emitter voltage difference of the first transistor is recorded as a PTAT (Proportional To Absolute Temperature) voltage, wherein PTAT is a voltage proportional to the absolute temperature; The base-emitter voltage difference of the second triode is recorded as a CTAT (Complementary To Absolute Temperature) voltage, wherein the CTAT voltage is a voltage inversely proportional to the absolute temperature; the PTAT voltage and the CTAT voltage are subtracted to obtain It is the voltage information related to the temperature of the detection zone.
本发明实施例仅仅是以上述过程为例，并不限定于此。The embodiment of the present invention is merely an example of the above process, and is not limited thereto.
步骤102：对所述电压信息进行量化和校准；Step 102: Quantify and calibrate the voltage information.
本发明实施例中，当步骤101中检测芯片上多个位置的温度时，本步骤中，所述对电压信息进行量化和校准方法包括：选择其中至少一个电压信息进行量化和校准；在实现过程中，可以采用轮询的方式，分别对多个位置的温度信息对应的电压信息进行量化或校准，也可以根据用户配置，选择其中的一个位置的温度信息对应的电压信息进行量化校准，也可以根据现场经验，选择较敏感的位置的温度信息对应的电压信息进行量化或校准，也可以对多个电压信息进行处理。通常情况下，多个位置的温度的最高值，最低值，平均值都可以得到。本发明实施例并不对选取方式进行限定。In the embodiment of the present invention, when detecting the temperature of the plurality of locations on the chip in step 101, the method for quantifying and calibrating the voltage information in the step includes: selecting at least one of the voltage information for quantization and calibration; In the polling mode, the voltage information corresponding to the temperature information of the multiple locations may be quantized or calibrated separately, or the voltage information corresponding to the temperature information of one of the locations may be selected for quantitative calibration according to the user configuration, or According to the field experience, the voltage information corresponding to the temperature information of the sensitive location is selected for quantization or calibration, and multiple voltage information can also be processed. In general, the highest, lowest, and average temperatures of multiple locations are available. The embodiments of the present invention do not limit the manner of selection.
本步骤中，首先将所述电压信息进行模数转换，量化成数字信号，由于量化后的数字信号与温度是保持一种近似的线性关系的，精度和准确度比较低，因此，需要对所述数字信号进行校准；在一实施例中，将电压信号进行量化后产生的比特流经过N+M位宽的数字技术器计数后，将比特流划分成多个N+M位宽的数字信号，将所述N+M位宽的数字信号除以2^M 得到位宽为N bit的数字信号。根据预设的温度和输出信号的线性关系表格，将N bit信号与预设的温度和输出信号的线性关系表格中的数据进行运算产生补偿差值，当校准功能使能控制信号有效的情况下，即开启校准功能的情况下，将所述补偿差值补充到输出N bit信号后再输出。如此，完成对所述电压信号量化和校准的过程。In this step, the voltage information is first subjected to analog-to-digital conversion and quantized into a digital signal. Since the quantized digital signal maintains an approximate linear relationship with temperature, accuracy and accuracy are relatively low, and therefore, it is necessary to The digital signal is calibrated; in one embodiment, the bit stream generated by quantizing the voltage signal is counted by a digital technician of N+M bit width, and then the bit stream is divided into a plurality of N+M bit wide digital signals. Dividing the N+M bit wide digital signal by 2^M A digital signal with a bit width of N bit is obtained. According to the preset temperature and output signal linear relationship table, the data in the linear relationship table between the N bit signal and the preset temperature and the output signal is calculated to generate a compensation difference, and when the calibration function enable control signal is valid, When the calibration function is turned on, the compensation difference is added to the output N bit signal and then output. In this way, the process of quantifying and calibrating the voltage signal is completed.
步骤103：所根据所述量化和校准后的电压信息，控制芯片的工作状态。Step 103: Control the working state of the chip according to the quantized and calibrated voltage information.
所述所根据所述量化和校准后的电压信息，控制芯片的工作状态包括：当所述量化和校准后的电压信息对应的温度值满足预设条件时，产生中断，并根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态。The operating state of the control chip according to the quantized and calibrated voltage information includes: when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, generating an interrupt, and according to the quantizing sum The temperature value corresponding to the calibrated voltage information controls the working state of the chip.
其中，所述控制芯片的工作状态包括但不限于：进行温度告警、暂停/开启、调整芯片部分处理功能。The working state of the control chip includes but is not limited to: performing temperature alarm, suspending/opening, and adjusting chip processing functions.
