WO2016047899A1 - Composition de résine époxyde pour encapsulation d'un dispositif à semi-conducteurs et dispositif à semi-conducteurs encapsulé à l'aide de cette dernière - Google Patents

Composition de résine époxyde pour encapsulation d'un dispositif à semi-conducteurs et dispositif à semi-conducteurs encapsulé à l'aide de cette dernière Download PDF

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WO2016047899A1
WO2016047899A1 PCT/KR2015/006600 KR2015006600W WO2016047899A1 WO 2016047899 A1 WO2016047899 A1 WO 2016047899A1 KR 2015006600 W KR2015006600 W KR 2015006600W WO 2016047899 A1 WO2016047899 A1 WO 2016047899A1
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epoxy resin
resin composition
sealing
semiconductor device
silicone polymer
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PCT/KR2015/006600
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English (en)
Korean (ko)
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한승
김소윤
나우철
이은정
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삼성에스디아이 주식회사
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Publication of WO2016047899A1 publication Critical patent/WO2016047899A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Definitions

  • the present invention relates to an epoxy resin composition for semiconductor device sealing and a semiconductor device sealed using the same.
  • a method of sealing a semiconductor device with an epoxy resin composition has been performed for the purpose of protecting the semiconductor device from external environments such as moisture or mechanical impact.
  • light and small size reduction of semiconductor packages is essential to increase mounting efficiency per unit volume of semiconductor packages mounted therein.
  • the warpage of the package may be warped due to the difference in coefficient of thermal expansion between the semiconductor chip, the lead frame and the epoxy resin composition constituting the package according to the light and thin portion of the package, and the heat shrinkage and curing shrinkage of the epoxy resin composition sealing the package. have.
  • the method of lowering content of the inorganic filler with low thermal expansion coefficient is common.
  • the package In the process of mounting a semiconductor package on a substrate, the package is exposed to a high temperature (260 ° C.). At this time, peeling of the inside of the package or cracking of the outside of the package may occur due to the rapid volume expansion of moisture present in the package. Therefore, in order to prevent this, lowering the moisture absorption rate of the sealing epoxy resin composition itself is a basic requirement for ensuring reliability.
  • the content of the inorganic filler is lowered to improve the bending property, the moisture absorption of the composition is inevitably increased, which inevitably lowers the reliability of the package. Therefore, in the case of a package having a low reliability, there is a restriction in lowering the content of the inorganic filler in order to improve the bending property.
  • Background art of the present invention is disclosed in Korea Patent Publication No. 2009-0073760.
  • An object of the present invention is to use an epoxy resin composition for sealing semiconductor devices, even when used in a semiconductor package that shrinks greatly when sealing, the epoxy resin for semiconductor device sealing can form a sealing layer with a high curing shrinkage rate and high warpage and at the same time a low moisture absorption rate. It is to provide a composition.
  • Another object of the present invention is to provide an epoxy resin composition for semiconductor element sealing that can improve reliability even when used in a semiconductor package in which shrinkage occurs when sealing with an epoxy resin composition for semiconductor element sealing.
  • the epoxy resin composition for sealing a semiconductor device of the present invention may include an epoxy resin, a curing agent, an inorganic filler, and crosslinked non-rubber silicone polymer particles.
  • the semiconductor device of the present invention may be sealed with the epoxy resin composition for sealing the semiconductor device.
  • the present invention is an epoxy resin composition for semiconductor element sealing epoxy resin composition for forming a sealing layer having a high curing shrinkage rate and high warpage, and at the same time a low moisture absorption rate even when used in a semiconductor package that seals significantly when sealing with an epoxy resin composition for semiconductor element sealing Provided.
  • the present invention provides an epoxy resin composition for semiconductor element sealing that can improve reliability even when used in a semiconductor package in which shrinkage occurs when sealing with an epoxy resin composition for semiconductor element sealing.
  • FIG. 1 is a cross-sectional view of a semiconductor device of one embodiment of the present invention.
