WO2016085044A1 - Procédé de fabrication de batterie solaire multi-jonction utilisant un film mince composite et batterie solaire multi-jonction - Google Patents

Procédé de fabrication de batterie solaire multi-jonction utilisant un film mince composite et batterie solaire multi-jonction Download PDF

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WO2016085044A1
WO2016085044A1 PCT/KR2015/001701 KR2015001701W WO2016085044A1 WO 2016085044 A1 WO2016085044 A1 WO 2016085044A1 KR 2015001701 W KR2015001701 W KR 2015001701W WO 2016085044 A1 WO2016085044 A1 WO 2016085044A1
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cell
layer
substrate
transparent electrode
forming
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Korean (ko)
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김기환
곽지혜
윤재호
조준식
어영주
조아라
윤경훈
신기식
안세진
유진수
박주형
안승규
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한국에너지기술연구원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a multi-junction solar cell and a method for manufacturing the same, and more particularly, to a multi-junction solar cell having a plurality of compound thin film solar cell cells and a method of manufacturing the same.
  • the solar cell is a device that directly converts solar energy into electrical energy, and is expected to be an energy source capable of solving future energy problems due to its low pollution, infinite resources, and a semi-permanent lifetime.
  • Solar cells are classified into various types according to materials used as light absorption layers, and at present, the most commonly used are silicon solar cells using silicon.
  • silicon solar cells using silicon.
  • Thin-film solar cells are manufactured with a thin thickness, so the materials are consumed less and the weight is lighter, so the application range is wide.
  • CIGS Copper Indium Gallium Selenide
  • CIGS Copper Indium Gallium Selenide
  • Tandem solar cell refers to a multi-layered solar cell in which two single-cell CIGS solar cells are stacked.
  • the lower cell is manufactured and then the upper cell is formed thereon, so that the lower cell already formed is damaged in the process of forming the upper cell, thereby making it difficult to obtain the expected energy conversion efficiency. There is.
  • Patent Document 1 Republic of Korea Patent Publication 10-2010-0028729
  • Patent Document 2 United States Patent Publication 2012-0204939
  • the present invention has been made in view of the above-described problems of the prior art, and a purpose of the present invention is to provide a multi-junction solar cell and a method of manufacturing the same, in which the manufacturing process is simple and there is no problem of cell degradation.
  • Multi-junction solar cell manufacturing method using a compound thin film for achieving the above object comprises the steps of forming a transparent electrode layer on the upper and lower surfaces of the substrate; Forming a light absorption layer on upper and lower surfaces of the substrate on which the transparent electrode layer is formed; Forming a buffer layer on an upper surface and a lower surface of the substrate on which the light absorption layer is formed; And forming a front electrode on a top surface of the substrate on which the buffer layer is formed and a back electrode on a bottom surface of the substrate.
  • Multi-junction solar cell manufacturing method using a compound thin film of another form forming a transparent electrode layer on the upper and lower surfaces of the substrate; Forming a buffer layer on an upper surface and a lower surface of the substrate on which the transparent electrode layer is formed; Forming a light absorption layer on upper and lower surfaces of the substrate on which the buffer layer is formed; And forming a front electrode on an upper surface of the substrate on which the light absorption layer is formed and a rear electrode on a lower surface of the substrate.
  • an upper upper cell and a lower lower cell are formed symmetrically with respect to the substrate, and an energy band gap of the light absorbing layer including the energy band gap of the light absorbing layer included in the lower cell is included in the upper cell. It is characterized by a narrower.
  • the method may further include electrically connecting the upper cell and the lower cell, wherein the transparent electrode layer of the upper cell and the rear electrode of the lower cell are electrically connected or the front electrode of the upper cell and the transparent electrode layer of the lower cell are electrically connected.
  • the electrical current must be connected electrically.
  • the light absorbing layer is preferably one or more materials selected from CIGS, CdTe, CZTS, group III-V semiconductor and perovskite structure material, but is not limited thereto.
  • the buffer layer may be simultaneously formed in the upper cell and the lower cell in the step of forming the buffer layer, and the transparent electrode layer may be simultaneously formed on both sides of the substrate in the step of forming the transparent electrode layer, thereby reducing the process.
  • Another method of manufacturing a multi-junction solar cell using a compound thin film includes: forming a transparent electrode layer on an upper surface and a lower surface of a substrate; Forming a first buffer layer on only one of an upper surface and a lower surface of the substrate on which the transparent electrode layer is formed; Forming a light absorption layer on upper and lower surfaces of the substrate on which only the first buffer layer is formed; Forming a second buffer layer on an upper surface and a lower surface of the substrate on which the light absorption layer is formed, on which the first buffer layer is not formed; And forming a front electrode on an upper surface of the upper cell based on the substrate and forming a rear electrode on a lower surface of the lower cell, wherein the energy band gap of the light absorption layer included in the lower cell is included in the upper cell. It is characterized in that the narrower than the energy band gap of the light absorption layer.
