WO2015135153A1 - 阵列天线 - Google Patents

阵列天线 Download PDF

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Publication number
WO2015135153A1
WO2015135153A1 PCT/CN2014/073269 CN2014073269W WO2015135153A1 WO 2015135153 A1 WO2015135153 A1 WO 2015135153A1 CN 2014073269 W CN2014073269 W CN 2014073269W WO 2015135153 A1 WO2015135153 A1 WO 2015135153A1
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WO
WIPO (PCT)
Prior art keywords
array antenna
feed
metal layer
metal
antenna according
Prior art date
Application number
PCT/CN2014/073269
Other languages
English (en)
French (fr)
Inventor
程钰间
陈一
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to EP18179805.9A priority Critical patent/EP3462543B1/en
Priority to EP14885247.8A priority patent/EP3109942B1/en
Priority to ES14885247.8T priority patent/ES2687289T3/es
Priority to PCT/CN2014/073269 priority patent/WO2015135153A1/zh
Priority to CN201480000131.8A priority patent/CN105190998B/zh
Publication of WO2015135153A1 publication Critical patent/WO2015135153A1/zh
Priority to US15/261,006 priority patent/US10199743B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H01Q21/0093—Monolithic arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/062—Two dimensional planar arrays using dipole aerials

Definitions

  • the present invention relates to the field of communications, and in particular, to an array antenna. Background technique
  • the antenna is one of the most important front-end passive components of communication equipment. Antennas play a very important role in the performance of communication products.
  • the array antenna basically consists of two parts: the feed network and the antenna element array. Generally, the signal output from the feed network to each antenna unit is in the same phase, and the feed loss is small. The distance between the two antenna elements is two. One of the working wavelengths and high radiation efficiency.
  • the current feeder network of the array antenna can generally adopt microstrip, waveguide, and substrate integrated waveguides.
  • the microstrip feed network can easily achieve the same amplitude in-phase requirement through the parallel feed structure design, but the microstrip line is high.
  • the frequency loss is large and the performance is poor; the transmission loss of the waveguide is the lowest, but due to the large size of the waveguide, the serial feeding mode can generally only be adopted, and the equal-amplitude in-phase requirement can be satisfied only in a narrow frequency range, such as using parallel feeding.
  • the substrate integrated waveguide has low loss and is easier to process and integrate than the waveguide, but has the same problem as the waveguide, that is, the width limitation cannot satisfy the antenna unit.
  • the spacing is one-half the operating wavelength.
  • Embodiments of the present invention provide an array antenna to increase the bandwidth of an antenna to meet the requirements of a system having a wide bandwidth requirement.
  • An array antenna provided by the present invention includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially stacked, and the second dielectric layer is provided with a plurality of metal through holes
  • the plurality of metal vias are electrically connected between the second metal layer and the third metal layer and form a feeding region
  • the first metal layer includes a plurality of sub-arrays, each of which includes a plurality of sub-arrays a radiation array and a power divider, the power divider including a central area and a plurality of branches extending from the central area, the plurality of radiation arrays being respectively connected to the plurality of branches away from the central area
  • the second metal layer is provided with a plurality of coupling slots, and the plurality of coupling slots respectively face a central area of the plurality of power splitters, and the feeding area is used for Feeding a signal, the signal being transmitted to a central area of the
  • the feeding area includes a plurality of feeding units, and projections of the plurality of coupling grooves on the second dielectric layer respectively fall within a range of the plurality of feeding units Inside.
  • each of the feeding units includes a center line, and metal through holes forming the feeding unit are symmetrically distributed on the center line. On both sides, the plurality of coupling grooves are offset from the center line of the corresponding feeding unit.
  • each of the feeding units includes a pair of transmission portions and a short circuit end, and the short circuit end is connected between the pair of transmission portions And at one end of the pair of transmission parts, an end of the pair of transmission parts away from the short-circuit end is an open end, the plurality of feeding units are opposite to each other, and the open ends of the opposite two feeding units are adjacent to each other.
  • the transmissions are parallel to each other.
