Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3464—Operating strategies
  • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
  • C23C14/0036—Reactive sputtering
  • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
  • C23C14/0036—Reactive sputtering
  • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
  • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
  • C23C14/542—Controlling the film thickness or evaporation rate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
  • C23C14/568—Transferring the substrates through a series of coating stations
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32366—Localised processing
  • H01J37/32385—Treating the edge of the workpieces
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
  • H01J37/3405—Magnetron sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3414—Targets
  • H01J37/3417—Arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3464—Operating strategies

Definitions

• Embodiments of the present invention relate to layer deposition by sputtering from a target.
• Embodiments of the present invention particularly relate to sputtering on large area substrates, more particularly for static deposition processes.
• Embodiments relate specifically to an apparatus and a method for depositing a layer of a material on a substrate.
• the substrates are coated in different chambers of a coating apparatus.
• the substrates are coated in a vacuum, using a vapor deposition technique.
• substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process etc.
• PVD physical vapor deposition
• CVD chemical vapor deposition
• PECVD plasma enhanced chemical vapor deposition
• the process is performed in a process apparatus or process chamber where the substrate to be coated is located.
• the deposition material can be present in the solid phase in a target.
• atoms of the target material i.e. the material to be deposited, are ejected from the target.
• the atoms of the target material are deposited on the substrate to be coated.
• the sputter material i.e. the material to be deposited on the substrate
• the target may be made from the material to be deposited or may have a backing element on which the material to be deposited is fixed.
• the target including the material to be deposited is supported or fixed in a predefined position in a deposition chamber.
• sputtering can be conducted as magnetron sputtering, wherein a magnet assembly is utilized to confine the plasma for improved sputtering conditions.
• the plasma distribution, the plasma characteristics and other deposition parameters need to be controlled in order to obtain a desired layer deposition on the substrate.
• a uniform layer with desired layer properties is desired.
• This is particularly beneficial for large area deposition, e.g. for manufacturing displays on large area substrates.
• uniformity and process stability can be particularly difficult to achieve for static deposition processes, wherein the substrate is not moved continuously through a deposition zone. Accordingly, considering the increasing demands for the manufacturing of opto-electronic devices and other devices on a large scale, process uniformity and/or stability needs to be further improved.
• an apparatus and a method for depositing a layer of a material on a substrate are provided. Further aspects, advantages, and features are apparent from the dependent claims, the description and the accompanying drawings. [0008] According to one embodiment, an apparatus for deposition of material on a substrate is provided.
• the apparatus includes a deposition array having three or more cathodes.
• the deposition array includes a first outer deposition assembly comprising at least a first cathode of the three or more cathodes, a second outer deposition assembly opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly. At least one of the first outer deposition assembly and the second outer deposition assembly is configured for depositing the material at a higher rate than the inner deposition assembly on the same substrate during the same time.
• an apparatus for deposition of material on a substrate includes a deposition array having three or more cathodes.
• the deposition array includes a first outer deposition assembly comprising at least a first cathode of the three or more cathodes, a second outer deposition assembly opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly.
• the first outer deposition assembly defines a first edge section in a substrate transport direction and the second outer deposition assembly defines a second edge section opposing the first edge section in substrate transport direction, wherein the deposition array further includes a third edge section including first ends of the at least one inner cathode of the inner deposition assembly and a forth edge section including opposing second ends of the cathodes of the inner deposition assembly of the cathode array.
• the gas distribution system is configured for providing a first processing gas condition to the first edge section, the second edge section, the third edge section and the forth edge section for depositing the material at a higher rate than in the remaining section located between the first edge section, the second edge section, the third edge section and the forth edge section.
• a method for deposition of material on a substrate includes providing a deposition array having three or more cathodes, wherein the deposition array includes a first outer deposition assembly comprising at least a first cathode of the three or more cathodes, a second outer deposition assembly opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly, and depositing material on the substrate with the at least one of the first outer deposition assembly and the second outer deposition assembly at a higher rate than with the inner deposition assembly.
• a method for deposition of material on a substrate includes providing a deposition array having three or more cathodes, wherein the deposition array includes a first outer deposition assembly comprising at least a first cathode of the three or more cathodes, a second outer deposition assembly opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly.
• the first outer deposition assembly defines a first edge section in a substrate transport direction and the second outer deposition assembly defines a second edge section opposing the first edge section in substrate transport direction
• the deposition array further comprises a third edge section including first ends of the at least one inner cathode of the inner deposition assembly and a forth edge section including opposing second ends of the cathodes of the inner deposition assembly of the cathode array
• depositing material on the substrate further includes depositing material at the first edge section, the second edge section, the third edge section and the forth edge section at a higher rate than in the remaining section located between the first edge section, the second edge section, the third edge section and the forth edge section.
