WO2016095445A1 - Low-voltage power generation circuit, method and integrated circuit - Google Patents

Low-voltage power generation circuit, method and integrated circuit Download PDF

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Publication number
WO2016095445A1
WO2016095445A1 PCT/CN2015/080291 CN2015080291W WO2016095445A1 WO 2016095445 A1 WO2016095445 A1 WO 2016095445A1 CN 2015080291 W CN2015080291 W CN 2015080291W WO 2016095445 A1 WO2016095445 A1 WO 2016095445A1
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circuit
voltage
low voltage
startup
low
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PCT/CN2015/080291
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French (fr)
Chinese (zh)
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崔海良
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深圳市中兴微电子技术有限公司
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Publication of WO2016095445A1 publication Critical patent/WO2016095445A1/en

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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices

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  • the present invention relates to the field of power management, and in particular, to a low voltage power generation circuit, method, and integrated circuit (IC).
  • the system usually requires the input voltage range of the chip to vary from a few volts to tens of volts, which requires the chip to work properly.
  • the general power solution is to divide the internal circuit into high-voltage circuit modules and low-voltage circuit modules; among them, the sub-circuits that interface with the input power supply are usually classified as high-voltage circuit modules, and the internal reference, clock, etc.
  • the sub-circuit is classified as a low-voltage circuit module, which can maximize the chip area and reduce the design difficulty of the chip.
  • the power supply of the internal high-voltage circuit module is directly provided by an external power supply, while the power supply of the low-voltage circuit module needs to be generated in the chip, and a constant low-voltage power supply is generated by the external power supply to supply power to the internal low-voltage circuit.
  • the external power supply of a high-voltage power supply IC has a relatively large range of variation, generally ranging from 5 volts to tens of volts.
  • the power supply of the low-voltage circuit is generally required to be relatively stable, so it is necessary to convert the high-voltage power supply to obtain a stable and reliable low-voltage power supply.
  • the current technical solution is to directly convert the high-voltage power supply to obtain a low-voltage power supply.
  • this type of scheme can convert the high-voltage power supply into a low-voltage power supply, the generated low-voltage power supply is not stable enough and will change with the change of the load current; It also depends on the characteristics of the device, such as the regulation voltage of the Zener diode and the threshold of the N-tube, etc., and the output is not accurate, so it cannot be applied to a power chip with higher requirements.
  • a circuit as shown in FIG. 1 which uses a low dropout regulator (LDO) structure to obtain a stable low voltage power supply, but the power
  • the circuit needs to use a high voltage depletion NMOS, which greatly increases the cost of the circuit; moreover, the circuit also needs the reference circuit of the LDO circuit and other auxiliary circuits, but the solution does not clearly explain how to solve the generated reference and the resulting low voltage power supply interdependent. problem.
  • LDO low dropout regulator
  • embodiments of the present invention provide a low-voltage power generation circuit, method, and IC.
  • Embodiments of the present invention provide a low voltage power generation circuit including: a high voltage LDO circuit, a startup circuit, and a low voltage bandgap reference circuit;
  • the startup circuit is configured to provide power to the low voltage bandgap reference circuit during a startup phase of the low voltage power generation circuit
  • the low voltage bandgap reference circuit is configured to output a corresponding reference voltage to the high voltage LDO circuit by using a power supply provided by the startup circuit to enable the high voltage LDO circuit to start normally.
  • the startup circuit is configured to: when determining that the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself, providing power to the low voltage bandgap reference circuit.
  • the startup circuit is further configured to stop supplying power to the low voltage bandgap reference circuit after the high voltage LDO circuit operates normally;
  • the high voltage LDO circuit is configured to provide power to the low voltage bandgap reference circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
  • the startup circuit is configured to stop supplying power to the low voltage bandgap reference circuit when determining that the voltage output by the high voltage LDO circuit is greater than or equal to the voltage output by the startup circuit itself.
  • the high voltage LDO circuit includes: an amplifier, a first PMOS, a first resistor, a second resistor, and a third resistor;
  • the startup circuit includes: a first NMOS, a second NMOS, a third, a fourth NMOS, a second PMOS, a third PMOS, a fourth PMOS, and a fourth resistor And Zener diodes.
  • the negative input end of the amplifier is connected to the output end of the low voltage bandgap reference circuit, and the positive input end is connected to one end of the first resistor and one end of the second resistor, and the output end of the amplifier is connected.
  • Connecting a gate of the first PMOS a source of the first PMOS is connected to the input high voltage power supply, a drain is connected to the other end of the first resistor, a drain of the fourth PMOS in the startup circuit, and the low voltage bandgap reference circuit
  • the other end of the second resistor is connected to one end of the third resistor and the gate of the fourth NMOS NM4 in the starting circuit; the other end of the third resistor is grounded;
  • one end of the fourth resistor is connected to the input high voltage power supply, the other end is connected to the gate and drain of the first NMOS, the gate of the second NMOS, and the gate of the third NMOS, the source of the first NMOS Grounding; the source of the second NMOS is grounded, the drain of the second NMOS is connected to the source of the fourth NMOS; the source of the third NMOS is grounded, and the drain of the third NMOS is connected to the drain of the third PMOS, the Zener diode a positive electrode and a gate of the second PMOS; a drain of the fourth NMOS is connected to the gate of the third PMOS, and a gate and a drain of the fourth PMOS; a source of the second PMOS is connected to the input high voltage power supply; The negative electrode is connected to the input high voltage power supply; the third PMOS source is connected to the input high voltage power supply; and the fourth PMOS source is connected to the input high voltage power supply.
  • a first capacitor is further connected between the drain of the first PMOS and the ground; and a second capacitor is further connected between the drain of the first PMOS and one end of the third resistor.
  • Embodiments of the present invention also provide an integrated circuit including the above-described low voltage power generating circuit.
  • the embodiment of the invention further provides a method for generating a low voltage power supply, comprising:
  • a startup circuit of the low voltage power generating circuit supplies power to a low voltage bandgap reference circuit of the low voltage power generating circuit during a startup phase of the low voltage power generating circuit;
  • the low voltage bandgap reference circuit outputs a corresponding reference voltage to the high voltage LDO circuit of the low voltage power generating circuit by using a power supply provided by the starting circuit to enable the high voltage LDO circuit to start normally.
  • the starting circuit of the low-voltage power generating circuit supplies power to the low-voltage bandgap reference circuit of the low-voltage power generating circuit, which is:
  • the startup circuit determines that the low voltage bandgap reference circuit supplies power when the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself.
  • the method further includes:
  • the startup circuit stops supplying power to the low voltage bandgap reference circuit
  • the low voltage bandgap reference circuit is powered by the high voltage LDO circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
  • the startup circuit stops supplying power to the low voltage bandgap reference circuit, which is:
  • the startup circuit stops supplying power to the low voltage bandgap reference circuit.
  • the low-voltage power generation circuit, method and IC provided by the embodiments of the present invention provide a power supply for the low-voltage bandgap reference circuit during the startup phase of the chip; at this time, the low-voltage bandgap reference circuit utilizes the power supply provided by the startup circuit.
  • the corresponding reference voltage is output to the high voltage LDO circuit to enable the high voltage LDO circuit to start normally, thus effectively solving the problem that the generated reference and the generated low voltage power supply are interdependent.
  • FIG. 1 is a schematic structural diagram of a low voltage power generating circuit in the related art
  • FIG. 2 is a schematic structural diagram of a second low voltage power generating circuit in the related art
  • FIG. 3 is a schematic structural diagram of a third low voltage power generating circuit in the related art
  • FIG. 4 is a schematic structural diagram of a fourth low voltage power generating circuit in the related art
  • FIG. 5 is a schematic structural diagram of a low voltage power generation circuit according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a specific low-voltage power generating circuit according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram showing the working process of the circuit shown in FIG. 6 according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram showing an output curve of voltages of various stages in FIG. 6 according to an embodiment of the present invention.
  • FIG. 9 is a schematic flowchart of a method for generating a low voltage power supply according to an embodiment of the present invention.
  • the implementation method of converting a high-voltage power source into a low-voltage power source is generally a direct conversion of a high-voltage power source to obtain a low-voltage power source, as shown in Figures 2, 3, and 4, although such a scheme can convert a high-voltage power source into a low-voltage power source, but
  • the generated low-voltage power supply is not stable enough and will change with the load current.
  • the output depends on the characteristics of the device, such as the voltage regulation value of the Zener diode and the threshold of the N-tube. The output is not accurate, so it cannot be applied to the requirements. High power class chips. Specifically, the circuit shown in FIG.
  • a circuit for obtaining a stable low-voltage power supply using an LDO structure is proposed, as shown in FIG. 1, but the circuit needs to use a high-voltage depletion NMOS, and the high-voltage depletion NMOS requires process support, so that the cost of the circuit is greatly increased.
  • the low-voltage power generation circuit requires a bandgap reference circuit to generate the corresponding reference voltage, and the bandgap reference circuit requires a low-voltage power supply, which forms a loop that needs to be broken to make the chip normal.
  • the startup circuit supplies power to the low voltage bandgap reference circuit during the chip startup phase; at this time, the low voltage bandgap reference circuit utilizes the power provided by the startup circuit to the high voltage
  • the LDO circuit outputs a corresponding reference voltage to cause the high voltage LDO circuit to start normally.
  • the low-voltage power generating circuit provided by the embodiment of the present invention, as shown in FIG. 5, includes: a high-voltage LDO circuit 51, a starting circuit 52, and a low-voltage bandgap reference circuit 53;
  • the startup circuit 52 is configured to supply power to the low voltage bandgap reference circuit 53 during a startup phase of a chip, that is, a low voltage power generation circuit;
  • the low voltage bandgap reference circuit 53 is configured to output a corresponding reference voltage to the high voltage LDO circuit 51 by the power supply provided by the startup circuit 52 to cause the high voltage LDO circuit 51 to start normally.
  • the high voltage LDO circuit 51 can output a corresponding voltage, but the output voltage value is less than the set voltage value.
  • the startup circuit 52 is specifically configured to provide power to the low voltage bandgap reference circuit 53 when the voltage output by the high voltage LDO circuit 51 is less than the voltage output by the startup circuit 52 itself.
