WO2016015911A1

WO2016015911A1 - Electronic component and method for producing an electronic component

Info

Publication number: WO2016015911A1
Application number: PCT/EP2015/063207
Authority: WO
Inventors: Boris Eichenberg; Georg Bogner; Ralf Staub
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2014-07-28
Filing date: 2015-06-12
Publication date: 2016-02-04
Also published as: DE102014110614A1

Abstract

Disclosed is an electronic component (100) comprising a support element (1) which has, on a mounting side (10), an electrical land comprising at least two electrical connecting elements (11), on which land at least one electronic semiconductor chip (3) is mounted and electrically connected. At least one frame element (2) is mounted on the mounting side (10). Also disclosed are methods for producing electronic components (100).

Description

description

Electronic component and method for producing an electronic component

This patent application claims the priority of German Patent Application 10 2014 110 614.8, the disclosure of which is hereby incorporated by reference.

An electronic component and method for the production of electronic components are specified.

At least one object of certain embodiments is to provide an electronic component. At least another object of certain embodiments is to provide a method for manufacturing an electronic component.

These tasks are governed by an object and by

Method solved according to the independent claims. Advantageous embodiments and further developments of

Subject matter and the procedure are in the dependent

Claims and continue to go from the

following description and the drawings.

According to at least one embodiment, a

electronic component on a support member on which at least one electronic semiconductor chip is mounted. In particular, the carrier element may have an electrical connection surface on the mounting side, on which the at least one electrical semiconductor chip is mounted and electrically connected. According to a further embodiment, the electrical connection surface has at least two electrical connection elements, on which the at least one electronic semiconductor chip is mounted and electrically connected. The electrical connection surfaces can be formed in particular by metal layers. These can be structured in a suitable form so that the at least one electronic semiconductor chip can be mounted and electrically connected. The electrical connection of the at least one

electronic semiconductor chips to the electrical

Connection surfaces can be, for example, by a direct

Assembly of the semiconductor chip on at least one or two of the electrical connection elements,

for example, by soldering or by gluing by means of an electrically conductive adhesive. Furthermore, an electrical connection of the at least one electronic semiconductor chip to at least one of the electrical connection surfaces

alternatively or additionally by means of a bonding contact, so with the help of a bonding wire done. The

Metal layers containing the at least two electrical

Forming connection elements of the electrical connection surface, for example, may include or be made of gold.

Furthermore, the carrier element may have additional contact elements, such as conductor tracks and / or

electrical vias ("vias").

According to a further embodiment, the electronic component has at least one frame element which is mounted on the

Mounting side of the support element is mounted. The

Frame element is in particular a separate component, which is provided individually or in a composite, which can then be divided, before assembly. The composite can be, for example, a wafer composite in which a Frame wafer is provided which has a plurality of contiguous frame elements. In particular, the frame element is not a component which is formed by a molding process on the carrier element or together with the carrier element, as for example in a molding process such as a

Injection molding, transfer molding, compression molding or a similar process would be the case.

According to a further embodiment, the at least one frame element is arranged laterally next to the electronic semiconductor chip. A lateral direction here denotes a direction along the main extension plane of the mounting side of the carrier element. This means that the at least one frame element in a plan view of the mounting side of the support member laterally next to the at least one

electronic semiconductor chip is arranged. In particular, the at least one frame element may be formed such that it does not completely enclose the at least one electronic semiconductor chip in the lateral direction. In other words, this means that the at least one frame element does not form a frame that completely surrounds the semiconductor chip. In this case, apart from at least one side of the at least one electronic semiconductor chip, no part of the at least one frame element is arranged. For example, the at least one frame element in the case of a plan view of the mounting surface may have the shape of a beam, ie a straight shape along a main extension direction, such that the frame element is arranged on one side of the at least one semiconductor chip. Furthermore, the frame element in a supervision of the mounting side

For example, also have an L-like shape, so that the frame member on two sides of the at least one Semiconductor chips can be arranged. In addition, the at least one frame member may also have a C-like shape

have, so that the frame member may be disposed on three sides of the at least one semiconductor chip. Does the electronic component a plurality of

Frame elements, they may also be formed and arranged on the support member, that the at least one electronic semiconductor chip in a lateral direction is not completely from the plurality of frame members

is enclosed.

According to a further embodiment, the at least one frame element is electrically conductive. In other words, this means that the at least one frame element has at least one or more materials that are electrically conductive, so that preferably an electrically conductive connection between two opposite sides of the

Frame element is present through the frame member.

According to a further embodiment, the at least one frame element is mounted on the electrical connection surface. This may mean in particular that the at least one frame element on an electrical connection element

is mounted, so that an electrical connection between the electrical connection surface, in particular the corresponding electrical connection element, and the frame element

is present. As a result, it may be possible with advantage that an electrical contacting of the at least one

Semiconductor chips can be carried through the at least one frame element.