本发明实施例中，可以预设多个温度阈值，以划定多个温度区间；例如，设定7个温度阈值，其中，第一阈值为过温保护门限，第二阈值至第六阈值的温度值逐渐降低；如，第一阈值为140℃，第二阈值为130℃，第三阈值为120℃，第四阈值为100℃，第五阈值为80℃，第六阈值为60℃，第七阈值为40℃；当所述量化和校准后的电压信息对应的温度值高于第一阈值140℃时，产生中断，判断当前芯片温度过高，调整芯片的工作状态，如产生温度告警、暂停部分或全部进程、调整芯片处理速度等；当所述量化和校准后的电压信息对应的温度值高于第三阈值120℃，低于第二阈值130℃时，虽然目前芯片温度没有超过过温保护门限，但是温度依然很高，此时，产生中断，调整调整芯片的工作状态，如暂停部分进程、调整芯片处理速度等。各温度阈值区间及其对应的芯片工作状态可以根据实际应用环境进行设置，本发明实施例仅仅是以上述举例为例，并不限定此范围。In the embodiment of the present invention, a plurality of temperature thresholds may be preset to define a plurality of temperature intervals; for example, seven temperature thresholds are set, wherein the first threshold is an over-temperature protection threshold, and the second threshold to the sixth threshold The temperature value gradually decreases; for example, the first threshold is 140 ° C, the second threshold is 130 ° C, the third threshold is 120 ° C, the fourth threshold is 100 ° C, the fifth threshold is 80 ° C, and the sixth threshold is 60 ° C, The threshold value is 40 ° C; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the first threshold value of 140 ° C, an interrupt is generated, the current chip temperature is judged to be too high, and the working state of the chip is adjusted, such as generating a temperature alarm, Suspending part or all of the process, adjusting the processing speed of the chip, etc.; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the third threshold by 120 ° C, lower than the second threshold of 130 ° C, although the current chip temperature has not exceeded Temperature protection threshold, but the temperature is still very high. At this time, an interrupt is generated, and the working state of the chip is adjusted and adjusted, such as suspending part of the process and adjusting the processing speed of the chip. The temperature threshold interval and the corresponding chip working state can be set according to the actual application environment. The embodiment of the present invention is only an example of the above example, and is not limited to the scope.
本发明实施例中，步骤101-103所述过程可以根据指令单次执行，也可以周期性执行。可以同时对一个芯片的多个区域进行温度信息检测，也可 以同时对多个芯片的多个区域进行温度信息检测，将多个芯片的温度检测结果集中进行处理。In the embodiment of the present invention, the processes in steps 101-103 may be performed in a single execution according to an instruction, or may be performed periodically. Temperature information can be detected simultaneously on multiple areas of a chip. Temperature information detection is performed on a plurality of regions of a plurality of chips at the same time, and temperature detection results of the plurality of chips are collectively processed.
本发明实施例还提供了一种芯片温度检测和控制装置，图2为本发明实施例芯片温度检测和控制装置整体结构示意图，如图2所示，所述装置包括：温度检测器21、量化校准器22、主处理器23；其中，The embodiment of the present invention further provides a chip temperature detecting and controlling device. FIG. 2 is a schematic diagram showing the overall structure of a chip temperature detecting and controlling device according to an embodiment of the present invention. As shown in FIG. 2, the device includes: a temperature detector 21, and a quantization device. Calibrator 22, main processor 23; wherein
所述温度检测器21，配置为检测芯片的温度信息，将所述温度信息转换成电压信息；The temperature detector 21 is configured to detect temperature information of the chip, and convert the temperature information into voltage information;
本发明实施例中，所述温度检测器21配置为：检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；In the embodiment of the present invention, the temperature detector 21 is configured to: detect a temperature of at least one location on the chip, and convert the detected temperature information of the at least one location into corresponding voltage information;
图3为本发明实施例芯片温度检测和控制装置详细结构示意图，如图3所示，所述温度检测器21包括至少一个温度检测部件211，检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；通过所述电压信息来表征温度值。对于面积较大的芯片，可以对芯片上多个位置的温度信息同时进行检测，如图3所示，设置4个温度检测部件211：TM1、TM2、TM3、TM4，同时检测芯片上4个位置的温度信息，分别将检测到的4个位置的温度信息转换成对应的电压信息；3 is a schematic structural diagram of a chip temperature detecting and controlling device according to an embodiment of the present invention. As shown in FIG. 3, the temperature detector 21 includes at least one temperature detecting component 211 for detecting a temperature of at least one position on the chip, which will be detected. The temperature information of the at least one location is converted into corresponding voltage information; the temperature value is characterized by the voltage information. For a larger chip, the temperature information of multiple locations on the chip can be simultaneously detected. As shown in FIG. 3, four temperature detecting components 211 are provided: TM1, TM2, TM3, and TM4, and four positions on the chip are simultaneously detected. Temperature information, respectively converting the detected temperature information of the four positions into corresponding voltage information;
本发明实施例中，所述温度检测器21配置为：根据三极管I-V关系的温度特性，将所述温度信息转换成电压信息。In the embodiment of the present invention, the temperature detector 21 is configured to convert the temperature information into voltage information according to a temperature characteristic of a triode I-V relationship.
