WO2016031437A1 - Active-light-sensitive or radiation-sensitive resin composition, resist film, patterning method, resist-applying mask blank, photomask, method for manufacturing electronic device, and electronic device - Google Patents

Abstract

An active-light-sensitive or radiation-sensitive resin composition containing a compound (A) that can be represented by general formula (I), an alkali-soluble resin (B), and a crosslinker (C), wherein the compound (A) constitutes at least 5 mass% of the total solid content of the active-light-sensitive or radiation-sensitive resin composition; a resist film using same; a patterning method; a resist-applying mask blank; a photomask; a method for manufacturing an electronic device; and an electronic device. (I) R₁ through R₁₅ each independently represent either a hydrogen atom or a substituent, with at least one of R₁ through R₁₅ representing a substituent that contains an alcoholic hydroxyl. Two or more of R₁ through R₅ may bond to each other to form a ring, as may two or more of R₆ through R₁₀ and two or more of R₁₁ through R₁₅. X^- represents an anion selected from the group consisting of sulfonate anions, carbonate anions, bis(alkylsulfonyl)amide anions, tris(alkylsulfonyl)methide anions, and hexafluorophosphate anions.

Description

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, resist-coated mask blank, photomask, electronic device manufacturing method, and electronic device

The present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition suitably used in an ultramicrolithography process such as the manufacture of VLSI and high-capacity microchips and other fabrication processes, and a resist using the same. The present invention relates to a film, a pattern forming method, a resist-coated mask blank, a photomask, an electronic device manufacturing method, and an electronic device.

Conventionally, in the manufacturing process of semiconductor devices such as IC and LSI, fine processing by lithography using a photoresist composition has been performed, and development of resins and additives suitable for various lithography techniques has been performed.

In recent years, with the high integration of integrated circuits, the formation of ultrafine patterns in the submicron region and the quarter micron region has been required. Along with this, the trend of shortening the exposure wavelength from g-line to i-line and further to excimer laser light has been seen, and at present, lithography using electron beams and X-rays is also being developed.

These electron beams, X-rays, or EUV light lithography are positioned as next-generation or next-generation pattern forming techniques, and highly sensitive and high-resolution resist compositions are desired.

Further, not only the mainstream positive type, but also a negative chemically amplified resist composition for pattern formation by alkali development has been developed. This is because, in the manufacture of semiconductor elements and the like, there is a demand for forming patterns having various shapes such as lines, trenches, holes, and the like, but there are patterns that are difficult to form with current positive resist compositions. Various acid generators applicable to such negative chemically amplified resist compositions have also been developed (for example, Patent Documents 1 to 3).

JP 2007-232769 A JP 2007-210904 A JP 2011-95700 A

However, from the viewpoint of overall performance as a resist, it is actually difficult to find an appropriate combination of resin, photoacid generator, basic compound, additive, solvent, etc. to be used. When forming a fine pattern such as a line pattern having a width of 100 nm or less by a negative pattern forming method, there is a demand for a resist composition with various performances further improved.

The present invention has been made in view of the present situation, and the object thereof is to have excellent solvent solubility and a fine pattern (for example, a line pattern having a line width of 100 nm or less) by a cross-linked negative pattern forming method. Actinic ray-sensitive or radiation-sensitive resin composition that achieves all of high sensitivity, high resolution, excellent roughness performance, excellent pattern shape, and excellent scum performance in a high dimension, and An object of the present invention is to provide a resist film, a pattern forming method, a resist coating mask blank, a photomask, an electronic device manufacturing method, and an electronic device.

The present invention has the following configuration, whereby the above object of the present invention is achieved.

[1]
(A) An actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following general formula (I), (B) an alkali-soluble resin, and (C) a crosslinking agent,
The actinic ray-sensitive or radiation-sensitive resin composition, wherein the content of the compound (A) is 5% by mass or more based on the total solid content of the actinic-ray-sensitive or radiation-sensitive resin composition.

R ₁ to R ₁₅ each independently represents a hydrogen atom or a substituent, and at least one of R ₁ to R ₁₅ represents a substituent containing an alcoholic hydroxyl group. Two or more of R ₁ to R ₅ , two or more of R ₆ to R ₁₀ , and two or more of R ₁₁ to R ₁₅ may be bonded to each other to form a ring.
X ⁻ represents an anion selected from the group consisting of a sulfonate anion, a carboxylate anion, a bis (alkylsulfonyl) amide anion, a tris (alkylsulfonyl) methide anion, and a hexafluorophosphate anion.
[2]
The actinic ray-sensitive or radiation-sensitive resin composition according to [1] above, wherein the anion as X ⁻ is an anion having a cyclic organic group.
[3]
The actinic ray-sensitive or radiation-sensitive resin composition according to the above [1] or [2], wherein at least one of R ₁ to R ₁₅ is an alkyl group substituted with an alcoholic hydroxyl group.
[4]
The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [3] above, wherein at least one of R ₁ to R ₁₅ is a hydroxymethyl group.
[5]
The activity according to any one of [1] to [4] above, wherein at least one of R ₂ , R ₄ , R ₇ , R ₉ , R ₁₂ and R ₁₄ is a substituent containing an alcoholic hydroxyl group. A light-sensitive or radiation-sensitive resin composition.
[6]
The actinic ray-sensitive or radiation-sensitive material according to any one of [1] to [5] above, wherein the alkali-soluble resin (B) is a resin having a repeating unit represented by the following general formula (II): Resin composition.

Where
R ₂ represents a hydrogen atom, an optionally substituted methyl group, or a halogen atom,
B ′ represents a single bond or a divalent linking group,
Ar ′ represents an aromatic ring group,
m represents an integer of 1 or more.
[7]
The actinic ray-sensitive or radiation-sensitive material according to any one of [1] to [6] above, wherein the crosslinking agent (C) is a compound having two or more hydroxymethyl groups or alkoxymethyl groups in the molecule. Resin composition.
[8]
A resist film formed from the actinic ray-sensitive or radiation-sensitive resin composition described in any one of [1] to [7] above.
[9]
(I) a step of forming the resist film according to [8] above,
(Ii) A pattern forming method including a step of exposing a resist film, and (iii) developing the exposed resist film using a developer to form a pattern.
[10]
The pattern forming method according to [9], wherein the developer in the step (iii) is a developer containing an organic solvent.
[11]
The pattern forming method according to [10], wherein the exposure is performed using an X-ray, an electron beam, or EUV light.
[12]
Resist-coated mask blanks coated with the resist film described in [8] above.
[13]
A photomask obtained by exposing and developing the resist-coated mask blank described in [12].
[14]
An electronic device manufacturing method comprising the pattern forming method according to any one of [9] to [11] above.
[15]
The electronic device manufactured by the manufacturing method of the electronic device as described in said [14].

According to the present invention, in addition to excellent solvent solubility, in the formation of a fine pattern (for example, a line pattern having a line width of 100 nm or less) by a crosslinking negative pattern forming method, high sensitivity, high resolution, and excellent roughness Actinic ray-sensitive or radiation-sensitive resin composition that achieves all of performance, excellent pattern shape, and excellent scum performance at a high level, and a resist film, a pattern forming method, and a resist-coated mask blank using the same , A photomask, an electronic device manufacturing method, and an electronic device can be provided.

Hereinafter, embodiments of the present invention will be described in detail.
In the description of the group (atomic group) in this specification, the notation which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

Here, “active light” or “radiation” means, for example, an emission line spectrum of a mercury lamp, far ultraviolet rays represented by an excimer laser, extreme ultraviolet rays (EUV light), X-rays, electron beams (EB), and the like. . In the present invention, light means actinic rays or radiation.

In addition, “exposure” here means not only exposure by far ultraviolet rays, extreme ultraviolet rays, X-rays, EUV light, etc. represented by mercury lamps and excimer lasers, but also particle beams such as electron beams and ion beams, unless otherwise specified. Include drawing in exposure.

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention comprises (A) a compound represented by the following general formula (I), (B) an alkali-soluble resin, and (C) a cross-linking agent. An actinic ray-sensitive or radiation-sensitive resin composition, wherein the content of the compound (A) is 5% by mass or more based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

R ₁ to R ₁₅ each independently represents a hydrogen atom or a substituent, and at least one of R ₁ to R ₁₅ represents a substituent containing an alcoholic hydroxyl group. Two or more of R ₁ to R ₅ , two or more of R ₆ to R ₁₀ , and two or more of R ₁₁ to R ₁₅ may be bonded to each other to form a ring.
X ⁻ represents an anion selected from the group consisting of a sulfonate anion, a carboxylate anion, a bis (alkylsulfonyl) amide anion, a tris (alkylsulfonyl) methide anion, and a hexafluorophosphate anion.

According to the actinic ray-sensitive or radiation-sensitive resin composition, the composition has excellent solvent solubility and high sensitivity, high resolution, and excellent in forming a fine pattern (for example, a line pattern with a line width of 100 nm or less). An actinic ray-sensitive or radiation-sensitive resin composition having all of roughness performance, excellent pattern shape, and excellent scum performance in a high dimension can be obtained. The reason is not clear, but is estimated as follows.

First, the present inventors added a large amount of the compound (A) as an acid generator to a solution of an actinic ray-sensitive or radiation-sensitive resin composition (typically, the composition contains a solvent). ) Was found to have very good solubility. Thereby, the actinic ray-sensitive or radiation-sensitive resin composition according to the present invention has excellent solvent solubility while containing the compound (A) at 5% by mass or more based on the total solid content of the composition. Can be. Further, according to this composition, since a resist film containing an acid generator at a high concentration can be formed, the cross-linking reaction required in the exposed area can be reliably performed, and the developer can be dissolved in the developer between the exposed area and the unexposed area. It is considered that high sensitivity, high resolution, and excellent roughness performance have been achieved by increasing the contrast.
In addition, the present inventors have surprisingly found that the dissolution rate of the unexposed portion with respect to the developer does not decrease so much while the compound (A) is contained in the resist film at a high concentration. This is considered to be because the compound (A) has an alcoholic hydroxyl group which is a hydrophilic group, so that the compound (A) is easily soluble in an alkali developer and also easily soluble in an organic developer. As a result, it is considered that there is little undissolved residue in the developer in the unexposed area, and an excellent pattern shape and excellent scum performance have been achieved.
Furthermore, as described above, the actinic ray-sensitive or radiation-sensitive resin composition according to the present invention is an excellent solvent while containing the compound (A) at 5% by mass or more based on the total solid content of the composition. Since it has solubility, the resist film formed from this composition contains the compound (A) at a high concentration and high uniformity. This point is also considered to contribute greatly to the development of excellent scum performance.

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is typically a negative resist composition. The actinic ray-sensitive or radiation-sensitive resin composition according to the present invention is typically a chemically amplified resist composition.

Hereinafter, each component in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention will be described in detail.

[1] (A) Compound represented by general formula (I) The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is a compound that generates an acid upon irradiation with actinic rays or radiation (photoacid generator). As a compound represented by the following general formula (I) (hereinafter also referred to as “compound (A)”).

R ₁ to R ₁₅ each independently represents a hydrogen atom or a substituent, and at least one of R ₁ to R ₁₅ represents a substituent containing an alcoholic hydroxyl group. Two or more of R ₁ to R ₅ , two or more of R ₆ to R ₁₀ , and two or more of R ₁₁ to R ₁₅ may be bonded to each other to form a ring.
X ⁻ represents an anion selected from the group consisting of a sulfonate anion, a carboxylate anion, a bis (alkylsulfonyl) amide anion, a tris (alkylsulfonyl) methide anion, and a hexafluorophosphate anion.

The alcoholic hydroxyl group in the present invention represents a hydroxyl group bonded to a carbon atom of an alkyl group.

The substituent containing an alcoholic hydroxyl group as at least one of R ₁ to R ₁₅ is typically represented by —W—Y. Y is an alkyl group substituted with a hydroxyl group, and W is a single bond or a divalent linking group.

The alkyl group of Y is methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl, pentyl, neopentyl, hexyl, heptyl, octyl, nonyl, decyl Group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, adamantyl group, norbornyl group, boronyl group Preferred are an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a sec-butyl group, and more preferred are an ethyl group, a propyl group, and an isopropyl group. Y particularly preferably contains a hydroxymethyl group (—CH ₂ OH).

At least one of R ₁ to R ₁₅ is preferably an alkyl group substituted with an alcoholic hydroxyl group. In particular, at least one of R ₁ to R ₁₅ is preferably a hydroxymethyl group (—CH ₂ OH), which can further improve resolution and roughness performance.

The divalent linking group represented by W is not particularly limited, and examples thereof include an alkoxy group, an acyloxy group, a carbamoyloxy group, an alkoxycarbonyloxy group, an aryloxycarbonyloxy group, an acylamino group, an aminocarbonylamino group, Alkoxycarbonylamino group, aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, alkylthio group, arylthio group, sulfamoyl group, alkyl and arylsulfinyl group, alkyl and arylsulfonyl group, acyl group, aryloxy Examples thereof include a divalent group in which an arbitrary hydrogen atom in a monovalent group such as a carbonyl group, an alkoxycarbonyl group, or a carbamoyl group is replaced with a single bond.

W is preferably a single bond, an alkoxy group, an acyloxy group, an acylamino group, an alkyl and arylsulfonylamino group, an alkylthio group, an alkylsulfonyl group, an acyl group, an alkoxycarbonyl group, and any hydrogen atom in the carbamoyl group replaced with a single bond. It is a divalent group, more preferably a divalent group in which any hydrogen atom in a single bond, acyloxy group, alkylsulfonyl group, acyl group or alkoxycarbonyl group is replaced with a single bond.

The substituent containing an alcoholic hydroxyl group may have two or more alcoholic hydroxyl groups. The number of alcoholic hydroxyl groups having a substituent containing an alcoholic hydroxyl group is 1 to 6, preferably 1 to 3, and more preferably 1 or 2.
The number of alcoholic hydroxyl groups possessed by the compound (A) is 1 to 10 in total for all of R ₁ to R ₁₅ , preferably 1 to 6 and more preferably 1 to 3.

When R ₁ to R ₁₅ do not contain an alcoholic hydroxyl group, R ₁ to R ₁₅ are each independently a hydrogen atom or a substituent, and any substituent may be used without any particular limitation. Atoms, alkyl groups (including cycloalkyl groups, bicycloalkyl groups, and tricycloalkyl groups), alkenyl groups (including cycloalkenyl groups and bicycloalkenyl groups), alkynyl groups, aryl groups, and heterocyclic groups (referred to as heterocyclic groups) Cyano group, nitro group, carboxyl group, alkoxy group, aryloxy group, silyloxy group, heterocyclic oxy group, acyloxy group, carbamoyloxy group, alkoxycarbonyloxy group, aryloxycarbonyloxy group, amino group ( Anilino group), ammonio group, acylamino group, aminocal Nylamino group, alkoxycarbonylamino group, aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, mercapto group, alkylthio group, arylthio group, heterocyclic thio group, sulfamoyl group, sulfo group, alkyl group and aryl group Sulfinyl group, alkyl and arylsulfonyl group, acyl group, aryloxycarbonyl group, alkoxycarbonyl group, carbamoyl group, aryl and heterocyclic azo group, imide group, phosphino group, phosphinyl group, phosphinyloxy group, phosphinylamino Groups, phosphono groups, silyl groups, hydrazino groups, ureido groups, boronic acid groups (—B (OH) ₂ ), phosphato groups (—OPO (OH) ₂ ), sulfato groups (—OSO ₃ H), and other known groups Substituent, And the like as.

When R ₁ to R ₁₅ do not contain an alcoholic hydroxyl group, R ₁ to R ₁₅ are preferably a hydrogen atom or a halogen atom, an alkyl group (including a cycloalkyl group, a bicycloalkyl group, or a tricycloalkyl group), an alkenyl group ( Cycloalkenyl group, bicycloalkenyl group), alkynyl group, aryl group, cyano group, carboxyl group, alkoxy group, aryloxy group, acyloxy group, carbamoyloxy group, acylamino group, aminocarbonylamino group, alkoxycarbonylamino group, Aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, alkylthio group, arylthio group, sulfamoyl group, alkyl and arylsulfonyl group, aryloxycarbonyl group, alkoxycal Group, a carbamoyl group, an imido group, a silyl group, a ureido group.

When R ₁ to R ₁₅ do not contain an alcoholic hydroxyl group, R ₁ to R ₁₅ are more preferably a hydrogen atom or a halogen atom, an alkyl group (including a cycloalkyl group, a bicycloalkyl group, and a tricycloalkyl group), a cyano group , Alkoxy group, acyloxy group, acylamino group, aminocarbonylamino group, alkoxycarbonylamino group, alkyl and arylsulfonylamino group, alkylthio group, sulfamoyl group, alkyl and arylsulfonyl group, alkoxycarbonyl group and carbamoyl group.
Further, when R ₁ to R ₁₅ do not contain an alcoholic hydroxyl group, R ₁ to R ₁₅ are particularly preferably a hydrogen atom or an alkyl group (including a cycloalkyl group, a bicycloalkyl group and a tricycloalkyl group), a halogen atom, An alkoxy group;

It is preferable that at least one of R ₂ , R ₄ , R ₇ , R ₉ , R ₁₂ and R ₁₄ is a substituent containing an alcoholic hydroxyl group, whereby the actinic ray-sensitive or radiation-sensitive resin composition Solvent solubility and sensitivity can be further improved. In this case, R ₁ , R ₅ , R ₆ , R ₁₀ , R ₁₁ and R ₁₅ are each independently preferably a hydrogen atom or a substituent other than a substituent containing an alcoholic hydroxyl group, It is more preferable that

As described above, two or more of R ₁ to R ₅ , two or more of R ₆ to R ₁₀ , and two or more of R ₁₁ to R ₁₅ may be bonded to each other to form a ring. Good.
That is, two or more of R ₁ to R ₅ may be bonded to each other to form a ring, or two or more of R ₆ to R ₁₀ may be bonded to each other to form a ring, and R ₁₁ to R 5 Two or more of ₁₅ may be bonded to each other to form a ring. At least one of R ₁ to R ₅ (particularly R ₅ ) and at least one of R ₆ to R ₁₀ (particularly R ₆ ) do not combine to form a ring, and at least one of R ₆ to R ₁₀ does not form a ring. (Particularly R ₁₀ ) and at least one of R ₁₁ to R ₁₅ (particularly R ₁₁ ) do not combine to form a ring, and at least one of R ₁ to R ₅ (particularly R ₁ ) and R _At least one of ₁₁ to R ₁₅ (particularly R ₁₅ ) is not bonded to form a ring.
Examples of the ring include aromatic or non-aromatic hydrocarbon rings or heterocyclic rings, and polycyclic fused rings formed by combining two or more of these, and specific examples include benzene rings and naphthalene rings. , Anthracene ring, phenanthrene ring, fluorene ring, triphenylene ring, naphthacene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, India Lysine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthroline Ring, thianthrene , Chromene ring, xanthene ring, phenoxathiin ring, phenothiazine ring, and, like phenazine ring.

Specific examples of the cation moiety of compound (A) are shown below.

An anion selected from the group consisting of sulfonate anion, carboxylate anion, bis (alkylsulfonyl) amide anion, tris (alkylsulfonyl) methide anion, and hexafluorophosphate anion as X ⁻ is typically non- It is a nucleophilic anion. A non-nucleophilic anion is an anion that has an extremely low ability to cause a nucleophilic reaction, and is an anion that can suppress degradation over time due to an intramolecular nucleophilic reaction.
Examples of the sulfonate anion include an alkyl sulfonate anion, an aryl sulfonate anion, and a camphor sulfonate anion. Examples of the carboxylate anion include an alkylcarboxylate anion, an arylcarboxylate anion, and an aralkylcarboxylate anion.

The alkyl moiety in the alkyl sulfonate anion may be an alkyl group or a cycloalkyl group, preferably an alkyl group having 1 to 30 carbon atoms and a cycloalkyl group having 3 to 30 carbon atoms, such as a methyl group, ethyl Group, propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group Tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, adamantyl group, norbornyl group, boronyl group and the like.
The aryl group in the aryl sulfonate anion is preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a tolyl group, and a naphthyl group.
Examples of the substituent of the alkyl group, cycloalkyl group and aryl group in the alkyl sulfonate anion and aryl sulfonate anion include, for example, a nitro group, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), carboxyl group, Hydroxyl group, amino group, cyano group, alkoxy group (preferably having 1 to 5 carbon atoms), cycloalkyl group (preferably having 3 to 15 carbon atoms), aryl group (preferably having 6 to 14 carbon atoms), alkoxycarbonyl group (preferably May include 2 to 7 carbon atoms, an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 7 carbon atoms), and the like. Regarding the aryl group and ring structure of each group, examples of the substituent further include an alkyl group (preferably having a carbon number of 1 to 15).

