WO2015190261A1 - Piezoelectric vibrating reed and piezoelectric device - Google Patents

Piezoelectric vibrating reed and piezoelectric device Download PDF

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Publication number
WO2015190261A1
WO2015190261A1 PCT/JP2015/064682 JP2015064682W WO2015190261A1 WO 2015190261 A1 WO2015190261 A1 WO 2015190261A1 JP 2015064682 W JP2015064682 W JP 2015064682W WO 2015190261 A1 WO2015190261 A1 WO 2015190261A1
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WO
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Prior art keywords
film
frame portion
piezoelectric
electrode
main surface
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PCT/JP2015/064682
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French (fr)
Japanese (ja)
Inventor
浅野慎一
水沢周一
高橋秀樹
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日本電波工業株式会社
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Publication of WO2015190261A1 publication Critical patent/WO2015190261A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a piezoelectric vibrating piece and a piezoelectric device that can suppress solder erosion.
  • Piezoelectric devices are widely used in various electronic devices such as mobile phones and personal computers mainly for frequency selection and control. Piezoelectric devices can be classified into piezoelectric vibrators, piezoelectric oscillators, SAW devices, optical devices, and the like according to their functions. Then, crystal resonators and crystal oscillators using crystal as a piezoelectric element are widely known and are generally used.
  • Patent Document 1 discloses the following as a crystal resonator.
  • a vibration part having excitation electrodes formed on both main surfaces, and a frame part that is connected to the vibration part and surrounds the periphery of the vibration part.
  • a plate-like base plate is joined to the frame portion.
  • a cutout portion is formed on the side surface of the base plate, and a mounting terminal is formed on the back surface of the base plate (the surface opposite to the surface to be joined to the frame portion).
  • an extraction electrode is formed so as to extend from the excitation electrode to the frame portion.
  • the extraction electrode extends to a region facing the notch portion of the base plate.
  • the mounting terminal is electrically connected to the extraction electrode via the electrode formed on the side surface of the notch.
  • the solder may erode the extraction electrode and reach the excitation electrode.
  • the metal constituting the solder and the metal constituting the extraction electrode may easily form an alloy. In such a case, there is a problem that the possibility that the solder reaches the excitation electrode becomes significant.
  • an object of the present invention is to provide a piezoelectric device capable of avoiding that the solder erodes to the excitation electrode when the piezoelectric device is mounted on a substrate with solder.
  • the piezoelectric vibrating piece according to the first aspect is a piezoelectric vibrating piece having a first main surface and a second main surface opposite to the first main surface and formed of a piezoelectric material.
  • the piezoelectric vibrating piece includes a vibrating portion that vibrates at a predetermined frequency, a frame portion that is separated from the vibrating portion and surrounds the vibrating portion, and a connecting portion that connects the vibrating portion and the frame portion.
  • Excitation electrodes are formed on the first main surface and the second main surface of the vibration part of the piezoelectric vibrating piece, respectively, and extraction electrodes are drawn from each excitation electrode to the second main surface of the frame part.
  • the lead electrode formed on the second main surface of the frame portion includes a chromium (Cr) film formed on the lowermost layer, a nickel tungsten (NiW) film formed on the surface of the chromium (Cr) film, and nickel A gold (Au) film formed on the surface of the tungsten (NiW) film and a chromium oxide (Cr2O3) film formed on the surface of the gold (Au) film are formed.
  • Cr chromium
  • NiW nickel tungsten
  • Au nickel A gold
  • the piezoelectric resonator element includes a first chromium oxide (Cr2O3) film including a chromium oxide (Cr2O3) film formed on one extraction electrode on the second main surface of the frame portion. Between the second chromium oxide (Cr2O3) film including the chromium oxide (Cr2O3) film formed on the other extraction electrode and the first chromium oxide (Cr2O3) film and the second chromium oxide (Cr2O3) film. And an insulating region that is formed and extends from the outer periphery to the inner periphery of the second main surface of the frame portion.
  • the insulating region extends longer than the width from the outer periphery to the inner periphery of the frame portion.
  • a chromium oxide (Cr 2 O 3) film is formed on the entire surface of the first main surface of the frame portion from the first aspect to the third aspect.
  • the piezoelectric device according to the fifth aspect is bonded to the piezoelectric vibrating piece according to the first to fourth aspects and the second main surface of the frame portion with a low melting point glass, on the surface opposite to the surface to be bonded to the frame portion.
  • a notch that is recessed inside the base plate is formed on a side surface of the base plate, and a mounting terminal is formed on the second main surface of the frame portion via a side electrode formed in the notch portion.
  • the mounting terminal and the side electrode are formed by a sputtered film formed by sputtering on the bottom layer and a solder film printed by screen printing on the surface of the sputtered film. .
  • the piezoelectric device of the present invention when the piezoelectric device is mounted on the substrate with solder, it is possible to avoid the solder from eroding to the excitation electrode.
  • FIG. 1 is an exploded perspective view of a piezoelectric device 100.
  • FIG. FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • FIG. 4A is a top view of the piezoelectric vibrating piece 120.
  • FIG. (B) is a bottom view of the piezoelectric vibrating piece 120.
  • (A) is a BB cross-sectional view of FIGS. 3 (a) and 3 (b).
  • (B) is a partial cross-sectional view of the piezoelectric vibrating piece 120.
  • 1 is a partial cross-sectional view of a piezoelectric device 100.
  • FIG. FIG. 6A is a bottom view of the piezoelectric vibrating piece 220.
  • FIG. (B) is a partial cross-sectional view of the piezoelectric device 200.
  • FIG. 6A is a bottom view of the piezoelectric vibrating piece 320.
  • FIG. (B) is a partial cross-sectional view of the piezoelectric device 300.
  • FIG. 6A is a top view of the piezoelectric vibrating piece 420.
  • FIG. (B) is a partial cross-sectional view of the piezoelectric device 400.
  • 2 is a partial cross-sectional view of a piezoelectric device 500.
  • FIG. 1 is an exploded perspective view of the piezoelectric device 100.
  • the piezoelectric device 100 has a configuration in which a base plate 140, a piezoelectric vibrating piece 120, and a lid plate 110 are laminated.
  • As the piezoelectric vibrating piece 120 for example, an AT-cut crystal vibrating piece is used.
  • the AT-cut quartz crystal resonator element has a main surface (XZ plane) inclined at 35 degrees 15 minutes from the Z axis in the Y axis direction around the X axis of the crystal axis (XYZ).
  • the new axes tilted with respect to the axial direction of the AT-cut quartz crystal vibrating piece are used as the Y ′ axis and the Z ′ axis. That is, in the piezoelectric device 100, the longitudinal direction of the piezoelectric device 100 is defined as the X-axis direction, the height direction of the piezoelectric device 100 is defined as the Y′-axis direction, and the direction perpendicular to the X-axis direction and the Y′-axis direction is described as the Z′-axis direction. To do.
  • the piezoelectric vibrating piece 120 has a rectangular vibrating portion 124 that vibrates at a predetermined frequency.
  • a frame portion 122 is provided outside the vibrating portion 124 so as to be separated from the vibrating portion 124 and surround the vibrating portion 124.
  • the vibrating portion 124 and the frame portion 122 are connected by a connecting portion 126 that extends in the ⁇ X axis direction from the ⁇ X axis side of the vibrating portion 124 and reaches the frame portion 122.
  • excitation electrodes 128 facing each other are formed on the surfaces on the + Y′-axis side and the surface on the ⁇ Y′-axis side that are both main surfaces of the vibration part 124.
  • an extraction electrode 130 is drawn out to the frame portion 122 via the connecting portion 126.
  • the extraction electrode 130 includes an extraction electrode 130a mainly formed on the surface at the + Y′-axis side of the coupling portion 126 and the frame portion 122; an extraction electrode 130b formed on the surface at the ⁇ Y′-axis side of the frame portion 122; Consists of.
  • the base plate 140 is formed in a flat plate shape and joined to the surface of the frame portion 122 on the ⁇ Y′-axis side.
  • the base plate 140 is disposed so as to face the vibration part 124.
  • the base plate 140 is formed using glass or quartz as a base material.
  • notches 148 formed so that the corners of the base plate 140 are cut off are formed at the corners of the base plate 140 on the + Z ′ axis side on the ⁇ X axis side and the ⁇ Z ′ axis side on the + X axis side. ing. Electrodes are formed on the base plate 140 but are not shown in FIG.
  • the lid plate 110 is formed in a flat plate shape and joined to the surface on the + Y′-axis side of the frame portion 122.
  • the lid plate 110 is disposed so as to face the vibrating portion 124.
  • the lid plate 110 is made of glass or quartz.
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • the lid plate 110 and the frame portion 122 are bonded together by a non-conductive bonding material 151 such as a resin adhesive such as polyimide or low-melting glass. Further, the base plate 140 and the frame portion 122 are also bonded by the bonding material 151.
  • the vibrating portion 124 is hermetically sealed in the cavity 101 surrounded by the lid plate 110, the frame portion 122, and the base plate 140.
  • the vibrating portion 124 is formed thinner than the frame portion 122 in order to adjust the frequency of the piezoelectric device 100 and so that the vibrating portion 124 does not contact the lid plate 110 and the base plate 140.
  • a pair of mounting terminals 142 are formed on the surface of the base plate 140 on the ⁇ Y′-axis side. Further, a notch electrode 144 is formed on the side surface of the notch 148, and an end electrode 146 is formed so as to be connected to the extraction electrode 130b.
  • One of the mounting terminals 142 is formed on the + X axis side of the base plate 140, and the other of the mounting terminals 142 is formed on the ⁇ X axis side of the base plate 140.
  • Each mounting terminal 142 extends to the notch 148 and is connected to the notch electrode 144.
  • the notch electrode 144 extends to the surface on the ⁇ Y′-axis side of the frame portion 122 and is connected to the end electrode 146.
  • the mounting terminal 142 is electrically connected to the excitation electrode 128 via the notch electrode 144, the end electrode 146, and the extraction electrode 130.
  • FIG. 3A is a top view of the piezoelectric vibrating piece 120.
  • a through groove 132 that penetrates the piezoelectric vibrating piece 120 in the Y′-axis direction is formed between the vibrating portion 124 and the frame portion 122.
  • the vibration part 124 and the frame part 122 are connected via a connecting part 126.
  • An excitation electrode 128 is formed on the vibrating portion 124, and an extraction electrode 130 a is drawn from the excitation electrode 128 formed on the surface on the + Y′-axis side to the frame portion 122 via the connecting portion 126.
  • the extraction electrode 130 a is extracted to the surface on the ⁇ Y′-axis side of the frame portion 122 through the side surface 134 of the through groove 132.
  • FIG. 3B is a bottom view of the piezoelectric vibrating piece 120.
  • An extraction electrode 130 a is extracted from the excitation electrode 128 formed on the surface at the ⁇ Y′-axis side of the vibration unit 124.
  • the extraction electrode 130a extends from the excitation electrode 128 on the ⁇ Y′-axis side surface of the vibrating portion 124 in the ⁇ X-axis direction, and is connected to the extraction electrode 130b formed on the ⁇ Y′-axis side surface of the frame portion 122. .
  • the extraction electrode 130b further passes through the ⁇ X′-axis side and ⁇ Z′-axis side portions of the frame portion 122, and is a surface on the ⁇ Y′-axis side of the frame portion 122, on the ⁇ Z′-axis side and the + X-axis side. Extends to the corner.
  • the extraction electrode 130 a that is extracted from the excitation electrode 128 formed on the surface on the + Y′-axis side of the vibrating portion 124 is + Z ′ on the surface on the ⁇ Y′-axis side of the frame portion 122 through the side surface 134 of the through groove 132. It is connected to an extraction electrode 130b formed at the corner on the axis side and on the ⁇ X axis side.
  • FIG. 4A is a cross-sectional view taken along line BB in FIGS. 3A and 3B.
  • the excitation electrode 128 and the extraction electrode 130a are configured by an electrode film 190 formed by sputtering or vapor deposition.
  • the extraction electrode 130b also has the same electrode film 190 as the excitation electrode 128 and the extraction electrode 130a, but a chromium oxide (Cr2O3) film 191D is further formed on the surface thereof.
  • a chromium oxide (Cr 2 O 3) film 191 D is formed by forming a chromium (Cr) film on the entire surface of the piezoelectric vibrating piece 120 on the ⁇ Y′-axis side after forming the electrode film 190, for example.
  • the chromium (Cr) film formed on the frame portion 122 is oxidized.
  • the oxidation of the chromium (Cr) film is performed by opening the chromium (Cr) film to the atmosphere.
  • FIG. 4B is a partial cross-sectional view of the piezoelectric vibrating piece 120.