• FIG. 1 shows a schematic view of an apparatus for deposition of material on a substrate, according to embodiments described herein; shows a schematic view of an apparatus for deposition of material on a substrate, according to embodiments described herein; shows a schematic cross-sectional view of an apparatus having a rotary cathode array configuration according to embodiments described herein, wherein the array is supplied by AC power supplies, and wherein a controller for controlling at least one process parameter is provided; shows a schematic cross-sectional view of an apparatus having a rotary cathode array configuration according to embodiments described herein, wherein the array is supplied by DC power supplies, and wherein a controller for controlling at least one process parameter is provided; shows a schematic cross-sectional view of a rotary cathode according to
• an apparatus 100 for deposition of material on a substrate including a deposition array 222 having three or more cathodes is provided.
• the deposition array 222 includes a first outer deposition assembly 301 comprising at least a first cathode of the three or more cathodes, a second outer deposition assembly 302 opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly 303 comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly.
• At least one of the first outer deposition assembly and the second outer deposition assembly is configured for depositing the material at a higher rate than the inner deposition assembly on the same substrate during the same time, as exemplarily shown in the graph at the bottom of Fig. 1, in which the deposition rate DR is plotted over the distance between the first outer deposition assembly 301 and the second outer deposition assembly 302.
• both the first outer deposition assembly 301 and the second outer deposition assembly 302 are configured for depositing the material at a higher rate than the inner deposition assembly.
• the apparatus as described herein allows for deposition of uniform coatings on substrates, particularly on large area substrates during static deposition processes.
• the term "deposition rate” or “depositing rate” may be understood as the amount of coating material deposited on the substrate per unit time.
• a deposition array includes a plurality of deposition assemblies, particularly at least three deposition assemblies.
• the plurality deposition assemblies may be arranged adjacent to each other.
• the plurality of deposition assemblies may be arranged parallel to each other, for example parallel with an equal spacing between neighboring deposition assemblies.
• a deposition assembly may include at least one deposition source for deposition of material on a substrate, such as a target.
• the deposition assembly may include at least one selected from the group consisting of: a gas distribution system, a cathode, particularly a rotary cathode, a power supply, a magnet assembly, and means for controlling at least one processing parameter.
• the means for controlling at least one processing parameter can, for example, include a controller for controlling a power supply of a deposition assembly and/or a mass flow controller for controlling an amount of processing gas to a deposition assembly and/or an element for controlling the magnetic field of a magnet assembly, such as an eccentric arrangement.
• the eccentric arrangement may be configured for varying the position of the magnetic assembly in relation to the cathode.
• sputtering can be conducted as DC (direct current) sputtering, MF (middle frequency) sputtering, as RF sputtering, or as pulse sputtering.
• DC direct current
• MF middle frequency
• RF RF
• pulse sputtering some deposition processes might beneficially apply MF, DC or pulsed sputtering.
• middle frequency is a frequency in the range of 0.5 kHz to 350 kHz, for example, 10 kHz to 50 kHz.
• the sputtering according to the described embodiments can be conducted with three or more cathodes.
• an array of cathodes having 6 or more cathodes, e.g. 10 or more cathodes.
• three or more cathodes or cathode pairs e.g. four, five, six or even more cathodes or cathode pairs can be provided.
• the array can be provided in one vacuum chamber.
• an array can typically be defined such that adjacent cathodes or cathode pairs influence each other, e.g. by having interacting plasma confinement.
• the sputtering can be conducted by a rotary cathode array, such as, but not limited to, a system such as PiVot of Applied Materials Inc..
• static deposition of material on a substrate is done by a reactive sputter process. That means, the stoichiometry of the film is obtained by sputtering either metallic, semi-metallic or compound targets using a mixture of non-reactive gas and reactive gases.
• embodiments described herein may also be suitable for static deposition of metal layers or semiconducting layers using only non-reactive gas as processing gas.
• the apparatus and method of embodiments of the present invention may allow having different local process pressure along the horizontal direction, particularly different process pressure at the substrate edges compared to the inner areas of the substrate.
• some embodiments described herein relate to apparatus and methods of depositing a layer of a material on a substrate.
• uniformity and/or plasma stability is a critical parameter to be considered.
• Reactive sputtering processes for example, deposition processes during which a material is sputtered under oxygen atmosphere or another reactive atmosphere in order to deposit a layer containing an oxide or the like of the sputtered material, need to be controlled with respect to plasma stability.
