WO2015186976A1 - 마이크로채널 공진기 및 그 제조방법 - Google Patents

마이크로채널 공진기 및 그 제조방법 Download PDF

Info

Publication number
WO2015186976A1
WO2015186976A1 PCT/KR2015/005590 KR2015005590W WO2015186976A1 WO 2015186976 A1 WO2015186976 A1 WO 2015186976A1 KR 2015005590 W KR2015005590 W KR 2015005590W WO 2015186976 A1 WO2015186976 A1 WO 2015186976A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
upper silicon
silicon layer
channel
microchannel
Prior art date
Application number
PCT/KR2015/005590
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
이정철
김주현
Original Assignee
서강대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서강대학교 산학협력단 filed Critical 서강대학교 산학협력단
Publication of WO2015186976A1 publication Critical patent/WO2015186976A1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01G—WEIGHING
    • G01G9/00—Methods of, or apparatus for, the determination of weight, not provided for in groups G01G1/00 - G01G7/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid

Definitions

  • the present invention relates to a microchannel resonator and a method of manufacturing the same, and to a microchannel resonator and a method of manufacturing the same, which can measure mass and properties of a target object by using a principle in which a resonance frequency changes according to the mass of a moving material.
  • NanoBioMems technology refers to intelligent and automated micromechanical medical and chemical devices that can instantly detect, measure, analyze, and diagnose the physical, chemical, and biological interactions of biomolecules.
  • microchannel resonant scale microbalance, microcantilever
  • the measuring principle of a conventional microchannel resonant balance is to create a hollow resonator and inject a liquid molecular sample of fluid into it.
  • the periphery of the resonator is surrounded by a vacuum space, but the fluid molecules in the liquid state are disposed inside the resonator.
  • the mass of the particles can be accurately measured by measuring the vibration frequency of the resonator when the particles move inside the resonator.
  • the existing microchannel resonant balance is not only very difficult to form, but also requires a sophisticated and complicated manufacturing process over several steps, making it difficult to manufacture.
  • a part to be a microchannel is previously formed on a silicon substrate, a complicated patterning and etching process of several steps is required to form a beam having a microchannel embedded cantilever structure.
  • the manufacturing is complicated and the manufacturing time increases.
  • the present invention provides a microchannel resonator and a method of manufacturing the same that can simplify the structure and manufacturing process.
  • the present invention provides a microchannel resonator and a method of manufacturing the same, forming a cavity channel in the laminated substrate and partially removing the periphery of the cavity channel to form a pipe-shaped microchannel structure. do.
  • the present invention also provides a microchannel resonator capable of forming a pipe-shaped microchannel structure under various conditions and shapes, and a method of manufacturing the same.
  • the present invention also provides a microchannel resonator and a method of manufacturing the same that can improve structural stability and reliability.
  • the present invention can reduce the manufacturing cost, and provides a microchannel resonator and a method of manufacturing the same that can be applied to various nanobiomes devices and applications.
  • a method of manufacturing a microchannel resonator capable of measuring the mass and characteristics of the target object by using the principle that the resonance frequency changes according to the mass of the moving material
  • a laminated substrate comprising a lower layer, a middle layer provided on top of the lower layer, and an upper silicon layer provided on top of the intermediate layer; Forming a cavity channel for resonating movement of a material moving to a predetermined depth inside the upper silicon layer; And partially removing the upper silicon layer and the intermediate layer corresponding to the periphery of the common channel, and partially removing the upper silicon layer and the intermediate layer, including the common channel therein, and resonating with respect to the laminated substrate.
  • Possible hollow micro channel structures are formed.
  • the upper silicon layer and the intermediate layer can be removed by a single removal process or a plurality of removal processes.
  • the upper silicon layer and the intermediate layer may be removed at once by a single etching process or may be separately removed by a plurality of etching processes.
  • partially removing the upper silicon layer and the intermediate layer corresponding to the periphery of the common channel may include removing the upper silicon layer and the intermediate layer to form a guide trench adjacent to the common channel, and using the guide trench. And partially removing the intermediate layer corresponding to the lower portion of the.
  • the common channel inside the top silicon layer can be formed in a variety of ways depending on the desired conditions and design specifications.
  • the forming of the common channel in the upper silicon layer may include forming a plurality of trenches on the upper silicon layer, and forming the common channel in the upper silicon layer using the plurality of trenches.
  • Trench for forming the common channel can be formed in various ways depending on the conditions required.
  • forming the trench may include patterning a first photoresist pattern on the upper silicon layer, first etching the surface of the upper silicon layer using the first photoresist pattern, and first photoresist.