According to a further embodiment, the at least one frame element on a side facing the carrier element a first metallic surface and on the side facing away from the carrier element a second metallic

Surface on. The metallic surfaces can be the same and thus have the same metal. Here and below, "metallic" and "metal" means a single metallic element or even a mixture or alloy of several metallic elements. Particularly preferably, the first metallic surface and the second metallic surface of different metals. In this case, at least one of the metallic surfaces can be formed by a metal layer.

According to a further embodiment, the frame element has a base body, on which at least one metal layer is applied, which forms one of the metallic surfaces. For example, the at least one frame member may comprise a silicon body on which the first and second metallic surfaces are formed by metal layers. In other words, this means that the main body on the first side, the support element

facing side, a first metal layer, which forms the first metallic surface, and on the second, the carrier element facing away from a second metal layer, which forms the second metallic surface. Alternatively, the at least one frame element a

have metallic base body, wherein on at least one side, selected from the carrier element facing side and the side facing away from the carrier element, a

Metal layer is applied. Thus, one of the first metallic surface and the second metallic one

Surface, for example, by a surface of the

metallic body are formed while the other metallic surface of the at least one frame member is formed by a metal layer, which is applied to the metallic base body. As an alternative to this, the metallic main body may also have, as the first and second metallic surfaces, in each case a metal layer applied to the metallic main body. Between the metallic base body and a metal layer applied thereon, which forms a metallic surface, one or more further metal layers may be arranged, which in particular have a diffusion barrier between them

metallic body and the metal layer can form. For this purpose, depending on the choice of materials for the metallic base body and the metal layer, in particular compounds with materials selected from Ni, Ti, W and N are suitable, such as, for example, Ni, Ti, TiW and TiWN.

Especially in the event that the first metallic

Surface and the second metallic surface of the

at least one frame element different from each other

Having metals, the problem can be solved, two different metallization variants on the same

To provide carrier for a semiconductor chip. Such a problem can arise, for example, if for

Mounting individual discrete components, ie in particular of the at least one electronic semiconductor chip, a

certain metallic surface is required while at the same time the external electrical connection of the carrier, a different metallic surface is needed.

For example, for eutectic bonding of individual

discrete components such as the at least one

electronic gold-tin solder may require a gold surface, while at the same time aluminum wires are used for external wiring of the substrate requiring an aluminum surface. at conventional components, this problem is solved in that on the same carrier surface by means of

multiple metallization and corresponding

Structuring steps are provided the corresponding different metal surfaces. A corresponding carrier, which has different metallizations, is about 250% more expensive than a corresponding carrier with only one due to the considerably higher production costs

Metallization variant.

In the electronic component described here, the problem of multiple metallization can be avoided by the at least one frame member. For this purpose, the at least one frame element as the first metallic surface, which faces the carrier element, a metal, for example in the form of a metallization, which are compatible with the carrier element and in particular for electrical

Terminal surface is. The side facing away from the carrier element may have a correspondingly formed second metallic surface corresponding to the second metallization required for external contacting. This can do that

Frame element can be mounted with the same technique on the mounting side of the support member as the at least one electronic semiconductor chip, while the side facing away from the support member of the at least one frame member may have a provided for an external contacting other metallization. As a result, the at least one frame element can form a kind of "rewiring chip" whose use on the carrier element does not require the provision of multiple metallization with complex methods described with the same method as the at least one electronic semiconductor chip can be mounted. This allows

significant cost advantages compared to conventional ones

Multiple metallizations can be achieved. Furthermore, in the event that the side facing away from the carrier element of the at least one frame member is provided for external contacting of the electronic component, a higher compared to the mounting side of the support member contact surface can be provided, which, for example, after casting or embedding of the at least one electronic semiconductor chip with or in a potting material can still be exposed, so no additional

Process steps to expose contact surfaces to

external wiring of the support element must be performed.

To produce the at least one frame element, for example, a frame wafer can be provided, which forms the base body of a plurality of frame elements.

In particular, for example, a silicon wafer or a metal wafer can be provided. On the wafer may be on one or both main surfaces of a metal layer to form a desired metallic surface

be applied. By singulating such a wafer, which optionally has metal layers on one or both main surfaces, a plurality of ones can be used here

described frame elements are produced. The

Separation of the frame wafer into individual frame elements can take place before or after assembly of this on a carrier wafer, so that the frame elements either in one

Wafer composite or can be mounted as individual components. According to a further embodiment, two of the

at least two electrical connection elements each mounted a frame element. In other words, the

electrical connection surface two electrical

Connection elements on and on each of the two electrical connection elements, a frame member is mounted. Here, the electrical connection surface can be even more

Have connecting elements. Thus, the electric

Pad have a first electrical connection element on which a first frame member is mounted, and a second electrical connection element on which a second frame member is mounted. The frame elements can in particular be arranged on the carrier element such that the at least one semiconductor chip is arranged between the frame elements in the lateral direction. In particular, the frame elements can thus be arranged laterally from the at least one electronic semiconductor chip. The frame elements preferably have at least the same height as the semiconductor chip. are on the at least one

electronic semiconductor chip one or more additional layers or elements applied, for example, one or more wavelength conversion layers, so have the