温度会影响三极管的电流密度，当通过三极管的电流密度不同时，三极管的基极-发射极电压之间的差值不同，因此，三极管的基极-发射极电压的差值与温度有近似线性的关系，通过这一电压差值，能够确定当前芯片检测位置的温度。图4为本发明实施例温度检测部件211和量化校准器22结构示意图，如图4所示，本发明实施例中，为了提高检测精度，避免三极管本身特性对检测结果的影响，通过两个三极管实现温度检测以及将温度信息转换成电压信息的过程：将第一三极管2111和第二三极管2112至于 芯片的温度检测区，这时第一三极管2111的基极-发射极电压差值记为PTAT电压，其中PTAT为与绝对温度成正比的电压；第二三极管2112基极-发射极电压差值记为CTAT电压，其中CTAT电压为与绝对温度成反比的电压；将PTAT电压和CTAT电压相减，得到的即为与检测区温度相关的电压信息。The temperature affects the current density of the triode. When the current density through the triode is different, the difference between the base-emitter voltage of the triode is different. Therefore, the difference between the base-emitter voltage of the triode and the temperature is approximately linear. The relationship, through this voltage difference, can determine the temperature of the current chip detection position. 4 is a schematic structural diagram of a temperature detecting component 211 and a quantization calibrator 22 according to an embodiment of the present invention. As shown in FIG. 4, in the embodiment of the present invention, in order to improve the detection precision, the influence of the characteristics of the triode itself on the detection result is avoided, and the two triodes are passed. The process of achieving temperature detection and converting temperature information into voltage information: the first transistor 2111 and the second transistor 2112 are The temperature detection zone of the chip, at which time the base-emitter voltage difference of the first transistor 2111 is recorded as the PTAT voltage, wherein PTAT is a voltage proportional to the absolute temperature; the second transistor 2112 base-emitter The voltage difference is recorded as the CTAT voltage, wherein the CTAT voltage is a voltage inversely proportional to the absolute temperature; the PTAT voltage and the CTAT voltage are subtracted to obtain voltage information related to the temperature of the detection zone.
本发明实施例仅仅是以上述过程为例，并不限定于此。The embodiment of the present invention is merely an example of the above process, and is not limited thereto.
所述量化校准器22，配置为对所述电压信息进行量化和校准；The quantization calibrator 22 is configured to quantize and calibrate the voltage information;
本发明实施例中，当温度检测器21检测芯片上多个位置的温度时，所述装置还包括控制开关24，配置为选择将至少一个电压信息输送到量化校准器。在实现过程中，可以采用轮询的方式，分别对多个位置的温度信息对应的电压信息进行量化或校准，也可以根据用户配置，选择其中的一个位置的温度信息对应的电压信息进行量化校准，也可以根据现场经验，选择对较敏感的位置的温度信息对应的电压信息进行量化或校准，也可以对多个电压信息进行处理。通常情况下，多个位置的温度的最高值，最低值，平均值都可以得到。本发明实施例并不对选取方式进行限定。In an embodiment of the invention, when the temperature detector 21 detects temperatures at a plurality of locations on the chip, the apparatus further includes a control switch 24 configured to select to deliver at least one voltage information to the quantized calibrator. In the implementation process, the voltage information corresponding to the temperature information of multiple locations may be quantized or calibrated by means of polling, or the voltage information corresponding to the temperature information of one of the locations may be selected for quantitative calibration according to the user configuration. According to the field experience, the voltage information corresponding to the temperature information of the more sensitive position may be selected for quantification or calibration, and multiple voltage information may also be processed. In general, the highest, lowest, and average temperatures of multiple locations are available. The embodiments of the present invention do not limit the manner of selection.
