WO2016187978A1 - 有机发光显示装置 - Google Patents

有机发光显示装置 Download PDF

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Publication number
WO2016187978A1
WO2016187978A1 PCT/CN2015/088016 CN2015088016W WO2016187978A1 WO 2016187978 A1 WO2016187978 A1 WO 2016187978A1 CN 2015088016 W CN2015088016 W CN 2015088016W WO 2016187978 A1 WO2016187978 A1 WO 2016187978A1
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Prior art keywords
organic light
pixel electrode
light emitting
display device
electrode
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English (en)
French (fr)
Inventor
姚江波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/775,833 priority Critical patent/US9947888B2/en
Publication of WO2016187978A1 publication Critical patent/WO2016187978A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to an organic light emitting display device, and more particularly to an organic light emitting display device that displays an image of uniform brightness.
  • An organic light emitting display device displays an image using an organic light emitting diode that generates light by recombination between electrons and holes.
  • organic light-emitting display devices range from personal portable devices such as MP3 players and mobile phones to television sets because of their pleasing characteristics such as wide viewing angle, high contrast, low response time, and low power consumption.
  • a conventional organic light emitting display device includes a first substrate having an organic light emitting diode and a second substrate facing the first substrate to protect the organic light emitting diode.
  • the organic light emitting diode includes an organic light emitting layer that emits light and first and second pixel electrodes that face each other with the organic light emitting layer interposed therebetween.
  • Existing organic light emitting display devices include a top emission type, a bottom emission type, and a double side emission type.
  • the top emission type light emitted from the organic light emitting diode is irradiated toward the second substrate.
  • the organic light emitting diode of the top emission type organic light emitting display device includes a first electrode having a light reflecting structure and a second electrode of a light transflective structure.
  • the second electrode typically has a relatively thin thickness and is formed of a transparent conductive material to have semi-transmissive properties.
  • the second electrode is relatively thin, there is usually a height difference in the edge region and the central portion of the display panel, which is liable to cause a voltage drop. As a result, the image produced by the organic light-emitting display device is made to exhibit unevenness in brightness on the entire device.
  • the present invention provides an organic light emitting display device.
  • the organic light emitting display device of the present invention can increase the contact surface of the second pixel electrode and the auxiliary electrode, and reduce the resistance of the second pixel electrode.
  • Driving voltage of the pixel at the edge of the small display panel and driving of the pixel of the central portion The voltage difference of the voltage is such that the image displayed by the organic light-emitting display device is uniform in brightness throughout the organic light-emitting display device.
  • an organic light emitting display device includes: a thin film transistor on a first substrate; a first auxiliary electrode on the first substrate; and a second auxiliary electrode, And a first auxiliary electrode is electrically connected to the first auxiliary electrode; the light emitting unit is located on the thin film transistor and is electrically connected to the thin film transistor, the light emitting unit includes a first pixel electrode, a second pixel electrode, and the first pixel electrode and the first pixel electrode An organic light emitting layer between the two pixel electrodes, wherein the second pixel electrode comprises: a first region on the second auxiliary electrode and electrically connected to the second auxiliary electrode; and a second region on the organic light emitting layer, the first region Connected to the second region, wherein the organic light-emitting layer is separated from the second auxiliary electrode by a portion of the first region of the second pixel electrode between the organic light-emitting layer and the second auxiliary electrode, wherein The top surface of the first region of the two pixel electrode is
  • the organic light emitting display device further includes: an organic insulating layer between the first pixel electrode and the organic light emitting layer and the second auxiliary electrode and separated from the second auxiliary electrode, wherein the second The second region of the pixel electrode covers the organic insulating layer.
  • the organic insulating layer is separated from the second auxiliary electrode by a portion of the first region of the second pixel electrode between the organic light emitting layer and the second auxiliary electrode.
  • the organic insulating layer is adjacent to a side surface of the first pixel electrode to insulate the first pixel electrode from the second pixel electrode from each other.
  • the organic insulating layer is adjacent to a side surface of the organic light emitting layer.
  • the first pixel electrode and the second auxiliary electrode are formed on the same layer.
