WO2016182370A1 - Dispositif d'affichage à points quantiques pouvant être porté et dispositif électronique pouvant être porté le comprenant - Google Patents

Dispositif d'affichage à points quantiques pouvant être porté et dispositif électronique pouvant être porté le comprenant Download PDF

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Publication number
WO2016182370A1
WO2016182370A1 PCT/KR2016/005019 KR2016005019W WO2016182370A1 WO 2016182370 A1 WO2016182370 A1 WO 2016182370A1 KR 2016005019 W KR2016005019 W KR 2016005019W WO 2016182370 A1 WO2016182370 A1 WO 2016182370A1
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WIPO (PCT)
Prior art keywords
quantum dot
layer
wearable
dot pattern
display device
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PCT/KR2016/005019
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English (en)
Korean (ko)
Inventor
김대형
현택환
김재민
심형준
양지웅
Original Assignee
서울대학교산학협력단
기초과학연구원
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Priority claimed from KR1020160057694A external-priority patent/KR101991993B1/ko
Application filed by 서울대학교산학협력단, 기초과학연구원 filed Critical 서울대학교산학협력단
Publication of WO2016182370A1 publication Critical patent/WO2016182370A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Definitions

  • the present invention relates to a wearable quantum dot display device and a wearable electronic device including the same.
  • the smart watch includes a sensor that can be worn like a wrist watch to display information and measure a biological signal.
  • the smart watch has a problem that the screen is small and inconvenient to use and the reliability of the measured biosignal is inferior because the contact with the human skin is not constant.
  • the present invention provides a wearable quantum dot display device.
  • the present invention provides a wearable electronic device including the wearable quantum dot display device.
  • a wearable quantum dot display apparatus includes a display layer, wherein the display layer includes a first insulating layer, a first electrode layer disposed on the first insulating layer, and a first electrode disposed on the first electrode layer.
  • a first charge transfer layer, a quantum dot pattern layer disposed on the first charge transfer layer, a second charge transfer layer disposed on the quantum dot pattern layer, a second electrode layer disposed on the second charge transfer layer, and the second electrode layer And a second insulating layer disposed.
  • the quantum dot pattern layer may be formed by an engraved transfer printing method.
  • the sum of the thicknesses of the first insulating layer, the first electrode layer, the first charge transfer layer, the quantum dot pattern layer, the second charge transfer layer, the second electrode layer, and the second insulation layer may be 3 ⁇ m or less.
  • the sum of the thicknesses of the first electrode layer, the first charge transfer layer, the quantum dot pattern layer, the second charge transfer layer, and the second electrode layer may be 300 nm or less.
  • the quantum dot pattern layer may include at least one of a red quantum dot pattern, a green quantum dot pattern, and a blue quantum dot pattern.
  • the quantum dot pattern layer may be formed of a colloidal nanocrystalline material including one or more of CdSe / ZnS quantum dots, CdSe / CdS / ZnS quantum dots, Cu-In-Se quantum dots, PbS quantum dots, and InP quantum dots.
  • the wearable quantum dot display apparatus may further include an antireflection layer disposed between the second electrode layer and the second insulating layer.
  • the wearable quantum dot display apparatus may further include a signal sensor layer disposed under the first insulating layer and measuring a biosignal.
  • the signal sensor layer may include at least one of an activity measuring sensor, a strain sensor, a heart rate sensor, a PPG sensor, a blood pressure measuring sensor, a temperature sensor, a blood glucose sensor, a pH sensor, and an insulin sensor.
  • the wearable quantum dot display apparatus may further include a touch sensor layer disposed above, inside, or below the display layer.
  • the touch sensor layer may include a touch capacitive touch type, a pressure resistive film type, a surface ultrasonic type, an infrared light type, an integrated tension measuring method, or a piezo effect type touch sensor.
  • the wearable quantum dot display device includes a quantum dot pattern layer, and the quantum dot pattern layer is formed by a negative transfer printing method.
  • the quantum dot pattern layer may include a quantum dot pattern, and the quantum dot pattern may include forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, and using the stamp to attach the quantum dot layer to a negative substrate. Contacting, and separating the stamp from the engraved substrate.
  • the surface energy of the engraved substrate may be greater than the surface energy of the stamp.
  • a wearable quantum dot display device includes a first display layer including a first quantum dot pattern, and a second display layer disposed on the first display layer and including a second quantum dot pattern. .
  • the wearable quantum dot display apparatus may further include a third display layer disposed on the second display layer and including a third quantum dot pattern.
  • the first quantum dot pattern, the second quantum dot pattern, and the third quantum dot pattern may be disposed to correspond to each other.
  • the first quantum dot pattern may be a red quantum dot pattern
  • the second quantum dot pattern may be a green quantum dot pattern
  • the third quantum dot pattern may be a blue quantum dot pattern.
  • the wearable electronic device includes a wearable quantum dot display device and a control device connected to the wearable quantum dot display device by wire or wirelessly.
  • the control device may be a smart watch.
  • the wearable quantum dot display device may display a screen having a size that cannot be displayed by the smart watch or enlarge the screen displayed on the smart watch.
  • the wearable quantum dot display device may be adhered to a human skin and display a biosignal.
  • the wearable electronic device may further include a sensing device connected to at least one of the wearable quantum dot display device and the smart watch by wire or wirelessly, and attached to a human skin to measure a biosignal.
  • the smart watch may store or transmit a biosignal measured by the wearable quantum dot display device or the sensing device to an external device.
  • the wearable electronic device includes a sensing device that is wired or wirelessly connected to the wearable quantum dot display device and the wearable quantum dot display device and is attached to a human skin to measure a biosignal.
  • an ultra-thin wearable quantum dot display device having excellent performance may be implemented. Since the quantum dot patterns of different colors may be vertically disposed, the wearable quantum dot display device may be highly integrated.
  • the wearable quantum dot display device may be attached to a skin of a person such as a back of a hand, a cuff, an arm, and provide various display screens and a convenient interface.
