WO2016152906A1 - Resin multilayer film, laminate containing same, tft substrate, organic el element, color filter, and methods for producing those - Google Patents
Resin multilayer film, laminate containing same, tft substrate, organic el element, color filter, and methods for producing those Download PDFInfo
- Publication number
- WO2016152906A1 WO2016152906A1 PCT/JP2016/059158 JP2016059158W WO2016152906A1 WO 2016152906 A1 WO2016152906 A1 WO 2016152906A1 JP 2016059158 W JP2016059158 W JP 2016059158W WO 2016152906 A1 WO2016152906 A1 WO 2016152906A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin
- film
- polyimide
- resin film
- laminated film
- Prior art date
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 423
- 239000011347 resin Substances 0.000 title claims abstract description 423
- 239000000758 substrate Substances 0.000 title claims description 229
- 238000000034 method Methods 0.000 title description 100
- 229920001721 polyimide Polymers 0.000 claims abstract description 309
- 239000009719 polyimide resin Substances 0.000 claims abstract description 153
- 238000002834 transmittance Methods 0.000 claims abstract description 56
- 239000004642 Polyimide Substances 0.000 claims description 154
- 239000002253 acid Substances 0.000 claims description 84
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 83
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 70
- 238000004519 manufacturing process Methods 0.000 claims description 64
- -1 tetracarboxylic dianhydride compound Chemical class 0.000 claims description 63
- 239000005001 laminate film Substances 0.000 claims description 53
- 125000006159 dianhydride group Chemical group 0.000 claims description 47
- 239000011159 matrix material Substances 0.000 claims description 46
- 150000004985 diamines Chemical class 0.000 claims description 39
- 230000003287 optical effect Effects 0.000 claims description 31
- 125000002723 alicyclic group Chemical group 0.000 claims description 27
- 238000002835 absorbance Methods 0.000 claims description 18
- 125000004427 diamine group Chemical group 0.000 claims description 17
- 125000001931 aliphatic group Chemical group 0.000 claims description 16
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 12
- 125000000962 organic group Chemical group 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims description 6
- 125000003277 amino group Chemical group 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 229920002577 polybenzoxazole Polymers 0.000 claims description 5
- 239000004962 Polyamide-imide Substances 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229920006122 polyamide resin Polymers 0.000 claims description 4
- 229920002312 polyamide-imide Polymers 0.000 claims description 4
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 4
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 125000004434 sulfur atom Chemical group 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 503
- 239000010410 layer Substances 0.000 description 176
- 238000005259 measurement Methods 0.000 description 94
- 239000002243 precursor Substances 0.000 description 93
- 239000000243 solution Substances 0.000 description 90
- 230000015572 biosynthetic process Effects 0.000 description 68
- 238000003786 synthesis reaction Methods 0.000 description 61
- 239000007789 gas Substances 0.000 description 60
- 230000004888 barrier function Effects 0.000 description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 56
- 239000011521 glass Substances 0.000 description 55
- 229910052757 nitrogen Inorganic materials 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 26
- 229920005575 poly(amic acid) Polymers 0.000 description 22
- 238000002360 preparation method Methods 0.000 description 21
- 230000005540 biological transmission Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 239000011342 resin composition Substances 0.000 description 19
- 238000004458 analytical method Methods 0.000 description 18
- 239000000126 substance Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000000049 pigment Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 17
- 230000007423 decrease Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 229920000178 Acrylic resin Polymers 0.000 description 15
- 239000004925 Acrylic resin Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 13
- 239000010954 inorganic particle Substances 0.000 description 13
- 238000000059 patterning Methods 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 13
- 239000002585 base Substances 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 230000008859 change Effects 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 238000001035 drying Methods 0.000 description 11
- 238000003475 lamination Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 10
- 239000003086 colorant Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000006798 ring closing metathesis reaction Methods 0.000 description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 125000000217 alkyl group Chemical group 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 239000002966 varnish Substances 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 8
- 239000002981 blocking agent Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000012937 correction Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 5
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 150000008065 acid anhydrides Chemical class 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 239000006229 carbon black Substances 0.000 description 5
- 150000001805 chlorine compounds Chemical class 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 150000003949 imides Chemical group 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 5
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 4
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 4
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 4
- 241000252073 Anguilliformes Species 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- 150000001735 carboxylic acids Chemical class 0.000 description 4
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- HLZKNKRTKFSKGZ-UHFFFAOYSA-N tetradecan-1-ol Chemical compound CCCCCCCCCCCCCCO HLZKNKRTKFSKGZ-UHFFFAOYSA-N 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 230000004580 weight loss Effects 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 3
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical group ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000004018 acid anhydride group Chemical group 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 239000012965 benzophenone Substances 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical class CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 3
- 238000001336 glow discharge atomic emission spectroscopy Methods 0.000 description 3
- GOQYKNQRPGWPLP-UHFFFAOYSA-N heptadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 3
- 238000006358 imidation reaction Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- NMRPBPVERJPACX-UHFFFAOYSA-N octan-3-ol Chemical compound CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 125000002971 oxazolyl group Chemical group 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 2
- FYBFGAFWCBMEDG-UHFFFAOYSA-N 1-[3,5-di(prop-2-enoyl)-1,3,5-triazinan-1-yl]prop-2-en-1-one Chemical compound C=CC(=O)N1CN(C(=O)C=C)CN(C(=O)C=C)C1 FYBFGAFWCBMEDG-UHFFFAOYSA-N 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical group CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- MHOFGBJTSNWTDT-UHFFFAOYSA-M 2-[n-ethyl-4-[(6-methoxy-3-methyl-1,3-benzothiazol-3-ium-2-yl)diazenyl]anilino]ethanol;methyl sulfate Chemical compound COS([O-])(=O)=O.C1=CC(N(CCO)CC)=CC=C1N=NC1=[N+](C)C2=CC=C(OC)C=C2S1 MHOFGBJTSNWTDT-UHFFFAOYSA-M 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- NGDNVOAEIVQRFH-UHFFFAOYSA-N 2-nonanol Chemical compound CCCCCCCC(C)O NGDNVOAEIVQRFH-UHFFFAOYSA-N 0.000 description 2
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 2
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 2
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 2
- IJFXRHURBJZNAO-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 2
- MNUOZFHYBCRUOD-UHFFFAOYSA-N 3-hydroxyphthalic acid Chemical compound OC(=O)C1=CC=CC(O)=C1C(O)=O MNUOZFHYBCRUOD-UHFFFAOYSA-N 0.000 description 2
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical compound CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 description 2
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- BKQICAFAUMRYLZ-UHFFFAOYSA-N 4-methylheptan-3-ol Chemical compound CCCC(C)C(O)CC BKQICAFAUMRYLZ-UHFFFAOYSA-N 0.000 description 2
- FCOUHTHQYOMLJT-UHFFFAOYSA-N 6-methylheptan-2-ol Chemical compound CC(C)CCCC(C)O FCOUHTHQYOMLJT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- WVOLTBSCXRRQFR-SJORKVTESA-N Cannabidiolic acid Natural products OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@@H]1[C@@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-SJORKVTESA-N 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- ARNIZPSLPHFDED-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-(4-methoxyphenyl)methanone Chemical compound C1=CC(OC)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 ARNIZPSLPHFDED-UHFFFAOYSA-N 0.000 description 2
- IPTNXMGXEGQYSY-UHFFFAOYSA-N acetic acid;1-methoxybutan-1-ol Chemical compound CC(O)=O.CCCC(O)OC IPTNXMGXEGQYSY-UHFFFAOYSA-N 0.000 description 2
- DGOBMKYRQHEFGQ-UHFFFAOYSA-L acid green 5 Chemical compound [Na+].[Na+].C=1C=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=2C=CC(=CC=2)S([O-])(=O)=O)C=CC=1N(CC)CC1=CC=CC(S([O-])(=O)=O)=C1 DGOBMKYRQHEFGQ-UHFFFAOYSA-L 0.000 description 2
- 238000007605 air drying Methods 0.000 description 2
- 125000004849 alkoxymethyl group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- WVOLTBSCXRRQFR-DLBZAZTESA-N cannabidiolic acid Chemical compound OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@H]1[C@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-DLBZAZTESA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 2
- FVDRFBGMOWJEOR-UHFFFAOYSA-N hexadecan-2-ol Chemical compound CCCCCCCCCCCCCCC(C)O FVDRFBGMOWJEOR-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 2
- ZOCHHNOQQHDWHG-UHFFFAOYSA-N hexan-3-ol Chemical compound CCCC(O)CC ZOCHHNOQQHDWHG-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- BTFJIXJJCSYFAL-UHFFFAOYSA-N icosan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCCCO BTFJIXJJCSYFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- XGFDHKJUZCCPKQ-UHFFFAOYSA-N nonadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCCO XGFDHKJUZCCPKQ-UHFFFAOYSA-N 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- OXGBCSQEKCRCHN-UHFFFAOYSA-N octadecan-2-ol Chemical compound CCCCCCCCCCCCCCCCC(C)O OXGBCSQEKCRCHN-UHFFFAOYSA-N 0.000 description 2
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- REIUXOLGHVXAEO-UHFFFAOYSA-N pentadecan-1-ol Chemical compound CCCCCCCCCCCCCCCO REIUXOLGHVXAEO-UHFFFAOYSA-N 0.000 description 2
- ALVGHPMGQNBJRC-UHFFFAOYSA-N pentadecan-2-ol Chemical compound CCCCCCCCCCCCCC(C)O ALVGHPMGQNBJRC-UHFFFAOYSA-N 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 description 2
- DGTNSSLYPYDJGL-UHFFFAOYSA-N phenyl isocyanate Chemical compound O=C=NC1=CC=CC=C1 DGTNSSLYPYDJGL-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000003880 polar aprotic solvent Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical compound CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 description 2
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- HKOLRKVMHVYNGG-UHFFFAOYSA-N tridecan-2-ol Natural products CCCCCCCCCCCC(C)O HKOLRKVMHVYNGG-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 2
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- OLQWMCSSZKNOLQ-ZXZARUISSA-N (3s)-3-[(3r)-2,5-dioxooxolan-3-yl]oxolane-2,5-dione Chemical compound O=C1OC(=O)C[C@H]1[C@@H]1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-ZXZARUISSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- JDGFELYPUWNNGR-UHFFFAOYSA-N 1,2,3,3a,4,5,6,6a-octahydropentalene-1,3,4,6-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C2C(C(=O)O)CC(C(O)=O)C21 JDGFELYPUWNNGR-UHFFFAOYSA-N 0.000 description 1
- GVJFFQYXVOJXFI-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a,9,9a,10,10a-tetradecahydroanthracene Chemical compound C1C2CCCCC2CC2C1CCCC2 GVJFFQYXVOJXFI-UHFFFAOYSA-N 0.000 description 1
- RDOWUHKQVFEIIN-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a-decahydronaphthalene-1,3,5,7-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(=O)O)CC2C1CC(C(O)=O)CC2C(O)=O RDOWUHKQVFEIIN-UHFFFAOYSA-N 0.000 description 1
- DQIMGVGOYZOPBZ-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a-decahydronaphthalene-1,3,6,8-tetracarboxylic acid Chemical compound C1C(C(O)=O)CC(C(O)=O)C2C(C(O)=O)CC(C(=O)O)CC21 DQIMGVGOYZOPBZ-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- SKYXLDSRLNRAPS-UHFFFAOYSA-N 1,2,4-trifluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C=C1F SKYXLDSRLNRAPS-UHFFFAOYSA-N 0.000 description 1
- MQQRFOXFIPBFOV-UHFFFAOYSA-N 1,2-dimethylcyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1(C)C(C(O)=O)C(C(O)=O)C1(C)C(O)=O MQQRFOXFIPBFOV-UHFFFAOYSA-N 0.000 description 1
- SBHHKGFHJWTZJN-UHFFFAOYSA-N 1,3-dimethylcyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1(C)C(C(O)=O)C(C)(C(O)=O)C1C(O)=O SBHHKGFHJWTZJN-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 239000005968 1-Decanol Substances 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- VFFRLRQQWXGEBX-UHFFFAOYSA-N 1-aminonaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(N)=C(C(O)=O)C=CC2=C1 VFFRLRQQWXGEBX-UHFFFAOYSA-N 0.000 description 1
- VPSMSRGGNXFQIO-UHFFFAOYSA-N 1-aminonaphthalene-2-thiol Chemical compound C1=CC=C2C(N)=C(S)C=CC2=C1 VPSMSRGGNXFQIO-UHFFFAOYSA-N 0.000 description 1
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 1
- OZCMOJQQLBXBKI-UHFFFAOYSA-N 1-ethenoxy-2-methylpropane Chemical compound CC(C)COC=C OZCMOJQQLBXBKI-UHFFFAOYSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- OVIUVDDIQGWAKX-UHFFFAOYSA-N 1-ethynylnaphthalen-2-amine Chemical compound C1=CC=CC2=C(C#C)C(N)=CC=C21 OVIUVDDIQGWAKX-UHFFFAOYSA-N 0.000 description 1
- SJJCQDRGABAVBB-UHFFFAOYSA-N 1-hydroxy-2-naphthoic acid Chemical compound C1=CC=CC2=C(O)C(C(=O)O)=CC=C21 SJJCQDRGABAVBB-UHFFFAOYSA-N 0.000 description 1
- BDQNKCYCTYYMAA-UHFFFAOYSA-N 1-isocyanatonaphthalene Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1 BDQNKCYCTYYMAA-UHFFFAOYSA-N 0.000 description 1
- QWDQYHPOSSHSAW-UHFFFAOYSA-N 1-isocyanatooctadecane Chemical compound CCCCCCCCCCCCCCCCCCN=C=O QWDQYHPOSSHSAW-UHFFFAOYSA-N 0.000 description 1
- RUFPHBVGCFYCNW-UHFFFAOYSA-N 1-naphthylamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1 RUFPHBVGCFYCNW-UHFFFAOYSA-N 0.000 description 1
- OZAAEETZNZUQRX-UHFFFAOYSA-N 1-sulfanylnaphthalene-2-carboxylic acid Chemical compound C1=CC=CC2=C(S)C(C(=O)O)=CC=C21 OZAAEETZNZUQRX-UHFFFAOYSA-N 0.000 description 1
- CASXWXSTPJILAM-UHFFFAOYSA-N 2,3,3a,4,5,6,7,7a-octahydro-1h-indene-1,3,4,6-tetracarboxylic acid Chemical compound C1C(C(O)=O)CC(C(O)=O)C2C1C(C(=O)O)CC2C(O)=O CASXWXSTPJILAM-UHFFFAOYSA-N 0.000 description 1
- BVLCBFFLJLEBAA-UHFFFAOYSA-N 2,4,4-trimethylhexan-1-ol Chemical compound CCC(C)(C)CC(C)CO BVLCBFFLJLEBAA-UHFFFAOYSA-N 0.000 description 1
- SNIXNPJWOZSSEI-UHFFFAOYSA-N 2,4-diethynylaniline Chemical compound NC1=CC=C(C#C)C=C1C#C SNIXNPJWOZSSEI-UHFFFAOYSA-N 0.000 description 1
- MHKYUIOGLZZSSH-UHFFFAOYSA-N 2,4-diethynylbenzoic acid Chemical compound OC(=O)C1=CC=C(C#C)C=C1C#C MHKYUIOGLZZSSH-UHFFFAOYSA-N 0.000 description 1
- HVRFWRROUIDGQO-UHFFFAOYSA-N 2,4-dimethylheptan-1-ol Chemical compound CCCC(C)CC(C)CO HVRFWRROUIDGQO-UHFFFAOYSA-N 0.000 description 1
- KLXIWNNKFUMLDY-UHFFFAOYSA-N 2,5-diethynylaniline Chemical compound NC1=CC(C#C)=CC=C1C#C KLXIWNNKFUMLDY-UHFFFAOYSA-N 0.000 description 1
- PWUPPVLAUOWBKC-UHFFFAOYSA-N 2,5-diethynylbenzoic acid Chemical compound OC(=O)C1=CC(C#C)=CC=C1C#C PWUPPVLAUOWBKC-UHFFFAOYSA-N 0.000 description 1
- KUMMBDBTERQYCG-UHFFFAOYSA-N 2,6-bis(hydroxymethyl)-4-methylphenol Chemical compound CC1=CC(CO)=C(O)C(CO)=C1 KUMMBDBTERQYCG-UHFFFAOYSA-N 0.000 description 1
- LQNOYDGUEFOHDD-UHFFFAOYSA-N 2,6-diethynylaniline Chemical compound NC1=C(C#C)C=CC=C1C#C LQNOYDGUEFOHDD-UHFFFAOYSA-N 0.000 description 1
- PVOJHHDGUQKBHZ-UHFFFAOYSA-N 2,6-diethynylbenzoic acid Chemical compound OC(=O)C1=C(C#C)C=CC=C1C#C PVOJHHDGUQKBHZ-UHFFFAOYSA-N 0.000 description 1
- GXVUZYLYWKWJIM-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanamine Chemical compound NCCOCCN GXVUZYLYWKWJIM-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- ACUZDYFTRHEKOS-SNVBAGLBSA-N 2-Decanol Natural products CCCCCCCC[C@@H](C)O ACUZDYFTRHEKOS-SNVBAGLBSA-N 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N 2-Ethyl-1-hexanol Natural products CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Natural products CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- HDPLHDGYGLENEI-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COCC1CO1 HDPLHDGYGLENEI-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- BXVXPASMKWYBFD-UHFFFAOYSA-N 2-[[2-hydroxy-3-(hydroxymethyl)-5-methylphenyl]methyl]-6-(hydroxymethyl)-4-methylphenol Chemical compound CC1=CC(CO)=C(O)C(CC=2C(=C(CO)C=C(C)C=2)O)=C1 BXVXPASMKWYBFD-UHFFFAOYSA-N 0.000 description 1
- UZSDRHVOBLQYCX-UHFFFAOYSA-N 2-amino-6-hydroxybenzoic acid Chemical compound NC1=CC=CC(O)=C1C(O)=O UZSDRHVOBLQYCX-UHFFFAOYSA-N 0.000 description 1
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 1
- QPKNFEVLZVJGBM-UHFFFAOYSA-N 2-aminonaphthalen-1-ol Chemical compound C1=CC=CC2=C(O)C(N)=CC=C21 QPKNFEVLZVJGBM-UHFFFAOYSA-N 0.000 description 1
- CXOWHCCVISNMIX-UHFFFAOYSA-N 2-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(N)=CC=C21 CXOWHCCVISNMIX-UHFFFAOYSA-N 0.000 description 1
- BSZMQMCPMFBCJT-UHFFFAOYSA-N 2-aminonaphthalene-1-thiol Chemical compound C1=CC=CC2=C(S)C(N)=CC=C21 BSZMQMCPMFBCJT-UHFFFAOYSA-N 0.000 description 1
- KPIVDNYJNOPGBE-UHFFFAOYSA-N 2-aminonicotinic acid Chemical compound NC1=NC=CC=C1C(O)=O KPIVDNYJNOPGBE-UHFFFAOYSA-N 0.000 description 1
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- PGYJSURPYAAOMM-UHFFFAOYSA-N 2-ethenoxy-2-methylpropane Chemical compound CC(C)(C)OC=C PGYJSURPYAAOMM-UHFFFAOYSA-N 0.000 description 1
- GNUGVECARVKIPH-UHFFFAOYSA-N 2-ethenoxypropane Chemical compound CC(C)OC=C GNUGVECARVKIPH-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- LSTVMHDBTOZXME-UHFFFAOYSA-N 2-ethynyl-1h-naphthalene-2-carboxylic acid Chemical compound C1=CC=C2C=CC(C(=O)O)(C#C)CC2=C1 LSTVMHDBTOZXME-UHFFFAOYSA-N 0.000 description 1
- ALQPJHSFIXARGX-UHFFFAOYSA-N 2-ethynylaniline Chemical compound NC1=CC=CC=C1C#C ALQPJHSFIXARGX-UHFFFAOYSA-N 0.000 description 1
- IOSGANIYBODQTB-UHFFFAOYSA-N 2-ethynylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C#C IOSGANIYBODQTB-UHFFFAOYSA-N 0.000 description 1
- BBADOHRNBDTOQR-UHFFFAOYSA-N 2-ethynylnaphthalen-1-amine Chemical compound C1=CC=C2C(N)=C(C#C)C=CC2=C1 BBADOHRNBDTOQR-UHFFFAOYSA-N 0.000 description 1
- YEGNTQBFSQBGJT-UHFFFAOYSA-N 2-heptylundecan-1-ol Chemical compound CCCCCCCCCC(CO)CCCCCCC YEGNTQBFSQBGJT-UHFFFAOYSA-N 0.000 description 1
- YOETUEMZNOLGDB-UHFFFAOYSA-N 2-methylpropyl carbonochloridate Chemical compound CC(C)COC(Cl)=O YOETUEMZNOLGDB-UHFFFAOYSA-N 0.000 description 1
- HHCHLHOEAKKCAB-UHFFFAOYSA-N 2-oxaspiro[3.5]nonane-1,3-dione Chemical compound O=C1OC(=O)C11CCCCC1 HHCHLHOEAKKCAB-UHFFFAOYSA-N 0.000 description 1
- LASHFHLFDRTERB-UHFFFAOYSA-N 2-propylpentan-1-ol Chemical compound CCCC(CO)CCC LASHFHLFDRTERB-UHFFFAOYSA-N 0.000 description 1
- ZMPRRFPMMJQXPP-UHFFFAOYSA-N 2-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1S(O)(=O)=O ZMPRRFPMMJQXPP-UHFFFAOYSA-N 0.000 description 1
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical compound C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 description 1
- HCBNHPOQPCHHMA-UHFFFAOYSA-N 3,4-diethynylaniline Chemical compound NC1=CC=C(C#C)C(C#C)=C1 HCBNHPOQPCHHMA-UHFFFAOYSA-N 0.000 description 1
- UZSIKPMYGUPSKG-UHFFFAOYSA-N 3,4-diethynylbenzoic acid Chemical compound OC(=O)C1=CC=C(C#C)C(C#C)=C1 UZSIKPMYGUPSKG-UHFFFAOYSA-N 0.000 description 1
- XRGBJBOYNHXWPA-UHFFFAOYSA-N 3,5-diethynylaniline Chemical compound NC1=CC(C#C)=CC(C#C)=C1 XRGBJBOYNHXWPA-UHFFFAOYSA-N 0.000 description 1
- KUZBIUTZPWIHSI-UHFFFAOYSA-N 3,5-diethynylbenzoic acid Chemical compound OC(=O)C1=CC(C#C)=CC(C#C)=C1 KUZBIUTZPWIHSI-UHFFFAOYSA-N 0.000 description 1
- JBDAZSHVHIDGPT-UHFFFAOYSA-N 3,5-diethynylnaphthalen-1-amine Chemical compound C1=CC=C2C(N)=CC(C#C)=CC2=C1C#C JBDAZSHVHIDGPT-UHFFFAOYSA-N 0.000 description 1
- YMVUNBCWNRFOSD-UHFFFAOYSA-N 3,5-diethynylnaphthalen-2-amine Chemical compound C1=CC(C#C)=C2C=C(C#C)C(N)=CC2=C1 YMVUNBCWNRFOSD-UHFFFAOYSA-N 0.000 description 1
- IKCFDNIEBQUKHF-UHFFFAOYSA-N 3,6-diethynylnaphthalen-1-amine Chemical compound C#CC1=CC=C2C(N)=CC(C#C)=CC2=C1 IKCFDNIEBQUKHF-UHFFFAOYSA-N 0.000 description 1
- SZBPSVXMPXULOK-UHFFFAOYSA-N 3,6-diethynylnaphthalen-2-amine Chemical compound C1=C(C#C)C=C2C=C(C#C)C(N)=CC2=C1 SZBPSVXMPXULOK-UHFFFAOYSA-N 0.000 description 1
- WNPKXUIDHJMMRW-UHFFFAOYSA-N 3,7-diethynylnaphthalen-1-amine Chemical compound C1=C(C#C)C=C2C(N)=CC(C#C)=CC2=C1 WNPKXUIDHJMMRW-UHFFFAOYSA-N 0.000 description 1
- JUXWFAWSNPEVJE-UHFFFAOYSA-N 3,7-diethynylnaphthalen-2-amine Chemical compound C#CC1=CC=C2C=C(C#C)C(N)=CC2=C1 JUXWFAWSNPEVJE-UHFFFAOYSA-N 0.000 description 1
- DLHQZZUEERVIGQ-UHFFFAOYSA-N 3,7-dimethyl-3-octanol Chemical compound CCC(C)(O)CCCC(C)C DLHQZZUEERVIGQ-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 description 1
- YHMDIRXBIAWCFD-UHFFFAOYSA-N 3-(2-propylphenoxy)phthalic acid Chemical compound CCCC1=CC=CC=C1OC1=CC=CC(C(O)=O)=C1C(O)=O YHMDIRXBIAWCFD-UHFFFAOYSA-N 0.000 description 1
- KRPRVQWGKLEFKN-UHFFFAOYSA-N 3-(3-aminopropoxy)propan-1-amine Chemical compound NCCCOCCCN KRPRVQWGKLEFKN-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- DSSAWHFZNWVJEC-UHFFFAOYSA-N 3-(ethenoxymethyl)heptane Chemical compound CCCCC(CC)COC=C DSSAWHFZNWVJEC-UHFFFAOYSA-N 0.000 description 1
- NMRPBPVERJPACX-QMMMGPOBSA-N 3-Octanol Natural products CCCCC[C@@H](O)CC NMRPBPVERJPACX-QMMMGPOBSA-N 0.000 description 1
- TYKLCAKICHXQNE-UHFFFAOYSA-N 3-[(2,3-dicarboxyphenyl)methyl]phthalic acid Chemical compound OC(=O)C1=CC=CC(CC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O TYKLCAKICHXQNE-UHFFFAOYSA-N 0.000 description 1
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- YLTIRYJAWQHSQS-UHFFFAOYSA-N 3-[3-[3-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(C=CC=2)S(=O)(=O)C=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 YLTIRYJAWQHSQS-UHFFFAOYSA-N 0.000 description 1
- QWCOUSPHMMBIOO-UHFFFAOYSA-N 3-[5-[2-[2-(3-aminophenyl)-1,3-benzoxazol-5-yl]-1,1,1,3,3,3-hexafluoropropan-2-yl]-1,3-benzoxazol-2-yl]aniline Chemical compound NC1=CC=CC(C=2OC3=CC=C(C=C3N=2)C(C=2C=C3N=C(OC3=CC=2)C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QWCOUSPHMMBIOO-UHFFFAOYSA-N 0.000 description 1
- RHGPATLLEAKESN-UHFFFAOYSA-N 3-[5-[[2-(3-aminophenyl)-1,3-benzoxazol-5-yl]sulfonyl]-1,3-benzoxazol-2-yl]aniline Chemical compound NC1=CC=CC(C=2OC3=CC=C(C=C3N=2)S(=O)(=O)C=2C=C3N=C(OC3=CC=2)C=2C=C(N)C=CC=2)=C1 RHGPATLLEAKESN-UHFFFAOYSA-N 0.000 description 1
- XFXOLBNQYFRSLQ-UHFFFAOYSA-N 3-amino-2-naphthoic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(N)=CC2=C1 XFXOLBNQYFRSLQ-UHFFFAOYSA-N 0.000 description 1
- GIMFLOOKFCUUOQ-UHFFFAOYSA-N 3-amino-4-hydroxy-1,2-dihydropyrimidin-6-one Chemical compound NN1CN=C(O)C=C1O GIMFLOOKFCUUOQ-UHFFFAOYSA-N 0.000 description 1
- WXZMGZRGVJLUNP-UHFFFAOYSA-N 3-amino-4-sulfanyl-1,2-dihydropyrimidine-6-thione Chemical compound NN1CNC(=S)C=C1S WXZMGZRGVJLUNP-UHFFFAOYSA-N 0.000 description 1
- WQKAIZJFJDLUTB-UHFFFAOYSA-N 3-amino-n-[5-[2-[3-[(3-aminobenzoyl)amino]-4-hydroxyphenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-hydroxyphenyl]benzamide Chemical compound NC1=CC=CC(C(=O)NC=2C(=CC=C(C=2)C(C=2C=C(NC(=O)C=3C=C(N)C=CC=3)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)O)=C1 WQKAIZJFJDLUTB-UHFFFAOYSA-N 0.000 description 1
- ZAJAQTYSTDTMCU-UHFFFAOYSA-N 3-aminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1 ZAJAQTYSTDTMCU-UHFFFAOYSA-N 0.000 description 1
- KFFUEVDMVNIOHA-UHFFFAOYSA-N 3-aminobenzenethiol Chemical compound NC1=CC=CC(S)=C1 KFFUEVDMVNIOHA-UHFFFAOYSA-N 0.000 description 1
- QMIJLOSXZVDDAT-UHFFFAOYSA-N 3-aminonaphthalen-1-ol Chemical compound C1=CC=CC2=CC(N)=CC(O)=C21 QMIJLOSXZVDDAT-UHFFFAOYSA-N 0.000 description 1