  • the present invention is characterized in that the upper side forms an upper cell and the lower side forms a lower cell centering on a substrate.
  • Multi-junction solar cell using a compound thin film for achieving the above object the substrate; A first transparent electrode layer formed on an upper surface of the substrate and a second transparent electrode layer formed on a lower surface of the substrate; A first light absorbing layer formed on the first transparent electrode layer and a second light absorbing layer formed under the second transparent electrode layer; A first buffer layer formed over the first light absorbing layer and a second buffer layer formed under the second light absorbing layer; A front electrode formed on the first buffer layer; And a rear electrode formed under the second buffer layer, wherein the upper upper cell and the lower lower cell are symmetrically configured based on the substrate, and the energy band gap of the light absorption layer included in the lower cell is the upper cell. It is characterized in that the narrower than the energy bandgap of the light absorption layer included in.
  • Multi-junction solar cell using another type of compound thin film, substrate A first transparent electrode layer formed on an upper surface of the substrate and a second transparent electrode layer formed on a lower surface of the substrate; A second buffer layer formed below the first transparent electrode layer and the first buffer layer formed on the first transparent electrode layer; A first light absorbing layer formed above the first buffer layer and a second light absorbing layer formed below the second buffer layer; A front electrode formed on the first light absorption layer; And a rear electrode formed below the second light absorbing layer, wherein the upper upper cell and the lower lower cell are symmetrically configured based on the substrate, and an energy band gap of the light absorbing layer included in the lower cell is upper than the upper electrode. It is characterized in that the narrower than the energy bandgap of the light absorption layer contained in the cell.
  • the solar cell is manufactured by the above method and has a symmetrical shape with respect to the substrate, and may have a structure in which the first transparent electrode layer and the rear electrode are electrically connected or the second transparent electrode layer and the front electrode are electrically connected.
  • the light absorption layer is made of CIGS material
  • the rear electrode is made of metal reflective electrode.
  • the upper cell and the lower cell are formed in the upper and lower centers around the substrate, respectively, without continuously stacking in one direction, so that in the case of manufacturing the lower cell and the upper cell sequentially in the past There is an effect of avoiding the problem that the light absorbing layer of the first cell is degraded by the heat generated in the manufacturing process of the cell to be manufactured and the damage occurring at the interface between the light absorbing layer and the buffer layer of the cell previously manufactured.
  • the number of processes is reduced as compared to the case of manufacturing the upper cell and the lower cell, respectively, there is an effect that can prevent the problem occurring in the process of separately manufacturing the upper cell and the lower cell.
  • 1 to 5 are schematic diagrams showing a method of manufacturing a multi-junction solar cell according to the present embodiment.
  • FIG. 6 is a view showing the electrical connection of the multi-junction solar cell according to the present embodiment.
  • FIG. 7 is a schematic diagram showing the structure of a multi-junction solar cell according to a second embodiment of the present invention.
  • FIG. 8 is a view showing the electrical connection relationship of a multi-junction solar cell according to a second embodiment of the present invention.
  • FIG. 9 is a schematic diagram showing the structure of a multi-junction solar cell according to a third embodiment of the present invention.
  • FIG. 10 is a schematic diagram showing the structure of a multi-junction solar cell according to a fourth embodiment of the present invention.
  • substrate 210 first transparent electrode layer
  • first light absorbing layer 230 first buffer layer
  • 1 to 5 are schematic diagrams showing a method of manufacturing a multi-junction solar cell according to the present embodiment.
  • the first transparent electrode layer 210 and the second transparent electrode layer 310 are formed on the top and bottom surfaces of the substrate 100, respectively.
  • the substrate 100 is positioned in the center of the multi-junction solar cell of the present embodiment, the light is transmitted through the upper cell to the lower cell, and the insulating material is preferably an electrically insulating material, but is not limited thereto.
  • the first transparent electrode layer 210 and the second transparent electrode layer 310 is generally a TCO such as ITO, but is not limited thereto.
  • the transparent electrode layer 210 and the second transparent electrode layer 310 may be made of a material through which electricity flows while transmitting light.
  • the first transparent electrode layer 210 and the second transparent electrode layer 310 are sequentially or simultaneously formed on both surfaces of the substrate 100. The number of processes is reduced when the first transparent electrode layer 210 and the second transparent electrode layer 310 are formed at the same time.
  • the first light absorbing layer 220 and the second light absorbing layer 320 are formed on the upper and lower surfaces of the first transparent electrode layer 210 and the second transparent electrode layer 310. At this time, it is preferable to simultaneously form the first light absorbing layer 220 and the second light absorbing layer 320, but it is also not necessary, and the first light absorbing layer 220 and the second light absorbing layer 320 may be sequentially formed. Do.
