WO2016071307A1 - Optoelektronisches bauelement und verfahren zu seiner herstellung - Google Patents
Optoelektronisches bauelement und verfahren zu seiner herstellung Download PDFInfo
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- WO2016071307A1 WO2016071307A1 PCT/EP2015/075517 EP2015075517W WO2016071307A1 WO 2016071307 A1 WO2016071307 A1 WO 2016071307A1 EP 2015075517 W EP2015075517 W EP 2015075517W WO 2016071307 A1 WO2016071307 A1 WO 2016071307A1
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- semiconductor chip
- optoelectronic
- metallization
- optoelectronic component
- optoelectronic semiconductor
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Definitions
- the present invention relates to an optoelectronic component according to patent claim 1 and to a method for producing an optoelectronic component according to patent claim 14.
- Optoelectronic components such as light-emitting diode components
- Optoelectronic components are known with different housing variants from the prior art.
- opto ⁇ electronic components are known in which an optoelectron ⁇ ronic semiconductor chip is embedded in a molded body, which forms a supporting housing component.
- Such optoelectronic components have very compact external dimensions.
- An object of the present invention is to provide an optoelectronic device. This Aufga ⁇ be is achieved by an optoelectronic device with the features of claim 1.
- a further object of the present invention is to specify a method for producing an optoelectronic component. This object is achieved by a method having the features of claim 14. In the dependent claims various developments are given.
- An optoelectronic component has a composite body which comprises a shaped body and an optoelectronic semiconductor chip embedded in the shaped body.
- An electrically conductive via extends from an upper surface of the composite to an underside of the composite. bund stressess by the molding.
- An upper side of the opto ⁇ electronic semiconductor chip is at least partially not covered by the molding.
- the optoelectronic semiconductor chip has a first electrical contact on its upper side.
- a first top side metallization is arranged, which electrically conductively connects the first electrical contact to the via.
- the optoelectronic Bauele ⁇ ment has an upper insulating layer which extends over the first top metallization.
- the optoelectronic component on a second Obersei ⁇ tenmetallmaschine by the upper insulating layer is disposed over the top in isolation insulation layer and electrically from the first top metallization.
- the arranged at the top of the composite of this optoelectronic ⁇ African device second Oberrestmetalli ⁇ tion can form a reflective mirror layer, which increases the reflectivity of the top of the composite body of the optoelectronic device.
- absorption losses are advantageously reduced at the top of the composite body, whereby the optoelectronic component can have a high efficiency.
- This opto electro ⁇ African component second Obercontactmetalli ⁇ tion may also protect the material of the shaped body, this optoelectronic component against excessive aging of, which can cause an advantageous increase in the life ⁇ duration of the optoelectronic component.
- Other organic components of this optoelectronic ⁇ rule component, for example the upper insulation ⁇ layer can be protected by the second top metallization from excessive aging.
- the upper insulation layer also extends over the Top of the optoelectronic semiconductor chip. ⁇ advantage adhesive enough, this simplifies the production of the upper insulating layer.
- the upper insulating layer extends over the entire upper side of the composite body.
- the optoelectronic component can thereby be produced particularly easily.
- the second top side metallization extends over part of the top side of the optoelectronic semiconductor chip.
- the second Oberencemetal- Capitalization may extend also over an edge of the top of the optoelekt ⁇ tronic semiconductor chips. This beneficial ⁇ way legally increasing the reflectivity of the edge region of Obersei ⁇ te of the optoelectronic semiconductor chips of opto electro ⁇ African component, whereby absorption losses re- may be prised, resulting in an increase in the efficiency of the optoelectronic component result.
- the second top metallization of the optoelectronic component is electrically insulated by the upper insulating layer against the ers ⁇ te top metallization of the optoelectronic component, it is harmless if the second top metallization, arranged for example via a peripheral area of the top surface of the optoelectronic semiconductor chip Schlackegrat, electrically conductive is connected to a second electrical contact of the optoelectronic see semiconductor chip.
- the second top side metallization does not extend over an emission region on the top side of the optoelectronic semiconductor chip.
- a radiation of electromagnetic radiation through the optoelectronic semiconductor chip of the optoelectronic construction Elements thereby not affected by the second Oberlitmetalli ⁇ tion.
- a wavelength-material is arranged.
