WO2016194917A1 - Adhesive for temporary fixing, adhesive film, adhesive supporting body, laminate and kit - Google Patents

Adhesive for temporary fixing, adhesive film, adhesive supporting body, laminate and kit Download PDF

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Publication number
WO2016194917A1
WO2016194917A1 PCT/JP2016/066089 JP2016066089W WO2016194917A1 WO 2016194917 A1 WO2016194917 A1 WO 2016194917A1 JP 2016066089 W JP2016066089 W JP 2016066089W WO 2016194917 A1 WO2016194917 A1 WO 2016194917A1
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WO
WIPO (PCT)
Prior art keywords
adhesive
adhesive layer
mass
temporary fixing
elastomer
Prior art date
Application number
PCT/JP2016/066089
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French (fr)
Japanese (ja)
Inventor
悠 岩井
義貴 加持
Original Assignee
富士フイルム株式会社
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Application filed by 富士フイルム株式会社 filed Critical 富士フイルム株式会社
Priority to JP2017521956A priority Critical patent/JP6588094B2/en
Priority to KR1020177033622A priority patent/KR102045770B1/en
Publication of WO2016194917A1 publication Critical patent/WO2016194917A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J125/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
    • C09J125/02Homopolymers or copolymers of hydrocarbons
    • C09J125/04Homopolymers or copolymers of styrene
    • C09J125/08Copolymers of styrene
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J153/00Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Definitions

  • the present invention relates to a temporary fixing adhesive, an adhesive film, an adhesive support, a laminate, and a kit. More specifically, the present invention relates to a temporary fixing adhesive, an adhesive film, an adhesive support, a laminate, and a kit that can be preferably used for manufacturing a semiconductor device or the like.
  • a wire bonding method As an electrical connection method from an integrated circuit in an IC chip to an external terminal of the IC chip, a wire bonding method has been widely known.
  • a device wafer In order to reduce the size of an IC chip, a device wafer is used.
  • a method is known in which a through-hole is provided in the semiconductor device and a metal plug as an external terminal is connected to an integrated circuit so as to pass through the through-hole (so-called silicon through electrode (TSV) forming method).
  • TSV silicon through electrode
  • a technique for improving the degree of integration per unit area of a device wafer by multilayering an integrated circuit in an IC chip is known.
  • the multilayered integrated circuit increases the thickness of the IC chip, it is necessary to reduce the thickness of the members constituting the IC chip.
  • the thinning of the device wafer is being considered as a thinning of such a member, which not only leads to the miniaturization of the IC chip, but also saves the process of manufacturing the through hole of the device wafer in the production of the silicon through electrode. Because it is possible, it is considered promising.
  • thinning of semiconductor devices such as power devices and image sensors has been attempted from the viewpoint of improving the degree of integration and improving the degree of freedom of the device structure.
  • a device wafer having a thickness of about 700 to 900 ⁇ m is widely known, but in recent years, for the purpose of reducing the size of an IC chip or the like, the thickness of the device wafer can be reduced to 200 ⁇ m or less. Has been tried. However, since a device wafer having a thickness of 200 ⁇ m or less is very thin and a semiconductor device manufacturing member based on the device wafer is very thin, such a member may be further processed, or When the member is simply moved, it is difficult to support the member stably and without damage.
  • Patent Document 1 discloses an adhesive composition having a polystyrene-based elastomer and a surface modifier.
  • Patent Document 2 discloses a temporary fixing material containing a cycloolefin polymer and a compound having a structure such as a dialkyl silicone structure and a polyoxyalkylene structure.
  • Patent Document 3 describes that a release layer and a protective layer are used for temporary adhesion between a device wafer and a support substrate, and a material containing fluorine atoms and / or silicon atoms is used for the release layer.
  • the adhesive composition described in Patent Document 1 and the temporary fixing material described in Patent Document 2 peel the device wafer from the support at room temperature after thinning the device wafer. I found it difficult. Further, usually, when trying to improve the peelability, the adhesiveness tends to be inferior.
  • the present invention is intended to solve such a problem, is excellent in peelability at room temperature, and has a temporary adhesive that is excellent in adhesiveness, and the above temporary adhesive.
  • An object is to provide an adhesive film, an adhesive support, a laminate, and a kit.
  • ⁇ 1> Contains a compound containing silicon atoms and an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, which is liquid at 25 ° C.
  • Temporary adhesive ⁇ 2> The temporary fixing adhesive according to ⁇ 1>, wherein the compound containing the silicon atom has a 10% thermal mass reduction temperature of 250 ° C. or higher which is increased from 25 ° C. at 20 ° C./min.
  • ⁇ 3> The temporary adhesive according to ⁇ 1> or ⁇ 2>, wherein the elastomer X has a hardness measured by a type A durometer according to the method of JIS K6253 of 80 or more.
  • ⁇ 4> The temporary fixing adhesive according to any one of ⁇ 1> to ⁇ 3>, further comprising an elastomer Y containing a repeating unit derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units.
  • Agent. ⁇ 5> The temporary fixing adhesive according to ⁇ 4>, wherein the mass ratio of the elastomer X to the elastomer Y is 5:95 to 95: 5.
  • At least one of the elastomers included in the temporary fixing adhesive has a 5% thermal mass reduction temperature of 250 ° C. or higher, increased from 25 ° C. at 20 ° C./min, ⁇ 1> to ⁇ 5 >
  • the temporary fixing adhesive in any one of>.
  • ⁇ 7> The temporary fixing adhesive according to any one of ⁇ 1> to ⁇ 6>, wherein the amount of unsaturated double bonds of at least one of the elastomers included in the temporary fixing adhesive is 7 mmol / g or less .
  • ⁇ 8> The temporary fixing adhesive according to any one of ⁇ 1> to ⁇ 7>, wherein at least one of the elastomers included in the temporary fixing adhesive is a hydrogenated product.
  • Temporary tack adhesive according to crab ⁇ 12> The temporary fixing according to any one of ⁇ 1> to ⁇ 11>, wherein the compound containing a silicon atom is selected from dimethylpolysiloxane, methylphenylpolysiloxane, diphenylpolysiloxane, and polyether-modified polysiloxane adhesive.
  • An adhesive support comprising an adhesive layer comprising the temporary fixing adhesive according to any one of ⁇ 1> to ⁇ 14>, and a support.
  • a laminate comprising a support, an adhesive layer comprising the temporary fixing adhesive according to any one of ⁇ 1> to ⁇ 14>, and a substrate.
  • ⁇ 18> The laminate according to ⁇ 17>, wherein the adhesive layer is located on the surface of the support, and the base material is located on the surface of the adhesive layer opposite to the support.
  • ⁇ 19> A second adhesive in which the support, the adhesive layer, and the base material are laminated in the order described above, and the composition of the adhesive layer is different between the support and the adhesive layer.
  • ⁇ 20> A second adhesive layer in which the support, the adhesive layer, and the base material are laminated in the order described above, and the composition of the adhesive layer is different between the adhesive layer and the base material.
  • the laminate according to ⁇ 17> comprising: ⁇ 21> The second adhesive layer according to ⁇ 19> or ⁇ 20>, wherein the second adhesive layer includes an elastomer X containing a repeating unit derived from styrene in a ratio of 50% by mass to 95% by mass in all repeating units.
  • the laminated body as described in. ⁇ 23> The content of the compound that is liquid at 25 ° C.
  • substitution and non-substitution includes what does not have a substituent and what has a substituent.
  • the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • Actinic light or “radiation” in the present specification means, for example, those including visible light, ultraviolet rays, far ultraviolet rays, electron beams, X-rays and the like.
  • light means actinic rays or radiation.
  • exposure means not only exposure using a mercury lamp, ultraviolet rays, far ultraviolet rays typified by excimer laser, X-ray, EUV light (Extreme Ultra-Violet), etc. Also includes drawing using a particle beam such as a beam and an ion beam.
  • (meth) acrylate represents acrylate and methacrylate
  • (meth) acryl represents acryl and methacryl
  • (meth) acryloyl represents acryloyl and methacryloyl.
  • a weight average molecular weight and a number average molecular weight are defined as a polystyrene conversion value in gel permeation chromatography (GPC) measurement.
  • the weight average molecular weight (Mw) and the number average molecular weight (Mn) are, for example, HLC-8220 (manufactured by Tosoh Corporation), and TSKgel Super AWM-H (manufactured by Tosoh Corporation, 6) as a column.
  • 0.0 mm (inner diameter) ⁇ 15.0 cm) can be obtained by using a 10 mmol / L lithium bromide NMP (N-methylpyrrolidinone) solution as an eluent.
  • the “lipophilic group” means a functional group that does not contain a hydrophilic group.
  • the “hydrophilic group” means a functional group showing affinity with water.
  • the temporary fixing adhesive of the present invention is a liquid at 25 ° C. and contains a silicon atom-containing compound (hereinafter sometimes referred to as “silicon-based liquid compound”) and a repeating unit derived from styrene as all repeating units. And elastomer X contained in a proportion of 50% by mass or more and 95% by mass or less.
  • silicon-based liquid compound a silicon atom-containing compound
  • elastomer X contained in a proportion of 50% by mass or more and 95% by mass or less.
  • the temporary fixing adhesive of the present invention contains the above-described silicon-based liquid compound, the silicon-based liquid compound is likely to be unevenly distributed on the surface layer of the adhesive layer, and the concentration of the silicon-based liquid compound in the surface layer of the adhesive layer can be increased. it can. Therefore, even if the amount of the silicon-based liquid compound is relatively small with respect to the solid content of the temporary fixing adhesive, an adhesive layer having excellent peelability with respect to the substrate and the support can be formed.
  • the elastomer X which contains the repeating unit derived from styrene in the ratio of 50 mass% or more and 95 mass% or less in all the repeating units is included, it is derived from the elastomer X in a part or all of the adhesive layer made of the temporary fixing adhesive. A hard region is formed and the peelability is improved.
  • the temporary fixing adhesive of the present invention can be particularly preferably used as a temporary fixing adhesive for manufacturing a semiconductor device. Hereinafter, the temporary fixing adhesive of the present invention will be specifically described.
  • the temporary fixing adhesive of the present invention contains a silicon-based liquid compound.
  • the liquid state means a compound having fluidity at 25 ° C. and having a viscosity of 1 to 100,000 mPa ⁇ s at 25 ° C., for example.
  • the viscosity of the silicon-based liquid compound at 25 ° C. is more preferably 10 to 20,000 mPa ⁇ s, and still more preferably 100 to 15,000 mPa ⁇ s.
  • the silicon-based liquid compound is more likely to be unevenly distributed in the surface layer of the adhesive layer, which is preferable.
  • the silicon-based liquid compound can be preferably used in any form of oligomer or polymer. Moreover, the mixture of an oligomer and a polymer may be sufficient. Such a mixture may further contain a monomer.
  • the silicon-based liquid compound may be a monomer.
  • the silicon-based liquid compound is preferably an oligomer, a polymer, or a mixture thereof from the viewpoint of heat resistance and the like.
  • an addition polymer, a polycondensate, an addition condensate and the like can be used without particular limitation, but a polycondensate is particularly preferable.
  • the weight average molecular weight of the silicon-based liquid compound is preferably 500 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 20,000.
  • the silicon-based liquid compound is preferably a compound that does not denature during the treatment of the base material used for temporary adhesion.
  • a compound that can exist in a liquid state even after heating at 250 ° C. or higher or treating the substrate with various chemical solutions is preferable.
  • the viscosity at 25 ° C. is 1 to 100,000 mPa ⁇ s after heating to 250 ° C. under a temperature rising condition of 10 ° C./min from a state of 25 ° C. It is preferably 10 to 20,000 mPa ⁇ s, more preferably 100 to 15,000 mPa ⁇ s.
  • the silicon-based liquid compound having such characteristics is preferably a non-thermosetting compound having no reactive group.
  • the reactive group here refers to all groups that react by heating at 250 ° C., and examples thereof include a polymerizable group and a hydrolyzable group. Specifically, a (meth) acryl group, an epoxy group, an isocyanato group, etc. are mentioned, for example.
  • the silicon-based liquid compound preferably has a 10% thermal mass decrease temperature of 250 ° C. or higher, more preferably 280 ° C. or higher, which is heated from 25 ° C. at 20 ° C./min.
  • an upper limit does not have limitation in particular, For example, 1000 degrees C or less is preferable and 800 degrees C or less is more preferable. According to this aspect, it is easy to form an adhesive layer having excellent heat resistance.
  • mass decreasing temperature is a value measured on the said temperature rising conditions in nitrogen stream by the thermogravimetry apparatus (TGA).
  • the silicon-based liquid compound used in the present invention preferably contains a lipophilic group.
  • the lipophilic group include linear or branched alkyl groups, cycloalkyl groups, and aromatic groups.
  • the alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 10 carbon atoms, and still more preferably 1 to 3 carbon atoms.
  • Specific examples of alkyl groups include, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, octadecyl, isopropyl Group, isobutyl group, sec-butyl group, tert-butyl group, 1-ethylpentyl group, 2-ethylhexyl group.
  • the alkyl group may have a substituent.
  • Examples of the substituent include a halogen atom, an alkoxy group, and an aromatic group.
  • Examples of the halogen atom include a chlorine atom, a fluorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
  • the alkoxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms.
  • the alkoxy group is preferably linear or branched.
  • the aromatic group may be monocyclic or polycyclic.
  • the carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and particularly preferably 6 to 10.
  • the cycloalkyl group may be monocyclic or polycyclic.
  • the cycloalkyl group preferably has 3 to 30 carbon atoms, more preferably 4 to 30 carbon atoms, still more preferably 6 to 30 carbon atoms, and particularly preferably 6 to 20 carbon atoms.
  • Examples of the monocyclic cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group.
  • Examples of the polycyclic cycloalkyl group include adamantyl group, norbornyl group, bornyl group, camphenyl group, decahydronaphthyl group, tricyclodecanyl group, tetracyclodecanyl group, camphoroyl group, dicyclohexyl group and pinenyl group. Can be mentioned.
  • the cycloalkyl group may have the substituent described above.
  • the aromatic group may be monocyclic or polycyclic.
  • the carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and particularly preferably 6 to 10. It is preferable that the aromatic group does not contain a hetero atom (for example, a nitrogen atom, an oxygen atom, a sulfur atom, etc.) in the elements constituting the ring.
  • aromatic group examples include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acenaphthene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene ring , Triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, thiazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, Benzothiophene ring, isobenzofuran ring,
  • the silicon-based liquid compound is preferably a compound represented by the following general formula.
  • R 1 and R 2 in the above general formula are each independently a linear or branched alkyl group, cycloalkyl group or aromatic group, and one of R 1 and R 2 is an organic group containing a polyether chain. It may be.
  • L 1 represents —O— or a linking group containing a polyether chain.
  • the preferred range of the linear or branched alkyl group, cycloalkyl group or aromatic group as R 1 and R 2 in the above general formula is the linear or branched alkyl group described for the lipophilic group. And the same as the preferable range.
  • one of R 1 and R 2 is preferably an organic group containing a polyether chain.
  • the polyether structure in the organic group containing a polyether chain is not particularly limited as long as it has a structure having a plurality of ether bonds.
  • polyethylene glycol structure polyethylene oxide structure
  • polypropylene glycol structure polypropylene oxide structure
  • polyoxyalkylene structures such as polybutylene glycol (polytetramethylene glycol) structures and polyether structures derived from multiple types of alkylene glycol (or alkylene oxide) (for example, poly (propylene glycol / ethylene glycol) structures). It is done.
  • the addition form of each alkylene glycol in the polyether structure derived from a plurality of types of alkylene glycols may be a block type (block copolymer type) or a random type (random copolymer type). Also good.
  • the organic group containing the polyether chain may be an organic group consisting only of the polyether structure, or one or two or more of the polyether structure and one or two or more linking groups (one or more atoms may be bonded). It may be an organic group having a structure in which a divalent group) is linked.
  • Examples of the linking group in the organic group containing a polyether chain include, for example, a divalent hydrocarbon group (particularly, a linear or branched alkylene group), a thioether group (—S—), an ester group (—COO—). ), An amide group (—CONH—), a carbonyl group (—CO—), a carbonate group (—OCOO—), a group in which two or more of these are bonded, and the like.
  • the polyether chain of L 1 in the above general formula is not particularly limited as long as it has a structure having a plurality of the ether bonds described above, but a structure having a plurality of the ether bonds described above can be preferably used.
  • the polyether chain may be an organic group consisting of only a polyether structure, or one or two or more of the above polyether structure and one or two or more linking groups (a divalent having one or more atoms). And an organic group having a structure in which the group) is linked.
  • linking group in the organic group containing a polyether chain examples include, for example, a divalent hydrocarbon group (particularly, a linear or branched alkylene group), a thioether group (—S—), an ester group (—COO—). ), An amide group (—CONH—), a carbonyl group (—CO—), a carbonate group (—OCOO—), a group in which two or more of these are bonded, and the like.
  • the silicon-based liquid compound in the present invention is more preferably at least one selected from dimethylpolysiloxane, methylphenylpolysiloxane, diphenylpolysiloxane, and polyether-modified polysiloxane.
  • silicon-based liquid compounds examples include JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950, JP-A-63-34540, Of the surfactants described in Kaihei 7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988 and JP-A-2001-330953, those which are liquid at 25 ° C. Can be mentioned.
  • Commercially available products include “BYK-300”, “BYK-301 / 302”, “BYK-306”, “BYK-307”, “BYK-310”, “BYK-315”, “BYK-313”.
  • the content of the silicon-based liquid compound in the temporary fixing adhesive of the present invention is preferably 0.009% by mass or more and 0.01% by mass or more with respect to the total amount of elastomer contained in the temporary fixing adhesive. More preferably, 0.05% by mass or more is further preferable, 0.1% by mass or more is particularly preferable, and 0.2% by mass or more is even more preferable.
  • the upper limit is preferably 10% by mass or less, more preferably 5% by mass or less, more preferably less than 2.5% by mass, and even more preferably 1% by mass or less. Preferably, it is 0.6% by mass or less. If content of a silicon-type liquid compound is the said range, it is excellent by adhesiveness and peelability.
  • the present invention is highly valuable in that the effects of the present invention can be achieved even if the amount of the temporary fixing adhesive is small.
  • One silicon-based liquid compound may be used alone, or two or more silicon-based liquid compounds may be used in combination. When using 2 or more types together, it is preferable that total content is the said range.
  • the temporary fix adhesive of the present invention contains an elastomer.
  • an elastomer By using an elastomer, it is possible to form an adhesive layer having excellent adhesiveness by following the fine irregularities of the support and the base material and by an appropriate anchor effect.
  • an elastomer represents the high molecular compound which shows elastic deformation. That is, when an external force is applied, the polymer compound is defined as a polymer compound that has the property of instantly deforming according to the external force and recovering the original shape in a short time when the external force is removed.
  • the elastomer included as an essential component in the present invention is an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, and further, repeating units derived from styrene are all repeated. It is also preferable to include the elastomer Y contained in the unit at a ratio of 10% by mass or more and less than 50% by mass.
  • the mechanism by which such an effect is obtained can be assumed to be as follows. That is, since the elastomer X is a relatively hard material, an adhesive layer having excellent peelability can be produced by including the elastomer X. In addition, since the elastomer Y is a relatively soft material, it is easy to form an adhesive layer having elasticity. For this reason, when manufacturing the laminated body of a base material and a support using the temporary fixing adhesive of the present invention, and polishing the base material into a thin film, even if pressure during polishing is locally applied, The adhesive layer can be easily elastically deformed to return to the original shape. As a result, excellent flat polishing properties can be obtained.
  • the adhesive layer can relieve internal stress generated during cooling and effectively suppress the occurrence of warpage.
  • the elastomer Y is blended with the elastomer X, the excellent peelability by the elastomer X is sufficiently achieved due to the presence of a region where the elastomer X is phase-separated.
  • polystyrene-type elastomer there is no restriction
  • SBS styrene-butadiene-styrene block copolymer
  • SIS styrene-isoprene-styrene block copolymer
  • SEBS styrene-ethylene-butylene-styrene block copolymer
  • styrene-butadiene-butylene-styrene styrene-butadiene-butylene-styrene.
  • Examples thereof include copolymers (SBBS) and hydrogenated products thereof, styrene-ethylene-propylene-styrene block copolymers (SEPS), and styrene-ethylene-ethylene-propylene-styrene block copolymers.
  • SBBS copolymers
  • SEPS styrene-ethylene-propylene-styrene block copolymers
  • SEPS styrene-ethylene-ethylene-propylene-styrene block copolymers
  • the weight average molecular weight of the polystyrene-based elastomer is preferably from 2,000 to 200,000, more preferably from 10,000 to 200,000, and even more preferably from 50,000 to 100,000. By being in this range, the solubility of the temporary fixing adhesive in a solvent will be excellent, and the applicability will be improved. In addition, when the remaining adhesive layer is removed after peeling the substrate from the support, there is an advantage that no residue remains on the substrate or the support because of excellent solubility in a solvent.
  • examples of the polystyrene-based elastomer include block copolymers, random copolymers, and graft copolymers.
  • Block copolymers are preferred, and one or both ends are block copolymers of styrene. Is more preferable, and it is particularly preferable that both ends are block copolymers of styrene. If both ends of the polystyrene-based elastomer are made of a styrene block copolymer (a repeating unit derived from styrene), the thermal stability tends to be further improved. This is because a repeating unit derived from styrene having high heat resistance is present at the terminal.
  • the block part of the repeating unit derived from styrene is preferably a reactive polystyrene hard block, which tends to be more excellent in heat resistance and chemical resistance.
  • a reactive polystyrene hard block which tends to be more excellent in heat resistance and chemical resistance.
  • phase-separation by a hard block and a soft block will be performed at 200 degreeC or more.
  • the shape of the phase separation is considered to contribute to the suppression of the occurrence of irregularities on the substrate surface of the device wafer.
  • such a resin is more preferable from the viewpoint of solubility in a solvent and resistance to a resist solvent.
  • the polystyrene elastomer is preferably a hydrogenated product.
  • the polystyrene-based elastomer is a hydrogenated product, thermal stability and storage stability are improved. Furthermore, the peelability and the cleaning / removability of the adhesive layer after peeling are improved.
  • the hydrogenated product means a polymer having a structure in which an elastomer is hydrogenated (hydrogenated).
  • the polystyrene elastomer has a 5% thermal mass reduction temperature of 25 ° C. raised at 20 ° C./min, preferably 250 ° C. or higher, more preferably 300 ° C. or higher, and 350 ° C. or higher. Is more preferable, and it is especially preferable that it is 400 degreeC or more. Moreover, although an upper limit is not specifically limited, For example, 1000 degrees C or less is preferable and 800 degrees C or less is more preferable. According to this aspect, it is easy to form an adhesive layer having excellent heat resistance.
  • Polystyrene elastomer can be deformed up to 200% with a small external force at room temperature (20 ° C.) when the original size is 100%, and within 130% or less in a short time when the external force is removed. It preferably has a returning property.
  • the amount of unsaturated double bonds in the polystyrene-based elastomer is preferably less than 15 mmol / g, more preferably less than 7 mmol / g, and less than 5 mmol / g from the viewpoint of peelability after the heating step. More preferably, it is more preferably less than 0.5 mmol / g.
  • the lower limit is not particularly defined, but can be, for example, 0.001 mmol / g or more.
  • the amount of unsaturated double bonds here does not include the unsaturated double bond in the benzene ring derived from styrene.
  • the amount of unsaturated double bonds can be calculated by nuclear magnetic resonance (NMR) measurement.
  • a repeating unit derived from styrene is a structural unit derived from styrene contained in a polymer when styrene or a styrene derivative is polymerized, and may have a substituent.
  • the styrene derivative include ⁇ -methylstyrene, 3-methylstyrene, 4-propylstyrene, 4-cyclohexylstyrene, and the like.
  • substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an acetoxy group, and a carboxyl group.
  • Examples of commercially available polystyrene elastomers include Tufprene A, Tufprene 125, Tufprene 126S, Solprene T, Asaprene T-411, Asaprene T-432, Asaprene T-437, Asaprene T-438, Asaprene T-439, Tuftec H1272 Tuftec P1500, Tuftec H1052, Tuftec H1062, Tuftec M1943, Tuftec M1911, Tuftec H1041, Tuftec MP10, Tuftec M1913, Tuftec H1051, Tuftech H1053, Tuftec P2000, Tuftec H1043 (trade name, manufactured by Asahi Kasei Elastomer Co., Ltd.) AR-850C, Elastomer AR-815C, Elastomer AR-840C, Elastomer AR-830C, Elasto -AR-860C, Elastomer AR-875C, Elastomer AR-8
  • Elastomer X is an elastomer containing a repeating unit derived from styrene in a proportion of 50% by mass to 95% by mass in all repeating units, and the content of the repeating unit derived from styrene exceeds 50% by mass and is 95% by mass. % Or more, more than 50% by weight, more preferably 90% by weight or less, more preferably more than 50% by weight and 80% by weight or less, particularly preferably 55 to 75% by weight, even more preferably 56 to 70% by weight. .
  • the hardness of the elastomer X is preferably 83 or greater, more preferably 85 or greater, and even more preferably 90 or greater.
  • the upper limit value is not particularly defined, but is 99 or less, for example.
  • the hardness is a value measured with a type A durometer according to the method of JIS (Japanese Industrial Standard) K6253.
  • Elastomer Y is an elastomer that contains repeating units derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units, and the content of repeating units derived from styrene is preferably 10 to 45% by mass, It is more preferably 10 to 40% by mass, further preferably 12 to 35% by mass, and particularly preferably 13 to 33% by mass.
  • the hardness of the elastomer Y is preferably 82 or less, more preferably 80 or less, and even more preferably 78 or less.
  • the lower limit is not particularly defined but is 1 or more.
  • the difference between the hardness of the elastomer X and the hardness of the elastomer Y is preferably 5 to 40, more preferably 10 to 35, still more preferably 15 to 33, and more preferably 17 to 29. More preferably. By setting it as such a range, the effect of this invention is exhibited more effectively.
  • an elastomer other than the elastomer X and the elastomer Y may be blended.
  • Other elastomers that can be used include polyester elastomers, polyolefin elastomers, polyurethane elastomers, polyamide elastomers, polyacryl elastomers, silicone elastomers, polyimide elastomers, rubber-modified epoxy resins, and the like.
  • the total amount of elastomer X, elastomer Y and other elastomers in the temporary fixing adhesive of the present invention is preferably 50.00 to 99.99% by mass relative to the mass of the temporary fixing adhesive excluding the solvent. 00 to 99.99 mass% is more preferable, and 88.00 to 99.99 mass% is particularly preferable. If the content of the elastomer is in the above range, it is more excellent in adhesiveness and peelability.
  • the elastomer X, the elastomer Y, and the other elastomer in the temporary fixing adhesive of the present invention may be a plurality of combinations.
  • the total amount of elastomer X and elastomer Y preferably accounts for 90% by mass or more, more preferably 95% by mass or more, 98 It is particularly preferable to occupy at least mass%.
  • the temporary tacking adhesive of the present invention may contain an antioxidant from the viewpoint of preventing low molecular weight and gelation of the elastomer due to oxidation during heating.
  • an antioxidant a phenol-based antioxidant, a sulfur-based antioxidant, a phosphorus-based antioxidant, a quinone-based antioxidant, an amine-based antioxidant, and the like can be used.
  • phenolic antioxidants include para-methoxyphenol, 2,6-di-tert-butyl-4-methylphenol, “Irganox 1010”, “Irganox 1330”, “Irganox 3114”, “Irganox 1035” manufactured by BASF Corporation, Examples thereof include “Sumilizer MDP-S” and “Sumilizer GA-80” manufactured by Sumitomo Chemical Co., Ltd.
  • sulfur-based antioxidant include 3,3′-thiodipropionate distearyl, “Sumilizer TPM”, “Sumilizer TPS”, “Sumilizer TP-D” manufactured by Sumitomo Chemical Co., Ltd., and the like.
  • phosphorus antioxidants include tris (2,4-di-tert-butylphenyl) phosphite, bis (2,4-di-tert-butylphenyl) pentaerythritol diphosphite, and poly (dipropylene glycol) phenyl.
  • examples thereof include phosphite, diphenylisodecyl phosphite, 2-ethylhexyl diphenyl phosphite, triphenyl phosphite, “Irgafos 168” and “Irgafos 38” manufactured by BASF Corporation.
  • Examples of the quinone antioxidant include para-benzoquinone and 2-tert-butyl-1,4-benzoquinone.
  • Examples of amine-based antioxidants include dimethylaniline and phenothiazine.
  • Irganox 1010, Irganox 1330, 3,3′-thiodipropionate distearyl and Sumilizer TP-D are preferable, Irganox 1010 and Irganox 1330 are more preferable, and Irganox 1010 is particularly preferable.
  • a phenol-based antioxidant and a sulfur-based antioxidant or a phosphorus-based antioxidant in combination, and a phenol-based antioxidant and a sulfur-based antioxidant are used in combination. It is particularly preferred.
  • a polystyrene-based elastomer when used as the elastomer, it is preferable to use a phenol-based antioxidant and a sulfur-based antioxidant in combination.
  • phenolic antioxidant: sulfurous antioxidant 95: 5 to 5:95 is preferable, and 25:75 to 75:25 is more preferable.
  • Irganox 1010 and Sumilizer TP-D Irganox 1330 and Sumilizer TP-D, and Sumilizer GA-80 and Sumilizer TP-D are preferable, Irganox 1010 and Sumilizer TP-D, 13g More preferred are Irganox 1010 and Sumilizer TP-D.
  • the molecular weight of the antioxidant is preferably 400 or more, more preferably 600 or more, and particularly preferably 750 or more, from the viewpoint of preventing sublimation during heating.
  • the content of the antioxidant is preferably 0.001 to 20.0% by mass with respect to the total solid content of the temporary adhesive, and 0.005 to 10. 0 mass% is more preferable. Only one type of antioxidant may be used, or two or more types may be used. When there are two or more antioxidants, the total is preferably in the above range.
  • the temporary fixing adhesive of the present invention preferably contains a solvent.
  • a solvent any known solvent can be used without limitation, and an organic solvent is preferred.
  • organic solvents examples include ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, alkyl oxyacetate (examples) : Methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate)), 3-oxypropionic acid alkyl esters (example: 3 -Methyl oxypropionate, ethyl 3-oxypropionate, etc.
  • 2-oxy Alkyl propionate Stealth (eg, methyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc.
  • solvents are preferably mixed in two or more types from the viewpoint of improving the properties of the coated surface.
  • the content of the temporary fixing adhesive is preferably such that the total solid concentration of the temporary fixing adhesive is 5 to 80% by mass from the viewpoint of applicability. Is more preferably from 50 to 50% by weight, particularly preferably from 15 to 40% by weight.
  • One type of solvent may be sufficient and 2 or more types may be sufficient as it. When there are two or more solvents, the total is preferably in the above range.
  • the solvent content is preferably 1% by mass or less, and 0.1% by mass or less. More preferably, it is particularly preferable not to contain.
  • the temporary fixing adhesive of the present invention preferably contains a radically polymerizable compound.
  • a temporary fixing adhesive containing a radical polymerizable compound By using a temporary fixing adhesive containing a radical polymerizable compound, it is easy to suppress fluid deformation of the adhesive layer during heating. For this reason, for example, in the case of heat-treating the laminate after polishing the base material, the flow deformation of the adhesive layer during heating can be suppressed, and the occurrence of warpage can be effectively suppressed.
  • the adhesive layer with hardness can be formed, even if a pressure is locally applied at the time of grinding
  • the radical polymerizable compound is a compound having a radical polymerizable group, and a known radical polymerizable compound that can be polymerized by a radical can be used.
  • a radical polymerizable compound that can be polymerized by a radical
  • Such compounds are widely known in the art, and can be used without particular limitation in the present invention. These may be any of chemical forms such as monomers, prepolymers, oligomers or mixtures thereof and multimers thereof.
  • the description in paragraphs 00099 to 080 of JP-A-2015-087611 can be referred to, and the contents thereof are incorporated in the present specification.
  • radical polymerizable compound examples include urethane acrylates as described in JP-B-48-41708, JP-A-51-37193, JP-B-2-32293, and JP-B-2-16765. Also suitable are urethane compounds having an ethylene oxide skeleton as described in JP-B-58-49860, JP-B-56-17654, JP-B-62-39417, and JP-B-62-39418. Further, as radically polymerizable compounds, addition polymerization having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238 is described. Monomers can also be used.
  • radical polymerizable compounds include urethane oligomers UAS-10, UAB-140 (manufactured by Sanyo Kokusaku Pulp Co., Ltd.), NK ester M-40G, NK ester 4G, NK ester A-9300, NK ester M-9300, NK Ester A-TMMT, NK ester A-DPH, NK ester A-BPE-4, UA-7200 (manufactured by Shin-Nakamura Chemical), DPHA-40H (manufactured by Nippon Kayaku), UA-306H, UA-306T, UA -306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), Blemmer PME400 (manufactured by NOF Corporation), and the like.
  • the radically polymerizable compound preferably has at least one of the partial structures represented by the following (P-1) to (P-4) from the viewpoint of heat resistance. More preferably, it has a partial structure represented. * In the formula is a connecting hand.
  • radical polymerizable compound having the above partial structure examples include, for example, trimethylolpropane tri (meth) acrylate, isocyanuric acid ethylene oxide-modified di (meth) acrylate, isocyanuric acid ethylene oxide-modified tri (meth) acrylate, and isocyanuric acid.
  • the content in the case of adding a radical polymerizable compound is the mass of the temporary fixing adhesive excluding the solvent from the viewpoint of good adhesiveness, flat polishing property, peelability, and warpage suppression.
  • the content is preferably 1 to 50% by mass, more preferably 1 to 30% by mass, and still more preferably 5 to 30% by mass.
  • a radically polymerizable compound may be used alone or in combination of two or more.
  • the mass ratio of the elastomer and the radical polymerizable compound is in the above range, an adhesive layer excellent in adhesiveness, flat polishing property, peelability and warpage suppression can be formed.
  • the temporary tacking adhesive of the present invention has a polymer compound other than the above-described silicon-based liquid compound and elastomer as necessary in order to adjust applicability, adhesiveness, releasability, heat resistance, and the like. May be.
  • the coating property means the uniformity of the film thickness after coating and the film forming property after coating.
  • any polymer compound can be used.
  • the polymer compound is a compound that does not contain a polymerizable group.
  • the weight average molecular weight of the polymer compound is preferably 10,000 to 1,000,000, more preferably 50,000 to 500,000, and still more preferably 100,000 to 300,000.
  • the polymer compound include, for example, hydrocarbon resins, novolac resins, phenol resins, epoxy resins, melamine resins, urea resins, unsaturated polyester resins, alkyd resins, polyimide resins, polyvinyl chloride resins, and polyvinyl acetate resins. , Teflon (registered trademark), polyamide resin, polyacetal resin, polycarbonate resin, polyphenylene ether resin, polybutylene terephthalate resin, polyethylene terephthalate resin, polyphenylene sulfide resin, polysulfone resin, polyethersulfone resin, polyarylate resin, polyetheretherketone resin And polyamideimide resin.
  • hydrocarbon resins, novolak resins, and polyimide resins are preferable, and hydrocarbon resins are more preferable. You may use a high molecular compound in combination of 2 or more type as needed.
  • the hydrocarbon resin basically means a resin consisting of only carbon atoms and hydrogen atoms, but if the basic skeleton is a hydrocarbon resin, it may contain other atoms as side chains. That is, when a functional group other than a hydrocarbon group is directly bonded to the main chain, such as an acrylic resin, a polyvinyl alcohol resin, a polyvinyl acetal resin, or a polyvinyl pyrrolidone resin, in addition to a hydrocarbon resin consisting of only carbon atoms and hydrogen atoms. Are also included in the hydrocarbon resin in the present invention.
  • the content of the repeating unit in which the hydrocarbon group is directly bonded to the main chain is 30 mol% or more based on the entire repeating unit of the resin.
  • the hydrocarbon resin meeting the above conditions include terpene resin, terpene phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, and polymerized rosin.
  • Polymerized rosin ester modified rosin, rosin modified phenolic resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone petroleum resin, indene petroleum resin, etc.
  • the hydrocarbon resin is preferably a terpene resin, rosin, petroleum resin, hydrogenated rosin, or polymerized rosin, and more preferably a terpene resin or rosin.
  • a polymer compound having a non-three-dimensional crosslinked structure having fluorine atoms it is preferable to contain a polymer compound having a non-three-dimensional crosslinked structure having fluorine atoms.
  • the non-three-dimensional crosslinked structure means that the compound does not contain a crosslinked structure or the ratio of the crosslinked structure forming the three-dimensional crosslinked structure to the total crosslinked structure in the compound is 5% or less. % Or less is preferable.
  • a polymer composed of one or more fluorine-containing monofunctional monomers can be preferably used.
  • tetrafluoroethylene hexafluoropropene, tetrafluoroethylene oxide, hexafluoropropene oxide, perfluoroalkyl vinyl ether, chlorotrifluoroethylene, vinylidene fluoride, and perfluoroalkyl group-containing (meth) acrylic acid ester.
  • Homopolymers of one or more fluorine-containing monofunctional monomers or copolymers of these monomers copolymers of one or more fluorine-containing monofunctional monomers with ethylene, fluorine-containing monofunctional monomers And at least one fluorine-containing resin selected from a copolymer of one or more of these and chlorotrifluoroethylene.
  • the polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom is preferably a perfluoroalkyl group-containing (meth) acrylic resin that can be synthesized from a perfluoroalkyl group-containing (meth) acrylic acid ester.
  • the perfluoroalkyl group-containing (meth) acrylic acid ester is preferably a compound represented by the following formula (101).
  • R 101 , R 102 , and R 103 each independently represent a hydrogen atom, an alkyl group, or a halogen atom.
  • Y 101 represents a single bond or a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof.
  • Rf is a fluorine atom or a monovalent organic group having at least one fluorine atom.
  • examples of the alkyl group represented by R 101 , R 102 , R 103 are preferably alkyl groups having 1 to 8 carbon atoms, such as a methyl group, an ethyl group, a propyl group, Examples include octyl group, isopropyl group, tert-butyl group, isopentyl group, 2-ethylhexyl group, 2-methylhexyl group, cyclopentyl group and the like.
  • Examples of the aryl group are preferably aryl groups having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group.
  • R 101 to R 103 are preferably a hydrogen atom or a methyl group.
  • Y 101 represents a single bond or a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof.
  • the divalent aliphatic group is preferably a chain structure rather than a cyclic structure, and more preferably a straight chain structure than a branched chain structure.
  • the number of carbon atoms in the divalent aliphatic group is preferably 1-20, more preferably 1-15, still more preferably 1-12, and even more preferably 1-10. 1 to 8 is even more preferable, and 1 to 4 is particularly preferable.
  • Examples of the divalent aromatic group include a phenylene group, a substituted phenylene group, a naphthalene group, and a substituted naphthalene group, and a phenylene group is preferable.
  • Y 101 is preferably an aliphatic group having a divalent linear structure.
  • the monovalent organic group having a fluorine atom represented by Rf is not particularly limited, but is preferably a fluorinated alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and more preferably 1 to Fifteen fluorine-containing alkyl groups are particularly preferred.
  • This fluorine-containing alkyl group is a straight chain ⁇ for example, —CF 2 CF 3 , —CH 2 (CF 2 ) 4 H, —CH 2 (CF 2 ) 8 CF 3 , —CH 2 CH 2 (CF 2 ) 4 H, etc.
  • a branched structure ⁇ eg, —CH (CF 3 ) 2 , —CH 2 CF (CF 3 ) 2 , —CH (CH 3 ) CF 2 CF 3 , —CH (CH 3 ) (CF 2 ) 5 CF 2 H and the like ⁇ and an alicyclic structure (preferably a 5-membered or 6-membered ring such as a perfluorocyclohexyl group, a perfluorocyclopentyl group, or an alkyl group substituted with these).
  • An ether bond (for example, —CH 2 OCH 2 CF 2 CF 3 , —CH 2 CH 2 OCH 2 C 4 F 8 H, —CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , —CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H , etc.) may have. Further, it may be a perfluoroalkyl group.
  • the perfluoroalkyl group-containing (meth) acrylic resin has a repeating unit represented by the following formula (102).
  • R 101 , R 102 , R 103 , Y 101 , and Rf have the same meanings as those in general formula (101), and preferred embodiments are also the same.
  • a copolymer component can be selected in addition to the perfluoroalkyl group-containing (meth) acrylic acid ester from the viewpoint of peelability.
  • the radical polymerizable compound capable of forming a copolymer component include acrylic acid esters, methacrylic acid esters, N, N-2 substituted acrylamides, N, N-2 substituted methacrylamides, styrenes, and acrylonitriles. And radical polymerizable compounds selected from methacrylonitriles and the like.
  • acrylic esters eg, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate
  • alkyl acrylate the alkyl group preferably has 1 to 20 carbon atoms
  • aryl acrylates eg pheny
  • a commercially available polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom may be used.
  • Teflon registered trademark
  • DuPont Teflon
  • Tefzel DuPont
  • Fullon Asahi Glass
  • Halar SolvaySolexis
  • Heiler SolvaySolexis
  • Lumiflon Alignment
  • Afras Alignment
  • Cytop Align
  • Cefral Soft Central Glass Co., Ltd.
  • Cefral Coat Central Glass Co., Ltd.
  • Dionine Dionine
  • fluororesins Vuitton (DuPont Co., Ltd.), Kalrez (DuPont Co., Ltd.)
  • Various fluoro oils including perfluoropolyether oils such as fluoro rubber, Krytox (DuPont), Fomblin (Daitotech), Demnam (Daikin Industries), etc., and
  • the weight average molecular weight in terms of polystyrene in the gel permeation chromatography (GPC) method of the non-three-dimensional crosslinked polymer compound having a fluorine atom is preferably 100,000 to 2,000, more preferably 50,000 to 2,000. Most preferred is ⁇ 2000.
  • the temporary fixing adhesive of the present invention contains a polymer compound other than the above-described silicon-based liquid compound and elastomer
  • the content thereof is 0.01 to 60 with respect to the total solid content of the temporary fixing adhesive.
  • the content is preferably mass%, more preferably 0.05 to 50 mass%, and still more preferably 0.1 to 30 mass%.
  • the temporary fixing adhesive of the present invention may contain a surfactant.
  • the surfactant here does not contain a silicon-based liquid compound.
  • any of anionic, cationic, nonionic, or amphoteric surfactants can be used, but a preferred surfactant is a nonionic surfactant.
  • Preferable examples of nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, and fluorine surfactants.
  • the content of the surfactant in the temporary fixing adhesive is preferably 0.001 to 5% by mass, more preferably 0.005 to 1% by mass, based on the total solid content of the temporary fixing adhesive, from the viewpoint of applicability. 0.01 to 0.5% by mass is particularly preferable. Only one surfactant may be used, or two or more surfactants may be used. When there are two or more surfactants, the total is preferably in the above range.
  • the temporary fixing adhesive of the present invention preferably contains a fluorinated liquid compound.
  • the liquid compound means a compound having fluidity at 25 ° C. and having a viscosity of 1 to 100,000 mPa ⁇ s at 25 ° C., for example.
  • the viscosity of the fluorinated liquid compound at 25 ° C. is more preferably, for example, 10 to 20,000 mPa ⁇ s, and further preferably 100 to 15,000 mPa ⁇ s.
  • the viscosity of the fluorinated liquid compound tends to be unevenly distributed in the surface layer of the adhesive layer.
  • the fluorinated liquid compound can be preferably used in any form of oligomer or polymer. Moreover, the mixture of an oligomer and a polymer may be sufficient. Such a mixture may further comprise a monomer. Further, the fluorinated liquid compound may be a monomer.
  • the fluorine-based liquid compound is preferably an oligomer, a polymer, or a mixture thereof from the viewpoint of heat resistance and the like. Examples of the oligomer and polymer include a radical polymer, a cationic polymer, and an anionic polymer, and any of them can be preferably used. A vinyl polymer is particularly preferred.
  • the weight average molecular weight of the fluorinated liquid compound is preferably 500 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 20,000.
  • the fluorinated liquid compound is preferably a compound that is not denatured during the treatment of the substrate used for temporary adhesion.
  • a compound that can exist in a liquid state even after heating at 250 ° C. or higher or treating the substrate with various chemical solutions is preferable.
  • the viscosity at 25 ° C. is 1 to 100,000 mPa ⁇ s after heating to 250 ° C. under a temperature rising condition of 10 ° C./min from a state of 25 ° C. It is preferably 10 to 20,000 mPa ⁇ s, more preferably 100 to 15,000 mPa ⁇ s.
  • the fluorinated liquid compound having such characteristics is preferably a non-thermosetting compound having no reactive group.
  • the reactive group here refers to all groups that react by heating at 250 ° C., and examples thereof include a polymerizable group and a hydrolyzable group. Specifically, a (meth) acryl group, an epoxy group, an isocyanato group, etc. are mentioned, for example.
  • the 10% thermal mass reduction temperature raised from 25 ° C. at 20 ° C./min is preferably 250 ° C. or more, and more preferably 280 ° C. or more.
  • an upper limit does not have limitation in particular, For example, 1000 degrees C or less is preferable and 800 degrees C or less is more preferable. According to this aspect, it is easy to form an adhesive layer having excellent heat resistance.
  • mass decreasing temperature is a value measured on the said temperature rising conditions in nitrogen stream by the thermogravimetry apparatus (TGA).
  • the fluorinated liquid compound preferably contains a lipophilic group.
  • the lipophilic group include linear or branched alkyl groups, cycloalkyl groups, and aromatic groups.
  • the number of carbon atoms in the alkyl group is preferably 2 to 30, more preferably 4 to 30, further preferably 6 to 30, and particularly preferably 12 to 20.
  • alkyl groups include, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, octadecyl, isopropyl Group, isobutyl group, sec-butyl group, tert-butyl group, 1-ethylpentyl group, 2-ethylhexyl group.
  • the alkyl group may have a substituent.
  • Examples of the substituent include a halogen atom, an alkoxy group, and an aromatic group.
  • Examples of the halogen atom include a chlorine atom, a fluorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
  • the alkoxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms.
  • the alkoxy group is preferably linear or branched.
  • the aromatic group may be monocyclic or polycyclic.
  • the carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and most preferably 6 to 10.
  • the cycloalkyl group may be monocyclic or polycyclic.
  • the cycloalkyl group preferably has 3 to 30 carbon atoms, more preferably 4 to 30 carbon atoms, still more preferably 6 to 30 carbon atoms, and most preferably 6 to 20 carbon atoms.
  • Examples of the monocyclic cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group.
  • Examples of the polycyclic cycloalkyl group include adamantyl group, norbornyl group, bornyl group, camphenyl group, decahydronaphthyl group, tricyclodecanyl group, tetracyclodecanyl group, camphoroyl group, dicyclohexyl group and pinenyl group. Can be mentioned.
  • the cycloalkyl group may have the substituent described above.
  • the aromatic group may be monocyclic or polycyclic.
  • the carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and most preferably 6 to 10. It is preferable that the aromatic group does not contain a hetero atom (for example, a nitrogen atom, an oxygen atom, a sulfur atom, etc.) in the elements constituting the ring.
  • aromatic group examples include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acetaphthalene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene ring , Triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, thiazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, Benzothiophene ring, isobenzofuran ring, quinol
  • the fluorinated liquid compound may be a compound containing only one kind of lipophilic group, or may contain two or more kinds.
  • the lipophilic group may contain a fluorine atom. That is, the fluorinated liquid compound in the present invention may be a compound in which only the lipophilic group contains a fluorine atom.
  • a compound further having a group containing a fluorine element also referred to as a fluorine group
  • it is a compound containing a lipophilic group and a fluorine group.
