WO2016010378A1 - Procédé de fabrication d'éléments émetteurs de lumière utilisant un processus d'encapsulation sur tranche et élément émetteur de lumière fabriqué par celui-ci - Google Patents

Procédé de fabrication d'éléments émetteurs de lumière utilisant un processus d'encapsulation sur tranche et élément émetteur de lumière fabriqué par celui-ci Download PDF

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Publication number
WO2016010378A1
WO2016010378A1 PCT/KR2015/007400 KR2015007400W WO2016010378A1 WO 2016010378 A1 WO2016010378 A1 WO 2016010378A1 KR 2015007400 W KR2015007400 W KR 2015007400W WO 2016010378 A1 WO2016010378 A1 WO 2016010378A1
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WIPO (PCT)
Prior art keywords
light emitting
emitting device
layer
wavelength conversion
semiconductor structure
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PCT/KR2015/007400
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English (en)
Korean (ko)
Inventor
장종민
이희섭
채종현
서대웅
Original Assignee
서울바이오시스 주식회사
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Publication of WO2016010378A1 publication Critical patent/WO2016010378A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a method of manufacturing a light emitting device for forming a wavelength conversion part including a phosphor using a wafer level package process and a light emitting device manufactured using the same.
  • LEDs Light emitting diodes
  • LEDs are solid state devices that convert electrical energy into light and generally comprise an active layer of one or more semiconductor materials sandwiched between layers doped with opposite conductivity type impurities. When a bias is applied across these doped layers, electrons and holes are injected into the active layer and recombine to generate light.
  • the light emitted from the LED is converted into white light using a phosphor.
  • the phosphor converts some of the blue light emitted from the LED into yellow light, and the yellow light is mixed with the blue light emitted from the LED to realize white light.
  • the light emitting diode is usually finally used as a light emitting diode module.
  • a light emitting diode module generally manufactures a light emitting diode chip having an electrode and is manufactured through a packaging process and a module process.
  • a process technology for forming a wavelength conversion part includes a stencil process, an imprint process, a spin coating process, and a spray process.
  • the wavelength conversion layer is formed on the semiconductor layer, it is difficult to uniformly coat the wavelength conversion portion including the phosphor on the side of the semiconductor layer. Accordingly, the light emitted to the side of the semiconductor layer is emitted to the outside without uniform wavelength conversion. Therefore, it is difficult to realize uniform mixed color light such as white light.
  • the wavelengths of light emitted from each of the individual light emitting diodes divided from a single wafer are different, the amount of phosphor required to make the light emitted from the active layer into white light of the same wavelength is different for each light emitting diode. Therefore, in order to realize the white light having the same wavelength, a process of disposing a wavelength conversion part including different amounts of phosphors in each light emitting diode is required, which requires a lot of process time and cost.
  • An object of the present invention is to provide a light emitting device manufacturing method having a wavelength conversion portion using a wafer level package process.
  • Another object of the present invention is to provide a light emitting device manufacturing method capable of uniformly controlling color coordinates of light emitting devices manufactured by a wafer level package process.
  • Another object of the present invention is to provide a light emitting device manufacturing method capable of uniformly forming the wavelength conversion portion on the side of the nitride-based semiconductor structure.
  • Another object of the present invention is to provide a light emitting device that can be manufactured using a wafer level package process.
  • Another problem to be solved by the present invention is to provide a light emitting device having improved thickness and reliability by having a wavelength conversion portion having a uniform thickness on the side of the nitride-based semiconductor structure.
  • Another object of the present invention is to provide a wavelength converting part including a phosphor on a semiconductor structure, and uniformly form a wavelength converting part on a side of the semiconductor structure, and emit light characteristics of each light emitting diode, for example, light emission.
  • the present invention provides a light emitting device manufacturing method in which the amount of phosphor may be differently included depending on the wavelength, the light emission intensity, and the like, and the manufacturing process is simple.
  • a method of manufacturing a light emitting device includes a nitride based semiconductor including a first semiconductor layer, a second semiconductor layer and an active layer disposed between the first semiconductor layer and the second semiconductor layer on a growth substrate. Forming a structure, forming first metal bumps and second metal bumps on the semiconductor structure, mounting first metal bumps and second metal bumps on a support substrate, and forming the nitride based semiconductor structure. Etching to separate the light emitting regions.
  • the method of manufacturing the light emitting device includes preparing a lens unit having grooves corresponding to the plurality of light emitting regions, and forming a wavelength conversion unit in the grooves of the lens unit.
  • the method of manufacturing the light emitting device includes attaching the lens unit on the light emitting regions such that the wavelength conversion portions respectively correspond to the plurality of light emitting regions.
  • the package process is performed at the wafer level in a form in which the wavelength conversion portion is coated, process efficiency can be improved.
  • the forming of the wavelength converting part may include adjusting the wavelength converting property of the wavelength converting parts formed in the grooves of the lens part based on the optical characteristics of the plurality of light emitting regions.
  • the wavelength conversion characteristic may be adjusted by the thickness of the wavelength conversion portion or the amount of the phosphor contained in the wavelength conversion portion. Through this, it is possible to uniformly control the optical characteristics, such as color coordinates of the light emitting devices manufactured by the wafer level package process.