  • the startup circuit 52 is further configured to stop supplying power to the low voltage bandgap reference circuit 53 after the high voltage LDO circuit 51 operates normally;
  • the high voltage LDO circuit 51 is configured to provide power to the low voltage bandgap reference circuit 53 when the startup circuit 52 stops supplying power to the low voltage bandgap reference circuit 53. source.
  • the startup circuit 52 is specifically configured to stop supplying power to the low voltage bandgap reference circuit 53 when determining that the voltage output by the high voltage LDO circuit 51 is greater than or equal to the voltage output by itself.
  • the high voltage LDO circuit 51 can provide a stable low voltage power supply for the low voltage bandgap reference circuit 53, and other sub-circuits in the chip, such as a bias module, an oscillator, and the like.
  • the low-voltage power generating circuit provided by the embodiment of the present invention provides power to the low-voltage bandgap reference circuit 53 during the chip startup phase; at this time, the low-voltage bandgap reference circuit 53 utilizes the starting circuit 52.
  • the supplied power source outputs a corresponding reference voltage to the high voltage LDO circuit 51 to cause the high voltage LDO circuit 51 to be normally started.
  • the high voltage LDO circuit 51 may include an amplifier EA, a first PMOS PM1, a first resistor R1, a second resistor R2, and a third resistor R3, and a first resistor R1.
  • the two resistors R2 and the third resistor R3 form a resistance feedback network;
  • the startup circuit 52 may include: a first NMOS NM1, a second NMOS NM2, a third NMOS NM3, a fourth NMOS NM4, a second PMOS PM2, and a third PMOS PM3
  • connection relationship of the circuit shown in Figure 6 is:
  • the first resistor R1, the second resistor R2 and the third resistor R3 form a resistance feedback network, and the negative input terminal of the amplifier EA is connected to the output terminal of the low voltage bandgap reference circuit 53, that is, the negative input.
  • the terminal receives the reference voltage V BG
  • the positive input terminal is connected to one end of the first resistor R1 and one end of the second resistor R2 , that is, the positive input terminal receives the feedback signal vfb of the resistance feedback network
  • the output end of the amplifier EA is connected to the first PMOS PM1 a gate of the first PMOS PM1 connected to the input high voltage power supply VDD, a drain connected to the other end of the first resistor R1, a drain of the fourth PMOS PM3 in the startup circuit 52, and the low voltage bandgap reference circuit
  • the other end of the second resistor R2 is connected to one end of the third resistor R3 and the gate of the fourth NMOS NM4 in the starting circuit 52, that is, the gate of the fourth NMOS NM4 receives the voltage of the resistance feedback network.
  • the signal vg is judged; the other end of the third resistor is grounded.
  • the first PMOS PM1 since the source of the first PMOS PM1 is connected to the input high voltage power supply VDD, it is necessary to use a high voltage resistant high voltage device to avoid the device being burned out; the first PMOS PM1 may be a P-type high voltage DEMOS device, which is the high voltage LDO circuit. 51 power tube. The drain of the first PMOS PM1 outputs a low voltage power supply VOUT.
  • the function of the high voltage LDO is to use the ratio of the resistance feedback and the adjustment of the amplifier EA to stabilize the output of the low voltage power supply VOUT at the set value.
  • one end of the fourth resistor R4 is connected to the input high voltage power supply VDD, and the other end is connected to the gate and drain of the first NMOS NM1, the gate of the second NMOS NM2, and the gate of the third NMOS NM3.
  • the source of the first NMOS NM1 is grounded; the source of the second NMOS NM2 is grounded, the drain of the second NMOS NM2 is connected to the source of the fourth NMOS NM4; the source of the third NMOS NM3 is grounded, and the drain of the third NMOS NM3 Connecting the drain of the third PMOS PM3, the anode of the Zener diode D1, and the gate of the second PMOS PM2; the drain of the fourth NMOS NM4 is connected to the gate of the third PMOS PM3, and the gate of the fourth PMOS PM4 and
  • the source of the second PMOS PM2 is connected to the input high voltage power supply VDD; the negative terminal of the Zener diode D1 is connected to the input high voltage power supply VDD; the source of the third PMOS PM3 is connected to the input high voltage power supply VDD; and the source of the fourth PMOS PM4 is connected to the input High voltage power supply VDD.
  • the drain of the second PMOS PM2 outputs a low voltage power supply VOUT.
  • the low voltage module and the low voltage bandgap reference circuit 53 are powered by the low voltage power supply VOUT, and the fourth resistor R4, the first NMOS NM1, the second NMOS NM2, and the third NMOS NM3 form a bias circuit for supplying current to each branch;
  • the four NMOS NM4 is a switching transistor.
  • the source of the third PMOS and the fourth PMOS PM4 is connected to the high voltage power supply VDD, it is necessary to use a high voltage device that is resistant to high voltage, thereby preventing the device from being burnt out; similarly, the first NMOS NM1, the second NMOS NM2, and the third NMOS NM3 as well as The drain of the fourth NMOS NM4 is connected to the high voltage power supply VDD. Therefore, a high voltage high voltage resistant device is also required; the third PMOS PM3 and the fourth PMOS PM4 may be P-type high voltage DEMOS devices, the first NMOS NM1 and the second NMOS NM2. The third NMOS NM3 and the fourth NMOS NM4 may be N-type high voltage DEMOS devices.
  • a first capacitor C0 is further connected between the drain of the first PMOS PM1 and the ground, and functions as a filter capacitor; and is further connected between the drain of the first PMOS PM1 and one end of the third resistor R3.
  • a second capacitor C1 which acts to compensate for the capacitance.
  • the low voltage bandgap reference circuit 53 provides a required reference voltage for the LDO circuit 51 and other sub-circuits inside the chip; the internal module may be a sub-circuit requiring a low voltage power supply such as a bias module or an oscillator. .
  • a node formed by the positive electrode of the Zener diode D1, the drain of the third PMOS PM3, and the drain of the third NMOS MM3 is referred to as A; the gate of the third PMOS PM3, the fourth PMOS PM4 The node formed by the gate and drain and the drain of the fourth NMOS NM4 is referred to as B.
  • Step 701 After the chip is powered on, the startup circuit 52 operates.
  • V BG 0.
  • the startup circuit 52 supplies power to the first low-voltage bandgap reference circuit 53 of the subsequent stage to open the sub-circuit, thereby causing the low-voltage bandgap reference circuit 53 to output normally.
  • the working principle of the starting circuit 52 is: in the startup phase, the voltage of the input high voltage power supply VDD starts to rise, and the voltage V OUT of the low voltage power supply VOUT is initially 0.
  • V OUT satisfies the condition of the formula (1)
  • the fourth NMOS NM4 is not turned on, the current flowing through the second NMOS NM2, the fourth NMOS NM4, and the fourth PMOS PM4 branch is 0, and the potential at point B is the voltage V DD of the input high voltage power supply VDD, and thus the potential at point A is
  • the third NMOS NM3 is pulled to the ground potential.
  • the withstand voltage of the high-voltage DEMOS device is at the source and drain terminals, and the withstand voltage requirement of the source gate terminal is less than 5V. If the V DD is higher than 5V at this time, the A point is pulled by the third NMOS NM3.
  • the second PMOS PM2 will be burned out, so the Zener diode D1 is added here, and the Zener diode D1 acts as a clamp tube, so that the source gate voltage of the second PMOS PM2 is clamped within 5V.
  • the potential at point A is low, causing the second PMOS PM2 to be turned on, and the output voltage V OUT is pulled up, which corresponds to the T1 phase in FIG.
  • R 1 represents the resistance of the first resistor R1
  • R 2 represents the resistance of the second resistor R2
  • R 3 represents the resistance of the third resistor R3
  • V THNM4 represents the threshold voltage of the fourth NMOS NM4.
  • the fourth NMOS NM4 is turned on. At this time, the second NMOS NM2, the fourth NMOS NM4, and the fourth PMOS PM4 have a current flowing, and the third PMOS PM3 mirrors the fourth PMOS PM4 current to pull up the potential of the A point, thereby adjusting the first The degree of opening of the second PMOS PM2, thereby maintaining V OUT at the set starting value; that is, the output voltage satisfies the formula (3); the process corresponds to the T2 phase in FIG.
  • Steps 702-703 The startup circuit 52 supplies power to the low-voltage bandgap reference circuit 53 to operate the low-voltage bandgap reference circuit 53; and the low-voltage bandgap reference circuit 53 outputs a reference to the high-voltage LDO voltage 51 a voltage such that the high voltage LDO voltage 51 begins to operate;
  • the startup circuit 52 is activated, maintaining V OUT at a set startup value, that is, the output voltage satisfies the formula (3), and the output voltage is supplied to the low-voltage bandgap reference circuit 53 such that the low-voltage band
  • the gap reference circuit 53 is activated, thereby causing V BG to gradually rise.
  • the output voltage corresponding to the high voltage LDO is lower than the output voltage maintained by the startup circuit, that is,
  • Step 704 the high voltage LDO circuit 51 operates normally, supplies power to the low voltage bandgap reference circuit 53, and the startup circuit 52 is turned off.
  • This voltage causes the fourth NMOS NM4 to be fully turned on, and the drain terminal of the third PMOS PM3, that is, the potential of point A, is pulled to V DD , thereby causing the second PMOS PM2 of the startup circuit 52 to be turned off.
  • the output voltage V OUT It is completely determined by the high voltage LDO circuit 51, which corresponds to the T4 stage in FIG.
  • the voltage outputted by the high-voltage LDO circuit, that is, V OUT is stabilized at a set value, that is,
  • V BG is stable, that is, fixed
  • the output of the high-voltage LDO circuit that is, V OUT is a stable value
  • the output serves as a power source for the subsequent stage circuit, so that the low-voltage band of the subsequent stage
  • the gap reference circuit 53 and other low voltage circuits operate stably, and the process corresponds to the T5 stage in FIG.
  • the low-voltage power generation circuit requires a reference voltage
  • the low-voltage bandgap reference circuit that supplies the reference voltage requires a low-voltage power supply, which forms a loop.
  • the low voltage power generating circuit provided by the embodiment of the present invention is required to break the loop to make the chip normal.
