WO2016021833A1

WO2016021833A1 - Semiconductor light-emitting element

Info

Publication number: WO2016021833A1
Application number: PCT/KR2015/006638
Authority: WO
Inventors: 진근모; 전수근; 김태현; 이성찬
Original assignee: 주식회사 세미콘라이트
Priority date: 2014-08-07
Filing date: 2015-06-29
Publication date: 2016-02-11

Abstract

The present disclosure pertains to a semiconductor light-emitting element comprising: a plurality of semiconductor layers having two long edges that face each other and two short edges that face each other; at least one of a first branch electrode extending over a first semiconductor layer, which is exposed by removal of a second semiconductor layer and an active layer, from a long edge on one side towards a long edge on the other side and a second branch electrode extending over the second semiconductor layer from the long edge on the other side towards the long edge on one side; a non-conductive reflective film, which is formed to cover the plurality of semiconductor layers and the first and second branch electrodes, and which reflects light from the active layer; a first electrode provided on the long edge on one side so as to electrically connect with the first semiconductor layer; and a second electrode provided on the long edge on the other side so as to electrically connect with the second semiconductor layer.

Description

Semiconductor light emitting device

The present disclosure relates to a semiconductor light emitting device as a whole, and more particularly to a semiconductor light emitting device having improved light extraction efficiency.

The present invention also relates to a semiconductor light emitting device in which a plurality of light emitting parts are arranged compactly while suppressing a reduction in light emitting area.

The present invention also relates to a semiconductor light emitting device having a reduced light emitting area.

In addition, the present invention relates to a semiconductor light emitting device which reduces light absorption loss due to metal in a small sized device and ensures uniformity of light emission.

Moreover, it is related with the semiconductor light emitting element which prevented the damage by the thermal expansion difference.

The present invention also relates to a semiconductor light emitting device having an electrode structure for reducing light loss.

Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.

This section provides background information related to the present disclosure which is not necessarily prior art.

1 is a view showing an example of a conventional group III nitride semiconductor light emitting device. The group III nitride semiconductor light emitting device includes a substrate 10 (eg, a sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type group III nitride semiconductor layer 30 grown on the buffer layer 20, and an n-type 3 A transparent conductive film formed on the active layer 40 grown on the group nitride semiconductor layer 30, the p-type group III nitride semiconductor layer 50 grown on the active layer 40, and the p-type group III nitride semiconductor layer 50 ( 60, the n-type III-nitride semiconductor layer 30 in which the p-side bonding pad 70, the p-type III-nitride semiconductor layer 50 and the active layer 40 formed on the light-transmissive conductive film 60 are mesa-etched and exposed. ) And an n-side bonding pad 80 and a passivation layer 90 formed on the substrate.

The buffer layer 20 is to overcome the difference in lattice constant and thermal expansion coefficient between the substrate 10 and the n-type group III nitride semiconductor layer 30. US Pat. No. 5,122,845 discloses a sapphire substrate at 380 캜 to 800 캜. A technique for growing an AlN buffer layer having a thickness of 100 kPa to 500 kPa at a temperature is described. US Pat. A technique for growing a 1-x) N (0 ≦ x <1) buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C. to 990 ° C. Techniques for growing an In (x) Ga (1-x) N (0 <x≤1) layer thereon have been described. Preferably, the undoped GaN layer is grown prior to the growth of the n-type Group III nitride semiconductor layer 30, which may be viewed as part of the buffer layer 20 or as part of the n-type Group III nitride semiconductor layer 30. .

The transparent conductive film 60 is provided in order to supply current well to the entire p-type group III nitride semiconductor layer 50. The transparent conductive film 60 is formed over almost the entire surface of the p-type group III nitride semiconductor layer 50, and is formed of a transparent conductive film using, for example, ITO, ZnO or Ni and Au, or by using Ag. It may be formed of a reflective conductive film.

The p-side bonding pad 70 and the n-side bonding pad 80 are metal electrodes for supplying current and wire bonding to the outside, for example, nickel, gold, silver, chromium, titanium, platinum, palladium, and rhodium. And iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, or any combination thereof.

The passivation layer 90 is formed of a material such as silicon dioxide and may be omitted.

2 is a view showing an example of a series-connected LED (A, B) disclosed in US Patent No. 6,547,249. Due to various advantages, as shown in FIG. 2, a plurality of LEDs A and B are used in series. For example, connecting a plurality of LEDs A and B in series reduces the number of external circuits and wire connections, and reduces the light absorption loss due to the wires. In addition, since the operating voltage of the series-connected LEDs A and B all rises, the power supply circuit can be further simplified.

Meanwhile, in order to connect the plurality of LEDs (A, B) in series, the interconnector 34 is deposited to connect the p-side electrode 32 and the n-side electrode 32 of the neighboring LEDs (A, B). However, a plurality of semiconductor layers must be etched to expose the sapphire substrate 20 in an isolation process for electrically insulating the plurality of LEDs (A, B), because the etch depth is long and takes a long time and the step is large. It is difficult to form the interconnector 34. When the interconnector 34 is formed to have a gentle inclination as shown in FIG. 2 by using the insulator 30, the spacing between the LEDs A and B increases, which causes a problem in improving the degree of integration.

3 is a view showing another example of a series-connected LED disclosed in US Patent No. 6,547,249. Another method of isolating the plurality of LEDs (A, B) is ion implantation without etching the lower semiconductor layer 22 (for example, n-type nitride semiconductor layer) between the plurality of LEDs (A, B). Insulation between the plurality of LEDs A and B by ion implantation reduces the level of the interconnector 34. However, it is difficult to implant ions deeply into the lower semiconductor layer 22 and a long process time is a problem.

FIG. 4 is a diagram illustrating an example of an LED array disclosed in US Patent No. 7,417,259, in which a two-dimensional LED array is formed on an insulating substrate for driving a high drive voltage and a low current. As the insulating substrate, a sapphire monolithically substrate was used, and two LED arrays were connected in parallel in a reverse direction on the substrate. Therefore, AC power can be used as the direct drive power.

FIG. 5 is a view illustrating an example of a semiconductor light emitting device including a plurality of light emitting units connected in series on a conventional single substrate. As illustrated in FIG. 5, a plurality of light emitting units A, A semiconductor light emitting element in which B) is connected in series is used. When the plurality of light emitting units A and B are connected in series on a single substrate, the number of wires for connection with an external circuit is reduced, and thus the light absorption loss due to the wires is reduced. In addition, since the operating voltage of the entire series of light emitting units A and B increases, the power supply circuit may be simplified. In addition, compared with connecting individual semiconductor light emitting devices in series, the area occupied is small, so that the installation density can be improved, and therefore, miniaturization is possible when constructing a lighting device or the like including the semiconductor light emitting devices.

This will be described later in the section on Embodiments of the Invention.

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having a plurality of active layers generating light through recombination of electrons and holes; A peripheral light emitting part provided around the central light emitting part, the peripheral light emitting part having a shape different from that of the central light emitting part when viewed in a top view, and a side facing the central light emitting part is formed along the outline of the central light emitting part; Ambient light emitting unit; And a center connection electrode electrically connecting the center light emitting unit and the peripheral light emitting unit.

According to another aspect of the present disclosure (According to another aspect of the present disclosure), a semiconductor light emitting device including a first light emitting unit and a second light emitting unit formed on a single substrate, the first light emitting unit and the second light emitting unit Each part is interposed between a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a first semiconductor layer and a second semiconductor layer, and emitting light through recombination of electrons and holes. A first electrode including a plurality of semiconductor layers having an active layer to be generated, and electrically communicating with the first semiconductor layer of the first light emitting unit and supplying one of electrons and holes; A second electrode in electrical communication with a second semiconductor layer of the second light emitting part and supplying the other one of electrons and holes; And an extending type electrode part extending over the second semiconductor layer of the first light emitting part and extending to the side of the first light emitting part, between the first light emitting part and the second light emitting part, and to the side of the second light emitting part; And a connection electrode having a point type electrode portion formed on an edge of the first semiconductor layer of the second light emitting portion and connected to the extended electrode portion.

According to another aspect according to the present disclosure (According to still another aspect of the present disclosure), in the semiconductor light emitting device, the first semiconductor layer having a first conductivity, generating light through recombination of electrons and holes A plurality of semiconductor layers in which an active layer and a second semiconductor layer having a second conductivity different from the first conductivity are sequentially stacked; two long edges facing each other and two short edges facing each other ( a plurality of semiconductor layers having short edges); A first branch electrode extending from one side long edge to the other long edge on the exposed first semiconductor layer with the second semiconductor layer and the active layer removed, and from the other long edge to the one long edge on the second semiconductor layer At least one of the extended second branch electrodes; A non-conductive reflecting film formed to cover the plurality of semiconductor layers, the first branch electrode and the second branch electrode, and reflecting light from the active layer; A first electrode provided on one side of the long edge side to be in electrical communication with the first semiconductor layer and supplying one of electrons and holes; And a second electrode provided at the other long edge side to be in electrical communication with the second semiconductor layer and supplying the other one of electrons and holes.

According to still another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity and a second conductivity having a second conductivity different from the first conductivity. A plurality of semiconductor layers having a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; A first electrode part in electrical communication with the first semiconductor layer and supplying one of electrons and holes; A second electrode part in electrical communication with the second semiconductor layer and supplying the other one of electrons and holes; And a nonconductive reflecting film formed over the plurality of semiconductor layers and reflecting light from the active layer, wherein at least one of the first electrode part and the second electrode part comprises: a first upper electrode formed on the nonconductive reflecting film; A first branch electrode extending below the first upper electrode and out of the first upper electrode; A first electrical connection penetrating the non-conductive reflective film and connecting the first upper electrode and the first branch electrode; And a second electrical connection penetrating the non-conductive reflecting film and electrically communicating the first upper electrode and the plurality of semiconductor layers, but deviating from an extension line of the first branch electrode.

According to still another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity and a second conductivity having a second conductivity different from the first conductivity. A plurality of semiconductor layers comprising a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; A plurality of semiconductor layers having another short side, a long edge, and the other long side opposite to the long side; A nonconductive reflecting film formed over the plurality of semiconductor layers and reflecting light from the active layer; A first upper electrode and a second upper electrode formed on the non-conductive reflective film, the first upper electrode provided on the short side and the second upper electrode provided on the other short side; A first electrical connection and a second electrical connection respectively passing through the non-conductive reflecting film to electrically connect the first semiconductor layer and the first upper electrode; wherein the first electrical connection is located farther from the long side than the first electrical connection; Electrical connection and second electrical connection; A third electrical connection and a fourth electrical connection respectively passing through the non-conductive reflecting film to electrically connect the second semiconductor layer and the second upper electrode; wherein the fourth electrical connection is located farther from the other side than the third electrical connection. 3 electrical connections and fourth electrical connections; A first branch electrode connected to the first electrical connection and extending from the bottom of the first upper electrode to the bottom of the first upper electrode on which the second semiconductor layer and the active layer are etched and exposed; And a second branch electrode connected to the third electrical connection and extending from the bottom of the second upper electrode to the bottom of the first upper electrode between the second long side semiconductor layer and the light reflection layer. There is provided a semiconductor light emitting element, wherein there is no branch electrode formed between the fourth electrical connection in the direction from the short side to the other short side and in the direction from the other short side to the short side.

According to another aspect of the present disclosure (According to still another aspect of the present disclosure), in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, an agent having a second conductivity different from the first conductivity A plurality of semiconductor layers interposed between the second semiconductor layer, the first semiconductor layer, and the second semiconductor layer, the active layers generating light through recombination of electrons and holes, and grown using a growth substrate; A nonconductive reflecting film bonded to the plurality of semiconductor layers on the opposite side of the growth substrate; And a first electrode and a second electrode electrically connected to the plurality of semiconductor layers and formed to face each other on the non-conductive reflective film, wherein at least one connection portion connecting the plurality of sub electrodes and the plurality of sub electrodes to each other. The semiconductor light emitting device includes a first electrode and a second electrode having a width smaller than that of each sub-electrode connected by each connection part based on a direction perpendicular to the connection direction.

According to still another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity and a second conductivity having a second conductivity different from the first conductivity. A plurality of semiconductor layers having a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of electrons and holes; A nonconductive reflecting film formed over the plurality of semiconductor layers to reflect light from the active layer; A first electrode formed on the non-conductive reflecting film and having a pad portion and a protrusion projecting from the pad portion; A second electrode formed on the non-conductive reflecting film and facing the protrusion; A first branch electrode formed on the first semiconductor layer and extending between the first electrode and the second electrode under the protrusion; A first electrical connector penetrating the non-conductive reflective film to connect the protrusion and the first branch electrode; And a second electrical connection part penetrating the non-conductive reflective film to electrically connect the second electrode and the second semiconductor layer.

According to still another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity and a second conductivity having a second conductivity different from the first conductivity. A plurality of semiconductor layers having a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of electrons and holes; A nonconductive reflecting film formed over the plurality of semiconductor layers to reflect light from the active layer; A first electrode and a second electrode formed to be separated from the non-conductive reflecting film; At least one first electrical connection penetrating the non-conductive reflective film to electrically connect the first electrode and the first semiconductor layer; At least one second electrical connection penetrating the non-conductive reflective film to electrically connect the second electrode and the second semiconductor layer; A first branch electrode formed on the first semiconductor layer to be connected to the at least one first electrical connection portion, the first branch electrode extending between the first electrode and the second electrode from below a corner adjacent to the second electrode of the diagonal corners of the first electrode; 1 electrode; And a second branch electrode formed between the plurality of semiconductor layers and the non-conductive reflecting film so as to be connected to the at least one second electrical connection part, wherein the second branch electrode is formed from below a corner adjacent to the first electrode of the diagonal corners of the second electrode. There is provided a semiconductor light emitting device, including a second branch electrode extending toward between diagonal corners.

This will be described later in the section on Embodiments of the Invention.

1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,

2 illustrates an example of a series-connected LED disclosed in US Pat. No. 6,547,249;

3 illustrates another example of a series-connected LED disclosed in US Pat. No. 6,547,249;

4 is a view showing an example of the LED array disclosed in US Patent No. 7,417,259;

5 is a view showing an example of a semiconductor light emitting device including a plurality of light emitting units connected in series on a conventional single substrate;

6 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure;

7 is a view showing an example of a cut plane taken along the line A-A of FIG. 6,

8 is a view illustrating an improvement in light extraction efficiency of a semiconductor light emitting device according to the present disclosure;

9 is a view showing a semiconductor light emitting device of Comparative Example 1;

10 is a view showing a semiconductor light emitting device of Comparative Example 2;

11 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

12 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

13 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

14 is a view for explaining various examples in which the connecting electrode includes two stranded wires;

15 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

16 illustrates another example of the semiconductor light emitting device according to the present disclosure;

17 illustrates another example of a semiconductor light emitting device according to the present disclosure;

18 illustrates another example of the semiconductor light emitting device according to the present disclosure.

19 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

20 is a view showing still another example of a cut plane taken along the line A-A of FIG. 19,

21 is a view showing a semiconductor light emitting device of Comparative Example;

22 illustrates another example of the semiconductor light emitting device according to the present disclosure;

23 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

24 is a view showing still another example of the semiconductor light emitting device according to the present disclosure;

25 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

26 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure;

27 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

28 is a view for explaining another example of a cut plane taken along the line B-B in FIG. 27;

29 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

30 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436;

31 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913;

32 is a view showing an example of a semiconductor light emitting device shown in US Patent No. 6,650,044;

33 is a view showing an example of a semiconductor light emitting device disclosed in US Patent Publication No. 2012/0171789;

34 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

35 is a view showing an example of a section taken along the line A-A of FIG. 34,

36 is a view for explaining the semiconductor light emitting device of the comparative example;

37 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

38 is a view showing an example of a cross section taken along the line B-B in FIG. 37,

39 and 40 are diagrams for describing usage examples of the semiconductor light emitting device according to the present disclosure;

41 is a view for explaining an example of a method of manufacturing a plate;

42 is a view for explaining another example of the method of using the semiconductor light emitting device according to the present disclosure;

43 is a view for explaining another example of a method of using the semiconductor light emitting device according to the present disclosure;

44 is a view showing an example of an electrode structure disclosed in US Patent No. 6,307,218.

45 is a view showing an example of an electrode structure disclosed in US Patent Publication No. 2007-0096115,

46 is a view showing still another example of a semiconductor light emitting device according to the present disclosure;

FIG. 47 is a view for explaining an example of a cross section taken along a line A-A in FIG. 46;

48 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure;

49 is a view for explaining other examples of the semiconductor light emitting device according to the present disclosure;

50 is a view for explaining still another example of a semiconductor light emitting device according to the present disclosure;

51 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

52 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

53 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure;

54 is a light emitting photograph of the semiconductor light emitting device shown in FIG. 53;

55 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure;

56 is a light emitting photograph of the semiconductor light emitting device shown in FIG. 55;

57 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

58 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

59 is a view showing an example of a cross section taken along the line A-A of FIG. 58,

60 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

61 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

62 is a view showing an example of a section taken along the line B-B in FIG. 61,

63 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

64 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

65 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

66 and 67 are views for explaining use examples of the semiconductor light emitting device according to the present disclosure;

68 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

FIG. 69 is a view for explaining an example of a cross section taken along a line A-A of FIG. 68;

70A is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

71 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure;

72 is a view for explaining still another example of a semiconductor light emitting device according to the present disclosure;

73 is a diagram for explaining the relationship between the area of an electrode and the luminance of a semiconductor light emitting element;

74 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

75 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

76 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

77 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

FIG. 78 is a view for explaining an example of a cross section taken along a line A-A in FIG. 77;

79 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

80 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

81 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

6 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, and FIG. 7 is a diagram illustrating an example of a cut plane taken along line A-A of FIG. 6.

The semiconductor light emitting device includes a center light emitting unit 101, a peripheral light emitting unit 201,

center connecting electrodes

92 and 93, a peripheral connecting electrode 94, a first electrode 80, and a second electrode 70. . The central light emitting unit 101 and the peripheral light emitting unit 201 are formed on the same substrate 10 and each includes a plurality of semiconductor layers formed on the substrate 10.

Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10. The present example may be applied to a semiconductor light emitting device in which an electrode is formed on the first semiconductor layer 30 side or the conductive substrate 10 side from which the substrate 10 is removed when the substrate 10 is removed or has conductivity. It can also be applied to flip chips. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.

The plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure). Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.