如图4所示，所述量化校准器22包括量化部件221和校准部件222，其中，所述量化部件221配置为将所述电压信息进行模数转换，量化成数字信号，由于量化后的数字信号与温度是保持一种近似的线性关系的，精度和准确度比较低，因此，需要所述校准部件222对所述数字信号进行校准；图5为本发明实施例数字信号校准方法流程示意图，如图5所示，所述校准部件222将电压信号进行量化后产生的比特流Bit stream经过N+M位宽的数字计数器进行Digital Counter(2^(N+M))计数后，将比特流划分成多个N+M位宽的数字信号，将所述N+M位宽的数字信号除以2^M(divide by 2^M)得到位宽为N bit的数字信号均值average；根据预设的温度和输出信号的线性关系表格(Reference Table)，将N bit信号与预设的温度和输 出信号的线性关系表格中的数据进行运算产生补偿差值offset，当校准功能使能控制信号有效的情况下，即开启校准功能的情况下，将所述补偿差值补充到输出N bit信号后再输出。如此，完成对所述电压信号量化和校准的过程。As shown in FIG. 4, the quantization calibrator 22 includes a quantization component 221 and a calibration component 222, wherein the quantization component 221 is configured to analog-digital convert the voltage information into a digital signal due to the quantized number. The signal and the temperature are maintained in an approximate linear relationship, and the accuracy and accuracy are relatively low. Therefore, the calibration component 222 is required to calibrate the digital signal. FIG. 5 is a schematic flowchart of a digital signal calibration method according to an embodiment of the present invention. As shown in FIG. 5, the calibration component 222 quantizes the voltage signal and generates a bit stream Bit stream through a digital counter of N+M bit width to perform a Digital Counter (2^(N+M)) counting, and then the bit stream is obtained. Dividing into a plurality of N+M bit-wide digital signals, dividing the N+M-bit wide digital signal by 2^M (divide by 2^M) to obtain a digital signal average of the bit width N bits; Set the temperature and output signal linear relationship table (Reference Table), the N bit signal and the preset temperature and input The data in the linear relationship table of the signal is calculated to generate a compensation difference offset. When the calibration function enable control signal is valid, that is, when the calibration function is turned on, the compensation difference is added to the output N bit signal. Then output. In this way, the process of quantifying and calibrating the voltage signal is completed.
所述主处理器23，配置为所根据所述量化和校准后的电压信息，控制芯片的工作状态；The main processor 23 is configured to control an operating state of the chip according to the quantized and calibrated voltage information;
本发明实施例中，所述装置还包括控制器25，配置为当所述量化和校准后的电压信息对应的温度值满足预设条件时，产生中断，并通知主处理器23；In the embodiment of the present invention, the device further includes a controller 25 configured to generate an interrupt when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, and notify the main processor 23;
所述主处理器23配置为：根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态；在一实施例中，所述主处理器23根据所述量化和校准后的电压信息对应的温度值，进行温度告警、暂停/开启、调整芯片部分处理功能；The main processor 23 is configured to: control an operating state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information; in an embodiment, the main processor 23 is configured according to the quantized and calibrated Temperature value corresponding to the voltage information, temperature alarm, pause/open, and adjustment of the chip processing function;
本发明实施例中，所述控制器25还配置为控制温度检测器21、量化校准器22、控制开关24的工作过程。在一实施例中，所述控制器25，配置为控制温度检测器21、量化校准器22、控制开关24按照要求进行温度信息的检测，然后将检测到的温度信息转换成apb总线格式，同时控制器25产生特定的中断，将所述终端信息以及温度信息发送到处理器23供处理器进行处理。In the embodiment of the present invention, the controller 25 is further configured to control the working process of the temperature detector 21, the quantization calibrator 22, and the control switch 24. In an embodiment, the controller 25 is configured to control the temperature detector 21, the quantizer calibrator 22, and the control switch 24 to perform temperature information detection as required, and then convert the detected temperature information into an abb bus format, and simultaneously The controller 25 generates a specific interrupt, and transmits the terminal information and temperature information to the processor 23 for processing by the processor.
本发明实施例中，所述控制器25控制温度检测器21、量化校准器22、控制开关24进行温度检测过程可以设置成单次检测，也可以设置成周期性检测；可以同时对一个芯片的多个区域进行温度信息检测，也可以同时对多个芯片的多个区域进行温度信息检测，检测完成时产生完成中断通知处理器，上报探测点的最高、最低和平均温度信息。并将检测到的温度与各个阈值进行比较，当芯片温度高于过温保护门限时，产生过温保护的中断； 当芯片温度处于其他温度阈值区间时，产生对应的中断，处理器23响应对应中断后，根据系统的工作场景调整芯片的工作状态，让芯片温度控制在设定的范围内。In the embodiment of the present invention, the controller 25 controls the temperature detector 21, the quantization calibrator 22, and the control switch 24 to perform a temperature detection process, which may be set to a single detection, or may be set to periodic detection; Temperature information detection is performed in multiple areas, and temperature information detection may be performed on multiple areas of multiple chips at the same time. When the detection is completed, the completion interrupt notification processor is generated, and the highest, lowest, and average temperature information of the detection points are reported. And comparing the detected temperature with each threshold, when the chip temperature is higher than the over-temperature protection threshold, an over-temperature protection interruption occurs; When the chip temperature is in other temperature threshold intervals, a corresponding interrupt is generated. After the processor 23 responds to the corresponding interrupt, the working state of the chip is adjusted according to the working scene of the system, so that the chip temperature is controlled within the set range.