  • the wearable quantum dot display apparatus may display the measured biosignal on a screen.
  • the wearable quantum dot display device may be linked to a smart watch to expand the usability of the smart watch and increase convenience.
  • the measured bio signals may be stored in the smart watch and utilized, and transmitted to an external device through the smart watch. A precise biosignal can be measured and the reliability of the measured biosignal can be improved.
  • FIG. 1 is a cross-sectional view of a wearable quantum dot display apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention.
  • FIG. 7 through 9 are cross-sectional views of the display layers of FIG. 6.
  • FIG. 10 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention.
  • 11 to 13 are cross-sectional views illustrating a method of forming the wearable quantum dot display device of FIG. 1.
  • 14 to 18 are diagrams for describing a method of forming a first quantum dot pattern according to an embodiment of the present invention.
  • FIG. 19 is a cross-sectional view for describing a method of forming the wearable quantum dot display device of FIG. 3.
  • FIG. 20 is a cross-sectional view for describing a method of forming the wearable quantum dot display device of FIG. 4.
  • 21 and 22 are diagrams for describing a method of forming the wearable quantum dot display device of FIG. 6.
  • 23 to 26 are diagrams for describing a method of attaching the wearable quantum dot display apparatus of FIG. 22 to a human body.
  • FIG. 27 is a block diagram schematically illustrating a wearable electronic device according to an embodiment of the present disclosure.
  • FIG. 28 is a block diagram schematically illustrating a wearable electronic device according to another embodiment of the present invention.
  • 29 is a block diagram schematically illustrating a wearable electronic device according to another embodiment of the present invention.
  • FIG. 30 illustrates an application example of the wearable electronic device of FIG. 27.
  • FIG. 31 illustrates an application example of the wearable electronic device of FIG. 28.
  • FIG. 32 illustrates an application example of the wearable electronic device of FIG. 29.
  • first and second are used herein to describe various elements, the elements should not be limited by such terms. These terms are only used to distinguish the elements from one another. Again, where an element is said to be above another element it means that it can be formed directly on another element or a third element can be interposed therebetween.
  • FIG. 1 is a cross-sectional view of a wearable quantum dot display apparatus according to an embodiment of the present invention.
  • the wearable quantum dot display apparatus 10 may include a first display layer 100, and the first display layer 100 may include a quantum dot pattern layer 110 and a first charge transfer layer 121.
  • the second charge transfer layer 122, the first electrode layer 131, the second electrode layer 132, the first insulating layer 141, and the second insulating layer 142 may be included.
  • the wearable quantum dot display apparatus 100 includes a first insulating layer 141, a first electrode layer 131, a first charge transfer layer 121, a quantum dot pattern layer 110, a second charge transfer layer 122, and a second
  • the electrode layer 132 and the second insulating layer 142 may be stacked in this order.
  • the quantum dot pattern layer 110 may include quantum dots.
  • the quantum dots may include, for example, CdSe / ZnS quantum dots, CdSe / CdS / ZnS quantum dots, Cu-In-Se quantum dots, PbS quantum dots, InP quantum dots, and the like, but are not limited thereto.
  • the quantum dot pattern layer 110 may be formed of a colloidal nanocrystalline material including quantum dots.
  • the quantum dot may have a shell for stability and may exhibit a light emission quantum yield of 80% or more.
  • the quantum dot pattern layer 110 may include a quantum dot pattern, for example, a first quantum dot pattern 111, a second quantum dot pattern 112, and a third quantum dot pattern 113.
  • the first quantum dot pattern 111 may be, for example, a red quantum dot pattern including a red quantum dot, and may be formed of a colloidal nanocrystalline material including CdSe / CdS / ZnS quantum dots.
  • the second quantum dot pattern 112 may be, for example, a green quantum dot pattern including a green quantum dot, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the third quantum dot pattern 113 may be, for example, a blue quantum dot pattern including a blue quantum dot, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the first charge transfer layer 121 may include a hole injection layer and a hole transfer layer.
  • the hole injection layer is excellent in interfacial properties and easily receives holes from the first electrode layer 131 or can easily give electrons to the first electrode layer 131, for example, PEDOT: PSS (poly (3,4) -ethylenedioxythiophene): poly (styrenesulfonate)) may be formed of a polymer material.
  • the hole transport layer is a material capable of easily transferring holes to the quantum dot pattern 110, for example, TFB (poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (4,4- (N -(4-sec-butylphenyl)) diphenylamine)]).
  • TFB poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (4,4- (N -(4-sec-butylphenyl)) diphenylamine
  • the second charge transfer layer 122 may include one or more of an electron transfer layer and an electron injection layer.
  • the electron transport layer may be formed of a material capable of easily transferring electrons to the quantum dot pattern 110, for example, a metal oxide such as ZnO or a metal oxide nanocrystal.
  • the electron injection layer may be formed of a material that can easily receive electrons from the second electrode layer 132, for example, a transparent oxide layer such as zinc tin oxide (ZnO: SnO 2 , ZTO).
  • the first electrode layer 131 functions as an anode, and has a high work function to facilitate injection of holes into the first charge transfer layer 121, for example, a transparent oxide layer such as indium tin oxide (ITO),
  • ITO indium tin oxide
  • the metal pattern eg, a gold pattern in the form of a mesh
  • a graphene layer laminated structure or a transparent oxide layer and a graphene layer laminated structure may be formed.
  • the first electrode layer 131 may be patterned to correspond to the quantum dot patterns 111, 112, and 113. As a result, the wearable quantum dot display apparatus 10 may display an image by driving each pixel.
  • the second electrode layer 132 functions as a cathode, and has a low work function to facilitate injection of electrons into the second charge transfer layer 122, for example, a metal such as lithium (Li) or aluminum (Al). , Alloys thereof, or metals doped with them.
  • the second electrode layer 132 may be patterned to correspond to the quantum dot patterns 111, 112, and 113. As a result, the wearable quantum dot display apparatus 10 may display an image by driving each pixel.
