WO2015175108A1 - Flexible circuit on reflective substrate - Google Patents
Flexible circuit on reflective substrate Download PDFInfo
- Publication number
- WO2015175108A1 WO2015175108A1 PCT/US2015/024052 US2015024052W WO2015175108A1 WO 2015175108 A1 WO2015175108 A1 WO 2015175108A1 US 2015024052 W US2015024052 W US 2015024052W WO 2015175108 A1 WO2015175108 A1 WO 2015175108A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flexible circuit
- electrically conductive
- conductive metal
- film
- item
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims abstract description 30
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 239000010410 layer Substances 0.000 claims description 40
- 229920001400 block copolymer Polymers 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 10
- 230000001737 promoting effect Effects 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- -1 polyethylene terephthalate Polymers 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 229920001577 copolymer Polymers 0.000 abstract description 5
- 229920000642 polymer Polymers 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 38
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003855 Adhesive Lamination Methods 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 235000000396 iron Nutrition 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Definitions
- LEDs In many lighting applications it is desirable to combine LEDs with a reflective surface, in order to create high efficiency light sources. While typical circuit boards having mounted LEDs can be coated with reflective materials such as white ink, epoxy, or paint, these surfaces typically only have reflectivity values in the 70% to 90% range. In addition, these types of surfaces generally are diffusely reflective, and scattering light may actually decrease efficiency in some lighting systems.
- a specularly reflective surface such as a metal can help direct reflected light in a complimentary direction and thereby increase efficiency.
- applying a reflective metallic coating to the surface of a circuit board can be problematic, as the metal can short out circuit board conductors.
- the present disclosure describes materials and methods for creating electrical circuits on a non-conductive multilayer reflector substrate that can withstand reflow temperatures with low temperature solder pastes without creating distortions in the reflective substrate.
- the materials and methods include the use of a novel reflective mirror film based on silicone polyoxamide polymers or copolymers, which can retain reflectivity at these temperatures without damage to reflection or other film properties.
- the present disclosure provides for a flexible circuit that includes a visible-light reflective film having alternating layers of a first polymeric material and a second polymeric material, each having a different index of refraction, and where at least one of the first and second polymeric materials includes a polydiorganosiloxane polyoxamide block copolymer; and an electrically conductive metal disposed in a circuit pattern on the visible-light reflective film.
- the present disclosure provides for a method that includes depositing an electrically conductive metal on a major surface of a film, the film having: alternating layers of a first polymeric material and a second polymeric material, each having a different index of refraction, and where at least one of the first and second polymeric materials includes a polydiorganosiloxane polyoxamide block copolymer; and patterning the electrically conductive metal to form a circuit.
- FIG. 1 A shows a perspective view of a flexible circuit on reflective substrate; and FIG. IB shows a cross-sectional schematic through section A-A' of FIG. 1A.
- the present disclosure describes materials and methods for creating electrical circuits on a non-conductive multilayer reflector substrate that can withstand reflow temperatures with low temperature solder pastes, without creating distortions in the reflective substrate.
- Electronic circuits can be fabricated on a variety of non-electrically conductive substrates, such as polymer films, plates, and composite circuit boards. For some applications, it may be particularly desirable to fabricate circuits on highly reflective substrates.
- a non-metallic polymeric multilayer interference mirror such as 3M Enhanced Specular Reflector (ESR) can be used as the surface supporting an electrical circuit without shorting the conductors.
- ESR 3M Enhanced Specular Reflector
- the ESR film is typically applied after the circuit is fabricated, to avoid solder refiow temperatures that can damage the ESR film. Damage to the ESR film can occur at temperatures as low as about 130°C, generally much lower than solder reflow temperatures.
- cutting and applying ESR film as a secondary operation can add significant cost to a circuit assembly.
- spatially related terms including but not limited to, “lower,” “upper,” “beneath,” “below,” “above,” and “on top,” if used herein, are utilized for ease of description to describe spatial relationships of an element(s) to another.
- Such spatially related terms encompass different orientations of the device in use or operation in addition to the particular orientations depicted in the figures and described herein. For example, if an object depicted in the figures is turned over or flipped over, portions previously described as below or beneath other elements would then be above those other elements.
