WO2016101550A1 - 运算放大电路、方法及温度传感器、存储介质 - Google Patents

运算放大电路、方法及温度传感器、存储介质 Download PDF

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WO2016101550A1
WO2016101550A1 PCT/CN2015/081012 CN2015081012W WO2016101550A1 WO 2016101550 A1 WO2016101550 A1 WO 2016101550A1 CN 2015081012 W CN2015081012 W CN 2015081012W WO 2016101550 A1 WO2016101550 A1 WO 2016101550A1
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circuit
capacitor
operational amplifier
switch
voltage signal
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French (fr)
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张小斌
操礼程
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Sanechips Technology Co Ltd
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Sanechips Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H03G3/12—Manually-operated control in untuned amplifiers having semiconductor devices incorporating negative feedback

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  • the invention relates to a signal amplification technology in the field of circuit design, in particular to an operational amplification circuit, a method, a temperature sensor and a computer storage medium.
  • Temperature sensors are widely used in computer (PC), mobile phones and other terminal equipment in the field of industrial temperature control. They are used to monitor the operating temperature in the terminal device chip and adjust the operating temperature in real time to achieve temperature control and power saving.
  • the traditional temperature sensor is realized by platinum resistance, thermistor and thermopile detection. Since the above technology has been developed very mature, the temperature detection accuracy of the traditional temperature sensor is high, and the temperature detection accuracy of 0.1 °C can usually be achieved.
  • CMOS Complementary Metal Oxide Semiconductor
  • the composition of the existing integrated temperature sensor is as shown in FIG. 1 , including: two triodes with an area ratio of N:1, an operational amplifier, and an analog-to-digital converter; since the triode has an IV (current-voltage) relationship, the temperature characteristic is The triode is best suited for generating a voltage that is linear with temperature.
  • an embodiment of the present invention provides an operational amplifier circuit, a method, a temperature sensor, and a computer storage medium, and can control the amplification factor of the operational amplifier by a preset voltage amplification parameter, thereby being flexible. Amplification of the difference voltage signal.
  • An embodiment of the present invention provides an operational amplifier circuit, where the operational amplifier circuit includes: a control sub-circuit and an operational amplifier sub-circuit; wherein
  • the control sub-circuit is configured to control the operational amplification sub-circuit to operate in a signal sampling phase when receiving the signal sampling instruction; and control the operational amplification circuit to operate in the signal after the operational amplification sub-circuit completes signal sampling Amplification phase
  • the operational amplification sub-circuit is configured to perform sampling of the first voltage signal and the second voltage signal when operating in the signal sampling phase; when operating in the signal amplification phase, according to the first voltage signal, the second voltage signal, and the reference
  • the power supply voltage and the preset voltage amplification parameter obtain the amplified difference voltage signal.
  • control sub-circuit includes: first to sixth switches, and a reference power source;
  • the operational amplifier sub-circuit includes: a first capacitor to a fourth capacitor, and an operational amplifier.
  • one end of the first switch is connected to the output first voltage signal, and the other end is connected to one end of the fifth switch and one end of the first capacitor in the operational amplifier circuit;
  • One end of the second switch is connected to one end of the third capacitor in the operational amplifier circuit, the inverting input end of the operational amplifier, and the other end of the first capacitor, and the other end and the third capacitor in the operational amplifier circuit The other end is connected to the non-inverting output of the operational amplifier;
  • one end of the third switch is connected to the output second voltage signal, and the other end is connected to one end of the sixth switch and one end of the second capacitor in the operational amplifier circuit;
  • One end of the fourth switch is connected to one end of the fourth capacitor in the operational amplifier circuit, the non-inverting input terminal of the operational amplifier, and the other end of the second capacitor, and the other end is connected to the fourth capacitor of the operational amplifier circuit.
  • the other end is connected to the inverting output terminal of the operational amplifier;
  • the other end of the fifth switch is connected to the positive pole of
  • one end of the first capacitor is connected to one end of the first switch and one end of the fifth switch in the control sub-circuit, and the other end is opposite to the inverting input end of the operational amplifier
  • One end of the third capacitor is connected to one end of the second switch in the control sub-circuit; one end of the second capacitor is connected to one end of the third switch and one end of the sixth switch in the control sub-circuit, and the other end is The non-inverting input terminal of the operational amplifier, one end of the fourth capacitor, and one end of the fourth switch in the control sub-circuit are connected; the other end of the third capacitor is connected to the non-inverting output terminal of the operational amplifier, and the control sub-circuit
  • the other end of the fourth switch is connected; the other end of the fourth capacitor is connected to the inverting output of the operational amplifier and the other end of the fourth switch in the control sub-circuit.
  • the first to fourth switches are in an off state, and when the fifth switch and the sixth switch are in a closed state, the operational amplification sub-circuit is controlled to operate in a signal amplification phase.
  • the preset voltage amplification parameter is C s /C i , where C s is the capacitance value of the first capacitor or the second capacitor, and C i is the capacitance value of the third capacitor or the fourth capacitor.
  • the capacitance value of the first capacitor is equal to the capacitance value of the second capacitor
  • the capacitance value of the third capacitor is equal to the capacitance value of the fourth capacitor.
