WO2016198619A1 - Filtre de transmission optique - Google Patents
Filtre de transmission optique Download PDFInfo
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- WO2016198619A1 WO2016198619A1 PCT/EP2016/063325 EP2016063325W WO2016198619A1 WO 2016198619 A1 WO2016198619 A1 WO 2016198619A1 EP 2016063325 W EP2016063325 W EP 2016063325W WO 2016198619 A1 WO2016198619 A1 WO 2016198619A1
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- nanopillars
- optical transmission
- transmission filter
- filter
- filter according
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- 230000003287 optical effect Effects 0.000 title claims abstract description 79
- 230000005540 biological transmission Effects 0.000 title claims abstract description 71
- 239000002061 nanopillar Substances 0.000 claims abstract description 127
- 238000000411 transmission spectrum Methods 0.000 claims abstract description 25
- 230000000737 periodic effect Effects 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims abstract description 6
- 238000010168 coupling process Methods 0.000 claims abstract description 6
- 238000005859 coupling reaction Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 21
- 230000002596 correlated effect Effects 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 10
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910005898 GeSn Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000003086 colorant Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 238000000429 assembly Methods 0.000 description 7
- 230000000712 assembly Effects 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 238000001127 nanoimprint lithography Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001749 colloidal lithography Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000329 molecular dynamics simulation Methods 0.000 description 1
- 238000000255 optical extinction spectrum Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
Definitions
- the present invention relates to an optical transmission filter comprising a plurality of nanopillars according to the preamble of claim 1 . It also relates to a display and an image sensor device comprising such a filter.
- US 2010/091225 discloses an optical transmission filter in which periodically arranged nano-sized holes are used to realise a photonic crystal effect.
- US 201 1 /102716 discloses a colour filter relying on a surface plasmon effect achieved by means of an arrangement of nano- sized holes in a metal film.
- US 201 1 /309237A1 discloses a colour filter comprising periodic arrays of Si nanowires, in which the optical properties of the colour filter are based on diameter dependent absorption properties of individual nanowires.
- US 2014049812A1 discloses a spectral filter relying on a surface Plasmon effect achieved by means of a periodic arrangement of combined dielectric and metallic nanostructures.
- WO 2014028380A2 discloses a multispectral imaging device comprising periodic arrays of Si nanowires, which makes use of the diameter dependent absorption properties of individual nanowires.
- the above mentioned nanostructure based colour filters are basically reflection type filters, band rejection type filters or band pass transmission filters.
- band rejection type filters requires stacking of several different filters in order to transmit only one colour and such filters are therefore generally not used in commercial image sensors and displays.
- Band pass transmission filters transmits only one colour.
- the colour filter characteristics are dependent i) on incidence angle and ii) on polarisation orientation of incident light.
- the optical transmission is low, and light has a tendency to spread beyond individual pixels. It is therefore desirable to develop nanostructure based band pass transmission colour filters in which these drawbacks are reduced.
- Another objective is to provide an optical transmission filter which is suitable for high resolution applications.
- Yet another objective is to provide an optical transmission filter which is operable at relatively high temperatures and which is UV light resistant.
- At least the primary objective is achieved by means of the initially defined optical transmission filter, which is characterised in that a relation between said minimum distance P between neighbouring nanopillars and said average equivalent diameter D of the nanopillars is such that a transmission spectrum of the optical transmission filter is dominated by effects arising from optical coupling between the nanopillars, and in that the nanopillars are arranged in a non-periodic pattern. Apart from effects arising from optical coupling between the nanopillars, resonance effects depending on the diameter of the nanopillars and other properties of the nanopillars influence the transmission spectrum.
- an aperiodic pattern i.e. a pattern having neither short term order nor long term order, such as an aperiodic pattern or a correlated disordered pattern, or a quasi- periodic pattern, i.e. a pattern having order, but which is not periodic.
- the properties of the optical transmission filter according to the invention thus do not rely solely on the optical properties of individual nanopillars, but also, and predominantly, on the optical coupling effects arising due to interaction between the nanopillars. This results in an optical transmission spectrum with two major dips and one major peak in the visible and near- infrared wavelength range. The location of this peak depends on both the average equivalent diameter and the minimum centre to centre distance between the nanopillars.
