WO2015181016A1 - Organisches optoelektronisches bauelement und verfahren zu dessen herstellung - Google Patents
Organisches optoelektronisches bauelement und verfahren zu dessen herstellung Download PDFInfo
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- WO2015181016A1 WO2015181016A1 PCT/EP2015/061089 EP2015061089W WO2015181016A1 WO 2015181016 A1 WO2015181016 A1 WO 2015181016A1 EP 2015061089 W EP2015061089 W EP 2015061089W WO 2015181016 A1 WO2015181016 A1 WO 2015181016A1
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- bis
- phenyl
- electrode layer
- optoelectronic component
- naphthalen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to an organic optoelectronic component, in particular an organic light emitting diode (OLED), and a method for producing the organic
- ITO Indium tin oxide used as the electrode material, since it is transparent and highly conductive. Indium tin oxide layers are typically deposited by sputtering. It is still wet-chemically separable
- Electrode materials for organic light-emitting diodes known, in particular conductive polymers such. PEDOT (poly (3,4-ethylenedioxythiophene) or PEDOT: PSS (poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonate).
- PEDOT poly (3,4-ethylenedioxythiophene)
- PSS poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonate).
- Electrode material known. Due to the transparency and conductivity are wet-chemically processable
- organic light emitting diodes suitable.
- the conductivity can be adjusted by the concentration of silver nanowires in a solution, but decreases with increasing concentration of the silver nanowires, the transparency.
- On the anode electrode of an organic light-emitting diode are usually further layers, in particular a
- HIL Hole injection layer
- HTL Hole Transport Layer
- Charge transfer can be compromised, as well
- Silver nanowires are reduced to adjacent layers, in particular hole injection layers or hole transport layers, by inhomogeneities.
- An object to be solved is to specify an improved organic optoelectronic component which is distinguished by an improved electrode layer which can be produced by wet-chemical methods and is distinguished by a particularly effective and uniform charge carrier injection into the active layer. Furthermore, a method for
- Production of the optoelectronic organic device can be specified.
- Optoelectronic component and a method for its
- the organic optoelectronic component comprises according to at least one embodiment a first electrode layer, which is a doped matrix material and metallic
- Optoelectronic component an organic active layer which is suitable for the emission or detection of electromagnetic radiation.
- the organic optoelectronic component can in particular be a light-emitting
- organic component such as an organic compound
- the organic active layer is the light-emitting layer.
- Examples is an organic solar cell, wherein the
- organic active layer is the light detecting layer.
- the organic optoelectronic component further comprises a second one
- Electrode layer wherein the organic active layer between the first electrode layer and the second
- Electrode layer is arranged.
- the organic active layer directly adjoins the first electrode layer.
- between the first electrode layer and the organic active layer advantageously no
- Charge carrier transport layer arranged. Rather, the first electrode layer itself acts as Charge carrier injection and / or
- Charge carrier transport layer This is achieved in particular by the fact that the first electrode layer by a
- the metallic nanowires act as electrode material.
- the metallic nanowires form an electrically conductive network in the first electrode layer.
- Such an electrode is called a percolation electrode.
- the doped matrix material in which the metallic nanowires are contained functions as
- the first electrode layer may in particular be the anode-electrode layer of the organic optoelectronic
- the matrix material may comprise a hole injection material and / or a hole transport material.
- the method described herein in contrast to organic light-emitting diodes, in which a hole injection material and a hole transport material are arranged as separate layers between the anode electrode layer and the organic active layer, the method described herein
- organic optoelectronic device advantageously a hole injection material and / or a hole transport material used as a matrix material for the metallic nanowires, which function as electrode material.
- Multifunctional layer which has the functions of a Electrode layer and a hole injection layer
- the metallic nanowires and the doped matrix material in particular a
- the first electrode layer can in particular be applied from a solution to a carrier material, for example a substrate of the organic optoelectronic component.
- the application takes place for example by spin coating, slot coating or doctoring.