  • the lens unit and the light emitting regions may be attached to cover the at least a portion of the side surface of the light emitting region with a uniform thickness.
  • the light emitted from the side of the nitride based semiconductor structure can be converted to light having the same wavelength as the light emitted to the upper surface, so that the reliability and light efficiency of the light emitting device can be improved.
  • the manufacturing method may further include forming an adhesive layer on the support substrate before attaching the lens unit.
  • the method may further include forming a reflective layer between the light emitting regions and on the adhesive layer before attaching the lens unit and the light emitting regions.
  • the manufacturing method may further include separating the growth substrate.
  • the manufacturing method may further include forming a roughened surface on the surface of the nitride based semiconductor structure after separating the growth substrate. In this case, the ratio of light totally reflected by the wavelength converter and returned back to the nitride semiconductor structure may be reduced, thereby improving light extraction efficiency.
  • the manufacturing method may further include processing the surface of the lens unit after attaching the lens unit and the light emitting regions. In this case, the ratio of light totally reflected by the lens unit and returned to the wavelength converter is reduced, so that light extraction efficiency may be improved.
  • the manufacturing method may further include the step of removing the support substrate.
  • the manufacturing method may further include dividing the lens unit into individual light emitting device units after removing the support substrate.
  • the manufacturing method may further include forming a heat dissipation pad positioned between the first metal bump and the second metal bump while the first metal bumps and the second metal bumps are formed.
  • the heat dissipation pad may be electrically insulated from the first and second metal bumps.
  • the heat dissipation pad may include a material having high thermal conductivity, and may include, for example, Cu.
  • the light emitting diode may include heat radiation pads to effectively release heat generated during light emission, and may improve lifespan and reliability of a large output flip chip light emitting diode. In addition, it is possible to prevent deterioration of the light emitting diode due to heat generated during light emission.
  • the light emitting device includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.
  • a first metal bump and a second metal bump disposed on one side of the nitride based semiconductor structure and electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, and the first and second metal bumps.
  • a wavelength conversion part disposed on the nitride based semiconductor structure opposite to each other and covering at least a portion of the side surface of the semiconductor structure with a uniform thickness, and a lens part covering the wavelength conversion part. In this case, the light emitted from the side of the nitride based semiconductor structure can be converted into light having the same wavelength, so that the reliability and light efficiency of the light emitting device can be improved.
  • the lens unit may include a groove, and the wavelength conversion unit may be disposed within the groove.
  • the wavelength converter may directly contact the first semiconductor layer.
  • the wavelength conversion part may directly contact the upper side or the side surface of the nitride based semiconductor structure.
  • an adhesive may be disposed between the wavelength converter and the first semiconductor layer.
  • the light emitting device may further include a reflective layer positioned on a side of the nitride based semiconductor structure and in contact with the adhesive. In this case, light emitted to the reflective layer among the light generated in the active layer can be reflected by the reflective layer and emitted in the usable direction, thereby improving the light extraction efficiency.
  • the first semiconductor layer may include a roughened surface. In this case, the ratio of light totally reflected by the wavelength converter and returned back to the nitride semiconductor structure may be reduced, thereby improving light extraction efficiency.
  • the outer surface of the lens portion may include a roughened surface or have a convex shape. In this case, the ratio of light totally reflected by the lens unit and returned to the wavelength converter is reduced, so that light extraction efficiency may be improved.
  • the light emitting device may be a wafer level package in which the first metal bump and the second metal bump protrude downwardly from the wavelength conversion part and the lens part and are exposed to the outside. In this case, it may be mounted on a PCB substrate without a separate support substrate.
  • the light emitting device may further include a reflective layer positioned on a side of the nitride based semiconductor structure and in contact with the wavelength converter and the lens unit. In this case, light emitted to the reflective layer among the light generated in the active layer can be reflected by the reflective layer and emitted in the usable direction, thereby improving the light extraction efficiency.
  • the lens unit may include at least one of glass or plastic.
  • the light emitting device may further include a heat dissipation pad positioned between the first metal bump and the second metal bump.
  • the package process since the package process is performed at the wafer level in a form in which the wavelength conversion portion is coated, process efficiency may be improved.
  • the chips can emit white light of the same wavelength, and the reliability and light efficiency of the light emitting device are improved.
  • 1 to 9 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
  • FIG. 10 is an enlarged view of a nitride based semiconductor structure of a light emitting device according to an embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • FIG. 12 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • FIG. 13 is a cross-sectional view for describing a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • FIG. 14 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • 15 and 16 are cross-sectional views illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • 17 to 24 are cross-sectional views illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • 1 to 9 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
  • a nitride based semiconductor structure 110, a first metal bump 120, and a second metal bump 130 are formed on a growth substrate 100.
  • the growth substrate 100 is not limited as long as it is a substrate capable of growing the nitride based semiconductor structure 110, and may be, for example, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, a silicon substrate, or the like.
  • the growth substrate 110 may be a patterned sapphire substrate (PSS).