  • the low-voltage bandgap reference circuit supplies power to the low-voltage bandgap reference circuit to output the reference voltage, thereby making the high-voltage LDO normal; then the startup circuit turns itself off when the circuit is stable.
  • the low voltage power supply generated by the technical solution of the embodiment of the invention is stable. Because the high voltage LDO circuit is adopted, the output voltage precision is high, so the change and the ripple of the input high voltage power supply can be isolated, and the power management chip with high performance requirements can be used. Reduce the design specifications and difficulty of the Power Supply Rejection Ratio (PSRR) of other low-voltage circuits.
  • PSRR Power Supply Rejection Ratio
  • the power consumption of the startup circuit can be adjusted according to the resistance value of the fourth resistor R4, that is, the power consumption is controllable, and the current of each branch can be adjusted to adapt to the startup speed of different input power sources.
  • the power consumption of the startup circuit it can be determined in conjunction with the startup speed of the power source.
  • the circuit provided by the embodiment of the invention has a simple structure, a small chip area, and the devices used are conventional devices, and the unnecessary mask layer is not added, thereby reducing the overall cost of the chip.
  • Embodiments of the present invention also provide an IC including the low voltage power generating circuit described above.
  • the integrated circuit can be any analog device that requires a low voltage power supply, such as a charger, a DC power generation module, and the like.
  • the embodiment of the present invention further provides a low-voltage power generating method. As shown in FIG. 9, the method includes the following steps:
  • Step 901 In a startup phase of the chip, that is, the low-voltage power generating circuit, the starting circuit of the low-voltage power generating circuit supplies power to the low-voltage bandgap reference circuit of the low-voltage power generating circuit;
  • the startup circuit determines that the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself, and supplies power to the low voltage bandgap reference circuit.
  • Step 902 The low voltage bandgap reference circuit outputs a corresponding reference voltage to the high voltage LDO circuit of the low voltage power generating circuit by using the power supply provided by the starting circuit to enable the high voltage LDO circuit to start normally.
  • the high voltage LDO circuit can output a corresponding voltage, but the output voltage value is less than the set voltage value.
  • the method can also include:
  • the startup circuit stops supplying power to the low voltage bandgap reference circuit
  • the low voltage bandgap reference circuit is powered by the high voltage LDO circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
  • the startup circuit stops supplying power to the low voltage bandgap reference circuit, specifically:
  • the startup circuit stops supplying power to the low voltage bandgap reference circuit.
  • the high voltage LDO circuit can provide a stable low voltage power supply for the low voltage bandgap reference circuit and other sub-circuits in the chip, such as a bias module, an oscillator, and the like.
  • the low-voltage power supply method provided by the embodiment of the present invention provides a power supply for the low-voltage bandgap reference circuit during the startup phase of the chip; at this time, the low-voltage bandgap reference circuit uses the power supply provided by the startup circuit to the high-voltage LDO circuit
  • the corresponding reference voltage is output to enable the high voltage LDO circuit to start normally, and thus, the problem that the generated reference and the generated low voltage power supply are interdependent can be effectively solved.

Abstract

A low-voltage power generation circuit comprises a high voltage low-dropout linear regulator LDO circuit (51), a start-up circuit (52) and a low-voltage band gap reference circuit (53). In the start-up stage of the low-voltage power generation circuit, the start-up circuit (52) provides the power supply to the low voltage band gap reference circuit (53). The low voltage band gap reference circuit (53) outputs the corresponding reference voltage to the high voltage LDO circuit (51) by use of the power supply provided by the start-up circuit (52), so as to make the high voltage LDO circuit (51) normally start up. An integrated circuit and a low-voltage power generation method are also disclosed.

Description

一种低压电源产生电路、方法及集成电路Low-voltage power generation circuit, method and integrated circuit 技术领域Technical field
本发明涉及电源管理领域,尤其涉及一种低压电源产生电路、方法及集成电路(IC,Integrated Circuit)。The present invention relates to the field of power management, and in particular, to a low voltage power generation circuit, method, and integrated circuit (IC).
背景技术Background technique
对于电源管理类IC,系统通常要求芯片的输入电压范围可以在几伏到几十伏的范围内变化,此时要求芯片可以正常工作。针对高压的电源管理芯片,一般的电源解决方案是将内部电路分为高压电路模块和低压电路模块;其中,和输入电源做接口的子电路通常归为高压电路模块,而内部的基准、时钟等子电路则归为低压电路模块,这样可以最大程度地节约芯片的面积,减少芯片的设计难度。For power management ICs, the system usually requires the input voltage range of the chip to vary from a few volts to tens of volts, which requires the chip to work properly. For high-voltage power management chips, the general power solution is to divide the internal circuit into high-voltage circuit modules and low-voltage circuit modules; among them, the sub-circuits that interface with the input power supply are usually classified as high-voltage circuit modules, and the internal reference, clock, etc. The sub-circuit is classified as a low-voltage circuit module, which can maximize the chip area and reduce the design difficulty of the chip.
高压电源供电的IC,其内部高压电路模块的电源直接使用外接电源提供,而低压电路模块的电源则需要在芯片内产生,由外接电源产生一个恒定的低压电源给内部低压电路供电。高压电源供电的IC的外接电源变化范围比较大,一般在5伏到几十伏的范围。而低压电路的供电电源一般要求比较稳定,因此需要将高压电源进行转换,得到稳定和可靠的低压电源。然而,目前的技术方案是将高压电源直接进行变换得到低压电源,这类方案虽然可以将高压电源变换为低压电源,但是产生的低压电源不够稳定,会随着负载电流的变化而变化;同时输出还取决于器件的特性例如稳压管的稳压值和N管的阈值等,输出不精确,因此不能应用在要求较高的电源类芯片中。For high-voltage power supply ICs, the power supply of the internal high-voltage circuit module is directly provided by an external power supply, while the power supply of the low-voltage circuit module needs to be generated in the chip, and a constant low-voltage power supply is generated by the external power supply to supply power to the internal low-voltage circuit. The external power supply of a high-voltage power supply IC has a relatively large range of variation, generally ranging from 5 volts to tens of volts. The power supply of the low-voltage circuit is generally required to be relatively stable, so it is necessary to convert the high-voltage power supply to obtain a stable and reliable low-voltage power supply. However, the current technical solution is to directly convert the high-voltage power supply to obtain a low-voltage power supply. Although this type of scheme can convert the high-voltage power supply into a low-voltage power supply, the generated low-voltage power supply is not stable enough and will change with the change of the load current; It also depends on the characteristics of the device, such as the regulation voltage of the Zener diode and the threshold of the N-tube, etc., and the output is not accurate, so it cannot be applied to a power chip with higher requirements.
为解决上述问题,提出了一种如图1所示的电路,即采用低压差线性稳压器(LDO,low dropout regulator)结构得到稳定的低压电源,但是该电 路需要使用高压耗尽NMOS,使得电路的成本大大增加;而且,该电路同时还需要LDO电路的基准电路和其它辅助电路,但是该方案没有明确如何解决产生的基准和产生的低压电源相互依存的问题。In order to solve the above problem, a circuit as shown in FIG. 1 is proposed, which uses a low dropout regulator (LDO) structure to obtain a stable low voltage power supply, but the power The circuit needs to use a high voltage depletion NMOS, which greatly increases the cost of the circuit; moreover, the circuit also needs the reference circuit of the LDO circuit and other auxiliary circuits, but the solution does not clearly explain how to solve the generated reference and the resulting low voltage power supply interdependent. problem.
发明内容Summary of the invention
为解决现有存在的技术问题,本发明实施例提供一种低压电源产生电路、方法及IC。In order to solve the existing technical problems, embodiments of the present invention provide a low-voltage power generation circuit, method, and IC.
本发明实施例提供了一种低压电源产生电路,包括:高压LDO电路、启动电路及低压带隙基准电路;其中,Embodiments of the present invention provide a low voltage power generation circuit including: a high voltage LDO circuit, a startup circuit, and a low voltage bandgap reference circuit;
所述启动电路,配置为在所述低压电源产生电路的启动阶段,为所述低压带隙基准电路提供电源;The startup circuit is configured to provide power to the low voltage bandgap reference circuit during a startup phase of the low voltage power generation circuit;
所述低压带隙基准电路,配置为利用所述启动电路提供的电源,向所述高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动。The low voltage bandgap reference circuit is configured to output a corresponding reference voltage to the high voltage LDO circuit by using a power supply provided by the startup circuit to enable the high voltage LDO circuit to start normally.
上述方案中,所述启动电路,配置为:确定所述高压LDO电路输出的电压小于所述启动电路自身输出的电压时,为所述低压带隙基准电路提供电源。In the above solution, the startup circuit is configured to: when determining that the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself, providing power to the low voltage bandgap reference circuit.
上述方案中,所述启动电路,还配置为当所述高压LDO电路正常工作后,停止为所低压带隙基准电路提供电源;In the above solution, the startup circuit is further configured to stop supplying power to the low voltage bandgap reference circuit after the high voltage LDO circuit operates normally;
相应地,所述高压LDO电路,配置为当所述启动电路停止为所述低压带隙基准电路提供电源时,为所述低压带隙基准电路提供电源。Accordingly, the high voltage LDO circuit is configured to provide power to the low voltage bandgap reference circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
上述方案中,所述启动电路,配置为:确定所述高压LDO电路输出的电压大于或等于所述启动电路自身输出的电压时,停止为所述低压带隙基准电路提供电源。In the above solution, the startup circuit is configured to stop supplying power to the low voltage bandgap reference circuit when determining that the voltage output by the high voltage LDO circuit is greater than or equal to the voltage output by the startup circuit itself.
上述方案中,所述高压LDO电路包括:放大器、第一PMOS、第一电阻、第二电阻以及第三电阻;所述启动电路包括:第一NMOS、第二NMOS、第三、第四NMOS、第二PMOS、第三PMOS、第四PMOS、第四电阻以 及稳压二极管。In the above solution, the high voltage LDO circuit includes: an amplifier, a first PMOS, a first resistor, a second resistor, and a third resistor; the startup circuit includes: a first NMOS, a second NMOS, a third, a fourth NMOS, a second PMOS, a third PMOS, a fourth PMOS, and a fourth resistor And Zener diodes.