  • the method may include removing the pattern, and the trench may be formed to have a predetermined depth during the first etching.
  • a common channel using a trench can be formed inside the upper silicon layer.
  • the laminated substrate on which the trench is formed is annealed, roughly water drops and As the upper opening of the trench is gradually narrowed and closed, the lower end of the trench is expanded. At this time, the lower ends of the trenches which are adjacent to each other are connected to each other, so that co-channels are formed inside the upper silicon layer cooperatively by adjacent trenches. Can be.
  • the trench formation conditions in consideration of the movement characteristics and vibration characteristics of the material moving along the cavity channel, it is possible to form the formation depth of the cavity channel up and down asymmetrically on the hollow micro-channel structure.
  • the depth of formation of the hollow channel may be controlled on the hollow microchannel structure by adjusting the diameter and the spacing of the trench in consideration of the movement characteristics and vibration characteristics of the material moving along the hollow channel.
  • the material of the lower layer and the middle layer can be appropriately changed according to the required conditions and design specifications.
  • the lower layer may be formed of the same or different material as the upper silicon layer, and the intermediate layer may be SiO 2 , Si 3 N 4 , Al 2 O 3 , Y 2 0 3 , ZrO 2 , HfO 2 , Ta 2 O 5 , It may be formed using at least one of TiO 2 .
  • a polysilicon thin film layer may be formed on the upper surface of the upper silicon layer.
  • the polysilicon thin film layer may be provided by depositing a polysilicon layer on the top surface of the upper silicon layer, and then polishing the top surface of the polysilicon layer to remove the top recess of the polysilicon layer.
  • other means may be used instead of the polysilicon thin film layer or the polysilicon thin film layer may be removed.
  • Guide trenches may be formed in a variety of ways depending on the desired conditions.
  • the upper silicon layer and the intermediate layer may be removed by a single removal process or a plurality of removal processes.
  • the guide trench may pattern the second photoresist pattern on the upper silicon layer, continuously etch the upper silicon layer and the intermediate layer by using the second photoresist pattern, and then remove the second photoresist pattern. It can be formed by the bar, the guide trench can be formed during the second etching.
  • the upper silicon layer and the intermediate layer may be removed by different etching processes, or alternatively, the guide trench may be formed by other processing.
  • the intermediate layer formed between the lower layer and the upper silicon layer may be partially exposed to the outside through the guide trench, and by partially removing the intermediate layer corresponding to the periphery of the common channel using the guide trench, A hollow micro channel structure capable of resonating with respect to the laminated substrate may be formed by the upper silicon layer including the hollow channel therein.
  • the intermediate layer corresponding to the lower portion of the common channel may be partially removed by the third etching process through the guide trench.
  • the microchannel structure can resonate with respect to the laminated substrate
  • various structures can be applied according to the required conditions and design specifications.
  • the microchannel structure may be provided in a cantilever structure having a fixed end at one end and a free end at the other end.
  • the micro channel structure may be provided in a bridge structure having fixed ends at both ends.
  • the first electrode layer may be formed on the upper surface of the microchannel structure, and the glass substrate may be provided with a second electrode layer for cooperatively acting with the first metal layer.
  • Glass substrates can be provided in a variety of ways depending on the conditions and design specifications required.
  • the glass substrate may include patterning a third photoresist pattern on the surface of the glass substrate, forming a resonance space on the surface of the glass substrate by fourth etching the surface of the glass substrate using the third photoresist pattern, And forming a second electrode layer on the resonance space.
  • microchannel resonator and the manufacturing method thereof according to the present invention it is possible to simplify the structure and manufacturing process.
  • a cavity channel is formed inside the upper silicon layer, and the upper silicon layer and the intermediate layer corresponding to the periphery of the cavity channel are partially formed. Because it can be removed to form a pipe-like micro-channel structure, it is possible to omit a complicated patterning and etching process of several steps as before, and to form a micro-channel structure in a relatively simple process.
  • the depth of formation of the hollow channel may be asymmetrically formed on the hollow microchannel structure according to the movement characteristics and vibration characteristics of the material moving along the hollow channel.
  • the depth of formation of the hollow channel can be asymmetrically formed on the hollow microchannel structure. Therefore, by adjusting the depth of formation of the hollow channel on the hollow microchannel structure according to the movement characteristics and vibration characteristics of the material moving along the hollow channel, it is possible to measure the characteristics of the measurement object under optimal conditions according to the measurement environment.