  • the feeding area further includes a T-type power splitter, where the T-type power splitter is located in two adjacent feeding units Between and close to the open end of the feed unit.
  • each of the T-type power splitters is formed by three metal through holes arranged in a triangle shape.
  • the multiple branches are symmetrically distributed on two sides of the central area, and the radiation array is symmetrically distributed in two of the power splitters. side.
  • the first dielectric layer and the first metal layer form a radiation medium substrate of the array antenna
  • the second metal layer The second dielectric layer and the third metal layer together form a feed medium substrate of the array antenna, and the radiation medium substrate and the feed medium substrate have different thicknesses and dielectric constants.
  • the radiation medium substrate is overlapped with the feed medium substrate, the radiation medium substrate has a thickness of 0.254 mm, and the feeding The dielectric substrate has a thickness of 0.508 mm.
  • the plurality of coupling grooves are elongated, and the plurality of metal through holes are circular.
  • the power splitter is a microstrip power splitter.
  • the plurality of metal through holes penetrate the second metal layer, the second dielectric layer, and the third metal layer.
  • the parallel transmission architecture formed by multiple radiation arrays of sub-arrays and microstrip power dividers increases the bandwidth of the antenna, providing a high-gain broadband compact planar millimeter-wave array antenna.
  • FIG. 1 is a schematic diagram of an array antenna according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a sub-array arrangement of an array antenna according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a distribution of a feeding region and a coupling groove of an array antenna according to an embodiment of the present invention.
  • 4 is a schematic diagram showing distribution of one of a feeding unit and a coupling groove of a feeding region of an array antenna according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram showing a distribution of a sub-array and a coupling slot of an array antenna according to an embodiment of the present invention.
  • Figure 6 is a graph showing the relationship between gain, efficiency and frequency of the array antenna of the present invention.
  • Figure 7 is a radiation pattern for simulation of the array antenna of the present invention.
  • FIGS 8-10 are three different feed architectures for the feed region of the array antenna of the present invention. detailed description
  • an array antenna 100 provided in an embodiment of the present invention includes a first metal layer 10 , a first dielectric layer 40 , a second metal layer 20 , and a second layer which are sequentially stacked.
  • a dielectric layer 50 and a third metal layer 30 the second dielectric layer 50 is provided with a plurality of metal vias 51 electrically connected to the second metal layer 20 and the third metal Formed between layers 30 Feed area 52.
  • the plurality of metal through holes 51 penetrate the second metal layer 20, the second dielectric layer 50, and the third metal layer 30 to form a feeding region 52.
  • the plurality of metal vias 51 may also be buried in the second dielectric layer 50 and electrically connected to the second metal layer 20 and the third metal layer 30 by physical connection.
  • the first metal layer 10 includes a plurality of sub-arrays 11 each including a plurality of radiation arrays 111 and a power divider 112, the power divider 112 including a central region 1122 and extending from the central region A plurality of branches 1124, the plurality of radiation arrays 111 are respectively coupled to an end of the plurality of branches 1124 remote from the central region 1122 to form a structure for parallel transmission of signals.
  • the second metal layer 20 is provided with a plurality of coupling slots 21 , and the plurality of coupling slots 21 respectively face the central region 1122 of the plurality of power dividers 112 .
  • the feed region 52 is configured to feed a signal, the signal is transmitted to the central region 1122 of the power splitter 112 through the plurality of coupling slots 21, and the signal is transmitted through the plurality of branches 1124 To the plurality of radiation arrays 111.
  • the present invention increases the bandwidth of the array antenna 100 by the parallel transmission structure formed by the plurality of radiation arrays 111 of the sub-array 11 and the power divider 112, and provides a high-gain broadband compact planar millimeter-wave array antenna 100.
  • the plurality of metal through holes 51 are formed in the second dielectric layer 50, and the plurality of metal through holes 51 collectively form a feeding region 52.
  • the present invention feeds the array antenna 100 by using a low loss transmission line structure.
