WO2016008367A1 - Pompe à arc électrique à vide poussé et unité d'extraction d'air de celle-ci - Google Patents

Pompe à arc électrique à vide poussé et unité d'extraction d'air de celle-ci Download PDF

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Publication number
WO2016008367A1
WO2016008367A1 PCT/CN2015/083276 CN2015083276W WO2016008367A1 WO 2016008367 A1 WO2016008367 A1 WO 2016008367A1 CN 2015083276 W CN2015083276 W CN 2015083276W WO 2016008367 A1 WO2016008367 A1 WO 2016008367A1
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Prior art keywords
pump
vacuum
high vacuum
chamber
arc
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PCT/CN2015/083276
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English (en)
Chinese (zh)
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储继国
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储继国
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Publication of WO2016008367A1 publication Critical patent/WO2016008367A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
    • F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum

Definitions

  • the invention belongs to the technical field of vacuum acquisition, and in particular relates to a high vacuum arc pump and an air extraction unit thereof.
  • Patent 201210170072.1 (a pumping system and process)
  • Patent 201310241954.7 vacuum furnace pumping system and its pumping process
  • Patent 201310242244.6 (evaporation coating equipment and its pumping process)
  • Patent 201310241939.2 plasma coating equipment and its pumping process
  • the above four patents propose an arc pump that uses chemical discharge to extract gas by arc discharge (usually using titanium as an adsorbent), as well as its pumping unit, pumping process and typical applications.
  • the arc titanium pump has a large pumping speed (easy to obtain tens of thousands of L / s large pumping speed), low energy consumption (about 1/3 of the conventional diffusion pump), quick start (a few seconds to a few minutes), no oil vapor pollution Significantly improve the quality of vacuum products.
  • the arc titanium pump has the following disadvantages:
  • the object of the present invention is to overcome the above-mentioned deficiencies of the prior art and to provide a high vacuum arc pump which can expand the high vacuum operating range, increase the ultimate vacuum, and use more reliable.
  • a high vacuum arc pump comprising a pump casing and a power source on the pump casing a pump port is provided, and a base is fixed on the openable panel on one side of the pump casing, the base is insulated from the panel, and the base is electrically connected to the negative pole of the power source, the base The inner end is fixedly connected to the cathode target, the positive pole of the power source is electrically connected to the pump casing, and the pump casing is further provided with a metal baffle between the cathode target and the panel, the metal baffle and the metal baffle The surrounding components are insulated.
  • a thermal conductive thin layer having a material characteristic spectrum different from a characteristic spectrum of the cathode target is disposed between the cathode target and the susceptor.
  • the material of the heat conductive thin layer is iron or copper, and the heat conductive thin layer has a thickness of 0.5 to 2 mm.
  • the material of the cathode target is titanium.
  • the cathode target is doped with other materials, and the other material is magnesium, aluminum, zinc, calcium or a mixture of any two of them, and the weight percentage of the other materials in the cathode target is 0.5. ⁇ 80%.
  • the invention also provides a high vacuum arc pump unit, comprising a vacuum chamber, which is respectively connected with a rough pump, a traction molecular pump and a high vacuum arc pump as described above;
  • the vacuum chamber is connected to the rough pump through a first vacuum valve, the vacuum chamber is connected to the traction molecular pump through a second vacuum valve, and the traction molecular pump is connected to the foreline pump through a third vacuum valve.
  • the vacuum chamber is sequentially connected to the high vacuum arc pump via a dust shield and a fourth vacuum valve, and the vacuum chamber is further connected with a gas release valve and a vacuum gauge.
  • the invention also provides a high vacuum arc pump unit, comprising a vacuum chamber, which is respectively connected with a rough pump, a traction molecular pump and a high vacuum arc pump as described above;
  • the vacuum chamber is connected to the rough pump through a first vacuum valve, the vacuum chamber is connected to the traction molecular pump through a second vacuum valve, and the traction molecular pump is connected to the foreline pump through a third vacuum valve.
  • the vacuum chamber is sequentially connected to the high vacuum arc pump via a fourth vacuum valve and a dust shield, and the vacuum chamber is further connected with a gas release valve and a vacuum gauge.