  • the nitride-based semiconductor structure 110 may include a first semiconductor layer (eg, 111 of FIG. 10 or 17), a second semiconductor layer (eg, 113 of FIG. 10 or 17), and the first semiconductor layer and the second semiconductor. Active layers (eg, 112 of FIG. 10 or 17) disposed between the layers.
  • the nitride based semiconductor structure 110 may be grown on the growth substrate 100 using a technique such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the first metal bumps 120 and the second metal bumps 130 may be formed on the nitride based semiconductor structure. As shown in FIG. 10, the first metal bumps 120 are electrically connected to the first semiconductor layer 111, and the second metal bumps 130 are electrically connected to the second semiconductor layer 113. The first metal bumps 120 and the second metal bumps 130 are disposed on one side of the nitride based semiconductor structure 110 on the growth substrate 100. As the first and second metal bumps 120 and 130, at least one of Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag, Ni, and Ti may be used, and an alloy thereof may be used. have. The first and second metal bumps 120 and 130 may be formed together in the same process, for example, using photo and etching techniques or lift off techniques.
  • the first metal bumps 120 and the second metal bumps 130 are mounted on the support substrate 140.
  • the support substrate 140 may be an insulating substrate, a conductive substrate, or a PCB substrate.
  • the support substrate 140 may be a sapphire substrate, a glass substrate, a silicon carbide substrate, a silicon substrate, a metal substrate, a ceramic substrate, or the like.
  • the support substrate 140 may be a ceramic substrate including a circuit pattern.
  • the nitride based semiconductor structure 110 is separated into a plurality of light emitting regions A.
  • the nitride based semiconductor structure 110 may be separated using an etching process.
  • Each emission area A includes a first metal bump 120 and a second metal bump 130.
  • the thickness of the growth substrate 100 may be adjusted to be thin.
  • the thickness of the growth substrate 100 may be thinly processed by various methods such as mechanical polishing, wet etching, laser lift off, chemical lift off, and stress lift off.
  • the growth substrate 100 having a thin thickness is separated into a plurality of light emitting regions A together with the nitride based semiconductor structure 110.
  • the growth substrate 100 may be separated from the nitride based semiconductor structure 110 before the nitride based semiconductor structure 110 is separated into the plurality of light emitting regions A.
  • FIG. Growth substrates can be separated using a variety of substrate separation techniques, including laser lift off, chemical lift off, stress lift off.
  • the growth substrate 100 may be separated from the nitride based semiconductor structure by using laser lift-off.
  • the laser may use a KrF excimer laser.
  • an adhesive layer 145 may be formed on the support substrate 140.
  • the adhesive layer 145 may be temporarily bonded, and may be formed by, for example, tape bonding, UV curing bonding, or thermal bonding.
  • the adhesive layer 145 may include an organic material or an organic / inorganic composite material. Through this, the lens unit 200 or the reflective layer 150 may be formed on the adhesive layer 145, and the adhesive layer 145 may be easily removed in the future.
  • a lens unit 200 having grooves H is provided.
  • grooves H corresponding to the plurality of emission regions A may be formed by etching the flat lens unit 200.
  • the lens unit 200 includes at least one of glass or plastic.
  • the lens unit 200 may be etched by wet etching, dry etching, sand blasting, or the like to form a groove H in the substrate 200.
  • the groove H may be formed at a constant height and width.
  • the wavelength converter 210 may be coated to a certain thickness, thereby enabling a stable process, and improving reliability and light efficiency of the manufactured light emitting device.
  • the wavelength converter 210 is formed in the groove H.
  • the wavelength converter 210 may include a phosphor 212 and a resin 211, and the phosphor 212 may be mixed with the resin 211 and randomly or uniformly disposed in the resin 211.
  • the wavelength converter 210 may convert light emitted from the nitride based semiconductor structure 110 into light having a different wavelength. Accordingly, a variety of light may be realized by a combination of light emitted from the nitride based semiconductor structure 110 and light emitted from the wavelength converter 210, and in particular, may implement white light.
  • the resin 211 may include a polymer resin such as an epoxy resin or an acrylic resin, or a silicone resin, and may serve as a matrix for dispersing the phosphor 212.
  • the phosphor may excite the light emitted from the nitride based semiconductor structure 110 and convert it into light having a different wavelength.
  • the phosphor may include various phosphors well known to those skilled in the art, and may include, for example, at least one of garnet type phosphor, aluminate phosphor, sulfide phosphor, oxynitride phosphor, fluoride phosphor, nitride phosphor, and silicate phosphor. Can be. However, the present invention is not limited thereto.
  • the emission characteristics of each emission region A for example, the emission wavelength and the emission intensity are measured and formed in the individual grooves H based on the measured data.
  • the wavelength converter 210 may be adjusted.
  • the amount of the phosphor 212 contained in the wavelength converter 210 may be adjusted to achieve uniform white light by the combination of the light emitting regions A and the wavelength converter 210.
  • the amount of the wavelength converter 210 formed in each groove H may be adjusted to achieve uniform white light by using dotting or dispensing.
