WO2017000327A1 - Display panel, thin film transistor array substrate, and manufacturing method therefor - Google Patents

Display panel, thin film transistor array substrate, and manufacturing method therefor Download PDF

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Publication number
WO2017000327A1
WO2017000327A1 PCT/CN2015/084287 CN2015084287W WO2017000327A1 WO 2017000327 A1 WO2017000327 A1 WO 2017000327A1 CN 2015084287 W CN2015084287 W CN 2015084287W WO 2017000327 A1 WO2017000327 A1 WO 2017000327A1
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layer
transparent electrode
repair
disposed
metal
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PCT/CN2015/084287
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French (fr)
Chinese (zh)
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叶江波
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武汉华星光电技术有限公司
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Publication of WO2017000327A1 publication Critical patent/WO2017000327A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel, a thin film transistor array substrate, and a method of fabricating the same.
  • a thin film transistor array substrate in a conventional display panel generally includes a substrate 101, a scan line layer, a first insulating layer 102, an amorphous silicon layer, a data line layer 103, a first transparent electrode layer 104, a second insulating layer, and A second transparent electrode layer.
  • holes 105 are often formed on the first transparent electrode layer 104, and the holes 105 are the first transparent electrode layer 104.
  • the upper particles are formed by the action of the corrosive substance 201 or the development process (developing solution 301).
  • these holes may cause some of the lines in the data line layer to be broken, thereby affecting the display effect of the entire display panel.
  • An object of the present invention is to provide a display panel, a thin film transistor array substrate, and a method of fabricating the same, which can avoid occurrence of wire breakage defects and ensure display effects.
  • a display panel comprising: a color filter array substrate; a liquid crystal layer; and a thin film transistor array substrate;
  • the thin film transistor array substrate comprises: a substrate; a first metal layer, wherein the first metal layer is disposed on a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer; a semiconductor layer, the semiconductor layer is disposed on the first insulating layer; and a second metal a layer, the second metal layer is disposed on the first insulating layer; a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer; and the second insulating layer a second insulating layer disposed on the first transparent electrode layer; and a second transparent electrode layer disposed on the second insulating layer; wherein the thin film transistor array
  • the substrate further includes: a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer, the repair layer Used for repair a first hole at the second
  • the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer from being affected at the second hole
  • the first hole is formed by the action of a corrosive substance or a developing solution after the first transparent electrode layer is formed; the material of the repair layer is the same as the first hole
  • the material of a transparent electrode layer is the same.
  • a display panel comprising: a color filter array substrate; a liquid crystal layer; and a thin film transistor array substrate;
  • the thin film transistor array substrate comprises: a substrate; a first metal layer, wherein the first metal layer is disposed on a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer; a semiconductor layer, the semiconductor layer is disposed on the first insulating layer; and a second metal a layer, the second metal layer is disposed on the first insulating layer; a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer; and the second insulating layer a second insulating layer disposed on the first transparent electrode layer; and a second transparent electrode layer disposed on the second insulating layer; the thin film transistor array substrate further And including: a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer.
  • the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the repair layer, and the second insulation are sequentially formed.
  • the repair layer is used to repair a first hole on the first transparent electrode layer at the second metal layer to prevent the second metal layer from being affected at the first hole damage.
  • the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer from being affected at the second hole damage.
  • the first hole is formed by the action of a corrosive substance or a developer after the first transparent electrode layer is formed.
  • the material of the repair layer is any one of a transparent metal and a transparent insulating material.
  • the material of the repair layer is the same as the material of the first transparent electrode layer.
  • a thin film transistor array substrate includes: a substrate; a first metal layer, the first metal layer is disposed on the substrate; a first insulating layer, the first insulating layer is disposed on the substrate On the substrate and the first metal layer; a semiconductor layer, the semiconductor layer is disposed on the first insulating layer; a second metal layer, the second metal layer is disposed on the first insulating layer; a transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer; and a second insulating layer is disposed on the first transparent electrode layer; a second transparent electrode layer, the second transparent electrode layer is disposed on the second insulating layer; the thin film transistor array substrate further includes: a repair layer, wherein the repair layer is disposed on the first transparent electrode layer, And, the repair layer is disposed between the first transparent electrode and the second insulating layer.
  • the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the repair layer, and the first The second insulating layer and the second transparent electrode layer are sequentially formed.
  • the repair layer is used to repair a first hole at the second metal layer on the first transparent electrode layer to prevent the second metal layer from being in the first hole Damaged.
  • the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer from being in the second hole Damaged.
  • the first hole is formed by the action of a corrosive substance or a developing solution after the first transparent electrode layer is formed.
  • the material of the repair layer is any one of a transparent metal and a transparent insulating material.
  • the material of the repair layer is the same as that of the first transparent electrode layer.
  • a method of fabricating a thin film transistor array substrate comprising the steps of: A. sequentially forming the first metal layer, the first insulating layer, the semiconductor layer, and the second on the substrate a metal layer, the first transparent electrode layer; B, the repair layer is disposed on the first transparent electrode layer to repair the second transparent layer on the first transparent electrode layer by using the repair layer a first hole at the bottom; C. The second insulating layer and the second transparent electrode layer are sequentially disposed on the repair layer.
  • the material of the repair layer is any one of a transparent metal and a transparent insulating material.
  • the material of the repair layer is the same as the material of the first transparent electrode layer.
  • the first hole is formed by the action of a corrosive substance or a developer after the first transparent electrode layer is formed.
  • the present invention can effectively avoid the occurrence of wire break defects in the second metal layer of the thin film transistor array substrate, and is advantageous for ensuring the display quality of the display panel.
  • FIG. 3 are schematic diagrams showing a broken portion of a thin film transistor array substrate in a conventional display panel during fabrication
  • FIG. 4 is a schematic view of a broken portion in a thin film transistor array substrate in a conventional display panel
  • FIG. 5 is a schematic view showing an improvement of the thin film transistor array substrate of the present invention in order to avoid occurrence of a broken portion
  • FIG. 6 is a flow chart of a method of fabricating a thin film transistor array substrate of the present invention.