• a reactive deposition process has a hysteresis curve.
• the reactive deposition process can be, for example, a deposition of aluminum oxide (A1203) or silicon oxide (Si02) or Indium-Gallium-Zinc-Oxide (IGZO), wherein aluminum, silicon, indium, gallium or zinc are sputtered from a cathode while oxygen is provided in the plasma.
• aluminum oxide, silicon oxide or Indium- Gallium-Zinc-Oxide can be deposited on a substrate.
• the hysteresis curve typically is a function of deposition parameters such as the voltage provided to the sputter cathode in dependence of the flow of a processing gas, such as oxygen.
• Embodiments described herein allow for improved uniformity in the event different plasma density or different reactive gas consumption at different positions along the substrate transport direction, referred to as horizontal direction hereinafter, exist during static reactive sputter processes. These differences also result in a non-uniform deposition on the substrates.
• Embodiments described herein allow compensating a variation of film properties in horizontal direction, i.e. substrate transport direction or the direction perpendicular to the rotation axis of rotary cathodes.
• embodiments as described herein are particularly configured for providing a uniform coating on the complete substrate, i.e. including the substrate edges in transport direction of the substrate.
• the partial pressure of at least one of the processing gases is different at the first outer deposition assembly and or the second outer deposition assembly along the horizontal direction, i.e. along the substrate transport direction.
• the partial pressure of the reactive gas e.g. oxygen
• a second processing gas e.g. a non-reactive or inert gas is additionally varied. Accordingly, the overall pressure can be essentially constant.
• processing gases can include non-reactive gases such as argon (Ar) and/or reactive gases such as oxygen (02), nitrogen (N2), hydrogen (H2), water (H20), ammonia (NH3), Ozone (03), activated gases or the like.
• non-reactive gases such as argon (Ar) and/or reactive gases such as oxygen (02), nitrogen (N2), hydrogen (H2), water (H20), ammonia (NH3), Ozone (03), activated gases or the like.
• the edges of the substrate embodiments of the present invention provide an apparatus and a method with which a uniform film thickness over the substrate including the substrate edges in transport direction can be achieved. Therefore, according to embodiments which can be combined with other embodiments herein, as exemplarily shown in FIG. 2, a gas distribution system is provided which is configured for supplying different processing gas conditions to the first outer deposition assembly and/or the second outer deposition assembly. [0027] Referring to FIG.
• an apparatus for deposition of material on a substrate having a deposition array 222 including a first outer deposition assembly 301 with at least a first cathode 122 and a second outer deposition assembly 302 opposing the first outer deposition assembly 101 with at least a second cathode 122 is shown.
• an inner deposition assembly 303 including at least one inner cathode 122 located between the first outer deposition assembly 301 and the second outer deposition assembly 302 is provided.
• each of the first outer deposition assembly 301 and second outer deposition assembly 302 includes one cathode, wherein the inner deposition assembly 301 includes ten cathodes.
• the apparatus includes a processing gas distribution system configured for providing a processing gas to the deposition array 222.
• the gas distribution system may be configured for controlling the flow rate of processing gas independently for the outer deposition assemblies 301, 302 and the inner deposition assembly 303. Therefore, process parameters, e.g. partial gas pressure and/or amount of processing gas supplied, at the edges of a substrate to be coated can be modified and adjusted independently from process parameters at the inner area of the substrate to be coated, such that a uniform thickness of a coating may be achieved. Accordingly, thickness drops at the edges of the substrate in transport direction can substantially be avoided.
• the substrate transport direction is indicated by arrow 111.
• the flow rate of at least one processing gas can be varied independently for at least one of the first outer deposition assembly and the second outer deposition assembly, e.g. by MFCs as exemplarily shown in FIG. 2.
• the processing gas distribution system is configured for providing a first processing gas condition to the first outer deposition assembly 301 and the second outer deposition assembly 302 and for providing a second processing gas condition to the inner deposition assembly 303.
• the apparatus includes a gas distribution system configured for providing a processing gas with 3-fold horizontal segmentation, wherein the a first segment includes the first outer deposition assembly 301, a second segment includes the second outer deposition assembly 302, and a third segment includes the inner deposition assembly 303.
• the gas distribution system may include multiple gas inlet points 138 within multiple gas lines 116.
• the multiple gas lines 116 e.g. conduits having openings therein, can be placed between pairs of cathodes 122 of the deposition array 222, parallel to their longitudinal axes along the horizontal direction.