- an element, component or layer for example when an element, component or layer for example is described as forming a "coincident interface" with, or being “on” “connected to,” “coupled with” or “in contact with” another element, component or layer, it can be directly on, directly connected to, directly coupled with, in direct contact with, or intervening elements, components or layers may be on, connected, coupled or in contact with the particular element, component or layer, for example.
- an element, component or layer for example is referred to as being “directly on,” “directly connected to,” “directly coupled with,” or “directly in contact with” another element, there are no intervening elements, components or layers for example.
- the present disclosure provides a technique of fabricating flexible electronic circuits directly onto a non-metallic polymeric multilayer interference mirror film (i.e., a visible-light reflective film) by fabricating novel multilayer optical films using materials that can withstand reflow temperatures which can be approximately 135°C for a number of low temperature solder pastes.
- Representative solder paste examples include alloys of bismuth and tin in a ratio of approximately 58/42 which has a reflow temperature of 138°C, as supplied by Nordson EFD Corporation, Westlake OH, and also available from Indium Corporation of America, Utica, NY.
- the novel multilayer optical films can withstand reflow temperatures that are not greater than 150°C, that can include several lead- free solder pastes such as, for example, Sn/In in a ratio of 52/48 (reflow 13 FC); Sn/In in a ratio of 58/42 (reflow 145°C); In/Ga in a ratio of 99.3/0.7 (reflow 150°C); In/Bi in a ratio of 95/5 (reflow 150°C); Bi/Sn/Ag in a ratio of 57/42/1 (reflow 140°C); and In/Ag in a ratio of 97/3 (reflow 143°C); and others available from Indium Corporation of America, Utica, NY.
- lead- free solder pastes such as, for example, Sn/In in a ratio of 52/48 (reflow 13 FC); Sn/In in a ratio of 58/42 (reflow 145°C); In/Ga in a ratio of 99.3/0.7 (reflow 150°C); In/Bi
- the technique includes the use of a novel reflective mirror film based on silicone polyoxamide polymers or copolymers, which can retain reflectivity at these temperatures without damage to reflection or other film properties, conditions necessary for flexible circuit production on reflective substrates.
- the silicone polyoxamide polymers or copolymers include films such as those described in, for example, U.S. Patent Nos. 7,501,184 entitled POLYDIORGANOSILOXANE POLYOXAMIDE COPOLYMERS; 7,820,297 entitled MULTILAYER FILMS INCLUDING THERMOPLASTIC SILICONE BLOCK COPOLYMERS; and 8,067,094 entitled FILMS INCLUDING THERMOPLASTIC SILICONE BLOCK COPOLYMERS.
- LED circuits with reflective surfaces can serve as efficient light engines in a broad variety of LCD display applications from handheld and mobile devices to laptops, monitors, TVs and luminaires. By making light engines more efficient,
- combining electronic circuit and reflector can reduce part count and can also improve efficiency.
- Additional applications of the flexible circuits on reflective substrates can include, for example, solar energy and other sensor applications, as the present invention enables a sheet that can provide both reflective and electrical function in a single film.
- FIG. 1A shows a perspective view of a flexible circuit on reflective substrate 100, according to one aspect of the disclosure.
- Flexible circuit on reflective substrate 100 includes a polymeric multilayer interference reflector 110 having a first major surface 1 12 and an opposing second major surface 114.
- An electrically conductive metal 120 is disposed in a circuit pattern (here, represented by a break in the electrically conductive metal 120) on the first major surface 112.
- An electrical component 130 for example including an LED 135, is electrically connected to the electrically conductive metal 120 using solder joint 140.
- a locally heated region 115 within the reflective substrate 100 results from soldering the connection at the solder joint 140, and in some cases can extend throughout the entire polymeric multilayer interference reflector 110, for example during a reflow soldering process.
- FIG. IB shows a cross-sectional schematic through section A- A' of FIG. 1A, according to one aspect of the disclosure.
- the cross-section shows the electrically conductive metal 120 of the circuit pattern deposited directly on the first major surface 112 of the polymeric multilayer interference reflector 110.
- a tie layer (not shown) may be deposited on the first major surface 112 of the polymeric interference reflector 110 to aid adhesion of the electrically conductive metal 120, as described elsewhere.