  • the display panel of the present invention may be a TFT-LCD (Thin Film Transistor Liquid) Crystal Display, thin film transistor liquid crystal display panel, etc.
  • TFT-LCD Thin Film Transistor Liquid
  • LCD Thin Film Transistor Liquid
  • FIG. 5 is a schematic view showing an improvement of the thin film transistor array substrate of the present invention in order to avoid occurrence of a broken portion.
  • the display panel of the present invention includes a color filter array substrate, a liquid crystal layer, and a thin film transistor array substrate.
  • the thin film transistor array substrate includes a substrate 101, a first metal layer, a first insulating layer 102, a semiconductor layer, a second metal layer 103, a first transparent electrode layer 104, a repair layer 501, a second insulating layer, and a second Transparent electrode layer.
  • the first metal layer is disposed on the substrate 101; the first insulating layer 102 is disposed on the substrate 101 and the first metal layer; and the semiconductor layer is disposed on the first insulating layer 102
  • the second metal layer 103 is disposed on the first insulating layer 102; the first transparent electrode is disposed on the first insulating layer 102 and the second metal layer 103; the repair layer 501 is disposed On the first transparent electrode layer 104; the second insulating layer is disposed on the repair layer 501 and/or the first transparent electrode layer; the second transparent electrode layer is disposed on the second insulating layer On the floor.
  • the first metal layer, the first insulating layer 102, the semiconductor layer, the second metal layer 103, the first transparent electrode layer 104, the repair layer 501, and the The second insulating layer and the second transparent electrode layer are sequentially formed.
  • the repair layer 501 is used to repair the first hole 105 on the first transparent electrode layer 104 at the second metal layer 103 to prevent the second metal layer 103 from being
  • the first hole 105 is damaged.
  • the first hole 105 is formed by the action of the corrosive substance 201 and/or the developing process (developing solution 301) after the first transparent electrode layer 104 is formed. .
  • the first transparent electrode layer 104 is used to repair the second hole 502 of the repair layer 501 at the second metal layer 103 to prevent the second metal layer 103 from being The second hole 502 is damaged.
  • the second hole 502 is formed by the action of the corrosive substance 201 and/or the developing process (developing solution 301) after the repair layer 501 is formed.
  • the material of the repair layer 501 is any one of a transparent metal and a transparent insulating material.
  • the material of the repair layer 501 is the same as the material of the first transparent electrode layer 104, that is, the repair layer 501 is also a transparent electrode layer (transparent metal).
  • the film breakage at the first film formation will be covered by the second film formation, and the second film formation film is broken by the first film formation bottom, and in the two film layers. In one place, the probability of membrane breakage due to particles is very small.
  • the first hole 105 in the first transparent electrode layer 104 is covered (patched) by the repair layer 501,
  • the second hole 502 in the repair layer 501 is blocked (patched) by the first transparent electrode layer 104, and a hole is formed in the same place in the first transparent electrode layer 104 and the repair layer 501 (the first hole The probability of 105 and the second hole 502) is very small.
  • the above technical solution can effectively avoid ITO (The first transparent electrode) the electrochemical reaction caused by the membrane breakage, so that the rate of improvement of the yield can reach 30%. That is to say, the above technical solution can effectively avoid the occurrence of wire breakage defects in the second metal layer 103 of the thin film transistor array substrate, and is advantageous for ensuring the display quality of the display panel corresponding to the thin film transistor array substrate.
  • ITO The first transparent electrode
  • FIG. 6 is a flowchart of a method of fabricating a thin film transistor array substrate of the present invention.
  • the manufacturing method of the thin film transistor array substrate of the present invention comprises the following steps:
  • step 601 sequentially forming the first metal layer, the first insulating layer 102, the semiconductor layer, the second metal layer 103, and the first transparent electrode layer 104 on the substrate 101. .
  • the repair layer 501 is disposed on the first transparent electrode layer 104 to repair the first transparent electrode layer 104 at the second metal layer 103 by using the repair layer 501
  • the first hole 105 is formed by the corrosive substance 201 and/or the developing process (developing solution 301) after the first transparent electrode layer 104 is formed.
  • step 603 the second insulating layer and the second transparent electrode layer are sequentially disposed on the repair layer 501.
  • the material of the repair layer 501 is any one of a transparent metal and a transparent insulating material.
  • the material of the repair layer 501 is the same as the material of the first transparent electrode layer 104, that is, the repair layer 501 is also a transparent electrode layer (transparent metal).
  • the film breakage at the first film formation will be covered by the second film formation, and the second film formation film is broken by the first film formation bottom, and in the two film layers. In one place, the probability of membrane breakage due to particles is very small.
  • the first hole 105 in the first transparent electrode layer 104 is covered (patched) by the repair layer 501,
  • the second hole 502 in the repair layer 501 is blocked (patched) by the first transparent electrode layer 104, and a hole is formed in the same place in the first transparent electrode layer 104 and the repair layer 501 (the first hole The probability of 105 and the second hole 502) is very small.
  • the above technical solution can effectively avoid ITO (The first transparent electrode) the electrochemical reaction caused by the membrane breakage, so that the rate of improvement of the yield can reach 30%. That is to say, the above technical solution can effectively avoid the occurrence of wire breakage defects in the second metal layer 103 of the thin film transistor array substrate, and is advantageous for ensuring the display quality of the display panel corresponding to the thin film transistor array substrate.
  • ITO The first transparent electrode

Abstract

Provided are a display panel, a thin film transistor array substrate, and a manufacturing method therefor. The display panel comprises a color filter array substrate, a liquid crystal layer, and a thin film transistor array substrate. The thin film transistor array substrate comprises a substrate (101), a first metal layer, a first insulation layer (102), a semiconductor layer, a second metal layer (103), a first transparent electrode layer (104), a second insulation layer, a second transparent electrode layer, and a patch layer (501). The patch layer (501) is disposed on the first transparent electrode layer (104), and is located between the first transparent electrode layer (104) and the second insulation layer. Thus, the defect of wire breakage in the second metal layer (103) is effectively avoided.