  • an embodiment of the present invention further provides an operational amplification method, the method comprising:
  • the amplified difference voltage signal obtained according to the first voltage signal, the second voltage signal, the reference power voltage, and the preset voltage amplification parameter includes:
  • the amplified difference voltage signal V o is obtained according to the following formula:
  • V o C*[(Vin p -Vin n )-(Vsh + -Vsh - )]
  • C is a preset voltage amplification parameter
  • Vin p is a first voltage signal
  • Vin n is a second voltage signal
  • Vsh + is a positive reference power supply voltage
  • Vsh ⁇ is a negative reference power supply voltage
  • the method further includes:
  • the amplified difference voltage signal is adjusted according to the adjustment voltage to obtain an adjusted difference voltage signal.
  • the embodiment of the present invention further provides a temperature sensor, comprising: the above operational amplifier circuit.
  • the present invention also provides a computer storage medium having stored therein computer executable instructions for performing the aforementioned method of operational amplification.
  • the amplification parameter obtains the amplified difference voltage signal; thus, the embodiment of the present invention controls the amplification factor of the operational amplifier by a preset voltage amplification parameter, so that the amplification of the voltage difference signal can be flexibly realized.
  • FIG. 1 is a schematic structural diagram of a temperature sensor in a prior art according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of an operational amplifier circuit according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of an operational amplifier circuit in an actual application according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of an implementation flow of an operation amplification method according to an embodiment of the present invention.
  • the amplification factor of the operational amplifier is controlled by the preset voltage amplification parameter, so that the difference voltage signal can be flexibly amplified.
  • the embodiment of the present invention provides an operational amplification circuit.
  • the operational amplification circuit includes: a control sub-circuit 201 and an operational amplification sub-circuit 202;
  • the control sub-circuit 201 is configured to control the operational amplification sub-circuit 202 to operate in a signal sampling phase when receiving a signal sampling instruction; and to control the operational amplification circuit after the operational amplification sub-circuit 202 completes signal sampling Working in the signal amplification phase;
  • the operational amplification sub-circuit 202 is configured to perform sampling of the first voltage signal and the second voltage signal when operating in the signal sampling phase; when operating in the signal amplification phase, according to the first voltage signal, the second voltage signal, The reference power supply voltage and the preset voltage amplification parameters are amplified. The difference voltage signal.
  • control sub-circuit 201 the control sub-circuit 201 and the operational amplifier sub-circuit 202 will be described in detail in conjunction with the operational amplifier circuit shown in FIG. 3:
  • the control sub-circuit 201 includes: a first switch K 1 to a sixth switch K 6 , a reference power source Vsh;
  • the operational amplifier sub-circuit 202 includes a first capacitor C 1 to a fourth capacitor C 4 and an operational amplifier A.
  • the first switch K 1 to the sixth switch K 6 are a P-channel metal oxide semiconductor (PMOS), an N-channel metal oxide semiconductor (NMOS), and an N-channel metal oxide semiconductor (NMOS). And one of transistors such as a PNP type transistor and an NPN type transistor; and each switch is implemented by the same transistor.
  • PMOS P-channel metal oxide semiconductor
  • NMOS N-channel metal oxide semiconductor
  • NMOS N-channel metal oxide semiconductor
  • transistors such as a PNP type transistor and an NPN type transistor; and each switch is implemented by the same transistor.
  • the capacitance value of the first capacitor C 1 is equal to the capacitance value of the second capacitor C 2 , and is a capacitor Cs.
  • the capacitance value of the third capacitor C 3 and the capacitance value of the fourth capacitor C 4 Equal to the capacitance Ci; the capacitance of the first capacitor C 1 to the fourth capacitor C 4 can be set according to actual conditions, and the capacitance generally ranges from 5 pF to 900 F.
  • connection relationship of each device in the operational amplifier circuit of the embodiment of the present invention is specifically described:
  • the first switch K is connected to a first end of a voltage signal output from the one end and the other end of the fifth switch K 5, the operational amplifier 202 in the first sub-circuit capacitor C 1
  • One end of the second switch K 2 is connected to one end of the third capacitor C 3 in the operational amplifier circuit 202, the inverting input terminal of the operational amplifier A, and the other end of the first capacitor C 1 .
  • One end is connected to the other end of the third capacitor C 3 in the operational amplifier circuit 202 and the non-inverting output terminal of the operational amplifier A; one end of the third switch K 3 is connected to the output second voltage signal, and the other end is sixth.