Examples of the alkyl moiety in the alkylcarboxylate anion include the same alkyl group and cycloalkyl group as in the alkylsulfonate anion. Examples of the aryl group in the arylcarboxylate anion include the same aryl groups as in the arylsulfonate anion. The aralkyl group in the aralkylcarboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, such as a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and the like.

Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group substituent in the alkylcarboxylate anion, arylcarboxylate anion and aralkylcarboxylate anion include, for example, the same halogen atom, alkyl group as in the arylsulfonate anion, A cycloalkyl group, an alkoxy group, an alkylthio group, etc. can be mentioned. Examples of the sulfonylimide anion include saccharin anion.
The alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methyl anion is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, Examples thereof include an isobutyl group, a sec-butyl group, a pentyl group, and a neopentyl group. Examples of the substituent for these alkyl groups include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, and an alkylthio group.

Anion X in the compound (A) ^- sulfonate anion is preferably an, further preferably an aryl sulfonic acid.
Specific examples of anions include methanesulfonate anion, trifluoromethanesulfonate anion, pentafluoroethanesulfonate anion, heptafluoropropanesulfonate anion, perfluorobutanesulfonate anion, perfluorohexanesulfonate anion, perfluorooctane. Sulfonate anion, pentafluorobenzenesulfonate anion, 3,5-bistrifluoromethylbenzenesulfonate anion, 2,4,6-triisopropylbenzenesulfonate anion, perfluoroethoxyethanesulfonate anion, 2,3,5 Examples include 6-tetrafluoro-4-dodecyloxybenzenesulfonate anion, p-toluenesulfonate anion, 2,4,6-trimethylbenzenesulfonate anion.

Further, the anion X ^- is below preferably an anion with a cyclic organic group, for example, in an embodiment of the present invention, compounds as photoacid generator (A) is exposed to actinic rays or radiation A compound that generates an acid represented by formula (IIIB) or (IVB) is also preferable. Since the compound which generates an acid represented by the following general formula (IIIB) or (IVB) has a cyclic organic group, the resolution and roughness performance can be further improved. Moreover, the improvement effect of PEB temperature dependence can be heightened more according to a synergistic effect with a crosslinking agent (C).

The anion of X ⁻ can be an anion that generates an organic acid represented by the following general formula (IIIB) or (IVB).

In the above general formula,
Xf each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
R ₁ and R ₂ each independently represents a hydrogen atom or an alkyl group.
L each independently represents a divalent linking group.
Cy represents a cyclic organic group.
Rf represents a group containing a fluorine atom.
x represents an integer of 1 to 20.
y represents an integer of 0 to 10.
z represents an integer of 0 to 10.

Xf represents a fluorine atom or an alkyl group substituted with at least one fluorine atom. The alkyl group preferably has 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms. The alkyl group substituted with at least one fluorine atom is preferably a perfluoroalkyl group.

Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms. Xf is more preferably a fluorine atom or CF ₃ . In particular, it is preferable that both Xf are fluorine atoms.

R ₁ and R ₂ are each independently a hydrogen atom or an alkyl group.

The alkyl group as R ₁ and R ₂ may have a substituent, and preferably has 1 to 4 carbon atoms. R ₁ and R ₂ are preferably a hydrogen atom.

L represents a divalent linking group. Examples of the divalent linking group include —COO—, —OCO—, —CONH—, —NHCO—, —CO—, —O—, —S—, —SO—, —SO ₂ —, an alkylene group, and the like. (Preferably having 1 to 6 carbon atoms), a cycloalkylene group (preferably having 3 to 10 carbon atoms), an alkenylene group (preferably having 2 to 6 carbon atoms), or a divalent linking group in which a plurality of these are combined. . Among these, —COO—, —OCO—, —CONH—, —NHCO—, —CO—, —O—, —SO ₂ —, —COO-alkylene group—, —OCO-alkylene group—, —CONH— alkylene group - or -NHCO- alkylene group - are preferred, -COO -, - OCO -, - CONH -, - SO 2 -, - COO- alkylene group - or -OCO- alkylene group - is more preferable.

Cy represents a cyclic organic group. Examples of the cyclic organic group include an alicyclic group, an aryl group, and a heterocyclic group.

The alicyclic group may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include monocyclic cycloalkyl groups such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. Examples of the polycyclic alicyclic group include polycyclic cycloalkyl groups such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. Among these, an alicyclic group having a bulky structure having 7 or more carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, is a PEB (heating after exposure) step. It is preferable from the viewpoint of suppression of in-film diffusibility and improvement of MEEF (Mask Error Enhancement Factor).

The aryl group may be monocyclic or polycyclic. Examples of the aryl group include a phenyl group, a naphthyl group, a phenanthryl group, and an anthryl group. Among these, a naphthyl group having a relatively low light absorbance at 193 nm is preferable.

The heterocyclic group may be monocyclic or polycyclic, but polycyclic can suppress acid diffusion more. Moreover, the heterocyclic group may have aromaticity or may not have aromaticity. Examples of the heterocyclic ring having aromaticity include a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Examples of the heterocyclic ring that does not have aromaticity include a tetrahydropyran ring, a lactone ring, a sultone ring, and a decahydroisoquinoline ring. As the heterocyclic ring in the heterocyclic group, a furan ring, a thiophene ring, a pyridine ring, or a decahydroisoquinoline ring is particularly preferable. Examples of the lactone ring and sultone ring include the lactone structure and sultone structure exemplified in the aforementioned resin (P).

The cyclic organic group may have a substituent. Examples of this substituent include an alkyl group (which may be linear or branched, preferably 1 to 12 carbon atoms), and a cycloalkyl group (monocyclic, polycyclic or spirocyclic). Well, preferably having 3 to 20 carbon atoms), aryl group (preferably having 6 to 14 carbon atoms), hydroxyl group, alkoxy group, ester group, amide group, urethane group, ureido group, thioether group, sulfonamide group, and sulfonic acid An ester group is mentioned. The carbon constituting the cyclic organic group (carbon contributing to ring formation) may be a carbonyl carbon.

X is preferably 1 to 8, more preferably 1 to 4, and particularly preferably 1. y is preferably 0 to 4, more preferably 0. z is preferably 0 to 8, more preferably 0 to 4, and still more preferably 1.

Examples of the group containing a fluorine atom represented by Rf include an alkyl group having at least one fluorine atom, a cycloalkyl group having at least one fluorine atom, and an aryl group having at least one fluorine atom. .

These alkyl group, cycloalkyl group and aryl group may be substituted with a fluorine atom or may be substituted with another substituent containing a fluorine atom. When Rf is a cycloalkyl group having at least one fluorine atom or an aryl group having at least one fluorine atom, other substituents containing a fluorine atom include, for example, alkyl substituted with at least one fluorine atom. Groups.

Further, these alkyl group, cycloalkyl group and aryl group may be further substituted with a substituent which does not contain a fluorine atom. As this substituent, the thing which does not contain a fluorine atom among what was demonstrated about Cy previously can be mentioned, for example.

Examples of the alkyl group having at least one fluorine atom represented by Rf include those described above as an alkyl group substituted with at least one fluorine atom represented by Xf. Examples of the cycloalkyl group having at least one fluorine atom represented by Rf include a perfluorocyclopentyl group and a perfluorocyclohexyl group. Examples of the aryl group having at least one fluorine atom represented by Rf include a perfluorophenyl group.

In the above general formula, a particularly preferred embodiment is an embodiment in which x is 1, 2 and Xf is a fluorine atom, y is 0 to 4, all R ₁ and R ₂ are hydrogen atoms, and z is 1. In such an embodiment, there are few fluorine atoms, it is difficult to be unevenly distributed on the surface when the resist film is formed, and it is easy to disperse uniformly in the resist film.

The compound (A) is an acid having a volume of 130 to ³ or more (more preferably sulfonic acid) from the viewpoint of suppressing the diffusion of the acid generated by exposure to the non-exposed part and improving the resolution and pattern shape. it is preferably a compound that generates, more preferably (more preferably sulfonic acid) acid volume 190 Å ³ or more in size is a compound that generates a volume 270 Å ³ or more the size of the acid (more preferably More preferably, the compound generates a sulfonic acid, and particularly preferably a compound that generates an acid having a volume of 400 ³ or more (more preferably a sulfonic acid). However, from the viewpoint of sensitivity and coating solvent solubility, the volume is preferably 2000 ³ or less, and more preferably 1500 ³ or less. The volume value was determined using “WinMOPAC” manufactured by Fujitsu Limited. That is, first, the chemical structure of the acid according to each example is input, and then the most stable conformation of each acid is determined by molecular force field calculation using the MM3 method with this structure as the initial structure. By performing molecular orbital calculation using the PM3 method for these most stable conformations, the “accessible volume” of each acid can be calculated. Note that “1” is “0.1 nm”.

The content of the compound (A) is 5% by mass or more based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.
The content of the compound (A) is preferably 8% by mass or more, more preferably 12% by mass or more, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition. Thereby, resolution and roughness performance can be further improved.
The content of the compound (A) is preferably 30% by mass or less, and more preferably 25% by mass or less, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

The molecular weight of the compound (A) is preferably 200 to 2000, particularly preferably 400 to 1000.

Compound (A) is synthesized by a method in which a benzene derivative containing a hydroxyl group protected by a protecting group as a substituent and a cyclic sulfoxide compound are condensed to form a sulfonium salt, and the protecting group of the hydroxyl group is deprotected. I can do it.

(In the above formula, W is a divalent linking group, R is an alkylene group, and P is a protecting group.)
Examples of the acid used for the reaction of sulfoniumation include methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, pentanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, p-ethylbenzenesulfonic acid, Nonafluorobutanesulfonic acid and the like can be mentioned, and the conjugate base of the acid used becomes the anion of sulfonium. Examples of the condensing agent used in the sulfoniumation reaction include acid anhydrides, such as trifluoroacetic acid anhydride, polyphosphoric acid, methanesulfonic acid anhydride, trifluoromethanesulfonic acid anhydride, p-toluenesulfonic acid anhydride, nona. Examples include strong acid anhydrides such as fluorobutanesulfonic anhydride, tetrafluorosuccinic anhydride, hexafluoroglutaric anhydride, chlorodifluoroacetic anhydride, pentafluoropropionic anhydride, heptafluorobutanoic anhydride.
Examples of the hydroxyl-protecting group P include ethers and esters, and examples include methyl ether, aryl ether, benzyl ether, acetic acid ester, benzoic acid ester, and carbonic acid ester.
The counter anion X ⁻ can be converted into a desired anion by passing through an ion exchange resin and adding a conjugate acid of the target anion.

Specific examples of the compound (A) are shown below, but are not limited thereto.

[2] (B) Alkali-soluble resin The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains an alkali-soluble resin (hereinafter also referred to as “resin (B)”).
Although resin (B) will not be specifically limited if it is alkali-soluble, It is preferable that it is resin containing a phenolic hydroxyl group.

In the present invention, the phenolic hydroxyl group is a group formed by substituting a hydrogen atom of an aromatic ring group with a hydroxy group. The aromatic ring of the aromatic ring group is a monocyclic or polycyclic aromatic ring, and examples thereof include a benzene ring and a naphthalene ring.

According to the composition of the present invention containing the resin (B), in the exposed portion, the resin (B) containing a phenolic hydroxyl group and a cross-linking agent described later by the action of an acid generated from the compound (A). A crosslinking reaction proceeds with (C), and a negative pattern is formed.

Resin (B) preferably contains a repeating unit having a phenolic hydroxyl group. Although it does not specifically limit as a repeating unit which has a phenolic hydroxyl group, It is preferable that it is a repeating unit represented by the following general formula (II).

Where
R ₂ represents a hydrogen atom, a methyl group which may have a substituent, or a halogen atom (preferably a fluorine atom);
B ′ represents a single bond or a divalent linking group,
Ar ′ represents an aromatic ring group,
m represents an integer of 1 or more.

Examples of the methyl group which may have a substituent for R ₂ include a trifluoromethyl group and a hydroxymethyl group.
R ₂ is preferably a hydrogen atom or a methyl group, and more preferably a hydrogen atom for developability reasons.

Examples of the divalent linking group for B ′ include a carbonyl group, an alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms), a sulfonyl group (—S (═O) ₂ —), —O —, —NH— or a divalent linking group in combination of these is preferred.
B ′ preferably represents a single bond, a carbonyloxy group (—C (═O) —O—) or —C (═O) —NH—, and a single bond or a carbonyloxy group (—C (═O)) —O—) is more preferable, and a single bond is particularly preferable from the viewpoint of improving dry etching resistance.

The aromatic ring group as Ar ′ is a monocyclic or polycyclic aromatic ring group. For example, an aromatic ring group having 6 to 18 carbon atoms such as a benzene ring, naphthalene ring, anthracene ring, fluorene ring, phenanthrene ring or the like Aromatic hydrocarbon ring groups and heterocycles such as thiophene ring, furan ring, pyrrole ring, benzothiophene ring, benzofuran ring, benzopyrrole ring, triazine ring, imidazole ring, benzimidazole ring, triazole ring, thiadiazole ring, thiazole ring An aromatic ring heterocyclic group containing can be mentioned. Among them, Ar ′ is preferably a benzene ring group or a naphthalene ring group from the viewpoint of resolution, and most preferably a benzene ring group from the viewpoint of sensitivity.

M is preferably an integer of 1 to 5, and most preferably 1. When m is 1 and Ar ′ is a benzene ring group, the substitution position of —OH is the para position relative to the bond position with B ′ of the benzene ring (the polymer main chain when B ′ is a single bond). The meta position or the ortho position may be used, but from the viewpoint of crosslinking reactivity, the para position and the meta position are preferable, and the para position is more preferable.

The aromatic ring group as Ar ′ may have a substituent other than the group represented by —OH. Examples of the substituent include an alkyl group, a cycloalkyl group, a halogen atom, a hydroxyl group, and an alkoxy group. Group, carboxyl group, alkoxycarbonyl group, alkylcarbonyl group, alkylcarbonyloxy group, alkylsulfonyloxy group, and arylcarbonyl group.

The repeating unit having a phenolic hydroxyl group is more preferably a repeating unit represented by the following general formula (II ') for reasons of cross-linking reactivity, developability, and dry etching resistance.

In general formula (II ′),
R ₁₂ represents a hydrogen atom or a methyl group.
Ar represents an aromatic ring group.
R ₁₂ represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom for reasons of developability.

Ar in the general formula (II ′) has the same meaning as Ar ′ in the general formula (II), and the preferred range is also the same. The repeating unit represented by the general formula (II ′) is a repeating unit derived from hydroxystyrene (that is, a repeating unit in which R ₁₂ is a hydrogen atom and Ar is a benzene ring group in the general formula (II ′)). It is preferable from the viewpoint of sensitivity.

Resin (B) may be composed only of repeating units having a phenolic hydroxyl group as described above. The resin (B) may have a repeating unit as described later in addition to the repeating unit having a phenolic hydroxyl group as described above. In that case, the content of the repeating unit having a phenolic hydroxyl group is preferably 10 to 98 mol%, more preferably 30 to 97 mol%, based on all repeating units of the resin (B). More preferably, it is 40 to 95 mol%. Thereby, particularly when the resist film is a thin film (for example, when the thickness of the resist film is 10 to 150 nm), the dissolution rate of the exposed portion of the resist film of the present invention in the alkaline developer can be more reliably reduced. (That is, the dissolution rate of the resist film using the resin (B) can be more reliably controlled to be optimal). As a result, the sensitivity can be improved more reliably.

Hereinafter, examples of the repeating unit having a phenolic hydroxyl group will be described, but the present invention is not limited thereto.

The resin (B) has a “structure in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group having a non-acid-decomposable hydrocarbon structure”, and thus a high glass transition temperature (Tg) can be obtained. This is preferable because the etching resistance is improved. Moreover, the improvement effect of PEB temperature dependence can be heightened more according to a synergistic effect with a crosslinking agent (C).

Since the resin (B) has the specific structure described above, the glass transition temperature (Tg) of the resin (B) is increased, and a very hard resist film can be formed. Resistance can be controlled. Therefore, the diffusibility of the acid in the exposed portion of actinic rays or radiation such as an electron beam or extreme ultraviolet rays is greatly suppressed, so that the resolution, pattern shape and roughness performance in a fine pattern are further improved. Further, it is considered that the resin (B) having a non-acid-decomposable hydrocarbon structure contributes to further improvement in dry etching resistance. Furthermore, although the details are unknown, the hydrocarbon structure has a high hydrogen radical donating property, and becomes a hydrogen source during decomposition of the photoacid generator, further improving the decomposition efficiency of the photoacid generator and further increasing the acid generation efficiency. It is estimated that this contributes to better sensitivity.

The specific structure that may be contained in the resin (B) is that the aromatic ring such as a benzene ring and the group having a non-acid-decomposable hydrocarbon structure are oxygen atoms derived from a phenolic hydroxyl group. Are connected through. As described above, the structure not only contributes to high dry etching resistance, but also can increase the glass transition temperature (Tg) of the resin (B), and the combination effect provides high resolution. Presumed.

Non-acid-decomposable means a property that does not cause a decomposition reaction by an acid generated by a photoacid generator.
More specifically, the group having a non-acid-decomposable hydrocarbon structure is preferably a group stable to acids and alkalis. The group stable to acid and alkali means a group that does not exhibit acid decomposability and alkali decomposability. Here, acid decomposability means the property of causing a decomposition reaction by the action of an acid generated by a photoacid generator.

Alkali decomposability means the property of causing a decomposition reaction by the action of an alkali developer, and the group exhibiting alkali decomposability is preferably used in a positive actinic ray-sensitive or radiation-sensitive resin composition. Examples thereof include groups (for example, groups having a lactone structure) that are decomposed by the action of a conventionally known alkali developer contained in the resin and increase the dissolution rate in the alkali developer.
The group having a hydrocarbon structure is not particularly limited as long as it is a monovalent group having a hydrocarbon structure, but the total carbon number is preferably 5 to 40, more preferably 7 to 30. The hydrocarbon structure may have an unsaturated bond in the ring.

The hydrocarbon structure in the group having a hydrocarbon structure is a chain hydrocarbon group, a branched hydrocarbon group, a structure having a monocyclic alicyclic hydrocarbon group, or a polycyclic alicyclic hydrocarbon structure. Meaning, it may be a bridge type. The monocyclic alicyclic hydrocarbon group is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. You may have two or more groups. In the case of having a plurality of monocyclic alicyclic hydrocarbon groups, it is preferable to have 2 to 4 monocyclic alicyclic hydrocarbon groups, and particularly preferable to have two.

Examples of the chain hydrocarbon group and the branched hydrocarbon group include those having 1 to 20 carbon atoms (more preferably 1 to 10 carbon atoms, still more preferably 1 to 7 carbon atoms), a propyl group, Examples include isopropyl group, n-butyl group, s-butyl group, isobutyl group, pentyl group, isopentyl group, neopentyl group, hexyl group, 2-ethylhexyl group, octyl group and the like.

Examples of the polycyclic alicyclic hydrocarbon structure include bicyclo, tricyclo, and tetracyclo structures having 5 or more carbon atoms, and polycyclic cyclostructures having 6 to 30 carbon atoms are preferable. For example, an adamantane structure and a decalin structure A norbornane structure, a norbornene structure, a cedrol structure, an isobornane structure, a bornane structure, a dicyclopentane structure, an α-pinene structure, a tricyclodecane structure, a tetracyclododecane structure, and an androstane structure. A part of carbon atoms in the monocyclic or polycyclic cycloalkyl group may be substituted with a heteroatom such as an oxygen atom.

Preferred examples of the hydrocarbon structure include an adamantane structure, a decalin structure, a norbornane structure, a norbornene structure, a cedrol structure, a structure having a plurality of cyclohexyl groups, a structure having a plurality of cycloheptyl groups, a structure having a plurality of cyclooctyl groups, and cyclodecanyl. Examples include a structure having a plurality of groups, a structure having a plurality of cyclododecanyl groups, and a tricyclodecane structure, and an adamantane structure is most preferable from the viewpoint of dry etching resistance (that is, a group having the above non-acid-decomposable hydrocarbon structure is And most preferably a group having a non-acid-decomposable adamantane structure).