- YIPRQTYMJYGRER-UHFFFAOYSA-N 3-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=CC2=CC(N)=CC(C(O)=O)=C21 YIPRQTYMJYGRER-UHFFFAOYSA-N 0.000 description 1
- RRGZIHVGADOGME-UHFFFAOYSA-N 3-aminonaphthalene-1-thiol Chemical compound C1=CC=CC2=CC(N)=CC(S)=C21 RRGZIHVGADOGME-UHFFFAOYSA-N 0.000 description 1
- AUSYVGSRIHOEPI-UHFFFAOYSA-N 3-aminonaphthalene-2-thiol Chemical compound C1=CC=C2C=C(S)C(N)=CC2=C1 AUSYVGSRIHOEPI-UHFFFAOYSA-N 0.000 description 1
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- NNKQLUVBPJEUOR-UHFFFAOYSA-N 3-ethynylaniline Chemical compound NC1=CC=CC(C#C)=C1 NNKQLUVBPJEUOR-UHFFFAOYSA-N 0.000 description 1
- PHPIMLZTBYCDSX-UHFFFAOYSA-N 3-ethynylbenzoic acid Chemical compound OC(=O)C1=CC=CC(C#C)=C1 PHPIMLZTBYCDSX-UHFFFAOYSA-N 0.000 description 1
- JBRQTCRFMFDFMX-UHFFFAOYSA-N 3-ethynylnaphthalen-1-amine Chemical compound C1=CC=C2C(N)=CC(C#C)=CC2=C1 JBRQTCRFMFDFMX-UHFFFAOYSA-N 0.000 description 1
- JPNBYODBCTYDOR-UHFFFAOYSA-N 3-ethynylnaphthalen-2-amine Chemical compound C1=CC=C2C=C(C#C)C(N)=CC2=C1 JPNBYODBCTYDOR-UHFFFAOYSA-N 0.000 description 1
- OCSLCWLTRCYWNR-UHFFFAOYSA-N 3-ethynylnaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC(C#C)=CC2=C1 OCSLCWLTRCYWNR-UHFFFAOYSA-N 0.000 description 1
- QJTVJXLRRWKGFE-UHFFFAOYSA-N 3-ethynylnaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C=C(C#C)C(C(=O)O)=CC2=C1 QJTVJXLRRWKGFE-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- RSFDFESMVAIVKO-UHFFFAOYSA-N 3-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=CC(S)=C1 RSFDFESMVAIVKO-UHFFFAOYSA-N 0.000 description 1
- QMWGSOMVXSRXQX-UHFFFAOYSA-N 3-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC(S(O)(=O)=O)=C1 QMWGSOMVXSRXQX-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- GPIUUMROPXDNRH-UHFFFAOYSA-N 3647-74-3 Chemical compound C1C2C3C(=O)NC(=O)C3C1C=C2 GPIUUMROPXDNRH-UHFFFAOYSA-N 0.000 description 1
- LJMPOXUWPWEILS-UHFFFAOYSA-N 3a,4,4a,7a,8,8a-hexahydrofuro[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1C2C(=O)OC(=O)C2CC2C(=O)OC(=O)C21 LJMPOXUWPWEILS-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- ZSSJQYMNCUJSBR-UHFFFAOYSA-N 4,5-dimethoxy-1,3-bis(methoxymethyl)imidazolidin-2-one Chemical compound COCN1C(OC)C(OC)N(COC)C1=O ZSSJQYMNCUJSBR-UHFFFAOYSA-N 0.000 description 1
- HQERXARAVMSCGQ-UHFFFAOYSA-N 4,8-diethynylnaphthalen-2-amine Chemical compound C1=CC=C(C#C)C2=CC(N)=CC(C#C)=C21 HQERXARAVMSCGQ-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- JCZGZRWDWZWOKN-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)-3-phenylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1C1=CC=CC=C1 JCZGZRWDWZWOKN-UHFFFAOYSA-N 0.000 description 1
- OLFLGBPXUIKTNP-UHFFFAOYSA-N 4-(4-amino-2,3-dichlorophenyl)-2,3-dichloroaniline Chemical compound ClC1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1Cl OLFLGBPXUIKTNP-UHFFFAOYSA-N 0.000 description 1
- XKXPBJBODVHDAW-UHFFFAOYSA-N 4-(4-amino-2-chlorophenyl)-3-chloroaniline Chemical compound ClC1=CC(N)=CC=C1C1=CC=C(N)C=C1Cl XKXPBJBODVHDAW-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- SVSXIELGQMTAKM-UHFFFAOYSA-N 4-(4-aminophenyl)aniline 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(C1=C(C=CC(=C1)N)C1=C(C=C(N)C=C1)C(F)(F)F)(F)F.C1(=CC=C(N)C=C1)C1=CC=C(N)C=C1 SVSXIELGQMTAKM-UHFFFAOYSA-N 0.000 description 1
- JHCBFGGESJQAIQ-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylcyclohexyl)methyl]-2,6-dimethylcyclohexan-1-amine Chemical compound C1C(C)C(N)C(C)CC1CC1CC(C)C(N)C(C)C1 JHCBFGGESJQAIQ-UHFFFAOYSA-N 0.000 description 1
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- IJJNNSUCZDJDLP-UHFFFAOYSA-N 4-[1-(3,4-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 IJJNNSUCZDJDLP-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- SDCCEDFBPGSCAG-UHFFFAOYSA-N 4-[2-(4-amino-3,5-diethylcyclohexyl)propan-2-yl]-2,6-diethylcyclohexan-1-amine Chemical compound CCC1CC(CC(CC)C1N)C(C)(C)C1CC(CC)C(N)C(CC)C1 SDCCEDFBPGSCAG-UHFFFAOYSA-N 0.000 description 1
- PEFNOPTWQPSGBF-UHFFFAOYSA-N 4-[2-(4-amino-3,5-dimethylcyclohexyl)propan-2-yl]-2,6-dimethylcyclohexan-1-amine Chemical compound C1C(C)C(N)C(C)CC1C(C)(C)C1CC(C)C(N)C(C)C1 PEFNOPTWQPSGBF-UHFFFAOYSA-N 0.000 description 1
- ZHVYIZVNKGAJBE-UHFFFAOYSA-N 4-[2-(4-amino-3-methylcyclohexyl)propan-2-yl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1C(C)(C)C1CC(C)C(N)CC1 ZHVYIZVNKGAJBE-UHFFFAOYSA-N 0.000 description 1
- BDBZTOMUANOKRT-UHFFFAOYSA-N 4-[2-(4-aminocyclohexyl)propan-2-yl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1C(C)(C)C1CCC(N)CC1 BDBZTOMUANOKRT-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- VZZOONBAZHZSEB-UHFFFAOYSA-N 4-[3-[3-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(S(=O)(=O)C=2C=C(OC=3C=CC(N)=CC=3)C=CC=2)=C1 VZZOONBAZHZSEB-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical compound C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- ILCGTNBULCHWOE-UHFFFAOYSA-N 4-[[4-aminobutyl(dimethyl)silyl]oxy-dimethylsilyl]butan-1-amine Chemical compound NCCCC[Si](C)(C)O[Si](C)(C)CCCCN ILCGTNBULCHWOE-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-PZFLKRBQSA-N 4-amino-3,5-ditritiobenzoic acid Chemical compound [3H]c1cc(cc([3H])c1N)C(O)=O ALYNCZNDIQEVRV-PZFLKRBQSA-N 0.000 description 1
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 1
- WCDSVWRUXWCYFN-UHFFFAOYSA-N 4-aminobenzenethiol Chemical compound NC1=CC=C(S)C=C1 WCDSVWRUXWCYFN-UHFFFAOYSA-N 0.000 description 1
- ABJQKDJOYSQVFX-UHFFFAOYSA-N 4-aminonaphthalen-1-ol Chemical compound C1=CC=C2C(N)=CC=C(O)C2=C1 ABJQKDJOYSQVFX-UHFFFAOYSA-N 0.000 description 1
- HZVWUBNSJFILOV-UHFFFAOYSA-N 4-aminonaphthalen-2-ol Chemical compound C1=CC=C2C(N)=CC(O)=CC2=C1 HZVWUBNSJFILOV-UHFFFAOYSA-N 0.000 description 1
- GTCAZWRERBLCFJ-UHFFFAOYSA-N 4-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(N)=CC=C(C(O)=O)C2=C1 GTCAZWRERBLCFJ-UHFFFAOYSA-N 0.000 description 1
- JHENTVXBIZIMMA-UHFFFAOYSA-N 4-aminonaphthalene-1-thiol Chemical compound C1=CC=C2C(N)=CC=C(S)C2=C1 JHENTVXBIZIMMA-UHFFFAOYSA-N 0.000 description 1
- HLYLEARJBJRRTJ-UHFFFAOYSA-N 4-aminonaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(N)=CC(C(O)=O)=CC2=C1 HLYLEARJBJRRTJ-UHFFFAOYSA-N 0.000 description 1
- AREXLWHDUHMFQE-UHFFFAOYSA-N 4-aminonaphthalene-2-thiol Chemical compound C1=CC=C2C(N)=CC(S)=CC2=C1 AREXLWHDUHMFQE-UHFFFAOYSA-N 0.000 description 1
- IASBMUIXBJNMDW-UHFFFAOYSA-N 4-aminonicotinic acid Chemical compound NC1=CC=NC=C1C(O)=O IASBMUIXBJNMDW-UHFFFAOYSA-N 0.000 description 1
- BSAWDWUYBRFYFY-UHFFFAOYSA-N 4-aminoquinolin-8-ol Chemical compound C1=CC=C2C(N)=CC=NC2=C1O BSAWDWUYBRFYFY-UHFFFAOYSA-N 0.000 description 1
- YNUVMGHGDJXUHN-UHFFFAOYSA-N 4-aminoquinoline-8-thiol Chemical compound C1=CC=C2C(N)=CC=NC2=C1S YNUVMGHGDJXUHN-UHFFFAOYSA-N 0.000 description 1
- WUBBRNOQWQTFEX-UHFFFAOYSA-N 4-aminosalicylic acid Chemical compound NC1=CC=C(C(O)=O)C(O)=C1 WUBBRNOQWQTFEX-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- JXYITCJMBRETQX-UHFFFAOYSA-N 4-ethynylaniline Chemical compound NC1=CC=C(C#C)C=C1 JXYITCJMBRETQX-UHFFFAOYSA-N 0.000 description 1
- SJXHLZCPDZPBPW-UHFFFAOYSA-N 4-ethynylbenzoic acid Chemical compound OC(=O)C1=CC=C(C#C)C=C1 SJXHLZCPDZPBPW-UHFFFAOYSA-N 0.000 description 1
- VRPMGUALLSTNQM-UHFFFAOYSA-N 4-ethynylnaphthalen-1-amine Chemical compound C1=CC=C2C(N)=CC=C(C#C)C2=C1 VRPMGUALLSTNQM-UHFFFAOYSA-N 0.000 description 1
- ICZVRYSMHMDVAG-UHFFFAOYSA-N 4-ethynylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N)=CC(C#C)=C21 ICZVRYSMHMDVAG-UHFFFAOYSA-N 0.000 description 1
- AWWSLTXLFWUHST-UHFFFAOYSA-N 4-ethynylnaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C#C)C2=C1 AWWSLTXLFWUHST-UHFFFAOYSA-N 0.000 description 1
- QIXTZHZGNAISAE-UHFFFAOYSA-N 4-ethynylnaphthalene-2-carboxylic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC(C#C)=C21 QIXTZHZGNAISAE-UHFFFAOYSA-N 0.000 description 1
- CCTOEAMRIIXGDJ-UHFFFAOYSA-N 4-hydroxy-2-benzofuran-1,3-dione Chemical compound OC1=CC=CC2=C1C(=O)OC2=O CCTOEAMRIIXGDJ-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- PSAGPCOTGOTBQB-UHFFFAOYSA-N 4-hydroxynaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(O)C2=C1 PSAGPCOTGOTBQB-UHFFFAOYSA-N 0.000 description 1
- NIOAVQYSSKOCQP-UHFFFAOYSA-N 4-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC(O)=C21 NIOAVQYSSKOCQP-UHFFFAOYSA-N 0.000 description 1
- LMJXSOYPAOSIPZ-UHFFFAOYSA-N 4-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=C(S)C=C1 LMJXSOYPAOSIPZ-UHFFFAOYSA-N 0.000 description 1
- VJSGJGHLMKUIFY-UHFFFAOYSA-N 4-sulfanylnaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(S)C2=C1 VJSGJGHLMKUIFY-UHFFFAOYSA-N 0.000 description 1
- XZCBVCRSAHQOER-UHFFFAOYSA-N 4-sulfanylnaphthalene-2-carboxylic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC(S)=C21 XZCBVCRSAHQOER-UHFFFAOYSA-N 0.000 description 1
- HWAQOZGATRIYQG-UHFFFAOYSA-N 4-sulfobenzoic acid Chemical compound OC(=O)C1=CC=C(S(O)(=O)=O)C=C1 HWAQOZGATRIYQG-UHFFFAOYSA-N 0.000 description 1
- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- DGQOZCNCJKEVOA-UHFFFAOYSA-N 5-(2,5-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1CC(=O)OC1=O DGQOZCNCJKEVOA-UHFFFAOYSA-N 0.000 description 1
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 description 1
- FMACFWAQBPYRFO-UHFFFAOYSA-N 5-[9-(1,3-dioxo-2-benzofuran-5-yl)fluoren-9-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 FMACFWAQBPYRFO-UHFFFAOYSA-N 0.000 description 1
- ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 5-aminonaphthalen-1-ol Chemical compound C1=CC=C2C(N)=CC=CC2=C1O ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 0.000 description 1
- FSBRKZMSECKELY-UHFFFAOYSA-N 5-aminonaphthalen-2-ol Chemical compound OC1=CC=C2C(N)=CC=CC2=C1 FSBRKZMSECKELY-UHFFFAOYSA-N 0.000 description 1
- FPKNJPIDCMAIDW-UHFFFAOYSA-N 5-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(N)=CC=CC2=C1C(O)=O FPKNJPIDCMAIDW-UHFFFAOYSA-N 0.000 description 1
- WGRZTSLWBZOVFI-UHFFFAOYSA-N 5-aminonaphthalene-1-thiol Chemical compound C1=CC=C2C(N)=CC=CC2=C1S WGRZTSLWBZOVFI-UHFFFAOYSA-N 0.000 description 1
- XVOBQVZYYPJXCK-UHFFFAOYSA-N 5-aminonaphthalene-2-carboxylic acid Chemical compound OC(=O)C1=CC=C2C(N)=CC=CC2=C1 XVOBQVZYYPJXCK-UHFFFAOYSA-N 0.000 description 1
- ZHUYLNSBLAZTRJ-UHFFFAOYSA-N 5-aminonaphthalene-2-thiol Chemical compound SC1=CC=C2C(N)=CC=CC2=C1 ZHUYLNSBLAZTRJ-UHFFFAOYSA-N 0.000 description 1
- BYIORJAACCWFPU-UHFFFAOYSA-N 5-aminonicotinic acid Chemical compound NC1=CN=CC(C(O)=O)=C1 BYIORJAACCWFPU-UHFFFAOYSA-N 0.000 description 1
- YDEUKNRKEYICTH-UHFFFAOYSA-N 5-aminoquinolin-8-ol Chemical compound C1=CC=C2C(N)=CC=C(O)C2=N1 YDEUKNRKEYICTH-UHFFFAOYSA-N 0.000 description 1
- DDJGBTRFBDNVIW-UHFFFAOYSA-N 5-aminoquinoline-8-thiol Chemical compound C1=CC=C2C(N)=CC=C(S)C2=N1 DDJGBTRFBDNVIW-UHFFFAOYSA-N 0.000 description 1
- CQQJVGOAXKPFLD-UHFFFAOYSA-N 5-ethynylnaphthalen-2-amine Chemical compound C#CC1=CC=CC2=CC(N)=CC=C21 CQQJVGOAXKPFLD-UHFFFAOYSA-N 0.000 description 1
- PBLRRQVVWAHEKS-UHFFFAOYSA-N 5-ethynylnaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C#C PBLRRQVVWAHEKS-UHFFFAOYSA-N 0.000 description 1
- DRBKSABBNPZXOG-UHFFFAOYSA-N 5-ethynylnaphthalene-2-carboxylic acid Chemical compound C#CC1=CC=CC2=CC(C(=O)O)=CC=C21 DRBKSABBNPZXOG-UHFFFAOYSA-N 0.000 description 1
- NYYMNZLORMNCKK-UHFFFAOYSA-N 5-hydroxynaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1O NYYMNZLORMNCKK-UHFFFAOYSA-N 0.000 description 1
- SMAMQSIENGBTRV-UHFFFAOYSA-N 5-hydroxynaphthalene-2-carboxylic acid Chemical compound OC1=CC=CC2=CC(C(=O)O)=CC=C21 SMAMQSIENGBTRV-UHFFFAOYSA-N 0.000 description 1
- VTUGNNIWJSWUSP-UHFFFAOYSA-N 5-sulfanylnaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1S VTUGNNIWJSWUSP-UHFFFAOYSA-N 0.000 description 1
- NQSLRCGJQDKCHO-UHFFFAOYSA-N 5-sulfanylnaphthalene-2-carboxylic acid Chemical compound SC1=CC=CC2=CC(C(=O)O)=CC=C21 NQSLRCGJQDKCHO-UHFFFAOYSA-N 0.000 description 1
- QYFYIOWLBSPSDM-UHFFFAOYSA-N 6-aminonaphthalen-1-ol Chemical compound OC1=CC=CC2=CC(N)=CC=C21 QYFYIOWLBSPSDM-UHFFFAOYSA-N 0.000 description 1
- SERBLGFKBWPCJD-UHFFFAOYSA-N 6-aminonaphthalen-2-ol Chemical compound C1=C(O)C=CC2=CC(N)=CC=C21 SERBLGFKBWPCJD-UHFFFAOYSA-N 0.000 description 1
- CKSZZOAKPXZMAT-UHFFFAOYSA-N 6-aminonaphthalene-1-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(N)=CC=C21 CKSZZOAKPXZMAT-UHFFFAOYSA-N 0.000 description 1
- OTCMXMNFUXNIKQ-UHFFFAOYSA-N 6-aminonaphthalene-1-thiol Chemical compound SC1=CC=CC2=CC(N)=CC=C21 OTCMXMNFUXNIKQ-UHFFFAOYSA-N 0.000 description 1
- NZTPZUIIYNYZKT-UHFFFAOYSA-N 6-aminonaphthalene-2-carboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(N)=CC=C21 NZTPZUIIYNYZKT-UHFFFAOYSA-N 0.000 description 1
- RMSBBNHNSZBDOJ-UHFFFAOYSA-N 6-aminonaphthalene-2-thiol Chemical compound C1=C(S)C=CC2=CC(N)=CC=C21 RMSBBNHNSZBDOJ-UHFFFAOYSA-N 0.000 description 1
- ZCIFWRHIEBXBOY-UHFFFAOYSA-N 6-aminonicotinic acid Chemical compound NC1=CC=C(C(O)=O)C=N1 ZCIFWRHIEBXBOY-UHFFFAOYSA-N 0.000 description 1
- YWIDJMFOZRIXSC-UHFFFAOYSA-N 6-ethynylnaphthalen-1-amine Chemical compound C#CC1=CC=C2C(N)=CC=CC2=C1 YWIDJMFOZRIXSC-UHFFFAOYSA-N 0.000 description 1
- AVDVMYQBZCZBQW-UHFFFAOYSA-N 6-ethynylnaphthalen-2-amine Chemical compound C1=C(C#C)C=CC2=CC(N)=CC=C21 AVDVMYQBZCZBQW-UHFFFAOYSA-N 0.000 description 1
- BWLLTHWGXJNEOO-UHFFFAOYSA-N 6-ethynylnaphthalene-1-carboxylic acid Chemical compound C#CC1=CC=C2C(C(=O)O)=CC=CC2=C1 BWLLTHWGXJNEOO-UHFFFAOYSA-N 0.000 description 1
- WSUYONLKFXZZRV-UHFFFAOYSA-N 7-aminonaphthalen-2-ol Chemical compound C1=CC(O)=CC2=CC(N)=CC=C21 WSUYONLKFXZZRV-UHFFFAOYSA-N 0.000 description 1
- BFBAHPDPLUEECU-UHFFFAOYSA-N 7-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(N)=CC=C21 BFBAHPDPLUEECU-UHFFFAOYSA-N 0.000 description 1
- NSLJDNHNUHPTRB-UHFFFAOYSA-N 7-aminonaphthalene-1-thiol Chemical compound C1=CC=C(S)C2=CC(N)=CC=C21 NSLJDNHNUHPTRB-UHFFFAOYSA-N 0.000 description 1
- NBPYPKQPLKDTKB-UHFFFAOYSA-N 7-aminonaphthalene-2-carboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(N)=CC=C21 NBPYPKQPLKDTKB-UHFFFAOYSA-N 0.000 description 1
- REMRJGQQKYABFP-UHFFFAOYSA-N 7-ethynylnaphthalen-1-amine Chemical compound C1=C(C#C)C=C2C(N)=CC=CC2=C1 REMRJGQQKYABFP-UHFFFAOYSA-N 0.000 description 1
- WOCIZHLFJWDCCB-UHFFFAOYSA-N 7-ethynylnaphthalen-2-amine Chemical compound C1=CC(C#C)=CC2=CC(N)=CC=C21 WOCIZHLFJWDCCB-UHFFFAOYSA-N 0.000 description 1
- ZPBZRIPGGXCCOU-UHFFFAOYSA-N 7-ethynylnaphthalene-1-carboxylic acid Chemical compound C1=C(C#C)C=C2C(C(=O)O)=CC=CC2=C1 ZPBZRIPGGXCCOU-UHFFFAOYSA-N 0.000 description 1
- FPWYOZBHNWGHPQ-UHFFFAOYSA-N 7-ethynylnaphthalene-2-carboxylic acid Chemical compound C1=CC(C#C)=CC2=CC(C(=O)O)=CC=C21 FPWYOZBHNWGHPQ-UHFFFAOYSA-N 0.000 description 1
- QDTDKYHPHANITQ-UHFFFAOYSA-N 7-methyloctan-1-ol Chemical compound CC(C)CCCCCCO QDTDKYHPHANITQ-UHFFFAOYSA-N 0.000 description 1
- HMNPDEGBVWDHAR-UHFFFAOYSA-N 8-aminonaphthalen-1-ol Chemical compound C1=CC(O)=C2C(N)=CC=CC2=C1 HMNPDEGBVWDHAR-UHFFFAOYSA-N 0.000 description 1
- KVHHMYZBFBSVDI-UHFFFAOYSA-N 8-aminonaphthalen-2-ol Chemical compound C1=C(O)C=C2C(N)=CC=CC2=C1 KVHHMYZBFBSVDI-UHFFFAOYSA-N 0.000 description 1
- WADVNNXCMDTMFG-UHFFFAOYSA-N 8-aminonaphthalene-1-thiol Chemical compound C1=CC(S)=C2C(N)=CC=CC2=C1 WADVNNXCMDTMFG-UHFFFAOYSA-N 0.000 description 1
- PBWULNOSRHQTHZ-UHFFFAOYSA-N 8-aminonaphthalene-2-carboxylic acid Chemical compound C1=C(C(O)=O)C=C2C(N)=CC=CC2=C1 PBWULNOSRHQTHZ-UHFFFAOYSA-N 0.000 description 1
- ZBJJIISFJKHEBB-UHFFFAOYSA-N 8-aminonaphthalene-2-thiol Chemical compound C1=C(S)C=C2C(N)=CC=CC2=C1 ZBJJIISFJKHEBB-UHFFFAOYSA-N 0.000 description 1
- NELHPYYMPHEHKN-UHFFFAOYSA-N 8-ethynylnaphthalen-1-amine Chemical compound C1=CC(C#C)=C2C(N)=CC=CC2=C1 NELHPYYMPHEHKN-UHFFFAOYSA-N 0.000 description 1
- LYYNPXUMSSLQLF-UHFFFAOYSA-N 8-ethynylnaphthalen-2-amine Chemical compound C1=CC=C(C#C)C2=CC(N)=CC=C21 LYYNPXUMSSLQLF-UHFFFAOYSA-N 0.000 description 1
- SZMUNCBTPDLAGM-UHFFFAOYSA-N 8-ethynylnaphthalene-1-carboxylic acid Chemical compound C1=CC(C#C)=C2C(C(=O)O)=CC=CC2=C1 SZMUNCBTPDLAGM-UHFFFAOYSA-N 0.000 description 1
- QRIXVVLMGPYOFP-UHFFFAOYSA-N 8-ethynylnaphthalene-2-carboxylic acid Chemical compound C1=CC=C(C#C)C2=CC(C(=O)O)=CC=C21 QRIXVVLMGPYOFP-UHFFFAOYSA-N 0.000 description 1
- SHOOSJLGRQTMFC-UHFFFAOYSA-N 8-hydroxynaphthalene-1-carboxylic acid Chemical compound C1=CC(O)=C2C(C(=O)O)=CC=CC2=C1 SHOOSJLGRQTMFC-UHFFFAOYSA-N 0.000 description 1
- ZPCQQOXOXNMOIJ-UHFFFAOYSA-N 8-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=CC=C(O)C2=CC(C(=O)O)=CC=C21 ZPCQQOXOXNMOIJ-UHFFFAOYSA-N 0.000 description 1
- CUIJVFOKZZPKKO-UHFFFAOYSA-N 8-sulfanylnaphthalene-1-carboxylic acid Chemical compound C1=CC(S)=C2C(C(=O)O)=CC=CC2=C1 CUIJVFOKZZPKKO-UHFFFAOYSA-N 0.000 description 1
- PRRFQAVIPFFRRL-UHFFFAOYSA-N 8-sulfanylnaphthalene-2-carboxylic acid Chemical compound C1=CC=C(S)C2=CC(C(=O)O)=CC=C21 PRRFQAVIPFFRRL-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- HXQPUEQDBSPXTE-UHFFFAOYSA-N Diisobutylcarbinol Chemical compound CC(C)CC(O)CC(C)C HXQPUEQDBSPXTE-UHFFFAOYSA-N 0.000 description 1
- GZDFHIJNHHMENY-UHFFFAOYSA-N Dimethyl dicarbonate Chemical compound COC(=O)OC(=O)OC GZDFHIJNHHMENY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004439 Isononyl alcohol Substances 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- NRTMJDNEXVMKPP-UHFFFAOYSA-N NC1=C(C=CC2=CC=CC=C12)O.OC1=CC2=CC=CC=C2C=C1N Chemical compound NC1=C(C=CC2=CC=CC=C12)O.OC1=CC2=CC=CC=C2C=C1N NRTMJDNEXVMKPP-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- QSJASRPTIQTRLI-UHFFFAOYSA-N Nc1cccc(c1)C(=O)Nc1cc(ccc1O)S(=O)(=O)c1ccc(O)c(NC(=O)c2cccc(N)c2)c1 Chemical compound Nc1cccc(c1)C(=O)Nc1cc(ccc1O)S(=O)(=O)c1ccc(O)c(NC(=O)c2cccc(N)c2)c1 QSJASRPTIQTRLI-UHFFFAOYSA-N 0.000 description 1
- NLGFZYNBNQORLR-UHFFFAOYSA-N O(C1CC(C(CC1)(C(=O)O)C(=O)O)(C(=O)O)C(=O)O)C1CC(C(CC1)(C(=O)O)C(=O)O)(C(=O)O)C(=O)O Chemical compound O(C1CC(C(CC1)(C(=O)O)C(=O)O)(C(=O)O)C(=O)O)C1CC(C(CC1)(C(=O)O)C(=O)O)(C(=O)O)C(=O)O NLGFZYNBNQORLR-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- VLGUBUHHNFCMKI-UHFFFAOYSA-N aminomethoxymethanamine Chemical compound NCOCN VLGUBUHHNFCMKI-UHFFFAOYSA-N 0.000 description 1
- 229960004909 aminosalicylic acid Drugs 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- PASDCCFISLVPSO-UHFFFAOYSA-N benzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1 PASDCCFISLVPSO-UHFFFAOYSA-N 0.000 description 1
- HSDAJNMJOMSNEV-UHFFFAOYSA-N benzyl chloroformate Chemical compound ClC(=O)OCC1=CC=CC=C1 HSDAJNMJOMSNEV-UHFFFAOYSA-N 0.000 description 1
- FHRRJZZGSJXPRQ-UHFFFAOYSA-N benzyl phenylmethoxycarbonyl carbonate Chemical compound C=1C=CC=CC=1COC(=O)OC(=O)OCC1=CC=CC=C1 FHRRJZZGSJXPRQ-UHFFFAOYSA-N 0.000 description 1
- NIDNOXCRFUCAKQ-UHFFFAOYSA-N bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2C(O)=O NIDNOXCRFUCAKQ-UHFFFAOYSA-N 0.000 description 1
- VAYBSUUSYTWKBX-UHFFFAOYSA-N bicyclo[2.2.1]heptane-2,3,3,4-tetracarboxylic acid Chemical compound C1CC2(C(O)=O)C(C(O)=O)(C(O)=O)C(C(=O)O)C1C2 VAYBSUUSYTWKBX-UHFFFAOYSA-N 0.000 description 1
- JGVWEAITTSGNGJ-UHFFFAOYSA-N bicyclo[2.2.1]heptane;n-methylmethanamine Chemical compound CNC.C1CC2CCC1C2 JGVWEAITTSGNGJ-UHFFFAOYSA-N 0.000 description 1
- XQBSPQLKNWMPMG-UHFFFAOYSA-N bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic acid Chemical compound C1CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O XQBSPQLKNWMPMG-UHFFFAOYSA-N 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 239000001055 blue pigment Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- NRDQFWXVTPZZAZ-UHFFFAOYSA-N butyl carbonochloridate Chemical compound CCCCOC(Cl)=O NRDQFWXVTPZZAZ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- HTEAYMWIMWHGNC-UHFFFAOYSA-N carbonochloridic acid Chemical class OC(Cl)=O.OC(Cl)=O HTEAYMWIMWHGNC-UHFFFAOYSA-N 0.000 description 1
- 229960000541 cetyl alcohol Drugs 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical compound OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical compound OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 1
- ACUZDYFTRHEKOS-UHFFFAOYSA-N decan-2-ol Chemical compound CCCCCCCCC(C)O ACUZDYFTRHEKOS-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- GTTPIBRPFDHJHU-UHFFFAOYSA-N decane-1,3-diamine Chemical compound CCCCCCCC(N)CCN GTTPIBRPFDHJHU-UHFFFAOYSA-N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- FFYPMLJYZAEMQB-UHFFFAOYSA-N diethyl pyrocarbonate Chemical compound CCOC(=O)OC(=O)OCC FFYPMLJYZAEMQB-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 239000004316 dimethyl dicarbonate Substances 0.000 description 1
- 235000010300 dimethyl dicarbonate Nutrition 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- XSWSEQPWKOWORN-UHFFFAOYSA-N dodecan-2-ol Chemical compound CCCCCCCCCCC(C)O XSWSEQPWKOWORN-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- RIFGWPKJUGCATF-UHFFFAOYSA-N ethyl chloroformate Chemical compound CCOC(Cl)=O RIFGWPKJUGCATF-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000001046 green dye Substances 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- ZNYQHFLBAPNPRC-UHFFFAOYSA-N heptadecan-2-ol Chemical compound CCCCCCCCCCCCCCCC(C)O ZNYQHFLBAPNPRC-UHFFFAOYSA-N 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910001872 inorganic gas Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000004668 long chain fatty acids Chemical class 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- KBOPZPXVLCULAV-UHFFFAOYSA-N mesalamine Chemical compound NC1=CC=C(O)C(C(O)=O)=C1 KBOPZPXVLCULAV-UHFFFAOYSA-N 0.000 description 1
- 229960004963 mesalazine Drugs 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QARBMVPHQWIHKH-UHFFFAOYSA-N methanesulfonyl chloride Chemical compound CS(Cl)(=O)=O QARBMVPHQWIHKH-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229940043348 myristyl alcohol Drugs 0.000 description 1
- VGGNVBNNVSIGKG-UHFFFAOYSA-N n,n,2-trimethylaziridine-1-carboxamide Chemical compound CC1CN1C(=O)N(C)C VGGNVBNNVSIGKG-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- HNHVTXYLRVGMHD-UHFFFAOYSA-N n-butyl isocyanate Chemical compound CCCCN=C=O HNHVTXYLRVGMHD-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N n-butyl methyl ketone Natural products CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- CHDRADPXNRULGA-UHFFFAOYSA-N naphthalene-1,3-dicarboxylic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC(C(O)=O)=C21 CHDRADPXNRULGA-UHFFFAOYSA-N 0.000 description 1
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- VAWFFNJAPKXVPH-UHFFFAOYSA-N naphthalene-1,6-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(C(=O)O)=CC=C21 VAWFFNJAPKXVPH-UHFFFAOYSA-N 0.000 description 1
- JSKSILUXAHIKNP-UHFFFAOYSA-N naphthalene-1,7-dicarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(C(=O)O)=CC=C21 JSKSILUXAHIKNP-UHFFFAOYSA-N 0.000 description 1
- HRRDCWDFRIJIQZ-UHFFFAOYSA-N naphthalene-1,8-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=CC2=C1 HRRDCWDFRIJIQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QXYWIOWTBOREMG-UHFFFAOYSA-N nonadecan-2-ol Chemical compound CCCCCCCCCCCCCCCCCC(C)O QXYWIOWTBOREMG-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- UFOIOXZLTXNHQH-UHFFFAOYSA-N oxolane-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1OC(C(O)=O)C(C(O)=O)C1C(O)=O UFOIOXZLTXNHQH-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- HVNWRBWNOPYOER-UHFFFAOYSA-N pentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C(C)C(C(O)=O)C(C(O)=O)CC(O)=O HVNWRBWNOPYOER-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- LCUPNHOUKMJAQN-UHFFFAOYSA-N phenoxycarbonyl phenyl carbonate Chemical compound C=1C=CC=CC=1OC(=O)OC(=O)OC1=CC=CC=C1 LCUPNHOUKMJAQN-UHFFFAOYSA-N 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- CAEWJEXPFKNBQL-UHFFFAOYSA-N prop-2-enyl carbonochloridate Chemical compound ClC(=O)OCC=C CAEWJEXPFKNBQL-UHFFFAOYSA-N 0.000 description 1
- IVRIRQXJSNCSPQ-UHFFFAOYSA-N propan-2-yl carbonochloridate Chemical compound CC(C)OC(Cl)=O IVRIRQXJSNCSPQ-UHFFFAOYSA-N 0.000 description 1
- RLUCXJBHKHIDSP-UHFFFAOYSA-N propane-1,2-diol;propanoic acid Chemical compound CCC(O)=O.CC(O)CO RLUCXJBHKHIDSP-UHFFFAOYSA-N 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- UJJDEOLXODWCGK-UHFFFAOYSA-N tert-butyl carbonochloridate Chemical compound CC(C)(C)OC(Cl)=O UJJDEOLXODWCGK-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- FVHPPQILUTTWCV-UHFFFAOYSA-N undecane-1,3,7,9-tetracarboxylic acid Chemical compound CCC(C(O)=O)CC(C(O)=O)CCCC(C(O)=O)CCC(O)=O FVHPPQILUTTWCV-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/14—Polyamide-imides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Definitions
- the present invention relates to a resin laminate film, a laminate including the same, a TFT substrate, an organic EL element, and methods for producing them.