  • One end of the switch K 6 and one end of the second capacitor C 2 in the operational amplifier circuit 202 are connected; one end of the fourth switch K 4 and one end of the fourth capacitor C 4 in the operational amplifier circuit 202
  • the non-inverting input terminal of the amplifier A is connected to the other end of the second capacitor C 2 , and the other end is connected to the other end of the fourth capacitor C 4 of the operational amplifier circuit 202 and the inverted output end of the operational amplifier A;
  • the other end of the five switch K 5 and the reference power supply Vsh An anode connection; the other end of the sixth switch K 6 is connected to a cathode of the reference power source Vsh;
  • one end of the first capacitor C 1 is connected to one end of the first switch K 1 and one end of the fifth switch K 5 in the control sub-circuit, and the other end is connected to the operational amplifier An inverting input terminal of A, one end of the third capacitor C 3 , one end of the second switch K 2 in the control sub-circuit 201; one end of the second capacitor C 2 and the third in the control sub-circuit 201
  • One end of the switch K 3 and one end of the sixth switch K 6 are connected, the other end is connected to the non-inverting input terminal of the operational amplifier A, one end of the fourth capacitor C 4 , and one end of the fourth switch K 4 in the control sub-circuit 201 Connecting; the other end of the third capacitor C 3 is connected to the non-inverting output of the operational amplifier A, the other end of the second switch K 2 in the control sub-circuit 201 ; the other end of the fourth capacitor C 4
  • the other end of the fourth switch K 4 of the control sub-circuit 202 is connected
  • the operation principle of the operational amplifier circuit is as follows:
  • the first switch K 1 to the fourth switch K 4 are first in a closed state, and the fifth switch K 5 and the sixth switch K 6 are in an off state, and the operational amplification sub-circuit 202 is controlled to operate in a signal sampling manner.
  • the phase signal samples by a first input voltage signal Vin p charging the first capacitor C 1, charges the second capacitor C 2 by the second input voltage signal Vin n, a first capacitor C 1 and the second
  • the second capacitor C 2 stores the amount of charge associated with the input, thereby completing sampling of the first voltage signal Vin p and the second voltage signal Vin n ;
  • the charge amount Q N1 of the N point of the operational amplifier A and the charge amount Q P1 of the P point are respectively:
  • Vin p is the first voltage signal
  • Vin n is the second voltage signal
  • V cm is the voltage between the input terminal and the output terminal of the operational amplifier A
  • C s is the first capacitor C 1 or the second capacitor C 2 Capacitance value.
  • the amplification sub-circuit 202 After the operational amplification sub-circuit 202 completes the signal sampling, the first switch K 1 to the fourth switch K 4 are in an off state, and the fifth switch K 5 and the sixth switch K 6 are in a closed state, and the operation is controlled.
  • the amplification sub-circuit 202 operates in a signal amplification phase to amplify the sampled first voltage signal and the second voltage signal;
  • the operational amplifier sub-circuit 202 when the operational amplifier sub-circuit 202 operates in the signal amplification stage, the voltages of the N point and the P point of the operational amplifier A are the same due to the virtual short-short characteristic of the operational amplifier A. Therefore, the N point and the P point are The voltage is set to V x , at which point the charge amount Q N2 at point N and the charge amount Q P2 at point P are:
  • Vsh + is the positive reference supply voltage
  • Vsh - is the negative reference supply voltage
  • V o + is the output voltage signal of the non-inverting output of operational amplifier A
  • V o - is the output voltage signal of the inverting output of operational amplifier A
  • C s is The capacitance value of the first capacitor C 1 or the second capacitor C 2
  • C i is a capacitance value of the third capacitor C 3 or the fourth capacitor C 4 .
  • the amplified difference voltage signal V o is obtained by subtracting the formula (5) and the formula (6):
  • V o + and V o - are related to the output range of the operational amplifier A, and cannot exceed the output range of the operational amplifier A.
  • the output range of the operational amplifier A is usually 0-1V; the ranges of Vsh + and Vsh - are related to the specific circuit. Generally, it is guaranteed to be smaller than the reference voltage V ref , and the difference voltage range of Vsh + and Vsh ⁇ is 5 mV-100 mV.
  • the amplification factor of the operational amplifier is a preset voltage amplification parameter C s /C i , where C s is the capacitance value of the first capacitor C 1 or the second capacitor C 2 , and C i is the third capacitor C 3 .
  • the capacitance value of the fourth capacitor C 4 the capacitance value of the first capacitor C 1 is equal to the capacitance value of the second capacitor C 2 , and the capacitance value of the third capacitor C 3 and the fourth capacitor C
  • the capacitance values of 4 are equal, and the capacitance values of the first capacitor C 1 to the fourth capacitor C 4 can be set according to actual conditions, and the value range is usually 5pF-900F; the adjustment is controlled by a preset voltage amplification parameter C s /C i
  • the voltage amplification factor of the operational amplifier A enables flexible amplification of the difference voltage signal.
  • an adjustment voltage can be introduced at the non-inverting output of the operational amplifier A, the adjustment voltage being a fixed level, which is a partial voltage obtained by voltage division of the reference voltage V ref independent of temperature.
  • the value is usually less than or equal to 40 mV; the amplified differential voltage signal is adjusted according to the adjusted voltage to obtain an adjusted difference voltage signal. Specifically, the amplified differential voltage signal is subtracted from the adjusted voltage to achieve a The function of shifting down is better adapted to the range of the subsequent analog-to-digital converter.
  • the embodiment of the present invention provides an operational amplification method.
  • the principle of solving the problem is similar to the circuit and the device. Therefore, the implementation process and implementation principles of the method can be referred to the implementation process of the foregoing circuit and device. And the description of the implementation principle, the repetition will not be repeated.