- the matrix material may in particular
- Have hole injection material comprising or consisting of at least one of the following materials: PEDOT (poly (3,4-ethylenedioxythiophene), PAni (polyaniline), NPB
- the matrix material may comprise a hole transport material containing or consisting of at least one of the following materials: NPB (N, N'-bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB (N, N'-bis (naphthalen-2-yl) -N, '-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -benzidine); Spiro-TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) -N, '-bis (phenyl) -benzidine); Spiro-NPB
- DMFL-TPD N, '- bis (naphthalen-1-yl) - N,' - bis (phenyl) -spiro
- DMFL-TPD N, '- bis (3-methylphenyl) -N,' - bis (phenyl) -9, 9-dimethyl-fluorene
- DMFL-NPB N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene
- DPFL-TPD N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene
- DPFL-TPD N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene
- DPFL-TPD N, N'-bis (3-methylphenyl)
- NPB ( ⁇ , ⁇ '-bis (naphthalen-l-yl) - ⁇ , ⁇ '-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2, 2 ', 7, 7' tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, '-bis-phenyl-amino) -phenyl] -9H-fluoro; N, N '
- the first electrode layer may in particular be the anode-electrode layer of the optoelectronic component. In an alternative embodiment, the first
- Electrode layer a cathode electrode layer.
- the matrix material advantageously comprises
- Electron transport material In this embodiment, the metallic nanowires are advantageous in a
- Embedded electron transport material as a matrix material, so that in the organic optoelectronic device can advantageously be dispensed with a separate electron transport layer and / or electron injection layer.
- the matrix material may in particular
- electron injection material comprising or consisting of at least one of the following materials:
- NDN-26 MgAg, Cs 2 CO 3, Cs 3 PO 4, Na, Ca, K, Mg, Cs, Li, LiF; 2, 2 ', 2 "- (1,3,5-triethylenetriyl) tris (1-phenyl-1H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3 , 4-oxadiazole, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2,4-triazole; l, 3-bis [2- (2,2'-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-l , 10-phenanthroline (BPhen); 3- (4-biphenylyl)
- the matrix material can be any suitable material. Furthermore, the matrix material can be any suitable material.
- An electron transport material comprising or consisting of at least one of the following materials:
- Electrode layer and the second electrode layer each have a doped matrix material, in which metallic nanowires are embedded.
- Design is z. B. the first electrode layer the
- Anode electrode layer and has a
- the second electrode layer in this embodiment is the cathode electrode layer and can advantageously have an electron injection material and / or electron transport material in which metallic nanowires are embedded.
- the metallic nanowires are in the organic
- the optoelectronic component preferably silver nanowires, which are characterized by a high electrical conductivity.
- the metallic nanowires may be, for example, aluminum nanowires or copper anodized wires.
- Optoelectronic device is a first
- Electrode layer comprising a doped matrix material and metallic nanowires, wet-chemically applied.
- the first electrode layer may in particular be applied to a
- Substrate of the organic optoelectronic device are applied.
- the wet-chemical application takes place from a solution, for example by spin coating, slot coating or doctoring.
- Electrode layer is preferably a solvent used, wherein the solvent is preferably a polar solvent.
- Suitable solvents are, in particular, an arylalkyl ether such as, for example, phenol or anisole
- Diether such as dioxane or an alkylbenzene such as toluene or xylene.
- the doped matrix material in particular as a hole injection material and / or
- Hole transport material acts, and the metallic ones
- Nanowires are applied in a single process step, otherwise required three
- three separate coating and drying steps can be replaced by a single coating and drying step. This can reduce the process time to about a third be reduced, which also reduce the material costs, especially for solvents.
- the application of the electrode material and the doped matrix material in a single process step has the further advantage that the risk of dissolution of an underlying layer, the separate application of a hole injection layer and / or a
- Figure 1 is a schematic representation of a cross section through an organic optoelectronic device according to a first embodiment
- Figure 2 is a schematic representation of a cross section through an organic optoelectronic device according to a second embodiment
- Figure 3 is a schematic representation of a cross section through an organic optoelectronic device according to a third embodiment. Identical or equivalent components are each provided with the same reference numerals in the figures. The
- FIG. 1 schematically shows the layer sequence of a
- Optoelectronic device 10 according to a first
- Embodiment shown which is an organic light emitting diode (OLED).