- the dip is limited by diameter dependent absorption of the nanopillars, and toward the long wavelength range, the dip is limited by absorption arising due to optical coupling between the nanopillars.
- the filter according to the invention can filter white light to generate vivid colours in transmission, ranging from violet to red . It is thereby well suited for use as a colour filter for commercial image sensors and display applications as well as for scientific research.
- the optical transmission filter according to the invention can be made independent of the orientation of polarisation of incoming light, depending on the shape of the nanopillars. It furthermore works for a broad range of incident angles of the incoming light. These properties render the filter very useful for wide viewing and acceptance angle applications such as in displays and cameras.
- the filter according to the invention can be made with a very small number of nanopillars, such as at least 5 nanopillars. Thanks to the small number of nanopillars needed, the filter can be used for small pixel sizes down to 0.75 ⁇ and can thereby provide a very high resolution of e.g. a colour display or a sensor in which the filter is used. Technologically, the filter is possible to adapt for both large displays and small optical detectors. Standard CMOS (complementary metal oxide semiconductor) based fabrication processes can be used to manufacture the filter, and the filter can easily be integrated with CMOS or CCD (charge coupled devices) devices. The scalability of the filter is therefore excellent and it can be used both for small image sensors and for large displays.
- CMOS complementary metal oxide semiconductor
- the optical transmission filter according to the invention is based on the principle of guided light with high directionality. After transmission , the light does not diverge as in the case of diffraction based filters and other filters. This improves the colour purity of the filter and reduces crosstalk issues. Also, non-periodic arrangement of the nanopillar arrays can introduce transverse localisation of light, which can further collimate the transmitted/filtered light to enable higher pixel density with reduced inter pixel cross talk in CMOS or CCD image sensors or display devices.
- Non-periodic patterns can be generated from known mathematical expressions, physical phenomena modelled with proper algorithms or simple biomimicry and can be manufactured using standard fabrication techniques in semiconductor technology.
- the distance P between neighbouring nanopillars is easy to adjust for different optical properties of the filter.
- inventive filter may be incorporated with flexible or bendable devices with ease as the nanopillars are detached from each other and the transmission properties are unchanged under bending or folding . This is useful since flexibility or bendability is becoming an essential aspect of many modern day display devices like e.g. smart phones and laptop screens.
- said relation between the minimum distance P between the nearest neighbour nanopillars and the average equivalent diameter D of the nanopillars can be expressed as P-D ⁇ A pea k, where A pea k is the wavelength in the visible range that corresponds to the highest (peak) intensity of a transmission spectrum from said optical transmission filter. This relation ensures that optical coupling effects occur and that the optical transmission filter obtained is a band pass filter.
- the support medium comprises a substrate on which the nanopillars are arranged.
- the substrate may be either a transparent or near transparent substrate, or a substrate which absorbs light.
- the filter can be used as a stand-alone optical transmission filter which can be transferred onto other devices after fabrication .
- the filter can be used as an integrated optical transmission filter, wherein the substrate forms part of a device in which the filter is used.
- the filter according to this embodiment is versatile and relatively easy to manufacture and handle.
- the nanopillars that are supported on the substrate may be surrounded by a gas atmosphere, such as air, or by a liquid.
- the substrate is made from a material selected from the group of polydimethylsiloxane (PDMS), Si , polycrystalline Si , amorphous Si , InP, Ge, GaP, GaN, GaAs, AIGaAs, Si0 2 , Ti0 2 , indium tin oxide (ITO), ZnO, benzocyclobutene (BCB), poly methyl methacrylate (PMMA), Si3N 4 , and mixtures thereof.
- the material is selected based on the desired properties of the optical transmission filter.
- non-transparent materials such as Si (monocrystalline), polycrystalline Si and amorphous Si are useful in the case of an integrated filter, while as transparent materials such as S 1 O2 etc. are useful for non-integrated filters.
- the support medium comprises a matrix material in which the nanopillars are embedded.
- the matrix material may itself be a supporting material, in which case it is not necessary to also provide a substrate on which the nanopillars are arranged.
- the matrix material and the nanopillars may also be further supported by a substrate as described above.