  • an operational amplification method provided by an embodiment of the present invention includes:
  • Step S401 When receiving the signal sampling instruction, completing sampling of the first voltage signal and the second voltage signal;
  • Step S402 According to the first voltage signal, the second voltage signal, the reference power voltage, The preset voltage amplification parameter obtains the amplified difference voltage signal.
  • the amplified difference voltage signal V o is obtained according to the following formula:
  • V o C*[(Vin p -Vin n )-(Vsh + -Vsh - )]
  • C is a preset voltage amplification parameter
  • Vin p is a first voltage signal
  • Vin n is a second voltage signal
  • Vsh + is a positive reference power supply voltage
  • Vsh ⁇ is a negative reference power supply voltage
  • the preset voltage amplification parameter C is C s /C i , where C s is the capacitance value of the first capacitor C 1 or the second capacitor C 2 in the operational amplifier circuit in the embodiment of the present invention, and C i is the first a capacitance value of the third capacitor C 3 or the fourth capacitor C 4 , the capacitance value of the first capacitor C 1 is equal to the capacitance value of the second capacitor C 2 , and the capacitance value of the third capacitor C 3 is The capacitance of the fourth capacitor C 4 is equal.
  • the value of the capacitor can be set according to the actual situation. Generally, the value of the capacitor ranges from 5pF to 900F.
  • the amplified difference voltage signal is subjected to translation adjustment according to the adjustment voltage to obtain an adjusted difference voltage signal.
  • the operational amplifier circuit shown in FIG. 2 or FIG. 3 can be applied to various devices or devices that need to perform signal amplification.
  • the embodiment of the present invention further provides a temperature sensor based on the operational amplifier circuit, wherein the temperature sensor includes at least the operational amplifier circuit, a specific composition structure and an implementation principle of the operational amplifier circuit, and The structure and principle described in Figures 2 and 3 are the same.
  • the amplifying circuit portion of the temperature sensor is used to amplify the difference voltage signal by using the operational amplifier circuit provided by the embodiment of the present invention, and the difference voltage signal is amplified by using only the operational amplifier in the prior art.
  • the embodiment of the invention adopts an operational amplifier circuit of a switched capacitor structure and controls the amplification factor of the operational amplifier by a preset voltage amplification parameter C s /C i , which can flexibly realize amplification of the difference voltage signal, thereby better utilizing the subsequent The range of the analog to digital converter.
