WO2016188395A1 - 基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体 - Google Patents

基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体 Download PDF

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WO2016188395A1
WO2016188395A1 PCT/CN2016/083060 CN2016083060W WO2016188395A1 WO 2016188395 A1 WO2016188395 A1 WO 2016188395A1 CN 2016083060 W CN2016083060 W CN 2016083060W WO 2016188395 A1 WO2016188395 A1 WO 2016188395A1
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refractive index
photonic crystal
rotating
square column
square
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欧阳征标
陈治良
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Shenzhen University
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Shenzhen University
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Definitions

  • the present invention relates to a wide absolute forbidden band two-dimensional photonic crystal, and more particularly to a two-dimensional square lattice photonic crystal based on a cross link and a rotating hollow square column.
  • a photonic crystal is a material structure in which a dielectric material is periodically arranged in a space, and is usually an artificial crystal composed of two or more materials having different dielectric constants.
  • Photonic crystals with absolute forbidden bands can change the interaction of the field with matter by controlling spontaneous emission and improve the performance of the optics. These photonic crystals can be used in semiconductor lasers, solar cells, high quality resonators and filters.
  • a large photonic band gap can be used to fabricate: optical waveguides, liquid crystal photonic crystal fibers, negative refractive index imaging, defect mode photonic crystal lasers, and defect cavities.
  • Large photonic crystals are absolutely forbidden to suppress spontaneous emission in defect mode photonic crystal lasers, especially in the case of a wide range of spontaneous emission spectra. If we want to obtain a photonic crystal resonator with a narrow resonant peak, a larger photonic crystal must be absolutely forbidden.
  • the absolute band gap of polarization-independent photonic crystals is very important. It is precisely because many devices of photonic crystals use photonic band gaps, scientists all over the world have sought to design photonic crystal structures with larger absolute forbidden bands.
  • the two-dimensional square lattice photonic crystal based on the cross link and the rotating hollow square column of the present invention comprises a high refractive index dielectric column and a low refractive index background dielectric column; the photonic crystal structure is arranged by a cell in a square lattice;
  • the lattice constant of the square lattice photonic crystal is a;
  • the cells of the square lattice photonic crystal are composed of a high refractive index rotating hollow square pillar, a cross plate dielectric rod and a background medium; an outer contour of the hollow square pillar
  • the line is a first rotating square column, the rotation angle ⁇ is 45°-65°, and the side length b is 0.6a-0.75a;
  • the hollow portion of the hollow square column is a second rotating square column, and the rotation angle ⁇ thereof.
  • side length c is 0.33a ⁇ 0.5a; the first rotating square column and cross plate dielectric rod Connected; the cross-plate dielectric rod is located at an intermediate portion of the square of the square lattice; the cross-plate dielectric rod has different widths in the horizontal direction and the vertical direction; the width d of the horizontal flat dielectric rod is 0.01a to 0.03a; the width e of the vertical flat plate dielectric rod is 0.01a to 0.03a.
  • the high refractive index medium is silicon, gallium arsenide, titanium dioxide or a high refractive index medium having a refractive index greater than 2.
  • the high refractive index dielectric material is silicon and has a refractive index of 3.4.
  • the background medium is a low refractive index medium.
  • the low refractive index background medium is air, vacuum, magnesium fluoride, silicon dioxide or a medium having a refractive index lower than 1.6.
  • the high refractive index dielectric material is silicon, and the low refractive index dielectric material is air;
  • the rotation angle of the first rotating square column is 45° ⁇ 65°, and the side length thereof is 0.6a ⁇ b ⁇ 0.75a
  • the rotation angle of the second rotating square column is 25° ⁇ 50°, and the side length thereof is 0.33a ⁇ c ⁇ 0.5a;
  • the width of the horizontal flat dielectric rod is 0.01a ⁇ d ⁇ 0.03a;
  • the width of the vertical direction flat dielectric rod is 0.01a ⁇ e ⁇ 0.03a; the absolute forbidden band relative value of the photonic crystal structure is greater than 10%.