Frame elements preferably have a height which is at least as great as the total height of the semiconductor chip with the additional layers and elements applied thereto. Is between the frame elements and on the at least one semiconductor chip and optionally on another

Layers or elements on the semiconductor chip

are arranged, a potting material arranged so can at a correspondingly high height of the frame members

ensure that the side facing away from the support element of the frame elements is not covered by the potting material and thereby remains contactable. According to another embodiment, each of the frame members is electrically conductive with the respective one

connected electrical connection element on which it is mounted. As a result, each of the frame elements can be used for electrical contacting of the respective underlying electrical connection element in the manner described above. In accordance with at least one further embodiment, the at least one frame element is mounted on the mounting side and in particular on the electrical connection surface by means of soldering, anodic bonding or gluing. For example, in the case of soldering, eutectic soldering may be used.

According to a further embodiment, the carrier element is a silicon carrier. In other words, this means that the carrier element comprises or is made of silicon. In particular, the carrier element can be formed by a silicon substrate, which can be produced by singulation of a carrier wafer in the form of a silicon wafer. Compared to other support materials such as ceramics are

Silicon wafers cheaper and with a larger area

produced. In addition, a silicon carrier, for example in a wafer process, can be metallized on the mounting side in a structured manner by means of well-established methods in order to form electrical connecting surfaces. In addition, silicon offers one for electronic components

sufficient and depending on the application also required low thermal resistance.

According to a further embodiment, the carrier element is a circuit board, such as a printed circuit board ("printed circuit board ") or a ceramic carrier

Board, the carrier element can thus be provided with the electrical connection surface. in case of a

Ceramic carrier, the carrier element, for example

Aluminum nitride, aluminum oxide or another, for

Support substrates have suitable ceramic material or be it.

According to a further embodiment are on the

Connecting surface of the support member has a plurality of

electrical semiconductor chips mounted and electrically

connected. For this purpose, the electrical connection surface may have a suitable number of electrical connection elements, which enables a respectively separate electrical connection or else a series or parallel connection of the plurality of electronic semiconductor chips. In a particularly preferred embodiment, the electrical connection surface is structured in electrical connection elements such that a plurality of electronic

Semiconductor chips through the electrical connection surface in series or in parallel are interconnected. Divided by two

Frame elements which are mounted on mutually electrically separate electrical connection elements, the

Series or parallel connection of the majority of

electronic semiconductor chips are electrically contacted in the manner described above.

According to a further embodiment, the at least one electronic semiconductor chip is optoelectronic

Semiconductor chip formed. This may mean in particular that the electronic semiconductor chip is used as a light-emitting or light-detecting semiconductor chip, ie

LED chip, laser diode chip or photodiode chip, is trained. Furthermore, the at least one electronic semiconductor chip can also be embodied as a purely electronic semiconductor chip and can not fulfill optoelectronic functions. For example, the at least one electronic semiconductor chip in this case as

Power semiconductor, transistor or integrated circuit to be formed. Are more on the support element

electronic semiconductor chips present, they may be the same or different. Furthermore, in addition to one or a plurality of electronic

Semiconductor chips additionally on the support element

Protective element against electrostatic discharges such as an ESD protection diode (ESD: "electrostatic discharge") to be mounted.

According to a further embodiment, a potting material is arranged above the at least one semiconductor chip. In particular, the potting material may be a plastic material that encloses the at least one semiconductor chip and thus protects it against external influences. Furthermore, the potting material can fulfill further or other functions, for example in the case of a light-emitting

Semiconductor chips, a wavelength conversion by a wavelength conversion material contained in the potting material. As described above, the potting material may in particular have a height which is less than or equal to the height of the at least one frame element. are

at least two frame elements on the carrier element

arranged, the potting material is preferably disposed between the frame members and over the at least one semiconductor chip. The potting material can be applied, for example, by casting or injection molding. According to a further embodiment, an optical element is arranged above the at least one semiconductor chip. The optical element may for example be a transparent

Cover, a lens, a diffuser plate, a

Wavelength conversion element or a combination thereof. Particularly preferably, the optical element can be mounted on the at least one frame element.

The at least one frame element and preferably the two frame elements on sides of the electronic component can protect the at least one electronic semiconductor chip and optionally a wiring to the

electrical connection of this. Furthermore, the at least one and preferably the two frame elements as

Contrast agents, for example, in headlight applications such as car headlights, such as a dipped beam used, and also serve as a housing for casting the at least one semiconductor chip. Depending on the required further processing in the system, the at least one

Frame element can be configured with different metallizations or metallic surfaces. In addition, the at least one frame element, as below

described used to attach an optical element or a cover.