Description

显示面板、薄膜晶体管阵列基板及其制作方法 Display panel, thin film transistor array substrate and manufacturing method thereof 技术领域Technical field
本发明涉及显示技术领域，特别涉及一种显示面板、薄膜晶体管阵列基板及其制作方法。The present invention relates to the field of display technologies, and in particular, to a display panel, a thin film transistor array substrate, and a method of fabricating the same.
背景技术Background technique
如图1至图3 所示，传统的显示面板中的薄膜晶体管阵列基板一般包括基板101、扫描线层、第一绝缘层102、非晶硅层、数据线层103、第一透明电极层104、第二绝缘层以及第二透明电极层。Figure 1 to Figure 3 As shown, a thin film transistor array substrate in a conventional display panel generally includes a substrate 101, a scan line layer, a first insulating layer 102, an amorphous silicon layer, a data line layer 103, a first transparent electrode layer 104, a second insulating layer, and A second transparent electrode layer.
其中，在形成所述数据线层103之后，以及在形成所述第二绝缘层之前，所述第一透明电极层104上往往会出现孔洞105，这些孔洞105是所述第一透明电极层104上的颗粒受腐蚀性物质201的作用或显影工序（显影液301）的影响而形成的。After the formation of the data line layer 103 and before the formation of the second insulating layer, holes 105 are often formed on the first transparent electrode layer 104, and the holes 105 are the first transparent electrode layer 104. The upper particles are formed by the action of the corrosive substance 201 or the development process (developing solution 301).
如图4所示，这些孔洞会造成所述数据线层中的部分线路断线，从而影响整个显示面板的显示效果。As shown in FIG. 4, these holes may cause some of the lines in the data line layer to be broken, thereby affecting the display effect of the entire display panel.
故，有必要提出一种新的技术方案，以解决上述技术问题。Therefore, it is necessary to propose a new technical solution to solve the above technical problems.
技术问题technical problem
本发明的目的在于提供一种显示面板、薄膜晶体管阵列基板及其制作方法，其能避免出现断线缺陷，确保显示效果。An object of the present invention is to provide a display panel, a thin film transistor array substrate, and a method of fabricating the same, which can avoid occurrence of wire breakage defects and ensure display effects.
技术解决方案Technical solution
一种显示面板，所述显示面板包括：彩色滤光片阵列基板；液晶层；以及薄膜晶体管阵列基板；所述薄膜晶体管阵列基板包括：基板；第一金属层，所述第一金属层设置于所述基板上；第一绝缘层，所述第一绝缘层设置于所述基板和所述第一金属层上；半导体层，所述半导体层设置于所述第一绝缘层上；第二金属层，所述第二金属层设置于所述第一绝缘层上；第一透明电极层，所述第一透明电极设置于所述第一绝缘层和所述第二金属层上；第二绝缘层，所述第二绝缘层设置于所述第一透明电极层上；以及第二透明电极层，所述第二透明电极层设置于所述第二绝缘层上；其中，所述薄膜晶体管阵列基板还包括：修补层，所述修补层设置于所述第一透明电极层上，并且，所述修补层设置于所述第一透明电极和所述第二绝缘层之间，所述修补层用于修补所述第一透明电极层上位于所述第二金属层处的第一孔洞，以防止所述第二金属层在所述第一孔洞处受损；所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层、所述修补层、所述第二绝缘层和所述第二透明电极层是依次形成的；所述修补层的材料为透明金属、透明绝缘材料中的任意一者。A display panel, comprising: a color filter array substrate; a liquid crystal layer; and a thin film transistor array substrate; the thin film transistor array substrate comprises: a substrate; a first metal layer, wherein the first metal layer is disposed on a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer; a semiconductor layer, the semiconductor layer is disposed on the first insulating layer; and a second metal a layer, the second metal layer is disposed on the first insulating layer; a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer; and the second insulating layer a second insulating layer disposed on the first transparent electrode layer; and a second transparent electrode layer disposed on the second insulating layer; wherein the thin film transistor array The substrate further includes: a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer, the repair layer Used for repair a first hole at the second metal layer on the first transparent electrode layer to prevent the second metal layer from being damaged at the first hole; the first metal layer, the first insulation a layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the repair layer, the second insulating layer, and the second transparent electrode layer are sequentially formed; the repair layer The material is any one of transparent metal and transparent insulating material.
在上述显示面板中，所述第一透明电极层用于修补所述修补层上位于所述第二金属层处的第二孔洞，以防止所述第二金属层在所述第二孔洞处受损；所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的；所述修补层的材料跟所述第一透明电极层的材料相同。In the above display panel, the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer from being affected at the second hole The first hole is formed by the action of a corrosive substance or a developing solution after the first transparent electrode layer is formed; the material of the repair layer is the same as the first hole The material of a transparent electrode layer is the same.
一种显示面板，所述显示面板包括：彩色滤光片阵列基板；液晶层；以及薄膜晶体管阵列基板；所述薄膜晶体管阵列基板包括：基板；第一金属层，所述第一金属层设置于所述基板上；第一绝缘层，所述第一绝缘层设置于所述基板和所述第一金属层上；半导体层，所述半导体层设置于所述第一绝缘层上；第二金属层，所述第二金属层设置于所述第一绝缘层上；第一透明电极层，所述第一透明电极设置于所述第一绝缘层和所述第二金属层上；第二绝缘层，所述第二绝缘层设置于所述第一透明电极层上；以及第二透明电极层，所述第二透明电极层设置于所述第二绝缘层上；所述薄膜晶体管阵列基板还包括：修补层，所述修补层设置于所述第一透明电极层上，并且，所述修补层设置于所述第一透明电极和所述第二绝缘层之间。A display panel, comprising: a color filter array substrate; a liquid crystal layer; and a thin film transistor array substrate; the thin film transistor array substrate comprises: a substrate; a first metal layer, wherein the first metal layer is disposed on a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer; a semiconductor layer, the semiconductor layer is disposed on the first insulating layer; and a second metal a layer, the second metal layer is disposed on the first insulating layer; a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer; and the second insulating layer a second insulating layer disposed on the first transparent electrode layer; and a second transparent electrode layer disposed on the second insulating layer; the thin film transistor array substrate further And including: a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer.