  • the epoxy resin composition for sealing a semiconductor device of one embodiment of the present invention includes an epoxy resin, a curing agent, an inorganic filler, and crosslinked non-rubber silicone polymer particles.
  • the epoxy resin composition for sealing a semiconductor device of an embodiment of the present invention may include a cross-linked non-rubber silicone polymer particle to maintain a moisture absorption rate but increase a curing shrinkage rate. Therefore, by being used in a semiconductor device in which the curing shrinkage rate is large during sealing after sealing, for example, an exposed moldable under fill (MUF) type semiconductor device, warpage can be suppressed and an increase in moisture absorption can be prevented.
  • Exposed MUF is a bump 30 is formed on a substrate 10 including a PCB or the like as shown in FIG.
  • a semiconductor chip 20 is formed on the bump 30, and an epoxy resin composition 40 for sealing a semiconductor device.
  • the semiconductor package may be sealed with an epoxy resin, and the semiconductor package may have a shape such that the epoxy resin composition 40 does not cover the semiconductor chip 20.
  • the curable shrinkage of the resin composition may be reduced due to the inorganic fillers, which may cause warpage of the semiconductor package.
  • the curing shrinkage rate is increased, but the moisture absorption rate is increased, and reliability due to sealing of the semiconductor cannot be expected.
  • the epoxy resin may be included in the epoxy resin composition for sealing a semiconductor device to form a sealing layer after curing.
  • the epoxy resin is an epoxy resin having two or more epoxy groups, and may include a liquid epoxy resin at room temperature (eg, about 20 to about 30 ° C.) in consideration of the viscosity and use of the epoxy resin composition.
  • epoxy resins include phenol novolac epoxy resins, cresol novolac epoxy resins, biphenyl epoxy resins, phenol aralkyl epoxy resins, polyfunctional epoxy resins, naphthol novolac epoxy resins and bisphenol A / bisphenol F.
  • Novolak-type epoxy resins of bisphenol AD glycidyl ethers of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resins, dicyclopentadiene epoxy resins, phenols or alkyl phenols, hydroxybenzaldehyde and One or more of the epoxy resins obtained by epoxidizing the condensate of may be included.
  • the epoxy resin may be a phenol aralkyl type epoxy resin of Formula 1 below:
  • Epoxy resins may be used alone or as an addition compound made by preliminary reaction such as a melt master batch with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent.
  • a curing agent such as a melt master batch
  • other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent.
  • Epoxy resin may be included alone or in combination of two or more, epoxy resin is about 2 to about 20% by weight, for example about 3 to about 18% by weight, specifically about 10 to about 17.5% by weight of the epoxy resin composition May be included. In the above range, the flowability, flame retardancy, and reliability of the epoxy resin composition may be good.
  • the curing agent is a curing agent for epoxy resin, and may include a solid or liquid curing agent.
  • the curing agent is a phenol aralkyl type phenol resin, a phenol phenol novolak phenol resin, a xylox phenol resin, a cresol novolak phenol resin, a naphthol phenol resin, a terpene phenol resin, a polyfunctional phenol resin, dicyclopentadiene Novolak-type phenol resin synthesized from bisphenol A and resol, polyhydric phenol compound including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydride including maleic anhydride and phthalic anhydride, and metaphenyl It may include one or more of aromatic amines, such as rendiamine, diaminodiphenylmethane, diaminodiphenylsulfonium.
  • the curing agent may be a phenol aralkyl type phenolic resin of Formula 2 below:
  • the curing agent may also be used as an addition compound made by preliminary reaction such as melt master batch with other components such as epoxy resin.
  • the curing agent may be included alone or in combination of two or more, and the curing agent may be included in about 0.5 to about 13% by weight, for example, about 1 to about 12% by weight, specifically about 8 to about 11.5% by weight of the epoxy resin composition. have.
  • the unreacted epoxy group and phenolic hydroxyl group in the above range does not generate a large amount may be excellent in reliability.
  • the mixing ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of the mechanical properties and the moisture resistance reliability in the package.
  • the chemical equivalent ratio of epoxy resin to hardener may be about 0.95 to about 2, for example about 1 to about 1.75.