  • FIG. 4B shows a cross section of a portion surrounded by a dotted line 182 in FIG.
  • the electrode film 190 is formed on the surface of the first layer 191A that is a layer in contact with the base material of the base plate 140, the second layer 191B formed on the surface of the first layer 191A, and the surface of the second layer 191B.
  • the third layer 191C is formed of three layers.
  • the first layer 191A is formed as a layer of chromium (Cr) film
  • the second layer 191B is formed as a layer of nickel tungsten (NiW) film which is an alloy of nickel (Ni) and tungsten (W)
  • the third layer 191C is formed as a layer of gold (Au) film.
  • a chromium oxide (Cr 2 O 3) film 191 D is further formed on the surface of the electrode film 190.
  • FIG. 5 is a partial cross-sectional view of the piezoelectric device 100.
  • FIG. 5 shows a partial cross section of a region surrounded by a dotted line 181 in FIG.
  • FIG. 5 is shown as a partial cross-section in a state where the piezoelectric device 100 is mounted on the printed circuit board 160.
  • An electrode 161 is formed on the surface on the + Y′-axis side of the printed circuit board 160, and the piezoelectric device 100 is mounted on the electrode 161 via the solder 152.
  • the mounting terminal 142, the notch electrode 144, and the end electrode 146 formed on the piezoelectric device 100 are a sputtered film 192A formed by sputtering or the like, and an electroless plating formed on the surface of the sputtered film 192A. And a plating film 192B.
  • the sputtered film 192A includes, for example, a chromium (Cr) layer formed on the surface of the base material of the base plate 140, a nickel tungsten (NiW) layer formed on the surface of the chromium (Cr) layer, and a nickel tungsten (NiW) layer. It is formed by three layers of gold (Au) layers formed on the surface.
  • the electroless plating film 192B is formed of, for example, two layers of a nickel (Ni) layer formed on the surface of the sputtered film 192A and a gold (Au) layer formed on the surface of the nickel (Ni) layer.
  • the mounting terminal 142, the notch electrode 144, and the end electrode 146 are formed to be thick as a whole by including the electroless plating film 192 ⁇ / b> B, whereby the mounting terminal 142, the notch electrode 144, The disconnection of the end electrode 146 is prevented, and conduction is ensured.
  • the thickness T1 of the chromium oxide film 191D is formed to a thickness of 1000 angstroms ( ⁇ ) or less. If the thickness T1 is 1000 angstroms ( ⁇ ) or less, the gold (Au) of the gold (Au) layer formed in the lower layer of the chromium oxide film 191D diffuses into the chromium oxide film 191D. Conductivity can be maintained. However, when the thickness T1 is greater than 1000 angstroms ( ⁇ ), the electrical resistance increases and the conduction between the extraction electrode 130b and the end electrode 146 is hindered.
  • the solder 152 scoops up the notch electrode 144 and reaches the end electrode 146.
  • the solder 152 is an alloy containing lead (Pb) and tin (Sn) as main components, and tin (Sn) as the main component of the solder 152 has a property of easily forming an alloy with gold (Au). It is known. Therefore, when heated in a state where tin (Sn) and gold (Au) are in contact, tin (Sn) erodes gold (Au).
  • the end electrode 146 Since the end electrode 146 has a chromium (Cr) layer, a nickel tungsten (NiW) layer, and a nickel (Ni) layer in which the solder 152 is slowly eroded on the sputtered film 192A or the electroless plating film 192B, the end electrode 146 It is not easily eroded by the solder 152. However, since the sputtered film 192A or the electroless plated film 192B has a gold (Au) layer and the printed circuit board on which the piezoelectric device is mounted can be heated a plurality of times for the manufacture of electronic equipment, the tin of the solder 152 (Sn) may erode the end electrode 146 and reach the extraction electrode.
  • Cr chromium
  • NiW nickel tungsten
  • Ni nickel
  • tin (Sn) of the solder 152 reaches the excitation electrode of the piezoelectric vibrating piece via the gold (Au) layer of the extraction electrode, and excitation is performed.
  • the frequency of the piezoelectric vibrating piece is shifted or the oscillation of the piezoelectric vibrating piece is prevented by eroding the electrode.
  • a chromium oxide film 191 ⁇ / b> D is formed between the end electrode 146 and the electrode film 190 constituting the extraction electrode 130. Since the chromium oxide (Cr 2 O 3) film can be a passive film capable of preventing tin (Sn) erosion, in the piezoelectric device 100, the chromium oxide film 191 D prevents the tin (Sn) erosion, thereby preventing the solder 152. Of tin (Sn) is prevented from reaching the gold (Au) layer of the extraction electrode 130.
  • the bonding material 151 when a low melting glass is used as the bonding material 151, the bonding between the low melting glass and the gold (Au) layer formed on the outermost surface of the extraction electrode is weak, and the piezoelectric vibrating piece In some cases, the bonding strength between the frame portion and the base plate was weak. Thereby, the sealing of the cavity 101 may be easily broken.
  • the piezoelectric device 100 Since the low melting point glass and the oxide film are strongly bonded, the piezoelectric device 100 forms the chromium oxide film 191D on the surface of the gold (Au) layer of the electrode film 190, thereby forming the extraction electrode 130b and the bonding material 151.
  • the bonding strength with the low melting point glass is increased. Therefore, the frame portion 122 of the piezoelectric vibrating piece 120 and the base plate 140 are strongly bonded to each other, and the sealing of the cavity 101 is prevented from being broken.
  • nickel tungsten (NiW) has the property of being easily eroded by moisture when it is in contact with gold (Au) and in contact with moisture (water). Therefore, in the conventional piezoelectric device, the nickel tungsten (NiW) layer of the piezoelectric vibrating piece may be eroded and removed by the moisture of the outside air, and further, the piezoelectric vibrating piece is formed along with the removal of the nickel tungsten (NiW) layer. In some cases, the chromium (Cr) layer is also removed.
  • the gold (Au) layer having weak bonding strength with the crystal forming the frame portion is in direct contact with the frame portion, the airtightness of the cavity in the piezoelectric device cannot be ensured, and the moisture resistance is deteriorated. was there.
  • the chromium (Cr) layer is formed thick so that the chromium (Cr) layer of the piezoelectric vibrating piece is not removed, the chromium (Cr) of the chromium (Cr) layer diffuses into the nickel tungsten (NiW) layer. Since the chromium (Cr) layer is thin, the effect is small, and when the chromium (Cr) layer is formed thick, there arises a problem that the crystal impedance (CI) is deteriorated.
  • the piezoelectric device 100 even if the thickness of the chromium (Cr) layer constituting the first layer 191A is formed so that the crystal impedance (CI) is within an allowable range, the chromium oxide (Cr2O3) film is formed. 191D diffuses to the chromium (Cr) layer constituting the first layer 191A via the gold (Au) layer constituting the third layer 191C and the nickel tungsten (NiW) layer constituting the second layer 191B. It is possible to prevent all of the chromium (Cr) layer constituting the first layer 191A from being removed.
  • the gold (Au) layer constituting the third layer 191C is prevented from coming into direct contact with the frame portion 122, airtightness in the cavity 101 can be secured, and moisture resistance is prevented from deteriorating. be able to.
  • the extraction electrode or the electrode formed on the base plate can be formed in various shapes or configurations.
  • modified examples of the piezoelectric device 100 in which the electrode formed on the extraction electrode or the base plate is different from the piezoelectric device 100 will be described.
  • the same parts as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and the description thereof is omitted.
  • FIG. 6A is a bottom view of the piezoelectric vibrating piece 220.
  • an extraction electrode 230b is formed on the surface of the frame portion 122 on the ⁇ Y′-axis side instead of the extraction electrode 130b.
  • the other configuration of the piezoelectric vibrating piece 220 is the same as that of the piezoelectric vibrating piece 120.
  • the electrode film 190 is formed so as not to contact the outermost periphery of the surface on the ⁇ Y′-axis side of the frame portion 122.
  • a chromium oxide film 191D is formed on the surface of the electrode film 190.
  • the chromium oxide film 191D is formed so as to be in contact with the outermost periphery of the surface on the ⁇ Y′-axis side of the frame portion 122.
  • FIG. 6B is a partial cross-sectional view of the piezoelectric device 200.
  • the piezoelectric device 200 is mainly composed of a base plate 140, a piezoelectric vibrating piece 220, and a lid plate 110.
  • the extraction electrode 230 b is formed instead of the extraction electrode 130 b in the piezoelectric device 100
  • the end electrode 246 is formed instead of the end electrode 146.
  • Other configurations of the piezoelectric device 200 are the same as those of the piezoelectric device 100.
  • FIG. 6B shows a partial cross-sectional view of the piezoelectric device 200 corresponding to the same part as in FIG.
  • the extraction electrode 230b of the piezoelectric device 200 is not formed with the electrode film 190 up to the outer end portion of the surface on the ⁇ Y′-axis side of the frame portion 122. Only 191D is formed up to the outer end portion of the surface of the frame portion 122 on the ⁇ Y′-axis side. Thereby, in the extraction electrode 230b, the chromium oxide film 191D is formed so as to cover the side surface of the electrode film 190.
  • the end electrode 246 is formed so as to be bonded to the surface of the chromium oxide film 191D of the extraction electrode 230b, and is composed of a sputtered film 192A and an electroless plating film 192B, like the end electrode 146.
  • the tin (Sn) of the solder 152 becomes the gold (Au of the extraction electrode)
  • the frequency of the piezoelectric vibrating piece is shifted by reaching the excitation electrode of the piezoelectric vibrating piece through the layer and eroding the excitation electrode, or the oscillation of the piezoelectric vibrating piece is hindered.
  • the gold (Au) layer of the extraction electrode 230 b is not exposed on the surface of the piezoelectric device 200. This prevents the solder 152 from contacting the gold (Au) layer of the extraction electrode 230b.
  • FIG. 7A is a bottom view of the piezoelectric vibrating piece 320.
  • an extraction electrode 330b is formed on the surface of the frame portion 122 on the ⁇ Y′-axis side instead of the extraction electrode 130b.
  • the other configuration of the piezoelectric vibrating piece 320 is the same as that of the piezoelectric vibrating piece 120.
  • the extraction electrode 330b includes an electrode film 190 and a chromium oxide film 191D formed on the surface of the electrode film 190.
  • the chromium oxide film 191D of the extraction electrode 330b is also formed in a region where the electrode film 190 is not formed on the surface on the ⁇ Y′-axis side of the frame portion 122.
  • the chromium oxide film 191D is formed so as to substantially cover the surface on the ⁇ Y′-axis side of the frame portion 122, but the extraction electrode 330b connected to the excitation electrode 128 on the surface on the + Y′-axis side and the surface on the + Y′-axis side.
  • an insulating region 183a and an insulating region 183b where the chromium oxide film 191D is not formed are formed between the extraction electrodes 330b.
  • the insulating region 183a and the insulating region 183b are formed so as to connect the inner side and the outer side of the surface of the frame portion 122 on the ⁇ Y′-axis side. Thereby, the insulation between each extraction electrode 330b is maintained.
  • the length of the path between the inner side and the outer side of the surface on the ⁇ Y′-axis side of the frame portion 122 in the insulating region 183a and the insulating region 183b is the surface on the ⁇ Y′-axis side of the frame portion 122. It is formed longer than the width between the inner side and the outer side.
  • the insulating region 183a is near the center on the + Z′-axis side of the surface on the ⁇ Y′-axis side of the frame portion 122, and the insulating region 183b is the ⁇ X-axis on the surface on the ⁇ Y′-axis side of the frame portion 122.
  • the positions where the insulating regions 183a and 183b are formed are not limited to these positions.
  • FIG. 7B is a partial cross-sectional view of the piezoelectric device 300.
  • the piezoelectric device 300 is mainly configured by a base plate 140, a piezoelectric vibrating piece 320, and a lid plate 110.
  • FIG. 7B shows a partial cross-sectional view of the piezoelectric device 300 including the CC cross section of FIG. 7A, and the lid plate 110 is omitted.
  • a thickness T1 of the chromium oxide film 191D is formed to be 1000 angstroms ( ⁇ ) or less. Further, the distance T2 between the base plate 140 and the frame portion 122 is, for example, 300 ⁇ m.
  • the low-melting glass used as the bonding material 151 when the low-melting glass used as the bonding material 151 is directly bonded to the frame portion 122 formed of quartz, moisture and the like are cavities through the bonding surface between the low-melting glass and the frame portion 122. The humidity inside the cavity 101 is likely to rise. This causes a problem that the frequency change of the piezoelectric vibrating piece is likely to occur.