  • the fluorinated liquid compound is a compound having a lipophilic group and a fluorine group
  • the lipophilic group may or may not contain a fluorine atom, but the lipophilic group contains a fluorine atom. Preferably it is not.
  • the fluorinated liquid compound has at least one lipophilic group in one molecule, preferably 2 to 100, particularly preferably 6 to 80.
  • the fluorine group a known fluorine group can be used. Examples thereof include a fluorine-containing alkyl group and a fluorine-containing alkylene group. Of the fluorine groups, those that function as lipophilic groups are included in the lipophilic groups.
  • the carbon number of the fluorine-containing alkyl group is preferably 1 to 30, more preferably 1 to 20, and more preferably 1 to 15.
  • the fluorine-containing alkyl group may be linear, branched or cyclic. Moreover, you may have an ether bond.
  • the fluorine-containing alkyl group may be a perfluoroalkyl group in which all of the hydrogen atoms are substituted with fluorine atoms.
  • the carbon number of the fluorine-containing alkylene group is preferably 2 to 30, more preferably 2 to 20, and more preferably 2 to 15.
  • the fluorine-containing alkylene group may be linear, branched or cyclic. Moreover, you may have an ether bond.
  • the fluorine-containing alkylene group may be a perfluoroalkylene group in which all of the hydrogen atoms are substituted with fluorine atoms.
  • the fluorine-containing liquid compound preferably has a fluorine atom content of 1 to 90% by mass, more preferably 2 to 80% by mass, and still more preferably 5 to 70% by mass.
  • the content of fluorine atoms is defined as “ ⁇ (number of fluorine atoms in one molecule ⁇ mass of fluorine atoms) / mass of all atoms in one molecule ⁇ ⁇ 100”.
  • a commercially available product can be used as the fluorinated liquid compound.
  • F-251, F-281, F-477, F-553, F-554, F-555, F-557, F-558, F-559, F -560, F-561, F-563, F-565, F-567, F-568, F-571, R-40, R-41, R-43, R-94 710F, 710FM, 710FS, 730FL, and 730LM are preferred.
  • the temporary fixing adhesive of the present invention when a fluorinated liquid compound is used, its content is preferably 0.01 to 10% by mass relative to the mass of the temporary fixing adhesive excluding the solvent. More preferably, the content is 0.02 to 5% by mass.
  • the lower limit is preferably 0.03% by mass or more.
  • the upper limit is preferably 1% by mass or less, and more preferably less than 0.5% by mass. If content of a fluorine-type liquid compound is the said range, it is excellent in adhesiveness and peelability.
  • One type of fluorine-based liquid compound may be used alone, or two or more types may be used in combination. When using 2 or more types together, it is preferable that total content is the said range.
  • the temporary fixing adhesive in the present invention is within the range that does not impair the effects of the present invention, and various additives, for example, plasticizers, curing agents, catalysts other than the above, fillers, adhesion promoters, ultraviolet absorbers, if necessary. Agents, anti-aggregation agents, elastomers and other polymer compounds can be blended.
  • the blending amount is preferably 3% by mass or less, more preferably 1% by mass or less, based on the total solid content of the temporary fixing adhesive.
  • the lower limit when blending is preferably 0.0001% by mass or more.
  • the total amount of these additives is preferably 10% by mass or less, more preferably 3% by mass or less, based on the total solid content of the temporary adhesive.
  • the lower limit of the total blending amount when blending these components is preferably 0.0001% by mass or more.
  • the temporary fixing adhesive in the present invention preferably does not contain impurities such as metals.
  • the content of impurities contained in the adhesive is preferably 1 ppm or less, more preferably 1 ppb or less, still more preferably 100 ppt or less, even more preferably 10 ppt or less, and substantially not contained (below the detection limit of the measuring apparatus).
  • Examples of a method for removing impurities such as metals from the temporary fixing adhesive include filtration using a filter.
  • the filter pore diameter is preferably 10 nm or less, more preferably 5 nm or less, and still more preferably 3 nm or less.
  • the filter material is preferably a polytetrafluoroethylene, polyethylene, or nylon filter.
  • a plurality of types of filters may be connected in series or in parallel.
  • filters having different hole diameters and / or materials may be used in combination.
  • the adhesive may be filtered a plurality of times, and the step of filtering a plurality of times may be a circulation filtration step.
  • a raw material having a low metal content is selected as a raw material constituting the temporary fixing adhesive.
  • Examples of the method include filtering and performing distillation under conditions where the inside of the apparatus is lined with polytetrafluoroethylene or the like and contamination is suppressed as much as possible.
  • the preferable conditions for filter filtration performed on the raw materials constituting the temporary fixing adhesive are the same as those described above.
  • impurities may be removed using an adsorbent, or filter filtration and adsorbent may be used in combination.
  • adsorbent known adsorbents can be used.
  • inorganic adsorbents such as silica gel and zeolite
  • organic adsorbents such as activated carbon can be used.
  • the temporary fixing adhesive of the present invention can be prepared by mixing the above-described components.
  • the mixing of each component is usually performed in the range of 0 ° C to 100 ° C.
  • the filtered liquid can also be refiltered. Any filter can be used without particular limitation as long as it has been conventionally used for filtration.
  • fluororesins such as polytetrafluoroethylene (PTFE), polyamide resins such as nylon-6 and nylon-6,6, polyolefin resins such as polyethylene and polypropylene (PP) (polyolefin resins with high density and ultra high molecular weight)
  • a filter using a material such as a material such as
  • polypropylene (including high density polypropylene) and nylon are preferable.
  • the pore size of the filter is suitably about 0.003 to 5.0 ⁇ m, for example. By setting it within this range, it becomes possible to reliably remove fine foreign matters such as impurities and aggregates contained in the composition while suppressing filtration clogging.
  • filters different filters may be combined.
  • the filtering by the first filter may be performed only once or may be performed twice or more.
  • the second and subsequent hole diameters are the same or smaller than the first filtering hole diameter.
  • the pore diameter here can refer to the nominal value of the filter manufacturer.
  • a commercially available filter for example, it can be selected from various filters provided by Nippon Pole Co., Ltd., Advantech Toyo Co., Ltd., Japan Entegris Co., Ltd. (formerly Japan Microlith Co., Ltd.) or KITZ Micro Filter Co., Ltd. .
  • the temporary fix adhesive of the present invention can form an adhesive layer excellent in adhesiveness and peelability. For this reason, for example, when mechanical or chemical treatment is performed on the device wafer, the device wafer and the support can be stably temporarily bonded together, and the temporary bonding to the device wafer can be easily released.
  • the temporary fixing adhesive of the present invention can be suitably used as a temporary fixing adhesive for manufacturing a semiconductor device.
  • the adhesive film of the present invention has an adhesive layer made of the temporary adhesive of the present invention.
  • the silicon-based liquid compound is unevenly distributed in the surface layer of the adhesive layer. For this reason, it is excellent in peelability.
  • the adhesive layer contains an elastomer, excellent adhesiveness can be obtained by following the fine irregularities of the support and the substrate and by an appropriate anchor effect. For this reason, both adhesiveness and peelability can be achieved.
  • the concentration of the silicon-based liquid compound exceeds 5% in the thickness direction and the region in the range of 5% of the thickness of the adhesive layer from either surface of the adhesive layer.
  • the concentration of the silicon-based liquid compound in the adhesive layer can be determined by combining, for example, a method of performing X-ray photoelectron spectroscopy (ESCA) measurement while performing etching, or oblique cutting and time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurement. It can be measured by the method.
  • ESA X-ray photoelectron spectroscopy
  • TOF-SIMS time-of-flight secondary ion mass spectrometry
  • the solvent content of the adhesive film of the present invention is preferably 1% by mass or less, more preferably 0.1% by mass or less, and particularly preferably not contained.
  • the solvent content of the adhesive film can be measured by a gas chromatography method.
  • the average thickness of the adhesive layer is not particularly limited, but is preferably 0.1 to 500 ⁇ m, more preferably 0.1 to 200 ⁇ m, still more preferably 10 to 200 ⁇ m, and 50 Particularly preferred is ⁇ 200 ⁇ m.
  • the average thickness of the adhesive layer is in the above range, it is easy to obtain an adhesive film having excellent flatness.
  • the average thickness of the adhesive layer is defined as the average value of five points measured by ellipsometry.
  • the adhesive film of the present invention may be a single adhesive layer or may have other layers on one or both sides of the adhesive layer.
  • An example of the other layer is a release layer.
  • the average thickness of the release layer is preferably 0.001 to 1 ⁇ m, and more preferably 0.01 to 0.5 ⁇ m. If it is the said range, while an adhesive film has moderate adhesive force and adhesiveness with a base material or a support body is good, an adhesive film can be easily peeled from a base material or a support body.
  • the average thickness of the release layer is defined as the average value of five points measured by ellipsometry.
  • the release layer preferably contains a compound containing a fluorine atom.
  • the adhesive film of this invention is good also as a structure which does not have a mold release layer. This is because the adhesive layer itself made of the temporary adhesive in the present invention has peelability.
  • the adhesive film of this invention is good also as a "adhesive film with a release film" by sticking a release film on the single side
  • a long adhesive film is roll shape. It is possible to prevent troubles that the surface of the adhesive layer is scratched or sticks during storage when it is rolled up.
  • the release film can be peeled off when used. For example, in the case where the release film is bonded on both sides, by peeling off the release film on one side, laminating the adhesive surface to a substrate or support, and then peeling off the remaining release film, The sheet surface can be kept as clean as possible.
  • the adhesive film of the present invention can be produced by a conventionally known method.
  • it can be produced by a melt film forming method, a solution film forming method or the like.
  • the melt film forming method realizes fluidity by heating and melting the raw material composition, and forming this melt into a sheet using an extrusion molding apparatus or an injection molding apparatus, and cooling it to form a film (sheet) Is the way to get.
  • a roll-like long film can be obtained.
  • high film thickness accuracy can be obtained.
  • Other additives can also be added by mixing, melting and stirring.
  • a release film may be bonded to one side or both sides of the film to form an “adhesive film with a release film”.
  • the solution casting method realizes fluidity by dissolving the raw material composition with a solvent, and coats this solution on a support such as a film, drum or band to form a sheet, and then the film (sheet) ).
  • a support such as a film, drum or band
  • To apply apply the solution by extruding the solution with pressure from the slit-shaped opening, transferring the solution with a gravure or an aronics roller, and scanning while discharging the solution from a spray or dispenser. Examples include coating methods, dip coating by storing the solution in a tank and passing it through a film, drum or band, and coating by scraping the solution with a wire bar. .
  • a single film can be obtained by coating the solution on the support, then drying to form a solid sheet, and then mechanically peeling the sheet from the support.
  • a release layer may be applied on the support in advance by applying a release layer, immersion treatment, gas treatment, electromagnetic wave irradiation treatment, plasma irradiation treatment, or the like. Or it is good also as an "adhesive film with a release film", leaving a film as it is, without peeling off from a support body, and the sheet
  • a release film may be bonded to both sides of the adhesive film to form a “sheet with a double-sided release film”.
  • the adhesive support body of this invention has a support body and the contact bonding layer which consists of a temporary fix
  • the adhesive layer preferably includes the elastomer X and the elastomer Y described above as the elastomer.
  • the average thickness of the adhesive layer varies depending on the application, but is preferably, for example, 0.1 to 500 ⁇ m.
  • the adhesive layer is applied to the support surface by applying the temporary adhesive of the present invention using a spin coating method, a spray method, a roller coating method, a flow coating method, a doctor coating method, a dipping method, or the like, and is dried (baked). Can be formed.
  • the average thickness of the adhesive layer in this case is not particularly limited, but is preferably 1 to 100 ⁇ m, and more preferably 1 to 10 ⁇ m.
  • the adhesive layer can also be formed by laminating the above-described adhesive film of the present invention on a support. By forming an adhesive layer using an adhesive film, an adhesive layer can be formed even with materials such as elastomers that are poorly soluble in solvents, so an adhesive layer with excellent heat resistance and chemical resistance is formed. Cheap. In addition, a thick adhesive layer having a thickness of 10 ⁇ m or more can be made flat without thickness unevenness.
  • the average thickness of the adhesive layer in this case is not particularly limited, but is preferably 0.1 to 200 ⁇ m, more preferably 10 to 200 ⁇ m, and particularly preferably 50 to 200 ⁇ m.
  • an adhesive film for example, set the adhesive film on a vacuum laminator, place the adhesive film on the support with this device, and support the adhesive film and the support under vacuum.
  • a method of fixing (laminating) an adhesive film to a support by bringing the body into contact with each other and pressing with a roller or the like.
  • the adhesive layer has a region where the concentration of the silicon-based liquid compound is 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support. It is preferable to be higher than the region in the range of more than 5% and 50% in the thickness direction of the adhesive layer from the surface. According to this aspect, the peelability is improved when the adhesive support is temporarily bonded to a substrate such as a device wafer and then peeled from the device wafer. Furthermore, the adhesive layer can be easily removed from the surface of the substrate or device wafer by a method such as mechanical peeling.
  • the concentration of the silicon-based liquid compound ranges from 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support to more than 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support. It is preferably more than 10% by mass and more preferably more than 30% by mass than the region in the range of 50%.
  • the support (also referred to as a carrier support) is not particularly limited, and examples thereof include a silicon substrate, a glass substrate, a metal substrate, and a compound semiconductor substrate.
  • a silicon substrate in view of the point that it is difficult to contaminate a silicon substrate typically used as a substrate of a semiconductor device and the point that an electrostatic chuck widely used in the manufacturing process of a semiconductor device can be used, it is a silicon substrate.
  • the thickness of the support is not particularly limited, but is preferably 300 ⁇ m to 100 mm, and more preferably 300 ⁇ m to 10 mm.
  • the support may have a release layer on its surface.
  • the support may be a support with a release layer having a release layer on the surface of a substrate such as a silicon substrate.
  • the release layer is preferably a low surface energy layer containing fluorine atoms and / or silicon atoms, and preferably has a material containing fluorine atoms and / or silicon atoms.
  • the fluorine content of the release layer is preferably 30 to 80% by mass, more preferably 40 to 76% by mass, and particularly preferably 60 to 75% by mass.
  • the material for the release layer the same material as the release layer that may be formed on the surface layer of the adhesive film described above can be used.
  • the laminate of the present invention has a support, an adhesive layer made of the temporary fixing adhesive of the present invention, and a substrate.
  • a support an adhesive layer made of the temporary fixing adhesive of the present invention
  • a substrate a substrate that is an adhesive layer made of the temporary fixing adhesive of the present invention.
  • FIGS preferred embodiments of the laminate of the present invention will be described with reference to FIGS. Needless to say, embodiments of the laminate of the present invention are not limited to these embodiments. 1 and 2, reference numeral 1 denotes a base material, 2 denotes a support, and 3, 3A and 3B denote adhesive layers.
  • the adhesive layer 3 is located on the surface of the support 2, and the substrate 1 is on the surface opposite to the support of the adhesive layer 3. It is the mode which is located.
  • the adhesive layer 3 is provided between the base material and the support, and the adhesive layer 3 is in contact with the base material and the support in terms of improving the throughput of forming the laminate. That is, in the laminate, an embodiment in which the above-described release layer is not included between the base material and the support, and only the adhesive layer is exemplified.
  • the peel strength A between the support and the adhesive layer made of the temporary adhesive of the present invention, and the peel strength B of the adhesive layer made of the temporary adhesive of the present invention and the substrate are as follows: It is preferable to satisfy the following formulas (1) and (2).
  • peel strength A and the peel strength B peel from the interface between the support and the adhesive layer made of the temporary fixing adhesive of the present invention can do.
  • the peel strength B is preferably 3 N / cm or less, and more preferably 2 N / cm or less.
  • the peel strength in the present invention is a value obtained by measuring the strength when pulled up in the 90 ° direction.
  • Peel strength A represents the force applied when the substrate is fixed and the end of the support is pulled up in the 90 ° direction at a speed of 50 mm / min.
  • the peel strength B represents the force applied when the substrate is fixed and the film-like adhesive layer is pulled up in the 90 ° direction at a speed of 50 mm / min.
  • the adhesive layer made of the temporary adhesive of the present invention is peeled from the interface between the base material and the adhesive layer, In the range of 50% or more of the area of the peeled surface, the residue of the silicon-based liquid compound is adhered, or the adhesive layer is peeled from the interface between the support and the adhesive layer, and the adhesive layer of the support In the range of 50% or more of the area of the peeled surface, the residue of the silicon-based liquid compound is preferably attached.
  • the residue derived from an elastomer does not adhere in the range of 50% or more of the area of the peeling surface, and more preferably does not adhere in a range of 99% or more.
  • Residues of silicon-based liquid compounds and elastomer-derived residues can be observed by visual observation, optical microscope, scanning electron microscope, X-ray photoelectron spectroscopy, etc. In the present invention, the peeled surface is measured by X-ray photoelectron spectroscopy. Shall be.
  • “residue of silicon-based liquid compound” is a silicon-based liquid compound component of the adhesive layer
  • “residue derived from elastomer” means an elastomer component of the adhesive layer.
  • the laminate of the present invention can be produced by thermocompression bonding the surface of the adhesive support of the present invention described above on which the adhesive layer is formed and the substrate.
  • the pressure bonding conditions are preferably, for example, a temperature of 100 to 200 ° C., a pressure of 0.01 to 1 MPa, and a time of 1 to 15 minutes.
  • 2nd embodiment of the laminated body of this invention is an aspect shown in FIG. 2, Comprising: The support body 2, adhesive layer 3A, and the base material 1 are laminated
  • the substrate 1 and the adhesive layer 3A, the adhesive layer 3A and the second adhesive layer 3B, and the second adhesive layer 3B and the support 2 are preferably in contact with each other on the surface.
  • the support 2, the adhesive layer 3 ⁇ / b> A, and the substrate 1 are laminated in the above order, and the adhesive layer is between the adhesive layer 3 ⁇ / b> A and the substrate.
  • the second adhesive layer has a different composition.
  • the support 2 and the adhesive layer 3A, the adhesive layer 3A and the second adhesive layer 3B, and the second adhesive layer 3B and the substrate are preferably in contact with each other on the surface.
  • the second adhesive layer 3B is not particularly defined as long as it is an adhesive layer having a composition different from that of the adhesive layer 3A made of the temporary adhesive of the present invention. Therefore, the second adhesive layer 3B may also be an adhesive layer made of the same components as the temporary fixing adhesive of the present invention. However, in this case, the adhesive layer 3A and the adhesive layer 3B have different compositions. In the present invention, it is preferable that the second adhesive layer contains an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units. By using such an adhesive layer, the adhesiveness can be further improved.
  • the content of the compound that is liquid at 25 ° C. and contains silicon atoms in the second adhesive layer is the compound that is liquid at 25 ° C. and contains silicon atoms contained in the adhesive layer It is preferable that it is 10 mass% or less of content of.
  • it becomes easier to adjust the peeling interface.
  • the base material (device wafer) / second adhesive layer / adhesive layer / support (carrier) comprising the temporary fixing adhesive of the present invention it is necessary for peeling between the base material and the second adhesive layer. If the force is larger than the force necessary to peel between the adhesive layer made of the temporary adhesive of the present invention and the support, the adhesive layer made of the temporary adhesive of the present invention will Can be peeled off.
  • the 2nd contact bonding layer in this invention contains the elastomer Y which contains the repeating unit derived from styrene in the ratio of 10 mass% or more and less than 50 mass% in all the repeating units.
  • the curvature of a wafer can be suppressed effectively.
  • the elastomer X and the elastomer Y, and the blending ratio thereof are synonymous with those described in the temporary fixing adhesive of the present invention, and the preferred ranges are also the same.
  • the fourth embodiment of the laminate of the present invention is an aspect having other layers in the first to third embodiments.
  • Examples of other layers include layers called release layers, release layers, or separation layers.
  • release layers for example, the description in paragraphs 0025 to 0055 of JP 2014-212292 A can be referred to, and the contents thereof are incorporated in the present specification.
  • separation layer the description in paragraphs 0069 to 0124 of International Publication No. WO2013 / 064417 can be referred to, and the contents thereof are incorporated in the present specification.
  • a device wafer is preferably used as the substrate.
  • a known device wafer can be used without limitation, and examples thereof include a silicon substrate and a compound semiconductor substrate.
  • Specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.
  • a mechanical structure or a circuit may be formed on the surface of the device wafer. Examples of device wafers on which mechanical structures and circuits are formed include MEMS (Micro Electro Mechanical Systems), power devices, image sensors, micro sensors, light emitting diodes (LEDs), optical devices, interposers, embedded devices, and micro devices. Etc.
  • the device wafer preferably has a structure such as a metal bump.
  • the height of the structure is not particularly limited, but is preferably 1 to 150 ⁇ m, for example, and more preferably 5 to 100 ⁇ m.
  • the film thickness of the device wafer before the mechanical or chemical treatment is preferably 500 ⁇ m or more, more preferably 600 ⁇ m or more, and still more preferably 700 ⁇ m or more.
  • the upper limit is preferably 2000 ⁇ m or less, and more preferably 1500 ⁇ m or less.
  • the film thickness of the device wafer after thinning by mechanical or chemical treatment is preferably less than 500 ⁇ m, more preferably 400 ⁇ m or less, and even more preferably 300 ⁇ m or less.
  • the lower limit is preferably 1 ⁇ m or more, and more preferably 5 ⁇ m or more.
  • the support is synonymous with the support described in the adhesive support described above, and the preferred range is also the same.
  • the adhesive layer 3A may be provided on the base material, and the adhesive layer 3B may be provided on the support to be bonded.
  • the adhesive layer 3A and the adhesive layer 3B may be the same or different. If they are different, change the type of compound containing silicon atoms, or change the type and amount of other additives such as compounds containing lipophilic groups and fluorine atoms. And the peeling selectivity at the interface between the support and the peeling force can be adjusted as appropriate.
  • it can also manufacture by arrange
  • the adhesive layer of the present invention is formed on one of the support and the substrate using the temporary adhesive of the present invention, and the temporary adhesive of the present invention is formed on the other of the support and the substrate.
  • the adhesive layer can be formed by using the other temporary fixing adhesive described above, and the surfaces on which the support layer and the adhesive layer of the base material are formed can be thermocompression-bonded. According to this method, since the adhesive layers are bonded together, the support and the substrate can be bonded together with good embedding properties.
  • the adhesive layer 3 ⁇ / b> A and the adhesive layer 3 ⁇ / b> B are each one of the support and the base material using the temporary adhesive of the present invention and the other temporary adhesive described above. It can also be produced by forming an adhesive layer including at least one layer, placing the other of the support and the substrate on the adhesive layer, and thermocompression-bonding the support and the substrate.
  • FIGS. 3A and 3E are schematic cross-sectional views (FIGS. 3A and 3B) for explaining the temporary bonding between the support and the device wafer, respectively, and the device wafer temporarily bonded to the support.
  • FIG. 3C The thinned state
  • FIG. 3D The thinned state
  • FIG. 3E the state after the adhesive layer is removed from the device wafer
  • an adhesive support 100 in which an adhesive layer 11 is provided on a support 12 is prepared. It is preferable that the adhesive layer 11 is an embodiment that does not substantially contain a solvent.
  • the device wafer 60 (base material) is formed by providing a plurality of device chips 62 on a surface 61 a of a silicon substrate 61.
  • the thickness of the silicon substrate 61 is preferably 200 to 1200 ⁇ m, for example.
  • the device chip 62 is preferably a metal structure, for example, and the height is preferably 10 to 100 ⁇ m.
  • a step of cleaning the support 12 or the back surface of the device wafer 60 with a solvent may be provided.
  • the contamination of the apparatus can be prevented and the thickness can be reduced.
  • the TTV (Total Thickness Variation) of the device wafer can be reduced.
  • the solvent used in the step of cleaning the support 12 or the back surface of the device wafer 60 with a solvent the solvent contained in the above-described temporary fixing adhesive can be used.
  • the adhesive layer 11 preferably completely covers the device chip 62, and preferably satisfies the relationship of “X + 100 ⁇ Y> X” when the height of the device chip is X ⁇ m and the thickness of the adhesive layer is Y ⁇ m.
  • the fact that the adhesive layer 11 completely covers the device chip 62 is effective when it is desired to further reduce the TTV (Total Thickness Variation) of the thin device wafer (that is, when the flatness of the thin device wafer is to be further improved). It is.
  • the plurality of device chips 62 are protected by the adhesive layer 11, so that it is possible to almost eliminate the uneven shape on the contact surface with the support 12. Therefore, even if the thickness is reduced in such a supported state, the possibility that the shape derived from the plurality of device chips 62 is transferred to the back surface 61b1 of the thin device wafer is reduced, and as a result, the thin device finally obtained The TTV of the wafer can be further reduced.
  • the back surface 61b of the silicon substrate 61 is subjected to mechanical or chemical treatment (though not particularly limited, for example, thinning treatment such as grinding or chemical mechanical polishing (CMP)). , Chemical vapor deposition (CVD), physical vapor deposition (PVD) and other high-temperature / vacuum treatments, treatments using chemicals such as organic solvents, acidic treatment solutions and basic treatment solutions, plating treatments, actinic rays 3) to reduce the thickness of the silicon substrate 61 (for example, the average thickness is preferably less than 500 ⁇ m, preferably 1 to 200 ⁇ m). More preferably, a thin device wafer 60a is obtained.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • other high-temperature / vacuum treatments treatments using chemicals such as organic solvents, acidic treatment solutions and basic treatment solutions
  • plating treatments actinic rays 3
  • the protruding adhesive layer is removed using a solvent that dissolves the adhesive layer, whereby the treatment under high temperature and vacuum is directly applied to the adhesive layer. Deformation and alteration of the adhesive layer can be prevented.
  • the solvent used in the step of washing the adhesive layer protruding outside the area of the substrate surface of the device wafer with a solvent the solvent contained in the temporary adhesive can be used.
  • the area of the film surface of the adhesive layer is preferably smaller than the area of the substrate surface of the support.
  • the diameter of the substrate surface of the support is C ⁇ m
  • the diameter of the substrate surface of the device wafer is D ⁇ m
  • the diameter of the film surface of the adhesive layer is T ⁇ m, (C-200) ⁇ T ⁇ D It is more preferable to satisfy.
  • the diameter of the substrate surface of the support is C ⁇ m
  • the diameter of the substrate surface of the device wafer is D ⁇ m
  • the diameter of the film surface in contact with the support of the adhesive layer is T C ⁇ m
  • the device wafer of the adhesive layer is
  • T D ⁇ m it is preferable that (C-200) ⁇ T C > T D ⁇ D.
  • the area of the film surface of the adhesive layer refers to the area when viewed from the direction perpendicular to the support, and the film surface is not considered uneven.
  • the substrate surface of the device wafer is, for example, a surface corresponding to the surface 61a in FIG.
  • the diameter of the substrate surface of the support and the diameter of the substrate surface of the device wafer refer to the diameter of the surface in contact with the adhesive layer.
  • regulated as a "diameter" about a support body etc. it is not essential that a support body etc. are circular (perfect circle) in a mathematical meaning, and what is necessary is just circular. If it is not a perfect circle, the diameter when converted to a perfect circle of the same area is taken as the diameter.
  • a through hole (not shown) penetrating the silicon substrate is formed from the back surface 61b1 of the thin device wafer 60a after the thinning process, and a silicon through electrode ( A process of forming (not shown) may be performed.
  • Heat treatment may be performed after the support 12 and the device wafer 60 are temporarily bonded to each other and then peeled off.
  • heat treatment may be performed in a mechanical or chemical treatment.
  • the maximum temperature achieved in the heat treatment is preferably 80 to 400 ° C, more preferably 130 ° C to 400 ° C, and still more preferably 180 ° C to 350 ° C.
  • the highest temperature achieved in the heat treatment is preferably lower than the decomposition temperature of the adhesive layer.
  • the heat treatment is preferably performed for 30 seconds to 30 minutes at the highest temperature, and more preferably for 1 minute to 10 minutes at the highest temperature.
  • the support 12 is detached from the thin device wafer 60a.
  • the method of detachment is not particularly limited, but it is preferable that the separation is performed by pulling up from the end of the thin device wafer 60a in a direction perpendicular to the thin device wafer 60a without any treatment.
  • the peeling interface is preferably peeled off at the interface between the support 12 and the adhesive layer 11.
  • the peel strength A at the interface between the support 12 and the adhesive layer 11 and the peel strength B between the device wafer surface 61a and the adhesive layer 11 preferably satisfy the following expressions.
  • the adhesive layer 11 is brought into contact with a stripping solution described later, and then, if necessary, the thin device wafer 60a is slid with respect to the support 12 and then the end of the thin device wafer 60a is applied to the device wafer. It can also be peeled off by pulling up in the vertical direction.
  • the stripping solution water and a solvent (organic solvent) can be used.
  • dissolves the contact bonding layer 11 is preferable.
  • organic solvent examples include aliphatic hydrocarbons (hexane, heptane, isoper E, H, G (manufactured by Esso Chemical Co., Ltd.), limonene, para-menthane, nonane, decane, dodecane, decalin, etc.), aromatic Hydrocarbons (toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene, n-butylbenzene, sec-butylbenzene, isobutylbenzene, tert-butylbenzene, amylbenzene, isoamylbenzene, (2,2-dimethylpropyl ) Benzene, 1-phenylhexane, 1-phenylheptane, 1-phenyloctane, 1-phenylnonane, 1-phenyldecane, cyclopropylbenzene, cyclohex
  • Particularly polar solvents include alcohols (methanol, ethanol, propanol, isopropanol, 1-butanol, 1-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 2-octanol, 2-ethyl-1-hexanol, 1-nonanol, 1-decanol, benzyl alcohol, ethylene glycol monomethyl ether, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol Monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl Ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, propylene glycol monophenyl ether, methylphenyl carbinol,
  • the stripping solution may contain an alkali, an acid, and a surfactant.
  • the blending amount is preferably 0.1 to 5.0% by mass of the stripping solution.
  • a form in which two or more organic solvents and water, two or more alkalis, an acid, and a surfactant are mixed is also preferable.
  • alkali examples include tribasic sodium phosphate, tribasic potassium phosphate, tribasic ammonium phosphate, dibasic sodium phosphate, dibasic potassium phosphate, dibasic ammonium phosphate, sodium carbonate, potassium carbonate, and ammonium carbonate.
  • Inorganic alkali agents such as sodium bicarbonate, potassium bicarbonate, ammonium bicarbonate, sodium borate, potassium borate, ammonium borate, sodium hydroxide, ammonium hydroxide, potassium hydroxide and lithium hydroxide, monomethylamine, Dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanol Min, monoisopropanolamine, diisopropanolamine, ethyleneimine, ethylenediamine, pyridine, may be used an organic alkali agent such as tetramethylammonium hydroxide. These alkali agents can be used alone or in combination of two or more.
  • Acids include inorganic acids such as hydrogen halides, sulfuric acid, nitric acid, phosphoric acid, boric acid, methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, para-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid Organic acids such as formic acid, gluconic acid, lactic acid, oxalic acid and tartaric acid can be used.
  • inorganic acids such as hydrogen halides, sulfuric acid, nitric acid, phosphoric acid, boric acid, methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, para-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid
  • Organic acids such as formic acid, gluconic acid, lactic acid, oxalic acid and tartaric acid
  • an anionic, cationic, nonionic or zwitterionic surfactant can be used as the surfactant.
  • the content of the surfactant is preferably 1 to 20% by mass and more preferably 1 to 10% by mass with respect to the total amount of the alkaline aqueous solution.
  • anionic surfactant examples include, but are not limited to, fatty acid salts, abietic acid salts, hydroxyalkane sulfonic acid salts, alkane sulfonic acid salts, dialkyl sulfosuccinic acid salts, linear alkyl benzene sulfonic acid salts, branched alkyl benzene sulfonic acid salts, Alkylnaphthalene sulfonates, alkyl diphenyl ether (di) sulfonates, alkylphenoxy polyoxyethylene alkyl sulfonates, polyoxyethylene alkyl sulfophenyl ether salts, N-alkyl-N-oleyl taurine sodium, N-alkyl sulfosuccinic acid Monoamide disodium salts, petroleum sulfonates, sulfated castor oil, sulfated beef oil, sulfate esters of fatty acid alkyl
  • the cationic surfactant is not particularly limited, and conventionally known cationic surfactants can be used. Examples thereof include alkylamine salts, quaternary ammonium salts, alkyl imidazolinium salts, polyoxyethylene alkylamine salts, and polyethylene polyamine derivatives.
  • the nonionic surfactant is not particularly limited, but is a polyethylene glycol type higher alcohol ethylene oxide adduct, alkylphenol ethylene oxide adduct, alkyl naphthol ethylene oxide adduct, phenol ethylene oxide adduct, naphthol ethylene oxide adduct, fatty acid.
  • Ethylene oxide adduct polyhydric alcohol fatty acid ester ethylene oxide adduct, higher alkylamine ethylene oxide adduct, fatty acid amide ethylene oxide adduct, fat and oil ethylene oxide adduct, polypropylene glycol ethylene oxide adduct, dimethylsiloxane-ethylene oxide block Copolymer, dimethylsiloxane- (propylene oxide-ethylene oxide) block copolymer , Fatty acid esters of polyhydric alcohol type glycerol, fatty acid esters of pentaerythritol, fatty acid esters of sorbitol and sorbitan, fatty acid esters of sucrose, alkyl ethers of polyhydric alcohols, fatty acid amides of alkanolamines.
  • those having an aromatic ring and an ethylene oxide chain are preferable, and an alkyl-substituted or unsubstituted phenol ethylene oxide adduct or an alkyl-substituted or unsubstituted naphthol ethylene oxide adduct is more preferable.
  • Zwitterionic surfactants include, but are not limited to, amine oxides such as alkyldimethylamine oxide, betaines such as alkylbetaines, and amino acids such as sodium alkylamino fatty acids.
  • alkyldimethylamine oxide which may have a substituent alkylcarboxybetaine which may have a substituent
  • alkylsulfobetaine which may have a substituent
  • the compound represented by the formula (2) in paragraph [0256] of JP-A-2008-203359, the formula (I) and the formula (II) in paragraph [0028] of JP-A-2008-276166 are disclosed.
  • a compound represented by the formula (VI), and compounds represented by paragraph numbers [0022] to [0029] of JP-A-2009-47927 can be used.
  • the stripping solution can contain additives such as an antifoaming agent and a hard water softening agent.
  • the thin device wafer can be obtained by removing the adhesive layer 11 from the thin device wafer 60a.
  • the method for removing the adhesive layer 11 includes, for example, a method of peeling and removing (mechanical peeling) the adhesive layer in the form of a film, a method of peeling and removing the adhesive layer after swelling with a peeling liquid, and spraying the peeling liquid onto the adhesive layer. Examples thereof include a method for destructive removal, a method for dissolving and removing the adhesive layer by dissolving it in a peeling solution, and a method for removing the adhesive layer by decomposition and vaporization by irradiation with actinic rays and radiation or heating.
  • a method of peeling and removing the adhesive layer in the form of a film and a method of dissolving and removing the adhesive layer in an aqueous solution or an organic solvent can be preferably used.
  • an organic solvent the organic solvent demonstrated with the stripping solution mentioned above can be used. From the viewpoint of reducing the amount of solvent used, it is preferable to remove the film as it is. Further, from the viewpoint of reducing damage on the surface of the device wafer, dissolution and removal are preferable.
  • the peel strength B between the device wafer surface 61a and the adhesive layer 11 preferably satisfies the following formula (2).
  • the support when the adhesive layer is attached to the support, the support can be regenerated by removing the adhesive layer.
  • a method of removing the adhesive layer peeling in the form of a film, a method of physically removing by brush, ultrasonic waves, ice particles, aerosol spraying, a method of dissolving and removing by dissolving in an aqueous solution or an organic solvent, A chemical removal method such as a method of decomposing or vaporizing by irradiation with actinic rays, radiation, or heat can be mentioned, and conventionally known cleaning methods can be used depending on the support.
  • a silicon substrate is used as the support, a conventionally known silicon wafer cleaning method can be used.
  • examples of the aqueous solution or organic solvent that can be used for chemical removal include strong acids, strong bases, strong oxidants, and mixtures thereof.
  • examples thereof include a mixture, a mixture of hydrofluoric acid and hydrogen peroxide, a mixture of hydrofluoric acid and ammonium fluoride.
  • the support cleaning liquid preferably contains an acid (strong acid) having a pKa of less than 0 and hydrogen peroxide.
  • the acid having a pKa of less than 0 is selected from inorganic acids such as hydrogen iodide, perchloric acid, hydrogen bromide, hydrogen chloride, nitric acid and sulfuric acid, or organic acids such as alkylsulfonic acid and arylsulfonic acid.
  • an inorganic acid is preferable, and sulfuric acid is particularly preferable.
  • 30% by mass hydrogen peroxide water can be preferably used, and the mixing ratio of the strong acid and 30% by mass hydrogen peroxide water is preferably 1:10 to 100: 1 in terms of mass ratio. ⁇ 10: 1 is more preferred, and 3: 1 to 5: 1 is particularly preferred.
  • FIG. 4A to 4E are schematic cross-sectional views (FIGS. 4A and 4B) for explaining the temporary bonding between the support and the device wafer, and the device wafer temporarily bonded to the support.
  • FIG. 4C The thinned state
  • FIG. 4D The thinned state
  • FIG. 4E The thinned state after the adhesive layer is removed from the device wafer
  • this embodiment is different from the first embodiment in that an adhesive layer is formed on the surface 61a of the device wafer.
  • the adhesive layer 11a is formed by applying (preferably applying) a temporary fixing adhesive to the surface 61a of the device wafer 60 and then drying (baking). be able to. Drying can be performed, for example, at 60 to 150 ° C. for 10 seconds to 2 minutes.
  • FIG. 4B the support 12 and the device wafer 60 are pressure-bonded, and the support 12 and the device wafer 60 are temporarily bonded.
  • FIG. 4B the support 12 and the device wafer 60 are pressure-bonded, and the support 12 and the device wafer 60 are temporarily bonded.
  • the back surface 61b of the silicon substrate 61 is subjected to mechanical or chemical treatment to reduce the thickness of the silicon substrate 61, thereby obtaining a thin device wafer 60a.
  • the support 12 is detached from the thin device wafer 60a.
  • the adhesive layer 11 is removed from the thin device wafer 60a.
  • FIG. 5A to 5E are schematic cross-sectional views (FIGS. 5A and 5B) for explaining the temporary bonding between the support and the device wafer, respectively, and the device wafer temporarily bonded to the support.
  • FIG. 5C The thinned state
  • FIG. 5D The thinned state
  • FIG. 5E the state after the adhesive layer is removed from the device wafer
  • adhesive layers 11b and 11c are formed on the support 12 and the surface 61a of the device wafer, respectively.
  • attaches the support body 12 and the device wafer 60) is different from said 1st embodiment.
  • At least one of the adhesive layer 11b and the adhesive layer 11c can be formed using the temporary fixing adhesive of the present invention. Both the adhesive layer 11b and the adhesive layer 11c can also be formed using the temporary fixing adhesive of the present invention. Only one adhesive layer uses the temporary fixing adhesive of the present invention, and the other adhesive layer is the above-described adhesive layer. It can also be formed using the temporary fixing adhesive B.
  • each of the adhesive layers 11b and 11c may be composed of only one layer, or may be a laminate formed by laminating two or more adhesive layers. That is, each adhesive layer can be formed by repeatedly applying two or more types of temporary adhesives.
  • the back surface 61b of the silicon substrate 61 is then subjected to mechanical or chemical treatment as shown in FIG.
  • the thin device wafer 60a is obtained.
  • the support 12 is detached from the thin device wafer 60a.
  • the adhesive layer 11d is removed from the thin device wafer 60a.
  • FIG. 6 is a schematic cross-sectional view for explaining the release of the temporarily bonded state between the conventional adhesive support and the device wafer.
  • an adhesive support in which an adhesive layer 11a formed of a conventional temporary fixing adhesive is provided on a support 12 is provided.
  • 100a otherwise, the adhesive support 100a and the device wafer are temporarily bonded in the same manner as described with reference to FIG. 3, and the silicon substrate is thinned on the device wafer. Similar to the above-described procedure, the thin device wafer 60a is peeled off from the adhesive support 100a.
  • the conventional temporary fixing adhesive it is difficult to easily release the temporary support to the device wafer without temporarily supporting the device wafer with a high adhesive force and damaging the device wafer.
  • a highly adhesive adhesive is used among conventional temporary adhesives, the temporary bonding between the device wafer and the support tends to be too strong. It becomes. Therefore, in order to release the temporary bonding that is too strong, for example, as shown in FIG. 6, a tape (for example, dicing tape) 70 is attached to the back surface of the thin device wafer 60a, and the thin device wafer 60a is bonded from the adhesive support 100a.
  • the structure chip 63 is detached from the device chip 62 provided with the structure 63 and the device chip 62 is likely to be damaged.
  • the temporary support for the device wafer can be easily released, but the temporary attachment between the device wafer and the support is too weak in the first place. A problem that the wafer cannot be reliably supported by the support tends to occur.
  • the laminate of the present invention exhibits sufficient adhesiveness and can easily release the temporary adhesion between the device wafer 60 and the support. That is, according to the laminated body of the present invention, the device wafer 60 can be temporarily bonded with high adhesive force, and the temporary bonding to the thin device wafer 60a can be easily released without damaging the thin device wafer 60a.
  • the adhesive layer has a single layer structure, but the adhesive layer may have a multilayer structure.
  • a silicon substrate is used as the device wafer.
  • the present invention is not limited to this, and any device that can be subjected to mechanical or chemical processing in the method of manufacturing a semiconductor device is not limited thereto. It may be a processing member.
  • a compound semiconductor substrate can also be mentioned, and specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.
  • the device wafer (silicon substrate) is mechanically or chemically treated as a device wafer thinning process and a through silicon via formation process, but is not limited thereto. Any processing required in the method of manufacturing a semiconductor device is included.
  • the shape, size, number, arrangement location, and the like of the device chip in the device wafer exemplified in the above-described embodiment are arbitrary and are not limited.
  • the kit of the present invention includes the first temporary fixing adhesive of the present invention described above and an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, and It has the 2nd adhesive agent from which a composition differs from the said 1st temporary fix
  • the second adhesive preferably contains an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units. Further, in the second adhesive, the content of the compound that is liquid at 25 ° C.
  • the first temporary adhesive and that contains silicon atoms is contained in the first temporary adhesive, and is liquid at 25 ° C. It is preferable that it is 10 mass% or less of content of the compound containing an atom.
  • the 2nd adhesive agent in this invention contains the elastomer Y which contains the repeating unit derived from styrene in the ratio of 10 mass% or more and less than 50 mass% in all the repeating units. With such a configuration, the warpage of the wafer can be more effectively suppressed.
  • the elastomer X and the elastomer Y, and the blending ratio thereof are synonymous with those described for the temporary adhesive of the present invention, and the preferred ranges are also the same.
  • the kit of this invention has a base material and a support body further.
  • a base material and a support body the base material and support body which were demonstrated by the laminated body mentioned above are mentioned, These can be used.
  • a laminate having the first adhesive layer made of the temporary fixing adhesive of the present invention and the above-described second adhesive layer is provided between the base material and the support. Can be manufactured.
  • Mw 50,000 to less than 100,000
  • Rb-2 ZEONEX 480R (Nippon Zeon cycloolefin polymer)
  • Rb-3) Durimide (registered trademark) 284 (polyimide made by FUJIFILM)
  • the amount of unsaturated double bonds is a value calculated by NMR measurement.
  • the 5% thermal mass decrease temperature is a temperature at which 5% of the mass at the start of measurement is reduced under the condition that the temperature is increased from 25 ° C. at 20 ° C./min in a nitrogen stream by a thermogravimetric measuring device (TGA). Is a measured value.
  • the adhesive layer forming coating solution 1 is applied onto a Si wafer (support wafer) having a diameter of 100 mm and a thickness of 525 ⁇ m by spin coating, followed by baking at 110 ° C. for 1 minute and further by baking at 190 ° C. for 4 minutes.
  • An adhesive support 1 having a layer was prepared.
  • test piece A surface of the adhesive support 1 on which the adhesive layer is formed and a device surface of a Si wafer (device wafer) with a bump made of Cu having a diameter of 100 mm, a thickness of 525 ⁇ m, and a height of 10 ⁇ m are subjected to 190 ° C. under vacuum.
  • the test piece was manufactured by pressure bonding for 3 minutes at a pressure of 0.11 MPa.
  • Adhesiveness> Using a tensile tester (Imada Digital Force Gauge, Model: ZP-50N), the tensile strength of the test piece was measured in a direction along the surface of the adhesive layer under the condition of 250 mm / min. Evaluation was made according to the following criteria.
  • test piece was set together with a dicing frame in the center of the dicing tape mounter, and the dicing tape was arranged from above. Under vacuum, the test piece and the dicing tape were fixed with a roller, the dicing tape was cut on a dicing frame, and the test piece was mounted on the dicing tape. Under 25 ° C., the test piece was pulled in the direction perpendicular to the surface of the adhesive layer (90 ° direction) under the condition of 50 mm / min, and the peelability was evaluated according to the following criteria. In addition, after heating the prepared test piece at 250 ° C. for 30 minutes, the test piece was pulled at 25 ° C.
  • the maximum peeling force was less than 12N, and peeling was possible.
  • B It was able to peel off with the largest peeling force being 12N or more and less than 16N.
  • C Separation was possible when the maximum peeling force was 16N or more and less than 20N.
  • D Separation was possible when the maximum peeling force was 20N or more and less than 25N.
  • E The maximum peeling force was 25 N / cm or more or the Si wafer was damaged.
  • the adhesive layer-attached Si wafer (device wafer) is set on a spin coater with the adhesive layer facing up, and the same solvent as the solvent for the adhesive layer forming coating solution shown in Table 1 below is used as a cleaning solvent. And sprayed for 5 minutes. Furthermore, only Comparative Examples 5, 6, and 7 in which mesitylene was not used for spraying for 5 minutes were rinsed by spraying isopropyl alcohol (IPA) while rotating the Si wafer. Further, spin drying was performed. Thereafter, the appearance was observed and the presence or absence of the remaining adhesive layer was checked visually and by X-ray photoelectron spectroscopy with the amount of carbon atoms on the surface of the Si wafer, and evaluated according to the following criteria.
  • IPA isopropyl alcohol
  • the measurement apparatus uses PHI Quantera SXM (manufactured by ULVAC-PHI), irradiates the substrate surface of the wafer 1400 ⁇ m ⁇ 700 ⁇ m with 25 W of monochromatic AlK ⁇ ray, and detects it at an extraction angle of 45 °. The abundance ratio (atm%) of carbon atoms was measured.
  • the measurement temperature was 25 ° C. and the measurement pressure was 10 ⁇ 8 Pa or less.
  • the area of the substrate surface of the wafer refers to the area of the surface of the substrate when it is assumed that there is no uneven portion even when the surface of the substrate surface is uneven. Evaluation was made according to the following evaluation categories.
  • A As a result of ESCA measurement, the abundance ratio of carbon atoms was less than 1%.
  • B As a result of ESCA measurement, the abundance ratio of carbon atoms was 1% or more and less than 3%.
  • C As a result of ESCA measurement, the abundance ratio of carbon atoms was 3% or more.
  • A With a peel strength of 4 N / cm or less, the adhesive layer can be removed in the form of a film without breaking, and no peeling residue of the adhesive layer is observed.
  • B With a peel strength exceeding 4 N / cm, the adhesive layer can be removed in a film form without breaking, and no peel residue of the adhesive layer is observed.