• the gas distribution system may include a first mass flow controller 234 configured for controlling the amount of processing gas to the first outer deposition assembly 301 and the second outer deposition assembly 302, and a second mass flow controller 134 configured for controlling the amount of processing gas to the inner deposition assembly 303.
• a first mass flow controller 234 configured for controlling the amount of processing gas to the first outer deposition assembly 301 and the second outer deposition assembly 302
• a second mass flow controller 134 configured for controlling the amount of processing gas to the inner deposition assembly 303.
• three MFCs are shown: one second MFC 134 for controlling the amount of processing gas to the inner deposition assembly 303 and two first MFCs 234 for controlling the amount of processing gas to the first outer deposition assembly 301 and to the second outer deposition assembly 302, respectively.
• the two first MFCs 234 for controlling the amount of processing gas to the first outer deposition assembly 301 and second outer deposition assembly 302 may be equal.
• the processing gas distribution system may have two gas tanks 136 containing processing gas.
• the flow rates and/or the amount of non- reactive gas and/or reactive gas present in the processing gas may be controlled by MFCs 135.
• the processing gas is fed to multiple gas inlet points 138 within multiple gas lines 116 through gas conduits or gas pipes 133 and 233 via MFCs 134 and 234, respectively.
• the flow rate of one or more of the processing gases i.e. the amount of one or more of the processing gases
• MFCs, needle valves, and/or other flow rate control elements can be used to control the flow rate of one or more processing gases independently for segments of the gas distribution system or the amount of one or more processing gases independently for segments of the gas distribution system.
• the gas distribution system may be configured for providing different processing gas mixtures, especially with a variation of reactive gases, to the first outer deposition assembly 301 and the second outer deposition assembly 302 compared to the inner deposition assembly. Therefore, with exemplary reference to FIG. 3A, the first outer deposition assembly 301 may be connected to a first group of tanks 141 for providing a first composition of reactive gases, the second outer deposition assembly 302 may be connected to a second group of tanks 142 for providing a second composition of reactive gases, and the inner deposition assembly may be connected to a third group 143 of tanks for providing a third composition of reactive gases to the inner deposition assembly.
• the first composition of reactive gases supplied to the first outer deposition assembly 301 may correspond to the second composition of reactive gases supplied to the second outer deposition assembly 302. Therefore, embodiments of the apparatus, as exemplarily shown in FIG. 3A, are configured for providing a different flow rate of processing gas and/or different amount of processing gas and/or different processing gas mixture, especially with a variation of reactive gases, independently for the first outer deposition assembly 301 the second outer deposition assembly 302 and the inner deposition assembly 303.
• FIG. 3A shows a schematic cross-sectional view of a deposition apparatus 100 according to embodiments as described herein.
• one vacuum chamber 102 for deposition of layers therein is shown.
• further chambers 103 can be provided adjacent to the chamber 102.
• the vacuum chamber 102 can be separated from adjacent chambers by a valve having a valve housing 104 and a valve unit 105. After the carrier 114 with the substrate 14 thereon is, as indicated by arrow 1, inserted in the vacuum chamber 102, the valve unit 105 can be closed.
• the atmosphere in the vacuum chambers 102 and 103 can be individually controlled by generating a technical vacuum, for example, with vacuum pumps connected to the chamber 102 and 103, and/or by inserting processing gases in the deposition region in the chamber 102.
• a technical vacuum for example, with vacuum pumps connected to the chamber 102 and 103, and/or by inserting processing gases in the deposition region in the chamber 102.
• the large area substrates are supported by a carrier.
• embodiments described herein are not limited thereto and other transportation elements for transporting a substrate through a processing apparatus or processing system may be used.
• a transport system is provided in order to transport the carrier 114, having the substrate 14 thereon, into and out of the chamber 102.
• substrate as used herein shall embrace inflexible substrates, e.g., a glass substrate, a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate.
• deposition sources 122 are provided within the chamber 102.
• the deposition sources can for example be rotatable cathodes having targets of the material to be deposited on the substrate.
• the cathodes can be rotatable cathodes with a magnet assembly 121 therein. Magnetron sputtering can be conducted for depositing of the layers.
• each pair of neighboring cathodes can be connected to a power supply 123.
• each pair of neighboring cathodes can be connected to an AC power supply or each cathode can be connected to a DC power supply.
• the cathodes 122 are connected to an AC power supply such that the cathodes can be biased in an alternating manner.
• AC power supplies 123 such as MF power supplies can for example be provided for depositing layers of A1203.
• the cathodes do not require additional anodes, which can e.g. be removed, as a complete circuit including cathode and anode is provided by a pair of cathodes 122.
• the apparatus may include cathodes 122 and anodes 115, which may be electrically connected to a DC power supply.