  • the chromium oxide film 191D is formed also in the region of the surface on the ⁇ Y′-axis side of the frame portion 122 where the electrode film 190 is not formed, whereby the bonding material
  • the low melting point glass used as 151 and the frame portion 122 are formed so as to have a smaller area. Since the bonding strength of the low melting point glass is stronger than that of the quartz crystal than the quartz crystal, the region where the low melting point glass and the chromium oxide are bonded has higher moisture than the region where the low melting point glass and the frame portion 122 are directly bonded. It becomes difficult to pass.
  • the amount of moisture or the like that enters the cavity 101 via the bonding surface between the low melting point glass and the frame portion 122 can be reduced.
  • the length of the path connecting the inside and the outside of the cavity 101 is the inner side of the surface on the ⁇ Y′-axis side of the frame portion 122.
  • the chromium oxide film 191D covers the electrode film 190 in the same manner as the piezoelectric device 100, thereby ensuring airtightness in the cavity 101 and preventing deterioration of moisture resistance. Since the area where the portion 122 is directly joined is reduced, problems such as a change in the frequency of the piezoelectric vibrating piece due to an increase in the humidity in the cavity 101 are prevented.
  • FIG. 8A is a top view of the piezoelectric vibrating piece 420.
  • an extraction electrode 430a is formed on the surface of the frame portion 122 on the + Y′-axis side instead of the extraction electrode 130a.
  • the other configuration of the piezoelectric vibrating piece 420 is the same as that of the piezoelectric vibrating piece 120.
  • the extraction electrode 430a has an electrode film 190 similar to the extraction electrode 130a, but is configured by forming a chromium oxide film 191D on the entire surface on the + Y′-axis side of the frame portion 122 including the surface of the electrode film 190. Is done.
  • FIG. 8B is a partial cross-sectional view of the piezoelectric device 400.
  • the piezoelectric device 400 mainly includes a base plate 140, a piezoelectric vibrating piece 420, and a lid plate 110.
  • an extraction electrode 430 a is formed instead of the extraction electrode 130 a in the piezoelectric device 100.
  • Other configurations of the piezoelectric device 400 are the same as those of the piezoelectric device 100.
  • FIG. 8B shows a partial cross-sectional view of the piezoelectric device 400 corresponding to the same part as in FIG.
  • the low melting point glass is directly bonded to the gold (Au) film of the third layer 191C of the electrode film 190, but since the bonding between the gold (Au) and the low melting point glass is weak, the frame portion of the piezoelectric vibrating piece. In some cases, the bonding strength between the base plate and the base plate becomes weak.
  • the piezoelectric device 400 by forming the chromium oxide film 191D on the surface of the gold (Au) layer of the electrode film 190, the bonding strength between the extraction electrode 130b and the low melting point glass constituting the bonding material 151 is increased. Therefore, the frame portion 122 of the piezoelectric vibrating piece 420 and the base plate 140 are strongly joined to prevent the cavity 101 from being broken.
  • FIG. 9 is a partial cross-sectional view of the piezoelectric device 500.
  • the piezoelectric device 500 is a piezoelectric device in which a mounting terminal 542, a notch electrode 544, and an end electrode 546 are formed instead of the mounting terminal 142, the notch electrode 144, and the end electrode 146 in the piezoelectric device 100.
  • the mounting terminal 542, the notch electrode 544, and the end electrode 546 have a sputtered film 192A formed by sputtering or vapor deposition, and a solder film 192C is formed on the surface of the sputtered film 192A.
  • the solder layer 192C is formed by printing solder on the surface of the sputter layer 192A.
  • a DIP method in which the solder film is formed by immersing in a solder bath is conceivable.
  • the DIP method cannot be employed because the thermal shock applied to the wafer increases. Forming a solder film by printing is preferable because such a thermal shock is not applied to the wafer.
  • the mounting terminal forms a film by sputtering, but it is difficult to guarantee conduction only by the film by sputtering, so electroless plating is formed on the surface of the sputtering film.
  • electroless plating requires material costs and man-hours, and the plating condition management is severe.
  • the piezoelectric device 500 the solder film 192C is formed by performing solder printing instead of forming the electroless plating film, and the conduction of the mounting terminals is ensured.
  • the piezoelectric device 500 is preferable because there is no electroless plating step, so that the material cost of the electroless plating can be reduced.
  • the piezoelectric vibrating piece is an AT-cut crystal, but a crystal such as a Z-cut or a BT-cut may be used.
  • the piezoelectric device is a crystal resonator, it may be a piezoelectric oscillator equipped with an IC including an oscillation circuit.
  • the piezoelectric vibrating piece is formed of quartz, a piezoelectric material other than quartz, for example, lithium tantalate, lithium niobate, or piezoelectric ceramic may be used.
  • Insulating region 190 Electrode film 191A ... First layer 191B ... Second layer 191C ... Third layer 191D ... Chromium oxide film 192A ... Sputtered film 192B ... Electroless plated film 192C ... Solder film T1 ... Thickness of chromium oxide film 191D T2 ... Distance between base plate 140 and frame portion 122

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Abstract

Provided are a piezoelectric vibrating reed and a piezoelectric device which when being mounted to a substrate by soldering, can avoid the erosion of solder to an excitation electrode. A piezoelectric vibrating reed (120) has a first principal surface and a second principal surface on the reverse side to the first principal surface, and comprises a vibration part (124), a frame part (122) which is apart from the vibration part and surrounds the vibration part, and a coupling part (126) which couples the vibration part and the frame part. Excitation electrodes (128) are respectively formed on the first principal surface and the second principal surface of the vibration part, and extraction electrodes (130) are extracted from the respective excitation electrodes to the second principal surface of the frame part. The extraction electrode formed on the second principal surface of the frame part is formed from a chromium (Cr) film (191A) formed in the lowest layer, a nickel tungsten (NiW) film (191B) formed on the surface of the chromium (Cr) film, a gold (Au) film (191C) formed on the surface of the nickel tungsten (NiW) film, and a chromium oxide (Cr2O3) film (191D) formed on the surface of the gold (Au) film.

Description

圧電振動片及び圧電デバイスPiezoelectric vibrating piece and piezoelectric device
　本発明は、ハンダの浸食を抑制できる圧電振動片及び圧電デバイスに関する。 The present invention relates to a piezoelectric vibrating piece and a piezoelectric device that can suppress solder erosion.
　携帯電話やパーソナルコンピュータなどの様々な電子機器には、主に周波数の選択や制御のために圧電デバイスが広く使われている。圧電デバイスは機能によって圧電振動子、圧電発振器、ＳＡＷデバイスや光学デバイス等に分類できる。そして、圧電素子に水晶を用いた水晶振動子や水晶発振器等が広く知られており、一般的に使われている。 Piezoelectric devices are widely used in various electronic devices such as mobile phones and personal computers mainly for frequency selection and control. Piezoelectric devices can be classified into piezoelectric vibrators, piezoelectric oscillators, SAW devices, optical devices, and the like according to their functions. Then, crystal resonators and crystal oscillators using crystal as a piezoelectric element are widely known and are generally used.
　ここで水晶振動子として、例えば、特許文献１では次のようなものが開示されている。まず、両主面に励振電極が形成された振動部と、振動部と接続して、当該振動部の周囲を囲む枠部がある。枠部には板状のベース板が接合する。ベース板の側面には切欠き部が形成され、ベース板の裏面（枠部と接合する面の反対面）には実装端子が形成される。ここで、励振電極からは、枠部まで伸びるように引出電極が形成される。引出電極は、ベース板の切欠き部に対向する領域まで伸びる。そして、実装端子は、切欠き部の側面に形成された電極を経由して引出電極に導通する。 Here, for example, Patent Document 1 discloses the following as a crystal resonator. First, there are a vibration part having excitation electrodes formed on both main surfaces, and a frame part that is connected to the vibration part and surrounds the periphery of the vibration part. A plate-like base plate is joined to the frame portion. A cutout portion is formed on the side surface of the base plate, and a mounting terminal is formed on the back surface of the base plate (the surface opposite to the surface to be joined to the frame portion). Here, an extraction electrode is formed so as to extend from the excitation electrode to the frame portion. The extraction electrode extends to a region facing the notch portion of the base plate. The mounting terminal is electrically connected to the extraction electrode via the electrode formed on the side surface of the notch.
特開２０１３－０１７１６３号公報JP 2013-0117163 A
　しかし、当該水晶振動子が、ハンダによって基板に実装された場合、ハンダが引出電極を浸食して、励振電極まで到達するおそれがあった。特に、電子機器の製造のために、当該水晶振動子を実装した基板を複数回加熱することが必要な場合がある。また、ハンダを構成する金属と引出電極を構成する金属とが合金を形成しやすい場合がある。このような場合に、ハンダが励振電極まで到達するおそれが顕著になるという問題があった。 However, when the crystal resonator is mounted on the substrate by solder, the solder may erode the extraction electrode and reach the excitation electrode. In particular, in order to manufacture an electronic device, it may be necessary to heat the substrate on which the crystal resonator is mounted a plurality of times. In addition, the metal constituting the solder and the metal constituting the extraction electrode may easily form an alloy. In such a case, there is a problem that the possibility that the solder reaches the excitation electrode becomes significant.
　以上のような事情に鑑みて、本発明は圧電デバイスをハンダで基板に実装した場合に、ハンダが励振電極まで浸食することを回避できる圧電デバイスの提供を目的とする。 In view of the above circumstances, an object of the present invention is to provide a piezoelectric device capable of avoiding that the solder erodes to the excitation electrode when the piezoelectric device is mounted on a substrate with solder.
　第１観点の圧電振動片は、第１主面と第１主面の反対側の第２主面とを有し、圧電材料により形成される圧電振動片である。また、圧電振動片は、所定の周波数で振動する振動部と、振動部と離間して振動部の周りを囲む枠部と、振動部と枠部とを連結する連結部と、を有する。圧電振動片の振動部の第１主面及び第２主面にはそれぞれ励振電極が形成され、さらに各励振電極から枠部の第２主面にまではそれぞれ引出電極が引き出される。また、枠部の第２主面に形成される引出電極は、最下層に形成されるクロム（Ｃｒ）膜と、クロム（Ｃｒ）膜の表面に形成されるニッケルタングステン（ＮｉＷ）膜と、ニッケルタングステン（ＮｉＷ）膜の表面に形成される金（Ａｕ）膜と、金（Ａｕ）膜の表面に形成される酸化クロム（Ｃｒ２Ｏ３）膜と、により形成される。 The piezoelectric vibrating piece according to the first aspect is a piezoelectric vibrating piece having a first main surface and a second main surface opposite to the first main surface and formed of a piezoelectric material. The piezoelectric vibrating piece includes a vibrating portion that vibrates at a predetermined frequency, a frame portion that is separated from the vibrating portion and surrounds the vibrating portion, and a connecting portion that connects the vibrating portion and the frame portion. Excitation electrodes are formed on the first main surface and the second main surface of the vibration part of the piezoelectric vibrating piece, respectively, and extraction electrodes are drawn from each excitation electrode to the second main surface of the frame part. The lead electrode formed on the second main surface of the frame portion includes a chromium (Cr) film formed on the lowermost layer, a nickel tungsten (NiW) film formed on the surface of the chromium (Cr) film, and nickel A gold (Au) film formed on the surface of the tungsten (NiW) film and a chromium oxide (Cr2O3) film formed on the surface of the gold (Au) film are formed.
　第２観点の圧電振動片は、第１観点において、枠部の第２主面には、一方の引出電極に形成される酸化クロム（Ｃｒ２Ｏ３）膜を含む第１の酸化クロム（Ｃｒ２Ｏ３）膜と、他方の引出電極に形成される酸化クロム（Ｃｒ２Ｏ３）膜を含む第２の酸化クロム（Ｃｒ２Ｏ３）膜と、第１の酸化クロム（Ｃｒ２Ｏ３）膜及び第２の酸化クロム（Ｃｒ２Ｏ３）膜の間に形成され枠部の第２主面の外周から内周へ伸びる絶縁領域と、が形成される。 In the first aspect, the piezoelectric resonator element according to the second aspect includes a first chromium oxide (Cr2O3) film including a chromium oxide (Cr2O3) film formed on one extraction electrode on the second main surface of the frame portion. Between the second chromium oxide (Cr2O3) film including the chromium oxide (Cr2O3) film formed on the other extraction electrode and the first chromium oxide (Cr2O3) film and the second chromium oxide (Cr2O3) film. And an insulating region that is formed and extends from the outer periphery to the inner periphery of the second main surface of the frame portion.
　第３観点の圧電振動片は、第２観点において、絶縁領域が、枠部の外周から内周への幅よりも長く伸びる。 In the piezoelectric resonator element according to the third aspect, in the second aspect, the insulating region extends longer than the width from the outer periphery to the inner periphery of the frame portion.