  • C Not applicable to any of the above A and B (breakage during peeling)
  • ⁇ Wafer warpage> After polishing the surface of the device wafer that is not in contact with the adhesive layer of the prepared test piece until the thickness of the device wafer reaches 35 ⁇ m, the surface is raised using FLX-2320 manufactured by KLA-Tencor. The temperature rate and the cooling rate were set to 10 ° C./min, heated from room temperature to 200 ° C., then cooled to 25 ° C., and the Bow value (warping magnitude) was measured.
  • C Bow value is 80 ⁇ m or more and less than 200 ⁇ m
  • D Bow value is 200 ⁇ m or more
  • the temporary adhesive of the present invention when used, the adhesiveness and the room temperature peelability were good. Furthermore, the peelability after heating and the removability of the adhesive layer were good, and the warpage of the wafer was suppressed. Further, in the example in which the above-described elastomer X and elastomer Y were used in combination as the elastomer, the warpage of the wafer was more effectively suppressed.
  • the adhesive layer forming coating solution 2 is spin-coated on a Si wafer (support wafer) having a diameter of 100 mm and a thickness of 525 ⁇ m, and then baked at 110 ° C. for 1 minute, and further baked at 190 ° C. for 4 minutes.
  • the adhesive support body 2 which has a layer was produced.
  • the coating solution 3 for forming the adhesive layer was spin coated on a Si wafer (device wafer) with a bump made of Cu having a diameter of 100 mm, a thickness of 525 ⁇ m, and a height of 10 ⁇ m, and then baked at 110 ° C. for 1 minute.
  • the adhesive base material which has an adhesive layer was produced by baking at 190 degreeC for 4 minutes.
  • composition of coating liquids 2 and 3 for forming an adhesive layer> -A component The A component described in Table 2 is the mass part shown in Table 2.-B component: The B component described in Table 2 is the mass part shown in Table 2.-Irganox 1010 (manufactured by BASF Corp.): 0 .9 parts by mass. Sumilizer TP-D (manufactured by Sumitomo Chemical Co., Ltd.): 0.9 parts by mass. Mesitylene: 30 parts by mass.
  • test piece The surface of the adhesive support 2 on which the adhesive layer is formed and the surface of the adhesive base material on which the adhesive layer is formed are pressure-bonded under a vacuum at 190 ° C. and a pressure of 0.11 MPa for 3 minutes, A test piece was prepared.
  • ⁇ Embeddability> Adhesive layer after bonding the test piece using C-SAM (ultrasonic microscope) (including the interface between the adhesive layers, the bonding surface between the bonding layer and the substrate, and the bonding surface between the bonding layer and the support) The presence or absence of voids was confirmed.
  • C More than 5 small voids having a diameter of 10 ⁇ m or less can be confirmed, but there is no actual harm.
  • the temporary adhesive of the present invention when used, the adhesiveness and the room temperature peelability were good. Furthermore, the peelability after heating and the removability of the adhesive layer were good. Further, in the example in which the above-described elastomer X and elastomer Y were used in combination as the elastomer, the warpage of the wafer was more effectively suppressed. In addition, when applied to both the support side and the device side (Examples 34 to 41), the embedding property was good.
  • composition of the composition for forming an adhesive film A component of Table 3 is the mass part shown in Table 3.
  • B component of Table 3 is the mass part shown in Table 3.
  • -Solvent The solvent of Table 3 is the table. 3 parts by mass
  • a surface of the adhesive support 2 on which the adhesive layer was formed and a Si wafer having a diameter of 100 mm were pressure-bonded under a vacuum at 190 ° C. and a pressure of 0.11 MPa for 3 minutes to prepare a test piece.
  • Remaining adhesive layer is not observed
  • the temporary adhesive of the present invention when used, the adhesiveness and the room temperature peelability were good. Furthermore, the peelability after heating and the removability of the adhesive layer were good, and the warpage of the wafer was suppressed. Further, in the example in which the above-described elastomer X and elastomer Y were used in combination as the elastomer, the warpage of the wafer was more effectively suppressed.
  • base material 2 supports 3, 3A, 3B, 11, 11a to 11d: adhesive layer 12: support 60: device wafer 60a: thin device wafer 61: silicon substrate 61a: front surface 61b :, 61b1: back surface 62: Device chip 63: structure 100, 100a: adhesive support

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Abstract

Provided are: an adhesive for temporary fixing, which has excellent releasability at room temperature, while having excellent bondability; and an adhesive film, an adhesive supporting body, a laminate and a kit, each of which uses this adhesive for temporary fixing. An adhesive for temporary fixing, which contains: a compound that is in a liquid state at 25°C and contains a silicon atom; and an elastomer X that contains a repeating unit derived from styrene at a ratio of from 50% by mass to 95% by mass (inclusive) relative to all the repeating units.

Description

仮止め接着剤、接着フィルム、接着性支持体、積層体およびキットTemporary adhesive, adhesive film, adhesive support, laminate and kit
 本発明は、仮止め接着剤、接着フィルム、接着性支持体、積層体およびキットに関する。より詳細には、半導体装置などの製造に好ましく用いることができる、仮止め接着剤、接着フィルム、接着性支持体、積層体およびキットに関する。 The present invention relates to a temporary fixing adhesive, an adhesive film, an adhesive support, a laminate, and a kit. More specifically, the present invention relates to a temporary fixing adhesive, an adhesive film, an adhesive support, a laminate, and a kit that can be preferably used for manufacturing a semiconductor device or the like.
 IC(集積回路)やLSI(大規模集積回路)などの半導体デバイスの製造プロセスにおいては、デバイスウエハ上に多数のICチップが形成され、ダイシングにより個片化される。
 電子機器の更なる小型化および高性能化のニーズに伴い、電子機器に搭載されるICチップについても更なる小型化および高集積化が求められているが、デバイスウエハの面方向における集積回路の高集積化は限界に近づいている。
In a manufacturing process of a semiconductor device such as an IC (Integrated Circuit) or an LSI (Large Scale Integrated Circuit), a large number of IC chips are formed on a device wafer and separated into pieces by dicing.
With the need for further miniaturization and higher performance of electronic equipment, further miniaturization and higher integration are required for IC chips mounted on electronic equipment. High integration is approaching its limit.
 ICチップ内の集積回路から、ICチップの外部端子への電気的な接続方法としては、従来より、ワイヤーボンディング法が広く知られているが、ICチップの小型化を図るべく、近年、デバイスウエハに貫通孔を設け、外部端子としての金属プラグを貫通孔内を貫通するように集積回路に接続する方法(いわゆる、シリコン貫通電極(TSV)を形成する方法)が知られている。しかしながら、シリコン貫通電極を形成する方法のみでは、上記した近年のICチップに対する更なる高集積化のニーズに充分応えられるものではない。 As an electrical connection method from an integrated circuit in an IC chip to an external terminal of the IC chip, a wire bonding method has been widely known. However, in recent years, in order to reduce the size of an IC chip, a device wafer is used. A method is known in which a through-hole is provided in the semiconductor device and a metal plug as an external terminal is connected to an integrated circuit so as to pass through the through-hole (so-called silicon through electrode (TSV) forming method). However, only the method of forming the through silicon vias cannot sufficiently meet the above-described needs for higher integration of the recent IC chip.
 以上を鑑み、ICチップ内の集積回路を多層化することにより、デバイスウエハの単位面積当たりの集積度を向上させる技術が知られている。しかしながら、集積回路の多層化は、ICチップの厚みを増大させるため、ICチップを構成する部材の薄型化が必要である。このような部材の薄型化としては、例えば、デバイスウエハの薄型化が検討されており、ICチップの小型化につながるのみならず、シリコン貫通電極の製造におけるデバイスウエハの貫通孔製造工程を省力化できることから、有望視されている。また、パワーデバイス・イメージセンサーなどの半導体デバイスにおいても、上記集積度の向上やデバイス構造の自由度向上の観点から、薄型化が試みられている。 In view of the above, a technique for improving the degree of integration per unit area of a device wafer by multilayering an integrated circuit in an IC chip is known. However, since the multilayered integrated circuit increases the thickness of the IC chip, it is necessary to reduce the thickness of the members constituting the IC chip. For example, the thinning of the device wafer is being considered as a thinning of such a member, which not only leads to the miniaturization of the IC chip, but also saves the process of manufacturing the through hole of the device wafer in the production of the silicon through electrode. Because it is possible, it is considered promising. In addition, thinning of semiconductor devices such as power devices and image sensors has been attempted from the viewpoint of improving the degree of integration and improving the degree of freedom of the device structure.
 デバイスウエハとしては、約700~900μmの厚さを有するものが広く知られているが、近年、ICチップの小型化等を目的に、デバイスウエハの厚さを200μm以下となるまで薄くすることが試みられている。
 しかしながら、厚さ200μm以下のデバイスウエハは非常に薄く、これを基材とする半導体デバイス製造用部材も非常に薄いため、このような部材に対して更なる処理を施したり、あるいは、このような部材を単に移動したりする場合等において、部材を安定的に、かつ、損傷を与えることなく支持することは困難である。
A device wafer having a thickness of about 700 to 900 μm is widely known, but in recent years, for the purpose of reducing the size of an IC chip or the like, the thickness of the device wafer can be reduced to 200 μm or less. Has been tried.
However, since a device wafer having a thickness of 200 μm or less is very thin and a semiconductor device manufacturing member based on the device wafer is very thin, such a member may be further processed, or When the member is simply moved, it is difficult to support the member stably and without damage.
 上記のような問題を解決すべく、表面にデバイスが設けられた薄型化前のデバイスウエハと支持体とを仮止め接着剤により仮接着し、デバイスウエハの裏面を研削して薄型化した後に、支持体を剥がす技術が知られている。
 例えば、特許文献1には、ポリスチレン系エラストマーと表面改質剤を有する接着剤組成物が開示されている。
 また、特許文献2には、シクロオレフィン系重合体と、ジアルキルシリコーン構造およびポリオキシアルキレン構造等の構造を有する化合物とを含有する仮固定材が開示されている。
 さらに、特許文献3には、デバイスウエハと支持基板の仮接着に際し、剥離層と保護層を用い、剥離層にフッ素原子および/またはケイ素原子を含む材料を用いることが記載されている。
In order to solve the above-mentioned problems, the device wafer and the support body before thinning provided with devices on the surface are temporarily bonded with a temporary fixing adhesive, and the back surface of the device wafer is ground and thinned, A technique for peeling the support is known.
For example, Patent Document 1 discloses an adhesive composition having a polystyrene-based elastomer and a surface modifier.
Patent Document 2 discloses a temporary fixing material containing a cycloolefin polymer and a compound having a structure such as a dialkyl silicone structure and a polyoxyalkylene structure.
Furthermore, Patent Document 3 describes that a release layer and a protective layer are used for temporary adhesion between a device wafer and a support substrate, and a material containing fluorine atoms and / or silicon atoms is used for the release layer.
米国2014/0178701A1号公報US 2014/0178701 A1 特開2013-241568号公報JP 2013-241568 A 特開2015-065401号公報Japanese Patent Laying-Open No. 2015-065401
 しかしながら、本発明者が検討したところ、特許文献1に記載の接着剤組成物および特許文献2に記載の仮固定材では、デバイスウェハを薄型化した後、室温でデバイスウエハと支持体を剥離することが難しいことが分かった。また、通常、剥離性を向上させようとすると、接着性が劣る傾向にある。
 本発明は、かかる課題を解決することを目的としたものであって、常温での剥離性に優れ、かつ、接着性に優れた仮止め接着剤、ならびに、上記仮止め接着剤を用いた、接着フィルム、接着性支持体、積層体およびキットを提供することを目的とする。
However, as a result of investigation by the present inventor, the adhesive composition described in Patent Document 1 and the temporary fixing material described in Patent Document 2 peel the device wafer from the support at room temperature after thinning the device wafer. I found it difficult. Further, usually, when trying to improve the peelability, the adhesiveness tends to be inferior.
The present invention is intended to solve such a problem, is excellent in peelability at room temperature, and has a temporary adhesive that is excellent in adhesiveness, and the above temporary adhesive. An object is to provide an adhesive film, an adhesive support, a laminate, and a kit.
 上記課題のもと、本発明者が鋭意検討した結果、スチレン由来の繰り返し単位の割合の多いスチレン系エラストマーに、25℃で液体状であって、シリコン原子を含有する化合物を配合することにより、上記課題を解決しうることを見出し、本発明を完成するに至った。
 具体的には、下記手段<1>により、好ましくは、下記手段<2>~<25>により、上記課題は解決された。
<1>25℃で液体状であって、シリコン原子を含有する化合物と、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーX、を含有する仮止め接着剤。
<2>上記シリコン原子を含有する化合物の、25℃から、20℃/分で昇温した10%熱質量減少温度が、250℃以上である、<1>に記載の仮止め接着剤。
<3>上記エラストマーXのJIS K6253の方法に従いタイプAデュロメーターで測定した硬度が80以上である、<1>または<2>に記載の仮止め接着剤。
<4>さらに、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYを含む、<1>~<3>のいずれかに記載の仮止め接着剤。
<5>上記エラストマーXと、上記エラストマーYとの質量比が、5:95~95:5である、<4>に記載の仮止め接着剤。
<6>上記仮止め接着剤に含まれるエラストマーの少なくとも1種が、25℃から、20℃/分で昇温した5%熱質量減少温度が、250℃以上である、<1>~<5>のいずれかに記載の仮止め接着剤。
<7>上記仮止め接着剤に含まれるエラストマーの少なくとも1種の、不飽和二重結合量が、7mmol/g以下である、<1>~<6>のいずれかに記載の仮止め接着剤。
<8>上記仮止め接着剤に含まれるエラストマーの少なくとも1種が、水添物である、<1>~<7>のいずれかに記載の仮止め接着剤。
<9>上記仮止め接着剤に含まれるエラストマーの少なくとも1種が、ブロック共重合体である、<1>~<8>のいずれかに記載の仮止め接着剤。
<10>上記仮止め接着剤に含まれるエラストマーの少なくとも1種が、片末端または両末端がスチレンに由来するブロック共重合体である、<1>~<9>のいずれかに記載の仮止め接着剤。
<11>上記仮止め接着剤中のエラストマーの合計量に対する、シリコン原子を含有する化合物の含有量が0.01質量%以上2.5質量%未満である、<1>~<10>のいずれかに記載の仮止め接着剤。
<12>上記シリコン原子を含有する化合物が、ジメチルポリシロキサン、メチルフェニルポリシロキサン、ジフェニルポリシロキサンおよびポリエーテル変性ポリシロキサンから選択される、<1>~<11>のいずれかに記載の仮止め接着剤。
<13>さらに、酸化防止剤および溶剤の少なくとも一方を含む、<1>~<12>のいずれかに記載の仮止め接着剤。
<14>上記仮止め接着剤は、半導体装置製造用の仮止め接着剤である、<1>~<13>のいずれかに記載の仮止め接着剤。
<15><1>~<14>のいずれかに記載の仮止め接着剤からなる接着層を有する、接着フィルム。
<16><1>~<14>のいずれかに記載の仮止め接着剤からなる接着層と、支持体とを有する接着性支持体。
<17>支持体と、<1>~<14>のいずれかに記載の仮止め接着剤からなる接着層と、基材を有する積層体。
<18>上記接着層が上記支持体の表面に位置し、上記基材が上記接着層の上記支持体とは反対側の表面に位置する、<17>に記載の積層体。
<19>上記支持体と、上記接着層と、上記基材が、上記順に積層しており、かつ、上記支持体と上記接着層の間に、上記接着層とは組成が異なる第2の接着層を有する、<17>に記載の積層体。
<20>上記支持体と、上記接着層と、上記基材が、上記順に積層しており、かつ、上記接着層と上記基材の間に上記接着層とは組成が異なる第2の接着層を有する、<17>に記載の積層体。
<21>上記第2の接着層が、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含む、<19>または<20>に記載の積層体。
<22>上記第2の接着層が、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYを含む、<19>~<21>のいずれかに記載の積層体。
<23>上記第2の接着層における、25℃で液体状であって、シリコン原子を含有する化合物の含有量は、上記接着層に含まれる、25℃で液体状であって、シリコン原子を含有する化合物の含有量の10質量%以下である、<19>~<22>のいずれかに記載の積層体。
<24>上記基材が、デバイスウエハである<17>~<23>のいずれかに記載の積層体。
<25><1>~<14>のいずれかに記載の仮止め接着剤と、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含み、かつ、上記仮止め接着剤とは組成が異なる第2の接着剤を有するキット。
As a result of intensive studies by the present inventors under the above-mentioned problems, by blending a styrene-based elastomer having a large proportion of repeating units derived from styrene with a liquid at 25 ° C. and containing a silicon atom, It has been found that the above problems can be solved, and the present invention has been completed.
Specifically, the above problem has been solved by the following means <1>, preferably by the following means <2> to <25>.
<1> Contains a compound containing silicon atoms and an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, which is liquid at 25 ° C. Temporary adhesive.
<2> The temporary fixing adhesive according to <1>, wherein the compound containing the silicon atom has a 10% thermal mass reduction temperature of 250 ° C. or higher which is increased from 25 ° C. at 20 ° C./min.
<3> The temporary adhesive according to <1> or <2>, wherein the elastomer X has a hardness measured by a type A durometer according to the method of JIS K6253 of 80 or more.
<4> The temporary fixing adhesive according to any one of <1> to <3>, further comprising an elastomer Y containing a repeating unit derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units. Agent.
<5> The temporary fixing adhesive according to <4>, wherein the mass ratio of the elastomer X to the elastomer Y is 5:95 to 95: 5.
<6> At least one of the elastomers included in the temporary fixing adhesive has a 5% thermal mass reduction temperature of 250 ° C. or higher, increased from 25 ° C. at 20 ° C./min, <1> to <5 > The temporary fixing adhesive in any one of>.
<7> The temporary fixing adhesive according to any one of <1> to <6>, wherein the amount of unsaturated double bonds of at least one of the elastomers included in the temporary fixing adhesive is 7 mmol / g or less .
<8> The temporary fixing adhesive according to any one of <1> to <7>, wherein at least one of the elastomers included in the temporary fixing adhesive is a hydrogenated product.
<9> The temporary fixing adhesive according to any one of <1> to <8>, wherein at least one of the elastomers included in the temporary fixing adhesive is a block copolymer.
<10> The temporary fixing according to any one of <1> to <9>, wherein at least one of the elastomers included in the temporary fixing adhesive is a block copolymer derived from styrene at one or both ends. adhesive.
<11> Any one of <1> to <10>, wherein the content of the compound containing silicon atoms is 0.01% by mass or more and less than 2.5% by mass with respect to the total amount of the elastomer in the temporary fixing adhesive Temporary tack adhesive according to crab
<12> The temporary fixing according to any one of <1> to <11>, wherein the compound containing a silicon atom is selected from dimethylpolysiloxane, methylphenylpolysiloxane, diphenylpolysiloxane, and polyether-modified polysiloxane adhesive.
<13> The temporary fixing adhesive according to any one of <1> to <12>, further comprising at least one of an antioxidant and a solvent.
<14> The temporary fixing adhesive according to any one of <1> to <13>, wherein the temporary fixing adhesive is a temporary fixing adhesive for manufacturing a semiconductor device.
<15> An adhesive film having an adhesive layer made of the temporary fixing adhesive according to any one of <1> to <14>.
<16> An adhesive support comprising an adhesive layer comprising the temporary fixing adhesive according to any one of <1> to <14>, and a support.
<17> A laminate comprising a support, an adhesive layer comprising the temporary fixing adhesive according to any one of <1> to <14>, and a substrate.
<18> The laminate according to <17>, wherein the adhesive layer is located on the surface of the support, and the base material is located on the surface of the adhesive layer opposite to the support.
<19> A second adhesive in which the support, the adhesive layer, and the base material are laminated in the order described above, and the composition of the adhesive layer is different between the support and the adhesive layer. The laminate according to <17>, having a layer.
<20> A second adhesive layer in which the support, the adhesive layer, and the base material are laminated in the order described above, and the composition of the adhesive layer is different between the adhesive layer and the base material. The laminate according to <17>, comprising:
<21> The second adhesive layer according to <19> or <20>, wherein the second adhesive layer includes an elastomer X containing a repeating unit derived from styrene in a ratio of 50% by mass to 95% by mass in all repeating units. Laminated body.
<22> Any one of <19> to <21>, wherein the second adhesive layer includes an elastomer Y containing a repeating unit derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units. The laminated body as described in.
<23> The content of the compound that is liquid at 25 ° C. and contains silicon atoms in the second adhesive layer is liquid at 25 ° C. contained in the adhesive layer, and includes silicon atoms. The laminate according to any one of <19> to <22>, which is 10 mass% or less of the content of the compound to be contained.
<24> The laminate according to any one of <17> to <23>, wherein the substrate is a device wafer.
<25> A temporary fixing adhesive according to any one of <1> to <14>, and an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units. And a kit having a second adhesive having a composition different from that of the temporary adhesive.
 本発明により、常温での剥離性に優れ、かつ、接着性に優れた仮止め接着剤、ならびに、上記仮止め接着剤を用いた、接着フィルム、接着性支持体、積層体およびキットを提供可能になった。 According to the present invention, it is possible to provide an adhesive film, an adhesive support, a laminate, and a kit using the temporary fixing adhesive having excellent peelability at room temperature and excellent adhesiveness, and the temporary adhesive. Became.
本発明の積層体の一実施形態を示す概略図である。It is the schematic which shows one Embodiment of the laminated body of this invention. 本発明の積層体の他の実施形態を示す概略図である。It is the schematic which shows other embodiment of the laminated body of this invention. 半導体装置の製造方法を示す第一の実施形態の概略図である。It is the schematic of 1st embodiment which shows the manufacturing method of a semiconductor device. 半導体装置の製造方法を示す第二の実施形態の概略図である。It is the schematic of 2nd embodiment which shows the manufacturing method of a semiconductor device. 半導体装置の製造方法を示す第三の実施形態の概略図である。It is the schematic of 3rd embodiment which shows the manufacturing method of a semiconductor device. 従来の接着性支持体とデバイスウエハとの仮接着状態の解除を説明する概略断面図である。It is a schematic sectional drawing explaining cancellation | release of the temporary adhesion state of the conventional adhesive support body and a device wafer.
 以下において、本発明の内容について詳細に説明する。尚、本明細書において「~」とはその前後に記載される数値を下限値及び上限値として含む意味で使用される。
 本明細書における基(原子団)の表記において、置換および無置換を記していない表記は、置換基を有さないものと共に置換基を有するものをも包含するものである。例えば、「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含するものである。
 本明細書中における「活性光線」または「放射線」は、例えば、可視光線、紫外線、遠紫外線、電子線、X線等を含むものを意味する。
 本明細書において、「光」とは、活性光線または放射線を意味している。
 本明細書において、「露光」とは、特に断らない限り、水銀灯、紫外線、エキシマレーザーに代表される遠紫外線、X線、EUV光(Extreme Ultra-Violet)等を用いた露光のみならず、電子線およびイオンビーム等の粒子線を用いた描画も含む。
 本明細書において、「(メタ)アクリレート」は、アクリレートおよびメタアクリレートを表し、「(メタ)アクリル」は、アクリルおよびメタクリルを表し、「(メタ)アクリロイル」は、アクリロイルおよびメタクリロイルを表す。
 本明細書において、重量平均分子量および数平均分子量は、ゲルパーミエーションクロマトグラフィー(GPC)測定でのポリスチレン換算値として定義される。本明細書において、重量平均分子量(Mw)および数平均分子量(Mn)は、例えば、HLC-8220(東ソー(株)製)を用い、カラムとしてTSKgel Super AWM―H(東ソー(株)製、6.0mm(内径)×15.0cm)を、溶離液として10mmol/L リチウムブロミドNMP(N-メチルピロリジノン)溶液を用いることによって求めることができる。
 本明細書において、「親油基」とは、親水性基を含まない官能基を意味する。また、「親水性基」とは、水との間に親和性を示す官能基を意味する。
 なお、以下に説明する実施の形態において、既に参照した図面において説明した部材等については、図中に同一符号あるいは相当符号を付すことにより説明を簡略化あるいは省略化する。
Hereinafter, the contents of the present invention will be described in detail. In the present specification, “to” is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
In the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
“Actinic light” or “radiation” in the present specification means, for example, those including visible light, ultraviolet rays, far ultraviolet rays, electron beams, X-rays and the like.
In this specification, “light” means actinic rays or radiation.
In this specification, “exposure” means not only exposure using a mercury lamp, ultraviolet rays, far ultraviolet rays typified by excimer laser, X-ray, EUV light (Extreme Ultra-Violet), etc. Also includes drawing using a particle beam such as a beam and an ion beam.
In the present specification, “(meth) acrylate” represents acrylate and methacrylate, “(meth) acryl” represents acryl and methacryl, and “(meth) acryloyl” represents acryloyl and methacryloyl.
In this specification, a weight average molecular weight and a number average molecular weight are defined as a polystyrene conversion value in gel permeation chromatography (GPC) measurement. In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are, for example, HLC-8220 (manufactured by Tosoh Corporation), and TSKgel Super AWM-H (manufactured by Tosoh Corporation, 6) as a column. 0.0 mm (inner diameter) × 15.0 cm) can be obtained by using a 10 mmol / L lithium bromide NMP (N-methylpyrrolidinone) solution as an eluent.
In the present specification, the “lipophilic group” means a functional group that does not contain a hydrophilic group. Further, the “hydrophilic group” means a functional group showing affinity with water.
In the embodiments described below, the members and the like described in the drawings already referred to are denoted by the same or corresponding reference numerals in the drawings, and the description is simplified or omitted.
<仮止め接着剤>
 本発明の仮止め接着剤は、25℃で液体状であって、シリコン原子を含有する化合物(以下、「ケイ素系液体状化合物」ということがある)と、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXと、を含有することを特徴とする。
 本発明の仮止め接着剤によれば、デバイスウエハ等の基材に対して機械的または化学的な処理などを施す際に、基材を安定して仮接着できるとともに、基材に対する仮接着を容易に解除できる接着層を形成できる。
 本発明の仮止め接着剤は、上述したケイ素系液体状化合物を含むので、接着層の表層にケイ素系液体状化合物が偏在し易く、接着層表層におけるケイ素系液体状化合物の濃度を高めることができる。従って、ケイ素系液体状化合物の量が仮止め接着剤の固形分に対し比較的少なくても、基材や支持体に対する剥離性に優れた接着層を形成できる。
 また、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含むので、仮止め接着剤からなる接着層の一部または全部にエラストマーX由来の硬い領域が形成され、剥離性を向上させる。
 本発明の仮止め接着剤は、半導体装置製造用の仮止め接着剤として特に好ましく用いることができる。
 以下、本発明の仮止め接着剤について具体的に説明する。
<Temporary adhesive>
The temporary fixing adhesive of the present invention is a liquid at 25 ° C. and contains a silicon atom-containing compound (hereinafter sometimes referred to as “silicon-based liquid compound”) and a repeating unit derived from styrene as all repeating units. And elastomer X contained in a proportion of 50% by mass or more and 95% by mass or less.
According to the temporary fixing adhesive of the present invention, when performing mechanical or chemical treatment on a substrate such as a device wafer, the substrate can be stably temporarily bonded, and temporary bonding to the substrate can be performed. An adhesive layer that can be easily released can be formed.
Since the temporary fixing adhesive of the present invention contains the above-described silicon-based liquid compound, the silicon-based liquid compound is likely to be unevenly distributed on the surface layer of the adhesive layer, and the concentration of the silicon-based liquid compound in the surface layer of the adhesive layer can be increased. it can. Therefore, even if the amount of the silicon-based liquid compound is relatively small with respect to the solid content of the temporary fixing adhesive, an adhesive layer having excellent peelability with respect to the substrate and the support can be formed.
Moreover, since the elastomer X which contains the repeating unit derived from styrene in the ratio of 50 mass% or more and 95 mass% or less in all the repeating units is included, it is derived from the elastomer X in a part or all of the adhesive layer made of the temporary fixing adhesive. A hard region is formed and the peelability is improved.
The temporary fixing adhesive of the present invention can be particularly preferably used as a temporary fixing adhesive for manufacturing a semiconductor device.
Hereinafter, the temporary fixing adhesive of the present invention will be specifically described.
<<ケイ素系液体状化合物>>
 本発明の仮止め接着剤は、ケイ素系液体状化合物を含有する。
 本発明において、液体状とは、25℃で流動性を有する化合物であって、例えば、25℃での粘度が、1~100,000mPa・sである化合物を意味する。ケイ素系液体状化合物の25℃での粘度は、10~20,000mPa・sがより好ましく、100~15,000mPa・sが一層好ましい。ケイ素系液体状化合物の粘度が上記範囲であれば、接着層の表層にケイ素系液体状化合物がより偏在しやすくなり好ましい。
<< Silicon-based liquid compound >>
The temporary fixing adhesive of the present invention contains a silicon-based liquid compound.
In the present invention, the liquid state means a compound having fluidity at 25 ° C. and having a viscosity of 1 to 100,000 mPa · s at 25 ° C., for example. The viscosity of the silicon-based liquid compound at 25 ° C. is more preferably 10 to 20,000 mPa · s, and still more preferably 100 to 15,000 mPa · s. When the viscosity of the silicon-based liquid compound is within the above range, the silicon-based liquid compound is more likely to be unevenly distributed in the surface layer of the adhesive layer, which is preferable.
 本発明において、ケイ素系液体状化合物は、オリゴマー、ポリマーのいずれの形態の化合物であっても好ましく用いることができる。また、オリゴマーとポリマーとの混合物であってもよい。かかる混合物には、モノマーを更に含んでいてもよい。また、ケイ素系液体状化合物は、モノマーであってもよい。
 ケイ素系液体状化合物は、耐熱性等の観点から、オリゴマー、ポリマーおよびこれらの混合物が好ましい。
 オリゴマー、ポリマーとしては、例えば、付加重合物、重縮合物、付加縮合物など、特に限定なく使用できるが、重縮合物が特に好ましい。
 ケイ素系液体状化合物の重量平均分子量は、500~100000が好ましく、1000~50000がより好ましく、2000~20000が更に好ましい。
In the present invention, the silicon-based liquid compound can be preferably used in any form of oligomer or polymer. Moreover, the mixture of an oligomer and a polymer may be sufficient. Such a mixture may further contain a monomer. The silicon-based liquid compound may be a monomer.
The silicon-based liquid compound is preferably an oligomer, a polymer, or a mixture thereof from the viewpoint of heat resistance and the like.
As the oligomer and polymer, for example, an addition polymer, a polycondensate, an addition condensate and the like can be used without particular limitation, but a polycondensate is particularly preferable.
The weight average molecular weight of the silicon-based liquid compound is preferably 500 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 20,000.
 本発明において、ケイ素系液体状化合物は、仮接着に供する基材の処理時に変性しない化合物が好ましい。例えば、250℃以上での加熱や、種々の薬液で基材を処理した後でも液体状として存在しうる化合物が好ましい。具体的な一例としては、25℃の状態から10℃/分の昇温条件で250℃まで加熱した後、25℃に冷却した後の25℃での粘度が1~100,000mPa・sであることが好ましく、10~20,000mPa・sがより好ましく、100~15,000mPa・sが一層好ましい。
 このような特性を有するケイ素系液体状化合物としては、反応性基を有さない、非熱硬化性化合物であることが好ましい。ここでいう反応性基とは、250℃の加熱で反応する基全般を指し、重合性基、加水分解性基などが挙げられる。具体的には、例えば、(メタ)アクリル基、エポキシ基、イソシアナト基などが挙げられる。
 また、ケイ素系液体状化合物は、25℃から、20℃/分で昇温した10%熱質量減少温度が、250℃以上であることが好ましく、280℃以上がより好ましい。また、上限値は、特に限定はないが、例えば、1000℃以下が好ましく、800℃以下がより好ましい。この態様によれば、耐熱性に優れた接着層を形成しやすい。なお、質量減少温度とは、熱重量測定装置(TGA)により、窒素気流下において、上記昇温条件で測定した値である。
In the present invention, the silicon-based liquid compound is preferably a compound that does not denature during the treatment of the base material used for temporary adhesion. For example, a compound that can exist in a liquid state even after heating at 250 ° C. or higher or treating the substrate with various chemical solutions is preferable. As a specific example, the viscosity at 25 ° C. is 1 to 100,000 mPa · s after heating to 250 ° C. under a temperature rising condition of 10 ° C./min from a state of 25 ° C. It is preferably 10 to 20,000 mPa · s, more preferably 100 to 15,000 mPa · s.
The silicon-based liquid compound having such characteristics is preferably a non-thermosetting compound having no reactive group. The reactive group here refers to all groups that react by heating at 250 ° C., and examples thereof include a polymerizable group and a hydrolyzable group. Specifically, a (meth) acryl group, an epoxy group, an isocyanato group, etc. are mentioned, for example.
Further, the silicon-based liquid compound preferably has a 10% thermal mass decrease temperature of 250 ° C. or higher, more preferably 280 ° C. or higher, which is heated from 25 ° C. at 20 ° C./min. Moreover, although an upper limit does not have limitation in particular, For example, 1000 degrees C or less is preferable and 800 degrees C or less is more preferable. According to this aspect, it is easy to form an adhesive layer having excellent heat resistance. In addition, mass decreasing temperature is a value measured on the said temperature rising conditions in nitrogen stream by the thermogravimetry apparatus (TGA).
 本発明で用いるケイ素系液体状化合物は、親油基を含有することが好ましい。親油基としては、直鎖または分岐のアルキル基、シクロアルキル基、芳香族基などが挙げられる。 The silicon-based liquid compound used in the present invention preferably contains a lipophilic group. Examples of the lipophilic group include linear or branched alkyl groups, cycloalkyl groups, and aromatic groups.
 アルキル基の炭素数は、1~30が好ましく、1~10がより好ましく、1~3がさらに好ましい。アルキル基の具定例としては、例えば、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ドデシル基、テトラデシル基、オクタデシル基、イソプロピル基、イソブチル基、sec-ブチル基、tert-ブチル基、1-エチルペンチル基、2-エチルヘキシル基が挙げられる。
 アルキル基は、置換基を有していてもよい。置換基としては、ハロゲン原子、アルコキシ基、芳香族基などが挙げられる。ハロゲン原子としては、塩素原子、フッ素原子、臭素原子、ヨウ素原子などが挙げられ、フッ素原子が好ましい。
 アルコキシ基の炭素数は、1~30が好ましく、1~20がより好ましく、1~10がさらに好ましい。アルコキシ基は、直鎖または分岐が好ましい。
 芳香族基は、単環であってもよく、多環であってもよい。芳香族基の炭素数は、6~20が好ましく、6~14がより好ましく、6~10が特に好ましい。
The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 10 carbon atoms, and still more preferably 1 to 3 carbon atoms. Specific examples of alkyl groups include, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, octadecyl, isopropyl Group, isobutyl group, sec-butyl group, tert-butyl group, 1-ethylpentyl group, 2-ethylhexyl group.
The alkyl group may have a substituent. Examples of the substituent include a halogen atom, an alkoxy group, and an aromatic group. Examples of the halogen atom include a chlorine atom, a fluorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
The alkoxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms. The alkoxy group is preferably linear or branched.
The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and particularly preferably 6 to 10.
 シクロアルキル基は、単環であってもよく、多環であってもよい。シクロアルキル基の炭素数は、3~30が好ましく、4~30がより好ましく、6~30がさらに好ましく、6~20が特に好ましい。単環のシクロアルキル基としては、例えば、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基及びシクロオクチル基が挙げられる。多環のシクロアルキル基としては、例えば、アダマンチル基、ノルボルニル基、ボルニル基、カンフェニル基、デカヒドロナフチル基、トリシクロデカニル基、テトラシクロデカニル基、カンホロイル基、ジシクロヘキシル基及びピネニル基が挙げられる。
 シクロアルキル基は、上述した置換基を有していてもよい。
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group preferably has 3 to 30 carbon atoms, more preferably 4 to 30 carbon atoms, still more preferably 6 to 30 carbon atoms, and particularly preferably 6 to 20 carbon atoms. Examples of the monocyclic cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group. Examples of the polycyclic cycloalkyl group include adamantyl group, norbornyl group, bornyl group, camphenyl group, decahydronaphthyl group, tricyclodecanyl group, tetracyclodecanyl group, camphoroyl group, dicyclohexyl group and pinenyl group. Can be mentioned.
The cycloalkyl group may have the substituent described above.
 芳香族基は、単環であってもよく、多環であってもよい。芳香族基の炭素数は、6~20が好ましく、6~14がより好ましく、6~10が特に好ましい。芳香族基は、環を構成する元素に、ヘテロ原子(例えば、窒素原子、酸素原子、硫黄原子など)を含まないことが好ましい。芳香族基の具体例としては、ベンゼン環、ナフタレン環、ペンタレン環、インデン環、アズレン環、ヘプタレン環、インデセン環、ペリレン環、ペンタセン環、アセナフテン環、フェナントレン環、アントラセン環、ナフタセン環、クリセン環、トリフェニレン環、フルオレン環、ビフェニル環、ピロール環、フラン環、チオフェン環、イミダゾール環、オキサゾール環、チアゾール環、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、インドリジン環、インドール環、ベンゾフラン環、ベンゾチオフェン環、イソベンゾフラン環、キノリジン環、キノリン環、フタラジン環、ナフチリジン環、キノキサリン環、キノキサゾリン環、イソキノリン環、カルバゾール環、フェナントリジン環、アクリジン環、フェナントロリン環、チアントレン環、クロメン環、キサンテン環、フェノキサチイン環、フェノチアジン環、および、フェナジン環が挙げられ、ベンゼン環が好ましい。
 芳香族基は、上述した置換基を有していてもよい。置換基としては、直鎖アルキル基が好ましい。
The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and particularly preferably 6 to 10. It is preferable that the aromatic group does not contain a hetero atom (for example, a nitrogen atom, an oxygen atom, a sulfur atom, etc.) in the elements constituting the ring. Specific examples of the aromatic group include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acenaphthene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene ring , Triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, thiazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, Benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthroline ring, thia Train ring, chromene ring, xanthene ring, phenoxathiin ring, a phenothiazine ring, and include phenazine ring, a benzene ring is preferred.
The aromatic group may have the above-described substituent. As the substituent, a linear alkyl group is preferable.
 ケイ素系液体状化合物は、下記一般式で表される化合物であることが好ましい。
Figure JPOXMLDOC01-appb-C000001
 上記一般式中のR1およびR2は、それぞれ独立に、直鎖もしくは分岐のアルキル基、シクロアルキル基または芳香族基であり、R1およびR2の一方は、ポリエーテル鎖を含む有機基であってもよい。
 また、L1は、-O-、またはポリエーテル鎖を含む連結基を表す。
The silicon-based liquid compound is preferably a compound represented by the following general formula.
Figure JPOXMLDOC01-appb-C000001
R 1 and R 2 in the above general formula are each independently a linear or branched alkyl group, cycloalkyl group or aromatic group, and one of R 1 and R 2 is an organic group containing a polyether chain. It may be.
L 1 represents —O— or a linking group containing a polyether chain.
 上記一般式中のR1およびR2としての、直鎖もしくは分岐のアルキル基、シクロアルキル基または芳香族基の好ましい範囲は、上記親油基の所で述べた、直鎖もしくは分岐のアルキル基、シクロアルキル基または芳香族基と同義であり好ましい範囲も同様である。
 また、上記一般式において、R1およびR2の一方は、ポリエーテル鎖を含む有機基であることも好ましい形態として挙げられる。上記ポリエーテル鎖を含む有機基におけるポリエーテル構造としては、エーテル結合を複数有する構造であればよく、特に限定されないが、例えば、ポリエチレングリコール構造(ポリエチレンオキサイド構造)、ポリプロピレングリコール構造(ポリプロピレンオキサイド構造)、ポリブチレングリコール(ポリテトラメチレングリコール)構造、複数種のアルキレングリコール(又はアルキレンオキサイド)に由来するポリエーテル構造(例えば、ポリ(プロピレングリコール/エチレングリコール)構造など)等のポリオキシアルキレン構造が挙げられる。なお、複数種のアルキレングリコールに由来するポリエーテル構造における、それぞれのアルキレングリコールの付加形態は、ブロック型(ブロック共重合型)であってもよいし、ランダム型(ランダム共重合型)であってもよい。
The preferred range of the linear or branched alkyl group, cycloalkyl group or aromatic group as R 1 and R 2 in the above general formula is the linear or branched alkyl group described for the lipophilic group. And the same as the preferable range.
In the above general formula, one of R 1 and R 2 is preferably an organic group containing a polyether chain. The polyether structure in the organic group containing a polyether chain is not particularly limited as long as it has a structure having a plurality of ether bonds. For example, polyethylene glycol structure (polyethylene oxide structure), polypropylene glycol structure (polypropylene oxide structure) And polyoxyalkylene structures such as polybutylene glycol (polytetramethylene glycol) structures and polyether structures derived from multiple types of alkylene glycol (or alkylene oxide) (for example, poly (propylene glycol / ethylene glycol) structures). It is done. In addition, the addition form of each alkylene glycol in the polyether structure derived from a plurality of types of alkylene glycols may be a block type (block copolymer type) or a random type (random copolymer type). Also good.
 上記ポリエーテル鎖を含む有機基は、上記ポリエーテル構造のみからなる有機基であってもよいし、上記ポリエーテル構造の1又は2以上と、1又は2以上の連結基(1以上の原子を有する二価の基)とが連結した構造を有する有機基であってもよい。上記ポリエーテル鎖を含む有機基における連結基としては、例えば、2価の炭化水素基(特に、直鎖又は分岐鎖状のアルキレン基)、チオエーテル基(-S-)、エステル基(-COO-)、アミド基(-CONH-)、カルボニル基(-CO-)、カーボネート基(-OCOO-)、これらが2以上結合した基などが挙げられる。 The organic group containing the polyether chain may be an organic group consisting only of the polyether structure, or one or two or more of the polyether structure and one or two or more linking groups (one or more atoms may be bonded). It may be an organic group having a structure in which a divalent group) is linked. Examples of the linking group in the organic group containing a polyether chain include, for example, a divalent hydrocarbon group (particularly, a linear or branched alkylene group), a thioether group (—S—), an ester group (—COO—). ), An amide group (—CONH—), a carbonyl group (—CO—), a carbonate group (—OCOO—), a group in which two or more of these are bonded, and the like.
 また、上記一般式中のL1のポリエーテル鎖としては、上述したエーテル結合を複数有する構造を有すればよく、特に限定はないが、上述したエーテル結合を複数有する構造が好ましく使用できる。また、ポリエーテル鎖は、ポリエーテル構造のみからなる有機基であってもよいし、上記ポリエーテル構造の1又は2以上と、1又は2以上の連結基(1以上の原子を有する二価の基)とが連結した構造を有する有機基であってもよい。上記ポリエーテル鎖を含む有機基における連結基としては、例えば、2価の炭化水素基(特に、直鎖又は分岐鎖状のアルキレン基)、チオエーテル基(-S-)、エステル基(-COO-)、アミド基(-CONH-)、カルボニル基(-CO-)、カーボネート基(-OCOO-)、これらが2以上結合した基などが挙げられる。 Further, the polyether chain of L 1 in the above general formula is not particularly limited as long as it has a structure having a plurality of the ether bonds described above, but a structure having a plurality of the ether bonds described above can be preferably used. Further, the polyether chain may be an organic group consisting of only a polyether structure, or one or two or more of the above polyether structure and one or two or more linking groups (a divalent having one or more atoms). And an organic group having a structure in which the group) is linked. Examples of the linking group in the organic group containing a polyether chain include, for example, a divalent hydrocarbon group (particularly, a linear or branched alkylene group), a thioether group (—S—), an ester group (—COO—). ), An amide group (—CONH—), a carbonyl group (—CO—), a carbonate group (—OCOO—), a group in which two or more of these are bonded, and the like.
 本発明におけるケイ素系液体状化合物は、ジメチルポリシロキサン、メチルフェニルポリシロキサン、ジフェニルポリシロキサンおよびポリエーテル変性ポリシロキサンから選択される少なくとも1種がより好ましい。 The silicon-based liquid compound in the present invention is more preferably at least one selected from dimethylpolysiloxane, methylphenylpolysiloxane, diphenylpolysiloxane, and polyether-modified polysiloxane.
 ケイ素系液体状化合物は、例えば、特開昭62-36663号、特開昭61-226746号、特開昭61-226745号、特開昭62-170950号、特開昭63-34540号、特開平7-230165号、特開平8-62834号、特開平9-54432号、特開平9-5988号、特開2001-330953号各公報記載の界面活性剤のうち、25℃で液体状のものを挙げることができる。
 市販品としては、商品名「BYK-300」、「BYK-301/302」、「BYK-306」、「BYK-307」、「BYK-310」、「BYK-315」、「BYK-313」、「BYK-320」、「BYK-322」、「BYK-323」、「BYK-325」、「BYK-330」、「BYK-331」、「BYK-333」、「BYK-337」、「BYK-341」、「BYK-344」、「BYK-345/346」、「BYK-347」、「BYK-348」、「BYK-349」、「BYK-370」、「BYK-375」、「BYK-377」、「BYK-378」、「BYK-UV3500」、「BYK-UV3510」、「BYK-UV3570」、「BYK-3550」、「BYK-SILCLEAN3700」、「BYK-SILCLEAN3720」(以上、ビックケミー・ジャパン(株)製)、商品名「AC FS 180」、「AC FS 360」、「AC S 20」(以上、Algin Chemie製)、商品名「ポリフローKL-400X」、「ポリフローKL-400HF」、「ポリフローKL-401」、「ポリフローKL-402」、「ポリフローKL-403」、「ポリフローKL-404」、「ポリフローKL-700」(以上、共栄社化学(株)製)、商品名「KP-301」、「KP-306」、「KP-109」、「KP-310」、「KP-310B」、「KP-323」、「KP-326」、「KP-341」、「KP-104」、「KP-110」、「KP-112」、「KP-360A」、「KP-361」、「KP-354」、「KP-355」、「KP―356」、「KP-357」、「KP-358」、「KP-359」、「KP-362」、「KP-365」、「KP-366」、「KP-368」、「KP-369」、「KP-330」、「KP-650」、「KP-651」、「KP-390」、「KP-391」、「KP-392」(以上、信越化学工業(株)製)、商品名「LP-7001」、「LP-7002」、「SH28PA」、「8032 ADDITIVE」、「57 ADDITIVE」、「L-7604」、「FZ-2110」、「FZ-2105」、「67 ADDITIVE」、「8618 ADDITIVE」、「3 ADDITIVE」、「56 ADDITIVE」(以上、東レ・ダウコーニング(株)製)、「TEGO WET 270」(エボニック・デグサ・ジャパン(株)製)、「NBX-15」(ネオス(株)製)などの市販品を使用することができる。
Examples of silicon-based liquid compounds include JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950, JP-A-63-34540, Of the surfactants described in Kaihei 7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988 and JP-A-2001-330953, those which are liquid at 25 ° C. Can be mentioned.