  • the signal feeding manner of the feeding region 52 of the array antenna 100 of the present invention has various manners, mainly depending on the circuit transmission line design connected to the array antenna 100, for example: the transmission line of the feeding region 52 is a substrate integrated waveguide, and there are many
  • the transmission line conversion method can connect the substrate integrated waveguide with a transmission line such as a waveguide, a microstrip, a coplanar waveguide, etc., and realize the feeding of the signal of the array antenna 100. Referring to FIG. 8 to FIG.
  • FIG. 10 shows three feeding structures of the feeding region 52 are illustrated, FIG. 8 shows a triangular gradient transition structure, FIG. 9 shows a probe transition structure, and FIG. 10 shows a substrate-based integration.
  • the plurality of sub-arrays 11 of the present invention are distributed in the first metal layer 10 covering the surface of the first dielectric layer 40.
  • the first metal layer 10 is formed into a circuit structure of a plurality of sub-arrays 11 by etching or the like.
  • the sub-array 11 is a patch array of a planar structure and is composed of a microstrip line.
  • the invention can ensure high-efficiency feeding and radiation while ensuring the planar structure. In time, the broadband characteristics of the array antenna are not changed.
  • the array antenna 100 provided by the present invention adopts parallel feeding, the path of the feeding port to each sub-array 11 is ensured, so even if the letter The frequency of the number changes, and the phase of the signals reaching each sub-array 11 is still consistent, so that the performance of the array antenna 100 is maintained, which solves the contradiction between the broadband operation and the high gain requirement.
  • the array antenna 100 is processed by a manufacturing process using a standard multilayer circuit board, which is convenient for mass production, and has high reliability and high repetition rate.
  • the first metal layer 10, the first dielectric layer 40 and the second metal layer 20 are regarded as a first substrate coated with copper on both sides, and the second metal layer 20, the second dielectric layer 50 and the second metal layer 30 are regarded as double-sided copper-clad
  • the second substrate after the first substrate and the second substrate are stacked, forms a structure of the first metal layer 10, the first dielectric layer 40, the second metal layer 20, the second dielectric layer 50, and the third metal layer 30 which are sequentially stacked.
  • the second metal layer of the first substrate overlaps with the second metal layer of the second substrate and is pressed into a layer.
  • the feeding area 52 of the array antenna of the present invention is located directly below the sub-array 11, which realizes miniaturization of the array and saves space.
  • the plurality of sub-arrays 11 of the present invention are 2 x 2 arrays. In other embodiments, the plurality of sub-arrays 11 may also be N X N arrays, and N is a natural number.
  • the feeding area 52 includes a plurality of feeding units 54 .
  • the projections of the plurality of coupling grooves 21 on the second dielectric layer 50 respectively fall within the range of the plurality of feeding units 54 .
  • the plurality of coupling grooves 21 are perpendicular to the second metal layer 20 and the second dielectric layer 50.
  • each of the feeding units 54 has a mirror symmetrical structure, and the metal through holes 51 forming the feeding unit 54 are symmetrically distributed on both sides of the center line A of the feeding unit 54.
  • the plurality of coupling grooves 21 are offset from the corresponding center line A of the feeding unit 54 to cut the surface current.
  • the electromagnetic waves of the feeding region 52 are coupled to the central region 1122 of the power divider 112 through the coupling slot 21, and the branches 1124 of the power divider 112 and the central region 1122 form a back-to-back distributed transmission structure, and the plurality of branch pairs 1124 are distributed in the center.
  • the coupling groove 21 coincides with the central portion 1122, the electric field on the branch 1124 symmetric with respect to the coupling groove 21 is opposite in direction.
  • Each of the feed units 54 includes a pair of transmission portions 56, a short-circuit end 58 and an open end 59, and the short-circuit end 58 is connected between the pair of transmission portions 56 and located at the pair of transmission portions 56.
  • One end, the open end 59 is located on a side of the transmission portion 56 away from the short-circuiting end 58, the plurality of feeding units 54 are opposite to each other, and the opposite ends 59 of the opposite two feeding units 54 are adjacent to each other.
  • the transmission portions 56 are parallel to each other.
  • Each of the feeding units 54 is formed by a metal through hole 51.
  • each of the transmitting portions is formed by four metal through holes arranged in a straight line, and the short circuit ends are formed by two metal through holes to form a short circuit.