  • the invention also provides a cryogenic high vacuum arc pump unit, comprising a vacuum chamber, which is respectively connected with a cryogenic pump, a rough pump, a traction molecular pump and a high vacuum arc pump as described above;
  • the vacuum chamber is connected to the rough pump through a first vacuum valve, and the vacuum chamber is respectively connected to the cryogenic pump and the traction molecular pump through a second vacuum valve, and the traction molecular pump passes through a third vacuum
  • the valve is connected to the foreline pump, and the vacuum chamber is connected to the high vacuum arc pump via a dust shield and a fourth vacuum valve, and the vacuum chamber is further connected with a vent valve and a vacuum gauge, respectively.
  • the invention also provides a cryogenic arc pump evaporation coating unit, comprising a coating chamber, the coating chamber A rough pump, a traction molecular pump, and a high vacuum arc pump as described above are respectively connected;
  • the coating chamber is connected to the rough pump through a first vacuum valve, and the coating chamber is respectively connected to a cryogenic pump and the traction molecular pump through a second vacuum valve, and the traction molecular pump passes through a third vacuum valve
  • the front stage pump is connected, and the coating chamber is connected to the high vacuum arc pump via a dust shield and a fourth vacuum valve, and the coating chamber is further connected with a gas release valve and a vacuum gauge.
  • the arc pump provided by the invention has a high ultimate vacuum, and the high vacuum operating range is more than 100 times higher than that of the conventional arc pump.
  • the arc pump provided by the invention is reliable in operation, and can issue an early warning signal when the cathode target is exhausted, thereby avoiding a cooling water jacket burn-through accident of the arc pump base.
  • the arc pump provided by the present invention also has a large instantaneous pumping speed and instantaneous pumping flow rate.
  • the high vacuum arc pump unit provided by the invention can replace the large-scale diffusion pump + Roots pump unit with high energy consumption and high oil vapor pollution which is widely used at present, saves 80% of pumping energy consumption, eliminates oil vapor pollution, and improves vacuum. product quality.
  • FIG. 1 is a schematic view of a high vacuum arc pump according to a first embodiment of the present invention.
  • FIG. 2 is a schematic view of a high vacuum arc pump unit according to a second embodiment of the present invention.
  • FIG 3 is a schematic view of a cryogenic high vacuum arc pump unit according to a third embodiment of the present invention.
  • Embodiment 4 is a schematic view of a high vacuum evaporation coating unit provided in Embodiment 4 of the present invention.
  • FIG. 5 is a schematic view of a cryogenic arc pump evaporation coating unit provided in Embodiment 5 of the present invention.
  • Embodiment 1 High Vacuum Arc Pump
  • a high vacuum arc pump 1 includes a pump casing 11 .
  • the upper part of the pump casing 11 is provided with a pump port 12
  • the right side of the pump casing 11 is a panel 13 that can be opened and closed.
  • the base 13 is fixed with a base 14 and the base 14 is insulated from the panel 13.
  • the base 14 is electrically connected to the negative pole of the power source 15.
  • the base 14 is provided with a cooling water jacket 16 and the cooling water jacket 16 is cooled. The water is cooled to the susceptor 14.
  • the inner end of the susceptor 14 is fixedly connected to the cathode target 17, the positive pole of the power source 15 is electrically connected to the pump casing 11, and the pump casing 11 is further provided with a metal between the cathode target 17 and the panel 13.
  • the baffle 18, the metal baffle 18 is preferably stainless steel or aluminum, and the metal baffle 18 is insulated from surrounding components.
  • the metal baffle 18 Since the metal baffle 18 is disposed between the cathode target 17 and the panel 13, the metal baffle 18 can prevent electrons emitted from the cathode target 17 from flowing into the panel 13, so that the temperature of the panel 13 does not rise, and the panel 13 does not need water cooling, The phenomenon of massive desorption of adsorbed gas occurs again.
  • the electron flow from the cathode target 17 flows into the metal baffle 18, but the metal baffle 18 is insulated from the surrounding components, electrons flowing into the metal baffle 18 cannot be separated, and the metal baffle 18 generates a negative voltage, preventing subsequent electrons from continuing to flow.