Commercially available products include “BYK-300”, “BYK-301 / 302”, “BYK-306”, “BYK-307”, “BYK-310”, “BYK-315”, “BYK-313”. , “BYK-320”, “BYK-322”, “BYK-323”, “BYK-325”, “BYK-330”, “BYK-331”, “BYK-333”, “BYK-337”, “ BYK-341, BYK-344, BYK-345 / 346, BYK-347, BYK-348, BYK-349, BYK-370, BYK-375, BYK-377, BYK-378, BYK-UV3500, BYK-UV3510, BYK-UV3570, BYK-3550, BYK-SILCLEAN3 00 ”,“ BYK-SILCLEAN3720 ”(above, manufactured by Big Chemie Japan Co., Ltd.), trade names“ AC FS 180 ”,“ AC FS 360 ”,“ AC S 20 ”(above, made by Algin Chemie), trade name“ "Polyflow KL-400X", "Polyflow KL-400HF", "Polyflow KL-401", "Polyflow KL-402", "Polyflow KL-403", "Polyflow KL-404", "Polyflow KL-700" Kyoeisha Chemical Co., Ltd.), trade names “KP-301”, “KP-306”, “KP-109”, “KP-310”, “KP-310B”, “KP-323”, “KP-326” ”,“ KP-341 ”,“ KP-104 ”,“ KP-110 ”,“ KP-112 ”,“ KP-360A ”,“ KP-361 ” “KP-354”, “KP-355”, “KP-356”, “KP-357”, “KP-358”, “KP-359”, “KP-362”, “KP-365”, “KP” -366 "," KP-368 "," KP-369 "," KP-330 "," KP-650 "," KP-651 "," KP-390 "," KP-391 "," KP-392 " (Shin-Etsu Chemical Co., Ltd.), trade names “LP-7001”, “LP-7002”, “SH28PA”, “8032 ADDIIVE”, “57 ADDIIVE”, “L-7604”, “FZ-” "2110", "FZ-2105", "67 ADDITIVE", "8618 ADDITIVE", "3 ADDITIVE", "56 ADDITIVE" (above, manufactured by Toray Dow Corning Co., Ltd.), " EGO WET 270 "(manufactured by Evonik Degussa Japan Co., Ltd.), can be used commercially available products such as" NBX-15 "(manufactured by Neos Co., Ltd.).
 本発明の仮止め接着剤における、ケイ素系液体状化合物の含有量は、仮止め接着剤中に含まれるエラストマーの合計量に対し、0.009質量%以上が好ましく、0.01質量%以上がより好ましく、0.05質量%以上がさらに好ましく、0.1質量%以上であることが特に好ましく、0.2質量%以上であることがより一層好ましい。また、上限値としては、10質量%以下であることが好ましく、5質量%以下であることがさらに好ましく、2.5質量%未満であることがより好ましく、1質量%以下であることが一層好ましく、0.6質量%以下であることがより一層好ましい。
 ケイ素系液体状化合物の含有量が上記範囲であれば、接着性および剥離性により優れる。特に本発明では、仮止め接着剤の量が少なくても、本発明の効果を達成できる点で価値が高い。
 ケイ素系液体状化合物は、1種単独であってもよいし、2種以上を併用してもよい。2種以上を併用する場合は、合計の含有量が上記範囲であることが好ましい。
The content of the silicon-based liquid compound in the temporary fixing adhesive of the present invention is preferably 0.009% by mass or more and 0.01% by mass or more with respect to the total amount of elastomer contained in the temporary fixing adhesive. More preferably, 0.05% by mass or more is further preferable, 0.1% by mass or more is particularly preferable, and 0.2% by mass or more is even more preferable. The upper limit is preferably 10% by mass or less, more preferably 5% by mass or less, more preferably less than 2.5% by mass, and even more preferably 1% by mass or less. Preferably, it is 0.6% by mass or less.
If content of a silicon-type liquid compound is the said range, it is excellent by adhesiveness and peelability. In particular, the present invention is highly valuable in that the effects of the present invention can be achieved even if the amount of the temporary fixing adhesive is small.
One silicon-based liquid compound may be used alone, or two or more silicon-based liquid compounds may be used in combination. When using 2 or more types together, it is preferable that total content is the said range.
<<エラストマー>>
 本発明の仮止め接着剤は、エラストマーを含有する。エラストマーを使用することで、支持体や基材の微細な凹凸にも追従し適度なアンカー効果により、接着性に優れた接着層を形成できる。また、基材から支持体を剥離する際に、基材などに応力をかけることなく、支持体を基材から剥離でき、基材上のデバイス等の破損や剥落を防止できる。
 なお、本明細書において、エラストマーとは、弾性変形を示す高分子化合物を表す。すなわち外力を加えたときに、その外力に応じて瞬時に変形し、かつ外力を除いたときには、短時間に元の形状を回復する性質を有する高分子化合物と定義する。
<< Elastomer >>
The temporary fix adhesive of the present invention contains an elastomer. By using an elastomer, it is possible to form an adhesive layer having excellent adhesiveness by following the fine irregularities of the support and the base material and by an appropriate anchor effect. Moreover, when peeling a support body from a base material, a support body can be peeled from a base material, without applying stress to a base material etc., and damage or peeling of the device etc. on a base material can be prevented.
In addition, in this specification, an elastomer represents the high molecular compound which shows elastic deformation. That is, when an external force is applied, the polymer compound is defined as a polymer compound that has the property of instantly deforming according to the external force and recovering the original shape in a short time when the external force is removed.
 本発明で必須成分として含まれるエラストマーは、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXであり、さらに、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYも含むことが好ましい。
 エラストマーXとエラストマーYとを併用することで、優れた剥離性を有しつつ、基材の研磨面の平坦性(以下、平坦研磨性ともいう)が良好で、研磨後の基材の反りの発生を効果的に抑制できる。このような効果が得られるメカニズムは、以下によるものと推測できる。
 すなわち、上記エラストマーXは、比較的硬い材料であるため、エラストマーXを含むことで、剥離性に優れた接着層を製造できる。また、エラストマーYは、比較的柔らかい材料であるため、弾性を有する接着層を形成しやすい。このため、本発明の仮止め接着剤を用いて基材と支持体との積層体を製造し、基材を研磨して薄膜化する際に、研磨時の圧力が局所的に加わっても、接着層が弾性変形して元の形状に戻り易くできる。その結果、優れた平坦研磨性が得られる。また、研磨後の積層体を、加熱処理し、その後冷却しても、接着層によって、冷却時に発生する内部応力を緩和でき、反りの発生を効果的に抑制できる。
 また、エラストマーXにエラストマーYを配合しても、エラストマーXが相分離する領域が存在すること等により、エラストマーXによる優れた剥離性は十分に達成される。
The elastomer included as an essential component in the present invention is an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, and further, repeating units derived from styrene are all repeated. It is also preferable to include the elastomer Y contained in the unit at a ratio of 10% by mass or more and less than 50% by mass.
By using the elastomer X and the elastomer Y in combination, while having excellent peelability, the flatness of the polished surface of the substrate (hereinafter also referred to as flat polishing property) is good, and the warpage of the substrate after polishing is improved. Generation can be effectively suppressed. The mechanism by which such an effect is obtained can be assumed to be as follows.
That is, since the elastomer X is a relatively hard material, an adhesive layer having excellent peelability can be produced by including the elastomer X. In addition, since the elastomer Y is a relatively soft material, it is easy to form an adhesive layer having elasticity. For this reason, when manufacturing the laminated body of a base material and a support using the temporary fixing adhesive of the present invention, and polishing the base material into a thin film, even if pressure during polishing is locally applied, The adhesive layer can be easily elastically deformed to return to the original shape. As a result, excellent flat polishing properties can be obtained. Further, even if the laminated body after polishing is subjected to heat treatment and then cooled, the adhesive layer can relieve internal stress generated during cooling and effectively suppress the occurrence of warpage.
Moreover, even if the elastomer Y is blended with the elastomer X, the excellent peelability by the elastomer X is sufficiently achieved due to the presence of a region where the elastomer X is phase-separated.
 以下、エラストマーXとエラストマーY(これらを併せて、「ポリスチレン系エラストマー」という)に共通する好ましい条件について述べる。 Hereinafter, preferable conditions common to the elastomer X and the elastomer Y (they are collectively referred to as “polystyrene elastomer”) will be described.
 ポリスチレン系エラストマーとしては、特に制限はなく、目的に応じて適宜選択することができる。例えば、スチレン-ブタジエン-スチレンブロック共重合体(SBS)、スチレン-イソプレン-スチレンブロック共重合体(SIS)、スチレン-エチレン-ブチレン-スチレンブロック共重合体(SEBS)、スチレン-ブタジエン-ブチレン-スチレン共重合体(SBBS)およびこれらの水添物、スチレン-エチレン-プロピレン-スチレンブロック共重合体(SEPS)、スチレン-エチレン-エチレン-プロピレン-スチレンブロック共重合体等が挙げられる。 There is no restriction | limiting in particular as a polystyrene-type elastomer, According to the objective, it can select suitably. For example, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-butadiene-butylene-styrene. Examples thereof include copolymers (SBBS) and hydrogenated products thereof, styrene-ethylene-propylene-styrene block copolymers (SEPS), and styrene-ethylene-ethylene-propylene-styrene block copolymers.
 ポリスチレン系エラストマーの重量平均分子量は、2,000~200,000が好ましく、10,000~200,000がより好ましく、50,000~100,000がさらに好ましい。この範囲にあることで、溶剤への仮止め接着剤の溶解性が優れることとなり、塗布性が向上する。また、基材を支持体から剥離後、残存する接着層を除去する際にも、溶剤への溶解性が優れるため、基材や支持体に残渣が残らない利点がある。 The weight average molecular weight of the polystyrene-based elastomer is preferably from 2,000 to 200,000, more preferably from 10,000 to 200,000, and even more preferably from 50,000 to 100,000. By being in this range, the solubility of the temporary fixing adhesive in a solvent will be excellent, and the applicability will be improved. In addition, when the remaining adhesive layer is removed after peeling the substrate from the support, there is an advantage that no residue remains on the substrate or the support because of excellent solubility in a solvent.
 本発明において、ポリスチレン系エラストマーとしては、ブロック共重合体、ランダム共重合体、グラフト共重合体が挙げられ、ブロック共重合体が好ましく、片末端または両末端がスチレンのブロック共重合体であることがより好ましく、両末端がスチレンのブロック共重合体であることが特に好ましい。ポリスチレン系エラストマーの両端をスチレンのブロック共重合体(スチレン由来の繰り返し単位)とすると、熱安定性がより向上する傾向にある。これは、耐熱性の高いスチレン由来の繰り返し単位が末端に存在することとなるためである。特に、スチレン由来の繰り返し単位のブロック部位が反応性のポリスチレン系ハードブロックであることにより、耐熱性、耐薬品性により優れる傾向にあり好ましい。また、これらをブロック共重合体とすると、200℃以上においてハードブロックとソフトブロックでの相分離を行うと考えられる。その相分離の形状はデバイスウエハの基材表面の凹凸の発生の抑制に寄与すると考えられる。加えて、このような樹脂は、溶剤への溶解性およびレジスト溶剤への耐性の観点からもより好ましい。 In the present invention, examples of the polystyrene-based elastomer include block copolymers, random copolymers, and graft copolymers. Block copolymers are preferred, and one or both ends are block copolymers of styrene. Is more preferable, and it is particularly preferable that both ends are block copolymers of styrene. If both ends of the polystyrene-based elastomer are made of a styrene block copolymer (a repeating unit derived from styrene), the thermal stability tends to be further improved. This is because a repeating unit derived from styrene having high heat resistance is present at the terminal. In particular, the block part of the repeating unit derived from styrene is preferably a reactive polystyrene hard block, which tends to be more excellent in heat resistance and chemical resistance. Moreover, when these are made into a block copolymer, it is thought that phase-separation by a hard block and a soft block will be performed at 200 degreeC or more. The shape of the phase separation is considered to contribute to the suppression of the occurrence of irregularities on the substrate surface of the device wafer. In addition, such a resin is more preferable from the viewpoint of solubility in a solvent and resistance to a resist solvent.
 本発明において、ポリスチレン系エラストマーは、水添物であることが好ましい。ポリスチレン系エラストマーが水添物であると、熱安定性や保存安定性が向上する。さらには、剥離性および剥離後の接着層の洗浄除去性が向上する。なお、水添物とは、エラストマーが水添(水素添加)された構造の重合体を意味する。 In the present invention, the polystyrene elastomer is preferably a hydrogenated product. When the polystyrene-based elastomer is a hydrogenated product, thermal stability and storage stability are improved. Furthermore, the peelability and the cleaning / removability of the adhesive layer after peeling are improved. The hydrogenated product means a polymer having a structure in which an elastomer is hydrogenated (hydrogenated).
 ポリスチレン系エラストマーは、25℃から、20℃/分で昇温した5%熱質量減少温度が、250℃以上であることが好ましく、300℃以上であることがより好ましく、350℃以上であることがさらに好ましく、400℃以上であることが特に好ましい。また、上限値は特に限定されないが、例えば1000℃以下が好ましく、800℃以下がより好ましい。この態様によれば、耐熱性に優れた接着層を形成しやすい。
 ポリスチレン系エラストマーは、元の大きさを100%としたときに、室温(20℃)において小さな外力で200%まで変形させることができ、かつ外力を除いたときに、短時間で130%以下に戻る性質を有することが好ましい。
The polystyrene elastomer has a 5% thermal mass reduction temperature of 25 ° C. raised at 20 ° C./min, preferably 250 ° C. or higher, more preferably 300 ° C. or higher, and 350 ° C. or higher. Is more preferable, and it is especially preferable that it is 400 degreeC or more. Moreover, although an upper limit is not specifically limited, For example, 1000 degrees C or less is preferable and 800 degrees C or less is more preferable. According to this aspect, it is easy to form an adhesive layer having excellent heat resistance.
Polystyrene elastomer can be deformed up to 200% with a small external force at room temperature (20 ° C.) when the original size is 100%, and within 130% or less in a short time when the external force is removed. It preferably has a returning property.
 ポリスチレン系エラストマーの不飽和二重結合量としては、加熱工程後の剥離性の観点から、15mmol/g未満であることが好ましく、7mmol/g以下であることがより好ましく、5mmol/g未満であることがさらに好ましく、0.5mmol/g未満であることが一層好ましい。下限値については、特に定めるものではないが、例えば、0.001mmol/g以上とすることができる。
 なお、ここでいう不飽和二重結合量は、スチレン由来のベンゼン環内の不飽和二重結合を含まない。不飽和二重結合量は、核磁気共鳴(NMR)測定により算出することができる。
The amount of unsaturated double bonds in the polystyrene-based elastomer is preferably less than 15 mmol / g, more preferably less than 7 mmol / g, and less than 5 mmol / g from the viewpoint of peelability after the heating step. More preferably, it is more preferably less than 0.5 mmol / g. The lower limit is not particularly defined, but can be, for example, 0.001 mmol / g or more.
In addition, the amount of unsaturated double bonds here does not include the unsaturated double bond in the benzene ring derived from styrene. The amount of unsaturated double bonds can be calculated by nuclear magnetic resonance (NMR) measurement.
 なお、本明細書において「スチレン由来の繰り返し単位」とは、スチレンまたはスチレン誘導体を重合した際に重合体に含まれるスチレン由来の構成単位であり、置換基を有していてもよい。スチレン誘導体としては、例えば、α-メチルスチレン、3-メチルスチレン、4-プロピルスチレン、4-シクロヘキシルスチレン等が挙げられる。置換基としては、例えば、炭素数1~5のアルキル基、炭素数1~5のアルコキシ基、炭素数1~5のアルコキシアルキル基、アセトキシ基、カルボキシル基等が挙げられる。 In the present specification, “a repeating unit derived from styrene” is a structural unit derived from styrene contained in a polymer when styrene or a styrene derivative is polymerized, and may have a substituent. Examples of the styrene derivative include α-methylstyrene, 3-methylstyrene, 4-propylstyrene, 4-cyclohexylstyrene, and the like. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an acetoxy group, and a carboxyl group.
 ポリスチレン系エラストマーの市販品としては、例えば、タフプレンA、タフプレン125、タフプレン126S、ソルプレンT、アサプレンT-411、アサプレンT-432、アサプレンT-437、アサプレンT-438、アサプレンT-439、タフテックH1272、タフテックP1500、タフテックH1052、タフテックH1062、タフテックM1943、タフテックM1911、タフテックH1041、タフテックMP10、タフテックM1913、タフテックH1051、タフテックH1053、タフテックP2000、タフテックH1043(以上、商品名、旭化成(株)製)、エラストマーAR-850C、エラストマーAR-815C、エラストマーAR-840C、エラストマーAR-830C、エラストマーAR-860C、エラストマーAR-875C、エラストマーAR-885C、エラストマーAR-SC-15、エラストマーAR-SC-0、エラストマーAR-SC-5、エラストマーAR-710、エラストマーAR-SC-65、エラストマーAR-SC-30、エラストマーAR-SC-75、エラストマーAR-SC-45、エラストマーAR-720、エラストマーAR-741、エラストマーAR-731、エラストマーAR-750、エラストマーAR-760、エラストマーAR-770、エラストマーAR-781、エラストマーAR-791、エラストマーAR-FL-75N、エラストマーAR-FL-85N、エラストマーAR-FL-60N、エラストマーAR-1050、エラストマーAR-1060、エラストマーAR-1040(以上、商品名、アロン化成製)、クレイトンD1111、クレイトンD1113、クレイトンD1114、クレイトンD1117、クレイトンD1119、クレイトンD1124、クレイトンD1126、クレイトンD1161、クレイトンD1162、クレイトンD1163、クレイトンD1164、クレイトンD1165、クレイトンD1183、クレイトンD1193、クレイトンDX406、クレイトンD4141、クレイトンD4150、クレイトンD4153、クレイトンD4158、クレイトンD4270、クレイトンD 4271、クレイトンD 4433、クレイトンD 1170、クレイトンD 1171、クレイトンD 1173、カリフレックスIR0307、カリフレックスIR 0310、カリフレックスIR 0401、クレイトンD0242、クレイトンD1101、クレイトンD1102、クレイトンD1116、クレイトンD1118、クレイトンD1133、クレイトンD1152、 Examples of commercially available polystyrene elastomers include Tufprene A, Tufprene 125, Tufprene 126S, Solprene T, Asaprene T-411, Asaprene T-432, Asaprene T-437, Asaprene T-438, Asaprene T-439, Tuftec H1272 Tuftec P1500, Tuftec H1052, Tuftec H1062, Tuftec M1943, Tuftec M1911, Tuftec H1041, Tuftec MP10, Tuftec M1913, Tuftec H1051, Tuftech H1053, Tuftec P2000, Tuftec H1043 (trade name, manufactured by Asahi Kasei Elastomer Co., Ltd.) AR-850C, Elastomer AR-815C, Elastomer AR-840C, Elastomer AR-830C, Elasto -AR-860C, Elastomer AR-875C, Elastomer AR-885C, Elastomer AR-SC-15, Elastomer AR-SC-0, Elastomer AR-SC-5, Elastomer AR-710, Elastomer AR-SC-65, Elastomer AR -SC-30, Elastomer AR-SC-75, Elastomer AR-SC-45, Elastomer AR-720, Elastomer AR-741, Elastomer AR-731, Elastomer AR-750, Elastomer AR-760, Elastomer AR-770, Elastomer AR-781, Elastomer AR-791, Elastomer AR-FL-75N, Elastomer AR-FL-85N, Elastomer AR-FL-60N, Elastomer AR-1050, Elastomer AR-1060 Elastomer AR-1040 (trade name, manufactured by Aron Kasei), Clayton D1111, Clayton D1113, Clayton D1114, Clayton D1117, Clayton D1119, Clayton D1124, Clayton D1126, Clayton D1161, Clayton D1162, Clayton D1163, Clayton D1164, Clayton D1165 Clayton D1183, Clayton D1193, Clayton DX406, Clayton D4141, Clayton D4150, Clayton D4153, Clayton D4158, Clayton D4271, Clayton D 4433, Clayton D 1170, Clayton D 1171, Clayton D 1173, Califlex IR0307 Flex IR 0310, Califlex IR 0401, Clayton D0242, Clayton D1101, Clayton D1102, Clayton D1116, Clayton D1118, Clayton D1133, Clayton D1152,
クレイトンD1153、クレイトンD1155、クレイトンD1184、クレイトンD1186、クレイトンD1189、クレイトンD1191、クレイトンD1192、クレイトンDX405、クレイトンDX408、クレイトンDX410、クレイトンDX414、クレイトンDX415、クレイトンA1535、クレイトンA1536、クレイトンFG1901、クレイトンFG1924、クレイトンG1640、クレイトンG1641、クレイトンG1642、クレイトンG1643、クレイトンG1645、クレイトンG1633、クレイトンG1650、クレイトンG1651、クレイトンG1652、クレイトンG1654、クレイトンG1657、クレイトンG1660、クレイトンG1726、クレイトンG1701、クレイトンG1702、クレイトンG1730、クレイトンG1750、クレイトンG1765、クレイトンG4609、クレイトンG4610(以上、商品名、Kraton社製)、TR2000、TR2001、TR2003、TR2250、TR2500、TR2601、TR2630、TR2787、TR2827、TR1086、TR1600、SIS5002、SIS5200、SIS5250、SIS5405、SIS5505、ダイナロン6100P、ダイナロン4600P、ダイナロン6200P、ダイナロン4630P、ダイナロン8601P、ダイナロン8630P、ダイナロン8600P、ダイナロン8903P、ダイナロン6201B、ダイナロン1321P、ダイナロン1320P、ダイナロン2324P、ダイナロン9901P(以上、商品名、JSR(株)製)、デンカSTRシリーズ(商品名、電気化学工業(株)製)、クインタック3520、クインタック3433N、クインタック3421、クインタック3620、クインタック3450、クインタック3460(以上、商品名、日本ゼオン製)、TPE-SBシリーズ(以上、商品名、住友化学(株)製)、ラバロンシリーズ(商品名、三菱化学(株)製)、セプトン1001、セプトン、8004、セプトン4033、セプトン2104、セプトン8007、セプトン2007、セプトン2004、セプトン2063、セプトンHG252、セプトン8076、セプトン2002、セプトン1020、セプトン8104、セプトン2005、セプトン2006、セプトン4055、セプトン4044、セプトン4077、セプトン4099、セプトン8006、セプトンV9461、セプトンV9475、セプトンV9827、ハイブラー7311、ハイブラー7125、ハイブラー5127、ハイブラー5125(以上、商品名、クラレ製)、スミフレックス(商品名、住友ベークライト(株)製)、レオストマー、アクティマー(以上、商品名、理研ビニル工業製)などが挙げられる。 Clayton D1153, Clayton D1155, Clayton D1184, Clayton D1186, Clayton D1189, Clayton D1191, Clayton DX1192, Clayton DX405, Clayton DX410, Clayton DX414, Clayton DX415, Clayton A1535, Clayton FG1904, Clayton FG1904 G Clayton G1641, Clayton G1642, Clayton G1643, Clayton G1645, Clayton G1633, Clayton G1650, Clayton G1651, Clayton G1652, Clayton G1654, Clayton G1657, Clayton G1660, Clayton G1726, Clayton G1701, Iton G1702, Clayton G1730, Clayton G1750, Clayton G1765, Clayton G4609, Clayton G4610 (above, trade name, manufactured by Kraton), TR2000, TR2001, TR2003, TR2250, TR2500, TR2601, TR2630, TR2787, TR2827, TR1086, TR1600, SIS5002, SIS5200, SIS5250, SIS5405, SIS5505, Dynalon 6100P, Dynalon 4600P, Dynalon 6200P, Dynalon 4630P, Dynalon 8601P, Dynalon 8630P, Dynalon 8600P, Dynalon 8903P, Dynalon 13201P, Dynalon 1321P, Dynalon 1321P Ron 9901P (trade name, manufactured by JSR Corporation), Denka STR series (trade name, manufactured by Denki Kagaku Kogyo Co., Ltd.), Quintac 3520, Quintac 3433N, Quintac 3421, Quintac 3620, Quintac 3450 , Quintac 3460 (above, trade name, manufactured by Zeon Corporation), TPE-SB series (above, trade name, manufactured by Sumitomo Chemical Co., Ltd.), Lavalon series (trade name, manufactured by Mitsubishi Chemical Corporation), Septon 1001, Septon, 8004, septon 4033, septon 2104, septon 8007, septon 2007, septon 2004, septon 2063, septon HG252, septon 8076, septon 2002, septon 1020, septon 8104, septon 2005, septon 2006, septon 4055, septe 4044, Septon 4077, Septon 4099, Septon 8006, Septon V9461, Septon V9475, Septon V9827, Hibler 7311, Hibler 7125, Hibler 5127, Hibler 5125 (above, trade name, manufactured by Kuraray), Sumiflex (trade name, Sumitomo Bakelite) (Manufactured by Riken Vinyl Industry Co., Ltd.) and the like.
 次に、「エラストマーX」に特有の好ましい範囲について述べる。
 エラストマーXは、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーであり、スチレン由来の繰り返し単位の含有量は、50質量%を超えて95質量%以下が好ましく、50質量%を超えて90質量%以下がより好ましく、50質量%を超えて80質量%以下がさらに好ましく、55~75質量%が特に好ましく、56~70質量%が一層好ましい。
 エラストマーXの硬度は、83以上が好ましく、85以上がより好ましく、90以上がさらに好ましい。上限値は、特に定めるものではないが、例えば、99以下である。なお、硬度は、JIS(日本工業規格) K6253の方法に従い、タイプAデュロメーターで測定した値である。
Next, a preferable range specific to “elastomer X” will be described.
Elastomer X is an elastomer containing a repeating unit derived from styrene in a proportion of 50% by mass to 95% by mass in all repeating units, and the content of the repeating unit derived from styrene exceeds 50% by mass and is 95% by mass. % Or more, more than 50% by weight, more preferably 90% by weight or less, more preferably more than 50% by weight and 80% by weight or less, particularly preferably 55 to 75% by weight, even more preferably 56 to 70% by weight. .
The hardness of the elastomer X is preferably 83 or greater, more preferably 85 or greater, and even more preferably 90 or greater. The upper limit value is not particularly defined, but is 99 or less, for example. The hardness is a value measured with a type A durometer according to the method of JIS (Japanese Industrial Standard) K6253.
 次に、「エラストマーY」に特有の好ましい範囲について述べる。
 エラストマーYは、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーであり、スチレン由来の繰り返し単位の含有量は、10~45質量%が好ましく、10~40質量%がより好ましく、12~35質量%がさらに好ましく、13~33質量%が特に好ましい。
 エラストマーYの硬度は、82以下であることが好ましく、80以下であることがより好ましく、78以下であることがさらに好ましい。下限値は、特に定めるものではないが、1以上である。
 また、エラストマーXの硬度と、エラストマーYの硬度の差は、5~40であることが好ましく、10~35であることがより好ましく、15~33であることがさらに好ましく、17~29であることが一層好ましい。このような範囲とすることにより、本発明の効果がより効果的に発揮される。
Next, a preferable range specific to “elastomer Y” will be described.
Elastomer Y is an elastomer that contains repeating units derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units, and the content of repeating units derived from styrene is preferably 10 to 45% by mass, It is more preferably 10 to 40% by mass, further preferably 12 to 35% by mass, and particularly preferably 13 to 33% by mass.
The hardness of the elastomer Y is preferably 82 or less, more preferably 80 or less, and even more preferably 78 or less. The lower limit is not particularly defined but is 1 or more.
Further, the difference between the hardness of the elastomer X and the hardness of the elastomer Y is preferably 5 to 40, more preferably 10 to 35, still more preferably 15 to 33, and more preferably 17 to 29. More preferably. By setting it as such a range, the effect of this invention is exhibited more effectively.
 本発明では、エラストマーXおよびエラストマーY以外の他のエラストマーを配合してもよい。他のエラストマーとしては、ポリエステル系エラストマー、ポリオレフィン系エラストマー、ポリウレタン系エラストマー、ポリアミド系エラストマー、ポリアクリル系エラストマー、シリコーン系エラストマー、ポリイミド系エラストマー、ゴム変性したエポキシ樹脂などが使用できる。 In the present invention, an elastomer other than the elastomer X and the elastomer Y may be blended. Other elastomers that can be used include polyester elastomers, polyolefin elastomers, polyurethane elastomers, polyamide elastomers, polyacryl elastomers, silicone elastomers, polyimide elastomers, rubber-modified epoxy resins, and the like.
 本発明の仮止め接着剤における、エラストマーX、エラストマーYおよび他のエラストマーの合計量は、溶剤を除いた仮止め接着剤の質量に対し、50.00~99.99質量%が好ましく、70.00~99.99質量%がより好ましく、88.00~99.99質量%が特に好ましい。エラストマーの含有量が上記範囲であれば、接着性および剥離性により優れる。
 また、本発明の仮止め接着剤における、エラストマーX、エラストマーYおよび他のエラストマーは、それぞれ、複数種類の組合せであってもよい。
The total amount of elastomer X, elastomer Y and other elastomers in the temporary fixing adhesive of the present invention is preferably 50.00 to 99.99% by mass relative to the mass of the temporary fixing adhesive excluding the solvent. 00 to 99.99 mass% is more preferable, and 88.00 to 99.99 mass% is particularly preferable. If the content of the elastomer is in the above range, it is more excellent in adhesiveness and peelability.
In addition, the elastomer X, the elastomer Y, and the other elastomer in the temporary fixing adhesive of the present invention may be a plurality of combinations.
 本発明の仮止め接着剤に含まれるエラストマーの含有量のうち、エラストマーXとエラストマーYの合計量が全体の90質量%以上を占めることが好ましく、95質量%以上を占めることがより好ましく、98質量%以上を占めることが特に好ましい。
 エラストマーYを配合する場合、上記エラストマーXと上記エラストマーYとの質量比は、エラストマーX:エラストマーY=5:95~95:5が好ましく、20:80~90:10がより好ましく、40:60~85:15が特に好ましい。上記範囲であれば、反り抑制と剥離性がより効果的に得られる。
Of the elastomer content contained in the temporary adhesive of the present invention, the total amount of elastomer X and elastomer Y preferably accounts for 90% by mass or more, more preferably 95% by mass or more, 98 It is particularly preferable to occupy at least mass%.
When the elastomer Y is blended, the mass ratio of the elastomer X to the elastomer Y is preferably elastomer X: elastomer Y = 5: 95 to 95: 5, more preferably 20:80 to 90:10, and 40:60. ~ 85: 15 is particularly preferred. If it is the said range, curvature suppression and peelability will be obtained more effectively.
<<酸化防止剤>>
 本発明の仮止め接着剤は、加熱時の酸化に起因するエラストマーの低分子化やゲル化を防止する観点から、酸化防止剤を含有してもよい。酸化防止剤としては、フェノール系酸化防止剤、硫黄系酸化防止剤、リン系酸化防止剤、キノン系酸化防止剤、アミン系酸化防止剤などが使用できる。
 フェノール系酸化防止剤としては例えば、パラ-メトキシフェノール、2,6-ジ-tert-ブチル-4-メチルフェノール、BASF(株)製「Irganox1010」、「Irganox1330」、「Irganox3114」、「Irganox1035」、住友化学(株)製「Sumilizer MDP-S」、「Sumilizer GA-80」などが挙げられる。
 硫黄系酸化防止剤としては例えば、3,3’-チオジプロピオネートジステアリル、住友化学(株)製「Sumilizer TPM」、「Sumilizer TPS」、「Sumilizer TP-D」などが挙げられる。
 リン系酸化防止剤としては例えば、トリス(2,4-ジ-tert-ブチルフェニル)ホスフィト、ビス(2,4-ジ-tert-ブチルフェニル)ペンタエリスリトールジホスフィト、ポリ(ジプロピレングリコール)フェニルホスフィト、ジフェニルイソデシルホスフィト、2-エチルヘキシルジフェニルホスフィト、トリフェニルホスフィト、BASF(株)製「Irgafos168」、「Irgafos38」などが挙げられる。
 キノン系酸化防止剤としては例えば、パラ-ベンゾキノン、2-tert-ブチル-1,4-ベンゾキノンなどが挙げられる。
 アミン系酸化防止剤としては例えば、ジメチルアニリンやフェノチアジンなどが挙げられる。
 上記の酸化防止剤の中で、Irganox1010、Irganox1330、3,3’-チオジプロピオネートジステアリル、Sumilizer TP-Dが好ましく、Irganox1010、Irganox1330がより好ましく、Irganox1010が特に好ましい。
 また、上記酸化防止剤のうち、フェノール系酸化防止剤と、硫黄系酸化防止剤またはリン系酸化防止剤とを併用することが好ましく、フェノール系酸化防止剤と硫黄系酸化防止剤とを併用することが特に好ましい。特に、エラストマーとして、ポリスチレン系エラストマーを使用した場合において、フェノール系酸化防止剤と硫黄系酸化防止剤とを併用することが好ましい。このような組み合わせにすることにより、酸化反応に起因するエラストマーの劣化を、効率よく抑制できる効果が期待できる。フェノール系酸化防止剤と硫黄系酸化防止剤とを併用する場合、フェノール系酸化防止剤と硫黄系酸化防止剤との質量比は、フェノール系酸化防止剤:硫黄系酸化防止剤=95:5~5:95が好ましく、25:75~75:25がより好ましい。
 酸化防止剤の組み合わせとしては、Irganox1010とSumilizer TP-D、Irganox1330とSumilizer TP-D、および、Sumilizer GA-80とSumilizer TP-Dが好ましく、Irganox1010とSumilizer TP-D、Irganox1330とSumilizer TP-Dがより好ましく、Irganox1010とSumilizer TP-Dが特に好ましい。
<< Antioxidant >>
The temporary tacking adhesive of the present invention may contain an antioxidant from the viewpoint of preventing low molecular weight and gelation of the elastomer due to oxidation during heating. As the antioxidant, a phenol-based antioxidant, a sulfur-based antioxidant, a phosphorus-based antioxidant, a quinone-based antioxidant, an amine-based antioxidant, and the like can be used.
Examples of phenolic antioxidants include para-methoxyphenol, 2,6-di-tert-butyl-4-methylphenol, “Irganox 1010”, “Irganox 1330”, “Irganox 3114”, “Irganox 1035” manufactured by BASF Corporation, Examples thereof include “Sumilizer MDP-S” and “Sumilizer GA-80” manufactured by Sumitomo Chemical Co., Ltd.
Examples of the sulfur-based antioxidant include 3,3′-thiodipropionate distearyl, “Sumilizer TPM”, “Sumilizer TPS”, “Sumilizer TP-D” manufactured by Sumitomo Chemical Co., Ltd., and the like.
Examples of phosphorus antioxidants include tris (2,4-di-tert-butylphenyl) phosphite, bis (2,4-di-tert-butylphenyl) pentaerythritol diphosphite, and poly (dipropylene glycol) phenyl. Examples thereof include phosphite, diphenylisodecyl phosphite, 2-ethylhexyl diphenyl phosphite, triphenyl phosphite, “Irgafos 168” and “Irgafos 38” manufactured by BASF Corporation.
Examples of the quinone antioxidant include para-benzoquinone and 2-tert-butyl-1,4-benzoquinone.
Examples of amine-based antioxidants include dimethylaniline and phenothiazine.
Among the above-mentioned antioxidants, Irganox 1010, Irganox 1330, 3,3′-thiodipropionate distearyl and Sumilizer TP-D are preferable, Irganox 1010 and Irganox 1330 are more preferable, and Irganox 1010 is particularly preferable.
Further, among the above antioxidants, it is preferable to use a phenol-based antioxidant and a sulfur-based antioxidant or a phosphorus-based antioxidant in combination, and a phenol-based antioxidant and a sulfur-based antioxidant are used in combination. It is particularly preferred. In particular, when a polystyrene-based elastomer is used as the elastomer, it is preferable to use a phenol-based antioxidant and a sulfur-based antioxidant in combination. By using such a combination, it can be expected that the deterioration of the elastomer due to the oxidation reaction can be efficiently suppressed. When a phenolic antioxidant and a sulfurous antioxidant are used in combination, the mass ratio of the phenolic antioxidant to the sulfurous antioxidant is: phenolic antioxidant: sulfurous antioxidant = 95: 5 to 5:95 is preferable, and 25:75 to 75:25 is more preferable.
As the combination of antioxidants, Irganox 1010 and Sumilizer TP-D, Irganox 1330 and Sumilizer TP-D, and Sumilizer GA-80 and Sumilizer TP-D are preferable, Irganox 1010 and Sumilizer TP-D, 13g More preferred are Irganox 1010 and Sumilizer TP-D.
 酸化防止剤の分子量は、加熱中の昇華防止の観点から、400以上が好ましく、600以上がさらに好ましく、750以上が特に好ましい。 The molecular weight of the antioxidant is preferably 400 or more, more preferably 600 or more, and particularly preferably 750 or more, from the viewpoint of preventing sublimation during heating.
 仮止め接着剤が酸化防止剤を有する場合、酸化防止剤の含有量は、仮止め接着剤の全固形分に対して、0.001~20.0質量%が好ましく、0.005~10.0質量%がより好ましい。
 酸化防止剤は1種のみでもよいし、2種以上であってもよい。酸化防止剤が2種以上の場合は、その合計が上記範囲であることが好ましい。
In the case where the temporary adhesive has an antioxidant, the content of the antioxidant is preferably 0.001 to 20.0% by mass with respect to the total solid content of the temporary adhesive, and 0.005 to 10. 0 mass% is more preferable.
Only one type of antioxidant may be used, or two or more types may be used. When there are two or more antioxidants, the total is preferably in the above range.
<<溶剤>>
 本発明の仮止め接着剤は、溶剤を含有することが好ましい。特に、本発明の仮止め接着剤を塗布することにより接着層を形成する場合においては、溶剤を配合することが好ましい。溶剤は、公知のものを制限なく使用でき、有機溶剤が好ましい。
 有機溶剤としては、酢酸エチル、酢酸-n-ブチル、酢酸イソブチル、ギ酸アミル、酢酸イソアミル、酢酸イソブチル、プロピオン酸ブチル、酪酸イソプロピル、酪酸エチル、酪酸ブチル、乳酸メチル、乳酸エチル、オキシ酢酸アルキル(例:オキシ酢酸メチル、オキシ酢酸エチル、オキシ酢酸ブチル(例えば、メトキシ酢酸メチル、メトキシ酢酸エチル、メトキシ酢酸ブチル、エトキシ酢酸メチル、エトキシ酢酸エチル等))、3-オキシプロピオン酸アルキルエステル類(例:3-オキシプロピオン酸メチル、3-オキシプロピオン酸エチル等(例えば、3-メトキシプロピオン酸メチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル等))、2-オキシプロピオン酸アルキルエステル類(例:2-オキシプロピオン酸メチル、2-オキシプロピオン酸エチル、2-オキシプロピオン酸プロピル等(例えば、2-メトキシプロピオン酸メチル、2-メトキシプロピオン酸エチル、2-メトキシプロピオン酸プロピル、2-エトキシプロピオン酸メチル、2-エトキシプロピオン酸エチル))、2-オキシ-2-メチルプロピオン酸メチルおよび2-オキシ-2-メチルプロピオン酸エチル(例えば、2-メトキシ-2-メチルプロピオン酸メチル、2-エトキシ-2-メチルプロピオン酸エチル等)、ピルビン酸メチル、ピルビン酸エチル、ピルビン酸プロピル、アセト酢酸メチル、アセト酢酸エチル、2-オキソブタン酸メチル、2-オキソブタン酸エチル、1-メトキシ-2-プロピルアセテート等のエステル類;
 ジエチレングリコールジメチルエーテル、テトラヒドロフラン、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、メチルセロソルブアセテート、エチルセロソルブアセテート、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート等のエーテル類;
メチルエチルケトン、シクロヘキサノン、2-ヘプタノン、3-ヘプタノン、N-メチル-2-ピロリドン、γ-ブチロラクトン等のケトン類;
トルエン、キシレン、アニソール、メシチレン、エチルベンゼン、プロピルベンゼン、クメン、n-ブチルベンゼン、sec-ブチルベンゼン、イソブチルベンゼン、tert-ブチルベンゼン、アミルベンゼン、イソアミルベンゼン、(2,2-ジメチルプロピル)ベンゼン、1-フェニルへキサン、1-フェニルヘプタン、1-フェニルオクタン、1-フェニルノナン、1-フェニルデカン、シクロプロピルベンゼン、シクロヘキシルベンゼン、2-エチルトルエン、1,2-ジエチルベンゼン、o-シメン、インダン、1,2,3,4-テトラヒドロナフタレン、3-エチルトルエン、m-シメン、1,3-ジイソプロピルベンゼン、4-エチルトルエン、1,4-ジエチルベンゼン、p-シメン、1,4-ジイソプロピルベンゼン、4-tert-ブチルトルエン、1,4-ジ-tert-ブチルベンゼン、1,3-ジエチルベンゼン、1,2,3-トリメチルベンゼン、1,2,4-トリメチルベンゼン、4-tert-ブチル-o-キシレン、1,2,4-トリエチルベンゼン、1,3,5-トリエチルベンゼン、1,3,5-トリイソプロピルベンゼン、5-tert-ブチル-m-キシレン、3,5-ジ-tert-ブチルトルエン、1,2,3,5-テトラメチルベンゼン、1,2,4,5-テトラメチルベンゼン、ペンタメチルベンゼン等の芳香族炭化水素類;
リモネン、p-メンタン、ノナン、デカン、ドデカン、デカリン等の炭化水素類などが好適に挙げられる。
 これらの中でも、メシチレン、tert-ブチルベンゼン、1,2,4-トリメチルベンゼン、p-メンタン、γ-ブチロラクトン、アニソール、3-エトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル、エチルセロソルブアセテート、乳酸エチル、ジエチレングリコールジメチルエーテル、酢酸ブチル、3-メトキシプロピオン酸メチル、2-ヘプタノン、シクロヘキサノン、エチルカルビトールアセテート、ブチルカルビトールアセテート、プロピレングリコールメチルエーテル、およびプロピレングリコールメチルエーテルアセテートが好ましく、メシチレンがより好ましい。
<< Solvent >>
The temporary fixing adhesive of the present invention preferably contains a solvent. In particular, when the adhesive layer is formed by applying the temporary adhesive of the present invention, it is preferable to add a solvent. Any known solvent can be used without limitation, and an organic solvent is preferred.
Examples of organic solvents include ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, alkyl oxyacetate (examples) : Methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate)), 3-oxypropionic acid alkyl esters (example: 3 -Methyl oxypropionate, ethyl 3-oxypropionate, etc. (eg, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate)), 2-oxy Alkyl propionate Stealth (eg, methyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc. (eg, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, Methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-oxy-2-methylpropionate and ethyl 2-oxy-2-methylpropionate (eg methyl 2-methoxy-2-methylpropionate) Ethyl 2-ethoxy-2-methylpropionate), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, 1-methoxy- Esters such as 2-propyl acetate
Diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol Ethers such as monoethyl ether acetate and propylene glycol monopropyl ether acetate;
Ketones such as methyl ethyl ketone, cyclohexanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, γ-butyrolactone;
Toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene, n-butylbenzene, sec-butylbenzene, isobutylbenzene, tert-butylbenzene, amylbenzene, isoamylbenzene, (2,2-dimethylpropyl) benzene, 1 -Phenylhexane, 1-phenylheptane, 1-phenyloctane, 1-phenylnonane, 1-phenyldecane, cyclopropylbenzene, cyclohexylbenzene, 2-ethyltoluene, 1,2-diethylbenzene, o-cymene, indane, 1 , 2,3,4-tetrahydronaphthalene, 3-ethyltoluene, m-cymene, 1,3-diisopropylbenzene, 4-ethyltoluene, 1,4-diethylbenzene, p-cymene, 1,4-diisopropylbenzene, -Tert-butyltoluene, 1,4-di-tert-butylbenzene, 1,3-diethylbenzene, 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 4-tert-butyl-o-xylene 1,2,4-triethylbenzene, 1,3,5-triethylbenzene, 1,3,5-triisopropylbenzene, 5-tert-butyl-m-xylene, 3,5-di-tert-butyltoluene, Aromatic hydrocarbons such as 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, pentamethylbenzene;
Preferable examples include hydrocarbons such as limonene, p-menthane, nonane, decane, dodecane and decalin.
Among these, mesitylene, tert-butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, anisole, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate Diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate are preferred, and mesitylene is more preferred.
 これらの溶剤は、塗布面性状の改良などの観点から、2種以上を混合する形態も好ましい。この場合、特に好ましくは、メシチレン、tert-ブチルベンゼン、1,2,4-トリメチルベンゼン、p-メンタン、γ-ブチロラクトン、アニソール、3-エトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル、エチルセロソルブアセテート、乳酸エチル、ジエチレングリコールジメチルエーテル、酢酸ブチル、3-メトキシプロピオン酸メチル、2-ヘプタノン、シクロヘキサノン、エチルカルビトールアセテート、ブチルカルビトールアセテート、プロピレングリコールメチルエーテル、およびプロピレングリコールメチルエーテルアセテートから選択される2種以上で構成される混合溶液である。 These solvents are preferably mixed in two or more types from the viewpoint of improving the properties of the coated surface. In this case, particularly preferably, mesitylene, tert-butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, anisole, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate , Ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate It is a mixed solution comprised by the above.
 仮止め接着剤が溶剤を含有する場合、仮止め接着剤の溶剤の含有量は、塗布性の観点から、仮止め接着剤の全固形分濃度が5~80質量%になる量が好ましく、10~50質量%がさらに好ましく、15~40質量%が特に好ましい。
 溶剤は1種のみでもよいし、2種以上であってもよい。溶剤が2種以上の場合は、その合計が上記範囲であることが好ましい。
 また、後述するとおり、本発明の仮止め接着剤を接着フィルムや接着性支持体の接着層に用いる場合は、溶剤含有率が1質量%以下であることが好ましく、0.1質量%以下がより好ましく、含有しないことが特に好ましい。
When the temporary fixing adhesive contains a solvent, the content of the temporary fixing adhesive is preferably such that the total solid concentration of the temporary fixing adhesive is 5 to 80% by mass from the viewpoint of applicability. Is more preferably from 50 to 50% by weight, particularly preferably from 15 to 40% by weight.
One type of solvent may be sufficient and 2 or more types may be sufficient as it. When there are two or more solvents, the total is preferably in the above range.
As will be described later, when the temporary adhesive of the present invention is used for an adhesive film or an adhesive layer of an adhesive support, the solvent content is preferably 1% by mass or less, and 0.1% by mass or less. More preferably, it is particularly preferable not to contain.
<<ラジカル重合性化合物>>
 本発明の仮止め接着剤は、ラジカル重合性化合物を含むことも好ましい。ラジカル重合性化合物を含む仮止め接着剤を用いることで、加熱時における接着層の流動変形を抑制しやすい。このため、例えば、基材を研磨した後の積層体を加熱処理する場合などにおいて、加熱時における接着層の流動変形を抑制でき、反りの発生を効果的に抑制できる。また、硬度のある接着層を形成できるので、基材の研磨時に圧力が局所的に加わっても、接着層が変形しにくく、平坦研磨性が優れる。
<< Radically polymerizable compound >>
The temporary fixing adhesive of the present invention preferably contains a radically polymerizable compound. By using a temporary fixing adhesive containing a radical polymerizable compound, it is easy to suppress fluid deformation of the adhesive layer during heating. For this reason, for example, in the case of heat-treating the laminate after polishing the base material, the flow deformation of the adhesive layer during heating can be suppressed, and the occurrence of warpage can be effectively suppressed. Moreover, since the adhesive layer with hardness can be formed, even if a pressure is locally applied at the time of grinding | polishing of a base material, an adhesive layer cannot change easily and flat polishing property is excellent.
 本発明において、ラジカル重合性化合物は、ラジカル重合性基を有する化合物であって、ラジカルにより重合可能な公知のラジカル重合性化合物を用いることができる。このような化合物は当分野において広く知られているものであり、本発明においてはこれらを特に限定なく用いることができる。これらは、例えば、モノマー、プレポリマー、オリゴマー又はそれらの混合物並びにそれらの多量体などの化学的形態のいずれであってもよい。ラジカル重合性化合物としては、特開2015-087611号公報の段落0099~080の記載を参酌でき、これらの内容は本明細書に組み込まれる。 In the present invention, the radical polymerizable compound is a compound having a radical polymerizable group, and a known radical polymerizable compound that can be polymerized by a radical can be used. Such compounds are widely known in the art, and can be used without particular limitation in the present invention. These may be any of chemical forms such as monomers, prepolymers, oligomers or mixtures thereof and multimers thereof. As the radically polymerizable compound, the description in paragraphs 00099 to 080 of JP-A-2015-087611 can be referred to, and the contents thereof are incorporated in the present specification.