- Resin film is more flexible than glass, hard to break, and lightweight. Recently, studies have been made to make a display flexible by using a resin film as a substrate of a flat panel display.
- examples of the resin film include polyester, polyamide, polyimide, polyamideimide, polybenzoxazole, polycarbonate, polyethersulfone, acrylic, and epoxy.
- a resin film in order to use a resin film as an alternative material for a glass substrate such as a display device or an optical element, heat resistance, transparency in the visible light region, and the like are required.
- the display device include an organic electroluminescence (organic EL) display, a liquid crystal display, and electronic paper.
- examples of the optical element include a color filter, and examples of other members include a touch panel.
- membrane from a support substrate is mentioned.
- a laser peeling technique using ultraviolet light is disclosed (for example, refer to Patent Documents 1 and 2).
- the resin near the interface with the support substrate is thermally decomposed by heat generated by the absorption of the laser light into the resin, so that the resin film is separated from the support substrate.
- the heat resistant resin film represented by polyimide has a problem that the irradiation energy required for peeling is high and the laser peelability is poor.
- transparent polyimide having a high light transmittance in the visible light region has a higher irradiation energy required for peeling than colored polyimide. This is considered to be due to the low absorbance in the ultraviolet region in addition to the heat resistance.
- an object of the present invention is to provide a resin laminate film having low irradiation energy required for laser peeling using ultraviolet light in the wavelength range.
- the present invention is a resin laminated film having a polyimide resin film on at least one surface of the resin film, wherein the polyimide resin film is a polyimide resin film A described below.
- Polyimide resin film A a polyimide resin film having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film having a thickness of 100 nm is formed.
- the resin laminated film of the present invention can reduce the irradiation energy required for laser peeling from the support substrate.
- Sectional drawing which shows an example of a color filter substrate Sectional view showing an example of TFT substrate Sectional drawing which shows an example of an organic electroluminescent element display Sectional drawing which shows an example of an organic electroluminescent element display
- the resin laminate film of the present invention is a resin laminate film having a polyimide resin film on at least one surface of the resin film, and the polyimide resin film is a polyimide laminate film A described below.
- Polyimide resin film A a polyimide resin film having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film having a thickness of 100 nm is formed.
- the light transmittance is preferably less than 50% at at least one of wavelengths 308 nm, 343 nm, 351 nm, and 355 nm.
- the minimum value of the light transmittance in the wavelength region of 300 to 400 nm is less than 50% is referred to as “physical property (A)”.
- the wavelength that gives the minimum value of the light transmittance in the wavelength range of 300 to 400 nm is ⁇ 1 .
- the polyimide resin film A satisfies the physical property (A)
- the light absorption of a laser having a wavelength in the vicinity of ⁇ 1 is large. Therefore, heat generated by light absorption is large, and as a result, irradiation energy necessary for laser peeling is lower than that of a polyimide resin film that does not satisfy the physical property (A).
- a decrease in irradiation energy necessary for laser peeling is expressed as improved laser peelability.
- the smoothness of the peeled surface of the resin film can be increased.
- the lower the irradiation energy the smaller the maximum height (Rz) of the peeled surface.
- the film forming property of the inorganic film on the release surface can be improved. If the release surface has irregularities, the inorganic film may reduce the coverage of the release surface or cause pinhole defects in the inorganic film. These lead to deterioration of the properties of the inorganic film, for example, causing a decrease in gas barrier properties of the inorganic film. Therefore, it is preferable that the smoothness of the release surface is high.
- the smoothness of the peeled surface can be evaluated with a surface roughness meter, AFM, or the like.
- arithmetic average roughness (Ra), maximum peak height (Rp) of the roughness curve, maximum valley depth (Rv) of the roughness curve, and the like can be used as the smoothness index. .
- the polyimide contained in the polyimide resin film A is not particularly limited, but the main component of the diamine residue in the polyimide is preferably derived from the following (B) diamine derivative.
- B When an N-methyl-2-pyrrolidone solution having a concentration of 1 ⁇ 10 ⁇ 4 mol / L is used, the maximum absorbance under the condition of an optical path length of 1 cm in the wavelength range of 300 to 400 nm is 0. More than 6 diamine derivatives.
- the diamine derivative is an N-methyl-2-pyrrolidone solution having a concentration of 1 ⁇ 10 ⁇ 4 mol / L
- the light path length is 1 cm at least at one of wavelengths 308 nm, 343 nm, 351 nm, and 355 nm. It is more preferable that the diamine derivative has an absorbance of greater than 0.6.
- diamine derivative examples include a diamine compound, a diisocyanate compound, a diamine compound reacted with a silylating agent (such as an amide silylating agent), and the like.
- a silylating agent such as an amide silylating agent
- the polyimide resin film A In order for the polyimide resin film A to satisfy the physical property (A), it is necessary that at least one of an acid dianhydride derivative or a diamine derivative, which is a polyimide raw material monomer, has a high absorbance in a wavelength region of 300 to 400 nm. . Compared with acid dianhydride derivatives, diamine derivatives have a higher degree of freedom in molecular design, so it is easy to obtain diamine derivatives with high absorbance in the wavelength range of 300 to 400 nm.
- (B) a polyimide mainly composed of a diamine residue derived from a diamine derivative is referred to as “polyimide B”.
- the main component means that the proportion of the diamine residue in the total diamine residues of the polyimide is higher than the total proportion of all other diamine residues.
- polyimide B In polyimide B, the minimum value of the light transmittance is given at a wavelength of lambda 2 vicinity, the optical absorption of the laser with a wavelength of lambda 2 vicinity is increased. Therefore, the heat generated by light absorption is large, and as a result, the irradiation energy required for laser peeling is lower than that of polyimide other than polyimide B.
- the method for producing the resin laminated film of the present invention is not particularly limited, but is preferably produced by a two-stage film forming process as described later.
- a polyimide resin film A is formed as a first resin film (hereinafter referred to as “resin film 1”) on a support substrate such as a glass substrate, and then a second resin film is formed on the resin film 1.
- resin film 2 is formed, and laser irradiation is performed from the glass substrate side to peel the resin laminated film from the glass substrate. Since the resin film 1 exists on the glass substrate, the resin laminated film exhibits good laser peelability regardless of the type of the resin film 2.
- the wavelength of the irradiation laser is not particularly limited, and examples thereof include 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm. Further, the light source is not limited to the laser as long as the resin laminated film is peeled off, and a high-pressure mercury lamp, LED, or the like may be used.
- Such a resin laminated film preferably has a configuration in which at least the resin film 1 and the resin film 2 are laminated in this order.
- the number of the resin films 2 to be stacked is not particularly limited, and the resin film 2 may be a single layer or two or more layers.
- the resin film 2 may include a resin layer made of the same polyimide resin as the resin film 1. Good.
- the number of the laminated resin film is preferably 2 from the viewpoint of the transparency of the resin laminated film and the adhesion between the layers. That is, the resin film 2 is preferably a single layer.
- an inorganic film may be inserted between the resin film 1 and the resin film 2. It is preferable to insert an inorganic film because the gas barrier property of the laminated film is improved.
- the gas barrier layer on the resin film plays a role of preventing permeation of water vapor, oxygen and the like.
- it may be required to provide a gas barrier property to a resin laminated film used as a substrate.
- Whether the resin film present on the surface of the resin laminated film of the present invention satisfies the physical property A is determined by etching the resin laminated body from the side opposite to the surface to be measured until the thickness reaches 100 nm, and the remaining film This can be confirmed by measuring the light transmittance.
- measurement can be performed by the following procedure.
- the film thickness of the resin laminated film is measured with a step meter, a scanning electron microscope (SEM), a micrometer, or the like.
- the film thickness of each resin layer in the resin laminated film can also be measured by observing the fracture surface of the resin laminated film by SEM.
- the surface to be measured is fixed to the glass substrate with an adhesive tape or the like, and a technique such as glow discharge emission analyzer (GD-OES), reactive ion etching (RIE), gas cluster ion beam (GCIB) is used.
- GD-OES glow discharge emission analyzer
- RIE reactive ion etching
- GCIB gas cluster ion beam
- the etching method is not particularly limited, but GD-OES and GCIB are preferable because elemental analysis of the resin film can be performed simultaneously. After etching to a film thickness of 100 nm, a light transmission spectrum is measured using a microspectroscope. The same etching and light transmittance measurement are performed at five locations, and the average value thereof is taken as the light transmittance.
- the resin composition for example, the molecular structure of the diamine residue in the resin film 1
- the film thickness of each layer in the resin laminated film of the present invention are precisely determined by total composition analysis by TPD-MS, TOF-SIMS, and IR spectrum measurement. It can be analyzed by using the oblique cutting method.
- the minimum value of the light transmittance of the polyimide resin film A is not particularly limited as long as it is less than 50%, but is preferably less than 40%, more preferably less than 30%, and further preferably less than 20%. As the light transmittance decreases, the irradiation energy required for laser peeling decreases, and when it is less than 20%, the effect of reducing the irradiation energy is particularly great.
- the maximum absorbance of the diamine derivative is not particularly limited as long as it exceeds 0.6, but is preferably 0.8 or more, and more preferably 1.0 or more. As the absorbance increases, the irradiation energy required for laser peeling decreases, and when it is 1.0 or more, the effect of reducing the irradiation energy is particularly great.
- the thickness of the resin film 1 and the resin film 2 is not particularly limited, but from the viewpoint of the transparency, heat resistance, linear thermal expansion coefficient (hereinafter, also referred to as CTE) of the resin laminated film, the thickness of the resin film 1
- the thickness is preferably 100 nm to 1 ⁇ m, more preferably 100 nm to 0.5 ⁇ m.
- the thickness of the resin film 1 is 1 ⁇ m or less, the transparency of the resin film 1 in the visible light region is increased. Therefore, the transparency of the resin laminated film in the visible light region is not impaired.
- the thickness of the resin film 1 is preferably thinner than the thickness of the resin film 2.
- the ratio of the resin film 1 in the resin laminated film is not particularly limited, but the ratio of the resin film 1 is preferably 50% or less, and more preferably 10% or less.
- the ratio of the resin film 1 is preferably 50% or less, and more preferably 10% or less.
- the CTE of the resin laminate film of the present invention is not particularly specified, but is preferably in the range of ⁇ 10 to 30 ppm / ° C. in the range of 50 ° C. to 200 ° C. By being in this range, warpage of the substrate when the resin laminated film is formed on the support substrate can be reduced, and as a result, an element such as a TFT can be produced on the resin laminated film with high accuracy.
- the range of ⁇ 10 to 20 ppm / ° C. is more preferable, and the range of ⁇ 10 to 10 ppm / ° C. is more preferable.
- the glass transition temperature (Tg) of the resin laminate film of the present invention is not particularly specified, but is preferably 300 ° C. or higher. By being in this range, the film forming temperature of the inorganic film on the resin laminated film can be increased, and for example, the performance of the gas barrier layer and the TFT can be improved. In particular, since a temperature of 350 ° C. or higher is generally used when forming a TFT, the Tg of the resin laminated film is more preferably 350 ° C. or higher, and preferably 400 ° C. or higher. Further preferred.
- the transparency of the resin laminate film of the present invention is not particularly specified, but the substrate is required to be transparent in the visible light region, such as a base material of a bottom emission type organic EL display, a color filter base material, a touch panel base material, etc. When it is used, it is preferable that the resin laminated film is transparent.
- transparent means that the transmitted light viewed through the resin laminated film has a color tone close to white, and more specifically, the transmission chromaticity in the XYZ color system chromaticity diagram of the resin laminated film.
- the coordinates (x, y) are (x ⁇ x0) / 2 + (y ⁇ y0) /2 ⁇ 0.01 with respect to the chromaticity coordinates (x0, y0) of the light source.
- transmission chromaticity coordinates refers to the coordinates of transmission chromaticity in the CIE 1931 color system measured in the field of view twice.
- the light source include a C light source.
- the light transmittance at a wavelength of 400 nm to 800 nm is 80% or more. There are some cases.
- the transmission chromaticity coordinates and the light transmittance can be measured by forming the resin laminated film of the present invention on a glass substrate and using an ultraviolet-visible spectrophotometer or a chromaticity meter.
- the resin film 1 is not particularly limited as long as it is a polyimide resin film satisfying the physical property A, but the polyimide component preferably includes polyimide B, and the polyimide component is more preferably composed of polyimide B.
- the diamine derivative has a maximum absorbance of 0 in an optical path length of 1 cm in a wavelength region of 300 to 400 nm in an N-methyl-2-pyrrolidone solution having a concentration of 1 ⁇ 10 ⁇ 4 mol / L.
- Diamine derivatives having a wavelength exceeding .6 for example, bis [4- (4-aminophenoxy) phenyl] sulfone, 9,9-bis (4-aminophenyl) fluorene, 2,2- Bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [3- (3-aminophenoxy) phenyl] sulfone, bis [3- (4 -Aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy) phenyl] ether, 1,4-bis (4-aminophenoxy) Benzene, 1,3-bis (4-aminophenoxy) benzene, bis (4-aminophenoxy) biphenyl, 2,2-bis [3- (3-aminobenzamido) -4-hydroxyphenyl] hexafluor
- A is a single bond, an oxygen atom, a sulfur atom, a sulfonyl group, a phenyl group, a fluorenyl group, or a 2 having 1 to 5 carbon atoms in which a hydrogen atom may be substituted with a halogen atom
- R 1 to R 4 each independently represents a monovalent organic group having 1 to 10 carbon atoms and having at least one amino group.
- Formula (1) includes a hydroxyamide structure
- Formula (2) includes a benzoxazole structure, and these structures are effective for increasing the absorbance in the wavelength range of 300 to 400 nm.
- a diamine compound having a hydroxyamide structure represented by formula (1) or a derivative thereof and an acid dianhydride or a derivative thereof examples thereof include imide ring closure and oxazole ring closure by heating ring closure of a polyimide precursor synthesized by reaction or chemical ring closure reaction.
- a ring closure of a polyimide precursor synthesized by a reaction of a diamine compound having a benzoxazole structure represented by the formula (2) or a derivative thereof and an acid dianhydride or a derivative thereof, or chemical Examples of the ring closure reaction include imide ring closure.
- the heating temperature for imide ring closure is not particularly limited, but is preferably 250 ° C or higher, more preferably 300 ° C or higher.
- the temperature of imide ring closure can be lowered
- the heating temperature for oxazole ring closure is not particularly limited, but is preferably 300 ° C or higher, more preferably 350 ° C or higher.
- the temperature of oxazole ring closure can be reduced by adding an acidic catalyst such as a thermal acid generator.
- the diamine residue of the polyimide of the resin film 1 contains the benzoxazole structure of the formula (2), or A in the formulas (1) and (2) is hexa It is preferably a fluoroisopropylidene group. Since the benzoxazole structure has a higher absorbance at a wavelength of 300 to 400 nm than the hydroxyamide structure, it is effective in reducing the irradiation energy necessary for laser peeling.
- A is a hexafluoroisopropylidene group, it is more easily decomposed thermally than a single bond, a fluorenyl group, a sulfonyl group or the like, which is effective in reducing the irradiation energy necessary for laser peeling.
- A is preferably a hexafluoroisopropylidene group or a sulfonyl group.
- the diamine derivative having the structure represented by the general formula (1) or (2) include, for example, a diamine residue derived from a diamine compound represented by the following chemical formulas (3) to (6). It is particularly preferable to have it as a main component.
- the diamine residue derived from the diamine compound represented by the general formulas (3) to (6) is the main component of the polyimide of the resin film 1, the transparency of the resin film 1 in the visible light region is further improved. Can do. Therefore, the transparency of the resin laminated film is not deteriorated, and it can be suitably used in applications that require transparency in the visible light region. Examples of such applications include base materials for bottom emission type organic EL displays, color filter substrates, touch panel substrates, and the like.
- A is preferably a single bond or a phenyl group. Since the heat resistance of the resin laminated film is further improved because the diamine compound in which A is a single bond or a phenyl group is the main component of the polyimide of the resin film 1, the substrate of a device that requires a high-temperature process in the manufacturing process Can be suitably used. Specifically, an organic EL display substrate that may form a barrier layer between the substrate and the element at a high temperature, and a TFT substrate that may be annealed at a high temperature to ensure mobility and reliability. Etc.
- the polyimide of the resin film 1 is mainly composed of (B) a diamine residue derived from a diamine derivative, it may contain a diamine residue derived from another diamine derivative.
- the main component means that the proportion of the diamine residue in the total diamine residues of the polyimide is higher than the total proportion of all other diamine residues.
- diamine derivatives are not particularly limited and include aromatic diamine compounds, alicyclic diamine compounds, and aliphatic diamine compounds.
- aromatic diamine compounds examples include 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenyl sulfone, 4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 1,4-bis (4-aminophenoxy) benzene, benzidine 2,2'-bis (trifluoromethyl) benzidine, 3,3'-bis (trifluoromethyl) benzidine, 2,2'-dimethylbenzidine, 3,3'-dimethylbenzidine, 2,2 ', 3 3'-tetramethylbenzidine, 2,2'-
- alicyclic diamine compound examples include cyclobutane diamine, isophorone diamine, bicyclo [2,2,1] heptane bismethylamine, tricyclo [3,3,1,13,7] decane-1,3-diamine, 1,2 -Cyclohexyldiamine, 1,3-cyclohexyldiamine, 1,4-cyclohexyldiamine, trans-1,4-cyclohexyldiamine, cis-1,4-cyclohexyldiamine, 4,4'-diaminodicyclohexylmethane, 3,3'- Dimethyl-4,4′-diaminodicyclohexylmethane, 3,3′-diethyl-4,4′-diaminodicyclohexylmethane, 3,3 ′, 5,5′-tetramethyl-4,4′-diaminodicyclohexylmethane, 3 , 3 ′
- Aliphatic diamine compounds include ethylenediamine, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane
- Alkylene diamines such as 1,9-diaminononane and 1,10-diaminodecane
- ethylene glycol diamines such as bis (aminomethyl) ether, bis (2-aminoethyl) ether, bis (3-aminopropyl) ether
- siloxanes such as 1,3-bis (3-aminopropyl) tetramethyldisiloxane, 1,3-bis (4-aminobutyl) tetramethyldisiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydimethylsiloxane
- diamine
- aromatic diamine compounds alicyclic diamine compounds, or aliphatic diamine compounds can be used alone or in combination of two or more.
- the acid dianhydride used for the production of the polyimide in the resin film known ones can be used. It does not specifically limit as acid dianhydride, Aromatic acid dianhydride, alicyclic acid dianhydride, or aliphatic acid dianhydride is mentioned.
- aromatic dianhydrides include pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic dianhydride 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-terphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-oxydiphthalate Acid dianhydride, 2,3,3 ′, 4′-oxydiphthalic dianhydride, 2,3,2 ′, 3′-oxydiphthalic dianhydride, diphenylsulfone-3,3 ′, 4,4′- Tetracarboxylic dianhydride, benzophenone-3,3 ', 4,4'-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride,
- alicyclic acid dianhydrides include 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1S, 2S, 4R, 5R-cyclohexanetetracarboxylic dianhydride, 1R, 2S, 4S, 1,2,4,5-cyclohexanetetracarboxylic dianhydride such as 5R-cyclohexanetetracarboxylic dianhydride, 1,2,3,4-cyclopentanetetracarboxylic dianhydride, 3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,3-dimethyl -1,2,3,4-cyclobutanetetracarboxylic dianhydride, 2,3,4,5-tetrahydrofurantetracarboxylic dianhydride, 3,4-dicarboxy-1-cyclohexyl
- Examples of the aliphatic dianhydride include 1,2,3,4-butanetetracarboxylic dianhydride, 1,2,3,4-pentanetetracarboxylic dianhydride, “Licacid” (registered trademark) BT- 100 (trade name, manufactured by Shin Nippon Rika Co., Ltd.), “Rikacid” (registered trademark) TMEG-100 (trade name, manufactured by Shin Nippon Rika Co., Ltd.), “Rikacid” (registered trademark) TMTA-C (trade name) , New Nippon Rika Co., Ltd.), and derivatives thereof, but are not limited thereto.
- aromatic acid dianhydrides alicyclic acid dianhydrides, or aliphatic acid dianhydrides can be used alone or in combination of two or more.
- the polyimide contained in the polyimide resin film A is preferably a polyimide mainly composed of an aromatic dianhydride residue from the viewpoint of improving heat resistance.
- the aromatic dianhydride residue is a residue derived from pyromellitic dianhydride or 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride
- the heat resistance is reduced in addition to the improvement. This is preferable because the effect of CTE can be obtained.
- the main component is an alicyclic acid dianhydride residue
- a polyimide having an aliphatic acid dianhydride residue as a main component or a main component of a total of an alicyclic acid dianhydride residue and an aliphatic acid dianhydride residue is preferable.
- polyimide B an alicyclic acid dianhydride residue is a main component
- an aliphatic acid dianhydride residue is a main component
- the polyimide which has as a main component the sum total of a group acid dianhydride residue is preferable.
- charge transfer absorption which is one of the causes of polyimide coloring, is suppressed, so that the transparency of the resin film 1 in the visible light region is improved.
- these acid dianhydride residues are more likely to be thermally decomposed than aromatic acid dianhydride residues, the effect of reducing the irradiation intensity necessary for laser peeling is increased.
- mainly composed of an aromatic acid dianhydride residue means that the ratio of the aromatic acid dianhydride residue to the total acid dianhydride residues of the polyimide is all other acid dianhydrides. It means that it is higher than the total ratio of physical residues.
- the main component is an alicyclic acid dianhydride residue
- the ratio of the alicyclic acid dianhydride residue to the total acid dianhydride residues of the polyimide is all other acid dianhydrides. It means that it is higher than the total ratio of physical residues.
- the main component is an aliphatic acid dianhydride residue
- the ratio of the aliphatic acid dianhydride residue to the total acid dianhydride residues of the polyimide is the residue of all other acid dianhydrides. It means that it is higher than the total proportion of groups.
- the main component is the total of alicyclic acid dianhydride residues and aliphatic acid dianhydride residues” means that the alicyclic acid dianhydride residue in the total acid dianhydride residues of the polyimide The sum of the group and aliphatic acid dianhydride residues is higher than the sum of all other acid dianhydride residues.
- the ratio to the total of the acid dianhydrides is not limited, but 75% or more is preferable from the viewpoint of laser peelability.
- cyclobutanetetracarboxylic dianhydride 1S, 2S, 4R, 5R-cyclohexanetetracarboxylic dianhydride 1R, 2S, 4S, 5R-cyclohexanetetracarboxylic dianhydride, 3,3 ′, 4,4′-dicyclohexanetetracarboxylic dianhydride, “Licacid” (registered trademark) BT-100 (Product name, manufactured by Shin Nippon Rika Co., Ltd.), “Rikacid” (registered trademark) TMEG-100 (product name, manufactured by Shin Nippon Rika Co., Ltd.), “Rikacid” (registered trademark) TMTA-C (The above-mentioned product name, manufactured by Shin Nippon Rika Co., Ltd.) and “Rikacid” (registered trademark) TDA-
- cyclobutanetetracarboxylic dianhydride, 1S, 2S, 4R, 5R-cyclohexanetetracarboxylic dianhydride represented by chemical formulas (7) to (10) 1R, 2S, 4S, 5R-cyclohexanetetracarboxylic dianhydride and 3,3 ′, 4,4′-dicyclohexanetetracarboxylic dianhydride are more preferable. That is, the alicyclic acid dianhydride residue in the polyimide is preferably derived from a tetracarboxylic dianhydride represented by any one of formulas (7) to (10).
- Polyimide and polyimide precursor resins such as polyamic acid, polyamic acid ester, and polyamic acid silyl ester may be sealed at both ends with a terminal sealing agent in order to adjust the molecular weight to a preferred range.
- the terminal blocking agent that reacts with the acid dianhydride include monoamines and monohydric alcohols.
- the terminal blocking agent that reacts with the diamine compound include an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, a monoactive ester compound, a dicarbonate compound, and a vinyl ether compound.
- various organic groups can be introduce
- Monoamines used for the acid anhydride group end-capping agent include 5-amino-8-hydroxyquinoline, 4-amino-8-hydroxyquinoline, 1-hydroxy-8-aminonaphthalene, 1-hydroxy-7-amino.
- Examples of the monohydric alcohol used as the acid anhydride group terminal blocking agent include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, 1-pentanol, 2-pentanol, 3 -Pentanol, 1-hexanol, 2-hexanol, 3-hexanol, 1-heptanol, 2-heptanol, 3-heptanol, 1-octanol, 2-octanol, 3-octanol, 1-nonanol, 2-nonanol, 1- Decanol, 2-decanol, 1-undecanol, 2-undecanol, 1-dodecanol, 2-dodecanol, 1-tridecanol, 2-tridecanol, 1-tetradecanol, 2-tetradecanol, 1-pentadecanol, 2- Pentadecanol, 1-hexadecanol, 2 He
- Examples of the acid anhydride, monocarboxylic acid, monoacid chloride compound and monoactive ester compound used as an amino group terminal blocking agent include phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, 3- Acid anhydrides such as hydroxyphthalic anhydride, 2-carboxyphenol, 3-carboxyphenol, 4-carboxyphenol, 2-carboxythiophenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-8- Carboxynaphthalene, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-hydroxy-4-carboxynaphthalene, 1-hydroxy-3-carboxynaphthalene, 1 Hydroxy-2-carboxynaphthalene, 1-mercapto-8-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mer
- dicarbonate compound used as the amino group terminal blocking agent examples include di-tert-butyl dicarbonate, diphenyl dicarbonate, dibenzyl dicarbonate, dimethyl dicarbonate, and diethyl dicarbonate.
- vinyl ether compounds used as amino-terminal end-capping agents include: tert-butyl chloroformate, n-butyl chloroformate, isobutyl chloroformate, benzyl chloroformate, allyl chloroformate, ethyl chloroformate, isopropyl chloroformate, chloroformate Chloroformates such as fluorenylmethyl acid, chloroformate 2,2,2-trichloroethyl, isocyanate compounds such as butyl isocyanate, 1-naphthyl isocyanate, octadecyl isocyanate, phenyl isocyanate, butyl vinyl ether, Cyclohexyl vinyl ether, ethyl vinyl ether, 2-ethylhexyl vinyl ether, isobutyl vinyl ether, isopropyl vinyl ether, n-propyl vinyl ether, tert-butyl vinyl ether, be
- Examples of other compounds used as the amino group terminal blocking agent include benzoyl chloride, methanesulfonic acid chloride, p-toluenesulfonic acid chloride, and phenyl isocyanate.
- the introduction ratio of the acid anhydride group terminal sealing agent is preferably in the range of 0.1 to 60 mol%, particularly preferably 1 to 50 mol%, relative to the acid dianhydride component.
- the introduction ratio of the amino group terminal blocking agent is preferably in the range of 0.1 to 60 mol%, particularly preferably 1 to 50 mol%, relative to the diamine component.
- the molecular structure of the repeating unit of the polyimide resin and the structure of the introduced terminal blocking agent can be confirmed by the following method. For example, it can be easily detected by pyrolysis gas chromatograph (PGC), infrared spectrum and 13 C NMR spectrum measurement. Furthermore, the polymer in which the end-capping agent is introduced is dissolved in an acidic solution and decomposed into an amine component and an acid anhydride component, which are constituent units of the polymer, and this is measured by gas chromatography (GC) or NMR measurement. The end capping agent can be easily detected.
- PPC pyrolysis gas chromatograph
- GC gas chromatography
- NMR gas chromatography
- the resin type of the resin film 2 is not particularly limited, and is a polyimide resin, polybenzoxazole resin, polyamideimide resin, polyamide resin, polyester resin, polycarbonate resin, polyethersulfone resin, acrylic resin. And epoxy resin.
- a polyimide resin is more preferable.
- the acid dianhydride is not particularly limited, and examples thereof include an aromatic acid dianhydride, an alicyclic acid dianhydride, and an aliphatic acid dianhydride. These aromatic acid dianhydrides, alicyclic acid dianhydrides, or aliphatic acid dianhydrides can be used alone or in combination of two or more.