  • the two metal through holes 51 of the end 58 are connected between the pair of transfer portions 56 to form a substrate integrated waveguide whose one end is closed.
  • the length of the coupling slot 21 is one-half of the center frequency of the antenna 100, and the length of the coupling slot 21 from the short-circuit end 58 is a quarter wavelength of the center frequency.
  • the performance of an antenna is related to frequency. Generally speaking, the performance of an antenna is best at a certain frequency. This frequency is called the center frequency. After deviating from this frequency, the performance of the antenna will decrease whether the frequency becomes lower or higher.
  • the principle is that the constituent structures in the antenna, such as the transmission line, the transmission line conversion structure, the structure and size of the radiation unit, are all related to the signal frequency.
  • the constituent structures in the antenna such as the transmission line, the transmission line conversion structure, the structure and size of the radiation unit.
  • the feeding area 52 further includes a T-type power divider 55 located between two adjacent feeding units 54 and close to the open end 59 of the feeding unit 54. .
  • the function of the T-type power divider 55 is to divide one signal into two paths.
  • each of the T-type power splitters 55 is formed by three metal through holes 51 arranged in a triangular shape.
  • the plurality of branches 1124 are symmetrically distributed on both sides of the central area 1122, and the radiation arrays 111 are symmetrically distributed on both sides of the power splitter 112.
  • the first dielectric layer 40 and the first metal layer 10 form a radiation dielectric substrate of the array antenna 100, the second metal layer 20, the second dielectric layer 50, and the third metal layer 30. Together, a feed medium substrate of the array antenna 100 is formed, the radiation medium substrate being different in thickness and dielectric constant from the feed medium substrate. Since the radiation medium substrate and the feed medium substrate are independent dielectric substrates, the thickness and dielectric constant of the radiation medium substrate can be selected according to the design requirements of the feeding and radiation of the array antenna, and the feeding medium substrate The thickness and dielectric constant can be selected according to the integration convenience with the active circuit, and the selection is flexible, which is advantageous for ensuring the bandwidth and gain of the array antenna 100.
  • the radiation medium substrate is overlapped with the feed medium substrate.
  • the thickness of the radiation medium substrate is 0.254 mm, and the thickness of the feed medium substrate is 0.508 mm.
  • the plurality of coupling grooves 21 have an elongated shape
  • the plurality of metal through holes 51 have a circular shape
  • the radiation array 111 has a square shape.
  • the power splitter 112 is a microstrip power splitter having a planar structure, so that the array antenna 100 is compact and small in size.
  • Figure 6 is a graph showing the relationship between gain, efficiency and frequency of the array antenna 100 of the present invention.
  • the frequency of the array antenna 100 is in the range of 90-98 GHz
  • the gain achieved is in the range of 27.7-28.8 dBi
  • the relative bandwidth is 9.5%
  • the efficiency of the array antenna 100 is in the range of 0.18-0.22.
  • Fig. 7 is a radiation pattern for simulation of the array antenna of the present invention.
  • the array antenna 100 achieves high gain and a low sidelobe level of -12.8 dB.