Preferably, the transparent conductive film 60 is provided. The transparent conductive film 60 may be formed to have a light transmissive shape and substantially cover the second semiconductor layer 50, but may be formed only in part. In particular, in the case of p-type GaN, the current spreading ability is inferior, and in the case where the p-type semiconductor layer 50 is made of GaN, most of the transparent conductive film 60 should be assisted. For example, materials such as ITO and Ni / Au may be used as the transparent conductive film 60.

A passivation layer (not shown) may be formed to cover the plurality of

light emitting parts

101, 102, 201 and the

connection electrodes

92, 93, and 94.

The plurality of

light emitting parts

101, 102, and 201 are electrically isolated from each other by a method of etching a semiconductor layer, such as a trench. An insulating film may be provided between the plurality of

light emitting parts

101, 102, and 201 as an electrical separation method, or a method such as ion implantation may be used in the substrate 10, or a semiconductor layer may be formed and insulated.

The peripheral light emitting unit 201 is provided around the central light emitting unit 101, and has a shape different from that of the central light emitting unit 101 when viewed in a top view, and faces the central light emitting unit 101. The side surface 215 (hereinafter, the first side surface) is formed along the outline of the central light emitting portion 101. The

center connection electrodes

92 and 93 electrically connect the center light emitting unit 101 and the peripheral light emitting unit 201.

In this example, a plurality of peripheral light emitting parts 201 are included, and each of the peripheral light emitting parts 201 has a side surface 214 connected to the first side surface 215 and facing the other peripheral light emitting parts 201. . The side surface of the central light emitting unit 101 is formed so as not to be parallel to the other side surface 214 of the peripheral light emitting unit 201 other than the first side surface 215 of the peripheral light emitting unit. In the plan view, the central light emitting part 101 is circular, and the first side surface 215 of the peripheral light emitting part 201 is concave. The first side 215 is formed so as not to be parallel with the other side which is approximately 90 degrees connected to each other. According to the present example, the plurality of

light emitting parts

101, 102, and 201 are compactly disposed, and the trapping of light due to total internal reflection is reduced due to the first side surface 215 of the peripheral light emitting part 201, resulting in improved luminance. This is further described below.

In this example, the semiconductor light emitting device includes a first center light emitting unit 101, a second center light emitting unit 102, a plurality of peripheral light emitting units 201, a plurality of

center connecting electrodes

92 and 93, and a plurality of peripheral connections. Electrode 94 is included. Two central

light emitting units

101 and 102 are disposed, and four peripheral light emitting units 201 are disposed around the central

light emitting units

101 and 102, respectively. The peripheral light emitting part 201 has a shape of a portion of a substantially quadrangular shape except for the side of the first side surface 215. The central light emitting part 101 is formed at a position where a plurality of peripheral light emitting parts 201 are in contact, a tangent or a boundary where the peripheral light emitting parts 201 meet. Thus, the peripheral light emitting part 201 does not become a quadrangle, and thus the first side surface 215 is formed. It is formed concave along the outline of the central light emitting part 101.

The central light emitting unit 101 and the peripheral light emitting unit 201 are electrically connected (eg, in series or parallel) by the

connection electrodes

92, 93, and 94. The

connection electrodes

92, 93, and 94 are peripheral connection electrodes 94 that connect the peripheral light emitters 201 to each other, and

center connection electrodes

92, 93 that connect the peripheral light emitter 201 and the central light emitter 101. There is). In this example, the central light emitting portion 101 and the peripheral light emitting portion 201 are electrically connected in series. One end of the peripheral connection electrode 94 is formed on the transparent conductive film 60 of one peripheral light emitting part 201, and the other end of the peripheral connection electrode 94 is formed of the adjacent peripheral light emitting part 201. 2, the semiconductor layer 50 and the active layer 40 are etched and placed in the exposed first semiconductor layer (n-contact region). One end of the center connection electrode 92 is formed on the n-contact region of one peripheral light emitting part 201, and the other end is formed on the translucent conductive film of the center light emitting part 101. One end of the other center connection electrode 93 is formed on the n-contact area of the central light emitting part 101, and the other end is formed on the translucent conductive film 60 of the other peripheral light emitting part 201. The insulating layer 95 may be formed between the light emitting

units

101, 102, and 201 so that the remaining portions except the ends of the

connection electrodes

92, 93, and 94 are insulated from the semiconductor layers 30, 40, and 50.

In this example, the plurality of peripheral light emitters 201 are disposed symmetrically with respect to each center light emitter 101. The

center connection electrodes

92 and 93 may be formed in a diagonal direction from one peripheral light emitting part 201 toward the peripheral light emitting part 201 on the opposite side. For example, the first center light emitting unit 101 and the peripheral light emitting unit 201 around the first center light emitting unit 101 are electrically connected in series, and the second center light emitting unit 102 and the second center light emitting unit are connected. Peripheral light emitting portions 201 around the periphery are electrically connected in series, and one peripheral light emitting portion 201 around the first central light emitting portion 101 and one peripheral portion around the second central light emitting portion 102. The light emitting unit 201 is electrically connected. The order of the serial connections can be varied.

The first electrode 80 is formed in the n-contact region of the peripheral light emitting unit 201 positioned at one end of the series connection to supply electrons. The second electrode 70 is formed on the transmissive conductive film 30 of the peripheral light emitting unit 201 positioned at the other end of the series connection to supply holes.

FIG. 8 is a view illustrating an improvement in light extraction efficiency of a semiconductor light emitting device according to the present disclosure. When the other side surfaces 214 connected to the first side surface 215 of the peripheral light emitting unit 201 are extended on a plan view, a substantially square shape is illustrated. Has One corner of the square shape is concave due to the central light emitting portion 101 to have a shape as shown in FIG. 6. If the peripheral light emitting part 201 has a rectangular shape as an extension line indicated by a dotted line, the light L11 and L12 incident on the extension line at an angle greater than or equal to the critical angle are reflected in the peripheral light emitting part 201 and are trapped or moved outward. The number of reflections increases until extraction, thereby increasing the light loss. In this example, the first side surface 215 is formed concave along the contour of the central light emitting portion 101 so as not to be parallel to the other side surface. Accordingly, the light having a critical angle with respect to the extension line has no incident angle with respect to the first side surface 215. Therefore, when the light is incident on the first side surface 215 before entering the extension line, the light may be better extracted (L21, L22). Therefore, the light extraction efficiency is improved, and as a result, the brightness is improved.

9 is a view showing the semiconductor light emitting device of Comparative Example 1, wherein there is no central light emitting portion, and a plurality of light emitting portions 205 having the same shape are all connected in series. Each light emitting portion 205 is substantially rectangular, so that the sides are parallel or perpendicular to each other. Thus, some of the light that is totally reflected and trapped on one side has a high probability or distribution of total reflection again on the other side. On the other hand, in the semiconductor light emitting device according to the present example, the central light emitting part 101 and the peripheral light emitting part 201 have different shapes, and the first side surface 215 of the central light emitting part 101 is the peripheral light emitting part 201. Not parallel to the other side of 214. Therefore, the light incident on the reflection or total reflection first side 215 at one side of the peripheral light emitting unit 201 is better extracted outside than the comparison 1. As a result, the brightness is improved.

10 is a view showing the semiconductor light emitting device of Comparative Example 2, in which two triangular light emitting parts are divided in a rectangular device. As a result, the corners of the triangular light emitting portion except for the right angle corners have a small angle and have a sharp shape. The semiconductor light emitting device of this example has advantages over the semiconductor light emission of Comparative Example 2. For example, the sharp shape of Comparative Example 2 reduces the margin to the tolerance of the mask pattern in the manufacturing process, resulting in poor yield. On the other hand, in the semiconductor light emitting device of this example, the inner angle of the corners of the light emitting portion is larger than that of Comparative Example 2, and the corners are rounded, so that defects in the manufacturing process are small.

On the other hand, it is preferable that the planar area of the peripheral light emitting unit 201 and the central light emitting unit 101 is formed to be substantially similar for uniformity of power consumed in each light emitting unit and uniformity of light emission. In the present example, the central light emitting part 101 is circular, and the peripheral light emitting part 201 has a substantially rectangular shape when viewed as an extension line except for the first side surface 215. The diameter of the central light emitting part 101, the length of the sides of the peripheral light emitting part 201, and the distance between the center of the central light emitting part 101 and the center of the peripheral light emitting part 201 are variables as variables. The area of the light emitting portion 201 can be formed approximately equal. For example, if the equation is made by the area of the central light emitting unit 101 = the area of the peripheral light emitting unit 201 and two of the variables are determined, the other one may be determined.

The semiconductor light emitting device of this example suppresses an unnecessary increase in the size of the device by compactly disposing the central light emitting part 101 and the peripheral light emitting part 201 having different shapes, and connects a plurality of light emitting parts in series to high voltage. Provided is a semiconductor light emitting device operating in). Although 10 light emitting units are used in this example, it is of course also possible to connect a plurality of sets in series by using the 10 as one set. At this time, the serial connection allows for arranging the set in the horizontal and vertical directions. It is of course also possible to parallel-connect sets in series. The semiconductor light emitting device of this example has a structure that is very suitable for compactly arranging odd number of light emitting parts (for example, the first central light emitting part 101 and four peripheral light emitting parts 201).

FIG. 11 is a diagram illustrating another example of a semiconductor light emitting device according to the present disclosure, in which a central light emitting unit 101 has a square shape, and an edge of the central light emitting unit 101 is positioned on a line in contact with peripheral light emitting units 201. do. The edge of the central light emitting part 101 is separated from the center line connecting the center of the central light emitting part 101 and the peripheral light emitting part 201. The peripheral light emitting part 201 is symmetrically formed around the central light emitting part 101. The first side surface 215 (the side of the peripheral light emitting unit 201 facing the central light emitting unit 101) is formed not to be parallel to the other side in the peripheral light emitting unit 201. Therefore, the same effects as those described in FIGS. 6 to 11 are obtained.

12 is a view illustrating another example of the semiconductor light emitting device according to the present disclosure, in which the central light emitting unit 101 has a square shape, and corners of the central light emitting unit 101 are the central light emitting unit 101 and the peripheral light emitting unit. It is outside the center line connecting the center of 201, and is also separated from the line which the adjacent center light-emitting part 101 contact | connects. When formed in this way, the peripheral light emitting unit 201 has a polygonal shape different from that of the embodiment of FIG. 11 in plan view, and has an effect of varying the types of the side surfaces. Due to this, as described above, the light extraction efficiency is further improved.

FIG. 13 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, wherein the central light emitting unit 101 has a semicircular shape, and the peripheral light emitting unit 201 has an arc-shaped side surface of the central light emitting unit 101. An opposite concave side 215. In addition to the first side surface of the peripheral light emitting portion 201, the central light emitting portion 101 has an arc-shaped side surface and a straight side surface, there is an effect that the kind of the side direction varies. Due to this, as described above, the light extraction efficiency is further improved.

In addition, the

center connection electrodes

92 and 93 are formed to have two

connection lines

92a, 92b, 93a, and 93b, respectively, so that one connection line (eg, 92a, 93a) remains the same even if a problem such as disconnection occurs. Due to one connection line (eg, 92b and 93b), the series connection is maintained as it is, so that the yield of the semiconductor light emitting device is improved, which is advantageous for high current driving. As such, forming the connection electrode with two or more connection lines may be applied to all the embodiments of the present disclosure described with reference to FIGS. 6 to 15. 14 illustrates various examples in which the connecting electrode has two stranded

wires

92a and 92b. 14A and 14B have an advantage that the light emitting unit is connected even when one of the connection lines is disconnected. In the case of FIGS. 14B and 14D, the length of the electrode is reduced to reduce the light absorption. 14 and 14D, the area of mesa etching is reduced.

FIG. 15 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, wherein the central light emitting unit 101 has an elongated rectangular shape, and the peripheral light emitting unit 201 has a corner side and a long side of the central light emitting unit 101. It is arrange | positioned at the side, respectively. The variation in the direction of the side of the peripheral light emitting portion 201 is smaller than the above-described embodiment, but it is advantageous to form the central light emitting portion 101 to make an elongated chip, and to emit a plurality of light in a small area in a compact arrangement. It is suitable for forming a part.

16 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure, an example applied to a flip chip is presented. The reflective film R is formed to cover the connecting electrode 92 and the transparent conductive film 60. The reflecting film reflects light from the active layer to the substrate side. The connection electrode 92 electrically connects the central light emitting part 101 and the first semiconductor layer 30 and the second semiconductor layer 50 of the peripheral light emitting part 201 which face each other. One end of the connection electrode 92 is in electrical communication with the first semiconductor layer 30 exposed by etching the second semiconductor layer 50 and the active layer 40, and the other end of the connection electrode 92 is It is provided between the second semiconductor layer 50 and the reflective layer (R). An insulator 97 is formed between the central light emitting unit and the peripheral light emitting unit, and the connection electrode 92 is formed on the insulator. The first electrode 80 is in electrical communication with the first semiconductor layer 30 through the first electrical connection 81 on the reflective layer R of the peripheral light emitting part, and the second electrode 70 is a reflective layer of the other peripheral light emitting part ( R) is in electrical communication with the second semiconductor layer 50 via the second electrical connection 71. The

ohmic electrodes

72 and 82 may be interposed between the

electrical connections

71 and 81 and the plurality of semiconductor layers to reduce contact resistance and improve stability of the electrical connection. An auxiliary pad 93 is formed on the reflective layer R of the central light emitting unit 101 for heat radiation or support.

17 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, an example applied to a flip chip is presented. The connection electrode 92 is formed on the reflective layer R covering the transparent conductive film 60. The connection electrode 92 is electrically connected to the first semiconductor layer of the peripheral light emitting part by the first electrical connection 81 passing through the reflective layer R, and to the second electrical connection 71 passing through the reflective layer R. The second semiconductor layer is electrically connected to the central light emitting unit.

18 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and an example applied to a flip chip is shown. In order to improve the stability of the electrical connection between the

ohmic electrodes

72 and 82 and the

electrical connections

71 and 81, the openings formed in the reflective layer R are exposed to the periphery of the

ohmic electrodes

72 and 82, and the electrical connection 71 is provided. , 81 may be formed to surround the

ohmic electrodes

72 and 82. The reflective layer can have a single layer or a multilayer structure.

The reflective layer can have a single layer or a multilayer structure. In this example, the reflective layer R is formed of a non-conductive material to reduce light absorption by the metal reflective film, and may include one of a distributed bragg reflector and an omni-directional reflector (ODR). An example of the multilayer structure includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c. The dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light. SiO ₂ is a suitable material for the dielectric film 91b. The distributed Bragg reflector 91a is formed on the dielectric film 91b. The distribution Bragg reflector 91a may be composed of repeated stacking of materials having different reflectances, for example, SiO ₂ / TiO ₂ , SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO. SiO ₂ / TiO ₂ has good reflection efficiency, and for UV light, SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO will have good reflection efficiency. The clad film 91c may be made of a metal oxide such as Al ₂ O ₃ , a dielectric film 91b such as SiO ₂ , SiON, MgF, CaF, or the like.

19 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, and FIG. 20 is a diagram illustrating an example of a cut plane taken along line A-A of FIG. 19.

The semiconductor light emitting device includes a first light emitting unit 101, a second light emitting unit 201, a first electrode 80, a second electrode 70, and a connection electrode 90. The first light emitting unit 101 and the second light emitting unit 201 are formed on the same or single substrate 10, and each includes a plurality of semiconductor layers formed on the substrate 10. The connection electrode 90 includes an extending type electrode portion 91 and a point type electrode portion 93.

Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10. This example may also be applied to a semiconductor light emitting device in which an electrode is formed on the first semiconductor layer 30 side or the conductive substrate 10 side from which the substrate 10 is removed when the substrate 10 is removed or has conductivity. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.

The first electrode 80 is formed in the first semiconductor layer (n-contact region) where the second semiconductor layer 50 and the active layer 40 of the first light emitting unit 101 are etched and exposed to supply electrons. The second electrode 70 is formed on the transparent conductive film 30 of the second light emitting part 201 to supply holes. The connection electrode 90 electrically connects the first light emitting part 101 and the second light emitting part 201. The connecting electrode 90 is further described below. A passivation layer (not shown) may be formed to cover the first light emitting unit 101, the second light emitting unit 201, and the connection electrode 90.

The first light emitting part 101 and the second light emitting part 201 are electrically isolated from each other by a method of etching a semiconductor layer, such as a trench 105. An insulating film may be provided between the first light emitting part 101 and the second light emitting part 201 as an electrical separation method, or a method such as ion implantation may be used in the substrate 10, or a semiconductor layer may be formed and insulated. It may be.

When viewed in a top view, the first light emitting part 101 and the second light emitting part 201 are provided to face each other, and the first light emitting part 101 and the second light emitting part 201 are separated by the separation. Opposite

edges

107 and 207 are formed obliquely with respect to the other edges of the first light emitting portion 101 and the second light emitting portion 201. If the

edges

107 and 207 of the first light emitting part 101 and the second light emitting part 201 which face each other are not formed diagonally, the first light emitting part 101 and the second light emitting part 201 are rectangular in shape. In the comparative example (see FIG. 21), the light incident at critical angles on the

edges

107 and 207 facing each other is reflected and increases the number of reflections until it is trapped or extracted to the outside, thereby increasing the light loss. In this example, as described above, the

edges

107 and 207 that face each other of the first light emitting part 101 and the second light emitting part 201 are different edges of the first light emitting part 101 and the second light emitting part 201. It is formed obliquely with respect to the oblique line. Therefore, the light incident at the critical angle in the comparative example is such that the incident angle is not the critical angle with respect to the diagonally formed

edges

107 and 207. Thus, the light can be better extracted to the outside. Therefore, the light extraction efficiency is improved, and as a result, the brightness is improved.

The connection electrode 90 electrically connects the first light emitting unit 101 and the second light emitting unit 201 in series. The connection electrode 90 includes an extended electrode portion 91 and a point electrode portion 93. The extended electrode part 91 extends over the transmissive conductive film 60 of the first light emitting part 101, and has a side surface of the first light emitting part 101, the first light emitting part 101 and the second light emitting part 201. And extend to the side of the second light emitting part 201. On the side of the first light emitting part 101, between the first light emitting part 101 and the second light emitting part 201 and on the side of the second light emitting part 201, the extended electrode part 91 and the plurality of semiconductor layers are provided. The insulating film 95 may be formed to insulate the 30, 40, and 50. The extended electrode portion 91 includes a connecting line 92 and a branch 98. The connection line 92 is formed on the side of the first light emitting part 101, between the first light emitting part 101 and the second light emitting part 201, and on the side of the second light emitting part 201, and the branch 98. Is branched from the connecting line 92 on the transparent conductive film 60 of the first light emitting part 101. The embodiment in which the connection line 92 extends on the transparent conductive film 60 without branching like the branch 98 is also possible. The branches 98 extend along the edges on the transmissive conductive film 60 and extend around the first electrode 80 formed adjacent to the edges opposite the

diagonal edges

107, 207.