- OLED organic light emitting diode
- Light-emitting diode 10 has a functional layer stack which is arranged on a substrate 1.
- the substrate 1 may in particular be a flexible substrate, such as a foil.
- the substrate 1 is preferably a transparent substrate, in particular a transparent glass layer or
- the organic light-emitting diode 10 can emit light through the transparent substrate (bottom emitter) or be designed as a light emitting diode emitting on both sides.
- the substrate 1 it is also possible for the substrate 1 to be a nontransparent, preferably reflective substrate 1.
- the organic light-emitting diode 10 has a first
- the first electrode layer 2 forms the anode and the second electrode layer 6 forms the cathode of the organic light-emitting diode 10.
- the first electrode layer 2 advantageously has one
- organic matrix material containing at least one
- Silver nanowires are suitable.
- other metals such as aluminum or copper are suitable.
- the doped matrix material of the electrode layer 2 is advantageously a hole injection material and / or a hole transport material.
- the dopant of the matrix material is preferably a copper ⁇ or bismuth complex.
- the light-emitting organic active layer 3 of the organic light-emitting diode 10 advantageously adjoins directly to the first electrode layer 2.
- Hole transport layers are advantageously not necessary in the organic light-emitting diode 10, as a
- the first electrode layer 2 thus acts advantageous both as anode electrode and as
- the first electrode layer 2 which advantageously has the functions of up to three individual layers, can be applied to the substrate 1 from a solution in a single method step.
- the organic light-emitting diode 10 is therefore characterized by a particularly low production cost.
- the metallic nanowires and the doped matrix material which in particular comprises the hole injection material and / or the hole transport material, are dissolved in a solvent, the solvent preferably being a polar solvent.
- a solvent preferably being a polar solvent.
- Suitable solvents are, in particular, an arylalkyl ether such as, for example, phenol or anisole
- Diether such as dioxane or an alkylbenzene such as toluene or xylene.
- the application of the first electrode layer 2 from the solution can in particular by spin coating, slot coating or
- the first electrode layer 2 is preferably dried by a baking process.
- the subsequent layer reduced. Since instead of two or even three layers, only a single layer is applied, at least one interface in the omitted organic layer stack, whereby possible inhomogeneities at the interface and thereby reduced efficiency losses are reduced.
- the light-emitting organic active layer 3 is advantageously applied directly to the first electrode layer 2. The application of the light-emitting organic layer 3 and the further subsequent layers can by
- Electron transport layer 4 a
- Electrode layer 6 which is the cathode of the organic light emitting diode 10.
- Electrode layer 6 may in particular a thin
- Metal layer such as aluminum
- the organic layer stack and the second electrode layer can be provided with an encapsulation layer for protection, in particular with a so-called thin-film encapsulation. Furthermore, on one of the substrate
- a cover plate or cover layer such as a glass plate
- the first electrode layer 2 it is alternatively possible for the first electrode layer 2 to form the cathode of the organic light-emitting diode 10.
- the first electrode layer 2 a it is alternatively possible for the first electrode layer 2 to form the cathode of the organic light-emitting diode 10.
- the first electrode layer 2 a it is alternatively possible for the first electrode layer 2 to form the cathode of the organic light-emitting diode 10.
- doped matrix material which is a
- Electron transport material acts.
- the second electrode layer 6 is the anode electrode of the organic light emitting diode 10. According to the inverted polarity compared to the previously described embodiment in this case, for example, a
- Hole transport layer 4 and a hole injection layer 5 between the light-emitting organic layer 3 and the second electrode layer 6 are arranged.
- FIG. 2 shows a further advantageous embodiment of an organic optoelectronic component 10 is shown, which is an organic light emitting diode as in the first embodiment.