• the deposition apparatus can comprise one anode extending along the horizontal direction or at least three anodes, as exemplarily shown in FIG. 3B, which are spaced apart along the horizontal direction.
• Sputtering from a target for e.g. a transparent conductive oxide film is typically conducted as DC sputtering.
• the cathodes may be connected to the DC power supply together with the anode for collecting electrons during sputtering.
• the gas lines 116 can be provided on one side of the anode 115 or a shield and the cathode can be provided on the other side of the anode or shield (see e.g. FIG. 3A).
• the gas can be provided in the deposition area through openings (not shown) in the anode or shield.
• the gas lines or conduits and the cathodes may also be provided in the same side of the anode or shield.
• one or more of the cathodes can each have their corresponding, individual voltage supply.
• one power supply can be provided per cathode for at least one, some or all of the cathodes.
• at least a first cathode can be connected to a first power supply
• a second cathode can be connected to a second power supply.
• materials like ⁇ , IZO, IGZO or MoN might be deposited with a DC sputter deposition process.
• the gas distribution system of apparatus 100 may include six gas tanks 136 containing processing gas.
• the flow rate of non-reactive gas and/or reactive gas present in the processing gas can be controlled by MFCs 135.
• the processing gas may be fed to multiple gas inlet points 138 (not shown) within multiple gas lines 126 through gas conduits or gas pipes 133, 233 and 333 via MFCs 134, 234 and 334, respectively.
• the embodiments of the apparatus as described herein allow for providing a different flow rate of processing gas and/or different processing gas mixture independently to the first outer deposition assembly 301, the second outer deposition assembly 302 and the inner deposition assembly 303. Accordingly, an apparatus for depositing material on a substrate is provided with which a thickness drop at the substrate edges in transport direction can substantially be avoided.
• valve units 105 are closed during deposition, with a plurality of rotary cathodes, e.g. three or more rotary cathodes.
• a static deposition process e.g. valve units 105 are closed during deposition, with a plurality of rotary cathodes, e.g. three or more rotary cathodes.
• the substrate 14 is moved into the position for deposition in the deposition area.
• the process pressure can be stabilized.
• the cathode magnet assemblies 121 can be rotated toward the front to deposit the correct stoichiometry of the material to be deposited onto the static substrate until end of deposition.
• the apparatus may include a controller 500 which is configured for controlling at least one process parameter of the first outer deposition assembly and the second outer deposition assembly. Further, the controller 500 may be configured for controlling at least one process parameter of the inner deposition assembly.
• a deposition assembly e.g. the first outer deposition assembly, the second outer deposition assembly and the inner deposition assembly
• the at least one processing parameter is at least one selected from the group consisting of: a power supplied to the first outer deposition assembly and the second outer deposition assembly, an amount of processing gas supplied to the first outer deposition assembly and the second outer deposition assembly, and a magnetic field at the first outer deposition assembly and the second outer deposition assembly.
• the controller 500 is configured for controlling a first power supply for supplying a first power to the first outer deposition assembly and the second outer deposition assembly.
• the controller can also be configured for controlling a second power supply for supplying a second power to the inner deposition assembly.
• the first power supply for supplying a first power to the first outer deposition assembly and the second outer deposition assembly can include two separate power supplies 123a, 123c for supplying the first power to the first outer deposition assembly and the second outer deposition assembly.
• deposition sources 122 are provided within the chamber 102.
• the deposition sources can for example be rotatable cathodes having targets of the material to be deposited on the substrate.
• the cathodes can be rotatable cathodes with a magnet assembly 121 therein.
• magnetron sputtering can be conducted for depositing of material on a substrate.
• the deposition process can be conducted with rotary cathodes and a rotating magnet assembly, i.e. a rotating magnet yoke therein.
• magnet sputtering refers to sputtering performed using a magnetron, i.e. a magnet assembly, that is, a unit capable of generating a magnetic field.
• a magnet assembly consists of one or more permanent magnets.
• permanent magnets are typically arranged within a rotatable target or coupled to a planar target in a manner such that the free electrons are trapped within the generated magnetic field generated below the rotatable target surface.
• Such a magnet assembly may also be arranged coupled to a planar cathode.
• magnetron sputtering can be realized by a double magnetron cathode, i.e.
• cathodes 122 such as, but not limited to, a TwinMagTM cathode assembly.
• target assemblies including double cathodes can be applied.
• the cathodes in a deposition chamber may be interchangeable. Accordingly, the targets are changed after the material to be sputtered has been consumed.
