WO2015141424A1 - Optical interconnection device - Google Patents

Optical interconnection device Download PDF

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Publication number
WO2015141424A1
WO2015141424A1 PCT/JP2015/055525 JP2015055525W WO2015141424A1 WO 2015141424 A1 WO2015141424 A1 WO 2015141424A1 JP 2015055525 W JP2015055525 W JP 2015055525W WO 2015141424 A1 WO2015141424 A1 WO 2015141424A1
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WO
WIPO (PCT)
Prior art keywords
substrate
light
light emitting
light receiving
receiving element
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Application number
PCT/JP2015/055525
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French (fr)
Japanese (ja)
Inventor
吉司 小川
孝裕 金子
Original Assignee
株式会社ブイ・テクノロジー
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Publication of WO2015141424A1 publication Critical patent/WO2015141424A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • the present invention relates to an optical interconnection device capable of realizing optical interconnection between substrates.
  • Optical interconnection between substrates such as between chips or boards is realized by optical transmission using the space between stacked substrates.
  • an apparatus for realizing such an optical interconnection is provided with a light-emitting element that transmits an optical signal to another substrate and a light-receiving element that receives an optical signal from the other substrate.
  • a plurality of such substrates are stacked, and light receiving elements on other substrates are arranged so as to face the light emitting elements provided on one substrate to perform spatial transmission of optical signals (for example, the following patents) Reference 1).
  • two substrates that transmit and receive optical signals need to arrange a light receiving element of another substrate on a light emitting element of one substrate.
  • the arrangement pattern of the light emitting element and the light receiving element in FIG. 1 has individual patterns, and it is necessary to combine a plurality of types of substrates in order to transmit and receive optical signals between the stacked substrates. For this reason, it is necessary to individually design the pattern of the light emitting elements and the light receiving elements on each substrate.
  • the present invention is an example of a problem to deal with such a problem. That is, it is possible to easily perform alignment between substrates that transmit and receive optical signals without cost and time for forming individual substrates, and to realize optical interconnection between substrates. Is the purpose.
  • an optical interconnection device has the following configuration among several inventions described in the specification.
  • An optical interconnection device that arranges and arranges a plurality of substrates to transmit and receive optical signals between the substrates, and the plurality of substrates have the same arrangement pattern of light emitting elements and light receiving elements on each substrate.
  • the direction of the arrangement pattern of one substrate is rotated by a set angle with respect to the direction of the arrangement pattern of the other substrate, and on the optical axis of the light emitting element provided on one substrate
  • An optical interconnection device in which a light receiving element of another substrate is arranged.
  • (A) is an example in which the planar shape of the substrate is rectangular (square), (b) is an example in which the planar shape of the substrate is rectangular (rectangular), and (c) is a light emitting element or a light receiving device of a certain form. This is an example in which a light emitting element or a light receiving element of another form is formed in the element region. It is explanatory drawing which showed the example of the mounting structure of the board
  • (A) is a mounting example of a single unit, and (b) is a mounting example in a state of being stacked in multiple stages. It is explanatory drawing which showed the electric power feeding structure in the optical interconnection apparatus which concerns on embodiment of this invention.
  • (A) shows a structure using through holes
  • (b) shows a structure in which wires are individually connected. It is explanatory drawing which showed the specific example of the light emitting element or light receiving element in the optical interconnection apparatus which concerns on embodiment of this invention.
  • (A) shows the first light-emitting element A and the second light-receiving element C
  • (b) shows the first light-receiving element B and the second light-emitting element D.
  • It is explanatory drawing which showed the specific method of forming the light emitting element or light receiving element of the optical interconnection apparatus which concerns on embodiment of this invention.
  • (A) to (d) show the respective steps. It is explanatory drawing which showed the specific structural example of the optical interconnection apparatus which concerns on embodiment of this invention.
  • FIG. 1 shows a basic configuration of an optical interconnection apparatus according to an embodiment of the present invention.
  • the optical interconnection device 1 is a device for transmitting and receiving optical signals between the substrates 10 by stacking a plurality of substrates 10 (10a to 10d) such as chips and boards.
  • the arrangement patterns of the light emitting elements 11 and the light receiving elements 12 on the individual substrates 10 are common (for example, coincident).
  • the arrangement pattern referred to here indicates an aspect of a planar positional relationship between the light emitting element 11 and the light receiving element 12 arranged on one substrate 10.
  • the number of the light emitting elements 11 and the light receiving elements 12 may be singular or plural, it is assumed that the light emitting elements 11 and the light receiving elements 12 exist in pairs.
  • two substrates 10 (for example, the substrate 10a and the substrate 10b) that transmit and receive optical signals have a set angle ⁇ that is the direction Sa of the arrangement pattern of one substrate 10a with respect to the direction Sb of the arrangement pattern of the other substrate 10b.
  • the light receiving element 12 of another substrate 10b is arranged on the optical axis of the light emitting element 11 provided on one substrate 10a.
  • the plurality of substrates 10 a to 10 d are stacked so that one surface thereof is parallel to each other, and the above-described “rotation” is rotation around an axis perpendicular to one surface of the substrate 10.
  • optical signals are transmitted and received not only between the substrate 10a and the substrate 10b, but also between the substrate 10b and the substrate 10c, and between the substrate 10c and the substrate 10d, and the arrangement pattern direction Sb of the substrate 10b is the substrate 10c.
  • the “rotation” is a coaxial rotation around an axis perpendicular to one surface of each substrate 10.
  • a plurality can be formed.
  • the plurality of substrates 10 on which the light emitting element 11 and the light receiving element 12 are arranged can be formed at low cost and in a short time.
  • the positional relationship between the light emitting element 11 and the light receiving element 12 among the plurality of substrates 10 can be accurately matched, it is possible to realize optical interconnection between the substrates with reduced crosstalk.
  • the plurality of substrates 10 are arranged in a stacked manner, adjustment in one direction by rotating each substrate 10 by a set angle is sufficient, so that the adjustment work at the time of assembling the apparatus can be simplified.
  • each substrate 10 the arrangement pattern of the light emitting elements 11 and the light receiving elements 12 is such that the position of the light emitting elements 11 rotated by a set angle ⁇ with respect to one point Os on the substrate 10 is the position of the light receiving elements 12. It has become.
  • the planar shape of each substrate 10 may be any shape. When the planar shapes of the plurality of substrates 10 are the same and the planar shapes are invariable with respect to the rotation of the set angle ⁇ about the single point Os, each substrate 10 is supported by a frame having the same shape. Therefore, it becomes easy to support and align the substrate 10.
  • n is an integer of 3 or more
  • ⁇ is an integer of 3 or more
  • FIG. 2 shows a form example of the light emitting element and the light receiving element formed on the substrate 10.
  • the light emitting element 11 and the light receiving element 12 arranged on the substrate 10 can be in the following four forms.
  • the 1st light emitting element A is a form which radiate
  • the first light receiving element B is configured to receive light incident on the substrate 10 from the other surface side of the substrate 10 on one surface side of the substrate 10.
  • the second light emitting element D has a form in which light emitted from the one surface side of the substrate 10 into the substrate 10 is emitted into the space from the other surface side of the substrate 10.
  • the second light receiving element C is configured to receive light incident on the substrate 10 from the other surface side of the substrate 10 on one surface side of the substrate 10.
  • the light emitting element 11 includes a light emitting portion 11a and a light shielding portion 11b
  • the light receiving element 12 includes a light receiving portion 12a and a light shielding portion 12b.
  • the first light emitting element A includes a light emitting portion 11a on one surface side of the substrate 10 and a light shielding portion 11b on the back surface side of the light emitting portion 11a.
  • the first light receiving element B includes a light receiving portion 12 a on one surface side of the substrate 10 and a light shielding portion 12 b on the surface on the one surface side of the substrate 10.
  • the second light emitting element D includes a light emitting unit 11 a on one surface side of the substrate 10 and a light shielding unit 11 b on the surface of one surface side of the substrate 10.
  • the second light receiving element C includes a light receiving portion 12a on one side of the substrate 10 and a light blocking portion 12b on the back side of the light receiving portion 12a.
  • the first light emitting element A and the first light receiving element B are paired between two substrates that transmit and receive optical signals, and the second light emitting element D and The second light receiving element C is paired.
  • the process of arranging the light emitting element 11 and the light receiving element 12 with respect to the substrate 10 can be simplified. It becomes possible.
  • lenses (microlenses) 13 corresponding to the individual light emitting elements 11 and light receiving elements 12 can be provided on the other surface side of the substrate 10.
  • the substrate 10 needs to be light transmissive.
  • Such light emitting element 11 and light receiving element 12 can be formed by using infrared light as the light transmitted through the substrate 10 and using a semiconductor substrate (such as Si) that can transmit infrared light as the substrate 10.
  • FIG. 3 shows an arrangement pattern example of the light emitting elements 11 and the light receiving elements 12 formed on the substrate 10.
  • the four forms of the first light emitting element A, the first light receiving element B, the second light receiving element C, and the second light emitting element D described above are arranged on the substrate 10.
  • a position obtained by rotating the position of the first light emitting element A with respect to one point Os on the substrate 10 by a set angle ⁇ becomes the position of the first light receiving element B, and the position of the second light receiving element C is determined.
  • a position rotated by a set angle ⁇ with respect to one point Os on the substrate 10 is a position of the second light emitting element D.
  • two substrates 10 are stacked so that one point Os is coaxial, and the arrangement pattern direction S of one substrate 10 is the arrangement pattern direction S ′ of the other substrate 10. Is positioned so as to be rotated by a set angle ⁇ . Thereby, the position of the first light emitting element A on one substrate 10 and the position of the first light receiving element B on the other substrate 10 overlap in a plane, and the second light receiving element C and the second light emitting element D The positions are overlapped in a plane, so that an optical signal can be transmitted and received between the first light emitting element A and the first light receiving element B, and the second light receiving element C and the second light emitting element D Optical signals can be transmitted and received between the two.
  • the four types of light emitting elements 11 and light receiving elements 12 of the first light emitting element A, the first light receiving element B, the second light receiving element C, and the second light emitting element D are arranged on one substrate 10.
  • bidirectional transmission / reception of optical signals between the two substrates 10 becomes possible.
  • FIG. 4 shows another example of the arrangement pattern of the light emitting elements 11 and the light receiving elements 12 formed on the substrate 10.
  • the planar shape of the substrate 10 is a rectangle (square), and the first light emission is performed at a position that is equidistant from the point Os on the substrate 10 and at an angle of 90 °.
  • An element A, a first light receiving element B, a second light receiving element C, and a second light emitting element D are arranged.
  • two substrates 10 that transmit and receive optical signals are stacked so that one point Os overlaps, and the direction of the arrangement pattern of one substrate 10 is 90 ° with respect to the direction of the arrangement pattern of another substrate 10.
  • an optical signal can be transmitted and received between the first light-emitting element A on one substrate 10 and the first light-receiving element B on another substrate 10.
  • Optical signals can be transmitted and received between the second light receiving element C and the second light emitting element D on another substrate.
  • FIG. 1 shows an electrode structure that performs electrical connection between the substrates 10 when the plurality of substrates 10 are stacked.
