WO2016202919A1 - Optoelectronic component - Google Patents

Optoelectronic component Download PDF

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Publication number
WO2016202919A1
WO2016202919A1 PCT/EP2016/063876 EP2016063876W WO2016202919A1 WO 2016202919 A1 WO2016202919 A1 WO 2016202919A1 EP 2016063876 W EP2016063876 W EP 2016063876W WO 2016202919 A1 WO2016202919 A1 WO 2016202919A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
optoelectronic
semiconductor chip
lead frame
optoelectronic component
Prior art date
Application number
PCT/EP2016/063876
Other languages
German (de)
French (fr)
Inventor
Harald Jaeger
Fabian Eigenmann
Tamas Lamfalusi
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2016202919A1 publication Critical patent/WO2016202919A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface

Definitions

  • the present invention relates to an optoelectronic component according to claim 1.
  • optoelectronic components for example light-emitting diode components
  • housings which comprise a carrier which has conductor frame sections embedded in a molding material.
  • an optoelectronic semiconductor chip is arranged on one of the metallized leadframe sections of the carrier.
  • An object of the present invention is to provide an optoelectronic device. This object is achieved by an optoelectronic component with the Merkma ⁇ len of claim 1.
  • An optoelectronic component comprising a carrier and a disposed on a top surface of the carrier optoelekt ⁇ tronic semiconductor chip.
  • the carrier has a first conductor frame section embedded in a molding material. An upper surface of the first leadframe section terminates flush with the mold material at an upper surface of the support.
  • the optoelectronic semiconductor chip is partially arranged on the upper side of the ⁇ first lead frame portion and partly on the shaped material.
  • the optoelectronic semiconductor chip in this optoelectronic component is partially arranged on the molding material of the carrier, it is possible to form the carrier of the optoelectronic component with very small lateral dimensions. This enables a cost-effective production of the optoelectronic component.
  • the optoelectronic component can be advantageously used in fields of application with limited available space.
  • a rear side of the optoelectronic semiconductor chip facing the upper side of the carrier is electrically insulating.
  • this prevents an electrical short circuit between the optoelectronic semiconductor chip and the first leadframe section of the support of the optoelectronic component .
  • the optoelectronic semiconductor chip is designed as a sapphire chip or as a thin-film chip.
  • the optoelectronic semiconductor chip through a bonding wire is electrically conductively connected to the first lead frame portion ver ⁇ prevented.
  • an electrical contact of the opto-electronic ⁇ semiconductor chip over the first conductive frame section of the support of the optoelectronic component is he ⁇ enables the optoelectronic device characterized.
  • the carrier has a second leadframe section embedded in the molding material.
  • the optoelectronic ⁇ African semiconductor chip is electrically connected via a bonding wire with the second lead frame section.
  • the optoelectronic semiconductor chip is fastened with an adhesive to the upper side of the carrier.
  • the optoelectronic semiconductor chip is fastened with an adhesive to the upper side of the carrier.
  • the adhesive has a silicone and / or an epoxide.
  • the adhesive is characterized inexpensively obtained ⁇ Lich, easy to use and has favorable mechanical properties ⁇ properties on.
  • the adhesive has an embedded filler.
  • the adhesive may thus have a particularly high ther ⁇ mix conductivity, thereby providing an efficient dissipation of the operation of the optoelectronic component is made possible in the optoelectronic semiconductor chip waste heat.
  • the molding material comprises a silicone and / or an epoxide.
  • the molding material is thus available inexpensively, can be processed easily and inexpensively and has favorable mechanical properties.
  • the molding material has an embedded filler.
  • the molding material may thereby have a particular ⁇ DERS high thermal conductivity, whereby a particularly effective dissipation of the operation of the optoelectronic component ⁇ rule in the optoelectronic semiconductor chip waste heat is facilitated by the support of the optoelectronic component.
  • the optoelectronic component has a further optoelectronic semiconductor chip, which is arranged on the upper side of the carrier. Before ⁇ geous enough, the optoelectronic device can thereby have a particularly high performance. Due to the common arrangement of the optoelectronic semiconductor chip and the Wei ⁇ direct optoelectronic semiconductor chip on the top of the carrier, the optoelectronic component has be ⁇ particularly compact external dimensions.
  • the first lead frame portion opposite to one of the top of the carrier underside of the carrier is ENTRANCE ⁇ Lich.
  • the part of the first leadframe section which is accessible on the underside of the support can serve for the electrical contacting of the optoelectronic component.
  • the optoelectronic component may be suitable for example for surface mounting by the fact particular example ⁇ example for surface mounting by means Wiederaufschmelzlö ⁇ th (reflow soldering).
  • FIG. 1 shows a plan view of a carrier of an optoelectronic component.
  • Fig. 2 is a sectional side view of the carrier
  • Figure 3 is a plan view of a carrier comprehensive ⁇ opto electronic device.
  • Fig. 4 is a sectional side view of the optoelectronic device.
  • Fig. 1 shows a schematic plan view of a top surface 101 of a carrier 100, which is provided for the production of an opto-electro ⁇ African component.
  • Fig. 2 shows a schematic ⁇ side sectional view of the carrier 100.
  • the carrier 100 has a first leadframe section 210, a second leadframe section 210 Lead frame section 220 and a third autismrahmenab ⁇ section 230.
  • the first conductor frame portion 210, the second lead frame portion 220 and the third lead frame ⁇ portion 230 are formed by portions of a common managerial terrahmens 200 and are physically separated by formed in the lead frame 200 openings from one another and electrically insulated from each other. It is possible to form the carrier 100 with fewer or with more than three Porterrahmenabschnit ⁇ th 210, 220, 230.
  • the lead frame 200 is a thin sheet with a top
  • the conductor frame sections 210, 220, 230 separate from each other openings extend between the top 201 and the bottom 202 through the Leiterrah ⁇ men 200.
  • the lead frame 200 may have on its upper side 201 and / or on its underside 202 recesses or depressions varying the thickness of the lead frame 200 across its lateral extent.
  • Openings and depressions of the leadframe 200 may have been applied, for example, by means of an etching process.
  • the lead frame 200 comprises an electrically conductive material, such as a metal.
  • the lead frame 200 may include on its upper surface 201 and / or on its underside 202 metal ⁇ metallic coatings which are intended to treble an optical reflectivity of the lead frame 200 to he ⁇ to improve a contactability of the lead frame 200 by means of a bonding wire or a contactability of the lead frame 200 ⁇ fibers to verbes means of a soldering process.
  • the lead frame portions 210, 220, 230 of the lead frame 200 are embedded in a molded body 300. Together bil ⁇ the molded body 300 and the embedded into the mold body 300 lead frame portions 210, 220, 230 the carrier 100th
  • the molded body 300 has a molding material 310.