• sputtering can be conducted as DC sputtering, MF (middle frequency) sputtering, as RF sputtering, or as pulse sputtering.
• FIGS. 3A and 3B a plurality of cathodes 122 with a magnet assembly 121 or magnetron provided in the cathodes are shown.
• the sputtering according to the described embodiments can be conducted with three or more cathodes.
• an array of cathodes or cathode pairs can be provided.
• three or more cathodes or cathode pairs e.g.
• the array can be provided in one vacuum chamber. Further, an array can typically be defined such that adjacent cathodes or cathode pairs influence each other, e.g. by having interacting plasma confinement.
• the magnet assemblies can be provided within a backing tube or with the target material tube.
• FIG. 3A shows 3 pairs of cathodes, each providing a deposition source.
• the pair of cathodes may have an AC power supply, e.g. for MF sputtering, RF sputtering or the like.
• MF sputtering can be conducted in order to provide desired deposition rates.
• the magnet assemblies of the cathodes in the vacuum chamber 102 can have essentially the same rotational positions or can at least all be directed towards the substrate 14 or a corresponding deposition area.
• the deposition area is an area or region with a deposition system, which is provided and/or arranged for the depositing (the intended deposition) of the material on a substrate.
• the plasma sources in one chamber can have varying plasma positions (rotational positions for rotary cathodes) during the deposition of the layer on the substrate.
• the magnet assemblies or magnetrons can be moved relative to each other and/or relative to the substrate, e.g. in an oscillating or back-and- forth manner, in order to increase the uniformity of the layer to be deposited.
• the magnet assemblies of the first outer deposition assembly and the second outer deposition assembly may be moved differently compared to the magnet assemblies of the inner deposition assembly for realizing a higher deposition rate of material of the first outer deposition assembly and the second outer deposition assembly compared to the inner deposition assembly.
• the first outer deposition assembly 301 includes a first magnet assembly for generating a first magnetic field and the second outer deposition assembly 302 includes a second magnet assembly for generating the first magnetic field, and the inner deposition assembly includes a second magnet assembly for generating a second magnetic field.
• the first magnetic field can be different from the second magnetic field due to at least one means selected from the group consisting of: selection of magnetic material, selection of geometry of the magnetic assembly, a controllable electromagnet, an element for controlling the first magnetic field and/or the second magnetic field.
• the element for controlling the first magnetic field and/or the second magnetic field can for example be an eccentric arrangement 410 configured for varying the position of the magnetic assembly 121 in relation to the cathodes, as exemplarily shown in FIGS. 4A and 4B.
• the magnetic field at the outer deposition assemblies 301 and 302, as exemplarily shown in FIGS. 3A and 3B, may be controlled and adjusted for realizing higher deposition rates at the outer deposition assemblies 301 and 302 such that thickness drops at the edges of a layer deposited on a substrate can substantially be avoided.
• FIG 4A a schematic cross-sectional view of a rotary cathode 122 according to embodiments described herein is shown, wherein the eccentric arrangement 410 is in a position in which the distance D between the magnetic assembly 121 and the cathode 122 is minimized.
• FIG 4B shows a schematic cross-sectional view of a rotary cathode 122 according to embodiments described herein is shown, wherein the eccentric arrangement 410 is in a position in which the distance D between the magnetic assembly 121 and the cathode 122 is maximized.
• large area substrates or respective carriers wherein the carriers have a plurality of substrates, may have a size of at least 0.67 m 2 .
• the size can be about 0.67m2 (0.73x0.92m - Gen 4.5) to about 8 m 2 , more typically about 2 m 2 to about 9 m 2 or even up to 12 m 2 .
• the substrates or carriers for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, are large area substrates as described herein.
• a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
• the target material can be selected from the group consisting of: aluminum, silicon, tantalum, molybdenum, niobium, titanium, indium, gallium, zinc, tin, silver and copper. Particularly, the target material can be selected from the group consisting of indium, gallium and zinc.
• the reactive sputter processes provide typically deposited oxides of these target materials. However, nitrides or oxi-nitrides might be deposited as well.
• the methods provide a sputter deposition for a positioning of the substrate for a static deposition process.
• large area substrate processing such as processing of vertically oriented large area substrates
• it can be distinguished between static deposition and dynamic deposition.
• the substrates and/or the carriers described herein and the apparatuses for utilizing the gas distribution systems described herein can be configured for vertical substrate processing.
• the term vertical substrate processing is understood to distinguish over horizontal substrate processing. That is, vertical substrate processing relates to an essentially vertical orientation of the carrier and the substrate during substrate processing, wherein a deviation of a few degrees, e.g.
