WO2015171726A3 - System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect - Google Patents

System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect Download PDF

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Publication number
WO2015171726A3
WO2015171726A3 PCT/US2015/029414 US2015029414W WO2015171726A3 WO 2015171726 A3 WO2015171726 A3 WO 2015171726A3 US 2015029414 W US2015029414 W US 2015029414W WO 2015171726 A3 WO2015171726 A3 WO 2015171726A3
Authority
WO
WIPO (PCT)
Prior art keywords
stack
driving voltage
crystal
piezoelectric
clamping effect
Prior art date
Application number
PCT/US2015/029414
Other languages
French (fr)
Other versions
WO2015171726A2 (en
Inventor
Pengdi Han
Jian Tian
Stephen Dynan
Brandon Stone
Original Assignee
Ctg Advanced Materials, Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ctg Advanced Materials, Llc filed Critical Ctg Advanced Materials, Llc
Priority to US15/308,819 priority Critical patent/US10381544B2/en
Publication of WO2015171726A2 publication Critical patent/WO2015171726A2/en
Publication of WO2015171726A3 publication Critical patent/WO2015171726A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode <011> single crystals of both an X-cut and Y-cut ±45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.
PCT/US2015/029414 2001-11-02 2015-05-06 System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect WO2015171726A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/308,819 US10381544B2 (en) 2001-11-02 2015-05-06 System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201461989118P 2014-05-06 2014-05-06
US201461989099P 2014-05-06 2014-05-06
US61/989,118 2014-05-06
US61/989,099 2014-05-06

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US14/266,229 Continuation-In-Part US9260794B2 (en) 2001-11-02 2014-04-30 Crystal growth system and method for lead-contained compositions using batch auto-feeding

Publications (2)

Publication Number Publication Date
WO2015171726A2 WO2015171726A2 (en) 2015-11-12
WO2015171726A3 true WO2015171726A3 (en) 2016-01-14

Family

ID=54393138

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/029414 WO2015171726A2 (en) 2001-11-02 2015-05-06 System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect

Country Status (1)

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WO (1) WO2015171726A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10381544B2 (en) * 2001-11-02 2019-08-13 Cts Corporation System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect
CN113013321B (en) * 2021-02-07 2023-05-12 西安交通大学 Preparation method of piezoelectric single crystal lamination driver

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080309198A1 (en) * 2007-06-18 2008-12-18 The Penn State Research Foundation Acoustic transducer
EP2207215A2 (en) * 2009-01-12 2010-07-14 Delphi Technologies Holding S.à.r.l. Method of Poling Ferroelectric Materials
US7908722B2 (en) * 2004-07-14 2011-03-22 H.C. Materials Corporation Process for the preparation of piezoelectric crystal elements
US8395301B1 (en) * 2010-12-08 2013-03-12 The United States Of America As Represented By The Secretary Of The Navy High power single crystal piezoelectric transformer
US20130211251A1 (en) * 2010-10-13 2013-08-15 H.C. Materials Corporation High frequency piezoelectric crystal composites, devices, and methods for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7908722B2 (en) * 2004-07-14 2011-03-22 H.C. Materials Corporation Process for the preparation of piezoelectric crystal elements
US20080309198A1 (en) * 2007-06-18 2008-12-18 The Penn State Research Foundation Acoustic transducer
EP2207215A2 (en) * 2009-01-12 2010-07-14 Delphi Technologies Holding S.à.r.l. Method of Poling Ferroelectric Materials
US20130211251A1 (en) * 2010-10-13 2013-08-15 H.C. Materials Corporation High frequency piezoelectric crystal composites, devices, and methods for manufacturing the same
US8395301B1 (en) * 2010-12-08 2013-03-12 The United States Of America As Represented By The Secretary Of The Navy High power single crystal piezoelectric transformer

Also Published As

Publication number Publication date
WO2015171726A2 (en) 2015-11-12

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