  • Inorganic fillers can increase the mechanical properties and lower the stress of the composition.
  • Inorganic fillers are particles formed of non-silicone polymers, for example fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide It may include one or more of the glass fibers.
  • the inorganic filler uses molten silica having a low coefficient of linear expansion.
  • Fused silica refers to amorphous silica having a specific gravity of about 2.3 kW or less, including amorphous silica made by melting crystalline silica or synthesized from various raw materials.
  • the inorganic filler is about 50 to about 99 weight percent of spherical molten silica having an average particle diameter of about 5 to about 30 micrometers, for example, about 65 to about 95 weight percent and spherical melting of about 0.001 to about 1 micrometer.
  • a molten silica mixture including about 1 to about 50 weight percent silica, for example about 5 to about 35 weight percent, may be included to about 40 to about 100 weight percent relative to the total filler.
  • the maximum particle diameter can be adjusted to any one of about 45 ⁇ m, about 55 ⁇ m, and about 75 ⁇ m according to the application.
  • conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material having a small amount of polar foreign matter mixed therein.
  • the amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength.
  • the inorganic filler may be included in about 20 to about 95% by weight, for example about 20 to about 60% by weight of the epoxy resin composition. In the above range, it is possible to ensure the flame retardancy, fluidity and reliability of the epoxy resin composition.
  • the cross-linked non-rubber silicone polymer particles may be included in the epoxy resin composition together with the inorganic filler to increase the curing shrinkage of the resin composition and prevent the increase of hygroscopicity, thereby increasing the reliability in sealing the semiconductor device.
  • the cross-linked non-rubber silicone polymer particles may be included in the composition for encapsulation together with the inorganic filler to increase the curing shrinkage of the composition for encapsulation and to minimize the increase in the moisture absorption rate.
  • the crosslinked non-rubber silicone polymer particles in the encapsulation composition the inorganic filler may be included in a weight ratio of about 1: 0.5 to about 1:10, for example about 1: 0.6 to about 1: 6.
  • the crosslinked non-rubber silicone polymer particles in the encapsulation composition is about 1: 0.5, 1: 1, 1: 1.5, 1: 2, 1: 2.5, 1: 3, 1: 3.5, 1: 4, 1: 4.5, 1: 5, 1: 5.5, 1: 6, 1: 6.5, 1: 7, 1: 7.5, 1: 8, 1: 8.5, 1: 9, 1: 9.5 or 1: It may be included in a weight ratio of 10.
  • the cross-linked non-rubber silicone polymer particles: inorganic filler in the composition for encapsulation may be in the range of at least one of the above ratios and at most one of the above ratios. It can be effective to increase the curing shrinkage in the above range.
  • the crosslinked non-rubber silicone polymer particles do not place any particular limitation on the shape.
  • the particles may be spherical, hemispherical, amorphous, or the like, and have an average particle diameter of about 1 ⁇ m to about 30 ⁇ m, for example, about 2 ⁇ m to 10 ⁇ m. It can be used in the composition for sealing a semiconductor device in the above range.
  • the average particle size may refer to a particle size D50 corresponding to about 50% by weight of the passing mass when the particle size accumulation curve is drawn according to the particle size using a PSA (Particle Size Analysis) device.
  • the crosslinked non-rubber silicone polymer particles can be made of non-rubber polymers having no rubbery properties as non-core-shell type particles having no core-shell type.
  • it may be made of a siloxane polymer, and specifically, may be formed of polydimethylsiloxane, polymethylphenylsiloxane, polydiphenylsiloxane, or the like.
  • the cross-linked non-rubber silicone polymer particles have a specific surface area of about 10 m 2 / g to about 40 m 2 / g, specifically about 15 m 2 / g to about 35 m 2 / g And, more specifically, from about 20 m 2 / g to about 30 m 2 / g. It can raise the hardening shrinkage rate of the composition for sealing in the said range, and can reduce the moisture absorption rate.