  • the temperature of the metal baffle 18 does not rise.
  • the cathode target 17 is made of a material capable of chemically reacting with a gas to form a solid phase material (that is, capable of obtaining chemisorption and pumping).
  • the material of the cathode target 17 is preferably titanium, and the cathode target 17 is also doped with high vapor at a high temperature.
  • Other materials which are pressed and also have partial pumping action preferably metal, aluminum, zinc, calcium or a mixture of any two of them, the metal material being present in the cathode target 17 in a weight percentage of from 0.5 to 80%.
  • the cathode target 17 is doped with a high vapor pressure metal material, when the arc discharge is performed, the metal material is mixed with the titanium atom to evaporate at the same time, and a thin layer of metal vapor having a higher pressure (>0.1 Pa) is formed on the surface of the cathode target 17 when When the pressure inside the pump casing 11 is lowered and the arc discharge cannot be maintained, the thin metal vapor layer is used to maintain the arc discharge, thereby greatly expanding the high vacuum operation range of the arc pump 1. Since the vapor pressure of the metal material incorporated at room temperature is less than 10 -9 Pa, the ultimate pressure of the arc pump 1 is not affected, and the measured results show that the present embodiment can be in a high vacuum region of ⁇ 10 -4 Pa.
  • the segment runs stably. Further, since the doped metal material can also remove gases such as O 2 and H 2 O at a high temperature, the cathode target 17 of the present embodiment does not significantly decrease in pumping speed after the metal material is incorporated. In addition, since the price of the incorporated metal material is relatively low, the cost of the cathode target 17 can be reduced, and the running cost of the embodiment can be reduced.
  • a heat conducting thin layer 19 having a characteristic spectrum different from that of the cathode target 17 is further disposed between the cathode target 17 and the susceptor 14.
  • the material of the heat conductive thin layer 19 is preferably iron or copper, and the thermal conductive thin layer The thickness of 19 is preferably 0.5 to 2 mm.
  • the outer wall of the pump casing 11 is provided with a water-cooling passage 110 in addition to the panel 19, and the water-cooling passage 110 is provided with cooling water for cooling the pump casing 11.
  • the arc pump 1 provided in the first embodiment can be used for a high vacuum arc pump unit, a cryogenic high vacuum arc pump unit, a high vacuum device (for example, a high vacuum evaporation coating unit, a brazing furnace, a melting furnace, a sintering furnace, an epitaxial furnace, and a heat treatment). And de-hydrogen furnaces, etc., cryogenic high vacuum equipment (such as cryogenic arc pump evaporation coating unit, brazing furnace, melting furnace, sintering furnace, epitaxial furnace, heat treatment and dehydrogenation furnace, etc.).
  • a high vacuum device for example, a high vacuum evaporation coating unit, a brazing furnace, a melting furnace, a sintering furnace, an epitaxial furnace, and a heat treatment.
  • de-hydrogen furnaces, etc. cryogenic high vacuum equipment (such as cryogenic arc pump evaporation coating unit, brazing furnace, melting furnace, sintering furnace, epitaxial furnace, heat treatment and dehydrogenation
  • Embodiment 2 High vacuum arc pump unit
  • a high vacuum arc pump unit includes a vacuum chamber 21 connected to a rough pump 22, a traction molecular pump 23, and a high as described in the first embodiment.
  • the vacuum chamber 21 is connected to the rough pump 22 through the first vacuum valve 24, the vacuum chamber 21 is connected to the traction molecular pump 23 through the second vacuum valve 25, and the traction molecular pump 23 is passed through the third vacuum valve 26 and the foreline pump 27
  • the vacuum chamber 21 is connected to the high vacuum arc pump 1 via the dust shield 28 and the fourth vacuum valve 29, and the dust shield 28 is preferably an electrostatic dust shield.
  • the vacuum chamber 21 is also connected with a vent valve 210 and a vacuum gauge 211, respectively. .