上述方案中,在所述高压LDO电路中,放大器的负输入端连接所述低压带隙基准电路的输出端,正输入端连接第一电阻的一端及第二电阻的一端,放大器的输出端接连接第一PMOS的栅极;第一PMOS的源极连接输入高压电源,漏极连接第一电阻的另一端、所述启动电路中的第四PMOS的漏极以及所述低压带隙基准电路的输入端;第二电阻的另一端连接第三电阻的一端及所述启动电路中的第四NMOS NM4的栅极;第三电阻的另一端接地;In the above solution, in the high voltage LDO circuit, the negative input end of the amplifier is connected to the output end of the low voltage bandgap reference circuit, and the positive input end is connected to one end of the first resistor and one end of the second resistor, and the output end of the amplifier is connected. Connecting a gate of the first PMOS; a source of the first PMOS is connected to the input high voltage power supply, a drain is connected to the other end of the first resistor, a drain of the fourth PMOS in the startup circuit, and the low voltage bandgap reference circuit The other end of the second resistor is connected to one end of the third resistor and the gate of the fourth NMOS NM4 in the starting circuit; the other end of the third resistor is grounded;
在所述启动电路中,第四电阻的一端连接输入高压电源,另一端连接第一NMOS的栅极和漏极、第二NMOS的栅极以及第三NMOS的栅极,第一NMOS的源极接地;第二NMOS的源极接地,第二NMOS的漏极接第四NMOS的源极;第三NMOS的源极接地,第三NMOS的漏极连接第三PMOS的漏极、稳压二极管的正极、以及第二PMOS的栅极;第四NMOS的漏极连接第三PMOS的栅极、以及第四PMOS的栅极和漏极;第二PMOS的源极连接输入高压电源;稳压二极管的负极连接输入高压电源;第三PMOS的源极连接输入高压电源;第四PMOS的源极连接输入高压电源。In the starting circuit, one end of the fourth resistor is connected to the input high voltage power supply, the other end is connected to the gate and drain of the first NMOS, the gate of the second NMOS, and the gate of the third NMOS, the source of the first NMOS Grounding; the source of the second NMOS is grounded, the drain of the second NMOS is connected to the source of the fourth NMOS; the source of the third NMOS is grounded, and the drain of the third NMOS is connected to the drain of the third PMOS, the Zener diode a positive electrode and a gate of the second PMOS; a drain of the fourth NMOS is connected to the gate of the third PMOS, and a gate and a drain of the fourth PMOS; a source of the second PMOS is connected to the input high voltage power supply; The negative electrode is connected to the input high voltage power supply; the third PMOS source is connected to the input high voltage power supply; and the fourth PMOS source is connected to the input high voltage power supply.
上述方案中,第一PMOS的漏极与地之间还连接有第一电容;第一PMOS的漏极与第三电阻的一端之间还连接有第二电容。In the above solution, a first capacitor is further connected between the drain of the first PMOS and the ground; and a second capacitor is further connected between the drain of the first PMOS and one end of the third resistor.
本发明实施例还提供了一种集成电路,包括上述的低压电源产生电路。Embodiments of the present invention also provide an integrated circuit including the above-described low voltage power generating circuit.
本发明实施例又提供了一种低压电源产生方法,包括:The embodiment of the invention further provides a method for generating a low voltage power supply, comprising:
在所述低压电源产生电路的启动阶段,所述低压电源产生电路的启动电路为所述低压电源产生电路的低压带隙基准电路提供电源;a startup circuit of the low voltage power generating circuit supplies power to a low voltage bandgap reference circuit of the low voltage power generating circuit during a startup phase of the low voltage power generating circuit;
所述低压带隙基准电路利用所述启动电路提供的电源,向所述低压电源产生电路的高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动。 The low voltage bandgap reference circuit outputs a corresponding reference voltage to the high voltage LDO circuit of the low voltage power generating circuit by using a power supply provided by the starting circuit to enable the high voltage LDO circuit to start normally.
上述方案中,所述在所述低压电源产生电路的启动阶段,所述低压电源产生电路的启动电路为所述低压电源产生电路的低压带隙基准电路提供电源,为:In the above solution, in the startup phase of the low-voltage power generating circuit, the starting circuit of the low-voltage power generating circuit supplies power to the low-voltage bandgap reference circuit of the low-voltage power generating circuit, which is:
所述启动电路确定所述高压LDO电路输出的电压小于所述启动电路自身输出的电压时,为所述低压带隙基准电路提供电源。The startup circuit determines that the low voltage bandgap reference circuit supplies power when the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself.
上述方案中,所述方法还包括:In the above solution, the method further includes:
当所述高压LDO电路正常工作后,所述启动电路停止为所低压带隙基准电路提供电源;After the high voltage LDO circuit operates normally, the startup circuit stops supplying power to the low voltage bandgap reference circuit;
相应地,当所述启动电路停止为所述低压带隙基准电路提供电源时,由所述高压LDO电路为所述低压带隙基准电路提供电源。Accordingly, the low voltage bandgap reference circuit is powered by the high voltage LDO circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
上述方案中,所述当所述高压LDO电路正常工作后,所述启动电路停止为所低压带隙基准电路提供电源,为:In the above solution, after the high voltage LDO circuit is working normally, the startup circuit stops supplying power to the low voltage bandgap reference circuit, which is:
确定所述高压LDO电路输出的电压大于或等于所述启动电路自身输出的电压时,所述启动电路停止为所低压带隙基准电路提供电源。When it is determined that the voltage output by the high voltage LDO circuit is greater than or equal to the voltage output by the startup circuit itself, the startup circuit stops supplying power to the low voltage bandgap reference circuit.
本发明实施例提供的低压电源产生电路、方法及IC,在芯片启动阶段,启动电路为低压带隙基准电路提供电源;此时,所述低压带隙基准电路利用所述启动电路提供的电源,向高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动,如此,能有效地解决产生的基准和产生的低压电源相互依存的问题。The low-voltage power generation circuit, method and IC provided by the embodiments of the present invention provide a power supply for the low-voltage bandgap reference circuit during the startup phase of the chip; at this time, the low-voltage bandgap reference circuit utilizes the power supply provided by the startup circuit. The corresponding reference voltage is output to the high voltage LDO circuit to enable the high voltage LDO circuit to start normally, thus effectively solving the problem that the generated reference and the generated low voltage power supply are interdependent.
附图说明DRAWINGS
在附图(其不一定是按比例绘制的)中,相似的附图标记可在不同的视图中描述相似的部件。具有不同字母后缀的相似附图标记可表示相似部件的不同示例。附图以示例而非限制的方式大体示出了本文中所讨论的各个实施例。In the drawings, which are not necessarily to scale, the Like reference numerals with different letter suffixes may indicate different examples of similar components. The drawings generally illustrate the various embodiments discussed herein by way of example and not limitation.
图1为相关技术中一种低压电源产生电路结构示意图; 1 is a schematic structural diagram of a low voltage power generating circuit in the related art;
图2为相关技术中第二种低压电源产生电路结构示意图;2 is a schematic structural diagram of a second low voltage power generating circuit in the related art;
图3为相关技术中第三种低压电源产生电路结构示意图;3 is a schematic structural diagram of a third low voltage power generating circuit in the related art;
图4为相关技术中第四种低压电源产生电路结构示意图;4 is a schematic structural diagram of a fourth low voltage power generating circuit in the related art;
图5为本发明实施例一种低压电源产生电路结构示意图;FIG. 5 is a schematic structural diagram of a low voltage power generation circuit according to an embodiment of the present invention; FIG.
图6为本发明实施例一种具体的低压电源产生电路结构示意图;6 is a schematic structural diagram of a specific low-voltage power generating circuit according to an embodiment of the present invention;
图7为本发明实施例图6所示电路的工作过程示意图;FIG. 7 is a schematic diagram showing the working process of the circuit shown in FIG. 6 according to an embodiment of the present invention; FIG.
图8为本发明实施例图6中各阶段电压的输出曲线示意图;8 is a schematic diagram showing an output curve of voltages of various stages in FIG. 6 according to an embodiment of the present invention;
图9为本发明实施例低压电源产生方法流程示意图。FIG. 9 is a schematic flowchart of a method for generating a low voltage power supply according to an embodiment of the present invention.
具体实施方式detailed description
下面结合附图及实施例对本发明再作进一步详细地描述。The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.
目前,将高压电源变换成低压电源的实现方法一般为将高压电源直接进行变换得到低压电源,如图2、3、4所示的电路,这类方案虽然可以将高压电源变换为低压电源,但是产生的低压电源不够稳定,会随着负载电流的变化而变化;同时输出还取决于器件的特性例如稳压管的稳压值和N管的阈值等,输出不精确,因此不能应用在要求较高的电源类芯片中。具体地,图2所示的电路,其输出的电压取决于稳压管D2的钳位值和晶体管NM0的Vgs电压,因此,输出的电压会随着器件工艺参数的变化以及负载电流的变化而变化;图3所示的电路,其输出的电压取决于三极管Q1、Q2、Q3的集电极和发射极之间的电压Vce,输出的电压同样会随着器件工艺参数的变化;图4所示电路的原理和图2电路的原理相似,其输出的电压取决于稳压管D1的钳位值和晶体管NM1、NM2的Vgs电压,因此输出的电压同样会随着器件工艺参数的变化以及负载电流的变化。At present, the implementation method of converting a high-voltage power source into a low-voltage power source is generally a direct conversion of a high-voltage power source to obtain a low-voltage power source, as shown in Figures 2, 3, and 4, although such a scheme can convert a high-voltage power source into a low-voltage power source, but The generated low-voltage power supply is not stable enough and will change with the load current. At the same time, the output depends on the characteristics of the device, such as the voltage regulation value of the Zener diode and the threshold of the N-tube. The output is not accurate, so it cannot be applied to the requirements. High power class chips. Specifically, the circuit shown in FIG. 2 has a voltage that depends on the clamp value of the Zener diode D2 and the V gs voltage of the transistor NM0. Therefore, the output voltage varies with the process parameters of the device and the load current. And the change; the circuit shown in Figure 3, the output voltage depends on the voltage V ce between the collector and emitter of the transistors Q1, Q2, Q3, the output voltage will also vary with the process parameters of the device; Figure 4 The principle of the circuit shown is similar to that of the circuit of Figure 2. The output voltage depends on the clamp value of the Zener diode D1 and the V gs voltage of the transistors NM1 and NM2. Therefore, the output voltage will also vary with the process parameters of the device. And changes in load current.