  • the cavity channel inside the upper silicon layer can be formed by a relatively simple process of annealing the silicon substrate after forming a plurality of trenches on the silicon substrate, thereby further simplifying the structure and manufacturing process. can do.
  • the formation depth of the hollow channel on the hollow microchannel structure can be adjusted by simply changing the trench formation conditions such as the diameter and the spacing of the trench, the structure and the manufacturing process can be simplified.
  • the common channel can be formed in various shapes and structures according to the required conditions and design specifications, and the micro channel structure can be formed based on the common channel, micro The channel structure can be formed under more various conditions and shapes.
  • the present invention can improve structural stability and reliability.
  • FIG. 1 and 2 are diagrams for explaining a microchannel resonator according to the present invention.
  • FIGS. 2 to 10 are diagrams for explaining a method for manufacturing a microchannel resonator according to the present invention.
  • 11 and 12 are diagrams for explaining a principle and an example in which a common channel is formed by an annealing process as a method of manufacturing a microchannel resonator according to the present invention.
  • FIG. 13 illustrates a method for manufacturing a microchannel resonator according to an exemplary embodiment of the present invention, which describes a change in formation depth of a hollow channel on a hollow microchannel structure.
  • FIG. 14 is a view for explaining a microchannel resonator according to another embodiment of the present invention.
  • FIG. 1 and 2 are views for explaining a microchannel resonator according to the present invention
  • Figures 2 to 10 are views for explaining a method for manufacturing a microchannel resonator according to the present invention.
  • 11 and 12 are diagrams illustrating a principle and an example in which a common channel is formed by an annealing process as a method of manufacturing a microchannel resonator according to the present invention
  • FIG. 13 is a method of manufacturing a microchannel resonator according to the present invention.
  • it is a view for explaining the change in the formation depth of the hollow channel on the hollow micro-channel structure.
  • the microchannel resonator according to the present invention can be used to measure the mass and properties of the object.
  • the microchannel resonator according to the present invention may be used for detecting, measuring, analyzing, and diagnosing physical, chemical, and biological interactions of a measurement object, and the present invention is limited or limited by its use. It is not.
  • the microchannel resonator according to the present invention includes a laminated substrate 100 and a glass substrate 200.
  • the laminated substrate 100 may include a lower layer 110, a middle layer 120 provided on an upper portion of the lower layer 110, and an upper silicon layer provided on an upper portion of the intermediate layer 120. (upper silicon layer) 130.
  • the microchannel structure 102 is provided on the laminated substrate 100 to enable resonance movement, and the first electrode layer 104 formed on the upper surface of the microchannel structure 102 and the second electrode layer provided on the glass substrate 200 ( The microchannel structure 102 may be resonated by the electrostatic force between the 204.
  • the micro channel structure 102 may form a cavity channel 132 in the upper silicon layer 130, and may include an upper silicon layer 130 and an intermediate layer corresponding to the periphery of the cavity channel 132. By partially removing 120, it may be formed into a substantially hollow pipe shape including the hollow channel 132 therein.
  • the microchannel structure may be provided in a cantilever structure having a fixed end at one end and a free end at the other end, but in some cases, the microchannel structure has a bridge structure having fixed ends at both ends. It is also possible to provide.
  • the method for manufacturing a microchannel resonator according to the present invention includes a lower layer 110, an intermediate layer 120 provided on an upper portion of the lower layer 110, and an upper silicon layer 130 provided on an upper portion of the intermediate layer 120.
  • a laminated substrate 100 including a lower layer 110, an intermediate layer 120, and an upper silicon layer 130 is provided.
  • the laminated substrate 100 may be provided by sequentially stacking the intermediate layer 120 and the upper silicon layer 130 on the lower layer 110.
  • the material of the lower layer 110 and the intermediate layer 120 may be appropriately changed according to the required conditions and design specifications.
  • the lower layer 110 may be formed of the same or different material as the upper silicon layer, and the intermediate layer 120 may be SiO 2 , Si 3 N 4 , Al 2 O 3 , Y 2 0 3 , ZrO 2 , HfO It may be formed using at least one of 2 , Ta 2 O 5 , TiO 2 .
  • the lower layer is formed of the same silicon as the upper silicon layer, and the intermediate layer will be described with an example formed of SiO 2 .
  • a cavity channel 132 is formed in the upper silicon layer 130.
  • the common channel 132 inside the upper silicon layer 130 may be formed in various ways according to required conditions and design specifications.