According to a further embodiment, in a method for producing an electronic component, a

Plurality of electronic components in one

Composite process made. The features and embodiments described above and below apply

equally for the electronic component as well as the method for producing the electronic component. According to a further embodiment, in a method for producing an electronic component is a

Carrier wafer provided. The carrier wafer may in particular be formed by a plurality of still connected carrier elements. For example, the carrier wafer through a silicon wafer, a ceramic wafer or a

PCB composite be formed. Furthermore, a plurality of connection surfaces can be or are applied to the carrier wafer. This may mean that the carrier wafer, for example in the case of a printed circuit board assembly, is already provided with connection surfaces or, in the case of a silicon or ceramic wafer, is provided with connection surfaces. Each of the pads that intercommunicate

electrically isolated from each other or electrically

can be connected to each other, belongs to a later respective electronic component. On the carrier wafer with the pads, a plurality of frame members can be mounted. These can, as described above, provided as a composite, for example in the form of a frame wafer, or as individual components and on the

Carrier wafers are mounted. Furthermore, at least one electronic semiconductor chip can be mounted on each of the electrical connection surfaces. The assembly of

electronic semiconductor chip is preferably carried out before the carrier wafer is divided to form individual electronic components. To form a plurality of electronic components, the carrier wafer is divided, wherein each of the electronic components has a carrier element, formed from a part of the carrier wafer. Furthermore, each of the isolated electronic components at least one

Frame element on the respective pad on. In the event that the frame members have been applied in the form of a frame wafer in the composite, the cutting of the Frame wafer simultaneously with the division of the carrier wafer.

According to a further embodiment, in a method for producing an electronic component is a

Carrier wafer provided with electrical pads, each having at least two electrical connection elements on a mounting side of the carrier wafer. Per

Pad can have two frame elements so on the

Carrier wafers are mounted on each of the electrical pads respectively on two of the at least two

electrical connection elements in each case a frame element is mounted. Furthermore, at least one electronic semiconductor chip is mounted on each of the electrical connection surfaces. By dividing the carrier wafer, a plurality of electronic components is formed, each of the electronic components a carrier element, formed by a part of the carrier wafer, and on the at least two electrical connection elements of

Connection surface each having a frame element. Such a method can be especially for the case

be advantageous that frame elements are used, which, as described above, have a metallic base body.

According to a further embodiment, a first silicon wafer is provided as carrier wafer for producing an electronic component. By the first silicon wafer, a plurality of not yet isolated

Carrier elements are formed. On the carrier wafer formed by the first silicon wafer, electrical

Pads are applied with at least two electrical connection elements on a mounting side. In particular, it is possible to apply a multiplicity of electrical connection surfaces, which are each a part of an electronic component after a subsequent singulation process. Furthermore, a second silicon wafer is provided as a frame wafer, are introduced into the openings. The openings are arranged such that they at a mounting of the frame wafer forming the second

Silicon wafer on the carrier wafer forming the first

Silicon wafer at least partially over the electrical

Connection surfaces are arranged. In other words, the electrical connection surfaces are at least partially exposed after the mounting of the second silicon wafer on the first silicon wafer due to the openings in the second silicon wafer. The frame wafer is mounted on the carrier wafer. The assembly can be done as described above in connection with the at least one frame element, so for example by soldering, such as eutectic soldering, by anodic bonding or by gluing. On each of the electrical

Terminal surfaces will be at least an electronic one

Semiconductor chip mounted. The mounted on each other

Silicon wafers are divided into a variety of electronic components, each of the electronic

Components comprises a support member which is formed by a part of the carrier wafer forming the first

Silicon wafer, and at least one frame member which is formed by a part of the frame wafer forming second silicon wafer. Particularly preferably, each of the

electronic components on two of the at least two electrical connection elements of the connection surface in each case a frame element, which is formed by a respective part of the second silicon wafer. The assembly of the at least one electronic semiconductor chip can take place before or after the division of the silicon wafers mounted on one another respectively. Preferably, however, an assembly of the electronic semiconductor chips takes place before the cutting in the wafer composite.

According to a further embodiment, before mounting the second frame wafer on the carrier wafer on a surface of the frame wafer, which faces the carrier wafer after assembly, a first metallic surface passes through

Applying a metal layer is formed. Alternatively or additionally, on a surface of the frame wafer, which after assembly of the frame wafer on the carrier wafer the

Carrier wafer is turned away, a second metallic surface are formed by applying a metal layer. The formation of the second metallic surface can in this case take place before or after the division of the wafers mounted on one another.

For example, in so-called "high-power LEDs" or

LED arrays (LED: "light emitting diode"), such as those used in automotive headlamps, are now widely carriers for semiconductor light-emitting chips are used on which to produce necessary properties such as a shutter edge or a homogeneous

Radiating image of other materials in special

Processes must be applied. These processes are often expensive because they must be performed individually per LED array, such as the sticking of a frame or the application of a potting. A cost reduction can here only about the material costs or on the

Process speed to be sought. In the above-described silicon wafer-based method, instead of single carriers and individually adhered frames, the silicon wafers described herein having the advantages described above are used. This makes it possible to use a variety of electronic components in well-controlled processes for the production of suitable packages for semiconductor chips. In addition, this method allows a high process speed.