在上述显示面板中，所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层、所述修补层、所述第二绝缘层和所述第二透明电极层是依次形成的。In the above display panel, the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the repair layer, and the second insulation The layer and the second transparent electrode layer are sequentially formed.
在上述显示面板中，所述修补层用于修补所述第一透明电极层上位于所述第二金属层处的第一孔洞，以防止所述第二金属层在所述第一孔洞处受损。In the above display panel, the repair layer is used to repair a first hole on the first transparent electrode layer at the second metal layer to prevent the second metal layer from being affected at the first hole damage.
在上述显示面板中，所述第一透明电极层用于修补所述修补层上位于所述第二金属层处的第二孔洞，以防止所述第二金属层在所述第二孔洞处受损。In the above display panel, the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer from being affected at the second hole damage.
在上述显示面板中，所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的。In the above display panel, the first hole is formed by the action of a corrosive substance or a developer after the first transparent electrode layer is formed.
在上述显示面板中，所述修补层的材料为透明金属、透明绝缘材料中的任意一者。In the above display panel, the material of the repair layer is any one of a transparent metal and a transparent insulating material.
在上述显示面板中，所述修补层的材料跟所述第一透明电极层的材料相同。In the above display panel, the material of the repair layer is the same as the material of the first transparent electrode layer.
一种薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：基板；第一金属层，所述第一金属层设置于所述基板上；第一绝缘层，所述第一绝缘层设置于所述基板和所述第一金属层上；半导体层，所述半导体层设置于所述第一绝缘层上；第二金属层，所述第二金属层设置于所述第一绝缘层上；第一透明电极层，所述第一透明电极设置于所述第一绝缘层和所述第二金属层上；第二绝缘层，所述第二绝缘层设置于所述第一透明电极层上；以及第二透明电极层，所述第二透明电极层设置于所述第二绝缘层上；所述薄膜晶体管阵列基板还包括：修补层，所述修补层设置于所述第一透明电极层上，并且，所述修补层设置于所述第一透明电极和所述第二绝缘层之间。A thin film transistor array substrate, the thin film transistor array substrate includes: a substrate; a first metal layer, the first metal layer is disposed on the substrate; a first insulating layer, the first insulating layer is disposed on the substrate On the substrate and the first metal layer; a semiconductor layer, the semiconductor layer is disposed on the first insulating layer; a second metal layer, the second metal layer is disposed on the first insulating layer; a transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer; and a second insulating layer is disposed on the first transparent electrode layer; a second transparent electrode layer, the second transparent electrode layer is disposed on the second insulating layer; the thin film transistor array substrate further includes: a repair layer, wherein the repair layer is disposed on the first transparent electrode layer, And, the repair layer is disposed between the first transparent electrode and the second insulating layer.
在上述薄膜晶体管阵列基板中，所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层、所述修补层、所述第二绝缘层和所述第二透明电极层是依次形成的。In the above thin film transistor array substrate, the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the repair layer, and the first The second insulating layer and the second transparent electrode layer are sequentially formed.
在上述薄膜晶体管阵列基板中，所述修补层用于修补所述第一透明电极层上位于所述第二金属层处的第一孔洞，以防止所述第二金属层在所述第一孔洞处受损。In the above thin film transistor array substrate, the repair layer is used to repair a first hole at the second metal layer on the first transparent electrode layer to prevent the second metal layer from being in the first hole Damaged.
在上述薄膜晶体管阵列基板中，所述第一透明电极层用于修补所述修补层上位于所述第二金属层处的第二孔洞，以防止所述第二金属层在所述第二孔洞处受损。In the above thin film transistor array substrate, the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer from being in the second hole Damaged.
在上述薄膜晶体管阵列基板中，所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的。In the above thin film transistor array substrate, the first hole is formed by the action of a corrosive substance or a developing solution after the first transparent electrode layer is formed.
在上述薄膜晶体管阵列基板中，所述修补层的材料为透明金属、透明绝缘材料中的任意一者。In the above thin film transistor array substrate, the material of the repair layer is any one of a transparent metal and a transparent insulating material.
在上述薄膜晶体管阵列基板中，所述修补层的材料跟所述第一透明电极层的材料相同。In the above thin film transistor array substrate, the material of the repair layer is the same as that of the first transparent electrode layer.
一种上述薄膜晶体管阵列基板的制作方法，所述方法包括以下步骤：A、在所述基板上依次形成所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层；B、在所述第一透明电极层上设置所述修补层，以利用所述修补层修补所述第一透明电极层上位于所述第二金属层处的第一孔洞；C、在所述修补层上依次设置所述第二绝缘层和所述第二透明电极层。A method of fabricating a thin film transistor array substrate, the method comprising the steps of: A. sequentially forming the first metal layer, the first insulating layer, the semiconductor layer, and the second on the substrate a metal layer, the first transparent electrode layer; B, the repair layer is disposed on the first transparent electrode layer to repair the second transparent layer on the first transparent electrode layer by using the repair layer a first hole at the bottom; C. The second insulating layer and the second transparent electrode layer are sequentially disposed on the repair layer.
在上述薄膜晶体管阵列基板的制作方法中，所述修补层的材料为透明金属、透明绝缘材料中的任意一者。In the method of fabricating the thin film transistor array substrate, the material of the repair layer is any one of a transparent metal and a transparent insulating material.
在上述薄膜晶体管阵列基板的制作方法中，所述修补层的材料跟所述第一透明电极层的材料相同。In the above method of fabricating a thin film transistor array substrate, the material of the repair layer is the same as the material of the first transparent electrode layer.
在上述薄膜晶体管阵列基板的制作方法中，所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的。In the method of fabricating the thin film transistor array substrate, the first hole is formed by the action of a corrosive substance or a developer after the first transparent electrode layer is formed.
有益效果 Beneficial effect
相对现有技术，本发明能有效避免所述薄膜晶体管阵列基板的所述第二金属层中出现断线缺陷，有利于确保显示面板的显示质量。Compared with the prior art, the present invention can effectively avoid the occurrence of wire break defects in the second metal layer of the thin film transistor array substrate, and is advantageous for ensuring the display quality of the display panel.