The viscous electrode portion 93 is formed on the edge of the first semiconductor layer where the n-contact region of the second light emitting portion 201 is formed and is connected to the connection line 92 of the extended electrode portion 91. The point electrode portion 93 may have one of circular and polygonal shapes, and in this example, the point electrode portion 93 is circular and preferably has a width greater than or equal to that of the extended electrode portion 91. . In this example, the point electrode 93 has a larger width than the extended electrode 91. The pointed electrode portion 93 and the extended electrode portion 91 may be formed together as one body in the same process. In this case, the connection line 92 of the extended electrode portion 91 is connected to the side surface of the point electrode portion 93. Alternatively, the point electrode portion 93 may be formed first, and the end of the connecting line 92 of the extended electrode portion 91 may be formed over the point electrode portion 93. On the contrary, an end portion of the connection line 92 of the extended electrode portion 91 is first formed in the n-contact region of the second light emitting portion 201, and the point electrode portion 93 covers the end portion of the connection line 92. The embodiment to be formed is also possible.

FIG. 21 is a view showing a semiconductor light emitting device according to a comparative example, in which

connection electrodes

98 and 92 extend across both the first light emitting portion 101 and the second light emitting portion 201. In particular, when the connecting electrodes 92 extend in the second light emitting part 201 and the plurality of

light emitting parts

101 and 201 are provided in a limited area, the structure of the connecting

electrode

98 and 92 is compact. There is a disadvantage in that the structure is restricted and the light emitting area is reduced. Even when the connecting electrode extends along the edge of the second light emitting part 201 in a band shape, the mesa etching area is also increased to reduce the light emitting area.

In the present example, the connection electrode 90 is simply formed of the point electrode portion 93 with little or no elongated portion on the second light emitting portion 201. The pointed electrode portion 93 extends along the diagonal edge 207 of the second light emitting portion 201 in a band shape or does not extend long inside the second light emitting portion 201. Therefore, it is not necessary to form the n-contact region long by mesa etching, thereby preventing the emission area from being reduced. In addition, there is an advantage in that the first light emitting portion 101 and the second light emitting portion 201 can be formed more compactly in the arrangement direction. In the second light emitting unit 201, the point electrode portion 93 is formed on the n side where current spreads better than the p side in terms of current spreading, and the second electrode 70 has a pad portion for bonding with the outside. It is preferable to include the branch portion 78 extending from the pad portion to the periphery of the point electrode portion 93 to improve the uniformity of current spreading. In the first light emitting part 101, the extended electrode part 91 may have the branches 98 as described above, and thus, the current-transmitting conductive film 60 may be sufficiently spread. As described above, the semiconductor light emitting device of the present example is suitable for the compact structure in which a plurality of light emitting parts are provided in a limited area, has a structure for sufficiently spreading current, and has a structure in which the light emitting area is reduced.

22 is a view showing another example of the semiconductor light emitting device according to the present disclosure, in which the shape of the point connection electrode 90 is formed in a quadrangular shape. The viscous electrode portion 93 is formed in the n-contact region of the second light emitting portion 201, and the n-contact region of the second light emitting portion 201 is opened toward the diagonal edge 207. Thus, the pointed electrode portion 93 is located adjacent to the diagonal edge 207 to suppress an unnecessary increase in the n-contact area. The point electrode 93 may be changed into various shapes such as a triangle in addition to a quadrangle.

FIG. 23 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure. It is also possible that the point electrode 93 is formed to be substantially similar to the width of the connection line 92 to form a smaller n-contact region.

24 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, wherein the semiconductor light emitting device includes a plurality of first light emitting parts 101 and a plurality of second light emitting parts 201, and the first light emitting part. The 101 and the second light emitting units 201 are alternately arranged and connected in series. The first electrode 80 is formed at the first light emitting part 101 at one end of the series connection, and the second electrode 70 is formed at the second light emitting part 201 at the other end of the series connection. The connecting

electrodes

91 and 93 are connected to the n-contact region of the second light emitting part 201 on the transmissive conductive film 60 of the first light emitting part 101, and the additional connecting electrodes 91-2 and 93-are provided. 2) is connected to the n-contact region of the first light emitting portion 101 on the transparent conductive film 60 of the second light emitting portion 201. When the plurality of light emitting parts are arrayed in this way, the connecting electrode consisting of the branch 98, the connecting line 92 and the point electrode portion 93, and the additional connecting electrodes 91-2 and 93-2 are current spreading. While sufficiently achieving this, it is possible to suppress the emission area reduction and to have a structure suitable for compact arrangement.

FIG. 25 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which a plurality of rows in which the first

light emitting units

101 and 102 and the second

light emitting units

201 and 202 are alternately arranged on the same or single substrate 10 is provided. It is formed. It is also possible to connect a plurality of serial arrays in parallel with each other. In addition, the

separation lines

107 and 207 of each of the first light emitting units 101 and the second light emitting units 201 that face each other have different sides of the first light emitting units 101 and the second light emitting units 201. It is formed by diagonal lines. Therefore, as described above, the light extraction efficiency is improved, and the light emitting area can be reduced and compactly arranged while achieving sufficient current spreading of the plurality of light emitting units. Such a light emitting device can be driven at high voltage, including a plurality of light emitting units, and has the advantage of simplifying a complicated electric device or a circuit configuration for reducing a commercial AC voltage.

26 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and the connection electrode 90 includes an extended electrode portion 91 and a point electrode portion 93. The extended electrode portion 91 includes a connecting line 92 and a branch 98. In this example, the connection line 92 is formed on the side of the first light emitting part 101, between the first light emitting part 101 and the second light emitting part 201, and on the side of the second light emitting part 201. It can be formed larger than (98) to improve the reliability of the electrical connection. In this example, the width of the point electrode portion 93 is formed to be substantially the same as the connecting line 92.

27 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 28 is a view for explaining an example of a cut plane taken along line BB of FIG. 27, and an example applied to a flip chip is shown. . Each light emitting part has a shape having a long side and a short side, the short side is formed in a V shape, and the V type short sides face each other. The reflective film R is formed to cover the connection electrode 90 and the transparent conductive film 60. The reflecting film reflects light from the active layer to the substrate side. The connection electrode 90 electrically connects the first light emitting part 101 and the first semiconductor layer 30 and the second semiconductor layer 50 of the second light emitting part 201 facing the V-shaped edge. The point electrode part 93 is formed adjacent to the edge of the first semiconductor layer 30 which is exposed by etching the first light emitting part, the extended electrode part is connected to the point electrode part, and the branch 98 of the extended electrode part is It extends on the translucent conductive film 60 of a 2nd light emitting part. An insulator 97 is formed between the first light emitting part and the second light emitting part, and a connection line 92 of the extended electrode part is formed on the insulator 97. The connecting electrode is formed at one side edge of the semiconductor light emitting device. The first electrode 80 is electrically connected to the first semiconductor layer 30 through the first electrical connection 81 on the reflective layer R of the first light emitting part, and the second electrode 70 is a reflective layer of the second light emitting part. (R) is in electrical communication with the second semiconductor layer 50 via the second electrical connection 71. In order to improve the stability of the electrical connection, the

ohmic electrodes

72 and 82 may be interposed between the

electrical connections

71 and 81 and the plurality of semiconductor layers.

29 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, an example applied to a flip chip is presented. Each light emitting part has a shape having a long side and a short side, the short side is formed in a V shape, and the V type short sides face each other. The connecting electrode is formed in approximately the center of the V-shaped short side, the point electrode portion 93 is formed adjacent to the V-shaped short side, the connecting line 92 extends above the light emitting portion, and the branch 98 branches at the end of the connecting line. .

30 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436, wherein the semiconductor light emitting device is a substrate 100, an n-type semiconductor layer 300 is grown on the substrate 100, Active layers 400 grown on the n-type semiconductor layer 300, p-type semiconductor layers 500 grown on the active layer 400,

electrodes

901, 902, 903 functioning as reflective films formed on the p-type semiconductor layer 500, and etching And an n-side bonding pad 800 formed on the exposed n-type semiconductor layer 300.

A chip having such a structure, that is, a chip in which both the

electrodes

901, 902, 903 and the electrode 800 are formed on one side of the substrate 100, and the

electrodes

901, 902, 903 function as a reflective film is called a flip chip. . The

electrodes

901, 902 and 903 may include a high reflectance electrode 901 (eg Ag), an electrode 903 (eg Au) for bonding, and an electrode 902 which prevents diffusion between the electrode 901 material and the electrode 903 material; Example: Ni). This metal reflective film structure has a high reflectance and has an advantage in current spreading, but has a disadvantage of light absorption by metal. In addition, although the metal reflecting film is an electrode and can be a heat dissipation passage, there are many limitations in that the metal reflecting film is an electrode and has a good heat dissipation structure.

FIG. 31 is a diagram illustrating an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913. The semiconductor light emitting device includes a substrate 100, a buffer layer 200, and a buffer layer 200 grown on the substrate 100. It is formed on the n-type semiconductor layer 300, the active layer 400 is grown on the n-type semiconductor layer 300, the p-type semiconductor layer 500, the p-type semiconductor layer 500 is grown on the active layer 400 And a transmissive conductive film 600 having a current spreading function, a p-side bonding pad 700 formed on the transmissive conductive film 600, and an n-side bonding pad formed on the etched and exposed n-type semiconductor layer 300 ( 800). The distributed Bragg reflector 900 (DBR: Distributed Bragg Reflector) and the metal reflecting film 904 are provided on the transparent conductive film 600. According to this configuration, the light absorption by the metal reflective film 904 is reduced, but there is a disadvantage in that current spreading is not smoother than using the

electrodes

901, 902, 903.

32 is a view showing an example of the semiconductor light emitting device shown in US Patent No. 6,650,044, the semiconductor light emitting device in the form of a flip chip, having a first conductivity on the substrate 100, the substrate 100 The first semiconductor layer 300, an active layer 400 that generates light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited thereon. A reflective film 950 for reflecting light toward the substrate 100 is formed, and an electrode 800 serving as a bonding pad is formed on the first semiconductor layer 300 that is etched and exposed, and the substrate 100 and The encapsulant 1000 is formed to surround the semiconductor layers 300, 400, and 500. The reflective film 950 may be formed of a metal layer as shown in FIG. 31, but may be formed of an insulator reflective film such as a distributed bragg reflector (DBR) made of SiO ₂ / TiO ₂ , as shown in FIG. 34. The semiconductor light emitting device is mounted on a printed circuit board (PCB) 1200 having

electrical wires

820 and 960 through

conductive adhesives

830 and 970. The encapsulant 1000 mainly contains phosphors. Since the semiconductor light emitting device includes the encapsulation material 1000, the semiconductor light emitting device portion except for the encapsulation material 1000 may be referred to as a semiconductor light emitting chip for the purpose of classification. In this manner, the encapsulant 1000 may be applied to the semiconductor light emitting chip as illustrated in FIG. 32.

FIG. 33 is a view illustrating an example of a semiconductor light emitting device disclosed in US Patent Application Publication No. 2012/0171789. A light emitting device in which bumps 5 are bonded to terminals 3 formed on a circuit board 3 is mounted. have. An insulator 7 is interposed between the light emitting element electrodes. In terms of heat dissipation, the heat dissipation passage through the electrode and the terminal of the circuit board is very limited, and the heat dissipation area is small.

34 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 35 is a diagram illustrating an example of a cross section taken along a line A-A of FIG. 34. The semiconductor light emitting device includes at least one of the plurality of semiconductor layers 30, 40, 50, the first branch electrode 85, and the second branch electrode 75, the non-conductive reflective film R, the first electrode 80, and The second electrode 70 is included. The plurality of semiconductor layers may include a first semiconductor layer 30 having a first conductivity sequentially stacked, an active layer 40 for generating light through recombination of electrons and holes, and a second conductivity different from the first conductivity. 2 semiconductor layer 50 is included. The plurality of semiconductor layers have long edges facing each other and two short edges facing each other. The first branch electrode 85 extends from the one long edge to the other long edge on the exposed first semiconductor layer 30 by removing the second semiconductor layer 50 and the active layer 40. The second branch electrode 75 extends from the other long edge toward the one long edge on the second semiconductor layer 50. The nonconductive reflective film R is formed to cover the plurality of semiconductor layers, the first branch electrodes 85, and the second branch electrodes 75, and reflects light from the active layer 40. In this example, at least one of the first electrode 80 and the second electrode 70 is provided on the opposite side of the plurality of semiconductor layers with respect to the non-conductive reflective film R, and the non-conductive reflective film R It is a flip chip that is in electrical communication with the plurality of semiconductor layers by an electrical connection through the (). 34 and 35, the first electrode 80 is provided on one side of the long edge side non-conductive reflective film R to electrically communicate with the first semiconductor layer 30, and supplies one of electrons and holes. The second electrode 70 is provided on the other long edge side non-conductive reflective film R so as to be in electrical communication with the second semiconductor layer 50, and supplies the other one of electrons and holes.

Hereinafter, the group III nitride semiconductor light emitting element will be described as an example.

Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.

The plurality of semiconductor layers have a substantially rectangular shape, and when viewed from above, have long edges (long sides) facing each other and short edges (short sides) facing each other. The second semiconductor layer 50 and the active layer 40 are etched to form an n-contact region 65 through which the first semiconductor layer is exposed. A first branch electrode 85 is formed in the n-contact region 65. As described above, the first branch electrode 85 extends from the vicinity of one long edge to a direction toward the other long edge.

Preferably, the transparent conductive film 60 (eg, ITO, Ni / Au) is formed between the second semiconductor layer 50 and the reflective layer R. The first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, and the transparent conductive film 60 are formed on the substrate 10, and mesa-etched to form the n-contact region 65 described above. Can be formed. Mesa etching may be performed before or after the transparent conductive layer 60 is formed. The transparent conductive film 60 may be omitted.

The second branch electrode 75 extends from the vicinity of the other long edge on the light-transmissive conductive film 60 in a direction toward the one long edge. The plurality of first branch electrodes 85 and the plurality of second branch electrodes 75 may be alternately provided. The first branch electrode 85 and the second branch electrode 75 may be formed of a plurality of metal layers, and the contact layer and the light reflectivity having good electrical contact with the first semiconductor layer 30 or the transparent conductive layer 60 may be formed. A good reflective layer can be provided.

The non-conductive reflective film R is formed to cover the transparent conductive film 60, the first branch electrode 85, and the second branch electrode 75, and reflects light from the active layer 40 toward the substrate 10. do. In this example, the non-conductive reflecting film R is formed of an insulating material to reduce light absorption by the metal reflecting film, and may preferably have a multilayer structure including a distributed bragg reflector (DBR) or an omni-directional reflector (ODR). .

As described above, the first electrode 80 and the second electrode 70 are provided on the non-conductive reflective film R, and the edges facing each other of the first electrode 80 and the second electrode 70 are on one side. It extends from the vicinity of the short edge toward the other short edge. The first electrical connection 81 penetrates the non-conductive reflective film R to connect the first electrode 80 and the first branch electrode 85. The first branch electrode 85 is also provided for the current diffusion, but may reduce the contact resistance between the first electrical connection 81 and the first semiconductor layer 30 and may be interposed therebetween for stability of the electrical connection. The second electrical connection 71 penetrates the non-conductive reflective film R to electrically connect the second electrode 70 and the transparent conductive film 60. The second branch electrode 75 is also provided for the current diffusion, but may reduce the contact resistance between the second electrical connection 71 and the transparent conductive film 60 and may be interposed therebetween for stability of the electrical connection. The first branch electrode 85 extends below the second electrode 70 from below the first electrode 80, and the second branch electrode 75 extends from the bottom of the second electrode 70 to the first electrode 80. Stretches down).

The first electrode 80 and the second electrode 70 are electrodes for electrical connection with the external electrode, and may also be eutectic bonded, soldered, or wire bonded with the external electrode. The external electrode may be a conductive portion provided in the submount, a lead frame of the package, an electrical pattern formed on the PCB, and the like, and the external electrode may be provided independently of the semiconductor light emitting device.

36 is a view for explaining the semiconductor light emitting device of the comparative example, in which the first branch electrode 85 and the second branch electrode 75 extend along a long side. Thus, the n-contact region 65 is much longer than the example shown in FIGS. 34 and 35. Therefore, the active layer 40 is removed more by that much, and the light emitting area is further reduced. That is, in the devices shown in FIGS. 34 and 35, when the first branch electrodes 85 are formed in one direction from the one long edge to the other long edge or in the opposite direction, the emission area decreases and the luminance is reduced. Is improved. Further, the lengths of the first branch electrode 85 and the second branch electrode 75 are shorter in the examples shown in FIGS. 34 and 35 than in the comparative example shown in FIG. 36. Therefore, the light absorption loss by metals such as the

branch electrodes

75 and 85 can also be reduced, so that the luminance is improved. In addition, the example of the device shown in FIGS. 34 and 35 has advantages over the comparative example shown in FIG. 36 even when mounted on an external electrode. This is further described below.

37 is a diagram for describing another example of the semiconductor light emitting device according to the present disclosure, and FIG. 38 is a diagram illustrating an example of a cross section taken along a line B-B of FIG. 37. In this example, island type

ohmic electrodes

72 and 82 and a light absorption prevention film 41 are added, and the first electrode 80 and the second electrode 70 are connected to the

branch electrodes

75 and 85. Correspondingly, they are formed in plurality apart from each other. In addition, an example of the multilayer structure of the non-conductive reflective film R is shown.