  • the first insulating layer 141 and the second insulating layer 142 may include at least one of a protective layer and an adhesive layer.
  • the protective layer may be formed of, for example, parylene, poly (p-xylylene), polyimide, or the like, and may be formed of the quantum dot display device 100. It is disposed on the upper and lower surfaces to protect and support the components, such as to prevent the components inside thereof from oxidizing.
  • the adhesive layer may be formed of, for example, an epoxy resin, and serves to prevent the protective layer from peeling off.
  • the wearable quantum dot display apparatus 10 may be adhered to the human skin through the second insulating layer 142 or to the human skin through a separate adhesive means.
  • the wearable quantum dot display apparatus 10 may include a first wire electrically connected to the first electrode layer 131 and a second wire electrically connected to the second electrode layer 132.
  • the first electrode layer 131 may be electrically connected to an external power source or an external device by the first wiring
  • the second electrode layer 132 may be electrically connected to an external power source or an external device by the second wiring.
  • the first wiring and the second wiring may be deposited in a patterned state between the quantum dot patterns 111, 112, and 113.
  • the first wiring and the second wiring may be formed of a metal such as chromium (Cr) or gold (Au).
  • the first wiring and the second wiring may be formed to have a thickness of chromium 7 nm and gold 100 nm.
  • the wearable quantum dot display apparatus 10 may be formed in an ultra thin film form.
  • the wearable quantum dot display apparatus 10 may be formed to have a thickness of 3 ⁇ m or less, and the quantum dot pattern layer 110 and the first charge transfer layer 121 except for the first and second insulating layers 141 and 142 may be formed.
  • the total thickness of the second charge transfer layer 122, the first electrode layer 131, and the second electrode layer 132 may be 300 nm or less.
  • FIG. 2 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display device 10 may further include an anti-reflection layer 150 disposed between the second electrode layer 132 and the second insulating layer 142.
  • the anti-reflection layer may be formed of a material having a high refractive index, for example, WO 3 , ZnS, ZTO or the like, and may have a thickness of 40nm.
  • the anti-reflection layer 150 may transmit light emitted from the quantum dot patterns 111, 112, and 113, and block light outside the quantum dot display device 10. As a result, interference or scattering due to external light may be prevented, and a display screen having excellent performance may be realized.
  • FIG. 3 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display apparatus 10 may include a signal sensor layer 400 disposed under the first insulating layer 141.
  • the wearable quantum dot display apparatus 10 may be adhered to human skin by an adhesive means disposed under the signal sensor layer 400.
  • the signal sensor layer 400 may be a sensor capable of detecting a bio signal, for example, an activity measuring sensor, a strain sensor, a heart rate sensor, a PPG sensor, a blood pressure measuring sensor, a temperature sensor, a blood sugar sensor, a pH sensor, insulin Sensors and the like.
  • the biosignals detected by the signal sensor layer 400 may be displayed on the screen of the wearable quantum dot display apparatus 10.
  • FIG. 4 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display apparatus 10 may include a touch sensor layer 500 disposed on the second insulating layer 142.
  • the touch sensor layer 500 is a touch sensor of various structures, for example, a touch capacitive touch sensor, a pressure resistive film touch screen, a surface ultrasonic touch screen, an infrared light touch, an integrated tension measuring touch, a piezo effect touch touch sensor, or the like. It may include.
  • the touch sensor layer 500 may provide a free and convenient interface to the wearable quantum dot display device 10 and may provide a wider display screen by eliminating complicated buttons applied to the display device. As a result, the wearable quantum dot display apparatus 10 may be attached to a back of a hand, a cuff, an arm, or the like of a human, to provide a variety of display screens and a convenient interface. Although the touch sensor layer 500 is illustrated as being disposed on the display layer 100 in FIG. 4, the touch sensor layer 500 is not limited thereto and may be disposed inside or below the display layer 100.
  • FIG. 5 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display apparatus 10 may include a signal disposed under the first insulating layer 141 and an antireflection layer 150 disposed between the second electrode layer 132 and the second insulating layer 142.
  • the touch sensor layer 500 may be disposed on the sensor layer 400 and the second insulating layer 142.
  • the wearable quantum dot display apparatus 10 includes the antireflection layer 150, the signal sensor layer 400, and the touch sensor layer 500, so that the antireflection layer 150 and the signal sensor layer of FIGS. 2 to 4 are included. 400, and the functions, functions, and effects of the touch sensor layer 500.
  • FIG. 6 is a cross-sectional view of a wearable quantum dot display device according to still another embodiment of the present invention
  • FIGS. 7 to 9 are cross-sectional views of the display layers of FIG. 6. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display apparatus 10 may include a first display layer 100, a second display layer 200, and a third display layer 300.
  • the wearable quantum dot display apparatus 10 may include a structure in which the first display layer 100, the second display layer 200, and the third display layer 300 are sequentially stacked.
  • the number and stacking order of the display layers stacked in the wearable quantum dot display device 10 may be appropriately selected in consideration of the color of the quantum dot pattern included in the display layer and the image to be implemented.
  • the first display layer 100 may include a quantum dot pattern layer 110, a first charge transfer layer 121, a second charge transfer layer 122, a first electrode layer 131, and a second electrode layer ( 132, a first insulating layer 141, a second insulating layer 142, and an anti-reflection layer 150.
  • the first display layer 100 includes a first insulating layer 141, a first electrode layer 131, a first charge transfer layer 121, a quantum dot pattern layer 110, a second charge transfer layer 122, and a second
  • the electrode layer 132, the anti-reflection layer 150, and the second insulating layer 142 may be stacked.
  • the quantum dot pattern layer 110 of the first display layer 100 may include the first quantum dot pattern 111.
  • the first quantum dot pattern 111 may be, for example, a red quantum dot pattern including red quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / CdS / ZnS quantum dots.