附图说明DRAWINGS
图1至图3为传统的显示面板中的薄膜晶体管阵列基板在制作过程中形成断线部的示意图；1 to FIG. 3 are schematic diagrams showing a broken portion of a thin film transistor array substrate in a conventional display panel during fabrication;
图4为传统的显示面板中的薄膜晶体管阵列基板中的断线部的示意图；4 is a schematic view of a broken portion in a thin film transistor array substrate in a conventional display panel;
图5为本发明的薄膜晶体管阵列基板为避免出现断线部所作出的改进的示意图；5 is a schematic view showing an improvement of the thin film transistor array substrate of the present invention in order to avoid occurrence of a broken portion;
图6为本发明的薄膜晶体管阵列基板的制作方法的流程图。6 is a flow chart of a method of fabricating a thin film transistor array substrate of the present invention.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
本说明书所使用的词语“实施例”意指实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为“一个或多个”，除非另外指定或从上下文可以清楚确定单数形式。The word "embodiment" as used in this specification means an example, an example or an illustration. In addition, the articles "a" or "an" or "an"
本发明的显示面板可以是TFT-LCD（Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示面板）等。The display panel of the present invention may be a TFT-LCD (Thin Film Transistor Liquid) Crystal Display, thin film transistor liquid crystal display panel, etc.
参考图5，图5为本发明的薄膜晶体管阵列基板为避免出现断线部所作出的改进的示意图。Referring to FIG. 5, FIG. 5 is a schematic view showing an improvement of the thin film transistor array substrate of the present invention in order to avoid occurrence of a broken portion.
本发明的显示面板包括彩色滤光片阵列基板、液晶层以及薄膜晶体管阵列基板。The display panel of the present invention includes a color filter array substrate, a liquid crystal layer, and a thin film transistor array substrate.
其中，所述薄膜晶体管阵列基板包括基板101、第一金属层、第一绝缘层102、半导体层、第二金属层103、第一透明电极层104、修补层501、第二绝缘层、第二透明电极层。The thin film transistor array substrate includes a substrate 101, a first metal layer, a first insulating layer 102, a semiconductor layer, a second metal layer 103, a first transparent electrode layer 104, a repair layer 501, a second insulating layer, and a second Transparent electrode layer.
所述第一金属层设置于所述基板101上；所述第一绝缘层102设置于所述基板101和所述第一金属层上；所述半导体层设置于所述第一绝缘层102上；所述第二金属层103设置于所述第一绝缘层102上；所述第一透明电极设置于所述第一绝缘层102和所述第二金属层103上；所述修补层501设置于所述第一透明电极层104上；所述第二绝缘层设置于所述修补层501和/或所述第一透明电极层上；所述第二透明电极层设置于所述第二绝缘层上。The first metal layer is disposed on the substrate 101; the first insulating layer 102 is disposed on the substrate 101 and the first metal layer; and the semiconductor layer is disposed on the first insulating layer 102 The second metal layer 103 is disposed on the first insulating layer 102; the first transparent electrode is disposed on the first insulating layer 102 and the second metal layer 103; the repair layer 501 is disposed On the first transparent electrode layer 104; the second insulating layer is disposed on the repair layer 501 and/or the first transparent electrode layer; the second transparent electrode layer is disposed on the second insulating layer On the floor.
在本实施例中，所述第一金属层、所述第一绝缘层102、所述半导体层、所述第二金属层103、所述第一透明电极层104、所述修补层501、所述第二绝缘层和所述第二透明电极层是依次形成的。In this embodiment, the first metal layer, the first insulating layer 102, the semiconductor layer, the second metal layer 103, the first transparent electrode layer 104, the repair layer 501, and the The second insulating layer and the second transparent electrode layer are sequentially formed.
在本实施例中，所述修补层501用于修补所述第一透明电极层104上位于所述第二金属层103处的第一孔洞105，以防止所述第二金属层103在所述第一孔洞105处受损。其中，所述第一孔洞105是在形成所述第一透明电极层104后，因所述第一透明电极层104受到腐蚀性物质201和/或显影工序（显影液301）的作用而形成的。In this embodiment, the repair layer 501 is used to repair the first hole 105 on the first transparent electrode layer 104 at the second metal layer 103 to prevent the second metal layer 103 from being The first hole 105 is damaged. The first hole 105 is formed by the action of the corrosive substance 201 and/or the developing process (developing solution 301) after the first transparent electrode layer 104 is formed. .
在本实施例中，所述第一透明电极层104用于修补所述修补层501上位于所述第二金属层103处的第二孔洞502，以防止所述第二金属层103在所述第二孔洞502处受损。其中，所述第二孔洞502是在形成所述修补层501后，因所述修补层50受到腐蚀性物质201和/或显影工序（显影液301）的作用而形成的。In this embodiment, the first transparent electrode layer 104 is used to repair the second hole 502 of the repair layer 501 at the second metal layer 103 to prevent the second metal layer 103 from being The second hole 502 is damaged. The second hole 502 is formed by the action of the corrosive substance 201 and/or the developing process (developing solution 301) after the repair layer 501 is formed.
所述修补层501的材料为透明金属、透明绝缘材料中的任意一者。优选地，所述修补层501的材料跟所述第一透明电极层104的材料相同，也就是说，所述修补层501也为透明电极层（透明金属）。The material of the repair layer 501 is any one of a transparent metal and a transparent insulating material. Preferably, the material of the repair layer 501 is the same as the material of the first transparent electrode layer 104, that is, the repair layer 501 is also a transparent electrode layer (transparent metal).
在上述技术方案中，第一次成膜时膜破的地方将被第二次成膜给覆盖，第二次成膜膜破的地方由第一次成膜垫底，而在两层膜中同一个地方因颗粒（Particle）造成膜破的概率非常之小。In the above technical solution, the film breakage at the first film formation will be covered by the second film formation, and the second film formation film is broken by the first film formation bottom, and in the two film layers. In one place, the probability of membrane breakage due to particles is very small.