其中，所述单次检测，为处理器21发起一次命令对至少一个区域进行一次温度检测。周期性检测，是处理器21预设测量周期后，控制器25控制温度检测器21、量化校准器22、控制开关24周期性的根据预设周期，循环对芯片温度位置进行温度检测。The single detection is performed by the processor 21 to perform a temperature detection on at least one area. Periodically, after the processor 21 presets the measurement period, the controller 25 controls the temperature detector 21, the quantization calibrator 22, and the control switch 24 to periodically perform temperature detection on the chip temperature position according to a preset period.
本发明实施例中，可以预设多个温度阈值，以划定多个温度区间；例如，设定7个温度阈值，其中，第一阈值为过温保护门限，第二阈值至第六阈值的温度值逐渐降低；如，第一阈值为140℃，第二阈值为130℃，第三阈值为120℃，第四阈值为100℃，第五阈值为80℃，第六阈值为60℃，第七阈值为40℃；当所述量化和校准后的电压信息对应的温度值高于第一阈值140℃时，控制器25产生中断，通知主处理器23；主处理器23判断当前芯片温度过高，调整芯片的工作状态，如产生温度告警、暂停部分或全部进程、调整芯片处理速度等；当所述量化和校准后的电压信息对应的温度值高于第三阈值120℃，低于第二阈值130℃时，虽然目前芯片温度没有超过过温保护门限，但是温度依然很高，此时，控制器25产生中断，通知主处理器23，主处理器23调整调整芯片的工作状态，如暂停部分进程、调整芯片处理速度等。各温度阈值区间及其对应的芯片工作状态可以根据实际应用环境进行设置，本发明实施例仅仅是以上述举例为例，并不限定此范围。In the embodiment of the present invention, a plurality of temperature thresholds may be preset to define a plurality of temperature intervals; for example, seven temperature thresholds are set, wherein the first threshold is an over-temperature protection threshold, and the second threshold to the sixth threshold The temperature value gradually decreases; for example, the first threshold is 140 ° C, the second threshold is 130 ° C, the third threshold is 120 ° C, the fourth threshold is 100 ° C, the fifth threshold is 80 ° C, and the sixth threshold is 60 ° C, The seven threshold value is 40 ° C; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the first threshold value of 140 ° C, the controller 25 generates an interrupt to notify the main processor 23; the main processor 23 determines that the current chip temperature has passed. High, adjust the working state of the chip, such as generating a temperature alarm, suspending part or all of the process, adjusting the processing speed of the chip, etc.; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the third threshold by 120 ° C, lower than the first When the threshold value is 130 ° C, although the current chip temperature does not exceed the over temperature protection threshold, the temperature is still high. At this time, the controller 25 generates an interrupt, notifies the main processor 23, and the main processor 23 adjusts the working state of the chip. Such as suspending part of the process, adjusting the chip processing speed, and so on. The temperature threshold interval and the corresponding chip working state can be set according to the actual application environment. The embodiment of the present invention is only an example of the above example, and is not limited to the scope.
图6为本发明实施例二芯片温度检测和控制装置结构示意图，如图6所示，本发明实施例二所述芯片温度检测和控制装置结构包括温度传感器61、控制器25、主处理器23，所述温度检测器21、量化校准器22、控制开关24等部件可以集成在温度传感器61中，所述温度传感器61配置为将 芯片中多个位置的温度信息转换成数字信号送到外部。所述控制器25，配置为控制温度传感器61按照要求进行温度信息的检测，然后将检测到的温度信息转换成apb总线格式，同时产生特定的中断，送给处理器23供处理器进行处理。FIG. 6 is a schematic structural diagram of a chip temperature detecting and controlling apparatus according to Embodiment 2 of the present invention. As shown in FIG. 6, the chip temperature detecting and controlling apparatus structure according to Embodiment 2 of the present invention includes a temperature sensor 61, a controller 25, and a main processor 23. The temperature detector 21, the quantizer calibrator 22, the control switch 24, and the like may be integrated in the temperature sensor 61, and the temperature sensor 61 is configured to The temperature information at multiple locations in the chip is converted to a digital signal and sent to the outside. The controller 25 is configured to control the temperature sensor 61 to detect temperature information as required, and then convert the detected temperature information into an abb bus format, while generating a specific interrupt, and send it to the processor 23 for processing by the processor.