- the matrix material is selected from the group of PDMS, S1 O2, T1 O2, indium tin oxide (ITO), ZnO, BCB, poly methyl methacrylate (PMMA), Si3N 4 , and mixtures thereof. These are all materials having suitable optical properties, such as a low absorption in the visible wavelength range.
- the nanopillars comprise a material having a significantly higher optical absorption in the visible wavelength range than the support medium. In this way, it is ensured that the optical properties of the assembly of nanopillars dominate the optical properties of the optical transmission filter.
- the support medium is, at least in part, transparent or near transparent to light in the visible wavelength range. This is particularly suitable for a non-integrated filter and for a filter comprising a support medium in the form of a matrix material.
- the nanopillars comprise a material having, in the visible wavelength range, a real part of the refractive index n_NP which is larger than or equal to the real part of the refractive index n_support of the support medium.
- n_NP > n_support + 1 .5.
- the filter support medium comprises both a matrix material and a substrate
- the nanopillars comprise a material having, in the visible wavelength range, a real part of the refractive index n_NP which is larger than or equal to the real part of the refractive index n_substrate of the substrate, which in turn is larger than or equal to the real part of the refractive index n_matrix of the matrix, n_NP > n_substrate > n_matrix.
- the filter support medium comprises both a matrix material and a substrate
- the nanopillars comprise a material having, in the visible wavelength range, a real part of the refractive index n_NP which is smaller than or equal to the real part of the refractive index n_substrate of the substrate, and which is larger than or equal to the real part of refractive index n_matrix of the matrix, n_substrate > n_NP > n_matrix.
- the nanopillars comprise a material having, in the visible wavelength range, a real part of the refractive index n_NP > 1 .75, and an optical absorption coefficient a_NP within the range 10 2 — 0 6 cm 1 .
- the nanopillars comprise a material selected from the group of Si, polycrystalline Si , amorphous Si , InP, GaAs, GaN, AIGaAs, GaP, Ge, GeSn, SiGeSn, and mixtures thereof.
- at least a core of the nanopillars consist mainly or entirely of any of those materials.
- Si based (monocrystalline, polycrystalline and/or amorphous) nanopillars give a filter with long life time, UV light resistance and which is suitable for temperatures up to 400°C.
- the nanopillars comprise a coating, which coating is preferably selected from the group of Si0 2 , Ti0 2 , indium tin oxide (ITO), ZnO, AI2O3, Si3N 4 and mixtures thereof.
- the average thickness of the coating may range from 1 to 100 nm.
- the coating can be used for fine tuning of a refractive index contrast between the nanopillars and the surrounding environment and to tune the transmission spectrum of the optical transmission filter.
- the coating can also act as a protective layer protecting from a chemical or mechanical agent, and/or it can act as an electrode for electrical connectivity.
- the nanopillars are arranged in at least one aperiodic assembly, such as a correlated disordered assembly.
- the distance P between neighbouring nanopillars is in this embodiment easy to adjust for different optical properties of the filter.
- by arranging the nanopillars in an aperiodic assembly it is possible to achieve a filter which exhibits a strong directional propagation of light and thereby eliminates problems with crosstalk, also for very small pixel sizes. Inter colour and pixel crosstalk is reduced and requirements put on inner focusing lenses in high resolution image sensors may be relaxed .
- the nanopillars are arranged in at least one quasi periodic assembly.
- each of the nanopillars has a height within a range of 500-3000 nm. Within this range, sufficient contrast is achieved in the transmission spectrum.
- the nanopillars are arranged in a two-dimensional pattern at a minimum centre to centre distance P between neighbouring nanopillars within a range of 100-600 nm.
- the filter is in this embodiment optimised for filtering light within the visible range.
- the invention also relates to a display device including the proposed optical transmission filter and to an image sensor device including the proposed optical transmission filter. Advantages and advantageous features of such devices appear from the above description of the proposed filter. Further advantages and advantageous features will appear from the following detailed description.