  • the thickness of the first region of the second pixel electrode is thicker than the thickness of the second region of the second pixel electrode.
  • the organic light emitting display device further includes a passivation layer between the thin film transistor and the light emitting unit.
  • the light emitting unit, the organic insulating layer, and the second auxiliary electrode are formed on the passivation layer.
  • the organic insulating layer is located between the passivation layer and the second pixel electrode, and separates the organic light emitting layer and the first pixel electrode from the second auxiliary electrode.
  • FIG. 1 is a schematic cross-sectional view showing a structure of a pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.
  • first, second, etc. may be used to describe various elements, components, regions, layers and/or portions, these elements, components, regions, layers and/or portions are not limited to these Limitation of terminology. These terms are only used to distinguish one element, component, region, layer, and / Thus, a first element, component, region, layer, or section, which is discussed below, may be referred to as a second element, component, region, layer, or section, without departing from the teachings of the invention.
  • FIG. 1 is a schematic cross-sectional view showing a structure of a pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.
  • an organic light emitting display device includes a first substrate 10, a thin film transistor 20, a light emitting unit 30, and an encapsulation unit (not shown) covering the light emitting unit 30. And the second substrate 40.
  • the first substrate 10 may be a transparent glass substrate having SiO 2 as a main component, or a substrate of various suitable materials such as a plastic substrate or a metal substrate may be used. Additionally, the substrate 10 can be formed from a suitable plastic material having properties that enable a curved surface. However, the embodiment is not limited thereto, and various materials having suitable flexibility may be used.
  • the second substrate 40 may be opposite to the first substrate 10, and the second substrate 40 may be made of a light transmissive material and may be the same material as the first substrate 10, for example, may include an insulating substrate of glass, polymer, or the like, but The invention is not limited to this.
  • the first substrate 10 and the second substrate 40 may be attached to each other by the sealant 80 and sealed to each other.
  • the thin film transistor 20, the light emitting unit 30, and the encapsulation unit may be located between the first substrate 10 and the second substrate 40.
  • the first substrate 10 and the second substrate 40 may protect the thin film transistor 20 and the light emitting unit 30 from external influences.
  • a thin film transistor 20 for driving the light emitting unit 30 is formed on the first substrate 10.
  • the thin film transistor 20 may include a gate electrode, a source electrode, and a drain electrode (not shown), and the light emitting unit 30 may be driven by transmitting a signal to the light emitting unit 30.
  • the light emitting unit 30 can emit light according to a signal received from the thin film transistor 20.
  • the first auxiliary electrode 61 may be disposed on the first substrate 10, and the first auxiliary electrode 61 may be formed on the same layer as the thin film transistor 20.
  • the thin film transistor 20 is directly disposed on the first substrate 10 in the drawings of the present invention, the exemplary embodiment of the present invention is not limited thereto.
  • a buffer layer may be disposed on the first substrate 10 to prevent infiltration of moisture or outside air, and the thin film transistor 20 is disposed on the buffer layer.
  • a passivation layer 50 is disposed on the thin film transistor 20 and the first auxiliary electrode 61 that drive the light emitting unit 30 to cover the thin film transistor 20 and the first auxiliary electrode 61, thereby protecting the thin film transistor 20 and the first auxiliary electrode 61 therebelow.
  • the thin film transistor 20 and the first auxiliary electrode 61 are planarized.
  • the passivation layer 50 can be formed in various suitable structures.
  • the passivation layer 50 may be formed in a single layer, a double layer, or more layers. In other words, various forms of modification can be made to the passivation layer 50.
  • the light emitting unit 30 may be located on the passivation layer 50 and may be opposed to the thin film transistor 20 that drives the light emitting unit 30, but the exemplary embodiments of the present invention are not limited thereto.
  • the light emitting unit 30 may include a first pixel electrode 31, a second pixel electrode 33, and an organic layer located between the first pixel electrode 31 and the second pixel electrode 33 on the passivation layer 50.
  • Light emitting layer 32 In an exemplary embodiment of the present invention, the first pixel electrode 31 is electrically connected by a contact hole 51 penetrating the passivation layer 50. To the thin film transistor 20.