The chemical formulas of these hydrocarbon structures are shown below.

Further, the hydrocarbon structure may have a substituent. Examples of the substituent include an alkyl group (preferably 1 to 6 carbon atoms), a cycloalkyl group (preferably 3 to 10 carbon atoms), an aryl group (preferably Has 6 to 15 carbon atoms, halogen atom, hydroxyl group, alkoxy group (preferably 1 to 6 carbon atoms), carboxyl group, carbonyl group, thiocarbonyl group, alkoxycarbonyl group (preferably 2 to 7 carbon atoms), and these Examples include a group formed by combining groups (preferably having a total carbon number of 1 to 30, more preferably a total carbon number of 1 to 15).

As the hydrocarbon structure, any one hydrogen in the structure represented by any of the above formulas (7), (23), (40), (41) and (51), or the structure of the above formula (48) A structure having two monovalent groups each having an atom as a bond is preferable. The structure represented by any one of the above formulas (23), (40) and (51), and any structure in the structure of the above formula (48) A structure having two monovalent groups each having one hydrogen atom as a bond is more preferable, and a structure represented by the above formula (40) is most preferable.
The group having a hydrocarbon structure is preferably a monovalent group having any one hydrogen atom of the hydrocarbon structure as a bond.

The above-mentioned “structure in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group having a non-acid-decomposable hydrocarbon structure” is the above-mentioned “group having a non-acid-decomposable hydrocarbon structure, It is preferable to contain in the resin (B) as a repeating unit having “a structure in which a hydrogen atom is substituted”. In addition, the number of crosslinking points in the resin (B), such as phenolic hydroxyl groups and phenol ortho carbon, is reduced, and the reaction in the film proceeds excessively with the acid generated when the resist film is left after exposure. From the viewpoint of suppressing this and further improving the stability of PED (Post Exposure Delay), it is more preferable to be contained in the resin (B) as a repeating unit represented by the following general formula (1).

In general formula (1), R represents a hydrogen atom or a methyl group, and X represents a group having a non-acid-decomposable hydrocarbon group. Ar represents an aromatic ring group. L represents a divalent linking group.

R in the general formula (1) represents a hydrogen atom or a methyl group, and a hydrogen atom is particularly preferable.
Specific examples and preferred examples of the aromatic ring group of Ar in the general formula (1) are the same as those given for the aromatic ring group as Ar ′ in the general formula (II).

The aromatic ring group of Ar may have a substituent other than the group represented by —OX, and examples of the substituent include an alkyl group (preferably having 1 to 6 carbon atoms), a cycloalkyl group ( Preferably 3 to 10 carbon atoms, aryl group (preferably 6 to 15 carbon atoms), halogen atom, hydroxyl group, alkoxy group (preferably 1 to 6 carbon atoms), carboxyl group, alkoxycarbonyl group (preferably 2 carbon atoms) To 7), an alkyl group, an alkoxy group and an alkoxycarbonyl group are preferable, and an alkoxy group is more preferable.

X represents a group having a non-acid-decomposable hydrocarbon group, and preferably represents a group having a non-acid-decomposable hydrocarbon structure. Specific examples and preferred ranges of the group having a non-acid-decomposable hydrocarbon structure represented by X are the same as those described above. X is more preferably a group represented by —Y—X ₂ in the general formula (4) described later.

Examples of the divalent linking group for L include a carbonyl group, an alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms), a sulfonyl group (—S (═O) ₂ —), —O—. , —NH— or a divalent linking group in combination of these is preferred.
L preferably represents a single bond, a carbonyloxy group (—C (═O) —O—) or —C (═O) —NH—, and a single bond or a carbonyloxy group (—C (═O) — O-) is more preferable, and a single bond is particularly preferable from the viewpoint of improving dry etching resistance.

In the present invention, the repeating unit represented by the general formula (1) is preferably a repeating unit represented by the following general formula (4).
When the resin (B) having a repeating unit represented by the general formula (4) is used, the Tg of the resin (B) is increased, and a very hard resist film is formed. Therefore, acid diffusibility and dry etching resistance are improved. More reliable control.

In the general formula (4), R ₁₃ represents a hydrogen atom or a methyl group.
Y represents a single bond or a divalent linking group.
X ₂ represents a non-acid-decomposable hydrocarbon group.

Preferred examples of the repeating unit represented by the general formula (4) used in the present invention are described below.
R ₁₃ in the general formula (4) represents a hydrogen atom or a methyl group, and a hydrogen atom is particularly preferable.

In general formula (4), Y is preferably a divalent linking group. Preferred groups as the divalent linking group for Y are a carbonyl group, a thiocarbonyl group, an alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms), a sulfonyl group, —COCH ₂ —, —NH—. Or a divalent linking group (preferably having a total carbon number of 1 to 20, more preferably a total carbon number of 1 to 10), more preferably a carbonyl group, —COCH ₂ —, a sulfonyl group, —CONH— , —CSNH—, more preferably a carbonyl group, —COCH ₂ —, and particularly preferably a carbonyl group.

X ₂ represents a hydrocarbon group and is non-acid-decomposable. The total carbon number of the hydrocarbon group is preferably 5 to 40, and more preferably 7 to 30. The hydrocarbon group may have an unsaturated bond in the ring.
Such a hydrocarbon group is a chain hydrocarbon group, a branched hydrocarbon group, a group having a monocyclic alicyclic hydrocarbon group, or a polycyclic alicyclic hydrocarbon group, It may be a formula. The monocyclic alicyclic hydrocarbon group is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. You may have two or more groups. In the case of having a plurality of monocyclic alicyclic hydrocarbon groups, it is preferable to have 2 to 4 monocyclic alicyclic hydrocarbon groups, and particularly preferable to have two.

The chain hydrocarbon group and the branched hydrocarbon group are preferably those having 1 to 20 carbon atoms, more preferably those having 1 to 10 carbon atoms, and those having 1 to 7 carbon atoms. More preferred examples.
Specific examples of the chain hydrocarbon group and the branched hydrocarbon group include propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, pentyl group, isopentyl group, neopentyl group, A hexyl group, a 2-ethylhexyl group, an octyl group and the like can be mentioned.

Examples of the polycyclic alicyclic hydrocarbon group include groups having a bicyclo, tricyclo or tetracyclo structure having 5 or more carbon atoms, and groups having a polycyclic cyclo structure having 6 to 30 carbon atoms are preferable. And adamantyl group, norbornyl group, norbornenyl group, isobornyl group, camphanyl group, dicyclopentyl group, α-pinel group, tricyclodecanyl group, tetracyclododecyl group, and androstanyl group. A part of carbon atoms in the monocyclic or polycyclic cycloalkyl group may be substituted with a heteroatom such as an oxygen atom.

The polycyclic alicyclic hydrocarbon groups described above X _2, preferably an adamantyl group, a decalin group, a norbornyl group, a norbornenyl group, a cedrol group, a group having a plurality of cyclohexyl groups, having plural groups cycloheptyl group, a cyclooctyl group A group having a plurality, a group having a plurality of cyclodecanyl groups, a group having a plurality of cyclododecanyl groups, and a tricyclodecanyl group, and an adamantyl group is most preferable from the viewpoint of dry etching resistance. As the chemical formula of the hydrocarbon structure in the hydrocarbon group of X ₂ , the same chemical formula as the chemical formula of the hydrocarbon structure in the above-described group having a hydrocarbon structure can be mentioned, and the preferred range is also the same. Examples of the hydrocarbon group for X ₂ include a monovalent group having any one hydrogen atom in the above-described hydrocarbon structure as a bond.

Furthermore, the alicyclic hydrocarbon group may have a substituent, and examples of the substituent include the same as those described above as the substituent that the hydrocarbon structure may have.
The substitution position of —O—Y—X ₂ in the general formula (4) may be a para position, a meta position, or an ortho position with respect to the bonding position of the benzene ring to the polymer main chain, but the para position is preferred.

In the present invention, the repeating unit represented by the general formula (1) is most preferably a repeating unit represented by the following general formula (4 ').

In General Formula (4 ′), R ₁₃ represents a hydrogen atom or a methyl group.
R ₁₃ in the general formula (4 ′) represents a hydrogen atom or a methyl group, and a hydrogen atom is particularly preferable.
The substitution position of the adamantyl ester group in the general formula (4 ′) may be in the para position, the meta position, or the ortho position with respect to the bonding position with the polymer main chain of the benzene ring, but the para position is preferred.

Specific examples of the repeating unit having a structure in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group having a non-acid-decomposable hydrocarbon structure include the following.

Among these, specific examples of the repeating unit represented by the general formula (4) include the following.

When the resin (B) is a resin containing a repeating unit having a structure in which a hydrogen atom of a phenolic hydroxyl group is substituted with the above-described group having a non-acid-decomposable hydrocarbon structure, the content of the repeating unit Is preferably 1 to 40 mol%, more preferably 2 to 30 mol%, based on all repeating units of the resin (B).

The resin (B) may also serve as a crosslinking agent (C) described in detail later (in other words, the resin (B) and the crosslinking agent (C) may be the same component).
That is, the resin (B) may have a crosslinkable group, and in this case, it is preferable to have a repeating unit having a crosslinkable group.

Preferred examples of the repeating unit having a crosslinkable group described above include the following repeating units (Q).

(Repeating unit (Q))
The repeating unit (Q) has a structure containing at least one methylol group which may have a substituent.
Here, the “methylol group” is a group represented by the following general formula (M), and in one embodiment of the present invention, a hydroxymethyl group or an alkoxymethyl group is preferable.

In the formula, R ₂ , R ₃ and Z are as defined in the general formula (Q-1) described later.
* Represents a bond.
R ₂ and R ₃ may combine with each other to form a ring, and in this case, the ring is a single bond or an atom to which a bond represented by * is directly or indirectly bonded. It may be bonded through a linking group to form a further ring.
R ₂ and R ₃ are preferably both hydrogen atoms or alkyl groups.
First, the general formula (Q-1) will be described.

In general formula (Q-1):
R ₁ represents a hydrogen atom, a methyl group, or a halogen atom.
R ₂ and R ₃ represent a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group.
L represents a divalent linking group or a single bond.
Y represents a monovalent substituent excluding a methylol group.
Z represents a hydrogen atom or a substituent.
m represents an integer of 0 to 4.
n represents an integer of 1 to 5.
m + n is 5 or less.
When m is 2 or more, the plurality of Y may be the same as or different from each other.
When n is 2 or more, the plurality of R ₂ , R ₃ and Z may be the same as or different from each other.
Two or more of Y, R ₂ , R ₃ and Z may be bonded to each other to form a ring structure. Here, “two or more of Y, R ₂ , R ₃ and Z are bonded to each other to form a ring structure” is represented by the same symbol when there are a plurality of groups represented by the same symbol. It means that groups may be bonded to each other to form a ring structure, or groups represented by different symbols may be bonded to each other to form a ring.

The methyl group represented by R ₁ may have a substituent, and examples of the substituent include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, hydroxyl group and isopropyl group. Can do. Examples of the methyl group which may have a substituent include a methyl group, a trifluoromethyl group, and a hydroxymethyl group. Examples of the halogen atom for R ₁ include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
R ₁ is preferably a hydrogen atom or a methyl group.

Examples of the alkyl group represented by R ₂ and R ₃ include a linear or branched alkyl group having 1 to 10 carbon atoms, and examples of the cycloalkyl group include cycloalkyl having 3 to 10 carbon atoms. The group can be mentioned. Examples of the aryl group include aryl groups having 6 to 12 carbon atoms. Specific examples include a hydrogen atom, a methyl group, a cyclohexyl group, a t-butyl group, and a phenyl group. The alkyl group and cycloalkyl group here may have a substituent. Examples of the substituent include those described later as the substituent of the monovalent substituent of Y.
R ₂ and R ₃ are preferably both hydrogen atoms or alkyl groups.

Examples of the divalent linking group represented by L include an aromatic ring group, —C (═O) —, —O—C (═O) —, —CH ₂ —O—C (═O) —, thiocarbonyl Group, a linear or branched alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 6), a linear or branched alkenylene group (preferably having 2 to 10 carbon atoms, more preferably 2 carbon atoms). To 6), a cycloalkylene group (preferably having 3 to 10 carbon atoms, more preferably 3 to 6), a sulfonyl group, —O—, —NH—, —S—, a cyclic lactone structure or a divalent combination thereof. Examples thereof include a linking group (preferably having a total carbon number of 1 to 50, more preferably a total carbon number of 1 to 30, and still more preferably a total carbon number of 1 to 20).

Specific examples and preferred examples of the aromatic ring group in L of the general formula (Q-1) are the same as those given for the aromatic ring group as Ar ′ in the general formula (II).
The divalent linking group represented by L may have a substituent, and the substituent is the same as that described later as the substituent of the monovalent substituent represented by Y. Is mentioned.

Examples of the monovalent substituent represented by Y include an alkyl group (which may be linear or branched, preferably 1 to 12 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms), alkynyl. Group (preferably having 2 to 12 carbon atoms), cycloalkyl group (which may be monocyclic or polycyclic, preferably having 3 to 12 carbon atoms), aryl group (preferably having 6 to 18 carbon atoms), hydroxy Groups, alkoxy groups, ester groups, amide groups, urethane groups, ureido groups, thioether groups, sulfonamido groups, halogen atoms, haloalkyl groups and sulfonic acid ester groups. Preferable examples include an alkyl group, a cycloalkyl group, a halogen atom, a haloalkyl group, a hydroxy group, an alkoxy group, an aryloxy group, an ester group, and an aryl group, and more preferable examples include an alkyl group, a halogen atom, and a hydroxy group. Group and alkoxy group.

The monovalent substituent of Y may further have a substituent. Examples of the substituent include a hydroxyl group, a halogen atom (for example, a fluorine atom), an alkyl group, a cycloalkyl group, an alkoxy group, and a carboxyl group. Group, an alkoxycarbonyl group, an aryl group, an alkoxyalkyl group, and a group obtained by combining these, and those having 8 or less carbon atoms are preferable.
When m is 2 or more, a plurality of Y may be bonded to each other through a single bond or a linking group to form a ring structure. Examples of the linking group in this case include an ether bond, a thioether bond, an ester bond, an amide bond, a carbonyl group, and an alkylene group.

The halogen atom include the same ones methyl group represented by R ₁ is exemplified by optionally may substituent has.
Examples of the haloalkyl group include an alkyl group having 1 to 12 carbon atoms and a cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Specific examples include a fluoromethyl group, a trifluoromethyl group, a pentafluoroethyl group, a heptafluoropropyl group, and an undecafluorocyclohexyl group.

Examples of the monovalent substituent represented by Z include an alkyl group (which may be linear or branched, preferably 1 to 12 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms), alkynyl. Group (preferably having 2 to 12 carbon atoms), cycloalkyl group (preferably having 3 to 8 carbon atoms), aryl group (which may be monocyclic or polycyclic, preferably having 6 to 18 carbon atoms), haloalkyl Groups, alkanoyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, alkylsulfonyloxy groups, arylsulfonyloxy groups, alkylsulfonyl groups, arylsulfonyl groups, cyano groups, alkylthio groups, arylthio groups, alkoxyalkyl groups and heterocyclic groups. It is done. Preferable examples include a hydrogen atom, an alkyl group, a cycloalkyl group, an alkanoyl group, an alkenyl group, a haloalkyl group, and an alkoxyalkyl group.

Preferred examples of the haloalkyl group are the same as those described above for Y in the general formula (Q-1).
The alkanoyl group is preferably an alkanoyl group having 2 to 20 carbon atoms. For example, an acetyl group, a propanoyl group, a butanoyl group, a trifluoromethylcarbonyl group, a pentanoyl group, a benzoyl group, a 1-naphthoyl group, a 2-naphthoyl group, 4 -Methylsulfanylbenzoyl group, 4-phenylsulfanylbenzoyl group, 4-dimethylaminobenzoyl group, 4-diethylaminobenzoyl group, 2-chlorobenzoyl group, 2-methylbenzoyl group, 2-methoxybenzoyl group, 2-butoxybenzoyl group, Examples include 3-chlorobenzoyl group, 3-trifluoromethylbenzoyl group, 3-cyanobenzoyl group, 3-nitrobenzoyl group, 4-fluorobenzoyl group, 4-cyanobenzoyl group and 4-methoxybenzoyl group.

As the alkoxycarbonyl group, an alkoxycarbonyl group having 2 to 20 carbon atoms is preferable. For example, a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, a butoxycarbonyl group, a hexyloxycarbonyl group, an octyloxycarbonyl group, a decyloxycarbonyl group , Octadecyloxycarbonyl group and trifluoromethyloxycarbonyl group.

Examples of the aryloxycarbonyl group include aryloxycarbonyl groups having 7 to 30 carbon atoms, such as phenoxycarbonyl group, 1-naphthyloxycarbonyl group, 2-naphthyloxycarbonyl group, 4-methylsulfanylphenyloxycarbonyl group, 4-phenylsulfanylphenyloxycarbonyl group, 4-dimethylaminophenyloxycarbonyl group, 4-diethylaminophenyloxycarbonyl group, 2-chlorophenyloxycarbonyl group, 2-methylphenyloxycarbonyl group, 2-methoxyphenyloxycarbonyl group, 2 -Butoxyphenyloxycarbonyl group, 3-chlorophenyloxycarbonyl group, 3-trifluoromethylphenyloxycarbonyl group, 3-cyanophenyloxycarbonyl group, 3 Nitrophenyl oxycarbonyl group, 4-fluorophenyl oxycarbonyl group, 4-cyanophenyl oxycarbonyl group and a 4-methoxyphenyl oxycarbonyl group.

The alkylsulfonyloxy group is preferably an alkylsulfonyloxy group having 1 to 20 carbon atoms. For example, a methylsulfonyloxy group, an ethylsulfonyloxy group, a propylsulfonyloxy group, an isopropylsulfonyloxy group, a butylsulfonyloxy group, a hexylsulfonyloxy group Group, cyclohexylsulfonyloxy group, octylsulfonyloxy group, 2-ethylhexylsulfonyloxy group, decanoylsulfonyloxy group, dodecanoylsulfonyloxy group, octadecanoylsulfonyloxy group, cyanomethylsulfonyloxy group, methoxymethylsulfonyloxy group, and A perfluoroalkylsulfonyloxy group may be mentioned.

The arylsulfonyloxy group is preferably an arylsulfonyloxy group having 6 to 30 carbon atoms. For example, a phenylsulfonyloxy group, a 1-naphthylsulfonyloxy group, a 2-naphthylsulfonyloxy group, a 2-chlorophenylsulfonyloxy group, 2- Methylphenylsulfonyloxy group, 2-methoxyphenylsulfonyloxy group, 2-butoxyphenylsulfonyloxy group, 3-chlorophenylsulfonyloxy group, 3-trifluoromethylphenylsulfonyloxy group, 3-cyanophenylsulfonyloxy group, 3-nitro Phenylsulfonyloxy group, 4-fluorophenylsulfonyloxy group, 4-cyanophenylsulfonyloxy group, 4-methoxyphenylsulfonyloxy group, 4-methylsulfanylphenylsulfo Aryloxy group, and a 4-phenylsulfanyl-phenyl sulfonyloxy group and a 4-dimethylaminophenyl sulfonyloxy group.

As the alkylsulfonyl group, an alkylsulfonyl group having 1 to 20 carbon atoms is preferable. For example, a methylsulfonyl group, an ethylsulfonyl group, a propylsulfonyl group, an isopropylsulfonyl group, a butylsulfonyl group, a hexylsulfonyl group, a cyclohexylsulfonyl group, an octylsulfonyl group. Group, 2-ethylhexylsulfonyl group, decanoylsulfonyl group, dodecanoylsulfonyl group, octadecanoylsulfonyl group, cyanomethylsulfonyl group, methoxymethylsulfonyl group and perfluoroalkylsulfonyl group.

The arylsulfonyl group is preferably an arylsulfonyl group having 6 to 30 carbon atoms, such as a phenylsulfonyl group, a 1-naphthylsulfonyl group, a 2-naphthylsulfonyl group, a 2-chlorophenylsulfonyl group, a 2-methylphenylsulfonyl group, 2 -Methoxyphenylsulfonyl group, 2-butoxyphenylsulfonyl group, 3-chlorophenylsulfonyl group, 3-trifluoromethylphenylsulfonyl group, 3-cyanophenylsulfonyl group, 3-nitrophenylsulfonyl group, 4-fluorophenylsulfonyl group, 4 -Cyanophenylsulfonyl group, 4-methoxyphenylsulfonyl group, 4-methylsulfanylphenylsulfonyl group, 4-phenylsulfanylphenylsulfonyl group and 4-dimethylaminophenylsulfonyl group It is below.