为解决上述问题,提出了一种采用LDO结构得到稳定的低压电源的电路,如图1所示,但是该电路需要使用高压耗尽NMOS,而高压耗尽NMOS需要工艺支持,使得电路的成本大大增加;而且,该电路还需要其它电路 提供高压耗尽NMOS的栅电位以及低压线性稳压电路的基准和偏置电路,但是该方案没有明确如何解决产生的基准和产生的低压电源相互依存的问题,即高压输入的电源管理类芯片,其低压电源的产生电路需要带隙基准电路来产生相应的基准电压,而带隙基准电路的工作又需要低压电源,这就形成一个环路,需要将环路打破才能使芯片正常。In order to solve the above problems, a circuit for obtaining a stable low-voltage power supply using an LDO structure is proposed, as shown in FIG. 1, but the circuit needs to use a high-voltage depletion NMOS, and the high-voltage depletion NMOS requires process support, so that the cost of the circuit is greatly increased. Increase; moreover, the circuit requires other circuits Providing a high-voltage depletion NMOS gate potential and a reference and bias circuit for the low-voltage linear regulator circuit, but the solution does not clarify how to solve the problem of the generated reference and the resulting low-voltage power supply interdependence, that is, a high-voltage input power management chip, The low-voltage power generation circuit requires a bandgap reference circuit to generate the corresponding reference voltage, and the bandgap reference circuit requires a low-voltage power supply, which forms a loop that needs to be broken to make the chip normal.
基于此,在本发明的各种实施例中,在芯片启动阶段,启动电路为低压带隙基准电路提供电源;此时,所述低压带隙基准电路利用所述启动电路提供的电源,向高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动。Based on this, in various embodiments of the present invention, the startup circuit supplies power to the low voltage bandgap reference circuit during the chip startup phase; at this time, the low voltage bandgap reference circuit utilizes the power provided by the startup circuit to the high voltage The LDO circuit outputs a corresponding reference voltage to cause the high voltage LDO circuit to start normally.
本发明实施例提供的低压电源产生电路,如图5所示,包括:高压LDO电路51、启动电路52及低压带隙基准电路53;其中,The low-voltage power generating circuit provided by the embodiment of the present invention, as shown in FIG. 5, includes: a high-voltage LDO circuit 51, a starting circuit 52, and a low-voltage bandgap reference circuit 53;
所述启动电路52,配置为在芯片即低压电源产生电路的启动阶段,为所述低压带隙基准电路53提供电源;The startup circuit 52 is configured to supply power to the low voltage bandgap reference circuit 53 during a startup phase of a chip, that is, a low voltage power generation circuit;
所述低压带隙基准电路53,配置为利用所述启动电路52提供的电源,向所述高压LDO电路51输出相应的基准电压,以使所述高压LDO电路51正常启动。The low voltage bandgap reference circuit 53 is configured to output a corresponding reference voltage to the high voltage LDO circuit 51 by the power supply provided by the startup circuit 52 to cause the high voltage LDO circuit 51 to start normally.
其中,在所述高压LDO电路51的正常启动阶段,所述高压LDO电路51能输出相应的电压,但输出的电压值小于设置的电压值。Wherein, in the normal startup phase of the high voltage LDO circuit 51, the high voltage LDO circuit 51 can output a corresponding voltage, but the output voltage value is less than the set voltage value.
所述启动电路52,具体配置为:确定所述高压LDO电路51输出的电压小于所述启动电路52自身输出的电压时,为所述低压带隙基准电路53提供电源。The startup circuit 52 is specifically configured to provide power to the low voltage bandgap reference circuit 53 when the voltage output by the high voltage LDO circuit 51 is less than the voltage output by the startup circuit 52 itself.
所述启动电路52,还配置为当所述高压LDO电路51正常工作后,停止为所低压带隙基准电路53提供电源;The startup circuit 52 is further configured to stop supplying power to the low voltage bandgap reference circuit 53 after the high voltage LDO circuit 51 operates normally;
相应地,所述高压LDO电路51,配置为当所述启动电路52停止为所述低压带隙基准电路53提供电源时,为所述低压带隙基准电路53提供电 源。Accordingly, the high voltage LDO circuit 51 is configured to provide power to the low voltage bandgap reference circuit 53 when the startup circuit 52 stops supplying power to the low voltage bandgap reference circuit 53. source.
其中,所述启动电路52,具体配置为:确定所述高压LDO电路51输出的电压大于或等于自身输出的电压时,停止为所低压带隙基准电路53提供电源。The startup circuit 52 is specifically configured to stop supplying power to the low voltage bandgap reference circuit 53 when determining that the voltage output by the high voltage LDO circuit 51 is greater than or equal to the voltage output by itself.
实际应用时,正常启动后,所述高压LDO电路51可以为所述低压带隙基准电路53、以及芯片中的其它子电路提供稳定的低压电源,比如:偏置模块、振荡器等。In practical applications, after normal startup, the high voltage LDO circuit 51 can provide a stable low voltage power supply for the low voltage bandgap reference circuit 53, and other sub-circuits in the chip, such as a bias module, an oscillator, and the like.
本发明实施例提供的低压电源产生电路,在芯片启动阶段,所述启动电路52为所述低压带隙基准电路53提供电源;此时,所述低压带隙基准电路53利用所述启动电路52提供的电源,向所述高压LDO电路51输出相应的基准电压,以使所述高压LDO电路51正常启动,如此,能有效地解决产生的基准和产生的低压电源相互依存的问题。The low-voltage power generating circuit provided by the embodiment of the present invention provides power to the low-voltage bandgap reference circuit 53 during the chip startup phase; at this time, the low-voltage bandgap reference circuit 53 utilizes the starting circuit 52. The supplied power source outputs a corresponding reference voltage to the high voltage LDO circuit 51 to cause the high voltage LDO circuit 51 to be normally started. Thus, the problem of the generated reference and the generated low voltage power supply interdependence can be effectively solved.
在一实施例中,如图6所示,所述高压LDO电路51可以包括:放大器EA、第一PMOS PM1、第一电阻R1、第二电阻R2以及第三电阻R3,第一电阻R1、第二电阻R2以及第三电阻R3形成电阻反馈网络;所述启动电路52可以包括:第一NMOS NM1、第二NMOS NM2、第三NMOS NM3、第四NMOS NM4、第二PMOS PM2、第三PMOS PM3、第四PMOS PM4、第四电阻R4以及稳压二极管D1。In an embodiment, as shown in FIG. 6, the high voltage LDO circuit 51 may include an amplifier EA, a first PMOS PM1, a first resistor R1, a second resistor R2, and a third resistor R3, and a first resistor R1. The two resistors R2 and the third resistor R3 form a resistance feedback network; the startup circuit 52 may include: a first NMOS NM1, a second NMOS NM2, a third NMOS NM3, a fourth NMOS NM4, a second PMOS PM2, and a third PMOS PM3 The fourth PMOS PM4, the fourth resistor R4, and the Zener diode D1.
图6所示的电路的连接关系为:The connection relationship of the circuit shown in Figure 6 is:
在所述高压LDO电路51中,第一电阻R1、第二电阻R2以及第三电阻R3形成电阻反馈网络,放大器EA的负输入端连接所述低压带隙基准电路53的输出端,即负输入端接收接基准电压VBG,正输入端连接第一电阻R1的一端及第二电阻R2的一端,即正输入端接收电阻反馈网络的反馈信号vfb,放大器EA的输出端接连接第一PMOS PM1的栅极;第一PMOS PM1的源极连接输入高压电源VDD,漏极连接第一电阻R1的另一端、所述启 动电路52中的第四PMOS PM3的漏极以及所述低压带隙基准电路53的输入端;第二电阻R2的另一端连接第三电阻R3的一端及所述启动电路52中的第四NMOS NM4的栅极,即:第四NMOS NM4的栅极接收电阻反馈网络的电压判断信号vg;第三电阻的另一端接地。其中,由于第一PMOS PM1的源极连接输入高压电源VDD,因此需要采用耐高压的高压器件,从而避免器件被烧坏;第一PMOS PM1可以是P型高压DEMOS器件,是所述高压LDO电路51的功率管。第一PMOS PM1的漏极输出低压电源VOUT。高压LDO的作用是利用电阻反馈的比例以及放大器EA的调节来稳定低压电源VOUT的输出在设定值。In the high voltage LDO circuit 51, the first resistor R1, the second resistor R2 and the third resistor R3 form a resistance feedback network, and the negative input terminal of the amplifier EA is connected to the output terminal of the low voltage bandgap reference circuit 53, that is, the negative input. The terminal receives the reference voltage V BG , the positive input terminal is connected to one end of the first resistor R1 and one end of the second resistor R2 , that is, the positive input terminal receives the feedback signal vfb of the resistance feedback network, and the output end of the amplifier EA is connected to the first PMOS PM1 a gate of the first PMOS PM1 connected to the input high voltage power supply VDD, a drain connected to the other end of the first resistor R1, a drain of the fourth PMOS PM3 in the startup circuit 52, and the low voltage bandgap reference circuit The other end of the second resistor R2 is connected to one end of the third resistor R3 and the gate of the fourth NMOS NM4 in the starting circuit 52, that is, the gate of the fourth NMOS NM4 receives the voltage of the resistance feedback network. The signal vg is judged; the other end of the third resistor is grounded. Wherein, since the source of the first PMOS PM1 is connected to the input high voltage power supply VDD, it is necessary to use a high voltage resistant high voltage device to avoid the device being burned out; the first PMOS PM1 may be a P-type high voltage DEMOS device, which is the high voltage LDO circuit. 51 power tube. The drain of the first PMOS PM1 outputs a low voltage power supply VOUT. The function of the high voltage LDO is to use the ratio of the resistance feedback and the adjustment of the amplifier EA to stabilize the output of the low voltage power supply VOUT at the set value.