  • the second auxiliary electrode 62 may be disposed on the passivation layer 50 and overlapped with the first auxiliary electrode 61 located on the first substrate 10.
  • the second auxiliary electrode 62 may be in contact with the first auxiliary electrode 61 through the contact hole 52 penetrating the passivation layer 50.
  • the first pixel electrode 31 of the light emitting unit 30 may be formed on the same layer as the second auxiliary electrode 62.
  • the first pixel electrode 31 and the second auxiliary electrode 62 may be formed on the passivation layer 50 and spaced apart from each other.
  • the first pixel electrode 31 of the light emitting unit 30 may be electrically connected to the thin film transistor 20 that drives the light emitting unit 30, for example, may be electrically connected to a drain electrode (not shown) of the thin film transistor 20.
  • the organic light emitting layer 32 may be located on the first pixel electrode 31 and include a light emitting material corresponding to emitting red light, green light, and blue light.
  • the organic light emitting layer 32 may be opposed to the first pixel electrode 31, but the present invention is not limited thereto.
  • the organic light-emitting layer 32 is not overlapped with the second auxiliary electrode 62 and is spaced apart from the second auxiliary electrode 62 by a certain distance.
  • the organic insulating layer 70 may be located on the passivation layer 50 and formed on the side of the first pixel electrode 31 and the organic light emitting layer 32 against the first pixel electrode 31 and the organic light emitting layer 32.
  • the organic insulating layer 70 may be formed between the organic light emitting layer 32 and the first pixel electrode 31 and the second pixel electrode 33, and is spaced apart from the second auxiliary electrode 62.
  • the shape of the organic insulating layer 70 may be a rectangular parallelepiped, but is not limited thereto, and may be specifically set according to actual needs.
  • the second pixel electrode 33 may be located on the organic light emitting layer 32, the organic insulating layer 70, the passivation layer 50, and the second auxiliary electrode 62.
  • the organic insulating layer 70 may be separated from the second auxiliary electrode 62 by the second pixel electrode 33 located on the passivation layer 50.
  • the second pixel electrode 33 may cover the upper surface and the side surface of the second auxiliary electrode 33 and separate the organic insulating layer 70 from the second auxiliary electrode 62. Therefore, the second pixel electrode 33 can be electrically connected to the second auxiliary electrode 62 and receive a voltage through the first auxiliary electrode 61 and the second auxiliary electrode 62.
  • the organic insulating layer 70 blocks the organic light emitting layer 32 from contacting the second auxiliary electrode 62, and blocks the first pixel electrode 31 from being electrically connected to the second pixel electrode 33, and pre-treating the second pixel electrode 33 Leave a gap.
  • the second pixel electrode 33 may be located between the organic insulating layer 70 and the second auxiliary electrode 62 and in contact with the second auxiliary electrode 62 to increase the contact surface of the second pixel electrode 33 and the second auxiliary electrode 62, thereby reducing resistance .
  • the first pixel electrode 31 and the second pixel electrode 33 may be overlapped with each other, and are insulated from each other by having the organic light emitting layer 32 between the first pixel electrode 31 and the second pixel electrode 33.
  • the first pixel electrode 31 may be a reflective electrode, or may include a reflective layer to reflect light emitted by the organic light emitting layer 32 toward the second pixel electrode 33.
  • the second pixel electrode 33 may be a transflective electrode, but the invention is not limited thereto, and may be, for example, a transmissive electrode.
  • the second pixel electrode 33 may include a first region 331 and a second region 332 connected to one end of the first region 331.
  • the tops of the first area 331 and the second area 332 may be on the same plane.
  • the second region 332 may be located directly above the organic light emitting layer 32 and the organic insulating layer 70, and the first region 331 may be located above the passivation layer 50 and the second auxiliary electrode 62.
  • the thickness of the first region 331 may be greater than the thickness of the second region 332.