- FIG. 1 is a sectional view of three different optical transmission filters according to an embodiment of the present invention in a line arrangement
- optical transmission filter is a sectional view of an optical transmission filter according to an embodiment of the invention, is a sectional view of an optical transmission filter according to the first embodiment of the invention, is a sectional view of an optical transmission filter according to the second embodiment of the invention , are transmission spectra of red , green and blue optical transmission filters according to the invention , are transmission spectra of a green optical transmission filter for different angles of incidence according to the invention,
- Fig.8 schematically shows strong directional propagation of light for an optical transmission filter according to an embodiment of the invention
- Fig.9 shows a fabrication process for a filter according to the invention.
- a filter an optical transmission filter 1 , 4 (hereinafter referred to as "a filter") according to a first and a second embodiment of the present invention are shown in fig. 1 a and fig . 1 b, respectively.
- the filter 1 , 4 comprises an aperiodic array of nanopillars (NPs) 2 arranged on a substrate 3.
- NPs nanopillars
- Fig. 1 a shows a filter 1 according to a first embodiment of the present invention , in which NPs 2 are arranged on a substrate 3 and are embedded by a transparent layer of a matrix material 5.
- the NP assemblies of the filter 1 are arranged aperiodically in a correlated disorder manner, which is here a deviation from a hexagonal arrangement by some percentage, further discussed below.
- the assemblies have a minimum centre to centre NP spacing P, pillar diameter D and height h. For a filter of a particular colour, these parameters are the same for all the NPs and NP assemblies.
- the refractive index of the filter 10 changes in a correlated perturbed manner in transverse directions along the substrate, depending on the degree of correlation. Referring to fig .
- the filter 4 according to this second embodiment is similar to the filter 1 shown in fig . 1 a, with the only difference being the absence of a matrix material 5.
- This configuration may be useful for some application in displays or image sensors, although it will not change the transmission spectrum of the filter.
- the NPs can be of e.g. circular, elliptical , square, rectangular or polygonal cross section.
- the NPs are preferably cylindrical with the long axes of the NPs extending in parallel or essentially in parallel.
- the minimum centre to centre distance P between neighbouring NPs 2 can be in the range of 100 to 1000 nm, preferably 100 to 600 nm depending on the average equivalent diameter D of the NPs.
- the average equivalent diameter D hereinafter also referred to as the diameter, is here to be understood as the diameter of a circle having the cross sectional area of the NP.
- the diameter D can be from 50 nm to 350 nm for the shortest to the longest wavelength of visible light in ascending order.
- the height h of the NPs can vary from 500 nm to 3000 nm. The height h can be chosen for trade-off in contrast between a transmission peak 10 and rejection dips 12, 13 (see fig . 5) in a transmission spectrum of the filter.
- Different colours can be extracted from white light by changing the diameter of the NPs 2 in all shown filters according to the invention, while keeping the minimum centre to centre distance between NPs fixed.
- the following examples illustrate typical values for the geometric parameters for the case of Si NPs embedded in a PDMS matrix.
- a diameter D of 55 ⁇ 15 nm gives a violet colour on the short end of the visible light spectrum, while toward the long end , 205 ⁇ 15 nm gives a red colour for a minimum distance P between adjacent NPs of 400 ⁇ 30 nm in the correlated disorder case.
- diameters D of 55 ⁇ 15 nm give violet colour
- 85 ⁇ 15 nm give blue
- 1 15 ⁇ 15 nm give cyan
- 145 ⁇ 15 nm give green
- 1 75 ⁇ 15 nm give yellow
- 205 ⁇ 15 nm give red colour for a minimum distance D between adjacent NPs of 400 ⁇ 30 nm.
- a period of 430 ⁇ 30 nm in combination with the mentioned diameters D produces the same colours as mentioned above.
- the filter can be model in a Finite-Difference Time-Domain (FDTD) simulation tool and the design can thereby be optimised for colour purity and sharpness.
- FDTD Finite-Difference Time-Domain
- the average equivalent diameter D of the nanopillars 2 is such that a transmission spectrum of the filter is dominated by effects arising from optical coupling between the nanopillars.
- this relation can be expressed as P-D ⁇ A pea k, where A pea k is the wavelength that corresponds to the highest (peak) intensity of a transmission spectrum from the filter.
- the NPs can be made of, or comprise mainly, (monocrystalline) Si , polycrystalline Si , amorphous Si, InP, GaAs, GaN, AIGaAs, GaP, Ge, GeSn, SiGeSn, and mixtures thereof.