  • the amount of the wavelength converter 210 is adjusted to include a larger amount of phosphor in the groove H corresponding to the emission area A having a shorter emission wavelength.
  • a preliminary wavelength conversion portion is formed in each groove H in advance so as to contain a uniform amount of phosphor, and more necessary for each groove H to realize uniform white light based on the measured data.
  • the amount of phosphor 212 can be precisely adjusted by dotting or dispensing. In this case, the precision of the process can be increased.
  • the lens unit 200 is attached to the light emitting regions so that the wavelength converters 210 correspond to the plurality of light emitting regions A, respectively.
  • the lens unit 200 may also be attached to the support substrate 140 by an adhesive layer 145.
  • the wavelength conversion unit 210 may be disposed on at least a portion of the side surface of the nitride based semiconductor structure 110 with a uniform thickness. This improves the reliability and light efficiency of the light emitting device.
  • the support substrate 140 may be separated.
  • the support substrate 140 may be separated by a conventional method such as a mechanical separation method, a separation method using a chemical solution. Accordingly, the first metal bumps 120 and the second metal bumps 130 are exposed to the outside, and the lens unit 200 functions as a support substrate.
  • the lens unit 200 may be cut and divided into a plurality of light emitting devices.
  • the lens unit may be cut by using a blade, a laser, or the like. Accordingly, a plurality of light emitting devices having uniform light emission characteristics such as emission wavelength and light emission intensity are provided by using a nitride semiconductor structure formed from a single wafer.
  • FIGS. 9 and 10 is an enlarged cross-sectional view of a semiconductor structure of a light emitting device according to the present embodiment.
  • the light emitting device according to the present embodiment will be described in more detail with reference to FIGS. 9 and 10.
  • the light emitting device includes a first semiconductor layer 111, a second semiconductor layer 113 disposed on the first semiconductor layer 111, a first semiconductor layer 111, and a second semiconductor layer 111.
  • the nitride based semiconductor structure 110 including the active layer 112 disposed between the semiconductor layers 113 is included.
  • the first metal bumps 120 and the second metal bumps 130 are disposed on one side of the nitride based semiconductor structure 110 and electrically connected to the first semiconductor layer 111 and the second semiconductor layer 113, respectively. do.
  • the wavelength converter 210 is disposed on the nitride based semiconductor structure 110 to face the first metal bump 120 and the second metal bump 130, and covers the side surface of the nitride based semiconductor structure 110.
  • the wavelength converter 210 may directly contact the nitride based semiconductor structure 110.
  • the wavelength converter 210 may directly contact the top or side surfaces of the nitride based semiconductor structure.
  • the lens unit 200 covers the wavelength converter 210.
  • the light emitting device may be a wafer level package in which the first metal bumps 120 and the second metal bumps 130 protrude downwardly from the wavelength converter 210 and the lens unit 200 and are exposed to the outside. In this case, the light emitted from the side of the nitride based semiconductor structure can be converted into light having the same wavelength, so that the reliability and light efficiency of the light emitting device can be improved.
  • the first metal bumps 120 may be disposed on the first semiconductor layer, and the second metal bumps 130 may be disposed on the second semiconductor layer.
  • a heat dissipation pad 170 may be further formed between the first metal bumps 120 and the second metal bumps 130 .
  • the heat dissipation pad may be electrically insulated from the first and second metal bumps 120 and 130.
  • the heat dissipation pad may include a material having high thermal conductivity, and may include, for example, Cu.
  • the light emitting device can effectively release heat generated during light emission by including a heat dissipation pad, and can improve the lifespan and reliability of a large output flip chip light emitting device. In addition, it is possible to prevent deterioration of the light emitting diode due to heat generated during light emission.
  • the heat dissipation pad 170 may be formed together while forming the first metal bump and the second metal bump.
  • FIG. 11 (a), (b) and (c) are cross-sectional views illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • the manufacturing method of the light emitting device according to the present embodiment is similar to the manufacturing method of the light emitting device described with reference to FIGS. 1 to 9 in that the reflective layer 150 is formed on a part of the side surface of the nitride-based semiconductor structure 110 and in contact with the wavelength conversion portion and the lens portion before attaching the light emitting region A).
  • the reflective layer 150 is formed on a part of the side surface of the nitride-based semiconductor structure 110 and in contact with the wavelength conversion portion and the lens portion before attaching the light emitting region A).
  • the reflective layer 150 is formed on the adhesive layer between the semiconductor structures.
  • the reflective layer 150 may include a material having high reflectivity, for example, Ag.
  • the lens portion 200 and the reflective layer 150 are cut together to form a portion in FIG. 11 (c). It may be divided into a light emitting device as shown. Since the light emitting device further includes a reflective layer 150, light emitted from the active layer to the reflective layer may be reflected from the reflective layer and emitted in an available direction, thereby improving light extraction efficiency.
  • the reflective layer 150 may cover a portion of the side surface of the semiconductor structure, as shown in FIGS. 11A, 11B, and 3C.