Bonding techniques common to silicon wafers such as anodic or eutectic bonding

promise a high stability. Intended assembly heights can be maintained extremely precisely by a suitable choice of the first and in particular also of the second silicon wafer. In particular, the thickness of the second

Silicon wafer at the height of at least one

Semiconductor chips included on the

Semiconductor chip further layers to be adjusted. The openings in the second silicon wafer can be formed in a precise manner, for example by etching.

As described above for the at least one frame element, on the main surfaces of the second

Silicon wafer suitable metal layers are applied to form desired metallic surfaces, so that on the one hand a mounting of the second silicon wafer on the first silicon wafer, in particular on the electrical pads, and on the other hand, the provision of a desired surface for later external contacting of the individual electronic components can be made possible. For example, a gold layer or a

gold-containing layer on the first silicon wafer

facing side of the second silicon wafer, while on the opposite side of the second silicon wafer, for example, an aluminum layer can be applied for a later aluminum wire bonding.

As a result, in just a few steps you get a large-scale benefit ("panel") for further processing in the usual backend Processes and thus bypasses the single process of frame gluing.

The weak point with conventional silicon-based

Components that the cycle stability of a solder joint of silicon casings soldered on metal core boards is not particularly high, can be circumvented by the electronic component is glued to a metal heat sink and the electrical connection can be made by wire contacts over the surface of the at least one frame member.

According to another embodiment, the

electronic semiconductor chips before dividing the

Carrier wafer wrapped with a potting material described above.

Further advantages, advantageous embodiments and

Further developments emerge from the following in

Compound described with the figures

Exemplary embodiments.

In the figures: FIGS. 1A and 1B are schematic representations of a

electronic component according to a

Embodiment,

Figures 2A and 2B are schematic representations of

electronic components according to further embodiments, Figures 3A and 3B are schematic representations of frame elements according to others

Embodiments, Figure 4 is a schematic representation of an electronic

Component according to another

Embodiment,

FIGS. 5A to 5C are schematic representations of

Method steps of a method for producing an electronic component according to a further embodiment and

Figures 6A and 6B are schematic representations of

Method steps of a method for producing an electronic component according to a further embodiment.

In the exemplary embodiments and figures, identical, identical or identically acting elements can each be provided with the same reference numerals. The illustrated elements and their proportions with each other are not to be regarded as true to scale, but individual elements, such as layers, components, components and areas, for better representation and / or better understanding may be exaggerated.

FIGS. 1A and 1B are schematic representations of an electronic component 100 according to FIG

Embodiment shown. FIG. 1A shows a

Exploded view, while Figure 1B shows a schematic three-dimensional view of the electronic component 100. The electronic component 100 has a carrier element 1, which on an assembly side 10 an electrical

Pad, formed by electrical connection elements 11, comprising. The carrier element 1 may be, for example, a ceramic carrier or a silicon carrier, on which the electrical connection elements 11 for forming the

electrical connection surface in the form of metal layers are applied. For example, the electrical connection elements 11 may comprise or be one or more layers comprising one or more materials, for example selected from gold, copper and tin, for example a gold layer, a gold-tin layer or a copper layer. Such materials are particularly suitable for the

Mounting electronic semiconductor chips on the electrical connection elements 11 by means of eutectic soldering. Furthermore, it is also possible that the carrier element 1 with the

electrical connection surface through a circuit board like

For example, a printed circuit board is formed.

At least one electronic semiconductor chip 3 is arranged and mounted on the electrical connection surface. In the exemplary embodiment shown, three electronic semiconductor chips 3 are shown purely by way of example, each of which is embodied as light-emitting semiconductor chips and which in operation emit light of an ultraviolet to blue wavelength purely by way of example. For conversion of at least a part of the semiconductor chip 3 in operation

generated light are on this

Wavelength conversion layers 4 applied so that the electronic device 100 can emit mixed-colored light in operation, by the electronic

Semiconductor chips 3 and the wavelength conversion layers 4 generated light is formed. Alternatively, all electronic semiconductor chips 3 or just some of these other optoelectronic semiconductor chips may be, such as

For example, semiconductor laser diode chips or

Photodiode chip. Furthermore, it is also conceivable that

at least one electronic semiconductor chip 3 none

has optoelectronic properties and, for example, as a power semiconductor device, transistor or

integrated circuit is formed. In addition to the electronic semiconductor chips 3, a protective diode chip 5 is provided and mounted on the pad, which protects the electronic semiconductor chips 3 from electrostatic

Protects discharges. For example, the electronic semiconductor chips 3 and the protection diode chip 5 may vary depending on

Materials of the pad of the support member 1 and the pads of the chips are soldered by means of a gold-tin solder. Alternatively, for example, an adhesive bonding with an electrically conductive adhesive is possible. The electrical connection elements 11 of the electrical

Pad are formed such that the

electronic semiconductor chip 3, which are connected to one side directly electrically conductively connected to the electrical connection surface and are electrically contacted via a respective bonding wire on the other side, in series

interconnected with each other. A contact of the

Series connection of the electronic semiconductor chip 3 is through the two outer, in the illustration shown far left and rightmost arranged electrical

Connection elements 11 of the four electrical

isolated electrical trained

Connection elements 11 possible. The protective diode chip 5 is in corresponding manner parallel to the series circuit of

interconnected electronic semiconductor chip 3.