  • power supply pads 14 a and 14 b are arranged on one surface side of the substrate 10
  • power supply bumps 15 a and 15 b are arranged on the other surface side of the substrate 10.
  • the power supply pads 14a on one substrate 10 and the power supply bumps 15a on the other substrate 10 are connected to each other.
  • the power supply pad 14b in the substrate 10 and the power supply bump 15b in the other substrate are connected, and the respective connections are connected to the + power supply and the ⁇ power supply.
  • the power supply pads 14a and 14b are connected to the light emitting element 11 and the light receiving element 12 installed on one surface side of the substrate 10 via a wiring pattern formed on one surface of the substrate 10, and the power supply bumps 15a and 14b are connected.
  • Reference numeral 15b is connected to the light emitting element 11 and the light receiving element 12 installed on one surface side of the substrate 10 via a wiring penetrating the substrate 10 such as a through hole.
  • the positional relationship between the (+) power supply pad 14a and the (+) power supply bump 15a is the same as the positional relationship between the first light emitting element A and the first light receiving element B, and the ( ⁇ ) power supply pad 14b. If the positional relationship between the (-) power supply bump 15b is the same as the positional relationship between the second light receiving element C and the second light emitting element D, the connection relationship is established (the + and-here may be reversed) ).
  • the planar shape of the substrate 10 is rectangular (rectangular), and the first light emission is performed at a position that is equidistant from the point Os on the substrate 10 and separated by an angle of 180 °.
  • a plurality of pairs of the element A and the first light receiving element B and a plurality of pairs of the second light receiving element C and the second light emitting element D are arranged. In one pair, the distance from one point Os to the light emitting element 11 is equal to the distance from one point Os to the light receiving element 12, but in a different pair, the distance from one point Os to the light emitting element 11 and the light receiving element 12 is set. Various settings can be made.
  • two substrates 10 that transmit and receive optical signals are stacked so that one point Os overlaps, and the direction of the arrangement pattern of one substrate 10 is 180 ° with respect to the direction of the arrangement pattern of the other substrate 10.
  • an optical signal can be transmitted and received between the first light-emitting element A on one substrate 10 and the first light-receiving element B on another substrate 10.
  • Optical signals can be transmitted / received between the second light receiving element C in FIG. 2 and the second light emitting element D in the other substrate 10.
  • the direction of the arrangement pattern of one substrate 10 is rotated by 90 ° with respect to the direction of the arrangement pattern of the other substrate 10.
  • an optical signal can be transmitted and received between the first light-emitting element A on one substrate 10 and the first light-receiving element B on the other substrate 10, and the second light-receiving element C on one substrate.
  • a second light emitting element D on another substrate can transmit and receive optical signals.
  • the first light receiving element B is arranged in the region of the first light emitting element A
  • the first light emitting element A is arranged in the region of the second light emitting element D
  • the second light receiving element C is arranged in the region of the first light receiving element B.
  • the light emitting element 11 or the light receiving element 12 of another form may be formed in the region of the light emitting element 11 or the light receiving element 12 of a certain form.
  • FIG. 5 is an explanatory view showing a mounting structure example of the substrate 10.
  • (A) is a mounting example of a single unit, and (b) is a mounting example in a state of being stacked in multiple stages.
  • the substrate 10 can be directly stacked and disposed at a predetermined interval with a spacer or the like interposed therebetween. However, the substrate 10 can be stacked and disposed using the substrate package 100 and the spacing member 101 shown in FIG.
  • the substrate package 100 includes a light transmission window 100a that transmits an optical signal (such as infrared rays) and an external wiring 100b that supplies power to drive the light emitting element 11 and the light receiving element 12 of the substrate 10.
  • an optical signal such as infrared rays
  • the interval holding member 101 includes a leg portion 101a for holding the interval and a light transmission window portion 101b that transmits an optical signal (such as infrared rays).
  • the substrate 10 is supported on the light transmission window portion 100a of the substrate package 100, and a wiring pattern provided on one surface side of the substrate 10 and the external wiring 100b are connected.
  • the interval holding member 101 is placed on one substrate package 100, and another substrate package 100 is placed on the interval holding member 101.
  • the substrate 10 can be arranged in multiple layers with a set interval.
  • a film-like infrared transmission filter 102 is attached so as to cover the light transmission window 100a of the lowermost substrate package 100, and a film-like infrared transmission is provided so as to cover the light transmission window 101b of the uppermost spacing member 101.
  • the filter 103 By attaching the filter 103, noise generated by the incidence of stray light can be prevented.
  • Use of such a substrate package 100 provides advantages such as easy handling of the substrate 10, an increased degree of freedom in wiring, and the elimination of through holes provided in the substrate 10.
  • FIG. 6 is an explanatory view showing a power feeding structure to each board or board package.
  • the substrate 10 or the substrate package 100
  • each substrate 10 or the substrate package 100
  • the electrodes on the uppermost substrate 10 (or the substrate package 100) and the electrodes on the mounting substrate 200 are connected by wires 201.
  • the substrate 10 (or the substrate package 100) of the lowermost layer (or the uppermost layer) from the substrate 10 (or the substrate package 100) of the uppermost layer (or the lowermost layer) via the intermediate substrate 10 (or the substrate package 100). ) Is supplied with electricity.
  • each substrate 10 is individually connected by wires 201.
  • the aforementioned setting angle ⁇ is 90 °, and each substrate 10 is in a state in which the arrangement pattern direction of the light emitting element 11 and the light receiving element 12 is rotated by 90 °.
  • FIG. 7 is an explanatory view showing a specific example of a light emitting element or a light receiving element in the optical interconnection device according to the embodiment of the present invention.
  • (A) shows the first light-emitting element A and the second light-receiving element C
  • (b) shows the first light-receiving element B and the second light-emitting element D.
  • the light emitting element 11 or the light receiving element 12 includes an insulating element isolation layer 20 surrounding the pn junction 10pn on a substrate (semiconductor substrate) 10, and a p-layer electrode and an inner side of the element isolation layer 20 on one side of the substrate 10.
  • a first electrode 21 that is one of the n-layer electrodes is disposed, and a second electrode 22 that is the other of the p-layer electrode and the n-layer electrode is disposed outside the element isolation layer 20.
  • the first electrode 21 is a light-transmitting p-layer electrode 21p
  • the second electrode 22 is a metal n-layer electrode 22n
  • an n + diffusion layer 23 connected to the second electrode 22 is provided on the outer peripheral portion of the element isolation layer 20.
  • Lead wires 21 a and 22 a are connected to the first electrode 21 and the second electrode 22, respectively, and electrical insulation between the first electrode 21 and the second electrode 22 is ensured including the lead wires 21 a and 22 a.
  • the first interlayer insulating film 24 and the second interlayer insulating film 25 are stacked.
  • a light emitting part or a light receiving part is formed on the first electrode 21, and a light shielding layer 30 is formed on the other surface side of the substrate 10 in the light emitting part or the light receiving part. Yes. As a result, light emission or light reception via the light transmissive first electrode 21 becomes possible.
  • the first electrode 21 is a light-reflective metal electrode, and the other surface side of the substrate 10 is a light transmission part 10S. Thereby, light emission or light reception via the light transmission part 10S in the substrate 10 becomes possible.
  • the current flow from the first electrode 21 to the second electrode 22 is n + diffusion formed in the outer peripheral portion of the element isolation layer 20 surrounding the pn junction 10pn. Since the flow path along the layer 23 is formed, relatively uniform light emission or light reception characteristics can be obtained in the light emitting unit or the light receiving unit.
  • FIG. 8 is an explanatory view showing a specific method of forming a light emitting element or a light receiving element of the optical interconnection device according to the embodiment of the present invention.
  • the light emitting / receiving element shown in FIG. 7A will be described as an example.
  • the substrate (Si semiconductor substrate) 10 is processed to form a groove 20e for forming the element isolation layer 20.
  • the groove 20e can be formed by anisotropic etching or the like, for example, and is formed so as to surround the light emitting part or the light receiving part.
  • the n + diffusion layer 23 is formed by ion implantation of n-type impurities.
  • a channel diffusion layer 23 a is formed on the bottom and outside of the groove 20 e, and a contact diffusion layer 23 b for connecting to the second electrode 22 is formed on the surface of the semiconductor substrate 10.
  • an isolation layer 20 is formed by embedding an insulating film such as an oxide film in the groove 20e.
  • a first interlayer insulating film 24 is formed, a contact opening to the n + diffusion layer 23 is formed, and then a pattern of the second electrode 22 is formed.
  • a second interlayer insulating film 25 is formed, and the inside of the element isolation layer 20 that becomes a light emitting portion or a light receiving portion is opened, and a group 13 element, for example, B (boron), Al (aluminum), Ga (gallium)
  • An pn junction 10 pn is formed inside the element isolation layer 20 by implanting an impurity selected from the following.
  • a transparent conductive film such as ITO is formed on the substrate 10 and patterned to form the first electrode 21, and another circuit configuration is formed.
  • a forward voltage Va is applied between the first electrode 21 and the second electrode 22 to cause a current to flow through the pn junction 10pn, and a group 13 element implanted into the semiconductor substrate 10 by an annealing process with Joule heat due to the current,
  • the pn junction 10pn is irradiated with light having a specific wavelength ⁇ from the first electrode 21 side which is a transparent conductive film.
  • dressed photons are generated in the vicinity of the pn junction 10 pn by light irradiation in such an annealing process.
  • the pn junction 10pn in which the dressed photon is generated in this way emits light having a wavelength equivalent to the wavelength ⁇ of the light irradiated in the annealing process.
  • the pn junction portion 10pn functions as a light receiving portion having peak sensitivity with respect to light having a wavelength ⁇ .
  • the first electrode 21 is formed by forming a metal electrode film on the substrate 10 and patterning the first electrode 21, and the second electrode.
  • a forward voltage Va is applied between the two electrodes 22 to cause a current to flow through the pn junction 10 pn, and a group 13 element such as B (boron) or Al (aluminum) implanted into the semiconductor substrate 10 by an annealing process using Joule heat by the current.
  • a group 13 element such as B (boron) or Al (aluminum) implanted into the semiconductor substrate 10 by an annealing process using Joule heat by the current.
  • Ga gallium
  • the light transmission part 10S side is irradiated with light of a specific wavelength ⁇ from the light transmission part 10S side
  • the pn junction part is irradiated by light irradiation in such an annealing process.
  • a dressed photon is generated in the vicinity of 10 pn.
  • the wavelength of light irradiated in the above-described annealing process is set to the same wavelength.
  • the light emission wavelength of the light emitting element 11 and the light reception wavelength of the light receiving element 12 are specified by the wavelength of light irradiated in the annealing process.
  • the wavelength of the light specified here is the wavelength of light that can be transmitted through the substrate 10, and when the substrate 10 is a Si semiconductor substrate, long-wavelength light of near infrared or higher is selected.
  • FIG. 9 shows a specific configuration example of the optical interconnection device according to the embodiment of the present invention.
  • the optical interconnection device 1 performs transmission / reception of optical signals between a plurality of substrates 10 (10-1, 10-2, 10-3), specifically, between the substrate 10-1 and the substrate 10-2.
  • the optical signal is transmitted and received bidirectionally, and the optical signal is transmitted and received bidirectionally between the substrate 10-2 and the substrate 10-3.