 また、ラジカル重合性化合物としては、特公昭48-41708号、特開昭51-37193号公報、特公平2-32293号公報、特公平2-16765号公報に記載されているようなウレタンアクリレート類や、特公昭58-49860号公報、特公昭56-17654号公報、特公昭62-39417号公報、特公昭62-39418号公報記載のエチレンオキサイド系骨格を有するウレタン化合物類も好適である。さらに、ラジカル重合性化合物として、特開昭63-277653号公報、特開昭63-260909号公報、特開平1-105238号公報に記載される、分子内にアミノ構造やスルフィド構造を有する付加重合性モノマー類を用いることもできる。 Examples of the radical polymerizable compound include urethane acrylates as described in JP-B-48-41708, JP-A-51-37193, JP-B-2-32293, and JP-B-2-16765. Also suitable are urethane compounds having an ethylene oxide skeleton as described in JP-B-58-49860, JP-B-56-17654, JP-B-62-39417, and JP-B-62-39418. Further, as radically polymerizable compounds, addition polymerization having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238 is described. Monomers can also be used.
 ラジカル重合性化合物の市販品としては、ウレタンオリゴマーUAS-10、UAB-140(山陽国策パルプ社製)、NKエステルM-40G、NKエステル4G、NKエステルA-9300、NKエステルM-9300、NKエステルA-TMMT、NKエステルA-DPH、NKエステルA-BPE-4、UA-7200(新中村化学社製)、DPHA-40H(日本化薬社製)、UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共栄社化学(株)製)、ブレンマーPME400(日油(株)製)などが挙げられる。 Commercially available radical polymerizable compounds include urethane oligomers UAS-10, UAB-140 (manufactured by Sanyo Kokusaku Pulp Co., Ltd.), NK ester M-40G, NK ester 4G, NK ester A-9300, NK ester M-9300, NK Ester A-TMMT, NK ester A-DPH, NK ester A-BPE-4, UA-7200 (manufactured by Shin-Nakamura Chemical), DPHA-40H (manufactured by Nippon Kayaku), UA-306H, UA-306T, UA -306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), Blemmer PME400 (manufactured by NOF Corporation), and the like.
 本発明において、ラジカル重合性化合物は、耐熱性の観点から、下記(P-1)~(P-4)で表される部分構造の少なくとも一種を有することが好ましく、下記(P-3)で表される部分構造を有することが更に好ましい。式中の*は連結手である。 In the present invention, the radically polymerizable compound preferably has at least one of the partial structures represented by the following (P-1) to (P-4) from the viewpoint of heat resistance. More preferably, it has a partial structure represented. * In the formula is a connecting hand.
Figure JPOXMLDOC01-appb-C000002
Figure JPOXMLDOC01-appb-C000002
 上記部分構造を有するラジカル重合性化合物の具体例としては、例えば、トリメチロールプロパントリ(メタ)アクリレート、イソシアヌル酸エチレンオキサイド変性ジ(メタ)アクリレート、イソシアヌル酸エチレンオキサイド変性トリ(メタ)アクリレート、イソシアヌル酸トリアリル、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジメチロールプロパンテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、テトラメチロールメタンテトラ(メタ)アクリレートなどが挙げられ、本発明においてはこれらのラジカル重合性化合物を特に好ましく用いることができる。 Specific examples of the radical polymerizable compound having the above partial structure include, for example, trimethylolpropane tri (meth) acrylate, isocyanuric acid ethylene oxide-modified di (meth) acrylate, isocyanuric acid ethylene oxide-modified tri (meth) acrylate, and isocyanuric acid. Triallyl, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dimethylolpropane tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tetramethylolmethanetetra ( (Meth) acrylates and the like, and in the present invention, these radically polymerizable compounds can be particularly preferably used.
 本発明の仮止め接着剤において、ラジカル重合性化合物を添加する場合の含有量は、良好な接着性、平坦研磨性、剥離性、反り抑制の観点から、溶剤を除いた仮止め接着剤の質量に対して、1~50質量%が好ましく、1~30質量%がより好ましく、5~30質量%がさらに好ましい。ラジカル重合性化合物は1種を単独で用いてもよいが、2種以上を混合して用いてもよい。
 また、本発明の仮止め接着剤において、ラジカル重合性化合物を添加する場合のエラストマーとラジカル重合性化合物との質量割合は、エラストマー:ラジカル重合性化合物=98:2~10:90が好ましく、95:5~30:70がより好ましく、90:10~50:50が特に好ましい。エラストマーとラジカル重合性化合物との質量割合が上記範囲であれば、接着性、平坦研磨性、剥離性および反り抑制に優れた接着層を形成できる。
In the temporary fixing adhesive of the present invention, the content in the case of adding a radical polymerizable compound is the mass of the temporary fixing adhesive excluding the solvent from the viewpoint of good adhesiveness, flat polishing property, peelability, and warpage suppression. The content is preferably 1 to 50% by mass, more preferably 1 to 30% by mass, and still more preferably 5 to 30% by mass. A radically polymerizable compound may be used alone or in combination of two or more.
In the temporary fixing adhesive of the present invention, the mass ratio of the elastomer and the radical polymerizable compound when the radical polymerizable compound is added is preferably elastomer: radical polymerizable compound = 98: 2 to 10:90, 95 : 5 to 30:70 is more preferable, and 90:10 to 50:50 is particularly preferable. When the mass ratio of the elastomer and the radical polymerizable compound is in the above range, an adhesive layer excellent in adhesiveness, flat polishing property, peelability and warpage suppression can be formed.
<<高分子化合物>>
 本発明の仮止め接着剤は、塗布性、接着性、離型性や耐熱性等を調節するために、必要に応じて上述したケイ素系液体状化合物およびエラストマー以外の高分子化合物を有していてもよい。なお、ここでいう塗布性とは、塗布後の膜厚の均一性や塗布後の膜形成性のことをいう。
 本発明においては、高分子化合物は任意のものを使用できる。高分子化合物は、重合性基を含まない化合物である。高分子化合物の重量平均分子量は、10,000~1,000,000が好ましく、50,000~500,000がより好ましく、100,000~300,000が更に好ましい。
 高分子化合物の具体例としては、例えば、炭化水素樹脂、ノボラック樹脂、フェノール樹脂、エポキシ樹脂、メラミン樹脂、ユリア樹脂、不飽和ポリエステル樹脂、アルキド樹脂、ポリイミド樹脂、ポリ塩化ビニル樹脂、ポリ酢酸ビニル樹脂、テフロン(登録商標)、ポリアミド樹脂、ポリアセタール樹脂、ポリカーボネート樹脂、ポリフェニレンエーテル樹脂、ポリブチレンテレフタレート樹脂、ポリエチレンテレフタレート樹脂、ポリフェニレンスルフィド樹脂、ポリスルホン樹脂、ポリエーテルスルホン樹脂、ポリアリレート樹脂、ポリエーテルエーテルケトン樹脂、ポリアミドイミド樹脂などが挙げられる。中でも、炭化水素樹脂、ノボラック樹脂、ポリイミド樹脂が好ましく、炭化水素樹脂がより好ましい。高分子化合物は必要に応じて2種以上を組み合わせて使用しても良い。
<< polymer compound >>
The temporary tacking adhesive of the present invention has a polymer compound other than the above-described silicon-based liquid compound and elastomer as necessary in order to adjust applicability, adhesiveness, releasability, heat resistance, and the like. May be. Here, the coating property means the uniformity of the film thickness after coating and the film forming property after coating.
In the present invention, any polymer compound can be used. The polymer compound is a compound that does not contain a polymerizable group. The weight average molecular weight of the polymer compound is preferably 10,000 to 1,000,000, more preferably 50,000 to 500,000, and still more preferably 100,000 to 300,000.
Specific examples of the polymer compound include, for example, hydrocarbon resins, novolac resins, phenol resins, epoxy resins, melamine resins, urea resins, unsaturated polyester resins, alkyd resins, polyimide resins, polyvinyl chloride resins, and polyvinyl acetate resins. , Teflon (registered trademark), polyamide resin, polyacetal resin, polycarbonate resin, polyphenylene ether resin, polybutylene terephthalate resin, polyethylene terephthalate resin, polyphenylene sulfide resin, polysulfone resin, polyethersulfone resin, polyarylate resin, polyetheretherketone resin And polyamideimide resin. Among these, hydrocarbon resins, novolak resins, and polyimide resins are preferable, and hydrocarbon resins are more preferable. You may use a high molecular compound in combination of 2 or more type as needed.
 炭化水素樹脂として任意のものを使用できる。
 炭化水素樹脂は、基本的には炭素原子と水素原子のみからなる樹脂を意味するが、基本となる骨格が炭化水素樹脂であれば、側鎖としてその他の原子を含んでいても良い。すなわち、炭素原子と水素原子のみからなる炭化水素樹脂に加えて、アクリル樹脂、ポリビニルアルコール樹脂、ポリビニルアセタール樹脂、ポリビニルピロリドン樹脂のように、主鎖に炭化水素基以外の官能基が直接結合する場合も本発明における炭化水素樹脂に包含されるものであり、この場合、主鎖に炭化水素基が直接結合されてなる繰り返し単位の含有量が、樹脂の全繰り返し単位に対して30モル%以上であることが好ましい。
 上記条件に合致する炭化水素樹脂としては例えば、テルペン樹脂、テルペンフェノール樹脂、変性テルペン樹脂、水添テルペン樹脂、水添テルペンフェノール樹脂、ロジン、ロジンエステル、水添ロジン、水添ロジンエステル、重合ロジン、重合ロジンエステル、変性ロジン、ロジン変性フェノール樹脂、アルキルフェノール樹脂、脂肪族石油樹脂、芳香族石油樹脂、水添石油樹脂、変性石油樹脂、脂環族石油樹脂、クマロン石油樹脂、インデン石油樹脂などが挙げられる。
 炭化水素樹脂は、中でも、テルペン樹脂、ロジン、石油樹脂、水素化ロジン、重合ロジンであることが好ましく、テルペン樹脂、ロジンであることがより好ましい。
Any hydrocarbon resin can be used.
The hydrocarbon resin basically means a resin consisting of only carbon atoms and hydrogen atoms, but if the basic skeleton is a hydrocarbon resin, it may contain other atoms as side chains. That is, when a functional group other than a hydrocarbon group is directly bonded to the main chain, such as an acrylic resin, a polyvinyl alcohol resin, a polyvinyl acetal resin, or a polyvinyl pyrrolidone resin, in addition to a hydrocarbon resin consisting of only carbon atoms and hydrogen atoms. Are also included in the hydrocarbon resin in the present invention. In this case, the content of the repeating unit in which the hydrocarbon group is directly bonded to the main chain is 30 mol% or more based on the entire repeating unit of the resin. Preferably there is.
Examples of the hydrocarbon resin meeting the above conditions include terpene resin, terpene phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, and polymerized rosin. Polymerized rosin ester, modified rosin, rosin modified phenolic resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone petroleum resin, indene petroleum resin, etc. Can be mentioned.
The hydrocarbon resin is preferably a terpene resin, rosin, petroleum resin, hydrogenated rosin, or polymerized rosin, and more preferably a terpene resin or rosin.
 塗布性、離型性および耐熱性を改良する観点で、フッ素原子を有する非三次元架橋構造の高分子化合物を含有することが好ましい。非三次元架橋構造とは、化合物中に架橋構造を含まないか、化合物中の全架橋構造に対する三次元架橋構造を形成している架橋構造の割合が、5%以下であることをいい、1%以下が好ましい。 フッ素原子を有する非三次元架橋構造の高分子化合物としては、1種または2種以上の含フッ素単官能モノマーからなる重合体を好ましく使用できる。より具体的には、テトラフルオロエチレン、ヘキサフルオロプロペン、テトラフルオロエチレンオキシド、ヘキサフルオロプロペンオキシド、パーフルオロアルキルビニルエーテル、クロロトリフルオロエチレン、ビニリデンフルオライド、パーフルオロアルキル基含有(メタ)アクリル酸エステルから選ばれる1種又は2種以上の含フッ素単官能モノマーの単独重合体又はこれらモノマーの共重合体、含フッ素単官能モノマーの1種又は2種以上とエチレンとの共重合体、含フッ素単官能モノマーの1種又は2種以上とクロロトリフルオロエチレンとの共重合体から選ばれる少なくとも1種の含フッ素樹脂等を挙げることができる。 From the viewpoint of improving coatability, releasability and heat resistance, it is preferable to contain a polymer compound having a non-three-dimensional crosslinked structure having fluorine atoms. The non-three-dimensional crosslinked structure means that the compound does not contain a crosslinked structure or the ratio of the crosslinked structure forming the three-dimensional crosslinked structure to the total crosslinked structure in the compound is 5% or less. % Or less is preferable. As the polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom, a polymer composed of one or more fluorine-containing monofunctional monomers can be preferably used. More specifically, it is selected from tetrafluoroethylene, hexafluoropropene, tetrafluoroethylene oxide, hexafluoropropene oxide, perfluoroalkyl vinyl ether, chlorotrifluoroethylene, vinylidene fluoride, and perfluoroalkyl group-containing (meth) acrylic acid ester. Homopolymers of one or more fluorine-containing monofunctional monomers or copolymers of these monomers, copolymers of one or more fluorine-containing monofunctional monomers with ethylene, fluorine-containing monofunctional monomers And at least one fluorine-containing resin selected from a copolymer of one or more of these and chlorotrifluoroethylene.
 フッ素原子を有する非三次元架橋構造の高分子化合物としては、パーフルオロアルキル基含有(メタ)アクリル酸エステルから合成できるパーフルオロアルキル基含有の(メタ)アクリル樹脂であることが好ましい。
 パーフルオロアルキル基含有(メタ)アクリル酸エステルとしては、具体的には下記式(101)で表される化合物であることが好ましい。
The polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom is preferably a perfluoroalkyl group-containing (meth) acrylic resin that can be synthesized from a perfluoroalkyl group-containing (meth) acrylic acid ester.
Specifically, the perfluoroalkyl group-containing (meth) acrylic acid ester is preferably a compound represented by the following formula (101).
 式(101)
Figure JPOXMLDOC01-appb-C000003
Formula (101)
Figure JPOXMLDOC01-appb-C000003
 一般式(101)中、R101、R102、R103はそれぞれ独立に、水素原子、アルキル基、又はハロゲン原子を表す。Y101は、単結合、または、-CO-、-O-、-NH-、2価の脂肪族基、2価の芳香族基およびそれらの組み合わせからなる群より選ばれる2価の連結基を表す。Rfはフッ素原子またはフッ素原子を少なくとも一つ有する一価の有機基である。 In General Formula (101), R 101 , R 102 , and R 103 each independently represent a hydrogen atom, an alkyl group, or a halogen atom. Y 101 represents a single bond or a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof. To express. Rf is a fluorine atom or a monovalent organic group having at least one fluorine atom.
 一般式(101)中、R101、R102、R103で表されるアルキル基の例は、炭素数1~8のアルキル基であることが好ましく、例えば、メチル基、エチル基、プロピル基、オクチル基、イソプロピル基、tert-ブチル基、イソペンチル基、2-エチルヘキシル基、2-メチルヘキシル基、シクロペンチル基等が挙げられる。アリール基の例は、炭素数6~12のアリール基であることが好ましく、フェニル基、1-ナフチル基、2-ナフチル基などが挙げられる。R101~R103としては、なかでも、水素原子またはメチル基が好ましい。 In the general formula (101), examples of the alkyl group represented by R 101 , R 102 , R 103 are preferably alkyl groups having 1 to 8 carbon atoms, such as a methyl group, an ethyl group, a propyl group, Examples include octyl group, isopropyl group, tert-butyl group, isopentyl group, 2-ethylhexyl group, 2-methylhexyl group, cyclopentyl group and the like. Examples of the aryl group are preferably aryl groups having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. R 101 to R 103 are preferably a hydrogen atom or a methyl group.
 Y101は、単結合、または、-CO-、-O-、-NH-、2価の脂肪族基、2価の芳香族基およびそれらの組み合わせからなる群より選ばれる2価の連結基を表し、2価の脂肪族基は、環状構造よりも鎖状構造の方が好ましく、さらに分岐を有する鎖状構造よりも直鎖状構造の方が好ましい。2価の脂肪族基の炭素原子数は、1~20であることが好ましく、1~15であることがより好ましく、1~12であることがさらに好ましく、1~10であることが一層好ましく、1~8であることがより一層好ましく、1~4であることが特に好ましい。
 2価の芳香族基の例としては、フェニレン基、置換フェニレン基、ナフタレン基および置換ナフタレン基が挙げられ、フェニレン基が好ましい。
101としては、2価の直鎖状構造の脂肪族基であることが好ましい。
Y 101 represents a single bond or a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof. The divalent aliphatic group is preferably a chain structure rather than a cyclic structure, and more preferably a straight chain structure than a branched chain structure. The number of carbon atoms in the divalent aliphatic group is preferably 1-20, more preferably 1-15, still more preferably 1-12, and even more preferably 1-10. 1 to 8 is even more preferable, and 1 to 4 is particularly preferable.
Examples of the divalent aromatic group include a phenylene group, a substituted phenylene group, a naphthalene group, and a substituted naphthalene group, and a phenylene group is preferable.
Y 101 is preferably an aliphatic group having a divalent linear structure.
 Rfで表される、フッ素原子を有する一価の有機基としては、特に限定はないが、炭素数1~30の含フッ素アルキル基が好ましく、炭素数1~20がより好ましく、炭素数1~15の含フッ素アルキル基が特に好ましい。この含フッ素アルキル基は、直鎖{例えば-CF2CF3、-CH2(CF24H、-CH2(CF28CF3、-CH2CH2(CF24H等}であっても、分岐構造{例えば-CH(CF32、-CH2CF(CF32、-CH(CH3)CF2CF3、-CH(CH3)(CF25CF2H等}を有していてもよく、また脂環式構造(好ましくは5員環又は6員環、例えばペルフルオロシクロへキシル基、ペルフルオロシクロペンチル基又はこれらで置換されたアルキル基等)を有していてもよく、エーテル結合(例えば-CH2OCH2CF2CF3、-CH2CH2OCH248H、-CH2CH2OCH2CH2817、-CH2CF2OCF2CF2OCF2CF2H等)を有していてもよい。また、ペルフルオロアルキル基であってもよい。 The monovalent organic group having a fluorine atom represented by Rf is not particularly limited, but is preferably a fluorinated alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and more preferably 1 to Fifteen fluorine-containing alkyl groups are particularly preferred. This fluorine-containing alkyl group is a straight chain {for example, —CF 2 CF 3 , —CH 2 (CF 2 ) 4 H, —CH 2 (CF 2 ) 8 CF 3 , —CH 2 CH 2 (CF 2 ) 4 H, etc. }, A branched structure {eg, —CH (CF 3 ) 2 , —CH 2 CF (CF 3 ) 2 , —CH (CH 3 ) CF 2 CF 3 , —CH (CH 3 ) (CF 2 ) 5 CF 2 H and the like} and an alicyclic structure (preferably a 5-membered or 6-membered ring such as a perfluorocyclohexyl group, a perfluorocyclopentyl group, or an alkyl group substituted with these). An ether bond (for example, —CH 2 OCH 2 CF 2 CF 3 , —CH 2 CH 2 OCH 2 C 4 F 8 H, —CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , —CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H , etc.) may have. Further, it may be a perfluoroalkyl group.
 パーフルオロアルキル基含有(メタ)アクリル樹脂としては、具体的には下記式(102)で表される繰り返し単位を有する。
 式(102)
Figure JPOXMLDOC01-appb-C000004
Specifically, the perfluoroalkyl group-containing (meth) acrylic resin has a repeating unit represented by the following formula (102).
Formula (102)
Figure JPOXMLDOC01-appb-C000004
 一般式(102)中、R101、R102、R103、Y101、Rfはそれぞれ、一般式(101)におけるものと同義であり、好ましい態様も同じである。 In general formula (102), R 101 , R 102 , R 103 , Y 101 , and Rf have the same meanings as those in general formula (101), and preferred embodiments are also the same.
 パーフルオロアルキル基含有(メタ)アクリル樹脂は、剥離性の観点から任意にパーフルオロアルキル基含有(メタ)アクリル酸エステルに加えて、共重合成分を選択することができる。共重合成分を形成し得るラジカル重合性化合物としては、例えば、アクリル酸エステル類、メタクリル酸エステル類、N,N-2置換アクリルアミド類、N,N-2置換メタクリルアミド類、スチレン類、アクリロニトリル類、メタクリロニトリル類などから選ばれるラジカル重合性化合物が挙げられる。 In the perfluoroalkyl group-containing (meth) acrylic resin, a copolymer component can be selected in addition to the perfluoroalkyl group-containing (meth) acrylic acid ester from the viewpoint of peelability. Examples of the radical polymerizable compound capable of forming a copolymer component include acrylic acid esters, methacrylic acid esters, N, N-2 substituted acrylamides, N, N-2 substituted methacrylamides, styrenes, and acrylonitriles. And radical polymerizable compounds selected from methacrylonitriles and the like.
 より具体的には、例えば、アルキルアクリレート(アルキル基の炭素原子数は1~20のものが好ましい)等のアクリル酸エステル類(例えば、アクリル酸メチル、アクリル酸エチル、アクリル酸プロピル、アクリル酸ブチル、アクリル酸アミル、アクリル酸エチルヘキシル、アクリル酸オクチル、アクリル酸-t-オクチル、クロルエチルアクリレート、2,2-ジメチルヒドロキシプロピルアクリレート、5-ヒドロキシペンチルアクリレート、トリメチロールプロパンモノアクリレート、ペンタエリスリトールモノアクリレート、グリシジルアクリレート、ベンジルアクリレート、メトキシベンジルアクリレート、フルフリルアクリレート、テトラヒドロフルフリルアクリレートなど)、アリールアクリレート(例えば、フェニルアクリレートなど)、アルキルメタクリレート(アルキル基の炭素原子は1~20のものが好ましい)等のメタクリル酸エステル類(例えば、メチルメタクリレート、エチルメタクリレート、プロピルメタクリレート、イソプロピルメタクリレート、アミルメタクリレート、ヘキシルメタクリレート、シクロヘキシルメタクリレート、ベンジルメタクリレート、クロルベンジルメタクリレート、オクチルメタクリレート、4-ヒドロキシブチルメタクリレート、5-ヒドロキシペンチルメタクリレート、2,2-ジメチル-3-ヒドロキシプロピルメタクリレート、トリメチロールプロパンモノメタクリレート、ペンタエリスリトールモノメタクリレート、グリシジルメタクリレート、フルフリルメタクリレート、テトラヒドロフルフリルメタクリレートなど)、アリールメタクリレート(例えば、フェニルメタクリレート、クレジルメタクリレート、ナフチルメタクリレートなど)、スチレン、アルキルスチレン等のスチレン(例えば、メチルスチレン、ジメチルスチレン、トリメチルスチレン、エチルスチレン、ジエチルスチレン、イソプロピルスチレン、ブチルスチレン、ヘキシルスチレン、シクロヘキシルスチレン、デシルスチレン、ベンジルスチレン、クロルメチルスチレン、トリフルオロメチルスチレン、エトキシメチルスチレン、アセトキシメチルスチレンなど)、アルコキシスチレン(例えば、メトキシスチレン、4-メトキシ-3-メチルスチレン、ジメトキシスチレンなど)、ハロゲンスチレン(例えば、クロルスチレン、ジクロルスチレン、トリクロルスチレン、テトラクロルスチレン、ペンタクロルスチレン、ブロムスチレン、ジブロムスチレン、ヨードスチレン、フルオロスチレン、トリフルオロスチレン、2-ブロム-4-トリフルオロメチルスチレン、4-フルオロ-3-トリフルオロメチルスチレンなど)、アクリロニトリル、メタクリロニトリルアクリル酸、カルボン酸を含有するラジカル重合性化合物(アクリル酸、メタクリル酸、イタコン酸、クロトン酸、イソクロトン酸、マレイン酸、パラ-カルボキシルスチレン、及びこれらの酸基の金属塩、アンモニウム塩化合物等)が挙げられるが、剥離性の観点から特に、炭素数1~24の炭化水素基を有する(メタ)アクリル酸エステルが好ましく、例えば(メタ)アクリル酸のメチル、ブチル、2-エチルヘキシル、ラウリル、ステアリル、グリシジルエステル等が挙げられ、2-エチルヘキシル、ラウリル、ステアリル等の高級アルコールの(メタ)アクリレート、特にアクリレートが好ましい。 More specifically, for example, acrylic esters (eg, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate) such as alkyl acrylate (the alkyl group preferably has 1 to 20 carbon atoms). Amyl acrylate, ethyl hexyl acrylate, octyl acrylate, tert-octyl acrylate, chloroethyl acrylate, 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylolpropane monoacrylate, pentaerythritol monoacrylate, Glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate, etc.), aryl acrylates (eg phenyl Methacrylic acid esters (eg, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate). , Benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, glycidyl methacrylate, full Furyl methacrylate, tetrahydrofurfuryl meta Relates, etc.), aryl methacrylates (eg, phenyl methacrylate, cresyl methacrylate, naphthyl methacrylate, etc.), styrenes such as styrene, alkyl styrene (eg, methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, isopropyl styrene, butyl) Styrene, hexyl styrene, cyclohexyl styrene, decyl styrene, benzyl styrene, chloromethyl styrene, trifluoromethyl styrene, ethoxymethyl styrene, acetoxymethyl styrene, etc.), alkoxy styrene (for example, methoxy styrene, 4-methoxy-3-methyl styrene, Dimethoxystyrene), halogen styrene (eg, chlorostyrene, dichlorostyrene, trichlorostyrene) Tetrachlorostyrene, pentachlorostyrene, bromostyrene, dibromostyrene, iodostyrene, fluorostyrene, trifluorostyrene, 2-bromo-4-trifluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc.) Radical polymerizable compounds containing acrylonitrile, methacrylonitrile acrylic acid, carboxylic acid (acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, para-carboxylstyrene, and metal salts of these acid groups, (Meth) acrylic acid ester having a hydrocarbon group having 1 to 24 carbon atoms is preferable from the viewpoint of releasability, such as methyl (meth) acrylate, butyl, 2- Ethylhexyl, lauryl, steer Le, include such glycidyl ester, 2-ethylhexyl, lauryl, higher alcohol (meth) acrylate stearyl, especially acrylate.
 フッ素原子を有する非三次元架橋構造の高分子化合物は、市販されているものを用いてもよい。例えば、テフロン(登録商標)(デュポン社)、テフゼル(デュポン社)、フルオン(旭硝子社)、ヘイラー(SolvaySolexis社)、ハイラー(SolvaySolexis社)、ルミフロン(旭硝子社)、アフラス(旭硝子社)、サイトップ(旭硝子社)、セフラルソフト(セントラル硝子社)、セフラルコート(セントラル硝子社)、ダイオニン(3M社)等のフッ素樹脂、ヴァイトン(デュポン社)、カルレッツ(デュポン社)、SIFEL(信越化学工業社)等の商標名のフッ素ゴム、クライトックス(デュポン社)、フォンブリン(ダイトクテック社)、デムナム(ダイキン工業社)等のパーフルオロポリエーテルオイルをはじめとする各種のフッ素オイルや、ダイフリーFBシリーズ(ダイキン工業社)、メガファックシリーズ(DIC社)等の商標名のフッ素含有離型剤などが挙げられる。 A commercially available polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom may be used. For example, Teflon (registered trademark) (DuPont), Tefzel (DuPont), Fullon (Asahi Glass), Halar (SolvaySolexis), Heiler (SolvaySolexis), Lumiflon (Asahi Glass), Afras (Asahi Glass), Cytop (Asahi Glass Co., Ltd.), Cefral Soft (Central Glass Co., Ltd.), Cefral Coat (Central Glass Co., Ltd.), Dionine (3M Co.), and other fluororesins, Vuitton (DuPont Co., Ltd.), Kalrez (DuPont Co., Ltd.) Various fluoro oils, including perfluoropolyether oils such as fluoro rubber, Krytox (DuPont), Fomblin (Daitotech), Demnam (Daikin Industries), etc., and Die Free FB series (Daikin) Kogyo Co., Ltd.), MegaFuck series (DIC), etc. Examples thereof include nitrogen-containing release agents.
 フッ素原子を有する非三次元架橋構造の高分子化合物のゲルパーミエーションクロマトグラフィー(GPC)法でのポリスチレン換算の重量平均分子量は、100000~2000であることが好ましく、50000~2000がより好ましく、10000~2000であることが最も好ましい。 The weight average molecular weight in terms of polystyrene in the gel permeation chromatography (GPC) method of the non-three-dimensional crosslinked polymer compound having a fluorine atom is preferably 100,000 to 2,000, more preferably 50,000 to 2,000. Most preferred is ˜2000.
 本発明の仮止め接着剤が、上述したケイ素系液体状化合物およびエラストマー以外の高分子化合物を含有する場合、その含有量は、仮止め接着剤の全固形分に対して、0.01~60質量%であることが好ましく、0.05~50質量%であることがより好ましく、0.1~30質量%であることがさらに好ましい。 When the temporary fixing adhesive of the present invention contains a polymer compound other than the above-described silicon-based liquid compound and elastomer, the content thereof is 0.01 to 60 with respect to the total solid content of the temporary fixing adhesive. The content is preferably mass%, more preferably 0.05 to 50 mass%, and still more preferably 0.1 to 30 mass%.
<<界面活性剤>>
 本発明の仮止め接着剤は、界面活性剤を含有していてもよい。ここでいう界面活性剤には、ケイ素系液体状化合物を含まない。
 界面活性剤としては、アニオン系、カチオン系、ノニオン系、または、両性のいずれでも使用することができるが、好ましい界面活性剤はノニオン系界面活性剤である。
 ノニオン系界面活性剤の好ましい例としては、ポリオキシエチレン高級アルキルエーテル類、ポリオキシエチレン高級アルキルフェニルエーテル類、ポリオキシエチレングリコールの高級脂肪酸ジエステル類、フッ素系界面活性剤を挙げることができる。
 界面活性剤の具体例としては、特開2015-065401号公報の段落0173~0177の記載を参酌でき、これらの内容は本明細書に組み込まれる。
 仮止め接着剤における界面活性剤の含有量は、塗布性の観点から、仮止め接着剤の全固形分に対して0.001~5質量%が好ましく、0.005~1質量%がさらに好ましく、0.01~0.5質量%が特に好ましい。界面活性剤は1種のみでもよいし、2種以上であってもよい。界面活性剤が2種以上の場合は、その合計が上記範囲であることが好ましい。
<< Surfactant >>
The temporary fixing adhesive of the present invention may contain a surfactant. The surfactant here does not contain a silicon-based liquid compound.
As the surfactant, any of anionic, cationic, nonionic, or amphoteric surfactants can be used, but a preferred surfactant is a nonionic surfactant.
Preferable examples of nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, and fluorine surfactants.
As specific examples of the surfactant, the description in paragraphs 0173 to 0177 of JP-A-2015-065401 can be referred to, and the contents thereof are incorporated in the present specification.
The content of the surfactant in the temporary fixing adhesive is preferably 0.001 to 5% by mass, more preferably 0.005 to 1% by mass, based on the total solid content of the temporary fixing adhesive, from the viewpoint of applicability. 0.01 to 0.5% by mass is particularly preferable. Only one surfactant may be used, or two or more surfactants may be used. When there are two or more surfactants, the total is preferably in the above range.
<<フッ素系液体状化合物>>
 塗布性または離型性を改良する観点で、本発明の仮止め接着剤は、フッ素系液体状化合物を含有することも好ましい。
 ここで、液体状化合物とは、25℃で流動性を有する化合物であって、例えば、25℃での粘度が、1~100,000mPa・sである化合物を意味する。
 フッ素系液体状化合物の25℃での粘度は、例えば、10~20,000mPa・sがより好ましく、100~15,000mPa・sが一層好ましい。フッ素系液体状化合物の粘度が上記範囲であれば、接着層の表層にフッ素系液体状化合物が偏在しやすい。
<< Fluorine-based liquid compound >>
From the viewpoint of improving applicability or releasability, the temporary fixing adhesive of the present invention preferably contains a fluorinated liquid compound.
Here, the liquid compound means a compound having fluidity at 25 ° C. and having a viscosity of 1 to 100,000 mPa · s at 25 ° C., for example.
The viscosity of the fluorinated liquid compound at 25 ° C. is more preferably, for example, 10 to 20,000 mPa · s, and further preferably 100 to 15,000 mPa · s. When the viscosity of the fluorinated liquid compound is within the above range, the fluorinated liquid compound tends to be unevenly distributed in the surface layer of the adhesive layer.
 フッ素系液体状化合物は、オリゴマー、ポリマーのいずれの形態の化合物であっても好ましく用いることができる。また、オリゴマーとポリマーとの混合物であってもよい。かかる混合物は、モノマーを更に含んでいてもよい。また、フッ素系液体状化合物は、モノマーであってもよい。
 フッ素系液体状化合物は、耐熱性等の観点から、オリゴマー、ポリマーおよびこれらの混合物が好ましい。
 オリゴマー、ポリマーとしては、例えば、ラジカル重合体、カチオン重合体、アニオン重合体などが挙げられ、何れも好ましく用いることができる。ビニル系重合体が特に好ましい。
 フッ素系液体状化合物の重量平均分子量は、500~100000が好ましく、1000~50000がより好ましく、2000~20000が更に好ましい。
The fluorinated liquid compound can be preferably used in any form of oligomer or polymer. Moreover, the mixture of an oligomer and a polymer may be sufficient. Such a mixture may further comprise a monomer. Further, the fluorinated liquid compound may be a monomer.
The fluorine-based liquid compound is preferably an oligomer, a polymer, or a mixture thereof from the viewpoint of heat resistance and the like.
Examples of the oligomer and polymer include a radical polymer, a cationic polymer, and an anionic polymer, and any of them can be preferably used. A vinyl polymer is particularly preferred.
The weight average molecular weight of the fluorinated liquid compound is preferably 500 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 20,000.
 フッ素系液体状化合物は、仮接着に供する基材の処理時に変性しない化合物が好ましい。例えば、250℃以上での加熱や、種々の薬液で基材を処理した後でも液体状として存在しうる化合物が好ましい。具体的な一例としては、25℃の状態から10℃/分の昇温条件で250℃まで加熱した後、25℃に冷却した後の25℃での粘度が1~100,000mPa・sであることが好ましく、10~20,000mPa・sがより好ましく、100~15,000mPa・sが一層好ましい。
 このような特性を有するフッ素系液体状化合物としては、反応性基を有さない、非熱硬化性化合物であることが好ましい。ここでいう反応性基とは、250℃の加熱で反応する基全般を指し、重合性基、加水分解性基などが挙げられる。具体的には、例えば、(メタ)アクリル基、エポキシ基、イソシアナト基などが挙げられる。
 また、フッ素系液体状化合物は、25℃から、20℃/分で昇温した10%熱質量減少温度が、250℃以上であることが好ましく、280℃以上がより好ましい。また、上限値は、特に限定はないが、例えば、1000℃以下が好ましく、800℃以下がより好ましい。この態様によれば、耐熱性に優れた接着層を形成しやすい。なお、質量減少温度とは、熱重量測定装置(TGA)により、窒素気流下において、上記昇温条件で測定した値である。
The fluorinated liquid compound is preferably a compound that is not denatured during the treatment of the substrate used for temporary adhesion. For example, a compound that can exist in a liquid state even after heating at 250 ° C. or higher or treating the substrate with various chemical solutions is preferable. As a specific example, the viscosity at 25 ° C. is 1 to 100,000 mPa · s after heating to 250 ° C. under a temperature rising condition of 10 ° C./min from a state of 25 ° C. It is preferably 10 to 20,000 mPa · s, more preferably 100 to 15,000 mPa · s.
The fluorinated liquid compound having such characteristics is preferably a non-thermosetting compound having no reactive group. The reactive group here refers to all groups that react by heating at 250 ° C., and examples thereof include a polymerizable group and a hydrolyzable group. Specifically, a (meth) acryl group, an epoxy group, an isocyanato group, etc. are mentioned, for example.
Further, in the fluorinated liquid compound, the 10% thermal mass reduction temperature raised from 25 ° C. at 20 ° C./min is preferably 250 ° C. or more, and more preferably 280 ° C. or more. Moreover, although an upper limit does not have limitation in particular, For example, 1000 degrees C or less is preferable and 800 degrees C or less is more preferable. According to this aspect, it is easy to form an adhesive layer having excellent heat resistance. In addition, mass decreasing temperature is a value measured on the said temperature rising conditions in nitrogen stream by the thermogravimetry apparatus (TGA).
 フッ素系液体状化合物は、親油基を含有することが好ましい。親油基としては、直鎖または分岐のアルキル基、シクロアルキル基、芳香族基などが挙げられる。 The fluorinated liquid compound preferably contains a lipophilic group. Examples of the lipophilic group include linear or branched alkyl groups, cycloalkyl groups, and aromatic groups.
 アルキル基の炭素数は、2~30が好ましく、4~30がより好ましく、6~30がさらに好ましく、12~20が特に好ましい。アルキル基の具定例としては、例えば、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ドデシル基、テトラデシル基、オクタデシル基、イソプロピル基、イソブチル基、sec-ブチル基、tert-ブチル基、1-エチルペンチル基、2-エチルヘキシル基が挙げられる。
 アルキル基は、置換基を有していてもよい。置換基としては、ハロゲン原子、アルコキシ基、芳香族基などが挙げられる。
 ハロゲン原子としては、塩素原子、フッ素原子、臭素原子、ヨウ素原子などが挙げられ、フッ素原子が好ましい。
 アルコキシ基の炭素数は、1~30が好ましく、1~20がより好ましく、1~10がさらに好ましい。アルコキシ基は、直鎖または分岐が好ましい。
 芳香族基は、単環であってもよく、多環であってもよい。芳香族基の炭素数は、6~20が好ましく、6~14がより好ましく、6~10が最も好ましい。
The number of carbon atoms in the alkyl group is preferably 2 to 30, more preferably 4 to 30, further preferably 6 to 30, and particularly preferably 12 to 20. Specific examples of alkyl groups include, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, octadecyl, isopropyl Group, isobutyl group, sec-butyl group, tert-butyl group, 1-ethylpentyl group, 2-ethylhexyl group.
The alkyl group may have a substituent. Examples of the substituent include a halogen atom, an alkoxy group, and an aromatic group.
Examples of the halogen atom include a chlorine atom, a fluorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
The alkoxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms. The alkoxy group is preferably linear or branched.
The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and most preferably 6 to 10.
 シクロアルキル基は、単環であってもよく、多環であってもよい。シクロアルキル基の炭素数は、3~30が好ましく、4~30がより好ましく、6~30がさらに好ましく、6~20が最も好ましい。単環のシクロアルキル基としては、例えば、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基及びシクロオクチル基が挙げられる。多環のシクロアルキル基としては、例えば、アダマンチル基、ノルボルニル基、ボルニル基、カンフェニル基、デカヒドロナフチル基、トリシクロデカニル基、テトラシクロデカニル基、カンホロイル基、ジシクロヘキシル基及びピネニル基が挙げられる。
 シクロアルキル基は、上述した置換基を有していてもよい。
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group preferably has 3 to 30 carbon atoms, more preferably 4 to 30 carbon atoms, still more preferably 6 to 30 carbon atoms, and most preferably 6 to 20 carbon atoms. Examples of the monocyclic cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group. Examples of the polycyclic cycloalkyl group include adamantyl group, norbornyl group, bornyl group, camphenyl group, decahydronaphthyl group, tricyclodecanyl group, tetracyclodecanyl group, camphoroyl group, dicyclohexyl group and pinenyl group. Can be mentioned.
The cycloalkyl group may have the substituent described above.
 芳香族基は、単環であってもよく、多環であってもよい。芳香族基の炭素数は、6~20が好ましく、6~14がより好ましく、6~10が最も好ましい。芳香族基は、環を構成する元素に、ヘテロ原子(例えば、窒素原子、酸素原子、硫黄原子など)を含まないことが好ましい。芳香族基の具体例としては、ベンゼン環、ナフタレン環、ペンタレン環、インデン環、アズレン環、ヘプタレン環、インデセン環、ペリレン環、ペンタセン環、アセタフタレン環、フェナントレン環、アントラセン環、ナフタセン環、クリセン環、トリフェニレン環、フルオレン環、ビフェニル環、ピロール環、フラン環、チオフェン環、イミダゾール環、オキサゾール環、チアゾール環、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、インドリジン環、インドール環、ベンゾフラン環、ベンゾチオフェン環、イソベンゾフラン環、キノリジン環、キノリン環、フタラジン環、ナフチリジン環、キノキサリン環、キノキサゾリン環、イソキノリン環、カルバゾール環、フェナントリジン環、アクリジン環、フェナントロリン環、チアントレン環、クロメン環、キサンテン環、フェノキサチイン環、フェノチアジン環、および、フェナジン環が挙げられる。
 芳香族基は、上述した置換基を有していてもよい。
The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and most preferably 6 to 10. It is preferable that the aromatic group does not contain a hetero atom (for example, a nitrogen atom, an oxygen atom, a sulfur atom, etc.) in the elements constituting the ring. Specific examples of the aromatic group include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acetaphthalene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene ring , Triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, thiazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, Benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthroline ring, Ntoren ring, chromene ring, xanthene ring, phenoxathiin ring, a phenothiazine ring, and a phenazine ring.
The aromatic group may have the above-described substituent.
 フッ素系液体状化合物は、親油基を1種のみ含む化合物であってもよく、2種以上を含んでいてもよい。また、親油基は、フッ素原子を含んでいてもよい。すなわち、本発明におけるフッ素系液体状化合物は、親油基のみがフッ素原子を含む化合物であってもよい。また、親油基の他に、フッ素元素を含む基(フッ素基ともいう)を更に有する化合物であってもよい。好ましくは、親油基とフッ素基とを含む化合物である。フッ素系液体状化合物が親油基とフッ素基を有する化合物である場合、親油基はフッ素原子を含んでいてもよく、含んでいなくてもよいが、親油基はフッ素原子を含んでいないことが好ましい。
 フッ素系液体状化合物は、一分子中に親油基を1個以上有し、2~100個有することが好ましく、6~80個有することが特に好ましい。
The fluorinated liquid compound may be a compound containing only one kind of lipophilic group, or may contain two or more kinds. The lipophilic group may contain a fluorine atom. That is, the fluorinated liquid compound in the present invention may be a compound in which only the lipophilic group contains a fluorine atom. In addition to the lipophilic group, a compound further having a group containing a fluorine element (also referred to as a fluorine group) may be used. Preferably, it is a compound containing a lipophilic group and a fluorine group. When the fluorinated liquid compound is a compound having a lipophilic group and a fluorine group, the lipophilic group may or may not contain a fluorine atom, but the lipophilic group contains a fluorine atom. Preferably it is not.
The fluorinated liquid compound has at least one lipophilic group in one molecule, preferably 2 to 100, particularly preferably 6 to 80.
 フッ素基としては、既知のフッ素基を使用することができる。例えば、含フッ素アルキル基、含フッ素アルキレン基等が挙げられる。なお、フッ素基のうち、親油基として機能するものは、親油基に含まれることとする。
 含フッ素アルキル基の炭素数は、1~30が好ましく、1~20がより好ましく、1~15がより好ましい。含フッ素アルキル基は、直鎖、分岐、環状のいずれであってもよい。また、エーテル結合を有していてもよい。また、含フッ素アルキル基は、水素原子の全てがフッ素原子に置換されたペルフルオロアルキル基であってもよい。
 含フッ素アルキレン基の炭素数は、2~30が好ましく、2~20がより好ましく、2~15がより好ましい。含フッ素アルキレン基は、直鎖、分岐、環状のいずれであってもよい。また、エーテル結合を有していてもよい。また、含フッ素アルキレン基は、水素原子の全てがフッ素原子に置換されたペルフルオロアルキレン基であってもよい。
As the fluorine group, a known fluorine group can be used. Examples thereof include a fluorine-containing alkyl group and a fluorine-containing alkylene group. Of the fluorine groups, those that function as lipophilic groups are included in the lipophilic groups.
The carbon number of the fluorine-containing alkyl group is preferably 1 to 30, more preferably 1 to 20, and more preferably 1 to 15. The fluorine-containing alkyl group may be linear, branched or cyclic. Moreover, you may have an ether bond. The fluorine-containing alkyl group may be a perfluoroalkyl group in which all of the hydrogen atoms are substituted with fluorine atoms.
The carbon number of the fluorine-containing alkylene group is preferably 2 to 30, more preferably 2 to 20, and more preferably 2 to 15. The fluorine-containing alkylene group may be linear, branched or cyclic. Moreover, you may have an ether bond. The fluorine-containing alkylene group may be a perfluoroalkylene group in which all of the hydrogen atoms are substituted with fluorine atoms.
 フッ素系液体状化合物は、フッ素原子の含有率が1~90質量%であることが好ましく、2~80質量%がより好ましく、5~70質量%が更に好ましい。フッ素含有率が上記範囲であれば、剥離性に優れる。
 フッ素原子の含有率は、「{(1分子中のフッ素原子数×フッ素原子の質量)/1分子中の全原子の質量}×100」で定義される。
The fluorine-containing liquid compound preferably has a fluorine atom content of 1 to 90% by mass, more preferably 2 to 80% by mass, and still more preferably 5 to 70% by mass. When the fluorine content is in the above range, the peelability is excellent.
The content of fluorine atoms is defined as “{(number of fluorine atoms in one molecule × mass of fluorine atoms) / mass of all atoms in one molecule} × 100”.
 フッ素系液体状化合物は、市販品を用いることもできる。例えば、DIC社製メガファックシリーズのF-251、F-281、F-477、F-553、F-554、F-555、F-556、F-557、F-558、F-559、F-560、F-561、F-563、F-565、F-567、F-568、F-571、R-40、R-41、R-43、R-94や、ネオス社製フタージェントシリーズの710F、710FM、710FS、730FL、730LMが好ましく挙げられる。 A commercially available product can be used as the fluorinated liquid compound. For example, F-251, F-281, F-477, F-553, F-554, F-555, F-557, F-558, F-559, F -560, F-561, F-563, F-565, F-567, F-568, F-571, R-40, R-41, R-43, R-94 710F, 710FM, 710FS, 730FL, and 730LM are preferred.
 本発明の仮止め接着剤において、フッ素系液体状化合物を用いる場合、その含有量は、溶剤を除いた仮止め接着剤の質量に対し、0.01~10質量%であることが好ましく、0.02~5質量%がより好ましい。下限は、0.03質量%以上が好ましい。上限は、1質量%以下が好ましく、0.5質量%未満がより好ましい。フッ素系液体状化合物の含有量が上記範囲であれば、接着性および剥離性に優れる。フッ素系液体状化合物は、1種単独であってもよいし、2種類以上を併用してもよい。2種類以上を併用する場合は、合計の含有量が上記範囲であることが好ましい。 In the temporary fixing adhesive of the present invention, when a fluorinated liquid compound is used, its content is preferably 0.01 to 10% by mass relative to the mass of the temporary fixing adhesive excluding the solvent. More preferably, the content is 0.02 to 5% by mass. The lower limit is preferably 0.03% by mass or more. The upper limit is preferably 1% by mass or less, and more preferably less than 0.5% by mass. If content of a fluorine-type liquid compound is the said range, it is excellent in adhesiveness and peelability. One type of fluorine-based liquid compound may be used alone, or two or more types may be used in combination. When using 2 or more types together, it is preferable that total content is the said range.