Examples of the alkylthio group include alkylthio groups having 1 to 30 carbon atoms, such as methylthio group, ethylthio group, propylthio group, n-butylthio group, trifluoromethylthio group, hexylthio group, t-butylthio group, 2-ethylhexylthio group. Group, cyclohexylthio group, decylthio group and dodecylthio group.
Examples of the arylthio group include arylthio groups having 6 to 30 carbon atoms, such as a phenylthio group, a 1-naphthylthio group, a 2-naphthylthio group, a tolylthio group, a methoxyphenylthio group, a naphthylthio group, a chlorophenylthio group, and trifluoromethyl. A phenylthio group, a cyanophenylthio group, and a nitrophenylthio group are mentioned.

The heterocyclic group is preferably an aromatic or aliphatic heterocyclic group containing a nitrogen atom, an oxygen atom, a sulfur atom, or a phosphorus atom. Examples of the heterocyclic group include a thienyl group, a benzo [b] thienyl group, a naphtho [2,3-b] thienyl group, a thiantenyl group, a furyl group, a pyranyl group, an isobenzofuranyl group, a chromenyl group, and a xanthenyl group. Phenoxathiinyl group, 2H-pyrrolyl group, pyrrolyl group, imidazolyl group, pyrazolyl group, pyridyl group, pyrazinyl group, pyrimidinyl group, pyridazinyl group, indolizinyl group, isoindolyl group, 3H-indolyl group, indolyl group, 1H-indazolyl Group, purinyl group, 4H-quinolidinyl group, isoquinolyl group, quinolyl group, phthalazinyl group, naphthyridinyl group, quinoxanilyl group, quinazolinyl group, cinnolinyl group, pteridinyl group, 4aH-carbazolyl group, carbazolyl group, β-carbolynyl group, phenanthridinyl group Le group, Cridinyl, perimidinyl, phenanthrolinyl, phenazinyl, phenalsadinyl, isothiazolyl, phenothiazinyl, isoxazolyl, furazanyl, phenoxazinyl, isochromanyl, chromanyl, pyrrolidinyl, pyrrolinyl, imidazolidinyl, imidazolidinyl Group, pyrazolidinyl group, pyrazolinyl group, piperidyl group, piperazinyl group, indolinyl group, isoindolinyl group, quinuclidinyl group, tetrahydropyrimidinyl group, tetrahydro-2-pyrimidinyl group, triazinyl group, morpholinyl group and thioxanthryl group.

N is preferably an integer of 1 to 4, more preferably an integer of 2 to 4, and particularly preferably 2 or 3. m is preferably 0 or 1.

The repeating unit (Q) represented by the general formula (Q-1) is preferably a repeating unit represented by the following general formula (2) or (3).

In general formulas (2) and (3),
R ₁ , R ₂ , R ₃ , Y, Z, m and n are as defined in the general formula (Q-1).
Ar represents an aromatic ring group.
W ₁ and W ₂ represent a divalent linking group or a single bond.

Specific examples of R ₁ , R ₂ , R ₃ , Y, Z, m and n are the same as those described in the general formula (Q-1), and the preferred ranges are also the same.
Specific examples of the aromatic ring group represented by Ar include those similar to the specific examples in the case where L in the general formula (Q-1) is an aromatic ring, and the preferred range is also the same.

Examples of the divalent linking group represented by W ₁ and W ₂ include a monocyclic or polycyclic aromatic hydrocarbon ring which may have a substituent having 6 to 18 carbon atoms, —C (═O) — , —O—C (═O) —, —CH ₂ —O—C (═O) —, a thiocarbonyl group, a linear or branched alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1). To 6), a linear or branched alkenylene group (preferably having 2 to 10 carbon atoms, more preferably 2 to 6), a cycloalkylene group (preferably having 3 to 10 carbon atoms, more preferably 5 to 10 carbon atoms), Examples thereof include a sulfonyl group, —O—, —NH—, —S—, a cyclic lactone structure, or a divalent linking group obtained by combining these.

The repeating unit (Q) represented by the general formula (Q-1) is more preferably represented by the following general formula (2 ′) or (3 ′).

R ₁ , Y, Z, m and n in the general formulas (2 ′) and (3 ′) have the same meanings as the groups in the general formula (Q-1), and specific examples and preferred ranges are also the same. . Ar in the general formula (2 ′) has the same meaning as Ar in the general formula (2), and the preferred range is also the same.
In the general formula (3 ′), W ₃ is a divalent linking group. Examples of the divalent linking group represented by W ₃ include a monocyclic or polycyclic aromatic hydrocarbon ring, —C (═O) —, linear, which may have a substituent having 6 to 18 carbon atoms. Or branched alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms), cycloalkylene group (preferably having 3 to 10 carbon atoms, more preferably 5 to 10 carbon atoms), -O-, cyclic lactone Examples thereof include a structure or a divalent linking group obtained by combining these.

In the general formula (2 ′), f is an integer of 0 to 6. An integer of 0 to 3 is preferable, and an integer of 1 to 3 is more preferable.
In the general formulas (2 ′) and (3 ′), g is 0 or 1.

The general formula (2 ′) is particularly preferably represented by any one of the following general formulas (1-a) to (1-c). The repeating unit (Q) is particularly preferably a repeating unit represented by any one of the following general formulas (1-a) to (1-c) or a repeating unit represented by the above general formula (3 ′). .

R ₁ , Y and Z in the general formulas (1-a) to (1-c) have the same meanings as the groups in the general formula (Q-1), and specific examples and preferred ranges thereof are also the same.
In the general formulas (1-b) to (1-c),
Y ″ represents a hydrogen atom or a monovalent substituent. Examples of the monovalent substituent include the same monovalent substituents as those described above for Y. However, Y ″ represents methylol. It may be a group.
R ₄ represents a hydrogen atom or a monovalent substituent. Specific examples of the monovalent substituent include the same as those in the case where Z in the general formula (Q-1) is a monovalent substituent.
f represents an integer of 1 to 6. A preferred range is as described in the general formula (2 ′).
m is 0 or 1, and n represents an integer of 1 to 3.

In the above general formulas (1-b) and (1-c), R ₄ is a hydrogen atom, an alkyl group (which may be linear or branched and preferably has 1 to 12 carbon atoms), an alkenyl group ( 2 to 12 carbon atoms are preferred), an alkynyl group (preferably 2 to 12 carbon atoms), a cycloalkyl group (preferably 3 to 8 carbon atoms), an aryl group (monocyclic or polycyclic may be used) And a haloalkyl group, an alkanoyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an alkylsulfonyloxy group, an arylsulfonyloxy group, an alkylsulfonyl group, an arylsulfonyl group, a cyano group, an alkylthio group, an arylthio group, and A heterocyclic group is mentioned. Preferable examples include a hydrogen atom, an alkyl group, a cycloalkyl group, and an alkanoyl group.

Specific examples of the haloalkyl group, alkanoyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylsulfonyloxy group, arylsulfonyloxy group, alkylsulfonyl group, arylsulfonyl group, cyano group, alkylthio group, arylthio group and heterocyclic group are as follows: It is the same as Y of the said General formula (1), and its preferable range is also the same.

The content of the repeating unit (Q) is preferably 5 to 50 mol% with respect to all repeating units contained in the resin (B) from the viewpoint of crosslinking efficiency and developability, and is preferably 10 to 40 mol%. More preferably.
Specific examples of the repeating unit (Q) include the following structures.

Preferred examples of the repeating unit having a crosslinkable group include a repeating unit represented by the following general formula (1-1) or (1-2).

In the above formulas (1-1) and (1-2), A represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R ¹ represents a hydrogen atom or a linear, branched or cyclic monovalent hydrocarbon group having 1 to 6 carbon atoms. L represents a single bond or a divalent linking group. Ar represents a divalent aromatic ring group. Y represents a single bond or a divalent linking group.

A is preferably a hydrogen atom or a methyl group.

The divalent linking group represented by L may have a substituent, and specific examples of the divalent linking group represented by L and the substituent that the divalent linking group may have are described above. It is the same as that for L in the general formula (Q-1).

L is preferably a single bond.

Specific examples and preferred examples of the aromatic ring represented by Ar are the same as the specific examples and preferred examples when L in the general formula (Q-1) is an aromatic ring.

Examples of the divalent linking group represented by Y include a monocyclic or polycyclic aromatic ring having 6 to 18 carbon atoms, —C (═O) —, —O—C (═O) —, —CH ₂ —. O—C (═O) —, a thiocarbonyl group, a linear or branched alkylene group (preferably having a carbon number of 1 to 10, more preferably 1 to 6), a linear or branched alkenylene group (preferably 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms), a cycloalkylene group (preferably 3 to 10 carbon atoms, more preferably 3 to 6 carbon atoms), a sulfonyl group, —O—, —NH—, —S—, Examples thereof include a cyclic lactone structure or a divalent linking group combining these (preferably having a total carbon number of 1 to 50, more preferably a total carbon number of 1 to 30, and even more preferably a total carbon number of 1 to 20).

Y is preferably an ethylene group or a methylenecarbonyl group.

In the above formulas (1-1) and (1-2), R ₁ represents a hydrogen atom or a linear, branched or cyclic monovalent hydrocarbon group having 1 to 6 carbon atoms. Specific examples of the linear, branched or cyclic monovalent hydrocarbon group having 1 to 6 carbon atoms include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, and structural isomers thereof. And an alkyl group such as a cyclopentyl group and a cyclohexyl group are preferable, and a methyl group is particularly preferable. If the number of carbon atoms exceeds 6, the ability to form a crosslink may be lowered.

Preferred specific examples of the repeating unit represented by the general formulas (1-1) and (1-2) include the following, but are not limited thereto.

(In the formula, A is the same as defined above.)

The resin (B) may or may not have the above repeating unit, but when it is included, the content of the repeating unit is generally 1 to 30 with respect to all the repeating units in the resin (B). The mol%, preferably 1 to 20 mol%, more preferably 2 to 15 mol%.

Resin (B) is a structural site that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain (hereinafter referred to as “acid generating structure” from the viewpoint of improving at least one of resolution, roughness characteristics, and EL (exposure latitude). It is also preferable to include a repeating unit (A1) having (a) ".

The resin (B) may have a repeating unit represented by the following general formula (5) as a repeating unit (A1) having a structural site that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain. preferable.

R ⁴¹ represents a hydrogen atom or a methyl group. L ⁴¹ represents a single bond or a divalent linking group. L ⁴² represents a divalent linking group. S represents a structural site that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain.

R ⁴¹ is a hydrogen atom or a methyl group as described above, and more preferably a hydrogen atom.

Examples of the divalent linking group of L ⁴¹ and L ⁴² include an alkylene group, a cycloalkylene group, an arylene group, —O—, —SO ₂ —, —CO—, —N (R) —, —S—, -CS- and combinations of two or more thereof are mentioned, and those having a total carbon number of 20 or less are preferred. Here, R represents an aryl group, an alkyl group, or cycloalkyl.

The divalent linking group of L ⁴² is preferably an arylene group, an arylene group having 6 to 18 carbon atoms (more preferably 6 to 10 carbon atoms) such as a phenylene group, a tolylene group or a naphthylene group, or, for example, Preferred examples include divalent aromatic ring groups containing heterocycles such as thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, and thiazole.

The alkylene group of L ⁴¹ and L ⁴² is preferably an alkylene group having 1 to 12 carbon atoms such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, an octylene group, and a dodecanylene group.

Preferred examples of the cycloalkylene group represented by L ⁴¹ and L ⁴² include those having 5 to 8 carbon atoms such as a cyclopentylene group and a cyclohexylene group.

The arylene group of L ⁴¹ and L ⁴² preferably includes those having 6 to 14 carbon atoms such as a phenylene group and a naphthylene group.

These alkylene groups, cycloalkylene groups and arylene groups may further have a substituent. Examples of the substituent include alkyl groups, cycloalkyl groups, aryl groups, amino groups, amide groups, ureido groups, urethane groups, hydroxy groups, carboxy groups, halogen atoms, alkoxy groups, thioether groups, acyl groups, and acyloxy groups. , Alkoxycarbonyl group, cyano group and nitro group.

The acid generating structure (a) preferably has a sulfonium salt structure or an iodonium salt structure (more preferably a sulfonium salt structure), and an ionic structure site containing a sulfonium salt or an iodonium salt (more preferably an ion containing a sulfonium salt). Is more preferred. More specifically, a group represented by the following general formula (PZI) or (PZII) is preferable as the acid generating structure (a).

In the general formula (PZI),
R ₂₀₁ to R ₂₀₃ each independently represents an organic group.

The organic group as R ₂₀₁ to R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.

Two of R ₂₀₁ to R ₂₀₃ may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. Examples of the group formed by combining two _{members out} of R ₂₀₁ to R ₂₀₃ include an alkylene group (eg, butylene group, pentylene group). Use of a ring structure in which two of R ₂₀₁ to R ₂₀₃ are combined to form a ring structure is preferable because it can be expected to suppress the exposure machine from being contaminated with decomposition products during exposure.

Z ⁻ represents an acid anion generated by decomposition upon irradiation with actinic rays or radiation, and is preferably a non-nucleophilic anion. Examples of the non-nucleophilic anion include a sulfonate anion, a carboxylate anion, a sulfonylimide anion, a bis (alkylsulfonyl) imide anion, and a tris (alkylsulfonyl) methyl anion.

A non-nucleophilic anion is an anion having a remarkably low ability to cause a nucleophilic reaction, and an anion capable of suppressing degradation with time due to an intramolecular nucleophilic reaction. Thereby, the temporal stability of the resin is improved, and the temporal stability of the composition is also improved.

_Examples of the organic group represented by R ₂₀₁ to R ₂₀₃ include an aryl group, an alkyl group, a cycloalkyl group, a cycloalkenyl group, and an indolyl group. Here, in the cycloalkyl group and the cycloalkenyl group, at least one of the carbon atoms forming the ring may be a carbonyl carbon.

Of R ₂₀₁ to R ₂₀₃ , at least one is preferably an aryl group, more preferably all three are aryl groups.

The aryl group in R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is preferably a phenyl group or a naphthyl group, more preferably a phenyl group.

The alkyl group, cycloalkyl group, and cycloalkenyl group in R ₂₀₁ , R _202, and R ₂₀₃ are preferably a linear or branched alkyl group having 1 to 10 carbon atoms (eg, a methyl group, an ethyl group, a propyl group). Butyl group, pentyl group), cycloalkyl group having 3 to 10 carbon atoms (for example, cyclopentyl group, cyclohexyl group, norbornyl group), cycloalkenyl group having 3 to 10 carbon atoms (for example, pentadienyl group, cyclohexenyl group) Can be mentioned.

These aryl groups, alkyl groups, cycloalkyl groups, cycloalkenyl groups, indolyl groups and the like as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ may further have a substituent. Examples of the substituent include nitro groups, halogen atoms such as fluorine atoms (preferably fluorine atoms), carboxyl groups, hydroxyl groups, amino groups, cyano groups, alkyl groups (preferably having 1 to 15 carbon atoms), alkoxy groups (preferably 1 to 15 carbon atoms), a cycloalkyl group (preferably 3 to 15 carbon atoms), an aryl group (preferably 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably 2 to 7 carbon atoms), an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 7 carbon atoms), an arylthio group (preferably 6 to 14 carbon atoms), a hydroxyalkyl group (preferably 1 to 15 carbon atoms), an alkylcarbonyl group ( Preferably 2-15 carbon atoms), a cycloalkylcarbonyl group (preferably 4-15 carbon atoms), an arylcarbonyl group (preferably Or a cycloalkenyloxy group (preferably 3 to 15 carbon atoms), a cycloalkenylalkyl group (preferably 4 to 20 carbon atoms) and the like, but are not limited thereto. .

In the cycloalkyl group and the cycloalkenyl group as the substituent that each group of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ may have, at least one of the carbon atoms forming the ring may be a carbonyl carbon.

The substituents that each group of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ may have may further have a substituent. Examples of such further substituents include R ₂₀₁ , R _{202 and the like.} And the same examples as the above-mentioned examples of the substituent that each group of R ₂₀₃ may have, an alkyl group and a cycloalkyl group are preferable.

Preferred structures when at least one of R ₂₀₁ to R ₂₀₃ is not an aryl group include Paragraphs 0046 and 0047 of JP-A-2004-233661, Paragraphs 0040 to 0046 of JP-A-2003-35948, US Patent Application Compounds exemplified as formulas (I-1) to (I-70) in published US 2003/0224288, and formulas (IA-1) to (IA-) in published US patent application 2003/0077540. 54), and cation structures such as compounds exemplified as formulas (IB-1) to (IB-24).

In the general formula (PZII), R ₂₀₄ and R ₂₀₅ each independently represents an aryl group, an alkyl group, or a cycloalkyl group. These aryl group, alkyl group and cycloalkyl group are the same as the aryl group described as the aryl group, alkyl group and cycloalkyl group of R ₂₀₁ to R ₂₀₃ in the aforementioned compound (PZI).

The aryl group of R ₂₀₄ and R ₂₀₅ may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (a group formed by losing one hydrogen atom from furan). Groups), thiophene residues (groups formed by the loss of one hydrogen atom from thiophene), indole residues (groups formed by the loss of one hydrogen atom from indole), benzofuran residues ( A group formed by losing one hydrogen atom from benzofuran), a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), and the like.

The aryl group, alkyl group, and cycloalkyl group of R ₂₀₄ and R ₂₀₅ may have a substituent. Examples of this substituent include those that the aryl group, alkyl group, and cycloalkyl group of R ₂₀₁ to R ₂₀₃ in the aforementioned compound (PZI) may have.

Z ⁻ represents an acid anion generated by decomposition upon irradiation with actinic rays or radiation, and is preferably a non-nucleophilic anion, and examples thereof include the same as Z ⁻ in the general formula (PZI).

Preferable specific examples of the acid generating structure (a) include specific examples described in paragraphs [0145] to [0148] of JP2013-80002A.

The acid generating structure (a) is more preferably a group represented by the following general formula (6).

In the formula, L ⁶¹ represents a divalent linking group, and Ar ⁶¹ represents an arylene group. R ₂₀₁ , R ₂₀₂ and R ₂₀₃ have the same meanings as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ in the general formula (PZI), respectively.

Examples of the divalent linking group for L ⁶¹ include an alkylene group, a cycloalkylene group, —O—, —SO ₂ —, —CO—, —N (R) —, —S—, —CS—, and these Combinations are listed. Here, R represents an aryl group, an alkyl group, or cycloalkyl. The total number of carbon atoms of the divalent linking group of L ⁶¹ is preferably 1 to 15, and more preferably 1 to 10.

The alkylene group for L ⁶¹ is preferably an alkylene group having 1 to 12 carbon atoms such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, an octylene group, and a dodecanylene group.

Preferred examples of the cycloalkylene group represented by L ⁶¹ include those having 5 to 8 carbon atoms such as a cyclopentylene group and a cyclohexylene group.

Preferred groups for L ⁶¹ are carbonyl group, methylene group, ^* —CO— (CH ₂ ) _N —O—, ^* —CO— (CH ₂ ) _N —O—CO—, ^* — (CH ₂ ) _N —COO. —, ^* — (CH ₂ ) _N —CONR—, or ^* —CO— (CH ₂ ) _N —NR—, particularly preferably a carbonyl group, ^* —CH ₂ —COO—, ^* —CO—CH ₂ —O—, ^* —CO—CH ₂ —O—CO—, ^* —CH ₂ —CONR—, or ^* —CO—CH ₂ —NR—. Here, N represents an integer of 1 to 10. N is preferably an integer of 1 to 6, more preferably an integer of 1 to 3, and most preferably 1. In addition, ^* represents a linking site on the main chain side, that is, a linking site with an O atom in the formula.

Ar ⁶¹ represents an arylene group and may have a substituent. Ar ⁶¹ may have an alkyl group (preferably having 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms), an alkoxy group (preferably having 1 to 8 carbon atoms, more preferably carbon atoms). And a halogen atom (preferably a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, more preferably a fluorine atom). The aromatic ring of Ar ⁶¹ may be an aromatic hydrocarbon ring (for example, benzene ring or naphthalene ring) or an aromatic heterocyclic ring (for example, quinoline ring), and preferably has 6 to 18 carbon atoms. More preferably, it has 6 to 12 carbon atoms.