  • the light emitting element array region 50 in which the light emitting elements 11 are gathered and the light receiving element array region 60 in which the light receiving elements are gathered are arranged along the four sides of each rectangular substrate 10 and are driven at the center of the substrate 10.
  • the part 70 is arranged, and a wiring pattern is formed between the driving part 70 and the light emitting / receiving element array regions 50 and 60.
  • each light emitting element is the first light emitting element A
  • each light emitting element is the second light emitting element D are arranged in different regions.
  • the light receiving elements are the first light receiving elements B and the light receiving elements are the second light receiving elements C arranged in different regions.
  • the light receiving element array region 60 (first light receiving element B) is positioned at a position where the light emitting element array region 50 (A) of the first light emitting element A is rotated by 90 ° with respect to the center of the substrate 10. B) is disposed, and the light receiving element array region 60 (C) of the second light receiving element C is located at a position obtained by rotating the light receiving element array region 60 (B) of the first light receiving element B by 90 ° with respect to the center of the substrate 10. Is arranged, and the light emitting element array region 50 (D) of the second light emitting element D is disposed at a position obtained by rotating the light receiving element array region 60 (C) of the second light receiving element C by 90 ° with respect to the center of the substrate 10. Has been.
  • a light shielding film 80 is disposed on one surface side of the substrate 10.
  • a light shielding film (not shown) is disposed on the other surface side of the substrate 10. Yes.
  • a metal film such as titanium black can be used as the light shielding film 80 here.
  • the arrangement pattern of the light emitting / receiving element array region on the substrate 10-2 is obtained by rotating the direction of the arrangement pattern of the light emitting / receiving element array region on the substrate 10-1 by 90 °.
  • the arrangement pattern of the light emitting / receiving element array area of the substrate 10-3 is obtained by rotating the arrangement pattern of the light receiving element array area by 90 °.
  • the arrangement pattern of the light emitting / receiving element array region itself is common to all the substrates 10 (10-1, 10-2, 10-3), and the same process is repeated.
  • the light emitting / receiving element array region can be easily formed on all the substrates 10.
  • the light emitting element and the light receiving element between different substrates 10 can be positioned simply by rotating and arranging the direction of the arrangement pattern in the substrate having the common arrangement pattern by 90 ° around the center of the substrate 10, Bidirectional transmission and reception of optical signals can be performed between the substrates 10 facing each other.
  • the optical interconnection device 1 does not require cost and time for forming the individual substrates 10, and easily performs alignment between the substrates 10 that transmit and receive optical signals. Therefore, it is possible to easily realize optical interconnection with reduced crosstalk.
  • 1 optical interconnection device, 10: substrate, 10 pn: pn junction, 11: Light emitting element, 11a: Light emitting part, 11b: Light shielding part, 12: light receiving element, 12a: light receiving part, 12b: light shielding part, 13: Lens (microlens), 14a, 14b: power supply pads, 15a, 15b: power supply bumps, 20: element isolation layer, 20e: groove, 21: 1st electrode, 22: 2nd electrode, 21a, 22a: Lead-out wiring, 23: n + diffusion layer, 23a: channel diffusion layer, 23b: contact diffusion layer, 24: first interlayer insulating film, 25: second interlayer insulating film, 50: Light emitting element array area, 60: Light receiving element array area, 70: driving unit, 80: light shielding film, 100: substrate package, 100a: light transmission window, 100b: external wiring, 101: spacing member, 101a: legs, 101b: light transmission window, 102, 103: infrared transmission filter, 200: mounting substrate,

Abstract

The purpose of the present invention is to make an inter-circuit board optical interconnection that allows circuit boards for transmitting and receiving an optical signal to be easily positioned relative to each other without requiring time and cost for forming each of the circuit boards. In a plurality of circuit boards (10) of an optical interconnection device (1), a light emitting element (11) and a light receiving element (12) on each of the circuit boards (10) have a common arrangement pattern. In two circuit boards (10) for transmitting and receiving an optical signal, the direction of the arrangement pattern of one circuit board (10) rotates at a set angle with respect to the direction of the arrangement pattern of the other circuit board (10), and the light receiving element (12) on the other circuit board (10) is disposed on the optical axis of the light emitting element (11) provided on the one circuit board (10).

Description

光インターコネクション装置Optical interconnection device
　本発明は、基板間の光インターコネクションを実現することができる光インターコネクション装置に関するものである。 The present invention relates to an optical interconnection device capable of realizing optical interconnection between substrates.
　チップ間或いはボード間といった基板間の光インターコネクションは、積層された基板間の空間を利用した光伝送によって実現される。従来、このような光インターコネクションを実現するための装置は、光信号を他の基板に送信する発光素子と他の基板からの光信号を受信する受光素子を一つの基板が備えており、このような基板を複数積層して、一つの基板に設けられた発光素子に対して対向するように他の基板の受光素子を配置して光信号の空間的な伝送を行っている（例えば下記特許文献１参照）。 Optical interconnection between substrates such as between chips or boards is realized by optical transmission using the space between stacked substrates. Conventionally, an apparatus for realizing such an optical interconnection is provided with a light-emitting element that transmits an optical signal to another substrate and a light-receiving element that receives an optical signal from the other substrate. A plurality of such substrates are stacked, and light receiving elements on other substrates are arranged so as to face the light emitting elements provided on one substrate to perform spatial transmission of optical signals (for example, the following patents) Reference 1).
特開２０００－２７７７９４号公報JP 2000-277794 A
　基板間の光インターコネクションを実現する従来の装置は、光信号の送受信を行う２つの基板は、一つの基板の発光素子上に他の基板の受光素子を配置する必要があるので、それぞれの基板における発光素子と受光素子の配置パターンは個別のパターンを有しており、積層された基板間で光信号の送受信を行うには複数種類の基板を組み合わせることが必要であった。そのため、各基板における発光素子と受光素子の配列を個別にパターン設計する必要があった。また、光信号を送受信する２つの基板間では、一つの基板の発光素子の位置と他の基板の受光素子の位置を高い精度で位置合わせすることが必要になるが、異なる基板に配置されている発光素子と受光素子の位置を高い精度で位置合わせすることは製造上非常に困難であった。このような理由で、光インターコネクションを実現するには、個々の基板の形成に多大なコストと時間を要する問題があった。 In a conventional apparatus that realizes optical interconnection between substrates, two substrates that transmit and receive optical signals need to arrange a light receiving element of another substrate on a light emitting element of one substrate. The arrangement pattern of the light emitting element and the light receiving element in FIG. 1 has individual patterns, and it is necessary to combine a plurality of types of substrates in order to transmit and receive optical signals between the stacked substrates. For this reason, it is necessary to individually design the pattern of the light emitting elements and the light receiving elements on each substrate. Also, between two substrates that transmit and receive optical signals, it is necessary to align the position of the light emitting element on one substrate and the position of the light receiving element on the other substrate with high accuracy, but they are arranged on different substrates. It is very difficult to manufacture the light emitting element and the light receiving element that are positioned with high accuracy. For these reasons, in order to realize optical interconnection, there is a problem that it takes a great deal of cost and time to form individual substrates.
　本発明は、このような問題に対処することを課題の一例とするものである。すなわち、個々の基板の形成にコストと時間を要すること無く、光信号の送受信を行う基板相互の位置合わせを簡易に行うことができる、基板間の光インターコネクションを実現すること、等が本発明の目的である。 The present invention is an example of a problem to deal with such a problem. That is, it is possible to easily perform alignment between substrates that transmit and receive optical signals without cost and time for forming individual substrates, and to realize optical interconnection between substrates. Is the purpose.
　このような目的を達成するために、本発明による光インターコネクション装置は、明細書に記載された幾つかの発明のうち以下の構成を具備するものである。 In order to achieve such an object, an optical interconnection device according to the present invention has the following configuration among several inventions described in the specification.
　複数の基板を積層配置して基板間で光信号の送受信を行う光インターコネクション装置であって、複数の基板は、個々の基板における発光素子と受光素子の配置パターンが共通しており、光信号の送受信を行う２つの基板は、一つの基板の前記配置パターンの方向が他の基板の前記配置パターンの方向に対して設定角度回転しており、一つの基板に設けた発光素子の光軸上に他の基板の受光素子が配置されていることを特徴とする光インターコネクション装置。 An optical interconnection device that arranges and arranges a plurality of substrates to transmit and receive optical signals between the substrates, and the plurality of substrates have the same arrangement pattern of light emitting elements and light receiving elements on each substrate. In the two substrates that transmit and receive, the direction of the arrangement pattern of one substrate is rotated by a set angle with respect to the direction of the arrangement pattern of the other substrate, and on the optical axis of the light emitting element provided on one substrate An optical interconnection device in which a light receiving element of another substrate is arranged.
本発明の実施形態に係る光インターコネクション装置の基本構成を示した説明図である。It is explanatory drawing which showed the basic composition of the optical interconnection apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る光インターコネクション装置の基板に形成される発光素子，受光素子の形態例を示した説明図である。It is explanatory drawing which showed the example of the light emitting element formed in the board | substrate of the optical interconnection apparatus which concerns on embodiment of this invention, and a light receiving element. 本発明の実施形態に係る光インターコネクション装置の基板に形成される発光素子，受光素子の配置パターン例を示した説明図である。It is explanatory drawing which showed the example of arrangement pattern of the light emitting element formed in the board | substrate of the optical interconnection device which concerns on embodiment of this invention, and a light receiving element. 本発明の実施形態に係る光インターコネクション装置の基板に形成される発光素子，受光素子の配置パターンの他の例を示した説明図である。（ａ）は、基板の平面形状が矩形（正方形）の例であり、（ｂ）は、基板の平面形状が矩形（長方形）の例であり、（ｃ）は、ある形態の発光素子や受光素子の領域内に別の形態の発光素子や受光素子を形成した例である。It is explanatory drawing which showed the other example of the arrangement pattern of the light emitting element formed in the board | substrate of the optical interconnection device which concerns on embodiment of this invention, and a light receiving element. (A) is an example in which the planar shape of the substrate is rectangular (square), (b) is an example in which the planar shape of the substrate is rectangular (rectangular), and (c) is a light emitting element or a light receiving device of a certain form. This is an example in which a light emitting element or a light receiving element of another form is formed in the element region. 本発明の実施形態に係る光インターコネクション装置における基板の実装構造例を示した説明図である。（ａ）が単体の実装例であり、（ｂ）が多段に積層した状態の実装例である。It is explanatory drawing which showed the example of the mounting structure of the board | substrate in the optical interconnection device which concerns on embodiment of this invention. (A) is a mounting example of a single unit, and (b) is a mounting example in a state of being stacked in multiple stages. 本発明の実施形態に係る光インターコネクション装置における給電構造を示した説明図である。（ａ）がスルーホールを用いる構造、（ｂ）が個別にワイヤ接続する構造を示している。It is explanatory drawing which showed the electric power feeding structure in the optical interconnection apparatus which concerns on embodiment of this invention. (A) shows a structure using through holes, and (b) shows a structure in which wires are individually connected. 本発明の実施形態に係る光インターコネクション装置における発光素子又は受光素子の具体例を示した説明図である。（ａ）が第１の発光素子Ａ，第２の受光素子Ｃを示しており、（ｂ）が第１の受光素子Ｂ，第２の発光素子Ｄを示している。It is explanatory drawing which showed the specific example of the light emitting element or light receiving element in the optical interconnection apparatus which concerns on embodiment of this invention. (A) shows the first light-emitting element A and the second light-receiving element C, and (b) shows the first light-receiving element B and the second light-emitting element D. 本発明の実施形態に係る光インターコネクション装置の発光素子又は受光素子を形成する具体的な方法を示した説明図である。（ａ）～（ｄ）は各工程を示している。It is explanatory drawing which showed the specific method of forming the light emitting element or light receiving element of the optical interconnection apparatus which concerns on embodiment of this invention. (A) to (d) show the respective steps. 本発明の実施形態に係る光インターコネクション装置の具体的な構成例を示した説明図である。It is explanatory drawing which showed the specific structural example of the optical interconnection apparatus which concerns on embodiment of this invention.