　第４観点の圧電振動片は、第１観点から第３観点において、枠部の第１主面の全面に酸化クロム（Ｃｒ２Ｏ３）膜が形成される。 In the piezoelectric resonator element according to the fourth aspect, a chromium oxide (Cr 2 O 3) film is formed on the entire surface of the first main surface of the frame portion from the first aspect to the third aspect.
　第５観点の圧電デバイスは、第１観点から第４観点の圧電振動片と、枠部の第２主面に低融点ガラスにより接合され、枠部に接合される面とは反対側の面に実装端子が形成されるベース板と、枠部の第１主面に低融点ガラスにより接合されるリッド板と、を有する。 The piezoelectric device according to the fifth aspect is bonded to the piezoelectric vibrating piece according to the first to fourth aspects and the second main surface of the frame portion with a low melting point glass, on the surface opposite to the surface to be bonded to the frame portion. A base plate on which the mounting terminals are formed; and a lid plate joined to the first main surface of the frame portion by low-melting glass.
　第６観点の圧電デバイスは、ベース板の側面にはベース板の内側に凹む切欠き部が形成され、実装端子が切欠き部に形成される側面電極を介して枠部の第２主面に形成される引出電極に電気的に接合され、実装端子及び側面電極が、最下層にスパッタにより形成されるスパッタ膜と、スパッタ膜の表面にスクリーン印刷により印刷されるハンダ膜と、により形成される。 In the piezoelectric device of the sixth aspect, a notch that is recessed inside the base plate is formed on a side surface of the base plate, and a mounting terminal is formed on the second main surface of the frame portion via a side electrode formed in the notch portion. The mounting terminal and the side electrode are formed by a sputtered film formed by sputtering on the bottom layer and a solder film printed by screen printing on the surface of the sputtered film. .
　本発明の圧電デバイスによれば、圧電デバイスをハンダで基板に実装した場合に、ハンダが励振電極まで浸食することを回避できる。 According to the piezoelectric device of the present invention, when the piezoelectric device is mounted on the substrate with solder, it is possible to avoid the solder from eroding to the excitation electrode.
圧電デバイス１００の分解斜視図である。1 is an exploded perspective view of a piezoelectric device 100. FIG. 図１のＡ－Ａ断面図である。FIG. 2 is a cross-sectional view taken along the line AA in FIG. （ａ）は、圧電振動片１２０の上面図である。　（ｂ）は、圧電振動片１２０の下面図である。FIG. 4A is a top view of the piezoelectric vibrating piece 120. FIG. (B) is a bottom view of the piezoelectric vibrating piece 120. （ａ）は、図３（ａ）及び図３（ｂ）のＢ－Ｂ断面図である。　（ｂ）は、圧電振動片１２０の部分断面図である。(A) is a BB cross-sectional view of FIGS. 3 (a) and 3 (b). (B) is a partial cross-sectional view of the piezoelectric vibrating piece 120. 圧電デバイス１００の部分断面図である。1 is a partial cross-sectional view of a piezoelectric device 100. FIG. （ａ）は、圧電振動片２２０の下面図である。　（ｂ）は、圧電デバイス２００の部分断面図である。FIG. 6A is a bottom view of the piezoelectric vibrating piece 220. FIG. (B) is a partial cross-sectional view of the piezoelectric device 200. （ａ）は、圧電振動片３２０の下面図である。　（ｂ）は、圧電デバイス３００の部分断面図である。FIG. 6A is a bottom view of the piezoelectric vibrating piece 320. FIG. (B) is a partial cross-sectional view of the piezoelectric device 300. （ａ）は、圧電振動片４２０の上面図である。　（ｂ）は、圧電デバイス４００の部分断面図である。FIG. 6A is a top view of the piezoelectric vibrating piece 420. FIG. (B) is a partial cross-sectional view of the piezoelectric device 400. 圧電デバイス５００の部分断面図である。2 is a partial cross-sectional view of a piezoelectric device 500. FIG.
　以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、本発明の範囲は以下の説明において特に本発明を限定する旨の記載がない限り、これらの形態に限られるものではない。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the scope of the present invention is not limited to these forms unless otherwise specified in the following description.
（第１実施形態）
＜圧電デバイス１００の構成＞
　図１は、圧電デバイス１００の分解斜視図である。圧電デバイス１００は図１に示される通り、ベース板１４０と、圧電振動片１２０と、リッド板１１０とが積層された構成になっている。圧電振動片１２０には、例えばＡＴカットの水晶振動片が用いられる。ＡＴカットの水晶振動片は、主面（ＸＺ面）が結晶軸（ＸＹＺ）のＸ軸を中心としてＺ軸からＹ軸方向に３５度１５分傾斜されている。以下の説明では、ＡＴカットの水晶振動片の軸方向を基準とし、傾斜された新たな軸をＹ’軸及びＺ’軸として用いる。すなわち、圧電デバイス１００において、圧電デバイス１００の長手方向をＸ軸方向、圧電デバイス１００の高さ方向をＹ’軸方向、Ｘ軸方向及びＹ’軸方向に垂直な方向をＺ’軸方向として説明する。 (First embodiment)
<Configuration of Piezoelectric Device 100>
FIG. 1 is an exploded perspective view of the piezoelectric device 100. As shown in FIG. 1, the piezoelectric device 100 has a configuration in which a base plate 140, a piezoelectric vibrating piece 120, and a lid plate 110 are laminated. As the piezoelectric vibrating piece 120, for example, an AT-cut crystal vibrating piece is used. The AT-cut quartz crystal resonator element has a main surface (XZ plane) inclined at 35 degrees 15 minutes from the Z axis in the Y axis direction around the X axis of the crystal axis (XYZ). In the following description, the new axes tilted with respect to the axial direction of the AT-cut quartz crystal vibrating piece are used as the Y ′ axis and the Z ′ axis. That is, in the piezoelectric device 100, the longitudinal direction of the piezoelectric device 100 is defined as the X-axis direction, the height direction of the piezoelectric device 100 is defined as the Y′-axis direction, and the direction perpendicular to the X-axis direction and the Y′-axis direction is described as the Z′-axis direction. To do.
　圧電振動片１２０は、所定の周波数で振動する矩形形状の振動部１２４を有する。振動部１２４の外側には、振動部１２４と離間して振動部１２４を囲む枠部１２２が設けられる。振動部１２４と枠部１２２とは、振動部１２４の－Ｘ軸側から－Ｘ軸方向に伸びて枠部１２２に到達する連結部１２６によって、接続される。 The piezoelectric vibrating piece 120 has a rectangular vibrating portion 124 that vibrates at a predetermined frequency. A frame portion 122 is provided outside the vibrating portion 124 so as to be separated from the vibrating portion 124 and surround the vibrating portion 124. The vibrating portion 124 and the frame portion 122 are connected by a connecting portion 126 that extends in the −X axis direction from the −X axis side of the vibrating portion 124 and reaches the frame portion 122.
　振動部１２４の両主面である＋Ｙ’軸側の面及び－Ｙ’軸側の面には、図１に示される通り、互いに対向する励振電極１２８が形成される。また、各励振電極１２８からは、連結部１２６を介して枠部１２２に引出電極１３０が引き出されている。引出電極１３０は、主に連結部１２６及び枠部１２２の＋Ｙ’軸側の面に形成される引出電極１３０ａと、枠部１２２の－Ｙ’軸側の面に形成される引出電極１３０ｂと、により構成される。 As shown in FIG. 1, excitation electrodes 128 facing each other are formed on the surfaces on the + Y′-axis side and the surface on the −Y′-axis side that are both main surfaces of the vibration part 124. In addition, from each excitation electrode 128, an extraction electrode 130 is drawn out to the frame portion 122 via the connecting portion 126. The extraction electrode 130 includes an extraction electrode 130a mainly formed on the surface at the + Y′-axis side of the coupling portion 126 and the frame portion 122; an extraction electrode 130b formed on the surface at the −Y′-axis side of the frame portion 122; Consists of.
　ベース板１４０は平板状に形成され、枠部１２２の－Ｙ’軸側の面に接合される。ベース板１４０は振動部１２４に対向するように配置される。ベース板１４０はガラス又は水晶等を基材として形成される。また、ベース板１４０の－Ｘ軸側の＋Ｚ’軸側及び＋Ｘ軸側の－Ｚ’軸側の角には、ベース板１４０の角が切り取られるように形成される切欠き部１４８が形成されている。ベース板１４０には電極が形成されるが、図１では示されていない。 The base plate 140 is formed in a flat plate shape and joined to the surface of the frame portion 122 on the −Y′-axis side. The base plate 140 is disposed so as to face the vibration part 124. The base plate 140 is formed using glass or quartz as a base material. In addition, notches 148 formed so that the corners of the base plate 140 are cut off are formed at the corners of the base plate 140 on the + Z ′ axis side on the −X axis side and the −Z ′ axis side on the + X axis side. ing. Electrodes are formed on the base plate 140 but are not shown in FIG.
　リッド板１１０は平板状に形成され、枠部１２２の＋Ｙ’軸側の面に接合される。リッド板１１０は振動部１２４に対向するように配置される。リッド板１１０はガラス又は水晶等で形成される。 The lid plate 110 is formed in a flat plate shape and joined to the surface on the + Y′-axis side of the frame portion 122. The lid plate 110 is disposed so as to face the vibrating portion 124. The lid plate 110 is made of glass or quartz.
　図２は、図１のＡ－Ａ断面図である。リッド板１１０と枠部１２２とは、ポリイミド等の樹脂接着剤又は低融点ガラス等の非導電性の接合材１５１で接合される。また、ベース板１４０と枠部１２２とに関しても接合材１５１で接合される。こうして振動部１２４は、リッド板１１０、枠部１２２、及びベース板１４０で囲まれたキャビティ１０１に密閉封入される。振動部１２４は、圧電デバイス１００の周波数を調整するため及び振動部１２４がリッド板１１０及びベース板１４０に接触しないように、枠部１２２よりも薄く形成されている。 FIG. 2 is a cross-sectional view taken along the line AA in FIG. The lid plate 110 and the frame portion 122 are bonded together by a non-conductive bonding material 151 such as a resin adhesive such as polyimide or low-melting glass. Further, the base plate 140 and the frame portion 122 are also bonded by the bonding material 151. In this way, the vibrating portion 124 is hermetically sealed in the cavity 101 surrounded by the lid plate 110, the frame portion 122, and the base plate 140. The vibrating portion 124 is formed thinner than the frame portion 122 in order to adjust the frequency of the piezoelectric device 100 and so that the vibrating portion 124 does not contact the lid plate 110 and the base plate 140.
　ベース板１４０の－Ｙ’軸側の面には一対の実装端子１４２が形成される。また、切欠き部１４８の側面には切欠き部電極１４４が形成され、引出電極１３０ｂに接続されるように端部電極１４６が形成されている。実装端子１４２の一方はベース板１４０の＋Ｘ軸側に形成され、実装端子１４２の他方はベース板１４０の－Ｘ軸側に形成される。それぞれの実装端子１４２は切欠き部１４８まで伸びて切欠き部電極１４４に接続される。また、切欠き部電極１４４は、枠部１２２の－Ｙ’軸側の面に伸びて端部電極１４６に接続される。これにより、実装端子１４２は、切欠き部電極１４４、端部電極１４６、及び引出電極１３０を介して励振電極１２８に電気的に接続される。 A pair of mounting terminals 142 are formed on the surface of the base plate 140 on the −Y′-axis side. Further, a notch electrode 144 is formed on the side surface of the notch 148, and an end electrode 146 is formed so as to be connected to the extraction electrode 130b. One of the mounting terminals 142 is formed on the + X axis side of the base plate 140, and the other of the mounting terminals 142 is formed on the −X axis side of the base plate 140. Each mounting terminal 142 extends to the notch 148 and is connected to the notch electrode 144. Further, the notch electrode 144 extends to the surface on the −Y′-axis side of the frame portion 122 and is connected to the end electrode 146. Thereby, the mounting terminal 142 is electrically connected to the excitation electrode 128 via the notch electrode 144, the end electrode 146, and the extraction electrode 130.