- the wavelength converting material may for example be used to convert light emitted by the optoelectronic semiconductor chip of the optoelectronic component electromagnetic ⁇ specific radiation at least partly into electromagnetic radiation of a different wavelength.
- the second top side metallization disposed on the upper side of the composite body of the optoelectronic component may form a cavity containing the wavelength converting material in the region bounded by the second top side metallization.
- a first Side metallization disposed and electrically connected to the contact.
- the first Unterprovidemetalli ⁇ tion is thus electrically connected via the via and the first top ⁇ rivmetallmaschine with the first electrical contact of the optoelectronic semiconductor chip of the optoelectronic component.
- the first underside metallization can serve for the electrical contacting of the optoelectronic component.
- the optoelectronic component is an underside of the optoelectronic semiconductor chip on the underside of the composite body at least in part as free ⁇ . In this case, the optoelectronic semiconductor chip on its underside ⁇ clock to a second electrical contact.
- the second electrical contact of the optoelectronic semiconductor chip on the underside of the composite body of the optoelectronic component is also released, which allows a first electrical contact of the opto-electronic ⁇ semiconductor chips of the optoelectronic component.
- the second top-side metallization is electrically conductively connected to the second electrical contact.
- Eg can be ⁇ tend connected to the second electrical contact of the opto electro ⁇ African semiconductor chip, the second top metallization over a arranged in an edge region of the top of the optoelectronic semiconductor chip electrically Schlackegrat lei. Since the second upper-side metallization is electrically insulated from the first upper-side metallization by the upper insulating layer, there is advantageously no short circuit between the first electrical contact and the second electrical contact of the optoelectronic semiconductor chip in this case as well.
- a second component is attached to the lower side of the composite body.
- Side metallization disposed and electrically conductively connected to the second electrical contact.
- the second underside metallization together with the first underside metallization, enables electrical contacting of the optoelectronic component.
- the optoelectronic component can be provided, for example, as an SMT component for surface mounting, for example for surface mounting by reflow soldering (reflow soldering).
- a protective diode is embedded in the molded body.
- the first top metallization is electrically connected to the protective diode.
- the protective diode can cause protection of the optoelectronic semiconductor chip of the opto ⁇ electronic device from damage by electrostatic discharges.
- the second underside metallization is electrically conductively connected to the protective diode.
- the protective diode is electrically connected in anti-parallel to the optoelectronic semiconductor chip of the optoelectronic component.
- a method of manufacturing an optoelectronic construction elements comprises the steps of providing an opto ⁇ semiconductor electronic chip having on an upper side ei ⁇ NEN first electrical contact, and for embedding the optoelectronic semiconductor chip in a molding to form a composite body.
- the upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body.
- the method includes further steps of applying one from an upper surface of the composite body to an underside of the composite body through the molded body extending electrically conductive through contact, for applying a first electrical contact electrically conductively connected to the contact ⁇ the first top metallization at the top of the composite body, for applying a via the first
- This method enables the production of an opto ⁇ electronic device with compact outer dimensions.
- the voltage applied to the upper surface of the composite body of the second component optoelekt- tronic Oberactionmetalli ⁇ tion may serve as a reflective layer to a Reflekti- tivity the upper surface of the composite body to increase. Characterized absorption losses are reduced at the top of the Verbundkör ⁇ pers of the optoelectronic component, thereby obtainable by the process optoelectronic ⁇ construction element can have a high efficiency.
- the second top side metallization applied to the top of the composite may also cover organic components of the optoelectronic device, such as the molded article, thereby protecting it from over-aging.
- the optoelectronic component obtainable by the method can advantageously have a long service life.
- the upper Iso ⁇ lations slaughter will be applied extending over the entire top surface of the composite ⁇ body.
- the method is thereby particularly easy to carry out.
- the second top-side metallization is applied so that it does not have an emission region at the top of the optoelectronic Ronic semiconductor chips extends.
- ⁇ not prevent the second top metallization characterized emission of electromagnetic radiation by the optoelectronic semiconductor chip of the purseli- chen by the process of the optoelectronic component.
- to apply the second top-side metallization steps are carried out for arranging a layer of a photoresist on the top insulating layer, for operating the opto-electronic
- the precise alignment is advantageously achieved automatically by using the optoelectronic semiconductor chip for exposure of the layer of the photoresist. As a result, advantageously no further complicated alignment measures are required.
- further step of arranging a wavelength converting material in a completely bounded by the second top metallization area at the top of the composite body comprises.