  • 12A, 12B, and 12C are cross-sectional views illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • FIGS. 12A, 12B, and 12C the method of manufacturing the light emitting device according to the present embodiment may be described with reference to FIGS. 11A, 11B, and 11C. Similar to
  • the reflective layer 150 covers the whole of the semiconductor structure side surface. Since the reflective layer 150 covers the entire semiconductor structure 110, light loss may be further reduced.
  • FIG. 13 is a cross-sectional view for describing a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • the light emitting device manufacturing method according to the present embodiment is similar to the light emitting device manufacturing method described with reference to FIGS. 1 to 9, but before attaching the lens unit 200 and the light emitting region A, the nitride-based semiconductor structure 110 is provided. There is a difference in that the reflective layer 150 may be formed on a portion of the side surface of (a of FIG. 13). In order to avoid duplicate explanation, the following will mainly describe the difference.
  • the reflective layer 150 may include a material having high reflectivity, for example, Ag. Since the light emitting device further includes a reflective layer 150, the light emission efficiency may be improved.
  • an adhesive 160 may be formed on the reflective layer 150 and the nitride based semiconductor structure 110 before attaching the lens unit 200 and the light emitting region A (FIG. 13A).
  • the adhesive 160 may be thermally stable and have excellent optical properties by using a product having good optical transmittance and heat resistance properties. For example, SOG, BCB, etc. can be used.
  • the reflective layer 150 and the nitride based semiconductor structure 110 may be adhered to the wavelength converter 210 and the lens unit 200 through the adhesive 160.
  • the lens part 200, the adhesive 160, and the reflective layer 150 are cut together to form a plurality of lenses. It can be divided into light emitting elements (Fig. 13C).
  • FIG. 14 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • the light emitting device manufacturing method according to the present embodiment is similar to the light emitting device manufacturing method described with reference to FIGS. 1 to 9, except that a rough surface is formed on the surface of the nitride based semiconductor structure 110. In order to avoid duplicate explanation, the following will mainly describe the difference.
  • a roughened surface R may be formed on the surface of the first semiconductor layer 110 (FIG. 14A).
  • the roughened surface R may be formed using an etching method including at least one of dry etching or wet etching.
  • the rough surface R may be formed by wet etching using a solution including at least one of KOH and NaOH, or PEC etching may be used.
  • the rough surface R may be formed by combining dry etching and wet etching.
  • the above-described methods for forming the roughened surface R are examples, and the roughened surface R may be formed on the surface of the nitride based semiconductor structure using various methods known to those skilled in the art.
  • the lens unit 200 may be cut and divided into a plurality of light emitting devices (b of FIG. 14).
  • the ratio of light totally reflected by the wavelength converter and returned to the nitride-based semiconductor structure is reduced, so that light extraction efficiency may be improved.
  • 15 and 16 are cross-sectional views illustrating a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • the light emitting device manufacturing method is similar to the light emitting device manufacturing method described with reference to FIGS. 1 to 9, but after attaching the lens unit 200 and the light emitting regions A, the lens unit 200 is attached. It may further comprise processing the surface of the.
  • the outer surface of the lens unit 200 may be formed to include a roughened surface L (FIG. 15A).
  • the outer surface of the lens unit 200 may be formed to include a dome shape (FIG. 16A).
  • the lens unit 200 may be cut and divided into a plurality of light emitting devices (b of FIG. 15 and b of FIG. 16).
  • the ratio of light totally reflected by the lens unit and returned to the wavelength converter is reduced, so that light extraction efficiency may be improved.
  • FIGS. 17 to 24 are diagrams for describing a method of manufacturing a light emitting device according to still another embodiment of the present invention.
  • (a) is a sectional view taken along a sectional line B-B of (b).
  • the light emitting device manufacturing method according to the present embodiment is similar to the light emitting device manufacturing method described with reference to FIGS. 1 to 9, but includes a reflective electrode 165, a lower insulating layer 181, a current dispersion layer 180, and an upper insulating layer. There is a difference in that 182 is formed. In order to avoid duplicate explanation, the following will mainly describe the difference.
  • a first semiconductor layer 111 is formed on a growth substrate 100, and a plurality of mesas M spaced apart from each other are formed on the first semiconductor layer 111.
  • the plurality of mesas M may include an active layer 112 and a second semiconductor layer 113, respectively.
  • the active layer 112 is positioned between the first semiconductor layer 111 and the second semiconductor layer 113.
  • reflective electrodes 30 are positioned on the plurality of mesas M, respectively.
  • the plurality of mesas M may form a nitride based semiconductor structure 110 including a first semiconductor layer 111, an active layer 112, and a second semiconductor layer 113 on a growth substrate 100. After growing by using a growth method, the second semiconductor layer 113 and the active layer 112 may be formed by patterning the first semiconductor layer 111. Sides of the plurality of mesas M may be formed to be inclined by using a technique such as photoresist reflow. The inclined profile of the mesa (M) side improves the extraction efficiency of the light generated in the active layer 112.
  • the plurality of mesas M may have an elongated shape extending in parallel to each other in one direction as shown. This shape simplifies forming a plurality of mesas M of the same shape in the plurality of chip regions on the growth substrate 100.
  • the reflective electrodes 165 may be formed on each mesa M after the plurality of mesas M are formed, but is not limited thereto.