  • the high refractive index dielectric material is silicon, and the low refractive index dielectric material is air;
  • the rotation angle ⁇ of the first rotating square column is 60.04°, and the side length b is 0.6927a; the second rotating square pillar
  • the rotation angle ⁇ is 27.348°, the side length c is 0.45344a;
  • the width d of the horizontal flat dielectric rod is 0.0216a;
  • the width e of the vertical flat dielectric rod is 0.0256a;
  • the absolute forbidden band has a relative value of 19.51%.
  • the two-dimensional square lattice photonic crystal based on the cross link and the rotating hollow square column of the invention can be widely used in the design of large-scale integrated optical path. Compared with the prior art, it has the following advantages:
  • the photonic crystal structure of the present invention has a very large absolute band gap, which can bring greater convenience and flexibility to the design and manufacture of a photonic crystal device.
  • the optical path is easy to connect and couple between different optical devices and between different optical paths.
  • the square lattice structure can make the optical path simple and easy to improve the integration of the optical path.
  • FIG. 1 is a schematic view showing the cell structure of a two-dimensional square lattice photonic crystal based on a cross link and a rotating hollow square column of the present invention.
  • Figure 2 is a cross-sectional view showing the structure of the parameter taken by the auxiliary line shown in Figure 1.
  • FIG. 3 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 1.
  • FIG. 3 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 1.
  • FIG. 4 is a structural diagram of a photonic band corresponding to the cell parameter value in the second embodiment.
  • FIG. 5 is a structural diagram of a photonic band corresponding to the cell parameter value in Embodiment 3.
  • FIG. 5 is a structural diagram of a photonic band corresponding to the cell parameter value in Embodiment 3.
  • FIG. 6 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 4.
  • FIG. 7 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 5.
  • FIG. 8 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 6.
  • FIG. 9 is a structural diagram of a photonic band corresponding to the value of the cell parameter in the seventh embodiment.
  • FIG. 10 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 8.
  • FIG. 11 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 9.
  • FIG. 12 is a structural diagram of a photonic band corresponding to the cell parameter value in Embodiment 10.
  • Figure 13 is a diagram showing the structure of a photonic band corresponding to the cell parameter value in the eleventh embodiment.
  • Figure 14 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 12.
  • Fig. 15 is a view showing the structure of a photonic band corresponding to the value of the cell parameter in the thirteenth embodiment.
  • Figure 16 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 14.
  • Figure 17 is a diagram showing the structure of a photonic band corresponding to the cell parameter value in the fifteenth embodiment.
  • Figure 18 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 16.
  • Fig. 19 is a view showing the structure of a photonic band corresponding to the cell parameter value in the embodiment 17.
  • Figure 20 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 18.
  • the two-dimensional square lattice photonic crystal based on the cross link and the rotating hollow square column of the present invention comprises a high refractive index dielectric column, a cross plate dielectric rod and a low refractive index background dielectric column;
  • the photonic crystal structure is composed of a element.
  • the cells are arranged in a square lattice; the cells of the square lattice photonic crystal are composed of a high refractive index rotating hollow square column, a cross plate dielectric rod and a background medium, and the background medium is a low refractive index medium, and the crystal of the square lattice photonic crystal
  • the lattice constant is a; as shown in FIG.
  • the outer contour line of the hollow square column of the present invention is a first rotating square column, and the rotation angle ⁇ of the first rotating square column is 45° to 65°, and the side length b is 0.6. a ⁇ 0.75a;
  • the hollow portion of the hollow square column of the present invention has a second rotating square column, the second rotating square column has a rotation angle ⁇ of 25° to 50°, and a side length c of 0.33a to 0.5a;
  • the first rotating square pillar is connected with the cross plate dielectric rod;
  • the cross flat dielectric rod is located at an intermediate portion of the square lattice square edge;
  • the cross flat dielectric rod has horizontal and vertical rods Different widths; the width d of the flat dielectric rod in the horizontal direction is 0.01a to 0.03a; and the width e of the flat dielectric rod in the vertical direction is 0.01a to 0.03a.