  • the cross-linked non-rubber silicone polymer particles have a line seed oil absorption rate of about 50 ml / 100g to about 70 ml / 100g, specifically about 55 ml / 100g to about 65 ml / 100g
  • the moisture absorption rate of the composition for sealing in the said range can be reduced, and the reliability at the time of sealing a semiconductor element can be improved.
  • the true specific gravity of the non-rubber silicone polymer particles of the present invention is about 1 or more, for example about 1.0 to about 1.5, specifically about 1.2 to about 1.4. In the above range, the curing shrinkage ratio of the composition for encapsulation can be increased, and the reliability during sealing of the semiconductor device can be improved.
  • the crosslinked non-rubber silicone polymer particles may be included in about 1 to about 50 weight percent, such as about 5 to about 45 weight percent, in the epoxy resin composition.
  • the crosslinked non-rubber silicone polymer particles are about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16 in the epoxy resin composition. , 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41 , 42, 43, 44, 45, 46, 47, 48, 49 or 50% by weight.
  • the crosslinked non-rubber silicone polymer particles may be included in the range of about one or more of the above values and about one or less of the above values in the epoxy resin composition. It is possible to secure the flame retardancy, fluidity and reliability of the epoxy resin composition in the above range.
  • the epoxy resin composition may further include additives such as a coupling agent, a release agent, a stress relaxer, a crosslinking enhancer, a leveling agent, and a coloring agent.
  • the additive may be included in about 0.1 to about 10% by weight, for example about 0.1 to about 3% by weight of the epoxy resin composition.
  • the coupling agent may use one or more selected from the group consisting of epoxysilane, aminosilane, mercaptosilane, alkylsilane and alkoxysilane, but is not limited thereto.
  • the coupling agent may be included in about 0.1 to about 1% by weight of the epoxy resin composition.
  • the release agent may use one or more selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt.
  • the release agent may be included in about 0.1 to about 1% by weight of the epoxy resin composition.
  • the stress relieving agent may use one or more selected from the group consisting of modified silicone oils, silicone elastomers, silicone powders and silicone resins, but is not limited thereto.
  • the stress relieving agent may be contained in about 0.1% to about 5% by weight, specifically, about 0.1% to about 3% by weight, more specifically about 0.1% to about 1% by weight of the epoxy resin composition, and may be optionally contained. Both may be contained.
  • the modified silicone oil is preferably a silicone polymer having excellent heat resistance, and the total epoxy resin composition by mixing one or two or more kinds of a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, and a silicone oil having a carboxyl functional group. From about 0.05 to about 1.5 weight percent.
  • the silicon powder may have a central particle diameter of about 15 ⁇ m or less.
  • the moldability of an epoxy resin composition does not fall in the said range.
  • the silicon powder may be contained in about 0.1 to about 5% by weight based on the total resin composition.
  • the colorant is used for laser marking and the like, and carbon black, titanium oxide, titanium nitride, iron oxide, mica and the like can be used.
  • the colorant may be included in about 0.05% to about 4.0% by weight of the epoxy resin composition.
  • the epoxy resin composition for sealing a semiconductor device of the present invention may further include a curing catalyst.
  • a curing catalyst By further including a curing catalyst, the curing rate of the epoxy resin composition is increased and the degree of curing is increased.
  • tertiary amines As the curing catalyst, tertiary amines, organometallic compounds, organophosphorus compounds, imidazoles, and boron compounds can be used, and tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, and tri (dimethyl).
  • organic metal compounds include chromium acetylacetonate, Zinc acetylacetonate, nickel acetylacetonate, and the like
  • organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, triphenylphosphine and triphenylphosphine triphenylborane , Triphenylphosphine-1,4-benzoquinone adduct, and the like
  • imidazoles include 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, and 2 - methyl-1-vinyl.
  • Boron compounds include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroboranetriethylamine And tetrafluoroboraneamine.
  • the curing catalyst may be included alone or in mixture of two or more kinds, and the curing catalyst may be an adduct made by prereacting with an epoxy resin or a curing agent.