- the diamine is not particularly limited, and examples thereof include aromatic diamine, alicyclic diamine, and aliphatic diamine as described above. These aromatic diamines, alicyclic diamines, or aliphatic diamines can be used alone or in combination of two or more. Furthermore, you may use the terminal blocker mentioned above.
- the acid dianhydride used for the polyimide resin in the resin film 2 may include at least one of pyromellitic dianhydride and 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride.
- the diamine preferably contains at least one of 4,4′-diaminodiphenyl ether, p-phenylenediamine, and 3,3′-dimethylbenzidine.
- a polyimide resin is used for the substrate of the bottom emission type organic EL display, the color filter substrate, the touch panel substrate, etc.
- heat resistance and high transparency in the visible light region are required.
- at least one of the acid dianhydride and diamine used for the polyimide resin in the resin film 2 has an alicyclic structure or a fluorinated alkyl group.
- the polyimide resin of the resin film 2 has an alicyclic structure or a fluorinated alkyl group.
- the alicyclic structure and the fluorinated alkyl group may be used for both acid dianhydride and diamine, or may be used for one side.
- the diamine having an alicyclic structure is not particularly limited, and examples thereof include trans-1,4-diaminocyclohexane and 4,4′-dicyclohexylmethane.
- the acid dianhydride having an alicyclic structure is not particularly limited, but 1,2,3,4-cyclobutanetetracarboxylic dianhydride and 1R, 2S, 4S, 5R-cyclohexanetetracarboxylic dianhydride Etc.
- the diamine having a fluorinated alkyl group is not particularly limited, and examples thereof include 2,2'-bis (trifluoromethyl) benzidine.
- the acid dianhydride having a fluorinated alkyl group is not particularly limited, and examples thereof include 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride.
- polyimide resin films using these compounds from the viewpoint of transparency and low CTE properties, it is preferable that 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride is included as the acid dianhydride, As the diamine, it is preferable to include trans-1,4-diaminocyclohexane.
- the general manufacturing method of a polyimide precursor is demonstrated.
- the polyimide resin represented by the following general formula (11) is obtained by imide ring closure (imidization reaction) of a polyimide precursor resin represented by the following general formula (12).
- imide ring closure imidization reaction
- a polyimide precursor resin represented by the following general formula (12) It does not specifically limit as a method of imidation reaction, Thermal imidation and chemical imidation are mentioned. Among these, thermal imidization is preferable from the viewpoint of heat resistance of the polyimide resin film and transparency in the visible light region.
- R 5 represents a tetravalent organic group
- R 6 represents a divalent organic group
- X 1 and X 2 each independently represent a hydrogen atom, a monovalent organic group having 1 to 10 carbon atoms, or a monovalent alkylsilyl group having 1 to 10 carbon atoms.
- Polyimide precursors such as polyamic acid, polyamic acid ester, and polyamic acid silyl ester can be synthesized by a reaction between a diamine compound or a derivative thereof and an acid dianhydride or a derivative thereof.
- the acid dianhydride derivative include tetracarboxylic acid, acid chloride, and monocarboxylic, tetracarboxylic acid mono-, di-, tri-, and tetra-esters of the acid dianhydride.
- Examples include structures esterified with -propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group and the like.
- the reaction method of the polymerization reaction is not particularly limited as long as the target polyimide precursor can be produced, and a known reaction method can be used.
- a predetermined amount of all the diamine component and reaction solvent are charged into a reactor and dissolved, and then a predetermined amount of acid dianhydride component is charged and the mixture is charged at room temperature to 120 ° C. for 0.5 to 30 hours.
- Examples include a stirring method.
- reaction solvent examples include N-methyl-2-pyrrolidone, gamma butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylpropyleneurea, 1,3-dimethyl-2-imidazolidinone, Polar aprotic solvents such as dimethyl sulfoxide, ethers such as tetrahydrofuran, dioxane, propylene glycol monomethyl ether, ketones such as acetone, methyl ethyl ketone, diisobutyl ketone, diacetone alcohol, ethyl acetate, propylene glycol monomethyl ether acetate, ethyl lactate Esters such as, aromatic hydrocarbons such as toluene and xylene can be used alone or in combination of two or more.
- Polar aprotic solvents such as dimethyl sulfoxide, ethers such as tetrahydrofuran, dioxan
- the content of the solvent in the polyimide precursor resin composition is preferably 50 parts by weight or more, more preferably 100 parts by weight or more, preferably 2,000 parts by weight or less, based on 100 parts by weight of the polyimide precursor. Preferably it is 1,500 parts by weight or less. If it is in the range of 50 to 2,000 parts by weight, the viscosity is suitable for coating, and the film thickness after coating can be easily adjusted.
- the resin laminated film of the present invention can be produced by a production method including at least the following steps (1) to (3).
- (1) A step of forming a polyimide resin film A on a support substrate.
- (2) A step of further laminating a resin film on the resin film to form a resin laminated film.
- (3) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
- Step of forming polyimide resin film A on a support substrate A polyimide precursor resin solution is applied to the support substrate to form a polyimide precursor resin composition film of polyimide resin film A.
- the support substrate for example, silicon, ceramics, gallium arsenide, soda lime glass, non-alkali glass, or the like is used, but is not limited thereto.
- the coating method include a slit coating method, a spin coating method, a spray coating method, a roll coating method, and a bar coating method, and these methods may be used in combination. Among these, spin coating or slit coating is preferable.
- the polyimide precursor resin composition applied on the support substrate is dried to obtain a polyimide precursor resin composition film.
- a hot plate an oven, an infrared ray, a vacuum chamber or the like is used.
- the support substrate coated with the polyimide precursor resin composition is held and heated directly on the plate or on a jig such as a proxy pin installed on the plate.
- a material of the proxy pin there are a metal material such as aluminum or collless, or a synthetic resin such as polyimide resin or “Teflon” (registered trademark), and any proxy pin may be used.
- the height of the proxy pin varies depending on the size of the support substrate, the type of the resin composition, the purpose of heating, and the like.
- the resin composition applied on a glass support substrate of 300 mm ⁇ 350 mm ⁇ 0.7 mm is heated.
- the height of the proxy pin is preferably about 2 to 12 mm.
- the drying process time can be shortened and a uniform coating film can be formed.
- the heating temperature for drying varies depending on the type and purpose of the support substrate and the polyimide precursor, and it is preferably performed in the range of room temperature to 170 ° C. for 1 minute to several hours. Furthermore, you may perform a drying process in multiple times on the same conditions or different conditions.
- the polyimide precursor resin composition film is heated in the range of 170 ° C. or more and 650 ° C. or less to be converted into a polyimide resin film.
- the thermal imidization process may be performed after passing through some process after the drying process.
- the atmosphere of the thermal imidization step is not particularly limited, and may be air, an inert gas such as nitrogen or argon, or a vacuum.
- an inert gas such as nitrogen or argon
- a vacuum if firing is performed in an atmosphere having a high oxygen concentration, the mechanical properties deteriorate, such as the fired film becoming brittle due to oxidative degradation.
- oxygen concentration management in the ppm order is often difficult at the manufacturing site.
- the resin film of the present invention is preferably used if the oxygen concentration in the thermal imidization step is 5% or less because higher mechanical properties can be maintained.
- thermal imidization when colorless transparency is required, it is preferable to perform thermal imidization by heating in an atmosphere having an oxygen concentration of 5% or less. Generally, by reducing the oxygen concentration, it is possible to reduce the coloration of the polyimide film in the thermal imidization step and obtain a polyimide resin film exhibiting high transparency.
- a temperature raising method can be selected according to the heating method of the oven of the production line, but it is preferable to raise the temperature to the maximum heating temperature over 5 to 300 minutes.
- the polyimide precursor resin composition film formed on the base material may be imidized by raising the temperature from room temperature to the maximum heating temperature over 5 to 300 minutes to form a polyimide resin film.
- a polyimide precursor resin film formed on a base material is suddenly charged into an oven preliminarily heated in a range of 170 ° C. or higher and 650 ° C. or lower and imidized by heat treatment to form a polyimide resin film.
- the number of steps in the temperature raising process is not particularly limited, and the temperature may be raised in one step from the substrate charging temperature to the maximum heating temperature, or may be two or more steps.
- the firing temperature of the resin film used in at least one of the steps (1) or (2) is 400 ° C. or more from the viewpoint of improving the glass transition temperature of the resin laminated film.
- Step of peeling the resin laminated film by irradiating ultraviolet light from the supporting substrate side The ultraviolet ray is irradiated from the supporting substrate side to peel the resin laminated film from the supporting substrate. Since the resin film 1 exists on the support substrate, the resin laminated film exhibits good laser peelability regardless of the type of the resin film 2.
- the wavelength of ultraviolet light is not particularly limited, and examples thereof include 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm.
- the light source is not particularly limited as long as the resin laminated film is peeled off, such as a laser, a high-pressure mercury lamp, and an LED.
- the polyimide precursor resin solution and polyimide resin film used for the formation of the resin films 1 and 2 include surfactants, internal mold release agents, silane coupling agents, thermal crosslinking agents, inorganic particles, ultraviolet absorbers, light An acid generator or the like may be contained. Moreover, these may be contained in the resin films 1 and 2 in the range which does not impair the required physical property.
- Fluorosurfactants such as Florard (trade name, manufactured by Sumitomo 3M Co., Ltd.), Megafuck (trade name, manufactured by DIC Corporation), Sulflon (trade name, manufactured by Asahi Glass Co., Ltd.), etc. Is mentioned.
- KP341 trade name, manufactured by Shin-Etsu Chemical Co., Ltd.
- DBE trade name, manufactured by Chisso Corporation
- Granol trade name, manufactured by Kyoeisha Chemical Co., Ltd.
- BYK manufactured by Big Chemie Corporation
- polyoxyalkylene lauryl ether polyoxyethylene lauryl ether, polyoxyethylene oleyl ether and polyoxyethylene cetyl ether such as Emalmin (manufactured by Sanyo Chemical Industries), polyflow (trade name, manufactured by Kyoeisha Chemical Co., Ltd.) ) And other acrylic polymer surfactants.
- thermal crosslinking agent an epoxy compound or a compound having at least two alkoxymethyl groups or methylol groups is preferable. By having at least two of these groups, a crosslinked structure is formed by a condensation reaction with the resin and the same kind of molecules, and the mechanical strength and chemical resistance of the cured film after heat treatment can be improved.
- Preferred examples of the epoxy compound include, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, propylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, epoxy group-containing silicone such as polymethyl (glycidyloxypropyl) siloxane, and the like.
- the present invention is not limited to these at all.
- Epicron 850-S Epicron HP-4032, Epicron HP-7200, Epicron HP-820, Epicron HP-4700, Epicron EXA-4710, Epicron HP-4770, Epicron EXA-859CRP, Epicron EXA-1514 Epicron EXA-4880, Epicron EXA-4850-150, Epicron EXA-4850-1000, Epicron EXA-4816, Epicron EXA-4822 (trade name, manufactured by Dainippon Ink & Chemicals, Inc.), Recare Resin BEO-60E, Recare Resin BPO-20E, Rica Resin HBE-100, Portugal Resin DME-100 (above trade name, Shin Nippon Rika Co., Ltd.), EP-4003S, EP-4000S (above trade name, Adeka Co., Ltd.), PG-10 CG-500, EG-200 (above trade name, manufactured by Osaka Gas Chemical Co., Ltd.), NC-3000, NC-6000 (above trade name, manufactured by Nippon Meth
- Examples of the compound having at least two alkoxymethyl groups or methylol groups include DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, and DML.
- Examples of the internal release agent include long-chain fatty acids such as lauric acid, stearic acid, and myristic acid, long-chain alcohols such as stearyl alcohol and myristyl alcohol, polyoxyalkylene alkyl ethers, and fluoroalkylalkylene oxide adducts.
- long-chain fatty acids such as lauric acid, stearic acid, and myristic acid
- long-chain alcohols such as stearyl alcohol and myristyl alcohol
- polyoxyalkylene alkyl ethers such as polyoxyalkylene alkyl ethers, and fluoroalkylalkylene oxide adducts.
- silane coupling agent examples include 3-aminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, vinyltrimethoxysilane, and 3-mercaptopropyltrimethoxysilane. From the viewpoint of storage stability, it is preferable to contain 0.01 to 5 parts by weight with respect to 100 parts by weight of the polyimide precursor resin.
- inorganic particles examples include silica fine particles, alumina fine particles, titania fine particles, zirconia fine particles, and the like.
- the shape of the inorganic particles is not particularly limited, and examples thereof include a spherical shape, an elliptical shape, a flat shape, a rod shape, and a fiber shape.
- the particle size of the inorganic particles contained is not particularly specified, but it is preferable that the particle size is small in order to prevent light scattering.
- the average particle size is 0.5 to 100 nm, preferably in the range of 0.5 to 30 nm.
- the content of the inorganic particles is preferably 1 to 200% by weight with respect to the resin, and more preferably 10% by weight or more with respect to the lower limit.
- the upper limit is more preferably 150% by weight or less, further preferably 100% by weight or less, and particularly preferably 50% by weight or less. As the content increases, flexibility and folding resistance decrease.
- Organo inorganic filler sol is an organic solvent in which an inorganic filler is dispersed at a ratio of about 30% by weight.
- organic solvents include methanol, isopropanol, normal butanol, ethylene glycol, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl acetate, propylene.
- Examples include glycol monomethyl ether, N, N-dimethylacetamide, N, N-dimethylformamide, N-methyl-2-pyrrolidone, 1,3-dimethylimidazolidinone, and gamma butyrolactone.
- the surface of the organoinorganic filler sol is treated with a silane coupling agent, whereby the dispersibility of the inorganic filler in the resin is improved.
- inorganic particles may be contained from the viewpoint of reducing the CTE of the resin laminated film.
- the resin film 1 does not contain inorganic particles and the resin film 2 contains inorganic particles.
- the resin laminated film containing inorganic particles in the resin film 2 can be easily peeled off by laser peeling.
- UV absorbers examples include benzophenone UV absorbers, benzotriazole UV absorbers, triazine UV absorbers, benzoate UV absorbers, hindered amine light stabilizers, and the like.
- the resin film 1 contains an ultraviolet absorber. In this case, since the light absorption at the time of irradiating the resin film 1 with ultraviolet light is higher than when no ultraviolet absorber is included, the irradiation energy required for laser peeling can be reduced.
- photoacid generators examples include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts.
- a quinonediazide compound is preferably used from the standpoint that a positive photosensitive resin composition exhibiting an excellent dissolution inhibiting effect and having a high sensitivity and a low film thickness can be obtained.
- a positive photosensitive resin composition with high sensitivity can be obtained.
- the content of the photoacid generator is preferably 3 to 40 parts by weight with respect to 100 parts by weight of the polyimide precursor. By setting the content of the photoacid generator within this range, higher sensitivity can be achieved. Furthermore, you may contain a sensitizer etc. as needed.
- the developer used for removing the exposed portion is preferably an aqueous solution of an alkaline compound such as tetramethylammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, diethylaminoethanol.
- an alkaline compound such as tetramethylammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, diethylaminoethanol.
- amides such as N-methyl-2-pyrrolidone, alcohols such as propanol, esters such as ethyl lactate, ketones such as cyclohexanone, lactones such as gamma butyrolactone, etc. are used alone in these alkaline aqueous solutions. Or you may add what combined several types.
- the resin laminated film of the present invention includes a TFT substrate having a TFT on the resin film 2, an organic EL element substrate having an organic EL element on the resin film 2, and a color filter on the resin film 2. It can be used as a color filter substrate. These may have a support substrate on the resin film 1 side.
- the resin laminated film of the present invention is used for display elements such as liquid crystal displays, organic EL displays and electronic paper, optical elements such as color filters and optical waveguides, light receiving elements such as solar cells and CMOS, touch panels, circuit boards and the like. Can do.
- the polyimide resin laminate film of the present invention can be preferably used as a flexible substrate in utilizing these display elements, light receiving elements and the like as bendable flexible elements.
- an optical element color filter etc.
- the polyimide resin laminated film of this invention is used as a flexible substrate, like a flexible display element, a flexible optical element (flexible color filter etc.), etc.
- “flexible” is written before the name.
- a resin laminated film of the present invention is produced on a support substrate such as glass, a flexible TFT substrate having a TFT on the resin film 2, and a flexible organic EL element substrate having an organic EL element on the resin film 2 It can be used for a flexible color filter substrate provided with a color filter.
- the display element, the light receiving element, the circuit board, the TFT substrate, etc. may be manufactured after the resin laminated film of the present invention is formed on the supporting substrate and the resin laminated film is peeled off from the supporting substrate. You may implement without peeling a resin laminated film.
- the type of the resin film 2 is not particularly limited, but polyimide is preferable from the viewpoint of heat resistance and mechanical properties.
- the display element, the light receiving element, the TFT circuit, and the like may be formed on either the resin film 1 or the resin film 2 or on both resin films.
- the latter manufacturing method since a display element, a light receiving element, a TFT circuit and the like are manufactured and then peeled from the support substrate, there is an advantage that a conventional single wafer manufacturing process can be used.
- the resin laminated film is fixed to the support substrate, it is suitable for manufacturing a display element, a light receiving element, a circuit board, a TFT substrate, a touch panel and the like with high positional accuracy.
- the latter method is often described as a representative example, but any of the former methods may be used.
- an inorganic film can be formed on at least one surface to form a gas barrier layer, and can be suitably used as a substrate for a display element as a substrate with a gas barrier layer.
- the gas barrier layer on the resin film plays a role of preventing permeation of water vapor, oxygen and the like.
- the substrate including the resin laminated film of the present invention has a feature that it is flexible and can be bent greatly. Such a flexible substrate is called a flexible substrate.
- the flexible substrate can be manufactured through at least the following steps (1), (2), and (4).
- a flexible substrate having an inorganic film on a polyimide resin film can be produced through at least the following steps (1) to (4). (1) A step of forming a polyimide resin film A on a support substrate. (2) A step of further laminating a resin film on the resin film to form a resin laminated film. (3) A step of forming an inorganic film on the resin laminated film. (4) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
- the steps (1), (2), and (4) are the same as those described above as (1) to (3) in the method for manufacturing a resin laminated film.
- the step (3) in the manufacturing process of the flexible substrate is a step of forming an inorganic film on at least one surface of the resin laminated film.
- a flexible substrate can be manufactured by peeling the resin laminated film from the support substrate.
- an inorganic film may be formed immediately above the resin laminated film, or an inorganic film may be formed with another layer interposed therebetween.
- the inorganic film is formed directly on the resin laminated film.
- the place where the inorganic film is formed is not particularly limited.
- the inorganic film may be formed on the resin film 1 after the step (1), or may be formed on the resin film 2 after the step (2), or the resin film 1 may be peeled off after the step (4). It may be formed on the surface and formed on both the resin film 1 and the resin film 2.
- the support substrate used for manufacturing the flexible substrate is preferably a hard substrate having self-supporting properties, a smooth surface on which the resin composition is applied, and a heat-resistant base material.
- the material is not particularly limited.
- glass is preferred from the viewpoints of surface smoothness, laser peeling, and low cost.
- An alkali free glass is preferable from a viewpoint of metal impurity reduction.
- an inorganic film is preferably formed on the resin laminated film.
- metal oxide, metal nitride, and metal oxynitride can be preferably used.
- metal oxides such as calcium (Ca), metal nitrides, and metal oxynitrides.
- a gas barrier layer containing at least a metal oxide of Zn, Sn, or In, a metal nitride, and a metal oxynitride is preferable because of high bending resistance.
- a gas barrier layer having an atomic concentration of Zn, Sn, and In of 20 to 40% is preferable because it has higher bending resistance.
- a composition in which silicon dioxide and aluminum oxide coexist in the gas barrier layer is also preferable because of its good bending resistance.
- These inorganic gas barrier layers can be produced by vapor deposition such as sputtering, vacuum deposition, ion plating, plasma CVD, etc., in which a material is deposited in a vapor phase to form a film.
- the deposition rate can be improved by performing reactive sputtering in which a metal target is sputtered in an oxygen-containing atmosphere.
- the gas barrier layer may be formed on a laminate composed of a support substrate and a resin laminate film or on a free-standing film peeled from the support substrate.
- the film forming temperature of the gas barrier layer is preferably 80 to 400 ° C., and it is advantageous to select a high film forming temperature in order to improve the gas barrier performance. However, if the film forming temperature is high, the bending resistance may be lowered. Therefore, in applications where bending resistance is important, the film forming temperature of the gas barrier layer is preferably 100 to 300 ° C.
- the resin laminate film of the present invention when the resin film 2 is polyimide, the heat resistance of the resin laminate film is high, so that the gas barrier layer can be produced by raising the substrate temperature. Even when the gas barrier layer is formed at a high temperature (for example, 300 ° C.), defects such as wrinkles do not occur in the film.
- gas barrier layers there is no limitation on the number of gas barrier layers, and it may be a single layer or a multilayer of two or more layers.
- the multilayer film include a gas barrier layer in which the first layer is made of SiO, the second layer is made of SiN, and the gas barrier layer in which the first layer is made of SiO / AlO / ZnO and the second layer is made of SiO.
- Various organic solvents are used in the process of forming a layer having various functions such as an organic EL light emitting layer on the gas barrier layer of the flexible substrate to produce a display element or an optical element.
- a color filter hereinafter sometimes referred to as CF
- a gas barrier layer is formed on a resin laminated film, and a colored pixel, a black matrix, or the like is formed to form a CF.
- the uppermost gas barrier layer is preferably made of silicon oxide.
- composition analysis of the gas barrier layer can be performed by quantitatively analyzing each element using X-ray photoelectron spectroscopy (XPS method).
- the total thickness of the gas barrier layer is preferably 20 to 600 nm, and more preferably 30 to 300 nm.
- the thickness of the gas barrier layer can usually be measured by cross-sectional observation with a transmission electron microscope (TEM).
- TEM transmission electron microscope
- composition analysis in the thickness direction is performed, and then the elements in the thickness direction are analyzed. Then, the layer boundary and the layer thickness are determined based on the concentration distribution information.
- the composition analysis procedure in the thickness direction and the definition of the layer boundary and layer thickness of each layer are described below.
- composition analysis methods applied at this time include electron energy loss spectroscopy (hereinafter referred to as EELS analysis), energy dispersive X-ray spectroscopy (hereinafter referred to as EDX analysis), and secondary ion mass spectrometry (hereinafter referred to as SIMS analysis).
- EELS analysis electron energy loss spectroscopy
- EDX analysis energy dispersive X-ray spectroscopy
- SIMS analysis secondary ion mass spectrometry
- EELS analysis is most preferable from the viewpoint of sensitivity and accuracy. Therefore, the EELS analysis is first performed, and then the analysis is performed in the order given above (EELS analysis ⁇ EDX analysis ⁇ SIMS analysis ⁇ XPS analysis ⁇ AES analysis). To apply the data.
- CF is obtained by providing a black matrix and colored pixels on a flexible substrate using the resin laminate film of the present invention. Since CF uses a resin film as a base material, it is characterized by light weight, resistance to cracking, flexibility, and the like.
- the resin used for at least one of the black matrix and the colored pixel layer preferably contains a polyimide resin.
- the black matrix is composed of a low optical density layer and a high optical density layer formed on the low optical density layer, and at least of the low optical density layer and the high optical density layer. It is preferable that the resin used for one layer contains a polyimide resin.
- the resin film 2 when the resin film 2 is a polyimide, it has a high chemical resistance with respect to a general polar aprotic solvent as a solvent for the polyimide precursor. Can be used. Furthermore, even when a gas barrier layer is formed on the black matrix and the colored pixel layer, the polyimide resin of the black matrix and the colored pixel layer has high heat resistance. A gas barrier layer can be formed. Further, when patterning the black matrix and the colored pixel layer, a polyimide precursor soluble in an alkaline aqueous solution can be used, which is advantageous for forming a fine pattern.
- FIG. 1 shows a basic structure of a CF including a resin laminated film of the present invention formed on a support substrate. From here, the support substrate (symbol: 1) is peeled off by the above-described peeling method, thereby obtaining a CF having the resin laminated film of the present invention as the substrate.
- a resin laminated film (reference numeral: 2) made of a polyimide resin film A (reference numeral: 2A) and a resin film (reference numeral: 2B) is formed on a support substrate (reference numeral: 1), and a black matrix (reference numeral: 3) is formed thereon.
- Red colored pixels (symbol: 4R), green colored pixels (symbol: 4G), and blue colored pixels (symbol: 4B) are formed.
- an overcoat layer may be formed on the colored pixels.
- a gas barrier layer that is an inorganic film may be formed. The place where the gas barrier layer is formed is not particularly limited.
- the gas barrier layer may be formed on the resin laminated film (reference numeral: 2), or on the black matrix (reference numeral: 3) or the colored pixel layer. It may be formed on the overcoat layer existing on the surface of the color filter, or may be formed on both the resin laminated film (reference numeral: 2) and the overcoat layer.
- the multilayer film include a gas barrier layer in which the first layer is made of SiO, the second layer is made of SiN, and the gas barrier layer in which the first layer is made of SiO / AlO / ZnO and the second layer is made of SiO.
- the black matrix is preferably a black matrix made of a resin in which a black pigment is dispersed in a resin.
- the black pigment include carbon black, titanium black, titanium oxide, titanium oxynitride, titanium nitride, or iron tetroxide.
- carbon black and titanium black are suitable.
- a red pigment, a green pigment, and a blue pigment can be mixed and used as a black pigment.
- a black composition containing the black pigment as described above, preferably a resin, more preferably a solvent is used.
- the black composition may be non-photosensitive or photosensitive, and examples of the patterning method include machining, dry etching, sand blasting, photolithography, etc., and performing high-definition patterning.
- Photolithography that can be used is preferable.
- patterning can also be performed by using the black resin composition itself as a photosensitive material, and a photolithography method is performed by laminating a photoresist separately from the black resin composition.
- the composition can also be patterned to form a black matrix. In photolithography, an exposure process and a development process are performed and patterning is performed.
- the resin used for the resin black matrix is preferably a polyimide resin from the viewpoint of heat resistance and ease of forming a fine pattern.
- the polyimide resin is preferably a polyimide resin obtained by thermosetting a polyamic acid synthesized from an acid dianhydride and a diamine after patterning.
- the acid dianhydride, diamine and solvent those mentioned in the above-mentioned section “Resin film 1” can be used.
- a black matrix containing a polyimide resin In order to form a black matrix containing a polyimide resin, after applying a non-photosensitive black composition comprising at least a polyamic acid, a black pigment, and a solvent on a substrate, it is dried by air drying, heat drying, vacuum drying, etc. A non-photosensitive polyamic acid black film is formed, a positive photoresist is used to form a desired pattern, the photoresist is alkali stripped, and finally heated at 200 to 300 ° C. for 1 minute to 3 hours to form colored pixels Is generally cured (polyimidized).
- a photosensitive acrylic resin can also be used.
- an alkali-soluble acrylic resin in which a black pigment is dispersed, a photopolymerizable monomer, a polymerization initiator, and a black solvent are used.
- alkali-soluble acrylic resins include copolymers of unsaturated carboxylic acids and ethylenically unsaturated compounds.
- unsaturated carboxylic acids include acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetic acid or acid anhydrides.
- photopolymerizable monomers examples include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, triacryl formal, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate or dipentaerythritol. Examples include penta (meth) acrylate.
- photopolymerization initiators examples include benzophenone, N, N′-tetraethyl-4,4′-diaminobenzophenone, 4-methoxy-4′-dimethylaminobenzophenone, 2,2-diethoxyacetophenone, ⁇ -hydroxyisobutylphenone , Thioxanthone or 2-chlorothioxanthone.
- Examples of the solvent for dissolving the photosensitive acrylic resin include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl acetoacetate, methyl-3-methoxypropionate, ethyl-3-ethoxypropionate, Mention may be made of methoxybutyl acetate or 3-methyl-3-methoxybutyl acetate.
- the black matrix is a laminated resin black matrix composed of a low optical density layer and a high optical density layer formed on the low optical density layer in order to suppress a decrease in visibility due to external light reflection. It is preferable.
- the low optical density layer has a layer configuration in which the optical density is not 0 and is not substantially transparent, and the optical density value per unit thickness is the optical density per unit thickness of the high optical density layer. It is smaller than the concentration.
- the resin constituting the laminated resin black matrix is not particularly limited, but from the viewpoint of batch patterning of the low optical density layer and the high optical density layer, the low optical density layer may be a polyimide resin, and the high optical density layer may be an acrylic resin. preferable. Furthermore, in order to reduce the reflectance, it is more preferable that the resin black matrix contains fine particles.
- the colored pixels are formed.
- the colored pixels are composed of colored pixels of three colors, red, green, and blue.
- the brightness of the white display of the display device can be improved by forming a pixel of the fourth color that is colorless and transparent or very lightly colored.
- a resin containing a pigment or dye as a colorant can be used.
- pigments used for red colored pixels include PR254, PR149, PR166, PR177, PR209, PY138, PY150 or PYP139
- examples of pigments used for green colored pixels are PG7, PG36, PG58. , PG37, PB16, PY129, PY138, PY139, PY150 or PY185
- examples of pigments used for blue colored pixels include PB15: 6 or PV23.
- blue dyes include C.I. I. Basic blue (BB) 5, BB7, BB9 or BB26 may be mentioned, and examples of red dye include C.I. I. Acid Red (AR) 51, AR87 or AR289.
- red dyes include C.I. I. Acid green (AG) 25 and AG27.
- resins used for red, green, and blue colored pixels include acrylic resins, epoxy resins, and polyimide resins.
- a polyimide resin is preferable from the viewpoint of heat resistance, and a photosensitive acrylic resin may be used in order to reduce the production cost of CF.
- a non-photosensitive color paste made of at least a polyamic acid, a colorant, and a solvent is applied on a substrate, and then dried by air drying, heat drying, vacuum drying, etc.
- the photoresist is alkali stripped and finally heated at 200 to 300 ° C. for 1 minute to 3 hours to form a colored pixel.
- a method of curing (polyimidization) is common.
- the photosensitive acrylic resin generally contains an alkali-soluble acrylic resin, a photopolymerizable monomer, and a photopolymerization initiator.
- alkali-soluble acrylic resins include copolymers of unsaturated carboxylic acids and ethylenically unsaturated compounds.
- unsaturated carboxylic acids include acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetic acid or acid anhydrides.
- photopolymerizable monomers examples include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, triacryl formal, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate or dipentaerythritol. Examples include penta (meth) acrylate.
- photopolymerization initiators examples include benzophenone, N, N′-tetraethyl-4,4′-diaminobenzophenone, 4-methoxy-4′-dimethylaminobenzophenone, 2,2-diethoxyacetophenone, ⁇ -hydroxyisobutylphenone , Thioxanthone or 2-chlorothioxanthone.