也就是说，在设置所述第一透明电极层104和所述修补层501的过程中，所述第一透明电极层104中的第一孔洞105被所述修补层501覆盖（修补），所述修补层501中的第二孔洞502被所述第一透明电极层104遮挡（修补），所述第一透明电极层104和所述修补层501中同一个地方出现孔洞（所述第一孔洞105和所述第二孔洞502）的概率非常小。That is, in the process of disposing the first transparent electrode layer 104 and the repair layer 501, the first hole 105 in the first transparent electrode layer 104 is covered (patched) by the repair layer 501, The second hole 502 in the repair layer 501 is blocked (patched) by the first transparent electrode layer 104, and a hole is formed in the same place in the first transparent electrode layer 104 and the repair layer 501 (the first hole The probability of 105 and the second hole 502) is very small.
因此，上述技术方案可以有效避免 ITO （所述第一透明电极）膜破造成的电化学反应，从而可以使得良率的提升率可达到30%。也就是说，上述技术方案可以有效避免所述薄膜晶体管阵列基板的所述第二金属层103中出现断线缺陷，有利于确保所述薄膜晶体管阵列基板所对应的显示面板的显示质量。Therefore, the above technical solution can effectively avoid ITO (The first transparent electrode) the electrochemical reaction caused by the membrane breakage, so that the rate of improvement of the yield can reach 30%. That is to say, the above technical solution can effectively avoid the occurrence of wire breakage defects in the second metal layer 103 of the thin film transistor array substrate, and is advantageous for ensuring the display quality of the display panel corresponding to the thin film transistor array substrate.
参考图6，图6为本发明的薄膜晶体管阵列基板的制作方法的流程图。Referring to FIG. 6, FIG. 6 is a flowchart of a method of fabricating a thin film transistor array substrate of the present invention.
本发明的薄膜晶体管阵列基板的制作方法包括以下步骤：The manufacturing method of the thin film transistor array substrate of the present invention comprises the following steps:
A（步骤601）、在所述基板101上依次形成所述第一金属层、所述第一绝缘层102、所述半导体层、所述第二金属层103、所述第一透明电极层104。A (step 601), sequentially forming the first metal layer, the first insulating layer 102, the semiconductor layer, the second metal layer 103, and the first transparent electrode layer 104 on the substrate 101. .
B（步骤602）、在所述第一透明电极层104上设置所述修补层501，以利用所述修补层501修补所述第一透明电极层104上位于所述第二金属层103处的第一孔洞105。其中，所述第一孔洞105是在形成所述第一透明电极层104后，因受到腐蚀性物质201和/或显影工序（显影液301）的作用而形成的。B (step 602), the repair layer 501 is disposed on the first transparent electrode layer 104 to repair the first transparent electrode layer 104 at the second metal layer 103 by using the repair layer 501 The first hole 105. The first hole 105 is formed by the corrosive substance 201 and/or the developing process (developing solution 301) after the first transparent electrode layer 104 is formed.
C（步骤603）、在所述修补层501上依次设置所述第二绝缘层和所述第二透明电极层。C (step 603), the second insulating layer and the second transparent electrode layer are sequentially disposed on the repair layer 501.
在本实施例中，所述修补层501的材料为透明金属、透明绝缘材料中的任意一者。优选地，所述修补层501的材料跟所述第一透明电极层104的材料相同，也就是说，所述修补层501也为透明电极层（透明金属）。In this embodiment, the material of the repair layer 501 is any one of a transparent metal and a transparent insulating material. Preferably, the material of the repair layer 501 is the same as the material of the first transparent electrode layer 104, that is, the repair layer 501 is also a transparent electrode layer (transparent metal).
在上述技术方案中，第一次成膜时膜破的地方将被第二次成膜给覆盖，第二次成膜膜破的地方由第一次成膜垫底，而在两层膜中同一个地方因颗粒（Particle）造成膜破的概率非常之小。In the above technical solution, the film breakage at the first film formation will be covered by the second film formation, and the second film formation film is broken by the first film formation bottom, and in the two film layers. In one place, the probability of membrane breakage due to particles is very small.
也就是说，在设置所述第一透明电极层104和所述修补层501的过程中，所述第一透明电极层104中的第一孔洞105被所述修补层501覆盖（修补），所述修补层501中的第二孔洞502被所述第一透明电极层104遮挡（修补），所述第一透明电极层104和所述修补层501中同一个地方出现孔洞（所述第一孔洞105和所述第二孔洞502）的概率非常小。That is, in the process of disposing the first transparent electrode layer 104 and the repair layer 501, the first hole 105 in the first transparent electrode layer 104 is covered (patched) by the repair layer 501, The second hole 502 in the repair layer 501 is blocked (patched) by the first transparent electrode layer 104, and a hole is formed in the same place in the first transparent electrode layer 104 and the repair layer 501 (the first hole The probability of 105 and the second hole 502) is very small.
因此，上述技术方案可以有效避免 ITO （所述第一透明电极）膜破造成的电化学反应，从而可以使得良率的提升率可达到30%。也就是说，上述技术方案可以有效避免所述薄膜晶体管阵列基板的所述第二金属层103中出现断线缺陷，有利于确保所述薄膜晶体管阵列基板所对应的显示面板的显示质量。Therefore, the above technical solution can effectively avoid ITO (The first transparent electrode) the electrochemical reaction caused by the membrane breakage, so that the rate of improvement of the yield can reach 30%. That is to say, the above technical solution can effectively avoid the occurrence of wire breakage defects in the second metal layer 103 of the thin film transistor array substrate, and is advantageous for ensuring the display quality of the display panel corresponding to the thin film transistor array substrate.
尽管已经相对于一个或多个实现方式示出并描述了本发明，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本发明包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。Although the present invention has been shown and described with respect to the embodiments of the invention, The invention includes all such modifications and variations, and is only limited by the scope of the appended claims. With particular regard to the various functions performed by the above-described components, the terms used to describe such components are intended to correspond to any component that performs the specified function of the component (eg, which is functionally equivalent) (unless otherwise indicated) Even if it is structurally not identical to the disclosed structure for performing the functions in the exemplary implementation of the present specification shown herein. Moreover, although specific features of the specification have been disclosed with respect to only one of several implementations, such features may be combined with one or more other implementations as may be desired and advantageous for a given or particular application. Other feature combinations. Furthermore, the terms "comprising," "having," "having," or "include" or "comprising" are used in the particular embodiments or claims, and such terms are intended to be encompassed in a manner similar to the term "comprising."