  • the curing catalyst may be included in about 0.01 to about 2% by weight of the epoxy resin composition, for example, about 0.02 to about 1.5% by weight, specifically about 0.05 to about 1.5% by weight. In the above range, the curing reaction time is not delayed, and the fluidity of the composition can be ensured.
  • the epoxy resin composition may have a viscosity of about 0.1 to about 2.0 poise at about 150 °C. Within this range, it is possible to fill sufficiently between narrow gaps.
  • the epoxy resin composition has a curing shrinkage of about 0.20% to about 1.50%, specifically about 0.70% to about 1.50%, more specifically about 0.81% to about 1.50%.
  • the epoxy resin composition may have a cure shrinkage of about 0.20, 0.30, 0.40, 0.50, 0.60, 0.70, 0.80, 0.90, 1.00, 1.10, 1.20, 1.30, 1.40 or 1.50%.
  • the epoxy resin composition has a moisture absorption of about 0.10 to about 0.50%, specifically about 0.10% to about 0.40%, more specifically about 0.10% to about 0.36%.
  • the epoxy resin composition may have a curing shrinkage in a range of about one or more of the above numerical values and about one or less of the above numerical values.
  • the epoxy resin composition has a moisture absorption of about 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28 , 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49 or 50%.
  • the epoxy resin composition may have a curing shrinkage of about one or more of the above values and about one or less of the above values. When used in the exposed MUF package in the above range it is possible to lower the warpage and increase the reliability.
  • the method of preparing the epoxy resin composition is not particularly limited, but the components contained in the composition are uniformly mixed by using a Henschel mixer or a Rödige mixer, and then melted at about 90 to about 120 ° C. with a roll mill or kneader. It can be prepared by kneading, cooling and grinding.
  • a low pressure transfer molding method may be most commonly used. However, it can also be molded by an injection molding method or a casting method.
  • a semiconductor device of a copper lead frame, an iron lead frame, or a lead frame pre-plated with at least one material selected from the group consisting of palladium with nickel and copper on the lead frame, or an organic laminate frame can be manufactured. Can be.
  • the semiconductor device of the present invention may be sealed with the epoxy resin composition for semiconductor device sealing of the embodiment of the present invention, and there is no particular limitation, but may include an exposed MUF package.
  • the semiconductor device 100 may include a substrate 10, a bump 30 formed on the substrate 10, a semiconductor chip 20 on the bump 30, and a substrate 10. And a semiconductor device sealing layer 40 for sealing the bumps 30.
  • the semiconductor device sealing layer may be formed of the epoxy resin composition for semiconductor device sealing according to the embodiment of the present invention.
  • (A) epoxy resin phenol aralkyl type epoxy resin (NC-3000, Nippon Kayaku)
  • Curing agent phenol aralkyl type phenolic resin (HE200C-10, Air Water)
  • (C) Inorganic filler 9: 1 weight ratio mixture of spherical molten silica with an average particle diameter of 18 micrometers: spherical molten silica with an average particle diameter of 0.5 micrometer
  • the resin composition of the present invention can increase the curing shrinkage rate, minimize the increase in the moisture absorption rate, and can increase the reliability when used in the semiconductor package.
  • Comparative Example 1-2 which does not include cross-linked non-rubber silicone polymer particles, had a problem of high moisture absorption or poor curing shrinkage and warpage, and Comparative Example 3 including rubber-type silicone polymer particles There was a problem that the fluidity is sharply lowered and the reliability is sharply lowered.
  • Hardening shrinkage (%): Molded specimens (125 mm x 12.6 mm x 6.4 mm) were transferred using a transfer molding press at 70 kgf / cm 2 at 175 ° C using ASTM molds for flexural strength specimen fabrication. Got it. The obtained specimen was placed in an oven at 170 ° C. to 180 ° C. for 4 hours, post-cured (PMC: post molding cure), and then cooled. The length of the specimen was measured by a caliper. The cure shrinkage was calculated from the following equation 1.