  • the second display layer 200 may have the same structure as the first display layer 100 described with reference to FIG. 7.
  • the quantum dot pattern layer 210 of the second display layer 200 may include a second quantum dot pattern 211.
  • the second quantum dot pattern 211 may be, for example, a green quantum dot pattern including green quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the third display layer 300 may have the same structure as the first display layer 100 described with reference to FIG. 7.
  • the quantum dot pattern layer 310 of the third display layer 300 may include a third quantum dot pattern 311.
  • the third quantum dot pattern 311 may be, for example, a blue quantum dot pattern including a blue quantum dot, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the quantum dot patterns 111, 211 and 311 of the first display layer 100 to the third display layer 300 may be disposed at positions corresponding to each other.
  • the first quantum dot pattern 111 of the first display layer 100, the second quantum dot pattern 211 of the second display layer 200, and the third quantum dot pattern of the third display layer 300 ( 311 may be disposed at positions corresponding to each other in the vertical direction.
  • the wearable quantum dot display apparatus 10 may be highly integrated.
  • FIG. 10 is a cross-sectional view of a wearable quantum dot display apparatus according to another embodiment of the present invention. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display apparatus 10 includes a signal sensor layer 400 disposed under the first display layer 100 and a touch sensor layer 500 disposed over the third display layer 300. can do.
  • the wearable quantum dot display apparatus 10 includes both the signal sensor layer 400 and the touch sensor layer 500 so that the functions of the signal sensor layer 400 and the touch sensor layer 500 described with reference to FIGS. 3 and 4, Action, and effect.
  • 11 to 13 are cross-sectional views illustrating a method of forming the wearable quantum dot display device of FIG. 1.
  • a sacrificial layer 42 is formed on a support layer 41 formed of silicon, glass, or the like.
  • the sacrificial layer 42 may be formed of nickel using a thermal deposition process.
  • a first insulating layer 141 including at least one of a protective layer and an adhesive layer is formed on the sacrificial layer 42.
  • the protective layer may be formed of parylene, poly (p-xylene), polyimide, or the like on the sacrificial layer 42 using a spin coating process.
  • the adhesive layer may be formed of an epoxy resin or the like on the protective layer by using a spin coating process.
  • the protective layer may be formed to a thickness of about 500nm ⁇ 1 ⁇ m, the adhesive layer may be formed to a thickness of about 500nm ⁇ 2 ⁇ m.
  • the first insulating layer 141 is formed and then annealed at about 95 ° C. for about 1 minute and at about 150 ° C. for about 30 minutes or after exposure to cured at about 150 ° C. for about 30 minutes. Can be.
  • the adhesive layer may be formed to have an ultra-flat surface through a reflow process.
  • the first electrode layer 131 is formed on the first insulating layer 141.
  • the first electrode layer 131 may be formed by patterning a transparent oxide layer such as an indium tin oxide layer deposited on the first insulating layer 141 by using a sputtering process.
  • the first electrode layer 131 may be surface treated with ultraviolet / ozone.
  • the first electrode layer 131 may be formed of a stacked structure of a metal pattern (eg, a gold pattern in a mesh form) and a graphene layer, or a stacked structure of a transparent oxide layer and a graphene layer.
  • the first electrode layer 131 may be patterned to correspond to the quantum dot patterns 111, 112, and 113 of FIG. 12.
  • the first charge transfer layer 121 including the hole injection layer and the hole transfer layer is formed on the first electrode layer 131.
  • the hole injection layer may be formed on the first electrode layer 131 by PEDOT: PSS or the like by using a spin coating process (2000 rpm, 30 seconds). After the hole injection layer is formed, it may be annealed at atmospheric pressure at 120 ° C. for 10 minutes and annealed at 150 ° C. for 10 minutes in a glove box to remove residual solvent.
  • the hole transport layer may be formed of 0.5 wt% TFB in m-xylene or the like on the hole injection layer using a spin coating process, and may be annealed at a temperature of 150 ° C. in a glove box.
  • the first quantum dot pattern 111 is formed on the first charge transfer layer 121.
  • the first quantum dot pattern 121 may be, for example, a red quantum dot pattern including red quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / CdS / ZnS quantum dots.
  • a method of forming the first quantum dot pattern 111 according to an embodiment of the present invention will be described with reference to FIGS. 14 to 18.
  • a quantum dot layer 52 is formed on the donor substrate 51.
  • the quantum dot layer 52 may be formed of a colloidal nanocrystalline material including red quantum dots, for example, CdSe / CdS / ZnS quantum dots.
  • the donor substrate 51 may be surface treated with octadecyltrichlorosilane (ODTS) or the like before forming the quantum dot layer 52.
  • ODTS octadecyltrichlorosilane
  • the quantum dot layer 52 is separated from the donor substrate 51 by the stamp 53 and picked up.
  • the stamp 53 is contacted with the quantum dot layer 52 and separated at a speed of about 10 cm / s, the quantum dot layer 52 in contact with the lower surface of the stamp 53 may be separated from the donor substrate 51 and picked up.
  • the stamp 53 may be formed of, for example, polydimethylsiloxane (PDMS).
  • the stamp 53 picking up the quantum dot layer 52 is disposed to be aligned on the intaglio substrate 54.
  • the intaglio substrate 54 may be formed of a material having a surface energy greater than that of the stamp 53, for example, silicon, a polymer, glass, an organic material, an oxide, or the like.
  • the recessed substrate 54 has a recessed region 54a which enters from the surface to the inside.
  • the quantum dot layer 52 is in contact with the negative substrate 54. Some pressure may be applied to the stamp 53 as a whole so that the quantum dot layer 52 is in uniform contact with the negative substrate 54. At this time, the quantum dot layer 52 is in contact with the intaglio substrate 54 at portions other than the recess region 54a, and the portion corresponding to the recess region 54a is not in contact with the intaglio substrate 54.