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。In the above, the present invention has been disclosed in the above preferred embodiments, but the preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various modifications without departing from the spirit and scope of the invention. The invention is modified and retouched, and the scope of the invention is defined by the scope defined by the claims.

Claims (20)

  1. 一种显示面板，所述显示面板包括：A display panel, the display panel comprising:
    彩色滤光片阵列基板；Color filter array substrate;
    液晶层；以及Liquid crystal layer;
    薄膜晶体管阵列基板；Thin film transistor array substrate;
    所述薄膜晶体管阵列基板包括：The thin film transistor array substrate includes:
    基板；Substrate
    第一金属层，所述第一金属层设置于所述基板上；a first metal layer, the first metal layer is disposed on the substrate;
    第一绝缘层，所述第一绝缘层设置于所述基板和所述第一金属层上；a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer;
    半导体层，所述半导体层设置于所述第一绝缘层上；a semiconductor layer, the semiconductor layer being disposed on the first insulating layer;
    第二金属层，所述第二金属层设置于所述第一绝缘层上；a second metal layer, the second metal layer is disposed on the first insulating layer;
    第一透明电极层，所述第一透明电极设置于所述第一绝缘层和所述第二金属层上；a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer;
    第二绝缘层，所述第二绝缘层设置于所述第一透明电极层上；以及a second insulating layer, the second insulating layer is disposed on the first transparent electrode layer;
    第二透明电极层，所述第二透明电极层设置于所述第二绝缘层上；a second transparent electrode layer, the second transparent electrode layer is disposed on the second insulating layer;
    其中，所述薄膜晶体管阵列基板还包括：The thin film transistor array substrate further includes:
    修补层，所述修补层设置于所述第一透明电极层上，并且，所述修补层设置于所述第一透明电极和所述第二绝缘层之间，所述修补层用于修补所述第一透明电极层上位于所述第二金属层处的第一孔洞，以防止所述第二金属层在所述第一孔洞处受损；a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer, and the repair layer is used for repairing a first hole at the second metal layer on the first transparent electrode layer to prevent the second metal layer from being damaged at the first hole;
    所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层、所述修补层、所述第二绝缘层和所述第二透明电极层是依次形成的；The first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the repair layer, the second insulating layer, and the second Transparent electrode layers are formed in sequence;
    所述修补层的材料为透明金属、透明绝缘材料中的任意一者。The material of the repair layer is any one of a transparent metal and a transparent insulating material.
  2. 根据权利要求1所述的显示面板，其中，所述第一透明电极层用于修补所述修补层上位于所述第二金属层处的第二孔洞，以防止所述第二金属层在所述第二孔洞处受损；The display panel according to claim 1, wherein the first transparent electrode layer is used for repairing a second hole on the repair layer at the second metal layer to prevent the second metal layer from being The second hole is damaged;
    所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的；The first hole is formed by the action of a corrosive substance or a developing solution after the first transparent electrode layer is formed;
    所述修补层的材料跟所述第一透明电极层的材料相同。The material of the repair layer is the same as the material of the first transparent electrode layer.
  3. 一种显示面板，所述显示面板包括：A display panel, the display panel comprising:
    彩色滤光片阵列基板；Color filter array substrate;
    液晶层；以及Liquid crystal layer;
    薄膜晶体管阵列基板；Thin film transistor array substrate;
    所述薄膜晶体管阵列基板包括：The thin film transistor array substrate includes:
    基板；Substrate
    第一金属层，所述第一金属层设置于所述基板上；a first metal layer, the first metal layer is disposed on the substrate;
    第一绝缘层，所述第一绝缘层设置于所述基板和所述第一金属层上；a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer;
    半导体层，所述半导体层设置于所述第一绝缘层上；a semiconductor layer, the semiconductor layer being disposed on the first insulating layer;
    第二金属层，所述第二金属层设置于所述第一绝缘层上；a second metal layer, the second metal layer is disposed on the first insulating layer;
    第一透明电极层，所述第一透明电极设置于所述第一绝缘层和所述第二金属层上；a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer;
    第二绝缘层，所述第二绝缘层设置于所述第一透明电极层上；以及a second insulating layer, the second insulating layer is disposed on the first transparent electrode layer;
    第二透明电极层，所述第二透明电极层设置于所述第二绝缘层上；a second transparent electrode layer, the second transparent electrode layer is disposed on the second insulating layer;
    其中，所述薄膜晶体管阵列基板还包括：The thin film transistor array substrate further includes:
    修补层，所述修补层设置于所述第一透明电极层上，并且，所述修补层设置于所述第一透明电极和所述第二绝缘层之间。a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer.
  4. 根据权利要求3所述的显示面板，其中，所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层、所述修补层、所述第二绝缘层和所述第二透明电极层是依次形成的。The display panel according to claim 3, wherein the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, and the repair layer The second insulating layer and the second transparent electrode layer are sequentially formed.
  5. 根据权利要求3所述的显示面板，其中，所述修补层用于修补所述第一透明电极层上位于所述第二金属层处的第一孔洞，以防止所述第二金属层在所述第一孔洞处受损。The display panel according to claim 3, wherein the repair layer is used to repair a first hole on the first transparent electrode layer at the second metal layer to prevent the second metal layer from being The first hole is damaged.
  6. 根据权利要求5所述的显示面板，其中，所述第一透明电极层用于修补所述修补层上位于所述第二金属层处的第二孔洞，以防止所述第二金属层在所述第二孔洞处受损。The display panel according to claim 5, wherein the first transparent electrode layer is used for repairing a second hole on the repair layer at the second metal layer to prevent the second metal layer from being The second hole is damaged.