  • A is the length of the specimen obtained by transfer molding pressing the epoxy resin composition at 175 °C, 70kgf / cm 2
  • B is a specimen obtained after curing the specimen at 170 ⁇ 180 °C 4 hours, and cooled Is the length of).
  • TMA thermomechanical analyzer
  • Hygroscopicity A disk having a diameter of 50 mm and a thickness of 1.0 mm by molding an epoxy resin composition under conditions of a mold temperature of 170-180 ° C., a transfer pressure of 1000 psi, a feed rate of 0.5-1 cm / s, and a curing time of 120 seconds. Cured specimens of form were obtained. After the obtained specimens were put in an oven at 170-180 ° C. for 4 hours and then post-cured (PMC: post molding cure), they were left at 85 ° C. and 85 RH% relative humidity for 168 hours, and then the weight change due to moisture absorption was measured. The moisture absorption was calculated by 2.
  • C is the weight of the test piece before moisture absorption
  • D is the weight of the test piece after moisture absorption.
  • a low pressure transfer molding machine was used to inject an epoxy resin composition into a mold for spiral flow measurement according to EMMI-1-66 at a molding temperature of 175 ° C. and a molding pressure of 70 kgf / cm 2 , followed by a flow field. (Unit: inch) was measured. The higher the measured value, the better the fluidity.
  • Epoxy resin composition was molded by transfer molding at 175 ° C. for 70 seconds using an MPS (Multi Plunger System) molding machine to expose 20 mm long, 20 mm wide, and 1 mm thick exposed MUF (molded under fill) of copper metal elements.
  • the package was produced. Thereafter, the produced package was post-cured at 175 ° C. for 4 hours and then cooled to 25 ° C.
  • the exposed MUF package was then measured using a non-contact laser meter to measure the height difference between the center and the edge of the diagonal of the upper surface. The smaller the bending, the better the bending characteristics.

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne une composition de résine époxyde pour encapsuler un dispositif semi-conducteur, et un dispositif à semi-conducteurs encapsulé à l'aide de celle-ci, la composition de résine époxyde contenant une résine époxyde, un agent de durcissement, une charge minérale, et des particules polymères réticulés de silicium de type non caoutchouc.
PCT/KR2015/006600 2014-09-23 2015-06-26 Composition de résine époxyde pour encapsulation d'un dispositif à semi-conducteurs et dispositif à semi-conducteurs encapsulé à l'aide de cette dernière WO2016047899A1 (fr)

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KR10-2014-0127060 2014-09-23
KR1020140127060A KR101737179B1 (ko) 2014-09-23 2014-09-23 반도체 소자 밀봉용 에폭시수지 조성물 및 이를 사용하여 밀봉된 반도체 소자

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WO2016047899A1 true WO2016047899A1 (fr) 2016-03-31

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KR100882533B1 (ko) * 2007-12-31 2009-02-06 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물　및 이를 이용한 반도체 소자
KR20100072720A (ko) * 2008-12-22 2010-07-01 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
KR20120138679A (ko) * 2011-06-14 2012-12-26 닛토덴코 가부시키가이샤 봉지용 시트 및 광반도체 소자 장치
KR20130018721A (ko) * 2010-03-02 2013-02-25 미츠비시 가스 가가쿠 가부시키가이샤 수지 조성물, 프리프레그 및 적층판

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JP2010059241A (ja) * 2008-09-01 2010-03-18 Shin-Etsu Chemical Co Ltd 半導体装置封止用組成物

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KR20090006788A (ko) * 2007-07-12 2009-01-15 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 프리프레그 및 라미네이트
KR100882533B1 (ko) * 2007-12-31 2009-02-06 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물　및 이를 이용한 반도체 소자
KR20100072720A (ko) * 2008-12-22 2010-07-01 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
KR20130018721A (ko) * 2010-03-02 2013-02-25 미츠비시 가스 가가쿠 가부시키가이샤 수지 조성물, 프리프레그 및 적층판
KR20120138679A (ko) * 2011-06-14 2012-12-26 닛토덴코 가부시키가이샤 봉지용 시트 및 광반도체 소자 장치

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