Ar ⁶¹ is preferably unsubstituted or an arylene group substituted with an alkyl group or a fluorine atom, and more preferably a phenylene group or a naphthylene group.

Specific examples and preferred examples of R _{201, R 202} and _{R 203} are the same as those described for _{R 201, R 202} and _{R 203} in formula (PZI).

A method for synthesizing the monomer corresponding to the repeating unit (A1) having a structural site that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain is not particularly limited. For example, in the case of an onium structure, the above repeating unit is used. And a method of synthesizing by exchanging an acid anion having a polymerizable unsaturated bond and a known onium salt halide.

More specifically, a metal ion salt (for example, sodium ion, potassium ion, etc.) or an ammonium salt (ammonium, triethylammonium salt, etc.) of an acid having a polymerizable unsaturated bond corresponding to the above repeating unit, and a halogen ion ( An onium salt having a chloride ion, a bromide ion, an iodide ion, etc.) is stirred in the presence of water or methanol to carry out an anion exchange reaction, such as dichloromethane, chloroform, ethyl acetate, methyl isobutyl ketone, tetrahydroxyfuran, etc. By performing liquid separation and washing operation with an organic solvent and water, a monomer corresponding to the target repeating unit represented by the general formula (5) can be synthesized.

After anion exchange reaction by stirring in the presence of an organic solvent that can be separated from water, such as dichloromethane, chloroform, ethyl acetate, methyl isobutyl ketone, and tetrahydroxyfuran, and water separation, washing with water It can also be synthesized by operating.

The repeating unit (A1) having a structural moiety that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain also introduces an acid anion moiety into the side chain by a polymer reaction and introduces an onium salt by salt exchange Can also be synthesized.

Specific examples of the repeating unit (A1) having a structural moiety that decomposes upon irradiation with actinic rays or radiation to generate an acid in the side chain are described in paragraphs [0168] to [0210] of JP2013-80002A. Specific examples described in the above can be given.

The content of the repeating unit (A1) having a structural site capable of decomposing upon irradiation with actinic rays or radiation in the resin (B) to generate an acid in the side chain is from 1 to The range is preferably 40 mol%, more preferably 2 to 30 mol%, particularly preferably 4 to 25 mol%.

The resin (B) used in the present invention preferably further has the following repeating units (hereinafter, also referred to as “other repeating units”) as repeating units other than the above repeating units.
Examples of polymerizable monomers for forming these other repeating units include styrene, alkyl-substituted styrene, alkoxy-substituted styrene, halogen-substituted styrene, O-alkylated styrene, O-acylated styrene, hydrogenated hydroxystyrene, and anhydrous maleic acid. Acid, acrylic acid derivative (acrylic acid, acrylic ester, etc.), methacrylic acid derivative (methacrylic acid, methacrylic ester, etc.), N-substituted maleimide, acrylonitrile, methacrylonitrile, vinyl naphthalene, vinyl anthracene, substituted Inden etc. which may be sufficient can be mentioned.

The resin (B) may or may not have these other repeating units, but when it is included, the content of these other repeating units in the resin (B) is the total number of repeating units constituting the resin (B). It is generally 1 to 30 mol%, preferably 1 to 20 mol%, more preferably 2 to 10 mol%, based on the unit.

Resin (B) can be synthesized by a known radical polymerization method, anion polymerization method, or living radical polymerization method (such as an iniferter method). For example, in the anionic polymerization method, a polymer can be obtained by dissolving a vinyl monomer in a suitable organic solvent and reacting under a cooling condition with a metal compound (such as butyl lithium) as an initiator.

Examples of the resin (B) include polyphenol compounds produced by condensation reaction of aromatic ketones or aromatic aldehydes and compounds containing 1 to 3 phenolic hydroxyl groups (for example, JP-A-2008-145539), calixarene derivatives (For example, Japanese Patent Application Laid-Open No. 2004-18421), a Noria derivative (for example, Japanese Patent Application Laid-Open No. 2009-222920), and a polyphenol derivative (for example, Japanese Patent Application Laid-Open No. 2008-94782) can be applied, and they may be synthesized by modification with a polymer reaction.

The resin (B) is preferably synthesized by modifying a polymer synthesized by a radical polymerization method or an anionic polymerization method by a polymer reaction.
The weight average molecular weight of the resin (B) is preferably 1000 to 200000, more preferably 2000 to 50000, and still more preferably 2000 to 15000.

The dispersity (molecular weight distribution) (Mw / Mn) of the resin (B) is preferably 2.0 or less, preferably 1.0 to 1.80 from the viewpoint of improving sensitivity and resolution, 0.0 to 1.60 is more preferable, and 1.0 to 1.20 is most preferable. Use of living polymerization such as living anionic polymerization is preferable because the degree of dispersion (molecular weight distribution) of the resulting polymer compound becomes uniform.
In the present specification, the weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (Mw / Mn) of the resin (B) and the hydrophobic resin (E) described later are measured by GPC (solvent: Tetrahydrofuran, column: TSK gel Multipore HXL-M manufactured by Tosoh Corporation, column temperature: 40 ° C., flow rate: 1.0 mL / min, detector: RI).
The content of the resin (B) in the composition of the present invention is preferably 30 to 99% by mass, more preferably 40 to 97% by mass, and still more preferably 50 to 95% by mass with respect to the total solid content of the composition. Particularly preferably, it is used at 50 to 80% by mass.

Specific examples of the resin (B) are shown below, but the present invention is not limited thereto.

[3] (C) Crosslinking agent The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a crosslinking agent (hereinafter also referred to as “crosslinking agent (C)”).
The crosslinking agent (C) is typically a compound having an acid crosslinking group. It is more preferable that the compound contains two or more hydroxymethyl groups or alkoxymethyl groups in the molecule. The crosslinking agent (C) is also preferably a compound containing two or more hydroxymethyl groups and alkoxymethyl groups in the molecule. Further, from the viewpoint of improving the roughness performance, the crosslinking agent (C) preferably contains a methylol group.
The crosslinking agent (C) may be in the form of a low molecular compound or may be incorporated in a part of the polymer. Further, the form of the low molecular compound and the form incorporated in a part of the polymer may be used in combination.
When the crosslinking agent (C) is in the form of a low molecular compound, the molecular weight is preferably 3000 or less, more preferably 2000 or less, and even more preferably 1000 or less.
When the crosslinking agent (C) is in a form incorporated in a part of the polymer, it may be incorporated in a part of the resin (B) as described above, or incorporated in a resin different from the resin (B). It may be.

Preferred examples of the crosslinking agent (C) include hydroxymethylated or alkoxymethylated phenol compounds, alkoxymethylated melamine compounds, alkoxymethyl glycoluril compounds, and alkoxymethylated urea compounds. Particularly preferred crosslinking agents (C) include phenol derivatives and alkoxymethyl glycols having 3 to 5 benzene rings in the molecule, and further having two or more hydroxymethyl groups or alkoxymethyl groups, and a molecular weight of 1200 or less. Examples include uril derivatives.
As the alkoxymethyl group, a methoxymethyl group and an ethoxymethyl group are preferable.

Among the examples of the crosslinking agent (C), a phenol derivative having a hydroxymethyl group can be obtained by reacting a corresponding phenol compound having no hydroxymethyl group with formaldehyde under a base catalyst. A phenol derivative having an alkoxymethyl group can be obtained by reacting a corresponding phenol derivative having a hydroxymethyl group with an alcohol in the presence of an acid catalyst.

Examples of another preferred crosslinking agent (C) include N-hydroxymethyl groups or N-alkoxymethyl groups such as alkoxymethylated melamine compounds, alkoxymethylglycoluril compounds, and alkoxymethylated urea compounds. The compound which has can be mentioned.

Examples of such compounds include hexamethoxymethyl melamine, hexaethoxymethyl melamine, tetramethoxymethyl glycoluril, 1,3-bismethoxymethyl-4,5-bismethoxyethylene urea, bismethoxymethyl urea, and the like. 133, 216A, West German Patent 3,634,671, 3,711,264, EP 0,212,482A.
Of the specific examples of the crosslinking agent (C), those particularly preferred are listed below.

In the formula, L ₁ to L ₈ each independently represents a hydrogen atom, a hydroxymethyl group, a methoxymethyl group, an ethoxymethyl group, or an alkyl group having 1 to 6 carbon atoms.

Further, preferred examples of the crosslinking agent (C) include compounds represented by the following general formula (I).

In general formula (I),
R ₁ and R ₆ each independently represents a hydrogen atom or a hydrocarbon group having 5 or less carbon atoms.
R ₂ and R ₅ each independently represents an alkyl group, a cycloalkyl group, an aryl group, or an acyl group.
R ₃ and R ₄ each independently represent a hydrogen atom or an organic group having 2 or more carbon atoms. R ₃ and R ₄ may combine with each other to form a ring.

In one embodiment of the present invention, R ₁ and R ₆ are preferably a hydrocarbon group having 5 or less carbon atoms, more preferably a hydrocarbon group having 4 or less carbon atoms, and particularly preferably a methyl group, an ethyl group, Examples include a propyl group and an isopropyl group.

As the alkyl group represented by R ₂ and R ₅ , for example, an alkyl group having 1 to 6 carbon atoms is preferable, and as a cycloalkyl group, for example, a cycloalkyl group having 3 to 12 carbon atoms is preferable, and as an aryl group, For example, an aryl group having 6 to 12 carbon atoms is preferred, and an acyl group having, for example, an alkyl moiety having 1 to 6 carbon atoms is preferred.
In one embodiment of the present invention, R ₂ and R ₅ are preferably alkyl groups, more preferably alkyl groups having 1 to 6 carbon atoms, and particularly preferably methyl groups.

Examples of the organic group having 2 or more carbon atoms represented by R ₃ and R ₄ include an alkyl group having 2 or more carbon atoms, a cycloalkyl group, and an aryl group, and R ₃ and R ₄ are bonded to each other. Thus, it is preferable to form a ring described in detail below.

Examples of the ring formed by combining R ₃ and R ₄ with each other include, for example, an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocyclic ring, or a combination of two or more of these rings The polycyclic fused ring formed can be mentioned.

These rings may have a substituent. Examples of such a substituent include an alkyl group, a cycloalkyl group, an alkoxy group, a carboxyl group, an aryl group, an alkoxymethyl group, an acyl group, and an alkoxycarbonyl group. , A nitro group, a halogen, or a hydroxy group.

Specific examples of the ring formed by combining R ₃ and R ₄ with each other are given below. * In a formula represents a connection part with a phenol nucleus.

In one embodiment of the present invention, R ₃ and R ₄ in the general formula (I) are preferably bonded to form a polycyclic fused ring containing a benzene ring, and more preferably a fluorene structure is formed. preferable.
In the compound represented by the general formula (I), for example, R ₃ and R ₄ in the general formula (I) are bonded to form a fluorene structure represented by the following general formula (Ia). It is preferable.

Where
R ₇ and R ₈ each independently represents a substituent. Examples of the substituent include an alkyl group, a cycloalkyl group, an alkoxy group, an aryl group, an alkoxymethyl group, an acyl group, an alkoxycarbonyl group, a nitro group, a halogen, and a hydroxy group.
n1 and n2 each independently represents an integer of 0 to 4, preferably 0 or 1.
* Represents a linking site with a phenol nucleus.

In one embodiment of the present invention, the compound represented by the general formula (I) is also preferably represented by the following general formula (Ib).

Where
R _1b and R _6b each independently represents an alkyl group having 5 or less carbon atoms.
R _2b and R _5b each independently represents an alkyl group having 6 or less carbon atoms or a cycloalkyl group having 3 to 12 carbon atoms.
Z represents an atomic group necessary for forming a ring together with the carbon atom in the formula.
The ring formed by Z together with the carbon atom in the formula is the same as that described for the ring formed by combining R ₃ and R ₄ with each other in the description of the general formula (I).

Specific examples of the compound represented by the general formula (I) are shown below.

In the present invention, the content of the crosslinking agent (C) is preferably 3 to 65% by mass, more preferably 5 to 50% by mass in the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition. More preferably, it is 10 to 30% by mass. By setting the content of the compound (C) in the range of 3 to 65% by mass, it is possible to further prevent the remaining film ratio and the resolution from being lowered.

In this invention, a crosslinking agent (C) may be used independently and may be used in combination of 2 or more type.
For example, in addition to the above-mentioned phenol derivative, in the case where another crosslinking agent (C ′), for example, the above-mentioned compound having an N-alkoxymethyl group is used in combination, the ratio of the above-mentioned phenol derivative to the other compound (C ′) is The molar ratio is usually 90/10 to 20/80, preferably 85/15 to 40/60, more preferably 80/20 to 50/50.

[4] (D) Compound that differs from compound (A) and generates an acid upon irradiation with actinic rays or radiation The actinic ray-sensitive or radiation-sensitive resin composition of the present invention comprises an acid upon irradiation with actinic rays or radiation. As a compound generating photoacid (photoacid generator), it may contain a compound (hereinafter also referred to as “compound (D)”) that generates an acid upon irradiation with actinic rays or radiation, which is different from the compound (A). Good.
Preferred forms of compound (D) include onium compounds. Examples of such onium compounds include sulfonium salts, iodonium salts, phosphonium salts, and the like.

As another preferred form of the compound (D), a compound that generates sulfonic acid, imidic acid, or methide acid upon irradiation with actinic rays or radiation can be exemplified. Examples of the photoacid generator in that form include sulfonium salts, iodonium salts, phosphonium salts, oxime sulfonates, imide sulfonates, and the like.

The compound (D) may be in the form of a low molecular compound or may be incorporated in a part of the polymer. Further, the form of the low molecular compound and the form incorporated in a part of the polymer may be used in combination.
When the compound (D) is in the form of a low molecular compound, the molecular weight is preferably 3000 or less, more preferably 2000 or less, and even more preferably 1000 or less.
When the compound (D) is in a form incorporated in a part of the polymer, it may be incorporated in a part of the resin (B) as described above or in a resin different from the resin (B). May be.

The compound (D) is preferably a compound that generates an acid upon irradiation with an electron beam or extreme ultraviolet rays.
In the present invention, preferred onium compounds include sulfonium compounds represented by the following general formula (7) or iodonium compounds represented by the general formula (8).

In general formulas (7) and (8),
R _a1 , R _a2 , R _a3 , R _a4 and R _a5 each independently represent an organic group.

X ⁻ represents an organic anion.

Hereinafter, the sulfonium compound represented by the general formula (7) and the iodonium compound represented by the general formula (8) will be described in more detail.

R _a1 to R _a3 of the general formula (7) and R _a4 and R _a5 of the general formula (8) each independently represent an organic group, preferably at least one of R _a1 to R _a3 , In addition, at least one of R _a4 and R _{a5 is} an aryl group. As the aryl group, a phenyl group and a naphthyl group are preferable, and a phenyl group is more preferable.

Examples of the organic anion X ^{− in} the general formulas (7) and (8) include a sulfonate anion, a carboxylate anion, a bis (alkylsulfonyl) amide anion, and a tris (alkylsulfonyl) methide anion. Organic anions represented by general formula (9), (10) or (11), more preferably organic anions represented by the following general formula (9).

In the general formulas (9), (10) and (11), Rc ₁ , Rc ₂ , Rc ₃ and Rc ₄ each represents an organic group.

The organic anion of X ⁻ corresponds to sulfonic acid, imide acid, methide acid, etc., which are acids generated by irradiation with actinic rays or radiation such as electron beams and extreme ultraviolet rays.

Examples of the organic group of Rc ₁ to Rc ₄ include an alkyl group, a cycloalkyl group, an aryl group, or a group in which a plurality of these are connected. More preferably among these organic groups, the alkyl group substituted at the 1-position with a fluorine atom or a fluoroalkyl group, a cycloalkyl group substituted with a fluorine atom or a fluoroalkyl group, a phenyl group substituted with a fluorine atom or a fluoroalkyl group It is. A plurality of the organic groups of Rc ₂ to Rc ₄ may be connected to each other to form a ring, and the group to which the plurality of organic groups are connected includes an alkylene group substituted with a fluorine atom or a fluoroalkyl group Is preferred. By having a fluorine atom or a fluoroalkyl group, the acidity of the acid generated by light irradiation is increased and the sensitivity is improved. However, the terminal group preferably does not contain a fluorine atom as a substituent.

In one embodiment of the present invention, the compound (D) is a compound that generates the acid represented by the general formula (IIIB) or (IVB) described in the compound (A) by irradiation with an actinic ray or radiation. It is preferable that In this case, the anion of X ^{− in} the general formulas (7) and (8) can be an anion that generates an organic acid represented by the following general formula (IIIB) or (IVB).
Specific examples and preferred examples of the anion that generates the organic acid represented by the general formula (IIIB) or (IVB) are the same as those described for the compound (A).

The compound (D) is an acid (more preferably sulfone) having a volume of 130 to ³ or more from the viewpoint of suppressing the diffusion of the acid generated by exposure to the non-exposed part and improving the resolution and pattern shape. is preferably a compound capable of generating an acid), more preferably the acid (more preferably a volume 190 Å ³ or more in size is a compound capable of generating a sulfonic acid), volume 270 Å ³ or more the size of the acid (more A compound that preferably generates a sulfonic acid) is even more preferable, and a compound that generates an acid having a volume of 400 ³ or more (more preferably a sulfonic acid) is particularly preferable. However, from the viewpoint of sensitivity and coating solvent solubility, the volume is preferably 2000 ³ or less, and more preferably 1500 ³ or less. The value of the volume is determined based on the method described for the compound (A).

Specific examples of compound (D) are shown below. In addition, the calculated value of the volume is appended to a part of the example (unit ^{３ 3} ). In addition, the calculated value calculated | required here is a volume value of the acid which the proton couple | bonded with the anion part.

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may or may not contain the compound (D), but when it is contained, the content of the compound (D) is the actinic ray-sensitive or sensitive. It is preferably 0.1 to 20% by mass, more preferably 0.5 to 15% by mass, and further preferably 1 to 10% by mass based on the total solid content of the radiation resin composition.
A compound (D) can be used individually by 1 type or in combination of 2 or more types.

[5] Basic compound The actinic ray-sensitive or radiation-sensitive resin composition of the present invention preferably contains a basic compound as an acid scavenger. By using a basic compound, a change in performance over time from exposure to post-heating can be reduced. Such basic compounds are preferably organic basic compounds, and more specifically, aliphatic amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxyl group, and sulfonyl groups. A nitrogen-containing compound having a hydroxy group, a nitrogen-containing compound having a hydroxy group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like. An amine oxide compound (a compound having a methyleneoxy unit and / or an ethyleneoxy unit is preferable, for example, a compound described in JP-A-2008-102383), an ammonium salt (preferably a hydroxide or a carboxylate). More specifically, a tetraalkylammonium hydroxide represented by tetrabutylammonium hydroxide is preferable from the viewpoint of LER.

Furthermore, a compound whose basicity is increased by the action of an acid can also be used as one kind of basic compound.

Specific examples of amines include tri-n-butylamine, tri-n-pentylamine, tri-n-octylamine, tri-n-decylamine, triisodecylamine, dicyclohexylmethylamine, tetradecylamine, pentadecylamine , Hexadecylamine, octadecylamine, didecylamine, methyloctadecylamine, dimethylundecylamine, N, N-dimethyldodecylamine, methyldioctadecylamine, N, N-dibutylaniline, N, N-dihexylaniline, 2,6- Diisopropylaniline, 2,4,6-tri (t-butyl) aniline, triethanolamine, N, N-dihydroxyethylaniline, tris (methoxyethoxyethyl) amine, and columns 3, 60 of US Pat. No. 6,040,112. Line Compounds exemplified below, 2- [2- {2- (2,2-dimethoxy-phenoxyethoxy) ethyl} -bis- (2-methoxyethyl)]-amine, and US Patent Application Publication No. 2007 / 02245539A1 And compounds (C1-1) to (C3-3) exemplified in paragraph <0066> of the document. Compounds having a nitrogen-containing heterocyclic structure include 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, N-hydroxyethylpiperidine, bis (1,2,2,6,6-pentamethyl-4-piperidyl ) Sebacate, 4-dimethylaminopyridine, antipyrine, hydroxyantipyrine, 1,5-diazabicyclo [4.3.0] non-5-ene, 1,8-diazabicyclo [5.4.0] -undec-7-ene And tetrabutylammonium hydroxide.