  • the present invention also provides a computer storage medium having stored therein computer executable instructions for performing the aforementioned method of operational amplification.
  • embodiments of the present invention can be provided as a method, system, or computer program product. Accordingly, the present invention can take the form of a hardware embodiment, a software embodiment, or a combination of software and hardware. Moreover, the invention can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage and optical storage, etc.) including computer usable program code.
  • These computer program instructions can also be stored in a bootable computer or other programmable data processing
  • the apparatus is readable in a computer readable memory in a particular manner such that instructions stored in the computer readable memory produce an article of manufacture comprising instruction means implemented in one or more flows and/or block diagrams of the flowchart The function specified in the box or in multiple boxes.
  • These computer program instructions can also be loaded onto a computer or other programmable data processing device such that a series of operational steps are performed on a computer or other programmable device to produce computer-implemented processing for execution on a computer or other programmable device.
  • the instructions provide steps for implementing the functions specified in one or more of the flow or in a block or blocks of a flow diagram.

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Abstract

一种运算放大电路、运算放大方法、温度传感器以及计算机存储介质。该运算放大电路包括：控制子电路（201）、运算放大子电路（202）；其中，所述控制子电路（201），配置为接收到信号采样指令时，控制所述运算放大子电路（202）工作在信号采样阶段；并在所述运算放大子电路（202）完成信号采样后，控制所述运算放大电路工作在信号放大阶段；所述运算放大子电路（202），配置为工作在信号采样阶段时，完成第一电压信号（Vin p）及第二电压信号（Vin n）的采样；工作在信号放大阶段时，根据所述第一电压信号（Vin p）、第二电压信号（Vin n）、参考电源电压（Vsh +，Vsh -）、预设的电压放大参数得到放大后的差值电压信号。

Description

运算放大电路、方法及温度传感器、存储介质 技术领域
本发明涉及电路设计领域中的信号放大技术，尤其涉及一种运算放大电路、方法及温度传感器、计算机存储介质。
背景技术
温度传感器广泛应用于工业温度控制领域中的电脑(PC)、手机等终端设备，用于监测终端设备芯片内的工作温度以及对工作温度进行实时调节，以实现温度控制及节省功耗的功能。传统的温度传感器采用铂电阻、热敏阻及热电堆探测等技术实现，由于上述技术已发展得非常成熟，因此，传统的温度传感器的温度探测精度较高，通常可以达到0.1℃的温度探测精度；直到20世纪90年代，第一个基于互补金属氧化物半导体(CMOS，Complementary Metal Oxide Semiconductor)工艺的集成温度传感器被开发出来后，集成温度传感器替代了传统的温度传感器，被广泛地应用于工业温度控制领域中。
现有集成温度传感器的组成结构如图1所示，包括：两个面积比为N：1的三极管、运算放大器、模数转换器；由于三极管具有I-V(电流-电压)关系温度特性，因此，三极管最适合用于产生与温度成线性关系的电压，其中，当两个面积比为N：1的三极管流过同样大小的电流时，两个三极管产生不同的基极-发射极电压信号Vbe1和Vbe2，Vbe1和Vbe2的差值电压信号ΔVbe与温度具有较好的线性关系，ΔVbe＝lnN*K*T/q；其中，N为两个三极管发射区的面积比例，K为波尔兹曼常数，T为绝对温度，q为电位电荷量；通过监测差值电压ΔVbe就能测量出当前的温度值，后续通过一个与温度无关的参考电压Vref来对ΔVbe进行量度，并由所述运算放大器进行放大且由所述模数 转换器转换为数字信号输出；该参考电压Vref采用成熟的带隙基准电路来产生，带隙基准电路产生的参考电压Vref是一个与温度、工艺及电源电压呈弱相关的电压值，通常为1.2V；但该差值电压信号ΔVbe很小，通常电压范围为10mV-100mV，在低电压CMOS工艺的集成温度传感器中，如果直接简单地采用运算放大器放大该差值电压信号ΔVbe，那么，由于运算放大器的闭环放大倍数通常为10倍，经运算放大器放大后的差值电压信号仅可以利用后续模数转换器量程的50％左右，由此可见，现有的集成温度传感器的放大倍数较为固定，不能灵活地实现差值电压信号的放大，且不能较好地利用后续模数转换器的量程。