  • the first region and the second region at the second pixel electrode can be prevented
  • a groove between the first region and the second region of the second pixel electrode may be reduced to reduce the resistance between the first region and the second region of the second pixel electrode, thereby reducing the total resistance of the second pixel electrode, thereby reducing
  • the change in the voltage drop of the driving voltage of the pixel of the edge portion of the small display panel and the driving voltage of the pixel of the central portion causes the image produced by the organic light-emitting display device to have uniform brightness throughout the organic light-emitting display device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种有机发光显示装置，包括：薄膜晶体管（20），位于第一基板（10）上；第一辅助电极（61），位于第一基板（10）上；第二辅助电极（62），与第一辅助电极（61）重叠并且与第一辅助电极（61）电连接；发光单元（30），位于薄膜晶体管（20）上并且与薄膜晶体管（20）电连接，发光单元（30）包括第一像素电极（31）、第二像素电极（33）以及位于第一像素电极（31）和第二像素电极（33）之间的有机发光层（32），其中第二像素电极（33）包括：第一区域（331），位于第二辅助电极（62）上并且与第二辅助电极（62）电连接；第二区域（332），位于有机发光层（32）上，其中，有机发光层（32）通过第二像素电极（33）的第一区域（331）中的位于有机发光层（32）和第二辅助电极（62）之间的部分而与第二辅助电极（62）彼此分隔开，其中，第二像素电极（33）的第一区域（331）的顶表面与第二像素电极（33）的第二区域（332）的顶表面在同一平面上。

Description

有机发光显示装置 技术领域
本发明涉及一种有机发光显示装置，更详细地讲，涉及一种显示亮度均匀的图像的有机发光显示装置。
背景技术
近年来，已经开发了诸如液晶显示装置、有机发光显示装置、电润湿显示装置、等离子体显示面板、电泳显示装置等的各种显示装置。有机发光显示装置利用通过电子和空穴之间的复合来产生光的有机发光二极管来显示图像。
有机发光显示装置的应用范围从诸如MP3播放器和移动电话的个人便携式装置到电视机，这是由于这些显示装置具有诸如宽视角、高对比度、低响应时间和低功耗的卓悦的特性。
现有的有机发光显示装置包括具有有机发光二极管的第一基板和面对第一基板以保护有机发光二极管的第二基板。有机发光二极管包括发射光的有机发光层以及彼此面对并且有机发光层置于其间的第一像素电极和第二像素电极。
现有的有机发光显示装置包括顶部发射型、底部发射型和双侧发射型。在顶部发射型中，从有机发光二极管发射的光朝向第二基板照射。顶部发射型有机发光显示装置的有机发光二极管包括具有光反射结构的第一电极和光透反射结构的第二电极。第二电极通常具有相对薄的厚度，并且由透明导电材料形成以具有半透射特性。
在现有技术的顶部发射型有机发光显示装置中，由于第二电极相对薄，因此在显示面板的边缘区域和中心部分通常具有高度差，这容易造成压降。结果，使得有机发光显示装置产生的图像在整个装置上的亮度方面表现出不均匀。