- the substrate 3 can be made from a material selected from the group of PDMS, Si, polycrystalline Si , amorphous Si , InP, Ge, GaP, GaN, GaAs, AIGaAs, Si0 2 , Ti0 2 , indium tin oxide (ITO), ZnO, BCB, poly methyl methacrylate (PMMA), Si3N 4 , and mixtures thereof.
- the real part of the refractive index n_NP of the material of the NPs can be equal to or higher than , such as two times higher than, that of the substrate material , n_substrate.
- the absorption coefficient a_NP of the NP material can be within the range 10 2 - 10 6 cm -1 in the visible wavelength range, 400-700 nm.
- the absorption coefficient a_substrate is the same for the NP material or close to zero, depending on the application.
- the NPs of the filter can also comprise of a coating with another material selected from the group of materials consisting of S1O2, AI2O3, T1O2, ZnO, ITO, Si3N 4 , and mixtures thereof.
- the coating may be 1 -100 nm thick.
- the aperiodic pattern of the NP assemblies can be generated following e.g. a molecular dynamics collision between hard spheres algorithm.
- the Lubachevsky-Stillinger algorithm can be used to generate correlated disordered patterns.
- the percentage of deviation from a hexagonal arrangement of the NPs is in this algorithm defined by the initial packing fraction (IPF) of the NPs in a unit area.
- the IPF is defined as the percentage of an area covered by a said entity, i.e. NPs, in a 2D space. While 75% IPF gives hexagonal arrays, decreasing the IPF from 75% down to 30% gives an increase in deviation from the hexagonal arrangement, but in a correlated manner.
- 2D correlated disorder patterns can e.g. be having a disorder of the order of 15% to 70% for a filter according to the present invention.
- Particle swarm optimisation algorithms can alternatively be used to generate an aperiodic pattern, and also other algorithms.
- aperiodic and quasi- periodic patterns can also be used, such as a quasi-periodic Fibonacci pattern, a Rudin-Shapiro pattern, or a Thue-Morse pattern or biomimicry of aperiodic or correlated disordered pattern existing in nature, such as in bird feathers, in insects or in plants, although a person skilled in the art realises that also many other options exist.
- Fig . 2 shows a cross sectional view of RGB filters using three filters 6, 7, 8 according to the invention with aperiodically arranged NP assemblies arranged together.
- the red filter 6, the green filter 7, and the blue filter 8 are arranged side by side and separated by a blank spacing 9.
- the blank spacing 9 restricts the downsizing of pixel size and pitch and is essential to separate different colours, or to avoid cross talk.
- the RGB filter is capable of accepting white light (WL) with a wide incident angle, from normal incidence up to 60° off normal, and filtering it to different colours.
- red (R), green (G) and blue (B) light is transmitted through designated filters depending on filter properties, diameter of the NPs and centre to centre spacing of the NPs of a particular filter.
- the red filter 6 has the largest diameter of the NPs 2
- the blue filter 8 has the smallest diameters of the NPs 2
- the green filter 7 has an intermediate diameter of the NPs 2 for a particular centre to centre spacing of the NPs 2.
- a photodetector PD for each of the filters 6, 7, 8 can be arranged directly below the filter or separated by another component.
- Fig . 3 shows top views of a red filter 6, a green filter 7 and a blue filter 8, all having aperiodically arranged NPs 2 on a substrate 3, arranged together side by side.
- Fig . 4a, 4b and 4c show cross sections of filters according to different embodiments of the present invention, wherein NPs 2 are arranged in aperiodic assemblies.
- Fig 4a shows NPs embedded in a matrix material 5 without supporting substrate.
- Fig 4b shows an embodiment in which NPs 2 are arranged on a substrate 3 and embedded by a matrix material 5.
- Fig 4c shows an embodiment in which NPs 2 are arranged on a substrate 3 without being embedded in a matrix material 5.
- Fig . 5 shows a transmission spectrum from an RGB filter comprising three filters according to the present invention . Light of a particular colour is transmitted by the filter with a corresponding transmission spectrum which is defined by inter nanopillar spacing P, pillar diameter D and height h.