发明内容
为解决现有存在的技术问题，本发明实施例在于提供一种运算放大电路、方法及温度传感器、计算机存储介质，通过预设的电压放大参数控制调节运算放大器的放大倍数，从而能够灵活地实现差值电压信号的放大。
本发明实施例的技术方案是这样实现的：
本发明实施例提供了一种运算放大电路，该运算放大电路包括：控制子电路、运算放大子电路；其中，
所述控制子电路，配置为接收到信号采样指令时，控制所述运算放大子电路工作在信号采样阶段；并在所述运算放大子电路完成信号采样后，控制所述运算放大电路工作在信号放大阶段；
所述运算放大子电路，配置为工作在信号采样阶段时，完成第一电压信号及第二电压信号的采样；工作在信号放大阶段时，根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号。
上述方案中，所述控制子电路包括：第一开关至第六开关、参考电源；
所述运算放大子电路包括：第一电容至第四电容、运算放大器。
上述方案中，在所述控制电子路中，所述第一开关的一端连接输出的第一电压信号，另一端与第五开关的一端、所述运算放大子电路中第一电容的一端连接；所述第二开关的一端与所述运算放大子电路中第三电容的一端、运算放大器的反相输入端、第一电容的另一端连接，另一端与所述运算放大子电路中第三电容的另一端及运算放大器的同相输出端连接；所述第三开关的一端连接输出的第二电压信号，另一端与第六开关的一端、所述运算放大子电路中第二电容的一端连接；所述第四开关的一端与所述运算放大子电路中第四电容的一端、运算放大器的同相输入端、第二电容的另一端连接，另一端与所述运算放大子电路中第四电容的另一端及运算放大器的反相输出端连接；所述第五开关的另一端与所述参考电源的正极连接；所述第六开关的另一端与所述参考电源的负极连接；
在所述运算放大子电路中，所述第一电容的一端与所述控制子电路中第一开关的一端及第五开关的一端连接，另一端与所述运算放大器的反相输入端、第三电容的一端、所述控制子电路中第二开关的一端连接；所述第二电容的一端与所述控制子电路中第三开关的一端及第六开关的一端连接，另一端与所述运算放大器的同相输入端、第四电容的一端、所述控制子电路中第四开关的一端连接；所述第三电容的另一端与所述运算放大器的同相输出端、所述控制子电路中第二开关的另一端连接；所述第四电容的另一端与所述运算放大器的反相输出端、所述控制子电路中第四开关的另一端连接。
上述方案中，所述第一开关至第四开关处于闭合状态，且第五开关及第六开关处于断开状态时，控制所述运算放大子电路工作在信号采样阶段；
所述第一开关至第四开关处于断开状态，且第五开关及第六开关处于闭合状态时，控制所述运算放大子电路工作在信号放大阶段。
上述方案中，所述预设的电压放大参数为Cs/Ci，其中，Cs为第一电容 或第二电容的电容值，Ci为第三电容或第四电容的电容值，所述第一电容的电容值与所述第二电容的电容值相等，所述第三电容的电容值与所述第四电容的电容值相等。
根据上述运算放大电路，本发明实施例还提供了一种运算放大方法，该方法包括：
接收到信号采样指令时，完成第一电压信号及第二电压信号的采样；
根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号。
上述方案中，所述根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号，包括：
按照如下公式得到放大后的差值电压信号Vo：
Vo＝C*[(Vinp-Vinn)-(Vsh+-Vsh-)]
其中，C为预设的电压放大参数；Vinp为第一电压信号，Vinn为第二电压信号；Vsh+为正极参考电源电压，Vsh-为负极参考电源电压。
上述方案中，所述方法还包括：
根据调整电压对放大后的差值电压信号进行调整，得到调整后的差值电压信号。
根据上述运算放大电路，本发明实施例还提供了一种温度传感器，包括：上述的运算放大电路。
本发明还提供了一种计算机存储介质，所述计算机存储介质中存储有计算机可执行指令，所述计算机可执行指令用于执行前述的运算放大的方法。
本发明实施例所提供的运算放大电路、方法及温度传感器、计算机存储介质，接收到信号采样指令时，完成第一电压信号及第二电压信号的采样；根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压 放大参数得到放大后的差值电压信号；如此，本发明实施例通过预设的电压放大参数控制调节运算放大器的放大倍数，从而能够灵活地实现电压差值信号的放大。
附图说明
图1为本发明实施例现有技术中的温度传感器的组成结构示意图；
图2为本发明实施例运算放大电路的组成结构示意图；
图3为本发明实施例实际应用中运算放大电路的组成结构示意图；
图4为本发明实施例运算放大方法的实现流程示意图。
具体实施方式
本发明实施例中，接收到信号采样指令时，完成对前级电路输出的第一电压信号及第二电压信号的采样；根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号并恒定输出；如此，本发明实施例通过预设的电压放大参数控制调节运算放大器的放大倍数，从而能够灵活地对差值电压信号进行放大。
下面结合附图对本发明具体实施方式作进一步说明。
本发明实施例提出了一种运算放大电路，如图2所示，该运算放大电路包括：控制子电路201、运算放大子电路202；其中，
所述控制子电路201，配置为接收到信号采样指令时，控制所述运算放大子电路202工作在信号采样阶段；并在所述运算放大子电路202完成信号采样后，控制所述运算放大电路工作在信号放大阶段；
所述运算放大子电路202，配置为工作在信号采样阶段时，完成第一电压信号及第二电压信号的采样；工作在信号放大阶段时，根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后 的差值电压信号。
下面在实际应用中结合图3所示的运算放大电路分别对控制子电路201、运算放大子电路202的具体组成结构进行详细说明：
所述控制子电路201包括：第一开关K1至第六开关K6、参考电源Vsh；
所述运算放大子电路202包括：第一电容C1至第四电容C4、运算放大器A。
其中，所述第一开关K1至第六开关K6采用P沟道金属氧化物半导体(Positive channel Metal Oxide Semiconductor，PMOS)、N沟道金属氧化物半导体(Negative channel Metal Oxide Semiconductor，NMOS)、以及PNP型三极管、NPN型三极管等晶体管中的一种实现；且各个开关采用相同的晶体管实现。