发明内容
为克服现有技术的不足，本发明提供了一种有机发光显示装置，本发明的有机发光显示装置可以加大第二像素电极与辅助电极的接触面，减小第二像素电极的电阻，减小显示面板上边缘部分像素的驱动电压与中心部分像素的驱动 电压的压差，从而使有机发光显示装置显示的图像在整个有机发光显示装置上亮度均匀。
根据本发明的示例性实施例提供了一种有机发光显示装置，所述有机发光显示装置包括：薄膜晶体管，位于第一基板上；第一辅助电极，位于第一基板上；第二辅助电极，与第一辅助电极叠置并且与第一辅助电极电连接；发光单元，位于薄膜晶体管上并且与薄膜晶体管电连接，发光单元包括第一像素电极、第二像素电极以及位于第一像素电极和第二像素电极之间的有机发光层，其中，第二像素电极包括：第一区域，位于第二辅助电极上并且与第二辅助电极电连接；第二区域，位于有机发光层上，第一区域和第二区域相连接，其中，有机发光层通过第二像素电极的第一区域中的位于有机发光层和第二辅助电极之间的部分而与第二辅助电极彼此分隔开，其中，第二像素电极的第一区域的顶表面与第二像素电极的第二区域的顶表面在同一平面上。
在示例性实施例中，所述有机发光显示装置还包括：有机绝缘层，位于第一像素电极和有机发光层与第二辅助电极之间并且与第二辅助电极分隔开，其中，第二像素电极的第二区域覆盖有机绝缘层。
在示例性实施例中，有机绝缘层通过第二像素电极的第一区域中的位于有机发光层和第二辅助电极之间的部分而与第二辅助电极分隔开。
在示例性实施例中，有机绝缘层与第一像素电极的侧表面相邻，以使第一像素电极与第二像素电极彼此绝缘。
在示例性实施例中，有机绝缘层与有机发光层的侧表面相邻。
在示例性实施例中，第一像素电极与第二辅助电极形成在同一层上。
在示例性实施例中，第二像素电极的第一区域的厚度比第二像素电极的第二区域的厚度厚。
在示例性实施例中，所述有机发光显示装置还包括位于薄膜晶体管和发光单元之间的钝化层。
在示例性实施例中，发光单元、有机绝缘层和第二辅助电极形成在钝化层上。
在示例性实施例中，有机绝缘层位于钝化层与第二像素电极之间，并且使有机发光层和第一像素电极与第二辅助电极分隔开。
附图说明
通过参照附图详细地描述本发明的示例性实施例，本发明的上述和其他特征和优势将会变得更加清楚，其中：
图1是示出根据本发明的示例性实施例的有机发光显示装置的像素的结构示意性剖视图。
具体实施方式
现在在下文中将参照附图更充分地描述示例实施例，然而，示例实施例可以以不同的形式来实施，并不应该被解释为限于在此阐述的实施例。相反，提供这些实施例是为了使这公开将是彻底的和完整的，并将把示例性实施方式充分地传达给本领域技术人员。
将理解的是，当元件或层被称作“在”另一元件或层“上”、“连接到”或“结合到”另一元件或层时，它可以直接在另一元件或层上、直接连接到或直接结合到另一元件或层，或者可存在中间元件或中间层。相反，当元件被称作“直接在”另一元件或层上、“直接连接到”或“直接结合到”另一元件或层时，不存在中间元件或中间层。
将理解的是，尽管在这里可使用术语第一、第二等来描述不同的元件、组件、区域、层和/或部分，但是这些元件、组件、区域、层和/或部分并不受这些术语的限制。这些术语仅是用来将一个元件、组件、区域、层和/或部分与另一个元件、组件、区域、层和/或部分区分开来。因此，在不脱离本发明的教导的情况下，下面讨论的第一元件、组件、区域、层或部分可被命名为第二元件、组件、区域、层或部分。
在这里可使用空间相对术语，如“在…下方”、“在…下面”、“下面的”、“在…上方”、“上面的”等，用来轻松地描述如图中所示的一个元件或特征与其它元件或特征的关系。应该理解的是，空间相对术语意在包含除了在附图中描述的方位之外的装置在使用或操作中的不同方位。
图1是示出根据本发明的示例性实施例的有机发光显示装置的像素的结构示意性剖视图。
参照图1，根据本发明的示例性实施例的有机发光显示装置包括第一基板10、薄膜晶体管20、发光单元30、覆盖发光单元30的包封单元(未示出)以 及第二基板40。