  • the forming of the common channel 132 in the upper silicon layer 130 may include forming a plurality of trenches 131 on the upper silicon layer 130, and the plurality of trenches 131. And annealing the laminated substrate 100 to form the common channel 132 in the upper silicon layer 130 using the two trenches 131. In the annealing of the 100, adjacent trenches 131 are connected to each other and cooperatively form the common channel 132.
  • a plurality of trenches 131 may be formed in the upper silicon layer 130 of the laminated substrate 100 in a predetermined arrangement.
  • the trench 131 may be formed in various ways according to a required condition.
  • the forming of the trench 131 may include patterning a first photoresist pattern (not shown) on the upper silicon layer 130, and using the first photoresist pattern to form the upper silicon layer 130.
  • a first etching of the surface of the), and removing the first photoresist pattern, the trench 131 may be formed to have a predetermined depth during the first etching.
  • the common channel 132 may be formed inside the upper silicon layer 130.
  • the upper opening of the trench 131 is gradually narrowed and closed like a drop of water.
  • the lower ends of the trenches 131 are expanded.
  • the lower ends of the trenches 131 adjacent to each other are connected to each other, thereby cooperatively co-operating inside the upper silicon layer 130 by mutually adjacent trenches 131. 132 may be formed.
  • the degree of formation of the cavity channel 132 may be adjusted by appropriately changing the diameter ⁇ H of the trench 131, the spacing interval S H between the trenches 131, and annealing conditions. .
  • a cavity such as the height (thickness) of the cavity channel 132, the thickness of the closed portion of the upper end of the cavity channel 132, and the depth of the recess (see 201 in FIG. 2) formed on the upper surface of the cavity channel 132.
  • the formation conditions of the channel 132 may be changed by adjusting the diameter ⁇ H of the trench 131 and the separation interval S H between the trench 131.
  • the annealing process is performed by a rapid thermal anneal, but will be described with an example in which the temperature is 1150 ° C, 1 atm (760 Torr), and 15 minutes.
  • the annealing treatment conditions may be appropriately changed according to the required conditions.
  • the depth of formation of the hollow channel can be controlled by adjusting the diameter and the spacing of the trench, it is possible to form the hollow channel vertically and asymmetrically on the hollow microchannel structure according to the required conditions. Do.
  • the hollow channel formed on the hollow microchannel structure is asymmetrically formed up and down, the length L1 from the center of the hollow channel to the upper surface of the hollow microchannel structure and the center of the hollow channel. It can be understood that the length L2 to the bottom is different.
  • a polysilicon thin film layer (Poly-Si LPCVD) is formed on the upper silicon layer 130. 140).
  • the polysilicon thin film layer 140 deposits a polysilicon layer 140 'on the upper surface of the upper silicon layer 140, and then removes the upper surface of the polysilicon layer 140', which may be a problem when bonding later. It can be provided by polishing the top surface of the polysilicon layer 140 'so that the set can be removed.
  • the polysilicon thin film layer 140 may be formed for peripheral structures or bonding, and in some cases, other means may be used instead of the polysilicon thin film layer or the polysilicon thin film layer may be removed.
  • the polysilicon thin film layer 140 is first formed in the embodiment of the present invention, the microchannel structure 102 to be described later is described by way of example. However, in some cases, the polysilicon thin film layer is formed after the microchannel structure is formed. It is also possible to form.
  • the upper silicon layer 130 and the intermediate layer 120 corresponding to the periphery of the hollow channel may be partially removed to form a hollow microchannel structure 102 including the hollow channel 132 therein.
  • the upper silicon layer 130 and the intermediate layer 120 can be removed by a single removal process or a plurality of removal processes.
  • the upper silicon layer 130 and the intermediate layer 120 may be removed at once by a single etching process, or may be separately removed by a plurality of etching processes.
  • the step of partially removing the upper silicon layer 130 and the intermediate layer 120 corresponding to the periphery of the common channel to form the hollow micro-channel structure 102, the upper silicon layer 130 and the intermediate layer Removing the 120 to form a guide trench 106 adjacent to the common channel 132, and partially removing the intermediate layer 120 corresponding to the bottom of the common channel 132 using the guide trench 106.
  • An example including a step of doing so will be described.
  • the upper silicon layer 130 and the intermediate layer 120 are continuously removed to form the guide trench 106 adjacent to the common channel 132.
  • the guide trench 106 may be formed in various ways depending on the required conditions.
  • the guide trench 106 may pattern a second photoresist pattern (not shown) on the upper silicon layer 130, and may use the second photoresist pattern to form the upper silicon layer 130 and the intermediate layer. After continuously etching the second 120, the guide trench 106 may be formed by removing the second photoresist pattern. The guide trench 106 may be formed during the second etching. In some cases, the upper silicon layer and the intermediate layer may be removed by different etching processes, or alternatively, the guide trench may be formed by other processing.