其中，所述第一电容C1的电容值与所述第二电容C2的电容值相等、为电容Cs，所述第三电容C3的电容值与所述第四电容C4的电容值相等，为电容Ci；第一电容C1至第四电容C4的电容取值可以根据实际情况设置，通常电容的取值范围为5pF-900F。
在一个实施例中，结合图3所示，对本发明实施例运算放大电路中各器件的连接关系进行具体说明:
在所述控制子电路201中，所述第一开关K1的一端连接输出的第一电压信号，另一端与第五开关K5的一端、所述运算放大子电路202中第一电容C1的一端连接；所述第二开关K2的一端与所述运算放大子电路202中第三电容C3的一端、运算放大器A的反相输入端、第一电容C1的另一端连接，另一端与所述运算放大子电路202中第三电容C3的另一端及运算放大器A的同相输出端连接；所述第三开关K3的一端连接输出的第二电压信号，另一端与第六开关K6的一端、所述运算放大子电路202中第二电容C2的一端连接；所述第四开关K4的一端与所述运算放大子电路202中第四电容C4 的一端、运算放大器A的同相输入端、第二电容C2的另一端连接，另一端与所述运算放大子电路202中第四电容C4的另一端及运算放大器A的反相输出端连接；所述第五开关K5的另一端与所述参考电源Vsh的正极连接；所述第六开关K6的另一端与所述参考电源Vsh的负极连接；
在所述运算放大子电路202中，所述第一电容C1的一端与所述控制子电路中第一开关K1的一端及第五开关K5的一端连接，另一端与所述运算放大器A的反相输入端、第三电容C3的一端、所述控制子电路201中第二开关K2的一端连接；所述第二电容C2的一端与所述控制子电路201中第三开关K3的一端及第六开关K6的一端连接，另一端与所述运算放大器A的同相输入端、第四电容C4的一端、所述控制子电路201中第四开关K4的一端连接；所述第三电容C3的另一端与所述运算放大器A的同相输出端、所述控制子电路201中第二开关K2的另一端连接；所述第四电容C4的另一端与所述运算放大器A的反相输出端、所述控制子电路202中第四开关K4的另一端连接。
本发明实施例中，基于上述电路组成结构及器件间的连接关系，所述运算放大电路的工作原理是这样的：
本发明实施例首先使第一开关K1至第四开关K4处于闭合状态，且第五开关K5及第六开关K6处于断开状态，控制所述运算放大子电路202工作在信号采样阶段，该信号采样阶段中由输入的第一电压信号Vinp对第一电容C1进行充电，由输入的第二电压信号Vinn对第二电容C2进行充电，第一电容C1及第二电容C2保存了与输入相关的电荷量，由此，完成第一电压信号Vinp及第二电压信号Vinn的采样；
具体的，所述运算放大子电路202工作在信号采样阶段时，运算放大器A的N点的电荷量QN1及P点的电荷量QP1分别为：
QN1＝(Vinp-Vcm)*Cs       (1)
QP1＝(Vinn-Vcm)*Cs       (2)
其中，Vinp为第一电压信号，Vinn为第二电压信号；Vcm为运算放大器A的输入端与输出端之间的电压；Cs为第一电容C1或第二电容C2的电容值。
在所述运算放大子电路202完成信号采样后，使第一开关K1至第四开关K4处于断开状态，且第五开关K5及第六开关K6处于闭合状态，控制所述运算放大子电路202工作在信号放大阶段，对采样的第一电压信号及第二电压信号进行放大；
具体的，所述运算放大子电路202工作在信号放大阶段时，由于运算放大器A的虚短虚断特性，运算放大器A的N点及P点的电压相同，因此，将N点及P点的电压均设置为Vx，此时N点的电荷量QN2及P点的电荷量QP2分别为：
QN2＝(Vsh+-Vx)*Cs+(Vo +-Vx)*Ci         (3)
QP2＝(Vsh--Vx)*Cs+(Vo --Vx)*Ci        (4)
其中，Vsh+为正极参考电源电压，Vsh-为负极参考电源电压，Vo +为运算放大器A同相输出端的输出电压信号，Vo -为运算放大器A反相输出端的输出电压信号，Cs为第一电容C1或第二电容C2的电容值，Ci为第三电容C3或第四电容C4的电容值。
由于运算放大器A的N点和P点没有电荷通路，因此，从信号采样阶段切换到信号放大阶段，运算放大器A的N点和P点的电荷量不变，即：QN1＝QN2，QP1＝QP2，从而得到：
(Vsh+-Vx)*Cs+(Vo +-Vx)*Ci＝(Vinp-Vcm)*Cs      (5)
(Vsh--Vx)*Cs+(Vo --Vx)*Ci＝(Vinn-Vcm)*Cs      (6)
由公式(5)及公式(6)相减得到放大后的差值电压信号Vo：
Vo＝(Vo +-Vo -)＝Cs/Ci*[(Vinp-Vinn)-(Vsh+-Vsh-)]
这里，Vo +及Vo -与运算放大器A输出范围有关，不能超过运算放大器A的输出范围，运算放大器A的输出范围通常为0-1V；Vsh+及Vsh-的范围与具体电路有关，一般保证小于参考电压Vref，且Vsh+及Vsh-的差值电压范围为5mV-100mV。
由此可见，运算放大器的放大倍数为预设的电压放大参数Cs/Ci，其中，Cs为第一电容C1或第二电容C2的电容值，Ci为第三电容C3或第四电容C4的电容值，所述第一电容C1的电容值与所述第二电容C2的电容值相等，所述第三电容C3的电容值与所述第四电容C4的电容值相等，第一电容C1至第四电容C4的电容值可以根据实际情况设置，通常取值范围为5pF-900F；通过预设的电压放大参数Cs/Ci来控制调节运算放大器A的电压放大倍数，从而能够灵活地实现差值电压信号的放大。
在一个实施例中，可以在运算放大器A的同相输出端引入一个调整电压，该调整电压为固定电平，该固定电平是与温度无关的参考电压Vref通过电阻分压而得到的分压值，通常小于等于40mV；根据该调整电压对放大后的差值电压信号进行调整，得到调整后的差值电压信号，具体的，将放大后的差值电压信号减去该调整电压，实现向下移位的功能，以较好地适应后续模数转换器的量程。
基于相同的技术构思，本发明实施例提供了一种运算放大方法，由于该方法解决问题的原理与电路、装置相似，因此，方法的实施过程及实施原理均可以参见前述电路、装置的实施过程及实施原理描述，重复之处不再赘述。
如图4所示，本发明实施例提供的运算放大方法，该方法包括：
步骤S401：接收到信号采样指令时，完成第一电压信号及第二电压信号的采样；
步骤S402：根据所述第一电压信号、第二电压信号、参考电源电压、 预设的电压放大参数得到放大后的差值电压信号。
具体的，按照如下公式得到放大后的差值电压信号Vo：
Vo＝C*[(Vinp-Vinn)-(Vsh+-Vsh-)]
其中，C为预设的电压放大参数；Vinp为第一电压信号，Vinn为第二电压信号；Vsh+为正极参考电源电压，Vsh-为负极参考电源电压。