Photodegradable basic compounds (initially basic nitrogen atoms act as a base and show basicity, but are decomposed by irradiation with actinic rays or radiation to have amphoteric compounds having basic nitrogen atoms and organic acid sites. A compound in which basicity is reduced or eliminated by generating ionic compounds and neutralizing them in the molecule, for example, Japanese Patent No. 3577743, Japanese Patent Application Laid-Open No. 2001-215589, Japanese Patent Application Laid-Open No. 2001-166476, An onium salt described in JP 2008-102383 A and JP 2013-64970 A) and a photobase generator (for example, a compound described in JP 2010-243773 A) are also used as appropriate.

Among these basic compounds, ammonium salts are preferable from the viewpoint of improving resolution.
In this invention, a basic compound may be used independently and may be used in combination of 2 or more type.

The content of the basic compound used in the present invention is preferably from 0.01 to 10% by mass, more preferably from 0.03 to 5% by mass, based on the total solid content of the composition of the present invention. 05 to 3% by mass is particularly preferred.

[6] Hydrophobic Resin The composition of the present invention may contain a hydrophobic resin (hereinafter also referred to as “hydrophobic resin (E)”). The hydrophobic resin (E) is preferably different from the resin (B).
The hydrophobic resin (E) is preferably designed to be unevenly distributed at the interface. However, unlike the surfactant, it is not always necessary to have a hydrophilic group in the molecule, and the polar / nonpolar substance is mixed uniformly. You don't have to contribute to
As an effect of adding a hydrophobic resin, control of the static / dynamic contact angle of the resist film surface to water, improvement of immersion liquid followability, and suppression of outgas, especially when immersion exposure is adopted. And so on.

The hydrophobic resin (E) is any one of “fluorine atom”, “silicon atom”, and “CH ₃ partial structure contained in the side chain portion of the resin” from the viewpoint of uneven distribution in the film surface layer. It is preferable to have the above, and it is more preferable to have two or more.
When the hydrophobic resin (E) contains a fluorine atom and / or a silicon atom, the fluorine atom and / or silicon atom in the hydrophobic resin (E) may be contained in the main chain of the resin. , May be contained in the side chain.

When the hydrophobic resin (E) contains a fluorine atom, the partial structure having a fluorine atom is a resin having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom. Preferably there is.
The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom. It may have a substituent other than.
A cycloalkyl group having a fluorine atom and an aryl group having a fluorine atom are a cycloalkyl group in which one hydrogen atom is substituted with a fluorine atom and an aryl group having a fluorine atom, respectively, and further a substituent other than a fluorine atom is substituted. You may have.

Preferred examples of the alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, and the aryl group having a fluorine atom include groups represented by the following general formulas (F2) to (F4). The invention is not limited to this.

In general formulas (F2) to (F4),
R ₅₇ to R ₆₈ each independently represents a hydrogen atom, a fluorine atom or an alkyl group (straight or branched). Provided that at least one of R ₅₇ to R ₆₁ , at least one of R ₆₂ to R ₆₄ , and at least one of R ₆₅ to R ₆₈ are each independently a fluorine atom or at least one hydrogen atom is a fluorine atom. It represents a substituted alkyl group (preferably having 1 to 4 carbon atoms).
All of R ₅₇ to R ₆₁ and R ₆₅ to R ₆₇ are preferably fluorine atoms. R ₆₂ , R ₆₃ and R ₆₈ are preferably an alkyl group (preferably having 1 to 4 carbon atoms) in which at least one hydrogen atom is substituted with a fluorine atom, and preferably a perfluoroalkyl group having 1 to 4 carbon atoms. Further preferred. R ₆₂ and R ₆₃ may be connected to each other to form a ring.

The hydrophobic resin (E) may contain a silicon atom. The partial structure having a silicon atom is preferably a resin having an alkylsilyl structure (preferably a trialkylsilyl group) or a cyclic siloxane structure.
Examples of the repeating unit having a fluorine atom or a silicon atom include those exemplified in US2012 / 0251948A1 [0519].

Further, as described above, the hydrophobic resin (E) also preferably includes a CH ₃ partial structure in the side chain portion.
Here, CH ₃ partial structure contained in the side chain portion in the hydrophobic resin (E) (hereinafter, simply referred to as "side chain CH ₃ partial structure") The, CH ₃ partial structure an ethyl group, and a propyl group having Is included.
On the other hand, a methyl group directly bonded to the main chain of the hydrophobic resin (E) (for example, α-methyl group of a repeating unit having a methacrylic acid structure) is caused by the influence of the main chain on the surface of the hydrophobic resin (E). Since the contribution to uneven distribution is small, it is not included in this “CH ₃ partial structure”.

More specifically, the hydrophobic resin (E) is a repeating unit derived from a monomer having a polymerizable moiety having a carbon-carbon double bond, such as a repeating unit represented by the following general formula (M). In the case where R ₁₁ to R ₁₄ are CH ₃ “as is”, the CH ₃ is not included in the CH ₃ partial structure of the side chain moiety.
On the other hand, the CH ₃ partial structure existing from the CC main chain via some atom shall correspond to the “side chain CH ₃ partial structure”. For example, when R ₁₁ is an ethyl group (CH ₂ CH ₃ ), it has “one” “CH ₃ partial structure”.

In the general formula (M),
R ₁₁ to R ₁₄ each independently represents a side chain portion.
Examples of R ₁₁ to R _{14 in the} side chain portion include a hydrogen atom and a monovalent organic group.
Examples of the monovalent organic group for R ₁₁ to R ₁₄ include an alkyl group, a cycloalkyl group, an aryl group, an alkyloxycarbonyl group, a cycloalkyloxycarbonyl group, an aryloxycarbonyl group, an alkylaminocarbonyl group, and a cycloalkylaminocarbonyl. Group, an arylaminocarbonyl group, and the like, and these groups may further have a substituent.

The hydrophobic resin (E) is preferably a resin having a repeating unit having a CH ₃ partial structure in the side chain portion, and as such a repeating unit, a repeating unit represented by the following general formula (II), and It is more preferable to have at least one repeating unit (x) among repeating units represented by the following general formula (III).

Hereinafter, the repeating unit represented by the general formula (II) will be described in detail.

In the general formula (II), X _b1 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, R ₂ has one or more CH ₃ partial structure represents a stable organic radical to acid.

The alkyl group of _Xb1 preferably has 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, and a trifluoromethyl group, and a methyl group is preferable.
X _b1 is preferably a hydrogen atom or a methyl group.
Examples of R ₂ include an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an aryl group, and an aralkyl group having one or more CH ₃ partial structures. The above cycloalkyl group, alkenyl group, cycloalkenyl group, aryl group and aralkyl group may further have an alkyl group as a substituent.
R ₂ is preferably an alkyl group or an alkyl-substituted cycloalkyl group having one or more CH ₃ partial structures.
The acid-stable organic group having one or more CH ₃ partial structures as R ₂ preferably has 2 or more and 10 or less CH ₃ partial structures, and more preferably 2 or more and 8 or less.
Preferred specific examples of the repeating unit represented by the general formula (II) are shown below. Note that the present invention is not limited to this.

The repeating unit represented by the general formula (II) is preferably an acid-stable (non-acid-decomposable) repeating unit, and specifically, a group that decomposes by the action of an acid to generate a polar group. It is preferable that it is a repeating unit which does not have.
Hereinafter, the repeating unit represented by formula (III) will be described in detail.

In the above general formula (III), X _b2 represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom, R ₃ represents an acid-stable organic group having one or more CH ₃ partial structures, n represents an integer of 1 to 5.
The alkyl group of _Xb2 is preferably an alkyl group having 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, and a trifluoromethyl group, and a hydrogen atom is preferable.
X _b2 is preferably a hydrogen atom.
Since R ₃ is an organic group that is stable against acid, more specifically, R ₃ is preferably an organic group that does not have an “acid-decomposable group” described later.

R ₃ includes an alkyl group having one or more CH ₃ partial structures.
The acid-stable organic group having one or more CH ₃ partial structures as R ₃ preferably has 1 or more and 10 or less CH ₃ partial structures, more preferably 1 or more and 8 or less, More preferably, it is 1 or more and 4 or less.
n represents an integer of 1 to 5, more preferably an integer of 1 to 3, and still more preferably 1 or 2.

Preferred specific examples of the repeating unit represented by the general formula (III) are given below. Note that the present invention is not limited to this.

The repeating unit represented by the general formula (III) is preferably an acid-stable (non-acid-decomposable) repeating unit, and specifically, a group that decomposes by the action of an acid to generate a polar group. It is preferable that it is a repeating unit which does not have.

In the case where the hydrophobic resin (E) contains a CH ₃ partial structure in the side chain portion, and particularly when it does not have a fluorine atom and a silicon atom, the repeating unit represented by the general formula (II), and The content of at least one repeating unit (x) among the repeating units represented by the general formula (III) is preferably 90 mol% or more based on all repeating units of the hydrophobic resin (E). More preferably, it is 95 mol% or more. The content of the repeating unit (x) is usually 100 mol% or less with respect to all the repeating units of the hydrophobic resin (E).

The hydrophobic resin (E) comprises at least one repeating unit (x) among the repeating unit represented by the general formula (II) and the repeating unit represented by the general formula (III). ), The surface free energy of the hydrophobic resin (E) is increased. As a result, the hydrophobic resin (E) is less likely to be unevenly distributed on the surface of the resist film, and it is possible to improve the static / dynamic contact angle of the resist film with respect to water, thereby improving the immersion liquid followability. it can.

In addition, the hydrophobic resin (E) includes the following (x) to (z) both when (i) contains a fluorine atom and / or a silicon atom, and (ii) contains a CH ₃ partial structure in the side chain portion. ) At least one group selected from the group.
(X) an acid group,
(Y) a group having a lactone structure, an acid anhydride group, or an acid imide group,
(Z) A group that decomposes by the action of an acid.

Examples of the acid group (x) include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, an (alkylsulfonyl) (alkylcarbonyl) methylene group, and an (alkylsulfonyl) (alkyl Carbonyl) imide group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) A methylene group etc. are mentioned.
Preferred acid groups include fluorinated alcohol groups (preferably hexafluoroisopropanol groups), sulfonimide groups, and bis (alkylcarbonyl) methylene groups.

The repeating unit having an acid group (x) includes a repeating unit in which an acid group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or a resin having a linking group. Examples include a repeating unit in which an acid group is bonded to the main chain, and a polymerization initiator or chain transfer agent having an acid group can be introduced at the end of the polymer chain at the time of polymerization. preferable. The repeating unit having an acid group (x) may have at least one of a fluorine atom and a silicon atom.
The content of the repeating unit having an acid group (x) is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, still more preferably from 5 to 5%, based on all repeating units in the hydrophobic resin (E). 20 mol%.
Specific examples of the repeating unit having an acid group (x) are shown below, but the present invention is not limited thereto. In the formula, Rx represents a hydrogen atom, CH ₃ , CF ₃ , or CH ₂ OH.

As the group having a lactone structure, the acid anhydride group, or the acid imide group (y), a group having a lactone structure is particularly preferable.
The repeating unit containing these groups is a repeating unit in which this group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid ester and methacrylic acid ester. Alternatively, this repeating unit may be a repeating unit in which this group is bonded to the main chain of the resin via a linking group. Or this repeating unit may be introduce | transduced into the terminal of resin using the polymerization initiator or chain transfer agent which has this group at the time of superposition | polymerization.

The content of the repeating unit having a group having a lactone structure, an acid anhydride group, or an acid imide group (y) is 1 to 100 mol% based on all repeating units in the hydrophobic resin (E). Is preferable, more preferably 3 to 98 mol%, still more preferably 5 to 95 mol%.

In the hydrophobic resin (E), the group (z) decomposing by the action of acid in the repeating unit having the group (z) decomposing by the action of acid decomposes by the action of the acid to generate an alkali-soluble group. It is preferably a group.

Alkali-soluble groups include phenolic hydroxyl groups, carboxyl groups, fluorinated alcohol groups, sulfonic acid groups, sulfonamido groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, (alkylsulfonyl) (alkylcarbonyl) imides. Group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) methylene group, etc. Is mentioned.
Preferred alkali-soluble groups include phenolic hydroxyl groups, carboxyl groups, fluorinated alcohol groups (preferably hexafluoroisopropanol), and sulfonic acid groups.
A group preferable as a group capable of decomposing by the action of an acid (acid-decomposable group) is a group obtained by substituting a hydrogen atom of these alkali-soluble groups with a group capable of leaving with an acid.

Examples of the group capable of leaving with an acid include —C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —C (R ₀₁ ) (R ₀₂ ) (OR ₃₉ ), —C (═O) —O—. C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —C (R ₀₁ ) (R ₀₂ ) —C (═O) —O—C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —CH ( R ₃₆ ) (Ar) and the like.
In the formula, R ₃₆ to R ₃₉ each independently represents an alkyl group, a monovalent aliphatic hydrocarbon ring group, a monovalent aromatic ring group, a group in which an alkylene group and a monovalent aromatic ring group are combined, or an alkenyl group. To express. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.
R ₀₁ to R ₀₂ each independently represents a hydrogen atom, an alkyl group, a monovalent aliphatic hydrocarbon ring group, a monovalent aromatic ring group, a group in which an alkylene group and a monovalent aromatic ring group are combined, or an alkenyl group Represents.
Ar represents a monovalent aromatic ring group.
The alkyl group of R ₃₆ to R ₃₉ , R ₀₁ and R ₀₂ is preferably an alkyl group having 1 to 8 carbon atoms, for example, methyl group, ethyl group, propyl group, n-butyl group, sec-butyl group, hexyl Group, octyl group and the like.

The monovalent aliphatic hydrocarbon ring group represented by R ₃₆ to R ₃₉ , R ₀₁ and R ₀₂ may be monocyclic or polycyclic. The monocyclic type is preferably an aliphatic hydrocarbon ring group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. As the polycyclic type, an aliphatic hydrocarbon ring group having 6 to 20 carbon atoms is preferable. For example, an adamantyl group, norbornyl group, isobornyl group, camphanyl group, dicyclopentyl group, α-pinel group, tricyclodecanyl group, A tetracyclododecyl group, an androstanyl group, etc. can be mentioned. In addition, a part of carbon atoms in the aliphatic hydrocarbon ring group may be substituted with a hetero atom such as an oxygen atom.
The monovalent aromatic ring group of R ₃₆ to R ₃₉ , R _01, R ₀₂ and Ar is preferably a monovalent aromatic ring group having 6 to 10 carbon atoms, for example, an aryl such as a phenyl group, a naphthyl group or an anthryl group. And a divalent aromatic ring group containing a heterocyclic ring such as a group, thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, thiazole.

The group in which the alkylene group of R ₃₆ to R ₃₉ , R ₀₁ and R ₀₂ and the monovalent aromatic ring group are combined is preferably an aralkyl group having 7 to 12 carbon atoms, such as a benzyl group, a phenethyl group, or a naphthylmethyl group. Etc.
The alkenyl group of R ₃₆ to R ₃₉ , R ₀₁ and R ₀₂ is preferably an alkenyl group having 2 to 8 carbon atoms, and examples thereof include a vinyl group, an allyl group, a butenyl group, and a cyclohexenyl group.
The ring formed by combining R ₃₆ and R ₃₇ with each other may be monocyclic or polycyclic. The monocyclic type is preferably an aliphatic hydrocarbon ring structure having 3 to 8 carbon atoms, and examples thereof include a cyclopropane structure, a cyclobutane structure, a cyclopentane structure, a cyclohexane structure, a cycloheptane structure, and a cyclooctane structure. Can do. As the polycyclic type, an aliphatic hydrocarbon ring structure having 6 to 20 carbon atoms is preferable, and examples thereof include an adamantane structure, a norbornane structure, a dicyclopentane structure, a tricyclodecane structure, and a tetracyclododecane structure. A part of carbon atoms in the aliphatic hydrocarbon ring structure may be substituted with a hetero atom such as an oxygen atom.

Each of the groups as R ₃₆ to R ₃₉ , R ₀₁ , R ₀₂ , and Ar may have a substituent. Examples of the substituent include an alkyl group and a monovalent aliphatic hydrocarbon ring group. , Aryl group, amino group, amide group, ureido group, urethane group, hydroxyl group, carboxyl group, halogen atom, alkoxy group, thioether group, acyl group, acyloxy group, alkoxycarbonyl group, cyano group, nitro group, etc. The number of carbon atoms of the substituent is preferably 8 or less.

The repeating unit having a group (z) that is decomposed by the action of an acid may have at least one of a fluorine atom and a silicon atom.

In the hydrophobic resin (E), the content of the repeating unit having a group (z) that is decomposed by the action of an acid is preferably 1 to 80 mol% with respect to all the repeating units in the hydrophobic resin (E). More preferably, it is 10 to 80 mol%, and still more preferably 20 to 60 mol%.
The hydrophobic resin (E) may further have a repeating unit different from the above-described repeating unit.

The repeating unit containing a fluorine atom is preferably 10 to 100 mol%, more preferably 30 to 100 mol%, based on all repeating units contained in the hydrophobic resin (E). Further, the repeating unit containing a silicon atom is preferably 10 to 100 mol%, more preferably 20 to 100 mol% in all repeating units contained in the hydrophobic resin (E).

On the other hand, particularly when the hydrophobic resin (E) contains a CH ₃ partial structure in the side chain portion, a mode in which the hydrophobic resin (E) does not substantially contain a fluorine atom and a silicon atom is also preferable. Moreover, it is preferable that hydrophobic resin (E) is substantially comprised only by the repeating unit comprised only by the atom chosen from a carbon atom, an oxygen atom, a hydrogen atom, a nitrogen atom, and a sulfur atom.

The weight average molecular weight in terms of standard polystyrene of the hydrophobic resin (E) is preferably 1,000 to 100,000, more preferably 1,000 to 50,000.
Moreover, the hydrophobic resin (E) may be used alone or in combination.
The content of the hydrophobic resin (E) in the composition is preferably 0.01 to 10% by mass and more preferably 0.05 to 8% by mass with respect to the total solid content in the composition of the present invention.

In the hydrophobic resin (E), the residual monomer or oligomer component is preferably 0.01 to 5% by mass, more preferably 0.01 to 3% by mass. The molecular weight distribution (Mw / Mn, also referred to as dispersity) is preferably in the range of 1 to 5, more preferably in the range of 1 to 3.

As the hydrophobic resin (E), various commercially available products can be used, and the hydrophobic resin (E) can be synthesized according to a conventional method (for example, radical polymerization).

[7] Surfactant The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a surfactant in order to improve coatability. Examples of surfactants include, but are not limited to, polyoxyethylene alkyl ethers, polyoxyethylene alkyl allyl ethers, polyoxyethylene polyoxypropylene block copolymers, sorbitan fatty acid esters, polyoxyethylene Nonionic surfactants such as sorbitan fatty acid esters, Megafac R08 and Megafac F171 manufactured by DIC Corporation, Florard FC430 (manufactured by Sumitomo 3M), Surfinol E1004 (manufactured by Asahi Glass), PF656 and PF6320 manufactured by OMNOVA And an organosiloxane polymer such as polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.).
When the actinic ray-sensitive or radiation-sensitive resin composition contains a surfactant, the amount of the surfactant used is preferably 0.0001 to 2 mass with respect to the total amount of the composition (excluding the solvent). %, More preferably 0.0005 to 1% by mass.

[8] Organic carboxylic acid The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may contain an organic carboxylic acid. Examples of such organic carboxylic acid compounds include aliphatic carboxylic acid, alicyclic carboxylic acid, unsaturated aliphatic carboxylic acid, oxycarboxylic acid, alkoxycarboxylic acid, ketocarboxylic acid, benzoic acid derivative, phthalic acid, terephthalic acid, isophthalic acid , 2-naphthoic acid, 1-hydroxy-2-naphthoic acid, 2-hydroxy-3-naphthoic acid, and the like, but when electron beam exposure is performed under vacuum, the resist film surface volatilizes and draws. As a preferable compound, aromatic organic carboxylic acids, among which, for example, benzoic acid, 1-hydroxy-2-naphthoic acid and 2-hydroxy-3-naphthoic acid are preferable as they may contaminate the inside of the chamber. .