Furthermore, the electronic component has at least one frame element 2. The frame elements 2 are as

formed self-supporting components, which are provided prior to assembly on the carrier element 1 as individual components or in a composite. In the exemplary embodiment shown, the electronic component 100 has two frame elements 2, which are laterally adjacent to the electronic semiconductor chips

are arranged so that the electronic

Semiconductor chips 3 between the two frame elements 2

are located. The frame elements 2 are bar-shaped, so that each of the frame elements in each case faces one side of the electronic semiconductor chip 3. The

Frame elements 2 thus do not form the semiconductor chips 3 completely enclosing frame. In particular, two of the four in the embodiment shown a total of four

electrical connection elements 4 each one of

Frame elements 2 mounted.

The assembly of the frame elements 2 can in particular

the same way as the mounting of the semiconductor chips. 3

take place, so that for the assembly of the semiconductor chips 3 and the frame elements 2 no different processes

must be used. For this purpose, the frame elements 2 facing the carrier element 1, a metallic surface which is suitable in the same way as the

Semiconductor chips 3 to be mounted on the pad. The side facing away from the support member 1 of the frame members 2 also has a metallic surface, which may be different from the carrier element 1 facing metallic surface and in particular for an external electrical contacting of the electronic component 100 is provided. The frame members 2 are electrically conductive and have, for example, a

Silicon basic body or a metallic base body, so that in particular an electrical line between the carrier element 1 facing surface and the

Carrier element 1 facing away from the surface through the respective frame element 2 can be carried out. Thereby and by the mounting of the frame members 2 provided therefor

electrical connection elements 11 may be an electrical

Contacting the electronic component 100 and

in particular of the electronic semiconductor chip 3 via the support element 1 facing away from the surface of the frame elements 2 done. Further features, in particular for the construction and the materials of the frame elements 2, are further down in FIG

Compound described with Figures 3A and 3B.

The frame elements 2 form a kind of "rewiring chips" which, on their surface facing the carrier element 1, are compatible with the electrical connection surface and on the surface facing away from the carrier element 1

Connection technology for electrically contacting the

electronic device 100 are. This makes it possible, as described above in the general part, complex

To replace multiple metallizations of a board by a simple chip-type processing, the significant

Expect cost advantages.

The frame elements 2 may, for example, a height

which is at least as large as the total height of the combination of the semiconductor chips 3 with the wavelength conversion layers 4 arranged thereon

Frame elements 2 serve to protect the semiconductor chips 3 and / or for example also with regard to the light emission of the semiconductor chips 3 form a kind of shutter edge. FIGS. 2A and 2B show further exemplary embodiments of electronic components 100, which in addition to the components and components described above

Potting material 6 have, in which the electronic

Semiconductor chips 3 are embedded. FIG. 2A shows a sectional view through a corresponding one

electronic component 100, from which it can be seen that the frame elements 2 in this embodiment have a greater height than the combination of the semiconductor chips 3 with the wavelength conversion layers 4 arranged thereon. The potting material 6 extends to the

Carrier element 1 facing away from the upper side of the frame members 2, so that they are free of the potting material 6 and thereby the external contact easily accessible, while the semiconductor chips 3 and the

Wavelength conversion layers 4 are completely enveloped. The potting material 6 has, in particular, a plastic material which can be applied, for example, by casting or injection molding and which serves to protect the

Semiconductor chips 3 in the finished electronic component 100 is used. The plastic material of the potting material 6 may contain additional substances and / or materials by which the optical or other properties of the potting material can be adapted in a manner known to those skilled in the art. As an alternative to the exemplary embodiment shown in FIG. 2A, the frame elements 2 may, for example, also have the same height as the combination of the semiconductor chips 3 and the wavelength conversion layers 4, so that the Carrier element 1 facing away from the top

Wavelength conversion layers 4 as well as the

Carrier element 1 facing away from the upper sides of the frame members 2 are not covered by the potting material 6, as in

Embodiment of Figure 2B is shown in a plan view.

The height ratios of the frame elements 2 and the. Described in connection with FIGS. 2A and 2B

Semiconductor chips 3 with the wavelength conversion layers 4 also apply correspondingly to the case in which further or no additional layers are present on the semiconductor chips 3. FIGS. 3A and 3B show exemplary embodiments of FIG

Frame elements 2 shown.