这里，预设的电压放大参数C为Cs/Ci，其中，Cs为本发明实施例中运算放大电路中的第一电容C1或第二电容C2的电容值，Ci为第三电容C3或第四电容C4的电容值，所述第一电容C1的电容值与所述第二电容C2的电容值相等，所述第三电容C3的电容值与所述第四电容C4的电容值相等。
这里，电容取值可以根据实际情况设置，通常电容的取值范围为5pF-900F。
在一个实施例中，根据调整电压对放大后的差值电压信号进行平移调整，得到调整后的差值电压信号。
本发明实施例中，图2或图3所示的运算放大电路，可应用于各种需要进行信号放大的装置或设备中。
基于上述运算放大电路，本发明实施例还提供了一种基于上述运算放大电路所实现温度传感器，所述温度传感器至少包括上述运算放大电路，所述运算放大电路的具体组成结构以及实现原理，与图2、图3所述结构及原理相同。
本发明实施例中，在温度传感器中的放大电路部分采用本发明实施例提供的运算放大电路对差值电压信号进行放大，相对于现有技术中仅采用运算放大器对差值电压信号进行放大，本发明实施例采用开关电容结构的运算放大电路并通过预设的电压放大参数Cs/Ci控制调节运算放大器的放大倍数，能够灵活地实现差值电压信号的放大，从而更好地利用后续模数转换器的量程。
本发明还提供了一种计算机存储介质，所述计算机存储介质中存储有计算机可执行指令，所述计算机可执行指令用于执行前述的运算放大的方法。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。
本领域内的技术人员应明白，本发明的实施例可提供为方法、系统、或计算机程序产品。因此，本发明可采用硬件实施例、软件实施例、或结合软件和硬件方面的实施例的形式。而且，本发明可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器和光学存储器等)上实施的计算机程序产品的形式。
本发明是参照根据本发明实施例的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理 设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
以上所述，仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。

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  1. 一种运算放大电路，所述运算放大电路包括：控制子电路、运算放大子电路；其中，
    所述控制子电路，配置为接收到信号采样指令时，控制所述运算放大子电路工作在信号采样阶段；并在所述运算放大子电路完成信号采样后，控制所述运算放大电路工作在信号放大阶段；
    所述运算放大子电路，配置为工作在信号采样阶段时，完成第一电压信号及第二电压信号的采样；工作在信号放大阶段时，根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号。
  2. 根据权利要求1所述的运算放大电路，其中，所述控制子电路包括：第一开关至第六开关、参考电源；
    所述运算放大子电路包括：第一电容至第四电容、运算放大器。
  3. 根据权利要求2所述的运算放大电路，其中，
    在所述控制电子路中，所述第一开关的一端连接输出的第一电压信号，另一端与第五开关的一端、所述运算放大子电路中第一电容的一端连接；所述第二开关的一端与所述运算放大子电路中第三电容的一端、运算放大器的反相输入端、第一电容的另一端连接，另一端与所述运算放大子电路中第三电容的另一端及运算放大器的同相输出端连接；所述第三开关的一端连接输出的第二电压信号，另一端与第六开关的一端、所述运算放大子电路中第二电容的一端连接；所述第四开关的一端与所述运算放大子电路中第四电容的一端、运算放大器的同相输入端、第二电容的另一端连接，另一端与所述运算放大子电路中第四电容的另一端及运算放大器的反相输出端连接；所述第五开关的另一端与所述参考电源的正极连接；所述第六 开关的另一端与所述参考电源的负极连接；
    在所述运算放大子电路中，所述第一电容的一端与所述控制子电路中第一开关的一端及第五开关的一端连接，另一端与所述运算放大器的反相输入端、第三电容的一端、所述控制子电路中第二开关的一端连接；所述第二电容的一端与所述控制子电路中第三开关的一端及第六开关的一端连接，另一端与所述运算放大器的同相输入端、第四电容的一端、所述控制子电路中第四开关的一端连接；所述第三电容的另一端与所述运算放大器的同相输出端、所述控制子电路中第二开关的另一端连接；所述第四电容的另一端与所述运算放大器的反相输出端、所述控制子电路中第四开关的另一端连接。
  4. 根据权利要求2或3所述的运算放大电路，其中，
    所述第一开关至第四开关处于闭合状态，且第五开关及第六开关处于断开状态时，控制所述运算放大子电路工作在信号采样阶段；
    所述第一开关至第四开关处于断开状态，且第五开关及第六开关处于闭合状态时，控制所述运算放大子电路工作在信号放大阶段。
  5. 根据权利要求2或3所述的运算放大电路，其中，
    所述预设的电压放大参数为Cs/Ci，其中，Cs为第一电容或第二电容的电容值，Ci为第三电容或第四电容的电容值，所述第一电容的电容值与所述第二电容的电容值相等，所述第三电容的电容值与所述第四电容的电容值相等。
  6. 一种运算放大方法，所述方法包括：
    接收到信号采样指令时，完成第一电压信号及第二电压信号的采样；
    根据所述第一电压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号。
  7. 根据权利要求6所述的运算放大方法，其中，所述根据所述第一电 压信号、第二电压信号、参考电源电压、预设的电压放大参数得到放大后的差值电压信号，包括：
    按照如下公式得到放大后的差值电压信号Vo：
    Vo＝C*[(Vinp-Vinn)-(Vsh+-Vsh-)]
    其中，C为预设的电压放大参数；Vinp为第一电压信号，Vinn为第二电压信号；Vsh+为正极参考电源电压，Vsh-为负极参考电源电压。
  8. 根据权利要求6或7所述的运算放大方法，其中，所述方法还包括：
    根据调整电压对放大后的差值电压信号进行调整，得到调整后的差值电压信号。
  9. 一种温度传感器，包括：权利要求1至5任一项所述的运算放大电路。
  10. 一种计算机存储介质，所述计算机存储介质中存储有计算机可执行指令，所述计算机可执行指令用于执行权利要求6至8任一项所述的运算放大方法。
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