  • the molding material 310 may be, for example, a silicone and / or a Epoxy have.
  • the molding material 310 may also include a turned ⁇ embedded filler which is intended to increase the thermal conductivity of the molded body 300th
  • the molded body 300 has been formed by forming the lead frame sections 210, 220, 230 of the lead frame 200 with the Formma ⁇ material 310.
  • the molded body 300 may have been produced by transfer molding or by injection molding.
  • the upper side 201 of the leadframe sections 210, 220, 230 of the leadframe 200 is at least partially not covered by the molding material 310 of the molded article 300, but instead
  • the underside 202 of the lead frame sections 210, 220, 230 of the lead frame 200 is at least partially unrestrained by the molding material 310 of the molding 300 covered, but includes flush with a bottom 302 of the molding 300 from.
  • the underside 202 of the Porterrahmenab ⁇ sections 210, 220, 230 of the lead frame 200 and the lower ⁇ side 302 of the molding 300 a bottom 102 of the carrier 100th
  • the carrier 100 may be manufactured together with a plurality of other similar carriers 100 in a carrier composite.
  • the lead frame 200 includes, besides the first lead frame portion 210, the second lead frame portion 220, and the third lead frame portion 230, a plurality of similar lead frame portions 210, 220, 230.
  • the first lead frame portion 210, the second lead frame portion 220, and the third lead frame portion 230,230 of the lead frame 200 may be a body ⁇ Lich connected together in this case on the other lead frame portions 210, 220,.
  • the extended lead frame 200 is embedded in its entirety in the molding material 310 ⁇ , thereby forming the carrier composite.
  • the carrier composite will be For example, by means of a sawing process, divided into the individual carrier 100, whereby the first lead frame section 210, the second lead frame section 220 and the third Lei ⁇ terrahmenabites 230 physically separated from each other.
  • Fig. 3 shows a schematic plan view of an opto-electro ⁇ African component 10.
  • Fig. 4 shows a schematic ge ⁇ sectioned side view of the optoelectronic component 10.
  • the optoelectronic component 10 can be for example a light-emitting device (LED device).
  • the optoelectronic component 10 comprises the carrier 100 shown in FIGS. 1 and 2 and an optoelectronic semiconductor chip 400.
  • the optoelectronic semiconductor chip 400 is arranged on the upper side 101 of the carrier 100. If the carrier 100 together with a variety of other carriers
  • the optoelectronic semiconductor chip 400 has preferably already been arranged on the top side 101 of the carrier 100 before the carrier composite is cut.
  • the optoelectronic semiconductor chip 400 has a front ⁇ page 401 and a front 401 opposite backside 402.
  • the optoelectronic semiconductor chip 400 may, for example, be a light-emitting diode chip (LED chip).
  • the front side 401 of the optoelectronic semiconductor chip 400 may form a radiation emission surface of the opto ⁇ electronic semiconductor chip 400.
  • the rear side 402 of the optoelectronic semiconductor chip 400 is electrically insulating.
  • the optoelectronic semiconductor chip 400 may be commercialbil ⁇ det example, as a sapphire chip or as thin-film chip.
  • the optoelectronic semiconductor chip 400 is on the
  • Top side 101 of the carrier 100 arranged that the back side 402 of the optoelectronic semiconductor chip 400 of the top
  • the optoelectronic ⁇ African semiconductor chip 400 is partially on the top 201 of the first lead frame section 200 and partially on the upper side 201 of the molding 300.
  • the optoelectronic semiconductor chip 400 is partially arranged on the upper side 201 of the second leadframe section 220. However, this is not absolutely necessary. It would be sufficient to arrange the optoelectronic semiconductor chip 400 partly on the upper side 201 of the first leadframe section 210 and partly on the upper side 301 of the molded body 300.
  • the optoelectronic semiconductor chip 400 is by means of a
  • Adhesive 500 connected to the top 101 of the carrier 100.
  • the adhesive 500 may include, for example, a silicone and / or an epoxy.
  • the adhesive 500 may also include an embedded filler which can be provided for example to a thermal conductivity of the adhesive 500 to be raised stabili ⁇ hen.
  • the optoelectronic semiconductor chip 400 has on its front side 401 a first electrical contact surface 410 and a second electrical contact surface 420.
  • the first elekt ⁇ generic contact surface 410 is electrically conductively connected via a first bonding wire 510 to the first lead frame portion 210 of the carrier 100th
  • the second electrical Kunststoffflä ⁇ surface 420 of the optoelectronic semiconductor chip 400 is electrically conductively connected via a second bonding wire 520 to the leadframe section drit ⁇ th 230th
  • the first electrical contact surface 410 and / or the second electrical contact area 420 of the optoelectronic semiconductor chip 400 with another of the Leiterrahmenab- sections 210, 220 to link 230, as long as the first elekt ⁇ generic contact surface 410 and the second electrical Contact ⁇ surface 420 with different lead frame sections 210, 220, 230 of the carrier 100 are connected.
  • the opto-electro ⁇ African component 10 may be provided for example as a SMD component for surface mounting be, in particular For example, for surface mounting by reflow soldering.
  • the optoelectronic component 10 may have at least one further optoelectronic semiconductor chip, which is arranged together with the optoelectronic semiconductor chip 400 on the top side 101 of the carrier 100.
  • a potting material may be arranged on the upper side 101 of the carrier 100 of the optoelectronic component 10.
  • the optoelectronic semiconductor chip 400 is embedded in the potting material.
  • the potting material may for example comprise a silicone.
  • the molding material may also have embedded wavelength converting particles, which are intended to convert light emitted by the optoelectronic semiconductor chip 400 electromagnetic Strah ⁇ lung at least partially into electromagnetic radiation ei ⁇ ner different wavelength. If the carrier 100 is produced together with further carriers 100 in a carrier assembly, the molding material may be disposed at the top of the Stromver ⁇ bunds before the dicing of the carrier assembly.

Abstract

An optoelectronic component comprises a substrate and an optoelectronic semiconductor chip arranged on an upper face of the substrate. The substrate comprises a first lead frame portion embedded in a moldable material. An upper face of the first lead frame portion is flush with the moldable material on the upper face of the substrate. The optoelectronic semiconductor chip is partly arranged on the upper face of the first lead frame portion and partly on the moldable material.

Description

OPTOELEKTRONISCHES BAUELEMENT  OPTOELECTRONIC COMPONENT
BESCHREIBUNG DESCRIPTION
Die vorliegende Erfindung betrifft ein optoelektronisches Bauelement gemäß Patentanspruch 1. The present invention relates to an optoelectronic component according to claim 1.