  • the second semiconductor layer 113 may be grown and mesa (M). It may be previously formed on the second semiconductor layer 113 before forming the M).
  • the reflective electrode 165 covers most of the upper surface of the mesa M, and has a shape substantially the same as the planar shape of the mesa M.
  • the reflective electrodes 165 may include a reflective layer 161, and may further include a barrier layer 162, and the barrier layer 162 may cover the top and side surfaces of the reflective layer 161.
  • the barrier layer 162 may be formed to cover the top and side surfaces of the reflective layer 161.
  • the reflective layer 161 may be formed by depositing and patterning an Ag, Ag alloy, Ni / Ag, NiZn / Ag, or TiO / Ag layer.
  • the barrier layer 29 may be formed of Ni, Cr, Ti, Pt, or a composite layer thereof to prevent diffusion or contamination of the metal material of the reflective layer.
  • edges of the first semiconductor layer 111 may also be etched. Accordingly, the top surface of the growth substrate 100 may be exposed. Side surfaces of the first semiconductor layer 111 may also be formed to be inclined.
  • the plurality of mesas M may be formed to be located within the upper region of the first semiconductor layer 111. That is, the plurality of mesas M may be located in an island shape on the upper region of the first semiconductor layer 111.
  • mesas M extending in one direction may be formed to reach the upper edge of the first semiconductor layer 111. That is, the one side edge of the bottom surface of the plurality of mesas M coincides with the one side edge of the first semiconductor layer 111. Accordingly, the upper surface of the first semiconductor layer 111 is partitioned by the plurality of mesas (M).
  • a lower insulating layer 181 covering the plurality of mesas M and the first semiconductor layer 111 is formed.
  • the lower insulating layer 181 has openings 181a and 181b for allowing electrical connection to the first semiconductor layer 111 and the second semiconductor layer 113 in a specific region.
  • the lower insulating layer 181 may have openings 181a exposing the first semiconductor layer 111 and openings 181b exposing the reflective electrodes 165.
  • the openings 181a may be positioned near the edge between the mesas M and the edge of the growth substrate 100, and may have an elongated shape extending along the mesas M.
  • the openings 181b are limited to the upper portion of the mesas M, and are located on the same end side of the mesas.
  • the lower insulating layer 181 may be formed of an oxide film such as SiO 2, a nitride film such as SiNx, or an insulating film of MgF 2 using a technique such as chemical vapor deposition (CVD).
  • the lower insulating layer 31 may be formed as a single layer, but is not limited thereto and may be formed as a multilayer.
  • the lower insulating layer 181 may be formed of a distributed Bragg reflector (DBR) in which a low refractive material layer and a high refractive material layer are alternately stacked.
  • DBR distributed Bragg reflector
  • an insulating reflective layer with high reflectance can be formed by stacking layers such as SiO2 / TiO2 or SiO2 / Nb2O5.
  • a current spreading layer 180 is formed on the lower insulating layer 181.
  • the current spreading layer 180 covers the plurality of mesas M and the first semiconductor layer 111.
  • the current spreading layer 180 has openings 180a positioned in the upper region of each mesa M and exposing the reflective electrodes.
  • the current spreading layer 180 may be in ohmic contact with the first semiconductor layer 111 through the openings 181a of the lower insulating layer 31.
  • the current spreading layer 180 is insulated from the plurality of mesas M and the reflective electrodes 165 by the lower insulating layer 181.
  • the openings 180a of the current spreading layer 180 have a larger area than the openings 181b of the lower insulating layer 31, respectively, to prevent the current spreading layer 180 from connecting to the reflective electrodes 165. Has Thus, sidewalls of the openings 180a are positioned on the lower insulating layer 181.
  • the current spreading layer 180 is formed over almost the entire area of the growth substrate 100 except for the openings 180a. Therefore, the current may be easily distributed through the current spreading layer 180.
  • the current spreading layer 180 may include a high reflective metal layer such as an Al layer, and the high reflective metal layer may be formed on a bonding layer such as Ti, Cr, or Ni.
  • a protective layer of a single layer or a composite layer structure such as Ni, Cr, Au, etc. may be formed on the highly reflective metal layer.
  • the current spreading layer 180 may have, for example, a multilayer structure of Ti / Al / Ti / Ni / Au.
  • an upper insulating layer 182 is formed on the current spreading layer 180.
  • the upper insulating layer 182 has openings 182a exposing the current spreading layer 180 and openings 182b exposing the reflective electrodes 165.
  • the opening 182a may have an elongated shape in a direction perpendicular to the longitudinal direction of the mesa M, and has a relatively large area compared to the openings 182b.
  • the openings 182b expose the reflective electrodes 165 exposed through the openings 180a of the current spreading layer 180 and the openings 181b of the lower insulating layer 181.
  • the openings 35b may have a smaller area than the openings 180a of the current spreading layer 180, and may have a larger area than the openings 181b of the lower insulating layer 181. Accordingly, sidewalls of the openings 180a of the current spreading layer 180 may be covered by the upper insulating layer 182.