　図３（ａ）は、圧電振動片１２０の上面図である。圧電振動片１２０には、振動部１２４と枠部１２２との間に圧電振動片１２０をＹ’軸方向に貫通する貫通溝１３２が形成されている。また、振動部１２４と枠部１２２とは連結部１２６を介して接続されている。振動部１２４には励振電極１２８が形成されており、＋Ｙ’軸側の面に形成された励振電極１２８からは連結部１２６を介して枠部１２２に引出電極１３０ａが引き出されている。引出電極１３０ａは、貫通溝１３２の側面１３４を介して枠部１２２の－Ｙ’軸側の面に引き出されている。 FIG. 3A is a top view of the piezoelectric vibrating piece 120. In the piezoelectric vibrating piece 120, a through groove 132 that penetrates the piezoelectric vibrating piece 120 in the Y′-axis direction is formed between the vibrating portion 124 and the frame portion 122. In addition, the vibration part 124 and the frame part 122 are connected via a connecting part 126. An excitation electrode 128 is formed on the vibrating portion 124, and an extraction electrode 130 a is drawn from the excitation electrode 128 formed on the surface on the + Y′-axis side to the frame portion 122 via the connecting portion 126. The extraction electrode 130 a is extracted to the surface on the −Y′-axis side of the frame portion 122 through the side surface 134 of the through groove 132.
　図３（ｂ）は、圧電振動片１２０の下面図である。振動部１２４の－Ｙ’軸側の面に形成された励振電極１２８からは、引出電極１３０ａが引き出されている。引出電極１３０ａは、振動部１２４の－Ｙ’軸側の面の励振電極１２８から－Ｘ軸方向に伸び、枠部１２２の－Ｙ’軸側の面に形成される引出電極１３０ｂに接続される。引出電極１３０ｂは、さらに枠部１２２の－Ｘ軸側及び－Ｚ’軸側の部分を通って、枠部１２２の－Ｙ’軸側の面であって、－Ｚ’軸側かつ＋Ｘ軸側の角部まで伸びる。また、振動部１２４の＋Ｙ’軸側の面に形成された励振電極１２８から引き出される引出電極１３０ａは、貫通溝１３２の側面１３４を介して枠部１２２の－Ｙ’軸側の面の＋Ｚ’軸側かつ－Ｘ軸側の角部に形成される引出電極１３０ｂに接続される。 FIG. 3B is a bottom view of the piezoelectric vibrating piece 120. An extraction electrode 130 a is extracted from the excitation electrode 128 formed on the surface at the −Y′-axis side of the vibration unit 124. The extraction electrode 130a extends from the excitation electrode 128 on the −Y′-axis side surface of the vibrating portion 124 in the −X-axis direction, and is connected to the extraction electrode 130b formed on the −Y′-axis side surface of the frame portion 122. . The extraction electrode 130b further passes through the −X′-axis side and −Z′-axis side portions of the frame portion 122, and is a surface on the −Y′-axis side of the frame portion 122, on the −Z′-axis side and the + X-axis side. Extends to the corner. In addition, the extraction electrode 130 a that is extracted from the excitation electrode 128 formed on the surface on the + Y′-axis side of the vibrating portion 124 is + Z ′ on the surface on the −Y′-axis side of the frame portion 122 through the side surface 134 of the through groove 132. It is connected to an extraction electrode 130b formed at the corner on the axis side and on the −X axis side.
　図４（ａ）は、図３（ａ）及び図３（ｂ）のＢ－Ｂ断面図である。励振電極１２８及び引出電極１３０ａは、スパッタ又は蒸着等により形成される電極膜１９０により構成されている。引出電極１３０ｂも励振電極１２８及び引出電極１３０ａと同様の電極膜１９０を有するが、さらにその表面に酸化クロム（Ｃｒ２Ｏ３）膜１９１Ｄが形成される。このような酸化クロム（Ｃｒ２Ｏ３）膜１９１Ｄは、例えば電極膜１９０を形成した後に圧電
振動片１２０の－Ｙ’軸側の面の全面にクロム（Ｃｒ）膜を形成し、枠部１２２以外のクロム（Ｃｒ）膜を除去した後に、枠部１２２に形成されるクロム（Ｃｒ）膜を酸化させることにより形成される。クロム（Ｃｒ）膜の酸化はクロム（Ｃｒ）膜を大気中に開放することにより行われる。 FIG. 4A is a cross-sectional view taken along line BB in FIGS. 3A and 3B. The excitation electrode 128 and the extraction electrode 130a are configured by an electrode film 190 formed by sputtering or vapor deposition. The extraction electrode 130b also has the same electrode film 190 as the excitation electrode 128 and the extraction electrode 130a, but a chromium oxide (Cr2O3) film 191D is further formed on the surface thereof. Such a chromium oxide (Cr 2 O 3) film 191 D is formed by forming a chromium (Cr) film on the entire surface of the piezoelectric vibrating piece 120 on the −Y′-axis side after forming the electrode film 190, for example. After the (Cr) film is removed, the chromium (Cr) film formed on the frame portion 122 is oxidized. The oxidation of the chromium (Cr) film is performed by opening the chromium (Cr) film to the atmosphere.
　図４（ｂ）は、圧電振動片１２０の部分断面図である。図４（ｂ）は図４（ａ）の点線１８２で囲まれた部分の断面が示されている。電極膜１９０は、例えば、ベース板１４０の基材に接する層である第１層１９１Ａ、当該第１層１９１Ａの表面に形成される第２層１９１Ｂ、及び当該第２層１９１Ｂの表面に形成される第３層１９１Ｃの３つの層により形成される。第１層１９１Ａはクロム（Ｃｒ）膜の層として形成され、第２層１９１Ｂはニッケル（Ｎｉ）及びタングステン（Ｗ）の合金であるニッケルタングステン（ＮｉＷ）膜の層として形成され、第３層１９１Ｃは金（Ａｕ）膜の層として形成される。枠部１２２の－Ｙ’軸側の面に形成される引出電極１３０ｂでは電極膜１９０の表面に、さらに酸化クロム（Ｃｒ２Ｏ３）膜１９１Ｄが形成される。 FIG. 4B is a partial cross-sectional view of the piezoelectric vibrating piece 120. FIG. 4B shows a cross section of a portion surrounded by a dotted line 182 in FIG. For example, the electrode film 190 is formed on the surface of the first layer 191A that is a layer in contact with the base material of the base plate 140, the second layer 191B formed on the surface of the first layer 191A, and the surface of the second layer 191B. The third layer 191C is formed of three layers. The first layer 191A is formed as a layer of chromium (Cr) film, the second layer 191B is formed as a layer of nickel tungsten (NiW) film which is an alloy of nickel (Ni) and tungsten (W), and the third layer 191C. Is formed as a layer of gold (Au) film. In the extraction electrode 130 b formed on the surface of the frame portion 122 on the −Y′-axis side, a chromium oxide (Cr 2 O 3) film 191 D is further formed on the surface of the electrode film 190.
　図５は、圧電デバイス１００の部分断面図である。図５は、図２の点線１８１で囲まれる領域の部分断面が示されている。また、図５は、圧電デバイス１００がプリント基板１６０に実装された状態の部分断面として示されている。プリント基板１６０の＋Ｙ’軸側の面には電極１６１が形成されており、圧電デバイス１００はハンダ１５２を介して電極１６１に実装される。 FIG. 5 is a partial cross-sectional view of the piezoelectric device 100. FIG. 5 shows a partial cross section of a region surrounded by a dotted line 181 in FIG. FIG. 5 is shown as a partial cross-section in a state where the piezoelectric device 100 is mounted on the printed circuit board 160. An electrode 161 is formed on the surface on the + Y′-axis side of the printed circuit board 160, and the piezoelectric device 100 is mounted on the electrode 161 via the solder 152.
　圧電デバイス１００に形成される実装端子１４２、切欠き部電極１４４、及び端部電極１４６は、スパッタなどで形成されるスパッタ膜１９２Ａと、スパッタ膜１９２Ａの表面に無電解メッキで形成される無電解メッキ膜１９２Ｂと、により形成される。スパッタ膜１９２Ａは、例えば、ベース板１４０の基材の表面に形成されるクロム（Ｃｒ）層、クロム（Ｃｒ）層の表面に形成されるニッケルタングステン（ＮｉＷ）層、ニッケルタングステン（ＮｉＷ）層の表面に形成される金（Ａｕ）層の３層により形成される。また、無電解メッキ膜１９２Ｂは、例えば、スパッタ膜１９２Ａの表面に形成されるニッケル（Ｎｉ）層及びニッケル（Ｎｉ）層の表面に形成される金（Ａｕ）層の２層により形成される。実装端子１４２、切欠き部電極１４４、及び端部電極１４６は、無電解メッキ膜１９２Ｂを含んで形成されることで全体として厚く形成され、これにより、実装端子１４２、切欠き部電極１４４、及び端部電極１４６の断線が防止され、導通が確保される。 The mounting terminal 142, the notch electrode 144, and the end electrode 146 formed on the piezoelectric device 100 are a sputtered film 192A formed by sputtering or the like, and an electroless plating formed on the surface of the sputtered film 192A. And a plating film 192B. The sputtered film 192A includes, for example, a chromium (Cr) layer formed on the surface of the base material of the base plate 140, a nickel tungsten (NiW) layer formed on the surface of the chromium (Cr) layer, and a nickel tungsten (NiW) layer. It is formed by three layers of gold (Au) layers formed on the surface. The electroless plating film 192B is formed of, for example, two layers of a nickel (Ni) layer formed on the surface of the sputtered film 192A and a gold (Au) layer formed on the surface of the nickel (Ni) layer. The mounting terminal 142, the notch electrode 144, and the end electrode 146 are formed to be thick as a whole by including the electroless plating film 192 </ b> B, whereby the mounting terminal 142, the notch electrode 144, The disconnection of the end electrode 146 is prevented, and conduction is ensured.
　また、引出電極１３０ｂでは、酸化クロム膜１９１Ｄの厚さＴ１が１０００オングストローム（Å）以下の厚さに形成されることが望ましい。厚さＴ１が１０００オングストローム（Å）以下であれば酸化クロム膜１９１Ｄの下層に形成される金（Ａｕ）層の金（Ａｕ）が酸化クロム膜１９１Ｄに拡散することなどにより酸化クロム膜１９１Ｄの電気導電性を保つことができる。しかし、厚さＴ１が１０００オングストローム（Å）より厚くなると電気抵抗が高くなり、引出電極１３０ｂと端部電極１４６との導通が妨げられる。 Further, in the extraction electrode 130b, it is desirable that the thickness T1 of the chromium oxide film 191D is formed to a thickness of 1000 angstroms (Å) or less. If the thickness T1 is 1000 angstroms (Å) or less, the gold (Au) of the gold (Au) layer formed in the lower layer of the chromium oxide film 191D diffuses into the chromium oxide film 191D. Conductivity can be maintained. However, when the thickness T1 is greater than 1000 angstroms (Å), the electrical resistance increases and the conduction between the extraction electrode 130b and the end electrode 146 is hindered.
　圧電デバイス１００が実装される場合には、ハンダ１５２は切欠き部電極１４４を這い上がり、端部電極１４６に到達する。ここで、ハンダ１５２は鉛（Ｐｂ）及びスズ（Ｓｎ）を主成分とした合金であり、ハンダ１５２の主成分であるスズ（Ｓｎ）は、金（Ａｕ）と合金を形成しやすい性質があることが知られている。そのため、スズ（Ｓｎ）と金（Ａｕ）とが接触した状態で加熱されると、スズ（Ｓｎ）は金（Ａｕ）を浸食する。 When the piezoelectric device 100 is mounted, the solder 152 scoops up the notch electrode 144 and reaches the end electrode 146. Here, the solder 152 is an alloy containing lead (Pb) and tin (Sn) as main components, and tin (Sn) as the main component of the solder 152 has a property of easily forming an alloy with gold (Au). It is known. Therefore, when heated in a state where tin (Sn) and gold (Au) are in contact, tin (Sn) erodes gold (Au).
　端部電極１４６ではスパッタ膜１９２Ａ又は無電解メッキ膜１９２Ｂにハンダ１５２の浸食が遅いクロム（Ｃｒ）層、ニッケルタングステン（ＮｉＷ）層、及びニッケル（Ｎｉ）層を有するため、端部電極１４６は、簡単にはハンダ１５２によって浸食されない。しかし、スパッタ膜１９２Ａ又は無電解メッキ膜１９２Ｂがそれぞれ金（Ａｕ）層を有すること及び電子機器の製造のために圧電デバイスを実装するプリント基板が複数回加熱されうること等により、ハンダ１５２のスズ（Ｓｎ）が端部電極１４６を浸食して引出電極に到達する可能性がある。引出電極に酸化クロム膜が形成されない従来の圧電デバイスでは、この様な場合、ハンダ１５２のスズ（Ｓｎ）が引出電極の金（Ａｕ）層を介して圧電振動片の励振電極に到達し、励振電極をも浸食することで圧電振動片の周波数をずらし、又は圧電振動片の発振を妨げる場合があった。 Since the end electrode 146 has a chromium (Cr) layer, a nickel tungsten (NiW) layer, and a nickel (Ni) layer in which the solder 152 is slowly eroded on the sputtered film 192A or the electroless plating film 192B, the end electrode 146 It is not easily eroded by the solder 152. However, since the sputtered film 192A or the electroless plated film 192B has a gold (Au) layer and the printed circuit board on which the piezoelectric device is mounted can be heated a plurality of times for the manufacture of electronic equipment, the tin of the solder 152 (Sn) may erode the end electrode 146 and reach the extraction electrode. In the conventional piezoelectric device in which the chromium oxide film is not formed on the extraction electrode, in such a case, tin (Sn) of the solder 152 reaches the excitation electrode of the piezoelectric vibrating piece via the gold (Au) layer of the extraction electrode, and excitation is performed. In some cases, the frequency of the piezoelectric vibrating piece is shifted or the oscillation of the piezoelectric vibrating piece is prevented by eroding the electrode.