- an adhesive layer (not shown) may be disposed between the electrically conductive metal 120 and the first major surface 112 of the polymeric interference reflector 110, to adhere the two together, as described elsewhere.
- the locally heated region 115 generally extends through the thickness of the polymeric multilayer interference reflector 110, and can result in distortions of the tens- to hundreds- of alternating polymeric layers that comprise the polymeric multilayer interference reflector 110, which can lead to a decrease in reflectivity, particularly specular reflectivity.
- the present disclosure relates to thermally resistant materials making up the polymeric multilayer interference reflector 110, such that for the solder reflow temperatures contemplated, degradation of performance does not occur.
- adhesively attached flex circuits can include a conductive metal trace having an adhesive backing that can collectively be patterned and adhesively attached to a major surface of the reflective substrate, as known to those of skill in the art.
- both adhesively attached flex circuits and adhesiveless flex circuits can include an optional conductive adhesion-promoting "tie” layer deposited onto the reflective substrate by using one of a variety of techniques including, for example, sputtering, vapor deposition, plasma deposition, or e-beam evaporation.
- the "tie” layer can comprise a readily deposited metal that adheres well to the outer surface of the reflective substrate such as, for example, chromium, nickel-chromium, and others, as known to those of skill in the art.
- the "tie” layer can be deposited at a thickness ranging from about 5 nm to about 30 nm, or from about 5 nm to about 20 nm, or from about 10 nm to about 15 nm.
- adhesiveless flex circuits can be preferred, and can include a metal "seed” layer that can then be optionally deposited on the "tie” layer by any similar technique; the "seed” layer typically can be used as a conductive base for plating the conductors of the flexible circuit, and can be the same metal or a different metal as the flexible circuit.
- the "seed” layer can be deposited at a thickness ranging from about 50 nm to about 500 nm, or from about 50 nm to about 200 nm, or from about 100 nm to about 150 nm. In some cases, seed layers can be deposited to a thickness as low as 15 nm, and still result in acceptable plating.
- the electrically conductive metal of the flexible circuit and/or the "seed" layer can include copper, silver, aluminum, tin, gold, or an alloy or combination thereof. In some cases, the electrically conductive metal can include a laminate of at least two metals, for example, silver and copper.
- the electrically conductive metal can be deposited by plating at least one metal on the adhesion promoting "tie" layer and/or the "seed" layer by any known technique, for example by using electroplating or electroless plating.
- the electrically conductive metal can be deposited at a thickness ranging from about 2 microns to about 50 microns, or from about 2 microns to about 25 microns, or from about 10 microns to about 20 microns.
- the electrically conductive metal can then be patterned to form a circuit by any of the patterning techniques commonly employed, such as including the steps of applying a photoresist, patterning the photoresist, etching the electrically conductive metal, and removing the photoresist. At least one electronic component can then be soldered to the electrically conductive metal circuit on the reflective substrate. Examples
- Conductive ESR mirror films were fabricated by sputter coating approximately 10 nm of chromium onto the surface, then sputtering copper to about 100 nm thickness, and finally plating with copper to about 12 - 20 microns thickness.
- the resulting "optical flex" was then patterned and etched using a conventional circuit pattern process. The resulting circuits retained their mirror surface, which supports the patterned conductive traces.
- PET polyethylene terephthalate
- polydiorganosiloxane polyoxamide thermo Plastic silicone elastomer as the low index material
- Copper was then plated to a thickness of approximately 18 to 20 microns of copper using an electroplating process.
- An LED circuit was patterned onto the copper surface and the film.
- the circuit was approximately 230 mm long having two power buses approximately 1mm wide and spaced approximately 10 mm apart connecting an LED circuit running between the buses.
- the film was etched in a ferric chloride bath to remove unpatterned copper, and then in a mixture of potassium permanganate and potassium hydroxide to remove the chrome layer and reveal a flexible circuit on the reflective substrate, suitable for attachment of an LED.
- the flexible circuit on the reflective substrate was then laminated to an aluminum sheet using TC 2810 thermally conductive epoxy, available from 3M Company.
- a Bi/Sn solder paste composition having a ratio of 58/42, with a reflow temperature of 138°C (available from 3M Company.