　以下、図面を参照して本発明の実施形態を説明する。図１は本発明の実施形態に係る光インターコネクション装置の基本構成を示している。光インターコネクション装置１は、チップやボードなどの基板１０（１０ａ～１０ｄ）を複数積層配置して、基板１０間で光信号の送受信を行う装置である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a basic configuration of an optical interconnection apparatus according to an embodiment of the present invention. The optical interconnection device 1 is a device for transmitting and receiving optical signals between the substrates 10 by stacking a plurality of substrates 10 (10a to 10d) such as chips and boards.
　ここで、複数の基板１０（１０ａ～１０ｄ）は、個々の基板１０における発光素子１１と受光素子１２の配置パターンが共通（例えば一致）している。ここでいう配置パターンは、一つの基板１０上に配置された発光素子１１と受光素子１２の平面的な位置関係の態様を示している。ここでは、発光素子１１，受光素子１２の数は単数であっても複数であってもよいが、発光素子１１と受光素子１２は対で存在するものとする。 Here, in the plurality of substrates 10 (10a to 10d), the arrangement patterns of the light emitting elements 11 and the light receiving elements 12 on the individual substrates 10 are common (for example, coincident). The arrangement pattern referred to here indicates an aspect of a planar positional relationship between the light emitting element 11 and the light receiving element 12 arranged on one substrate 10. Here, although the number of the light emitting elements 11 and the light receiving elements 12 may be singular or plural, it is assumed that the light emitting elements 11 and the light receiving elements 12 exist in pairs.
　そして、光信号の送受信を行う２つの基板１０（例えば、基板１０ａと基板１０ｂ）は、一つの基板１０ａの配置パターンの方向Ｓａが他の基板１０ｂの配置パターンの方向Ｓｂに対して設定角度θ回転しており、一つの基板１０ａに設けた発光素子１１の光軸上に他の基板１０ｂの受光素子１２が配置されている。ここでは、複数の基板１０ａ～１０ｄは、その一面が平行になるように積層されており、前述した「回転」は、基板１０の一面に垂直な軸周りの回転である。 Then, two substrates 10 (for example, the substrate 10a and the substrate 10b) that transmit and receive optical signals have a set angle θ that is the direction Sa of the arrangement pattern of one substrate 10a with respect to the direction Sb of the arrangement pattern of the other substrate 10b. The light receiving element 12 of another substrate 10b is arranged on the optical axis of the light emitting element 11 provided on one substrate 10a. Here, the plurality of substrates 10 a to 10 d are stacked so that one surface thereof is parallel to each other, and the above-described “rotation” is rotation around an axis perpendicular to one surface of the substrate 10.
　図示の例では、基板１０ａと基板１０ｂの間だけでなく、基板１０ｂと基板１０ｃ間、基板１０ｃと基板１０ｄ間でも光信号の送受信を行っており、基板１０ｂの配置パターンの方向Ｓｂが基板１０ｃの配置パターンのＳｃの方向に対して設定角度θ回転しており、基板１０ｃの配置パターンの方向Ｓｃが基板１０ｄの配置パターンのＳｄの方向に対して設定角度θ回転している。ここでの「回転」は、各基板１０の一面に垂直な軸周りの同軸回転である。 In the illustrated example, optical signals are transmitted and received not only between the substrate 10a and the substrate 10b, but also between the substrate 10b and the substrate 10c, and between the substrate 10c and the substrate 10d, and the arrangement pattern direction Sb of the substrate 10b is the substrate 10c. Is rotated by a set angle θ with respect to the direction of Sc of the arrangement pattern, and the direction Sc of the arrangement pattern of the substrate 10c is rotated by the set angle θ with respect to the direction of Sd of the arrangement pattern of the substrate 10d. Here, the “rotation” is a coaxial rotation around an axis perpendicular to one surface of each substrate 10.
　このような光インターコネクション装置１は、各基板１０において発光素子１１と受光素子１２の配置パターンが共通しているので、同工程の繰り返しで発光素子１１と受光素子１２が配置された基板１０を複数個形成することができる。これによって、発光素子１１と受光素子１２が配置された複数の基板１０を低コスト且つ短時間に形成することが可能になる。また、複数の基板１０間での発光素子１１と受光素子１２の位置関係を精度良く合わせることが可能になるので、クロストークを抑えた基板間の光インターコネクションを実現することができる。また、複数の基板１０を積層配置する際には、各基板１０を設定角度回転させる一方向の調整で済むので、装置組み立て時の調整作業を簡略化することができる。 In such an optical interconnection device 1, since the arrangement pattern of the light emitting element 11 and the light receiving element 12 is common in each substrate 10, the substrate 10 on which the light emitting element 11 and the light receiving element 12 are arranged by repeating the same process. A plurality can be formed. As a result, the plurality of substrates 10 on which the light emitting element 11 and the light receiving element 12 are arranged can be formed at low cost and in a short time. In addition, since the positional relationship between the light emitting element 11 and the light receiving element 12 among the plurality of substrates 10 can be accurately matched, it is possible to realize optical interconnection between the substrates with reduced crosstalk. Further, when the plurality of substrates 10 are arranged in a stacked manner, adjustment in one direction by rotating each substrate 10 by a set angle is sufficient, so that the adjustment work at the time of assembling the apparatus can be simplified.
　ここで、個々の基板１０においては、発光素子１１と受光素子１２の配置パターンは、発光素子１１の位置を基板１０上の一点Ｏｓに対して設定角度θ回転した位置が受光素子１２の位置になっている。個々の基板１０の平面形状はどのような形状であっても良い。複数の基板１０の平面形状が同一であり、その平面形状が一点Ｏｓを中心とした設定角度θの回転に対して不変である場合には、各基板１０を同一形状の枠体で支持することができるので基板１０の支持や位置合わせが容易になる。特に、基板１０の平面形状を一点Ｏｓ中心のｎ多角形（ｎは３以上の整数）にして、前述した設定角度θを３６０°／ｎに設定することで、複数の基板１０を同一多角形の枠体で支持しながら、簡易に各基板１０の配置パターン方向を位置決めすることが可能になる。 Here, in each substrate 10, the arrangement pattern of the light emitting elements 11 and the light receiving elements 12 is such that the position of the light emitting elements 11 rotated by a set angle θ with respect to one point Os on the substrate 10 is the position of the light receiving elements 12. It has become. The planar shape of each substrate 10 may be any shape. When the planar shapes of the plurality of substrates 10 are the same and the planar shapes are invariable with respect to the rotation of the set angle θ about the single point Os, each substrate 10 is supported by a frame having the same shape. Therefore, it becomes easy to support and align the substrate 10. In particular, by setting the planar shape of the substrate 10 to an n-polygon centered at one point Os (n is an integer of 3 or more) and setting the set angle θ described above to 360 ° / n, a plurality of substrates 10 can be made identical. It is possible to easily position the arrangement pattern direction of each substrate 10 while being supported by the rectangular frame.
　図２は、基板１０に形成される発光素子，受光素子の形態例を示している。図に示すように、基板１０に配置する発光素子１１と受光素子１２は以下の４形態にすることができる。第１の発光素子Ａは、基板１０の一面側から空間に光を出射する形態である。第１の受光素子Ｂは、基板１０の他面側から基板１０内に入射した光を基板１０の一面側で受光する形態である。第２の発光素子Ｄは、基板１０の一面側から基板１０内に出射した光を基板１０の他面側から空間に出射する形態である。第２の受光素子Ｃは、基板１０の他面側から基板１０内に入射した光を基板１０の一面側で受光する形態である。 FIG. 2 shows a form example of the light emitting element and the light receiving element formed on the substrate 10. As shown in the figure, the light emitting element 11 and the light receiving element 12 arranged on the substrate 10 can be in the following four forms. The 1st light emitting element A is a form which radiate | emits light from the one surface side of the board | substrate 10 to space. The first light receiving element B is configured to receive light incident on the substrate 10 from the other surface side of the substrate 10 on one surface side of the substrate 10. The second light emitting element D has a form in which light emitted from the one surface side of the substrate 10 into the substrate 10 is emitted into the space from the other surface side of the substrate 10. The second light receiving element C is configured to receive light incident on the substrate 10 from the other surface side of the substrate 10 on one surface side of the substrate 10.
　図示の例では、発光素子１１は発光部１１ａと遮光部１１ｂを備えており、受光素子１２は受光部１２ａと遮光部１２ｂを備えている。第１の発光素子Ａは、基板１０の一面側に発光部１１ａを備え、発光部１１ａの背面側に遮光部１１ｂを備えている。第１の受光素子Ｂは、基板１０の一面側に受光部１２ａを備え、基板１０の一面側の表面に遮光部１２ｂを備えている。第２の発光素子Ｄは、基板１０の一面側に発光部１１ａを備え、基板１０の一面側の表面に遮光部１１ｂを備えている。第２の受光素子Ｃは、基板１０の一面側に受光部１２ａを備え、受光部１２ａの背面側に遮光部１２ｂを備えている。このような遮光部１１ｂ，１２ｂを設けることで、ノイズとなる光の発光や受光を抑止することができる。 In the illustrated example, the light emitting element 11 includes a light emitting portion 11a and a light shielding portion 11b, and the light receiving element 12 includes a light receiving portion 12a and a light shielding portion 12b. The first light emitting element A includes a light emitting portion 11a on one surface side of the substrate 10 and a light shielding portion 11b on the back surface side of the light emitting portion 11a. The first light receiving element B includes a light receiving portion 12 a on one surface side of the substrate 10 and a light shielding portion 12 b on the surface on the one surface side of the substrate 10. The second light emitting element D includes a light emitting unit 11 a on one surface side of the substrate 10 and a light shielding unit 11 b on the surface of one surface side of the substrate 10. The second light receiving element C includes a light receiving portion 12a on one side of the substrate 10 and a light blocking portion 12b on the back side of the light receiving portion 12a. By providing such light shielding portions 11b and 12b, it is possible to suppress light emission or light reception that becomes noise.