<<その他の成分>>
 本発明における仮止め接着剤は、本発明の効果を損なわない範囲で、必要に応じて、各種添加物、例えば、可塑剤、硬化剤、上記以外の触媒、充填剤、密着促進剤、紫外線吸収剤、凝集防止剤、エラストマーや他の高分子化合物等を配合することができる。これらの添加剤を配合する場合、その配合量は、それぞれ、仮止め接着剤の全固形分の3質量%以下が好ましく、1質量%以下がより好ましい。配合する場合の下限値は、それぞれ、0.0001質量%以上が好ましい。また、これらの添加剤の合計配合量は、仮止め接着剤の全固形分の10質量%以下であることが好ましく、3質量%以下であることがより好ましい。これらの成分を配合する場合の合計配合量の下限値は、0.0001質量%以上が好ましい。
<< Other ingredients >>
The temporary fixing adhesive in the present invention is within the range that does not impair the effects of the present invention, and various additives, for example, plasticizers, curing agents, catalysts other than the above, fillers, adhesion promoters, ultraviolet absorbers, if necessary. Agents, anti-aggregation agents, elastomers and other polymer compounds can be blended. When blending these additives, the blending amount is preferably 3% by mass or less, more preferably 1% by mass or less, based on the total solid content of the temporary fixing adhesive. The lower limit when blending is preferably 0.0001% by mass or more. Further, the total amount of these additives is preferably 10% by mass or less, more preferably 3% by mass or less, based on the total solid content of the temporary adhesive. The lower limit of the total blending amount when blending these components is preferably 0.0001% by mass or more.
 本発明における仮止め接着剤は、金属等の不純物を含まないことが好ましい。接着剤に含まれる不純物の含有量としては、1ppm以下が好ましく、1ppb以下がより好ましく、100ppt以下がさらに好ましく、10ppt以下が一層好ましく、実質的に含まないこと(測定装置の検出限界以下であること)が特に好ましい。
 仮止め接着剤から金属等の不純物を除去する方法としては、例えば、フィルタを用いた濾過を挙げることができる。フィルタ孔径としては、ポアサイズ10nm以下が好ましく、5nm以下がより好ましく、3nm以下が更に好ましい。フィルタの材質としては、ポリテトラフロロエチレン製、ポリエチレン製、ナイロン製のフィルタが好ましい。フィルタは、有機溶剤であらかじめ洗浄したものを用いてもよい。フィルタ濾過工程では、複数種類のフィルタを直列又は並列に接続して用いてもよい。複数種類のフィルタを使用する場合は、孔径及び/又は材質が異なるフィルタを組み合わせて使用しても良い。また、接着剤を複数回濾過してもよく、複数回濾過する工程が循環濾過工程であっても良い。
 また、仮止め接着剤に含まれる金属等の不純物を低減する方法としては、仮止め接着剤を構成する原料として金属含有量が少ない原料を選択する、仮止め接着剤を構成する原料に対してフィルタ濾過を行う、装置内をポリテトラフロロエチレン等でライニングしてコンタミネーションを可能な限り抑制した条件下で蒸留を行う等の方法を挙げることができる。仮止め接着剤を構成する原料に対して行うフィルタ濾過における好ましい条件は、上述した条件と同様である。
 フィルタ濾過の他、吸着材を用いて不純物の除去を行っても良く、フィルタ濾過と吸着材を組み合わせて使用しても良い。吸着材としては、公知の吸着材を用いることができ、例えば、シリカゲル、ゼオライトなどの無機系吸着材、活性炭などの有機系吸着材を使用することができる。
The temporary fixing adhesive in the present invention preferably does not contain impurities such as metals. The content of impurities contained in the adhesive is preferably 1 ppm or less, more preferably 1 ppb or less, still more preferably 100 ppt or less, even more preferably 10 ppt or less, and substantially not contained (below the detection limit of the measuring apparatus). Are particularly preferred.
Examples of a method for removing impurities such as metals from the temporary fixing adhesive include filtration using a filter. The filter pore diameter is preferably 10 nm or less, more preferably 5 nm or less, and still more preferably 3 nm or less. The filter material is preferably a polytetrafluoroethylene, polyethylene, or nylon filter. You may use the filter previously wash | cleaned with the organic solvent. In the filter filtration step, a plurality of types of filters may be connected in series or in parallel. When using a plurality of types of filters, filters having different hole diameters and / or materials may be used in combination. Moreover, the adhesive may be filtered a plurality of times, and the step of filtering a plurality of times may be a circulation filtration step.
Moreover, as a method of reducing impurities such as metals contained in the temporary fixing adhesive, a raw material having a low metal content is selected as a raw material constituting the temporary fixing adhesive. Examples of the method include filtering and performing distillation under conditions where the inside of the apparatus is lined with polytetrafluoroethylene or the like and contamination is suppressed as much as possible. The preferable conditions for filter filtration performed on the raw materials constituting the temporary fixing adhesive are the same as those described above.
In addition to filter filtration, impurities may be removed using an adsorbent, or filter filtration and adsorbent may be used in combination. As the adsorbent, known adsorbents can be used. For example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon can be used.
<仮止め接着剤の調製>
 本発明の仮止め接着剤は、上述の各成分を混合して調製することができる。各成分の混合は、通常、0℃~100℃の範囲で行われる。また、各成分を混合した後、例えば、フィルタでろ過することが好ましい。ろ過は、多段階で行ってもよいし、多数回繰り返してもよい。また、ろ過した液を再ろ過することもできる。
 フィルタとしては、従来からろ過用途等に用いられているものであれば特に限定されることなく用いることができる。例えば、ポリテトラフルオロエチレン(PTFE)等のフッ素樹脂、ナイロン-6、ナイロン-6,6等のポリアミド系樹脂、ポリエチレン、ポリプロピレン(PP)等のポリオレフィン樹脂(高密度、超高分子量のポリオレフィン樹脂を含む)等の素材を用いたフィルタが挙げられる。これら素材の中でもポリプロピレン(高密度ポリプロピレンを含む)およびナイロンが好ましい。
 フィルタの孔径は、例えば、0.003~5.0μm程度が適している。この範囲とすることにより、ろ過詰まりを抑えつつ、組成物に含まれる不純物や凝集物など、微細な異物を確実に除去することが可能となる。
 フィルタを使用する際、異なるフィルタを組み合わせても良い。その際、第一のフィルタでのフィルタリングは、1回のみでもよいし、2回以上行ってもよい。異なるフィルタを組み合わせて2回以上フィルタリングを行う場合は1回目のフィルタリングの孔径より2回目以降の孔径が同じか、もしくは小さい方が好ましい。また、上述した範囲内で異なる孔径の第一のフィルタを組み合わせてもよい。ここでの孔径は、フィルタメーカーの公称値を参照することができる。市販のフィルタとしては、例えば、日本ポール株式会社、アドバンテック東洋株式会社、日本インテグリス株式会社(旧日本マイクロリス株式会社)又は株式会社キッツマイクロフィルタ等が提供する各種フィルタの中から選択することができる。
<Preparation of temporary adhesive>
The temporary fixing adhesive of the present invention can be prepared by mixing the above-described components. The mixing of each component is usually performed in the range of 0 ° C to 100 ° C. Moreover, after mixing each component, it is preferable to filter with a filter, for example. Filtration may be performed in multiple stages or repeated many times. Moreover, the filtered liquid can also be refiltered.
Any filter can be used without particular limitation as long as it has been conventionally used for filtration. For example, fluororesins such as polytetrafluoroethylene (PTFE), polyamide resins such as nylon-6 and nylon-6,6, polyolefin resins such as polyethylene and polypropylene (PP) (polyolefin resins with high density and ultra high molecular weight) And a filter using a material such as). Among these materials, polypropylene (including high density polypropylene) and nylon are preferable.
The pore size of the filter is suitably about 0.003 to 5.0 μm, for example. By setting it within this range, it becomes possible to reliably remove fine foreign matters such as impurities and aggregates contained in the composition while suppressing filtration clogging.
When using filters, different filters may be combined. At that time, the filtering by the first filter may be performed only once or may be performed twice or more. When filtering two or more times by combining different filters, it is preferable that the second and subsequent hole diameters are the same or smaller than the first filtering hole diameter. Moreover, you may combine the 1st filter of a different hole diameter within the range mentioned above. The pore diameter here can refer to the nominal value of the filter manufacturer. As a commercially available filter, for example, it can be selected from various filters provided by Nippon Pole Co., Ltd., Advantech Toyo Co., Ltd., Japan Entegris Co., Ltd. (formerly Japan Microlith Co., Ltd.) or KITZ Micro Filter Co., Ltd. .
<仮止め接着剤の用途>
 本発明の仮止め接着剤は、接着性および剥離性に優れた接着層を形成することができる。このため、例えば、デバイスウエハに対し、機械的または化学的な処理を施す際に、デバイスウエハと支持体とを安定して仮接着できるとともに、デバイスウエハに対する仮接着を容易に解除できる。本発明の仮止め接着剤は、半導体装置製造用の仮止め接着剤として好適に用いることができる。
<Use of temporary adhesive>
The temporary fix adhesive of the present invention can form an adhesive layer excellent in adhesiveness and peelability. For this reason, for example, when mechanical or chemical treatment is performed on the device wafer, the device wafer and the support can be stably temporarily bonded together, and the temporary bonding to the device wafer can be easily released. The temporary fixing adhesive of the present invention can be suitably used as a temporary fixing adhesive for manufacturing a semiconductor device.
<接着フィルム>
 次に、本発明の接着フィルムについて説明する。
 本発明の接着フィルムは、本発明の仮止め接着剤からなる接着層を有する。
 本発明の接着フィルムにおいては、接着層の表層にケイ素系液体状化合物が偏在している。このため、剥離性に優れる。また、接着層はエラストマーを含むので、支持体や基材の微細な凹凸にも追従し適度なアンカー効果により、優れた接着性が得られる。このため、接着性と剥離性を両立できる。
 本発明の接着フィルムの接着層においては、ケイ素系液体状化合物の濃度が、接着層のいずれか一方の表面から、接着層の厚みの5%の範囲における領域と、厚み方向に5%を超えて50%の範囲における領域とで異なることが好ましい。
 接着層におけるケイ素系液体状化合物の濃度は、例えば、エッチングを行いながらX線光電子分光(ESCA)測定を行う方法や、斜め切削と飛行時間型二次イオン質量分析(TOF-SIMS)測定を組み合わせる方法で測定できる。
<Adhesive film>
Next, the adhesive film of the present invention will be described.
The adhesive film of the present invention has an adhesive layer made of the temporary adhesive of the present invention.
In the adhesive film of the present invention, the silicon-based liquid compound is unevenly distributed in the surface layer of the adhesive layer. For this reason, it is excellent in peelability. In addition, since the adhesive layer contains an elastomer, excellent adhesiveness can be obtained by following the fine irregularities of the support and the substrate and by an appropriate anchor effect. For this reason, both adhesiveness and peelability can be achieved.
In the adhesive layer of the adhesive film of the present invention, the concentration of the silicon-based liquid compound exceeds 5% in the thickness direction and the region in the range of 5% of the thickness of the adhesive layer from either surface of the adhesive layer. It is preferable that the difference in the region in the range of 50%.
The concentration of the silicon-based liquid compound in the adhesive layer can be determined by combining, for example, a method of performing X-ray photoelectron spectroscopy (ESCA) measurement while performing etching, or oblique cutting and time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurement. It can be measured by the method.
 本発明の接着フィルムは、溶剤含有率が、1質量%以下が好ましく、0.1質量%以下がより好ましく、含有しないことが特に好ましい。なお、接着フィルムの溶剤含有率は、ガスクロマトグラフィー法で測定できる。 The solvent content of the adhesive film of the present invention is preferably 1% by mass or less, more preferably 0.1% by mass or less, and particularly preferably not contained. The solvent content of the adhesive film can be measured by a gas chromatography method.
 本発明の接着フィルムにおいて、接着層の平均厚みは、特に限定されるものではないが、例えば、0.1~500μmが好ましく、0.1~200μmがより好ましく、10~200μmが更に好ましく、50~200μmが特に好ましい。接着層の平均厚みが上記範囲であれば、平坦性に優れた接着フィルムとし易い。本発明において、接着層の平均厚みは、エリプソメトリーにより5点測定した点の平均値と定義する。 In the adhesive film of the present invention, the average thickness of the adhesive layer is not particularly limited, but is preferably 0.1 to 500 μm, more preferably 0.1 to 200 μm, still more preferably 10 to 200 μm, and 50 Particularly preferred is ~ 200 μm. When the average thickness of the adhesive layer is in the above range, it is easy to obtain an adhesive film having excellent flatness. In the present invention, the average thickness of the adhesive layer is defined as the average value of five points measured by ellipsometry.
 本発明の接着フィルムは、接着層単層であってもよいし、接着層の片面または両面に、他の層を有していてもよい。他の層としては、離型層が例示される。
 離型層の平均厚みは、0.001~1μmが好ましく、0.01~0.5μmがより好ましい。上記範囲であれば、接着フィルムが適度な接着力を有し、基材や支持体との接着性が良好であるとともに、接着フィルムを基材や支持体から容易に剥離することができる。なお、本発明において、離型層の平均厚みは、エリプソメトリーにより5点測定した点の平均値と定義する。離型層は、フッ素原子を含有する化合物を含むことが好ましい。離型層の詳細は、特開2014-066385号公報の段落0068~0145の記載を参酌でき、これらの内容は本明細書に組み込まれる。
 また、本発明の接着フィルムは、離型層を有さない構成としてもよい。それは、本発明における仮止め接着剤からなる接着層自体が剥離性を有しているためである。
The adhesive film of the present invention may be a single adhesive layer or may have other layers on one or both sides of the adhesive layer. An example of the other layer is a release layer.
The average thickness of the release layer is preferably 0.001 to 1 μm, and more preferably 0.01 to 0.5 μm. If it is the said range, while an adhesive film has moderate adhesive force and adhesiveness with a base material or a support body is good, an adhesive film can be easily peeled from a base material or a support body. In the present invention, the average thickness of the release layer is defined as the average value of five points measured by ellipsometry. The release layer preferably contains a compound containing a fluorine atom. Details of the release layer can be referred to the descriptions in paragraphs 0068 to 0145 of JP-A-2014-066385, and the contents thereof are incorporated in the present specification.
Moreover, the adhesive film of this invention is good also as a structure which does not have a mold release layer. This is because the adhesive layer itself made of the temporary adhesive in the present invention has peelability.
 本発明の接着フィルムは、接着層の片面または両面に、離型フィルムを貼合して「離型フィルム付き接着フィルム」としてもよい、この態様によれば、長尺状の接着フィルムをロール状に巻き取る際に、接着層の表面に傷がついたり、保管中に貼りついたりするトラブルを防止することができる。
 離型フィルムは、使用する際に剥離除去することができる。例えば、両面に離型フィルムが貼合されている場合においては、片面の離型フィルムを剥がし、接着面を基材や支持体などにラミネートした後で、残った離型フィルムを剥がすことで、シート面の清浄をできるだけ保つことができる。
The adhesive film of this invention is good also as a "adhesive film with a release film" by sticking a release film on the single side | surface or both surfaces of an adhesive layer. According to this aspect, a long adhesive film is roll shape. It is possible to prevent troubles that the surface of the adhesive layer is scratched or sticks during storage when it is rolled up.
The release film can be peeled off when used. For example, in the case where the release film is bonded on both sides, by peeling off the release film on one side, laminating the adhesive surface to a substrate or support, and then peeling off the remaining release film, The sheet surface can be kept as clean as possible.
<接着フィルムの製造方法>
 本発明の接着フィルムは、従来公知の方法により製造できる。例えば、溶融製膜法、溶液製膜法などにより製造できる。
 溶融製膜法は、原料組成物を過熱して溶融することで流動性を実現し、この融液を押出成型装置や射出成型装置を使用してシート状にし、冷却することでフィルム(シート)を得る方法である。
 押出成型法では、ロール状の長尺フィルムを得ることができる。射出成型法では長尺フィルムを得ることは難しいが高い膜厚精度を得られる。他の添加剤も混合、溶融、撹拌することで添加することができる。このフィルムの片面または両面に離型フィルムを貼合して、「離型フィルム付き接着フィルム」としても良い。
 溶液製膜法は、原料組成物を溶剤で溶解することで流動性を実現し、この溶液をフィルムやドラムやバンドなどの支持体に塗工してシート状にし、乾燥することでフィルム(シート)を得る方法である。塗工するには、スリット状の開口から溶液を圧力で押し出して塗工する方法、グラビアやアロニクスローラーで溶液を転写して塗工する方法、スプレーやディスペンサーから溶液を吐出しながら走査して塗工する方法、溶液をタンクに溜めてその中にフィルムやドラムやバンドを通過させることでディップ塗工する方法、ワイヤバーで溶液を押流ししながらかきとることで塗工する方法などが挙げられる。他の添加剤も溶解して混合、撹拌した溶液を使うことで添加することができる。支持体に溶液を塗工した後に、乾燥して固体化したシートになった後、シートを支持体から機械的に引き剥がすことにより、単体のフィルム(シート)を得ることができる。引き剥がしやすいように、予め支持体上に離型性を付与する処理として、離型層の塗布、浸漬処理、ガス処理、電磁波照射処理、プラズマ照射処理などを行っても良い。あるいは、フィルムを支持体から引き剥がさずにそのまま残して、フィルム支持体上にシートが接着した状態のまま、「離型フィルム付き接着フィルム」としても良い。これらの処理を連続的に行うことで、ロール状の長尺フィルムを得ることができる。また、接着フィルムの両面に、離型フィルムを貼合して、「両面離型フィルム付きシート」としても良い。
<Method for producing adhesive film>
The adhesive film of the present invention can be produced by a conventionally known method. For example, it can be produced by a melt film forming method, a solution film forming method or the like.
The melt film forming method realizes fluidity by heating and melting the raw material composition, and forming this melt into a sheet using an extrusion molding apparatus or an injection molding apparatus, and cooling it to form a film (sheet) Is the way to get.
In the extrusion molding method, a roll-like long film can be obtained. Although it is difficult to obtain a long film by the injection molding method, high film thickness accuracy can be obtained. Other additives can also be added by mixing, melting and stirring. A release film may be bonded to one side or both sides of the film to form an “adhesive film with a release film”.
The solution casting method realizes fluidity by dissolving the raw material composition with a solvent, and coats this solution on a support such as a film, drum or band to form a sheet, and then the film (sheet) ). To apply, apply the solution by extruding the solution with pressure from the slit-shaped opening, transferring the solution with a gravure or an aronics roller, and scanning while discharging the solution from a spray or dispenser. Examples include coating methods, dip coating by storing the solution in a tank and passing it through a film, drum or band, and coating by scraping the solution with a wire bar. . Other additives can also be added by using a solution that is dissolved, mixed and stirred. A single film (sheet) can be obtained by coating the solution on the support, then drying to form a solid sheet, and then mechanically peeling the sheet from the support. In order to easily peel off, a release layer may be applied on the support in advance by applying a release layer, immersion treatment, gas treatment, electromagnetic wave irradiation treatment, plasma irradiation treatment, or the like. Or it is good also as an "adhesive film with a release film", leaving a film as it is, without peeling off from a support body, and the sheet | seat adhere | attached on the film support body. By performing these treatments continuously, a roll-like long film can be obtained. Alternatively, a release film may be bonded to both sides of the adhesive film to form a “sheet with a double-sided release film”.
<接着性支持体>
 次に、本発明の接着性支持体について説明する。
 本発明の接着性支持体は、支持体と、本発明の仮止め接着剤からなる接着層とを有する。接着層は、エラストマーとして、上述したエラストマーXとエラストマーYとを含むことが好ましい。
 接着層の平均厚みは、用途により異なるが、例えば、0.1~500μmが好ましい。
 接着層は、支持体表面に、本発明の仮止め接着剤を、スピンコート法、スプレー法、ローラーコート法、フローコート法、ドクターコート法、浸漬法などを用いて塗布し、乾燥(ベーク)することにより形成することができる。乾燥は、例えば、60~150℃で、10秒~2分行う。この場合の接着層の平均厚みは、特に限定されるものではないが、例えば、1~100μmが好ましく、1~10μmがより好ましい。
 また、接着層は、支持体上に、上述した本発明の接着フィルムをラミネートして形成することもできる。接着フィルムを使用して接着層を形成することで、溶剤への溶解性の悪いエラストマーなどの材料を用いても接着層を形成できるため、耐熱性や耐薬品性に優れた接着層を形成しやすい。また、10μm以上の厚膜の接着層を厚みムラなく平坦に作製することができる。この場合の接着層の平均厚みは、特に限定されるものではないが、例えば、0.1~200μmが好ましく、10~200μmがより好ましく、50~200μmが特に好ましい。
 接着フィルムを用いて支持体上に接着層を形成するには、例えば、接着フィルムを真空ラミネーターにセットし、本装置にて接着フィルムを支持体上に位置させ、真空下で、接着フィルムと支持体とを接触させ、ローラなどで圧着して接着フィルムを支持体に固定(積層)する方法などが挙げられる。また、支持体に固定された接着フィルム(接着層)は、例えば円形状など、所望の形状にカットしてもよい。
<Adhesive support>
Next, the adhesive support of the present invention will be described.
The adhesive support body of this invention has a support body and the contact bonding layer which consists of a temporary fix | bonding adhesive of this invention. The adhesive layer preferably includes the elastomer X and the elastomer Y described above as the elastomer.
The average thickness of the adhesive layer varies depending on the application, but is preferably, for example, 0.1 to 500 μm.
The adhesive layer is applied to the support surface by applying the temporary adhesive of the present invention using a spin coating method, a spray method, a roller coating method, a flow coating method, a doctor coating method, a dipping method, or the like, and is dried (baked). Can be formed. Drying is performed, for example, at 60 to 150 ° C. for 10 seconds to 2 minutes. The average thickness of the adhesive layer in this case is not particularly limited, but is preferably 1 to 100 μm, and more preferably 1 to 10 μm.
The adhesive layer can also be formed by laminating the above-described adhesive film of the present invention on a support. By forming an adhesive layer using an adhesive film, an adhesive layer can be formed even with materials such as elastomers that are poorly soluble in solvents, so an adhesive layer with excellent heat resistance and chemical resistance is formed. Cheap. In addition, a thick adhesive layer having a thickness of 10 μm or more can be made flat without thickness unevenness. The average thickness of the adhesive layer in this case is not particularly limited, but is preferably 0.1 to 200 μm, more preferably 10 to 200 μm, and particularly preferably 50 to 200 μm.
To form an adhesive layer on a support using an adhesive film, for example, set the adhesive film on a vacuum laminator, place the adhesive film on the support with this device, and support the adhesive film and the support under vacuum. And a method of fixing (laminating) an adhesive film to a support by bringing the body into contact with each other and pressing with a roller or the like. Moreover, you may cut the adhesive film (adhesion layer) fixed to the support body in desired shapes, such as circular shape, for example.
 本発明の接着性支持体において、接着層は、ケイ素系液体状化合物の濃度が、支持体の反対側の表面から接着層の厚み方向に5%の範囲における領域が、支持体の反対側の表面から接着層の厚み方向に5%を超えて50%の範囲における領域よりも高くされていることが好ましい。この態様によれば、接着性支持体をデバイスウエハ等の基材に仮接着したのち、デバイスウエハから剥離する際において、剥離性が向上する。更には、基材やデバイスウエハ等の表面から接着層を機械剥離等の方法で容易に除去することができる。
 ケイ素系液体状化合物の濃度は、支持体の反対側の表面から接着層の厚み方向に5%の範囲における領域が、支持体の反対側の表面から接着層の厚み方向に5%を超えて50%の範囲における領域より10質量%以上多いことが好ましく、30質量%以上多いことがより好ましい。
In the adhesive support of the present invention, the adhesive layer has a region where the concentration of the silicon-based liquid compound is 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support. It is preferable to be higher than the region in the range of more than 5% and 50% in the thickness direction of the adhesive layer from the surface. According to this aspect, the peelability is improved when the adhesive support is temporarily bonded to a substrate such as a device wafer and then peeled from the device wafer. Furthermore, the adhesive layer can be easily removed from the surface of the substrate or device wafer by a method such as mechanical peeling.
The concentration of the silicon-based liquid compound ranges from 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support to more than 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support. It is preferably more than 10% by mass and more preferably more than 30% by mass than the region in the range of 50%.
 本発明の接着性支持体において、支持体(キャリア支持体ともいう)は特に限定されないが、例えば、シリコン基板、ガラス基板、金属基板、化合物半導体基板などが挙げられる。なかでも、半導体装置の基板として代表的に用いられるシリコン基板を汚染しにくい点や、半導体装置の製造工程において汎用されている静電チャックを使用できる点などを鑑みると、シリコン基板であることが好ましい。
 支持体の厚みは、特に限定されるものではないが、例えば、300μm~100mmが好ましく、300μm~10mmがより好ましい。
 支持体は、その表面に離型層を有するものであってもよい。すなわち、支持体は、シリコン基板等の基板の表面に離型層を有する離型層付支持体であってもよい。
 離型層としては、フッ素原子および/またはケイ素原子を含む低表面エネルギー層が好ましく、フッ素原子および/またはケイ素原子を含む材料を有することが好ましい。離型層のフッ素含有率は、30~80質量%が好ましく、40~76質量%がより好ましく、60~75質量%が特に好ましい。
 離型層の材料としては、上述した接着フィルムの表層に形成されていてもよい離型層と同様のものを用いることができる。
In the adhesive support of the present invention, the support (also referred to as a carrier support) is not particularly limited, and examples thereof include a silicon substrate, a glass substrate, a metal substrate, and a compound semiconductor substrate. In particular, in view of the point that it is difficult to contaminate a silicon substrate typically used as a substrate of a semiconductor device and the point that an electrostatic chuck widely used in the manufacturing process of a semiconductor device can be used, it is a silicon substrate. preferable.
The thickness of the support is not particularly limited, but is preferably 300 μm to 100 mm, and more preferably 300 μm to 10 mm.
The support may have a release layer on its surface. That is, the support may be a support with a release layer having a release layer on the surface of a substrate such as a silicon substrate.
The release layer is preferably a low surface energy layer containing fluorine atoms and / or silicon atoms, and preferably has a material containing fluorine atoms and / or silicon atoms. The fluorine content of the release layer is preferably 30 to 80% by mass, more preferably 40 to 76% by mass, and particularly preferably 60 to 75% by mass.
As the material for the release layer, the same material as the release layer that may be formed on the surface layer of the adhesive film described above can be used.
<積層体>
 次に、本発明の積層体について説明する。本発明の積層体は、支持体と、本発明の仮止め接着剤からなる接着層と、基材を有する。
 以下、図1および2に従って本発明の積層体の好ましい実施形態を説明する。本発明の積層体の実施形態がこれらに限定されるものではないことは言うまでもない。尚、図1および図2において、1は基材を、2は支持体を、3、3A、3Bは、それぞれ、接着層を示している。
<Laminated body>
Next, the laminated body of this invention is demonstrated. The laminate of the present invention has a support, an adhesive layer made of the temporary fixing adhesive of the present invention, and a substrate.
Hereinafter, preferred embodiments of the laminate of the present invention will be described with reference to FIGS. Needless to say, embodiments of the laminate of the present invention are not limited to these embodiments. 1 and 2, reference numeral 1 denotes a base material, 2 denotes a support, and 3, 3A and 3B denote adhesive layers.
 本発明の積層体の第一の実施形態は、図1に示すように、接着層3が支持体2の表面に位置し、基材1が接着層3の支持体とは反対側の表面に位置する態様である。このように、基材と支持体との間に接着層3を有し、接着層3が基材および支持体に接してなるものであることが積層体形成のスループットを向上できる点で好ましい。つまり、積層体において、基材と支持体の間には、上述した離型層を含まず、接着層のみである態様が例示される。
 第一の実施形態においては、支持体と本発明の仮止め接着剤からなる接着層との剥離強度Aと、本発明の仮止め接着剤からなる接着層と基材との剥離強度Bは、以下の式(1)および式(2)を満たすことが好ましい。
 A<B   ・・・・式(1)
 B≦4N/cm   ・・・・式(2)
 剥離強度Aおよび剥離強度Bが上記式(1)の関係を満たすことにより、基材から支持体を剥離する際に、支持体と本発明の仮止め接着剤からなる接着層との界面から剥離することができる。
 そして、剥離強度Bが上記式(2)の関係を満たすことにより、接着層をフィルム状のまま基材表面から容易に剥離することができる。すなわち、接着層を機械剥離により簡単に剥離することができる。
 上記剥離強度Bは3N/cm以下が好ましく、2N/cm以下がより好ましい。
 なお、本発明における剥離強度は、90°方向に引き上げた時にかかる強度を測定した値である。剥離強度Aは基材を固定し、支持体の端部を90°方向に、50mm/minの速度で引き上げた時に掛かる力を表す。剥離強度Bは、基材を固定し、フィルム状の接着層を90°方向に50mm/minの速度で引き上げた時に掛かる力を表す。
In the first embodiment of the laminate of the present invention, as shown in FIG. 1, the adhesive layer 3 is located on the surface of the support 2, and the substrate 1 is on the surface opposite to the support of the adhesive layer 3. It is the mode which is located. Thus, it is preferable that the adhesive layer 3 is provided between the base material and the support, and the adhesive layer 3 is in contact with the base material and the support in terms of improving the throughput of forming the laminate. That is, in the laminate, an embodiment in which the above-described release layer is not included between the base material and the support, and only the adhesive layer is exemplified.
In the first embodiment, the peel strength A between the support and the adhesive layer made of the temporary adhesive of the present invention, and the peel strength B of the adhesive layer made of the temporary adhesive of the present invention and the substrate are as follows: It is preferable to satisfy the following formulas (1) and (2).
A <B Formula (1)
B ≦ 4N / cm ・ ・ ・ ・ Formula (2)
When the peel strength A and the peel strength B satisfy the relationship of the above formula (1), when peeling the support from the base material, the peel strength A and the peel strength B peel from the interface between the support and the adhesive layer made of the temporary fixing adhesive of the present invention can do.
And when peeling strength B satisfy | fills the relationship of said Formula (2), an adhesive layer can be easily peeled from the base-material surface with a film form. That is, the adhesive layer can be easily peeled off by mechanical peeling.
The peel strength B is preferably 3 N / cm or less, and more preferably 2 N / cm or less.
The peel strength in the present invention is a value obtained by measuring the strength when pulled up in the 90 ° direction. Peel strength A represents the force applied when the substrate is fixed and the end of the support is pulled up in the 90 ° direction at a speed of 50 mm / min. The peel strength B represents the force applied when the substrate is fixed and the film-like adhesive layer is pulled up in the 90 ° direction at a speed of 50 mm / min.
 本発明の積層体については、基材から支持体を剥離する際に、本発明の仮止め接着剤からなる接着層が基材と接着層との界面から剥離されて、基材の接着層との剥離面の面積の50%以上の範囲において、上記ケイ素系液体状化合物の残渣が付着しているか、あるいは、接着層が支持体と接着層との界面から剥離されて、支持体の接着層の剥離面の面積の50%以上の範囲において、上記ケイ素系液体状化合物の残渣が付着していることが好ましい。また、エラストマー由来の残渣は、上記剥離面の面積の50%以上の範囲において付着していないことが好ましく、99%以上の範囲において付着していないことがより好ましい。
 ケイ素系液体状化合物の残渣、および、エラストマー由来の残渣は、目視、光学顕微鏡、走査型電子顕微鏡、X線光電子分光などで観測できるが、本発明では特に、剥離面をX線光電子分光により測定したものとする。
 なお、本明細書において、「ケイ素系液体状化合物の残渣」は、接着層のケイ素系液体状化合物成分であり、「エラストマー由来の残渣」とは、接着層のエラストマー成分を意味する。
For the laminate of the present invention, when the support is peeled from the base material, the adhesive layer made of the temporary adhesive of the present invention is peeled from the interface between the base material and the adhesive layer, In the range of 50% or more of the area of the peeled surface, the residue of the silicon-based liquid compound is adhered, or the adhesive layer is peeled from the interface between the support and the adhesive layer, and the adhesive layer of the support In the range of 50% or more of the area of the peeled surface, the residue of the silicon-based liquid compound is preferably attached. Moreover, it is preferable that the residue derived from an elastomer does not adhere in the range of 50% or more of the area of the peeling surface, and more preferably does not adhere in a range of 99% or more.
Residues of silicon-based liquid compounds and elastomer-derived residues can be observed by visual observation, optical microscope, scanning electron microscope, X-ray photoelectron spectroscopy, etc. In the present invention, the peeled surface is measured by X-ray photoelectron spectroscopy. Shall be.
In the present specification, “residue of silicon-based liquid compound” is a silicon-based liquid compound component of the adhesive layer, and “residue derived from elastomer” means an elastomer component of the adhesive layer.
 本発明の積層体は、上述した本発明の接着性支持体の、接着層が形成された側の面と、基材とを加熱圧着することにより製造できる。加圧接着条件は、例えば、温度100~200℃、圧力0.01~1MPa、時間は1~15分が好ましい。 The laminate of the present invention can be produced by thermocompression bonding the surface of the adhesive support of the present invention described above on which the adhesive layer is formed and the substrate. The pressure bonding conditions are preferably, for example, a temperature of 100 to 200 ° C., a pressure of 0.01 to 1 MPa, and a time of 1 to 15 minutes.
 本発明の積層体の第二の実施形態は、図2に示す態様であって、支持体2と、接着層3Aと、基材1が、上記順に積層しており、かつ、支持体2と接着層3Aの間に、接着層3Aとは組成が異なる第2の接着層3Bを有する態様である。本実施形態においては、基材1と接着層3A、接着層3Aと第2の接着層3B、第2の接着層3Bと支持体2は、表面において接していることが好ましい。
 第二の実施形態のように、接着層を2層以上とすることで、支持体と基材とを埋め込み性よく(空隙が無いように)貼り合せ易いという利点がある。特に、支持体2側に、接着層3Bを設け、基材1側に第2の接着層3Aを設け、これらを貼り合わせることによって、埋め込み性をより効果的に向上させることができる。
2nd embodiment of the laminated body of this invention is an aspect shown in FIG. 2, Comprising: The support body 2, adhesive layer 3A, and the base material 1 are laminated | stacked in the said order, and the support body 2 and In this embodiment, a second adhesive layer 3B having a composition different from that of the adhesive layer 3A is provided between the adhesive layers 3A. In the present embodiment, the substrate 1 and the adhesive layer 3A, the adhesive layer 3A and the second adhesive layer 3B, and the second adhesive layer 3B and the support 2 are preferably in contact with each other on the surface.
By using two or more adhesive layers as in the second embodiment, there is an advantage that the support and the base material can be easily bonded together (with no voids). In particular, the embedding property can be improved more effectively by providing the adhesive layer 3B on the support 2 side and providing the second adhesive layer 3A on the substrate 1 side and bonding them together.
 本発明の積層体の第三の実施形態は、支持体2と、接着層3Aと、基材1が、上記順に積層しており、かつ、接着層3Aと基材の間に接着層とは組成が異なる第2の接着層を有する態様である。本実施形態においては、支持体2と接着層3A、接着層3Aと第2の接着層3B、第2の接着層3Bと基材は、表面において接していることが好ましい。 In the third embodiment of the laminate of the present invention, the support 2, the adhesive layer 3 </ b> A, and the substrate 1 are laminated in the above order, and the adhesive layer is between the adhesive layer 3 </ b> A and the substrate. In this embodiment, the second adhesive layer has a different composition. In the present embodiment, the support 2 and the adhesive layer 3A, the adhesive layer 3A and the second adhesive layer 3B, and the second adhesive layer 3B and the substrate are preferably in contact with each other on the surface.
 次に、第二及び第三の実施形態における第2の接着層を詳細に説明する。第2の接着層3Bは、本発明の仮止め接着剤からなる接着層3Aとは組成が異なる接着層である限り特に定めるものではない。従って、第2の接着層3Bも、本発明の仮止め接着剤と同じ構成成分からなる接着層であってもよい。但し、この場合は、接着層3Aと接着層3Bは、互いに組成が異なる。
 本発明では、第2の接着層が、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含むことが好ましい。このような接着層を用いることにより、接着性をより向上させることができる。さらに、第2の接着層における、25℃で液体状であって、シリコン原子を含有する化合物の含有量は、接着層に含まれる、25℃で液体状であって、シリコン原子を含有する化合物の含有量の10質量%以下であることが好ましい。このような第2の接着層を採用することにより、剥離界面をより調整しやすくなる。
 例えば、基材(デバイスウエハ)/第2の接着層/本発明の仮止め接着剤からなる接着層/支持体(キャリア)において、基材と第2の接着層の間を剥離するのに必要な力が、本発明の仮止め接着剤からなる接着層と支持体の間を剥離するのに必要な力よりも大きくすると、支持体と本発明の仮止め接着剤からなる接着層の間で剥離させることができる。このような構成とすることにより、剥離が一層容易になる。
 また、本発明における第2の接着層は、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYを含むことが好ましい。このような構成とすることにより、ウエハの反りを効果的に抑制することができる。
 第2の接着層における、エラストマーXおよびエラストマーY、並びにその配合比率は、本発明の仮止め接着剤の所で述べたものと同義であり好ましい範囲も同様である。また、第2の接着層にも、本発明の仮止め接着剤の所で述べた各種添加剤等を配合してもよい。
Next, the second adhesive layer in the second and third embodiments will be described in detail. The second adhesive layer 3B is not particularly defined as long as it is an adhesive layer having a composition different from that of the adhesive layer 3A made of the temporary adhesive of the present invention. Therefore, the second adhesive layer 3B may also be an adhesive layer made of the same components as the temporary fixing adhesive of the present invention. However, in this case, the adhesive layer 3A and the adhesive layer 3B have different compositions.
In the present invention, it is preferable that the second adhesive layer contains an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units. By using such an adhesive layer, the adhesiveness can be further improved. Furthermore, the content of the compound that is liquid at 25 ° C. and contains silicon atoms in the second adhesive layer is the compound that is liquid at 25 ° C. and contains silicon atoms contained in the adhesive layer It is preferable that it is 10 mass% or less of content of. By adopting such a second adhesive layer, it becomes easier to adjust the peeling interface.
For example, in the base material (device wafer) / second adhesive layer / adhesive layer / support (carrier) comprising the temporary fixing adhesive of the present invention, it is necessary for peeling between the base material and the second adhesive layer. If the force is larger than the force necessary to peel between the adhesive layer made of the temporary adhesive of the present invention and the support, the adhesive layer made of the temporary adhesive of the present invention will Can be peeled off. By adopting such a configuration, peeling becomes easier.
Moreover, it is preferable that the 2nd contact bonding layer in this invention contains the elastomer Y which contains the repeating unit derived from styrene in the ratio of 10 mass% or more and less than 50 mass% in all the repeating units. By setting it as such a structure, the curvature of a wafer can be suppressed effectively.
In the second adhesive layer, the elastomer X and the elastomer Y, and the blending ratio thereof are synonymous with those described in the temporary fixing adhesive of the present invention, and the preferred ranges are also the same. Moreover, you may mix | blend various additives etc. which were described in the place of the temporary fix | bonding adhesive agent of this invention also with a 2nd contact bonding layer.
 本発明の積層体の第四の実施形態は、第一~第三の実施形態において、他の層を有する態様である。他の層としては、離型層、剥離層あるいは分離層と呼ばれる層が例示される。剥離層としては、例えば、特開2014-212292号公報の段落0025~0055の記載を参酌でき、これらの内容は本明細書に組み込まれる。また、分離層としては、国際公開WO2013/065417号公報の段落0069~0124の記載を参酌でき、これらの内容は本明細書に組み込まれる。 The fourth embodiment of the laminate of the present invention is an aspect having other layers in the first to third embodiments. Examples of other layers include layers called release layers, release layers, or separation layers. As the release layer, for example, the description in paragraphs 0025 to 0055 of JP 2014-212292 A can be referred to, and the contents thereof are incorporated in the present specification. As the separation layer, the description in paragraphs 0069 to 0124 of International Publication No. WO2013 / 064417 can be referred to, and the contents thereof are incorporated in the present specification.
 基材は、デバイスウエハが好ましく用いられる。デバイスウエハは、公知のものを制限なく使用することができ、例えば、シリコン基板、化合物半導体基板などが挙げられる。化合物半導体基板の具体例としては、SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板、GaN基板などが挙げられる。
 デバイスウエハの表面には、機械構造や回路が形成されていてもよい。機械構造や回路が形成されたデバイスウエハとしては、例えば、MEMS(Micro Electro Mechanical Systems)、パワーデバイス、イメージセンサー、マイクロセンサー、発光ダイオード(LED)、光学デバイス、インターポーザー、埋め込み型デバイス、マイクロデバイスなどが挙げられる。
 デバイスウエハは、金属バンプ等の構造を有していることが好ましい。本発明によれば、表面にそのような構造を有しているデバイスウエハに対しても、安定して仮接着できるとともに、デバイスウエハに対する仮接着を容易に解除できる。構造の高さは、特に限定はないが、例えば、1~150μmが好ましく、5~100μmがより好ましい。
 機械的または化学的な処理を施す前のデバイスウエハの膜厚は、500μm以上が好ましく、600μm以上がより好ましく、700μm以上が更に好ましい。上限は、例えば、2000μm以下が好ましく、1500μm以下がより好ましい。
 機械的または化学的な処理を施して薄膜化した後のデバイスウエハの膜厚は、例えば、500μm未満が好ましく、400μm以下がより好ましく、300μm以下が更に好ましい。下限は、例えば、1μm以上が好ましく、5μm以上がより好ましい。
A device wafer is preferably used as the substrate. A known device wafer can be used without limitation, and examples thereof include a silicon substrate and a compound semiconductor substrate. Specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.
A mechanical structure or a circuit may be formed on the surface of the device wafer. Examples of device wafers on which mechanical structures and circuits are formed include MEMS (Micro Electro Mechanical Systems), power devices, image sensors, micro sensors, light emitting diodes (LEDs), optical devices, interposers, embedded devices, and micro devices. Etc.
The device wafer preferably has a structure such as a metal bump. According to the present invention, it is possible to stably temporarily bond even a device wafer having such a structure on the surface, and to easily release the temporary adhesion to the device wafer. The height of the structure is not particularly limited, but is preferably 1 to 150 μm, for example, and more preferably 5 to 100 μm.
The film thickness of the device wafer before the mechanical or chemical treatment is preferably 500 μm or more, more preferably 600 μm or more, and still more preferably 700 μm or more. For example, the upper limit is preferably 2000 μm or less, and more preferably 1500 μm or less.
For example, the film thickness of the device wafer after thinning by mechanical or chemical treatment is preferably less than 500 μm, more preferably 400 μm or less, and even more preferably 300 μm or less. For example, the lower limit is preferably 1 μm or more, and more preferably 5 μm or more.
 本発明の積層体において、支持体(キャリア支持体)としては、上述した接着性支持体で説明した支持体と同義であり、好ましい範囲も同様である。
 また、基材上に接着層3A、支持体上に接着層3Bをそれぞれ設け、接着させてもよい。この場合、接着層3Aと接着層3Bとは同じであっても異なっていてもよい。異なっている場合、シリコン原子を含有する化合物の種類を変えたり、あるいは親油基およびフッ素原子を含有する化合物などのその他添加剤の種類や添加量を変えることで、剥離選択性(基材界面と支持体界面の剥離選択性)や剥離力を適宜調整することができる。
 また、支持体と基材との間に、上述した本発明の接着シートを配置し、加熱圧着して製造することもできる。
In the laminate of the present invention, the support (carrier support) is synonymous with the support described in the adhesive support described above, and the preferred range is also the same.
Alternatively, the adhesive layer 3A may be provided on the base material, and the adhesive layer 3B may be provided on the support to be bonded. In this case, the adhesive layer 3A and the adhesive layer 3B may be the same or different. If they are different, change the type of compound containing silicon atoms, or change the type and amount of other additives such as compounds containing lipophilic groups and fluorine atoms. And the peeling selectivity at the interface between the support and the peeling force can be adjusted as appropriate.
Moreover, it can also manufacture by arrange | positioning the adhesive sheet of this invention mentioned above between a support body and a base material, and thermocompression-bonding.
 また、本発明の積層体は、支持体および基材の一方に、本発明の仮止め接着剤を用いて接着層を形成し、支持体および基材の他方に、本発明の仮止め接着剤、または、上述した他の仮止め接着剤を用いて接着層を形成し、支持体および基材の接着層を形成した面同士を加熱圧着して製造することもできる。この方法によれば、接着層同士を貼り合せるので、支持体と基材とを埋め込み性良く貼り合せることができる。 In the laminate of the present invention, the adhesive layer of the present invention is formed on one of the support and the substrate using the temporary adhesive of the present invention, and the temporary adhesive of the present invention is formed on the other of the support and the substrate. Alternatively, the adhesive layer can be formed by using the other temporary fixing adhesive described above, and the surfaces on which the support layer and the adhesive layer of the base material are formed can be thermocompression-bonded. According to this method, since the adhesive layers are bonded together, the support and the substrate can be bonded together with good embedding properties.
 さらにまた、本発明の積層体は、支持体および基材の一方に、本発明の仮止め接着剤と上述した他の仮止め接着剤を用いて、接着層3Aと接着層3Bとをそれぞれ1層以上含む接着層を形成し、接着層上に支持体および基材の他方を配置して、支持体と基材とを加熱圧着して製造することもできる。 Furthermore, in the laminate of the present invention, the adhesive layer 3 </ b> A and the adhesive layer 3 </ b> B are each one of the support and the base material using the temporary adhesive of the present invention and the other temporary adhesive described above. It can also be produced by forming an adhesive layer including at least one layer, placing the other of the support and the substrate on the adhesive layer, and thermocompression-bonding the support and the substrate.
<半導体装置の製造方法>
<<第一の実施形態>>
 以下、積層体を製造する工程を経た半導体装置の製造方法の一実施形態について、図3を合わせて参照しながら説明する。なお、本発明は、以下の実施形態に限定されるものではない。
 図3(A)~(E)は、それぞれ、支持体とデバイスウエハとの仮接着を説明する概略断面図(図3(A)、(B))、支持体に仮接着されたデバイスウエハが薄型化された状態(図3(C))、支持体とデバイスウエハを剥離した状態(図3(D))、デバイスウエハから接着層を除去した後の状態(図3(E))を示す概略断面図である。
<Method for Manufacturing Semiconductor Device>
<< First Embodiment >>
Hereinafter, an embodiment of a method of manufacturing a semiconductor device that has undergone a process of manufacturing a stacked body will be described with reference to FIG. In addition, this invention is not limited to the following embodiment.
3A to 3E are schematic cross-sectional views (FIGS. 3A and 3B) for explaining the temporary bonding between the support and the device wafer, respectively, and the device wafer temporarily bonded to the support. The thinned state (FIG. 3C), the support and the device wafer are peeled off (FIG. 3D), and the state after the adhesive layer is removed from the device wafer (FIG. 3E). It is a schematic sectional drawing.
 この実施形態では、図3(A)に示すように、先ず、支持体12に接着層11が設けられてなる接着性支持体100が準備される。
 接着層11は、実質的に溶剤を含まない態様であることが好ましい。
 デバイスウエハ60(基材)は、シリコン基板61の表面61aに複数のデバイスチップ62が設けられてなる。
 シリコン基板61の厚さは、例えば、200~1200μmが好ましい。デバイスチップ62は例えば金属構造体であることが好ましく、高さは10~100μmが好ましい。
 接着層11を形成させる過程で、支持体12やデバイスウエハ60の裏面などを溶剤で洗浄する工程を設けてもよい。具体的には、支持体12やデバイスウエハ60の端面および裏面に付着した接着層の残渣を、接着層が溶解する溶剤を用いて除去することで、装置の汚染を防ぐことができ、薄型化デバイスウエハのTTV(Total Thickness Variation)を低下させることができる。支持体12やデバイスウエハ60の裏面などを溶剤で洗浄する工程に用いる溶剤としては、前述の仮止め接着剤に含まれる溶剤を使用することができる。
In this embodiment, as shown in FIG. 3A, first, an adhesive support 100 in which an adhesive layer 11 is provided on a support 12 is prepared.