Branch electrodes

75 and 85 extend toward the long edges and are formed shorter than the short edges. The first island-type ohmic electrode 82 is interposed between the first semiconductor layer 30 and the first electrical connection 81 to reduce contact resistance and improve stability of the electrical connection. The second island-type ohmic electrode 72 is interposed between the transparent conductive film 60 and the second electrical connection 71 to reduce contact resistance and improve stability of the electrical connection. The

electrical connections

71 and 81 are formed to surround the island-

type ohmic electrodes

72 and 82 to achieve a more stable electrical connection. The island-like

ohmic electrodes

72 and 82 do not extend differently from the

branch electrodes

75 and 85, and are formed in a circular or polygonal dot shape. A branch electrode is provided for current spreading, but in addition to reducing the length of the branch electrode by forming the branch electrode parallel to the short edge, for example, parallel to the short edge, the island-type ohmic electrode 72, By supplying current through 82, the

branch electrodes

75, 85 are prevented from unnecessarily lengthening. Therefore, the light absorption loss caused by the

branch electrodes

75 and 85 can be further reduced. In the n-contact region 65, portions corresponding to the first branch electrodes 85 and the first island-type ohmic electrodes 82 are formed separately from each other. Therefore, unnecessary elongation of the n-contact region 65 is prevented, and it is possible to further reduce the light emitting area reduction.

The light absorption prevention film 41 corresponds to the second branch electrode 75 and the second island-type ohmic electrode 72 between the second semiconductor layer 50 and the transparent conductive film 60 using SiO ₂ , TiO ₂ , or the like. Can be formed. The light absorption prevention film 41 may have only a function of reflecting a part or all of the light generated in the active layer 40, and a current flows directly below the second branch electrode 75 and the second island-type ohmic electrode 72. It may have only a function that prevents flow, or may have both functions.

The nonconductive reflecting film R includes, as an example of a multilayer structure, a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c. The dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light. SiO ₂ is a suitable material for the dielectric film 91b. The distributed Bragg reflector 91a is formed on the dielectric film 91b. The distribution Bragg reflector 91a may be composed of repeated stacking of materials having different reflectances, for example, SiO ₂ / TiO ₂ , SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO. SiO ₂ / TiO ₂ has good reflection efficiency, and for UV light, SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO will have good reflection efficiency. The clad film 91c may be made of a metal oxide such as Al ₂ O ₃ , a dielectric film 91b such as SiO ₂ , SiON, MgF, CaF, or the like.

When the

electrodes

70 and 80 are positioned on the non-conductive reflective film 91 such as DBR, light is absorbed by the

electrodes

70 and 80, but the

electrodes

70 and 80 have a high reflectance such as Ag and Al. It has been known that the reflectance can be increased in the case of a metal. In addition, the

electrodes

70 and 80 should also function for heat dissipation of the bonding pad and the semiconductor light emitting device, and thus, the size of the

electrodes

70 and 80 should be determined in consideration of these factors. However, the present inventors have found that when the non-conductive reflecting film R such as DBR is used, the light reflectance by the non-conductive reflecting film 91 increases as the size of the

electrodes

70 and 80 placed thereon is reduced. Experimental results provided an instrument capable of reducing the size of the

electrodes

70 and 80 to a range that could not be omitted in the prior art.

In the present example, unlike the example of FIG. 34, in which the first electrode 80 and the second electrode 70 are elongated from the vicinity of one short edge toward the other short edge, a plurality of first electrodes corresponding to each branch electrode is provided. 80 and the plurality of second electrodes 70 are formed apart from each other. Therefore, the light absorption loss by the electrode is reduced, and the reflectance of the nonconductive reflecting film R is higher.

39 and 40 illustrate examples of use of the semiconductor light emitting device according to the present disclosure, and a plurality of semiconductor

light emitting devices

101, 102, and 103 are mounted on the plate 200. The plate 200 includes a first conductive portion 201, a second conductive portion 202, and an insulating portion 203. The first electrode 80 and the second electrode 70 of the semiconductor light emitting device 101 are bonded to the first conductive portion 201 and the second conductive portion 202, respectively. The insulating portion 203 is interposed between the first conductive portion 201 and the second conductive portion 202, and corresponds between the first electrode 80 and the second electrode 70. The first conductive portion 201 and the second conductive portion 202 are exposed up and down, and the insulating portion 203 does not cover the

conductive portions

201 and 202 up and down, which is very effective for heat dissipation. The first conductive portion 201 and the second conductive portion 202 are alternately formed, and the first electrode 80 and the second electrode 70 of neighboring semiconductor light emitting devices are bonded to each conductive portion to form a plurality of semiconductors. The

light emitting elements

101, 102, 103 are connected in series. Of course, parallel connection is also possible.

34, 35, 37, and 38, the semiconductor light emitting device illustrated in FIG. 38 includes a first electrode 80 and a second electrode 70 near one side and the other long edge, respectively, and the branch electrode 75. 85 extend in a direction from one long edge to the other long edge, or vice versa. 39 and 40, the direction of the series connection is the direction in which the

branch electrodes

75 and 85 extend, which is more compact in the direction of the series connection to the plate 200 than in the case of connecting a plurality of elements of the comparative example shown in FIG. Can be implemented.

FIG. 41 is a view for explaining an example of a method of manufacturing a plate, and bonding a plurality of conductive plates 201 and 202 (for example, Al / Cu / Al) using an insulating material such as an insulating adhesive 203 (for example, epoxy) or the like. The laminate was prepared by repeating lamination in the manner as described above. By cutting such a laminate (eg, a wire cutting method), a plate 200 is formed, as shown in FIGS. 39 and 40. According to the cutting method, the plate may be formed long in a band shape, or may be formed as wide as a checker board. The width of the

conductive parts

201 and 202 and the width of the insulating part 203 may be adjusted by changing the thicknesses of the conductive plate and the insulating adhesive.

34, 35, 37, and 38, the semiconductor light emitting device described in FIG. 39 and 40, as shown in Figure 39 and 40, to form a rectangular package of approximately the same width and length using a plurality of semiconductor light emitting device It is easy. For example, in the case of the device of the comparative example shown in Fig. 36, there is a difficulty in making the horizontal and vertical similar because the device is arranged long in the series connection direction.

FIG. 42 is a view for explaining another example of a method of using a semiconductor light emitting device according to the present disclosure. The plurality of semiconductor light emitting devices mounted on the plate 200 may be covered with an encapsulant 210. For example, the encapsulant 210 may be formed by printing by a screen printing method, conformal coating, or by providing and curing a liquid resin. The encapsulant 210 may include a liquid transparent resin material such as silicone and the phosphor. As shown in FIG. 39, a package as shown in FIG. 42 may be manufactured by cutting the cured encapsulant and plate 110 together along a predetermined boundary (indicated by dotted lines) of the semiconductor light emitting device on a plane.

43 is a view for explaining another example of a method of using a semiconductor light emitting device according to the present disclosure. A dam 250 is formed around a plurality of semiconductor light emitting devices, and an encapsulant 210 is formed on the dam 250. Can be used to fill. For example, the dam 250 may be formed by printing, dispensing, and curing the white resin on the plate 200. Dam 250 is formed only as necessary on the upper surface of the plate 200, there is no unnecessary extension to the lower surface of the plate 200. Therefore, the plate 200 becomes a good heat sink with power transfer. In addition, as described above, the semiconductor light emitting device has a structure that is advantageous to be compactly mounted on the plate 200, so that the entire package may be more compact.

FIG. 44 is a view showing an example of an electrode structure disclosed in US Patent No. 6,307,218. The p-side bonding pad 700 according to the large area of the light emitting device (for example, 1000um / 1000um in width and length). ) And the branch electrodes having the same spacing at the n-side electrode 800 functioning as the n-side bonding pad, thereby improving current spreading, and in addition, the p-side bonding pad 700 and the n-side electrode for sufficient current supply. There are two 800 each. Although a plurality of

branch electrodes

710 and 810 and a plurality of bonding pads are introduced, the introduction of the plurality of

branch electrodes

710 and 810 includes a reverse function of reducing the light emitting area and thus reducing the light emitting efficiency.

FIG. 45 is a view showing an example of the electrode structure disclosed in US Patent Publication No. 2007-0096115. For the purpose of current diffusion in a light emitting device having a rectangular shape (for example, 600 μm / 300 μm in width and length). The branch electrode 710 and the branch electrode 810 are provided in each of the p-side bonding pad 700 and the n-side electrode 800 that functions as the n-side bonding pad.

46 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, and FIG. 47 is a diagram illustrating an example of a cross section taken along line A-A in FIG. 46. FIG. 46B is a light emission test photograph of the semiconductor light emitting device shown in FIG. 46A.

The semiconductor light emitting device includes a plurality of semiconductor layers 30, 40, 50,

first electrode portions

80, 85, 81a, 81b,

second electrode portions

70, 75, 71a, 71b, and a non-conductive reflective film R. ). The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30. ) And an active layer 40 interposed between the second semiconductor layer 50 and generating light by recombination of electrons and holes. The

first electrode portions

80, 85, 81a, and 81b are in electrical communication with the first semiconductor layer 30 and supply one of electrons and holes, and the

second electrode portions

70, 75, 71a, and 71b are made of 2 is in electrical communication with the semiconductor layer 50 and supplies the other one of electrons and holes. The non-conductive reflecting film R is formed on the plurality of semiconductor layers 30, 40, 50 and reflects light from the active layer 40.

In the present disclosure, at least one of the first electrode portion and the second electrode portion includes an upper electrode formed on the non-conductive reflective film R, a branch electrode extending from the upper electrode to the outside of the upper electrode, and a non-conductive reflective film R, when viewed from above. An electrical connection that penetrates and connects the upper electrode and the branch electrode, penetrates the non-conductive reflective film R, and electrically connects the upper electrode and the plurality of semiconductor layers 30, 40, and 50 to each other. Electrical connections that deviate from the extension line. Such arrangement of the branch electrode and the electrical connection may be applied to only one of the

first electrode portions

80, 85, 81a, 81b and the

second electrode portions

70, 75, 71a, 71b, but in this example, the first electrode The

electrode portions

80, 85, 81a, 81b and the

second electrode portions

70, 75, 71a, 71b all have this configuration.

In this example, the semiconductor light emitting device is a flip chip in which the upper electrode is provided on the opposite side of the plurality of semiconductor layers 30, 40, and 50 with respect to the non-conductive reflective film R. The

first electrode portions

80, 85, 81a, 81b include a first upper electrode 80, a first branch electrode 85, a first electrical connection 81a, and a second electrical connection 81b. The

second electrode portions

70, 75, 71a, and 71b include a second upper electrode 70, a second branch electrode 75, a third electrical connection 71a, and a fourth electrical connection 71b.

The semiconductor light emitting device according to the present disclosure is similar in width and length, or one of the width and length is longer than the other and is not particularly limited. The semiconductor light emitting device according to the present example is a structure for improving light extraction efficiency, and is particularly effective in a small device. In this example, the plurality of semiconductor layers 30, 40, and 50 have a short edge 110, the other short side 110 opposite to the short side 112, a long edge 111, and a long side 110. 111 has the other long side 113 opposite. The short side 112 may be smaller than the size 300 μm described in FIG. 45. For example, the short side 112 may be 200 μm or less, and the size of the short side 112 is not excluded.

The second electrical connection 81b is located farther from the long side 111 and closer to the short side 112 than the first electrical connection 81a. In other words, the distance between the long side 111 and the second electrical connection 81b is longer than the distance between the long side 111 and the first electrical connection 81a, and the distance between the short side 112 and the second electrical connection 81b is short side 112. ) And the distance between the first electrical connection 81a. The fourth electrical connection 71b is located farther from the other long side 113 and closer to the other short side 110 than the third electrical connection 71a. In other words, the distance between the other long side 113 and the fourth electrical connection 71b is longer than the distance between the other long side 113 and the third electrical connection 71a, and the distance between the other short side 110 and the fourth electrical connection 71b is It is shorter than the distance between the other short side 110 and the third electrical connection 71a.

The semiconductor layers 30, 405, and 80 are formed on the substrate 10, and sapphire, SiC, Si, GaN, and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed. The positions of the first semiconductor layers 30 and 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.

The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a second different from the first conductivity. A conductive second semiconductor layer 50 (eg, Mg-doped GaN) and an active layer interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes ( 40; e.g., InGaN / (In) GaN multi-quantum well structure). Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.

Preferably, a transparent conductive film 60 (eg, ITO, Ni / Au) is provided on the second semiconductor layer 50.

The non-conductive reflective film R is formed to cover the transparent conductive film 60, the first branch electrode 85, and the second branch electrode 75, and reflects light from the active layer 40 toward the substrate 10. do. In this example, the non-conductive reflecting film R is formed of an insulating material to reduce light absorption by the metal reflecting film, and may preferably have a multilayer structure including a distributed bragg reflector (DBR) or an omni-directional reflector (ODR). . For example, as shown in FIG. 47, the nonconductive reflecting film R includes a dielectric film 91b, a DBR 91a, and a clad film 91c sequentially stacked.

The first upper electrode 80 and the second upper electrode 70 are disposed on the short side 112 side and the other short side 110 side, respectively, on the non-conductive reflective film R. The first upper electrode 80 and the second upper electrode 70 may be directly bonded to the outside or wire bonded.

The first branch electrode 85 is provided on the first semiconductor layer 30 on the long side 111 side where the second semiconductor layer 50 and the active layer 40 are etched and exposed, and in this example, along the long side 111. Stretched. The first electrical connection 81a penetrates the non-conductive reflective film R to connect one end of the first upper electrode 80 and the first branch electrode 85 to each other. Alternatively, it may be considered that the first electrical connection 81a is connected to a portion other than the end of the first branch electrode 85. The second electrical connection 81b penetrates the non-conductive reflective film R to connect the exposed first semiconductor layer 30 by being etched with the first upper electrode 80. The first ohmic electrode 82 may be interposed between the first semiconductor layer 30 and the second electrical connection 81b to reduce contact resistance and improve stability of the connection. The second electrical connection 81b is off the extension of the first branch electrode 85. Here, the extension line means an imaginary line extending along the shape of the branch electrode. In this example, since the first branch electrode 85 is a straight line, the extension line is a line coinciding with the straight line, and is an imaginary line toward the corner of the semiconductor light emitting device. Will be the line of

The second branch electrode 75 is provided between the transparent conductive film 60 and the non-conductive reflective film R, and extends along the other long side 113 in this example. The third electrical connection 71a penetrates through the non-conductive reflective film R to connect one end of the second upper electrode 70 and the second branch electrode 75. Alternatively, it may be considered that the third electrical connection 71a is connected to a portion other than the end of the second branch electrode 75. The fourth electrical connection 71b penetrates the non-conductive reflective film R to connect the second upper electrode 70 and the transparent conductive film 60. The second ohmic electrode 72 may be interposed between the transparent conductive film 60 and the fourth electrical connection 71b to reduce contact resistance and improve stability of the connection. The fourth electrical connection 71b is out of an extension line of the second branch electrode 75.

The light absorption prevention layer 41 may be provided between the second semiconductor layer 50 and the transparent conductive layer 60 to correspond to the second branch electrode 75 and the second ohmic electrode 72, respectively. The light absorption prevention layer 41 may be formed of SiO ₂ , TiO _2, or the like, and may have only a function of reflecting some or all of the light generated from the active layer 40, and the second branch electrode 75 and the second It may have only a function of preventing current from flowing directly down from the ohmic electrode 72, or may have both functions.

The first branch electrode 85 and the second branch electrode 75 may be formed of a plurality of metal layers, and the contact layer and the light reflectivity having good electrical contact with the first semiconductor layer 30 or the transparent conductive layer 60 may be formed. A good reflective layer can be provided.

The semiconductor light emitting device according to the present embodiment is advantageous in reducing light absorption loss due to metal than the flip chip shown in FIGS. 30 and 31 by using the non-conductive reflecting film R instead of the metal reflecting film, without extending the branch electrode unnecessarily, Island-shaped

electrical connections

81b and 71b are suitably provided at positions necessary for improving current supply or uniformity of light emission.

On the other hand, in the semiconductor light emitting device illustrated in FIGS. 44 and 45, a method of forming a plurality of branch electrodes and extending the branch electrodes along a corner or a magnetic field is generally used for uniformity of current supply or light emission. . However, unlike the conventional method, the semiconductor light emitting device of the present example reduces the number and length of the branch electrodes to reduce the light absorption loss caused by the metal, but forms the electrical connection with the branch electrodes to achieve uniformity of current supply or light emission. We made a good composition of location, number, and so on. The configuration presented in this example is smaller in size and more effective for devices operating at low current.

To this end, the semiconductor light emitting device according to the present example includes only one first branch electrode 85 and one second branch electrode 75, and the length thereof does not extend to the short side 112 or the other short side 110. Relatively short Here, the provision of only one by one is presented as a good example of a configuration in which the number of branch electrodes is as small as possible, and includes two or more first branch electrodes 85 and / or two or more second branch electrodes 75. This does not mean to exclude the same configuration. In addition, in the present example, since the first semiconductor layer (eg, Si-doped GaN) has better current diffusion than the second semiconductor layer (eg, Mg-doped GaN), the first semiconductor layer (eg, Si-doped GaN) is designed in consideration of this.

46 and 47, since the short side 112 is not long, the first branch electrode 85 and the second branch electrode 75 are provided on the long side 111 and the other long side 113, respectively. The gap between the branch electrode 85 and the second branch electrode 75 is secured. The first branch electrode 85 is connected to the first electrical connection 81a under the first upper electrode 80 on the long side 111 side, and the second upper electrode 70 adjacent to the first upper electrode 80. It extends shortly underneath). The second branch electrode 75 is connected to the third electrical connection 71a under the second upper electrode 70 on the other long side 113 side, and the first branch electrode below the first upper electrode 80. It extends longer than 85 but does not extend to the short side 112, but extends to about the middle of the first upper electrode 80 to suppress unnecessary extension. Of course, if the degree of current diffusion of the second semiconductor layer 50 such as p-GaN is improved, the second branch electrode 75 may be formed as short as the first branch electrode 85. In this way, the first branch electrode 85 and the second branch electrode 75 do not extend along the corner or the side so that the light absorption loss due to the metal is reduced. In addition, in the case of the first branch electrode 85, which needs to mesa-etch the second semiconductor layer 50 and the active layer 40, it is provided on the long side 111 side rather than the inside of the device to reduce the active layer area due to mesa etching. Reduce the degree

The second electrical connection 81b and the fourth electrical connection 71b have an island shape when viewed from above, and a small number is used, and in this example, one each is provided. Here, the island form means a shape such as a circle, a polygon, and the like, rather than extending to one side like a branch electrode. In this way, a limited number of positions of the second electrical connection 81b and the fourth electrical connection 71b are provided at a more preferable position for improving the uniformity of the current supply, and as a result, they are located out of the extension line.