在所述启动电路52中,第四电阻R4的一端连接输入高压电源VDD,另一端连接第一NMOS NM1的栅极和漏极、第二NMOS NM2的栅极以及第三NMOS NM3的栅极,第一NMOS NM1的源极接地;第二NMOS NM2的源极接地,第二NMOS NM2的漏极接第四NMOS NM4的源极;第三NMOS NM3的源极接地,第三NMOS NM3的漏极连接第三PMOS PM3的漏极、稳压二极管D1的正极、以及第二PMOS PM2的栅极;第四NMOS NM4的漏极连接第三PMOS PM3的栅极、以及第四PMOS PM4的栅极和漏极;第二PMOS PM2的源极连接输入高压电源VDD;稳压二极管D1的负极连接输入高压电源VDD;第三PMOS PM3的源极连接输入高压电源VDD;第四PMOS PM4的源极连接输入高压电源VDD。其中,在图6中,第二PMOS PM2的漏极输出低压电源VOUT。芯片内部的低压模块和低压带隙基准电路53由低压电源VOUT供电,第四电阻R4、第一NMOS NM1、第二NMOS NM2以及第三NMOS NM3组成偏置电路,为各个支路提供电流;第四NMOS NM4是开关管。由于第三PMOS、第四PMOS PM4的源极连接高压电源VDD,因此需要采用耐高压的高压器件,从而避免器件被烧坏;同理,第一NMOS NM1、第二NMOS NM2、第三NMOS NM3以及 第四NMOS NM4的漏极连接高压电源VDD,因此,也需要采用耐高压的高压器件;第三PMOS PM3、第四PMOS PM4可以是P型高压DEMOS器件,第一NMOS NM1、第二NMOS NM2、第三NMOS NM3以及第四NMOS NM4可以是N型高压DEMOS器件。In the starting circuit 52, one end of the fourth resistor R4 is connected to the input high voltage power supply VDD, and the other end is connected to the gate and drain of the first NMOS NM1, the gate of the second NMOS NM2, and the gate of the third NMOS NM3. The source of the first NMOS NM1 is grounded; the source of the second NMOS NM2 is grounded, the drain of the second NMOS NM2 is connected to the source of the fourth NMOS NM4; the source of the third NMOS NM3 is grounded, and the drain of the third NMOS NM3 Connecting the drain of the third PMOS PM3, the anode of the Zener diode D1, and the gate of the second PMOS PM2; the drain of the fourth NMOS NM4 is connected to the gate of the third PMOS PM3, and the gate of the fourth PMOS PM4 and The source of the second PMOS PM2 is connected to the input high voltage power supply VDD; the negative terminal of the Zener diode D1 is connected to the input high voltage power supply VDD; the source of the third PMOS PM3 is connected to the input high voltage power supply VDD; and the source of the fourth PMOS PM4 is connected to the input High voltage power supply VDD. Here, in FIG. 6, the drain of the second PMOS PM2 outputs a low voltage power supply VOUT. The low voltage module and the low voltage bandgap reference circuit 53 are powered by the low voltage power supply VOUT, and the fourth resistor R4, the first NMOS NM1, the second NMOS NM2, and the third NMOS NM3 form a bias circuit for supplying current to each branch; The four NMOS NM4 is a switching transistor. Since the source of the third PMOS and the fourth PMOS PM4 is connected to the high voltage power supply VDD, it is necessary to use a high voltage device that is resistant to high voltage, thereby preventing the device from being burnt out; similarly, the first NMOS NM1, the second NMOS NM2, and the third NMOS NM3 as well as The drain of the fourth NMOS NM4 is connected to the high voltage power supply VDD. Therefore, a high voltage high voltage resistant device is also required; the third PMOS PM3 and the fourth PMOS PM4 may be P-type high voltage DEMOS devices, the first NMOS NM1 and the second NMOS NM2. The third NMOS NM3 and the fourth NMOS NM4 may be N-type high voltage DEMOS devices.
在图6中,在第一PMOS PM1的漏极与地之间还连接有第一电容C0,其作用是滤波电容;在第一PMOS PM1的漏极与第三电阻R3的一端之间还连接有第二电容C1,其作用为补偿电容。In FIG. 6, a first capacitor C0 is further connected between the drain of the first PMOS PM1 and the ground, and functions as a filter capacitor; and is further connected between the drain of the first PMOS PM1 and one end of the third resistor R3. There is a second capacitor C1 which acts to compensate for the capacitance.
在图6中,所述低压带隙基准电路53为所述LDO电路51及芯片内部的其它子电路提供所需的基准电压;内部模块可以是偏置模块、振荡器等需要低压电源的子电路。In FIG. 6, the low voltage bandgap reference circuit 53 provides a required reference voltage for the LDO circuit 51 and other sub-circuits inside the chip; the internal module may be a sub-circuit requiring a low voltage power supply such as a bias module or an oscillator. .
在以下的描述中,将稳压二极管D1的正极、第三PMOS PM3的漏极、第三NMOS MM3的漏极所形成的节点称为A;将第三PMOS PM3的栅极、第四PMOS PM4的栅极和漏极、以及第四NMOS NM4的漏极所形成的节点称为B。In the following description, a node formed by the positive electrode of the Zener diode D1, the drain of the third PMOS PM3, and the drain of the third NMOS MM3 is referred to as A; the gate of the third PMOS PM3, the fourth PMOS PM4 The node formed by the gate and drain and the drain of the fourth NMOS NM4 is referred to as B.
图6所示的电路的工作原理,如图7所示,主要包含以下四个步骤:The working principle of the circuit shown in Figure 6, as shown in Figure 7, mainly includes the following four steps:
步骤701:芯片上电后,所述启动电路52工作;Step 701: After the chip is powered on, the startup circuit 52 operates.
具体地,在上电阶段,由于所述低压带隙基准电路53没有启动,因此,VBG=0,此时,所述高压LDO电路51不能输出正常的稳压值,所以只能依靠所述启动电路52为后级的所述低压带隙基准电路53等先开启子电路供电,从而使所述低压带隙基准电路53正常输出。Specifically, in the power-on phase, since the low-voltage bandgap reference circuit 53 is not activated, V BG =0. At this time, the high-voltage LDO circuit 51 cannot output a normal voltage regulation value, so it can only rely on the The startup circuit 52 supplies power to the first low-voltage bandgap reference circuit 53 of the subsequent stage to open the sub-circuit, thereby causing the low-voltage bandgap reference circuit 53 to output normally.
所述启动电路52的工作原理是:在启动阶段,输入高压电源VDD的电压开始上升,低压电源VOUT的电压VOUT初始为0,当VOUT满足公式(1)的条件时,The working principle of the starting circuit 52 is: in the startup phase, the voltage of the input high voltage power supply VDD starts to rise, and the voltage V OUT of the low voltage power supply VOUT is initially 0. When V OUT satisfies the condition of the formula (1),
Figure PCTCN2015080291-appb-000001
Figure PCTCN2015080291-appb-000001
第四NMOS NM4不开启,流过第二NMOS NM2、第四NMOS NM4和第 四PMOS PM4支路的电流为0,B点的电位为输入高压电源VDD的电压VDD,因而A点的电位被第三NMOS NM3拉到地电位,一般,高压DEMOS器件的耐压在源漏端,其源栅端的耐压要求小于5V,如果此时VDD高于5V而A点被第三NMOS NM3拉到0,则会烧坏第二PMOS PM2,因而这里加入稳压二极管D1,稳压二极管D1作为钳位管,使第二PMOS PM2的源栅电压钳位在5V以内。同时,A点的电位为低电位,致使第二PMOS PM2导通,将输出电压VOUT上拉,该过程对应图8中的T1阶段。The fourth NMOS NM4 is not turned on, the current flowing through the second NMOS NM2, the fourth NMOS NM4, and the fourth PMOS PM4 branch is 0, and the potential at point B is the voltage V DD of the input high voltage power supply VDD, and thus the potential at point A is The third NMOS NM3 is pulled to the ground potential. Generally, the withstand voltage of the high-voltage DEMOS device is at the source and drain terminals, and the withstand voltage requirement of the source gate terminal is less than 5V. If the V DD is higher than 5V at this time, the A point is pulled by the third NMOS NM3. 0, the second PMOS PM2 will be burned out, so the Zener diode D1 is added here, and the Zener diode D1 acts as a clamp tube, so that the source gate voltage of the second PMOS PM2 is clamped within 5V. At the same time, the potential at point A is low, causing the second PMOS PM2 to be turned on, and the output voltage V OUT is pulled up, which corresponds to the T1 phase in FIG.
在公式(1)中,R1表示第一电阻R1的阻值,R2表示第二电阻R2的阻值,R3表示第三电阻R3的阻值,VTHNM4表示第四NMOS NM4的阈值电压。In the formula (1), R 1 represents the resistance of the first resistor R1, R 2 represents the resistance of the second resistor R2, R 3 represents the resistance of the third resistor R3, and V THNM4 represents the threshold voltage of the fourth NMOS NM4. .
当VOUT上升且满足公式(2)时,When V OUT rises and satisfies the formula (2),
Figure PCTCN2015080291-appb-000002
Figure PCTCN2015080291-appb-000002
第四NMOS NM4导通,此时第二NMOS NM2、第四NMOS NM4和第四PMOS PM4有电流流过,第三PMOS PM3镜像第四PMOS PM4的电流将A点的电位上拉,从而调节第二PMOS PM2的开启程度,进而维持VOUT在设定的启动值上;即输出电压满足公式(3);该过程对应图8中的T2阶段。The fourth NMOS NM4 is turned on. At this time, the second NMOS NM2, the fourth NMOS NM4, and the fourth PMOS PM4 have a current flowing, and the third PMOS PM3 mirrors the fourth PMOS PM4 current to pull up the potential of the A point, thereby adjusting the first The degree of opening of the second PMOS PM2, thereby maintaining V OUT at the set starting value; that is, the output voltage satisfies the formula (3); the process corresponds to the T2 phase in FIG.