- the wavelength-converting material can serve this purpose, from the optoelectronic
- the arrangement of the wavelength-converting material in the region completely surrounded by the second top-side metallization is advantageously simple and inexpensive to carry out and makes it possible to produce an optoelectronic component with compact external dimensions. In this method, since it is possible to precisely align the region completely surrounded by the second surface metallization at the upper surface of the composite body with the radiation emission surface at the upper surface of the optoelectronic semiconductor chip, the wavelength-converting material disposed in the confined region also becomes precisely at the radiation emission region at the Aligned top of the optoelectronic semiconductor chip.
- another is prior to the application of the first top side metallization
- the lower insulation layer may possibly cover the slag fraction which is present in the edge region of the upper side of the optoelectronic semiconductor chip and which is electrically connected to a second electrical contact of the optoelectronic semiconductor chip.
- Semiconductor chips can be prevented, whereby a short circuit between the first electrical contact and the second electrical contact of the optoelectronic semiconductor chip is avoided.
- the through contact is embedded in the molded body together with the optoelectronic semiconductor chip.
- the through contact and the opto electronic semiconductor chip can be transformed simultaneously with the material of the molding.
- Figure 1 is a plan view of a first optoelectronic
- Figure 2 is a sectional side view of the first optical rule ⁇ device
- Figure 3 is a plan view of a second optoelectronic
- Figure 4 is a sectional side view of a third
- FIG. 1 shows a schematic and partially transparent plan view of a first optoelectronic component 10.
- FIG. 2 shows a schematic sectional side view of the first optoelectronic component 10, wherein the first optoelectronic component 10 is cut at a sectional plane II drawn in FIG.
- the first opto-electronic device 10 may ⁇ example, be a light-emitting device (LED) device, which is provided for emitting electromagnetic radiation, such as visible light.
- LED light-emitting device
- the first optoelectronic component 10 has a Ver ⁇ bund body 100th
- the composite body 100 is replaced by a Formed mold body 200 in which an optoelectronic semiconductor chip 300, a contact 400 and a Schutzdi ⁇ 500 are embedded.
- the molded body 200 has an electrically insulating molding material.
- the molding material may, for example a Epo ⁇ xidharz and / or a silicone.
- the molded body 200 may also be referred to as a molded article and is preferably produced by a molding process, for example by compression molding or by transfer molding, in particular, for example, by film-assisted transfer molding.
- the optoelekt ⁇ tronic semiconductor chip 300, the via 400 and the protection diode 500 are preferably already embedded during manufacture of the form ⁇ body 200 into the mold body 200 by the optoelectronic semiconductor chip 300, the via 400 and the protection diode 500 with the material of the molding 200 be transformed.
- An upper surface 301 of the optoelectronic semiconductor chip 300, a top surface 401 of the via 400 and ei ⁇ ne upper surface 501 of the protection diode 500 are each at least partially sawn covered by the material of the molded body 200, but are at least partially at a Obersei ⁇ te 201 of the shaped body 200 free.
- the upper side 301 of the optoelectronic semiconductor chip 300, the upper side 401 of the through contact 400 and the upper side 501 of the protective diode 500 are substantially flush with the upper side 201 of the molded body 200.
- the upper side 201 of the molded body 200, the upper side 301 of the optoelectronic semiconductor chip 300, the upper side 401 of the via 400 and the upper side 501 of the protective diode 500 form an upper side 101 of the composite body 100.
- one of the upper side 301 of the optoelectronic semiconductor chip 300 opposite bottom 302 of the opto ⁇ electronic semiconductor chip 300, one of the top 401th the through contact 400 opposite underside 402 of the contact 400 and one of the top 501 of the Schutzdio ⁇ de 500 opposite underside of the protective diode 500 are at least partially not covered by the material 200 of the molded body 200.
- the bottom 302 of the optoelectronic semiconductor chip 300, the bottom 402 of the via 400 and the underside of the protection diode are 500 on one of the upper surface 201 of the molded body 200 against ⁇ opposite bottom 202 of the mold body 200 each have at least partially exposed.
- the Untersei ⁇ te 302 of the optoelectronic semiconductor chip 300, the Un ⁇ underside 402 of the via 400 and the underside of the protective diode 500 is substantially flush with the bottom 202 of the molding 200 from. 402.