Diese Patentanmeldung beansprucht die Priorität der deutschen Patentanmeldung DE 10 2015 109 877.6, deren Offenbarungsge¬ halt hiermit durch Rückbezug aufgenommen wird. This patent application claims the priority of German patent application DE 10 2015 109 877.6, which is dependent Offenbarungsge ¬ hereby incorporated by reference.
Es ist bekannt, optoelektronische Bauelemente, beispielsweise Leuchtdioden-Bauelemente, mit Gehäusen auszubilden, die einen Träger umfassen, der in ein Formmaterial eingebettete Leiter- rahmenabschnitte aufweist. Bei diesen optoelektronischen Bauelementen wird ein optoelektronischer Halbleiterchip auf ei- nem der metallisierten Leiterrahmenabschnitte des Trägers an- geordnet . It is known to form optoelectronic components, for example light-emitting diode components, with housings which comprise a carrier which has conductor frame sections embedded in a molding material. In these optoelectronic components, an optoelectronic semiconductor chip is arranged on one of the metallized leadframe sections of the carrier.
Eine Aufgabe der vorliegenden Erfindung besteht darin, ein optoelektronisches Bauelement bereitzustellen. Diese Aufgabe wird durch ein optoelektronisches Bauelement mit den Merkma¬ len des Anspruchs 1 gelöst. An object of the present invention is to provide an optoelectronic device. This object is achieved by an optoelectronic component with the Merkma ¬ len of claim 1.
Ein optoelektronisches Bauelement umfasst einen Träger und einen auf einer Oberseite des Trägers angeordneten optoelekt¬ ronischen Halbleiterchip. Der Träger weist einen in ein Formmaterial eingebetteten ersten Leiterrahmenabschnitt auf. Eine Oberseite des ersten Leiterrahmenabschnitts schließt an einer Oberseite des Trägers bündig mit dem Formmaterial ab. Der optoelektronische Halbleiterchip ist teilweise auf der Ober¬ seite des ersten Leiterrahmenabschnitts und teilweise auf dem Formmaterial angeordnet. An optoelectronic component comprising a carrier and a disposed on a top surface of the carrier optoelekt ¬ tronic semiconductor chip. The carrier has a first conductor frame section embedded in a molding material. An upper surface of the first leadframe section terminates flush with the mold material at an upper surface of the support. The optoelectronic semiconductor chip is partially arranged on the upper side of the ¬ first lead frame portion and partly on the shaped material.
Dadurch, dass der optoelektronisehe Halbleiterchip bei diesem optoelektronischen Bauelement teilweise auf dem Formmaterial des Trägers angeordnet ist, wird es ermöglicht, den Träger des optoelektronischen Bauelements mit sehr geringen latera- len Abmessungen auszubilden. Dies ermöglicht eine kostengüns- tige Herstellung des optoelektronischen Bauelements. Durch die geringen lateralen Abmessungen des Trägers des optoelektronischen Bauelements kann das optoelektronische Bauelement vorteilhafterweise auch in Anwendungsfeldern mit begrenzt zur Verfügung stehendem Bauraum eingesetzt werden. Because the optoelectronic semiconductor chip in this optoelectronic component is partially arranged on the molding material of the carrier, it is possible to form the carrier of the optoelectronic component with very small lateral dimensions. This enables a cost-effective production of the optoelectronic component. By the small lateral dimensions of the carrier of the optoelectronic component, the optoelectronic component can be advantageously used in fields of application with limited available space.
In einer Ausführungsform des optoelektronischen Bauelements ist eine der Oberseite des Trägers zugewandte Rückseite des optoelektronischen Halbleiterchips elektrisch isolierend. Vorteilhafterweise wird dadurch ein elektrischer Kurzschluss zwischen dem optoelektronischen Halbleiterchip und dem ersten Leiterrahmenabschnitt des Trägers des optoelektronischen Bau¬ elements verhindert. In one embodiment of the optoelectronic component, a rear side of the optoelectronic semiconductor chip facing the upper side of the carrier is electrically insulating. Advantageously, this prevents an electrical short circuit between the optoelectronic semiconductor chip and the first leadframe section of the support of the optoelectronic component .
In einer Ausführungsform des optoelektronischen Bauelements ist der optoelektronische Halbleiterchip als Saphirchip oder als Dünnfilmchip ausgebildet. In one embodiment of the optoelectronic component, the optoelectronic semiconductor chip is designed as a sapphire chip or as a thin-film chip.
In einer Ausführungsform des optoelektronischen Bauelements ist der optoelektronische Halbleiterchip über einen Bonddraht elektrisch leitend mit dem ersten Leiterrahmenabschnitt ver¬ bunden. Vorteilhafterweise wird bei dem optoelektronischen Bauelement dadurch eine elektrische Kontaktierung des opto¬ elektronischen Halbleiterchips über den ersten Leiterrahmenabschnitt des Trägers des optoelektronischen Bauelements er¬ möglicht . In one embodiment of the optoelectronic component, the optoelectronic semiconductor chip through a bonding wire is electrically conductively connected to the first lead frame portion ver ¬ prevented. Advantageously, an electrical contact of the opto-electronic ¬ semiconductor chip over the first conductive frame section of the support of the optoelectronic component is he ¬ enables the optoelectronic device characterized.
In einer Ausführungsform des optoelektronischen Bauelements weist der Träger einen in das Formmaterial eingebetteten zweiten Leiterrahmenabschnitt auf. Dabei ist der optoelektro¬ nische Halbleiterchip über einen Bonddraht elektrisch leitend mit dem zweiten Leiterrahmenabschnitt verbunden. Vorteilhaf¬ terweise wird dadurch eine elektrische Kontaktierung des optoelektronischen Halbleiterchips über den zweiten Leiterrahmenabschnitt des Trägers des optoelektronischen Bauele¬ ments ermöglicht. In one embodiment of the optoelectronic component, the carrier has a second leadframe section embedded in the molding material. In this case, the optoelectronic ¬ African semiconductor chip is electrically connected via a bonding wire with the second lead frame section. Vorteilhaf ¬ ingly thereby allowing electrical contact with the optoelectronic semiconductor chip on the second lead frame portion of the support of the optoelectronic Bauele ¬ management.
In einer Ausführungsform des optoelektronischen Bauelements ist der optoelektronische Halbleiterchip mit einem Kleber an der Oberseite des Trägers befestigt. Vorteilhafterweise er¬ möglicht dies eine einfache, kostengünstige und mechanisch robuste Befestigung des optoelektronischen Halbleiterchips an der Oberseite des Trägers des optoelektronischen Bauelements. In one embodiment of the optoelectronic component, the optoelectronic semiconductor chip is fastened with an adhesive to the upper side of the carrier. Advantageously, it enables ¬ this is a simple, inexpensive and mechanically robust attachment of the optoelectronic semiconductor chip to the upper side of the carrier of the optoelectronic component.