- Examples of the solvent for dissolving the photosensitive acrylic resin include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl acetoacetate, methyl-3-methoxypropionate, ethyl-3-ethoxypropionate, Mention may be made of methoxybutyl acetate or 3-methyl-3-methoxybutyl acetate.
- an overcoat layer may be further formed on the CF surface.
- the resin used for forming the overcoat layer include an epoxy resin, an acrylic-modified epoxy resin, an acrylic resin, a siloxane resin, or a polyimide resin.
- the thickness of the overcoat layer is preferably a thickness that makes the surface flat, more preferably 0.5 to 5.0 ⁇ m, and even more preferably 1.0 to 3.0 ⁇ m.
- the CF including the resin laminated film of the present invention can be manufactured through at least the following steps. (1) A step of forming a polyimide resin film A on a support substrate. (2) A step of further laminating a resin film on the resin film to form a resin laminated film. (3) A step of forming a black matrix on the resin laminated film. (4) A step of forming colored pixels on the resin laminated film. (5) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
- the steps (3) and (4) in the CF manufacturing process are steps for forming a black matrix and colored pixels on the resin laminated film.
- photolithography is used for the pattern formation of the black matrix and the colored pixels.
- high definition of 300 ppi or more is required for a liquid crystal display or an organic EL display, and a performance equal to or higher than that of a flexible display panel is also required.
- the current technology for producing CF using a glass substrate as a support substrate can be applied.
- a high-definition pattern can be formed as compared with the case of producing CF on the top.
- a black matrix or colored pixels may be formed immediately above the resin laminated film, or these layers are formed with another layer interposed therebetween. May be.
- the CF manufacturing process may further include a process of forming an inorganic film such as a gas barrier layer.
- the place where the inorganic film is formed is not particularly limited. For example, it may be formed on a resin laminate film, on a black matrix or a colored pixel layer, or on an overcoat layer existing on the surface of a color filter, or on a resin laminate film and an overcoat layer. It may be formed on both of the above.
- limiting in the number of layers of an inorganic film One layer may be sufficient and the multilayer of two or more layers may be sufficient.
- the multilayer film include an inorganic film in which the first layer is made of SiO, the second layer is made of SiN, and the first layer is made of SiO / AlO / ZnO, and the second layer is made of SiO.
- the resin laminated film and gas barrier layer of the present invention are produced on the support substrate by the above method.
- a paste for a black matrix made of polyamic acid in which a black pigment made of carbon black or titanium black is dispersed is applied by a method such as a spin coater or a die coater so that the thickness after curing becomes 1 ⁇ m, and 60 Pa or less
- semi-cure is performed in a hot air oven or hot plate at 110 to 140 ° C.
- a positive resist by spin coater or die coater so that the thickness after pre-baking is 1.2 ⁇ m, then dry under reduced pressure to 80 Pa, and pre-bake in a hot air oven or hot plate at 80 to 110 ° C. And a resist film is formed. Then, after selective exposure with ultraviolet rays through a photomask by a proximity exposure machine or a projection exposure machine, alkali development such as 1.5 to 3% by weight of potassium hydroxide or tetramethylammonium hydroxide is performed. The exposed portion is removed by immersing in the solution for 20 to 300 seconds. After stripping the positive resist using a stripping solution, the polyamic acid is converted to polyimide by heating in a hot air oven or hot plate at 200 to 300 ° C. for 10 to 60 minutes to form a resin black matrix.
- Colored pixels are produced using a colorant and a resin.
- a pigment is used as the colorant, it is prepared by adding polyamic acid to a dispersion obtained by mixing a pigment with a polymer dispersant and a solvent and performing a dispersion treatment.
- a dye is used as the colorant, it is prepared by adding a solvent and a polyamic acid to the dye.
- the total solid content in this case is the total of the polymer dispersant, polyamic acid, which is a resin component, and the colorant.
- the obtained colorant composition is formed on a resin laminated film on which a resin black matrix is formed, with a target thickness of 0.8 to 3.0 ⁇ m after heat treatment by a method such as a spin coater or a die coater. After coating, the film is dried under reduced pressure, and prebaked in a hot air oven or hot plate at 80 to 110 ° C. to form a colorant coating film.
- a positive resist is applied by a method such as a spin coater or a die coater so that the thickness after pre-baking becomes 1.2 ⁇ m, followed by drying under reduced pressure, and pre-baking in a hot air oven or hot plate at 80 to 110 ° C.
- a method such as a spin coater or a die coater so that the thickness after pre-baking becomes 1.2 ⁇ m, followed by drying under reduced pressure, and pre-baking in a hot air oven or hot plate at 80 to 110 ° C.
- alkali development such as 1.5 to 3% by weight of potassium hydroxide or tetramethylammonium hydroxide is performed.
- the exposed portion is removed by immersing in the solution for 20 to 300 seconds.
- the polyamic acid is converted to polyimide by heating in a hot air oven or hot plate at 200 to 300 ° C. for 10 to 60 minutes to form colored pixels.
- the patterning process as described above is sequentially performed on the red color pixel, the green color pixel, and the blue color pixel.
- the order of patterning the colored pixels is not particularly limited.
- the polysiloxane resin is applied by a method such as a spin coater or a die coater, vacuum dried, pre-baked in a hot air oven or hot plate at 80 to 110 ° C., and 5 to 5 in a hot air oven or hot plate at 150 to 250 ° C.
- a method such as a spin coater or a die coater, vacuum dried, pre-baked in a hot air oven or hot plate at 80 to 110 ° C., and 5 to 5 in a hot air oven or hot plate at 150 to 250 ° C.
- the resin laminated film of the present invention has a large light absorption in the ultraviolet light region of the resin film 1, it is possible to reduce the irradiation energy necessary for peeling.
- CTE of the resin laminated film of this invention is low, for example, 30 ppm / degrees C or less, the curvature of the board
- the resin laminated film of the present invention can be suitably used for a substrate of a TFT substrate. That is, a TFT substrate having TFTs on the resin laminate film of the present invention can be obtained. Since this TFT substrate uses a resin film as a base material, it is characterized by light weight and resistance to cracking.
- FIG. 2 shows a basic structure of a TFT including a resin laminated film of the present invention formed on a support substrate.
- the support substrate reference numeral: 1
- the support substrate reference numeral: 1
- a resin laminated film composed of a polyimide resin film A (symbol: 2A ′) and a resin film (symbol: 2B ′) is formed on a support substrate (symbol: 1), and an inorganic film is formed thereon.
- a gas barrier layer (symbol: 5) is further formed, and a TFT (symbol: 6) and a planarization layer (symbol: 7) are formed thereon.
- a TFT substrate using the resin laminated film of the present invention can be manufactured through at least the following steps. (1) A step of forming a polyimide resin film A on a support substrate. (2) A step of further laminating a resin film on the resin film to form a resin laminated film. (3) A step of forming a gas barrier layer on the resin laminated film (4) A step of forming a TFT on the resin laminated film. (5) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
- the steps (3) and (4) in the manufacturing process of the TFT substrate are steps of forming a gas barrier layer on the resin laminated film and then forming a TFT.
- the steps (3) and (4) may be to form a gas barrier layer or TFT directly on the resin laminated film, or to form these with another layer interposed therebetween. Also good.
- a gas barrier layer is formed directly on the resin laminated film, and a TFT is formed thereon.
- Semiconductor layers for forming TFTs include amorphous silicon semiconductors, polycrystalline silicon semiconductors, oxide semiconductors typified by In-Ga-ZnO - 4 , organic semiconductors typified by pentacene and polythiophene, and carbon nanotubes. Examples thereof include carbon materials.
- a gas barrier layer, a gate electrode, a gate insulating film, a semiconductor layer, an etching stopper film, and a source / drain electrode are sequentially formed by a known method using the resin laminated film of the present invention as a base material to produce a bottom gate TFT. .
- a TFT substrate using the resin laminated film of the present invention can be produced.
- Such a TFT substrate can be used as a drive substrate for a display element such as a liquid crystal element, an organic EL element, or electronic paper.
- the manufacturing temperature of the TFT depends on the type of the semiconductor layer, but in the case of a polycrystalline silicon semiconductor or an oxide semiconductor, it is advantageous to select a high manufacturing temperature in order to improve mobility and reliability. In general, heat treatment is required at 500 ° C. or higher for a polycrystalline silicon semiconductor and 300 ° C. or higher for an oxide semiconductor. In the resin laminated film of the present invention, when the resin film 2 is polyimide, the heat resistance of the resin laminated film is high, so that the TFT can be manufactured at a high temperature.
- the acid dianhydride residue in the polyimide contained in the polyimide resin film A of the resin film 1 is an aromatic acid dianhydride residue
- the heat resistance of the resin film 1 is increased and the semiconductor manufacturing process at the above high temperature is performed. Since the outgas when passing through can be reduced, a high-quality TFT substrate with few chippings can be obtained.
- the aromatic acid dianhydride residue is preferably a group derived from pyromellitic dianhydride or 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, since the heat resistance is further improved. .
- the resin laminated film of the present invention has high light absorption in the ultraviolet region of the resin film 1, it is possible to reduce the irradiation energy necessary for peeling.
- photolithography is mainly used to form a gate electrode, a gate insulating film, a semiconductor layer, an etching stopper film, and a source / drain electrode.
- the CTE of the resin laminate film of the present invention is low, for example, 30 ppm / ° C. or less, preferably 10 ppm / ° C. or less, the warpage of the substrate when the resin laminate film is formed on the support substrate as described above is reduced. it can.
- the TFT can be manufactured with high accuracy.
- a TFT substrate with good driving performance can be obtained.
- the curling of the TFT substrate after peeling can be reduced, damage to the TFT element after peeling can be prevented.
- the flexible substrate using the resin laminate film of the present invention can be used for a touch panel substrate.
- a transparent conductive layer can be formed on at least one surface of the resin laminate film of the present invention to form a transparent conductive film
- a touch panel can be created by laminating transparent conductive films using an adhesive, an adhesive, or the like.
- a carbon material such as a carbon nanotube or graphene such as a known metal film or metal oxide film
- a metal oxide film is applied from the viewpoint of transparency, conductivity, and mechanical properties. It is preferable.
- the metal oxide film include indium oxide, cadmium oxide and tin oxide to which tin, tellurium, cadmium, molybdenum, tungsten, fluorine, zinc, germanium and the like are added as impurities, zinc oxide to which aluminum is added as an impurity, and oxide.
- metal oxide films such as titanium.
- an indium oxide thin film containing 2 to 15% by mass of tin oxide or zinc oxide is preferably used because of its excellent transparency and conductivity.
- the transparent conductive layer may be formed by any method as long as the target thin film can be formed. For example, from the gas phase such as sputtering, vacuum deposition, ion plating, and plasma CVD. A vapor deposition method or the like in which a material is deposited to form a film is suitable. Especially, it is preferable to form into a film using sputtering method from a viewpoint that the outstanding electroconductivity and transparency are acquired.
- the film thickness of the transparent conductive layer is preferably 20 to 500 nm, and more preferably 50 to 300 nm.
- the patterning method of the transparent conductive layer is not particularly limited, and examples thereof include wet etching of a photoresist and an etchant solution, and dry etching using a laser.
- the flexible substrate using the resin laminated film of the present invention can be used for a display element such as a liquid crystal display, an organic EL display, and electronic paper, or a light receiving element such as a solar cell or a CMOS.
- a display element such as a liquid crystal display, an organic EL display, and electronic paper
- a light receiving element such as a solar cell or a CMOS.
- the flexible substrate of the present invention is preferably used.
- a circuit and a functional layer necessary for the display element and the light receiving element are formed on the resin laminated film formed on the substrate, and further irradiated with ultraviolet light, For example, the laminated film is peeled off from the substrate.
- an organic EL element which is an example of a display element
- an organic EL element top emission method, red green blue light emitting organic EL
- a resin laminated film (symbol: 2 ′) composed of a polyimide resin film A (symbol: 2A ′) and a resin film (symbol: 2B ′) is formed on a support substrate (symbol: 1), and an inorganic film is formed thereon.
- a gas barrier layer (symbol: 5) is further formed, and a TFT (symbol: 6) circuit, an organic EL light emitting layer (symbols: 11R, 11G, 11B) and the like are formed thereon.
- the TFT (symbol: 6) circuit, the organic EL light emitting layer (symbol: 11R, 11G, 11B), etc. are TFTs (symbol: 6) made of amorphous, silicon, low-temperature polysilicon, oxide semiconductor, etc., and a planarizing layer.
- first electrode (symbol: 8) made of Al / ITO, insulating layer (symbol: 9) covering the end of the first electrode (symbol: 8), hole injection layer, hole Consists of a transport layer, a light emitting layer, an electron transport layer, a red green blue organic EL light emitting layer (symbol: 11R, 11G, 11B) composed of an electron injection layer, and a second electrode (symbol: 10) composed of ITO, etc. Sealed with a film (reference numeral: 12). It can be used as an organic EL element by irradiating ultraviolet light and peeling the resin laminated film (symbol: 2 ') from the support substrate (symbol: 1).
- the organic EL element including the resin laminated film of the present invention can be produced through at least the following steps. (1) A step of forming a polyimide resin film A on a support substrate. (2) A step of further laminating a resin film on the resin film to form a resin laminated film. (3) The process of forming an organic EL element on the said resin laminated film. (4) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
- the step (3) in the manufacturing process of the organic EL element includes a TFT (reference numeral: 6) made of amorphous, silicon, low-temperature polysilicon, an oxide semiconductor, etc., a flattening layer (reference numeral: 7), Al / ITO, etc.
- a first electrode (symbol: 8), an insulating layer (symbol: 9) covering the end of the first electrode (symbol: 8), a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer,
- the organic EL light emitting layer (symbol: 11W, 11R, 11G, 11B) of white or each color (red, green, blue, etc.) made of an electron injection layer, and the second electrode (symbol: 10) made of ITO, etc. are formed sequentially. .
- a gas barrier layer which is an inorganic film
- the resin laminate film (symbol: 2 ′)
- a sealing film (reference numeral: 12).
- the light extraction method may be either a bottom emission method in which light is extracted to the TFT substrate side or a top emission method in which light is extracted to the sealing film side.
- the organic EL element including the resin laminate film of the present invention and / or the CF including the resin laminate film of the present invention can be preferably used as an organic EL display including them.
- a full-color organic EL display can be obtained by combining a white light-emitting organic EL element using the resin laminate film of the present invention as a substrate and a CF containing the resin laminate film of the present invention.
- a red, green, and blue light emitting organic EL element using the resin laminated film of the present invention as a base material and a CF including the resin laminated film of the present invention may be combined.
- FIG. 4 shows an example of an organic EL display obtained by bonding the CF of the present invention and a white light emitting organic EL element.
- the following method is mentioned as an example of the manufacturing process.
- the CF 20 of the present invention is formed on a first support substrate (not shown) by the above-described manufacturing method.
- an organic EL element 30 having a resin laminated film as a substrate is formed on a second support substrate (not shown) by the above-described method.
- CF symbol: 20
- organic EL element symbol: 30
- the first and second support substrates are respectively peeled by irradiating the first and second support substrates with ultraviolet light from the support substrate side.
- the adhesive layer is not particularly limited, and examples thereof include a pressure-sensitive adhesive, an adhesive, and an adhesive cured by light or heat.
- the resin for the adhesive layer is not particularly limited, and examples thereof include acrylic resin, epoxy resin, urethane resin, polyamide resin, polyimide resin, and silicone resin.
- the pre-baked coating film was heated to 300 ° C. or 400 ° C. at 3.5 ° C./min using an inert oven (INH-21CD manufactured by Koyo Thermo System Co., Ltd.) under a nitrogen stream (oxygen concentration 20 ppm or less). For 30 minutes, and cooled to 50 ° C. at 5 ° C./min to produce a polyimide resin film.
- the thickness of the obtained polyimide resin film was 10.0 ⁇ m.
- Light transmittance at 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm of the resin film 1 when a film having a thickness of 100 nm is obtained using a micro ultraviolet visible near infrared spectrophotometer (MSV-5100 manufactured by JASCO Corporation) was measured. The same etching and light transmittance measurement were performed at five locations, and the average value thereof was defined as the light transmittance.
- B irradiation energy exceeds 230mJ / cm 2, 250mJ / cm 2 or less.
- C Irradiation energy exceeds 250 mJ / cm 2 and is 270 mJ / cm 2 or less.
- D Irradiation energy exceeds 270 mJ / cm 2 and is 290 mJ / cm 2 or less.
- E Irradiation energy exceeds 290 mJ / cm 2 .
- CTE coefficient of linear thermal expansion
- Tg glass transition temperature
- thermogravimetric apparatus TGA-50 manufactured by Shimadzu Corporation.
- the temperature raising method was performed under the following conditions. In the first stage, the temperature of the sample was raised to 350 ° C. at a temperature rise rate of 3.5 ° C./min to remove the adsorbed water of the sample, and in the second stage, the temperature drop rate was 10 ° C./min to room temperature. In the third stage, the main measurement was performed at a temperature rising rate of 10 ° C./min to obtain a 1% thermogravimetric decrease temperature.
- polyimide resin laminated films Examples 1 to 29 obtained by laser peeling the polyimide resin laminated film on the glass substrate prepared in (1) by the method described in (6) were used.
- ITO film Sputtering is performed on the release surface of the polyimide resin laminated film peeled from the glass substrate by the method described in (6) using a composite oxide target of indium oxide and tin oxide. Then, an ITO layer having a thickness of 150 nm was formed. Sputtering was performed using a DC power source of 3 kW at a pressure of 6.7 ⁇ 10 ⁇ 1 Pa and a substrate temperature of 150 ° C.
- Warpage measurement of glass substrate after resin laminated film formation Warpage measurement is performed on a glass substrate (AN-100 manufactured by Asahi Glass Co., Ltd.) having a thickness of 300 ⁇ 350 ⁇ 0.7 mm, according to the method described in (1)
- a polyimide resin laminated film was prepared by placing it on a precision stone regular board (1000 mm x 1000 mm) manufactured by Mitutoyo Co., Ltd. and floated from the regular board for a total of eight points on each side of the four sides of the test plate and each vertex. The quantity (distance) was measured using a gap gauge. These average values were taken as the amount of warpage. The measurement was performed at room temperature (25 ° C.).
- the TFT substrate and color filter substrate peeled from the glass substrate by the method described in (6) were stored at room temperature for 30 minutes.
- the TFT substrate and color filter substrate after stationary storage were cut into 30 mm squares, and were further allowed to stand at room temperature for 30 minutes on a smooth glass plate so that the substrate side was down. Thereafter, observation was performed, and the maximum amount of the portion where the 30 mm square TFT substrate or the color filter substrate floated from the glass plate was measured as the curl amount, and evaluation was performed according to the following criteria.
- PMDA pyromellitic dianhydride BPDA: 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride ODPA: 3,3 ′, 4,4′-oxydiphthalic dianhydride 6FDA: 4,4 ′ -(Hexafluoroisopropylidene) diphthalic anhydride BSAA: 2,2-bis (4- (3,4-dicarboxyphenoxy) phenyl) propane dianhydride CBDA: cyclobutanetetracarboxylic dianhydride PMDA-HS: 1R , 2S, 4S, 5R-cyclohexanetetracarboxylic dianhydride BPDA-H: 3,3 ′, 4,4′-dicyclohexanetetracarboxylic dianhydride PDA: paraphenylenediamine 3,3′-DDS : 3,3'-
- Synthesis Example 1 Synthesis of Polyimide Precursor Solution PMDA 5.0505 g (21.2 mmol), HFHA 13.9971 g (23.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask under a dry nitrogen stream and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 2 Synthesis of polyimide precursor solution BPDA 6.2357 g (21.2 mmol), HFHA 12.8119 g (21.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask under a dry nitrogen stream and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 3 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, 6.4PA g (20.8 mmol) of ODPA, 12.5879 g (20.8 mmol) of HFHA, and 100 g of NMP were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 4 Synthesis of polyimide precursor solution Under a dry nitrogen stream, 6FDA 8.0855 g (18.2 mmol), HFHA 10.7992 g (18.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 5 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPSA 8.8126 g (16.9 mmol), HFHA 10.2350 g (16.9 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 8 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA-H6.4058 g (20.9 mmol), HFHA 12.6418 g (20.9 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 10 Synthesis of Polyimide Precursor Solution PMDA-HS 6.0422 g (27.0 mmol), BABODS 13.0054 g (27.0 mmol), and NMP 100 g were placed in a 200 mL four-necked flask in a dry nitrogen stream and heated at 65 ° C. with stirring. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 11 Synthesis of polyimide precursor solution PMDA-HS 5.2923 g (23.6 mmol), BABOHA 13.7554 g (23.6 mmol) and NMP 100 g were placed in a 200 mL four-necked flask under a dry nitrogen stream and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 12 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA 7.8737 g (26.7 mmol), BABOBA 11.1840 g (26.7 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 14 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, ODPA 7.9558 g (25.6 mmol), BAPS 11.0918 g (25.6 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 15 Synthesis of polyimide precursor solution In a 200 mL four-necked flask under a dry nitrogen stream, BPDA 4.7698 g (16.2 mmol), PMDA-HS 1.2114 g (5.4 mmol), HFHA 13.0665 g (21.6 mmol), NMP 100 g And heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 16 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, in a 200 mL four-necked flask, BPDA 3.2443 g (11.0 mmol), PMDA-HS 2.4719 g (11.0 mmol), HFHA 13.3314 g (22.0 mmol), NMP 100 g And heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 17 Synthesis of polyimide precursor solution Under a dry nitrogen stream, BPDA 1.6557 g (5.6 mmol), PMDA-HS 3.77846 g (16.8 mmol), HFHA 13.6073 g (22.5 mmol), NMP 100 g in a 200 mL four-necked flask And heated and stirred at 65 ° C. After 6 hours, it was cooled to a polyamic acid solution.
- Synthesis Example 18 Synthesis of Polyamic Acid Solution Under a dry nitrogen stream, PMDA-HS 9.0374 g (40.3 mmol), 3,3′-DDS 10.0102 g (40.3 mmol), and NMP 100 g were placed in a 200 mL four-necked flask at 65 ° C. And stirred with heating. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 19 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA-H14.0776 g (46.0 mmol), PDA 4.9700 g (46.0 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 20 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA 13.7220 g (46.6 mmol), CHDA 5.3256 g (46.6 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis Example 21 Synthesis of polyimide precursor solution Under a dry nitrogen stream, ODPA 9.3724 g (30.2 mmol), TFMB 9.6752 g (30.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Synthesis example 22 Synthesis
- Synthesis Example 23 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA 7.3799 g (25.1 mmol), BABB 11.4074 g (25.1 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
- Preparation Example 1 Preparation of Polyimide Precursor / Silica Nanoparticle Solution
- the polyimide precursor solution was prepared so that the silica fine particles would be 100 parts by weight with respect to 100 parts by weight of the polyimide precursor in the polyimide precursor solution obtained in Synthesis Example 2.
- Organosilica sol manufactured by Nissan Chemical Industries, Ltd., trade name: PMA-ST, particle size: 10-30 nm was added to obtain a polyimide precursor-silica nanoparticle varnish.
- Preparation Example 2 Preparation of polyimide precursor / silica nanoparticle solution
- the polyimide precursor solution was prepared so that the silica fine particles would be 50 parts by weight with respect to 100 parts by weight of the polyimide precursor in the polyimide precursor solution obtained in Synthesis Example 22.
- Organosilica sol manufactured by Nissan Chemical Industries, Ltd., trade name: PMA-ST, particle size: 10-30 nm
- a polyimide resin film was prepared by the method described in (2), and the laser peelability was evaluated by the method described in (6).
- the results are shown in Table 1 together with the maximum absorbance of the diamine solution in the wavelength region of 300 to 400 nm, the absorbance at wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm, and the CTE of the polyimide resin film.
- Example 1 Using the polyimide precursor solutions of Synthesis Example 1 and Synthesis Example 20 by the method described in (1), a resin film 1 having a thickness of 1 ⁇ m (fired at 300 ° C.) and a resin film 2 having a thickness of 10 ⁇ m (fired at 300 ° C.) was made.
- the method described in (3), (6) to (10) and (12) measurement of the light transmittance of the resin laminated film, laser peeling test, CTE measurement, Measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, measurement of 1% weight loss temperature, measurement of water vapor transmission rate after forming ITO film on peeled surface Went.
- Examples 2 to 11 A polyimide resin laminated film was produced in the same manner as in Example 1 except that the polyimide precursor solution used for producing the resin film 1 was changed as shown in Tables 2 to 3.
- Example 1 measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight
- Example 2 measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight
- the water vapor transmission rate was measured. The results are shown in Tables 2-3.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Example 12 A polyimide resin laminate film was produced in the same manner as in Example 1 except that the polyimide resin precursor solution of Synthesis Example 12 was used for production of the resin film 1 and the firing temperature was changed to 400 ° C.
- Example 1 measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight After measuring the decrease temperature and forming an ITO film on the peeled surface, the water vapor transmission rate was measured. The results are shown in Table 3.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Examples 13-17 A polyimide resin laminated film was produced in the same manner as in Example 1 except that the polyimide precursor solution used for production of the resin film 1 was changed as described in Table 3.
- Example 1 measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight After measuring the decrease temperature and forming an ITO film on the peeled surface, the water vapor transmission rate was measured. The results are shown in Table 3.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Example 18-22 The polyimide precursor solution of Synthesis Example 7 was used instead of the polyimide precursor solution of Synthesis Example 1, and the polyimide film was changed in the same manner as in Example 1 except that the film thickness of the resin film 1 was changed as shown in Table 4.
- a resin laminated film was produced.
- measurement of light transmittance, laser peeling test, measurement of CTE, measurement of change in CTE by lamination, measurement of Tg, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight After measuring the decrease temperature and forming an ITO film on the peeled surface, the water vapor transmission rate was measured. The results are shown in Table 4.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Examples 23-25 Other than using the polyimide precursor solution described in Table 4 for the production of the resin film 1 and using the polyimide precursor solution described in Table 4 for the production of the resin film 2 and setting the firing temperature to 400 ° C.
- a polyimide resin laminated film was produced.
- measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight After measuring the decrease temperature and forming an ITO film on the peeled surface, the water vapor transmission rate was measured. The results are shown in Table 4.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Example 26-27 The polyimide precursor solution shown in Table 4 was used for the production of the resin film 1 and its firing temperature was changed to 400 ° C., and the polyimide precursor solution of Synthesis Example 22 was used for the production of the resin film 2 and its firing.
- a polyimide resin laminated film was produced in the same manner as in Example 1 except that the temperature was 400 ° C.
- measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight After measuring the decrease temperature and forming an ITO film on the peeled surface, the water vapor transmission rate was measured. The results are shown in Table 4.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Examples 28-29 A polyimide resin laminated film was produced in the same manner as in Example 23 except that the polyimide precursor solution shown in Table 4 was used for production of the resin film 2.
- Example 1 measurement of light transmittance, laser peeling test, measurement of CTE, measurement of Tg, measurement of CTE change due to lamination, measurement of chromaticity coordinates, measurement of Rz of peeled surface, 1% weight After measuring the decrease temperature and forming an ITO film on the peeled surface, the water vapor transmission rate was measured. The results are shown in Table 4.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Comparative Examples 1 and 2 A polyimide resin laminated film was produced in the same manner as in Example 1 except that the polyimide precursor solution used for production of the resin film 1 was changed as described in Table 5. In the same manner as in Example 1, measurement of light transmittance, laser peeling test, and measurement of chromaticity coordinates were performed. The results are shown in Table 5. Even with the maximum irradiation energy (400 mJ / cm 2 ) of the apparatus used for the laser peeling test, the resin laminated film could not be peeled off. Therefore, measurement of CTE, measurement of change of CTE due to lamination, measurement of Rz of peeled surface, measurement of 1% weight loss temperature, film formation of ITO film, and measurement of water vapor transmission rate were not performed.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Comparative Example 3 A polyimide resin laminated film was produced in the same manner as in Example 24 except that the polyimide precursor solution used for the production of the resin film 1 was changed as described in Table 5. In the same manner as in Example 1, measurement of light transmittance, laser peeling test, and measurement of chromaticity coordinates were performed. The results are shown in Table 5. Even with the maximum irradiation energy (400 mJ / cm 2 ) of the apparatus used for the laser peeling test, the resin laminated film could not be peeled off. Therefore, measurement of CTE, measurement of change of CTE due to lamination, measurement of Rz of peeled surface, measurement of 1% weight loss temperature, film formation of ITO film, and measurement of water vapor transmission rate were not performed.
- Table 6 shows the minimum value of the light transmittance in the wavelength region of 300 to 400 nm and the light transmittance at the wavelengths of 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm when the resin film 1 is a film having a thickness of 100 nm. .
- Preparation Example 3 Synthesis of polyamic acid solution DAE (0.30 mol), PDA (0.65 mol) and SiDA (0.05 mol) were charged together with 850 g of GBL and 850 g of NMP, and ODPA (0.9975 mol) was added. And reacted at 80 ° C. for 3 hours. Maleic anhydride (0.02 mol) was added and further reacted at 80 ° C. for 1 hour to obtain a polyamic acid solution (resin concentration 20% by weight).
- Preparation Example 4 Preparation of black resin composition for forming black matrix 50 g of carbon black (manufactured by Mitsubishi Chemical Corporation) and 200 g of NMP were mixed with 250 g of the polyamic acid solution of Preparation Example 3, and Dino mill KDL. Using -A, a zirconia bead having a diameter of 0.3 mm was used for dispersion treatment at 3200 rpm for 3 hours to obtain a black resin dispersion.
- Example 30 Production of color filter (FIG. 1)
- Preparation of Polyimide Resin Laminate Film A 300 mm ⁇ 350 mm ⁇ 0.7 mm thick glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) is used as the support substrate (symbol: 1), and the firing temperature of the polyimide resin film A is 300 ° C.
- a resin laminated film code: 2
- code: 2B a resin laminated film
- the film thickness at the black matrix opening after the heat treatment is 2.0 ⁇ m.
- the rotational speed of the spinner was adjusted so that the photosensitive red resist prepared in Preparation Example 5 was applied and prebaked at 100 ° C. for 10 minutes on a hot plate to obtain a red colored layer.
- a UV exposure machine “PLA-5011” manufactured by Canon Inc. a black matrix opening and a partial area on the black matrix are passed through a chrome photomask through which light is transmitted in an island shape. / Cm 2 (ultraviolet intensity of 365 nm).
- Examples 31 to 33, Comparative Example 4 A color filter was produced in the same manner as in Example 30, except that the polyimide resin laminate film was produced under the same conditions as in Example 18, except that the conditions were the same as those in Examples shown in Table 6.
- Examples 30 to 33 there were no particular problems such as repelling or color mixing, and a good color filter could be obtained.