本发明实施例中，所述控制器25控制温度传感器61进行温度检测过程可以设置成单次检测，也可以设置成周期性检测；可以同时对一个芯片的多个区域进行温度信息检测，也可以同时对多个芯片的多个区域进行温度信息检测，检测完成时产生完成中断通知处理器，上报探测点的最高、最低和平均温度信息。并将检测到的温度与各个阈值进行比较，当芯片温度高于过温保护门限时，产生过温保护的中断；当芯片温度处于其他温度阈值区间时，产生对应的中断，处理器23响应对应中断后，根据系统的工作场景调整芯片的工作状态，让芯片温度控制在设定的范围内。In the embodiment of the present invention, the controller 25 controls the temperature sensor 61 to perform a temperature detection process, which may be set to a single detection, or may be set to periodic detection; temperature information detection may be performed on multiple regions of one chip at the same time, or At the same time, temperature information detection is performed on multiple regions of the plurality of chips, and when the detection is completed, the completion interrupt notification processor is generated, and the highest, lowest, and average temperature information of the detection points are reported. And comparing the detected temperature with each threshold, when the chip temperature is higher than the over-temperature protection threshold, an over-temperature protection interruption occurs; when the chip temperature is in another temperature threshold interval, a corresponding interrupt is generated, and the processor 23 responds to the corresponding After the interruption, adjust the working state of the chip according to the working scene of the system, and let the temperature of the chip be controlled within the set range.
其中，所述单次检测，为处理器21发起一次命令对至少一个区域进行一次温度检测，检测完成发送中断给处理器，上报检测的温度的最大值，最小值和平均值周期性检测，是处理器21配置好测量周期后，控制器25控制温度传感器61周期性的经过配置的时间点对芯片温度测试点进行一次操作的模式，整个检测处理过程不停止，会一直进行下去。当检测到的信息满足温度探测点设置的状态条件时，就会触发中断进行芯片工作状态的控制。例如，使能过温保护中断时，探测点温度超过第一阈值140℃时产生过温保护的中断；使能低温上报中断使能时，探测点温度低于第七阈值40℃，产生中断上报状态。The single detection, the processor 21 initiates a command to perform temperature detection on at least one area, and the detection completes the transmission interruption to the processor, and reports the detected maximum value, minimum value, and average value of the periodic detection. After the processor 21 is configured with the measurement period, the controller 25 controls the mode in which the temperature sensor 61 periodically operates the chip temperature test point at a configured time point. The entire detection process does not stop and continues. When the detected information satisfies the state condition set by the temperature detection point, the interrupt is controlled to control the working state of the chip. For example, when the over-temperature protection interrupt is enabled, the over-temperature protection interrupt is generated when the probe point temperature exceeds the first threshold value of 140 ° C. When the low-temperature report interrupt enable is enabled, the probe point temperature is lower than the seventh threshold value of 40 ° C, and an interrupt report is generated. status.
如此，完成对芯片温度信息检测，并根据芯片温度，调整芯片工作状态的过程。In this way, the process of detecting the chip temperature information and adjusting the working state of the chip according to the chip temperature is completed.
图7为本发明实施例对芯片温度进行检测时，温度检测部件211在芯片上的布局结构示意图，如图7所述，可以将4个温度检测部件211放置 到芯片工作频率、散热高的layout block附近，检测的高能耗的block的温度信息，用于作为整个芯片工作状态调整的依据。FIG. 7 is a schematic diagram showing the layout structure of the temperature detecting component 211 on the chip when the chip temperature is detected according to an embodiment of the present invention. As shown in FIG. 7, four temperature detecting components 211 can be placed. The temperature information of the detected high energy consumption block is used as the basis for adjusting the working state of the whole chip to the vicinity of the layout block with high chip operating frequency and high heat dissipation.