The amount of the organic carboxylic acid is preferably in the range of 0.01 to 10 parts by mass, more preferably 0.01 to 5 parts by mass, and still more preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the alkali-soluble resin. 3 parts by mass.

If necessary, the composition of the present invention may further comprise a dye, a plasticizer, an acid proliferating agent (WO95 / 29968, WO98 / 24000, JP-A-8-305262, No. 9-34106, JP-A-8-248561, JP-A-8-503082, JP-A-5,445,917, JP-A-8-503081, JP-A-5-503081 534,393, US Pat. No. 5,395,736, US Pat. No. 5,741,630, US Pat. No. 5,334,489, US Pat. No. 5,582 No. 956, US Pat. No. 5,578,424, US Pat. No. 5,453,345, US Pat. No. 5,445,917, EP 665,960 , European Patent No. No. 57,628, European Patent No. 665,961, US Pat. No. 5,667,943, JP-A-10-1508, JP-A-10-282642, JP-A-9-512498. No. 2000, No. 2000-62337, No. 2005-17730, No. 2008-209889, etc.) and the like. Examples of these compounds include the respective compounds described in JP-A-2008-268935.

[9] Carboxylic acid onium salt The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may contain a carboxylic acid onium salt. Examples of the carboxylic acid onium salt include a carboxylic acid sulfonium salt, a carboxylic acid iodonium salt, and a carboxylic acid ammonium salt. In particular, the carboxylic acid onium salt is preferably a carboxylic acid iodonium salt or a carboxylic acid sulfonium salt. Furthermore, in the present invention, it is preferable that the carboxylate residue of the carboxylic acid onium salt does not contain an aromatic group or a carbon-carbon double bond. A particularly preferred anion moiety is a linear, branched, monocyclic or polycyclic alkylcarboxylic acid anion having 1 to 30 carbon atoms. More preferably, an anion of a carboxylic acid in which some or all of these alkyl groups are fluorine-substituted is preferable. The alkyl chain may contain an oxygen atom. This ensures transparency with respect to light of 220 nm or less, improves sensitivity and resolution, and improves density dependency and exposure margin.

[10] Solvent The actinic ray-sensitive or radiation-sensitive resin composition of the present invention usually contains a solvent.
Examples of the solvent used in the composition of the present invention include ethylene glycol monoethyl ether acetate, cyclohexanone, 2-heptanone, propylene glycol monomethyl ether (PGME, also known as 1-methoxy-2-propanol), propylene glycol monomethyl ether acetate. (PGMEA, also known as 1-methoxy-2-acetoxypropane), propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl β-methoxyisobutyrate, butyric acid Ethyl, propyl butyrate, methyl isobutyl ketone, ethyl acetate, isoamyl acetate, ethyl lactate, methyl 2-hydroxyisobutyrate, butyl propionate, isobutyrate Isobutyl, toluene, xylene, cyclohexyl acetate, diacetone alcohol, N- methylpyrrolidone, N, N- dimethylformamide, .gamma.-butyrolactone, N, N- dimethylacetamide, propylene carbonate, and ethylene carbonate is preferred. These solvents are used alone or in combination.

It is preferable that the solid content of the actinic ray-sensitive or radiation-sensitive resin composition is dissolved in the above solvent and is dissolved at a solid content concentration of 1 to 40% by mass. More preferably, it is 1 to 30% by mass, and further preferably 3 to 20% by mass.

The present invention also relates to a resist film formed by the actinic ray-sensitive or radiation-sensitive resin composition of the present invention. Such a resist film is applied, for example, on a support such as a substrate. Is formed. The thickness of this resist film is preferably 0.02 to 0.1 μm. As a method for coating on the substrate, spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating, etc. are applied on the substrate, but spin coating is preferred, and the number of rotations is 1000 to 3000 rpm is preferred. The coating film is prebaked at 60 to 150 ° C. for 1 to 20 minutes, preferably at 80 to 120 ° C. for 1 to 10 minutes to form a thin film.

For example, in the case of a semiconductor wafer, a silicon wafer can be used as the material constituting the substrate to be processed and its outermost layer. Examples of the material that becomes the outermost layer include Si, SiO ₂ , SiN, SiON, TiN, and WSi. , BPSG, SOG, organic antireflection film, and the like.

The present invention also relates to a mask blank provided with the resist film obtained as described above, in other words, a resist-coated mask blank formed with a resist film.
The resist-coated mask blank has a mask blank and a resist film formed on the mask blank. Photomask blanks have a substrate and are used, for example, to produce a photomask. Examples of the substrate of the photomask blank include a transparent substrate such as quartz and calcium fluoride. In general, a light shielding film, an antireflection film, a phase shift film, and additional functional films such as an etching stopper film and an etching mask film are laminated on the substrate. As a material for the functional film, a film containing a transition metal such as silicon or chromium, molybdenum, zirconium, tantalum, tungsten, titanium, niobium is laminated. In addition, as a material used for the outermost layer, silicon or a material containing oxygen and / or nitrogen in silicon as a main constituent material, and further a silicon compound material containing a transition metal-containing material as a main constituent material Or a transition metal, in particular, one or more selected from chromium, molybdenum, zirconium, tantalum, tungsten, titanium, niobium, etc., or a material further containing one or more elements selected from oxygen, nitrogen, and carbon The transition metal compound material is exemplified.

The light shielding film may be a single layer, but more preferably has a multilayer structure in which a plurality of materials are applied. In the case of a multilayer structure, the thickness of the film per layer is not particularly limited, but is preferably 5 nm to 100 nm, and more preferably 10 nm to 80 nm. The thickness of the entire light shielding film is not particularly limited, but is preferably 5 nm to 200 nm, and more preferably 10 nm to 150 nm.

Generally, among these materials, when pattern formation is performed using a chemically amplified resist composition on a photomask blank having a chromium-containing material containing oxygen or nitrogen as the outermost layer, a constricted shape is formed near the substrate. However, when the present invention is used, the undercut problem can be improved as compared with the conventional one.

The resist film is irradiated with actinic rays or radiation (such as an electron beam), and preferably baked (usually 80 to 150 ° C., more preferably 90 to 130 ° C., usually 1 to 20 minutes, more preferably 1 to 10 minutes). After developing, develop. Thereby, a good pattern can be obtained. Then, using this pattern as a mask, etching processing, ion implantation, and the like are performed as appropriate to create a semiconductor microcircuit, an imprint mold structure, a photomask, and the like.

Regarding the process for producing an imprint mold using the composition of the present invention, for example, Japanese Patent No. 4109085, Japanese Patent Application Laid-Open No. 2008-162101, and “Nanoimprint Basics and Technology Development / Application Deployment” -Nanoimprint substrate technology and latest technology development-edited by Yoshihiko Hirai (Frontier Publishing) ".

The present invention includes (i) a step of forming the resist film, (ii) a step of exposing the resist film, and (iii) developing the exposed resist film using a developer to form a pattern. The present invention also relates to a pattern forming method including a step, for example, a step of exposing a mask blank (resist-coated mask blank) including the resist film, and a pattern obtained by developing the exposed resist-coated mask blank using a developer. The present invention also relates to a pattern forming method including a step of forming the pattern.
In the above exposure, the wavelength of the light source used in the exposure apparatus is not limited, but examples include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light (EUV light), X-rays, and electron beams. . The light source wavelength is preferably far ultraviolet light with a wavelength of preferably 250 nm or less, more preferably 220 nm or less, and particularly preferably 1 to 200 nm. Specifically, KrF excimer laser (248 nm), ArF excimer laser (193 nm), Examples thereof include F ₂ excimer laser (157 nm), X-rays, EUV light (13 nm), and electron beams.
In the present invention, the exposure is preferably performed using X-rays, electron beams or EUV light.

In the manufacture of a precision integrated circuit element or the like, the exposure (pattern formation step) on the resist film is preferably performed by first exposing the resist film of the present invention in a pattern with an electron beam or extreme ultraviolet light (EUV light). If the exposure amount of the electron beam, usually 0.1 ~ 20 [mu] C / cm ^2, preferably about 3 to 10 [mu] C / cm ² or so, if the extreme ultraviolet light, usually 0.1 ~ 20 mJ / cm ^2, preferably about 3 to It exposes so that it may become about 15 mJ / cm < ² >. Next, post-exposure heating (post-exposure baking) is performed on a hot plate at 60 to 150 ° C. for 1 to 20 minutes, preferably 80 to 120 ° C. for 1 to 10 minutes, followed by development, rinsing and drying. Form a pattern.

As the developer, an alkali developer or a developer containing an organic solvent (hereinafter also referred to as an organic developer) can be used.
Examples of the alkali developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine and Secondary amines such as di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, and fourth amines such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. Examples include alkaline aqueous solutions containing quaternary ammonium salts or cyclic amines such as pyrrole and piperidine.

An appropriate amount of alcohols and / or surfactant may be added to the alkaline developer.
The concentration of the alkali developer is usually from 0.1 to 20% by mass. The pH of the alkali developer is usually from 10.0 to 15.0.
The developer is preferably 0.1 to 5% by mass, more preferably 2 to 3% by mass aqueous alkaline solution such as tetramethylammonium hydroxide (TMAH) and tetrabutylammonium hydroxide (TBAH), preferably 0.1%. The development is performed by a conventional method such as a dip method, a puddle method, or a spray method for ˜3 minutes, more preferably 0.5 to 2 minutes. An appropriate amount of alcohol and / or surfactant may be added to the alkaline developer. The pH of the alkali developer is usually from 10.0 to 15.0. In particular, an aqueous solution of 2.38% by mass of tetramethylammonium hydroxide is desirable.

As the organic developer, polar solvents such as ketone solvents, ester solvents, alcohol solvents, amide solvents, ether solvents, and hydrocarbon solvents can be used.

In the present invention, the ester solvent is a solvent having an ester group in the molecule, the ketone solvent is a solvent having a ketone group in the molecule, and the alcohol solvent is alcoholic in the molecule. It is a solvent having a hydroxyl group, an amide solvent is a solvent having an amide group in the molecule, and an ether solvent is a solvent having an ether bond in the molecule. Among these, there is a solvent having a plurality of types of the above functional groups in one molecule. In that case, it corresponds to any solvent type including the functional group of the solvent. For example, diethylene glycol monomethyl ether corresponds to both alcohol solvents and ether solvents in the above classification. Further, the hydrocarbon solvent is a hydrocarbon solvent having no substituent.
In particular, a developer containing at least one kind of solvent selected from ketone solvents, ester solvents, alcohol solvents and ether solvents is preferable.

Examples of these solvents include the solvents described in paragraphs [0025] to [0048] of JP2013-80004A.

In the case of using EUV light (Extreme Ultra Violet) and EB (Electron Beam) in the exposure process, the developer has 7 or more carbon atoms (7 to 14 is preferable, preferably 7 to 14 from the viewpoint that the swelling of the resist film can be suppressed. To 12 are more preferable, and 7 to 10 are more preferable), and it is preferable to use an ester solvent having 2 or less heteroatoms.
The hetero atom of the ester solvent is an atom other than a carbon atom and a hydrogen atom, and examples thereof include an oxygen atom, a nitrogen atom, and a sulfur atom. The number of heteroatoms is preferably 2 or less.
Preferred examples of ester solvents having 7 or more carbon atoms and 2 or less heteroatoms include amyl acetate, isoamyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, pentyl propionate, hexyl propionate, Examples include heptyl propionate, butyl butanoate, butyl propionate and isobutyl isobutyrate, and it is particularly preferable to use isoamyl acetate.

In the case of using EUV light (Extreme Ultra Violet) and EB (Electron Beam) in the exposure process, the developer is replaced with the above ester solvent having 7 or more carbon atoms and 2 or less hetero atoms. You may use the mixed solvent of a system solvent and the said hydrocarbon solvent, or the mixed solvent of the said ketone solvent and the said hydrocarbon solvent. Even in this case, it is effective in suppressing the swelling of the resist film.
When an ester solvent and a hydrocarbon solvent are used in combination, isoamyl acetate is preferably used as the ester solvent. As the hydrocarbon solvent, a saturated hydrocarbon solvent (for example, octane, nonane, decane, dodecane, undecane, hexadecane, etc.) is preferably used from the viewpoint of adjusting the solubility of the resist film.
When a ketone solvent and a hydrocarbon solvent are used in combination, 2-heptanone is preferably used as the ketone solvent. As the hydrocarbon solvent, a saturated hydrocarbon solvent (for example, octane, nonane, decane, dodecane, undecane, hexadecane, etc.) is preferably used from the viewpoint of adjusting the solubility of the resist film.
In the case of using the above mixed solvent, the content of the hydrocarbon solvent is not particularly limited because it depends on the solvent solubility of the resist film, and the necessary amount may be determined by appropriately adjusting.

The organic developer may contain a basic compound. Specific examples and preferred examples of the basic compound that can be contained in the developer used in the present invention are the same as those in the basic compound that can be contained in the actinic ray-sensitive or radiation-sensitive resin composition described above.

The water content of the organic developer as a whole is preferably less than 10% by mass, and more preferably substantially free of moisture.
That is, the amount of the organic solvent used in the organic developer is preferably 90% by mass or more and 100% by mass or less, and more preferably 95% by mass or more and 100% by mass or less, with respect to the total amount of the developer.

An appropriate amount of alcohol and / or surfactant can be added to the developer as necessary.

The surfactant is not particularly limited, and for example, ionic or nonionic fluorine-based and / or silicon-based surfactants can be used. As these fluorine-based and / or silicon-based surfactants, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950 are disclosed. JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988, US Pat. No. 5,405,720, Mention may be made of the surfactants described in US Pat. Nos. 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143, 5,294,511, and 5,824,451. Preferably, it is a nonionic surfactant. Although it does not specifically limit as a nonionic surfactant, It is still more preferable to use a fluorochemical surfactant or a silicon-type surfactant.
The amount of the surfactant used is usually from 0.001 to 5% by mass, preferably from 0.005 to 2% by mass, more preferably from 0.01 to 0.5% by mass, based on the total amount of the developer.

As a developing method, for example, a method in which a substrate is immersed in a tank filled with a developer for a certain period of time (dip method), a method in which the developer is raised on the surface of the substrate by surface tension and is left stationary for a certain time (paddle) Method), a method of spraying the developer on the substrate surface (spray method), a method of continuously discharging the developer while scanning the developer discharge nozzle on the substrate rotating at a constant speed (dynamic dispensing method) Etc. can be applied.

When the various development methods described above include a step of discharging the developer from the developing nozzle of the developing device toward the resist film, the discharge pressure of the discharged developer (the flow rate per unit area of the discharged developer) is Preferably it is 2 mL / sec / mm ² or less, More preferably, it is 1.5 mL / sec / mm ² or less, More preferably, it is 1 mL / sec / mm ² or less. There is no particular lower limit on the flow rate, but 0.2 mL / sec / mm ² or more is preferable in consideration of throughput.

By setting the discharge pressure of the discharged developer within the above range, it is possible to remarkably reduce pattern defects caused by resist residues after development.

The details of this mechanism are not clear, but perhaps by setting the discharge pressure within the above range, the pressure applied to the resist film by the developer may be reduced, and the resist film / pattern may be cut or collapsed carelessly. This is considered to be suppressed.
The developer discharge pressure (mL / sec / mm ² ) is a value at the developing nozzle outlet in the developing device.

Examples of the method for adjusting the discharge pressure of the developer include a method of adjusting the discharge pressure with a pump and the like, and a method of changing the pressure by adjusting the supply condition from the pressurized tank.

In addition, after the step of developing using a developer, a step of stopping development may be performed while substituting with another solvent.

As the rinsing liquid in the rinsing treatment performed after alkali development, pure water can be used and an appropriate amount of a surfactant can be added.

When the developer is an organic developer, the rinse solution contains at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, amide solvents, and hydrocarbon solvents. It is preferable to use a rinse solution.

The vapor pressure of the rinsing liquid (the vapor pressure as a whole in the case of a mixed solvent) is preferably 0.05 kPa or more and 5 kPa or less, more preferably 0.1 kPa or more and 5 kPa or less, and 0.12 kPa or more at 20 ° C. Most preferably, it is 3 kPa or less. By setting the vapor pressure of the rinse liquid to 0.05 kPa or more and 5 kPa or less, the temperature uniformity in the wafer surface is improved, and further, the swelling due to the penetration of the rinse solution is suppressed, and the dimensional uniformity in the wafer surface. Improves.

Examples of the rinsing liquid include solvents described in [0049] to [0058] of JP2013-80004A.

As the organic solvent contained in the rinsing liquid, when using EUV light (Extreme Ultra Violet) or EB (Electron Beam) in the exposure process, it is preferable to use a hydrocarbon solvent among the above organic solvents, and aliphatic carbonization. It is more preferable to use a hydrogen-based solvent. As the aliphatic hydrocarbon solvent used in the rinsing liquid, an aliphatic hydrocarbon solvent having 5 or more carbon atoms (for example, pentane, hexane, octane, decane, undecane, dodecane, Hexadecane, etc.) are preferred, aliphatic hydrocarbon solvents having 8 or more carbon atoms are preferred, and aliphatic hydrocarbon solvents having 10 or more carbon atoms are more preferred.

In addition, although the upper limit of the carbon atom number of the said aliphatic hydrocarbon solvent is not specifically limited, For example, 16 or less is mentioned, 14 or less is preferable and 12 or less is more preferable.
Among the aliphatic hydrocarbon solvents, decane, undecane, and dodecane are particularly preferable, and undecane is most preferable.
By using a hydrocarbon solvent (especially an aliphatic hydrocarbon solvent) as the organic solvent contained in the rinsing liquid, the developer slightly soaked into the resist film after development is washed away, and swelling is further suppressed. Thus, the effect of suppressing pattern collapse is further exhibited.

A plurality of organic solvents may be mixed, or may be used by mixing with an organic solvent other than the above. The solvent may be mixed with water, but the water content in the rinsing liquid is usually 60% by mass or less, preferably 30% by mass or less, more preferably 10% by mass or less, and most preferably 5% by mass or less. is there. A favorable rinse characteristic can be acquired by making a moisture content into 60 mass% or less.

It is preferable that the rinse liquid contains a surfactant. Thereby, the wettability with respect to the resist film is improved, and the cleaning effect tends to be further improved.
As the surfactant, those similar to the surfactant used in the actinic ray-sensitive or radiation-sensitive resin composition can be used.
The content of the surfactant is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and more preferably 0.01 to 0.5% by mass with respect to the total mass of the rinse liquid. .

In the negative pattern forming method using the composition of the present invention, the resist film in the unexposed part is dissolved, and the exposed part is hardly dissolved in the developer because the polymer compound is crosslinked, and the object is formed on the substrate. Pattern is formed.

In the pattern forming method of the present invention, a top coat may be formed on the upper layer of the resist film. It is preferable that the top coat is not mixed with the resist film and can be uniformly applied to the upper layer of the resist film.
The topcoat is not particularly limited, and a conventionally known topcoat can be formed by a conventionally known method. For example, based on the description in paragraphs <0072> to <0082> of JP-A-2014-059543 Can be formed.
When using a developer containing an organic solvent in the development step, for example, it is preferable to form a topcoat containing a basic compound on the resist film as described in JP2013-61648A, for example. .

The pattern forming method of the present invention can also be used for guide pattern formation in DSA (Directed Self-Assembly) (see, for example, ACS Nano Vol. 4 No. 8 Pages 4815-4823).
Further, the resist pattern formed by the above method can be used as a core material (core) of a spacer process disclosed in, for example, JP-A-3-270227 and JP-A-2013-164509.

The present invention also relates to a photomask obtained by exposing and developing the resist-coated mask blank. The steps described above are applied as exposure and development. The photomask is suitably used for semiconductor manufacturing.

The photomask in the present invention may be a light transmission type mask used in ArF excimer laser or the like, or a light reflection type mask used in reflection lithography using EUV light as a light source.

The present invention also relates to an electronic device manufacturing method including the pattern forming method described above, and an electronic device manufactured by the manufacturing method.
The electronic device of the present invention is suitably mounted on electrical and electronic equipment (home appliances, OA / media related equipment, optical equipment, communication equipment, etc.).

Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the following examples.