  • the upper insulating layer 182 may be formed using an oxide insulating layer, a nitride insulating layer, or a polymer such as polyimide, teflon, parylene, or the like.
  • a first metal bump 120 and a second metal bump 130 are formed on the upper insulating layer 182.
  • the first metal bump 120 is connected to the current spreading layer 180 through the opening 182a of the upper insulating layer 182, and the second metal bump 130 is the openings 182b of the upper insulating layer 182. Is connected to the reflective electrodes 165 through.
  • the first metal bumps 120 and the second metal bumps 130 may be used as pads for connecting or bumps for mounting the light emitting device on a submount, package, or printed circuit board.
  • the first and second metal bumps 120 and 130 may be formed together in the same process, for example, using photo and etching techniques or lift off techniques.
  • the first and second metal bumps 120 and 130 may include, for example, a bonding layer such as Ti, Cr, or Ni, and a highly conductive metal layer such as Al, Cu, Ag, or Au.
  • a heat dissipation pad 170 may be additionally formed in addition to the first metal bumps 120 and the second metal bumps 130.
  • the heat dissipation pad 170 may be formed together while forming the first metal bump and the second metal bump.
  • the heat dissipation pad may be positioned on the upper insulating layer 182 to be electrically insulated from the nitride based semiconductor structure 110.
  • the heat dissipation pad may be positioned between the first and second metal bumps 120 and 130 and may be electrically insulated.
  • the heat dissipation pad may include a material having high thermal conductivity, and may include, for example, Cu.
  • the light emitting diode may include heat radiation pads to effectively release heat generated during light emission, and may improve lifespan and reliability of a large output flip chip light emitting diode. In addition, it is possible to prevent deterioration of the light emitting diode due to heat generated during light emission. In addition, since the heat radiation pad is positioned on the upper insulating layer 182 to be insulated from the nitride based semiconductor structure 110, electrical problems (eg, shorts) that may be caused by the heat radiation pad may be prevented.
  • a plurality of light emitting elements as shown in FIG. 24 are manufactured through the process as described with reference to FIGS. 2 to 9.
  • the first metal bumps 120 and the second metal bumps 130 are mounted on the support substrate 140, and the nitride-based semiconductor structure 110, the upper insulating layer 182, and the current spreading layer 180 are etched.
  • the light emitting regions A are separated into a plurality of light emitting regions A, and each light emitting region A includes a first metal bump 120 and a second metal bump 130.
  • an adhesive layer 145 is formed on the support substrate 140.
  • the lens unit 200 having the grooves H corresponding to the plurality of emission regions A is prepared, and the wavelength conversion unit 210 is formed in the grooves H of the lens unit 200. .
  • the support substrate 140 is separated.
  • the light emission wavelength and the light intensity of the plurality of light emitting regions A are measured before forming the wavelength converting portion, and the wavelength converting portion is adjusted according to the light characteristics of the plurality of light emitting regions A.
  • the lens unit 200 is cut and divided into a plurality of light emitting devices, whereby a plurality of light emitting devices having uniform light emission characteristics are provided using a nitride semiconductor structure formed from a single wafer.
  • the light emitting device may include a nitride based semiconductor structure 110 including a first semiconductor layer 111, mesas M, reflective electrodes 30, and a current spreading layer 180, a lower insulating layer 181, The upper insulating layer 182, the first metal bumps 120, and the second metal bumps 130 may be included.
  • the first semiconductor layer 111 is continuous and a plurality of mesas M are spaced apart from each other on the first semiconductor layer 111.
  • the mesas M include the active layer 112 and the second semiconductor layer 113 as described with reference to FIG. 17 and have an elongated shape extending toward one side.
  • the mesas M may be a stacked structure of a gallium nitride compound semiconductor. As illustrated in FIG. 17, the mesas M may be limitedly positioned in an upper region of the first semiconductor layer 111. In contrast, the mesas M may extend to one edge of the upper surface of the first semiconductor layer 111 in one direction, as shown in FIG. 18, and thus the upper portion of the first semiconductor layer 111.
  • the face can be partitioned into a plurality of regions. Accordingly, it is possible to alleviate the concentration of current near the edge of the mesas (M) to further enhance the current distribution performance.
  • Each of the reflective electrodes 165 is disposed on the plurality of mesas M to make ohmic contact with the second semiconductor layer 113.
  • the reflective electrodes 165 may include the reflective layer 161 and the barrier layer 162 as described with reference to FIG. 17, and the barrier layer 162 may cover the top and side surfaces of the reflective layer 161.
  • the current spreading layer 180 covers the plurality of mesas M and the first semiconductor layer 111.
  • the current spreading layer 180 has openings 180a positioned in the upper region of each mesa M and exposing the reflective electrodes 165.
  • the current spreading layer 180 is also in ohmic contact with the first semiconductor layer 111 and insulated from the plurality of mesas M.
  • the current spreading layer 180 may include a reflective metal such as Al.
  • the current spreading layer 180 may be insulated from the plurality of mesas M by the lower insulating layer 181.
  • the lower insulating layer 181 may be positioned between the plurality of mesas M and the current spreading layer 180 to insulate the current spreading layer 180 from the plurality of mesas M.