In this example, the second electrical connection 81b is located approximately midway on the short side 112 side, and the fourth electrical connection 71b is located slightly away from the other short side 110. As a result, the second electrical connection 81b is positioned off the extension of the first branch electrode 85, and the fourth electrical connection 71b is positioned off the extension of the second branch electrode 75. In addition, in the present example, the second electrical connection 81b deviates from the extension of the second branch electrode 75, and the fourth electrical connection 71b deviates from the extension of the first branch electrode 85.

In view of the electrical connection, the second electrical connection 81b is located farther from the long side 111 and closer to the short side 112 than the first electrical connection 81a, and the fourth electrical connection 71b is It is located farther from the other long side 113 and closer to the other short side 110 than the third electrical connection 71a. In addition, there is no branch electrode between the second electrical connection 81b and the fourth electrical connection 71b.

Referring to FIG. 46B, it can be seen that the degree of light emission is not largely large in the semiconductor light emitting device under conditions such as 200 μm of the

short side

112, 800 μm of the

long side

111, and 20 mA. As described above, the two

branch electrodes

85 and 75 and the two island-type

electrical connections

81b and 71b have a simple configuration and ensure uniformity of current supply, and light loss due to metal is also greatly reduced. In particular, it is an effective structure for small size devices operating at relatively low current.

FIG. 48 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. Referring to FIGS. 46 to 48, first, as illustrated in FIG. 47, the first semiconductor on the substrate 10 is illustrated. After forming the layer 30, the active layer 40, the second semiconductor layer 50, and forming the light absorption prevention film 41, a transparent conductive film 60 (e.g., ITO) is formed thereon, and FIG. 48A. As shown in, mesa etching exposes a portion of the first semiconductor layer 30. Mesa etching may be performed before the transparent conductive film 60 is formed. The transparent conductive film 60 may be omitted.

47 and 48B, a first branch electrode 85, a second branch electrode 75, and an ohmic electrode may be disposed on the exposed first semiconductor layer 30 and the transparent conductive film 60, respectively. 72,82). Although the

ohmic electrodes

72 and 82 may be omitted, the

ohmic electrodes

72 and 82 are preferably provided to suppress an increase in operating voltage and to provide stable electrical contact. Thereafter, the reflective layer R is formed on the transparent conductive film 60. In this example, the reflective layer R is formed of an insulating material to reduce light absorption by the metal reflective film, and may preferably have a multilayer structure including a distributed bragg reflector (DBR) or an omni-directional reflector (ODR). For example, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91f are formed to form the non-conductive reflective film R. The dielectric film 91b or the clad film 91f may be omitted. The distributed Bragg reflector 91a is formed by stacking a pair of SiO ₂ and TiO ₂ a plurality of times, for example. In addition, the distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta ₂ O ₅ , HfO, ZrO, SiN, and a dielectric thin film (typically SiO ₂ ) having a lower refractive index. The non-conductive reflective film R may have a thickness of about several μm (eg, 1 to 8 μm).

Subsequently, an opening is formed in the non-conductive reflecting film R by a method such as dry etching, and the first electrical connection 81a, the second electrical connection 81b, the third electrical connection 71a, and the first through the opening. 4 Form the electrical connection 71b. The first upper electrode 80 and the second upper electrode 70 are formed on the non-conductive reflective film R. The

electrical connections

71 and 81 and the

upper electrodes

70 and 80 may be formed separately, but may be integrally formed in one process.

49 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure. Referring to FIG. 49A, second and fourth

electrical connections

81b and 81c and 71b and 71c may be formed in a semiconductor light emitting device. Plural can be provided. The plurality of second

electrical connections

81b and 81c deviate from an extension line of the first branch electrode 85. In this example, the distance from the long side 111 increases in the order of the two second

electrical connections

81b and 81c away from the first electrical connection 81a and approaches the short side 112. The plurality of fourth

electrical connections

71b and 71c deviate from an extension line of the second branch electrode 75. In the present example, the distance from the other long side 113 increases in order of the two fourth

electrical connections

71b and 71c away from the third electrical connection 71a and approaches the other short side 110.

Referring to FIG. 49B, in the semiconductor light emitting device, since the current spreading degree of the second semiconductor layer 50 is less than that of the first semiconductor layer 30, the number of fourth

electrical connections

71b and 71c is changed to the second electrical connection. It can be provided more than the number of 81b. In this example, the two fourth

electrical connections

71b and 71c deviate from the extension of the second branch electrode 75. One fourth electrical connection 71b is located on the other short side 110 side, and the other fourth electrical connection 71c is located on the long side 111 side.

50 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. Referring to FIG. 50A, in the semiconductor light emitting device, an end of the first branch electrode 85 may be disposed under the second upper electrode 70. It is bent toward the fourth electrical connection 71b, and the end of the second branch electrode 75 is bent toward the second electric connection 81b under the first upper electrode 80.

Referring to FIG. 50B, the fourth

electrical connections

71b and 71c are larger than the number of the second electrical connections 81b, the ends of the first branch electrodes 85 are bent, and the ends of the second branch electrodes 75. Bends below the first upper electrode 80 toward the long side 111 side corner. Accordingly, the first electrical connection 81a and the second electrical connection 81b are located on opposite sides with respect to the second branch electrode 75.

51 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. When the length difference between the short side 112 and the long side 111 is smaller than the above-described examples, the fourth electrical connection 71b may include It is located at a distance similar to the third electrical connection 71a from the other short side 110 and is out of an extension line of the second branch electrode 75.

FIG. 52 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. Compared to the embodiment of FIG. 46, the second electrical connection 81b is deleted, and the first branch electrode 85 is formed. It is formed only below the first upper electrode 80, and the first electrical connection 81a is provided at the short side corner.

53 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure, and FIG. 54 is a light emission photograph of the semiconductor light emitting device shown in FIG. 53. In contrast to the embodiment shown in FIG. 46, for the embodiment shown in FIG. 53A, the first branch electrode 85 is deleted, and for the embodiment shown in FIG. 53B, the first branch electrode 85 is deleted, and 4 Electrical connection 71c is added.

55 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure, and FIG. 56 is a light emission photograph of the semiconductor light emitting device shown in FIG. 55. In contrast to the embodiment shown in FIG. 46, in the case of the embodiment shown in FIG. 55A, the first branch electrode 85 is deleted, the second branch electrode 75 extends from the center of the emitting surface, and the second electrical connection ( 81b) is added. In the embodiment shown in FIG. 55B, the first branch electrode 85 is deleted, the second branch electrode 75 extends at the center of the emission surface, and the first branch electrode 85 extends along the short side. The second electrical connection 81b is deleted.

FIG. 57 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. Compared to the embodiment of FIG. 46, the second branch electrode 75 is deleted, and the fourth electrical connection 71c is removed. It is added.

58 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 60 is a diagram illustrating an example of a cross section taken along the line A-A of FIG. 59. The semiconductor light emitting device includes at least one of the plurality of semiconductor layers 30, 40, 50, the first branch electrode 85, and the second branch electrode 75, the non-conductive reflective film R, the first electrode 80, and The second electrode 70 is included. The first electrode 80 includes a plurality of sub-electrodes 80a and at least one connecting portion 80b for connecting the plurality of sub-electrodes 80a. The second electrode 70 includes at least one connecting portion 70b connecting the plurality of sub electrodes 70a and the plurality of sub electrodes 70a.

Since the thermal expansion coefficients of the

electrodes

80 and 70 differ from the non-conductive reflecting film R, the bonding strength of the

electrodes

80 and 70 with the non-conductive reflecting film R may be reduced during long time use or during a manufacturing process. In this example, the

electrodes

80, 70 are segmented into a plurality of sub-electrodes 80a, 70a, and are connected by the connecting

portions

80b, 70b, so that each sub-electrode 80a, 70a is subjected to thermal expansion. There is a buffer region (R80, R70) for. Therefore, the above problems due to thermal expansion can be suppressed or prevented. In addition, the

electrodes

80 and 70 are not formed as a single cylinder, and are connected to each other by the connecting

portions

80b and 70b, which is advantageous for reducing the area of the

electrodes

80 and 70 as a whole. The inventors have found that the luminance improves as the area of (80,70) decreases.

The plurality of semiconductor layers 30, 40 and 50 have a substantially rectangular shape and when viewed from above, have long edges facing each other and two short edges facing each other. The second semiconductor layer 50 and the active layer 40 are etched to form an n-contact region 65 through which the first semiconductor layer is exposed. A first branch electrode 85 is formed in the n-contact region 65. As described above, the first branch electrode 85 extends from the vicinity of one long edge to a direction toward the other long edge. The second branch electrode 75 extends from the other long edge toward the one long edge on the second semiconductor layer 50.

Preferably, a transparent conductive film 60 (eg, ITO, Ni / Au) is formed between the second semiconductor layer 50 and the non-conductive reflective film R. The first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, and the transparent conductive film 60 are formed on the substrate 10, and mesa-etched to form the n-contact region 65 described above. Can be formed. Mesa etching may be performed before or after the transparent conductive layer 60 is formed. The transparent conductive film 60 may be omitted.

The second branch electrode 75 extends from the vicinity of the other long edge on the light-transmissive conductive film 60 in a direction toward the one long edge. The plurality of first branch electrodes 85 and the plurality of second branch electrodes 75 are alternately provided. The first branch electrode 85 and the second branch electrode 75 may be formed of a plurality of metal layers, and the contact layer and the light reflectivity having good electrical contact with the first semiconductor layer 30 or the transparent conductive layer 60 may be formed. A good reflective layer can be provided.

In the present example, the first branch electrode 85 avoids the region not covered by the buffer region R70 of the second electrode 70, that is, the connection portion 70b between the sub-electrodes 70a, and thus, the second electrode ( 70) stretched down. In addition, the second branch electrode 75 avoids the region not covered by the buffer region R80 of the first electrode 80, that is, the connection portion 80b between the sub-electrodes 80a, and thus, the first electrode 80. Stretched down.

The non-conductive reflective film R is formed to cover the transparent conductive film 60, the first branch electrode 85, and the second branch electrode 75, and reflects light from the active layer 40 toward the substrate 10. do. In this example, the non-conductive reflector R is formed of an insulating material to reduce light absorption by the metal reflector, and is preferably a distributed Bragg reflector, an omni-directional reflector, or the like. It may be a multilayer structure comprising a.

In this example, the first electrode 80 and the second electrode 70 are provided on the nonconductive reflecting film R. As another example, the metal reflective film is provided on the second semiconductor layer 50, the second electrode 70 is provided on the metal reflective film, and the first semiconductor layer 30 and the first electrode 80 exposed by mesa etching. ) May be communicated.

In this example, the first electrical connection 81 connects the first electrode 80 and the first branch electrode 85 through the non-conductive reflective film R. The second electrical connection 71 penetrates the non-conductive reflective film R to electrically connect the second electrode 70 and the transparent conductive film 60.

The first electrode 80 is provided on one side of the long edge side non-conductive reflective film R, and the second electrode 70 is provided on the other side of the long edge side non-conductive reflective film R. The first electrode 80 and the second electrode 70 each include a plurality of

sub electrodes

80a and 70a and at least one

connection part

80b and 70b. In the first electrode 80, the plurality of sub-electrodes 80a are arranged in a line along the one long edge and are connected by the plurality of connecting portions 80b. In the second electrode 70, the plurality of sub-electrodes 70a are arranged in a line along the other long edge and are connected by a plurality of connecting portions 70b. In the width in the direction orthogonal to the connecting direction by the connecting

portions

80b and 70b, each connecting

portion

80b and 70b is smaller in width than the respective sub-electrodes 80a and 70a connected by the connecting

portions

80b and 70b. Has The connecting

portions

80b and 70b may be viewed as bridges connecting the plurality of

sub electrodes

80a and 70a. Therefore, the non-conductive reflective film R is exposed in the buffer regions R80 and R70 not covered by the connecting

portions

80b and 70b between the adjacent sub-electrodes 80a and 70a. In this example, when viewed in a direction orthogonal to the connection direction, each of the

connection portions

80b and 70b is located approximately at the center of each of the sub-electrodes 80a and 70a to be connected. Alternatively, when viewed in a direction orthogonal to the connecting direction, each of the connecting

portions

80b and 70b enters inward from the edges of the respective sub-electrodes 80a and 70a to be connected. Of course, when viewed in the orthogonal direction, each of the connecting

portions

80b and 70b may be located at the edge or the edge of each of the sub-electrodes 80a and 70a.

In the connection process with the external electrode or in the manufacturing process, the stress is applied between the non-conductive reflecting film R and the electrode due to heat, so that the electrode may be peeled off from the non-conductive reflecting film R and the bonding force may be lowered. The buffer regions R80 and R70 which are not covered by the connecting

portions

80b and 70b are formed between the

sub electrodes

80a and 70a. As a result, the peeling or the lowering of the bonding force can be suppressed or prevented. In particular, when the size of the semiconductor light emitting device is large, the electrode size is also long or wide, the thermal expansion difference may be a problem, in this case, as shown in the present example, the electrode is divided into a plurality of sub-electrodes (80a, 70a), the connection portion 80b The configuration connected by 70b can solve the above problem.

On the other hand, when the first branch electrode 85 and the second branch electrode 75 extend along the long side, the n-contact region 65 becomes much longer than in this example. Therefore, the active layer 40 is removed more by that much, and the light emitting area is further reduced. That is, in the devices shown in FIGS. 58 and 59, when the first branch electrodes 85 are formed in one direction from the one long edge to the other long edge or vice versa, the emission area decreases and the luminance is reduced. Is improved. In addition, the lengths of the first branch electrode 85 and the second branch electrode 75 may be shorter. Therefore, the light absorption loss by metals such as the

branch electrodes

75 and 85 can also be reduced, so that the luminance is improved. In addition, the example of the device illustrated in FIGS. 58 and 59 has advantages over the device in which the branch electrode extends along a long side even when mounted on the external electrode.

60 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and

branch electrodes

85 and 75 extend along a long side. When the

electrodes

80 and 70 are not relatively long, the number of the

sub electrodes

80a and 70a is also reduced, and the number of the connecting

portions

80b and 70b is also reduced. The buffer regions R80 and R70 not covered by the connecting

portions

80b and 70b between the adjacent sub-electrodes 80a and 70a may be wider than the example shown in FIG. 58. That is, the buffer regions R80 and R70 simply extend beyond notches at the edges of the

electrodes

80 and 70, as shown in FIG. 60, for example, a considerable area comparable to the

connections

80b and 70b. In this regard, the embodiment may be considered to have a width of 1/2 or more of the

connection portions

80b and 70b.

FIG. 61 is a diagram for describing another example of the semiconductor light emitting device according to the present disclosure, and FIG. 62 is a diagram illustrating an example of a cross section taken along a line B-B of FIG. 61. In this example, island type

ohmic electrodes

72 and 82, and light absorption prevention film 41 are added, and an example of the multilayer structure of the non-conductive reflecting film R is shown. Compared to the example illustrated in FIG. 58, the distance between the

sub electrodes

80a and 70a is further increased, and the area of the buffer regions R80 and R70 is increased compared to the connecting

portions

80b and 70b. In the present example, the first branch electrode 85 extends below the connecting portion 70b of the second electrode 70, and the second branch electrode 75 also under the connecting portion 80b of the first electrode 80. As laid out.

Branch electrodes

electrical connections

71 and 81 are formed to surround the island-

type ohmic electrodes

72 and 82 to achieve a more stable electrical connection. The island-

type ohmic electrodes

72 and 82 are formed in a point shape such as a circle or a polygon without extending, unlike the

branch electrodes

75 and 85, and prevent the

branch electrodes

75 and 85 from being unnecessarily long.

When the

electrodes

70 and 80, but the

electrodes

70 and 80 have a high reflectance such as Ag and Al. It has been known that the reflectance can be increased in the case of a metal. In addition, since the

electrodes

70 and 80 must also function to dissipate the bonding pads and the semiconductor light emitting device, the size of the

electrodes

70 and 80 to a range that could not be omitted in the prior art.

In this example, the first electrode 80 and the second electrode 70 are divided into a plurality of sub-electrodes 80a and 70a, which is advantageous in reducing the electrode area, and using the connecting

portions

80b and 70b to form a plurality of electrodes. The sub-electrodes 80a and 70a are connected to each other to prevent the electrical connection from being biased. In addition, the buffer regions R80 and R70 formed by the connecting

portions

80b and 70b are formed, thereby preventing the peeling and the like due to the relaxation of the stress during thermal expansion.

FIG. 63 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. In the present example, the first electrode 80 and the second electrode 70 each include a plurality of sub-electrodes 80a and 70a and these. It includes a plurality of connecting parts (80b, 70b) for connecting. The first branch electrode 85 extends to correspond to the buffer portion of the second electrode 70 without passing under the connection portion 70b of the second electrode 70. The second branch electrode 75 does not pass under the connecting portion 80b of the first electrode 80 but extends to correspond to the buffer region R80 of the first electrode 80. As described above,

branch electrodes

85 and 75 may be formed under the buffer regions R80 and R70 to reduce the occurrence of irregularities in the first electrode 80 and the second electrode 70 by the

branch electrodes

85 and 75. have.

64 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. The first electrode 80 and the second electrode 70 are divided into a plurality of sub-electrodes 80a and 70a, respectively. The plurality of sub-electrodes 80a and 70a are arranged along the long side and connected by the connecting

portions

80b and 70b. The first branch electrode 85 does not extend below the second electrode 70, but has a branch 85b extending along an approximately long side and a branch 85a connected to the electrical connection 81. The second branch electrode 75 has a branch 75a extending along the short side and a branch 75b extending along the long side.

FIG. 65 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, in which a plurality of sub electrodes 75a are arranged along a long side, and a plurality of connection portions 75b are used to define the plurality of sub electrodes 75a. Connected but arranged in a zigzag pattern. When the plurality of sub-electrodes 75a are arranged in a zigzag manner when the plurality of sub-electrodes 75a are thermally expanded, it helps to relieve the stress that causes the plurality of the sub-electrodes 75a to peel off from the non-conductive reflecting film R. Can be.