　このような発光素子１１と受光素子１２の形態では、光信号の送受信を行う２つの基板間では第１の発光素子Ａと第１の受光素子Ｂが対になり、第２の発光素子Ｄと第２の受光素子Ｃが対になる。このように、発光素子１１と受光素子１２の全ての形態を基板１０の一面側に形成することができれば、基板１０に対して発光素子１１と受光素子１２を配置する工程を簡略化することが可能になる。この際、基板１０の他面側には個々の発光素子１１，受光素子１２に対応してレンズ（マイクロレンズ）１３を設けることができる。なお、このような形態の発光素子１１と受光素子１２を得るには基板１０は光透過性であることが必要になる。基板１０を透過させる光を赤外光とし、基板１０として赤外光を透過可能な半導体基板（Ｓｉなど）を用いることで、このような発光素子１１と受光素子１２を形成することができる。 In such a form of the light emitting element 11 and the light receiving element 12, the first light emitting element A and the first light receiving element B are paired between two substrates that transmit and receive optical signals, and the second light emitting element D and The second light receiving element C is paired. Thus, if all the forms of the light emitting element 11 and the light receiving element 12 can be formed on one surface side of the substrate 10, the process of arranging the light emitting element 11 and the light receiving element 12 with respect to the substrate 10 can be simplified. It becomes possible. At this time, lenses (microlenses) 13 corresponding to the individual light emitting elements 11 and light receiving elements 12 can be provided on the other surface side of the substrate 10. In order to obtain the light emitting element 11 and the light receiving element 12 having such a configuration, the substrate 10 needs to be light transmissive. Such light emitting element 11 and light receiving element 12 can be formed by using infrared light as the light transmitted through the substrate 10 and using a semiconductor substrate (such as Si) that can transmit infrared light as the substrate 10.
　図３は、基板１０に形成される発光素子１１と受光素子１２の配置パターン例を示している。図示の例では、前述した第１の発光素子Ａ，第１の受光素子Ｂ，第２の受光素子Ｃ，第２の発光素子Ｄの４形態を基板１０に配置している。この配置パターンは、第１の発光素子Ａの位置を基板１０上の一点Ｏｓに対して設定角度θ回転した位置が第１の受光素子Ｂの位置になり、第２の受光素子Ｃの位置を基板１０上の一点Ｏｓに対して設定角度θ回転した位置が第２の発光素子Ｄの位置になる。 FIG. 3 shows an arrangement pattern example of the light emitting elements 11 and the light receiving elements 12 formed on the substrate 10. In the illustrated example, the four forms of the first light emitting element A, the first light receiving element B, the second light receiving element C, and the second light emitting element D described above are arranged on the substrate 10. In this arrangement pattern, a position obtained by rotating the position of the first light emitting element A with respect to one point Os on the substrate 10 by a set angle θ becomes the position of the first light receiving element B, and the position of the second light receiving element C is determined. A position rotated by a set angle θ with respect to one point Os on the substrate 10 is a position of the second light emitting element D.
　光インターコネクション装置１を得るには、基板１０を一点Ｏｓが同軸上になるように２つ積層して、一つの基板１０の配置パターンの方向Ｓが他の基板１０の配置パターンの方向Ｓ’に対して設定角度θ回転しているように位置決めする。これによって、一つの基板１０における第１の発光素子Ａの位置と他の基板１０における第１の受光素子Ｂの位置が平面的に重なり、第２の受光素子Ｃと第２の発光素子Ｄの位置が平面的に重なることになり、第１の発光素子Ａと第１の受光素子Ｂとの間で光信号の送受信が可能になり、第２の受光素子Ｃと第２の発光素子Ｄとの間で光信号の送受信が可能になる。このように一つの基板１０に第１の発光素子Ａ，第１の受光素子Ｂ，第２の受光素子Ｃ，第２の発光素子Ｄの４形態の発光素子１１と受光素子１２を配置することで、２つの基板１０間で光信号の双方向送受信が可能になる。 In order to obtain the optical interconnection device 1, two substrates 10 are stacked so that one point Os is coaxial, and the arrangement pattern direction S of one substrate 10 is the arrangement pattern direction S ′ of the other substrate 10. Is positioned so as to be rotated by a set angle θ. Thereby, the position of the first light emitting element A on one substrate 10 and the position of the first light receiving element B on the other substrate 10 overlap in a plane, and the second light receiving element C and the second light emitting element D The positions are overlapped in a plane, so that an optical signal can be transmitted and received between the first light emitting element A and the first light receiving element B, and the second light receiving element C and the second light emitting element D Optical signals can be transmitted and received between the two. In this way, the four types of light emitting elements 11 and light receiving elements 12 of the first light emitting element A, the first light receiving element B, the second light receiving element C, and the second light emitting element D are arranged on one substrate 10. Thus, bidirectional transmission / reception of optical signals between the two substrates 10 becomes possible.
　図４は、基板１０に形成される発光素子１１と受光素子１２の配置パターンの他の例を示している。（ａ）に示す例は、基板１０の平面形状が矩形（正方形）であり、基板１０上の一点Ｏｓから等距離の位置であって９０°の角度毎に離れた位置に、第１の発光素子Ａ，第１の受光素子Ｂ，第２の受光素子Ｃ，第２の発光素子Ｄがそれぞれ配置されている。この例では、光信号の送受信を行う２つの基板１０を一点Ｏｓが重なるように積層配置して、一つの基板１０の配置パターンの方向が他の基板１０の配置パターンの方向に対して９０°回転しているように位置決めすることで、一つの基板１０における第１の発光素子Ａと他の基板１０における第１の受光素子Ｂの間で光信号の送受信が可能になり、一つの基板における第２の受光素子Ｃと他の基板における第２の発光素子Ｄの間で光信号の送受信が可能になる。 FIG. 4 shows another example of the arrangement pattern of the light emitting elements 11 and the light receiving elements 12 formed on the substrate 10. In the example shown in (a), the planar shape of the substrate 10 is a rectangle (square), and the first light emission is performed at a position that is equidistant from the point Os on the substrate 10 and at an angle of 90 °. An element A, a first light receiving element B, a second light receiving element C, and a second light emitting element D are arranged. In this example, two substrates 10 that transmit and receive optical signals are stacked so that one point Os overlaps, and the direction of the arrangement pattern of one substrate 10 is 90 ° with respect to the direction of the arrangement pattern of another substrate 10. By positioning so as to rotate, an optical signal can be transmitted and received between the first light-emitting element A on one substrate 10 and the first light-receiving element B on another substrate 10. Optical signals can be transmitted and received between the second light receiving element C and the second light emitting element D on another substrate.
　（ａ）においては、複数基板１０を積層配置する際に各基板１０間の電気的な接続を行う電極構造が示されている。図示の例では、基板１０の一面側には電源パッド１４ａ，１４ｂが配置され、基板１０の他面側には電源バンプ１５ａ，１５ｂが配置されている。それぞれの基板１０における配置パターン方向が９０°回転するように２つの基板１０を回転させて積層配置すると、一つの基板１０における電源パッド１４ａと他の基板１０における電源バンプ１５ａが接続され、一つの基板１０における電源パッド１４ｂと他の基板における電源バンプ１５ｂが接続されて、それぞれの接続が＋電源と－電源に接続される。ここで、電源パッド１４ａ，１４ｂは基板１０の一面側に設置される発光素子１１，受光素子１２と基板１０の一面上に形成された配線パターンを経由して接続されており、電源バンプ１５ａ，１５ｂはスルーホールなど基板１０を貫通する配線を経由して、基板１０の一面側に設置されている発光素子１１，受光素子１２と接続されている。なお、（＋の）電源パッド１４ａと（＋の）電源バンプ１５ａの位置関係は、第１の発光素子Ａと第１の受光素子Ｂの位置関係と同じであり、（－の）電源パッド１４ｂと（－の）電源バンプ１５ｂの位置関係は第２の受光素子Ｃと第２の発光素子Ｄの位置関係と同じであれば、接続関係が成立する（ここでの＋と－は逆でも可）。 (A) shows an electrode structure that performs electrical connection between the substrates 10 when the plurality of substrates 10 are stacked. In the illustrated example, power supply pads 14 a and 14 b are arranged on one surface side of the substrate 10, and power supply bumps 15 a and 15 b are arranged on the other surface side of the substrate 10. When the two substrates 10 are rotated and arranged so that the arrangement pattern direction on each substrate 10 is rotated by 90 °, the power supply pads 14a on one substrate 10 and the power supply bumps 15a on the other substrate 10 are connected to each other. The power supply pad 14b in the substrate 10 and the power supply bump 15b in the other substrate are connected, and the respective connections are connected to the + power supply and the −power supply. Here, the power supply pads 14a and 14b are connected to the light emitting element 11 and the light receiving element 12 installed on one surface side of the substrate 10 via a wiring pattern formed on one surface of the substrate 10, and the power supply bumps 15a and 14b are connected. Reference numeral 15b is connected to the light emitting element 11 and the light receiving element 12 installed on one surface side of the substrate 10 via a wiring penetrating the substrate 10 such as a through hole. The positional relationship between the (+) power supply pad 14a and the (+) power supply bump 15a is the same as the positional relationship between the first light emitting element A and the first light receiving element B, and the (−) power supply pad 14b. If the positional relationship between the (-) power supply bump 15b is the same as the positional relationship between the second light receiving element C and the second light emitting element D, the connection relationship is established (the + and-here may be reversed) ).
　（ｂ）に示す例は、基板１０の平面形状が矩形（長方形）であり、基板１０上の一点Ｏｓから等距離の位置であって１８０°の角度毎に離れた位置に、第１の発光素子Ａと第１の受光素子Ｂの対、第２の受光素子Ｃと第２の発光素子Ｄの対がそれぞれ複数対配置されている。一つの対では一点Ｏｓから発光素子１１までの距離と一点Ｏｓから受光素子１２までの距離は等しい距離になっているが、異なる対では、一点Ｏｓから発光素子１１，受光素子１２までの距離を様々に設定することができる。 In the example shown in (b), the planar shape of the substrate 10 is rectangular (rectangular), and the first light emission is performed at a position that is equidistant from the point Os on the substrate 10 and separated by an angle of 180 °. A plurality of pairs of the element A and the first light receiving element B and a plurality of pairs of the second light receiving element C and the second light emitting element D are arranged. In one pair, the distance from one point Os to the light emitting element 11 is equal to the distance from one point Os to the light receiving element 12, but in a different pair, the distance from one point Os to the light emitting element 11 and the light receiving element 12 is set. Various settings can be made.
　この例では、光信号の送受信を行う２つの基板１０を一点Ｏｓが重なるように積層配置して、一つの基板１０の配置パターンの方向が他の基板１０の配置パターンの方向に対して１８０°回転しているように位置決めすることで、一つの基板１０における第１の発光素子Ａと他の基板１０における第１の受光素子Ｂの間で光信号の送受信が可能になり、一つの基板１０における第２の受光素子Ｃと他の基板１０における第２の発光素子Ｄの間で光信号の送受信が可能になる。 In this example, two substrates 10 that transmit and receive optical signals are stacked so that one point Os overlaps, and the direction of the arrangement pattern of one substrate 10 is 180 ° with respect to the direction of the arrangement pattern of the other substrate 10. By positioning so as to rotate, an optical signal can be transmitted and received between the first light-emitting element A on one substrate 10 and the first light-receiving element B on another substrate 10. Optical signals can be transmitted / received between the second light receiving element C in FIG. 2 and the second light emitting element D in the other substrate 10.