  • FIG. the lower insulating layer 181 may have openings 181b positioned in upper regions of the mesas M to expose the reflective electrodes 165, and expose the first semiconductor layer 111. May have openings 181a.
  • the current spreading layer 180 may be connected to the first semiconductor layer 111 through openings 181a.
  • the openings 181b of the lower insulating layer 31 have a smaller area than the openings 180a of the current spreading layer 180, and are all exposed by the openings 180a.
  • the upper insulating layer 182 covers at least a portion of the current spreading layer 180.
  • the upper insulating layer 182 has openings 182b exposing the reflective electrodes 165.
  • the upper insulating layer 182 may have an opening 182a exposing the current spreading layer 180.
  • the upper insulating layer 182 may cover sidewalls of the openings 180a of the current spreading layer 180.
  • the first metal bump 120 may be positioned on the current spreading layer 180, and may be connected to the current spreading layer 180 through, for example, an opening 182a of the upper insulating layer 182.
  • the second metal bumps 130 are connected to the reflective electrodes 165 exposed through the openings 182b.
  • the current spreading layer 180 covers almost the entire area of the mesas M and the first semiconductor layer 111 between the mesas M. Therefore, the current can be easily distributed through the current spreading layer 180.
  • the current spreading layer 180 includes a reflecting metal layer such as Al, or the lower insulating layer 181 is formed as an insulating reflecting layer so that the light that is not reflected by the reflecting electrodes 165 is reflected by the current spreading layer 180.
  • the light may be reflected by using the lower insulating layer 181 to improve light extraction efficiency.
  • the wavelength converter 210 is disposed on the nitride-based semiconductor structure 110 to face the first metal bump 120 and the second metal bump 130, and the wavelength converter 210 is formed of the nitride-based semiconductor structure 110. Cover the side.
  • the lens unit 200 covers the wavelength converter 210.
  • the light emitting device may be a wafer level package in which the first metal bumps 120 and the second metal bumps 130 protrude downwardly from the wavelength converter 210 and the lens unit 200 and are exposed to the outside. In this case, the light emitted from the side of the nitride based semiconductor structure can be converted into light having the same wavelength, so that the reliability and light efficiency of the light emitting device can be improved.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'éléments émetteurs de lumière, auxquels est appliqué un processus d'encapsulation sur tranche, et un élément émetteur de lumière fabriqué par celui-ci. L'élément émetteur de lumière comporte une structure semiconductrice à base de nitrure, des premier et deuxième plots métalliques, une unité de conversion de longueur d'onde et une unité de lentille, et les premier et deuxième plots métalliques dépassent vers le bas en comparaison de l'unité de conversion de longueur d'onde et de l'unité de lentille. D'après l'élément émetteur de lumière de la présente invention, des puces peuvent émettre une lumière blanche de la même longueur d'onde, et la fiabilité et le rendement optique de l'élément émetteur de lumière sont améliorés.
PCT/KR2015/007400 2014-07-18 2015-07-16 Procédé de fabrication d'éléments émetteurs de lumière utilisant un processus d'encapsulation sur tranche et élément émetteur de lumière fabriqué par celui-ci WO2016010378A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0091292 2014-07-18
KR1020140091292A KR20160010206A (ko) 2014-07-18 2014-07-18 웨이퍼 레벨 패키지 공정을 이용한 발광 소자 제조 방법 및 그것에 의해 제조된 발광 소자

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WO2016010378A1 true WO2016010378A1 (fr) 2016-01-21

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070045653A1 (en) * 2002-09-27 2007-03-01 Krames Michael R Selective filtering of wavelength-converted semiconductor light emitting devices
KR20120032899A (ko) * 2010-09-29 2012-04-06 삼성엘이디 주식회사 Ｌｅｄ 패키지 및 그 제조방법
KR20130062771A (ko) * 2011-12-05 2013-06-13 엘지이노텍 주식회사 발광소자 어레이
KR20130114745A (ko) * 2011-04-28 2013-10-17 가부시키가이샤 아사히 러버 렌즈 부착 광반도체 장치 및 그 제조방법
EP2537190B1 (fr) * 2010-02-16 2014-05-07 Koninklijke Philips N.V. Dispositif électroluminescent avec couche de conversion de longueur d'onde moulée

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070045653A1 (en) * 2002-09-27 2007-03-01 Krames Michael R Selective filtering of wavelength-converted semiconductor light emitting devices
EP2537190B1 (fr) * 2010-02-16 2014-05-07 Koninklijke Philips N.V. Dispositif électroluminescent avec couche de conversion de longueur d'onde moulée
KR20120032899A (ko) * 2010-09-29 2012-04-06 삼성엘이디 주식회사 Ｌｅｄ 패키지 및 그 제조방법
KR20130114745A (ko) * 2011-04-28 2013-10-17 가부시키가이샤 아사히 러버 렌즈 부착 광반도체 장치 및 그 제조방법
KR20130062771A (ko) * 2011-12-05 2013-06-13 엘지이노텍 주식회사 발광소자 어레이

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