Figure PCTCN2015080291-appb-000003
Figure PCTCN2015080291-appb-000003
步骤702~703:所述启动电路52为所述低压带隙基准电路53提供电源,使所述低压带隙基准电路53工作;所述低压带隙基准电路53向所述高压LDO电压51输出基准电压,使得所述高压LDO电压51开始工作;Steps 702-703: The startup circuit 52 supplies power to the low-voltage bandgap reference circuit 53 to operate the low-voltage bandgap reference circuit 53; and the low-voltage bandgap reference circuit 53 outputs a reference to the high-voltage LDO voltage 51 a voltage such that the high voltage LDO voltage 51 begins to operate;
具体地,所述启动电路52启动后,维持VOUT在设定的启动值上,即输出电压满足公式(3),该输出电压提供给所述低压带隙基准电路53,使得所述低压带隙基准电路53启动,进而使得VBG逐渐升高。此时,所述高压LDO所对应的输出电压低于启动电路维持的输出电压,即 Specifically, after the startup circuit 52 is activated, maintaining V OUT at a set startup value, that is, the output voltage satisfies the formula (3), and the output voltage is supplied to the low-voltage bandgap reference circuit 53 such that the low-voltage band The gap reference circuit 53 is activated, thereby causing V BG to gradually rise. At this time, the output voltage corresponding to the high voltage LDO is lower than the output voltage maintained by the startup circuit, that is,
Figure PCTCN2015080291-appb-000004
Figure PCTCN2015080291-appb-000004
因而整个电路的输出电压依然由所述启动电路52来确定,该过程对应图8中的T3阶段。Thus the output voltage of the entire circuit is still determined by the start-up circuit 52, which corresponds to the T3 phase of Figure 8.
步骤704、所述高压LDO电路51正常工作,向所述低压带隙基准电路53供电,且所述启动电路52关闭。Step 704, the high voltage LDO circuit 51 operates normally, supplies power to the low voltage bandgap reference circuit 53, and the startup circuit 52 is turned off.
具体地,当VBG继续升高,此时由于所述高压LDO电路51对应的输出电压高于所述启动电路52维持的输出电压,即Specifically, when V BG continues to rise, at this time, since the output voltage corresponding to the high voltage LDO circuit 51 is higher than the output voltage maintained by the startup circuit 52,
Figure PCTCN2015080291-appb-000005
Figure PCTCN2015080291-appb-000005
此电压会致使第四NMOS NM4完全打开,第三PMOS PM3的漏端即A点的电位被拉到VDD,从而致使所述启动电路52的第二PMOS PM2关闭,此时,输出电压VOUT完全由所述高压LDO电路51来确定,该过程对应图8中的T4阶段。This voltage causes the fourth NMOS NM4 to be fully turned on, and the drain terminal of the third PMOS PM3, that is, the potential of point A, is pulled to V DD , thereby causing the second PMOS PM2 of the startup circuit 52 to be turned off. At this time, the output voltage V OUT It is completely determined by the high voltage LDO circuit 51, which corresponds to the T4 stage in FIG.
待所述低压带隙基准电路53工作稳定后,即VBG稳定输出时,此时所述高压LDO电路输出的电压即VOUT稳定在设定的值,即After the low-voltage bandgap reference circuit 53 is stable, that is, when V BG is stably output, the voltage outputted by the high-voltage LDO circuit, that is, V OUT is stabilized at a set value, that is,
Figure PCTCN2015080291-appb-000006
Figure PCTCN2015080291-appb-000006
至此以后,由于VBG是稳定的,即固定不变,因而所述高压LDO电路的输出,即VOUT是一个稳定的值,该输出作为后级电路的电源,使后级的所述低压带隙基准电路53及其它低压电路稳定的工作,该过程对应图8中的T5阶段。After that, since V BG is stable, that is, fixed, the output of the high-voltage LDO circuit, that is, V OUT is a stable value, and the output serves as a power source for the subsequent stage circuit, so that the low-voltage band of the subsequent stage The gap reference circuit 53 and other low voltage circuits operate stably, and the process corresponds to the T5 stage in FIG.
从上面的描述中可以看出,针对高压输入的电源管理类芯片,其低压电源的产生电路需要基准电压而提供基准电压的低压带隙基准电路的工作又需要低压电源,这就形成一个环路,需要将环路打破使芯片正常的问题,本发明实施例提供的低压电源产生电路,利用启动电路在芯片启动阶段为 低压带隙基准电路供电,使低压带隙基准电路输出基准电压,从而使高压LDO正常;而后当电路稳定后启动电路自行关闭。As can be seen from the above description, for the power management chip of the high-voltage input, the low-voltage power generation circuit requires a reference voltage, and the low-voltage bandgap reference circuit that supplies the reference voltage requires a low-voltage power supply, which forms a loop. The low voltage power generating circuit provided by the embodiment of the present invention is required to break the loop to make the chip normal. The low-voltage bandgap reference circuit supplies power to the low-voltage bandgap reference circuit to output the reference voltage, thereby making the high-voltage LDO normal; then the startup circuit turns itself off when the circuit is stable.
本发明实施例技术方案产生的低压电源稳定,由于采用了高压LDO电路,输出的电压精度很高,所以可以隔离输入高压电源的变化与纹波,在性能要求较高的电源管理类芯片中可以降低其它低压电路的电源抑制比(PSRR,Power Supply Rejection Ratio)的设计指标和难度。The low voltage power supply generated by the technical solution of the embodiment of the invention is stable. Because the high voltage LDO circuit is adopted, the output voltage precision is high, so the change and the ripple of the input high voltage power supply can be isolated, and the power management chip with high performance requirements can be used. Reduce the design specifications and difficulty of the Power Supply Rejection Ratio (PSRR) of other low-voltage circuits.
另外,本发明实施例中,启动电路的功耗可以根据第四电阻R4的阻值来调整,即功耗可控,可以通过调整各个支路的电流大小,适应不同的输入电源的启动速度。这里,在调整启动电路的功耗时,可以结合电源的启动速度来确定。In addition, in the embodiment of the present invention, the power consumption of the startup circuit can be adjusted according to the resistance value of the fourth resistor R4, that is, the power consumption is controllable, and the current of each branch can be adjusted to adapt to the startup speed of different input power sources. Here, when adjusting the power consumption of the startup circuit, it can be determined in conjunction with the startup speed of the power source.
除此以外,本发明实施例提供的电路结构简单,芯片面积小,所用器件均为常规器件,不会增加多余的掩膜(mask)层,从而减小了芯片的整体成本。In addition, the circuit provided by the embodiment of the invention has a simple structure, a small chip area, and the devices used are conventional devices, and the unnecessary mask layer is not added, thereby reducing the overall cost of the chip.
本发明实施例还提供了一种IC,包括上述的低压电源产生电路。Embodiments of the present invention also provide an IC including the low voltage power generating circuit described above.
所述集成电路可以是任意需要低压电源的模拟设备,如:充电器,直流电源产生模块等。The integrated circuit can be any analog device that requires a low voltage power supply, such as a charger, a DC power generation module, and the like.
基于上述实施例的低压电源产生电路,本发明实施例还提供了一种低压电源产生方法,如图9所示,该方法包括以下步骤:Based on the low-voltage power generating circuit of the above embodiment, the embodiment of the present invention further provides a low-voltage power generating method. As shown in FIG. 9, the method includes the following steps:
步骤901:在芯片即低压电源产生电路的启动阶段,所述低压电源产生电路的启动电路为所述低压电源产生电路的低压带隙基准电路提供电源;Step 901: In a startup phase of the chip, that is, the low-voltage power generating circuit, the starting circuit of the low-voltage power generating circuit supplies power to the low-voltage bandgap reference circuit of the low-voltage power generating circuit;
具体地,所述启动电路确定所述高压LDO电路输出的电压小于所述启动电路自身输出的电压时,为所述低压带隙基准电路提供电源。Specifically, the startup circuit determines that the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself, and supplies power to the low voltage bandgap reference circuit.
步骤902:所述低压带隙基准电路利用所述启动电路提供的电源,向所述低压电源产生电路的高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动。 Step 902: The low voltage bandgap reference circuit outputs a corresponding reference voltage to the high voltage LDO circuit of the low voltage power generating circuit by using the power supply provided by the starting circuit to enable the high voltage LDO circuit to start normally.
这里,在所述高压LDO电路的正常启动阶段,所述高压LDO电路能输出相应的电压,但输出的电压值小于设置的电压值。Here, in the normal startup phase of the high voltage LDO circuit, the high voltage LDO circuit can output a corresponding voltage, but the output voltage value is less than the set voltage value.
该方法还可以包括:The method can also include:
当所述高压LDO电路正常工作后,所述启动电路停止为所低压带隙基准电路提供电源;After the high voltage LDO circuit operates normally, the startup circuit stops supplying power to the low voltage bandgap reference circuit;
相应地,当所述启动电路停止为所述低压带隙基准电路提供电源时,由所述高压LDO电路为所述低压带隙基准电路提供电源。Accordingly, the low voltage bandgap reference circuit is powered by the high voltage LDO circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
其中,所述当所述高压LDO电路正常工作后,所述启动电路停止为所低压带隙基准电路提供电源,具体为:Wherein, when the high voltage LDO circuit works normally, the startup circuit stops supplying power to the low voltage bandgap reference circuit, specifically:
确定所述高压LDO电路输出的电压大于或等于所述启动电路自身输出的电压时,所述启动电路停止为所低压带隙基准电路提供电源。When it is determined that the voltage output by the high voltage LDO circuit is greater than or equal to the voltage output by the startup circuit itself, the startup circuit stops supplying power to the low voltage bandgap reference circuit.
实际应用时,正常启动后,所述高压LDO电路可以为所述低压带隙基准电路、以及芯片中的其它子电路提供稳定的低压电源,比如:偏置模块、振荡器等。In practical applications, after normal startup, the high voltage LDO circuit can provide a stable low voltage power supply for the low voltage bandgap reference circuit and other sub-circuits in the chip, such as a bias module, an oscillator, and the like.
本发明实施例提供的低压电源产生方法,在芯片启动阶段,启动电路为低压带隙基准电路提供电源;此时,所述低压带隙基准电路利用所述启动电路提供的电源,向高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动,如此,能有效地解决产生的基准和产生的低压电源相互依存的问题。The low-voltage power supply method provided by the embodiment of the present invention provides a power supply for the low-voltage bandgap reference circuit during the startup phase of the chip; at this time, the low-voltage bandgap reference circuit uses the power supply provided by the startup circuit to the high-voltage LDO circuit The corresponding reference voltage is output to enable the high voltage LDO circuit to start normally, and thus, the problem that the generated reference and the generated low voltage power supply are interdependent can be effectively solved.