The frame element 2 according to the embodiment of Figure 3A has a base body 20 which comprises or consists of silicon. On the body 20 are metallic

Surfaces 21, 22 formed, wherein the first metallic surface 21 purely by way of example the the support element

facing surface of the frame member 2, while the second metallic surface 22 forms the carrier element facing away from the surface of the frame member 2. The metallic surfaces 21, 22 are shown in FIG

Embodiment formed by metal layers 23, 24, which are formed according to the connection types, as described in connection with Figures 1A and 1B. Thus, the metal layer 23, which is the first metallic

Surface 21 forms, for example, have gold or be of gold, while the second metallic surface 22 is formed by a metal layer 24 with or made of aluminum. For contacting by means of gold bonding wires, a gold-containing layer or a gold layer can, for example, also be applied as the second metal layer 24. The frame element 2 according to the embodiment of Figure 3B, in contrast to the embodiment of Figure 3A has a base body 20 which by a metallic

Body is formed. By way of example only a metal layer 23 is applied to the base body 20, which forms the second metallic surface 22, while the first metallic surface 21 is formed by the metallic base body itself. Alternatively, the first and second metallic surfaces 21, 22 may also be interchanged, or a metal layer may be present to form both metallic surfaces 21, 22. For example, the metallic base body by copper or a

Copper compound may be formed while the metal layer 23 comprises or consists of aluminum. Between the metallic base body 20 and the metal layer 23 further layers, in particular for example as

Diffusion barrier formed layers, be arranged.

In Figure 4, a further embodiment of an electronic component 100 is shown in an exploded view, in addition to those in connection with the

Embodiment of Figures 1A and 1B described

Having components an optical element 7, which on the

Frame elements 2 is mounted. For example, the optical element 7 through a transparent cover plate, a diffuser plate, a wavelength conversion element, a

Lens or a combination thereof may be formed. In addition to an optical element 7, the electronic

Component 100 of the embodiment of Figure 4 a Potting material 6, as described in connection with Figures 2A and 2B, have.

In conjunction with Figures 5A to 5C are

Process steps of a method for producing an electronic component according to an embodiment shown.

As shown in Figure 5A, in a first

Process step, a carrier wafer 8 in the form of a first silicon wafer provided on the electrical

Pads are applied with at least two electrical connection elements 11 on a mounting side. The application of the electrical connection surfaces by means known in the silicon process technology

Measures involving a structured application of

Allow metal layers. For the sake of clarity, only one electrical connection element 11 is provided with a reference symbol. Each of the pads is associated with a later electronic component.

In a further method step, as shown in FIG. 5B, a frame wafer 9 is in the form of a second

Silicon wafer provided. This has openings 90 which, for example, by etching the silicon material of

Frame wafer 9 can be produced. The openings 90 are arranged so that they are in an assembly of the

Frame wafer 9 are arranged on the carrier wafer 8 at least partially over the electrical connection surfaces, so that these after mounting the frame wafer 9 on the

Carrier wafer 8 are at least partially exposed. Such an assembled state is shown in Fig. 5C. The assembly of the frame wafer 9 on the carrier wafer 8 takes place for example by eutectic soldering, anodic bonding or gluing. This can be done on a surface of the

Frame wafer 9, which faces after the assembly of the frame wafer 9 on the carrier wafer 8 to the carrier wafer 8, prior to assembly as described above first metallic

Surface can be formed by applying a metal layer. Furthermore, it is also possible that before or after assembly of the frame wafer 9 on the carrier wafer 8 on the side facing away from the carrier wafer 8 after assembly

Frame wafer 9 a second metallic surface by

Applying a further metal layer is formed.

On the exposed pads with the electrical connection elements 11, electronic semiconductor chips 3 and other components, as in connection with the

previously described figures are mounted.

By jointly dividing the mounted wafers 8, 9, a plurality of electronic components can be formed, as described in connection with the previous embodiments.

If the finished electronic components, a casting material, as described in connection with Figures 2A and 2B, have, the casting with the

Potting material in the wafer composite before dividing done so that all electronic components of the wafer composite can be cast simultaneously with the potting material. In connection with Figures 6A and 6B is another

Method for producing an electronic component described. The later isolated electronic components 100, one of which is purely by way of example with a reference numeral

are made in the form of a benefit 101 ("panel"), as shown in Figure 6A

Carrier wafer 8, for example, a ceramic wafer with a correspondingly applied metallization for formation

electrical pads or a circuit board, such as a printed circuit board, provided on which electronic semiconductor devices and frame elements and other components, for example, as described in connection with the previous embodiments,

be applied. In particular, as described in connection with FIGS. 1A and 1B, in each case one frame element can be mounted on two of the at least two electrical connection elements on each of the electrical connection surfaces.

By dividing the carrier wafer 8 with the on it

Applied components can be a variety of electronic components 100, as in connection with the previous

Embodiments explained, are produced.

If the isolated electronic components 100 have a potting material 6, then they can be cast together in conjunction with the potting material 6. For this purpose, a common border 102 shown in FIG. 6A, for example in the form of a silicone bead around the area corresponding to the later electronic components, can be used

be applied. In the region bounded by the border 102, a potting material 6 can be applied, as shown in FIG. 6B. This makes it possible to encapsulate a variety of electronic components in Individual processes, as practiced in the prior art, to avoid.