本发明实施例中，可以同时对多个芯片的多个区域进行温度信息检测，将多个芯片的温度检测结果集中进行处理。图8为本发明实施例多个芯片温度采集装置结构示意图，如图8所示，在芯片A和芯片C内部设置温度检测部件TM81和控制开关SW82，芯片B作为主控的芯片内部集成温度检测部件TM81、控制开关SW82、量化校准器CP93、控制器Ct184和主处理器CPU85。芯片A和芯片C采集到的温度信息，在控制器Ct184的控制下将多个探测点的温度信息送到芯片B内部，芯片B根据上述处理方式，将温度信息发送给CPU，供CPU进行芯片工作方式的控制。In the embodiment of the present invention, temperature information detection can be performed on multiple regions of a plurality of chips at the same time, and temperature detection results of the plurality of chips are collectively processed. 8 is a schematic structural diagram of a plurality of chip temperature collecting devices according to an embodiment of the present invention. As shown in FIG. 8, a temperature detecting component TM81 and a control switch SW82 are disposed inside the chip A and the chip C, and the chip B is used as a master integrated chip internal temperature detecting. The component TM81, the control switch SW82, the quantization calibrator CP93, the controller Ct184, and the main processor CPU 85. The temperature information collected by the chip A and the chip C is sent to the inside of the chip B under the control of the controller Ct184, and the chip B sends the temperature information to the CPU according to the above processing manner for the CPU to perform the chip. Control of the way of working.
如此通过将板级多个芯片互联起来，在检测各个芯片内部温度信息的同时，可以有效地将各个芯片的温度信息共享起来，同时以此检测芯片板级的温度，实现芯片内部、芯片间、系统板级温度信息的获取和检测。于产品的各种预警、自适应调整和控制的决策等。By interconnecting the plurality of chips at the board level, the temperature information of each chip can be effectively shared while detecting the temperature information of each chip, and the temperature of the chip board level can be detected at the same time to realize the internal and inter-chip, System board level temperature information acquisition and detection. Various warnings, adaptive adjustments, and control decisions for the product.
本发明实施例中，如果以软件功能模块的形式实现上述芯片温度检测和控制方法，并作为独立的产品销售或使用时，也可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明实施例的技术方案本质上或者说对现有技术做出贡献的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机、服务器、或者网络设备等)执行本发明各个实施例所述方法的全部或部分。而前述的存储介质包括：U盘、移动硬盘、只读存储器(Read Only Memory，ROM)、磁碟或者光盘等各种可以存储程序代码的介质。这样，本发明实施例不限制于任何特定的硬件和软件结合。In the embodiment of the present invention, if the above chip temperature detecting and controlling method is implemented in the form of a software function module and sold or used as a separate product, it may also be stored in a computer readable storage medium. Based on such understanding, the technical solution of the embodiments of the present invention may be embodied in the form of a software product in essence or in the form of a software product stored in a storage medium, including a plurality of instructions. A computer device (which may be a personal computer, server, or network device, etc.) is caused to perform all or part of the methods described in various embodiments of the present invention. The foregoing storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read only memory (ROM), a magnetic disk, or an optical disk. Thus, embodiments of the invention are not limited to any specific combination of hardware and software.
相应地，本发明实施例还提供一种计算机存储介质，该计算机存储介质中存储有计算机程序，该计算机程序用于执行本发明实施例的上述芯片 温度检测和控制方法。Correspondingly, an embodiment of the present invention further provides a computer storage medium, where the computer storage medium stores a computer program, where the computer program is used to execute the foregoing chip of the embodiment of the present invention. Temperature detection and control methods.
本发明是实例中记载的芯片温度检测和控制的方法、装置及存储介质方法只以上述实施例为例，但不仅限于此，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。The method, the device and the storage medium method of the chip temperature detection and control described in the examples are only exemplified by the above embodiments, but are not limited thereto, and those skilled in the art should understand that the foregoing embodiments can still be used. The technical solutions are modified, or some or all of the technical features are equivalently replaced; and the modifications or substitutions do not deviate from the technical solutions of the embodiments of the present invention.
以上所述仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。 The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention.

Claims (11)

  1. 一种芯片温度检测和控制方法，所述方法包括：A chip temperature detecting and controlling method, the method comprising:
    检测芯片的温度信息，将所述温度信息转换成电压信息；Detecting temperature information of the chip, converting the temperature information into voltage information;
    对所述电压信息进行量化和校准；Quantifying and calibrating the voltage information;
    所根据所述量化和校准后的电压信息，控制芯片的工作状态。The operating state of the chip is controlled based on the quantized and calibrated voltage information.