  • the intermediate layer 120 formed between the lower layer 110 and the upper silicon layer 130 may be partially exposed to the outside through the guide trench 106.
  • the intermediate layer 120 corresponding to the periphery of the common channel 132 is partially removed using the guide trench 106.
  • the intermediate layer 120 corresponding to the lower portion of the common channel 132 may be partially removed by the third etching process through the guide trench 106. have.
  • the laminated substrate 100 may be formed by the upper silicon layer 130 including the hollow channel 132 therein.
  • a hollow micro channel structure 102 capable of resonating motion may be formed.
  • various structures may be applied to the microchannel structure 102 as a structure capable of resonant movement with respect to the laminated substrate 100 according to required conditions and design specifications.
  • the micro channel structure 102 by partially removing the upper silicon layer 130 and the lower layer 120 corresponding to the periphery of the common channel 132, the micro channel structure 102 has a fixed end at one end and a free end at the other end. It may be provided in a cantilever structure having a.
  • the micro channel structure 102 has a bridge having fixed ends at both ends. ) May be provided in a structure.
  • a wet or dry etching process using a conventional photoresist pattern may be applied as the first etching process to the second etching process, and the present invention is limited or limited by the type and characteristics of the photoresist pattern and the etching process. It doesn't happen.
  • the removal process of the photoresist pattern may also be performed by conventional ashing and stripping processes.
  • the first electrode layer 104 may be formed on the upper surface of the micro channel structure 102.
  • the first electrode layer 104 may be formed by depositing a metal layer on the upper surface of the micro channel structure 102.
  • various single or alloy metal materials capable of performing electrostatic force with the second electrode layer 204 to be described later may be used, and the present invention is limited or limited by the type and characteristics of the first electrode layer 104. It is not.
  • the microchannel structure 102 may be resonated by the first electrode layer 104 acting on the second electrode layer 204.
  • the glass substrate 200 having the second electrode layer 204 for the electrostatic force operation is bonded to the upper surface of the laminated substrate 100 in cooperation with the first metal layer.
  • the glass substrate 200 may be provided in various ways according to the required conditions and design specifications.
  • the glass substrate 200 may pattern a third photoresist pattern (not shown) on the surface of the glass substrate 200.
  • the surface of the glass substrate 200 may be formed by using the third photoresist pattern. It may be provided by forming a resonance space on the surface of the glass substrate 200 by fourth etching, and forming a second electrode layer 204 on the resonance space.
  • the second electrode layer 204 may be formed of the same or similar material as the first electrode layer 104, and an external power source may be connected to the second electrode layer 204.
  • the glass substrate 200 may be bonded so that the surface on which the resonance space is formed faces the upper surface of the laminated substrate 100 (the surface on which the micro channel structure 102 is exposed).
  • micro channel structure 102 shown in FIGS. 9 and 10 may be a portion corresponding to an end of the cantilever type micro channel structure 102.
  • microchannel structure 102 is configured to resonate by electrostatic excitation between the first electrode layer 104 and the second electrode layer 204
  • the depth of formation of the cavity channel 132 on the hollow microchannel structure 102 may be freely changed up and down asymmetric in consideration of the movement characteristics and vibration characteristics of the material moving along the cavity channel 132. Can be.
  • the formation depth of the hollow channel 131 on the hollow micro-channel structure 102 is controlled by adjusting the formation conditions of the trench 131, for example, the diameter and the spacing interval of the trench 131. It can be freely changed up and down asymmetrically.
  • the formation depth of the hollow channel 131 on the hollow microchannel structure 102 can be changed asymmetrically up and down, the length (L1) from the center of the hollow channel to the top surface of the hollow microchannel structure It can be appreciated that the length L2 from the center of the cavity channel to the bottom of the hollow microchannel structure can be varied.
  • FIG. 14 is a view for explaining a microchannel resonator according to another embodiment of the present invention.
  • the microchannel structure is described as an example in which the cantilever structure is provided.
  • the microchannel structure may be provided in another structure capable of resonant motion.
  • the micro channel structure 102 ′ has a bridge structure having fixed ends at both ends. It may be provided as.
  • the microchannel structure 102 'of the bridge structure may also be configured to resonate by the excitation means such as the first electrode layer and the second electrode layer described above.
PCT/KR2015/005590 2014-06-03 2015-06-03 마이크로채널 공진기 및 그 제조방법 WO2015186976A1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0067724 2014-06-03
KR1020140067724A KR101568758B1 (ko) 2014-06-03 2014-06-03 마이크로채널 공진기 및 그 제조방법