The ones described in connection with the figures

Embodiments may, although not explicitly described, that in conjunction with FIGS

described embodiments further or alternative features according to those described in the general part

Have embodiments.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly described in the claims

Claims or embodiments is given.

Claims

claims

1. Electronic component (100) with a carrier element (1), on a mounting side (10) has an electrical connection surface with at least two electrical

Having connecting elements (11), mounted on the at least one electronic semiconductor chip (3) and

is electrically connected, wherein on the mounting side (10) at least one frame element (2) is mounted.

2. The component (100) according to claim 1, wherein the at least one frame element (2) is electrically conductive.

3. The device (100) according to claim 1 or 2, wherein the

at least one frame element (2) does not completely surround the at least one electronic semiconductor chip (3) in the lateral direction.

4. The component (100) according to any one of the preceding claims, wherein the at least one frame element (2) on a the carrier element (1) side facing a first

metallic surface (21) and on the

Carrier element (1) facing away from a second

metallic surface (22).

5. The device (100) according to claim 4, wherein the first

metallic surface and the second metallic

Surface of different metals have.

6. The component (100) according to claim 4 or 5, wherein the

at least one frame element (2) has a base body (20) of silicon on which the metallic Surfaces (21, 22) by metal layers (23, 24) are formed.

7. The device (100) according to claim 4 or 5, wherein the

at least one frame element (2) has a metallic base body (20) and at least one of the first and second metallic surfaces (21, 22) is applied by a metal body (20) applied on the metallic base body (20)

Metal layer (23, 24) is formed.

8. The component (100) according to one of the preceding claims, wherein two of the at least two electrical

Connection elements (11) is mounted in each case a frame element (2) and each of the frame elements (2) is electrically conductively connected to the respective electrical connection element (11) on which it is mounted.

9. The device (100) according to claim 8, wherein over the

at least one semiconductor chip (3) and between the frame elements (2) a potting material (6) is arranged.

10. The component (100) according to one of the preceding claims, wherein the at least one frame element (2) by means of soldering, anodic bonding or gluing on the

Carrier element (1) is mounted.

11. The component (100) according to one of claims 1 to 10,

wherein the carrier element (1) is a silicon carrier.

Component (100) according to one of claims 1 to 10, wherein the carrier element (1) a board or a

Ceramic carrier is. Component (100) according to one of the preceding claims, wherein the connection elements (11) are formed by metal layers.

Component (100) according to one of the preceding claims, wherein the at least one electronic semiconductor chip (3) is an optoelectronic semiconductor chip.

Component (100) according to one of the preceding claims, wherein over the at least one semiconductor chip (3) an optical element (7) is arranged, which is mounted on the at least one frame element (7).

Method for producing an electronic

Device (100) with the steps:

Providing a carrier wafer (8) with electrical connection surfaces, each having at least two electrical connection elements (11) on a mounting side (10) of the carrier wafer (8),

Mounting one frame element (2) on each of two of the at least two electrical connection elements (2) of each of the electrical connection surfaces,

Mounted in each case at least one electronic semiconductor chip (3) on each of the electrical

Pads

Dicing the carrier wafer (8) to form a

A plurality of electronic components (100), each of the electronic components (100)

Carrier element (1), formed by a part of the

Carrier wafer (8), and on two of the at least two electrical connection elements (11) of the pad in each case a frame element (2). Method for producing an electronic

Device (100) with the steps:

Providing a first silicon wafer as

Carrier wafer (8),

Application of electrical connection surfaces, each with at least two electrical connection elements (11) on a mounting side (10) of the carrier wafer (8),

Providing a second silicon wafer as

Frame wafer (9) are introduced into the openings (90), which at least partially over the. When mounting the frame wafer (9) on the carrier wafer (8)

electrical connection surfaces are arranged,

Mounting the frame wafer (9) on the carrier wafer (8), mounting each of at least one electronic semiconductor chip (3) on each of the electrical ones

Pads

Dividing the stacked silicon wafers to form a plurality of electronic components (100), each of the electronic components (100) comprising a carrier element (1) formed by a part of the carrier wafer (8) and two of the at least two electrical connection elements (11 ) of the pad each have a frame member (2) formed by parts of the frame wafer (9).

A method according to claim 17, wherein on a surface of the frame wafer (9), which after assembly of the

Frame wafer (9) on the carrier wafer (8) facing the carrier wafer (8), before mounting a first

metallic surface by applying a

Metal layer is formed. A method according to claim 17 or 18, wherein on a surface of the frame wafer (9) facing away from the first carrier wafer (8) on the carrier wafer (8) after mounting the frame wafer (9), a second metallic surface is formed by applying a metal layer

is trained.

Method according to one of Claims 17 to 19, in which the electronic semiconductor chips (3) are cast with a potting material (6) prior to dicing.