  • the first light absorbing layer 220 and the second light absorbing layer 320 are light absorbing layers made of CIGS material, except that a light absorbing layer is formed on both sides of the substrate, thereby forming a conventional CIGS light absorbing layer. All methods can be applied. Specifically, both a non-vacuum method using a nanoparticle precursor or a solution precursor of a raw material and a vacuum method such as three-stage co-vacuum evaporation methods are possible.
  • the energy band gaps of the first light absorbing layer 220 and the second light absorbing layer 320 are different from each other, and the energy band gap of the second light absorbing layer 320 constituting the lower cell constitutes the upper cell. It is configured to be narrower than the energy band gap of the one light absorption layer 220.
  • CIGS is used as a material of the light absorption layer in the present embodiment, the present invention is not limited thereto.
  • the first and second buffer layers 230 and 330 are formed on the upper and lower surfaces of the first and second light absorbing layers 220 and 320, respectively.
  • the method of forming the first buffer layer 230 and the second buffer layer 330 is not particularly limited. Specifically, a CdS film is generally formed by a chemical bath deposition (CBD) process, a ZnS film or a ZnSe film may be formed by a CBD process, or an In x Se y film or a ZnIn x Se y film may be formed by an evaporation method. An In x Se y film or a ZnSe film may be formed by the step.
  • the first buffer layer 230 and the second buffer layer 330 may be formed at the same time, or may be formed sequentially. The number of processes is reduced when the first buffer layer 230 and the second buffer layer 330 are simultaneously formed.
  • the first light absorbing layer 220 and the second light absorbing layer 320 are first formed by the heat generated during the manufacturing process of the cell.
  • the problem of deterioration of the light absorbing layer of the manufactured cell and damage occurring at the interface between the light absorbing layer and the buffer layer of the manufactured cell can be avoided.
  • the number of processes is reduced compared to the case of manufacturing the upper and lower cells, respectively. Furthermore, there is an effect that can prevent a problem occurring in the process of separately manufacturing the upper cell and the lower cell bonding.
  • the front electrode 240 and the rear electrode 340 are formed.
  • the front electrode 240 is formed on the surface of the upper cell to the light incident to form a transparent electrode
  • the rear electrode 340 is an electrode located on the lower surface of the lower cell metal material that can reflect the light To form a reflective electrode.
  • the rear electrode 340 and the first transparent electrode layer 210 are electrically connected as shown in FIG. 5.
  • the solar cell manufactured according to the present embodiment has a structure in which the upper cell and the lower cell have a symmetrical shape with respect to the substrate, and when the circuit diagram for the solar cell configuration is shown, as shown in FIG. It is an arranged form. Therefore, when the lower electrode of the upper cell and the upper electrode of the lower cell are electrically connected as in the conventional tandem solar cell, electricity does not flow, and the rear electrode 340 and the first transparent electrode layer 210 are electrically connected to each other. The electrode 240 and the second transparent electrode layer 310 must be electrically connected. Meanwhile, even in the 4-terminal structure in which the upper cell and the lower cell are individually connected without being connected in series, the direction of the current according to the structure of the solar cell should be considered.
  • the second light absorption layer 320 is preferably thin. Specifically, the thickness of the second light absorption layer 320 is preferably 1 ⁇ m or less.
  • this embodiment has been described for manufacturing a tandem solar cell having a basic structure, and various structures or processes may be added to increase the efficiency of the solar cell in a range that does not impair the technical features of the present invention.
  • FIG. 7 is a schematic diagram showing the structure of a multi-junction solar cell according to a second embodiment of the present invention.
  • the solar cell of FIG. 7 is the first solar cell of FIG. 5 in that the first buffer layer 230 and the second buffer layer 330 are first formed, and the first light absorption layer 220 and the second light absorption layer 320 are formed. There is a difference. Other parts except this are the same as the first solar cell, so a detailed description thereof will be omitted.
  • the solar cell illustrated in FIG. 7 electrically connects the back electrode 340 and the first transparent electrode layer 210 or the front electrode 240.
  • the second transparent electrode layer 310 must be electrically connected.
  • the first light absorbing layer 220 is preferably thin. Specifically, the thickness of the first light absorption layer 220 is preferably 1 ⁇ m or less.
  • FIGS. 9 and 10 are schematic diagrams showing the structure of a multi-junction solar cell manufactured according to the third and fourth embodiments.
  • the illustrated embodiments are characterized in that after forming the first transparent electrode layer 210 and the second transparent electrode layer 310 on both surfaces of the substrate 100, the buffer layer is first formed on only one surface thereof.
  • the first buffer layer 230 is first formed, the first light absorption layer 220 and the second light absorption layer 320 are formed, and the second buffer layer 330 is formed. It is done.
  • the second buffer layer 330 is first formed, and then, the first light absorption layer 220 and the second light absorption layer 320 are formed, and the first buffer layer 230 is formed. .
  • the first transparent electrode layer 210 and the second transparent electrode layer 310 are electrically connected to each other.