- the LED circuit was populated with 6 Osram Oslon LEDs in series. The LEDs were placed in the paste and heated to a temperature of 150°C. The circuit was cooled and tested, and the LEDs were able to be powered and illuminated. The surface of the mirror film appeared to be undamaged and still showed specular reflectivity.
- Item 1 is a flexible circuit, comprising: a visible-light reflective film having alternating layers of a first polymeric material and a second polymeric material, each having a different index of refraction, and where at least one of the first and second polymeric materials comprises a polydiorganosiloxane polyoxamide block copolymer; and an electrically conductive metal disposed in a circuit pattern on the visible-light reflective film.
- Item 2 is the flexible circuit of item 1, wherein a difference in the index of refraction between the first and second polymeric materials is greater than about 0.05.
- Item 3 is the flexible circuit of item 1 or item 2, wherein each of the first and second polymeric material comprises silicone polyoxamide block copolymers.
- Item 4 is the flexible circuit of item 1 to item 3, wherein at least one of the first and second polymeric materials comprise polyethylene terephthalate (PET), polyethylene
- PEN naphthalate
- PET/ silicone polyoxamide block copolymers PET/ silicone polyoxamide block copolymers
- PEN/silicone polyoxamide block copolymers PET/silicone polyoxamide block copolymers
- PMMA/ silicone polyoxamide block copolymers PMMA/ silicone polyoxamide block copolymers or combinations thereof.
- Item 5 is the flexible circuit of item 1 to item 4, wherein the electrically conductive metal comprises copper, silver, aluminum, tin, gold, or an alloy or combination thereof.
- Item 6 is the flexible circuit of item 1 to item 5, wherein the electrically conductive metal comprises a laminate of at least two metals.
- Item 7 is the flexible circuit of item 6, wherein the laminate of at least two metals comprises silver and copper.
- Item 8 is the flexible circuit of item 1 to item 7, wherein the visible-light reflective film is electrically non-conductive.
- Item 9 is the flexible circuit of item 1 to item 8, further comprising at least one electronic component soldered to the electrically conductive metal.
- Item 10 is the flexible circuit of item 9, wherein the at least one electronic component comprises a light emitting diode (LED).
- LED light emitting diode
- Item 11 is the flexible circuit of item 9 or item 10, wherein the solder is a low
- Item 12 is the flexible circuit of item 9 to item 11, wherein the solder is a low
- Item 13 is the flexible circuit of item 9 to item 12, wherein the solder comprises a mixture of tin and bismuth.
- Item 14 is the flexible circuit of item 9 to item 13, wherein the visible-light reflective film surrounding the soldered electronic component is not visibly distorted.
- Item 15 is the flexible circuit of item 1 to item 14, further comprising an adhesion promoting tie layer disposed between the visible-light reflective film and the electrically conductive metal.
- Item 16 is the flexible circuit of claim 15, wherein the adhesion promoting tie layer comprises chromium.
- Item 17 is the flexible circuit of item 1 to item 16, further comprising an adhesive disposed between the visible-light reflective film and the electrically conductive metal.
- Item 18 is a method, comprising: depositing an electrically conductive metal on a major surface of a film, the film comprising: alternating layers of a first polymeric material and a second polymeric material, each having a different index of refraction, and where at least one of the first and second polymeric materials comprises a polydiorganosiloxane polyoxamide block copolymer; and patterning the electrically conductive metal to form a circuit.
- Item 19 is the method of item 18, further comprising depositing an adhesion promoting tie layer on the major surface of the film prior to depositing the electrically conductive metal.
- Item 20 is the method of item 19, wherein depositing the adhesion promoting tie layer comprises sputtering, vapor deposition, plasma deposition, or e-beam evaporation.
- Item 21 is the method of item 18, wherein the electrically conductive metal comprises an adhesive layer that adheres the electrically conductive metal to the major surface of the film
- Item 22 is the method of item 18 to item 21, wherein depositing an electrically conductive metal comprises plating at least one metal on the adhesion promoting tie layer.
- Item 23 is the method of item 22, wherein plating comprises electroplating.