第一基板10可以是以SiO2作为主要成分的透明玻璃基板，或者可以使用诸如塑料基板或金属基板等的各种合适材料的基板。另外，基板10可以由具有能够实现弯曲表面的特性的合适塑料材料形成。然而，本实施例不限于此，可以使用具有合适柔性的各种材料。
第二基板40可以与第一基板10相对，第二基板40可以由透光材料制成，并且可以与第一基板10的材料相同，例如，可以包括玻璃、聚合物等的绝缘基板，但本发明不限于此。第一基板10和第二基板40可以通过密封剂80彼此附着并彼此密封。薄膜晶体管20、发光单元30和包封单元可以位于第一基板10和第二基板40之间。第一基板10和第二基板40可以保护薄膜晶体管20和发光单元30免受外部影响。
用于驱动发光单元30的薄膜晶体管20形成在第一基板10上。在本发明的示例性实施例中，薄膜晶体管20可以包括栅电极、源电极和漏电极(未示出)，可以通过向发光单元30传输信号来驱动发光单元30。发光单元30可以根据从薄膜晶体管20接收的信号来发射光。
另外，第一辅助电极61可以设置在第一基板10上，第一辅助电极61可以与薄膜晶体管20形成在同一层上。尽管在本发明的附图中，薄膜晶体管20直接设置在第一基板10上，但是本发明的示例性实施例不限于此。例如，在第一基板10上可以设置有缓冲层，以防止湿气或外部空气的渗入，并且薄膜晶体管20设置在缓冲层上。
此外，钝化层50设置在驱动发光单元30的薄膜晶体管20和第一辅助电极61上，以覆盖薄膜晶体管20和第一辅助电极61，从而保护其下方的薄膜晶体管20和第一辅助电极61并使薄膜晶体管20和第一辅助电极61平面化。
钝化层50可以以各种合适的结构形成。例如，钝化层50可以以单层、双层或更多层来形成。换言之，可以对钝化层50进行各种形式的修改。
发光单元30可以位于钝化层50上，并且可以与驱动发光单元30的薄膜晶体管20相对，但是本发明的示例性实施例不限于此。在本发明的示例性实施例中，发光单元30可以包括位于钝化层50上的第一像素电极31、第二像素电极33以及位于第一像素电极31和第二像素电极33之间的有机发光层32。在本发明的示例性实施例中，第一像素电极31通过贯穿钝化层50的接触孔51电连接 到薄膜晶体管20。
此外，在本发明的示例性实施例中，第二辅助电极62可以设置在钝化层50上，并且与位于第一基板10上的第一辅助电极61叠置。在实施例中，第二辅助电极62可以通过贯穿钝化层50的接触孔52与第一辅助电极61接触。发光单元30的第一像素电极31可以与第二辅助电极62形成在同一层上。在本发明的示例性实施例中，第一像素电极31和第二辅助电极62可以形成在钝化层50上并且彼此分隔开。
如图1中所示，发光单元30的第一像素电极31可以电连接到驱动发光单元30的薄膜晶体管20，例如，可以电连接到薄膜晶体管20的漏电极(未示出)。有机发光层32可以位于第一像素电极31上，并且包含对应于发射红色光、绿色光和蓝色光的发光材料。有机发光层32可以与第一像素电极31彼此相对，但是本发明不限于此。在实施例中，有机发光层32不与第二辅助电极62叠置，并且与第二辅助电极62分隔开一定距离。
有机绝缘层70可以位于钝化层50上，并且与第一像素电极31和有机发光层32抵靠地形成在第一像素电极31和有机发光层32的侧面。在本发明的示例性实施例中，有机绝缘层70可以形成在有机发光层32和第一像素电极31与第二像素电极33之间，并且与第二辅助电极62分隔开。有机绝缘层70的形状可以为长方体，但不限于此，具体可以根据实际需要而进行设置。第二像素电极33可以位于有机发光层32、有机绝缘层70、钝化层50和第二辅助电极62上。
在本发明的示例性实施例中，有机绝缘层70可以通过位于钝化层50上的第二像素电极33而与第二辅助电极62分隔开。第二像素电极33可以覆盖第二辅助电极33的上表面和侧表面，并且使有机绝缘层70与第二辅助电极62分隔开。因此，第二像素电极33可以与第二辅助电极62电连接，并且通过第一辅助电极61和第二辅助电极62接收电压。根据本发明的示例性实施例，有机绝缘层70阻碍有机发光层32与第二辅助电极62接触，并阻碍第一像素电极31与第二像素电极33电连接，以及给第二像素电极33预留空隙。第二像素电极33可以位于有机绝缘层70和第二辅助电极62之间并且与第二辅助电极62接触，以加大第二像素电极33与第二辅助电极62的接触面，从而减小电阻。