66 and 67 are diagrams for describing a use example of a semiconductor light emitting device according to the present disclosure, and a plurality of semiconductor

light emitting devices

101, 102, and 103 are mounted on a plate 200. The plate 200 includes a first conductive portion 201, a second conductive portion 202, and an insulating portion 203. The first electrode 80 and the second electrode 70 of the semiconductor light emitting device 101 are bonded to the first conductive portion 201 and the second conductive portion 202, respectively. The insulating portion 203 is interposed between the first conductive portion 201 and the second conductive portion 202, and corresponds between the first electrode 80 and the second electrode 70. The first conductive portion 201 and the second conductive portion 202 are exposed up and down, and the insulating portion 203 does not cover the

conductive portions

light emitting elements

58, 61, 64, and 65 in the semiconductor light emitting device described above, the first electrode 80 and the second electrode 70 are provided on one side and the other side near the long edge of the plurality of semiconductor light emission When the devices are connected in series, the plate 200 may be more compactly mounted in the direction of the series connection.

FIG. 68 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. FIG. 69 is a view for explaining an example of a cross section along the line AA of FIG. 68, and the semiconductor light emitting device may include a plurality of semiconductor layers ( 30, 40, 50, non-conductive reflective film R, first electrode 80, second electrode 70, first branch electrode 85, second branch electrode 75, first electrical connection 81 ), And a second electrical connection 71. The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30. ) Between the second semiconductor layer 50 and the second semiconductor layer 50 to generate light by recombination of electrons and holes. The non-conductive reflecting film R is formed on the plurality of semiconductor layers 30, 40, and 50 to reflect light from the active layer 40. The first electrode 80 is formed on the non-conductive reflective film R and has a pad portion 83 and a protrusion 88 protruding from the pad portion 83. The second electrode 70 is formed on the non-conductive reflective film R to face the protrusion 88. The first branch electrode 85 is formed on the second semiconductor layer 50 and the first semiconductor layer 30 to which the active layer 40 is etched and exposed. The first branch electrode 85 extends between the first electrode 80 and the second electrode 70 under the protrusion 88. The second branch electrode 75 is formed to extend under the first electrode 80 under the second electrode 70 between the second semiconductor layer 50 and the non-conductive reflective film R. The second branch electrode 75 may be omitted. The first electrical connection portion 81 penetrates the non-conductive reflective film R to connect the protrusion 88 and the first branch electrode 85. The other first electrical connection 81 electrically communicates the first semiconductor layer 30 and the first electrode 80 without the first branch electrode 85. The second electrical connector 71 penetrates the non-conductive reflective film R to electrically communicate the second electrode 70 and the second semiconductor layer 50. The other second electrical connection 71 electrically connects the second semiconductor layer 50 and the second electrode 70 without the second branch electrode 75.

The second branch electrode 75 is provided at both sides of the first branch electrode 85, and each second electrical connection 71 connected to the second branch electrode 75 is formed to face the first electrode 80. It is located adjacent to the edge of the two electrodes 70. In plan view, the first electrical connection portion 81 may intersect the edge of the pad portion 83 of the first electrode 80, and the protrusion 88 may correspond to the first electrical connection portion 81. It protrudes from 83. When the area of the mesa etching region 35 (n-contact region) corresponding to the first branch electrode 85 increases, the luminance of the semiconductor light emitting device decreases. In particular, in the semiconductor light emitting device having a small size, it is necessary to reduce the area of mesa etching.

Referring to the comparative example shown in FIG. 70B, the first branch electrode 85 extends long from the center of the first electrode 80 to the bottom of the second electrode 70. On the other hand, in the present example, the first branch electrode 85 extends slightly below the second electrode 70, and the protruding portion 88 in which one end of the first branch electrode 85 protrudes from the pad portion 83. It is located below. That is, the first branch electrode 85 does not extend under the pad portion 83 of the first electrode 80. Therefore, in this example, the area of mesa etching is much reduced compared to the comparative example. Uniformity of current supply is also achieved by providing

electrical connections

81 and 71 which are not connected to branch

electrodes

85 and 75. In addition, it is necessary to mount the semiconductor light emitting device on a substrate such as a PCB or to distinguish between the p-side (eg, the second electrode) and the n-side (eg, the first electrode) during inspection. 88 can be easily identified from the external appearance of the semiconductor light emitting element, and can be used as a means for distinguishing the p side and the n side.

Preferably, a transparent conductive film 60 (eg, ITO, Ni / Au) is formed on the second semiconductor layer 50. The first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, and the transparent conductive film 60 are formed on the substrate 10, and mesa-etched to form the n-contact region 35 described above. Can be formed. Mesa etching may be performed before or after the transparent conductive layer 60 is formed. The transparent conductive film 60 may be omitted.

The second branch electrode 75 is formed on the transparent conductive film 60. The first branch electrode 85 and the second branch electrode 75 may be formed of a plurality of metal layers, and the contact layer and the light reflectivity having good electrical contact with the first semiconductor layer 30 or the transparent conductive layer 60 may be formed. A good reflective layer can be provided.

Preferably, the light absorption prevention film 41 is formed between the second semiconductor layer 50 and the transparent conductive film 60 by using SiO ₂ , TiO _2, or the like. It is formed corresponding to (71). The light absorption prevention film 41 may have only a function of reflecting some or all of the light generated in the active layer 40, and no current flows directly from the second branch electrode 75 and the second electrical connection 71. It may have only a function that prevents it, or may have both functions.

The nonconductive reflecting film R may include, for example, a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c. The dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light. SiO ₂ is a suitable material for the dielectric film 91b. The distributed Bragg reflector 91a is formed on the dielectric film 91b. The distribution Bragg reflector 91a may be composed of repeated stacking of materials having different reflectances, for example, SiO ₂ / TiO ₂ , SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO. SiO ₂ / TiO ₂ has good reflection efficiency, and for UV light, SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO will have good reflection efficiency. The clad film 91c may be made of a metal oxide such as Al ₂ O ₃ , a dielectric film 91b such as SiO ₂ , SiON, MgF, CaF, or the like.

An opening is formed in the non-conductive reflective film R, an electrical connection is formed in the opening, and the first electrode 80 and the second electrode 70 may be formed together with the electrical connection.

70A is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. In this example, the first electrode 80 may include a pad portion 83 and a protrusion 88 protruding from the pad portion 83. Include. The second electrode 70 includes a pad portion 73 and a protrusion 78 protruding from the pad portion 73 between the first electrode 80 and the second electrode 70. The second branch electrode 75 extends below the first electrode 80 between the second semiconductor layer 50 and the nonconductive reflective film R under the protrusion 78 of the second electrode 70. The second electrical connection 71 connects the protrusion 78 of the second electrode 70 and the second branch electrode 75. The second branch electrodes 75 are provided at both sides of the first branch electrode 85, respectively, and each protrusion 78 from the pad portion 73 of the second electrode 70 in correspondence with each of the second branch electrodes 75. ) Is formed. In the present example, unlike the comparative example shown in FIG. 70B, the second branch electrode 75 does not extend below the pad portion 73 of the second electrode 70 under the protrusion 78. Thus, the light absorption loss by the metal is further reduced by that. Both the first electrode 80 and the second electrode 70 have

protrusions

88 and 78, and the

branch electrodes

85 and 75 do not extend below the

pad portions

83 and 73, so that light absorption loss due to metal is lost. This decreases, and the area of mesa etching is also reduced to suppress the decrease in the amount of emitted light.

FIG. 71 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure. The second branch electrodes 75 are provided at both sides of the first branch electrode 85, respectively, and each second branch electrode 75 is provided. The ends are bent toward each other. By bending as described above, the difference between the positions of the first branch electrodes 85 and the second branch electrodes 75 may be reduced according to positions, and the uniformity of current supply or light emission may be improved. The semiconductor light emitting device has a rectangular shape when viewed in plan view, and the first branch electrode 85 is formed from the long sides and the short sides of the rectangular shape approximately in the center of the rectangular shape due to the protrusion 88 of the first electrode 80. It may be placed in an even position. Each second branch electrode 75 also extends along each long side, and the tip is bent as described above, and the second branch electrodes 75 are symmetrically arranged with respect to the first branch electrode 85. Therefore, it has a very symmetrical structure and is a good structure for improving uniformity. In this way, the protrusions 88 also contribute to the improvement of uniformity or uniformity of electrode arrangement.

Meanwhile, in the example shown in FIG. 71B, the first branch electrode 85 is located only between the first electrode 80 and the second electrode 70 without extending below the second electrode 70. Thus, the area of mesa etching can be further reduced, and symmetry or uniformity is further improved.

FIG. 72 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure. In this example, the second branch electrodes 75 are provided at both sides of the first branch electrode 85, respectively. Each of the second branch electrodes 75 on both sides of the electrode 85 is connected to each other under at least one of the first electrode 80 and the second electrode 70 to form one branch electrode. In FIG. 72A, the second branch electrodes 75 on both sides are connected under the second electrode 70. In FIG. 72B, the second branch electrodes 75 on both sides under the first electrode 80 and the second electrode 70 are connected to each other. 75) is connected to form a closed loop. By connecting the second branch electrodes 75 on both sides to form a single body, uniformity of current supply and uniformity of light emission can be improved.

FIG. 73 is a view for explaining the relationship between the area of the electrode and the luminance of the semiconductor light emitting element. When the

electrodes

70 and 80 are positioned on the non-conductive reflective film R such as DBR, Although light is absorbed, it has been known that the reflectance can be increased when the

electrodes

70 and 80 are made of a metal having high reflectance such as Ag and Al. In addition, since the

electrodes

70 and 80 should be determined in consideration of these factors. However, the present inventors have found that when the non-conductive reflective film R such as DBR is used, the light reflectance by the non-conductive reflective film R increases as the size of the

electrodes

70 and 80 to a range that could not be omitted in the prior art. In addition, since the electrodes had

protrusions

88 and 78, it was possible to suppress the increase in the length of the branch electrodes while reducing the area of the electrodes.

The distribution Bragg reflector 91a reflects better as light closer to the vertical direction reflects light of approximately 99% or more. However, the light incident at an angle passes through the distribution Bragg reflector 91a and enters the upper surface of the clad film 91c or the non-conductive reflecting film R, and the light is almost not covered by the

electrodes

80 and 70. Although reflected, part of the light incident on the

electrodes

80 and 70 is absorbed.

Meanwhile, as shown in FIG. 73, luminance was tested by changing the gap G and the area ratio between the

electrodes

80 and 70. The distance G is changed to 150 um (FIG. 73A), 300 um (FIG. 73B), 450 um (FIG. 73C) and 600 um (FIG. 73D), and the gap between the outer edge of the semiconductor light emitting element and the outer edge of the

electrodes

80 and 70 Is constant. The distance (W) between the edges of the semiconductor light emitting element in the direction in which the

electrodes

80, 70 face each other is 1200um, the vertical length (c) is 600um, the width (B) of the

electrodes

80, 70 is 485,410,335,260um The length A of the

electrodes

80 and 70 is constant at 520 um. The area ratio of the planar area of the semiconductor light emitting element to the

electrodes

80 and 70 is 0.7, 0.59, 0.48 and 0.38, respectively. If the distance between the

electrodes

80 and 70 is 80 um, the area ratio is 0.75. When the areas of the

electrodes

80 and 70 are the same, it is found that there is no significant difference in luminance even when the distance between the

electrodes

80 and 70 changes.

The upper graph in FIG. 73 is a graph showing the results of the described experimental examples. When the reference luminance is 100, 106.79 (FIG. 73A), 108.14 (FIG. 73B), 109.14 (FIG. 73C), and 111.30 (FIG. 73D). The luminance of was confirmed. It can be seen that the increase in luminance is considerably high. If the area ratio of the

electrodes

80 and 70 is smaller than 0.38, there may be further increase in luminance.

74 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. The

pad portions

83 and 73 and the

protrusions

88 and 78 of the first electrode 80 and the second electrode 70, respectively, are illustrated. Include. In plan view, the first electrical connection 81 is spaced apart from the edge of the pad portion 83 of the first electrode 80 toward the second electrode 70, and the protrusion 88 is formed of the first electrode 80. After extending from the pad portion 83 toward the second electrode 70, the distal end of the protrusion 88 is connected to the first electrical connection 81. The pad portion 83 of the first electrode 80 and the pad portion 73 of the second electrode 70 are smaller than the area indicated by the dotted lines, so that light absorption by the metal is reduced as described with reference to FIG. 73. The brightness is improved. When the area of the

electrodes

80 and 70 is reduced in this manner, when the first electrical connection portion 81 connected to the first branch electrode 85 moves along the pad portion 83 side of the first electrode 80, The length of the first branch electrode 85 is increased and the mesa etching area is increased. In this example, since the protrusion 88 is formed long, the first electrical connection 81 is connected at the end of the protrusion 88, thereby increasing the length of the first branch electrode 85 and increasing the area of the mesa etching.

In this example, the plurality of semiconductor layers 30, 40, 50 have etched or cut side surfaces. For example, the circumferences of the plurality of semiconductor layers 30, 40, and 50 have mesa-etched edges. In this example, when viewed from the top view, the distance E between the first electrode 80 and the second electrode 70 and the side surfaces of the plurality of semiconductor layers 30, 40, and 50 is 50 μm. As described above, cracks generated in the non-conductive reflective film R are not easily propagated to the first electrode 80 and the second electrode 70. Thus, peeling of the

electrodes

80 and 70 due to cracks is prevented. In addition, when bonding the

electrodes

80 and 70 to the external electrode, the bond material may be prevented from rising to the side surfaces of the plurality of semiconductor layers 30, 40, and 50.

FIG. 75 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. Since the protrusion 88 is long and the first electrical connection 81 is connected to the end of the protrusion 88, an electrode area Even if this decreases, the first branch electrodes 85 do not become long. In addition, the first branch electrode 85 is formed so as not to extend below the second electrode 70, and the second branch electrodes 75 on both sides of the first branch electrode 85 are bent toward each other. Therefore, uniformity or symmetry is improved.

FIG. 76 is a diagram for describing another example of the semiconductor light emitting device according to the present disclosure. A plurality of first branch electrodes 85 and a plurality of second branch electrodes 75 are alternately disposed, and a first electrode ( 80 has protrusions 88 corresponding to each first branch electrode 85, and second electrode 70 has protrusions 88 corresponding to each second branch electrode 75. The number, shape, and position of the first branch electrode 85 and the second branch electrode 75 can be changed according to the size or shape of the semiconductor light emitting element, and the length of the protrusion 88 can be changed.

77 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 78 is a view for explaining an example of a cross section taken along line AA in FIG. 77, wherein the semiconductor light emitting device is a plurality of semiconductors;

Layers

30, 40 and 50, non-conductive reflective film R, first electrode 80, second electrode 70, first

electrical connections

81a and 81b, second

electrical connections

71a and 71b, The first branch electrode 85 and the second branch electrode 75 are included. The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30. ) And an active layer 40 interposed between the second semiconductor layer 50 to generate light by recombination of electrons and holes. The first branch electrode 85 is formed on the second semiconductor layer 50 and the first semiconductor layer 30 to which the active layer 40 is etched and exposed. The second branch electrode 75 is formed on the second semiconductor layer 50. The non-conductive reflective film R is formed on the plurality of semiconductor layers 30, 40, and 50 to cover the first branch electrode 85 and the second branch electrode 75 to reflect light from the active layer 40. . The first electrode 80 and the second electrode 70 are formed apart from each other on the non-conductive reflective film R. The first electrical connection 81a penetrates the non-conductive reflecting film R to electrically communicate the first electrode 80 and the first branch electrode 85, and the first electrical connection 81b is connected to the first electrode 80. ) And the first semiconductor layer 30 are in electrical communication. The second electrical connection 71a penetrates the non-conductive reflecting film R to electrically communicate the second electrode 70 and the second branch electrode 75, and the second

electrical connections

71b and 71c connect the second electrode. 70 and the second semiconductor layer 50 are in electrical communication with each other.

In this example, the first electrode 80 and the second electrode 70 face each other, each having a plurality of corners. The first

electrical connections

81a and 81b are formed at opposite corners of the first electrode 80 in the diagonal direction D11 of the first electrode 80, respectively. Here, the diagonal direction D11 of the first electrode 80 means a diagonal direction of one of the diagonals of the quadrangle when the first electrode 80 is substantially rectangular. The second electrical connection 71a is formed at one of the corners facing each other in the diagonal direction D11 of the second electrode 70, and the second electrical connection 71b is formed slightly apart from the other corners. have. In addition, the second electrical connection part 71c is formed at a corner of another diagonal direction D44 of the second electrode 70. Here, when the second electrode 70 is substantially rectangular, the square may have a diagonal direction D33 and a diagonal direction D44.

In plan view, the first branch electrode 85 extends between two second

electrical connections

71a and 71b located approximately in the diagonal direction D33, towards the second electrical connection 71c located at the other corner. It is curved. The second branch electrode 75 extends between two first

electrical connections

81a and 81b positioned approximately diagonally D11 and is bent toward another corner of the first electrode 80.

The first electrical connection 81a connected to the first branch electrode 85 is located at a corner of the first electrode 80 adjacent to the second electrode 70. Thus, the first branch electrode 85 does not extend unnecessarily long below the first electrode 80, thereby preventing an unnecessary increase in the area of the etching etching. In addition, the second electrical connection 71a connected to the second branch electrode 75 is located at the corner of the second electrode 70 adjacent to the first electrode 80. Therefore, the second branch electrode 75 does not extend unnecessarily long below the second electrode 70, so that light absorption by the metal is reduced.

The configuration of the branch electrode extending between the electrical connections can be applied only to one of the p-side branch electrode and the n-side branch electrode. In this example, both the p-side branch electrode and the n-side branch electrode have such a configuration.

The semiconductor light emitting device according to the present disclosure is similar in width and length, or one of the width and length is longer than the other and is not particularly limited. The semiconductor light emitting device according to the present example is a structure for improving light extraction efficiency, and is particularly effective in a small device.

On the other hand, in the semiconductor light emitting device illustrated in FIGS. 44 and 45, a method of forming a plurality of branch electrodes and extending the branch electrodes along a corner or a magnetic field is generally used for uniformity of current supply or light emission. . However, unlike the conventional method, the semiconductor light emitting device of the present example reduces the number and unnecessary lengths of the branch electrodes, thereby greatly reducing the light absorption loss due to the metal. It made a good composition of form, location and number. The configuration presented in this example can be more effective for devices that are small in size and operate at low current. For example, the plurality of semiconductor layers 30, 40, and 50 have two short edges facing each other and two long edges facing each other. The short side may be smaller than the size 300 μm described in FIG. 45. For example, the short side may be 200 μm or less, and does not exclude more sizes.