  • the arc pump 1 is mainly used for extracting the active gas in the fine pumping stage
  • the traction molecular pump 23 is used for extracting the inert gas in the fine pumping stage and the pumping in the medium vacuum stage
  • the rough pump 22 is only used in the rough pumping stage. Pumping, running time only accounts for 1/10 of the total pumping time.
  • Roughing stage 22 gas is pumped by the rough pump, and the pressure of the vacuum chamber 21 is pumped from atmospheric pressure to about 10 2 Pa, and then no longer runs;
  • Fine extraction stage The arc pump 1 + the traction molecular pump 23 + the foreline pump 27 is evacuated, and the pressure of the vacuum chamber 21 is drawn from 0.1 Pa to a high vacuum.
  • the high vacuum arc pump unit provided in the second embodiment can replace the traditional large diffusion pump + Roots pump + rough pump unit (referred to as diffusion pump unit), obtain high vacuum better than 10 -4 Pa, and save energy consumption. More than 80%, reduce operating costs by more than 60%, and can eliminate oil vapor pollution and improve the quality of vacuum products.
  • Embodiment 3 cryogenic high vacuum arc pump unit
  • the third embodiment provides a cryogenic high vacuum arc pump unit, including a vacuum chamber 31.
  • the vacuum chamber 31 is connected with a rough pump 32, a traction molecular pump 33, and the same as described in the first embodiment.
  • the vacuum chamber 31 is connected to the rough pump 32 through the first vacuum valve 34, and the vacuum chamber 31 is connected to the cryogenic pump 36 and the traction molecular pump 33 directly or through the second vacuum valve 35, respectively, and the traction molecular pump 33 passes through the third
  • the vacuum valve 37 is connected to the foreline pump 38, and the vacuum chamber 31 is connected to the high vacuum arc pump 1 through the dust shield 39 and the fourth vacuum valve 310, respectively, and the vacuum chamber 31 is also connected with a deflation valve 311 and a vacuum gauge 312, respectively.
  • cryogenic pump 36 is used for pumping out the medium and high vacuum condensable gas
  • the arc pump 1 is mainly used for extracting the active gas in the fine pumping stage
  • the traction molecular pump 33 is used for extracting the inert gas in the fine pumping stage and
  • the rough pump 32 is only used for pumping in the rough pumping stage, and the running time is only 1/5 of the total pumping time.
  • (1) rough pumping stage pumping by the rough pump 32, pumping the pressure of the vacuum chamber 31 from atmospheric pressure to about 10 2 Pa;
  • Fine pumping stage pumping by arc pump 1 + fore pump 38 + traction molecular pump 33 + cryogenic pump 36, or pumping by arc pump 1 + traction molecular pump 33 + cryogenic pump 36, vacuum chamber
  • the pressure of 31 was drawn from a pressure of about 0.1 Pa to a high vacuum.
  • the fourth vacuum valve 310 connected to the arc pump 1 is turned off 0.5 to 5 minutes earlier, and the arc pump 1 is turned on, and after the accumulation of more active titanium film is completed, the fourth vacuum valve is opened.
  • the 310 starts pumping and obtains a huge instantaneous pumping speed and pumping flow.
  • the cryogenic high vacuum arc pump unit provided in the third embodiment has high pumping efficiency, and the pumping time is about 1/2 of that of the high vacuum arc pump unit described in the second embodiment.
  • Embodiment 4 high vacuum evaporation coating unit
  • a high vacuum evaporation coating unit includes a coating chamber 41 connected to a rough pump 42, a traction molecular pump 43, and a high as described in the first embodiment.
  • the coating chamber 41 is connected to the rough pump 42 through the first vacuum valve 44, the coating chamber 41 is connected to the traction molecular pump 43 through the second vacuum valve 45, and the traction molecular pump 43 is passed through the third vacuum valve 46 and the front.
  • the pumping unit 47 is connected, and the coating chamber 41 is connected to the high vacuum arc pump 1 via the dust shield 48 and the fourth vacuum valve 49 in sequence.
  • the dust shield 48 is preferably an electrostatic dust shield, and the coating chamber 41 is also connected with a vent valve 410 and Vacuum gauge 411.