　圧電デバイス１００では、端部電極１４６と引出電極１３０を構成する電極膜１９０との間に酸化クロム膜１９１Ｄが形成されている。酸化クロム（Ｃｒ２Ｏ３）の膜はスズ（Ｓｎ）の浸食を防ぐことが出来る不動態膜になり得るため、圧電デバイス１００では、酸化クロム膜１９１Ｄがスズ（Ｓｎ）の浸食を防ぐことにより、ハンダ１５２のスズ（Ｓｎ）が引出電極１３０の金（Ａｕ）層に到達することが防がれている。 In the piezoelectric device 100, a chromium oxide film 191 </ b> D is formed between the end electrode 146 and the electrode film 190 constituting the extraction electrode 130. Since the chromium oxide (Cr 2 O 3) film can be a passive film capable of preventing tin (Sn) erosion, in the piezoelectric device 100, the chromium oxide film 191 D prevents the tin (Sn) erosion, thereby preventing the solder 152. Of tin (Sn) is prevented from reaching the gold (Au) layer of the extraction electrode 130.
　また、従来の圧電デバイスにおいて、接合材１５１に低融点ガラスが使用される場合には、低融点ガラスと引出電極の最表面に形成される金（Ａｕ）層との接合が弱く、圧電振動片の枠部とベース板との接合強度が弱い場合があった。これにより、キャビティ１０１の密封が破れやすい場合があった。 Further, in the conventional piezoelectric device, when a low melting glass is used as the bonding material 151, the bonding between the low melting glass and the gold (Au) layer formed on the outermost surface of the extraction electrode is weak, and the piezoelectric vibrating piece In some cases, the bonding strength between the frame portion and the base plate was weak. Thereby, the sealing of the cavity 101 may be easily broken.
　低融点ガラスと酸化膜とは強く接合するため、圧電デバイス１００では、電極膜１９０の金（Ａｕ）層の表面に酸化クロム膜１９１Ｄが形成されることにより、引出電極１３０ｂと接合材１５１を構成する低融点ガラスとの接合強度が強くなる。そのため、圧電振動片１２０の枠部１２２とベース板１４０とが強く接合し、キャビティ１０１の密封が破れることが防がれている。 Since the low melting point glass and the oxide film are strongly bonded, the piezoelectric device 100 forms the chromium oxide film 191D on the surface of the gold (Au) layer of the electrode film 190, thereby forming the extraction electrode 130b and the bonding material 151. The bonding strength with the low melting point glass is increased. Therefore, the frame portion 122 of the piezoelectric vibrating piece 120 and the base plate 140 are strongly bonded to each other, and the sealing of the cavity 101 is prevented from being broken.
　また、ニッケルタングステン（ＮｉＷ）は、金（Ａｕ）に接触している状態で湿気（水）に触れると、湿気により浸食されやすい性質がある。そのため従来の圧電デバイスでは、圧電振動片のニッケルタングステン（ＮｉＷ）層が外気の湿気により浸食されて除去されてしまう場合があり、さらに、ニッケルタングステン（ＮｉＷ）層の除去と共に圧電振動片に形成されるクロム（Ｃｒ）層も除去されてしまう場合があった。この場合、枠部を形成する水晶との接合強度が弱い金（Ａｕ）層が枠部に直接接触することになるため、圧電デバイス内のキャビティの気密が確保できず、耐湿性が悪くなる場合があった。また、圧電振動片のクロム（Ｃｒ）層が除去されないようにクロム（Ｃｒ）層を厚く形成したとしても、クロム（Ｃｒ）層のクロム（Ｃｒ）がニッケルタングステン（ＮｉＷ）層に拡散することによりクロム（Ｃｒ）層の厚さが薄くなるためその効果が小さく、また、クロム（Ｃｒ）層を厚く形成する場合にはクリスタルインピーダンス（ＣＩ）が悪化するという問題が生じる。 Also, nickel tungsten (NiW) has the property of being easily eroded by moisture when it is in contact with gold (Au) and in contact with moisture (water). Therefore, in the conventional piezoelectric device, the nickel tungsten (NiW) layer of the piezoelectric vibrating piece may be eroded and removed by the moisture of the outside air, and further, the piezoelectric vibrating piece is formed along with the removal of the nickel tungsten (NiW) layer. In some cases, the chromium (Cr) layer is also removed. In this case, since the gold (Au) layer having weak bonding strength with the crystal forming the frame portion is in direct contact with the frame portion, the airtightness of the cavity in the piezoelectric device cannot be ensured, and the moisture resistance is deteriorated. was there. Even if the chromium (Cr) layer is formed thick so that the chromium (Cr) layer of the piezoelectric vibrating piece is not removed, the chromium (Cr) of the chromium (Cr) layer diffuses into the nickel tungsten (NiW) layer. Since the chromium (Cr) layer is thin, the effect is small, and when the chromium (Cr) layer is formed thick, there arises a problem that the crystal impedance (CI) is deteriorated.
　これに対して圧電デバイス１００では、第１層１９１Ａを構成するクロム（Ｃｒ）層の厚さをクリスタルインピーダンス（ＣＩ）が許容範囲内に収まる厚さに形成されても、酸化クロム（Ｃｒ２Ｏ３）膜１９１Ｄが第３層１９１Ｃを構成する金（Ａｕ）層、及び第２層１９１Ｂを構成するニッケルタングステン（ＮｉＷ）層を介して第１層１９１Ａを構成するクロム（Ｃｒ）層にまで拡散することにより第１層１９１Ａを構成するクロム（Ｃｒ）層の全てが除去されることを防ぐことができる。そのため、圧電デバイス１００では、第３層１９１Ｃを構成する金（Ａｕ）層が枠部１２２に直接接触することが防がれ、キャビティ１０１内の気密を確保でき、耐湿性が悪化することを防ぐことができる。 On the other hand, in the piezoelectric device 100, even if the thickness of the chromium (Cr) layer constituting the first layer 191A is formed so that the crystal impedance (CI) is within an allowable range, the chromium oxide (Cr2O3) film is formed. 191D diffuses to the chromium (Cr) layer constituting the first layer 191A via the gold (Au) layer constituting the third layer 191C and the nickel tungsten (NiW) layer constituting the second layer 191B. It is possible to prevent all of the chromium (Cr) layer constituting the first layer 191A from being removed. Therefore, in the piezoelectric device 100, the gold (Au) layer constituting the third layer 191C is prevented from coming into direct contact with the frame portion 122, airtightness in the cavity 101 can be secured, and moisture resistance is prevented from deteriorating. be able to.
（第２実施形態）
　圧電デバイスでは、引出電極又はベース板に形成される電極を様々な形状又は構成に形成することができる。以下に、引出電極又はベース板に形成される電極が圧電デバイス１００とは異なる圧電デバイス１００の変形例を示す。また、以下の実施形態では、第１実施形態と同様の部分については第１実施形態と同様の符号を付してその説明を省略する。 (Second Embodiment)
In the piezoelectric device, the extraction electrode or the electrode formed on the base plate can be formed in various shapes or configurations. Hereinafter, modified examples of the piezoelectric device 100 in which the electrode formed on the extraction electrode or the base plate is different from the piezoelectric device 100 will be described. In the following embodiments, the same parts as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and the description thereof is omitted.
＜圧電デバイス２００の構成＞
　図６（ａ）は、圧電振動片２２０の下面図である。圧電振動片２２０は、圧電振動片１２０（図３（ｂ）参照）において、枠部１２２の－Ｙ’軸側の面に引出電極１３０ｂの代わりに引出電極２３０ｂが形成されている。これ以外の圧電振動片２２０の構成は圧電振動片１２０と同様である。引出電極２３０ｂでは、電極膜１９０が枠部１２２の－Ｙ’軸側の面の最外周に接しないように形成されている。また、電極膜１９０の表面には酸化クロム膜１９１Ｄが形成されるが、酸化クロム膜１９１Ｄは枠部１２２の－Ｙ’軸側の面の最外周に接するように形成されている。 <Configuration of Piezoelectric Device 200>
FIG. 6A is a bottom view of the piezoelectric vibrating piece 220. In the piezoelectric vibrating piece 220, in the piezoelectric vibrating piece 120 (see FIG. 3B), an extraction electrode 230b is formed on the surface of the frame portion 122 on the −Y′-axis side instead of the extraction electrode 130b. The other configuration of the piezoelectric vibrating piece 220 is the same as that of the piezoelectric vibrating piece 120. In the extraction electrode 230b, the electrode film 190 is formed so as not to contact the outermost periphery of the surface on the −Y′-axis side of the frame portion 122. A chromium oxide film 191D is formed on the surface of the electrode film 190. The chromium oxide film 191D is formed so as to be in contact with the outermost periphery of the surface on the −Y′-axis side of the frame portion 122.
　図６（ｂ）は、圧電デバイス２００の部分断面図である。圧電デバイス２００は主に、ベース板１４０と、圧電振動片２２０と、リッド板１１０と、により構成されている。圧電デバイス２００では、圧電デバイス１００において引出電極１３０ｂの代わりに引出電極２３０ｂが形成され、端部電極１４６の代わりに端部電極２４６が形成される。これ以外の圧電デバイス２００の構成は圧電デバイス１００と同様である。また、図６（ｂ）では、図５と同様の部分に相当する圧電デバイス２００の部分断面図が示されている。 FIG. 6B is a partial cross-sectional view of the piezoelectric device 200. The piezoelectric device 200 is mainly composed of a base plate 140, a piezoelectric vibrating piece 220, and a lid plate 110. In the piezoelectric device 200, the extraction electrode 230 b is formed instead of the extraction electrode 130 b in the piezoelectric device 100, and the end electrode 246 is formed instead of the end electrode 146. Other configurations of the piezoelectric device 200 are the same as those of the piezoelectric device 100. FIG. 6B shows a partial cross-sectional view of the piezoelectric device 200 corresponding to the same part as in FIG.
　圧電デバイス２００の引出電極２３０ｂは、図６（ｂ）に示されるように、電極膜１９０が枠部１２２の－Ｙ’軸側の面の外側端部にまで形成されておらず、酸化クロム膜１９１Ｄのみが枠部１２２の－Ｙ’軸側の面の外側端部にまで形成されている。これにより、引出電極２３０ｂでは酸化クロム膜１９１Ｄが電極膜１９０の側面をも覆うように形成される。また、端部電極２４６は、引出電極２３０ｂの酸化クロム膜１９１Ｄの表面に接合するように形成され、端部電極１４６と同様にスパッタ膜１９２Ａ及び無電解メッキ膜１９２Ｂにより構成される。 As shown in FIG. 6B, the extraction electrode 230b of the piezoelectric device 200 is not formed with the electrode film 190 up to the outer end portion of the surface on the −Y′-axis side of the frame portion 122. Only 191D is formed up to the outer end portion of the surface of the frame portion 122 on the −Y′-axis side. Thereby, in the extraction electrode 230b, the chromium oxide film 191D is formed so as to cover the side surface of the electrode film 190. Further, the end electrode 246 is formed so as to be bonded to the surface of the chromium oxide film 191D of the extraction electrode 230b, and is composed of a sputtered film 192A and an electroless plating film 192B, like the end electrode 146.
　引出電極の金（Ａｕ）層が圧電デバイスの表面に露出する圧電デバイスでは、引出電極の金（Ａｕ）層にハンダ１５２が付着した場合にハンダ１５２のスズ（Ｓｎ）が引出電極の金（Ａｕ）層を介して圧電振動片の励振電極に到達し、励振電極をも浸食することで圧電振動片の周波数をずらし、又は圧電振動片の発振を妨げる場合がある。圧電デバイス２００では、圧電デバイス２００の表面に引出電極２３０ｂの金（Ａｕ）層が露出しない。これにより、ハンダ１５２が引出電極２３０ｂの金（Ａｕ）層に接触することが防がれている。 In the piezoelectric device in which the gold (Au) layer of the extraction electrode is exposed on the surface of the piezoelectric device, when the solder 152 adheres to the gold (Au) layer of the extraction electrode, the tin (Sn) of the solder 152 becomes the gold (Au of the extraction electrode) In some cases, the frequency of the piezoelectric vibrating piece is shifted by reaching the excitation electrode of the piezoelectric vibrating piece through the layer and eroding the excitation electrode, or the oscillation of the piezoelectric vibrating piece is hindered. In the piezoelectric device 200, the gold (Au) layer of the extraction electrode 230 b is not exposed on the surface of the piezoelectric device 200. This prevents the solder 152 from contacting the gold (Au) layer of the extraction electrode 230b.