• the gas distribution systems according to embodiments described herein may also be utilized for substrate orientations other than essentially vertical, e.g. a horizontal substrate orientation.
• a horizontal substrate orientation the cathode array would for example also be essentially horizontal.
• a dynamic sputtering i.e. an inline process where the substrate moves continuously or quasi-continuously adjacent to the deposition source, would be easier due to the fact the process can be stabilized prior to the substrates moving into a deposition area, and then held constant as substrates pass by the deposition source.
• a dynamic deposition can have other disadvantages, e.g. particle generation. This might particularly apply for TFT backplane deposition.
• a static sputtering can be provided, e.g. for TFT processing, wherein the plasma can be stabilized prior to deposition on the pristine substrate.
• a static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an average substrate position that is essentially constant during deposition, a dithering substrate position during deposition, a wobbling substrate position during deposition, a deposition process for which the cathodes provided in one chamber, i.e. a predetermined set of cathodes provided in the chamber, a substrate position wherein the deposition chamber has a sealed atmosphere with respect to neighboring chambers, e.g. by closing valve units separating the chamber from an adjacent chamber, during deposition of the layer, or a combination thereof.
• a static deposition process can be understood as a deposition process with a static position, a deposition process with an essentially static position, or a deposition process with a partially static position of the substrate.
• a static deposition process, as described herein, can be clearly distinguished from a dynamic deposition process without the necessity that the substrate position for the static deposition process is fully without any movement during deposition.
• a deviation from an fully static substrate position e.g.
• oscillating, wobbling or otherwise moving substrates as described above can additionally or alternatively be provided by a movement of the cathodes or the cathode array, e.g. wobbling, oscillating or the like.
• the substrate and the cathodes (or the cathode array) can move relative to each other, e.g. in substrate transport direction, in a lateral direction essentially perpendicular to the substrate transport direction or both.
• the apparatus 100 including a deposition array having three or more cathodes, a first outer deposition assembly defines a first edge section 501 in a substrate transport direction and a second outer deposition assembly defines a second edge section 502 opposing the first edge section in substrate transport direction.
• the deposition array includes a third edge section 503 including first ends of the at least one inner cathode of the inner deposition assembly and a forth edge section 504 including opposing second ends of the cathodes of the remaining section 505 of the cathode array.
• the extension of the third edge section 503 and/ or the fourth edge section in direction of the axis of the cathodes may correspond to at least 5% of the total cathode length, particularly to at least 10% of the total cathode length, particularly to at least 15% of the total cathode length, respectively.
• an apparatus for depositing material on a substrate is provided with which thickness drops at the edges of the substrate in transport direction as well as at the substrate edges perpendicular to the substrate transport direction can substantially be avoided.
• FIG. 5 further embodiments of the apparatus described herein provide a processing gas distribution system having segments located at the first edge section 501, at the second edge section 502, at the third edge section 503, at the fourth edge section 504 and at the remaining section 505 of the deposition array 222.
• multiple gas inlet points 138 within multiple gas lines 116 may be provided.
• each gas line can have three or more openings, such as six or more openings, e.g. 6 to 20 openings.
• the multiple gas lines 116 can be placed between pairs of cathodes 122, e.g. parallel to their longitudinal axes along the horizontal direction.
• the processing gas can be supplied by five MFCs 134, one MFC for each section. Accrodingly, the amount of processing gas supplied to each individual section may be controlled independently. Accordingly, the partial pressure of the processing gas provided to the individual sections may be adjusted independently.
• each of the five MFCs 134 may be connected to two tanks containing processing gas, similar as described in connection with the embodiments as shown in FIGS. 2, 3 A and 3B. Accordingly, the flow rate and/or amount of non-reactive gas and/ or reactive gas present in the processing gas in the individual sections 501, 502, 503, 504 and 505 can be controlled by MFCs 135, as exemplarily described in connection with the embodiment shown in FIG. 2.
• the MFCs 134 connected to the first edge section 501, the second edge section 502, the third edge section 503, and the fourth edge section 504 can be connected to one single gas tank or one single gas tank battery including two tanks for each of the processing gases.
• the MFC 134 connected to the remaining section located between the first edge section, the second edge section, the third edge section and the forth edge section may be connected to another single gas tank or another single gas tank battery including two tanks for each of the processing gases.
• an apparatus for deposition of material on a substrate having a gas distribution system which is configured for providing a first processing gas condition to the first edge section, the second edge section, the third edge section and the forth edge section for depositing the material at a higher rate than in the remaining section located between the first edge section, the second edge section, the third edge section and the forth edge section.