- P nanopillar spacing
- a first major dip 12 and a second major dip 13 (here shown for blue light) define the transmission spectrum and the transmitted colour.
- a transmission peak 10 (corresponding to Apeak ) is the highest (peak) intensity position of a transmission spectrum from said optical transmission filter.
- the position (wavelength) of the first major dip 12 is defined by NP diameter D
- the position of the second major dip 13 is defined by both NP diameter D and minimum centre to centre distance P between NPs.
- the height h of the NPs 2 controls the contrast ratio between the major dips 12, 13 and the transmission peak 10.
- the transmission in percent of incident light at the major dips 12, 13 and at the transmission peak 10 position is inversely proportional to the height h of the NPs.
- the full-width at half maximum (FWHM) 1 1 of the transmission spectrum for a particular colour can be increased or decreased by increasing or decreasing the minimum distance P between NPs.
- the filter according to the invention having a correlated disorder NP pattern has an additional advantage of strong directional propagation of light as shown in fig . 8. While transmitting through a filter 14, due to transverse localisation, the output width 16 of a wave front 18 of transmitted light is less or equal to the input width 15 of a wave front 17 of incoming light.
- NPs shown per filter in the above discussed examples is chosen merely for illustrative purpose. The actual number can vary from case to case up to a very large number depending on the size of the filter. However, a number of 5-15 nanopillars are sufficient to produce a distinct colour in transmission and obtain a transmission spectrum such as shown in fig. 5.
- the filters according to the invention can be fabricated using standard CMOS fabrication techniques.
- Nanoimprint lithography can preferably be used for patterning a polymer mask for fabrication of NP assemblies.
- Nanopillar dimensions like diameter D or side of the NP, spacing between NPs or period of NP arrays and height h of the NP are determined by mask pattern and inductively coupled plasma etching parameters.
- the filter according to the invention are also well suited to be fabricated using interference lithography, direct laser writing, e-beam lithography, nano stencil lithography, colloidal lithography, etc.
- the generic fabrication process flow for filters according to the invention are shown in fig .9 and listed below:
- the non-periodic patterns of NPs are transferred to a photoresist (PR) mask on a parent substrate such as a Si wafer coated with a S 1 O2 hard mask by nanoimprint lithography. 2) The patterns are further transferred to the S 1 O2 hard mask by plasma reactive ion etching (RIE) process.
- PR photoresist
- RIE plasma reactive ion etching
- the patterned substrate is etched through the S 1 O2 hard mask by dry plasma etching in a 'Pseudo Bosch' process to create Si nanopillars.
- the as-etched Si nanopillars are further modified by another dry etching step. This step is particularly for ease of subsequent nanopillar peel-off process.
- a flexible PDMS film is moulded over the Si NPs by pouring PDMS (liquid) on the NPs and a subsequent thermal curing .
- the filter according to the present invention is possible to directly integrate with displays of LCD, LED or OLED type during the display fabrication process, or it is possible to separately fabricate the filter and fit it to a display device afterwards.
- the filter can also be used as a colour filter for image sensors for digital cameras and other devices. It can in that case be integrated during a CMOS or CCD image sensor fabrication process in the same material platform, or it can be separately fabricated and integrated afterwards.
- the filter can be used as a standalone flexible or nonflexible colour filter for scientific or aesthetic applications.
- the filters can furthermore be used e.g. in smart windows and flexible nano-photonics.
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- Engineering & Computer Science (AREA)
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- Optical Filters (AREA)
Abstract
La présente invention concerne un filtre de transmission optique de type passe-bande qui comprend une pluralité de nanopiliers portés par un moyen de support, ces nanopiliers étant disposés selon une configuration non périodique bidimensionnelle à une distance centre à centre minimale (P) entre des nanopiliers voisins comprise entre 100 et 1 000 nm, et lesdits nanopiliers ayant un diamètre équivalent moyen (D) qui va de 50 à 350 nm. Le rapport entre ladite distance minimale (P) entre des nanopiliers voisins et ledit diamètre équivalent moyen (D) des nanopiliers est tel qu'un spectre de transmission du filtre de transmission optique est dominé par les effets découlant du couplage optique entre les nanopiliers.
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