  • the high refractive index medium is silicon, gallium arsenide, titanium dioxide or a high refractive index medium having a refractive index greater than 2;
  • the low refractive index background medium is air, vacuum, magnesium fluoride, silicon dioxide or a medium having a refractive index lower than 1.6.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 45°
  • ⁇ 27.348°
  • b 0.6927a
  • c 0.45344a
  • d 0.0216a
  • e 0.0256a.
  • the numerical simulation results of this example are shown in Fig. 3, and the relative absolute value of the large absolute band gap is 6.19%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 55°
  • ⁇ 27.348°
  • b 0.6927a
  • c 0.45344a
  • d 0.0216a
  • e 0.0256a.
  • the numerical simulation results of this embodiment are shown in Fig. 4, and the relative absolute value of the absolute absolute band is 16.04%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 65°
  • ⁇ 27.348°
  • b 0.6927a
  • c 0.45344a
  • d 0.0216a
  • e 0.0256a.
  • the numerical simulation results of this example are shown in Fig. 5, and have a large absolute forbidden band relative value of 17.18%.
  • the numerical simulation results of this example are shown in Fig. 6. It is known that the relative absolute value of the large absolute band gap is 12.4%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 60.04°
  • ⁇ 27.348°
  • b 0.7a
  • c 0.45344a
  • d 0.0216a
  • e 0.0256a.
  • the numerical simulation results of this example are shown in Fig. 7, and the relative absolute value of the absolute absolute band is 19.21%.
  • the numerical simulation results of this example are shown in Fig. 8. It is known that the relative absolute value of the absolute absolute band is 15.75%.
  • the numerical simulation results of this example are as shown in Fig. 9, and have a large absolute forbidden band relative value of 18.5%.
  • the numerical simulation results of this example are shown in Fig. 10, and the relative absolute value of the large absolute forbidden band is 16.63%.
  • the numerical simulation results of this example are shown in Fig. 11 and have a large absolute forbidden band relative value of 11.19%.
  • the numerical simulation results of this embodiment are shown in Fig. 12, and the relative absolute value of the absolute absolute band is 11.64%.
  • the numerical simulation results of this example are shown in Fig. 13, and the relative absolute value of the absolute absolute band is 19.51%.
  • the numerical simulation results of this example are shown in Fig. 14 and have a large absolute forbidden band relative value of 3.3%.
  • the numerical simulation results of this example are shown in Fig. 15 and have a large absolute forbidden band relative value of 19.3%.
  • the numerical simulation results of this example are shown in Fig. 16. It is known that the relative absolute band gap value is 19.31%.
  • the numerical simulation results of this example are shown in Fig. 17, and the relative absolute value of the absolute absolute band is 19.25%.
  • the numerical simulation results of this example are as shown in Fig. 18, and the relative absolute value of the absolute absolute band is 19.24%.
  • the numerical simulation results of this example are as shown in Fig. 19, and have a large absolute forbidden band relative value of 19.346%.
  • the numerical simulation results of this example are shown in Fig. 20, and have a large absolute forbidden band relative value of 19.317%.