- the optoelectronic semiconductor chip 300 Through contact 400 and the bottom of the protection diode 500, a bottom 102 of the composite body 100.
- the optoelectronic semiconductor chip 300 beispielswei ⁇ se be a LED chip (LED chip) and is for emitting electromagnetic radiation, such as visible light formed.
- the optoelectronic semiconductor chip 300 On its upper side 301, the optoelectronic semiconductor chip 300 has a mesa 330, on which electromagnetic radiation is emitted during operation of the optoelectronic semiconductor chip 300.
- the area of the mesa on the upper side 301 of the optoelectronic semiconductor chip 300 thus forms a radiation emission area of the optoelectronic semiconductor chip 300.
- the optoelectronic semiconductor chip 300 has a first electrical contact 310 on its upper side 301. 300 at its underside 302, the opto-electronic semi-conductor chip on ⁇ a second electrical contact 320th Via the first electrical contact 310 and the second electrical contact 320, an electrical voltage can be applied to the optoelectronic semiconductor chip 300 and an electrical current through the optoelectronic semiconductor chip can be applied. chip 300 to cause the optoelectronic semiconductor chip 300 to emit electromagnetic radiation.
- the optoelectronic semiconductor chip 300 has side flanks extending from the upper side 301 to the lower side 302 of the optoelectronic semiconductor chip 300.
- In ei ⁇ nem edge region 340 between the top 301 and the side flanks of the optoelectronic semiconductor chip 300 of the optoelectronic semiconductor chip 300 may comprise her thoroughlysbe ⁇ -related Schlackegrate 350, which are electrically conductively connected to the second electrical contact 320 on the bottom 302 of the optoelectronic semiconductor chip 300 and For example, up to 20 ym in a direction perpendicular to the top 301 direction over the top 301 of the opto ⁇ electronic semiconductor chip 300 can raise.
- the via 400 has an electrically conductive Materi ⁇ al, for example, a metal or a doped semi-conductor material ⁇ . There is an electrically conductive Verbin ⁇ connection between the top 401 and the bottom 402 of the via 400. As a result, the via 400 forms an extending through the mold body 200 is electrically conductive connection between the upper surface 101 of the composite ⁇ body 100 and the bottom 102 of the composite body 100.
- Semiconductor chip 300 and the protective diode 500 embed in the molding 200, it is also possible, the through-contact 400 only after the formation of the molding 200 by first applying an opening extending from the upper side 201 of the molded body 200 to the underside 202 of the molded body 200 through the molded body 200 and then filling it with an electrically conductive material.
- the protective diode 500 is provided to protect the optoelectronic semiconductor chip 300 of the optoelectronic component 10 from damage due to electrostatic discharges.
- the protective diode 500 is connected in antiparallel to the optoelectronic semiconductor chip 300 in the first optoelectronic component 10 in a manner which will be explained in more detail below.
- the protective tape 500 can be dispensed with in a simplified embodiment.
- a lower insulating layer 150 is disposed at the top 101 of the composite body 100.
- the lower insulation ⁇ layer 150 has an electrically insulating material.
- the lower insulation layer 150 extends over a portion of the top 301 of the optoelectronic semiconductor ⁇ semiconductor chip 300 in the edge region 340 of the top 301 and a adjoining this section portion of the top 201 of the mold body 200.
- the lower insulating layer 150 is in a first between the electrical contact 310 of the optoelectronic semiconductor chip 300 and the top 401 of the via 400 befindli ⁇ chen part of the upper surface 101 of the composite body 100 angeord ⁇ net.
- the lower insulating layer 150 has a perpendicular to the top surface 101 of the composite body 100 dimensioned direction a thickness which is so large that Budapestge ⁇ provides is that through the lower insulating layer 150 be ⁇ covered Schlackegrate 350 completely through the lower insulating layer 150 are covered.
- the application and structuring of the lower insulating layer 150 on the upper side 101 of the composite body 100 can be done for example by a maskenlithografisches procedural ⁇ ren.
- a first upper-side metallization 110 is arranged on a partial region of the upper side 101 of the composite body 100 of the first optoelectronic component 10.