　（ｃ）の例は、基本的には（ａ）の例と同様に、一つの基板１０の配置パターンの方向が他の基板１０の配置パターンの方向に対して９０°回転しているように位置決めすることで、一つの基板１０における第１の発光素子Ａと他の基板１０における第１の受光素子Ｂの間で光信号の送受信が可能になり、一つの基板における第２の受光素子Ｃと他の基板における第２の発光素子Ｄの間で光信号の送受信が可能になる。この例では、第１発光素子Ａの領域内に第１の受光素子Ｂが配置され、第２の発光素子Ｄの領域内に第１の発光素子Ａが配置され、第２の受光素子Ｃの領域内に第２の発光素子Ｄが配置され、第１の受光素子Ｂの領域内に第２の受光素子Ｃが配置されている。このようにある形態の発光素子１１や受光素子１２の領域内に別の形態の発光素子１１や受光素子１２を形成したものであってもよい。 In the example of (c), basically, as in the example of (a), the direction of the arrangement pattern of one substrate 10 is rotated by 90 ° with respect to the direction of the arrangement pattern of the other substrate 10. By positioning, an optical signal can be transmitted and received between the first light-emitting element A on one substrate 10 and the first light-receiving element B on the other substrate 10, and the second light-receiving element C on one substrate. And a second light emitting element D on another substrate can transmit and receive optical signals. In this example, the first light receiving element B is arranged in the region of the first light emitting element A, the first light emitting element A is arranged in the region of the second light emitting element D, and the second light receiving element C The second light emitting element D is arranged in the region, and the second light receiving element C is arranged in the region of the first light receiving element B. Thus, the light emitting element 11 or the light receiving element 12 of another form may be formed in the region of the light emitting element 11 or the light receiving element 12 of a certain form.
　図５は、基板１０の実装構造例を示した説明図である。（ａ）が単体の実装例であり、（ｂ）が多段に積層した状態の実装例である。基板１０はスペーサなどを介在させて所定間隔で直接積層配置することができるが、（ａ）に示す基板パッケージ１００と間隔保持部材１０１を用いて基板１０を積層配置することができる。基板パッケージ１００は、光信号（赤外線など）を透過させる光透過窓部１００ａと基板１０の発光素子１１，受光素子１２を駆動する給電を行うための外部配線１００ｂを備えている。間隔保持部材１０１は間隔保持のための脚部１０１ａと光信号（赤外線など）を透過させる光透過窓部１０１ｂを備えている。基板１０は、基板パッケージ１００の光透過窓部１００ａ上に支持され、基板１０の一面側に設けられる配線パターンと外部配線１００ｂが接続される。 FIG. 5 is an explanatory view showing a mounting structure example of the substrate 10. (A) is a mounting example of a single unit, and (b) is a mounting example in a state of being stacked in multiple stages. The substrate 10 can be directly stacked and disposed at a predetermined interval with a spacer or the like interposed therebetween. However, the substrate 10 can be stacked and disposed using the substrate package 100 and the spacing member 101 shown in FIG. The substrate package 100 includes a light transmission window 100a that transmits an optical signal (such as infrared rays) and an external wiring 100b that supplies power to drive the light emitting element 11 and the light receiving element 12 of the substrate 10. The interval holding member 101 includes a leg portion 101a for holding the interval and a light transmission window portion 101b that transmits an optical signal (such as infrared rays). The substrate 10 is supported on the light transmission window portion 100a of the substrate package 100, and a wiring pattern provided on one surface side of the substrate 10 and the external wiring 100b are connected.
　そして、基板１０を積層配置するには、一つの基板パッケージ１００上に間隔保持部材１０１を載せ、この間隔保持部材１０１上に他の基板パッケージ１００を載せる。これを繰り返すことで設定間隔を空けて基板１０を多層に積層配置することができる。また、最下層の基板パッケージ１００の光透過窓部１００ａを覆うようにフィルム状の赤外線透過フィルタ１０２を取り付け、最上層の間隔保持部材１０１の光透過窓部１０１ｂを覆うようにフィルム状の赤外線透過フィルタ１０３を取り付けることで、迷光の入射で発生するノイズを防ぐことができる。このような基板パッケージ１００を用いると、基板１０のハンドリングが容易になる、配線の引き回しの自由度が増える、基板１０に設けるスルーホールが不要となるなどの有利な点が得られる。 In order to stack and arrange the substrates 10, the interval holding member 101 is placed on one substrate package 100, and another substrate package 100 is placed on the interval holding member 101. By repeating this, the substrate 10 can be arranged in multiple layers with a set interval. Further, a film-like infrared transmission filter 102 is attached so as to cover the light transmission window 100a of the lowermost substrate package 100, and a film-like infrared transmission is provided so as to cover the light transmission window 101b of the uppermost spacing member 101. By attaching the filter 103, noise generated by the incidence of stray light can be prevented. Use of such a substrate package 100 provides advantages such as easy handling of the substrate 10, an increased degree of freedom in wiring, and the elimination of through holes provided in the substrate 10.
　図６は、各基板又は基板パッケージへの給電構造を示した説明図である。（ａ）に示した例は、実装基板２００上に基板１０（又は基板パッケージ１００）を積層して、バンプ２１０とスルーホール２２０を経由して、各基板１０（又は基板パッケージ１００）相互間の接続を行い、最上層の基板１０（又は基板パッケージ１００）上の電極と実装基板２００上の電極とをワイヤ２０１で接続したものである。この例では、最上層（又は最下層）の基板１０（又は基板パッケージ１００）から中間の基板１０（又は基板パッケージ１００）を経由して最下層（又は最上層）の基板１０（又は基板パッケージ１００）に電気供給がなされる。（ｂ）に示した例は、実装基板２００と各基板１０（又は基板パッケージ１００）を個別にワイヤ２０１で接続している。各基板（又は基板パッケージ１００）においては前述した設定角度θが９０°であり、各基板１０は発光素子１１と受光素子１２の配置パターン方向がそれぞれ９０°回転した状態になっている。 FIG. 6 is an explanatory view showing a power feeding structure to each board or board package. In the example shown in (a), the substrate 10 (or the substrate package 100) is stacked on the mounting substrate 200, and each substrate 10 (or the substrate package 100) is mutually connected via the bump 210 and the through hole 220. In this connection, the electrodes on the uppermost substrate 10 (or the substrate package 100) and the electrodes on the mounting substrate 200 are connected by wires 201. In this example, the substrate 10 (or the substrate package 100) of the lowermost layer (or the uppermost layer) from the substrate 10 (or the substrate package 100) of the uppermost layer (or the lowermost layer) via the intermediate substrate 10 (or the substrate package 100). ) Is supplied with electricity. In the example shown in (b), the mounting substrate 200 and each substrate 10 (or substrate package 100) are individually connected by wires 201. In each substrate (or substrate package 100), the aforementioned setting angle θ is 90 °, and each substrate 10 is in a state in which the arrangement pattern direction of the light emitting element 11 and the light receiving element 12 is rotated by 90 °.
　図７は、本発明の実施形態に係る光インターコネクション装置における発光素子又は受光素子の具体例を示した説明図である。（ａ）が第１の発光素子Ａ，第２の受光素子Ｃを示しており、（ｂ）が第１の受光素子Ｂ，第２の発光素子Ｄを示している。 FIG. 7 is an explanatory view showing a specific example of a light emitting element or a light receiving element in the optical interconnection device according to the embodiment of the present invention. (A) shows the first light-emitting element A and the second light-receiving element C, and (b) shows the first light-receiving element B and the second light-emitting element D.
　発光素子１１又は受光素子１２は、基板（半導体基板）１０にｐｎ接合部１０ｐｎを囲む絶縁性の素子分離層２０を備え、基板１０の一面側において、素子分離層２０の内側にｐ層電極とｎ層電極の一方になる第１電極２１を配置すると共に、素子分離層２０の外側にｐ層電極とｎ層電極の他方になる第２電極２２を配置している。 The light emitting element 11 or the light receiving element 12 includes an insulating element isolation layer 20 surrounding the pn junction 10pn on a substrate (semiconductor substrate) 10, and a p-layer electrode and an inner side of the element isolation layer 20 on one side of the substrate 10. A first electrode 21 that is one of the n-layer electrodes is disposed, and a second electrode 22 that is the other of the p-layer electrode and the n-layer electrode is disposed outside the element isolation layer 20.
　（ａ）に示した第１の発光素子Ａ，第２の受光素子Ｃにおいては、第１電極２１は光透過性のｐ層電極２１ｐであり、第２電極２２は金属製のｎ層電極２２ｎであって、素子分離層２０の外周部に第２電極２２に接続されるｎ＋拡散層２３を備えている。第１電極２１と第２電極２２にはそれぞれ引き出し配線２１ａ，２２ａが接続されており、この引き出し配線２１ａ，２２ａを含めて第１電極２１と第２電極２２間の電気的な絶縁を確保するために、第１層間絶縁膜２４と第２層間絶縁膜２５が積層配置されている。このような構成を備える発光素子１１又は受光素子１２は、第１電極２１上に発光部又は受光部が形成され、発光部又は受光部における基板１０の他面側に遮光層３０が形成されている。これによって、光透過性の第１電極２１を経由した発光又は受光が可能になる。 In the first light-emitting element A and the second light-receiving element C shown in (a), the first electrode 21 is a light-transmitting p-layer electrode 21p, and the second electrode 22 is a metal n-layer electrode 22n. In addition, an n + diffusion layer 23 connected to the second electrode 22 is provided on the outer peripheral portion of the element isolation layer 20. Lead wires 21 a and 22 a are connected to the first electrode 21 and the second electrode 22, respectively, and electrical insulation between the first electrode 21 and the second electrode 22 is ensured including the lead wires 21 a and 22 a. For this purpose, the first interlayer insulating film 24 and the second interlayer insulating film 25 are stacked. In the light emitting element 11 or the light receiving element 12 having such a configuration, a light emitting part or a light receiving part is formed on the first electrode 21, and a light shielding layer 30 is formed on the other surface side of the substrate 10 in the light emitting part or the light receiving part. Yes. As a result, light emission or light reception via the light transmissive first electrode 21 becomes possible.
　（ｂ）に示した第１の受光素子Ｂ，第２の発光素子Ｄにおいては、第１電極２１が光反射性の金属電極になり、基板１０の他面側が光透過部１０Ｓになる。これによって、基板１０における光透過部１０Ｓを経由した発光又は受光が可能になる。ここで、（ａ），（ｂ）のいずれにおいても、第１電極２１から第２電極２２に向かう電流の流れは、ｐｎ接合部１０ｐｎを囲む素子分離層２０の外周部に形成されるｎ＋拡散層２３に沿った流路が形成されるので、発光部又は受光部内で比較的均一な発光又は受光特性を得ることができる。 In the first light-receiving element B and the second light-emitting element D shown in (b), the first electrode 21 is a light-reflective metal electrode, and the other surface side of the substrate 10 is a light transmission part 10S. Thereby, light emission or light reception via the light transmission part 10S in the substrate 10 becomes possible. Here, in both (a) and (b), the current flow from the first electrode 21 to the second electrode 22 is n + diffusion formed in the outer peripheral portion of the element isolation layer 20 surrounding the pn junction 10pn. Since the flow path along the layer 23 is formed, relatively uniform light emission or light reception characteristics can be obtained in the light emitting unit or the light receiving unit.