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Abstract

一种基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，正方晶格光子晶体的元胞由高折射率旋转空心正方柱、十字平板介质杆和背景介质组成。空心正方柱的外部轮廓线为第一旋转正方柱，其旋转角度为45°～65°，边长为0.6a～0.75a。空心正方柱的空心部位的截面为第二旋转正方柱，其旋转角度为25°～50°，边长为0.33a～0.5a。第一旋转正方柱与十字平板介质杆相连接。十字平板介质杆沿水平方向和竖直方向的杆具有不同的宽度，水平方向平板介质杆的宽度为0.01a～0.03a，竖直方向平板介质杆的宽度为0.01a～0.03a。基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体具有大绝对禁带。

Description

基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体 技术领域
本发明涉及宽绝对禁带二维光子晶体，更具体地说，本发明涉及基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体。
背景技术
1987年，美国贝尔实验室的E.Yablonovitch在研究如何抑制自发辐射和Princeton大学的S.John在研究光子局域时各自独立提出了光子晶体(Photonic Crystal)的概念。光子晶体是一种介电材料在空间中呈周期性排列的物质结构，通常由两种或者两种以上具有不同介电常数的材料构成的人工晶体。
现代光学的主要挑战之一是对光的人工控制，随着光通信和计算机技术的日益发展，对于光信号的控制和操作越发的重要。由于光子晶体具有可以使某一特定频率和特定方向的光通过或者禁止这一性质，因而对光子晶体的研究备受人们的关注。
因为绝对禁带中的电磁场模式是完全不存在的，所以当电子能带与光子晶体绝对禁带重叠时，自发辐射就被抑制了。拥有绝对禁带的光子晶体可以通过控制自发辐射来改变场与物质的相互作用以及提高光学器件的性能。这些光子晶体可以应用在半导体激光器，太阳能电池，高品质谐振腔以及滤波器上。
光子晶体元胞中介电材料的分布对于禁带有着强烈的影响，并且禁带的选择对于光子晶体的应用有着很大的影响，特别是大的绝对禁 带对于宽带信号的控制是非常有效的。
对于频率处在绝对禁带中的光，无论偏振态和波矢如何，都不可能通过。拥有大光子禁带可以用来制作：光波导，液晶光子晶体光纤、负折射率成像、缺陷模式的光子晶体激光器以及缺陷腔。大的光子晶体绝对禁带可以在缺陷模式的光子晶体激光器中抑制自发辐射，尤其是在自发辐射光谱范围很宽的情况下。如果我们想得到拥有窄谐振峰的光子晶体谐振腔时，较大的光子晶体绝对禁带是必需的。在各种光学器件中，偏振无关的光子晶体绝对禁带是非常重要的。正是因为光子晶体的许多器件都要利用光子禁带，所以世界各国的科学家都力求设计出具有更大的绝对禁带的光子晶体结构。
发明内容
本发明的目的是克服现有技术的不足之处，提供一种易于光路集成，且具有大的绝对禁带相对值的二维正方晶格光子晶体结构。
本发明的目的通过下述技术方案予以实现。
本发明的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体包括高折射率介质柱和低折射率背景介质柱；所述光子晶体结构由元胞按正方晶格排列而成；所述正方晶格光子晶体的晶格常数为a；所述正方晶格光子晶体的元胞由高折射率旋转空心正方柱、十字平板介质杆和背景介质组成；所述空心正方柱的外部轮廓线为第一旋转正方柱，其旋转角度α为45°～65°，边长b为0.6a～0.75a；所述空心正方柱的空心部位的截面为第二旋转正方柱，其旋转角度β为25°～50°，边长c为0.33a～0.5a；所述第一旋转正方柱与十字平板介质杆 相连接；所述十字平板介质杆位于正方晶格正方形边缘的中间部位；所述十字平板介质杆沿水平方向和竖直方向的杆具有不同的宽度；所述水平方向平板介质杆的宽度d为0.01a～0.03a；所述竖直方向平板介质杆的宽度e为0.01a～0.03a。
所述高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质。
所述高折射率介质材料为硅，其折射率为3.4。
所述背景介质为低折射率介质。
所述低折射率背景介质为空气、真空、氟化镁、二氧化硅或者折射率低于1.6的介质。
所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度为45°<α<65°，其边长为0.6a<b<0.75a；所述第二旋转正方柱的旋转角度为25°<β<50°，其边长为0.33a<c<0.5a；所述水平方向平板介质杆的宽度为0.01a<d<0.03a；所述竖直方向平板介质杆的宽度为0.01a<e<0.03a；所述光子晶体结构的绝对禁带相对值大于10％。
所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度α为60.04°，其边长b为0.6927a；所述第二旋转正方柱的旋转角度β为27.348°，其边长c为0.45344a；所述水平方向平板介质杆的宽度d为0.0216a；所述竖直方向平板介质杆的宽度e为0.0256a；所述光子晶体结构的绝对禁带相对值为19.51％。
本发明的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，可广泛应用于大规模集成光路的设计中。它与现有技术相比，有如下优点：
(1)本发明光子晶体结构具有非常大的绝对禁带，可以为光子晶体器件的设计和制造带来更大的方便和灵活性。