- the color filters of Examples 31 to 33 were more curled and the number of missing pixels increased. This is considered due to an increase in CTE of the polyimide resin laminated film.
- the color filter could not be peeled from the glass substrate.
- Example 34 Production of TFT substrate (FIG. 2) [1] Preparation of polyimide resin laminated film A glass substrate (AN100 (Asahi Glass Co., Ltd.)) having a thickness of 300 mm ⁇ 400 mm ⁇ 0.7 mm was used as a support substrate (reference numeral: 1), and the firing temperature of the polyimide resin film A was 300 ° C.
- a resin laminated film code: 2 ′
- a resin laminated film which is a polyimide resin laminated film composed of a polyimide resin film A (code: 2A ′) and a resin film (code: 2B ′) is used. Produced.
- TFT substrate A gas barrier layer (symbol: 5) made of SiO was formed on the polyimide resin laminate film (on a glass substrate) produced by the above-described method using a plasma CVD method. Thereafter, a bottom gate type TFT (symbol: 6) was formed, and an insulating film (not shown) made of Si 3 N 4 was formed so as to cover the TFT. Next, after forming a contact hole in the insulating film, a wiring (height: 1.0 ⁇ m, not shown) connected to the TFT through the contact hole was formed on the insulating film. This wiring is for connecting an organic EL element formed between TFTs or an organic EL element formed in a later process and the TFT.
- a flattening layer (symbol: 7) was formed on the insulating film in a state where the unevenness due to the wiring was embedded.
- the planarizing layer is formed by spin-coating a photosensitive polyimide varnish on a substrate, pre-baking on a hot plate (120 ° C. ⁇ 3 minutes), exposing and developing through a mask having a desired pattern, and under an air flow The heat treatment was performed at 230 ° C. for 60 minutes. The applicability when applying the varnish was good, and no wrinkles or cracks were observed in the flattened layer obtained after exposure, development and heat treatment. Furthermore, the average level difference of the wiring was 500 nm, a 5 ⁇ m square contact hole was formed in the prepared planarization layer, and the thickness was about 2 ⁇ m.
- Examples 35-36 A TFT substrate was produced in the same manner as in Example 34 except that the polyimide resin laminate film was produced under the same conditions as in Example 26, except that the conditions were the same as those in Example 8 shown in Table 8.
- the obtained TFT substrate (FIG. 2) was subjected to a laser peeling test by the method described in (6), the evaluation of the curl of the TFT substrate by the method described in (14), and the element missing by the method described in (15). Was evaluated. Moreover, after producing a polyimide laminated film on the glass substrate, the warpage amount of the glass substrate was measured by the method described in (13). The results are shown in Table 8.
- Example 37 Production of polyimide substrate organic EL display (FIG. 3)
- top emission type organic EL element The following parts were formed on the flattening layer (symbol: 7) of the TFT obtained by the above method to fabricate a top emission type organic EL element. .
- a first electrode (symbol: 8) made of Al / ITO (Al: reflective electrode) was connected to a wiring through a contact hole.
- a resist was applied, prebaked, exposed through a mask having a desired pattern, and developed.
- patterning of the first electrode (symbol: 8) was performed by wet etching using an ITO etchant.
- the resist pattern was stripped using a resist stripping solution (mixed solution of monoethanolamine and diethylene glycol monobutyl ether).
- the substrate after peeling was washed with water and dehydrated by heating at 200 ° C. for 30 minutes to obtain an electrode substrate with a planarizing layer.
- the change in the thickness of the flattening layer was less than 1% after heat dehydration with respect to that before the stripping solution treatment.
- the first electrode (symbol: 8) thus obtained corresponds to the anode of the organic EL element.
- an insulating layer (symbol: 9) having a shape covering the end of the first electrode (symbol: 8) was formed.
- the photosensitive polyimide varnish was also used for the insulating layer.
- a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask in a vacuum vapor deposition apparatus, and a red organic EL light emitting layer (symbol: 11R), a green organic EL light emitting layer ( Code: 11G) and a blue organic EL light emitting layer (code: 11B) were provided.
- a second electrode (symbol: 10) made of Mg / ITO was formed on the entire surface above the substrate.
- a SiON sealing film (symbol: 12) was formed by CVD film formation.
- the organic EL element was peeled from the glass substrate by the method described in (6) to produce an organic EL display (FIG. 3).
- an organic EL display FIG. 3
- a voltage was applied to the obtained active matrix type organic EL display via a drive circuit, good light emission was exhibited.
- the obtained organic EL element was inferior compared with the organic EL element produced using the glass substrate.
- Example 38 Production of polyimide substrate organic EL display (FIG. 4) [1] Preparation of Polyimide Resin Laminate Film Resin laminate that is a polyimide resin laminate film resin laminate film composed of polyimide resin film A (symbol: 2A ′) and resin film (symbol: 2B ′) by the method described in Example 34. A membrane (sign: 2 ') was produced.
- TFT substrate was fabricated by the method described in Example 34.
- top emission type organic EL element was produced by the method described in Example 34, except that the organic light emitting layer was changed to a white organic EL light emitting layer (symbol: 11 W).
- Supporting substrate 2 2 ′ resin laminated film 2A, 2A ′ polyimide resin film A 2B, 2B 'Resin film 3 Black matrix 4R Red colored pixel 4G Green colored pixel 4B Blue colored pixel 5 Gas barrier layer 6 TFT 7 Flattening layer 8 First electrode 9 Insulating layer 10 Second electrode 11R Red organic EL light emitting layer 11G Green organic EL light emitting layer 11B Blue organic EL light emitting layer 11W White organic EL light emitting layer 12 Sealing film 13 Adhesive layer 20 CF 30 Organic EL device
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Optical Filters (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 That is, the present invention is a resin laminated film having a polyimide resin film on at least one surface of the resin film, wherein the polyimide resin film is a polyimide resin film A described below.
Polyimide resin film A: a polyimide resin film having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film having a thickness of 100 nm is formed.
本発明の樹脂積層膜は、樹脂膜の少なくとも一方の表面にポリイミド樹脂膜を有する樹脂積層膜であって、前記ポリイミド樹脂膜が、以下のポリイミド樹脂膜Aである樹脂積層膜である。
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 <Resin laminated film>
The resin laminate film of the present invention is a resin laminate film having a polyimide resin film on at least one surface of the resin film, and the polyimide resin film is a polyimide laminate film A described below.
Polyimide resin film A: a polyimide resin film having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film having a thickness of 100 nm is formed.
(B)濃度1×10-4mol/LのN-メチル-2-ピロリドン溶液としたときに、波長300~400nmの波長域において、光路長1cmの条件下での吸光度の最大値が0.6を超えるジアミン誘導体。 The polyimide contained in the polyimide resin film A is not particularly limited, but the main component of the diamine residue in the polyimide is preferably derived from the following (B) diamine derivative.
(B) When an N-methyl-2-pyrrolidone solution having a concentration of 1 × 10 −4 mol / L is used, the maximum absorbance under the condition of an optical path length of 1 cm in the wavelength range of 300 to 400 nm is 0. More than 6 diamine derivatives.
樹脂膜1は、物性Aを満たすポリイミド樹脂膜であれば特に限定されないが、そのポリイミド成分にはポリイミドBを含むことが好ましく、ポリイミド成分がポリイミドBからなることがさらに好ましい。(B)ジアミン誘導体は、濃度1×10-4mol/LのN-メチル-2-ピロリドン溶液における、波長300~400nmの波長域において、光路長1cmの条件下での吸光度の最大値が0.6を超える波長を有するジアミン誘導体であれば特に限定されず、例えば、ビス[4-(4-アミノフェノキシ)フェニル]スルホン、9,9-ビス(4-アミノフェニル)フルオレン、2,2-ビス[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、ビス[4-(3-アミノフェノキシ)フェニル]スルホン、ビス[3-(3-アミノフェノキシ)フェニル]スルホン、ビス[3-(4-アミノフェノキシ)フェニル]スルホン、ビス[4-(4-アミノフェノキシ)フェニル]エーテル、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、ビス(4-アミノフェノキシ)ビフェニル、2,2-ビス[3-(3-アミノベンズアミド)-4-ヒドロキシフェニル]ヘキサフルオロプロパン、ビス[3-(3-アミノベンズアミド)-4-ヒドロキシフェニル]スルホン、2,2-ビス[2-(3-アミノフェニル)-5-ベンゾオキサゾリル]ヘキサフルオロプロパン、ビス[2-(3-アミノフェニル)-5-ベンゾオキサゾリル]スルホン等が挙げられる。 (Resin film 1)
The resin film 1 is not particularly limited as long as it is a polyimide resin film satisfying the physical property A, but the polyimide component preferably includes polyimide B, and the polyimide component is more preferably composed of polyimide B. (B) The diamine derivative has a maximum absorbance of 0 in an optical path length of 1 cm in a wavelength region of 300 to 400 nm in an N-methyl-2-pyrrolidone solution having a concentration of 1 × 10 −4 mol / L. Diamine derivatives having a wavelength exceeding .6, for example, bis [4- (4-aminophenoxy) phenyl] sulfone, 9,9-bis (4-aminophenyl) fluorene, 2,2- Bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [3- (3-aminophenoxy) phenyl] sulfone, bis [3- (4 -Aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy) phenyl] ether, 1,4-bis (4-aminophenoxy) Benzene, 1,3-bis (4-aminophenoxy) benzene, bis (4-aminophenoxy) biphenyl, 2,2-bis [3- (3-aminobenzamido) -4-hydroxyphenyl] hexafluoropropane, bis [ 3- (3-aminobenzamido) -4-hydroxyphenyl] sulfone, 2,2-bis [2- (3-aminophenyl) -5-benzoxazolyl] hexafluoropropane, bis [2- (3-amino Phenyl) -5-benzoxazolyl] sulfone.
本発明の樹脂積層膜において、樹脂膜2の樹脂の種類については特に制限はなく、ポリイミド樹脂、ポリベンゾオキサゾール樹脂、ポリアミドイミド樹脂、ポリアミド樹脂、ポリエステル樹脂、ポリカーボネート樹脂、ポリエーテルスルホン樹脂、アクリル樹脂、エポキシ樹脂などが挙げられる。中でも耐熱性、機械特性などの観点から、ポリイミド樹脂、ポリベンゾオキサゾール樹脂、ポリアミドイミド樹脂およびポリアミド樹脂からなる群より選ばれる少なくとも1種の樹脂を含むことが好ましく、更には耐薬品性や低CTE性の観点からポリイミド樹脂がより好ましい。 (Resin film 2)
In the resin laminated film of the present invention, the resin type of the
以下では、ポリイミド前駆体の一般的な製造方法について説明する。一般的に、下記一般式(11)で表されるポリイミド樹脂は下記一般式(12)で表されるポリイミド前駆体樹脂をイミド閉環(イミド化反応)させることで得られる。イミド化反応の方法としては特に限定されず、熱イミド化や化学イミド化が挙げられる。中でも、ポリイミド樹脂膜の耐熱性、可視光領域での透明性の観点から、熱イミド化が好ましい。 (Production method of polyimide precursor)
Below, the general manufacturing method of a polyimide precursor is demonstrated. Generally, the polyimide resin represented by the following general formula (11) is obtained by imide ring closure (imidization reaction) of a polyimide precursor resin represented by the following general formula (12). It does not specifically limit as a method of imidation reaction, Thermal imidation and chemical imidation are mentioned. Among these, thermal imidization is preferable from the viewpoint of heat resistance of the polyimide resin film and transparency in the visible light region.
本発明の樹脂積層膜は少なくとも下記(1)~(3)の工程を含む製造方法で作製することができる。
(1)支持基板上に、ポリイミド樹脂膜Aを製膜する工程。
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程。
(3)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程。 (Production method of resin laminated film)
The resin laminated film of the present invention can be produced by a production method including at least the following steps (1) to (3).
(1) A step of forming a polyimide resin film A on a support substrate.
(2) A step of further laminating a resin film on the resin film to form a resin laminated film.
(3) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
ポリイミド前駆体樹脂溶液を支持基板上に塗布してポリイミド樹脂膜Aのポリイミド前駆体樹脂組成物膜を形成する。支持基板としては例えばシリコン、セラミックス類、ガリウムヒ素、ソーダ石灰硝子、無アルカリ硝子などが用いられるが、これらに限定されない。塗布方法は、例えば、スリットコート法、スピンコート法、スプレーコート法、ロールコート法、バーコート法などの方法があり、これらの手法を組み合わせて塗布しても構わない。これらの中でも、スピンコートもしくはスリットコートによる塗布が好ましい。 (1) Step of forming polyimide resin film A on a support substrate A polyimide precursor resin solution is applied to the support substrate to form a polyimide precursor resin composition film of polyimide resin film A. As the support substrate, for example, silicon, ceramics, gallium arsenide, soda lime glass, non-alkali glass, or the like is used, but is not limited thereto. Examples of the coating method include a slit coating method, a spin coating method, a spray coating method, a roll coating method, and a bar coating method, and these methods may be used in combination. Among these, spin coating or slit coating is preferable.
続いて第2のポリイミド前駆体樹脂溶液を塗布し、1層目と同様に乾燥、樹脂膜2を製膜して、樹脂積層膜とする。 (2) Step of further laminating a resin film on the resin film to form a resin laminated film Subsequently, a second polyimide precursor resin solution is applied and dried in the same manner as the first layer to form a
支持基板側から紫外光を照射して、支持基板から樹脂積層膜を剥離する。支持基板上に樹脂膜1が存在するため、樹脂膜2の種類に関わらず、樹脂積層膜は良好なレーザー剥離性を示す。 (3) Step of peeling the resin laminated film by irradiating ultraviolet light from the supporting substrate side The ultraviolet ray is irradiated from the supporting substrate side to peel the resin laminated film from the supporting substrate. Since the
本発明の樹脂積層膜は、樹脂膜2の上にTFTを備えたTFT基板や、樹脂膜2の上に有機EL素子を備えた有機EL素子基板や、樹脂膜2の上にカラーフィルタを備えたカラーフィルタ基板として利用できる。これらは、樹脂膜1側に支持基板を備えていてもよい。 (Use of resin laminated film)
The resin laminated film of the present invention includes a TFT substrate having a TFT on the
(1)支持基板上に、ポリイミド樹脂膜Aを製膜する工程。
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程。
(3)前記樹脂積層膜上に無機膜を形成する工程。
(4)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程。 The substrate including the resin laminated film of the present invention has a feature that it is flexible and can be bent greatly. Such a flexible substrate is called a flexible substrate. The flexible substrate can be manufactured through at least the following steps (1), (2), and (4). A flexible substrate having an inorganic film on a polyimide resin film can be produced through at least the following steps (1) to (4).
(1) A step of forming a polyimide resin film A on a support substrate.
(2) A step of further laminating a resin film on the resin film to form a resin laminated film.
(3) A step of forming an inorganic film on the resin laminated film.
(4) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
(1)支持基板上にポリイミド樹脂膜Aを製膜する工程。
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程。
(3)前記樹脂積層膜上にブラックマトリックスを形成する工程。
(4)前記樹脂積層膜上に着色画素を形成する工程。
(5)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程。 The CF including the resin laminated film of the present invention can be manufactured through at least the following steps.
(1) A step of forming a polyimide resin film A on a support substrate.
(2) A step of further laminating a resin film on the resin film to form a resin laminated film.
(3) A step of forming a black matrix on the resin laminated film.
(4) A step of forming colored pixels on the resin laminated film.
(5) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
(1)支持基板上にポリイミド樹脂膜Aを製膜する工程。
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程。
(3)前記樹脂積層膜上にガスバリア層を形成する工程
(4)前記樹脂積層膜上にTFTを形成する工程。
(5)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程。 A TFT substrate using the resin laminated film of the present invention can be manufactured through at least the following steps.
(1) A step of forming a polyimide resin film A on a support substrate.
(2) A step of further laminating a resin film on the resin film to form a resin laminated film.
(3) A step of forming a gas barrier layer on the resin laminated film (4) A step of forming a TFT on the resin laminated film.
(5) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
もよいが、例えば、スパッタリング法、真空蒸着法、イオンプレーティング法、プラズマ
CVD法等の気相中より材料を堆積させて膜を形成する気相堆積法などが適している。中でも、特に優れた導電性・透明性が得られるという観点から、スパッタリング法を用いて成膜することが好ましい。また、透明導電層の膜厚は20~500nmであることが好ましく、50~300nmであることがさらに好ましい。 The transparent conductive layer may be formed by any method as long as the target thin film can be formed. For example, from the gas phase such as sputtering, vacuum deposition, ion plating, and plasma CVD. A vapor deposition method or the like in which a material is deposited to form a film is suitable. Especially, it is preferable to form into a film using sputtering method from a viewpoint that the outstanding electroconductivity and transparency are acquired. The film thickness of the transparent conductive layer is preferably 20 to 500 nm, and more preferably 50 to 300 nm.
(1)支持基板上にポリイミド樹脂膜Aを製膜する工程。
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程。
(3)前記樹脂積層膜上に有機EL素子を形成する工程。
(4)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程。 The organic EL element including the resin laminated film of the present invention can be produced through at least the following steps.
(1) A step of forming a polyimide resin film A on a support substrate.
(2) A step of further laminating a resin film on the resin film to form a resin laminated film.
(3) The process of forming an organic EL element on the said resin laminated film.
(4) A step of peeling the resin laminated film by irradiating ultraviolet light from the support substrate side.
とを貼り合わせる。その後、第1、第2支持基板にそれぞれ支持基板側から紫外光を照射することで第1、第2支持基板をそれぞれ剥離する。 FIG. 4 shows an example of an organic EL display obtained by bonding the CF of the present invention and a white light emitting organic EL element. The following method is mentioned as an example of the manufacturing process. The
And paste together. Thereafter, the first and second support substrates are respectively peeled by irradiating the first and second support substrates with ultraviolet light from the support substrate side.
100mm×100mm×0.7mm厚のガラス基板(AN-100 旭硝子(株)製)を支持基板として、これに、ミカサ(株)製のスピンコーターMS-A200を用いて140℃×4分のプリベーク後の厚さが所定の厚さ(0.15、0.75、1.5、3.0、7.5、15.0μm)になるように、回転数を調節してワニス(合成例1~19)をスピン塗布した。その後、大日本スクリーン(株)製ホットプレートD-SPINを用いて140℃×4分のプリベーク処理を行った。プリベーク処理後の塗膜をイナートオーブン(光洋サーモシステム(株)製 INH-21CD)を用いて窒素気流下(酸素濃度20ppm以下)、3.5℃/minで300℃または400℃まで昇温し、30分間保持し、5℃/minで50℃まで冷却し、樹脂膜1を作製した。続いて、樹脂膜1上に、上記と同様にプリベーク後の厚さが15.0μmになるようにワニス(合成例20~22、調製例1,2)をスピン塗布した。その後、上記の同様にプリベーク処理/イナートオーブンでの焼成を行い、樹脂膜1上に樹脂膜2を製膜した。 (1) Production of polyimide resin laminated film (on glass substrate) A glass substrate (AN-100 manufactured by Asahi Glass Co., Ltd.) having a thickness of 100 mm × 100 mm × 0.7 mm was used as a support substrate, and a spin made by Mikasa Co., Ltd. The thickness after pre-baking at 140 ° C. for 4 minutes using the coater MS-A200 becomes a predetermined thickness (0.15, 0.75, 1.5, 3.0, 7.5, 15.0 μm). In this manner, varnishes (Synthesis Examples 1 to 19) were spin-coated while adjusting the number of rotations. Thereafter, a prebake treatment at 140 ° C. for 4 minutes was performed using a hot plate D-SPIN manufactured by Dainippon Screen Co., Ltd. The pre-baked coating film was heated to 300 ° C. or 400 ° C. at 3.5 ° C./min using an inert oven (INH-21CD manufactured by Koyo Thermo System Co., Ltd.) under a nitrogen stream (
100mm×100mm×0.7mm厚のガラス基板(AN-100 旭硝子(株)製)を支持基板として、これに、ミカサ(株)製のスピンコーターMS-A200を用いて140℃×4分のプリベーク後の厚さが15.0μmになるように、回転数を調節してワニス(合成例1~22、調製例1,2)をスピン塗布した。その後、大日本スクリーン(株)製ホットプレートD-SPINを用いて140℃×4分のプリベーク処理を行った。プリベーク処理後の塗膜をイナートオーブン(光洋サーモシステム(株)製 INH-21CD)を用いて窒素気流下(酸素濃度20ppm以下)、3.5℃/minで300℃または400℃まで昇温し、30分間保持し、5℃/minで50℃まで冷却し、ポリイミド樹脂膜を作製した。得られたポリイミド樹脂膜の厚さは10.0μmであった。 (2) Preparation of polyimide resin film (on glass substrate) A 100 mm × 100 mm × 0.7 mm thick glass substrate (AN-100 manufactured by Asahi Glass Co., Ltd.) was used as a support substrate, and a spin coater manufactured by Mikasa Co., Ltd. Using MS-A200, spin coating was applied to the varnish (Synthesis Examples 1 to 22, Preparation Examples 1 and 2) while adjusting the rotation speed so that the thickness after pre-baking at 140 ° C. for 4 minutes was 15.0 μm. . Thereafter, a prebake treatment at 140 ° C. for 4 minutes was performed using a hot plate D-SPIN manufactured by Dainippon Screen Co., Ltd. The pre-baked coating film was heated to 300 ° C. or 400 ° C. at 3.5 ° C./min using an inert oven (INH-21CD manufactured by Koyo Thermo System Co., Ltd.) under a nitrogen stream (
紫外可視分光光度計((株)島津製作所製 MultiSpec1500)を用い、400nmにおける光透過率を測定した。なお、測定には(1)で作製したガラス基板上ポリイミド樹脂積層膜を用いた。 (3) Measurement of light transmittance of polyimide resin laminated film Using a UV-visible spectrophotometer (MultiSpec 1500, manufactured by Shimadzu Corporation), the light transmittance at 400 nm was measured. In addition, the polyimide resin laminated film on the glass substrate produced by (1) was used for the measurement.
紫外可視分光光度計((株)島津製作所製 MultiSpec1500)を用い、266nm、308nm、343nm、351nm、355nmにおける吸光度を測定した。なお、光路長1cmの石英セルを用いて、濃度1×10-4mol/Lのジアミン溶液(溶媒:NMP)の測定を行った。 (4) Measurement of absorbance of diamine solution The absorbance at 266 nm, 308 nm, 343 nm, 351 nm, and 355 nm was measured using an ultraviolet-visible spectrophotometer (MultiSpec 1500 manufactured by Shimadzu Corporation). A diamine solution (solvent: NMP) having a concentration of 1 × 10 −4 mol / L was measured using a quartz cell having an optical path length of 1 cm.
(1)に記載の方法でガラス基板上に製膜したポリイミド樹脂積層膜を、GD-OES分析装置((株)堀場製作所製 GD-Profiler2)を用いて、樹脂膜2から樹脂膜1に向けてエッチング(径5mmφ)を行い、膜厚100nmの樹脂膜1を作製した。顕微紫外可視近赤外分光光度計(日本分光(株)製 MSV-5100)を用いて、厚さ100nmの膜としたときの樹脂膜1の266nm、308nm、343nm、351nm、355nmにおける光透過率を測定した。同様のエッチングと光透過率測定を5箇所で行い、それらの平均値を光透過率とした。 (5) Measurement of light transmittance of
(1)に記載の方法で得られたポリイミド樹脂積層膜、(2)に記載の方法で得られたポリイミド樹脂膜、及び後述する方法で作製したCF、TFT基板、有機ELディスプレイに対して、308nmのエキシマレーザー(形状:21mm×1.0mm)をガラス基板側から照射して、レーザー剥離試験を行った。レーザーは、短軸方向に0.5mmずつずらしながら照射した。照射領域の縁に沿って切り込みを入れた際に、膜が剥離したエネルギーを剥離に必要な照射エネルギーを測定し、以下の基準で評価を行った。
A:照射エネルギーが230mJ/cm2以下。
B:照射エネルギーが230mJ/cm2を超え、250mJ/cm2以下。
C:照射エネルギーが250mJ/cm2を超え、270mJ/cm2以下。
D:照射エネルギーが270mJ/cm2を超え、290mJ/cm2以下。
E:照射エネルギーが290mJ/cm2を超える。 (6) Laser peeling test Polyimide resin laminated film obtained by the method described in (1), polyimide resin film obtained by the method described in (2), and CF, TFT substrate, organic produced by the method described later The EL display was irradiated with a 308 nm excimer laser (shape: 21 mm × 1.0 mm) from the glass substrate side, and a laser peeling test was performed. The laser was irradiated while shifting by 0.5 mm in the minor axis direction. When cutting was made along the edge of the irradiated region, the energy required for peeling was measured for the energy peeled from the film, and the following criteria were used for evaluation.
A: Irradiation energy is 230 mJ / cm 2 or less.
B: irradiation energy exceeds 230mJ / cm 2, 250mJ / cm 2 or less.
C: Irradiation energy exceeds 250 mJ / cm 2 and is 270 mJ / cm 2 or less.
D: Irradiation energy exceeds 270 mJ / cm 2 and is 290 mJ / cm 2 or less.
E: Irradiation energy exceeds 290 mJ / cm 2 .
熱機械分析装置(エスアイアイ・ナノテクノロジー(株)製 EXSTAR6000 TMA/SS6000)を用いて、窒素気流下で測定を行った。昇温方法は、以下の条件にて行った。第1段階で昇温レート5℃/minで150℃まで昇温して試料の吸着水を除去し、第2段階で降温レート5℃/minで室温まで空冷した。第3段階で、昇温レート5℃/minで本測定を行い、CTE、Tgを求めた。なお、CTEは、第3段階における50℃~200℃の平均値である。また、測定には(1)で作成したガラス基板上ポリイミド樹脂積層膜、及び(2)で作製したガラス基板上ポリイミド樹脂膜を(6)記載の方法でレーザー剥離して得たポリイミド樹脂積層膜(実施例1~29、比較例1~3)、及びポリイミド樹脂膜(合成例1~23、調製例1、2)を用いた。さらに、ポリイミド樹脂積層膜(樹脂膜1+樹脂膜2)のCTEと樹脂膜2のCTEの差(ポリイミド樹脂積層膜のCTE-樹脂膜2のCTE)をとり、樹脂膜1との積層化によるCTEの変化を求めた。 (7) Measurement of coefficient of linear thermal expansion (CTE) and glass transition temperature (Tg) Using a thermomechanical analyzer (EXSTAR6000 TMA / SS6000 manufactured by SII NanoTechnology Co., Ltd.), measurement was performed under a nitrogen stream. . The temperature raising method was performed under the following conditions. In the first stage, the temperature was raised to 150 ° C. at a temperature rising rate of 5 ° C./min to remove adsorbed water from the sample, and in the second stage, air cooling was performed to a room temperature at a temperature lowering rate of 5 ° C./min. In the third stage, the main measurement was performed at a temperature rising rate of 5 ° C./min to obtain CTE and Tg. CTE is an average value of 50 ° C. to 200 ° C. in the third stage. For measurement, the polyimide resin laminated film on the glass substrate prepared in (1) and the polyimide resin laminated film obtained by laser peeling the polyimide resin film on the glass substrate produced in (2) by the method described in (6). (Examples 1 to 29, Comparative Examples 1 to 3) and polyimide resin films (Synthesis Examples 1 to 23, Preparation Examples 1 and 2) were used. Further, the difference between the CTE of the polyimide resin laminated film (
XYZ表色系色度図における透過色度座標(x, y)を、顕微分光光度計(大塚電子(株)製 MCPD-2000)を用いて測定した。なお、測定には(1)で作製したガラス基板上ポリイミド樹脂積層膜を用いた。また、光源にはC光源(x0=0.310, y0=0.316)を用いた。 (8) Measurement of chromaticity coordinates Transmission chromaticity coordinates (x, y) in an XYZ color system chromaticity diagram were measured using a microspectrophotometer (MCPD-2000 manufactured by Otsuka Electronics Co., Ltd.). In addition, the polyimide resin laminated film on the glass substrate produced by (1) was used for the measurement. A C light source (x0 = 0.310, y0 = 0.316) was used as the light source.
原子間力顕微鏡(AFM)(BRUKER社製 DIMENSION Icon)を用いて、(6)で剥離したポリイミド樹脂積層膜の剥離面の表面粗さ(最大高さ(Rz))の測定を行った。 (9) Measurement of surface roughness Surface roughness (maximum height (Rz)) of the peeled surface of the polyimide resin laminated film peeled in (6) using an atomic force microscope (AFM) (DIMENSION Icon manufactured by BRUKER) ) Was measured.
熱重量測定装置(株式会社島津製作所製 TGA-50)を用いて窒素気流下で測定を行った。昇温方法は、以下の条件にて行った。第1段階で、昇温レート3.5℃/minで350℃まで昇温して試料の吸着水を除去し、第2段階で、降温レート10℃/min室温まで冷却した。第3段階で、昇温レート10℃/minで本測定を行い、1%熱重量減少温度を求めた。なお、測定には(1)で作成したガラス基板上ポリイミド樹脂積層膜を(6)記載の方法でレーザー剥離して得たポリイミド樹脂積層膜(実施例1~29)を用いた。 (10) Measurement of 1% weight loss temperature (heat resistance) Measurement was performed under a nitrogen stream using a thermogravimetric apparatus (TGA-50 manufactured by Shimadzu Corporation). The temperature raising method was performed under the following conditions. In the first stage, the temperature of the sample was raised to 350 ° C. at a temperature rise rate of 3.5 ° C./min to remove the adsorbed water of the sample, and in the second stage, the temperature drop rate was 10 ° C./min to room temperature. In the third stage, the main measurement was performed at a temperature rising rate of 10 ° C./min to obtain a 1% thermogravimetric decrease temperature. For the measurement, polyimide resin laminated films (Examples 1 to 29) obtained by laser peeling the polyimide resin laminated film on the glass substrate prepared in (1) by the method described in (6) were used.
(6)に記載の方法でガラス基板から剥離したポリイミド樹脂積層膜の剥離面に、酸化インジウムと酸化スズの複合酸化物ターゲットを用いてスパッタリングを行い、膜厚150nmのITO層を製膜した。このときの圧力は6.7×10-1Pa、基板温度は150度で3kWの直流電源を用いてスパッタリングを行った。 (11) Formation of indium tin oxide (ITO) film Sputtering is performed on the release surface of the polyimide resin laminated film peeled from the glass substrate by the method described in (6) using a composite oxide target of indium oxide and tin oxide. Then, an ITO layer having a thickness of 150 nm was formed. Sputtering was performed using a DC power source of 3 kW at a pressure of 6.7 × 10 −1 Pa and a substrate temperature of 150 ° C.