- Embodiment In particular, the first one
- Electrode layer 2 a doped matrix material having a hole injection material and / or a hole transport material and embedded therein metallic nanowires, in particular silver nanowires.
- active layer 3 directly adjoins the first electrode layer 2.
- the second electrode layer 6 also directly adjoins the organic active layer 3.
- the organic active layer 3 In particular, in this
- Electrode layer 6 in contrast to the first
- Embodiment no electron transport layer and no electron injection layer arranged. Rather, the second electrode layer 6 has a doped matrix material which contains an electron injection material and / or a
- Electron transport material comprises, wherein in the doped matrix material metallic nanowires such as silver nanowires are embedded.
- Electrode layer 6 is in this case the cathode of the organic light emitting diode 10.
- the second electrode layer 6 is formed as a multi-functional layer, wherein the second electrode layer 6, the
- the second electrode layer with the additional functions of an electron injection layer and / or an electron transport layer can also be applied from a solution in a single method step.
- the organic light-emitting diode 10 produced in this way is therefore characterized by a particularly low
- the layers it is possible for the layers to be arranged in reverse order on the substrate 1, so that the second electrode layer 6 is arranged on the substrate and the first electrode layer 2 is arranged on a side of the organic light-emitting diode 10 facing away from the substrate.
- FIG. 3 shows a further advantageous embodiment of an organic optoelectronic component 10, which is an organic light-emitting diode.
- the layers are in
- the second electrode layer 6 is applied to the substrate 1, which forms the cathode of the organic light-emitting diode 10.
- the second electrode layer 6 is followed by an electron injection layer 5, a
- Electron-transport layer 4 and the light-emitting organic active layer 3 At the light-emitting organic layer 3 immediately adjacent to the first
- Electrode layer 2 which has a doped matrix material and metallic nanowires.
- the first electrode layer 2 corresponds in terms of their properties and advantages to the first embodiment.
- the first electrode layer 2 may in particular be transparent.
- the organic light emitting diode 10 may be implemented as a top emitter which emits upward from the substrate 1.
- the second electrode layer 5 is a reflective metal layer.
- the substrate 1 may be reflective, for example, the substrate 1 may be a reflective metal foil.
- the organic light-emitting diode 10 may alternatively be designed as a light emitting diode emitting on both sides.
- the first electrode layer 2, the second electrode layer 6 and the substrate 1 are each advantageously transparent.
- the invention is not limited by the description with reference to the embodiments. Rather, the includes
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Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE112015002558.8T DE112015002558B4 (de) | 2014-05-30 | 2015-05-20 | Organisches optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
| KR1020167033806A KR20170013268A (ko) | 2014-05-30 | 2015-05-20 | 유기 광전 소자 및 이의 제조 방법 |
| US15/314,922 US11056660B2 (en) | 2014-05-30 | 2015-05-20 | Organic optoelectronic component and method for producing the same |
| CN201580028543.7A CN106575717A (zh) | 2014-05-30 | 2015-05-20 | 有机光电子器件及其制造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014107658.3 | 2014-05-30 | ||
| DE102014107658.3A DE102014107658A1 (de) | 2014-05-30 | 2014-05-30 | Organisches optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015181016A1 true WO2015181016A1 (de) | 2015-12-03 |
Family
ID=53189072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2015/061089 Ceased WO2015181016A1 (de) | 2014-05-30 | 2015-05-20 | Organisches optoelektronisches bauelement und verfahren zu dessen herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11056660B2 (de) |