  • the arc pump 1 is mainly used for extracting the active gas in the fine pumping stage, the traction molecular pump 43 is used for pumping out the inert gas in the fine pumping stage and the pumping in the medium vacuum stage, and the rough pump 42 is only used in the rough pumping stage. Pumping, running time only accounts for 1/10 of the total pumping time.
  • the rough pump 42 is only used for pumping in the rough pumping stage
  • the arc pump 1 is mainly used for pumping in the fine pumping stage
  • the traction molecular pump 43 and the foreline pump 47 are used for pumping in the middle vacuum stage and the fine pumping stage. .
  • the pumping process of the high vacuum evaporation coating unit of the fourth embodiment of the present invention includes the following steps:
  • Preparation stage loading the workpiece into the coating chamber 41, closing the coating chamber 41 and all the vacuum valves, sequentially opening the foreline pump 47, the third vacuum valve 46, and the traction molecular pump 43, and the traction molecular pump 43 is in a standby state;
  • the high vacuum evaporation coating unit provided in the fourth embodiment saves 80% of the energy consumption of the pumping, significantly improves the product quality, and has significant economic benefits.
  • Embodiment 5 cryogenic arc pump evaporation coating unit
  • a cryogenic arc pump evaporation coating unit provided in Embodiment 5 of the present invention includes a coating chamber 51, and the coating chamber 51 is respectively connected with a rough pump 52, a traction molecular pump 53, and the first embodiment.
  • the coating chamber 51 is connected to the rough pump 52 through the first vacuum valve 54, and the coating chamber 51 is connected to the cryogenic pump 56 and the traction molecular pump 53 through the second vacuum valve 55, respectively, and the cryogenic pump 56 is used for pumping.
  • the condensing gas, the traction molecular pump 53 is connected to the foreline pump 58 through the third vacuum valve 57, and the coating chamber 51 is connected to the high vacuum arc pump 1 via the dust shield 59 and the fourth vacuum valve 510, respectively, and the coating chamber 51 is also respectively A vent valve 511 and a vacuum gauge 512 are connected.
  • the rough pump 52 is only used for pumping in the rough pumping stage
  • the arc pump 1 is mainly used for pumping in the fine pumping stage
  • the traction molecular pump 53 and the foreline pump 58 are used for pumping in the middle vacuum stage and the fine pumping stage. .
  • Fine pumping stage pumping by the traction molecular pump 53 + the foreline pump 58 + the cryogenic pump 56 + the arc pump 1 , and pumping the pressure of the coating chamber 51 from 100 to 0.1 Pa to 0.1 to 5 ⁇ 10 -2 Pa.
  • the pumping process of the cryogenic arc pump evaporation coating unit of the fifth embodiment of the present invention includes the following steps:
  • Preparation stage the workpiece to be plated is loaded into the coating chamber 51, the coating chamber 51 and all the vacuum valves are closed, and the foreline pump 58, the third vacuum valve 57, the traction molecular pump 53 and the cryogenic pump 56 are sequentially turned on, and the traction molecules are pulled.
  • the pump 53 and the cryogenic pump 56 are in a standby state;
  • the cooling is performed for about 1 minute, the fourth vacuum valve 510 and the second vacuum valve 55 are closed, the arc pump 1 is turned off, and then the deflation valve 511 is opened to deflate, and the atmosphere is injected into the coating chamber 51 to open the coating chamber 51. , the plated workpiece is taken out, and the coating cycle is completed.