• an apparatus is provided for providing a uniform coating on the complete substrate, i.e. including the substrate edges in transport direction of the substrate as well as the substrate edges perpendicular to the substrate transport direction.
• Embodiments corresponding to FIGS. 2, 3 A and 3B show gas distribution systems with one gas line per two targets.
• gas distribution systems can have any number of gas lines.
• gas distribution systems can have four gas lines to thirteen gas lines.
• each gas line can have two to thirty gas inlet points.
• each gas line can have three to twenty gas inlet points, such as five to ten, e.g. nine, gas inlet points.
• embodiments described herein allow controlling and adjusting the processing gas composition at the outer deposition assemblies in transport direction.
• embodiments described herein allow controlling and adjusting the processing gas condition at the edge sections of the cathode array as described herein, in particular with reference to the embodiment as shown in FIG. 5.
• Embodiments described herein provide precise control for depositing layers having substantially constant thickness over the complete substrate including its edges.
• the cathode array may comprise three or more rotary sputter targets, particularly the cathode array may comprise eight rotary sputter targets, more particularly the cathode array may comprise twelve rotary sputter targets.
• the cathodes of the cathode array are spaced from one another such that their longitudinal axes are parallel to each other and wherein the longitudinal axes are arranged equidistant from the substrate to be treated.
• a deposition array having three or more cathodes is provided, wherein the deposition array includes a first outer deposition assembly 301 comprising at least a first cathode of the three or more cathodes, a second outer deposition assembly 302 opposing the first outer deposition assembly 301 including at least a second cathode of the three or more cathodes, and an inner deposition assembly 303 including at least one inner cathode located between the first outer deposition assembly 301 and the second outer deposition assembly 302.
• step 602 material on the substrate with the at least one of the first outer deposition assembly 301 and the second outer deposition assembly 302 is deposited at a higher rate than with the inner deposition assembly. Accordingly, a method for deposition of material on a substrate is provided with a thickness drop at the substrate edges in transport direction can substantially be avoided. Particularly, the method as described herein allows for deposition of uniform coatings on substrates, particularly on large area substrates during static deposition processes.
• depositing material on the substrate with the at least one of the first outer deposition assembly and the second outer deposition assembly includes controlling at least one processing parameter selected from the group consisting of: controlling a power supplied to the first outer deposition assembly and/or the second outer deposition assembly, controlling an amount of processing gas supplied to the first outer deposition assembly and/or the second outer deposition assembly, controlling a first magnetic field at the first outer deposition assembly and/or the second outer deposition assembly, and controlling a second magnetic field at inner deposition assembly.
• a method for depositing material on a substrate is provided with which material can be deposited at the first outer deposition assembly 301 and/or the second outer deposition assembly (302) at a higher rate than at the inner deposition assembly 303 on the same substrate during the same time. Accordingly, the method as described provides for depositing material on a substrate such that a thickness drop at the substrate edges in transport direction can substantially be avoided.
• controlling the first magnetic field and/ or the second magnetic field may include at least one selected from the group consisting of: selecting an magnetic material, selecting an geometry of an magnetic arrangement, controlling an electromagnet, and using an element for controlling the first magnetic field and/or the second magnetic field.
• the element for controlling the first magnetic field and/or the second magnetic field can be an eccentric arrangement configured for varying the position of the magnetic assembly in relation to the cathodes as exemplarily described in connection with FIG. 4A and FIG. 4B above.
• step 601 may include providing a deposition array in which the first outer deposition assembly defines a first edge section in a substrate transport direction and the second outer deposition assembly defines a second edge section opposing the first edge section in substrate transport direction, wherein the deposition array further includes a third edge section including first ends of the at least one inner cathode of the inner deposition assembly and a forth edge section including opposing second ends of the cathodes of the remaining section of the cathode array.
• step 602 may include depositing material on the substrate at the first edge section, the second edge section, the third edge section and the forth edge section at a higher rate than in the remaining section located between the first edge section, the second edge section, the third edge section and the forth edge section.
• the material is deposited on the substrate, wherein the substrate is positioned for a static deposition process.
• the material of the target can be deposited in the form of an oxide, a nitride, or an oxi-nitride of the target material, i.e. with a reactive sputtering process.

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• 2014
  • 2014-04-17 CN CN201480077982.2A patent/CN106165058B/zh active Active
  • 2014-04-17 KR KR1020167032049A patent/KR102005540B1/ko active IP Right Grant
  • 2014-04-17 WO PCT/EP2014/057920 patent/WO2015158391A1/en active Application Filing
• 2015
  • 2015-04-14 TW TW104111913A patent/TW201604937A/zh unknown

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