It is preferable that the adhesive layer 11 is an embodiment that does not substantially contain a solvent.
The device wafer 60 (base material) is formed by providing a plurality of device chips 62 on a surface 61 a of a silicon substrate 61.
The thickness of the silicon substrate 61 is preferably 200 to 1200 μm, for example. The device chip 62 is preferably a metal structure, for example, and the height is preferably 10 to 100 μm.
In the process of forming the adhesive layer 11, a step of cleaning the support 12 or the back surface of the device wafer 60 with a solvent may be provided. Specifically, by removing the residue of the adhesive layer adhering to the end surface and the back surface of the support 12 and the device wafer 60 using a solvent that dissolves the adhesive layer, the contamination of the apparatus can be prevented and the thickness can be reduced. The TTV (Total Thickness Variation) of the device wafer can be reduced. As the solvent used in the step of cleaning the support 12 or the back surface of the device wafer 60 with a solvent, the solvent contained in the above-described temporary fixing adhesive can be used.
 次いで、図3(B)に示す通り、接着性支持体100とデバイスウエハ60とを圧着させ、支持体12とデバイスウエハ60とを仮接着させる。
 接着層11は、デバイスチップ62を完全に覆っていることが好ましく、デバイスチップの高さがXμm、接着層の厚みをYμmの場合、「X+100≧Y>X」の関係を満たすことが好ましい。
 接着層11がデバイスチップ62を完全に被覆していることは、薄型デバイスウエハのTTV(Total Thickness Variation)をより低下したい場合(すなわち、薄型デバイスウエハの平坦性をより向上させたい場合)に有効である。
 すなわち、デバイスウエハを薄型化する際において、複数のデバイスチップ62を接着層11によって保護することにより、支持体12との接触面において、凹凸形状をほとんど無くすことが可能である。よって、このように支持した状態で薄型化しても、複数のデバイスチップ62に由来する形状が、薄型デバイスウエハの裏面61b1に転写されるおそれは低減され、その結果、最終的に得られる薄型デバイスウエハのTTVをより低下することができる。
Next, as shown in FIG. 3B, the adhesive support 100 and the device wafer 60 are pressure-bonded, and the support 12 and the device wafer 60 are temporarily bonded.
The adhesive layer 11 preferably completely covers the device chip 62, and preferably satisfies the relationship of “X + 100 ≧ Y> X” when the height of the device chip is X μm and the thickness of the adhesive layer is Y μm.
The fact that the adhesive layer 11 completely covers the device chip 62 is effective when it is desired to further reduce the TTV (Total Thickness Variation) of the thin device wafer (that is, when the flatness of the thin device wafer is to be further improved). It is.
That is, when the device wafer is thinned, the plurality of device chips 62 are protected by the adhesive layer 11, so that it is possible to almost eliminate the uneven shape on the contact surface with the support 12. Therefore, even if the thickness is reduced in such a supported state, the possibility that the shape derived from the plurality of device chips 62 is transferred to the back surface 61b1 of the thin device wafer is reduced, and as a result, the thin device finally obtained The TTV of the wafer can be further reduced.
 次いで、図3(C)に示すように、シリコン基板61の裏面61bに対して、機械的または化学的な処理(特に限定されないが、例えば、グライディングや化学機械研磨(CMP)等の薄膜化処理、化学気相成長(CVD)や物理気相成長(PVD)などの高温・真空下での処理、有機溶剤、酸性処理液や塩基性処理液などの薬品を用いた処理、めっき処理、活性光線の照射、加熱・冷却処理など)を施して、図3(C)に示すように、シリコン基板61の厚さを薄くし(例えば、平均厚さ500μm未満であることが好ましく、1~200μmであることがより好ましい)、薄型デバイスウエハ60aを得る。
 デバイスウエハを薄型化した後、高温・真空下での処理を行う前の段階で、デバイスウエハの基材面の面積よりも外側にはみ出した接着層を溶剤で洗浄する工程を設けてもよい。具体的には、デバイスウエハを薄型化した後、はみ出した接着層を、接着層が溶解する溶剤を用いて除去することで、高温・真空下での処理が接着層に直接施されることによる接着層の変形、変質を防ぐことができる。デバイスウエハの基材面の面積よりも外側にはみ出した接着層を溶剤で洗浄する工程に用いる溶剤としては、上記仮止め接着剤に含まれる溶剤を使用することができる。
 すなわち、本発明では、接着層の膜面の面積は、支持体の基材面の面積よりも小さいことが好ましい。また、本発明では、支持体の基材面の直径をCμm、デバイスウエハの基材面の直径をDμm、接着層の膜面の直径をTμmとしたとき、(C‐200)≧T≧Dを満たすことがより好ましい。さらに、支持体の基材面の直径をCμm、デバイスウエハの基材面の直径をDμm、接着層の支持体と接している側の膜面の直径をTCμm、接着層のデバイスウエハと接している側の膜面の直径をTDμmとしたとき、(C‐200)≧TC>TD≧Dを満たすことが好ましい。このような構成とすることにより、高温・真空下での処理が接着層に直接施されることによる接着層の変形、変質をより抑制することができる。
 尚、接着層の膜面の面積とは、支持体に対し垂直な方向から見たときの面積をいい、膜面の凹凸は考えないものとする。デバイスウエハの基材面についても同様である。すなわち、ここでいう、デバイスウエハの基材面とは、例えば、図3の61a面に対応する面である。接着層の膜面等の直径についても、同様に考える。
 また、接着層の膜面の直径Tについて、接着層の支持体と接している側の膜面の直径をTCμm、接着層のデバイスウエハと接している側の膜面の直径をTDμmとしたとき、T=(TC+TD)/2とする。支持体の基材面の直径およびデバイスウエハの基材面の直径は、接着層と接している側の表面の直径をいう。
 なお、支持体等について、「直径」と規定しているが、支持体等が、数学的な意味で円形(正円)であることを必須とするものではなく、概ね円形であればよい。正円でない場合、同じ面積の正円に換算した時の直径をもって、上記直径とする。
 また、機械的または化学的な処理として、薄膜化処理の後に、薄型デバイスウエハ60aの裏面61b1からシリコン基板を貫通する貫通孔(図示せず)を形成し、この貫通孔内にシリコン貫通電極(図示せず)を形成する処理を行ってもよい。
 支持体12とデバイスウエハ60とを仮接着した後、剥離するまでの間に加熱処理を行っても良い。加熱処理の一例として、機械的または化学的な処理において、加熱処理を行うことが挙げられる。
 加熱処理における最高到達温度は80~400℃が好ましく、130℃~400℃がより好ましく、180℃~350℃がさらに好ましい。加熱処理における最高到達温度は接着層の分解温度よりも低い温度とすることが好ましい。加熱処理は、最高到達温度での30秒~30分の加熱であることが好ましく、最高到達温度での1分~10分の加熱であることがより好ましい。
Next, as shown in FIG. 3C, the back surface 61b of the silicon substrate 61 is subjected to mechanical or chemical treatment (though not particularly limited, for example, thinning treatment such as grinding or chemical mechanical polishing (CMP)). , Chemical vapor deposition (CVD), physical vapor deposition (PVD) and other high-temperature / vacuum treatments, treatments using chemicals such as organic solvents, acidic treatment solutions and basic treatment solutions, plating treatments, actinic rays 3) to reduce the thickness of the silicon substrate 61 (for example, the average thickness is preferably less than 500 μm, preferably 1 to 200 μm). More preferably, a thin device wafer 60a is obtained.
After thinning the device wafer, it may be possible to provide a step of cleaning the adhesive layer that protrudes outside the area of the substrate surface of the device wafer with a solvent at a stage before performing the treatment under high temperature and vacuum. Specifically, after thinning the device wafer, the protruding adhesive layer is removed using a solvent that dissolves the adhesive layer, whereby the treatment under high temperature and vacuum is directly applied to the adhesive layer. Deformation and alteration of the adhesive layer can be prevented. As the solvent used in the step of washing the adhesive layer protruding outside the area of the substrate surface of the device wafer with a solvent, the solvent contained in the temporary adhesive can be used.
That is, in the present invention, the area of the film surface of the adhesive layer is preferably smaller than the area of the substrate surface of the support. In the present invention, when the diameter of the substrate surface of the support is C μm, the diameter of the substrate surface of the device wafer is D μm, and the diameter of the film surface of the adhesive layer is T μm, (C-200) ≧ T ≧ D It is more preferable to satisfy. Furthermore, the diameter of the substrate surface of the support is C μm, the diameter of the substrate surface of the device wafer is D μm, the diameter of the film surface in contact with the support of the adhesive layer is T C μm, and the device wafer of the adhesive layer is When the diameter of the film surface on the side in contact is T D μm, it is preferable that (C-200) ≧ T C > T D ≧ D. By setting it as such a structure, a deformation | transformation and a quality change of the contact bonding layer by the process under high temperature and a vacuum being directly performed to a contact bonding layer can be suppressed more.
The area of the film surface of the adhesive layer refers to the area when viewed from the direction perpendicular to the support, and the film surface is not considered uneven. The same applies to the substrate surface of the device wafer. That is, the substrate surface of the device wafer referred to here is, for example, a surface corresponding to the surface 61a in FIG. The same applies to the diameter of the adhesive layer such as the film surface.
Further, regarding the diameter T of the film surface of the adhesive layer, the diameter of the film surface on the side in contact with the support of the adhesive layer is T C μm, and the diameter of the film surface on the side of the adhesive layer in contact with the device wafer is T D When μm, T = (T C + T D ) / 2. The diameter of the substrate surface of the support and the diameter of the substrate surface of the device wafer refer to the diameter of the surface in contact with the adhesive layer.
In addition, although it is prescribed | regulated as a "diameter" about a support body etc., it is not essential that a support body etc. are circular (perfect circle) in a mathematical meaning, and what is necessary is just circular. If it is not a perfect circle, the diameter when converted to a perfect circle of the same area is taken as the diameter.
Further, as a mechanical or chemical treatment, a through hole (not shown) penetrating the silicon substrate is formed from the back surface 61b1 of the thin device wafer 60a after the thinning process, and a silicon through electrode ( A process of forming (not shown) may be performed.
Heat treatment may be performed after the support 12 and the device wafer 60 are temporarily bonded to each other and then peeled off. As an example of the heat treatment, heat treatment may be performed in a mechanical or chemical treatment.
The maximum temperature achieved in the heat treatment is preferably 80 to 400 ° C, more preferably 130 ° C to 400 ° C, and still more preferably 180 ° C to 350 ° C. The highest temperature achieved in the heat treatment is preferably lower than the decomposition temperature of the adhesive layer. The heat treatment is preferably performed for 30 seconds to 30 minutes at the highest temperature, and more preferably for 1 minute to 10 minutes at the highest temperature.
 次いで、図3(D)に示すように、支持体12を、薄型デバイスウエハ60aから脱離させる。脱離の方法は特に限定されるものではないが、何ら処理することなく薄型デバイスウエハ60aの端部から薄型デバイスウエハ60aに対して垂直方向に引き上げて剥離することが好ましい。このとき、剥離界面は、支持体12と接着層11の界面で剥離されることが好ましい。この場合、支持体12と接着層11の界面の剥離強度A、デバイスウエハ表面61aと接着層11の剥離強度Bは、以下の式を満たすことが好ましい。
 A<B   ・・・・式(1)
Next, as shown in FIG. 3D, the support 12 is detached from the thin device wafer 60a. The method of detachment is not particularly limited, but it is preferable that the separation is performed by pulling up from the end of the thin device wafer 60a in a direction perpendicular to the thin device wafer 60a without any treatment. At this time, the peeling interface is preferably peeled off at the interface between the support 12 and the adhesive layer 11. In this case, the peel strength A at the interface between the support 12 and the adhesive layer 11 and the peel strength B between the device wafer surface 61a and the adhesive layer 11 preferably satisfy the following expressions.
A <B Formula (1)
 また、接着層11を後述する剥離液に接触させ、その後、必要に応じて、支持体12に対して薄型デバイスウエハ60aを摺動させた後に、薄型デバイスウエハ60aの端部からデバイスウエハに対して垂直方向に引き上げて剥離することもできる。 Further, the adhesive layer 11 is brought into contact with a stripping solution described later, and then, if necessary, the thin device wafer 60a is slid with respect to the support 12 and then the end of the thin device wafer 60a is applied to the device wafer. It can also be peeled off by pulling up in the vertical direction.
<剥離液>
 以下、剥離液について詳細に説明する。
 剥離液としては、水および、溶剤(有機溶剤)を使用することができる。
 また、剥離液としては、接着層11を溶解する有機溶剤が好ましい。有機溶剤としては、例えば、脂肪族炭化水素類(ヘキサン、ヘプタン、アイソパーE、H、G(エッソ化学(株)製)、リモネン、パラ-メンタン、ノナン、デカン、ドデカン、デカリン等)、芳香族炭化水素類(トルエン、キシレン、アニソール、メシチレン、エチルベンゼン、プロピルベンゼン、クメン、n-ブチルベンゼン、sec-ブチルベンゼン、イソブチルベンゼン、tert-ブチルベンゼン、アミルベンゼン、イソアミルベンゼン、(2,2-ジメチルプロピル)ベンゼン、1-フェニルへキサン、1-フェニルヘプタン、1-フェニルオクタン、1-フェニルノナン、1-フェニルデカン、シクロプロピルベンゼン、シクロヘキシルベンゼン、2-エチルトルエン、1,2-ジエチルベンゼン、オルト-シメン、インダン、1,2,3,4-テトラヒドロナフタレン、3-エチルトルエン、メタ-シメン、1,3-ジイソプロピルベンゼン、4-エチルトルエン、1,4-ジエチルベンゼン、パラ-シメン、1,4-ジイソプロピルベンゼン、4-tert-ブチルトルエン、1,4-ジ-tert-ブチルベンゼン、1,3-ジエチルベンゼン、1,2,3-トリメチルベンゼン、1,2,4-トリメチルベンゼン、4-tert-ブチル-オルト-キシレン、1,2,4-トリエチルベンゼン、1,3,5-トリエチルベンゼン、1,3,5-トリイソプロピルベンゼン、5-tert-ブチル-メタ-キシレン、3,5-ジ-tert-ブチルトルエン、1,2,3,5-テトラメチルベンゼン、1,2,4,5-テトラメチルベンゼン、ペンタメチルベンゼン、等)、ハロゲン化炭化水素(メチレンジクロライド、エチレンジクロライド、トリクレン、モノクロルベンゼン等)、極性溶剤が挙げられる。極性溶剤としては特に、アルコール類(メタノール、エタノール、プロパノール、イソプロパノール、1-ブタノール、1-ペンタノール、1-ヘキサノール、1-ヘプタノール、1-オクタノール、2-オクタノール、2-エチル-1-ヘキサノール、1-ノナノール、1-デカノール、ベンジルアルコール、エチレングリコールモノメチルエーテル、2-エトキシエタノール、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノヘキシルエーテル、トリエチレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノメチルエーテル、ポリエチレングリコールモノメチルエーテル、ポリプロピレングリコール、テトラエチレングリコール、エチレングリコールモノブチルエーテル、エチレングリコールモノベンジルエーテル、エチレングリコールモノフェニルエーテル、プロピレングリコールモノフェニルエーテル、メチルフェニルカルビノール、n-アミルアルコール、メチルアミルアルコール等)、ケトン類(アセトン、メチルエチルケトン、エチルブチルケトン、シクロヘキサノン等)、エステル類(酢酸エチル、酢酸プロピル、酢酸ブチル、酢酸アミル、酢酸ベンジル、乳酸メチル、乳酸ブチル、エチレングリコールモノブチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコールアセテート、ジエチルフタレート、レブリン酸ブチル等)、その他(トリエチルフォスフェート、トリクレジルフォスフェート、N-フェニルエタノールアミン、N-フェニルジエタノールアミン、N-メチルジエタノールアミン、N-エチルジエタノールアミン、4-(2-ヒドロキシエチル)モルホリン、N,N-ジメチルアセトアミド、N-メチルピロリドン等)等が挙げられる。
<Release solution>
Hereinafter, the stripping solution will be described in detail.
As the stripping solution, water and a solvent (organic solvent) can be used.
Moreover, as a peeling liquid, the organic solvent which melt | dissolves the contact bonding layer 11 is preferable. Examples of the organic solvent include aliphatic hydrocarbons (hexane, heptane, isoper E, H, G (manufactured by Esso Chemical Co., Ltd.), limonene, para-menthane, nonane, decane, dodecane, decalin, etc.), aromatic Hydrocarbons (toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene, n-butylbenzene, sec-butylbenzene, isobutylbenzene, tert-butylbenzene, amylbenzene, isoamylbenzene, (2,2-dimethylpropyl ) Benzene, 1-phenylhexane, 1-phenylheptane, 1-phenyloctane, 1-phenylnonane, 1-phenyldecane, cyclopropylbenzene, cyclohexylbenzene, 2-ethyltoluene, 1,2-diethylbenzene, ortho-cymene , Indan 1,2,3,4-tetrahydronaphthalene, 3-ethyltoluene, meta-cymene, 1,3-diisopropylbenzene, 4-ethyltoluene, 1,4-diethylbenzene, para-cymene, 1,4-diisopropylbenzene, 4 -Tert-butyltoluene, 1,4-di-tert-butylbenzene, 1,3-diethylbenzene, 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 4-tert-butyl-ortho-xylene 1,2,4-triethylbenzene, 1,3,5-triethylbenzene, 1,3,5-triisopropylbenzene, 5-tert-butyl-meta-xylene, 3,5-di-tert-butyltoluene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, pentamethylbenzene Zen, etc.), halogenated hydrocarbons (methylene dichloride, ethylene dichloride, trichlorethylene, monochlorobenzene, etc.), polar solvents. Particularly polar solvents include alcohols (methanol, ethanol, propanol, isopropanol, 1-butanol, 1-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 2-octanol, 2-ethyl-1-hexanol, 1-nonanol, 1-decanol, benzyl alcohol, ethylene glycol monomethyl ether, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol Monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl Ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, propylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, etc.), ketones (acetone, methyl ethyl ketone, ethyl butyl ketone, cyclohexanone, etc.) Esters (ethyl acetate, propyl acetate, butyl acetate, amyl acetate, benzyl acetate, methyl lactate, butyl lactate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, diethylene glycol acetate, diethyl phthalate, butyl levulinate, etc.) (Triethyl phosphate, tricresyl phosphate, N-phenylethanolamine, N-phenyl Le diethanolamine, N- methyldiethanolamine, N- ethyldiethanolamine, 4- (2-hydroxyethyl) morpholine, N, N- dimethylacetamide, N- methylpyrrolidone and the like) and the like.
 さらに、剥離性の観点から、剥離液は、アルカリ、酸、および界面活性剤を含んでいても良い。これらの成分を配合する場合、配合量は、それぞれ、剥離液の0.1~5.0質量%であることが好ましい。
 さらに剥離性の観点から、2種以上の有機溶剤および水、2種以上のアルカリ、酸および界面活性剤を混合する形態も好ましい。
Furthermore, from the viewpoint of peelability, the stripping solution may contain an alkali, an acid, and a surfactant. When these components are blended, the blending amount is preferably 0.1 to 5.0% by mass of the stripping solution.
Further, from the viewpoint of peelability, a form in which two or more organic solvents and water, two or more alkalis, an acid, and a surfactant are mixed is also preferable.
 アルカリとしては、例えば、第三リン酸ナトリウム、第三リン酸カリウム、第三リン酸アンモニウム、第二リン酸ナトリウム、第二リン酸カリウム、第二リン酸アンモニウム、炭酸ナトリウム、炭酸カリウム、炭酸アンモニウム、炭酸水素ナトリウム、炭酸水素カリウム、炭酸水素アンモニウム、ホウ酸ナトリウム、ホウ酸カリウム、ホウ酸アンモニウム、水酸化ナトリウム、水酸化アンモニウム、水酸化カリウムおよび水酸化リチウムなどの無機アルカリ剤や、モノメチルアミン、ジメチルアミン、トリメチルアミン、モノエチルアミン、ジエチルアミン、トリエチルアミン、モノイソプロピルアミン、ジイソプロピルアミン、トリイソプロピルアミン、n-ブチルアミン、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、モノイソプロパノールアミン、ジイソプロパノールアミン、エチレンイミン、エチレンジアミン、ピリジン、テトラメチルアンモニウムヒドロキシドなどの有機アルカリ剤を使用することができる。これらのアルカリ剤は、単独で、若しくは2種以上を組み合わせて用いることができる。 Examples of the alkali include tribasic sodium phosphate, tribasic potassium phosphate, tribasic ammonium phosphate, dibasic sodium phosphate, dibasic potassium phosphate, dibasic ammonium phosphate, sodium carbonate, potassium carbonate, and ammonium carbonate. , Inorganic alkali agents such as sodium bicarbonate, potassium bicarbonate, ammonium bicarbonate, sodium borate, potassium borate, ammonium borate, sodium hydroxide, ammonium hydroxide, potassium hydroxide and lithium hydroxide, monomethylamine, Dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanol Min, monoisopropanolamine, diisopropanolamine, ethyleneimine, ethylenediamine, pyridine, may be used an organic alkali agent such as tetramethylammonium hydroxide. These alkali agents can be used alone or in combination of two or more.
 酸としては、ハロゲン化水素、硫酸、硝酸、リン酸、ホウ酸などの無機酸や、メタンスルホン酸、エタンスルホン酸、ベンゼンスルホン酸、パラ-トルエンスルホン酸、トリフルオロメタンスルホン酸、酢酸、クエン酸、ギ酸、グルコン酸、乳酸、シュウ酸、酒石酸などの有機酸を使用することができる。 Acids include inorganic acids such as hydrogen halides, sulfuric acid, nitric acid, phosphoric acid, boric acid, methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, para-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid Organic acids such as formic acid, gluconic acid, lactic acid, oxalic acid and tartaric acid can be used.
 界面活性剤としては、アニオン系、カチオン系、ノニオン系、両性イオン系の界面活性剤を使用することができる。この場合、界面活性剤の含有量は、アルカリ水溶液の全量に対して1~20質量%であることが好ましく、1~10質量%であることがより好ましい。
 界面活性剤の含有量を上記した範囲内とすることにより、接着層11と薄型デバイスウエハ60aとの剥離性をより向上できる傾向となる。
As the surfactant, an anionic, cationic, nonionic or zwitterionic surfactant can be used. In this case, the content of the surfactant is preferably 1 to 20% by mass and more preferably 1 to 10% by mass with respect to the total amount of the alkaline aqueous solution.
By setting the content of the surfactant within the above-described range, the peelability between the adhesive layer 11 and the thin device wafer 60a tends to be further improved.
 アニオン系界面活性剤としては、特に限定されないが、脂肪酸塩類、アビエチン酸塩類、ヒドロキシアルカンスルホン酸塩類、アルカンスルホン酸塩類、ジアルキルスルホコハク酸塩類、直鎖アルキルベンゼンスルホン酸塩類、分岐鎖アルキルベンゼンスルホン酸塩類、アルキルナフタレンスルホン酸塩類、アルキルジフェニルエーテル(ジ)スルホン酸塩類、アルキルフェノキシポリオキシエチレンアルキルスルホン酸塩類、ポリオキシエチレンアルキルスルホフェニルエーテル塩類、N-アルキル-N-オレイルタウリンナトリウム類、N-アルキルスルホコハク酸モノアミド二ナトリウム塩類、石油スルホン酸塩類、硫酸化ヒマシ油、硫酸化牛脂油、脂肪酸アルキルエステルの硫酸エステル塩類、アルキル硫酸エステル塩類、ポリオキシエチレンアルキルエーテル硫酸エステル塩類、脂肪酸モノグリセリド硫酸エステル塩類、ポリオキシエチレンアルキルフェニルエーテル硫酸エステル塩類、ポリオキシエチレンスチリルフェニルエーテル硫酸エステル塩類、アルキル燐酸エステル塩類、ポリオキシエチレンアルキルエーテル燐酸エステル塩類、ポリオキシエチレンアルキルフェニルエーテル燐酸エステル塩類、スチレン-無水マレイン酸共重合物の部分けん化物類、オレフィン-無水マレイン酸共重合物の部分けん化物類、ナフタレンスルホン酸塩ホルマリン縮合物類等が挙げられる。この中で、アルキルベンゼンスルホン酸塩類、アルキルナフタレンスルホン酸塩類、アルキルジフェニルエーテル(ジ)スルホン酸塩類が特に好ましく用いられる。 Examples of the anionic surfactant include, but are not limited to, fatty acid salts, abietic acid salts, hydroxyalkane sulfonic acid salts, alkane sulfonic acid salts, dialkyl sulfosuccinic acid salts, linear alkyl benzene sulfonic acid salts, branched alkyl benzene sulfonic acid salts, Alkylnaphthalene sulfonates, alkyl diphenyl ether (di) sulfonates, alkylphenoxy polyoxyethylene alkyl sulfonates, polyoxyethylene alkyl sulfophenyl ether salts, N-alkyl-N-oleyl taurine sodium, N-alkyl sulfosuccinic acid Monoamide disodium salts, petroleum sulfonates, sulfated castor oil, sulfated beef oil, sulfate esters of fatty acid alkyl esters, alkyl sulfate esters, polio Siethylene alkyl ether sulfates, fatty acid monoglyceride sulfates, polyoxyethylene alkylphenyl ether sulfates, polyoxyethylene styryl phenyl ether sulfates, alkyl phosphates, polyoxyethylene alkyl ether phosphates, polyoxy Examples thereof include ethylene alkylphenyl ether phosphoric acid ester salts, partial saponification products of styrene-maleic anhydride copolymer, partial saponification products of olefin-maleic anhydride copolymer, and naphthalene sulfonate formalin condensates. Of these, alkylbenzene sulfonates, alkylnaphthalene sulfonates, and alkyl diphenyl ether (di) sulfonates are particularly preferably used.
 カチオン系界面活性剤としては、特に限定されないが、従来公知のものを用いることができる。例えば、アルキルアミン塩類、第四級アンモニウム塩類、アルキルイミダゾリニウム塩、ポリオキシエチレンアルキルアミン塩類、ポリエチレンポリアミン誘導体が挙げられる。 The cationic surfactant is not particularly limited, and conventionally known cationic surfactants can be used. Examples thereof include alkylamine salts, quaternary ammonium salts, alkyl imidazolinium salts, polyoxyethylene alkylamine salts, and polyethylene polyamine derivatives.
 ノニオン系界面活性剤としては、特に限定されないが、ポリエチレングリコール型の高級アルコールエチレンオキサイド付加物、アルキルフェノールエチレンオキサイド付加物、アルキルナフトールエチレンオキサイド付加物、フェノールエチレンオキサイド付加物、ナフトールエチレンオキサイド付加物、脂肪酸エチレンオキサイド付加物、多価アルコール脂肪酸エステルエチレンオキサイド付加物、高級アルキルアミンエチレンオキサイド付加物、脂肪酸アミドエチレンオキサイド付加物、油脂のエチレンオキサイド付加物、ポリプロピレングリコールエチレンオキサイド付加物、ジメチルシロキサン-エチレンオキサイドブロックコポリマー、ジメチルシロキサン-(プロピレンオキサイド-エチレンオキサイド)ブロックコポリマー、多価アルコール型のグリセロールの脂肪酸エステル、ペンタエリスリトールの脂肪酸エステル、ソルビトールおよびソルビタンの脂肪酸エステル、ショ糖の脂肪酸エステル、多価アルコールのアルキルエーテル、アルカノールアミン類の脂肪酸アミド等が挙げられる。この中で、芳香環とエチレンオキサイド鎖を有するものが好ましく、アルキル置換または無置換のフェノールエチレンオキサイド付加物またはアルキル置換または無置換のナフトールエチレンオキサイド付加物がより好ましい。 The nonionic surfactant is not particularly limited, but is a polyethylene glycol type higher alcohol ethylene oxide adduct, alkylphenol ethylene oxide adduct, alkyl naphthol ethylene oxide adduct, phenol ethylene oxide adduct, naphthol ethylene oxide adduct, fatty acid. Ethylene oxide adduct, polyhydric alcohol fatty acid ester ethylene oxide adduct, higher alkylamine ethylene oxide adduct, fatty acid amide ethylene oxide adduct, fat and oil ethylene oxide adduct, polypropylene glycol ethylene oxide adduct, dimethylsiloxane-ethylene oxide block Copolymer, dimethylsiloxane- (propylene oxide-ethylene oxide) block copolymer , Fatty acid esters of polyhydric alcohol type glycerol, fatty acid esters of pentaerythritol, fatty acid esters of sorbitol and sorbitan, fatty acid esters of sucrose, alkyl ethers of polyhydric alcohols, fatty acid amides of alkanolamines. Among these, those having an aromatic ring and an ethylene oxide chain are preferable, and an alkyl-substituted or unsubstituted phenol ethylene oxide adduct or an alkyl-substituted or unsubstituted naphthol ethylene oxide adduct is more preferable.
 両性イオン系界面活性剤としては、特に限定されないが、アルキルジメチルアミンオキシドなどのアミンオキシド系、アルキルベタインなどのベタイン系、アルキルアミノ脂肪酸ナトリウムなどのアミノ酸系が挙げられる。特に、置換基を有してもよいアルキルジメチルアミンオキシド、置換基を有してもよいアルキルカルボキシベタイン、置換基を有してもよいアルキルスルホベタインが好ましく用いられる。具体的には、特開2008-203359号公報の段落番号〔0256〕の式(2)で示される化合物、特開2008-276166号公報の段落番号〔0028〕の式(I)、式(II)、式(VI)で示される化合物、特開2009-47927号公報の段落番号〔0022〕~〔0029〕で示される化合物を用いることができる。 Zwitterionic surfactants include, but are not limited to, amine oxides such as alkyldimethylamine oxide, betaines such as alkylbetaines, and amino acids such as sodium alkylamino fatty acids. In particular, alkyldimethylamine oxide which may have a substituent, alkylcarboxybetaine which may have a substituent, and alkylsulfobetaine which may have a substituent are preferably used. Specifically, the compound represented by the formula (2) in paragraph [0256] of JP-A-2008-203359, the formula (I) and the formula (II) in paragraph [0028] of JP-A-2008-276166 are disclosed. ), A compound represented by the formula (VI), and compounds represented by paragraph numbers [0022] to [0029] of JP-A-2009-47927 can be used.
 さらに必要に応じ、剥離液は消泡剤および硬水軟化剤のような添加剤を含有することもできる。 Further, if necessary, the stripping solution can contain additives such as an antifoaming agent and a hard water softening agent.
 そして、図3(E)に示すように、薄型デバイスウエハ60aから接着層11を除去することにより、薄型デバイスウエハを得ることができる。
 接着層11の除去方法は、例えば、接着層をフィルム状のまま剥離除去(機械剥離)する方法、接着層を剥離液で膨潤させた後に剥離除去する方法、接着層に剥離液を噴射して破壊除去する方法、接着層を剥離液に溶解させて溶解除去する方法、接着層を活性光線、放射線の照射または加熱により分解、気化して除去する方法などが挙げられる。接着層をフィルム状のまま剥離除去する方法、接着層を水溶液または有機溶剤に溶解させて溶解除去する方法が好ましく使用できる。有機溶剤としては、上述した剥離液で説明した有機溶剤を使用することができる。溶剤の使用量削減の観点からは、フィルム状のまま除去することが好ましい。また、デバイスウエハ表面のダメージ低減の観点からは、溶解除去が好ましい。
 フィルム状のまま除去するためには、デバイスウエハ表面61aと接着層11の剥離強度Bが以下の式(2)を満たすことが好ましい。
 B≦4N/cm   ・・・・式(2)
Then, as shown in FIG. 3E, the thin device wafer can be obtained by removing the adhesive layer 11 from the thin device wafer 60a.
The method for removing the adhesive layer 11 includes, for example, a method of peeling and removing (mechanical peeling) the adhesive layer in the form of a film, a method of peeling and removing the adhesive layer after swelling with a peeling liquid, and spraying the peeling liquid onto the adhesive layer. Examples thereof include a method for destructive removal, a method for dissolving and removing the adhesive layer by dissolving it in a peeling solution, and a method for removing the adhesive layer by decomposition and vaporization by irradiation with actinic rays and radiation or heating. A method of peeling and removing the adhesive layer in the form of a film and a method of dissolving and removing the adhesive layer in an aqueous solution or an organic solvent can be preferably used. As an organic solvent, the organic solvent demonstrated with the stripping solution mentioned above can be used. From the viewpoint of reducing the amount of solvent used, it is preferable to remove the film as it is. Further, from the viewpoint of reducing damage on the surface of the device wafer, dissolution and removal are preferable.
In order to remove the film as it is, the peel strength B between the device wafer surface 61a and the adhesive layer 11 preferably satisfies the following formula (2).
B ≦ 4N / cm ・ ・ ・ ・ Formula (2)
 支持体12と接着層11の界面の剥離強度をA、デバイスウエハ表面61aと接着層11の剥離強度Bとすると、上述した式(1)および(2)をともに満たすことにより、支持体12を薄型デバイスウエハ60aから剥離する際に、何ら処理することなく薄型デバイスウエハ60aの端部からデバイスウエハに対して垂直方向に引き上げて剥離することができ、かつ、デバイスウエハ表面61a上の接着層11を、フィルム状のまま除去することができる。
 支持体12を薄型デバイスウエハ60aから脱離した後、必要に応じて、薄型デバイスウエハ60aに対して、種々の公知の処理を施し、薄型デバイスウエハ60aを有する半導体装置を製造する。
Assuming that the peel strength at the interface between the support 12 and the adhesive layer 11 is A and the peel strength B between the device wafer surface 61a and the adhesive layer 11, both the above-described equations (1) and (2) are satisfied. When peeling from the thin device wafer 60a, the edge of the thin device wafer 60a can be pulled up in a direction perpendicular to the device wafer without any treatment, and the adhesive layer 11 on the device wafer surface 61a can be peeled off. Can be removed in the form of a film.
After the support 12 is detached from the thin device wafer 60a, various known processes are performed on the thin device wafer 60a as necessary to manufacture a semiconductor device having the thin device wafer 60a.
 また、支持体に接着層が付着している場合は、接着層を除去することにより、支持体を再生することができる。接着層を除去する方法としては、フィルム状のままでの剥離、ブラシ、超音波、氷粒子、エアロゾルの吹付けにより物理的に除去する方法、水溶液または有機溶剤に溶解させて溶解除去する方法、活性光線、放射線、熱の照射により分解、気化させる方法などの化学的に除去する方法が挙げられるが、支持体に応じて、従来既知の洗浄方法を利用することができる。
 例えば、支持体としてシリコン基板を使用した場合、従来既知のシリコンウエハの洗浄方法を使用することができる。例えば化学的に除去する場合に使用できる水溶液または有機溶剤としては、強酸、強塩基、強酸化剤、またはそれらの混合物が上げられ、具体的には、硫酸、塩酸、フッ酸、硝酸、有機酸などの酸類、テトラメチルアンモニウム、アンモニア、有機塩基などの塩基類、過酸化水素などの酸化剤、またはアンモニアと過酸化水素の混合物、塩酸と過酸化水素水の混合物、硫酸と過酸化水素水の混合物、フッ酸と過酸化水素水の混合物、フッ酸とフッ化アンモニウムとの混合物などが挙げられる。
Further, when the adhesive layer is attached to the support, the support can be regenerated by removing the adhesive layer. As a method of removing the adhesive layer, peeling in the form of a film, a method of physically removing by brush, ultrasonic waves, ice particles, aerosol spraying, a method of dissolving and removing by dissolving in an aqueous solution or an organic solvent, A chemical removal method such as a method of decomposing or vaporizing by irradiation with actinic rays, radiation, or heat can be mentioned, and conventionally known cleaning methods can be used depending on the support.
For example, when a silicon substrate is used as the support, a conventionally known silicon wafer cleaning method can be used. For example, examples of the aqueous solution or organic solvent that can be used for chemical removal include strong acids, strong bases, strong oxidants, and mixtures thereof. Specifically, sulfuric acid, hydrochloric acid, hydrofluoric acid, nitric acid, organic acids Acids such as tetramethylammonium, ammonia, organic bases, oxidizing agents such as hydrogen peroxide, or a mixture of ammonia and hydrogen peroxide, a mixture of hydrochloric acid and hydrogen peroxide, sulfuric acid and hydrogen peroxide Examples thereof include a mixture, a mixture of hydrofluoric acid and hydrogen peroxide, a mixture of hydrofluoric acid and ammonium fluoride.
 再生した支持体を使った場合の接着性の観点から、支持体洗浄液を用いることが好ましい。
 支持体洗浄液は、pKaが0未満の酸(強酸)と過酸化水素を含んでいることが好ましい。pKaが0未満の酸としては、ヨウ化水素、過塩素酸、臭化水素、塩化水素、硝酸、硫酸などの無機酸、又はアルキルスルホン酸、アリールスルホン酸などの有機酸から選択される。支持体上の接着層の洗浄性の観点から無機酸であることが好ましく、硫酸が特に好ましい。
From the viewpoint of adhesiveness when the regenerated support is used, it is preferable to use a support cleaning liquid.
The support cleaning liquid preferably contains an acid (strong acid) having a pKa of less than 0 and hydrogen peroxide. The acid having a pKa of less than 0 is selected from inorganic acids such as hydrogen iodide, perchloric acid, hydrogen bromide, hydrogen chloride, nitric acid and sulfuric acid, or organic acids such as alkylsulfonic acid and arylsulfonic acid. From the viewpoint of detergency of the adhesive layer on the support, an inorganic acid is preferable, and sulfuric acid is particularly preferable.
 過酸化水素としては、30質量%過酸化水素水が好ましく使用でき、上記強酸と30質量%過酸化水素水との混合比は、質量比で1:10~100:1が好ましく、1:1~10:1がより好ましく、3:1~5:1が特に好ましい。 As the hydrogen peroxide, 30% by mass hydrogen peroxide water can be preferably used, and the mixing ratio of the strong acid and 30% by mass hydrogen peroxide water is preferably 1:10 to 100: 1 in terms of mass ratio. ˜10: 1 is more preferred, and 3: 1 to 5: 1 is particularly preferred.
<<第二の実施形態>>
 積層体を製造する工程を経た半導体の製造方法の第二の実施形態について、図4を合わせて参照しながら説明する。上述した第一の実施形態と同一箇所は、同一符号を付してその説明を省略する。
 図4(A)~(E)は、それぞれ、支持体とデバイスウエハとの仮接着を説明する概略断面図(図4(A)、(B))、支持体に仮接着されたデバイスウエハが薄型化された状態(図4(C))、支持体とデバイスウエハを剥離した状態(図4(D))、デバイスウエハから接着層を除去した後の状態(図4(E))を示す概略断面図である。
 この実施形態では、図4(A)に示すように、デバイスウエハの表面61a上に接着層を形成する点が上記第一の実施形態と相違する。
 デバイスウエハ60の表面61a上に、接着層11aを設ける場合は、デバイスウエハ60の表面61aの表面に仮止め接着剤を適用(好ましくは塗布)し、次いで、乾燥(ベーク)することにより形成することができる。乾燥は、例えば、60~150℃で、10秒~2分行うことができる。
 次いで、図4(B)に示す通り、支持体12とデバイスウエハ60とを圧着させ、支持体12とデバイスウエハ60とを仮接着させる。次いで、図4(C)に示すように、シリコン基板61の裏面61bに対して、機械的または化学的な処理を施してシリコン基板61の厚さを薄くし、薄型デバイスウエハ60aを得る。次いで、図4(D)に示すように、支持体12を、薄型デバイスウエハ60aから脱離させる。そして、図4(E)に示すように、薄型デバイスウエハ60aから接着層11を除去する。
<< Second Embodiment >>
A second embodiment of a semiconductor manufacturing method that has undergone a process for manufacturing a laminated body will be described with reference to FIG. The same portions as those in the first embodiment described above are denoted by the same reference numerals and the description thereof is omitted.
4A to 4E are schematic cross-sectional views (FIGS. 4A and 4B) for explaining the temporary bonding between the support and the device wafer, and the device wafer temporarily bonded to the support. The thinned state (FIG. 4C), the support and the device wafer are peeled off (FIG. 4D), and the state after the adhesive layer is removed from the device wafer (FIG. 4E). It is a schematic sectional drawing.
As shown in FIG. 4A, this embodiment is different from the first embodiment in that an adhesive layer is formed on the surface 61a of the device wafer.
When the adhesive layer 11a is provided on the surface 61a of the device wafer 60, the adhesive layer 11a is formed by applying (preferably applying) a temporary fixing adhesive to the surface 61a of the device wafer 60 and then drying (baking). be able to. Drying can be performed, for example, at 60 to 150 ° C. for 10 seconds to 2 minutes.
Next, as shown in FIG. 4B, the support 12 and the device wafer 60 are pressure-bonded, and the support 12 and the device wafer 60 are temporarily bonded. Next, as shown in FIG. 4C, the back surface 61b of the silicon substrate 61 is subjected to mechanical or chemical treatment to reduce the thickness of the silicon substrate 61, thereby obtaining a thin device wafer 60a. Next, as shown in FIG. 4D, the support 12 is detached from the thin device wafer 60a. Then, as shown in FIG. 4E, the adhesive layer 11 is removed from the thin device wafer 60a.
<<第三の実施形態>>
 積層体を製造する工程を経た半導体の製造方法の第三の実施形態について、図5を合わせて参照しながら説明する。上述した第一の実施形態と同一箇所は、同一符号を付してその説明を省略する。
 図5(A)~(E)は、それぞれ、支持体とデバイスウエハとの仮接着を説明する概略断面図(図5(A)、(B))、支持体に仮接着されたデバイスウエハが薄型化された状態(図5(C))、支持体とデバイスウエハを剥離した状態(図5(D))、デバイスウエハから接着層を除去した後の状態(図5(E))を示す概略断面図である。
 この実施形態では、図4(A)、(b)に示すように、支持体12およびデバイスウエハの表面61a上に、それぞれ接着層11b、11cを形成し、支持体およびデバイスウエハの接着層が形成された側の面同士を圧着して積層体を製造する(支持体12とデバイスウエハ60とを仮接着する)点が、上記第一の実施形態と相違する。
 接着層11bおよび接着層11cの少なくとも一方は、本発明の仮止め接着剤を用いて形成することができる。接着層11bおよび接着層11cの両方を、本発明の仮止め接着剤を用いて形成することもでき、一方の接着層のみ、本発明の仮止め接着剤を用い、他方の接着層は、上述した仮止め接着剤Bを用いて形成することもできる。接着層11bを上述した仮止め接着剤Bを用いて形成し、接着層11cを本発明の仮止め接着剤を用いて形成することが好ましい。
 また、接着層11b、11cはそれぞれ、1層のみで構成されていてもよく、2層以上の接着層を積層してなる積層体であってもよい。すなわち、各接着層は、2種以上の仮止め接着剤を塗り重ねて形成することもできる。
 支持体12とデバイスウエハ60とを、仮接着した後、次いで、図5(C)に示すように、シリコン基板61の裏面61bに対して、機械的または化学的な処理を施してシリコン基板61の厚さを薄くし、薄型デバイスウエハ60aを得る。次いで、図5(D)に示すように、支持体12を、薄型デバイスウエハ60aから脱離させる。そして、図5(E)に示すように、薄型デバイスウエハ60aから接着層11dを除去する。
<< Third Embodiment >>
A third embodiment of a semiconductor manufacturing method that has undergone a process for manufacturing a laminated body will be described with reference to FIG. The same portions as those in the first embodiment described above are denoted by the same reference numerals and the description thereof is omitted.
5A to 5E are schematic cross-sectional views (FIGS. 5A and 5B) for explaining the temporary bonding between the support and the device wafer, respectively, and the device wafer temporarily bonded to the support. The thinned state (FIG. 5C), the support and the device wafer are peeled off (FIG. 5D), and the state after the adhesive layer is removed from the device wafer (FIG. 5E). It is a schematic sectional drawing.
In this embodiment, as shown in FIGS. 4A and 4B, adhesive layers 11b and 11c are formed on the support 12 and the surface 61a of the device wafer, respectively. The point which manufactures a laminated body by crimping | bonding the surfaces of the formed side (temporarily adhere | attaches the support body 12 and the device wafer 60) is different from said 1st embodiment.
At least one of the adhesive layer 11b and the adhesive layer 11c can be formed using the temporary fixing adhesive of the present invention. Both the adhesive layer 11b and the adhesive layer 11c can also be formed using the temporary fixing adhesive of the present invention. Only one adhesive layer uses the temporary fixing adhesive of the present invention, and the other adhesive layer is the above-described adhesive layer. It can also be formed using the temporary fixing adhesive B. It is preferable that the adhesive layer 11b is formed using the above-described temporary fixing adhesive B, and the adhesive layer 11c is formed using the temporary fixing adhesive of the present invention.
Further, each of the adhesive layers 11b and 11c may be composed of only one layer, or may be a laminate formed by laminating two or more adhesive layers. That is, each adhesive layer can be formed by repeatedly applying two or more types of temporary adhesives.
After the support 12 and the device wafer 60 are temporarily bonded, the back surface 61b of the silicon substrate 61 is then subjected to mechanical or chemical treatment as shown in FIG. The thin device wafer 60a is obtained. Next, as shown in FIG. 5D, the support 12 is detached from the thin device wafer 60a. Then, as shown in FIG. 5E, the adhesive layer 11d is removed from the thin device wafer 60a.
<<従来の実施形態>>
 次いで、従来の実施形態について説明する。
 図6は、従来の接着性支持体とデバイスウエハとの仮接着状態の解除を説明する概略断面図である。
 従来の実施形態においては、図6に示すように、接着性支持体として、支持体12の上に、従来の仮止め用接着剤により形成された接着層11aが設けられてなる接着性支持体100aを使用し、それ以外は、図3を参照して説明した手順と同様に、接着性支持体100aとデバイスウエハとを仮接着し、デバイスウエハにおけるシリコン基板の薄膜化処理を行い、次いで、上記した手順と同様に、接着性支持体100aから薄型デバイスウエハ60aを剥離する。
<< Conventional Embodiment >>
Next, a conventional embodiment will be described.
FIG. 6 is a schematic cross-sectional view for explaining the release of the temporarily bonded state between the conventional adhesive support and the device wafer.
In the conventional embodiment, as shown in FIG. 6, as an adhesive support, an adhesive support in which an adhesive layer 11a formed of a conventional temporary fixing adhesive is provided on a support 12 is provided. 100a, otherwise, the adhesive support 100a and the device wafer are temporarily bonded in the same manner as described with reference to FIG. 3, and the silicon substrate is thinned on the device wafer. Similar to the above-described procedure, the thin device wafer 60a is peeled off from the adhesive support 100a.