＜圧電デバイス３００の構成＞
　図７（ａ）は、圧電振動片３２０の下面図である。圧電振動片３２０は、圧電振動片１２０（図３（ｂ）参照）において、枠部１２２の－Ｙ’軸側の面に引出電極１３０ｂの代わりに引出電極３３０ｂが形成されている。これ以外の圧電振動片３２０の構成は圧電振動片１２０と同様である。引出電極３３０ｂは、引出電極１３０ｂと同様に電極膜１９０と電極膜１９０の表面に形成される酸化クロム膜１９１Ｄとにより構成されている。しかし、引出電極３３０ｂの酸化クロム膜１９１Ｄは、枠部１２２の－Ｙ’軸側の面の電極膜１９０が形成されていない領域にも形成されている。酸化クロム膜１９１Ｄは枠部１２２の－Ｙ’軸側の面をほぼ覆うように形成されるが、＋Ｙ’軸側の面の励振電極１２８に接続される引出電極３３０ｂと＋Ｙ’軸側の面の励振電極１２８に接続される引出電極３３０ｂとの間の絶縁性を保つために、互いの引出電極３３０ｂの間に酸化クロム膜１９１Ｄが形成されない絶縁領域１８３ａ及び絶縁領域１８３ｂが形成される。 <Configuration of Piezoelectric Device 300>
FIG. 7A is a bottom view of the piezoelectric vibrating piece 320. In the piezoelectric vibrating piece 320, in the piezoelectric vibrating piece 120 (see FIG. 3B), an extraction electrode 330b is formed on the surface of the frame portion 122 on the −Y′-axis side instead of the extraction electrode 130b. The other configuration of the piezoelectric vibrating piece 320 is the same as that of the piezoelectric vibrating piece 120. Similar to the extraction electrode 130b, the extraction electrode 330b includes an electrode film 190 and a chromium oxide film 191D formed on the surface of the electrode film 190. However, the chromium oxide film 191D of the extraction electrode 330b is also formed in a region where the electrode film 190 is not formed on the surface on the −Y′-axis side of the frame portion 122. The chromium oxide film 191D is formed so as to substantially cover the surface on the −Y′-axis side of the frame portion 122, but the extraction electrode 330b connected to the excitation electrode 128 on the surface on the + Y′-axis side and the surface on the + Y′-axis side In order to maintain insulation between the extraction electrode 330b connected to the excitation electrode 128, an insulating region 183a and an insulating region 183b where the chromium oxide film 191D is not formed are formed between the extraction electrodes 330b.
　絶縁領域１８３ａ及び絶縁領域１８３ｂは、枠部１２２の－Ｙ’軸側の面の内側の辺と外側の辺とを繋ぐように形成されている。これにより、各引出電極３３０ｂ間の絶縁が保たれる。また、絶縁領域１８３ａ及び絶縁領域１８３ｂにおける枠部１２２の－Ｙ’軸側の面の内側の辺と外側の辺との間の経路の長さは、枠部１２２の－Ｙ’軸側の面の内側の辺と外側の辺との幅よりも長く形成されている。図７（ａ）では、絶縁領域１８３ａが枠部１２２の－Ｙ’軸側の面の＋Ｚ’軸側の中央付近、絶縁領域１８３ｂが枠部１２２の－Ｙ’軸側の面の－Ｘ軸側の中央付近に形成されているが、絶縁領域１８３ａ及び絶縁領域１８３ｂの形成される位置はこの位置に限られない。 The insulating region 183a and the insulating region 183b are formed so as to connect the inner side and the outer side of the surface of the frame portion 122 on the −Y′-axis side. Thereby, the insulation between each extraction electrode 330b is maintained. The length of the path between the inner side and the outer side of the surface on the −Y′-axis side of the frame portion 122 in the insulating region 183a and the insulating region 183b is the surface on the −Y′-axis side of the frame portion 122. It is formed longer than the width between the inner side and the outer side. In FIG. 7A, the insulating region 183a is near the center on the + Z′-axis side of the surface on the −Y′-axis side of the frame portion 122, and the insulating region 183b is the −X-axis on the surface on the −Y′-axis side of the frame portion 122. However, the positions where the insulating regions 183a and 183b are formed are not limited to these positions.
　図７（ｂ）は、圧電デバイス３００の部分断面図である。圧電デバイス３００は主に、ベース板１４０と、圧電振動片３２０と、リッド板１１０と、により構成されている。図７（ｂ）では、圧電デバイス３００の図７（ａ）のＣ－Ｃ断面を含む部分断面図が示されており、リッド板１１０が省略されている。酸化クロム膜１９１Ｄの厚さＴ１は、１０００オングストローム（Å）又はそれ以下となるように形成される。また、ベース板１４０と枠部１２２との間の距離Ｔ２は、例えば３００μｍに形成される。 FIG. 7B is a partial cross-sectional view of the piezoelectric device 300. The piezoelectric device 300 is mainly configured by a base plate 140, a piezoelectric vibrating piece 320, and a lid plate 110. FIG. 7B shows a partial cross-sectional view of the piezoelectric device 300 including the CC cross section of FIG. 7A, and the lid plate 110 is omitted. A thickness T1 of the chromium oxide film 191D is formed to be 1000 angstroms (Å) or less. Further, the distance T2 between the base plate 140 and the frame portion 122 is, for example, 300 μm.
　圧電デバイスでは、接合材１５１として用いられる低融点ガラスを水晶により形成される枠部１２２に直接接合させる場合には、低融点ガラスと枠部１２２との間の接合面を介して湿気等がキャビティ１０１内に入り、キャビティ１０１内の湿度が上昇し易い。これにより、圧電振動片の周波数変化が起こり易くなるという問題が生じる。 In the piezoelectric device, when the low-melting glass used as the bonding material 151 is directly bonded to the frame portion 122 formed of quartz, moisture and the like are cavities through the bonding surface between the low-melting glass and the frame portion 122. The humidity inside the cavity 101 is likely to rise. This causes a problem that the frequency change of the piezoelectric vibrating piece is likely to occur.
　圧電デバイス３００では、図７（ａ）に示されるように、電極膜１９０が形成されない枠部１２２の－Ｙ’軸側の面の領域にも酸化クロム膜１９１Ｄが形成されることにより、接合材１５１として用いられる低融点ガラスと枠部１２２とが直接接合される領域が少なくなるように形成されている。低融点ガラスは水晶よりも酸化クロムと接合する方が接合強度が強いため、低融点ガラスと酸化クロムとが接合される領域では低融点ガラスと枠部１２２とが直接接合される領域よりも湿気を通し難くなる。そのため、圧電デバイス３００では、低融点ガラスと枠部１２２との間の接合面を介してキャビティ１０１に侵入する湿気等の量を減らすことができる。また、低融点ガラスと枠部１２２とが直接接合されている絶縁領域１８３ａ及び絶縁領域１８３ｂでは、キャビティ１０１の内外を繋ぐ経路の長さが枠部１２２の－Ｙ’軸側の面の内側の辺と外側の辺との幅よりも長く形成されることにより、低融点ガラスと枠部１２２との間の接合面を介してキャビティ１０１内に湿気等が侵入し難くなっている。これらのことにより、圧電デバイス３００では、圧電デバイス１００と同様に酸化クロム膜１９１Ｄが電極膜１９０を覆うことによりキャビティ１０１内の気密を確保して耐湿性の悪化を防ぐと共に、低融点ガラスと枠部１２２とが直接接合される領域が少なくなるように形成されることでキャビティ１０１内の湿度が上昇して圧電振動片の周波数変化が起こる等の問題の発生が防がれている。 In the piezoelectric device 300, as shown in FIG. 7A, the chromium oxide film 191D is formed also in the region of the surface on the −Y′-axis side of the frame portion 122 where the electrode film 190 is not formed, whereby the bonding material The low melting point glass used as 151 and the frame portion 122 are formed so as to have a smaller area. Since the bonding strength of the low melting point glass is stronger than that of the quartz crystal than the quartz crystal, the region where the low melting point glass and the chromium oxide are bonded has higher moisture than the region where the low melting point glass and the frame portion 122 are directly bonded. It becomes difficult to pass. Therefore, in the piezoelectric device 300, the amount of moisture or the like that enters the cavity 101 via the bonding surface between the low melting point glass and the frame portion 122 can be reduced. Further, in the insulating region 183a and the insulating region 183b in which the low melting point glass and the frame portion 122 are directly bonded, the length of the path connecting the inside and the outside of the cavity 101 is the inner side of the surface on the −Y′-axis side of the frame portion 122. By being formed longer than the width between the side and the outer side, it is difficult for moisture or the like to enter the cavity 101 via the bonding surface between the low melting point glass and the frame portion 122. As a result, in the piezoelectric device 300, the chromium oxide film 191D covers the electrode film 190 in the same manner as the piezoelectric device 100, thereby ensuring airtightness in the cavity 101 and preventing deterioration of moisture resistance. Since the area where the portion 122 is directly joined is reduced, problems such as a change in the frequency of the piezoelectric vibrating piece due to an increase in the humidity in the cavity 101 are prevented.
＜圧電デバイス４００の構成＞
　図８（ａ）は、圧電振動片４２０の上面図である。圧電振動片４２０は、圧電振動片１２０（図３（ａ）参照）において、枠部１２２の＋Ｙ’軸側の面に引出電極１３０ａの代わりに引出電極４３０ａが形成されている。これ以外の圧電振動片４２０の構成は圧電振動片１２０と同様である。引出電極４３０ａは、引出電極１３０ａと同様に電極膜１９０を有するが、さらに電極膜１９０の表面を含む枠部１２２の＋Ｙ’軸側の面の全面に酸化クロム膜１９１Ｄが形成されることにより構成される。 <Configuration of Piezoelectric Device 400>
FIG. 8A is a top view of the piezoelectric vibrating piece 420. In the piezoelectric vibrating piece 420, in the piezoelectric vibrating piece 120 (see FIG. 3A), an extraction electrode 430a is formed on the surface of the frame portion 122 on the + Y′-axis side instead of the extraction electrode 130a. The other configuration of the piezoelectric vibrating piece 420 is the same as that of the piezoelectric vibrating piece 120. The extraction electrode 430a has an electrode film 190 similar to the extraction electrode 130a, but is configured by forming a chromium oxide film 191D on the entire surface on the + Y′-axis side of the frame portion 122 including the surface of the electrode film 190. Is done.
　図８（ｂ）は、圧電デバイス４００の部分断面図である。圧電デバイス４００は主に、ベース板１４０と、圧電振動片４２０と、リッド板１１０と、により構成されている。圧電デバイス４００では、圧電デバイス１００において引出電極１３０ａの代わりに引出電極４３０ａが形成される。これ以外の圧電デバイス４００の構成は圧電デバイス１００と同様である。また、図８（ｂ）では、図５と同様の部分に相当する圧電デバイス４００の部分断面図が示されている。 FIG. 8B is a partial cross-sectional view of the piezoelectric device 400. The piezoelectric device 400 mainly includes a base plate 140, a piezoelectric vibrating piece 420, and a lid plate 110. In the piezoelectric device 400, an extraction electrode 430 a is formed instead of the extraction electrode 130 a in the piezoelectric device 100. Other configurations of the piezoelectric device 400 are the same as those of the piezoelectric device 100. FIG. 8B shows a partial cross-sectional view of the piezoelectric device 400 corresponding to the same part as in FIG.
　従来では、電極膜１９０の第３層１９１Ｃの金（Ａｕ）膜に低融点ガラスが直接接合されていたが、金（Ａｕ）と低融点ガラスとは接合が弱いため、圧電振動片の枠部とベース板との接合強度が弱くなる場合があった。圧電デバイス４００では、電極膜１９０の金（Ａｕ）層の表面に酸化クロム膜１９１Ｄが形成されることにより、引出電極１３０ｂと接合材１５１を構成する低融点ガラスとの接合強度が強くなる。そのため、圧電振動片４２０の枠部１２２とベース板１４０とが強く接合し、キャビティ１０１の密封が破れることが防がれている。 Conventionally, the low melting point glass is directly bonded to the gold (Au) film of the third layer 191C of the electrode film 190, but since the bonding between the gold (Au) and the low melting point glass is weak, the frame portion of the piezoelectric vibrating piece. In some cases, the bonding strength between the base plate and the base plate becomes weak. In the piezoelectric device 400, by forming the chromium oxide film 191D on the surface of the gold (Au) layer of the electrode film 190, the bonding strength between the extraction electrode 130b and the low melting point glass constituting the bonding material 151 is increased. Therefore, the frame portion 122 of the piezoelectric vibrating piece 420 and the base plate 140 are strongly joined to prevent the cavity 101 from being broken.