In einer Ausführungsform des optoelektronischen Bauelements weist der Kleber ein Silikon und/oder ein Epoxid auf. Vorteilhafterweise ist der Kleber dadurch kostengünstig erhält¬ lich, einfach anwendbar und weist günstige mechanische Eigen¬ schaften auf. In einer Ausführungsform des optoelektronischen Bauelements weist der Kleber einen eingebetteten Füllstoff auf. Vorteilhafterweise kann der Kleber dadurch eine besonders hohe ther¬ mische Leitfähigkeit aufweisen, wodurch eine wirksame Abfuhr von im Betrieb des optoelektronischen Bauelements in dem optoelektronischen Halbleiterchip anfallender Abwärme ermöglicht wird. In one embodiment of the optoelectronic component, the adhesive has a silicone and / or an epoxide. Advantageously, the adhesive is characterized inexpensively obtained ¬ Lich, easy to use and has favorable mechanical properties ¬ properties on. In one embodiment of the optoelectronic component, the adhesive has an embedded filler. Advantageously, the adhesive may thus have a particularly high ther ¬ mix conductivity, thereby providing an efficient dissipation of the operation of the optoelectronic component is made possible in the optoelectronic semiconductor chip waste heat.
In einer Ausführungsform des optoelektronischen Bauelements weist das Formmaterial ein Silikon und/oder ein Epoxid auf. Vorteilhafterweise ist das Formmaterial dadurch kostengünstig erhältlich, lässt sich einfach und kostengünstig verarbeiten und weist günstige mechanische Eigenschaften auf. In one embodiment of the optoelectronic component, the molding material comprises a silicone and / or an epoxide. Advantageously, the molding material is thus available inexpensively, can be processed easily and inexpensively and has favorable mechanical properties.
In einer Ausführungsform des optoelektronischen Bauelements weist das Formmaterial einen eingebetteten Füllstoff auf.In one embodiment of the optoelectronic component, the molding material has an embedded filler.
Vorteilhafterweise kann das Formmaterial dadurch eine beson¬ ders hohe thermische Leitfähigkeit aufweisen, wodurch eine besonders wirksame Abfuhr von im Betrieb des optoelektroni¬ schen Bauelements in dem optoelektronischen Halbleiterchip anfallende Abwärme über den Träger des optoelektronischen Bauelements ermöglicht wird. Advantageously, the molding material may thereby have a particular ¬ DERS high thermal conductivity, whereby a particularly effective dissipation of the operation of the optoelectronic component ¬ rule in the optoelectronic semiconductor chip waste heat is facilitated by the support of the optoelectronic component.
In einer Ausführungsform des optoelektronischen Bauelements weist dieses einen weiteren optoelektronischen Halbleiterchip auf, der auf der Oberseite des Trägers angeordnet ist. Vor¬ teilhafterweise kann das optoelektronische Bauelement dadurch eine besonders hohe Leistung aufweisen. Durch die gemeinsame Anordnung des optoelektronischen Halbleiterchips und des Wei¬ teren optoelektronischen Halbleiterchips auf der Oberseite des Trägers weist das optoelektronische Bauelement dabei be¬ sonders kompakte äußere Abmessungen auf. In one embodiment of the optoelectronic component, the latter has a further optoelectronic semiconductor chip, which is arranged on the upper side of the carrier. Before ¬ geous enough, the optoelectronic device can thereby have a particularly high performance. Due to the common arrangement of the optoelectronic semiconductor chip and the Wei ¬ direct optoelectronic semiconductor chip on the top of the carrier, the optoelectronic component has be ¬ particularly compact external dimensions.
In einer Ausführungsform des optoelektronischen Bauelements ist der erste Leiterrahmenabschnitt an einer der Oberseite des Trägers gegenüberliegenden Unterseite des Trägers zugäng¬ lich. Dabei kann der an der Unterseite des Trägers zugängliche Teil des ersten Leiterrahmenabschnitts zur elektrischen Kontaktierung des optoelektronischen Bauelements dienen. Das optoelektronische Bauelement kann sich dadurch beispielsweise für eine Oberflächenmontage eignen, insbesondere beispiels¬ weise für eine Oberflächenmontage mittels Wiederaufschmelzlö¬ ten (Reflow-Löten) . Die oben beschriebenen Eigenschaften, Merkmale und Vorteile dieser Erfindung sowie die Art und Weise, wie diese erreicht werden, werden klarer und deutlicher verständlich im Zusammenhang mit der folgenden Beschreibung der Ausführungsbeispiele, die im Zusammenhang mit den Zeichnungen näher erläu- tert werden. Dabei zeigen in jeweils schematisierter Darstellung In one embodiment of the optoelectronic component, the first lead frame portion opposite to one of the top of the carrier underside of the carrier is ENTRANCE ¬ Lich. In this case, the part of the first leadframe section which is accessible on the underside of the support can serve for the electrical contacting of the optoelectronic component. The optoelectronic component may be suitable for example for surface mounting by the fact particular example ¬ example for surface mounting by means Wiederaufschmelzlö ¬ th (reflow soldering). The above-described characteristics, features, and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of the embodiments, which will be described in detail in conjunction with the drawings. In each case show in a schematic representation
Fig. 1 eine Aufsicht auf einen Träger eines optoelektronischen Bauelements; 1 shows a plan view of a carrier of an optoelectronic component.
Fig. 2 eine geschnittene Seitenansicht des Trägers; Fig. 2 is a sectional side view of the carrier;
Fig. 3 eine Aufsicht auf ein den Träger umfassendes opto¬ elektronisches Bauelement; und Figure 3 is a plan view of a carrier comprehensive ¬ opto electronic device. and
Fig. 4 eine geschnittene Seitenansicht des optoelektronischen Bauelements . Fig. 4 is a sectional side view of the optoelectronic device.
Fig. 1 zeigt eine schematische Aufsicht auf eine Oberseite 101 eines Trägers 100, der zur Herstellung eines optoelektro¬ nischen Bauelements vorgesehen ist. Fig. 2 zeigt eine schema¬ tische geschnittene Seitenansicht des Trägers 100. Fig. 1 shows a schematic plan view of a top surface 101 of a carrier 100, which is provided for the production of an opto-electro ¬ African component. Fig. 2 shows a schematic ¬ side sectional view of the carrier 100.