  2. 根据权利要求1所述方法，其中，所述检测芯片的温度信息，将所述温度信息转换成电压信息包括：检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；The method according to claim 1, wherein said detecting temperature information of the chip, converting said temperature information into voltage information comprises: detecting a temperature of at least one position on the chip, converting temperature information of the detected at least one position into Corresponding voltage information;
    相应地，所述对电压信息进行量化和校准方法包括：选择至少一个电压信息进行量化和校准。Accordingly, the method of quantizing and calibrating voltage information includes selecting at least one voltage information for quantization and calibration.
  3. 根据权利要求1或2所述方法，其中，所述将温度信息转换成电压信息包括：The method of claim 1 or 2, wherein said converting temperature information into voltage information comprises:
    根据三极管I-V关系的温度特性，将所述温度信息转换成电压信息。The temperature information is converted into voltage information according to the temperature characteristics of the triode I-V relationship.
  4. 根据权利要求1所述电路，其中，所述根据所述量化和校准后的电压信息，控制芯片的工作状态包括：当所述量化和校准后的电压信息对应的温度值满足预设条件时，产生中断，并根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态。The circuit of claim 1, wherein the controlling the operating state of the chip according to the quantized and calibrated voltage information comprises: when the temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition, An interrupt is generated, and the operating state of the chip is controlled according to the temperature value corresponding to the quantized and calibrated voltage information.
  5. 根据权利要求4所述电路，其中，所述根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态包括但不限于：根据所述量化和校准后的电压信息对应的温度值，进行温度告警、暂停/开启、调整芯片部分处理功能。The circuit according to claim 4, wherein said operating state of said control chip according to said temperature value corresponding to said quantized and calibrated voltage information comprises, but is not limited to: temperature corresponding to said quantized and calibrated voltage information Value, temperature alarm, pause/on, adjust chip processing.
  6. 一种芯片温度检测和控制装置，所述装置包括：温度检测器、量化校准器、主处理器；其中，A chip temperature detecting and controlling device, the device comprising: a temperature detector, a quantization calibrator, a main processor; wherein
    所述温度检测器，配置为检测芯片的温度信息，将所述温度信息转换 成电压信息；The temperature detector is configured to detect temperature information of the chip and convert the temperature information Voltage information
    所述量化校准器，配置为对所述电压信息进行量化和校准；The quantization calibrator is configured to quantize and calibrate the voltage information;
    所述主处理器，配置为所根据所述量化和校准后的电压信息，控制芯片的工作状态。The main processor is configured to control an operating state of the chip according to the quantized and calibrated voltage information.
  7. 根据权利要求6所述装置，其中，所述温度检测器配置为：The apparatus of claim 6 wherein said temperature detector is configured to:
    检测芯片上至少一个位置的温度，将检测到的至少一个位置的温度信息转换成对应的电压信息；Detecting a temperature of at least one location on the chip, converting temperature information of the detected at least one location into corresponding voltage information;
    所述装置还包括控制开关，配置为选择至少一个电压信息输送到量化校准器。The apparatus also includes a control switch configured to select at least one voltage information to be delivered to the quantization calibrator.
  8. 根据权利要求6或7所述装置，其中，所述温度检测器配置为：The apparatus according to claim 6 or 7, wherein said temperature detector is configured to:
    根据三极管I-V关系的温度特性，将所述温度信息转换成电压信息。The temperature information is converted into voltage information according to the temperature characteristics of the triode I-V relationship.
  9. 根据权利要求6所述装置，其中，所述装置还包括控制器，配置为当所述量化和校准后的电压信息对应的温度值满足预设条件时，产生中断，并通知主处理器；The apparatus according to claim 6, wherein the apparatus further comprises a controller configured to generate an interrupt when the temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition, and notify the main processor;
    所述主处理器配置为：根据所述量化和校准后的电压信息对应的温度值，控制芯片的工作状态。The main processor is configured to: control an operating state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information.
  10. 根据权利要求9所述装置，其中，所述主处理器，配置为：根据所述量化和校准后的电压信息对应的温度值，进行温度告警、暂停/开启、调整芯片部分处理功能。The apparatus according to claim 9, wherein the main processor is configured to perform a temperature alarm, a pause/turn on, and a chip partial processing function according to the temperature value corresponding to the quantized and calibrated voltage information.
  11. 一种计算机存储介质，所述计算机存储介质中存储有计算机可执行指令，该计算机可执行指令用于执行权利要求1至5任一项所述的芯片温度检测和控制方法。 A computer storage medium storing computer executable instructions for performing the chip temperature detection and control method according to any one of claims 1 to 5.
PCT/CN2015/096182 2015-07-10 2015-12-01 Chip temperature detection and control method and apparatus, and storage medium WO2017008428A1 (en)

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