- the first top metallization 110 has an electrically conductive material and forms an electrically conductive connection between the first electrical contact 310 on the top side 301 of the optoelectronic semiconductor chip
- the first top metallization 110 extends in the region between the first electrical contact 310 of the optoelectronic semiconductor chip 300 and the top 401 of the via 400 via the lower insulation layer 150th the lower Iso ⁇ lations slaughter 150 isolates the first Oberencemetallisie ⁇ tion 110 thereby electrically against possible Schlackegrate 350 in the edge region 340 of the top 301 of the optoelectronic see the semiconductor chip 300, and thus also against the second electrical contact 320 of the optoelectronic semiconductor chip 300th
- the application and structuring of the first top-side metallization 110 can be effected, for example, by a mask-lithographic process.
- the first Oberencemetallisie ⁇ tion 110 is applied after the application of the lower insulating layer 150th
- the first opto-electronic device 10 comprises an upper insulating layer 160, extending over the first Obersei ⁇ tenmetallmaschine 110 and in the example shown also on the regions not covered by the first top metallization 110 portions of the lower insulation layer 150 and above all not by the lower insulation layer 150, or the first top metallization 110 covers covered portions of the top surface 101 of the composite body 100.
- the upper insulating layer 160 may also the radiation emission surface in the region of the mesa 330 on the upper side 301 of the optoelectronic semiconductor chip 300 extend. However, this is not mandatory. It is only essential that the upper insulating layer 160, the first top metallization 110 fully covers ⁇ constantly. Parts of the upper side 101 of the composite body 100 may optionally remain uncovered.
- the upper insulation layer 160 has an electrically insulating material. If the upper insulating layer 160, the radiation emitting surface of the optoelectronic semiconductor chip 300 in the area of the mesa 330 is covered at the Obersei ⁇ te 301 of the optoelectronic semiconductor chip 300, the upper insulating layer 160 is optically transparent to light emitted by the optoelectronic semiconductor chip 300 electromagnetic radiation.
- the upper insulation layer 160 may ⁇ for example, SiO x, Al 2 O 3, Ta 2 0s, have an ormocer or a silicone.
- the upper insulating layer 160 is applied during the fabrication of the first optoelectronic device 10 after the first top metallization 110 has been applied.
- a second Obersaymetalli ⁇ tion 120 is disposed above the upper insulating layer 160 of the first optoelekt- tronic device 10.
- the second top metallization 120 comprises an electrically conductive material before Trains t ⁇ well optically reflective.
- the second top-side metallization 120 extends over a large portion of the upper insulation layer 160.
- the second top-side metallization 120 may also extend over a region arranged above the edge region 340 of the top side 301 of the optoelectronic semiconductor chip 300. However, the second top metallization 120 does not extend over the radiation emission ⁇ surface in the region of the mesa 330 at the top 301 of the optoelectronic semiconductor chip 300.
- the second top side metallization 120 completely completes the radiation emission area at the top side 301 of the optoelectronic semiconductor chip 300.
- the second top metallization 120 is electrically insulated by the upper insulating layer 160 against the first Obersei ⁇ tenmetallmaschine 110th
- the second top Capitalization ⁇ Metal 120 can be electrically conductively connected via the angeord- in the edge region 160 of the top 301 of the optoelectronic semiconductor chip 300 Neten Schlackegrate 350 with the second electrical contact 320 of the optoelectronic semiconductor chip 300th
- the Schlackegrate 350 in Randbe ⁇ rich 340 of the top 301 of the optoelectronic semiconductor chip 300 can lations Mrs 160 be insulated against the second Oberactivitymetallisie ⁇ tion 120 by the upper iso-.
- the second top metallization 120 may be disposed and patterned over the top insulating layer 160, for example, by a lithographic process.
- the second top metallization 120 may be applied, for example, by means of a mask lithography method.
- the second Oberopime ⁇ metallization 120 by a lithographic process sets are reasonable in which a photoresist is exposed by a laser ⁇ di rectly.
- the second top metallization 120 may alternatively or additionally be applied or thickened by a galvanic process.
- the second top metallization 120 may be additionally encapsulated with another metal having good optical reflection properties. This encapsulation can be done for example by electroless deposition of the capsule ⁇ metal.
- the second top metallization forming a mirror which increases the reflectivity of the top of the first electro-opto component ⁇ African 10th From the optoelectronic semiconductor chip 300 of the first optoelectronic component ments 10 emitted electromagnetic radiation which is scattered back towards the top 101 of the composite body 100 of the ERS ⁇ th optoelectronic component 10 can, at the second top metallization 120 reflects advantage will be rather absorbed at the upper surface 101 of the Verbundkör ⁇ pers 100th As a result, an efficiency of the first optoelectronic component 10 can increase.