  7. 根据权利要求5所述的显示面板，其中，所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的。The display panel according to claim 5, wherein the first hole is formed by a corrosive substance or a developing solution after the first transparent electrode layer is formed.
  8. 根据权利要求3所述的显示面板，其中，所述修补层的材料为透明金属、透明绝缘材料中的任意一者。The display panel according to claim 3, wherein the material of the repair layer is any one of a transparent metal and a transparent insulating material.
  9. 根据权利要求8所述的显示面板，其中，所述修补层的材料跟所述第一透明电极层的材料相同。The display panel according to claim 8, wherein the material of the repair layer is the same as the material of the first transparent electrode layer.
  10. 一种薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：A thin film transistor array substrate, the thin film transistor array substrate comprising:
    基板；Substrate
    第一金属层，所述第一金属层设置于所述基板上；a first metal layer, the first metal layer is disposed on the substrate;
    第一绝缘层，所述第一绝缘层设置于所述基板和所述第一金属层上；a first insulating layer, the first insulating layer is disposed on the substrate and the first metal layer;
    半导体层，所述半导体层设置于所述第一绝缘层上；a semiconductor layer, the semiconductor layer being disposed on the first insulating layer;
    第二金属层，所述第二金属层设置于所述第一绝缘层上；a second metal layer, the second metal layer is disposed on the first insulating layer;
    第一透明电极层，所述第一透明电极设置于所述第一绝缘层和所述第二金属层上；a first transparent electrode layer, the first transparent electrode is disposed on the first insulating layer and the second metal layer;
    第二绝缘层，所述第二绝缘层设置于所述第一透明电极层上；以及a second insulating layer, the second insulating layer is disposed on the first transparent electrode layer;
    第二透明电极层，所述第二透明电极层设置于所述第二绝缘层上；a second transparent electrode layer, the second transparent electrode layer is disposed on the second insulating layer;
    其中，所述薄膜晶体管阵列基板还包括：The thin film transistor array substrate further includes:
    修补层，所述修补层设置于所述第一透明电极层上，并且，所述修补层设置于所述第一透明电极和所述第二绝缘层之间。a repair layer disposed on the first transparent electrode layer, and the repair layer is disposed between the first transparent electrode and the second insulating layer.
  11. 根据权利要求10所述的薄膜晶体管阵列基板，其中，所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层、所述修补层、所述第二绝缘层和所述第二透明电极层是依次形成的。The thin film transistor array substrate according to claim 10, wherein the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, the first transparent electrode layer, the The repair layer, the second insulating layer, and the second transparent electrode layer are sequentially formed.
  12. 根据权利要求11所述的薄膜晶体管阵列基板，其中，所述修补层用于修补所述第一透明电极层上位于所述第二金属层处的第一孔洞，以防止所述第二金属层在所述第一孔洞处受损。The thin film transistor array substrate according to claim 11, wherein the repair layer is used to repair a first hole at the second metal layer on the first transparent electrode layer to prevent the second metal layer Damaged at the first hole.
  13. 根据权利要求12所述的薄膜晶体管阵列基板，其中，所述第一透明电极层用于修补所述修补层上位于所述第二金属层处的第二孔洞，以防止所述第二金属层在所述第二孔洞处受损。The thin film transistor array substrate according to claim 12, wherein the first transparent electrode layer is used to repair a second hole on the repair layer at the second metal layer to prevent the second metal layer Damaged at the second hole.
  14. 根据权利要求12所述的薄膜晶体管阵列基板，其中，所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的。The thin film transistor array substrate according to claim 12, wherein the first hole is formed by the corrosive substance or the developer due to the first transparent electrode layer after the first transparent electrode layer is formed. of.
  15. 根据权利要求10所述的薄膜晶体管阵列基板，其中，所述修补层的材料为透明金属、透明绝缘材料中的任意一者。The thin film transistor array substrate according to claim 10, wherein the material of the repair layer is any one of a transparent metal and a transparent insulating material.
  16. 根据权利要求15所述的薄膜晶体管阵列基板，其中，所述修补层的材料跟所述第一透明电极层的材料相同。The thin film transistor array substrate according to claim 15, wherein a material of the repair layer is the same as a material of the first transparent electrode layer.
  17. 一种如权利要求10所述的薄膜晶体管阵列基板的制作方法，其中，所述方法包括以下步骤：A method of fabricating a thin film transistor array substrate according to claim 10, wherein the method comprises the steps of:
    A、在所述基板上依次形成所述第一金属层、所述第一绝缘层、所述半导体层、所述第二金属层、所述第一透明电极层；A. sequentially forming the first metal layer, the first insulating layer, the semiconductor layer, the second metal layer, and the first transparent electrode layer on the substrate;
    B、在所述第一透明电极层上设置所述修补层，以利用所述修补层修补所述第一透明电极层上位于所述第二金属层处的第一孔洞；B. The repair layer is disposed on the first transparent electrode layer to repair the first hole on the first transparent electrode layer at the second metal layer by using the repair layer;
    C、在所述修补层上依次设置所述第二绝缘层和所述第二透明电极层。C. The second insulating layer and the second transparent electrode layer are sequentially disposed on the repair layer.
  18. 根据权利要求17所述的薄膜晶体管阵列基板的制作方法，其中，所述修补层的材料为透明金属、透明绝缘材料中的任意一者。The method of fabricating a thin film transistor array substrate according to claim 17, wherein the material of the repair layer is any one of a transparent metal and a transparent insulating material.
  19. 根据权利要求18所述的薄膜晶体管阵列基板的制作方法，其中，所述修补层的材料跟所述第一透明电极层的材料相同。The method of fabricating a thin film transistor array substrate according to claim 18, wherein the material of the repair layer is the same as the material of the first transparent electrode layer.
  20. 根据权利要求17所述的薄膜晶体管阵列基板的制作方法，其中，所述第一孔洞是在形成所述第一透明电极层后，因所述第一透明电极层受到腐蚀性物质或显影液的作用而形成的。The method of fabricating a thin film transistor array substrate according to claim 17, wherein the first hole is a corrosive substance or a developer after the first transparent electrode layer is formed after the first transparent electrode layer is formed Formed by action.
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