- Item 24 is the method of item 18 to item 23, wherein patterning the electrically conductive metal comprises the steps of applying a photoresist, patterning the photoresist, etching the electrically conductive metal, and removing the photoresist.
- Item 25 is the method of item 18 to item 24, further comprising soldering at least one electrical component to the circuit.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Led Device Packages (AREA)
- Optical Elements Other Than Lenses (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167034575A KR20170002618A (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
US15/124,513 US20170077357A1 (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
CN201580025138.XA CN106463594A (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
SG11201609088VA SG11201609088VA (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
JP2016567711A JP2017518636A (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
EP15793424.1A EP3143647A4 (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461993390P | 2014-05-15 | 2014-05-15 | |
US61/993,390 | 2014-05-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015175108A1 true WO2015175108A1 (en) | 2015-11-19 |
Family
ID=54480399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2015/024052 WO2015175108A1 (en) | 2014-05-15 | 2015-04-02 | Flexible circuit on reflective substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170077357A1 (en) |
EP (1) | EP3143647A4 (en) |
JP (1) | JP2017518636A (en) |
KR (1) | KR20170002618A (en) |
CN (1) | CN106463594A (en) |
SG (1) | SG11201609088VA (en) |
TW (1) | TW201607383A (en) |
WO (1) | WO2015175108A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070177272A1 (en) * | 2005-12-23 | 2007-08-02 | 3M Innovative Properties Company | Multilayer films including thermoplastic silicone block copolymers |
US20080290362A1 (en) * | 2007-05-25 | 2008-11-27 | Philips Lumileds Lighting Company Llc | Illumination Device with a Wavelength Converting Element Held by a Support Structure Having an Aperture |
JP2010504645A (en) * | 2006-09-21 | 2010-02-12 | スリーエム イノベイティブ プロパティズ カンパニー | Thermally conductive LED assembly |
US20100061093A1 (en) * | 2005-03-12 | 2010-03-11 | Janssen Jeffrey R | Illumination devices and methods for making the same |
US20140036461A1 (en) * | 2010-11-03 | 2014-02-06 | 3M Innovative Properties Company | Flexible led device for thermal management and method of making |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050116235A1 (en) * | 2003-12-02 | 2005-06-02 | Schultz John C. | Illumination assembly |
CN101346649B (en) * | 2005-12-23 | 2010-09-01 | 3M创新有限公司 | Films including thermoplastic silicone block copolymers |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
US20130011608A1 (en) * | 2010-01-13 | 2013-01-10 | Wolk Martin B | Optical films with microstructured low refractive index nanovoided layers and methods therefor |
JP6157118B2 (en) * | 2010-03-23 | 2017-07-05 | 株式会社朝日ラバー | Flexible reflective substrate, method for producing the same, and raw material composition used for the reflective substrate |
JP5684511B2 (en) * | 2010-08-11 | 2015-03-11 | 三菱樹脂株式会社 | Metal foil laminate, LED mounting substrate and light source device |
MY164263A (en) * | 2010-12-29 | 2017-11-30 | 3M Innovative Properties Co | Phosphor refletor assembly for remote phosphor led device |
JP5822838B2 (en) * | 2012-01-13 | 2015-11-24 | Jx日鉱日石金属株式会社 | Copper foil composite, molded body and method for producing the same |
US9099626B2 (en) * | 2012-04-02 | 2015-08-04 | Jds Uniphase Corporation | Broadband dielectric reflectors for LED |
CN104349893B (en) * | 2012-06-01 | 2017-07-18 | 科思创德国股份有限公司 | It is used as the sandwich construction of reflector |
US20140191263A1 (en) * | 2013-01-07 | 2014-07-10 | Sabic Innovative Plastics Ip B.V. | Compositions for an led reflector and articles thereof |
DE102013104840A1 (en) * | 2013-05-10 | 2014-11-13 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor components |
-
2015
- 2015-04-02 US US15/124,513 patent/US20170077357A1/en not_active Abandoned
- 2015-04-02 CN CN201580025138.XA patent/CN106463594A/en active Pending
- 2015-04-02 WO PCT/US2015/024052 patent/WO2015175108A1/en active Application Filing
- 2015-04-02 EP EP15793424.1A patent/EP3143647A4/en not_active Withdrawn