　図８は、本発明の実施形態に係る光インターコネクション装置の発光素子又は受光素子を形成する具体的な方法を示した説明図である。ここでは、図７（ａ）に示した発光・受光素子を例に説明する。 FIG. 8 is an explanatory view showing a specific method of forming a light emitting element or a light receiving element of the optical interconnection device according to the embodiment of the present invention. Here, the light emitting / receiving element shown in FIG. 7A will be described as an example.
　先ず、（ａ）に示すように、基板（Ｓｉ半導体基板）１０を加工して素子分離層２０を形成するための溝部２０ｅを形成する。この溝部２０ｅは例えば異方性エッチングなどによって形成することができ、発光部又は受光部を囲むように形成される。溝部２０ｅの形成後には、ｎ＋拡散層２３をｎ型不純物のイオン注入などによって形成する。ｎ＋拡散層２３は、溝部２０ｅの底部及び外側にチャネル拡散層２３ａを形成し、更に半導体基板１０の表面に第２電極２２との接続を取るためのコンタクト拡散層２３ｂを形成する。 First, as shown in (a), the substrate (Si semiconductor substrate) 10 is processed to form a groove 20e for forming the element isolation layer 20. The groove 20e can be formed by anisotropic etching or the like, for example, and is formed so as to surround the light emitting part or the light receiving part. After the formation of the groove 20e, the n + diffusion layer 23 is formed by ion implantation of n-type impurities. In the n + diffusion layer 23, a channel diffusion layer 23 a is formed on the bottom and outside of the groove 20 e, and a contact diffusion layer 23 b for connecting to the second electrode 22 is formed on the surface of the semiconductor substrate 10.
　次に、（ｂ）に示すように、溝部２０ｅに酸化膜などの絶縁膜を埋め込んで素子分離層２０を形成する。そして、（ｃ）に示すように、第１層間絶縁膜２４を形成し、ｎ＋拡散層２３へのコンタクト開口を形成した後、第２電極２２のパターンを形成する。その後、第２層間絶縁膜２５を形成して、発光部又は受光部となる素子分離層２０の内側を開口し、１３族元素、例えば、Ｂ（ボロン），Ａｌ（アルミニウム），Ｇａ（ガリウム）から選択される不純物を注入して素子分離層２０の内側にｐｎ接合部１０ｐｎを形成する。 Next, as shown in (b), an isolation layer 20 is formed by embedding an insulating film such as an oxide film in the groove 20e. Then, as shown in (c), a first interlayer insulating film 24 is formed, a contact opening to the n + diffusion layer 23 is formed, and then a pattern of the second electrode 22 is formed. Thereafter, a second interlayer insulating film 25 is formed, and the inside of the element isolation layer 20 that becomes a light emitting portion or a light receiving portion is opened, and a group 13 element, for example, B (boron), Al (aluminum), Ga (gallium) An pn junction 10 pn is formed inside the element isolation layer 20 by implanting an impurity selected from the following.
　その後、基板１０上にＩＴＯなどの透明導電膜を成膜してパターニングすることで第１電極２１を形成し、更にその他の回路構成を形成する。そして、第１電極２１と第２電極２２間に順方向電圧Ｖａを印加してｐｎ接合部１０ｐｎに電流を流し、その電流によるジュール熱でのアニール処理で半導体基板１０に注入した１３族元素、例えば、Ｂ（ボロン），Ａｌ（アルミニウム），Ｇａ（ガリウム）から選択される不純物を拡散させる過程で、透明導電膜である第１電極２１側からｐｎ接合部１０ｐｎに特定波長λの光を照射し、このようなアニール過程での光照射によってｐｎ接合部１０ｐｎ近傍にドレスト光子を発生させる。このようにドレスト光子が発生したｐｎ接合部１０ｐｎは、ｐｎ接合部１０ｐｎに順方向電圧を印加すると、アニール処理過程で照射した光の波長λと同等の波長の光を放出する。また、ｐｎ接合部１０ｐｎは波長λの光にピーク感度を有する受光部として機能する。 Thereafter, a transparent conductive film such as ITO is formed on the substrate 10 and patterned to form the first electrode 21, and another circuit configuration is formed. Then, a forward voltage Va is applied between the first electrode 21 and the second electrode 22 to cause a current to flow through the pn junction 10pn, and a group 13 element implanted into the semiconductor substrate 10 by an annealing process with Joule heat due to the current, For example, in the process of diffusing an impurity selected from B (boron), Al (aluminum), and Ga (gallium), the pn junction 10pn is irradiated with light having a specific wavelength λ from the first electrode 21 side which is a transparent conductive film. Then, dressed photons are generated in the vicinity of the pn junction 10 pn by light irradiation in such an annealing process. When the forward voltage is applied to the pn junction 10pn, the pn junction 10pn in which the dressed photon is generated in this way emits light having a wavelength equivalent to the wavelength λ of the light irradiated in the annealing process. Further, the pn junction portion 10pn functions as a light receiving portion having peak sensitivity with respect to light having a wavelength λ.
　図７（ｂ）に示した受光・発光素子を形成するには、基板１０上に金属電極膜を成膜してパターニングすることで第１電極２１を形成し、第１電極２１と第２電極２２間に順方向電圧Ｖａを印加してｐｎ接合部１０ｐｎに電流を流し、その電流によるジュール熱でのアニール処理で半導体基板１０に注入した１３族元素、例えば、Ｂ（ボロン），Ａｌ（アルミニウム），Ｇａ（ガリウム）から選択される不純物を拡散させる過程で、光透過部１０Ｓ側からｐｎ接合部１０ｐｎに特定波長λの光を照射し、このようなアニール過程での光照射によってｐｎ接合部１０ｐｎ近傍にドレスト光子を発生させる。 7B, the first electrode 21 is formed by forming a metal electrode film on the substrate 10 and patterning the first electrode 21, and the second electrode. A forward voltage Va is applied between the two electrodes 22 to cause a current to flow through the pn junction 10 pn, and a group 13 element such as B (boron) or Al (aluminum) implanted into the semiconductor substrate 10 by an annealing process using Joule heat by the current. ), Ga (gallium) in the process of diffusing impurities, the light transmission part 10S side is irradiated with light of a specific wavelength λ from the light transmission part 10S side, and the pn junction part is irradiated by light irradiation in such an annealing process. A dressed photon is generated in the vicinity of 10 pn.
　ここで、異なる基板１０間で光信号の送受信を行う一対の発光素子１１と受光素子１２をそれぞれ形成する際には、前述したアニール処理過程で照射する光の波長を同じ波長にする。これによって、アニール処理で照射される光の波長によって発光素子１１の発光波長と受光素子１２の受光波長が特定されることになる。ここで特定される光の波長は、基板１０を透過することができる光の波長であり、基板１０がＳｉ半導体基板の場合には近赤外以上の長波長光が選択される。 Here, when each of the pair of light-emitting elements 11 and light-receiving elements 12 that transmit and receive optical signals between different substrates 10 is formed, the wavelength of light irradiated in the above-described annealing process is set to the same wavelength. Thus, the light emission wavelength of the light emitting element 11 and the light reception wavelength of the light receiving element 12 are specified by the wavelength of light irradiated in the annealing process. The wavelength of the light specified here is the wavelength of light that can be transmitted through the substrate 10, and when the substrate 10 is a Si semiconductor substrate, long-wavelength light of near infrared or higher is selected.
　図９は、本発明の実施形態に係る光インターコネクション装置の具体的な構成例を示している。光インターコネクション装置１は、複数の基板１０（１０－１，１０－２，１０－３）間で光信号の送受信を行っており、具体的には、基板１０－１と基板１０－２間で双方向に光信号の送受信を行い、基板１０－２と基板１０－３間で双方向に光信号の送受信を行っている。 FIG. 9 shows a specific configuration example of the optical interconnection device according to the embodiment of the present invention. The optical interconnection device 1 performs transmission / reception of optical signals between a plurality of substrates 10 (10-1, 10-2, 10-3), specifically, between the substrate 10-1 and the substrate 10-2. The optical signal is transmitted and received bidirectionally, and the optical signal is transmitted and received bidirectionally between the substrate 10-2 and the substrate 10-3.
　この例では、発光素子１１が集合した発光素子アレイ領域５０と受光素子が集合した受光素子アレイ領域６０が矩形状の各基板１０における四辺に沿って配置されており、基板１０の中央部に駆動部７０が配置され、駆動部７０と発光・受光素子アレイ領域５０，６０間に配線パターンが形成されている。発光素子アレイ領域５０には、各発光素子が第１の発光素子Ａであるものと、各発光素子が第２の発光素子Ｄであるものが別領域に配置されており、受光素子アレイ領域６０には、各受光素子が第１の受光素子Ｂであるものと、各受光素子が第２の受光素子Ｃであるものが別領域に配置されている。 In this example, the light emitting element array region 50 in which the light emitting elements 11 are gathered and the light receiving element array region 60 in which the light receiving elements are gathered are arranged along the four sides of each rectangular substrate 10 and are driven at the center of the substrate 10. The part 70 is arranged, and a wiring pattern is formed between the driving part 70 and the light emitting / receiving element array regions 50 and 60. In the light emitting element array region 50, each light emitting element is the first light emitting element A, and each light emitting element is the second light emitting element D are arranged in different regions. The light receiving elements are the first light receiving elements B and the light receiving elements are the second light receiving elements C arranged in different regions.
　そして、各基板１０においては、第１の発光素子Ａの発光素子アレイ領域５０（Ａ）を基板１０の中心に対して９０°回転した位置に第１の受光素子Ｂの受光素子アレイ領域６０（Ｂ）が配置され、第１の受光素子Ｂの受光素子アレイ領域６０（Ｂ）を基板１０の中心に対して９０°回転した位置に第２の受光素子Ｃの受光素子アレイ領域６０（Ｃ）が配置され、第２の受光素子Ｃの受光素子アレイ領域６０（Ｃ）を基板１０の中心に対して９０°回転した位置に第２の発光素子Ｄの発光素子アレイ領域５０（Ｄ）が配置されている。 In each substrate 10, the light receiving element array region 60 (first light receiving element B) is positioned at a position where the light emitting element array region 50 (A) of the first light emitting element A is rotated by 90 ° with respect to the center of the substrate 10. B) is disposed, and the light receiving element array region 60 (C) of the second light receiving element C is located at a position obtained by rotating the light receiving element array region 60 (B) of the first light receiving element B by 90 ° with respect to the center of the substrate 10. Is arranged, and the light emitting element array region 50 (D) of the second light emitting element D is disposed at a position obtained by rotating the light receiving element array region 60 (C) of the second light receiving element C by 90 ° with respect to the center of the substrate 10. Has been.
　第１の受光素子Ｂの受光素子アレイ領域６０（Ｂ）と第２の発光素子Ｄの発光素子アレイ領域５０（Ｄ）には、基板１０の一面側に遮光膜８０が配置されており、第１の発光素子Ａの発光素子アレイ領域５０（Ａ）と第２の受光素子Ｃの受光素子アレイ領域６０（Ｃ）には、基板１０の他面側に遮光膜（図示省略）が配置されている。ここでの遮光膜８０としてはチタンブラックなどの金属膜を採用することができる。 In the light receiving element array region 60 (B) of the first light receiving element B and the light emitting element array region 50 (D) of the second light emitting element D, a light shielding film 80 is disposed on one surface side of the substrate 10. In the light emitting element array region 50 (A) of the first light emitting element A and the light receiving element array region 60 (C) of the second light receiving element C, a light shielding film (not shown) is disposed on the other surface side of the substrate 10. Yes. A metal film such as titanium black can be used as the light shielding film 80 here.