Der Träger 100 weist im in Figuren 1 und 2 dargestellten Bei- spiel einen ersten Leiterrahmenabschnitt 210, einen zweiten Leiterrahmenabschnitt 220 und einen dritten Leiterrahmenab¬ schnitt 230 auf. Der erste Leiterrahmenabschnitt 210, der zweite Leiterrahmenabschnitt 220 und der dritte Leiterrahmen¬ abschnitt 230 werden durch Abschnitte eines gemeinsamen Lei- terrahmens 200 gebildet und sind durch im Leiterrahmen 200 ausgebildete Durchbrüche körperlich voneinander getrennt und elektrisch gegeneinander isoliert. Es ist möglich, den Träger 100 mit weniger oder mit mehr als drei Leiterrahmenabschnit¬ ten 210, 220, 230 auszubilden. In the example illustrated in FIGS. 1 and 2, the carrier 100 has a first leadframe section 210, a second leadframe section 210 Lead frame section 220 and a third Leiterrahmenab ¬ section 230. The first conductor frame portion 210, the second lead frame portion 220 and the third lead frame ¬ portion 230 are formed by portions of a common managerial terrahmens 200 and are physically separated by formed in the lead frame 200 openings from one another and electrically insulated from each other. It is possible to form the carrier 100 with fewer or with more than three Leiterrahmenabschnit ¬ th 210, 220, 230.
Der Leiterrahmen 200 ist als dünnes Blech mit einer OberseiteThe lead frame 200 is a thin sheet with a top
201 und einer der Oberseite 201 gegenüberliegenden Unterseite201 and one of the top 201 opposite bottom
202 ausgebildet. Die die Leiterrahmenabschnitte 210, 220, 230 voneinander trennenden Durchbrüche erstrecken sich zwischen der Oberseite 201 und der Unterseite 202 durch den Leiterrah¬ men 200. Zusätzlich kann der Leiterrahmen 200 an seiner Oberseite 201 und/oder an seiner Unterseite 202 Aussparungen oder Vertiefungen aufweisen, durch die die Dicke des Leiterrahmens 200 über seine laterale Ausdehnung hinweg variiert. Die 202 formed. The conductor frame sections 210, 220, 230 separate from each other openings extend between the top 201 and the bottom 202 through the Leiterrah ¬ men 200. In addition, the lead frame 200 may have on its upper side 201 and / or on its underside 202 recesses or depressions varying the thickness of the lead frame 200 across its lateral extent. The
Durchbrüche und Vertiefungen des Leiterrahmens 200 können beispielsweise mittels eines Ätzprozesses angelegt worden sein . Openings and depressions of the leadframe 200 may have been applied, for example, by means of an etching process.
Der Leiterrahmen 200 weist ein elektrisch leitendes Material auf, beispielsweise ein Metall. Der Leiterrahmen 200 kann an seiner Oberseite 201 und/oder an seiner Unterseite 202 metal¬ lische Beschichtungen aufweisen, die dazu vorgesehen sind, ein optisches Reflexionsvermögen des Leiterrahmens 200 zu er¬ höhen, eine Kontaktierbarkeit des Leiterrahmens 200 mittels eines Bonddrahts zu verbessern oder eine Kontaktierbarkeit des Leiterrahmens 200 mittels eines Lötverfahrens zu verbes¬ sern . The lead frame 200 comprises an electrically conductive material, such as a metal. The lead frame 200 may include on its upper surface 201 and / or on its underside 202 metal ¬ metallic coatings which are intended to treble an optical reflectivity of the lead frame 200 to he ¬ to improve a contactability of the lead frame 200 by means of a bonding wire or a contactability of the lead frame 200 ¬ fibers to verbes means of a soldering process.
Die Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 sind in einen Formkörper 300 eingebettet. Gemeinsam bil¬ den der Formkörper 300 und die in den Formkörper 300 eingebetteten Leiterrahmenabschnitte 210, 220, 230 den Träger 100. The lead frame portions 210, 220, 230 of the lead frame 200 are embedded in a molded body 300. Together bil ¬ the molded body 300 and the embedded into the mold body 300 lead frame portions 210, 220, 230 the carrier 100th
Der Formkörper 300 weist ein Formmaterial 310 auf. Das Form- material 310 kann beispielsweise ein Silikon und/oder ein Epoxid aufweisen. Das Formmaterial 310 kann auch einen einge¬ betteten Füllstoff aufweisen, der dazu vorgesehen ist, die Wärmeleitfähigkeit des Formkörpers 300 zu erhöhen. Der Formkörper 300 ist durch Umformen der Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 mit dem Formma¬ terial 310 ausgebildet worden. Beispielsweise kann der Form¬ körper 300 durch Spritzpressen (Transfer Molding) oder durch Spritzgießen (Injection Molding) hergestellt worden sein. The molded body 300 has a molding material 310. The molding material 310 may be, for example, a silicone and / or a Epoxy have. The molding material 310 may also include a turned ¬ embedded filler which is intended to increase the thermal conductivity of the molded body 300th The molded body 300 has been formed by forming the lead frame sections 210, 220, 230 of the lead frame 200 with the Formma ¬ material 310. For example, the molded body 300 may have been produced by transfer molding or by injection molding.