- the second top metallization 120 covers a large part of the organic materials on the upper surface 101 of the composite body 100, in particular the top surface 201 of the molded body 200. This allows the second Oberfitmetalli ⁇ tion 120, an excessive aging of the organic materials of the composite body 100 of the first opto-electronic Prevent component 10, which can increase a lifetime of the first optoelectronic component 10.
- a first Untersei ⁇ tenmetallmaschine 130 is arranged on the underside 102 of the composite body 100 of the first optoelectronic component 10.
- the first Untersei ⁇ tallmaschine 130 extends over the bottom 402 of the via 400 and is electrically connected to the contact ⁇ 400.
- a second Untersei ⁇ tenmetallmaschine 140 is also arranged on the underside 102 of the composite body 100 of the optoelectronic ⁇ ronic device 10.
- the second Unterreteme ⁇ metallization 140 extends across the bottom 302 of the optoelectronic semiconductor chip 300 and is electrically conductively connected to the second electrical contact 320 is connected to the underside 302 of the optoelectronic semiconductor chip 300th
- the second bottom metallization 140 extends over the bottom of the protection diode 500 and is electrically conductively connected to the underside of the Schutzdi ⁇ ode 500 is connected.
- the protective diode 500 is electrically connected in antiparallel to the optoelectronic semiconductor chip 300.
- the first bottom metallization 130 and the second bottom metallization 140 may be applied, for example, by a mask lithography method. In this case, the first bottom metallization 130 and the second bottom metallization 140 may be applied together or in any desired order.
- the first bottom metallization 130 and the second Untersei ⁇ tenmetallmaschine 140 120 can be created before or after the application of the lower insulating layer 150, the first top metallization 110 upper insulating layer 160 and the second top metallization.
- the first bottom side metallization 130 and the second bottom side metallization 140 may serve as electrical contacts of the first optoelectronic device 10.
- the first optoelectronic component 10 can be provided for example as an SMD for surface mounting, for example, for surface mounting by How To ⁇ deraufschmelzlöten (reflow soldering).
- the first optoelectronic component 10 can be made common to a plurality of identical first optoelectronic devices 10 in a panel composite in common Ar ⁇ beits réellen.
- a plurality of optoelectronic semiconductor chips 300, vias 400 and protective diodes 500 are embedded in a common large molded body.
- the positioning of the lower insulation layer 150, the first top metallization 110 upper insulating layer 160, the second top metallization 120 and the Unterremetallmaschineen 130, 140 for each set of an optoelectronic semiconductor chip 300, a via 400 and a protection diode 500 is carried paral ⁇ lel in common processing steps.
- Figure 3 shows a schematic plan view of a second opto-electronic device 20.
- the second optoelectronic ⁇ ULTRASONIC device 20 corresponds, except for the following be ⁇ registered deviations, the first opto-electronic device 10 of Figures 1 and 2.
- Corresponding compo- therefore th in Figure 3 provided with the same reference numerals as in figures 1 and 2.
- the second optoelectronic component 20 can be made with the above explained with reference to Figu ⁇ ren 1 and 2 manufacturing process, provided that the variations and features described below are considered.
- the second optoelectronic component 20 differs from the first opto-electronic device 10 in that the second top metallization 120 directly to the radiation emitting surface of said opto-electro ⁇ African semiconductor chip 300 forming in the second optoelectronic component 20 Mesa 330 at the top 301 of the optoelectronic semiconductor chip 300 he ⁇ stretches.
- the second opto-electronic construction element 20 at its top particularly fewuitenbe ⁇ rich which are designed to be reflective neither light-emitting nor.
- the second opto ⁇ electronic component 20 only very low absorption losses during operation due to absorption of electromagnetic radiation at the top of the second optoelectronic component 20.
- the arrangement of the second upper-side metallization 120 can be carried out in the manner explained below: First, a layer of a photoresist is placed on the upper insulating layer 160. Subsequently, the optoelectronic semiconductor chip 300 of the second optoelekt ⁇ tronic device 20 is operated, so that the optoelectronic semiconductor chip 300 emits at its Strahlungsemissionsflä ⁇ surface in the area of the mesa 330 at the top 301 ⁇ electro magnetic radiation.