  • the stamp 53 is separated from the intaglio substrate 54. Since the surface energy of the intaglio substrate 54 is greater than the surface energy of the stamp 53, the portion 52a of the quantum dot layer in contact with the intaglio substrate 54 is separated from the stamp 53 and placed on the surface of the intaglio substrate 54. The remaining portion and the portion corresponding to the recessed region 54a are picked up while still being adhered to the stamp 53 to form the first quantum dot pattern 111.
  • the stamp 53 is aligned with the support layer 41, and the first quantum dot pattern 111 is transferred to the first charge transfer layer 121.
  • the first quantum dot pattern 111 is separated from the stamp 53 to the first charge transfer layer 121 by contacting and separating the stamp 53 on which the first quantum dot pattern 111 is formed after contacting the first charge transfer layer 121. Can be transferred.
  • a second quantum dot pattern 112 and a third quantum dot pattern 113 are formed on the first charge transfer layer 121.
  • the second quantum dot pattern 112 and the third quantum dot pattern 113 may be formed by the same negative transfer printing method as the method of forming the first quantum dot pattern 111 described above.
  • the second quantum dot pattern 112 may be, for example, a green quantum dot pattern including green quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the third quantum dot pattern 113 may be, for example, a blue quantum dot pattern including blue quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the quantum dot pattern layer 110 may be annealed at 150 ° C. in the glove box after it is formed. That is, the quantum dot pattern layer 110 including the first quantum dot pattern 111, the second quantum dot pattern 112, and the third quantum dot pattern 113 may be formed by a negative transfer printing method. By the engraved transfer printing method, quantum dot patterns 111, 112, and 113 having a size of 20 ⁇ m ⁇ 20 ⁇ m or less may be formed in a uniform shape and size. As a result, an ultra-thin wearable display device having excellent performance may be implemented.
  • a second charge transfer layer 122 including at least one of an electron transfer layer and an electron injection layer is formed on the quantum dot pattern layer 110.
  • the electron transport layer may be formed of ZnO nanocrystals in butanol on the quantum dot pattern layer 110 by using a spin coating process, and may be annealed at 145 ° C.
  • the electron injection layer may be formed of ZTO on the cathode coating layer by using a sputtering process.
  • the second electrode layer 132 is formed on the second charge transfer layer 122.
  • the second electrode layer 132 may be formed using a thermal deposition process, and may be formed by patterning a LiAl alloy, or may be formed of silver doped with aluminum. Although not shown, the second electrode layer 132 may be patterned to correspond to the quantum dot patterns 111, 112, and 113.
  • a second insulating layer 142 including at least one of a protective layer and an adhesive layer is formed on the second electrode layer 132.
  • the adhesive layer may be formed of an epoxy resin on the second electrode layer 132 using a spin coating process.
  • the protective layer may be formed of parylene, poly (p-xylene), polyimide, or the like on the adhesive layer by using a spin coating process.
  • the protective layer may be formed of parylene on the adhesive layer using a parylene coater. Can be.
  • the protective layer may be formed to a thickness of about 500nm ⁇ 1 ⁇ m, the adhesive layer may be formed to a thickness of 500nm ⁇ 2 ⁇ m.
  • the second insulating layer 142 may be annealed at about 95 ° C. for about 1 minute and at about 150 ° C. for about 30 minutes after being formed, or may be cured at about 150 ° C. for about 30 minutes after exposure.
  • the adhesive layer may be formed to have an ultra-flat surface through a reflow process.
  • the sacrificial layer 42 is removed to separate the support layer 41 from the first insulating layer 141.
  • the sacrificial layer 42 may be removed by an etching process using a nickel etching solution. As a result, the wearable quantum dot display apparatus 10 of FIG. 1 may be formed.
  • FIG. 19 is a cross-sectional view for describing a method of forming the wearable quantum dot display device of FIG. 3. Descriptions overlapping with the above-described embodiment may be omitted.
  • the signal sensor layer 400 is formed before the first insulating layer 141 is formed on the sacrificial layer 42.
  • the signal sensor layer 400 may be a sensor capable of detecting a bio signal, for example, an activity measuring sensor, a strain sensor, a heart rate sensor, a PPG sensor, a blood pressure measuring sensor, a temperature sensor, a blood sugar sensor, a pH sensor, insulin Sensors and the like.
  • FIG. 20 is a cross-sectional view for describing a method of forming the wearable quantum dot display device of FIG. 4. Descriptions overlapping with the above-described embodiment may be omitted.
  • the touch sensor layer 500 is formed on the second insulating layer 142.
  • the touch sensor layer 500 is a touch sensor of various structures, for example, a touch capacitive touch sensor, a pressure resistive film touch screen, a surface ultrasonic touch screen, an infrared light touch, an integrated tension measuring touch, a piezo effect touch touch sensor, or the like. It may include.
  • 21 and 22 are diagrams for describing a method of forming the wearable quantum dot display device of FIG. 6. Descriptions overlapping with the above-described embodiment may be omitted.
  • a sacrificial layer 42 is formed on a support layer 41 formed of silicon, glass, or the like.
  • the sacrificial layer 42 may be formed by annealing a poly tetra fluoro ethylene (PTFE) solution at about 165 ° C. for about 15 minutes and at about 330 ° C. for about 15 minutes.
  • PTFE poly tetra fluoro ethylene
  • a first insulating layer 141 including at least one of a protective layer and an adhesive layer is formed on the sacrificial layer 42.
  • the protective layer is formed of parylene, poly (p-xylylene), polyimide, or the like on the sacrificial layer 42 using a spin coating process, and is formed on the sacrificial layer 42 using, for example, a parylene coater. It may be formed of parylene or the like.
  • the adhesive layer may be formed of an epoxy resin or the like on the protective layer by using a spin coating process.
  • the first insulating layer 141 may be annealed at about 95 ° C. for about 1 minute and at about 150 ° C. for about 30 minutes after being formed, or may be cured at about 150 ° C. for about 30 minutes after exposure.
  • the adhesive layer may be formed to have an ultra-flat surface through a reflow process.