Die Oberseite 201 der Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 ist zumindest teilweise nicht durch das Formmaterial 310 des Formkörpers 300 bedeckt, sondern The upper side 201 of the leadframe sections 210, 220, 230 of the leadframe 200 is at least partially not covered by the molding material 310 of the molded article 300, but instead
schließt bündig mit einer Oberseite 301 des Formkörpers 300 ab. Gemeinsam bilden die Oberseite 301 des Formkörpers 300 und die Oberseite 201 der Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 die Oberseite 101 des Trägers 100. Auch die Unterseite 202 der Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 ist zumindest teilweise nicht durch das Formmaterial 310 des Formkörpers 300 bedeckt, sondern schließt bündig mit einer Unterseite 302 des Formkörpers 300 ab. Gemeinsam bilden die Unterseite 202 der Leiterrahmenab¬ schnitte 210, 220, 230 des Leiterrahmens 200 und die Unter¬ seite 302 des Formkörpers 300 eine Unterseite 102 des Trägers 100. is flush with a top 301 of the molding 300 from. Together, the upper side 301 of the molded body 300 and the upper side 201 of the lead frame sections 210, 220, 230 of the lead frame 200 form the upper side 101 of the support 100. Also, the underside 202 of the lead frame sections 210, 220, 230 of the lead frame 200 is at least partially unrestrained by the molding material 310 of the molding 300 covered, but includes flush with a bottom 302 of the molding 300 from. Together, the underside 202 of the Leiterrahmenab ¬ sections 210, 220, 230 of the lead frame 200 and the lower ¬ side 302 of the molding 300 a bottom 102 of the carrier 100th
Der Träger 100 kann gemeinsam mit einer Vielzahl weiterer gleichartiger Träger 100 in einem Trägerverbund hergestellt werden. In diesem Fall umfasst der Leiterrahmen 200 neben dem ersten Leiterrahmenabschnitt 210, dem zweiten Leiterrahmenab¬ schnitt 220 und dem dritten Leiterrahmenabschnitt 230 eine Vielzahl gleichartiger weiterer Leiterrahmenabschnitte 210, 220, 230. Der erste Leiterrahmenabschnitt 210, der zweite Leiterrahmenabschnitt 220 und der dritte Leiterrahmenab- schnitt 230 können in diesem Fall über die weiteren Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 körper¬ lich miteinander verbunden sein. Der ausgedehnte Leiterrahmen 200 wird in seiner Gesamtheit in das Formmaterial 310 einge¬ bettet, um hierdurch den Trägerverbund zu bilden. In einem späteren Bearbeitungsschritt wird der Trägerverbund, bei- spielsweise mittels eines Sägeprozesses, in die einzelnen Träger 100 zerteilt, wodurch der erste Leiterrahmenabschnitt 210, der zweite Leiterrahmenabschnitt 220 und der dritte Lei¬ terrahmenabschnitt 230 körperlich voneinander getrennt wer- den . The carrier 100 may be manufactured together with a plurality of other similar carriers 100 in a carrier composite. In this case, the lead frame 200 includes, besides the first lead frame portion 210, the second lead frame portion 220, and the third lead frame portion 230, a plurality of similar lead frame portions 210, 220, 230. The first lead frame portion 210, the second lead frame portion 220, and the third lead frame portion 230,230 of the lead frame 200 may be a body ¬ Lich connected together in this case on the other lead frame portions 210, 220,. The extended lead frame 200 is embedded in its entirety in the molding material 310 ¬ , thereby forming the carrier composite. In a later processing step, the carrier composite will be For example, by means of a sawing process, divided into the individual carrier 100, whereby the first lead frame section 210, the second lead frame section 220 and the third Lei ¬ terrahmenabschnitt 230 physically separated from each other.
Fig. 3 zeigt eine schematische Aufsicht auf ein optoelektro¬ nisches Bauelement 10. Fig. 4 zeigt eine schematische ge¬ schnittene Seitenansicht des optoelektronischen Bauelements 10. Das optoelektronische Bauelement 10 kann beispielsweise ein Leuchtdioden-Bauelement (LED-Bauelement) sein. Fig. 3 shows a schematic plan view of an opto-electro ¬ African component 10. Fig. 4 shows a schematic ge ¬ sectioned side view of the optoelectronic component 10. The optoelectronic component 10 can be for example a light-emitting device (LED device).
Das optoelektronische Bauelement 10 umfasst den in Figuren 1 und 2 gezeigten Träger 100 sowie einen optoelektronischen Halbleiterchip 400. Der optoelektronische Halbleiterchip 400 ist auf der Oberseite 101 des Trägers 100 angeordnet. Falls der Träger 100 gemeinsam mit einer Vielzahl weiterer TrägerThe optoelectronic component 10 comprises the carrier 100 shown in FIGS. 1 and 2 and an optoelectronic semiconductor chip 400. The optoelectronic semiconductor chip 400 is arranged on the upper side 101 of the carrier 100. If the carrier 100 together with a variety of other carriers
100 in einem Trägerverbund hergestellt worden ist, so ist der optoelektronische Halbleiterchip 400 bevorzugt bereits vor dem Zerteilen des Trägerverbunds auf der Oberseite 101 des Trägers 100 angeordnet worden. 100 has been produced in a carrier composite, the optoelectronic semiconductor chip 400 has preferably already been arranged on the top side 101 of the carrier 100 before the carrier composite is cut.
Der optoelektronische Halbleiterchip 400 weist eine Vorder¬ seite 401 und eine der Vorderseite 401 gegenüberliegende Rückseite 402 auf. Der optoelektronische Halbleiterchip 400 kann beispielsweise ein Leuchtdiodenchip (LED-Chip) sein. In diesem Fall kann die Vorderseite 401 des optoelektronischen Halbleiterchips 400 eine Strahlungsemissionsfläche des opto¬ elektronischen Halbleiterchips 400 bilden. Die Rückseite 402 des optoelektronischen Halbleiterchips 400 ist elektrisch isolierend. Der optoelektronische Halbleiterchip 400 kann beispielsweise als Saphirchip oder als Dünnfilmchip ausgebil¬ det sein. Der optoelektronische Halbleiterchip 400 ist derart an derThe optoelectronic semiconductor chip 400 has a front ¬ page 401 and a front 401 opposite backside 402. The optoelectronic semiconductor chip 400 may, for example, be a light-emitting diode chip (LED chip). In this case, the front side 401 of the optoelectronic semiconductor chip 400 may form a radiation emission surface of the opto ¬ electronic semiconductor chip 400. The rear side 402 of the optoelectronic semiconductor chip 400 is electrically insulating. The optoelectronic semiconductor chip 400 may be ausgebil ¬ det example, as a sapphire chip or as thin-film chip. The optoelectronic semiconductor chip 400 is on the
Oberseite 101 des Trägers 100 angeordnet, dass die Rückseite 402 des optoelektronischen Halbleiterchips 400 der OberseiteTop side 101 of the carrier 100 arranged that the back side 402 of the optoelectronic semiconductor chip 400 of the top
101 des Trägers 100 zugewandt ist. Dabei ist der optoelektro¬ nische Halbleiterchip 400 teilweise auf der Oberseite 201 des ersten Leiterrahmenabschnitts 200 und teilweise auf der Ober- seite 201 des Formkörpers 300 angeordnet. Außerdem ist der optoelektronische Halbleiterchip 400 in dem in Figuren 3 und 4 gezeigten Beispiel teilweise auf der Oberseite 201 des zweiten Leiterrahmenabschnitts 220 angeordnet. Dies ist je- doch nicht zwingend erforderlich. Es wäre ausreichend, den optoelektronischen Halbleiterchip 400 teilweise auf der Oberseite 201 des ersten Leiterrahmenabschnitts 210 und teilweise auf der Oberseite 301 des Formkörpers 300 anzuordnen. Der optoelektronische Halbleiterchip 400 ist mittels eines101 of the carrier 100 faces. In this case, the optoelectronic ¬ African semiconductor chip 400 is partially on the top 201 of the first lead frame section 200 and partially on the upper side 201 of the molding 300. In addition, in the example shown in FIGS. 3 and 4, the optoelectronic semiconductor chip 400 is partially arranged on the upper side 201 of the second leadframe section 220. However, this is not absolutely necessary. It would be sufficient to arrange the optoelectronic semiconductor chip 400 partly on the upper side 201 of the first leadframe section 210 and partly on the upper side 301 of the molded body 300. The optoelectronic semiconductor chip 400 is by means of a
Klebers 500 mit der Oberseite 101 des Trägers 100 verbunden. Der Kleber 500 kann beispielsweise ein Silikon und/oder ein Epoxid aufweisen. Der Kleber 500 kann auch einen eingebetteten Füllstoff aufweisen, der beispielsweise dazu vorgesehen sein kann, eine Wärmeleitfähigkeit des Klebers 500 zu erhö¬ hen . Adhesive 500 connected to the top 101 of the carrier 100. The adhesive 500 may include, for example, a silicone and / or an epoxy. The adhesive 500 may also include an embedded filler which can be provided for example to a thermal conductivity of the adhesive 500 to be raised stabili ¬ hen.