＜圧電デバイス５００の構成＞
　図９は、圧電デバイス５００の部分断面図である。圧電デバイス５００は、圧電デバイス１００において実装端子１４２、切欠き部電極１４４、及び端部電極１４６の代わりに実装端子５４２、切欠き部電極５４４、及び端部電極５４６が形成された圧電デバイスである。実装端子５４２、切欠き部電極５４４、及び端部電極５４６は、スパッタ膜１９２Ａがスパッタ又は蒸着などにより形成され、スパッタ膜１９２Ａの表面にハンダ膜１９２Ｃが形成されている。ハンダ層１９２Ｃは、スパッタ層１９２Ａの表面にハンダを印刷することにより形成される。このハンダ膜の形成では、他にハンダ槽に浸すことによりハンダ膜を形成するＤＩＰ方式が考えられる。しかし、圧電デバイスはウエハに多数の圧電デバイスが形成された後にウエハを切断して個々の圧電デバイスが形成されるが、ＤＩＰ方式ではウエハにかかる熱衝撃が大きくなるため採用することができない。印刷によるハンダ膜の形成ではこの様な熱衝撃がウエハにかかることがないため好ましい。 <Configuration of Piezoelectric Device 500>
FIG. 9 is a partial cross-sectional view of the piezoelectric device 500. The piezoelectric device 500 is a piezoelectric device in which a mounting terminal 542, a notch electrode 544, and an end electrode 546 are formed instead of the mounting terminal 142, the notch electrode 144, and the end electrode 146 in the piezoelectric device 100. . The mounting terminal 542, the notch electrode 544, and the end electrode 546 have a sputtered film 192A formed by sputtering or vapor deposition, and a solder film 192C is formed on the surface of the sputtered film 192A. The solder layer 192C is formed by printing solder on the surface of the sputter layer 192A. In addition to the formation of this solder film, a DIP method in which the solder film is formed by immersing in a solder bath is conceivable. However, although a piezoelectric device is formed by forming a large number of piezoelectric devices on a wafer and then cutting the wafer to form individual piezoelectric devices, the DIP method cannot be employed because the thermal shock applied to the wafer increases. Forming a solder film by printing is preferable because such a thermal shock is not applied to the wafer.
　実装端子は、スパッタにより膜が形成されるが、スパッタによる膜のみでは導通保証が困難であるため、スパッタ膜の表面に無電解メッキが形成される。しかし、無電解メッキでは材料費及び工数がかかり、メッキの条件管理も厳しいという問題がある。圧電デバイス５００では、無電解メッキ膜を形成する代わりにハンダ印刷を行うことでハンダ膜１９２Ｃを形成し、実装端子の導通を確保している。また、圧電デバイス５００では無電解メッキの工程が無いことにより、無電解メッキの材料費等を削減することが出来るため好ましい。 The mounting terminal forms a film by sputtering, but it is difficult to guarantee conduction only by the film by sputtering, so electroless plating is formed on the surface of the sputtering film. However, there is a problem that electroless plating requires material costs and man-hours, and the plating condition management is severe. In the piezoelectric device 500, the solder film 192C is formed by performing solder printing instead of forming the electroless plating film, and the conduction of the mounting terminals is ensured. In addition, the piezoelectric device 500 is preferable because there is no electroless plating step, so that the material cost of the electroless plating can be reduced.
　以上、本発明の最適な実施形態について詳細に説明したが、当業者に明らかなように、本発明はその技術的範囲内において実施形態に様々な変更・変形を加えて実施することができる。また、各実施形態の特徴を様々に組み合わせて実施することができる。 As described above, the optimal embodiment of the present invention has been described in detail. However, as will be apparent to those skilled in the art, the present invention can be implemented with various modifications and variations within the technical scope thereof. Moreover, the features of each embodiment can be implemented in various combinations.
　また、上記の実施形態では、圧電振動片がＡＴカットの水晶であったが、Ｚカット又はＢＴカットなどの水晶を用いてもよい。また、圧電デバイスは水晶振動子であったが、発振回路を備えたＩＣを搭載した圧電発振器であってもよい。また、圧電振動片は水晶で形成されたが、水晶以外の圧電材料、例えばタンタル酸リチウム、ニオブ酸リチウム又は圧電セラミックを用いてもよい。 In the above embodiment, the piezoelectric vibrating piece is an AT-cut crystal, but a crystal such as a Z-cut or a BT-cut may be used. Further, although the piezoelectric device is a crystal resonator, it may be a piezoelectric oscillator equipped with an IC including an oscillation circuit. Moreover, although the piezoelectric vibrating piece is formed of quartz, a piezoelectric material other than quartz, for example, lithium tantalate, lithium niobate, or piezoelectric ceramic may be used.
　１００、２００、３００、４００、５００　…　圧電デバイス
　１０１　…　キャビティ
　１１０　…　リッド板
　１２０、２２０、３２０、４２０　…　圧電振動片
　１２２　…　枠部
　１２４　…　振動部
　１２６　…　連結部
　１２８　…　励振電極
　１３０、１３０ａ、１３０ｂ、２３０ｂ、３３０ｂ、４３０ａ　…　引出電極
　１３２　…　貫通溝
　１４０　…　ベース板
　１４２、５４２　…　実装端子
　１４４、５４４　…　切欠き部電極
　１４６、５４６　…　端部電極
　１４８　…　切欠き部
　１５１　…　接合材
　１５２　…　ハンダ
　１６０　…　プリント基板
　１６１　…　電極
　１８３ａ、１８３ｂ　…　絶縁領域
　１９０　…　電極膜
　１９１Ａ　…　第１層
　１９１Ｂ　…　第２層
　１９１Ｃ　…　第３層
　１９１Ｄ　…　酸化クロム膜
　１９２Ａ　…　スパッタ膜
　１９２Ｂ　…　無電解メッキ膜
　１９２Ｃ　…　ハンダ膜
　Ｔ１　…　酸化クロム膜１９１Ｄの厚さ
　Ｔ２　…　ベース板１４０と枠部１２２との間の距離
 
  DESCRIPTION OF SYMBOLS 100, 200, 300, 400, 500 ... Piezoelectric device 101 ... Cavity 110 ... Lid board 120, 220, 320, 420 ... Piezoelectric vibrating piece 122 ... Frame part 124 ... Vibrating part 126 ... Connection part 128 ... Excitation electrode 130, 130a, 130b, 230b, 330b, 430a ... Extraction electrode 132 ... Through groove 140 ... Base plate 142, 542 ... Mounting terminal 144, 544 ... Notch electrode 146, 546 ... End electrode 148 ... Notch 151 ... Bonding material 152 ... Solder 160 ... Printed circuit board 161 ... Electrodes 183a, 183b ... Insulating region 190 ... Electrode film 191A ... First layer 191B ... Second layer 191C ... Third layer 191D ... Chromium oxide film 192A ... Sputtered film 192B ... Electroless plated film 192C ... Solder film T1 ... Thickness of chromium oxide film 191D T2 ... Distance between base plate 140 and frame portion 122

Claims (6)

  1. 　第１主面と前記第１主面の反対側の第２主面とを有し、圧電材料により形成される圧電振動片であって、
    　所定の周波数で振動する振動部と、
    　前記振動部と離間して前記振動部の周りを囲む枠部と、
    　前記振動部と前記枠部とを連結する連結部と、を有し、
    　前記振動部の前記第１主面及び前記第２主面にそれぞれ励振電極が形成され、さらに前記各励振電極から前記枠部の前記第２主面にまではそれぞれ引出電極が引き出され、
    　前記枠部の前記第２主面に形成される前記引出電極が、最下層に形成されるクロム（Ｃｒ）膜と、前記クロム（Ｃｒ）膜の表面に形成されるニッケルタングステン（ＮｉＷ）膜と、前記ニッケルタングステン（ＮｉＷ）膜の表面に形成される金（Ａｕ）膜と、前記金（Ａｕ）膜の表面に形成される酸化クロム（Ｃｒ２Ｏ３）膜と、により形成される圧電振動片。     A piezoelectric vibrating piece having a first main surface and a second main surface opposite to the first main surface, and formed of a piezoelectric material,
    A vibrating part that vibrates at a predetermined frequency;
    A frame part that is spaced apart from the vibrating part and surrounds the vibrating part;
    A connecting portion that connects the vibrating portion and the frame portion;
    Excitation electrodes are respectively formed on the first main surface and the second main surface of the vibrating portion, and extraction electrodes are drawn from the respective excitation electrodes to the second main surface of the frame portion, respectively.
    The extraction electrode formed on the second main surface of the frame portion includes a chromium (Cr) film formed on a lowermost layer, a nickel tungsten (NiW) film formed on a surface of the chromium (Cr) film, A piezoelectric vibrating piece formed by a gold (Au) film formed on the surface of the nickel tungsten (NiW) film and a chromium oxide (Cr2O3) film formed on the surface of the gold (Au) film.
  2. 　前記枠部の前記第２主面には、一方の前記引出電極に形成される前記酸化クロム（Ｃｒ２Ｏ３）膜を含む第１の酸化クロム（Ｃｒ２Ｏ３）膜と、他方の前記引出電極に形成される前記酸化クロム（Ｃｒ２Ｏ３）膜を含む第２の酸化クロム（Ｃｒ２Ｏ３）膜と、前記第１の酸化クロム（Ｃｒ２Ｏ３）膜及び前記第２の酸化クロム（Ｃｒ２Ｏ３）膜の間に形成され前記枠部の前記第２主面の外周から内周へ伸びる絶縁領域と、が形成される請求項１に記載の圧電振動片。 On the second main surface of the frame portion, a first chromium oxide (Cr2O3) film including the chromium oxide (Cr2O3) film formed on one of the extraction electrodes and the other extraction electrode are formed. The second chromium oxide (Cr2O3) film including the chromium oxide (Cr2O3) film, and the first chromium oxide (Cr2O3) film and the second chromium oxide (Cr2O3) film are formed between the frame portion. The piezoelectric vibrating piece according to claim 1, wherein an insulating region extending from an outer periphery to an inner periphery of the second main surface is formed.
  3. 　前記絶縁領域は、前記枠部の前記外周から前記内周への幅よりも長く伸びる請求項２に記載の圧電振動片。 The piezoelectric vibrating piece according to claim 2, wherein the insulating region extends longer than a width from the outer periphery to the inner periphery of the frame portion.
  4. 　前記枠部の前記第１主面の全面に酸化クロム（Ｃｒ２Ｏ３）膜が形成される請求項１から請求項３のいずれか一項に記載の圧電振動片。 The piezoelectric vibrating piece according to any one of claims 1 to 3, wherein a chromium oxide (Cr2O3) film is formed on the entire surface of the first main surface of the frame portion.
  5. 　請求項１から請求項４のいずれか一項に記載の圧電振動片と、
    　前記枠部の前記第２主面に低融点ガラスにより接合され、前記枠部に接合される面とは反対側の面に実装端子が形成されるベース板と、
    　前記枠部の前記第１主面に低融点ガラスにより接合されるリッド板と、を有する圧電デバイス。     The piezoelectric vibrating piece according to any one of claims 1 to 4,
    A base plate that is joined to the second main surface of the frame portion by a low-melting glass, and a mounting terminal is formed on a surface opposite to the surface to be joined to the frame portion;
    And a lid plate bonded to the first main surface of the frame portion by a low melting point glass.
  6. 　前記ベース板の側面には前記ベース板の内側に凹む切欠き部が形成され、
    　前記実装端子は前記切欠き部に形成される側面電極を介して前記枠部の前記第２主面に形成される前記引出電極に電気的に接合され、
    　前記実装端子及び前記側面電極は、最下層にスパッタにより形成されるスパッタ膜と、前記スパッタ膜の表面にスクリーン印刷により印刷されるハンダ膜と、により形成される請求項５に記載の圧電デバイス。
          On the side surface of the base plate is formed a notch that is recessed inside the base plate,
    The mounting terminal is electrically joined to the extraction electrode formed on the second main surface of the frame portion via a side electrode formed on the notch portion,
    The piezoelectric device according to claim 5, wherein the mounting terminal and the side electrode are formed by a sputtered film formed by sputtering on a lowermost layer and a solder film printed by screen printing on a surface of the sputtered film.
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