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Abstract

La présente invention concerne un procédé de fabrication d'une batterie solaire multi-jonction comportant une pluralité de cellules de batterie solaire à film mince composite, le procédé comprenant les étapes consistant à : former des couches d'électrode transparente sur le côté supérieur et le côté inférieur d'un substrat ; former simultanément des couches d'absorption de lumière sur le côté supérieur et le côté inférieur du substrat sur lequel sont formées les couches d'électrode transparente ; former des couches tampons sur le côté supérieur et le côté inférieur du substrat sur lequel sont formées les couches d'absorption de lumière ; et former une électrode avant sur le côté supérieur du substrat sur lequel sont formées les couches tampons, et former une électrode arrière sur le côté inférieur de celui-ci. La présente invention permet à une cellule supérieure et une cellule inférieure d'être respectivement formées sur le côté supérieur et le côté inférieur autour d'un substrat sans empiler continuellement la cellule supérieure et la cellule inférieure dans une direction, ce qui a pour effet d'éviter, lorsqu'une cellule supérieure et une cellule inférieure sont séquentiellement fabriquées dans un procédé classique : un problème dans lequel une couche d'absorption de lumière d'une cellule fabriquée en premier se détériore sous l'effet de la chaleur dégagée au cours d'une étape de fabrication d'une cellule fabriquée plus tard ; et des dommages se produisant sur une interface entre la couche d'absorption de lumière et une couche tampon de la cellule fabriquée en premier. En outre, par comparaison avec le moment où la cellule supérieure et la cellule inférieure sont fabriquées respectivement, le nombre d'étapes est réduit, et un problème se produisant au cours du processus de fabrication et de liaison séparées de la cellule supérieure et de la cellule inférieure peut être évité.
PCT/KR2015/001701 2014-11-25 2015-02-23 Procédé de fabrication de batterie solaire multi-jonction utilisant un film mince composite et batterie solaire multi-jonction WO2016085044A1 (fr)

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US20180151304A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Perovskite solar cells for space

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KR102141264B1 (ko) 2016-07-29 2020-08-04 주식회사 엘지화학 유무기 복합 태양전지 제조방법
KR101870236B1 (ko) * 2016-09-22 2018-06-25 재단법인대구경북과학기술원 투명 전도 산화막 기판을 이용한 양면 czts계 태양전지의 제조방법 및 이로부터 제조된 태양전지

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090034078A (ko) * 2007-10-02 2009-04-07 엘지전자 주식회사 탠덤형 박막 태양전지 및 그의 제조방법
KR20110035796A (ko) * 2009-09-30 2011-04-06 엘지이노텍 주식회사 태양광 발전장치, 이를 포함하는 태양광 발전 시스템 및 이의 제조방법
US20130319502A1 (en) * 2012-05-31 2013-12-05 Aqt Solar, Inc. Bifacial Stack Structures for Thin-Film Photovoltaic Cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100028729A (ko) 2008-09-05 2010-03-15 삼성전자주식회사 복층 구조의 태양 전지 및 그 제조 방법
US20120204939A1 (en) 2010-08-23 2012-08-16 Stion Corporation Structure and Method for High Efficiency CIS/CIGS-based Tandem Photovoltaic Module
KR20120063324A (ko) * 2010-12-07 2012-06-15 한국전자통신연구원 양면 태양전지

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090034078A (ko) * 2007-10-02 2009-04-07 엘지전자 주식회사 탠덤형 박막 태양전지 및 그의 제조방법
KR20110035796A (ko) * 2009-09-30 2011-04-06 엘지이노텍 주식회사 태양광 발전장치, 이를 포함하는 태양광 발전 시스템 및 이의 제조방법
US20130319502A1 (en) * 2012-05-31 2013-12-05 Aqt Solar, Inc. Bifacial Stack Structures for Thin-Film Photovoltaic Cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DAVID. L. YOUNG ET AL.: "A New Thin-Film CuGaSe2/Cu(In,Ga)Se2 Bifacial, Tandem Solar Cell with Both Junctions Formed Simultaneously", 29TH IHHE PVSC, 20 May 2002 (2002-05-20), pages 1 - 2 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180151304A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Perovskite solar cells for space
US10861992B2 (en) * 2016-11-25 2020-12-08 The Boeing Company Perovskite solar cells for space

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