  • the first electrode layer 131 is formed on the first insulating layer 141.
  • the first electrode layer 131 may be formed by patterning a transparent oxide layer such as an indium tin oxide layer deposited on the first insulating layer 141 using a sputtering process.
  • the first electrode layer 131 may be surface treated with ultraviolet / ozone.
  • the first electrode layer 131 may be formed of a stacked structure of a metal pattern (eg, a gold pattern in a mesh form) and a graphene layer, or a stacked structure of a transparent oxide layer and a graphene layer.
  • the first charge transport layer 121 including the hole transport layer and the hole injection layer is formed on the first electrode layer 131.
  • the hole injection layer may be formed of PEDOT: PSS or the like on the first electrode layer 131 by using a spin coating process (2000 rpm), and may be annealed at 150 ° C. for 30 minutes.
  • the hole transport layer may be formed of 0.5 wt% TFB in m-xylene and the like on the hole injection layer using a spin coating process (2000 rpm) and annealed at 150 ° C. for 30 minutes.
  • the first quantum dot pattern 111 is formed on the first charge transfer layer 121.
  • the first quantum dot pattern 111 may be, for example, a red quantum dot pattern including red quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / CdS / ZnS quantum dots.
  • a first wiring electrically connected to the first electrode layer 131 is formed.
  • the first wiring may be deposited in a patterned state between the first quantum dot patterns 111 by using a shadow mask.
  • the first wiring may be formed of chromium and gold, and may be, for example, formed of about 7 nm of chromium and about 100 nm of gold.
  • cadmium oxide 1.2 mmol was added to a reaction solvent formed of 15.0 mL of oleic acid (OA) and 20.0 mL of octadecene (1-octadecene, 1-ODE) in a glove box.
  • OA oleic acid
  • ODE octadecene
  • the resulting mixture was degassed at 130 ° C. for 2 hours under vacuum, then heated to 300 ° C. under argon atmosphere.
  • 0.03 mmol of 1M trioctylphosphine selenium (TOPSe) solvent was injected into a Cd (OA) 2 solution. The reaction was maintained until the CdSe core was the desired size.
  • TOPSe trioctylphosphine selenium
  • octane thiol (1-octanethiol) was injected at 300 ° C. to form CdSe / CdS core shell quantum dots.
  • Zn (OA) 2 CdSe / CdS / ZnS quantum dots were formed by injection of 4.8 mmol and 4.8 mmol of 2M TBPS (t-butylbicyclophosphorothionate). Hold at 300 ° C. for 15 minutes for further growth of ZnS. Precipitation / dispersion treatment was repeated to remove residual solvent, and OA treatment was performed to prevent dispersibility of CdSe / CdS / ZnS.
  • the manufactured red quantum dots may be formed on the first charge transfer layer 121 using a spin coating process (2000 rpm) and annealed at 150 ° C. for 30 minutes.
  • a second charge transfer layer 122 including at least one of an electron transfer layer and an electron injection layer is formed on the quantum dot pattern layer 110.
  • the electron transport layer may be formed of ZnO nanocrystals on the quantum dot pattern layer 110 by using a spin coating process (2000 rpm), and may be annealed at 150 ° C. for 30 minutes.
  • the electron injection layer may be formed of ZTO on the cathode coating layer by using a sputtering process.
  • the second electrode layer 132 is formed on the second charge transfer layer 122.
  • the second electrode layer 132 may be formed using a thermal deposition process, and may be formed by patterning a LiAl alloy, or may be formed of silver doped with aluminum. Although not illustrated, the second electrode layer 132 may be patterned to correspond to the first quantum dot pattern 111.
  • An anti-reflection layer 150 is formed on the second electrode layer 132.
  • the anti-reflection layer 150 may be deposited in a patterned state using a thermal deposition process and a shadow mask.
  • the antireflection layer 150 may be formed of a material having a high refractive index, for example, WO 3 , ZnS, ZTO, or the like, and may have a thickness of about 40 nm.
  • a second wiring electrically connected to the second electrode layer 132 is formed.
  • the second wiring may be deposited in a patterned state between the first quantum dot patterns 111 using a shadow mask.
  • the second wiring may be formed of chromium and gold, and may be formed of about 7 nm of chromium and about 100 nm of gold.
  • the second insulating layer 142 including at least one of a protective layer and an adhesive layer is formed on the anti-reflection layer 150.
  • the protective layer may be formed of parylene, poly (p-xylylene), polyimide, or the like on the anti-reflection layer 150 using a spin coating process.
  • the adhesive layer may be formed of an epoxy resin or the like on the protective layer by using a spin coating process.
  • the first insulating layer 141 is formed and then annealed at about 95 ° C. for about 1 minute and at about 150 ° C. for about 30 minutes or after exposure to cured at about 150 ° C. for about 30 minutes. Can be.
  • the adhesive layer may be formed to have an ultra-flat surface through a reflow process.
  • the second insulating layer 142 may be patterned by performing an etching process, for example, a reactive ion ethcing (RIE) process, to electrically connect the second wiring to the external device.
  • RIE reactive ion ethcing
  • the second display layer 200 and the third display layer 300 may be manufactured using the same method as the method of manufacturing the first display layer 100 described above with reference to FIG. 21, and may have the same stacking. It may have a structure.
  • the second display layer 200 includes a second quantum dot pattern 211
  • the third display layer 300 includes a third quantum dot pattern 311.
  • the second quantum dot pattern 211 may be, for example, a green quantum dot pattern including green quantum dots, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • the third quantum dot pattern 311 may be, for example, a blue quantum dot pattern including a blue quantum dot, and may be formed of a colloidal nanocrystalline material including CdSe / ZnS quantum dots.
  • a glove box 0.2 mmol of cadmium oxide and 4.0 mmol of zinc acetate (Zn (OAc) 2 ) were added to a reaction solvent formed of 6.0 mL of oleic acid and 15.0 mL of 1-ODE, and Cd (OA) 2 and Zn (OA 2 ) was prepared. The resulting mixture was degassed at 130 ° C. for 2 hours under vacuum, then heated to 300 ° C. under argon atmosphere.