To this end, the semiconductor light emitting device according to the present example includes only one first branch electrode 85 and one second branch electrode 75. Here, the provision of only one by one is presented as a good example of a configuration in which the number of branch electrodes is as small as possible, and includes two or more first branch electrodes 85 and / or two or more second branch electrodes 75. This does not mean to exclude the same configuration. In addition, in the present example, since the first semiconductor layer 30 (eg, Si-doped GaN) has better current diffusion than the second semiconductor layer 50 (eg, Mg-doped GaN), the first semiconductor layer 30 is designed in consideration of this. Since the short side is not long, the first branch electrode 85 and the second branch electrode 75 are provided on the long side and the other long side, respectively, to secure a gap between the first branch electrode 85 and the second branch electrode 75. . In addition, since the first branch electrode 85 and the second branch electrode 75 do not extend along the corner or side, the light absorption loss due to the metal is reduced.

The second

electrical connectors

71b and 71c and the first electrical connectors 81b have an island shape when viewed from above, but a small number is formed. Here, the island form means a shape such as a circle, a polygon, and the like, rather than extending to one side like a branch electrode. As such, the limited number of second

electrical connections

71a, 71b, 71c and the first

electrical connections

81a, 81b are provided at a more preferable position for improving the uniformity of the current supply. Second

electrical connectors

71a and 71b are positioned at both sides of the electrode 85, and first

electrical connectors

85a and 85b are positioned at both sides of the second branch electrode 75. Referring to FIG. 77, in the semiconductor light emitting device, since the current spreading degree of the second semiconductor layer 50 is less than that of the first semiconductor layer 30, the number of the second

electrical connectors

71a, 71b, and 71c is determined by the first. More than the number of electrical connections (81a, 81b) can be provided.

The plurality of semiconductor layers 30, 40 and 50 have a substantially rectangular shape and when viewed from above, have long edges facing each other and two short edges facing each other. The second semiconductor layer 50 and the active layer 40 are etched to form an n-contact region 35 through which the first semiconductor layer 30 is exposed. The first branch electrode 85 is formed in the n-contact region 35.

Preferably, the light absorption prevention layer 41 is formed between the second branch electrode 75 and the second electrical connection 71a between the second semiconductor layer 50 and the transparent conductive film 60 using SiO ₂ , TiO _2, or the like. 71b, 71c). The light absorption prevention film 41 may have only a function of reflecting some or all of the light generated in the active layer 40, and is directly below the second branch electrode 75 and the second

electrical connections

71a, 71b, and 71c. The furnace may have only a function of preventing a current from flowing, or may have both functions.

FIG. 79 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, in which the second branch electrode 75 is disposed at approximately the diagonal direction D11 (see FIG. 77) of the first electrode 80. It extends between the first

electrical connections

81a, 81b. The first branch electrode 85 extends along an edge between the first electrode 80 and the second electrode 70 below the corner of the first electrode 80 but does not extend below the second electrode 70. In this manner, the length of the first branch electrode 85 can be made shorter.

80 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. The semiconductor light emitting device has a rectangular shape having two long sides and two short sides when viewed in plan view, and the first electrode 80. ) Is provided on one short side, and the second electrode 70 is provided on the other short side, and the edges facing each other of the first electrode 80 and the second electrode 70 are formed on a rectangular long side. Are formed so as to be diagonal to each other. The first branch electrode 85 is connected to the first electrical connection 81a at the corner of the first electrode 80 closer to the short side where the second electrode 70 is located among the plurality of corners of the first electrode 80. do. The second branch electrode 75 is connected to the second electrical connection 71a at the corner of the second electrode 70 closer to the short side where the first electrode 80 is located among the plurality of corners of the second electrode 70. do.

The first branch electrode 85 extends from under the corner of the first electrode 80 to between the second

electrical connections

71a and 71b formed at the corners of the diagonal D33 of the second electrode 70, respectively. The second branch electrode 75 extends from below the corner of the second electrode 70 to the first

electrical connections

81a and 81b formed at the corners of the diagonal D11 of the first electrode 80, respectively. For example, the second branch electrode 75 includes a first branch 75a and a second branch 75b. The first branch 75a extends along one side of the long side between the first electrode 80 and the second electrode 70. The second branch 75b is bent from the first branch 75a and extends between the first

electrical connections

81a and 81b formed at the corners of the diagonal D11 of the first electrode 80, respectively. The second branch 75b may extend along another diagonal direction D22 of the first electrode 80. The first branch electrode 85 includes a third branch 85a and a fourth branch 85b. The third branch 85a faces the first branch 75a between the first electrode 80 and the second electrode 70 and extends along the other long side. The fourth branch 85b is bent from the third branch 85a and extends between the second

electrical connections

71a and 71b formed at the corners of the diagonal D33 of the second electrode 70, respectively. The fourth branch 85b may extend along another diagonal direction D44 of the second electrode 70. The two first

electrical connections

81a and 81b located in the diagonal direction D11 and the two second

electrical connections

71a and 71b located in the diagonal direction D11 may be positioned at approximately vertices of a quadrilateral shape. . The first branch 75a of the second branch electrode 75 and the third branch 85a of the first branch electrode 85 may be parallel to each other, and the second branch 75b of the second branch electrode 75 may be parallel to each other. And the fourth branch 85b of the first branch electrode 85 may be parallel to each other.

In this example, edges facing each other of the first electrode 80 and the second electrode 70 are formed diagonally with respect to the sides (or edges) of the plurality of semiconductor layers. Thus, some of the corners of the

electrodes

80 and 70 may be located closer to the center than when the opposite edges are parallel or perpendicular to the sides of the plurality of semiconductor layers 30, 40 and 50. Alternatively, one of the corners of the first electrode 80 moves further toward the opposite second electrode 70, and one of the corners of the second electrode 70 moves further toward the opposite first electrode 80. Located. Thus, when

branch electrodes

85 and 75 are formed from the corners closer to the center or further moved to the opposite electrode side, the lengths of the

branch electrodes

85 and 75 can be further reduced by that, and light absorption by metal Can be reduced. In addition, in terms of uniformity of current supply or uniformity of light emission, the space between the

electrical connections

71a, 71b, 71c, 81a, and 81b is further adjusted.

FIG. 81 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. The first branch electrode 85 may include a first electrode 80 and a second electrode under a corner of the first electrode 80. 70, but not below the second electrode 70, the length of the first branch electrode 85 is shorter than the examples described above. In addition, in the case of the first branch electrode 85, which requires mesa etching of the second semiconductor layer 50 and the active layer 40, the active layer due to mesa etching is provided at the edge, edge, or side rather than inside of the device. Reduce the extent of area reduction. Opposite edges of the first electrode 80 and the second electrode 70 are diagonally formed, which causes the first electrical connection 81a and the second electrical connection 71a to be closer to the center of the semiconductor light emitting device. , The length of the

branch electrodes

85, 75 is further reduced.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A central light emitting unit including a plurality of semiconductor layers having an active layer generating light through recombination of the semiconductor light emitting unit; A peripheral light emitting part provided around the central light emitting part, the peripheral light emitting part having a shape different from that of the central light emitting part when viewed in a top view, and a side facing the central light emitting part is formed along the outline of the central light emitting part; Ambient light emitting unit; And a center connection electrode electrically connecting the center light emitting unit and the peripheral light emitting unit.

(2) A semiconductor light emitting device comprising a plurality of peripheral light emitting parts, each peripheral light emitting part having a side facing the central light emitting part and having a side facing another peripheral light emitting part.

(3) The semiconductor light emitting element, characterized in that the side surface of the central light emitting portion is not parallel with other side surfaces of the peripheral light emitting portion other than the side facing the center light emitting portion.

(4) A semiconductor light emitting element, characterized in that the side facing the center light emitting portion is concave.

(5) A semiconductor light emitting element comprising a circular shape on a plan view of a central light emitting unit.

(6) A semiconductor light emitting element, characterized in that the shape on the top view of the central light emitting unit is rectangular.

(7) A semiconductor light emitting element, wherein the shape on the top view of the central light emitting unit is a semicircle.

(8) The edge of the central light emitting part is a semiconductor light emitting element, characterized in that located outside the line connecting the center of the central light emitting portion and the center of the peripheral light emitting portion.

(9) a plurality of central light emitting units; A plurality of peripheral light emitting units around each central light emitting unit; And a peripheral connection electrode electrically connecting neighboring peripheral light emitting parts.

(10) A plurality of peripheral light emitting units are arranged symmetrically with respect to each of the central light emitting units, wherein the plurality of central light emitting units and the plurality of peripheral light emitting units are electrically connected in series.

(11) A semiconductor light emitting element, characterized in that at least one of the center connection electrode and the peripheral connection electrode includes a plurality of connection lines.

(12) A semiconductor light emitting element, wherein the center connection electrode is formed in a diagonal direction from one of the peripheral light emitting parts toward the opposite light emitting part.

(13) The plurality of central light emitting parts include a first central light emitting part and a second central light emitting part, and are in electrical communication with the first semiconductor layer of the peripheral light emitting part of one of the peripheral light emitting parts surrounding the first central light emitting part to be electron and hole A first electrode supplying one of the first electrodes; And a first electrode in electrical communication with a second semiconductor layer of one of the peripheral light emitting parts around the second central light emitting part to supply the other one of electrons and holes. The peripheral light emitting part around the first center light emitting part is electrically connected in series, and the peripheral light emitting part around the second center light emitting part and the second central light emitting part is electrically connected in series, and with one peripheral light emitting part around the first central light emitting part. The peripheral light emitting part of the periphery of the second central light emitting part is electrically connected.

Of course, the number of center light emitting units may be further increased to the third center light emitting unit, the fourth center light emitting unit, and the like.

(14) a reflective layer including a plurality of peripheral light emitting parts, covering the central light emitting part, the peripheral light emitting part, and the center connection electrode and reflecting light generated in the active layer; A first electrode electrically connected to the first semiconductor layer of the plurality of peripheral light emitting parts; A second electrode electrically connected to the second semiconductor layer of the other peripheral light emitting part; And an electrical connection electrically connecting at least one of the first electrode and the second electrode to the plurality of semiconductor layers, wherein at least one of the first electrode and the second electrode is formed on the reflective layer, A semiconductor light emitting device, characterized in that connected to the electrical connection through the reflective layer.

(15) The reflective layer includes: a semiconductor light emitting element comprising one of a distributed Bragg reflector and an omni-directional reflector (ODR).

(16) A semiconductor light emitting device comprising a first light emitting portion and a second light emitting portion formed on a single substrate, wherein the first light emitting portion and the second light emitting portion are respectively: a first semiconductor layer having a first conductivity, and different from the first conductivity; And a plurality of semiconductor layers having a second semiconductor layer having a second conductivity and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes. A first electrode in electrical communication with the first semiconductor layer and supplying one of electrons and holes; A second electrode in electrical communication with a second semiconductor layer of the second light emitting part and supplying the other one of electrons and holes; And an extending type electrode part extending over the second semiconductor layer of the first light emitting part and extending to the side of the first light emitting part, between the first light emitting part and the second light emitting part, and to the side of the second light emitting part; And a connection electrode formed on an edge of the first semiconductor layer of the second light emitting part and connected to the extended electrode part.

(17) A semiconductor light emitting element, characterized in that the point electrode portion has a width greater than or equal to that of the extended electrode portion.

(18) The semiconductor light emitting device according to claim 1, wherein the first electrode and the point electrode are formed on the edge of the first semiconductor layer where the second semiconductor layer and the active layer are etched and exposed.

(19) A semiconductor light emitting element, characterized in that the point electrode portion has one of circular and polygonal shapes.

(20) The edge of the first light emitting part and the edge of the second light emitting part due to the trench for isolating the first light emitting part and the second light emitting part are viewed from the top view. And an oblique line with respect to the other edge of the second light emitting portion.

(21) The extended electrode portion includes: a connecting line formed on the side of the first light emitting portion, between the first light emitting portion and the second light emitting portion, and on the side of the second light emitting portion; And a branch branched from a connection line on the second semiconductor layer of the first light emitting unit.

(22) The edge electrode portion has an edge of the first semiconductor layer exposed by etching the second semiconductor layer and the active layer on the edge side of the second light emitting portion due to a trench for isolating the first light emitting portion and the second light emitting portion. The semiconductor is formed to have a width greater than or equal to that of the extended electrode, and the trench forms oblique lines with respect to the other edges of the first light emitting part and the second light emitting part when viewed in top view. Light emitting element.

(23) The extended electrode portion includes: a connecting line formed on the side of the first light emitting portion, between the first light emitting portion and the second light emitting portion, and on the side of the second light emitting portion; And a branch branched from a connection line on the second semiconductor layer of the first light emitting part, wherein the second electrode comprises: a pad part; And branch portions extending from the pad portion to both sides of the point electrode portion.

(24) a plurality of first light emitting portions and a plurality of second light emitting portions, the first light emitting portion and the second light emitting portion are alternately arranged and connected in series, and the first electrode is a first light emitting portion at one end of the series connection And a second electrode is formed on the second light emitting part of the other end of the series connection, extends over the second semiconductor layer of the second light emitting part, and is located between the side of the second light emitting part, between the second light emitting part and the first light emitting part, and An additional extending type electrode portion extending to the side of the first light emitting portion; And an additional connection electrode formed on an edge of the first semiconductor layer of the first light emitting part, the additional connecting electrode having an additional point type electrode part connected to the additional extended electrode part. .

(25) A plurality of rows in which the first light emitting portion and the second light emitting portion are alternately arranged, and the separation lines of each of the first light emitting portion and each of the second light emitting portions that face each other are each of the first light emitting portion and each of the second light emitting portions. A semiconductor light emitting element, characterized in that formed on an oblique side to the other side.

A reflection layer covering the plurality of semiconductor layers and the connection electrode and reflecting light generated in the active layer, the reflection layer having at least one of the first electrode and the second electrode formed on the reflection layer; And an electrical connection electrically connecting at least one of the first electrode and the second electrode formed on the reflective layer and the plurality of semiconductor layers through the reflective layer.

(27) The reflecting layer includes: a semiconductor light emitting element comprising one of a distributed Bragg reflector and an omni-directional reflector (ODR).

(28) In a semiconductor light emitting device, a first semiconductor layer having a first conductivity, an active layer for generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity are sequentially stacked. A plurality of semiconductor layers comprising: a plurality of semiconductor layers having two long edges facing each other and two short edges facing each other; A first branch electrode extending from one side long edge to the other long edge on the exposed first semiconductor layer with the second semiconductor layer and the active layer removed, and from the other long edge to the one long edge on the second semiconductor layer At least one of the extended second branch electrodes; A non-conductive reflecting film formed to cover the plurality of semiconductor layers, the first branch electrode and the second branch electrode, and reflecting light from the active layer; A first electrode provided on one side of the long edge side to be in electrical communication with the first semiconductor layer and supplying one of electrons and holes; And a second electrode provided at the other long edge side to be in electrical communication with the second semiconductor layer, the second electrode supplying the other one of electrons and holes.

(29) At least one of the first electrode and the second electrode is provided on the opposite side of the plurality of semiconductor layers with respect to the non-conductive reflective film, and is electrically connected to the plurality of semiconductor layers by an electrical connection passing through the reflective layer. The semiconductor light emitting device, characterized in that the flip chip (flip chip) communicated with.

(30) The first electrode and the second electrode are provided on the non-conductive reflective film, and the edges facing each other of the first electrode and the second electrode extend from one short edge toward the other short edge. .

(31) The first electrode and the second electrode are provided on the nonconductive reflecting film, the first branch electrode extends from below the first electrode to the bottom of the second electrode, and the second branch electrode extends from the bottom of the second electrode to the first. A semiconductor light emitting device, characterized in that extending below the electrode.

(32) A plurality of first branch electrodes and a second branch electrode therebetween.

(33) First and second opposing edges of the first electrode and the second electrode extend from one short edge toward the other short edge, penetrate the non-conductive reflective film, and connect the first electrode and the first branch electrode to each other. connect; And a second electrical connection penetrating the non-conductive reflecting film and connecting the second electrode and the second branch electrode to the semiconductor light emitting device.

(34) a first electrical connection provided with a plurality of first electrodes and a plurality of second electrodes spaced apart from each other on the reflective layer, penetrating the non-conductive reflective film, and connecting each first electrode and each first branch electrode; And a second electrical connection penetrating through the non-conductive reflecting film and connecting each second electrode and each second branch electrode to the semiconductor light emitting device.

(35) an additional first electrical connection penetrating the non-conductive reflecting film and not in connection with the first branch electrode, but in electrical communication with the first electrode and the first semiconductor layer; And an additional second electrical connection penetrating the non-conductive reflecting film and not connected to the second branch electrode and electrically communicating with the second electrode and the second semiconductor layer.

A plate having a first conductive portion joined to the first electrode, a second conductive portion joined to the second electrode, and an insulating portion interposed between the first conductive portion and the second conductive portion; And a plate in which the conductive portion and the second conductive portion are exposed up and down.

(37) The first branch electrode extends from the first conductive portion side toward the second conductive portion side, the second branch electrode extends from the second conductive portion side toward the first conductive portion side, and the first electrode and the second electrode. The semiconductor light emitting element according to claim 1, characterized in that the insulating portion.

(38) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer And a plurality of semiconductor layers having an active layer that generates light by recombination of holes; A first electrode part in electrical communication with the first semiconductor layer and supplying one of electrons and holes; A second electrode part in electrical communication with the second semiconductor layer and supplying the other one of electrons and holes; And a nonconductive reflecting film formed over the plurality of semiconductor layers and reflecting light from the active layer, wherein at least one of the first electrode part and the second electrode part comprises: a first upper electrode formed on the nonconductive reflecting film; A first branch electrode extending below the first upper electrode and out of the first upper electrode; A first electrical connection penetrating the non-conductive reflective film and connecting the first upper electrode and the first branch electrode; And a second electrical connection penetrating the non-conductive reflective film and electrically communicating with the first upper electrode and the plurality of semiconductor layers, wherein the second electrical connection is separated from an extension line of the first branch electrode.