| KR (1) | KR20170013268A (de) |
| CN (1) | CN106575717A (de) |
| DE (3) | DE102014107658A1 (de) |
| WO (1) | WO2015181016A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015103895B4 (de) * | 2015-03-17 | 2025-12-31 | Pictiva Displays International Limited | Verfahren zum Herstellen eines organischen Bauelements |
| EP3358638A4 (de) * | 2016-06-15 | 2019-01-16 | Kolon Industries, Inc. | Organische solarzelle und verfahren zur herstellung davon |
| CN110172275A (zh) * | 2019-05-22 | 2019-08-27 | 深圳市华星光电半导体显示技术有限公司 | 电子传输层墨水及其制备方法、电致发光器件 |
| KR102331370B1 (ko) | 2020-01-08 | 2021-11-26 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조 방법 및 이를 포함한 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110139253A1 (en) * | 2009-12-11 | 2011-06-16 | Konica Minolta Holdings, Inc. | Organic photoelectric conversion element and producing method of the same |
| US20120104374A1 (en) * | 2010-11-03 | 2012-05-03 | Cambrios Technologies Corporation | Coating compositions for forming nanocomposite films |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148623B2 (en) * | 2004-06-28 | 2006-12-12 | Vladimir Vlaskin | Flexible electroluminescent material |
| TWI426531B (zh) * | 2006-10-12 | 2014-02-11 | 坎畢歐科技公司 | 以奈米線為主之透明導體及其應用 |
| CN103338882B (zh) * | 2010-12-07 | 2017-03-08 | 罗地亚管理公司 | 导电纳米结构体、制备该纳米结构体的方法、包括该纳米结构体的导电聚合物膜以及包括该膜的电子装置 |
| EP2766939B1 (de) * | 2011-10-13 | 2019-04-24 | Cambrios Film Solutions Corporation | Oled mit metall-nanodrähte enthaltender elektrode |
| DE102011084639A1 (de) * | 2011-10-17 | 2013-04-18 | Osram Opto Semiconductors Gmbh | Organisches elektronisches bauelement mit dotierstoff, verwendung eines dotierstoffs und verfahren zur herstellung des dotierstoffs |
| US9398688B2 (en) * | 2011-11-29 | 2016-07-19 | Toray Industries, Inc. | Electroconductive stack body and display body employing the same |
| DE102012204327A1 (de) * | 2012-03-19 | 2013-09-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
| WO2014015284A1 (en) * | 2012-07-20 | 2014-01-23 | The Regents Of The University Of California | High efficiency organic light emitting devices |
| US8969856B2 (en) * | 2012-08-29 | 2015-03-03 | General Electric Company | OLED devices with internal outcoupling |
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2014
- 2014-05-30 DE DE102014107658.3A patent/DE102014107658A1/de not_active Withdrawn
-
2015
- 2015-05-20 DE DE112015007277.2T patent/DE112015007277B9/de active Active
- 2015-05-20 WO PCT/EP2015/061089 patent/WO2015181016A1/de not_active Ceased
- 2015-05-20 CN CN201580028543.7A patent/CN106575717A/zh active Pending
- 2015-05-20 KR KR1020167033806A patent/KR20170013268A/ko not_active Withdrawn
- 2015-05-20 US US15/314,922 patent/US11056660B2/en active Active
- 2015-05-20 DE DE112015002558.8T patent/DE112015002558B4/de active Active
Patent Citations (2)
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| US20110139253A1 (en) * | 2009-12-11 | 2011-06-16 | Konica Minolta Holdings, Inc. | Organic photoelectric conversion element and producing method of the same |
| US20120104374A1 (en) * | 2010-11-03 | 2012-05-03 | Cambrios Technologies Corporation | Coating compositions for forming nanocomposite films |
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| WHITNEY GAYNOR ET AL: "Fully Solution-Processed Inverted Polymer Solar Cells with Laminated Nanowire Electrodes", ACS NANO, vol. 4, no. 1, 26 January 2010 (2010-01-26), pages 30 - 34, XP055142451, ISSN: 1936-0851, DOI: 10.1021/nn900758e * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112015007277B3 (de) | 2022-02-17 |
| DE112015007277B9 (de) | 2022-11-17 |
| US20180205028A1 (en) | 2018-07-19 |
| US11056660B2 (en) | 2021-07-06 |
| DE102014107658A1 (de) | 2015-12-03 |
| KR20170013268A (ko) | 2017-02-06 |
| CN106575717A (zh) | 2017-04-19 |
| DE112015002558B4 (de) | 2021-03-18 |
| DE112015002558A5 (de) | 2017-02-23 |
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