  • Zn (OAc) 2 zinc acetate
  • Cd (OA) 2 and Zn (OA) 2 were prepared by adding 0.2 mmol of cadmium oxide and 4.0 mmol of Zn (OAc) 2 to a reaction solvent formed of 8.0 mL of oleic acid and 15.0 mL of 1-ODE in a glove box. The resulting mixture was degassed at 130 ° C. for 2 hours under vacuum, then heated to 300 ° C. under argon atmosphere. At an elevated temperature, 1.8 mL of sulfur (S) and 0.2 mmol of selenium (Se) were added to 3.0 mL of 1-ODE to prepare Cd (OA) 2 and Zn (OA) 2. Put in solution.
  • 23 to 26 are diagrams for describing a method of attaching the wearable quantum dot display apparatus of FIG. 22 to a human body. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable quantum dot display device 10 including the first display layer 100 to the third display layer 300 is formed on the sacrificial layer 42, and is peeled off on the wearable quantum dot display device 10.
  • Layer 43 is formed.
  • the release layer 43 may be a thermal release tape.
  • the wearable quantum dot display apparatus 10 is picked up from the sacrificial layer 42 by the release layer 43. Since the adhesion between the protective layer and the sacrificial layer 42 of the second insulating layer 142 is low, the wearable quantum dot display device 10 formed on the sacrificial layer 42 may be separated.
  • a release layer 43 picked up the wearable quantum dot display device 10 and the wearable quantum dot display device 10 is disposed on the polymer layer 44.
  • the polymer layer 44 may be formed of PDMS, for example.
  • the release layer 43 is separated from the polymer layer 44.
  • the polymer layer 44 may be heated at 150 ° C. for 1 minute to separate the release layer 73 from the polymer layer 44, and then the wearable quantum dot display apparatus 10 may be attached to the human body.
  • the release layer 43 is very thin and may not be separated from the polymer layer 44.
  • FIG. 27 is a block diagram schematically illustrating a wearable electronic device according to an embodiment of the present disclosure
  • FIG. 30 illustrates an application example of the wearable electronic device of FIG. 27. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable electronic device 1 may include a wearable quantum dot display device 10 and a control device 20.
  • the wearable quantum dot display apparatus 10 may be a quantum dot display apparatus according to embodiments of the present invention.
  • the wearable quantum dot display apparatus 10 may be attached to the skin of a person such as the back of the hand, the wrist, the arm, provide a convenient interface with various display screens, and measure and display the biosignal on the screen.
  • the wearable quantum dot display device 10 including the touch sensor layer may provide a wider display screen by eliminating complicated buttons applied to the display device, and may provide a free and convenient interface.
  • the wearable quantum dot display apparatus 10 including the signal sensor layer may measure and display a biosignal on a screen. Since the signal sensor layer included in the wearable quantum dot display apparatus 10 is directly attached to the human skin, the signal sensor layer may measure a precise biosignal and improve the reliability of the measured biosignal.
  • the control device 20 may be connected to the wearable quantum dot display device 10 by wire or wirelessly to control the wearable quantum dot display device 10.
  • the control device 20 may include a smart watch (or smart watch).
  • the wearable quantum dot display device 10 may be linked to the smart watch to display a screen having a size that cannot be displayed by the smart watch or to enlarge and display a screen displayed on the smart watch 20.
  • the wearable quantum dot display device 10 may be linked to the smart watch to expand usability of the smart watch and to increase convenience.
  • the bio signals measured by the wearable quantum dot display device 10 may be stored and utilized in the smart watch, and transmitted to an external device through the smart watch.
  • FIG. 28 is a block diagram schematically illustrating a wearable electronic device according to another embodiment of the present disclosure
  • FIG. 31 illustrates an application example of the wearable electronic device of FIG. 28. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable electronic device 1 may include a wearable quantum dot display device 10, a control device 20, and a sensing device 30.
  • the wearable quantum dot display apparatus 10 may be a quantum dot display apparatus according to embodiments of the present invention.
  • the wearable quantum dot display apparatus 10 may be attached to a human skin such as a back of a hand, a cuff, an arm, and provide a convenient interface with various display screens.
  • the wearable quantum dot display apparatus 10 may be connected to the sensing device 30 by wire or wirelessly to display a biosignal measured by the sensing device 30 on the screen.
  • the wearable quantum dot display device 10 including the touch sensor layer may provide a wider display screen by eliminating complicated buttons applied to the display device, and may provide a free and convenient interface.
  • the control device 20 may be connected to the wearable quantum dot display device 10 and the sensing device 30 by wire or wirelessly to control the wearable quantum dot display device 10 and the sensing device 30.
  • the control device 20 may include a smart watch (or smart watch).
  • the wearable quantum dot display device 10 may be linked to the smart watch 20 to display a screen of a size that the smart watch 20 cannot display or to enlarge and display the screen displayed on the smart watch 20.
  • the wearable quantum dot display device 10 may be linked to the smart watch 20 to extend the usability of the smart watch 20 and to increase convenience.
  • the bio signals measured by the sensing device 30 may be stored and utilized in the smart watch 20 and may be transmitted to an external device through the smart watch 20.
  • the sensing device 30 may be attached to the skin of a person such as the back of the hand, the wrist, the arm, together with the wearable quantum dot display device 10 to measure the biosignal.
  • the sensing device 30 may include, for example, an activity measuring sensor, a strain sensor, a heart rate measuring sensor, a PPG sensor, a blood pressure measuring sensor, a temperature sensor, a blood glucose sensor, a pH sensor, an insulin sensor, and the like.
  • the bio-signals detected by the sensing device 30 may be displayed on the screen of the wearable quantum dot display device 10 and may be stored and used in the smart watch 20. Since the sensing device 30 is directly attached to the human skin, the sensing device 30 can measure a precise biosignal and can improve the reliability of the measured biosignal.