- 2015-04-02 KR KR1020167034575A patent/KR20170002618A/en unknown
- 2015-04-02 SG SG11201609088VA patent/SG11201609088VA/en unknown
- 2015-04-02 JP JP2016567711A patent/JP2017518636A/en active Pending
- 2015-05-14 TW TW104115434A patent/TW201607383A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100061093A1 (en) * | 2005-03-12 | 2010-03-11 | Janssen Jeffrey R | Illumination devices and methods for making the same |
US20070177272A1 (en) * | 2005-12-23 | 2007-08-02 | 3M Innovative Properties Company | Multilayer films including thermoplastic silicone block copolymers |
JP2010504645A (en) * | 2006-09-21 | 2010-02-12 | スリーエム イノベイティブ プロパティズ カンパニー | Thermally conductive LED assembly |
US20080290362A1 (en) * | 2007-05-25 | 2008-11-27 | Philips Lumileds Lighting Company Llc | Illumination Device with a Wavelength Converting Element Held by a Support Structure Having an Aperture |
US20140036461A1 (en) * | 2010-11-03 | 2014-02-06 | 3M Innovative Properties Company | Flexible led device for thermal management and method of making |
Non-Patent Citations (1)
Title |
---|
See also references of EP3143647A4 * |
Also Published As
Publication number | Publication date |
---|---|
US20170077357A1 (en) | 2017-03-16 |
KR20170002618A (en) | 2017-01-06 |
EP3143647A4 (en) | 2017-09-27 |
JP2017518636A (en) | 2017-07-06 |
EP3143647A1 (en) | 2017-03-22 |
CN106463594A (en) | 2017-02-22 |
SG11201609088VA (en) | 2016-11-29 |
TW201607383A (en) | 2016-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI554149B (en) | Bendable circuit structure for led mounting and interconnection | |
JP2011503874A (en) | Thermal interface material assembly with thin transfer film or metallization, apparatus comprising the same, and method of manufacturing the same | |
JP5947400B2 (en) | Method for manufacturing metal printed circuit board | |
US10522521B2 (en) | Illumination assembly, method of manufacturing the illumination assembly, and backlight module including the illumination assembly | |
TWI613956B (en) | Laminated film and mask printed wiring board | |
JP2014003260A (en) | Printed wiring board, printed wiring board assembly, manufacturing method of printed wiring board, and lighting device | |
JP2009231584A (en) | Method of manufacturing led substrate and the led substrate | |
US10143082B2 (en) | Reflection sheet and method of manufacturing the same | |
JP2005303274A (en) | Flexible substrate, multilayer flexible substrate, and manufacturing method therefor | |
CN103237410A (en) | Non-etched aluminum substrate and manufacturing method thereof | |
CN203072249U (en) | Aluminum substrate used for mounting LED lamps | |
US11735684B2 (en) | Method for manufacturing a light-emitting device | |
US20170077357A1 (en) | Flexible circuit on reflective substrate | |
KR20140082599A (en) | Method for manufacturing metal printed circuit board | |
KR101012919B1 (en) | flexible metal clad laminate without adhesion and method of manufacturing flexible metal clad laminate without adhesion | |
EP2985794A1 (en) | Substrate for mounting led | |
CN205141012U (en) | A transparent ceramic base circuit board for LED filament | |
JP7415638B2 (en) | Power supply mechanism and light control body | |
US11134564B1 (en) | Transparent PCB and method for manufacturing the same | |
JP2021044342A (en) | Method of manufacturing electromagnetic wave shield film and method of manufacturing printed wiring board with electromagnetic wave shield film | |
CN216930463U (en) | LCP circuit board, multilayer LCP circuit board and electronic device | |
CN115762352A (en) | Low-cost LED display screen and manufacturing method thereof | |
CN205141010U (en) | A sapphire base circuit board for LED filament | |
WO2018159728A1 (en) | Mounting structure | |
CN113450642A (en) | Backlight module, manufacturing method thereof, display device and electronic equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15793424 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15124513 Country of ref document: US |
|
REEP | Request for entry into the european phase |
Ref document number: 2015793424 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015793424 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2016567711 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20167034575 Country of ref document: KR Kind code of ref document: A |