 しかしながら、従来の仮止め接着剤によれば、高い接着力によりデバイスウエハを仮支持し、デバイスウエハに損傷を与えることなく、デバイスウエハに対する仮支持を容易に解除することが困難である。例えば、デバイスウエハと支持体との仮接着を充分にしようとするべく、従来の仮止め接着剤の内、接着性の高いものを採用すると、デバイスウエハと支持体との仮接着が強すぎる傾向となる。よって、この強すぎる仮接着を解除するべく、例えば、図6に示すように、薄型デバイスウエハ60aの裏面にテープ(例えば、ダイシングテープ)70を貼り付け、接着性支持体100aから薄型デバイスウエハ60aを剥離する場合においては、構造体63が設けられたデバイスチップ62から、構造体63が脱離するなどして、デバイスチップ62を破損する不具合が生じやすい。
 一方、従来の仮止め接着剤の内、接着性が低いものを採用すると、デバイスウエハに対する仮支持を容易に解除することはできるが、そもそもデバイスウエハと支持体との仮接着が弱すぎ、デバイスウエハを支持体で確実に支持できないという不具合が生じやすい。
However, according to the conventional temporary fixing adhesive, it is difficult to easily release the temporary support to the device wafer without temporarily supporting the device wafer with a high adhesive force and damaging the device wafer. For example, in order to ensure sufficient temporary bonding between the device wafer and the support, if a highly adhesive adhesive is used among conventional temporary adhesives, the temporary bonding between the device wafer and the support tends to be too strong. It becomes. Therefore, in order to release the temporary bonding that is too strong, for example, as shown in FIG. 6, a tape (for example, dicing tape) 70 is attached to the back surface of the thin device wafer 60a, and the thin device wafer 60a is bonded from the adhesive support 100a. In the case of peeling off, the structure chip 63 is detached from the device chip 62 provided with the structure 63 and the device chip 62 is likely to be damaged.
On the other hand, if a low temporary adhesive adhesive is used, the temporary support for the device wafer can be easily released, but the temporary attachment between the device wafer and the support is too weak in the first place. A problem that the wafer cannot be reliably supported by the support tends to occur.
 これに対し、本発明の積層体は、充分な接着性を発現するとともに、デバイスウエハ60と支持体との仮接着を容易に解除できる。すなわち、本発明の積層体によれば、高い接着力によりデバイスウエハ60を仮接着できるとともに、薄型デバイスウエハ60aに損傷を与えることなく、薄型デバイスウエハ60aに対する仮接着を容易に解除できる。 On the other hand, the laminate of the present invention exhibits sufficient adhesiveness and can easily release the temporary adhesion between the device wafer 60 and the support. That is, according to the laminated body of the present invention, the device wafer 60 can be temporarily bonded with high adhesive force, and the temporary bonding to the thin device wafer 60a can be easily released without damaging the thin device wafer 60a.
 本発明の半導体装置の製造方法は、上述した実施の形態に限定されるものではなく、適宜な変形、改良等が可能である。
 また、上述した実施形態において、接着層は単層構造であるが、接着層は多層構造であってもよい。
 また、上述した実施形態においては、デバイスウエハとして、シリコン基板を挙げたが、これに限定されるものではなく、半導体装置の製造方法において、機械的または化学的な処理に供され得るいずれの被処理部材であっても良い。例えば、化合物半導体基板を挙げることもでき、化合物半導体基板の具体例としては、SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板、および、GaN基板などが挙げられる。
 また、上述した実施形態においては、デバイスウエハ(シリコン基板)に対する機械的または化学的な処理として、デバイスウエハの薄膜化処理、および、シリコン貫通電極の形成処理を挙げたが、これらに限定されるものではなく、半導体装置の製造方法において必要ないずれの処理も挙げられる。
 その他、上述した実施形態において例示した、デバイスウエハにおけるデバイスチップの形状、寸法、数、配置箇所等は任意であり、限定されない。
The method for manufacturing a semiconductor device of the present invention is not limited to the above-described embodiment, and appropriate modifications and improvements can be made.
In the above-described embodiment, the adhesive layer has a single layer structure, but the adhesive layer may have a multilayer structure.
In the above-described embodiment, a silicon substrate is used as the device wafer. However, the present invention is not limited to this, and any device that can be subjected to mechanical or chemical processing in the method of manufacturing a semiconductor device is not limited thereto. It may be a processing member. For example, a compound semiconductor substrate can also be mentioned, and specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.
In the above-described embodiments, the device wafer (silicon substrate) is mechanically or chemically treated as a device wafer thinning process and a through silicon via formation process, but is not limited thereto. Any processing required in the method of manufacturing a semiconductor device is included.
In addition, the shape, size, number, arrangement location, and the like of the device chip in the device wafer exemplified in the above-described embodiment are arbitrary and are not limited.
<キット>
 次に、本発明のキットについて説明する。
 本発明のキットは、上述した本発明の第1の仮止め接着剤と、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含み、かつ上記第1の仮止め接着剤とは組成が異なる第2の接着剤を有する。第2の接着剤は、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含むことが好ましい。さらに、第2の接着剤において、25℃で液体状であって、シリコン原子を含有する化合物の含有量は、第1の仮止め接着剤に含まれる、25℃で液体状であって、シリコン原子を含有する化合物の含有量の10質量%以下であることが好ましい。また、本発明における第2の接着剤は、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYを含むことが好ましい。このような構成とすることにより、ウエハの反りをより効果的に抑制することができる。
 第2の接着剤における、エラストマーXおよびエラストマーY、並びにその配合比率は、本発明の仮止め接着剤の所で述べたものと同義であり好ましい範囲も同様である。また、第2の接着剤にも、本発明の仮止め接着剤の所で述べた各種添加剤等を配合してもよい。これらの配合量等も、本発明の仮止め接着剤の所で述べた範囲が好ましい。
 本発明のキットは、更に、基材および支持体を有することが好ましい。基材および支持体としては、上述した積層体で説明した基材および支持体が挙げられ、これらを用いることができる。
 基材および支持体を更に有することで、基材と支持体との間に、本発明の仮止め接着剤からなる第1の接着層と、上述した第2の接着層とを有する積層体を製造できる。
<Kit>
Next, the kit of the present invention will be described.
The kit of the present invention includes the first temporary fixing adhesive of the present invention described above and an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, and It has the 2nd adhesive agent from which a composition differs from the said 1st temporary fix | stop adhesive. The second adhesive preferably contains an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units. Further, in the second adhesive, the content of the compound that is liquid at 25 ° C. and that contains silicon atoms is contained in the first temporary adhesive, and is liquid at 25 ° C. It is preferable that it is 10 mass% or less of content of the compound containing an atom. Moreover, it is preferable that the 2nd adhesive agent in this invention contains the elastomer Y which contains the repeating unit derived from styrene in the ratio of 10 mass% or more and less than 50 mass% in all the repeating units. With such a configuration, the warpage of the wafer can be more effectively suppressed.
In the second adhesive, the elastomer X and the elastomer Y, and the blending ratio thereof are synonymous with those described for the temporary adhesive of the present invention, and the preferred ranges are also the same. Moreover, you may mix | blend the various additives etc. which were described in the place of the temporary fix | adhesive adhesive agent of this invention with the 2nd adhesive agent. These blending amounts and the like are also preferably in the range described in the temporary fixing adhesive of the present invention.
It is preferable that the kit of this invention has a base material and a support body further. As a base material and a support body, the base material and support body which were demonstrated by the laminated body mentioned above are mentioned, These can be used.
By further including a base material and a support, a laminate having the first adhesive layer made of the temporary fixing adhesive of the present invention and the above-described second adhesive layer is provided between the base material and the support. Can be manufactured.
 以下、本発明を実施例によりさらに具体的に説明するが、本発明はその主旨を越えない限り、以下の実施例に限定されるものではない。尚、特に断りのない限り、「部」、「%」は質量基準である。
 また、プロピレングリコール-1-メチルエーテルアセテートを「PGMEA」と記す。
EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples unless it exceeds the gist thereof. Unless otherwise specified, “part” and “%” are based on mass.
Propylene glycol-1-methyl ether acetate is referred to as “PGMEA”.
 本実施例では以下の材料を用いた。
[A成分]
(a-1)KP-323(信越化学(株)製)
(a-2)KP-326(信越化学(株)製)
(a-3)KP-341(信越化学(株)製)
(a-4)KP-360A(信越化学(株)製)
(a-5)KP-361(信越化学(株)製)
(a-6)KP-354(信越化学(株)製)
(a-7)KP-356(信越化学(株)製)
(a-8)KP-358(信越化学(株)製)
(a-9)BYK333(ビックケミー社製)
(a-10)ポリフローKL-700(共栄社化学(株)製)
(a-11)TEGO WET 270(エボニック・デグサ・ジャパン(株)製)  
(a-12)SH28PA(東レ・ダウコーニング(株)製)
(a-13)NBX-15(ネオス(株)製)
(Ra-1)KR220L(シリコーン樹脂固体、信越化学(株)製)
(Ra-2)1-ドデセン(炭化水素系オイル、東京化成工業(株)製)
(a―1)~(a―13)の25℃での粘度は、10~20,000mPa・sの範囲内であった。
In this example, the following materials were used.
[Component A]
(A-1) KP-323 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-2) KP-326 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-3) KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-4) KP-360A (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-5) KP-361 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-6) KP-354 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-7) KP-356 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-8) KP-358 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(A-9) BYK333 (by Big Chemie)
(A-10) Polyflow KL-700 (manufactured by Kyoeisha Chemical Co., Ltd.)
(A-11) TEGO WET 270 (Evonik Degussa Japan Co., Ltd.)
(A-12) SH28PA (Toray Dow Corning Co., Ltd.)
(A-13) NBX-15 (manufactured by Neos Corporation)
(Ra-1) KR220L (solid silicone resin, manufactured by Shin-Etsu Chemical Co., Ltd.)
(Ra-2) 1-dodecene (hydrocarbon oil, manufactured by Tokyo Chemical Industry Co., Ltd.)
The viscosities at 25 ° C. of (a-1) to (a-13) were in the range of 10 to 20,000 mPa · s.
[B成分]
(b-1):セプトン2104(水添ポリスチレン系エラストマー、スチレン含有率=65質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=400℃以上450℃未満、Mw=5万以上10万未満、硬度(タイプAデュロメーター)=98、クラレ(株)製)
(b-2):タフテックP2000(水添ポリスチレン系エラストマー、スチレン含有率=67質量%、不飽和二重結合量=0.5mmol/g以上5mmol/g未満、5%熱質量減少温度=400℃以上450℃未満、Mw=5万以上10万未満、硬度(タイプAデュロメーター)=90以上、旭化成(株)製)
(b-3):セプトン8104(水添ポリスチレン系エラストマー、スチレン含有率=60質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=350℃以上400℃未満、硬度(タイプAデュロメーター)=98、クラレ(株)製)
(b-4):クレイトンA1535(水添ポリスチレン系エラストマー、スチレン含有率=58質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=400℃以上450℃未満、硬度(タイプAデュロメーター)=83、クレイトン社製)
[B component]
(B-1): Septon 2104 (hydrogenated polystyrene elastomer, styrene content = 65 mass%, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. or higher and lower than 450 ° C. Mw = 50,000 to less than 100,000, hardness (type A durometer) = 98, manufactured by Kuraray Co., Ltd.)
(B-2): Tuftec P2000 (hydrogenated polystyrene elastomer, styrene content = 67% by mass, unsaturated double bond content = 0.5 mmol / g or more and less than 5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. More than 450 ° C, Mw = 50,000 to less than 100,000, Hardness (Type A durometer) = 90 or more, manufactured by Asahi Kasei Corporation
(B-3): Septon 8104 (hydrogenated polystyrene elastomer, styrene content = 60% by mass, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 350 ° C. or more and less than 400 ° C. , Hardness (Type A durometer) = 98, manufactured by Kuraray Co., Ltd.)
(B-4): Kraton A1535 (hydrogenated polystyrene elastomer, styrene content = 58 mass%, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. or more and less than 450 ° C. , Hardness (Type A durometer) = 83, manufactured by Clayton)
(b-5):セプトン2002(水添ポリスチレン系エラストマー、スチレン含有率=30質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=350℃以上400℃未満、Mw=5万以上10万未満、硬度(タイプAデュロメーター)=80、クラレ(株)製)
(b-6):セプトン4033(水添ポリスチレン系エラストマー、スチレン含有率=30質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=400℃以上400℃未満、硬度(タイプAデュロメーター)=76、クラレ(株)製)
(b-7):クレイトンG1650(水添ポリスチレン系エラストマー、スチレン含有率=30質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=400℃以上450℃未満、硬度(タイプAデュロメーター)=70、クレイトン社製)
(b-8):セプトン8004(水添ポリスチレン系エラストマー、スチレン含有率=31質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=400℃以上450℃未満、Mw=5万以上10万未満、硬度(タイプAデュロメーター)=80、クラレ(株)製)
(b-9):セプトン8007(水添ポリスチレン系エラストマー、スチレン含有率=30質量%、不飽和二重結合量=0.5mmol/g未満、5%熱質量減少温度=400℃以上450℃未満、Mw=5万以上10万未満、硬度(タイプAデュロメーター)=77、クラレ(株)製)
(b-10):SIS5200P(非水添ポリスチレン系エラストマー、スチレン含有率=15質量%、不飽和二重結合量=5mmol/g以上15mmol/g未満、5%熱質量減少温度=250℃以上350℃未満、Mw=10万以上20万未満、JSR(株)製)
(B-5): Septon 2002 (hydrogenated polystyrene elastomer, styrene content = 30% by mass, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 350 ° C. or more and less than 400 ° C. Mw = 50,000 to less than 100,000, hardness (type A durometer) = 80, manufactured by Kuraray Co., Ltd.)
(B-6): Septon 4033 (hydrogenated polystyrene elastomer, styrene content = 30 mass%, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. or more and less than 400 ° C. , Hardness (Type A durometer) = 76, manufactured by Kuraray Co., Ltd.)
(B-7): Kraton G1650 (hydrogenated polystyrene elastomer, styrene content = 30% by mass, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. or higher and lower than 450 ° C. , Hardness (Type A durometer) = 70, manufactured by Clayton)
(B-8): Septon 8004 (hydrogenated polystyrene elastomer, styrene content = 31 mass%, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. or higher and lower than 450 ° C. Mw = 50,000 to less than 100,000, hardness (type A durometer) = 80, manufactured by Kuraray Co., Ltd.)
(B-9): Septon 8007 (hydrogenated polystyrene elastomer, styrene content = 30 mass%, unsaturated double bond content = less than 0.5 mmol / g, 5% thermal mass reduction temperature = 400 ° C. or higher and lower than 450 ° C. , Mw = 50,000 to 100,000, hardness (type A durometer) = 77, manufactured by Kuraray Co., Ltd.)
(B-10): SIS5200P (non-hydrogenated polystyrene elastomer, styrene content = 15 mass%, unsaturated double bond content = 5 mmol / g or more and less than 15 mmol / g, 5% thermal mass reduction temperature = 250 ° C. or more and 350 ° C. <° C., Mw = 100,000 to less than 200,000, manufactured by JSR Corporation)
(Rb-1):RB810(ポリブタジエン系エラストマー、不飽和二重結合量15mmol/g以上、5%熱質量減少温度=100℃以上250℃未満、Mw=20万以上30万未満、JSR(株)製)
(Rb-2):ZEONEX 480R(日本ゼオン製シクロオレフィン系重合体)
(Rb-3):Durimide(登録商標) 284(富士フイルム製ポリイミド)
(Rb-4):PCZ300(三菱ガス化学社製ポリカーボネート)
(Rb-5):ハイトレル7247(ポリエステル系エラストマー、5%熱質量減少温度=383℃、硬度(タイプAデュロメーター)=90以上、東レデュポン社製)
(Rb-6):プリマロイCP300(ポリエステル系エラストマー、5%熱質量減少温度=399℃、硬度(タイプAデュロメーター)=90以上、三菱化学社製)
(Rb-1): RB810 (polybutadiene elastomer, unsaturated double bond content 15 mmol / g or more, 5% thermal mass reduction temperature = 100 ° C. or more and less than 250 ° C., Mw = 200,000 or more and less than 300,000, JSR Corporation Made)
(Rb-2): ZEONEX 480R (Nippon Zeon cycloolefin polymer)
(Rb-3): Durimide (registered trademark) 284 (polyimide made by FUJIFILM)
(Rb-4): PCZ300 (Mitsubishi Gas Chemical Polycarbonate)
(Rb-5): Hytrel 7247 (polyester elastomer, 5% thermal mass reduction temperature = 383 ° C., hardness (type A durometer) = 90 or more, manufactured by Toray DuPont)
(Rb-6): Primalloy CP300 (polyester elastomer, 5% thermal mass reduction temperature = 399 ° C., hardness (type A durometer) = 90 or more, manufactured by Mitsubishi Chemical Corporation)
 不飽和二重結合量は、NMR測定により算出した値である。
 5%熱質量減少温度は、熱重量測定装置(TGA)により、窒素気流下において、25℃から、20℃/分で昇温した条件にて、測定開始時の質量の5%が減少する温度を測定した値である。
The amount of unsaturated double bonds is a value calculated by NMR measurement.
The 5% thermal mass decrease temperature is a temperature at which 5% of the mass at the start of measurement is reduced under the condition that the temperature is increased from 25 ° C. at 20 ° C./min in a nitrogen stream by a thermogravimetric measuring device (TGA). Is a measured value.
[試験例1]
<接着性支持体1の形成>
 接着層形成用塗布液1を、直径100mm、厚さ525μmのSiウエハ(支持体ウエハ)上にスピンコーター塗布した後、110℃で1分ベークし、さらに190℃で4分ベークすることで接着層を有する接着性支持体1を作製した。
[Test Example 1]
<Formation of Adhesive Support 1>
The adhesive layer forming coating solution 1 is applied onto a Si wafer (support wafer) having a diameter of 100 mm and a thickness of 525 μm by spin coating, followed by baking at 110 ° C. for 1 minute and further by baking at 190 ° C. for 4 minutes. An adhesive support 1 having a layer was prepared.
<接着層形成用塗布液1の組成>
・A成分:表1に記載のA成分を、表1に示す質量部
・B成分:表1に記載のB成分を、表1に示す質量部
・Irganox 1010(BASF(株)製):0.9質量部
・Sumilizer TP-D(住友化学(株)製):0.9質量部
・溶剤:表1に記載の溶剤を、表1に示す質量部
<Composition of Coating Solution 1 for Adhesive Layer Formation>
-A component: The A component of Table 1 is the mass part shown in Table 1.-B component: The B component of Table 1 is the mass part shown in Table 1.-Irganox 1010 (manufactured by BASF Corp.): 0 .9 parts by mass-Sumilizer TP-D (manufactured by Sumitomo Chemical Co., Ltd.): 0.9 part by mass-Solvent:
<試験片の作製>
 接着性支持体1の接着層が形成された側の面と、直径100mm、厚さ525μm、高さ10μmのCu製バンプ付きのSiウエハ(デバイスウエハ)のデバイス面とを、真空下、190℃、0.11MPaの圧力で3分間圧着を行い、試験片を作製した。
<Preparation of test piece>
A surface of the adhesive support 1 on which the adhesive layer is formed and a device surface of a Si wafer (device wafer) with a bump made of Cu having a diameter of 100 mm, a thickness of 525 μm, and a height of 10 μm are subjected to 190 ° C. under vacuum. The test piece was manufactured by pressure bonding for 3 minutes at a pressure of 0.11 MPa.
<接着性>
 試験片のせん断接着力を、引っ張り試験機((株)イマダ製デジタルフォースゲージ、型式:ZP-50N)を用いて、250mm/minの条件で接着層の面に沿った方向に引っ張り測定し、以下の基準で評価した。
A:50N以上の接着力
B:10N以上50N未満の接着力
C:10N未満の接着力
<Adhesiveness>
Using a tensile tester (Imada Digital Force Gauge, Model: ZP-50N), the tensile strength of the test piece was measured in a direction along the surface of the adhesive layer under the condition of 250 mm / min. Evaluation was made according to the following criteria.
A: Adhesive force of 50N or more B: Adhesive force of 10N or more and less than 50N C: Adhesive force of less than 10N
<剥離性>
 試験片を、ダイシングテープマウンターの中央にダイシングフレームとともにセットし、ダイシングテープを上方から配置した。真空下、ローラーで試験片とダイシングテープを固定し、ダイシングフレーム上でダイシングテープをカットし、ダイシングテープ上に試験片をマウントした。
 25℃下において、試験片を50mm/minの条件で接着層の面に対して垂直方向(90°方向)に引っ張り、剥離性を以下の基準で評価した。また、作製された試験片を250℃で30分加熱した後に、25℃下おいて、試験片を、50mm/minの条件で接着層の垂直方向に引っ張り、熱プロセス後の剥離性を確認し、以下の基準で評価した。なお、Siウエハの破損の有無は目視で確認した。
A:最大の剥離力が12N未満で剥離できた。
B:最大の剥離力が12N以上16N未満で剥離できた。
C:最大の剥離力が16N以上20N未満で剥離できた。
D:最大の剥離力が20N以上25N未満で剥離できた。
E:最大の剥離力が25N/cm以上もしくはSiウエハが破損してしまった。
<Peelability>
The test piece was set together with a dicing frame in the center of the dicing tape mounter, and the dicing tape was arranged from above. Under vacuum, the test piece and the dicing tape were fixed with a roller, the dicing tape was cut on a dicing frame, and the test piece was mounted on the dicing tape.
Under 25 ° C., the test piece was pulled in the direction perpendicular to the surface of the adhesive layer (90 ° direction) under the condition of 50 mm / min, and the peelability was evaluated according to the following criteria. In addition, after heating the prepared test piece at 250 ° C. for 30 minutes, the test piece was pulled at 25 ° C. in the vertical direction of the adhesive layer under the condition of 50 mm / min, and the peelability after the thermal process was confirmed. The evaluation was based on the following criteria. In addition, the presence or absence of the damage of Si wafer was confirmed visually.
A: The maximum peeling force was less than 12N, and peeling was possible.
B: It was able to peel off with the largest peeling force being 12N or more and less than 16N.
C: Separation was possible when the maximum peeling force was 16N or more and less than 20N.
D: Separation was possible when the maximum peeling force was 20N or more and less than 25N.
E: The maximum peeling force was 25 N / cm or more or the Si wafer was damaged.
<除去性(溶解除去)>
 剥離性試験終了後の接着層付きSiウエハ(デバイスウエハ)を、接着層を上にしてスピンコーターにセットし、洗浄溶剤として下記表1に記載の接着層形成用塗布液の溶剤と同一の溶剤を使用して、5分間噴霧した。さらに、5分間噴霧にメシチレンを使用しなかった比較例5、6、7のみ、Siウエハを回転させながらイソプロピルアルコール(IPA)を噴霧にてリンスを行った。更にスピン乾燥を行った。その後、外観を観察して残存する接着層の有無を目視、および、X線光電子分光法により、Siウエハ表面の炭素原子量でチェックし、以下の基準で評価した。
<Removability (dissolution removal)>
After completion of the peelability test, the adhesive layer-attached Si wafer (device wafer) is set on a spin coater with the adhesive layer facing up, and the same solvent as the solvent for the adhesive layer forming coating solution shown in Table 1 below is used as a cleaning solvent. And sprayed for 5 minutes. Furthermore, only Comparative Examples 5, 6, and 7 in which mesitylene was not used for spraying for 5 minutes were rinsed by spraying isopropyl alcohol (IPA) while rotating the Si wafer. Further, spin drying was performed. Thereafter, the appearance was observed and the presence or absence of the remaining adhesive layer was checked visually and by X-ray photoelectron spectroscopy with the amount of carbon atoms on the surface of the Si wafer, and evaluated according to the following criteria.
<<X線光電子分光法の測定方法>>
 測定装置はPHI Quantera SXM(アルバック・ファイ社製)を用い、ウエハの基材面1400μm×700μmの分析面積範囲に対して、単色化したAlKα線を25W照射し、取り出し角度45°で検出して、炭素原子の存在比率(atm%)を測定した。測定温度は、25℃で、測定圧力は、10-8Pa以下であった。
 尚、ウエハの基材面の面積とは、基材面の表面に凹凸がある場合も、その凹凸部が無いと仮定した場合の基材の表面の面積をいう。
 以下の評価区分に従って評価した。
A:ESCA測定の結果、炭素原子の存在比率が1%未満であった。
B:ESCA測定の結果、炭素原子の存在比率が1%以上3%未満であった。
C:ESCA測定の結果、炭素原子の存在比率が3%以上であった。
<< Measurement Method of X-ray Photoelectron Spectroscopy >>
The measurement apparatus uses PHI Quantera SXM (manufactured by ULVAC-PHI), irradiates the substrate surface of the wafer 1400 μm × 700 μm with 25 W of monochromatic AlKα ray, and detects it at an extraction angle of 45 °. The abundance ratio (atm%) of carbon atoms was measured. The measurement temperature was 25 ° C. and the measurement pressure was 10 −8 Pa or less.
The area of the substrate surface of the wafer refers to the area of the surface of the substrate when it is assumed that there is no uneven portion even when the surface of the substrate surface is uneven.
Evaluation was made according to the following evaluation categories.
A: As a result of ESCA measurement, the abundance ratio of carbon atoms was less than 1%.
B: As a result of ESCA measurement, the abundance ratio of carbon atoms was 1% or more and less than 3%.
C: As a result of ESCA measurement, the abundance ratio of carbon atoms was 3% or more.
<除去性(フィルム除去)>
 25℃下において、剥離性試験終了後の接着層付きSiウエハ(デバイスウエハ)を動かないように固定し、接着層付きSiウエハ上の接着層に剥離用テープ(リンテック株式会社製)を貼り付け、剥離用テープを接着層に対して垂直方向に引っ張り、接着層を90°方向に50mm/minの速度で引き上げて、Siウエハ(デバイスウエハ)のデバイス面より接着層をフィルム状に剥離した。その後、外観を観察してSiウエハ上に残存する接着層の剥離残渣の有無を目視でチェックし、以下の基準で評価した。
A:4N/cm以下の剥離強度で、破断することなく接着層をフィルム状に除去でき、接着層の剥離残渣が認められない。
B:4N/cmを超える剥離強度で、破断することなく接着層をフィルム状に除去でき、接着層の剥離残渣が認められない。
C:上記AおよびBのいずれにも該当しない(剥離の途中で破断した)
<Removability (film removal)>
At 25 ° C., the Si wafer with an adhesive layer (device wafer) after the peelability test is fixed so as not to move, and a peeling tape (manufactured by Lintec Corporation) is attached to the adhesive layer on the Si wafer with an adhesive layer. Then, the peeling tape was pulled in the direction perpendicular to the adhesive layer, and the adhesive layer was pulled up at a speed of 50 mm / min in the 90 ° direction to peel the adhesive layer from the device surface of the Si wafer (device wafer) into a film. Thereafter, the appearance was observed, the presence or absence of a peeling residue of the adhesive layer remaining on the Si wafer was visually checked, and evaluated according to the following criteria.
A: With a peel strength of 4 N / cm or less, the adhesive layer can be removed in the form of a film without breaking, and no peeling residue of the adhesive layer is observed.
B: With a peel strength exceeding 4 N / cm, the adhesive layer can be removed in a film form without breaking, and no peel residue of the adhesive layer is observed.
C: Not applicable to any of the above A and B (breakage during peeling)
<ウエハ反り>
 作製した試験片のデバイスウエハの、接着層に接していない側の面を、デバイスウエハの厚さが35μmの厚さになるまで研磨した後、KLA-Tencor社製FLX-2320を用いて、昇温速度および冷却速度を10℃/分に設定し、室温から200℃まで加熱後、25℃まで冷却し、Bow値(反りの大きさ)を測定した。
 A:Bow値が40μm以下
 B:Bow値が40μmを超え80μm未満
 C:Bow値が80μm以上200μm未満
 D:Bow値が200μm以上
<Wafer warpage>
After polishing the surface of the device wafer that is not in contact with the adhesive layer of the prepared test piece until the thickness of the device wafer reaches 35 μm, the surface is raised using FLX-2320 manufactured by KLA-Tencor. The temperature rate and the cooling rate were set to 10 ° C./min, heated from room temperature to 200 ° C., then cooled to 25 ° C., and the Bow value (warping magnitude) was measured.
A: Bow value is 40 μm or less B: Bow value exceeds 40 μm and less than 80 μm C: Bow value is 80 μm or more and less than 200 μm D: Bow value is 200 μm or more
Figure JPOXMLDOC01-appb-T000005
Figure JPOXMLDOC01-appb-T000005
 上記結果から明らかなとおり、本発明の仮止め接着剤を用いた場合、接着性および常温剥離性が良好であった。更には、加熱後の剥離性、接着層の除去性が良好で、ウエハの反りが抑制されたものであった。
 また、エラストマーとして、上述したエラストマーXと、エラストマーYとを併用した実施例は、ウエハの反りがより効果的に抑制された。
As apparent from the above results, when the temporary adhesive of the present invention was used, the adhesiveness and the room temperature peelability were good. Furthermore, the peelability after heating and the removability of the adhesive layer were good, and the warpage of the wafer was suppressed.
Further, in the example in which the above-described elastomer X and elastomer Y were used in combination as the elastomer, the warpage of the wafer was more effectively suppressed.
[試験例2]
<接着性支持体2の形成>
 接着層形成用塗布液2を、直径100mm、厚さ525μmのSiウエハ(支持体ウエハ)上にスピンコーター塗布した後、110℃で1分ベークし、さらに190℃で4分ベークすることで接着層を有する接着性支持体2を作製した。
 また、接着層形成用塗布液3を、直径100mm、厚さ525μm、高さ10μmのCu製バンプ付きのSiウエハ(デバイスウエハ)上にスピンコーター塗布した後、110℃で1分ベークし、さらに190℃で4分ベークすることで接着層を有する接着性基材を作製した。
[Test Example 2]
<Formation of Adhesive Support 2>
The adhesive layer forming coating solution 2 is spin-coated on a Si wafer (support wafer) having a diameter of 100 mm and a thickness of 525 μm, and then baked at 110 ° C. for 1 minute, and further baked at 190 ° C. for 4 minutes. The adhesive support body 2 which has a layer was produced.
Further, the coating solution 3 for forming the adhesive layer was spin coated on a Si wafer (device wafer) with a bump made of Cu having a diameter of 100 mm, a thickness of 525 μm, and a height of 10 μm, and then baked at 110 ° C. for 1 minute. The adhesive base material which has an adhesive layer was produced by baking at 190 degreeC for 4 minutes.
<接着層形成用塗布液2、3の組成>
・A成分:表2に記載のA成分を、表2に示す質量部
・B成分:表2に記載のB成分を、表2に示す質量部
・Irganox 1010(BASF(株)製):0.9質量部
・Sumilizer TP-D(住友化学(株)製):0.9質量部
・メシチレン:30質量部
<Composition of coating liquids 2 and 3 for forming an adhesive layer>
-A component: The A component described in Table 2 is the mass part shown in Table 2.-B component: The B component described in Table 2 is the mass part shown in Table 2.-Irganox 1010 (manufactured by BASF Corp.): 0 .9 parts by mass. Sumilizer TP-D (manufactured by Sumitomo Chemical Co., Ltd.): 0.9 parts by mass. Mesitylene: 30 parts by mass.
<試験片の作製>
 接着性支持体2の接着層が形成された側の面と、接着性基材の接着層が形成された面とを、真空下、190℃、0.11MPaの圧力で3分間圧着を行い、試験片を作製した。
<Preparation of test piece>
The surface of the adhesive support 2 on which the adhesive layer is formed and the surface of the adhesive base material on which the adhesive layer is formed are pressure-bonded under a vacuum at 190 ° C. and a pressure of 0.11 MPa for 3 minutes, A test piece was prepared.
<接着性>
 試験例1における接着性評価と同じ方法および基準で接着性を評価した。
<埋め込み性>
 試験片をC-SAM(超音波顕微鏡)を用いて、貼り合せ後の接着層(接着層同士の界面、接着層と基材の接合面、および接着層と支持体との接合面を含む)におけるボイドの有無を確認した。
 A:ボイド発生なし。
 B:直径10μm以下の小さなボイドが1個以上5個以下確認できるが実害なし。
 C:直径10μm以下の小さなボイドが5個を超え10個未満確認できるが実害なし。
 D:直径10μmを超えるボイドが10個以上発生して、実害あり。
<剥離性>
 試験例1における剥離性評価と同じ方法および基準で剥離性を評価した。
<除去性(溶解除去)>
 試験例1における除去性(溶解除去)と同じ方法および基準で除去性(溶解除去)を評価した。
<除去性(フィルム除去)>
 試験例1における除去性(フィルム除去)と同じ方法および基準で除去性(フィルム除去)を評価した。
<ウエハ反り>
 試験例1におけるウエハ反りと同じ方法および基準でウエハ反りを評価した。
<Adhesiveness>
The adhesiveness was evaluated by the same method and standard as the adhesiveness evaluation in Test Example 1.
<Embeddability>
Adhesive layer after bonding the test piece using C-SAM (ultrasonic microscope) (including the interface between the adhesive layers, the bonding surface between the bonding layer and the substrate, and the bonding surface between the bonding layer and the support) The presence or absence of voids was confirmed.
A: No void was generated.
B: 1 to 5 small voids having a diameter of 10 μm or less can be confirmed, but there is no actual harm
C: More than 5 small voids having a diameter of 10 μm or less can be confirmed, but there is no actual harm.
D: Ten or more voids having a diameter of more than 10 μm are generated, which is actually harmful.
<Peelability>
The peelability was evaluated by the same method and standard as the peelability evaluation in Test Example 1.
<Removability (dissolution removal)>
The removability (dissolution removal) was evaluated by the same method and standard as the removability (dissolution removal) in Test Example 1.
<Removability (film removal)>
The removability (film removal) was evaluated by the same method and standard as the removability (film removal) in Test Example 1.
<Wafer warpage>
Wafer warpage was evaluated by the same method and standard as the wafer warpage in Test Example 1.
Figure JPOXMLDOC01-appb-T000006
Figure JPOXMLDOC01-appb-T000006
 上記結果から明らかなとおり、本発明の仮止め接着剤を用いた場合、接着性および常温剥離性が良好であった。更には、加熱後の剥離性、接着層の除去性が良好であった。
 また、エラストマーとして、上述したエラストマーXと、エラストマーYとを併用した実施例は、ウエハの反りがより効果的に抑制された。
 また、支持体側とデバイス側の双方に塗布した場合(実施例34~41)では埋め込み性が良好であった。
As apparent from the above results, when the temporary adhesive of the present invention was used, the adhesiveness and the room temperature peelability were good. Furthermore, the peelability after heating and the removability of the adhesive layer were good.
Further, in the example in which the above-described elastomer X and elastomer Y were used in combination as the elastomer, the warpage of the wafer was more effectively suppressed.
In addition, when applied to both the support side and the device side (Examples 34 to 41), the embedding property was good.
[試験例3]
<接着フィルムの作製方法>
 実施例42~50および比較例12~15、18~21の接着フィルム形成用組成物を、厚み75μmの離型ポリエチレンテレフタレート(PET)フィルム上に、速度1m/分の速度でワイヤバーによって塗工し、140℃、10分間乾燥することによって、フィルム厚100μmの接着フィルムを作製した。
 比較例16、17の接着フィルム形成用組成物を、300℃5分間で溶融撹拌し、幅100μmのスリットから押し出すことで接着フィルム(押出成型シート)を作製した。
[Test Example 3]
<Method for producing adhesive film>
The adhesive film forming compositions of Examples 42 to 50 and Comparative Examples 12 to 15 and 18 to 21 were coated on a release polyethylene terephthalate (PET) film having a thickness of 75 μm with a wire bar at a speed of 1 m / min. By drying at 140 ° C. for 10 minutes, an adhesive film having a film thickness of 100 μm was produced.
The adhesive film forming compositions of Comparative Examples 16 and 17 were melted and stirred at 300 ° C. for 5 minutes, and extruded from a slit having a width of 100 μm to produce an adhesive film (extruded sheet).
(接着フィルム形成用組成物の組成)
・A成分:表3に記載のA成分を、表3に示す質量部
・B成分:表3に記載のB成分を、表3に示す質量部
・溶剤:表3に記載の溶剤を、表3に示す質量部
(Composition of the composition for forming an adhesive film)
-A component: The A component of Table 3 is the mass part shown in Table 3.-B component: The B component of Table 3 is the mass part shown in Table 3.-Solvent: The solvent of Table 3 is the table. 3 parts by mass
<試験片の作製>
 接着性支持体2の接着層が形成された側の面と、直径100mmのSiウエハとを、真空下、190℃、0.11MPaの圧力で3分間圧着を行い、試験片を作製した。
<Preparation of test piece>
A surface of the adhesive support 2 on which the adhesive layer was formed and a Si wafer having a diameter of 100 mm were pressure-bonded under a vacuum at 190 ° C. and a pressure of 0.11 MPa for 3 minutes to prepare a test piece.
<接着性>
 試験例1における接着性評価と同じ方法および基準で接着性を評価した。
<剥離性>
 試験例1における剥離性評価と同じ方法および基準で剥離性を評価した。
<除去性(溶解除去)>
 剥離性試験終了後の接着層付きSiウエハを、接着層を上にしてスピンコーターにセットし、洗浄溶剤として下記表3に記載の溶剤を使用して、ウエハに5分間噴霧した。更にスピン乾燥を行った。その後、外観を観察して残存する接着層の有無を目視でチェックし、以下の基準で評価した。
A:接着層の残存が認められない
B:接着層の残存が認められた
<除去性(フィルム除去)>
 試験例1における除去性(フィルム除去)と同じ方法および基準で除去性(フィルム除去)を評価した。
<ウエハ反り>
 試験例1におけるウエハ反りと同じ方法および基準でウエハ反りを評価した。
<Adhesiveness>
The adhesiveness was evaluated by the same method and standard as the adhesiveness evaluation in Test Example 1.
<Peelability>
The peelability was evaluated by the same method and standard as the peelability evaluation in Test Example 1.
<Removability (dissolution removal)>
After completion of the peelability test, the Si wafer with an adhesive layer was set on a spin coater with the adhesive layer facing upward, and sprayed onto the wafer for 5 minutes using the solvents described in Table 3 below as the cleaning solvent. Further, spin drying was performed. Thereafter, the appearance was observed to visually check the presence or absence of the remaining adhesive layer, and evaluated according to the following criteria.
A: Remaining adhesive layer is not observed B: Remaining adhesive layer is observed <Removability (film removal)>
The removability (film removal) was evaluated by the same method and standard as the removability (film removal) in Test Example 1.
<Wafer warpage>
Wafer warpage was evaluated by the same method and standard as the wafer warpage in Test Example 1.
Figure JPOXMLDOC01-appb-T000007
Figure JPOXMLDOC01-appb-T000007
 上記結果から明らかなとおり、本発明の仮止め接着剤を用いた場合、接着性および常温剥離性が良好であった。更には、加熱後の剥離性、接着層の除去性が良好で、ウエハの反りが抑制されたものであった。
 また、エラストマーとして、上述したエラストマーXと、エラストマーYとを併用した実施例は、ウエハの反りがより効果的に抑制された。
As apparent from the above results, when the temporary adhesive of the present invention was used, the adhesiveness and the room temperature peelability were good. Furthermore, the peelability after heating and the removability of the adhesive layer were good, and the warpage of the wafer was suppressed.
Further, in the example in which the above-described elastomer X and elastomer Y were used in combination as the elastomer, the warpage of the wafer was more effectively suppressed.
1:基材
2:支持体
3、3A、3B、11、11a~11d:接着層
12:支持体
60:デバイスウエハ
60a:薄型デバイスウエハ
61:シリコン基板
61a:表面
61b:、61b1:裏面
62:デバイスチップ
63:構造体
100、100a:接着性支持体
1: base material 2: supports 3, 3A, 3B, 11, 11a to 11d: adhesive layer 12: support 60: device wafer 60a: thin device wafer 61: silicon substrate 61a: front surface 61b :, 61b1: back surface 62: Device chip 63: structure 100, 100a: adhesive support

Claims (25)

  1.  25℃で液体状であって、シリコン原子を含有する化合物と、
     スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーX、
    を含有する仮止め接着剤。
    A compound that is liquid at 25 ° C. and contains silicon atoms;
    Elastomer X containing repeating units derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units,
    Temporary tack adhesive containing.
  2.  前記シリコン原子を含有する化合物の、25℃から、20℃/分で昇温した10%熱質量減少温度が、250℃以上である、請求項1に記載の仮止め接着剤。 The temporary fixing adhesive according to claim 1, wherein the compound containing silicon atoms has a 10% thermal mass reduction temperature of 250 ° C or higher when the temperature is increased from 25 ° C at 20 ° C / min.
  3.  前記エラストマーXのJIS K6253の方法に従いタイプAデュロメーターで測定した硬度が83以上である、請求項1または2に記載の仮止め接着剤。 The temporary fixing adhesive according to claim 1 or 2, wherein the elastomer X has a hardness measured by a type A durometer according to the method of JIS K6253 of 83 or more.
  4.  さらに、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYを含む、請求項1~3のいずれか1項に記載の仮止め接着剤。 The temporary fixing adhesive according to any one of claims 1 to 3, further comprising an elastomer Y containing a repeating unit derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units.
  5.  前記エラストマーXと、前記エラストマーYとの質量比が、5:95~95:5である、請求項4に記載の仮止め接着剤。 The temporary adhesive according to claim 4, wherein the mass ratio of the elastomer X and the elastomer Y is 5:95 to 95: 5.
  6.  前記仮止め接着剤に含まれるエラストマーの少なくとも1種が、25℃から、20℃/分で昇温した5%熱質量減少温度が、250℃以上である、請求項1~5のいずれか1項に記載の仮止め接着剤。 The 5% thermal mass reduction temperature at which at least one of the elastomers contained in the temporary adhesive is heated from 25 ° C. at 20 ° C./min is 250 ° C. or higher. Temporary fixing adhesive according to item.
  7.  前記仮止め接着剤に含まれるエラストマーの少なくとも1種の、不飽和二重結合量が、7mmol/g以下である、請求項1~6のいずれか1項に記載の仮止め接着剤。 The temporary fixing adhesive according to any one of claims 1 to 6, wherein an amount of unsaturated double bonds of at least one of the elastomers contained in the temporary fixing adhesive is 7 mmol / g or less.
  8.  前記仮止め接着剤に含まれるエラストマーの少なくとも1種が、水添物である、請求項1~7のいずれか1項に記載の仮止め接着剤。 The temporary fixing adhesive according to any one of claims 1 to 7, wherein at least one of the elastomers contained in the temporary fixing adhesive is a hydrogenated product.
  9.  前記仮止め接着剤に含まれるエラストマーの少なくとも1種が、ブロック共重合体である、請求項1~8のいずれか1項に記載の仮止め接着剤。 The temporary fixing adhesive according to any one of claims 1 to 8, wherein at least one of the elastomers contained in the temporary fixing adhesive is a block copolymer.
  10.  前記仮止め接着剤に含まれるエラストマーの少なくとも1種が、片末端または両末端がスチレンに由来するブロック共重合体である、請求項1~9のいずれか1項に記載の仮止め接着剤。 The temporary fixing adhesive according to any one of claims 1 to 9, wherein at least one of the elastomers contained in the temporary fixing adhesive is a block copolymer derived from styrene at one end or both ends.
  11.  前記仮止め接着剤中のエラストマーの合計量に対する、シリコン原子を含有する化合物の含有量が0.01質量%以上2.5質量%未満である、請求項1~10のいずれか1項に記載の仮止め接着剤。 The content of the compound containing silicon atoms is 0.01% by mass or more and less than 2.5% by mass with respect to the total amount of elastomer in the temporary fixing adhesive. Temporary adhesive.
  12.  前記シリコン原子を含有する化合物が、ジメチルポリシロキサン、メチルフェニルポリシロキサン、ジフェニルポリシロキサンおよびポリエーテル変性ポリシロキサンから選択される、請求項1~11のいずれか1項記載の仮止め接着剤。 The temporary fixing adhesive according to any one of claims 1 to 11, wherein the compound containing a silicon atom is selected from dimethylpolysiloxane, methylphenylpolysiloxane, diphenylpolysiloxane, and polyether-modified polysiloxane.
  13.  さらに、酸化防止剤および溶剤の少なくとも一方を含む、請求項1~12のいずれか1項に記載の仮止め接着剤。 The temporary adhesive according to any one of claims 1 to 12, further comprising at least one of an antioxidant and a solvent.
  14.  前記仮止め接着剤は、半導体装置製造用の仮止め接着剤である、請求項1~13のいずれか1項に記載の仮止め接着剤。 The temporary adhesive according to any one of claims 1 to 13, wherein the temporary adhesive is a temporary adhesive for manufacturing a semiconductor device.
  15.  請求項1~14のいずれか1項に記載の仮止め接着剤からなる接着層を有する、接着フィルム。 An adhesive film having an adhesive layer made of the temporary fixing adhesive according to any one of claims 1 to 14.
  16.  請求項1~14のいずれか1項に記載の仮止め接着剤からなる接着層と、支持体とを有する接着性支持体。 An adhesive support comprising an adhesive layer comprising the temporary fixing adhesive according to any one of claims 1 to 14 and a support.
  17.  支持体と、請求項1~14のいずれか1項に記載の仮止め接着剤からなる接着層と、基材を有する積層体。 A laminate comprising a support, an adhesive layer comprising the temporary fixing adhesive according to any one of claims 1 to 14, and a substrate.
  18.  前記接着層が前記支持体の表面に位置し、前記基材が前記接着層の前記支持体とは反対側の表面に位置する、請求項17に記載の積層体。 The laminate according to claim 17, wherein the adhesive layer is located on a surface of the support, and the base material is located on a surface of the adhesive layer opposite to the support.
  19.  前記支持体と、前記接着層と、前記基材が、前記順に積層しており、かつ、前記支持体と前記接着層の間に、前記接着層とは組成が異なる第2の接着層を有する、請求項17に記載の積層体。 The support, the adhesive layer, and the base material are laminated in the order described above, and a second adhesive layer having a composition different from that of the adhesive layer is provided between the support and the adhesive layer. The laminate according to claim 17.
  20.  前記支持体と、前記接着層と、前記基材が、前記順に積層しており、かつ、前記接着層と前記基材の間に前記接着層とは組成が異なる第2の接着層を有する、請求項17に記載の積層体。 The support, the adhesive layer, and the base material are laminated in the order described above, and a second adhesive layer having a composition different from that of the adhesive layer is provided between the adhesive layer and the base material. The laminate according to claim 17.
  21.  前記第2の接着層が、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含む、請求項19または20に記載の積層体。 21. The laminate according to claim 19 or 20, wherein the second adhesive layer contains an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units.
  22.  前記第2の接着層が、スチレン由来の繰り返し単位を全繰り返し単位中に10質量%以上50質量%未満の割合で含有するエラストマーYを含む、請求項19~21のいずれか1項に記載の積層体。 The second adhesive layer according to any one of claims 19 to 21, wherein the second adhesive layer includes an elastomer Y containing a repeating unit derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all repeating units. Laminated body.
  23.  前記第2の接着層における、25℃で液体状であって、シリコン原子を含有する化合物の含有量は、前記接着層に含まれる、25℃で液体状であって、シリコン原子を含有する化合物の含有量の10質量%以下である、請求項19~22のいずれか1項に記載の積層体。 The content of the compound that is liquid at 25 ° C. and contains silicon atoms in the second adhesive layer is the compound that is liquid at 25 ° C. and contains silicon atoms contained in the adhesive layer The laminate according to any one of claims 19 to 22, which is 10 mass% or less of the content of.
  24.  前記基材が、デバイスウエハである、請求項17~23のいずれか1項に記載の積層体。 The laminate according to any one of claims 17 to 23, wherein the substrate is a device wafer.
  25.  請求項1~14のいずれか1項に記載の仮止め接着剤と、スチレン由来の繰り返し単位を全繰り返し単位中に50質量%以上95質量%以下の割合で含有するエラストマーXを含み、かつ、前記仮止め接着剤とは組成が異なる第2の接着剤を有するキット。 A temporary fixing adhesive according to any one of claims 1 to 14 and an elastomer X containing a repeating unit derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, and A kit having a second adhesive having a composition different from that of the temporary fixing adhesive.
PCT/JP2016/066089 2015-06-01 2016-06-01 Adhesive for temporary fixing, adhesive film, adhesive supporting body, laminate and kit WO2016194917A1 (en)

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