- the un- exposed parts of the layer of photoresist are removed while the exposed portion of the layer of photoresist over the radiation emitting surface of the optoelectronic semiconductor ⁇ semiconductor chip 300 on the upper insulating layer 160 remains ⁇ ver.
- FIG. 4 shows a schematic sectional side view of a third optoelectronic component 30.
- the third optoelectronic component 30 has great correspondences with the first optoelectronic component 10 of FIGS. 1 and 2 and with the second optoelectronic component 20 of FIG. Corresponding components are provided in FIG. 4 with the same reference numerals as in FIGS. 1 to 3.
- the third optoelectronic component 30 can be constructed according to the method for producing the first optoelectronic component 10 explained with reference to FIGS. 1 and 2 or to the method explained with reference to FIG Production of the second optoelectronic component 20 are produced, wherein the features explained below are to be considered.
- the second top-side metallization 120 is formed in a direction perpendicular to the top side 101 of the composite body 100 with a large thickness. This can be achieved for example by a galvani ⁇ cal generation or thickening of the second top metallization 120.
- the see optoelectronic semiconductor chip 300 120 comprises said second top Capitalization Metal ⁇ a recess.
- the second Oberchieme ⁇ metallization 120 circumscribes the radiation emitting surface of the optoelectronic semiconductor chip 300 thereby completely.
- the second top metallization 120 surrounds a bounded region 170 completely, in which the radiation-emitting surface in the area of the mesa is integrally ⁇ allocates 330 to the upper ⁇ page 301 of the optoelectronic semiconductor chip 300th
- the second top-side metallization 120 forms a reflector enclosing the bounded region 170, which can cause a bundling of the electromagnetic radiation emitted by the optoelectronic semiconductor chip 300.
- a wavelength-Ma ⁇ TERIAL 600 is arranged in the second from the top metallization 120 .
- the wavelength-converting material 600 may comprise, for example, a matrix material and wavelength-converting particles embedded in the matrix material.
- the matrix material may for example comprise a silicone.
- the wavelength-Mate ⁇ rial 600 may have been arranged, for example, by a metering in the circumscribed area 170th
- the wavelength converting material 600 is to pre ⁇ see to convert light emitted by the optoelectronic semiconductor chip 300 electromagnetic radiation at least partly into electromagnetic radiation of a different wavelength.
- the wavelength-converting material 600 may be configured to convert electromag netic ⁇ radiation having a wavelength from the blue o- the ultraviolet spectral region into electromagnetic radiation with a wavelength in the yellow areas of the spectrum ⁇ rich.
- a mixture of converted and unconverted electromagnetic radiation may have a white color impression.
- first optoelectronic component 20 second optoelectronic component 30 third optoelectronic component
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2017518105A JP2017535942A (ja) | 2014-11-04 | 2015-11-03 | オプトエレクトロニクス部品およびその製造方法 |
DE112015005004.3T DE112015005004A5 (de) | 2014-11-04 | 2015-11-03 | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
CN201580060152.3A CN107078192A (zh) | 2014-11-04 | 2015-11-03 | 光电子部件及用于制造所述光电子部件的方法 |
KR1020177011514A KR20170081177A (ko) | 2014-11-04 | 2015-11-03 | 광전자 구성요소 및 그 생산 방법 |
US15/523,812 US20170323872A1 (en) | 2014-11-04 | 2015-11-03 | Optoelectronic component and method of producing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102014116079.7A DE102014116079A1 (de) | 2014-11-04 | 2014-11-04 | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102014116079.7 | 2014-11-04 |
Publications (1)
Publication Number | Publication Date |
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WO2016071307A1 true WO2016071307A1 (de) | 2016-05-12 |
Family
ID=54608492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2015/075517 WO2016071307A1 (de) | 2014-11-04 | 2015-11-03 | Optoelektronisches bauelement und verfahren zu seiner herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170323872A1 (de) |
JP (1) | JP2017535942A (de) |
KR (1) | KR20170081177A (de) |
CN (1) | CN107078192A (de) |
DE (2) | DE102014116079A1 (de) |
WO (1) | WO2016071307A1 (de) |
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US20170323872A1 (en) | 2017-11-09 |
DE112015005004A5 (de) | 2017-08-03 |
CN107078192A (zh) | 2017-08-18 |
KR20170081177A (ko) | 2017-07-11 |
JP2017535942A (ja) | 2017-11-30 |
DE102014116079A1 (de) | 2016-05-04 |
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