  • the cryogenic arc pump evaporation coating unit provided in the fifth embodiment adopts a cryogenic pump 56 to remove the medium and high vacuum condensable gas, and the arc pump 1 is used to remove the high vacuum active gas, and the pumping efficiency is remarkably improved, and the conventional Compared with the diffusion pump evaporation coating equipment, the energy consumption of pumping is up to 80%, the vacuum coating quality of the product is significantly improved, and the production efficiency is doubled. Moreover, the equipment cost of the same capacity is slightly reduced, and the economic benefit is remarkable.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une pompe à arc électrique à vide poussé (1), et une unité pompe à arc électrique à vide poussé, une unité pompe à arc électrique à vide poussé cryogénique, une unité de revêtement sous vide à vide poussé et une unité de revêtement sous vide à pompe à arc électrique cryogénique comprenant la pompe à arc électrique à vide poussé, qui se rapportent au domaine des techniques de production sous vide. Un matériau à pression de vapeur élevée est dopé dans une cible cathode d'une pompe à arc électrique classique, ce qui étend considérablement le cadre de fonctionnement sous vide poussé de la pompe à arc électrique, et le matériau à pression de vapeur élevée est du magnésium, de l'aluminium, du zinc ou du calcium ou un mélange d'au moins deux d'entre eux, et le matériau à pression de vapeur élevée a une teneur massique de 0,5-80 % dans la cible cathode. Une plaque déflectrice en métal (18) est située entre une cible cathode (17) et un panneau pouvant être ouvert et fermé (13) de la pompe à arc électrique (1), et la plaque déflectrice en métal (18) est isolée des composants voisins, ce qui élimine l'augmentation de température du panneau (13), réduit notablement la désorption d'un gaz adsorbé dans le panneau (13) et améliore davantage le vide final de la pompe à arc électrique (1). De plus, la pompe à arc électrique (1) est dotée d'une mesure d'avertissement anticipé de consommation pour la cible cathode (17), ce qui évite efficacement un accident de transpercement par brûlure d'une chemise d'eau de refroidissement de la pompe à arc électrique (1), et améliore la fiabilité de la pompe à arc électrique (1).
PCT/CN2015/083276 2014-07-17 2015-07-03 Pompe à arc électrique à vide poussé et unité d'extraction d'air de celle-ci WO2016008367A1 (fr)

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CN201410340733.X 2014-07-17

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CN104100492B (zh) * 2014-07-17 2017-07-25 储继国 高真空电弧泵及其抽气机组

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DE10241549B4 (de) * 2002-09-05 2004-07-22 Nawotec Gmbh Orbitron-Pumpe
CN101294270A (zh) * 2008-06-06 2008-10-29 东北大学 真空电弧离子镀制备镍铬复合镀层的设备及方法
CN101936278A (zh) * 2010-09-13 2011-01-05 储继国 一种电弧钛泵及包括该电弧钛泵的真空抽气机组
CN201891569U (zh) * 2010-11-26 2011-07-06 黄瑞安 一种真空电弧钛泵
CN103290388A (zh) * 2013-06-19 2013-09-11 储昕 等离子体镀膜设备及其抽气工艺
CN104100492A (zh) * 2014-07-17 2014-10-15 储继国 高真空电弧泵及其抽气机组
CN204061092U (zh) * 2014-07-17 2014-12-31 储继国 高真空电弧泵及其抽气机组

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CN202131364U (zh) * 2011-06-27 2012-02-01 肇庆市科润真空设备有限公司 一种玻璃镀膜工艺室
CN102978577A (zh) * 2011-09-06 2013-03-20 鸿富锦精密工业（深圳）有限公司 中频磁控溅射镀膜装置
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Publication number Priority date Publication date Assignee Title
CN2239511Y (zh) * 1995-10-24 1996-11-06 袁哲 真空电弧钛泵
DE10241549B4 (de) * 2002-09-05 2004-07-22 Nawotec Gmbh Orbitron-Pumpe
CN101294270A (zh) * 2008-06-06 2008-10-29 东北大学 真空电弧离子镀制备镍铬复合镀层的设备及方法
CN101936278A (zh) * 2010-09-13 2011-01-05 储继国 一种电弧钛泵及包括该电弧钛泵的真空抽气机组
CN201891569U (zh) * 2010-11-26 2011-07-06 黄瑞安 一种真空电弧钛泵
CN103290388A (zh) * 2013-06-19 2013-09-11 储昕 等离子体镀膜设备及其抽气工艺
CN104100492A (zh) * 2014-07-17 2014-10-15 储继国 高真空电弧泵及其抽气机组
CN204061092U (zh) * 2014-07-17 2014-12-31 储继国 高真空电弧泵及其抽气机组

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