(2)光子晶体集成光路中，光路中不同光学器件之间以及不同光路之间易于连接和耦合，采用正方晶格结构可以使光路简洁，且易于提高光路的集成度。
(3)设计简洁，易于制作，降低了制作成本。
附图说明
图1为本发明的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体的元胞结构示意图。
图2为图1所示采用辅助线的参数结构截面图。
图3为实施例1采用元胞参数值所对应的光子带结构图。
图4为实施例2采用元胞参数值所对应的光子带结构图。
图5为实施例3采用元胞参数值所对应的光子带结构图。
图6为实施例4采用元胞参数值所对应的光子带结构图。
图7为实施例5采用元胞参数值所对应的光子带结构图。
图8为实施例6采用元胞参数值所对应的光子带结构图。
图9为实施例7采用元胞参数值所对应的光子带结构图。
图10为实施例8采用元胞参数值所对应的光子带结构图。
图11为实施例9采用元胞参数值所对应的光子带结构图。
图12为实施例10采用元胞参数值所对应的光子带结构图。
图13为实施例11采用元胞参数值所对应的光子带结构图。
图14为实施例12采用元胞参数值所对应的光子带结构图。
图15为实施例13采用元胞参数值所对应的光子带结构图。
图16为实施例14采用元胞参数值所对应的光子带结构图。
图17为实施例15采用元胞参数值所对应的光子带结构图。
图18为实施例16采用元胞参数值所对应的光子带结构图。
图19为实施例17采用元胞参数值所对应的光子带结构图。
图20为实施例18采用元胞参数值所对应的光子带结构图。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细阐述：
如图1所示，本发明的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体包括高折射率介质柱、十字平板介质杆和低折射率背景介质柱；光子晶体结构由元胞按正方晶格排列而成；正方晶格光子晶体的元胞由高折射率旋转空心正方柱、十字平板介质杆和背景介质组成，背景介质为低折射率介质，正方晶格光子晶体的晶格常数为a；如图2所示，本发明空心正方柱的外部轮廓线为第一旋转正方柱，该第一旋转正方柱的旋转角度α为45°～65°，其边长b为0.6a～0.75a；本发明空心正方柱的空心部位的截面为第二旋转正方柱，该第二旋转正方柱的旋转角度β为25°～50°，其边长c为0.33a～0.5a；第一旋转正方柱与十字平板介质杆相连接；十字平板介质杆位于正方晶格正方形边缘的中间部位；十字平板介质杆沿水平方向和竖直方向的杆具有 不同的宽度；水平方向平板介质杆的宽度d为0.01a～0.03a；竖直方向平板介质杆的宽度e为0.01a～0.03a。高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质；低折射率背景介质为空气、真空、氟化镁、二氧化硅或者折射率低于1.6的介质。
实施例1
高折射率材料采用硅，低折射率材料为空气，α＝45°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图3所示可知，具有大绝对禁带相对值为6.19％。
实施例2
高折射率材料采用硅，低折射率材料为空气，α＝55°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图4所示可知，具有大绝对禁带相对值为16.04％。
实施例3
高折射率材料采用硅，低折射率材料为空气，α＝65°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图5所示可知，具有大绝对禁带相对值为17.18％。
实施例4
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图6所示可知，具有大绝对禁带相对值为12.4％。
实施例5
高折射率材料采用硅，低折射率材料为空气，α＝60.04°， β＝27.348°，b＝0.7a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图7所示可知，具有大绝对禁带相对值为19.21％。
实施例6
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.75a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图8所示可知，具有大绝对禁带相对值为15.75％。
实施例7
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝25°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图9所示可知，具有大绝对禁带相对值为18.5％。
实施例8
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝37°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图10所示可知，具有大绝对禁带相对值为16.63％。
实施例9
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝50°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图11所示可知，具有大绝对禁带相对值为11.19％。
实施例10
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.33a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图12所示可知，具有大绝对禁带相对值为11.64％。