Publications (1)

Publication Number Publication Date
WO2015186976A1 true WO2015186976A1 (ko) 2015-12-10

Family

ID=54610275

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/005590 WO2015186976A1 (ko) 2014-06-03 2015-06-03 마이크로채널 공진기 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR101568758B1 (zh-TW)
WO (1) WO2015186976A1 (zh-TW)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110124095A1 (en) * 2006-01-09 2011-05-26 Scott Manalis Method and apparatus for high throughput diagnosis of diseased cells with microchannel devices
WO2012014142A1 (en) * 2010-07-28 2012-02-02 Istituto Sperimentale Italiano "Lazzaro Spallanzani" A method and an apparatus for characterizing and separating spermatozoa with suspended lever micrometric sensors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282329B2 (en) 2002-08-22 2007-10-16 Massachusetts Institute Of Technology Suspended microchannel detectors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110124095A1 (en) * 2006-01-09 2011-05-26 Scott Manalis Method and apparatus for high throughput diagnosis of diseased cells with microchannel devices
WO2012014142A1 (en) * 2010-07-28 2012-02-02 Istituto Sperimentale Italiano "Lazzaro Spallanzani" A method and an apparatus for characterizing and separating spermatozoa with suspended lever micrometric sensors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BURG, THOMAS P. ET AL.: "Vacuum-packaged suspended microchannel resonant mass sensor for biomolecular detection.", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, vol. 15, no. 6, 2006, pages 1466 - 1476, XP011151334, ISSN: 1057-7157 *
OLCUM, SELIM ET AL.: "Weighing nanoparticles in solution at the attogram scale.", PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES, vol. 111, no. 4, 2014, pages 1310 - 1315, XP055155319, ISSN: 0027-8424 *

Also Published As

Publication number Publication date
KR101568758B1 (ko) 2015-11-13

Similar Documents

Publication Publication Date Title
US9151740B2 (en) Nanopore device with improved sensitivity and method of fabricating the same
US8624336B2 (en) Semiconductor device and manufacturing method thereof
Bazaz et al. Design, simulation and testing of electrostatic SOI MUMPs based microgripper integrated with capacitive contact sensor
JP4929753B2 (ja) 薄膜構造体の形成方法並びに薄膜構造体、振動センサ、圧力センサ及び加速度センサ
US8921974B2 (en) Semiconductor manufacturing and semiconductor device with semiconductor structure
US20120161257A1 (en) Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same
KR102311446B1 (ko) 이중 백플레이트 및 다이어프램 마이크로폰
US9745189B1 (en) MEMS device with isolation sub-frame structure
US11422151B2 (en) Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device
SG173732A1 (en) Miniaturized piezoelectric accelerometers
Hao et al. Dicing‐free SOI process based on wet release technology
WO2015186976A1 (ko) 마이크로채널 공진기 및 그 제조방법
KR100817813B1 (ko) 실리콘 기판 상에 상이한 수직 단차를 갖는 미세구조물의제조 방법
WO2015137584A1 (ko) 미세채널 공진기 및 그 제조방법
Li et al. High‐accuracy silicon‐on‐insulator accelerometer with an increased yield rate
US10544037B2 (en) Integrated semiconductor device and manufacturing method
KR101509610B1 (ko) 마이크로채널 공진기 및 그 제조방법
JP5276785B2 (ja) 半導体装置
KR101568761B1 (ko) 미세채널 공진기 및 그 제조방법
KR100519818B1 (ko) 마이크로 관성센서 제조방법
WO2020080592A1 (ko) Mems 가속도계 및 이의 제조 방법
WO2012039520A1 (ko) 트랜스듀서 및 트랜스듀서 제조방법
CN112079330A (zh) 固态纳米孔制造方法和包括固态纳米孔的传感器
LAFITTE et al. Silicon Nano Tweezers are reaching clinical research
KR100701151B1 (ko) 미세기전집적시스템용 부양 구조물 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15803244

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15803244

Country of ref document: EP

Kind code of ref document: A1