Der optoelektronische Halbleiterchip 400 weist an seiner Vorderseite 401 eine erste elektrische Kontaktfläche 410 und ei- ne zweite elektrische Kontaktfläche 420 auf. Die erste elekt¬ rische Kontaktfläche 410 ist über einen ersten Bonddraht 510 elektrisch leitend mit dem ersten Leiterrahmenabschnitt 210 des Trägers 100 verbunden. Die zweite elektrische Kontaktflä¬ che 420 des optoelektronischen Halbleiterchips 400 ist über einen zweiten Bonddraht 520 elektrisch leitend mit dem drit¬ ten Leiterrahmenabschnitt 230 verbunden. Es wäre aber auch möglich, die erste elektrische Kontaktfläche 410 und/oder die zweite elektrische Kontaktfläche 420 des optoelektronischen Halbleiterchips 400 mit einem anderen der Leiterrahmenab- schnitte 210, 220, 230 zu verbinden, solange die erste elekt¬ rische Kontaktfläche 410 und die zweite elektrische Kontakt¬ fläche 420 mit unterschiedlichen Leiterrahmenabschnitten 210, 220, 230 des Trägers 100 verbunden werden. An der Unterseite 102 des Trägers 100 liegen zumindest Teile der Leiterrahmenabschnitte 210, 220, 230 des Leiterrahmens 200 frei und ermöglichen dadurch eine elektrische Kontaktie- rung des optoelektronischen Bauelements 10. Das optoelektro¬ nische Bauelement 10 kann beispielsweise als SMD-Bauelement für eine Oberflächenmontage vorgesehen sein, insbesondere beispielsweise für eine Oberflächenmontage durch Wiederauf- schmelzlöten (Reflow-Löten) . The optoelectronic semiconductor chip 400 has on its front side 401 a first electrical contact surface 410 and a second electrical contact surface 420. The first elekt ¬ generic contact surface 410 is electrically conductively connected via a first bonding wire 510 to the first lead frame portion 210 of the carrier 100th The second electrical Kontaktflä ¬ surface 420 of the optoelectronic semiconductor chip 400 is electrically conductively connected via a second bonding wire 520 to the leadframe section drit ¬ th 230th However, it would also be possible, the first electrical contact surface 410 and / or the second electrical contact area 420 of the optoelectronic semiconductor chip 400 with another of the Leiterrahmenab- sections 210, 220 to link 230, as long as the first elekt ¬ generic contact surface 410 and the second electrical Contact ¬ surface 420 with different lead frame sections 210, 220, 230 of the carrier 100 are connected. Lie at the bottom 102 of the carrier 100 at least parts of the lead frame portions 210, 220, 230 of the lead frame 200 free and thereby enable an electrical contacting of the optoelectronic component 10. The opto-electro ¬ African component 10 may be provided for example as a SMD component for surface mounting be, in particular For example, for surface mounting by reflow soldering.
Das optoelektronische Bauelement 10 kann neben dem optoelekt- ronischen Halbleiterchip 400 mindestens einen weiteren optoelektronischen Halbleiterchip aufweisen, der gemeinsam mit dem optoelektronischen Halbleiterchip 400 an der Oberseite 101 des Trägers 100 angeordnet ist. In addition to the optoelectronic semiconductor chip 400, the optoelectronic component 10 may have at least one further optoelectronic semiconductor chip, which is arranged together with the optoelectronic semiconductor chip 400 on the top side 101 of the carrier 100.
An der Oberseite 101 des Trägers 100 des optoelektronischen Bauelements 10 kann ein Vergussmaterial angeordnet sein. In diesem Fall ist der optoelektronische Halbleiterchip 400 in das Vergussmaterial eingebettet. Das Vergussmaterial kann beispielsweise ein Silikon aufweisen. Das Vergussmaterial kann auch eingebettete wellenlängenkonvertierende Partikel aufweisen, die dazu vorgesehen sind, von dem optoelektronischen Halbleiterchip 400 emittierte elektromagnetische Strah¬ lung zumindest teilweise in elektromagnetische Strahlung ei¬ ner anderen Wellenlänge zu konvertieren. Falls der Träger 100 gemeinsam mit weiteren Trägern 100 in einem Trägerverbund hergestellt wird, so kann das Vergussmaterial bereits vor dem Zerteilen des Trägerverbunds an der Oberseite des Trägerver¬ bunds angeordnet werden. Die Erfindung wurde anhand der bevorzugten Ausführungsbei¬ spiele näher illustriert und beschrieben. Dennoch ist die Erfindung nicht auf die offenbarten Beispiele eingeschränkt. Vielmehr können hieraus andere Variationen vom Fachmann abgeleitet werden, ohne den Schutzumfang der Erfindung zu verlas- sen. On the upper side 101 of the carrier 100 of the optoelectronic component 10, a potting material may be arranged. In this case, the optoelectronic semiconductor chip 400 is embedded in the potting material. The potting material may for example comprise a silicone. The molding material may also have embedded wavelength converting particles, which are intended to convert light emitted by the optoelectronic semiconductor chip 400 electromagnetic Strah ¬ lung at least partially into electromagnetic radiation ei ¬ ner different wavelength. If the carrier 100 is produced together with further carriers 100 in a carrier assembly, the molding material may be disposed at the top of the Trägerver ¬ bunds before the dicing of the carrier assembly. The invention has been further illustrated and described with reference to the preferred Ausführungsbei ¬ games. However, the invention is not limited to the disclosed examples. Rather, other variations may be deduced therefrom by those skilled in the art without departing from the scope of the invention.