  • FIG. 29 is a block diagram schematically illustrating a wearable electronic device according to another embodiment of the present invention, and FIG. 32 illustrates an application example of the wearable electronic device of FIG. 29. Descriptions overlapping with the above-described embodiment may be omitted.
  • the wearable electronic device 1 may include a wearable quantum dot display device 10, a control device 20, and a sensing device 30.
  • the wearable quantum dot display apparatus 10 may be a quantum dot display apparatus according to embodiments of the present invention.
  • the wearable quantum dot display apparatus 10 may be attached to a human skin such as a back of a hand, a cuff, an arm, and provide a convenient interface with various display screens.
  • the wearable quantum dot display device 10 including the touch sensor layer may provide a wider display screen by eliminating complicated buttons applied to the display device, and may provide a free and convenient interface.
  • the wearable quantum dot display apparatus 10 may include a display communication unit 11.
  • the display communication unit 11 may be connected to the sensing communication unit 31 included in the sensing device 30 by wire or wirelessly to receive a bio signal measured by the sensing device 30, and may display a wearable quantum dot display.
  • the device 10 may display the biosignal on a screen.
  • the display communication unit 11 is wired or wirelessly connected to the control communication unit 21 included in the control device 20 to receive the biosignal transmitted from the sensing device 30 to the control device 20.
  • the wearable quantum dot display apparatus 10 may display the biosignal on a screen.
  • the control device 20 may include a control communication unit 21.
  • the control communication unit 21 may be wired or wirelessly connected to the display communication unit 11 included in the wearable quantum dot display device 10 and / or the sensing communication unit 31 included in the sensing device 30. In this way, the control device 20 may control the wearable quantum dot display device 10 and the sensing device 30.
  • the control device 20 may include a smart watch (or smart watch).
  • the wearable quantum dot display device 10 may be linked to the smart watch 20 to display a screen of a size that the smart watch 20 cannot display or to enlarge and display the screen displayed on the smart watch 20.
  • the wearable quantum dot display device 10 may be linked to the smart watch 20 to extend the usability of the smart watch 20 and to increase convenience.
  • the bio signals measured by the sensing device 30 may be stored and utilized in the smart watch 20 and may be transmitted to an external device through the smart watch 20.
  • the sensing device 30 may be bonded to various parts of the human body such as an arm, a chest, a belly, and an ankle to measure a biosignal.
  • the sensing device 30 may be attached to, for example, an activity measuring sensor that can be attached to the ankle, a strain sensor, a heart rate sensor that can be attached to the chest, a PPG sensor, a blood pressure measuring sensor, a temperature sensor, a stomach Blood glucose sensors, pH sensors, insulin sensors, and the like.
  • the sensing device 30 may include a sensing communication unit 31.
  • the sensing communication unit 31 may communicate with one or more of the display communication unit 11 included in the wearable quantum dot display device 10 and the control communication unit 21 included in the control device 20.
  • the sensing communication unit 31 may be connected to the display communication unit 11 by wire or wirelessly, and transmit the biosignal detected by the sensing device 30 to the wearable quantum dot display device 10.
  • the sensing communication unit 31 may be connected to the control communication unit 21 by wire or wirelessly, and transmit the biosignal detected by the sensing device 30 to the control device 20.
  • the biosignal detected by the sensing device 30 may be displayed on the screen of the wearable quantum dot display device 10 and may be stored and used in the smart watch 20. Since the sensing device 30 is directly attached to the human skin, the sensing device 30 can measure a precise biosignal and can improve the reliability of the measured biosignal.
  • the wearable electronic device 1 is described as including the control device 20 in an independent configuration, the wearable electronic device 1 may not include the control device 20, and the control device 20 may display the wearable display. It may be included in an integrated form in the device 10.
  • an ultra-thin wearable quantum dot display device having excellent performance may be implemented. Since the quantum dot patterns of different colors may be vertically disposed, the wearable quantum dot display device may be highly integrated.
  • the wearable quantum dot display device may be attached to a skin of a person such as a back of a hand, a cuff, an arm, and provide various display screens and a convenient interface.
  • the wearable quantum dot display apparatus may display the measured biosignal on a screen.
  • the wearable quantum dot display device may be linked to a smart watch to expand the usability of the smart watch and increase convenience.
  • the measured bio signals may be stored in the smart watch and utilized, and transmitted to an external device through the smart watch. A precise biosignal can be measured and the reliability of the measured biosignal can be improved.

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Abstract

L'invention concerne un dispositif d'affichage à points quantiques pouvant être porté et un dispositif électronique pouvant être porté le comprenant. Le dispositif d'affichage à points quantiques pouvant être porté comprend une couche d'affichage, et la couche d'affichage comprend une première couche isolante, une première couche d'électrode agencée au-dessus de la première couche isolante, une première couche de fourniture de charge agencée au-dessus de la première couche d'électrode, une couche à motif de points quantiques agencée au-dessus de la première couche de fourniture de charge, une seconde couche de fourniture de charge agencée au-dessus de la couche à motif de points quantiques, une seconde couche d'électrode agencée au-dessus de la seconde couche de fourniture de charge, et une seconde couche isolante agencée au-dessus de la seconde couche d'électrode. Le dispositif électronique pouvant être porté comprend le dispositif d'affichage à points quantiques pouvant être porté.
PCT/KR2016/005019 2015-05-14 2016-05-12 Dispositif d'affichage à points quantiques pouvant être porté et dispositif électronique pouvant être porté le comprenant WO2016182370A1 (fr)

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CN109213373A (zh) * 2018-08-21 2019-01-15 意力(广州)电子科技有限公司 一种应用于显示设备的传感器制备方法及其传感器

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CN109213373A (zh) * 2018-08-21 2019-01-15 意力(广州)电子科技有限公司 一种应用于显示设备的传感器制备方法及其传感器

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