实施例11
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图13所示可知，具有大绝对禁带相对值为19.51％。
实施例12
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.5a，d＝0.0216a，e＝0.0256a。本实施例的数值模拟结果如图14所示可知，具有大绝对禁带相对值为3.3％。
实施例13
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.01a，e＝0.0256a。本实施例的数值模拟结果如图15所示可知，具有大绝对禁带相对值为19.3％。
实施例14
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.015a，e＝0.0256a。本实施例的数值模拟结果如图16所示可知，具有大绝对禁带相对值为19.31％。
实施例15
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.03a，e＝0.0256a。本实施例的数值模拟结果如图17所示可知，具有大绝对禁带相对值为19.25％。
实施例16
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.01a。本实施例的数值模拟结果如图18所示可知，具有大绝对禁带相对值为19.24％。
实施例17
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.015a。本实施例的数值模拟结果如图19所示可知，具有大绝对禁带相对值为19.346％。
实施例18
高折射率材料采用硅，低折射率材料为空气，α＝60.04°，β＝27.348°，b＝0.6927a，c＝0.45344a，d＝0.0216a，e＝0.03a。本实施例的数值模拟结果如图20所示可知，具有大绝对禁带相对值为19.317％。
以上之详细描述仅为清楚理解本发明，而不应将其看作是对本发明不必要的限制，因此对本发明的任何改动对本领域中的技术熟练的人是显而易见的。

Claims (7)

  1. 一种基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，其特征在于，它包括高折射率介质柱、十字平板介质杆和低折射率背景介质柱；所述光子晶体结构由元胞按正方晶格排列而成；所述正方晶格光子晶体的晶格常数为a；所述正方晶格光子晶体的元胞由高折射率旋转空心正方柱、十字平板介质杆和背景介质组成；所述空心正方柱的外部轮廓线为第一旋转正方柱，其旋转角度α为45°～65°，边长b为0.6a～0.75a；所述空心正方柱的空心部位的截面为第二旋转正方柱，其旋转角度β为25°～50°，边长c为0.33a～0.5a；所述第一旋转正方柱与十字平板介质杆相连接；所述十字平板介质杆位于正方晶格正方形边缘的中间部位；所述十字平板介质杆沿水平方向和竖直方向的杆具有不同的宽度；所述水平方向平板介质杆的宽度d为0.01a～0.03a；所述竖直方向平板介质杆的宽度e为0.01a～0.03a。
  2. 按照权利要求1所述的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，其特征在于，所述高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质。
  3. 按照权利要求2所述的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，其特征在于，所述高折射率介质材料为硅，其折射率为3.4。
  4. 按照权利要求1所述的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，其特征在于，所述背景介质为低折射率介质。
  5. 按照权利要求1所述的基于十字连杆与旋转空心正方柱的二 维正方晶格光子晶体，其特征在于，所述低折射率背景介质为空气、真空、氟化镁、二氧化硅或者折射率低于1.6的介质。
  6. 按照权利要求1或2或5所述的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，其特征在于，所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度为45°<α<65°，其边长为0.6a<b<0.75a；所述第二旋转正方柱的旋转角度为25°<β<50°，其边长为0.33a<c<0.5a；所述水平方向平板介质杆的宽度为0.01a<d<0.03a；所述竖直方向平板介质杆的宽度为0.01a<e<0.03a；所述光子晶体结构的绝对禁带相对值大于10％。
  7. 按照权利要求1或2或5所述的基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体，其特征在于：所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度α为60.04°，其边长b为0.6927a；所述第二旋转正方柱的旋转角度β为27.348°，其边长c为0.45344a；所述水平方向平板介质杆的宽度d为0.0216a；所述竖直方向平板介质杆的宽度e为0.0256a；所述光子晶体结构的绝对禁带相对值为19.51％。
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