第一像素电极31和第二像素电极33可以彼此叠置，并且因第一像素电极31和第二像素电极33之间具有有机发光层32而彼此绝缘。
在根据本发明的示例性实施例中，第一像素电极31可以是反射电极，或者可以包括反射层，以将由有机发光层32发射的光向第二像素电极33反射。第二像素电极33可以是透反射电极，但本发明不限于此，例如，可以是透射电极。
第二像素电极33可以包括第一区域331和与第一区域331的一端连接的第二区域332。第一区域331和第二区域332的顶部可以在同一平面上。第二区域332可以位于与有机发光层32和有机绝缘层70正对的上方，第一区域331可以位于钝化层50和第二辅助电极62上方。第一区域331的厚度可以大于第二区域332的厚度。
根据本发明的示例性实施例，通过使第二像素电极的第一区域与第二区域的顶部齐平，并且通过设置有机绝缘层，可以防止在第二像素电极的第一区域和第二区域之间出现不利于减小第二像素电极的电阻的凹槽，可以减小第二像素电极的第一区域和第二区域之间的电阻，以减小第二像素电极的总电阻，从而减小显示面板边缘部分的像素的驱动电压与中心部分的像素的驱动电压的压降的变化，使有机发光显示装置产生的图像在整个有机发光显示装置上亮度均匀。
虽然已经参照附图描述了本发明的一个或更多个实施例，但本领域的普通技术人员将理解，在不脱离权利要求书及其等同物限定的本发明的精神和范围的情况下，可以在这里进行形式和细节上的各种改变。

Claims (10)

  1. 一种有机发光显示装置，其中，所述有机发光显示装置包括：
    薄膜晶体管，位于第一基板上；
    第一辅助电极，位于第一基板上；
    第二辅助电极，与第一辅助电极叠置并且与第一辅助电极电连接；
    发光单元，位于薄膜晶体管上并且与薄膜晶体管电连接，发光单元包括第一像素电极、第二像素电极以及位于第一像素电极和第二像素电极之间的有机发光层，
    其中，第二像素电极包括：第一区域，位于第二辅助电极上并且与第二辅助电极电连接；第二区域，位于有机发光层上，第一区域和第二区域相连接，
    其中，有机发光层通过第二像素电极的第一区域中的位于有机发光层和第二辅助电极之间的部分而与第二辅助电极彼此分隔开，
    其中，第二像素电极的第一区域的顶表面与第二像素电极的第二区域的顶表面在同一平面上。
  2. 如权利要求1所述的有机发光显示装置，其中，所述有机发光显示装置还包括：
    有机绝缘层，位于第一像素电极和有机发光层与第二辅助电极之间并且与第二辅助电极分隔开，其中，第二像素电极的第二区域覆盖有机绝缘层。
  3. 如权利要求2所述的有机发光显示装置，其中，有机绝缘层通过第二像素电极的第一区域中的位于有机发光层和第二辅助电极之间的部分而与第二辅助电极分隔开。
  4. 如权利要求2所述的有机发光显示装置，其中，有机绝缘层与第一像素电极的侧表面相邻，以使第一像素电极与第二像素电极彼此绝缘。
  5. 如权利要求4所述的有机发光显示装置，其中，有机绝缘层与有机发光层的侧表面相邻。
  6. 如权利要求1所述的有机发光显示装置，其中，第一像素电极与第二辅 助电极形成在同一层上。
  7. 如权利要求6所述的有机发光显示装置，其中，第二像素电极的第一区域的厚度比第二像素电极的第二区域的厚度厚。
  8. 如权利要求2所述的有机发光显示装置，其中，所述有机发光显示装置还包括位于薄膜晶体管和发光单元之间的钝化层。
  9. 如权利要求8所述的有机发光显示装置，其中，发光单元、有机绝缘层和第二辅助电极形成在钝化层上。
  10. 如权利要求9所述的有机发光显示装置，其中，有机绝缘层位于钝化层与第二像素电极之间，并且使有机发光层和第一像素电极与第二辅助电极分隔开。
PCT/CN2015/088016 2015-05-27 2015-08-25 有机发光显示装置 Ceased WO2016187978A1 (zh)

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