(39) The first electrode portion includes: a first upper electrode; A first branch electrode formed on the exposed first semiconductor layer by etching the second semiconductor layer and the active layer; A first electrical connection for electrically connecting the first upper electrode and the first branch electrode; And a second electrical connection electrically connecting the first upper electrode and the first semiconductor layer, wherein the second electrode part comprises: a second upper electrode formed away from the first upper electrode on the non-conductive reflective film; A second branch electrode extending out of the second upper electrode between the second semiconductor layer and the non-conductive reflecting film below the second upper electrode; A third electrical connection penetrating the non-conductive reflective film and connecting the second upper electrode and the second branch electrode; And a fourth electrical connection penetrating the non-conductive reflecting film and electrically communicating the second upper electrode and the second semiconductor layer, but deviating from an extension line of the second branch electrode.

(40) A semiconductor light emitting device comprising only one first branch electrode and one second branch electrode.

(41) The plurality of semiconductor layers have a short edge, the other short side opposite to the short side, a long edge, and the other long side opposite to the long side, and the first upper electrode is provided on the short side, The second upper electrode is provided on the other short side, and the first branch electrode extends under the first upper electrode below the second upper electrode, and the second branch electrode extends under the second upper electrode and below the first upper electrode. And a second electrical connection is located far from the long side and closer to the short side than the first electrical connection, and the fourth electrical connection is located farther from the other side and closer to the other side than the third electrical connection.

(42) At least one of the first branch electrode and the second branch electrode is a semiconductor light emitting element, characterized in that the opposite end of the side connected to the first electrical connection and the third electrical connection is bent.

(43) The semiconductor light emitting device according to claim 1, wherein the first branch electrode is formed only below the first upper electrode adjacent to the second upper electrode and below the second upper electrode adjacent to the first upper electrode.

44. The semiconductor light emitting device according to claim 4, wherein the number of fourth electrical connections is greater than the number of second electrical connections.

(45) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer And a plurality of semiconductor layers including an active layer that generates light by recombination of holes, comprising: a plurality of short edges, another short side opposite to the short side, long edges, and the other long side opposite to the long side; Semiconductor layer; A nonconductive reflecting film formed over the plurality of semiconductor layers and reflecting light from the active layer; A first upper electrode and a second upper electrode formed on the non-conductive reflective film, the first upper electrode provided on the short side and the second upper electrode provided on the other short side; A first electrical connection and a second electrical connection respectively passing through the non-conductive reflecting film to electrically connect the first semiconductor layer and the first upper electrode; wherein the first electrical connection is located farther from the long side than the first electrical connection; Electrical connection and second electrical connection; A third electrical connection and a fourth electrical connection respectively passing through the non-conductive reflecting film to electrically connect the second semiconductor layer and the second upper electrode; wherein the fourth electrical connection is located farther from the other side than the third electrical connection. 3 electrical connections and fourth electrical connections; A first branch electrode connected to the first electrical connection and extending from the bottom of the first upper electrode to the bottom of the first upper electrode on which the second semiconductor layer and the active layer are etched and exposed; And a second branch electrode connected to the third electrical connection and extending from the bottom of the second upper electrode to the bottom of the first upper electrode between the second long side semiconductor layer and the light reflection layer. There is no branch electrode formed between the fourth electrical connection in the direction from the short side to the other short side and the direction from the other short side to the short side.

46. The semiconductor light emitting device of claim 2, wherein the second electrical connection deviates from the extension line of the first branch electrode, and the fourth electrical connection deviates from the extension line of the second branch electrode.

(47) A branch light emitting device comprising only one first branch electrode and one second branch electrode.

(48) The distance between the short sides of the semiconductor light emitting device, characterized in that the second electrical connection is closer than the first electrical connection, the distance from the other short side is the fourth electrical connection is closer than the third electrical connection.

(49) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer for generating light through recombination of and grown using a growth substrate; A nonconductive reflecting film bonded to the plurality of semiconductor layers on the opposite side of the growth substrate; And a first electrode and a second electrode electrically connected to the plurality of semiconductor layers and formed to face each other on the non-conductive reflective film, wherein at least one connection portion connecting the plurality of sub electrodes and the plurality of sub electrodes to each other. The semiconductor light emitting device comprising: a first electrode and a second electrode having a width smaller than that of each sub-electrode connected by each connection part based on a direction perpendicular to the connection direction.

(50) A semiconductor light emitting element according to claim 1, wherein each connecting portion is spaced apart in the orthogonal direction from opposite edges of each sub-electrode facing each other.

(51) A semiconductor light emitting element, wherein both the first electrode and the second electrode have a plurality of sub-electrodes and at least one connection portion.

(52) A semiconductor light emitting element according to claim 1, wherein each sub-electrode has a width larger than that of the connection portion.

(53) A semiconductor light emitting element, wherein regions not covered by the connecting portion between the sub-electrodes are formed on both sides of the connecting portion, respectively.

(54) a first branch electrode electrically connected to the first electrode on the exposed first semiconductor layer with the second semiconductor layer and the active layer removed and extending below the second electrode below the first electrode; And a second branch electrode electrically connected to the second electrode on the second semiconductor layer and extending below the first electrode under the second electrode, wherein the first branch electrode and the second branch electrode are connected to each connection portion. A semiconductor light emitting device, characterized in that provided between the sub-electrodes.

A first branch electrode electrically connected to the first electrode on the exposed first semiconductor layer by removing the second semiconductor layer and the active layer, and extending from the first electrode to the second electrode; And a second branch electrode electrically connected to the second electrode on the second semiconductor layer and extending below the first electrode under the second electrode, wherein the first branch electrode and the second branch electrode are connected to each connection portion. A semiconductor light emitting device, characterized in that extending between the sub-electrodes.

The plurality of semiconductor layers have two long edges facing each other and two short edges facing each other, and the plurality of sub-electrodes of the first electrode have one long edge. And a plurality of sub-electrodes of the second electrode are arranged along the other long edge, and are electrically connected to the first electrode on the exposed first semiconductor layer by removing the second semiconductor layer and the active layer. A first branch electrode extending below the second electrode; And a second branch electrode electrically connected to the second electrode on the second semiconductor layer and extending below the first electrode under the second electrode.

The plurality of semiconductor layers have two long edges facing each other and two short edges facing each other, and the plurality of sub-electrodes of the first electrode have one long edge. And a plurality of sub-electrodes of the second electrode are arranged along the other long edge, and the first branch electrode is electrically connected to the first electrode on the exposed first semiconductor layer by removing the second semiconductor layer and the active layer. A first branch electrode extending between the first electrode and the second electrode without overlapping with the second electrode in a plan view.

(58) A plurality of sub-electrodes are connected by a plurality of connecting portions, wherein the plurality of connecting portions are arranged in a zigzag form.

(59) A semiconductor light emitting element comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer And a plurality of semiconductor layers having an active layer that generates light by recombination of holes; A nonconductive reflecting film formed over the plurality of semiconductor layers to reflect light from the active layer; A first electrode formed on the non-conductive reflecting film and having a pad portion and a protrusion projecting from the pad portion; A second electrode formed on the non-conductive reflecting film and facing the protrusion; A first branch electrode formed on the first semiconductor layer and extending between the first electrode and the second electrode under the protrusion; A first electrical connector penetrating the non-conductive reflective film to connect the protrusion and the first branch electrode; And a second electrical connection part penetrating the non-conductive reflective film to electrically connect the second electrode and the second semiconductor layer.

The first branch electrode may be an n-side branch electrode, or may be a p-side branch electrode.

(60) The second electrode includes: a pad portion and a protrusion protruding from the pad portion between the first electrode and the second electrode, and between the plurality of semiconductor layers and the nonconductive reflecting film, the first electrode under the protrusion of the second electrode. And a second branch electrode extending downward, wherein the second electrical connection unit connects the protrusion of the second electrode and the second branch electrode.

(61) The first branch electrode is formed on the second semiconductor layer and the first semiconductor layer where the active layer is etched and exposed, and does not extend below the pad portion of the first electrode and the second electrode. device.

(62) a second branch electrode connected to the second electrode by a second electrical connection between the plurality of semiconductor layers and the non-conductive reflective film, the second branch electrode extending below the first electrode below the second electrode; Are respectively provided on both sides of the first branch electrode, and each second electrical connection part is positioned adjacent to an edge of the second electrode facing the first electrode.

(63) In plan view, the first electrical connection portion intersects the edge of the pad portion of the first electrode, and the protrusion portion protrudes from the pad portion corresponding to the first electrical connection.

(64) In plan view, the first electrical connection is spaced from the edge of the pad portion of the first electrode to the second electrode side, the protrusion extends from the pad portion of the first electrode toward the second electrode, and then the distal end of the protrusion is A semiconductor light emitting device, characterized in that connected to the first electrical connection.

(65) A semiconductor light emitting element, wherein the second branch electrodes are provided on both sides of the first branch electrode, respectively, and each protrusion is formed from the pad portion of the second electrode in correspondence with each of the second branch electrodes.

(66) a second branch electrode connected to the second electrode by a second electrical connection between the plurality of semiconductor layers and the non-conductive reflecting film and extending below the first electrode below the second electrode. Silver is provided on both sides of the first branch electrode, each second branch electrode is a semiconductor light emitting device, characterized in that the ends are bent toward each other.

A second branch electrode connected to the second electrode by a second electrical connection between the plurality of semiconductor layers and the non-conductive reflective film, the second branch electrode extending below the first electrode below the second electrode; Are respectively provided on both sides of the first branch electrode, and each of the second branch electrodes on both sides of the first branch electrode is connected to each other under at least one of the first electrode and the second electrode.

(68) A semiconductor light emitting device, characterized in that the first branch electrode does not extend under the pad portion of the first electrode and the second branch electrode does not extend under the pad portion of the second electrode.

(69) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an electron interposed between the first semiconductor layer and the second semiconductor layer; And a plurality of semiconductor layers having an active layer that generates light by recombination of holes; A nonconductive reflecting film formed over the plurality of semiconductor layers to reflect light from the active layer; A first electrode and a second electrode formed to be separated from the non-conductive reflecting film; At least one first electrical connection penetrating the non-conductive reflective film to electrically connect the first electrode and the first semiconductor layer; At least one second electrical connection penetrating the non-conductive reflective film to communicate the second electrode and the second semiconductor layer; A first branch electrode formed on the first semiconductor layer to be connected to the at least one first electrical connection portion, the first branch electrode extending between the first electrode and the second electrode from below a corner adjacent to the second electrode of the diagonal corners of the first electrode; 1 electrode; And a second branch electrode formed between the plurality of semiconductor layers and the non-conductive reflecting film so as to be connected to the at least one second electrical connection part, wherein the second branch electrode is formed from below a corner adjacent to the first electrode of the diagonal corners of the second electrode. And a second branch electrode extending toward diagonal corners.

The present disclosure discloses a case where a first branch electrode is an n-side branch electrode, a second branch electrode is a p-side branch electrode, a first branch electrode is a p-side branch electrode, and a second branch electrode is an n-side branch electrode. It includes everything.

(70) The at least one first electrical connection includes two first electrical connections respectively formed at diagonal corners of the first electrode, the second branch electrode being at least below a corner of the second electrode adjacent to the first electrode. The semiconductor light emitting device is connected to one second electrical connection, and extends to pass between the two first electrical connection.

(71) The at least one second electrical connection includes two second electrical connections respectively formed at diagonal corners of the second electrode, the first branch electrode being at least below a corner of the first electrode adjacent to the second electrode. The semiconductor light emitting device of claim 1, wherein the semiconductor light emitting device is connected to one first electrical connection part and extends between the two second electrical connection parts.

(72) The first branch electrode extends near one edge of the plurality of semiconductor layers between the first electrode and the second electrode, and the second branch electrode extends near the other edge of the plurality of semiconductor layers between the first electrode and the second electrode. A semiconductor light emitting device, characterized in that extending from.

(73) A planar view, in which the shape of the first branch electrode is symmetrical with the shape of the second branch electrode with respect to the center between the first electrode and the second electrode.

(74) The semiconductor light emitting device has a rectangular shape having two long sides and two short sides when viewed in plan view, the first electrode is located on one short side, and the second electrode is located on the other short side. And only one first branch electrode and one second branch electrode are formed.

(75) In plan view, the edges facing each other of the first electrode and the second electrode are formed to be inclined or oblique lines with respect to the edges of the plurality of semiconductor layers, respectively, and diagonal corners of the first electrode are shown. Includes a corner closer to the second electrode side and a corner located diagonally to the second electrode side due to the oblique edge of the first electrode, wherein the first branch electrode is closer to the second electrode side of the diagonal corners of the first electrode. A corner connected to the at least one first electrical connection below the corner, wherein the diagonal corners of the second electrode comprise a corner closer to the first electrode side and a corner located diagonally to the first electrode due to the diagonal edge of the second electrode; And the second branch electrode is connected with at least one second electrical connection below a corner closer to the first electrode side of the diagonal corners of the second electrode. A light emitting element.

(76) The at least one first electrical connection includes two first electrical connections respectively formed at diagonal corners of the first electrode, and the at least one second electrical connection is respectively at the diagonal corners of the second electrode. And two second electrical connections formed, wherein the second branch electrode extends to pass between the two first electrical connections.

(77) The second branch electrode includes: a first branch extending from one side edge of the plurality of semiconductor layers between the first electrode and the second electrode; And a second branch that is bent from the first branch and extends between the two first electrical connections, wherein the first branch electrode includes: a third branch extending from the other edge of the plurality of semiconductor layers between the first electrode and the second electrode; ; And a fourth branch, which is bent from the third branch and extends between the two second electrical connections.

(78) The second branch electrode includes: a first branch extending from one side edge of the plurality of semiconductor layers between the first electrode and the second electrode; And a second branch that is bent from the first branch and extends between the two first electrical connections, wherein the first branch electrode includes: a second branch extending from the other edge of the plurality of semiconductor layers between the first electrode and the second electrode; 2. A semiconductor light emitting device, characterized in that it does not extend below the electrode.

According to one semiconductor light emitting device according to the present disclosure, a semiconductor light emitting device having improved luminance is provided.

According to another semiconductor light emitting device according to the present disclosure, a plurality of light emitting parts may be compactly included in a limited area.

According to another semiconductor light emitting device according to the present disclosure, the corners of the light emitting portion are rounded to improve the yield.

According to another semiconductor light emitting device according to the present disclosure, when making a plurality of light emitting portions in an array, by providing a connection electrode consisting of a branch, a connecting line and a point electrode portion, the light emitting area is reduced while achieving sufficient current spreading. There is provided a semiconductor light emitting device which suppresses the above and has a compact arrangement.

According to another semiconductor light emitting device according to the present disclosure, a semiconductor light emitting device having a relatively small n-contact region and having branch electrodes for current diffusion is provided.

According to another semiconductor light emitting device according to the present disclosure, there is provided a semiconductor light emitting device having a branch electrode for current diffusion and having a relatively short length of the branch electrode, thereby reducing light absorption loss.

According to another semiconductor light emitting device according to the present disclosure, a package including a plurality of semiconductor light emitting devices can be compactly formed.

According to another semiconductor light emitting device according to the present disclosure, the light absorption loss due to the metal is reduced.

In addition, in small size devices, a small number of branch electrodes and electrical connections are used to achieve uniformity of current supply and / or light emission.

According to another semiconductor light emitting device according to the present disclosure, damage such as peeling of electrodes due to thermal expansion difference is prevented.

According to another semiconductor light emitting device according to the present disclosure, there is provided a semiconductor light emitting device in which light absorption by metal is reduced and light emission area decreases by mesa etching is reduced.

Claims

In a semiconductor light emitting device,

A plurality of semiconductor layers sequentially stacked with a first semiconductor layer having a first conductivity, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity; A plurality of semiconductor layers having two long edges facing each other and two short edges facing each other;

A first branch electrode extending from one side long edge to the other long edge on the exposed first semiconductor layer with the second semiconductor layer and the active layer removed, and from the other long edge to the one long edge on the second semiconductor layer At least one of the extended second branch electrodes;

A non-conductive reflecting film formed to cover the plurality of semiconductor layers, the first branch electrode and the second branch electrode, and reflecting light from the active layer;

A first electrode provided on one side of the long edge side to be in electrical communication with the first semiconductor layer and supplying one of electrons and holes; And

And a second electrode provided at the other long edge side to be in electrical communication with the second semiconductor layer and supplying the other one of electrons and holes.
The method according to claim 1,

At least one of the first electrode and the second electrode is provided on the opposite side of the plurality of semiconductor layers with respect to the non-conductive reflecting film, and is electrically connected to the plurality of semiconductor layers by an electrical connection passing through the non-conductive reflecting film. A semiconductor light emitting device, characterized in that the communication is a flip chip (flip chip).
The method according to claim 1,

The first electrode and the second electrode are provided on the nonconductive reflecting film,

Edges facing each other of the first electrode and the second electrode extend from one short edge toward the other short edge.
The method according to claim 1,

The first electrode and the second electrode are provided on the nonconductive reflecting film,

The first branch electrode extends from below the first electrode to below the second electrode,

The second branch electrode extends from the bottom of the second electrode to the bottom of the first electrode.
The method according to claim 1,

And a plurality of first branch electrodes and a second branch electrode therebetween.
The method according to claim 4,

Opposing edges of the first electrode and the second electrode extend from one short edge toward the other short edge,

A first electrical connection passing through the non-conductive reflecting film and connecting the first electrode and the first branch electrode; And

And a second electrical connection penetrating the non-conductive reflective film and connecting the second electrode and the second branch electrode.
The method according to claim 5,

A plurality of first electrodes and a plurality of second electrodes are provided apart from each other on the reflective layer,

A first electrical connection passing through the non-conductive reflecting film and connecting each first electrode and each first branch electrode; And

And a second electrical connection penetrating through the non-conductive reflecting film and connecting each second electrode and each second branch electrode.
The method according to claim 7,

An additional first electrical connection penetrating the non-conductive reflecting film and not in communication with the first branch electrode, the first electrical connection electrically communicating with the first electrode and the first semiconductor layer; And

And an additional second electrical connection penetrating the non-conductive reflecting film and not connected to the second branch electrode and electrically communicating with the second electrode and the second semiconductor layer.
The method according to claim 3,

A plate having a first conductive portion joined to the first electrode, a second conductive portion joined to the second electrode, and an insulating portion interposed between the first conductive portion and the second conductive portion; And a plate in which the second conductive portion is exposed up and down.
The method according to claim 9,

The first branch electrode extends from the first conductive portion side toward the second conductive portion side,

The second branch electrode extends from the second conductive portion side toward the first conductive portion side,

The semiconductor light emitting device according to claim 1, wherein the first electrode and the second electrode correspond to the insulating portion.