　また、基板１０－１における発光・受光素子アレイ領域の配置パターンの方向を９０°回転したものが基板１０－２における発光・受光素子アレイ領域の配置パターンになっており、基板１０－２における発光・受光素子アレイ領域の配置パターンを９０°回転したものが基板１０－３の発光・受光素子アレイ領域の配置パターンになっている。 In addition, the arrangement pattern of the light emitting / receiving element array region on the substrate 10-2 is obtained by rotating the direction of the arrangement pattern of the light emitting / receiving element array region on the substrate 10-1 by 90 °. The arrangement pattern of the light emitting / receiving element array area of the substrate 10-3 is obtained by rotating the arrangement pattern of the light receiving element array area by 90 °.
　このような光インターコネクション装置１によると、発光・受光素子アレイ領域の配置パターン自体は、全ての基板１０（１０－１，１０－２，１０－３）で共通しており、同工程の繰り返しで発光・受光素子アレイ領域を全ての基板１０に簡易に形成することができる。そして、共通した配置パターンを有する基板における配置パターンの方向を基板１０の中心周りに９０°回転させて積層配置するだけで、異なる基板１０間の発光素子と受光素子の位置決めを行うことができ、対面する基板１０間で光信号の双方向送受信を行うことができる。 According to such an optical interconnection device 1, the arrangement pattern of the light emitting / receiving element array region itself is common to all the substrates 10 (10-1, 10-2, 10-3), and the same process is repeated. Thus, the light emitting / receiving element array region can be easily formed on all the substrates 10. Then, the light emitting element and the light receiving element between different substrates 10 can be positioned simply by rotating and arranging the direction of the arrangement pattern in the substrate having the common arrangement pattern by 90 ° around the center of the substrate 10, Bidirectional transmission and reception of optical signals can be performed between the substrates 10 facing each other.
　このように本発明の実施形態に係る光インターコネクション装置１は、個々の基板１０の形成にコストと時間を要すること無く、また光信号の送受信を行う基板１０相互の位置合わせを簡易に行うことができるものであり、クロストークを抑えた光インターコネクションを簡易に実現することが可能になる。 As described above, the optical interconnection device 1 according to the embodiment of the present invention does not require cost and time for forming the individual substrates 10, and easily performs alignment between the substrates 10 that transmit and receive optical signals. Therefore, it is possible to easily realize optical interconnection with reduced crosstalk.
　以上、本発明の実施の形態について図面を参照して詳述してきたが、具体的な構成はこれらの実施の形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計の変更等があっても本発明に含まれる。また、上述の各実施の形態は、その目的及び構成等に特に矛盾や問題がない限り、互いの技術を流用して組み合わせることが可能である。 As described above, the embodiments of the present invention have been described in detail with reference to the drawings. However, the specific configuration is not limited to these embodiments, and the design can be changed without departing from the scope of the present invention. Is included in the present invention. In addition, the above-described embodiments can be combined by utilizing each other's technology as long as there is no particular contradiction or problem in the purpose and configuration.
１：光インターコネクション装置，１０：基板，１０ｐｎ：ｐｎ接合部，
１１：発光素子，１１ａ：発光部，１１ｂ：遮光部，
１２：受光素子，１２ａ：受光部，１２ｂ：遮光部，
１３：レンズ（マイクロレンズ），
１４ａ，１４ｂ：電源パッド，１５ａ，１５ｂ：電源バンプ，
２０：素子分離層，２０ｅ：溝部，
２１：第１電極，２２：第２電極，２１ａ，２２ａ：引き出し配線，
２３：ｎ＋拡散層，２３ａ：チャネル拡散層，２３ｂ：コンタクト拡散層，
２４：第１層間絶縁膜，２５：第２層間絶縁膜，
５０：発光素子アレイ領域，６０：受光素子アレイ領域，
７０：駆動部，８０：遮光膜，
１００：基板パッケージ，１００ａ：光透過窓部，１００ｂ：外部配線，
１０１：間隔保持部材，１０１ａ：脚部，１０１ｂ：光透過窓部，
１０２，１０３：赤外線透過フィルタ，
２００：実装基板，２０１：ワイヤ，
２１０：バンプ，２２０：スルーホール，
Ａ：第１の発光素子，Ｂ：第１の受光素子，
Ｃ：第２の受光素子，Ｄ：第２の発光素子，
Ｏｓ：一点 1: optical interconnection device, 10: substrate, 10 pn: pn junction,
11: Light emitting element, 11a: Light emitting part, 11b: Light shielding part,
12: light receiving element, 12a: light receiving part, 12b: light shielding part,
13: Lens (microlens),
14a, 14b: power supply pads, 15a, 15b: power supply bumps,
20: element isolation layer, 20e: groove,
21: 1st electrode, 22: 2nd electrode, 21a, 22a: Lead-out wiring,
23: n + diffusion layer, 23a: channel diffusion layer, 23b: contact diffusion layer,
24: first interlayer insulating film, 25: second interlayer insulating film,
50: Light emitting element array area, 60: Light receiving element array area,
70: driving unit, 80: light shielding film,
100: substrate package, 100a: light transmission window, 100b: external wiring,
101: spacing member, 101a: legs, 101b: light transmission window,
102, 103: infrared transmission filter,
200: mounting substrate, 201: wire,
210: Bump, 220: Through hole,
A: 1st light emitting element, B: 1st light receiving element,
C: second light receiving element, D: second light emitting element,
Os: One point

Claims (6)

  1. 　複数の基板を積層配置して基板間で光信号の送受信を行う光インターコネクション装置であって、
    　複数の基板は、個々の基板における発光素子と受光素子の配置パターンが共通しており、
    　光信号の送受信を行う２つの基板は、一つの基板の前記配置パターンの方向が他の基板の前記配置パターンの方向に対して設定角度回転しており、一つの基板に設けた発光素子の光軸上に他の基板の受光素子が配置されていることを特徴とする光インターコネクション装置。     An optical interconnection device that arranges a plurality of substrates and transmits and receives optical signals between the substrates,
    The plurality of substrates have the same arrangement pattern of light emitting elements and light receiving elements on each substrate,
    In two substrates that transmit and receive optical signals, the direction of the arrangement pattern of one substrate is rotated by a set angle with respect to the direction of the arrangement pattern of the other substrate, and the light of the light emitting element provided on one substrate An optical interconnection device, wherein a light receiving element of another substrate is disposed on an axis.
  2. 　前記配置パターンは、発光素子の位置を基板上の一点に対して設定角度回転した位置が受光素子の位置になることを特徴とする請求項１記載の光インターコネクション装置。 2. The optical interconnection device according to claim 1, wherein in the arrangement pattern, a position obtained by rotating the position of the light emitting element by a set angle with respect to one point on the substrate is the position of the light receiving element.
  3. 　前記基板の平面形状が前記一点を中心とした前記設定角度の回転に対して不変であることを特徴とする請求項２に記載された光インターコネクション装置。 3. The optical interconnection device according to claim 2, wherein the planar shape of the substrate is invariant to rotation of the set angle about the one point.
  4. 　前記発光素子が基板の一面側から空間に光を出射する第１の発光素子であり、前記受光素子が基板の他面側から基板内に入射した光を基板の一面側で受光する第１の受光素子であることを特徴とする請求項１～３のいずれかに記載の光インターコネクション装置。 The light emitting element is a first light emitting element that emits light into the space from one surface side of the substrate, and the light receiving element receives light incident on the substrate from the other surface side of the substrate on the one surface side of the substrate. 4. The optical interconnection device according to claim 1, wherein the optical interconnection device is a light receiving element.
  5. 　前記発光素子が基板の一面側から基板内に出射した光を基板の他面側から空間に出射する第２の発光素子であり、前記受光素子が空間から基板の他面側に入射した光を基板の一面側で受光する第２の受光素子であることを特徴とする請求項１～３のいずれかに記載の光インターコネクション装置。 The light emitting element is a second light emitting element that emits light emitted from one surface side of the substrate into the substrate to the space from the other surface side of the substrate, and the light receiving element emits light incident on the other surface side of the substrate from the space. The optical interconnection device according to any one of claims 1 to 3, wherein the optical interconnection device is a second light receiving element that receives light on one surface side of the substrate.
  6. 　複数の基板を積層配置して基板間で光信号の送受信を行う光インターコネクション装置であって、
    　複数の基板は、個々の基板における発光素子と受光素子の配置パターンが共通しており、
    　各基板は、
    　基板の一面側から空間に光を出射する第１の発光素子と、
    　基板の他面側から基板内に入射した光を基板の一面側で受光する第１の受光素子と、
    　基板の一面側から基板内に出射した光を基板の他面側から空間に出射する第２の発光素子と、
    　空間から基板の他面側に入射した光を基板の一面側で受光する第２の受光素子を備え、
    　前記配置パターンは、
    　前記第１の発光素子の位置を基板上の一点に対して設定角度回転した位置が前記第１の受光素子の位置になり、
    　前記第２の発光素子の位置を基板上の一点に対して設定角度回転した位置が前記第２の受光素子の位置になり、
    　光信号の送受信を行う２つの基板は、一つの基板の前記配置パターンの方向が他の基板の前記配置パターンの方向に対して設定角度回転していることを特徴とする光インターコネクション装置。     An optical interconnection device that arranges a plurality of substrates and transmits and receives optical signals between the substrates,
    The plurality of substrates have the same arrangement pattern of light emitting elements and light receiving elements on each substrate,
    Each board
    A first light emitting element that emits light from one surface side of the substrate to the space;
    A first light receiving element that receives light incident on the substrate from the other surface side of the substrate on one surface side of the substrate;
    A second light emitting element that emits light emitted from one side of the substrate into the substrate into the space from the other side of the substrate;
    A second light receiving element that receives light incident on the other surface side of the substrate from the space on one surface side of the substrate;
    The arrangement pattern is
    A position obtained by rotating the position of the first light emitting element by a set angle with respect to one point on the substrate becomes the position of the first light receiving element,
    The position obtained by rotating the position of the second light emitting element by a set angle with respect to one point on the substrate is the position of the second light receiving element,
    An optical interconnection device, wherein two substrates that transmit and receive optical signals have the arrangement pattern direction of one substrate rotated by a set angle with respect to the direction of the arrangement pattern of another substrate.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202704A (en) * 1988-02-09 1989-08-15 Fujitsu Ltd Packing structure for optical submarine repeater internal unit
JP2008003634A (en) * 2005-10-07 2008-01-10 Toyota Motor Corp Fixing member for fixing a plurality of circuit boards, and module using the fixing member

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202704A (en) * 1988-02-09 1989-08-15 Fujitsu Ltd Packing structure for optical submarine repeater internal unit
JP2008003634A (en) * 2005-10-07 2008-01-10 Toyota Motor Corp Fixing member for fixing a plurality of circuit boards, and module using the fixing member

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