WO2016088762A3 - シリサイド系熱電発電素子 - Google Patents

シリサイド系熱電発電素子 Download PDF

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Publication number
WO2016088762A3
WO2016088762A3 PCT/JP2015/083782 JP2015083782W WO2016088762A3 WO 2016088762 A3 WO2016088762 A3 WO 2016088762A3 JP 2015083782 W JP2015083782 W JP 2015083782W WO 2016088762 A3 WO2016088762 A3 WO 2016088762A3
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WO
WIPO (PCT)
Prior art keywords
silicide
power generation
thermoelectric power
generation element
based thermoelectric
Prior art date
Application number
PCT/JP2015/083782
Other languages
English (en)
French (fr)
Other versions
WO2016088762A2 (ja
Inventor
坂本　達也
田口　豊
慎一 笠谷
Original Assignee
株式会社 安永
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 安永 filed Critical 株式会社 安永
Publication of WO2016088762A2 publication Critical patent/WO2016088762A2/ja
Publication of WO2016088762A3 publication Critical patent/WO2016088762A3/ja

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N3/00—Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

　本発明のシリサイド系熱電発電素子（２）は、金属元素とＳｉとの化合物であるシリサイドからなる熱電変換部（２０）と、熱電変換部（２０）の表面の一部に形成された拡散防止層（２６）と、を備え、拡散防止層（２６）は、Ｍ１元素（ただし、Ｍ１元素は、Ｔｉ、Ｃｒ、Ｔａ、Ｍｏ、Ａｌ、Ｖ、Ｚｒ、Ｎｂ、Ｈｆ及びＷよりなる群から選ばれる少なくとも１種の元素）と、Ｍ２元素（ただし、Ｍ２元素は、Ｎ、Ｂ及びＣよりなる群から選ばれる１種の元素）との化合物である。
PCT/JP2015/083782 2014-12-03 2015-12-01 シリサイド系熱電発電素子 WO2016088762A2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014245175A JP2016111091A (ja) 2014-12-03 2014-12-03 シリサイド系熱電発電素子
JP2014-245175 2014-12-03

Publications (2)

Publication Number Publication Date
WO2016088762A2 WO2016088762A2 (ja) 2016-06-09
WO2016088762A3 true WO2016088762A3 (ja) 2016-07-28

Family

ID=56092627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/083782 WO2016088762A2 (ja) 2014-12-03 2015-12-01 シリサイド系熱電発電素子

Country Status (2)

Country Link
JP (1) JP2016111091A (ja)
WO (1) WO2016088762A2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102134378B1 (ko) * 2016-09-27 2020-07-15 주식회사 엘지화학 열전 모듈 및 그 제조 방법
JP2020087997A (ja) * 2018-11-16 2020-06-04 株式会社安永 スタナイド系熱電変換素子及びスタナイド系熱電変換モジュール

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128522A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 熱−電気直接変換装置
US20140014152A1 (en) * 2012-07-13 2014-01-16 Industrial Technology Research Institute Thermoelectric conversion structure and its use in heat dissipation device
WO2014033891A1 (ja) * 2012-08-31 2014-03-06 株式会社日立製作所 熱電変換デバイス
US20140096809A1 (en) * 2012-10-08 2014-04-10 Samsung Electronics Co., Ltd. Thermoelectric device, thermoelectric module including the thermoelectric device, thermoelectric apparatus including the thermoelectric module, and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128522A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 熱−電気直接変換装置
US20140014152A1 (en) * 2012-07-13 2014-01-16 Industrial Technology Research Institute Thermoelectric conversion structure and its use in heat dissipation device
WO2014033891A1 (ja) * 2012-08-31 2014-03-06 株式会社日立製作所 熱電変換デバイス
US20140096809A1 (en) * 2012-10-08 2014-04-10 Samsung Electronics Co., Ltd. Thermoelectric device, thermoelectric module including the thermoelectric device, thermoelectric apparatus including the thermoelectric module, and method of manufacturing the same

Also Published As

Publication number Publication date
JP2016111091A (ja) 2016-06-20
WO2016088762A2 (ja) 2016-06-09

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