以上所述,仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。 The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention.

Claims (12)

  1. 一种低压电源产生电路,所述电路包括:高压低压差线性稳压器LDO电路、启动电路及低压带隙基准电路;其中,A low voltage power generating circuit, the circuit comprising: a high voltage low dropout linear regulator LDO circuit, a starting circuit and a low voltage bandgap reference circuit; wherein
    所述启动电路,配置为在所述低压电源产生电路的启动阶段,为所述低压带隙基准电路提供电源;The startup circuit is configured to provide power to the low voltage bandgap reference circuit during a startup phase of the low voltage power generation circuit;
    所述低压带隙基准电路,配置为利用所述启动电路提供的电源,向所述高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动。The low voltage bandgap reference circuit is configured to output a corresponding reference voltage to the high voltage LDO circuit by using a power supply provided by the startup circuit to enable the high voltage LDO circuit to start normally.
  2. 根据权利要求1所述的电路,其中,所述启动电路,配置为:确定所述高压LDO电路输出的电压小于所述启动电路自身输出的电压时,为所述低压带隙基准电路提供电源。The circuit of claim 1 wherein said startup circuit is configured to provide power to said low voltage bandgap reference circuit when said voltage output by said high voltage LDO circuit is less than a voltage output by said startup circuit itself.
  3. 根据权利要求1或2所述的电路,其中,所述启动电路,还配置为当所述高压LDO电路正常工作后,停止为所低压带隙基准电路提供电源;The circuit according to claim 1 or 2, wherein said starting circuit is further configured to stop supplying power to said low voltage bandgap reference circuit after said high voltage LDO circuit operates normally;
    相应地,所述高压LDO电路,配置为当所述启动电路停止为所述低压带隙基准电路提供电源时,为所述低压带隙基准电路提供电源。Accordingly, the high voltage LDO circuit is configured to provide power to the low voltage bandgap reference circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
  4. 根据权利要求3所述的电路,其中,所述启动电路,配置为:确定所述高压LDO电路输出的电压大于或等于所述启动电路自身输出的电压时,停止为所述低压带隙基准电路提供电源。The circuit of claim 3, wherein the startup circuit is configured to: stop determining that the voltage output by the high voltage LDO circuit is greater than or equal to a voltage output by the startup circuit itself, and stopping the low voltage bandgap reference circuit Provide power.
  5. 根据权利要求4所述的电路,其中,所述高压LDO电路包括:放大器、第一PMOS、第一电阻、第二电阻以及第三电阻;所述启动电路包括:第一NMOS、第二NMOS、第三、第四NMOS、第二PMOS、第三PMOS、第四PMOS、第四电阻以及稳压二极管。The circuit of claim 4, wherein the high voltage LDO circuit comprises: an amplifier, a first PMOS, a first resistor, a second resistor, and a third resistor; the startup circuit comprising: a first NMOS, a second NMOS, The third, fourth NMOS, second PMOS, third PMOS, fourth PMOS, fourth resistor, and Zener diode.
  6. 根据权利要求5所述的电路,其中,The circuit according to claim 5, wherein
    在所述高压LDO电路中,放大器的负输入端连接所述低压带隙基准电路的输出端,正输入端连接第一电阻的一端及第二电阻的一端,放大器的输出端接连接第一PMOS的栅极;第一PMOS的源极连接输入高压电源, 漏极连接第一电阻的另一端、所述启动电路中的第四PMOS的漏极以及所述低压带隙基准电路的输入端;第二电阻的另一端连接第三电阻的一端及所述启动电路中的第四NMOS NM4的栅极;第三电阻的另一端接地;In the high voltage LDO circuit, a negative input end of the amplifier is connected to an output end of the low voltage bandgap reference circuit, a positive input end is connected to one end of the first resistor and one end of the second resistor, and an output end of the amplifier is connected to the first PMOS. a gate; a source of the first PMOS is connected to the input high voltage power supply, a drain connected to the other end of the first resistor, a drain of the fourth PMOS in the startup circuit, and an input end of the low voltage bandgap reference circuit; the other end of the second resistor is connected to one end of the third resistor and the startup a gate of a fourth NMOS NM4 in the circuit; the other end of the third resistor is grounded;
    在所述启动电路中,第四电阻的一端连接输入高压电源,另一端连接第一NMOS的栅极和漏极、第二NMOS的栅极以及第三NMOS的栅极,第一NMOS的源极接地;第二NMOS的源极接地,第二NMOS的漏极接第四NMOS的源极;第三NMOS的源极接地,第三NMOS的漏极连接第三PMOS的漏极、稳压二极管的正极、以及第二PMOS的栅极;第四NMOS的漏极连接第三PMOS的栅极、以及第四PMOS的栅极和漏极;第二PMOS的源极连接输入高压电源;稳压二极管的负极连接输入高压电源;第三PMOS的源极连接输入高压电源;第四PMOS的源极连接输入高压电源。In the starting circuit, one end of the fourth resistor is connected to the input high voltage power supply, the other end is connected to the gate and drain of the first NMOS, the gate of the second NMOS, and the gate of the third NMOS, the source of the first NMOS Grounding; the source of the second NMOS is grounded, the drain of the second NMOS is connected to the source of the fourth NMOS; the source of the third NMOS is grounded, and the drain of the third NMOS is connected to the drain of the third PMOS, the Zener diode a positive electrode and a gate of the second PMOS; a drain of the fourth NMOS is connected to the gate of the third PMOS, and a gate and a drain of the fourth PMOS; a source of the second PMOS is connected to the input high voltage power supply; The negative electrode is connected to the input high voltage power supply; the third PMOS source is connected to the input high voltage power supply; and the fourth PMOS source is connected to the input high voltage power supply.
  7. 根据权利要求6所述的电路,其中,第一PMOS的漏极与地之间还连接有第一电容;第一PMOS的漏极与第三电阻的一端之间还连接有第二电容。The circuit of claim 6, wherein a first capacitor is further connected between the drain of the first PMOS and the ground; and a second capacitor is further connected between the drain of the first PMOS and one end of the third resistor.
  8. 一种集成电路,所述集成电路包括如权利要求1至7任一项所述的低压电源产生电路。An integrated circuit comprising the low voltage power generating circuit of any one of claims 1 to 7.
  9. 一种低压电源产生方法,所述方法包括:A method of generating a low voltage power supply, the method comprising:
    在所述低压电源产生电路的启动阶段,所述低压电源产生电路的启动电路为所述低压电源产生电路的低压带隙基准电路提供电源;a startup circuit of the low voltage power generating circuit supplies power to a low voltage bandgap reference circuit of the low voltage power generating circuit during a startup phase of the low voltage power generating circuit;
    所述低压带隙基准电路利用所述启动电路提供的电源,向所述低压电源产生电路的高压LDO电路输出相应的基准电压,以使所述高压LDO电路正常启动。The low voltage bandgap reference circuit outputs a corresponding reference voltage to the high voltage LDO circuit of the low voltage power generating circuit by using a power supply provided by the starting circuit to enable the high voltage LDO circuit to start normally.
  10. 根据权利要求9所述的方法,其中,所述在所述低压电源产生电路的启动阶段,所述低压电源产生电路的启动电路为所述低压电源产生电路的低压带隙基准电路提供电源,为: The method according to claim 9, wherein said startup circuit of said low voltage power generating circuit supplies power to said low voltage bandgap reference circuit of said low voltage power generating circuit during a startup phase of said low voltage power generating circuit :
    所述启动电路确定所述高压LDO电路输出的电压小于所述启动电路自身输出的电压时,为所述低压带隙基准电路提供电源。The startup circuit determines that the low voltage bandgap reference circuit supplies power when the voltage output by the high voltage LDO circuit is less than the voltage output by the startup circuit itself.
  11. 根据权利要求9所述的方法,其中,所述方法还包括:The method of claim 9 wherein the method further comprises:
    当所述高压LDO电路正常工作后,所述启动电路停止为所低压带隙基准电路提供电源;After the high voltage LDO circuit operates normally, the startup circuit stops supplying power to the low voltage bandgap reference circuit;
    相应地,当所述启动电路停止为所述低压带隙基准电路提供电源时,由所述高压LDO电路为所述低压带隙基准电路提供电源。Accordingly, the low voltage bandgap reference circuit is powered by the high voltage LDO circuit when the startup circuit ceases to provide power to the low voltage bandgap reference circuit.
  12. 根据权利要求11所述的方法,其中,所述当所述高压LDO电路正常工作后,所述启动电路停止为所低压带隙基准电路提供电源,为:The method of claim 11 wherein said startup circuit ceases to provide power to said low voltage bandgap reference circuit after said high voltage LDO circuit is operating normally, wherein:
    确定所述高压LDO电路输出的电压大于或等于所述启动电路自身输出的电压时,所述启动电路停止为所低压带隙基准电路提供电源。 When it is determined that the voltage output by the high voltage LDO circuit is greater than or equal to the voltage output by the startup circuit itself, the startup circuit stops supplying power to the low voltage bandgap reference circuit.
PCT/CN2015/080291 2014-12-19 2015-05-29 Low-voltage power generation circuit, method and integrated circuit WO2016095445A1 (en)

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CN114740933A (en) * 2022-04-27 2022-07-12 电子科技大学 Internal reference power rail control circuit for high-voltage LDO (low dropout regulator)
CN114740933B (en) * 2022-04-27 2022-12-02 电子科技大学 Internal reference power rail control circuit for high-voltage LDO (low dropout regulator)
CN115357090A (en) * 2022-08-02 2022-11-18 深圳市诚芯微科技股份有限公司 Zero-power-consumption double-path self-starting circuit and method for band-gap reference regulator
CN116610185A (en) * 2023-05-25 2023-08-18 西安电子科技大学 High-voltage stabilizing circuit adopting PNP type Brokaw reference core
CN116610185B (en) * 2023-05-25 2024-01-09 西安电子科技大学 High-voltage stabilizing circuit adopting PNP type Brokaw reference core

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