<Synthesis of Compound (PAG-1)>
To a methanol solution of 10.0 g of the following sulfonium bromide (X1), 7.91 g of the following sulfonic acid (Y1) was added and stirred at room temperature for 30 minutes. Thereafter, pure water and ethyl acetate were added to the reaction mixture to separate the layers. The separated organic phase was washed with pure water, and then the solvent was distilled off under reduced pressure, followed by vacuum drying. In this way, compound (PAG-1) (12.3 g) was obtained. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.88-7.62 (14H, m), 6.88 (2H, s), 4.74 (1H, t), 4.19 (2H, m), 3.66 (2H, t), 2.85 (2H, t), 2.39 (1H, m), 1.84 to 1.22 (30H, m)

<Synthesis of Compound (PAG-2)>
11.1 g of compound (PAG-2) was obtained in the same manner as in the above <Synthesis of compound (PAG-1)> except that 10.0 g of sulfonium bromide (X1) was changed to 9.64 g of sulfonium bromide (X2). It was. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.89-7.66 (14H, m), 6.89 (2H, s), 5.52 (1H, t), 4.59 (2H, d), 4.19 (2H, m), 2.39 (1H, m), 1.17-1.09 (18H, m)

<Synthesis of Compound (PAG-3)>
In the above <Synthesis of Compound (PAG-1)>, 10.0 g of sulfonium bromide (X1) is changed to 9.64 g of sulfonium bromide (X2) and 7.91 g of sulfonic acid (Y1) is changed to 11.76 g of sulfonic acid (Y2). Except that, 13.1 g of compound (PAG-3) was obtained in the same manner. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.89-7.66 (14H, m), 5.52 (1H, t), 4.59 (2H, d), 3.82 (1H, d), 3.65 (1H, d), 3.18-3.07 (1H, m), 2.81-2.73 (1H, m), 1.74-1.51 (5H, m) 1.26-1.12 (5H, m), 1.10-0.88 (2H, m)

<Synthesis of Compound (PAG-4)>
13.1 g of compound (PAG-4) was obtained in the same manner as in the above <Synthesis of compound (PAG-1)> except that 7.91 g of sulfonic acid (Y1) was changed to 11.76 g of sulfonic acid (Y3). It was. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.88-7.62 (14H, m), 4.74 (1H, t), 3.81 (2H, s), 3.66 (2H, t), 2.85 (2H, t), 1.95-1.91 (3H, m), 1.70-1.57 (6H, m), 1.53-1.50 (6H, m)

<Synthesis of Compound (PAG-5)>
In the above <Synthesis of Compound (PAG-1)>, 10.0 g of sulfonium bromide (X1) is changed to 9.64 g of sulfonium bromide (X2) and 7.91 g of sulfonic acid (Y1) is changed to 8.94 g of sulfonic acid (Y4). 10.1 g of compound (PAG-5) was obtained in the same manner as described above. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.89-7.66 (14H, m), 6.89 (2H, s), 5.52 (1H, t), 4.59 (2H, d), 4.54 (d, 1H, J = 15.6 Hz), 4.50 (d, 1H, J = 15.6 Hz), 2.00-1.95 (3H, m), 1.85 1.83 (6H, m), 1.72-1.63 (6H, m)

<Synthesis of Compound (PAG-6)>
In the above <Synthesis of Compound (PAG-1)>, 10.0 g of sulfonium bromide (X1) is changed to 9.64 g of sulfonium bromide (X2), and 7.91 g of sulfonic acid (Y1) is changed to 11.0 g of sulfonic acid (Y5). Except for the above, 14.2 g of compound (PAG-6) was obtained. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.89-7.66 (14H, m), 6.89 (2H, s), 5.52 (1H, t), 4.59 (2H, d), 4.19 (2H, m), 2.39 (1H, m), 1.84-1.22 (30H, m)

<Synthesis of Compound (PAG-7)>
14.4 g of compound (PAG-7) was obtained in the same manner as in <Synthesis of compound (PAG-1)> except that 7.91 g of sulfonic acid (Y1) was changed to 11.0 g of sulfonic acid (Y5). It was. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.88-7.62 (14H, m), 6.88 (2H, s), 4.74 (1H, t), 4.19 (2H, m), 3.66 (2H, t), 2.85 (2H, t), 2.39 (1H, m), 1.84 to 1.22 (30H, m)

<Synthesis of Compound (PAG-8)>
In the above <Synthesis of Compound (PAG-1)>, 10.0 g of sulfonium bromide (X1) is changed to 10.41 g of sulfonium bromide (X3) and 7.91 g of sulfonic acid (Y1) is changed to 11.76 g of sulfonic acid (Y2). Except that, 14.4 g of Compound (PAG-8) was obtained. ¹ H-NMR (400 MHz, d6-DMSO) δ = 7.81-7.56 (13H, m), 4.59 (4H, d), 3.82 (1H, d), 3.65 (1H, d), 3.18-3.07 (1H, m), 2.81-2.73 (1H, m), 1.74-1.51 (5H, m), 1.26-1.12 ( 5H, m), 1.10-0.88 (2H, m)

The following compounds (PAG-9) to (PAG-15) were synthesized according to the same method as described above.

Hereinafter, the chemical structures of the compounds (PAG-1) to (PAG-15), (PR-1) and (PR-2) as photoacid generators used in Examples or Comparative Examples are shown.

〔resin〕
Hereinafter, the structure of the resin used in the examples, the synthesized polymer structure, the weight average molecular weight (Mw), and the degree of dispersion (Mw / Mn) will be described. Moreover, the composition ratio of each repeating unit of the following polymer structure was shown by molar ratio.

[Crosslinking agent]
The following compounds were used as the crosslinking agent.

[Basic compounds]
The following compounds were used as basic compounds.
TBAH: Tetrabutylammonium hydroxide TOA: Tri (n-octyl) amine TPI: 2,4,5-triphenylimidazole

[Surfactant]
The following compounds were used as the surfactant.
W-1: Megafuck R08 (DIC Corporation; fluorine and silicon)
W-2: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd .; silicon-based)
W-3: PF6320 (manufactured by OMNOVA; fluorine-based)

〔solvent〕
The following compounds were used as the solvent.
S1: Propylene glycol monomethyl ether acetate (PGMEA)
S2: Propylene glycol monomethyl ether (PGME)
S3: Cyclohexanone S4: γ-Butyrolactone S5: Ethyl lactate

[Developer / Rinse solution]
The following compounds were used as the developer and rinse solution.
G-1: Butyl acetate G-2: 2-Heptanone G-3: Anisole G-4: Isoamyl acetate G-5: 1-Hexanol G-6: Undecane

(Solvent solubility evaluation of photoacid generator)
1 g of each of the compounds (PAG-1) to (PAG-15) and (PR-1) to (PR-2) was added to 10 g of PGEMA / PGME (mass ratio 80/20), and the mixture was stirred and dissolved. Observed and evaluated as follows.
A: Completely dissolved within 10 minutes.
B: Although it did not melt | dissolve in 10 minutes, it melt | dissolved completely within 1 hour.
C: Not dissolved within 1 hour.

As is apparent from Table 1, compounds (PAG-1) to (PAG-) corresponding to the compounds represented by formula (I) used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention are used. 15) showed excellent results in solvent solubility as compared with compounds (PR-1) and (PR-2) which are not equivalent thereto.
Further, in the general formula (I), a compound (PAG-2) corresponding to a compound in which at least one of R ₂ , R ₄ , R ₇ , R ₉ , R ₁₂ and R ₁₄ is a substituent containing an alcoholic hydroxyl group. ), (PAG-3), (PAG-5), (PAG-6), (PAG-8) to (PAG-12), (PAG-15) showed more excellent solvent solubility. .

[Examples 1 to 21, Comparative Examples 1 to 4 (electron beam exposure (alkali development negative))]
(1) Preparation and application of coating solution of actinic ray-sensitive or radiation-sensitive resin composition A coating solution composition having the composition shown in Table 2 below is microfiltered with a membrane filter having a pore size of 0.1 μm and activated. A light-sensitive or radiation-sensitive resin composition (resist composition) solution (solid content concentration: 1.5% by mass) was obtained.
The solvent solubility in the actinic ray-sensitive or radiation-sensitive resin composition was evaluated by the following method.

(Solvent solubility evaluation of actinic ray-sensitive or radiation-sensitive resin composition)
Each component of the actinic ray-sensitive or radiation-sensitive resin composition solution was mixed and then stirred, and whether each component was dissolved was visually observed and evaluated as follows.
A: Completely dissolved within 10 minutes.
B: Although it did not melt | dissolve in 10 minutes, it melt | dissolved completely within 1 hour.
C: Although it did not melt | dissolve in 1 hour, it melt | dissolved completely within 3 hours.

This actinic ray-sensitive or radiation-sensitive resin composition solution is applied to a 6-inch wafer on which Cr oxide is deposited using a spin coater Mark8 manufactured by Tokyo Electron (which has been subjected to a shielding film treatment used for ordinary photomask blanks). It was applied and dried on a hot plate at 110 ° C. for 90 seconds to obtain a resist film having a thickness of 100 nm.

(2) Electron beam exposure and development The wafer on which the resist film obtained in (1) above was formed was subjected to pattern irradiation using an electron beam drawing apparatus (HL750 manufactured by Hitachi, Ltd., acceleration voltage 50 KeV). At this time, drawing was performed so that a 1: 1 line and space was formed. After electron beam drawing, it was heated at 120 ° C. for 90 seconds on a hot plate. Then, it was immersed for 60 seconds using 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution, and then rinsed with water for 30 seconds and dried. In this way, a resist pattern was obtained.

(3) Evaluation of resist pattern The obtained resist pattern was evaluated with respect to sensitivity, resolution, line edge roughness (LER), pattern shape and scum by the following methods. The results are shown in the table below.

(3-1) Sensitivity Irradiation energy (exposure amount) when resolving a 1: 1 line and space pattern with a line width of 100 nm was defined as sensitivity. The smaller this value, the better the performance. The resist pattern was observed using a scanning electron microscope (S-9220, manufactured by Hitachi, Ltd.).

(3-2) Resolution The minimum line width of the separated 1: 1 line-and-space pattern in the irradiation amount (exposure amount) indicating the sensitivity was defined as the resolution. The smaller this value, the better the performance. The resist pattern was observed using a scanning electron microscope (S-9220, manufactured by Hitachi, Ltd.).

(3-3) Line edge roughness (LER)
Scanning electron microscope (S-9220, manufactured by Hitachi, Ltd.) with respect to arbitrary 30 points in the length direction of 50 μm of a 1: 1 line and space pattern having a line width of 100 nm at the irradiation amount (exposure amount) showing the above sensitivity. Was used to measure the distance from the reference line where the edge should be, and the standard deviation of this distance was determined to calculate 3σ. A smaller value indicates better performance.

(3-4) Pattern Shape A cross-sectional shape of a 1: 1 line and space pattern with a line width of 100 nm at the irradiation amount (exposure amount) showing the above sensitivity is measured with a scanning electron microscope (S-9220, manufactured by Hitachi, Ltd.). And observed. In the cross-sectional shape of the line pattern, the ratio represented by [line width at the bottom part (bottom part) of the line pattern / line width at the middle part of the line pattern (half height position of the line pattern)] is 1.05. Evaluation was made with the above as “taper” and the ratio of less than 1.05 as “rectangular”.

(3-5) Scum A 1: 1 line and space pattern having a line width of 100 nm was formed at the irradiation amount (exposure amount) showing the above sensitivity. Thereafter, a cross-sectional SEM was obtained by S4800 (manufactured by Hitachi High-Tech Co., Ltd.), and the scum (residue) in the space portion was observed and evaluated as follows.
A: Scum is not seen.
B: Scum is observed in less than 20% of the space portion.
C: Scum is observed in 20% or more of the space portion.

Evaluation results are shown in Table 2 below.

As shown in Table 2 above, although Comparative Examples 1 to 3 not using the compound (A) and the compound (A) were used, the content was less than 5% by mass relative to the total solid content of the composition. According to Examples 1 to 18 in which the compound (A) was used and the content thereof was 5% by mass or more based on the total solid content of the composition, compared with Comparative Example 4 which was made, the high sensitivity It was found that high resolution, excellent roughness performance, excellent pattern shape, and excellent scum performance can all be achieved at a high level.
For example, from a comparison between Example 2 and Example 4, in the compound (A), at least one of R ₂ , R ₄ , R ₇ , R ₉ , R ₁₂ and R ₁₄ contains a substituent containing an alcoholic hydroxyl group. Therefore, it was found that the solvent solubility, sensitivity, and scum performance of the actinic ray-sensitive or radiation-sensitive resin composition were further improved.
Further, for example, a comparison between Example 3 and Example 18 revealed that the resolution and roughness performance were further improved when the substituent containing the alcoholic hydroxyl group was a hydroxymethyl group (—CH ₂ OH). .
Further, for example, comparison of Examples 5 to 7 shows that the resolution and roughness performance are further improved as the concentration of the compound (A) increases.

[Examples 22 to 42, Comparative Examples 5 to 8 (electron beam exposure (organic solvent developing negative))]
(1) Preparation and application of coating solution of actinic ray-sensitive or radiation-sensitive resin composition The coating solution composition having the composition shown in Table 3 below is microfiltered with a membrane filter having a pore size of 0.1 μm and activated. A light-sensitive or radiation-sensitive resin composition (resist composition) solution (solid content concentration: 1.5% by mass) was obtained.
The solvent solubility in the actinic ray-sensitive or radiation-sensitive resin composition was evaluated by the same method as described above.

This actinic ray-sensitive or radiation-sensitive resin composition solution is uniformly applied on a silicon substrate subjected to hexamethyldisilazane treatment using a spin coater, and heated and dried on a hot plate at 120 ° C. for 90 seconds. A resist film having a thickness of 100 nm was formed.

(2) Electron beam exposure The wafer on which the resist film obtained in the above (1) was formed was subjected to pattern irradiation using an electron beam irradiation apparatus (HL750 manufactured by Hitachi, Ltd., acceleration voltage 50 keV). At this time, drawing was performed so that a 1: 1 line and space was formed. After electron beam drawing, it was heated at 110 ° C. for 90 seconds on a hot plate. Then, it developed for 60 seconds at 23 degreeC using the developing solution of the following Table 3. Subsequently, after rinsing with a rinsing solution described in Table 3 below for 30 seconds (when there is no description, rinsing is not performed), spin drying was performed. In this way, a resist pattern was obtained.

(3) Evaluation of resist pattern The obtained resist pattern was evaluated for sensitivity, resolving power, line edge roughness (LER), pattern shape and scum in the same manner as described above. The results are shown in the table below.

As shown in Table 3 above, although Comparative Examples 5 to 7 not using the compound (A) and the compound (A) were used, the content was less than 5% by mass relative to the total solid content of the composition. According to Examples 22 to 42 in which the compound (A) was used and the content thereof was 5% by mass or more with respect to the total solid content of the composition, compared with Comparative Example 8 performed, the high sensitivity It was found that high resolution, excellent roughness performance, excellent pattern shape, and excellent scum performance can all be achieved at a high level.
For example, from a comparison between Example 23 and Example 25, in compound (A), at least one of R ₂ , R ₄ , R ₇ , R ₉ , R ₁₂ and R ₁₄ contains a substituent containing an alcoholic hydroxyl group. Therefore, it was found that the solvent solubility, sensitivity, and scum performance of the actinic ray-sensitive or radiation-sensitive resin composition were further improved.
Further, for example, comparison between Example 24 and Example 39 shows that the resolution and roughness performance are further improved when the substituent containing the alcoholic hydroxyl group is a hydroxymethyl group (—CH ₂ OH). .
Further, for example, from comparisons of Examples 26 to 28, it was found that the resolution and roughness performance were further improved as the concentration of the compound (A) increased.

[Examples 43 to 53, Comparative Examples 9 to 12 (EUV (extreme ultraviolet) exposure (organic solvent developing negative))]
(1) Preparation and application of coating solution of actinic ray-sensitive or radiation-sensitive resin composition The coating solution composition having the composition shown in Table 4 below is subjected to microfiltration with a membrane filter having a pore size of 0.1 μm and activated. A light-sensitive or radiation-sensitive resin composition (resist composition) solution (solid content concentration: 1.5% by mass) was obtained.
The solvent solubility in the actinic ray-sensitive or radiation-sensitive resin composition was evaluated by the same method as described above.

This actinic ray-sensitive or radiation-sensitive resin composition solution is uniformly applied on a silicon substrate subjected to hexamethyldisilazane treatment using a spin coater, and heated and dried on a hot plate at 120 ° C. for 90 seconds. A resist film having a thickness of 100 nm was formed.

(2) EUV exposure The wafer on which the resist film obtained in the above (1) is formed is passed through an EUV exposure apparatus (Micro Exposure, manufactured by Exitech) via a reflective mask having a 1: 1 line and space pattern with a line width of 100 nm. Pattern irradiation was performed with Tool, NA 0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36). Immediately after irradiation, it was heated on a hot plate at 110 ° C. for 90 seconds. Furthermore, it developed for 60 seconds at 23 degreeC using the developing solution of the following Table 4. Subsequently, after rinsing with a rinsing solution described in Table 4 below for 30 seconds (when there is no description, rinsing is not performed), spin drying was performed. In this way, a resist pattern was obtained.

(3) Evaluation of resist pattern The obtained resist pattern was evaluated for sensitivity, resolving power, line edge roughness (LER), pattern shape and scum in the same manner as described above. The results are shown in the table below.

As shown in Table 4 above, although Comparative Examples 9 to 11 not using the compound (A) and the compound (A) were used, the content was less than 5% by mass with respect to the total solid content of the composition. According to Examples 43 to 53, the compound (A) was used and the content thereof was 5% by mass or more based on the total solid content of the composition as compared with Comparative Example 12, which was highly sensitive. It was found that high resolution, excellent roughness performance, excellent pattern shape, and excellent scum performance can all be achieved at a high level.
Further, for example, from comparison between Examples 45 and 46, it was found that the resolution and roughness performance were further improved as the concentration of the compound (A) increased.

Claims (15)

1. (A) a compound represented by the following general formula (I),
   (B) an alkali-soluble resin, and (C) a crosslinking agent,
   An actinic ray-sensitive or radiation-sensitive resin composition containing
   The actinic ray-sensitive or radiation-sensitive resin composition, wherein the content of the compound (A) is 5% by mass or more based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.
   

   

   
   R ₁ to R ₁₅ each independently represents a hydrogen atom or a substituent, and at least one of R ₁ to R ₁₅ represents a substituent containing an alcoholic hydroxyl group;
   Two or more of R ₁ to R ₅ , two or more of R ₆ to R ₁₀ , and two or more of R ₁₁ to R ₁₅ may be bonded to each other to form a ring,
   X ⁻ represents an anion selected from the group consisting of a sulfonate anion, a carboxylate anion, a bis (alkylsulfonyl) amide anion, a tris (alkylsulfonyl) methide anion, and a hexafluorophosphate anion.
2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein X ^- is an anion having a cyclic organic group.
3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein at least one of R ₁ to R ₁₅ is an alkyl group substituted with an alcoholic hydroxyl group.
4. The actinic ray-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 3, wherein at least one of R ₁ to R ₁₅ is a hydroxymethyl group.
5. The actinic ray-sensitive or actinic ray-sensitive material according to any one of claims 1 to 4, wherein at least one of R ₂ , R ₄ , R ₇ , R ₉ , R ₁₂ and R ₁₄ is a substituent containing an alcoholic hydroxyl group. Radiation sensitive resin composition.
6. 6. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the alkali-soluble resin (B) is a resin having a repeating unit represented by the following general formula (II). object.
   

   

   
   
   Where
   R ₂ represents a hydrogen atom, an optionally substituted methyl group, or a halogen atom,
   B ′ represents a single bond or a divalent linking group,
   Ar ′ represents an aromatic ring group,
   m represents an integer of 1 or more.
7. The actinic ray-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 6, wherein the crosslinking agent (C) is a compound having two or more hydroxymethyl groups or alkoxymethyl groups in the molecule. object.
8. A resist film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 7.
9. (I) forming a resist film according to claim 8;
   (Ii) a step of exposing the resist film; and (iii) a step of developing the exposed resist film using a developer to form a pattern;
   A pattern forming method.
10. The pattern forming method according to claim 9, wherein the developer is a developer containing an organic solvent.
11. The pattern forming method according to claim 9 or 10, wherein the exposure is performed using an X-ray, an electron beam, or EUV light.
12. A resist-coated mask blank comprising the resist film according to claim 8.
13. A photomask obtained by exposing and developing the resist-coated mask blank according to claim 12.
14. An electronic device manufacturing method comprising the pattern forming method according to any one of claims 9 to 11.
15. An electronic device manufactured by the method for manufacturing an electronic device according to claim 14.