(11)に記載の方法で作製したITO膜付きポリイミド樹脂積層膜について、温度40℃、湿度90%RH、測定面積50cm2の条件で、水蒸気透過率測定装置(モコン(MOCON)製 PERMATRAN(登録商標))を使用して、水蒸気透過率を測定した。サンプル数は水準当たり2検体とし、測定回数は同一サンプルについて各10回とし、その平均値を水蒸気透過率(g/(m2・day))としてガスバリア性評価の指標とした。 (12) Measurement of water vapor transmission rate About the polyimide resin laminated film with ITO film produced by the method described in (11), a water vapor transmission rate measurement device (under conditions of temperature 40 ° C, humidity 90% RH, measurement area 50 cm 2 ) The water vapor transmission rate was measured using PERMATRAN (registered trademark) manufactured by MOCON. The number of samples was 2 samples per level, the number of measurements was 10 times for the same sample, and the average value was used as an index for gas barrier property evaluation as water vapor permeability (g / (m 2 · day)).
反り測定は、300×350×0.7mm厚のガラス基板(AN-100 旭硝子(株)製)上に、(1)に記載の方法でポリイミド樹脂積層膜を作製し、(株)ミツトヨ製の精密石常盤(1000mm×1000mm)の上に載せ、試験板の4辺の各中点および各頂点の計8箇所について常盤から浮いている量(距離)を、隙間ゲージを用いて測定した。これらの平均値を反り量とした。測定は室温(25℃)で行なった。 (13) Warpage measurement of glass substrate after resin laminated film formation Warpage measurement is performed on a glass substrate (AN-100 manufactured by Asahi Glass Co., Ltd.) having a thickness of 300 × 350 × 0.7 mm, according to the method described in (1) A polyimide resin laminated film was prepared by placing it on a precision stone regular board (1000 mm x 1000 mm) manufactured by Mitutoyo Co., Ltd. and floated from the regular board for a total of eight points on each side of the four sides of the test plate and each vertex. The quantity (distance) was measured using a gap gauge. These average values were taken as the amount of warpage. The measurement was performed at room temperature (25 ° C.).
TFT基板、カラーフィルタ基板のカールは、以下のように評価を行った。 (14) Curling Evaluation of TFT Substrate and Color Filter Substrate Curling of the TFT substrate and color filter substrate was evaluated as follows.
A(非常に良好): カール量が2mm以下
B(良好):カール量が2mmを超え、5mm以下
C(可):カール量が5mmを超え、10mm以下
D(不良):カール量が10mmを超える、もしくは筒状である。 The TFT substrate and color filter substrate peeled from the glass substrate by the method described in (6) were stored at room temperature for 30 minutes. The TFT substrate and color filter substrate after stationary storage were cut into 30 mm squares, and were further allowed to stand at room temperature for 30 minutes on a smooth glass plate so that the substrate side was down. Thereafter, observation was performed, and the maximum amount of the portion where the 30 mm square TFT substrate or the color filter substrate floated from the glass plate was measured as the curl amount, and evaluation was performed according to the following criteria.
A (very good): curl amount is 2 mm or less B (good): curl amount exceeds 2 mm and 5 mm or less C (possible): curl amount exceeds 5 mm and 10 mm or less D (defect): curl amount is 10 mm It exceeds or is cylindrical.
(6)記載の方法でガラス基板から剥離したTFT基板の素子欠けやカラーフィルタ基板の画素欠けの数を評価した。評価には、光学顕微鏡((株)Nikon製、OPTIPHOT300)を用い、目視で1000素子や画素観察を行った。 (15) Evaluation of chipping of TFT substrate and color filter substrate The number of chipping of the TFT substrate peeled off from the glass substrate by the method described in (6) and the number of pixel chipping of the color filter substrate were evaluated. For the evaluation, an optical microscope (manufactured by Nikon Corporation, OPTIPHOT300) was used to visually observe 1000 elements and pixels.
実施例で用いた物質等の略称を以下にまとめる。
PMDA:ピロメリット酸二無水物
BPDA:3,3’,4,4’-ビフェニルテトラカルボン酸二無水物
ODPA:3,3’,4,4’-オキシジフタル酸二無水物
6FDA:4,4’-(ヘキサフルオロイソプロピリデン)ジフタル酸無水物
BSAA:2,2-ビス(4-(3,4-ジカルボキシフェノキシ)フェニル)プロパン二無水物
CBDA:シクロブタンテトラカルボン酸二無水物
PMDA-HS:1R,2S,4S,5R-シクロへキサンテトラカルボン酸二無水物
BPDA-H:3,3’,4,4’-ジシクロへキサンテトラカルボン酸二無水物
PDA:パラフェニレンジアミン
3,3’-DDS:3,3’-ジアミノジフェニルスルホン
TFMB:2,2’-ビス(トリフルオロメチル)ベンジジン
HFHA:化学式(3)の構造
BABOHF:化学式(5)の構造
BABODS:化学式(6)の構造
BABOHA:化学式(13)の構造
BABOBA:化学式(14)の構造
BAPS:ビス[4-(3-アミノフェノキシ)フェニル]スルホン
CHDA:トランス-1,4-ジアミノシクロへキサン
BABB:化学式(15)の構造
DAE:4,4’-ジアミノジフェニルエーテル
SiDA:ビス(3-アミノプロピル)テトラメチルジシロキサン
NMP:N-メチル-2-ピロリドン
GBL:ガンマブチロラクトン (Notation of raw materials used)
Abbreviations such as substances used in the examples are summarized below.
PMDA: pyromellitic dianhydride BPDA: 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride ODPA: 3,3 ′, 4,4′-oxydiphthalic dianhydride 6FDA: 4,4 ′ -(Hexafluoroisopropylidene) diphthalic anhydride BSAA: 2,2-bis (4- (3,4-dicarboxyphenoxy) phenyl) propane dianhydride CBDA: cyclobutanetetracarboxylic dianhydride PMDA-HS: 1R , 2S, 4S, 5R-cyclohexanetetracarboxylic dianhydride BPDA-H: 3,3 ′, 4,4′-dicyclohexanetetracarboxylic dianhydride PDA:
乾燥窒素気流下、200mL4つ口フラスコにPMDA5.0505g(21.2mmol)、HFHA13.9971g(23.2mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 1 Synthesis of Polyimide Precursor Solution PMDA 5.0505 g (21.2 mmol), HFHA 13.9971 g (23.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask under a dry nitrogen stream and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA6.2357g(21.2mmol)、HFHA12.8119g(21.2mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 2: Synthesis of polyimide precursor solution BPDA 6.2357 g (21.2 mmol), HFHA 12.8119 g (21.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask under a dry nitrogen stream and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにODPA6.4597g(20.8mmol)、HFHA12.5879g(20.8mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 3 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, 6.4PA g (20.8 mmol) of ODPA, 12.5879 g (20.8 mmol) of HFHA, and 100 g of NMP were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコに6FDA8.0685g(18.2mmol)、HFHA10.9792g(18.2mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 4: Synthesis of polyimide precursor solution Under a dry nitrogen stream, 6FDA 8.0855 g (18.2 mmol), HFHA 10.7992 g (18.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBSAA8.8126g(16.9mmol)、HFHA10.2350g(16.9mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 5 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPSA 8.8126 g (16.9 mmol), HFHA 10.2350 g (16.9 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにCBDA4.6657g(23.8mmol)、HFHA14.3819g(23.8mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 6 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, CBDA 4.6657 g (23.8 mmol), HFHA 14.3819 g (23.8 mmol), and NMP 100 g were added to a 200 mL four-necked flask and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにPMDA-HS5.1527g(23.0mmol)、HFHA13.8949g(23.0mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 7 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, PMDA-HS 5.1527 g (23.0 mmol), HFHA 13.3.849 g (23.0 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA-H6.4058g(20.9mmol)、HFHA12.6418g(20.9mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 8 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA-H6.4058 g (20.9 mmol), HFHA 12.6418 g (20.9 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにPMDA-HS5.3869g(24.0mmol)、BABOHF13.6607g(24.0mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 9 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, PMDA-HS 5.3869 g (24.0 mmol), BABOHF 13.6607 g (24.0 mmol) and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにPMDA-HS6.0422g(27.0mmol)、BABODS13.0054g(27.0mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 10 Synthesis of Polyimide Precursor Solution PMDA-HS 6.0422 g (27.0 mmol), BABODS 13.0054 g (27.0 mmol), and NMP 100 g were placed in a 200 mL four-necked flask in a dry nitrogen stream and heated at 65 ° C. with stirring. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにPMDA-HS5.2923g(23.6mmol)、BABOHA13.7554g(23.6mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 11: Synthesis of polyimide precursor solution PMDA-HS 5.2923 g (23.6 mmol), BABOHA 13.7554 g (23.6 mmol) and NMP 100 g were placed in a 200 mL four-necked flask under a dry nitrogen stream and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA7.8637g(26.7mmol)、BABOBA11.1840g(26.7mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 12 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA 7.8737 g (26.7 mmol), BABOBA 11.1840 g (26.7 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにPMDA-HS6.6445g(29.6mmol)、BABOBA12.4031g(29.6mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 13 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, PMDA-HS 6.6445 g (29.6 mmol), BABOBA 12.2.431 g (29.6 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにODPA7.9558g(25.6mmol)、BAPS11.0918g(25.6mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 14 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, ODPA 7.9558 g (25.6 mmol), BAPS 11.0918 g (25.6 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA4.7698g(16.2mmol)、PMDA-HS1.2114g(5.4mmol)、HFHA13.0665g(21.6mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 15: Synthesis of polyimide precursor solution In a 200 mL four-necked flask under a dry nitrogen stream, BPDA 4.7698 g (16.2 mmol), PMDA-HS 1.2114 g (5.4 mmol), HFHA 13.0665 g (21.6 mmol), NMP 100 g And heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA3.2443g(11.0mmol)、PMDA-HS2.4719g(11.0mmol)、HFHA13.3314g(22.0mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 16 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, in a 200 mL four-necked flask, BPDA 3.2443 g (11.0 mmol), PMDA-HS 2.4719 g (11.0 mmol), HFHA 13.3314 g (22.0 mmol), NMP 100 g And heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA1.6557g(5.6mmol)、PMDA-HS3.7846g(16.8mmol)、HFHA13.6073g(22.5mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリアミド酸溶液とした。 Synthesis Example 17: Synthesis of polyimide precursor solution Under a dry nitrogen stream, BPDA 1.6557 g (5.6 mmol), PMDA-HS 3.77846 g (16.8 mmol), HFHA 13.6073 g (22.5 mmol), NMP 100 g in a 200 mL four-necked flask And heated and stirred at 65 ° C. After 6 hours, it was cooled to a polyamic acid solution.
乾燥窒素気流下、200mL4つ口フラスコにPMDA-HS9.0374g(40.3mmol)、3,3’-DDS10.0102g(40.3mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 18 Synthesis of Polyamic Acid Solution Under a dry nitrogen stream, PMDA-HS 9.0374 g (40.3 mmol), 3,3′-DDS 10.0102 g (40.3 mmol), and NMP 100 g were placed in a 200 mL four-necked flask at 65 ° C. And stirred with heating. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA-H14.0776g(46.0mmol)、PDA4.9700g(46.0mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 19 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA-H14.0776 g (46.0 mmol), PDA 4.9700 g (46.0 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. . After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA13.7220g(46.6mmol)、CHDA5.3256g(46.6mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 20 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA 13.7220 g (46.6 mmol), CHDA 5.3256 g (46.6 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにODPA9.3724g(30.2mmol)、TFMB9.6752g(30.2mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 21: Synthesis of polyimide precursor solution Under a dry nitrogen stream, ODPA 9.3724 g (30.2 mmol), TFMB 9.6752 g (30.2 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA13.9283g(47.3mmol)、PDA5.1193g(47.3mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis example 22: Synthesis | combination of polyimide precursor solution BPDA13.283g (47.3mmol), PDA5.1193g (47.3mmol), NMP100g was put into a 200 mL four necked flask under dry nitrogen stream, and it heated and stirred at 65 degreeC. After 6 hours, it was cooled to obtain a polyimide precursor solution.
乾燥窒素気流下、200mL4つ口フラスコにBPDA7.3799g(25.1mmol)、BABB11.4074g(25.1mmol)、NMP100gを入れて65℃で加熱撹拌した。6時間後、冷却してポリイミド前駆体溶液とした。 Synthesis Example 23 Synthesis of Polyimide Precursor Solution Under a dry nitrogen stream, BPDA 7.3799 g (25.1 mmol), BABB 11.4074 g (25.1 mmol), and NMP 100 g were placed in a 200 mL four-necked flask and heated and stirred at 65 ° C. After 6 hours, it was cooled to obtain a polyimide precursor solution.
合成例2で得たポリイミド前駆体溶液中のポリイミド前駆体100重量部に対してシリカ微粒子が100重量部となるように、ポリイミド前駆体溶液にオルガノシリカゾル(日産化学工業株式会社製、商品名PMA-ST、粒子径10-30nm)を添加し、ポリイミド前駆体-シリカナノ粒子ワニスを得た。 Preparation Example 1: Preparation of Polyimide Precursor / Silica Nanoparticle Solution The polyimide precursor solution was prepared so that the silica fine particles would be 100 parts by weight with respect to 100 parts by weight of the polyimide precursor in the polyimide precursor solution obtained in Synthesis Example 2. Organosilica sol (manufactured by Nissan Chemical Industries, Ltd., trade name: PMA-ST, particle size: 10-30 nm) was added to obtain a polyimide precursor-silica nanoparticle varnish.
合成例22で得たポリイミド前駆体溶液中のポリイミド前駆体100重量部に対してシリカ微粒子が50重量部となるように、ポリイミド前駆体溶液にオルガノシリカゾル(日産化学工業株式会社製、商品名PMA-ST、粒子径10-30nm)を添加し、ポリイミド前駆体-シリカナノ粒子ワニスを得た。 Preparation Example 2: Preparation of polyimide precursor / silica nanoparticle solution The polyimide precursor solution was prepared so that the silica fine particles would be 50 parts by weight with respect to 100 parts by weight of the polyimide precursor in the polyimide precursor solution obtained in Synthesis Example 22. Organosilica sol (manufactured by Nissan Chemical Industries, Ltd., trade name: PMA-ST, particle size: 10-30 nm) was added to obtain a polyimide precursor-silica nanoparticle varnish.
(1)に記述の方法で、合成例1および合成例20のポリイミド前駆体溶液を用いて、膜厚1μmの樹脂膜1(300℃焼成)、膜厚10μmの樹脂膜2(300℃焼成)を作製した。得られたポリイミド樹脂積層膜を用いて、(3)、(6)~(10)および(12)に記載の方法で、樹脂積層膜の光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表2に示す。また、(5)に記載した方法で作製した、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を測定した。その結果を表6に示す。 Example 1
Using the polyimide precursor solutions of Synthesis Example 1 and Synthesis Example 20 by the method described in (1), a
樹脂膜1の作製に用いるポリイミド前駆体溶液を表2~3に記載の通りに変更したこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表2~3に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Examples 2 to 11
A polyimide resin laminated film was produced in the same manner as in Example 1 except that the polyimide precursor solution used for producing the
樹脂膜1の作製に合成例12のポリイミド樹脂前駆体溶液を用い、その焼成温度を400℃に変更したこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表3に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Example 12
A polyimide resin laminate film was produced in the same manner as in Example 1 except that the polyimide resin precursor solution of Synthesis Example 12 was used for production of the
樹脂膜1の作製に用いるポリイミド前駆体溶液を表3に記載の通りに変更したこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表3に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Examples 13-17
A polyimide resin laminated film was produced in the same manner as in Example 1 except that the polyimide precursor solution used for production of the
合成例1のポリイミド前駆体溶液の代わりに合成例7のポリイミド前駆体溶液を用い、樹脂膜1の膜厚を表4に記載の通りに変更したこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、積層化によるCTEの変化の測定、Tgの測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表4に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Examples 18-22
The polyimide precursor solution of Synthesis Example 7 was used instead of the polyimide precursor solution of Synthesis Example 1, and the polyimide film was changed in the same manner as in Example 1 except that the film thickness of the
樹脂膜1の作製に表4に記載のポリイミド前駆体溶液を用いたこと、及び樹脂膜2の作製に表4に記載のポリイミド前駆体溶液を用いて、その焼成温度を400℃にしたこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表4に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Examples 23-25
Other than using the polyimide precursor solution described in Table 4 for the production of the
樹脂膜1の作製に表4に記載のポリイミド前駆体溶液を用い、その焼成温度を400℃に変更したこと、及び樹脂膜2の作製に合成例22のポリイミド前駆体溶液を用いて、その焼成温度を400℃にしたこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表4に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Examples 26-27
The polyimide precursor solution shown in Table 4 was used for the production of the
樹脂膜2の作製に表4に記載のポリイミド前駆体溶液を用いたこと以外、実施例23と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、CTEの測定、Tgの測定、積層化によるCTEの変化の測定、色度座標の測定、剥離面のRzの測定、1%重量減少温度の測定、剥離面へのITO膜の製膜した後に水蒸気透過率の測定を行った。その結果を表4に示す。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Examples 28-29
A polyimide resin laminated film was produced in the same manner as in Example 23 except that the polyimide precursor solution shown in Table 4 was used for production of the
樹脂膜1の作製に用いるポリイミド前駆体溶液を表5に記載の通りに変更したこと以外、実施例1と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、色度座標の測定を行った。その結果を表5に示す。レーザー剥離試験に用いた装置の最大照射エネルギー(400mJ/cm2)でも、樹脂積層膜を剥離することができなかった。そのため、CTEの測定、積層化によるCTEの変化の測定、剥離面のRzの測定、1%重量減少温度の測定、ITO膜の製膜、水蒸気透過率の測定は実施しなかった。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Comparative Examples 1 and 2
A polyimide resin laminated film was produced in the same manner as in Example 1 except that the polyimide precursor solution used for production of the
樹脂膜1の作製に用いるポリイミド前駆体溶液を表5に記載の通りに変更したこと以外、実施例24と同様にして、ポリイミド樹脂積層膜を作製した。実施例1と同様に、光透過率の測定、レーザー剥離試験、色度座標の測定を行った。その結果を表5に示す。レーザー剥離試験に用いた装置の最大照射エネルギー(400mJ/cm2)でも、樹脂積層膜を剥離することができなかった。そのため、CTEの測定、積層化によるCTEの変化の測定、剥離面のRzの測定、1%重量減少温度の測定、ITO膜の製膜、水蒸気透過率の測定は実施しなかった。また、厚さ100nmの膜としたときの樹脂膜1の波長300~400nmの波長域における光透過率の最小値、及び波長266nm、308nm、343nm、351nm、355nmにおける光透過率を表6に示す。 Comparative Example 3
A polyimide resin laminated film was produced in the same manner as in Example 24 except that the polyimide precursor solution used for the production of the
DAE(0.30mol)、PDA(0.65mol)およびSiDA(0.05mol)を、850gのGBLおよび850gのNMPと共に仕込み、ODPA(0.9975mol)を添加し、80℃で3時間反応させた。無水マレイン酸(0.02mol)を添加し、更に80℃で1時間反応させ、ポリアミド酸溶液(樹脂の濃度20重量%)を得た。 Preparation Example 3: Synthesis of polyamic acid solution DAE (0.30 mol), PDA (0.65 mol) and SiDA (0.05 mol) were charged together with 850 g of GBL and 850 g of NMP, and ODPA (0.9975 mol) was added. And reacted at 80 ° C. for 3 hours. Maleic anhydride (0.02 mol) was added and further reacted at 80 ° C. for 1 hour to obtain a polyamic acid solution (
調整例3のポリアミド酸溶液250gに、50gのカーボンブラック(MA100 三菱化学(株)製)および200gのNMPを混合し、ダイノーミルKDL-Aを用いて、直径0.3mmのジルコニアビーズを使用して、3200rpmで3時間の分散処理を行い、黒色樹脂分散液を得た。 Preparation Example 4: Preparation of black resin composition for forming black matrix 50 g of carbon black (manufactured by Mitsubishi Chemical Corporation) and 200 g of NMP were mixed with 250 g of the polyamic acid solution of Preparation Example 3, and Dino mill KDL. Using -A, a zirconia bead having a diameter of 0.3 mm was used for dispersion treatment at 3200 rpm for 3 hours to obtain a black resin dispersion.
ピグメントレッドPR177、8.05gを3-メチル-3-メトキシブタノール50gとともに仕込み、ホモジナイザーを用い、7000rpmで5時間分散後、ガラスビーズを濾過し、除去した。アクリル共重合体溶液(ダイセル化学工業(株)製“サイクロマー”P、ACA-250、43wt%溶液)70.00g、多官能モノマーとしてペンタエリスリトールテトラメタクリレート30.00g、光重合開始剤として“イルガキュア”369、15.00gにシクロペンタノン260.00gを加えた濃度20重量%の感光性アクリル樹脂溶液(AC)134.75gを加え、感光性赤レジストを得た。同様にして、ピグメントグリーンPG38とピグメントイエローPY138からなる感光性緑レジスト、ピグメントブルーPB15:6からなる感光性青レジストを得た。 Preparation Example 5 Production of Photosensitive Color Resist 8.05 g of Pigment Red PR177 was charged together with 50 g of 3-methyl-3-methoxybutanol and dispersed using a homogenizer at 7000 rpm for 5 hours, and then the glass beads were filtered and removed. 70.00 g of acrylic copolymer solution (“Cyclomer” P, ACA-250, 43 wt% solution manufactured by Daicel Chemical Industries, Ltd.), 30.00 g of pentaerythritol tetramethacrylate as a polyfunctional monomer, “Irgacure as a photopolymerization initiator” "369. 15.00 g of cyclopentanone 260.00 g and 20 wt% photosensitive acrylic resin solution (AC) 134.75 g were added to obtain a photosensitive red resist. Similarly, a photosensitive green resist composed of Pigment Green PG38 and Pigment Yellow PY138 and a photosensitive blue resist composed of Pigment Blue PB15: 6 were obtained.
[1]ポリイミド樹脂積層膜の作製
支持基板(符号:1)として300mm×350mm×0.7mm厚のガラス基板(AN100 旭硝子(株)製)を用い、ポリイミド樹脂膜Aの焼成温度を300℃にしたこと以外、実施例18と同様にして、ポリイミド積層膜A(符号:2A)と樹脂膜(符号:2B)からなるポリイミド樹脂積層膜である樹脂積層膜(符号:2)を作製した。 Example 30 Production of color filter (FIG. 1)
[1] Preparation of Polyimide Resin Laminate Film A 300 mm × 350 mm × 0.7 mm thick glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) is used as the support substrate (symbol: 1), and the firing temperature of the polyimide resin film A is 300 ° C. Except for the above, a resin laminated film (code: 2), which is a polyimide resin laminated film composed of a polyimide laminated film A (code: 2A) and a resin film (code: 2B), was produced in the same manner as in Example 18.
上記で作製したガラス基板上のポリイミド樹脂積層膜上に調整例4で作製した黒色樹脂組成物をスピン塗布し、ホットプレートで130℃、10分間乾燥し、黒色の樹脂塗膜を形成した。ポジ型フォトレジスト(シプレー社製、“SRC-100”)をスピン塗布、ホットプレートで120℃、5分間プリベークし、超高圧水銀灯を用いて100mJ/cm2紫外線照射してマスク露光した後、2.38%のテトラメチルアンモニウムヒドロキシド水溶液を用いて、フォトレジストの現像と黒色の樹脂塗膜のエッチングを同時に行い、パターンを形成、メチルセロソルブアセテートでレジスト剥離し、ホットプレートで280℃、10分間加熱させることでイミド化させ、ポリイミド樹脂にカーボンブラックを分散したブラックマトリックス(符号:3)を形成した。ブラックマトリックスの厚さを測定したところ、1.4μmであった。 [2] Production of Resin Black Matrix The black resin composition produced in Preparation Example 4 was spin-coated on the polyimide resin laminated film on the glass substrate produced above, dried on a hot plate at 130 ° C. for 10 minutes, A resin coating was formed. A positive-type photoresist (Shipley Co., “SRC-100”) is spin coated, pre-baked on a hot plate at 120 ° C. for 5 minutes, exposed to 100 mJ / cm 2 ultraviolet rays using an ultra-high pressure mercury lamp, and exposed to a mask. Using 38% tetramethylammonium hydroxide aqueous solution, simultaneously develop photoresist and etch black resin coating to form pattern, strip resist with methyl cellosolve acetate, 280 ° C on hot plate for 10 minutes It was imidized by heating to form a black matrix (code: 3) in which carbon black was dispersed in a polyimide resin. The thickness of the black matrix was measured and found to be 1.4 μm.
[1]、[2]で作製したブラックマトリクスがパターン加工されたガラス基板上のポリイミド樹脂積層膜上に、熱処理後のブラックマトリクス開口部での膜厚が2.0μmになるようにスピナーの回転数を調整し、調製例5で調整した感光性赤レジストを塗布し、ホットプレートで100℃、10分間プリベークすることにより、赤色着色層を得た。次に、キャノン(株)製、紫外線露光機“PLA-5011”を用い、ブラックマトリクス開口部とブラックマトリクス上の一部の領域についてアイランド状に光が透過するクロム製フォトマスクを介して、100mJ/cm2(365nmの紫外線強度)で露光した。露光後に0.2%のテトラメチルアンモニウムヒドロキシド水溶液からなる現像液に浸漬を行い現像し、続いて純水洗浄後、230℃のオーブンで30分間加熱処理し、赤の着色画素(符号:4R)を作製した。同様にして、調製例5で調整した感光性緑レジストからなる緑の着色画素(符号:4G)、感光性青レジストからなる青の着色画素(符号:4Bを作製し、ガラス基板上に作製されたポリイミド基板カラーフィルタ(図1)を得た。 [3] Production of colored layer On the polyimide resin laminated film on the glass substrate on which the black matrix produced in [1] and [2] is patterned, the film thickness at the black matrix opening after the heat treatment is 2.0 μm. The rotational speed of the spinner was adjusted so that the photosensitive red resist prepared in Preparation Example 5 was applied and prebaked at 100 ° C. for 10 minutes on a hot plate to obtain a red colored layer. Next, using a UV exposure machine “PLA-5011” manufactured by Canon Inc., a black matrix opening and a partial area on the black matrix are passed through a chrome photomask through which light is transmitted in an island shape. / Cm 2 (ultraviolet intensity of 365 nm). After exposure, the film is dipped in a developer composed of a 0.2% tetramethylammonium hydroxide aqueous solution, developed, washed with pure water, and then heated in an oven at 230 ° C. for 30 minutes to give a red colored pixel (symbol: 4R). ) Was produced. Similarly, a green colored pixel (symbol: 4G) made of the photosensitive green resist prepared in Preparation Example 5 and a blue colored pixel (symbol: 4B) made of the photosensitive blue resist were prepared and manufactured on the glass substrate. A polyimide substrate color filter (FIG. 1) was obtained.
ポリイミド樹脂積層膜の作製を実施例18と同じ条件とする代わりに表6に記載の実施例と同じ条件に変更したこと以外、実施例30と同様にしてカラーフィルタを作製した。 Examples 31 to 33, Comparative Example 4
A color filter was produced in the same manner as in Example 30, except that the polyimide resin laminate film was produced under the same conditions as in Example 18, except that the conditions were the same as those in Examples shown in Table 6.
[1]ポリイミド樹脂積層膜の作製
支持基板(符号:1)として300mm×400mm×0.7mm厚のガラス基板(AN100(旭硝子(株)))を用い、ポリイミド樹脂膜Aの焼成温度を300℃にしたこと以外、実施例26と同様にして、ポリイミド樹脂膜A(符号:2A’)と樹脂膜(符号:2B’)からなるポリイミド樹脂積層膜である樹脂積層膜(符号:2’)を作製した。 Example 34 Production of TFT substrate (FIG. 2)
[1] Preparation of polyimide resin laminated film A glass substrate (AN100 (Asahi Glass Co., Ltd.)) having a thickness of 300 mm × 400 mm × 0.7 mm was used as a support substrate (reference numeral: 1), and the firing temperature of the polyimide resin film A was 300 ° C. In the same manner as in Example 26 except for the above, a resin laminated film (code: 2 ′), which is a polyimide resin laminated film composed of a polyimide resin film A (code: 2A ′) and a resin film (code: 2B ′), is used. Produced.
上記の方法で作製したポリイミド樹脂積層膜(ガラス基板上)に、プラズマCVD法を用いてSiOからなるガスバリア層(符号:5)を製膜した。その後、ボトムゲート型のTFT(符号:6)を形成し、このTFTを覆う状態でSi3N4からなる絶縁膜(図示せず)を形成した。次に、この絶縁膜に、コンタクトホールを形成した後、このコンタクトホールを介してTFTに接続される配線(高さ1.0μm、図示せず)を絶縁膜上に形成した。この配線は、TFT間または、後の工程で形成される有機EL素子とTFTとを接続するためのものである。 [2] Production of TFT substrate A gas barrier layer (symbol: 5) made of SiO was formed on the polyimide resin laminate film (on a glass substrate) produced by the above-described method using a plasma CVD method. Thereafter, a bottom gate type TFT (symbol: 6) was formed, and an insulating film (not shown) made of Si 3 N 4 was formed so as to cover the TFT. Next, after forming a contact hole in the insulating film, a wiring (height: 1.0 μm, not shown) connected to the TFT through the contact hole was formed on the insulating film. This wiring is for connecting an organic EL element formed between TFTs or an organic EL element formed in a later process and the TFT.
ポリイミド樹脂積層膜の作製を実施例26と同じ条件とする代わりに表8に記載の実施例と同じ条件に変更したこと以外、実施例34と同様にしてTFT基板を作製した。 Examples 35-36
A TFT substrate was produced in the same manner as in Example 34 except that the polyimide resin laminate film was produced under the same conditions as in Example 26, except that the conditions were the same as those in Example 8 shown in Table 8.
[1]ポリイミド樹脂積層膜の作製
実施例34に記載の方法で、ポリイミド樹脂膜A(符号:2A’)と樹脂膜(符号:2B’)からなるポリイミド樹脂積層膜である樹脂積層膜(符号:2’)を作製した。
[2]TFT基板の作製
実施例34に記載の方法で、TFT基板を作製した。 Example 37 Production of polyimide substrate organic EL display (FIG. 3)
[1] Preparation of Polyimide Resin Laminate Film A resin laminate film (symbol: a polyimide resin laminate film composed of a polyimide resin film A (symbol: 2A ′) and a resin film (symbol: 2B ′) by the method described in Example 34. : 2 ').
[2] Fabrication of TFT substrate A TFT substrate was fabricated by the method described in Example 34.