BEZUGSZEICHENLISTE optoelektronisches Bauelement 100 Träger REFERENCE LIST Optoelectronic component 100 Carrier
101 Oberseite  101 top
102 Unterseite  102 bottom
200 Leiterrahmen 200 lead frame
201 Oberseite 201 top
202 Unterseite  202 bottom
210 erster Leiterrahmenabschnitt  210 first ladder frame section
220 zweiter Leiterrahmenabschnitt 220 second ladder frame section
230 dritter Leiterrahmenabschnitt 230 third ladder frame section
300 Formkörper 300 moldings
301 Oberseite  301 top
302 Unterseite  302 bottom
310 Formmaterial 310 molding material
400 optoelektronischer Halbleiterchip400 optoelectronic semiconductor chip
401 Vorderseite 401 front side
402 Rückseite  402 back side
410 erste elektrische Kontaktfläche 420 zweite elektrische Kontaktfläche  410 first electrical contact surface 420 second electrical contact surface
500 Kleber 500 adhesives
510 erster Bonddraht  510 first bonding wire
520 zweiter Bonddraht  520 second bonding wire

Claims

PATENTA S PRÜCHE PATENTA'S TEST
Optoelektronisches Bauelement (10) Optoelectronic component (10)
mit einem Träger (100) und einem auf einer Oberseite (101) des Trägers (100) angeordneten optoelektronischen Halbleiterchip (400), with a carrier (100) and an optoelectronic semiconductor chip (400) arranged on an upper side (101) of the carrier (100),
wobei der Träger (100) einen in ein Formmaterial (310) eingebetteten ersten Leiterrahmenabschnitt (210) auf¬ weist, wherein the carrier (100) comprises in a molding material (310) embedded first lead frame portion (210) has ¬,
wobei eine Oberseite (201) des ersten Leiterrahmenab¬ schnitts (210) an der Oberseite (101) des Trägers (100) bündig mit dem Formmaterial (310) abschließt, wherein an upper side (201) of the first Leiterrahmenab ¬ section (210) at the top (101) of the carrier (100) is flush with the molding material (310),
wobei der optoelektronische Halbleiterchip (400) teilwei se auf der Oberseite (201) des ersten Leiterrahmenab¬ schnitts (210) und teilweise auf dem Formmaterial (310) angeordnet ist. wherein the optoelectronic semiconductor chip (400) is partially arranged on the upper side (201) of the first Leiterrahmenab ¬ section (210) and partially on the molding material (310).
Optoelektronisches Bauelement (10) gemäß Anspruch 1, wobei eine der Oberseite (101) des Trägers (100) zuge¬ wandte Rückseite (402) des optoelektronischen Halbleiter chips (400) elektrisch isolierend ist. Optoelectronic component (10) according to claim 1, wherein one of the top side (101) of the carrier (100) zuge¬ facing back (402) of the optoelectronic semiconductor chip (400) is electrically insulating.
Optoelektronisches Bauelement (10) gemäß Anspruch 2, wobei der optoelektronische Halbleiterchip (400) als Sa¬ phirchip oder als Dünnfilmchip ausgebildet ist. Optoelectronic component (10) according to claim 2, wherein the optoelectronic semiconductor chip (400) is formed as a Sa ¬ phirchip or as a thin-film chip.
Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, Optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei der optoelektronische Halbleiterchip (400) über ei nen Bonddraht (510) elektrisch leitend mit dem ersten Leiterrahmenabschnitt (210) verbunden ist. wherein the optoelectronic semiconductor chip (400) via a bonding wire (510) is electrically conductively connected to the first lead frame portion (210).
Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, Optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei der Träger (100) einen in das Formmaterial (310) eingebetteten zweiten Leiterrahmenabschnitt (220) auf¬ weist, wherein the carrier (100) comprises in the molding material (310) embedded in the second lead frame portion (220) has ¬,
wobei der optoelektronische Halbleiterchip (400) über ei nen Bonddraht (520) elektrisch leitend mit dem zweiten Leiterrahmenabschnitt (220) verbunden ist. 6. Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, wherein the optoelectronic semiconductor chip (400) via a bonding wire (520) is electrically connected to the second lead frame portion (220). 6. The optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei der optoelektronische Halbleiterchip (400) mit ei- nem Kleber (500) an der Oberseite (101) des Trägers (100) befestigt ist.  wherein the optoelectronic semiconductor chip (400) is attached to the top side (101) of the carrier (100) with an adhesive (500).
7. Optoelektronisches Bauelement (10) gemäß Anspruch 6, 7. Optoelectronic component (10) according to claim 6,
wobei der Kleber (500) ein Silikon und/oder ein Epoxid aufweist.  wherein the adhesive (500) comprises a silicone and / or an epoxy.
8. Optoelektronisches Bauelement (10) gemäß einem der An¬ sprüche 6 und 7, 8. Optoelectronic component (10) according to one of the claims ¬ 6 and 7,
wobei der Kleber (500) einen eingebetteten Füllstoff auf- weist.  wherein the adhesive (500) comprises an embedded filler.
9. Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, 9. The optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei das Formmaterial (310) ein Silikon und/oder ein Epoxid aufweist.  wherein the molding material (310) comprises a silicone and / or an epoxy.
10. Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, 10. The optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei das Formmaterial (310) einen eingebetteten Füll- Stoff aufweist.  wherein the molding material (310) comprises an embedded filler.
11. Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, 11. The optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei das optoelektronische Bauelement (10) einen weite- ren optoelektronischen Halbleiterchip (400) aufweist, der auf der Oberseite (101) des Trägers (100) angeordnet ist.  wherein the optoelectronic component (10) has a further optoelectronic semiconductor chip (400) which is arranged on the upper side (101) of the carrier (100).
12. Optoelektronisches Bauelement (10) gemäß einem der vor¬ hergehenden Ansprüche, 12. The optoelectronic component (10) according to one of the reciprocating before ¬ claims,
wobei der erste Leiterrahmenabschnitt (210) an einer der wherein the first lead frame portion (210) on one of
Oberseite (101) des Trägers (100) gegenüberliegenden Un¬ terseite (102) des Trägers (100) zugänglich ist. Top (101) of the carrier (100) opposite Un ¬ terseite (102) of the carrier (100) is accessible.
PCT/EP2016/063876 2015-06-19 2016-06-16 Optoelectronic component WO2016202919A1 (en)

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JP3253265B2 (en) * 1997-10-03 2002-02-04 ローム株式会社 Chip type light emitting device
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DE102012212968A1 (en) * 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH ELECTRICALLY INSULATED ELEMENT
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EP1396891A2 (en) * 2002-09-05 2004-03-10 Nichia Corporation Semiconductor device and optical device using the same
US20120300491A1 (en) * 2011-01-31 2012-11-29 Hussell Christopher P High brightness light emitting diode (led) packages, systems and methods with improved resin filling and high adhesion
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