上記の方法で得られたTFTの平坦化層(符号:7)の上に以下の各部位を形成して、トップエミッション型の有機EL素子を作製した。まず、平坦化層(符号:7) の上に、Al/ITO(Al:反射電極)からなる第一電極(符号:8)を、コンタクトホールを介して配線に接続させて形成した。その後、レジストを塗布、プリベークし、所望のパターンのマスクを介して露光し、現像した。このレジストパターンをマスクとして、ITOエッチャント用いたウェットエッチングにより第一電極(符号:8)のパターン加工を行った。その後、レジスト剥離液(モノエタノールアミンとジエチレングリコールモノブチルエーテルの混合液)を用いて該レジストパターンを剥離した。剥離後の基板を水洗し、200℃で30分間加熱脱水して平坦化層付き電極基板を得た。平坦化層の厚さの変化は、剥離液処理前に対して加熱脱水後で1%未満であった。こうして得られた第一電極(符号:8)は、有機EL素子の陽極に相当する。 [3] Fabrication of top emission type organic EL element The following parts were formed on the flattening layer (symbol: 7) of the TFT obtained by the above method to fabricate a top emission type organic EL element. . First, on the flattening layer (symbol: 7), a first electrode (symbol: 8) made of Al / ITO (Al: reflective electrode) was connected to a wiring through a contact hole. Thereafter, a resist was applied, prebaked, exposed through a mask having a desired pattern, and developed. Using this resist pattern as a mask, patterning of the first electrode (symbol: 8) was performed by wet etching using an ITO etchant. Thereafter, the resist pattern was stripped using a resist stripping solution (mixed solution of monoethanolamine and diethylene glycol monobutyl ether). The substrate after peeling was washed with water and dehydrated by heating at 200 ° C. for 30 minutes to obtain an electrode substrate with a planarizing layer. The change in the thickness of the flattening layer was less than 1% after heat dehydration with respect to that before the stripping solution treatment. The first electrode (symbol: 8) thus obtained corresponds to the anode of the organic EL element.
[1]ポリイミド樹脂積層膜の作製
実施例34に記載の方法で、ポリイミド樹脂膜A(符号:2A’)と樹脂膜(符号:2B’)からなるポリイミド樹脂積層膜樹脂積層膜である樹脂積層膜(符号:2’)を作製した。 Example 38 Production of polyimide substrate organic EL display (FIG. 4)
[1] Preparation of Polyimide Resin Laminate Film Resin laminate that is a polyimide resin laminate film resin laminate film composed of polyimide resin film A (symbol: 2A ′) and resin film (symbol: 2B ′) by the method described in Example 34. A membrane (sign: 2 ') was produced.
実施例34に記載の方法で、TFT基板を作製した。 [2] Fabrication of TFT substrate A TFT substrate was fabricated by the method described in Example 34.
有機発光層を白色有機EL発光層(符号:11W)に変更したこと以外は、実施例34に記載の方法でトップエミッション型有機EL素子を作製した。 [3] Production of top emission type organic EL element A top emission type organic EL element was produced by the method described in Example 34, except that the organic light emitting layer was changed to a white organic EL light emitting layer (symbol: 11 W).
実施例30で得られたガラス基板付きカラーフィルタと上記[3]で得られたガラス基板付きトップエミッション型有機EL素子を、接着層(符号:13)を介して貼り合わせた。続いて、(6)に記載の方法で、ガラス基板からカラーフィルタと有機EL素子を剥離し、有機ELディスプレイ(図4)を作製した。得られたアクティブマトリックス型の有機ELディスプレイに駆動回路を介して電圧を印加したところ、良好な発光を示した。また、得られた有機EL素子は、ガラス基板を用いて作製した有機EL素子と比較して、遜色の無いものであった。 [4] Production of organic EL display The color filter with a glass substrate obtained in Example 30 and the top emission type organic EL element with a glass substrate obtained in [3] above were bonded via an adhesive layer (symbol: 13). Pasted together. Subsequently, the color filter and the organic EL element were peeled from the glass substrate by the method described in (6) to produce an organic EL display (FIG. 4). When a voltage was applied to the obtained active matrix type organic EL display via a drive circuit, good light emission was exhibited. Moreover, the obtained organic EL element was inferior compared with the organic EL element produced using the glass substrate.
2、2’ 樹脂積層膜
2A、2A’ ポリイミド樹脂膜A
2B、2B’ 樹脂膜
3 ブラックマトリックス
4R 赤の着色画素
4G 緑の着色画素
4B 青の着色画素
5 ガスバリア層
6 TFT
7 平坦化層
8 第一電極
9 絶縁層
10 第二電極
11R 赤色有機EL発光層
11G 緑色有機EL発光層
11B 青色有機EL発光層
11W 白色有機EL発光層
12 封止膜
13 接着層
20 CF
30 有機EL素子 1 Supporting
2B, 2B '
7 Flattening
30 Organic EL device
Claims (22)
- 樹脂膜の少なくとも一方の表面にポリイミド樹脂膜を有する樹脂積層膜であって、前記ポリイミド樹脂膜が、以下のポリイミド樹脂膜Aである樹脂積層膜。
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 A resin laminated film having a polyimide resin film on at least one surface of the resin film, wherein the polyimide resin film is the following polyimide resin film A.
Polyimide resin film A: a polyimide resin film having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film having a thickness of 100 nm is formed. - 前記ポリイミド樹脂膜Aに含まれるポリイミドにおけるジアミン残基の主成分が以下の(B)ジアミン誘導体に由来する請求項1に記載の樹脂積層膜。
(B)濃度1×10-4mol/LのN-メチル-2-ピロリドン溶液としたときに、波長300~400nmの波長域において、光路長1cmの条件下での吸光度の最大値が0.6を超えるジアミン誘導体。 The resin laminated film according to claim 1, wherein a main component of a diamine residue in the polyimide contained in the polyimide resin film A is derived from the following (B) diamine derivative.
(B) When an N-methyl-2-pyrrolidone solution having a concentration of 1 × 10 −4 mol / L is used, the maximum absorbance under the condition of an optical path length of 1 cm in the wavelength range of 300 to 400 nm is 0. More than 6 diamine derivatives. - 前記(B)ジアミン誘導体の前記吸光度の最大値が1.0以上である請求項1または2に記載の樹脂積層膜。 The resin laminate film according to claim 1 or 2, wherein the maximum absorbance of the (B) diamine derivative is 1.0 or more.
- 前記ポリイミド樹脂膜の厚さが100nm~1μmである請求項1~3のいずれかに記載の樹脂積層膜。 4. The resin laminated film according to claim 1, wherein the polyimide resin film has a thickness of 100 nm to 1 μm.
- 前記(B)ジアミン誘導体が、式(1)または(2)で表される構造を含む請求項1~4のいずれかに記載の樹脂積層膜。
- 前記ポリイミド樹脂膜Aに含まれるポリイミドにおける酸二無水物残基が、芳香族酸二無水物残基を主成分とする請求項1~5のいずれかに記載の樹脂積層膜。 6. The resin laminate film according to claim 1, wherein the acid dianhydride residue in the polyimide contained in the polyimide resin film A is mainly composed of an aromatic acid dianhydride residue.
- 前記芳香族酸二無水物残基が、ピロメリット酸二無水物もしくは3,3’,4,4’-ビフェニルテトラカルボン酸二無水物に由来する請求項6記載の樹脂積層膜。 The resin laminated film according to claim 6, wherein the aromatic acid dianhydride residue is derived from pyromellitic dianhydride or 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride.
- 前記ポリイミド樹脂膜Aに含まれるポリイミドにおける酸二無水物残基が、脂環式酸二無水物残基を主成分とするか、脂肪族酸二無水物残基を主成分とするか、または脂環式酸二無水物残基および脂肪族酸二無水物残基の合計を主成分とする請求項1~5のいずれかに記載の樹脂積層膜。 The acid dianhydride residue in the polyimide contained in the polyimide resin film A is based on an alicyclic acid dianhydride residue, an aliphatic acid dianhydride residue as a main component, or The resin laminate film according to any one of claims 1 to 5, comprising a total of an alicyclic acid dianhydride residue and an aliphatic acid dianhydride residue as a main component.
- 前記ポリイミド樹脂膜Aに含まれるポリイミドにおける酸二無水物残基が、脂環式酸二無水物残基を主成分とするか、または脂環式酸二無水物残基および脂肪族酸二無水物残基の合計を主成分とし、前記脂環式酸二無水物残基が、式(3)~(6)のいずれかで表されるテトラカルボン酸二無水物化合物に由来する請求項8記載の樹脂積層膜。
- 前記樹脂積層膜の線熱膨張係数が50℃~200℃の範囲で-10~30ppm/℃以下である、請求項1~9のいずれかに記載の樹脂積層膜。 The resin laminate film according to any one of claims 1 to 9, wherein a linear thermal expansion coefficient of the resin laminate film is -10 to 30 ppm / ° C or less in a range of 50 ° C to 200 ° C.
- 前記樹脂積層膜のガラス転移温度が400℃以上である、請求項1~10のいずれかに記載の樹脂積層膜。 The resin laminate film according to any one of claims 1 to 10, wherein a glass transition temperature of the resin laminate film is 400 ° C or higher.
- 前記樹脂積層膜の積層数が2である請求項1~11のいずれかに記載の樹脂積層膜。 The resin laminate film according to any one of claims 1 to 11, wherein the number of laminates of the resin laminate film is two.
- 前記樹脂積層膜のうち前記ポリイミド樹脂膜以外の樹脂膜がポリイミド樹脂、ポリベンゾオキサゾール樹脂、ポリアミドイミド樹脂およびポリアミド樹脂からなる群より選ばれる少なくとも1種の樹脂を含む請求項1~12のいずれかに記載の樹脂積層膜。 The resin film other than the polyimide resin film in the resin laminated film includes at least one resin selected from the group consisting of a polyimide resin, a polybenzoxazole resin, a polyamideimide resin, and a polyamide resin. The resin laminate film according to 1.
- 請求項1~13のいずれかに記載の樹脂積層膜の、前記ポリイミド樹脂膜A上に支持基板を備えた積層体。 A laminate comprising the resin laminate film according to any one of claims 1 to 13 and a support substrate on the polyimide resin film A.
- 請求項1~13のいずれかに記載の樹脂積層樹脂膜上にTFTを備えたTFT基板。 A TFT substrate comprising a TFT on the resin laminated resin film according to any one of claims 1 to 13.
- 請求項1~13のいずれかに記載の樹脂積層膜上に有機EL素子を備えた有機EL素子。 An organic EL device comprising an organic EL device on the resin laminate film according to any one of claims 1 to 13.
- 請求項1~13のいずれかに記載の樹脂積層膜上にカラーフィルタを備えたカラーフィルタ。 A color filter comprising a color filter on the resin laminate film according to any one of claims 1 to 13.
- 少なくとも下記(1)~(3)の工程を含む樹脂積層膜の製造方法。
(1)支持基板上に、以下のポリイミド樹脂膜Aを製膜する工程
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程
(3)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 A method for producing a resin laminated film comprising at least the following steps (1) to (3).
(1) Step of forming the following polyimide resin film A on a support substrate (2) Step of further laminating a resin film on the resin film to form a resin laminate film (3) Ultraviolet light from the support substrate side The polyimide resin film A: a polyimide having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film having a thickness of 100 nm is formed. Resin film. - 請求項18に記載の樹脂積層膜の製造方法において、(1)または(2)の工程の少なくとも一方で用いる樹脂膜の焼成温度が400℃以上である、樹脂積層膜の製造方法。 The method for producing a resin laminated film according to claim 18, wherein the firing temperature of the resin film used in at least one of the steps (1) or (2) is 400 ° C or higher.
- 少なくとも下記(1)~(4)の工程を含むTFT基板の製造方法。
(1)支持基板上に、以下のポリイミド樹脂膜Aを製膜する工程
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程
(3)前記樹脂積層膜上にTFTを形成する工程
(4)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 A method for producing a TFT substrate, comprising at least the following steps (1) to (4):
(1) Forming the following polyimide resin film A on a support substrate (2) Step of further laminating a resin film on the resin film to form a resin laminated film (3) On the resin laminated film Step of forming TFT (4) Step of irradiating ultraviolet light from the supporting substrate side to peel off the resin laminated film Polyimide resin film A: When a film having a thickness of 100 nm is formed, in a wavelength range of 300 to 400 nm A polyimide resin film having a minimum light transmittance of less than 50%. - 少なくとも下記(1)~(4)の工程を含む有機EL素子の製造方法。
(1)支持基板上に、以下のポリイミド樹脂膜Aを製膜する工程
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程
(3)前記樹脂積層膜上に有機EL素子を形成する工程
(4)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 A method for producing an organic EL device comprising at least the following steps (1) to (4):
(1) Forming the following polyimide resin film A on a support substrate (2) Step of further laminating a resin film on the resin film to form a resin laminated film (3) On the resin laminated film Step of forming organic EL element (4) Step of irradiating ultraviolet light from the support substrate side to peel off the resin laminated film Polyimide resin film A: wavelength of 300 to 400 nm when a film having a thickness of 100 nm is formed A polyimide resin film having a minimum light transmittance of less than 50% in the region. - 少なくとも下記(1)~(5)の工程を含むカラーフィルタの製造方法。
(1)支持基板上に、以下のポリイミド樹脂膜Aを製膜する工程
(2)前記樹脂膜上に更に樹脂膜を積層して樹脂積層膜を形成する工程
(3)前記樹脂積層膜上にブラックマトリックスを形成する工程
(4)前記樹脂積層膜上に着色画素を形成する工程
(5)支持基板側から紫外光を照射して、前記樹脂積層膜を剥離する工程
ポリイミド樹脂膜A:厚さ100nmの膜としたときに、波長300~400nmの波長域において、光透過率の最小値が50%未満であるポリイミド樹脂膜。 A method for producing a color filter comprising at least the following steps (1) to (5).
(1) Forming the following polyimide resin film A on a support substrate (2) Step of further laminating a resin film on the resin film to form a resin laminated film (3) On the resin laminated film Step of forming a black matrix (4) Step of forming colored pixels on the resin laminate film (5) Step of irradiating ultraviolet light from the support substrate side to peel off the resin laminate film Polyimide resin film A: thickness A polyimide resin film having a minimum light transmittance of less than 50% in a wavelength region of 300 to 400 nm when a film of 100 nm is formed.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016518214A JP6787124B2 (en) | 2015-03-26 | 2016-03-23 | Resin laminated film, laminated body containing it, TFT substrate, organic EL element color filter, and method for manufacturing them. |
CN201680017503.7A CN107405907B (en) | 2015-03-26 | 2016-03-23 | Laminated resin film and the laminated body containing it, TFT substrate, organic EL element colour filter and their manufacturing method |
KR1020177026590A KR102656566B1 (en) | 2015-03-26 | 2016-03-23 | Resin laminated film, laminated body containing the same, TFT substrate, organic EL device color filter, and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-064014 | 2015-03-26 | ||
JP2015064014 | 2015-03-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016152906A1 true WO2016152906A1 (en) | 2016-09-29 |
Family
ID=56978561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/059158 WO2016152906A1 (en) | 2015-03-26 | 2016-03-23 | Resin multilayer film, laminate containing same, tft substrate, organic el element, color filter, and methods for producing those |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6787124B2 (en) |
KR (1) | KR102656566B1 (en) |
CN (1) | CN107405907B (en) |
TW (1) | TWI735434B (en) |
WO (1) | WO2016152906A1 (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018025096A1 (en) * | 2016-08-05 | 2018-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
JP2018027660A (en) * | 2016-08-19 | 2018-02-22 | コニカミノルタ株式会社 | Functional laminate and method for production thereof |
KR20180089275A (en) * | 2017-01-31 | 2018-08-08 | 주식회사 엘지화학 | Laminate for manufacturing flexible substrate and process for manufacturing flexible substrate using same |
WO2018143588A1 (en) * | 2017-01-31 | 2018-08-09 | 주식회사 엘지화학 | Laminate for manufacturing flexible substrate and method for manufacturing flexible substrate by using same |
JP2018140885A (en) * | 2017-02-27 | 2018-09-13 | 三菱ケミカル株式会社 | Glass laminate, substrate for fabricating electronic device, and production method of electronic device |
JP2019014896A (en) * | 2016-09-16 | 2019-01-31 | 旭化成株式会社 | Polyimide precursor, resin composition, resin film and manufacturing method thereof |
WO2019026209A1 (en) * | 2017-08-02 | 2019-02-07 | シャープ株式会社 | Flexible display device and method for manufacturing flexible display device |
WO2019069723A1 (en) * | 2017-10-04 | 2019-04-11 | 三菱瓦斯化学株式会社 | Polyimide resin, polyimide varnish, and polyimide film |
WO2019078051A1 (en) * | 2017-10-16 | 2019-04-25 | 大日本印刷株式会社 | Polyimide film, polyimide film production method, laminate, surface material for display, touch panel member, liquid crystal display device, and organic electroluminescence display device |
JP2019073013A (en) * | 2017-10-16 | 2019-05-16 | 大日本印刷株式会社 | Polyimide film, method for producing polyimide film, laminate, display surface material, touch panel member, liquid crystal display device, and organic electroluminescent display |
CN109923148A (en) * | 2016-10-27 | 2019-06-21 | 宇部兴产株式会社 | Polyimides and the flexible device for having used the polyimides |
JP2019119779A (en) * | 2017-12-28 | 2019-07-22 | 日鉄ケミカル&マテリアル株式会社 | Method for producing polyimide film, and glass-polyimide laminate |
JP2019123864A (en) * | 2018-01-17 | 2019-07-25 | 東レ株式会社 | Resin composition, cured film, method for producing relief pattern of cured film, electronic component, semiconductor device, method for producing electronic component, and method for producing semiconductor device |
JP2020050734A (en) * | 2018-09-26 | 2020-04-02 | 東レ株式会社 | Resin composition for sacrificial layer and method for manufacturing semiconductor electronic component using the same |
US10629831B2 (en) | 2016-07-29 | 2020-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
JP2020109166A (en) * | 2018-12-28 | 2020-07-16 | 日鉄ケミカル&マテリアル株式会社 | Polyimide precursor composition and polyimide film and flexible device made of the same, and method for producing polyimide film |
JP2020115238A (en) * | 2020-04-17 | 2020-07-30 | 堺ディスプレイプロダクト株式会社 | Manufacturing method and manufacturing apparatus for flexible light emitting device |
CN112042274A (en) * | 2018-05-09 | 2020-12-04 | 堺显示器制品株式会社 | Method and apparatus for manufacturing flexible light emitting device |
CN112571901A (en) * | 2019-09-28 | 2021-03-30 | 日铁化学材料株式会社 | Polyimide film, metal-clad laminate, and circuit board |
WO2022210154A1 (en) * | 2021-04-01 | 2022-10-06 | 東レ株式会社 | Laminate and manufacturing method of semiconductor device |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7051446B2 (en) * | 2018-01-10 | 2022-04-11 | 株式会社ジャパンディスプレイ | Display device manufacturing method |
CN109679095A (en) * | 2018-12-18 | 2019-04-26 | 苏州予信天材新材料应用技术有限公司 | A kind of high temperature resistant type polyamide-polyether acid imide toughening polymer and preparation method thereof |
KR20210014533A (en) | 2019-07-30 | 2021-02-09 | 삼성전자주식회사 | Laminated film, and composition for preparing same |
CN110643040B (en) * | 2019-09-03 | 2020-10-27 | 武汉华星光电半导体显示技术有限公司 | Polyimide precursor, polyimide film formed therefrom, and method for preparing the polyimide film |
KR102254505B1 (en) * | 2019-12-31 | 2021-05-21 | (주)켐이 | Polyimide-based compound and photosensitive composition including the same |
CN111303423A (en) * | 2020-04-01 | 2020-06-19 | 武汉华星光电半导体显示技术有限公司 | Polyimide substrate, manufacturing method thereof and display panel |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH024201A (en) * | 1988-06-23 | 1990-01-09 | Toray Ind Inc | Heat resistant colored paste for color filter |
JP2000151046A (en) * | 1998-11-05 | 2000-05-30 | Sony Chem Corp | Polyimide film and flexible boar |
WO2013024849A1 (en) * | 2011-08-18 | 2013-02-21 | 東レ株式会社 | Polyamic acid resin composition, polyimide resin composition, polyimide oxazole resin composition, and flexible substrate containing same |
WO2014050933A1 (en) * | 2012-09-27 | 2014-04-03 | 新日鉄住金化学株式会社 | Display device production method |
JP2015127124A (en) * | 2013-12-27 | 2015-07-09 | 三星電子株式会社Samsung Electronics Co.,Ltd. | Gas barrier film and gas barrier film manufacturing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0327093D0 (en) | 2003-11-21 | 2003-12-24 | Koninkl Philips Electronics Nv | Active matrix displays and other electronic devices having plastic substrates |
CN101501832A (en) | 2006-08-10 | 2009-08-05 | 皇家飞利浦电子股份有限公司 | Active matrix displays and other electronic devices having plastic substrates |
US20120043691A1 (en) * | 2009-04-28 | 2012-02-23 | Ube Industries, Ltd | Multilayered polyimide film |
-
2016
- 2016-03-23 KR KR1020177026590A patent/KR102656566B1/en active IP Right Grant
- 2016-03-23 JP JP2016518214A patent/JP6787124B2/en active Active
- 2016-03-23 CN CN201680017503.7A patent/CN107405907B/en active Active
- 2016-03-23 WO PCT/JP2016/059158 patent/WO2016152906A1/en active Application Filing
- 2016-03-25 TW TW105109345A patent/TWI735434B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH024201A (en) * | 1988-06-23 | 1990-01-09 | Toray Ind Inc | Heat resistant colored paste for color filter |
JP2000151046A (en) * | 1998-11-05 | 2000-05-30 | Sony Chem Corp | Polyimide film and flexible boar |
WO2013024849A1 (en) * | 2011-08-18 | 2013-02-21 | 東レ株式会社 | Polyamic acid resin composition, polyimide resin composition, polyimide oxazole resin composition, and flexible substrate containing same |
WO2014050933A1 (en) * | 2012-09-27 | 2014-04-03 | 新日鉄住金化学株式会社 | Display device production method |
JP2015127124A (en) * | 2013-12-27 | 2015-07-09 | 三星電子株式会社Samsung Electronics Co.,Ltd. | Gas barrier film and gas barrier film manufacturing method |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11616206B2 (en) | 2016-07-29 | 2023-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
US10930870B2 (en) | 2016-07-29 | 2021-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
US10629831B2 (en) | 2016-07-29 | 2020-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
JP2018025788A (en) * | 2016-08-05 | 2018-02-15 | 株式会社半導体エネルギー研究所 | Method for manufacturing display device, display device, display module, and electronic apparatus |
WO2018025096A1 (en) * | 2016-08-05 | 2018-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
US10211239B2 (en) | 2016-08-05 | 2019-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
JP2018027660A (en) * | 2016-08-19 | 2018-02-22 | コニカミノルタ株式会社 | Functional laminate and method for production thereof |
JP2019014896A (en) * | 2016-09-16 | 2019-01-31 | 旭化成株式会社 | Polyimide precursor, resin composition, resin film and manufacturing method thereof |
CN109923148A (en) * | 2016-10-27 | 2019-06-21 | 宇部兴产株式会社 | Polyimides and the flexible device for having used the polyimides |
JP7215904B2 (en) | 2016-10-27 | 2023-01-31 | Ube株式会社 | Polyimide and flexible devices using it |
JPWO2018079707A1 (en) * | 2016-10-27 | 2019-09-19 | 宇部興産株式会社 | Polyimide and flexible device using the same |
US11118015B2 (en) | 2017-01-31 | 2021-09-14 | Lg Chem, Ltd. | Laminate for manufacturing flexible substrate and method for manufacturing flexible substrate by using same |
KR20180089275A (en) * | 2017-01-31 | 2018-08-08 | 주식회사 엘지화학 | Laminate for manufacturing flexible substrate and process for manufacturing flexible substrate using same |
WO2018143588A1 (en) * | 2017-01-31 | 2018-08-09 | 주식회사 엘지화학 | Laminate for manufacturing flexible substrate and method for manufacturing flexible substrate by using same |
CN109890614A (en) * | 2017-01-31 | 2019-06-14 | 株式会社Lg化学 | The method for being used to prepare the lamilate of flexible substrates and flexible substrates being manufactured by using it |
KR102008766B1 (en) * | 2017-01-31 | 2019-08-09 | 주식회사 엘지화학 | Laminate for manufacturing flexible substrate and process for manufacturing flexible substrate using same |
JP2020500111A (en) * | 2017-01-31 | 2020-01-09 | エルジー・ケム・リミテッド | Laminate for manufacturing flexible substrate and method for manufacturing flexible substrate using the same |
JP2018140885A (en) * | 2017-02-27 | 2018-09-13 | 三菱ケミカル株式会社 | Glass laminate, substrate for fabricating electronic device, and production method of electronic device |
WO2019026209A1 (en) * | 2017-08-02 | 2019-02-07 | シャープ株式会社 | Flexible display device and method for manufacturing flexible display device |
JP7215428B2 (en) | 2017-10-04 | 2023-01-31 | 三菱瓦斯化学株式会社 | Polyimide resin, polyimide varnish and polyimide film |
JPWO2019069723A1 (en) * | 2017-10-04 | 2020-09-10 | 三菱瓦斯化学株式会社 | Polyimide resin, polyimide varnish and polyimide film |
WO2019069723A1 (en) * | 2017-10-04 | 2019-04-11 | 三菱瓦斯化学株式会社 | Polyimide resin, polyimide varnish, and polyimide film |
JP7247510B2 (en) | 2017-10-16 | 2023-03-29 | 大日本印刷株式会社 | Polyimide film, method for producing polyimide film, laminate, display surface material, touch panel member, liquid crystal display device, and organic electroluminescence display device |
JP2019073013A (en) * | 2017-10-16 | 2019-05-16 | 大日本印刷株式会社 | Polyimide film, method for producing polyimide film, laminate, display surface material, touch panel member, liquid crystal display device, and organic electroluminescent display |
WO2019078051A1 (en) * | 2017-10-16 | 2019-04-25 | 大日本印刷株式会社 | Polyimide film, polyimide film production method, laminate, surface material for display, touch panel member, liquid crystal display device, and organic electroluminescence display device |
JP2019119779A (en) * | 2017-12-28 | 2019-07-22 | 日鉄ケミカル&マテリアル株式会社 | Method for producing polyimide film, and glass-polyimide laminate |
JP7016258B2 (en) | 2017-12-28 | 2022-02-04 | 日鉄ケミカル&マテリアル株式会社 | Method of manufacturing polyimide film and glass-polyimide laminate |
JP2019123864A (en) * | 2018-01-17 | 2019-07-25 | 東レ株式会社 | Resin composition, cured film, method for producing relief pattern of cured film, electronic component, semiconductor device, method for producing electronic component, and method for producing semiconductor device |
JP7363030B2 (en) | 2018-01-17 | 2023-10-18 | 東レ株式会社 | Resin composition, cured film, method for producing relief pattern of cured film, electronic component, semiconductor device, method for producing electronic component, method for producing semiconductor device |
CN112042274A (en) * | 2018-05-09 | 2020-12-04 | 堺显示器制品株式会社 | Method and apparatus for manufacturing flexible light emitting device |
JP7230398B2 (en) | 2018-09-26 | 2023-03-01 | 東レ株式会社 | SACRIFIC LAYER RESIN COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELECTRONIC PARTS |
JP2020050734A (en) * | 2018-09-26 | 2020-04-02 | 東レ株式会社 | Resin composition for sacrificial layer and method for manufacturing semiconductor electronic component using the same |
JP7217220B2 (en) | 2018-12-28 | 2023-02-02 | 日鉄ケミカル&マテリアル株式会社 | Polyimide precursor composition, polyimide film and flexible device produced therefrom, method for producing polyimide film |
JP2020109166A (en) * | 2018-12-28 | 2020-07-16 | 日鉄ケミカル&マテリアル株式会社 | Polyimide precursor composition and polyimide film and flexible device made of the same, and method for producing polyimide film |
CN112571901A (en) * | 2019-09-28 | 2021-03-30 | 日铁化学材料株式会社 | Polyimide film, metal-clad laminate, and circuit board |
JP2020115238A (en) * | 2020-04-17 | 2020-07-30 | 堺ディスプレイプロダクト株式会社 | Manufacturing method and manufacturing apparatus for flexible light emitting device |
WO2022210154A1 (en) * | 2021-04-01 | 2022-10-06 | 東レ株式会社 | Laminate and manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN107405907B (en) | 2019-06-18 |
JPWO2016152906A1 (en) | 2018-02-15 |
TW201700301A (en) | 2017-01-01 |
KR102656566B1 (en) | 2024-04-12 |
CN107405907A (en) | 2017-11-28 |
TWI735434B (en) | 2021-08-11 |
KR20170131435A (en) | 2017-11-29 |
JP6787124B2 (en) | 2020-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6787124B2 (en) | Resin laminated film, laminated body containing it, TFT substrate, organic EL element color filter, and method for manufacturing them. | |
JP6292351B1 (en) | POLYIMIDE RESIN, POLYIMIDE RESIN COMPOSITION, TOUCH PANEL USING SAME AND ITS MANUFACTURING METHOD, COLOR FILTER AND ITS MANUFACTURING METHOD, LIQUID CRYSTAL ELEMENT AND ITS MANUFACTURING METHOD, ORGANIC EL ELEMENT AND ITS MANUFACTURING METHOD | |
JP5773090B1 (en) | Polyimide precursor, polyimide resin film obtained therefrom, and display element, optical element, light receiving element, touch panel, circuit board, organic EL display, organic EL element, and color filter manufacturing method including the same | |
JP5660249B1 (en) | Polyimide precursor, polyimide, flexible substrate using the same, color filter and manufacturing method thereof, and flexible display device | |
WO2016052323A1 (en) | Support substrate for display, color filter employing same and method for manufacturing same, organic led element and method for manufacturing same, and flexible organic el display | |
JP6746888B2 (en) | Display support substrate, color filter using the same, manufacturing method thereof, organic EL element and manufacturing method thereof, and flexible organic EL display | |
JP6369141B2 (en) | Resin film, laminate including the same, organic EL element substrate using the same, color filter substrate, manufacturing method thereof, and flexible organic EL display | |
JP6206071B2 (en) | RESIN COMPOSITION, POLYIMIDE RESIN FILM USING THE SAME, COLOR FILTER CONTAINING THE SAME, TFT SUBSTRATE, DISPLAY DEVICE AND METHOD FOR PRODUCING THEM | |
JP2015078254A (en) | Resin composition, polyimide resin film using the same, color filter, tft substrate and display device including the same, and their production method | |
WO2018029766A1 (en) | Laminated resin film, laminated body including laminated resin film, tft substrate, organic el element color filter, and methods for manufacturing same | |
JP6331314B2 (en) | Flexible color filter, manufacturing method thereof, and flexible light-emitting device using the same | |
TW201809140A (en) | Laminated resin film, laminated body including the same, TFT substrate, organic EL element, color filter, and method for manufacturing the same requiring relatively low irradiation energy for laser peeling using ultraviolet light |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2016518214 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16768809 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20177026590 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16768809 Country of ref document: EP Kind code of ref document: A1 |