Abstract

一种阵列天线包括依次层叠的第一金属层、第一介质层、第二金属层、第二介质层和第三金属层，第二介质层设有多个金属通孔，多个金属通孔形成馈电区，第一金属层包括多个子阵，每个子阵均包括多个辐射阵列和一个功分器，功分器包括中心区和自所述中心区延伸而出的多个分支，辐射阵列分别连接在多个分支的远离中心区的一端，第二金属层设有多个耦合槽，多个耦合槽分别正对中心区，馈电区用于馈入信号，信号经过多个耦合槽被传输至所述功分器的中心区，再经过多个分支将所述信号传输至辐射阵列。本发明通过子阵的多个辐射阵列和功分器形成的并联传输架构，增加天线的带宽，提供了高增益宽带紧凑型平面毫米波阵列天线。

Description

阵列天线
技术领域
本发明涉及通信领域， 尤其涉及一种阵列天线。 背景技术
天线是通信设备最重要的前端无源器件之一。天线对通信产品性能有着 非常重要的作用。 阵列天线基本由馈电网络和天线单元阵列两大部分构成，一 般要求馈电网络输出到每个天线单元的信号等幅同相，且馈电损耗小， 两个天 线单元之间的间距为二分之一工作波长， 且辐射效率高。
目前的阵列天线的馈电网络一般可采用微带、 波导、基片集成波导几种方 式， 其中微带馈电网络容易通过并型馈电结构设计达到等幅同相要求，但微带 线在高频损耗大， 性能较差； 波导传输损耗最低， 但由于波导尺寸较大， 一般 只能采用串行馈电方式， 只能在较窄频段范围内满足等幅同相要求，如采用并 行馈电，则受波导宽度限制，不易满足天线单元间距为二分之一工作波长要求； 基片集成波导损耗低，比波导更易加工和集成，但存在与波导相同的问题，即， 宽度限制不能满足天线单元间距为二分之一工作波长。
故， 现有技术中的阵列天线存在高频损耗大、 性能差及带宽窄的缺点。 发明内容
本发明实施例提供了提供一种阵列天线， 来增加天线的带宽， 以满足对带 宽要求较宽的系统的需求。
本发明提供的一种阵列天线包括依次层叠的第一金属层、第一介质层、第 二金属层、 第二介质层和第三金属层， 所述第二介质层设有多个金属通孔， 所 述多个金属通孔电连接于所述第二金属层和所述第三金属层之间并形成馈电 区， 所述第一金属层包括多个子阵，每个子阵均包括多个辐射阵列和一个功分 器， 所述功分器包括中心区和自所述中心区延伸而出的多个分支，所述多个辐 射阵列分别连接在所述多个分支的远离所述中心区的一端以形成并联传输信 号的架构， 所述第二金属层设有多个耦合槽，所述多个耦合槽分别正对所述多 个功分器的中心区， 所述馈电区用于馈入信号， 所述信号经过所述多个耦合槽 被传输至所述功分器的中心区，再经过所述多个分支将所述信号传输至所述多 个辐射阵列。
在第一种可能的实现方式中， 所述馈电区包括多个馈电单元， 所述多个耦 合槽在所述第二介质层上的投影分别落在所述多个馈电单元的范围内。
结合第一种可能的实现方式，在第二种可能的实现方式中，每个所述馈电 单元均包括一条中心线，形成所述馈电单元的金属通孔对称分布在所述中心线 的两侧， 所述多个耦合槽偏离所对应的所述馈电单元的中心线。
结合第一种可能的实现方式，在第三种可能的实现方式中，每个所述馈电 单元均包括一对传输部和一个短路端，所述短路端连接在所述对传输部之间且 位于所述对传输部的一端， 所述对传输部的远离所述短路端的一端为开口端， 所述多个馈电单元两两相对， 相对的两个馈电单元的开口端相互邻近。
结合第三种可能的实现方式，在第四种可能的实现方式中，所述传输部相 互平行。
结合第三种可能的实现方式，在第五种可能的实现方式中， 所述馈电区还 包括 T型功分器， 所述 T型功分器位于相邻的两个所述馈电单元之间， 且靠 近所述馈电单元的开口端。
结合第五种可能的实现方式， 在第六种可能的实现方式中， 每个所述 T 型功分器均是通过三个呈三角形排列的所述金属通孔形成的。
结合上述任意一项可能实施的方式，在第七种可能实现的方式中， 所述多 个分支对称分布在所述中心区的两侧，所述辐射阵列对称分布在所述功分器的 两侧。
结合上述任意一项可能实施的方式，在第八种可能实现的方式中， 所述第 一介质层与所述第一金属层形成所述阵列天线的辐射介质基片，所述第二金属 层、 所述第二介质层及所述第三金属层共同形成所述阵列天线的馈电介质基 片， 所述辐射介质基片与所述馈电介质基片的厚度及介电常数不同。
结合上述任意一项可能实施的方式，在第九种可能实现的方式中， 所述辐 射介质基片与所述馈电介质基片重合， 所述辐射介质基片的厚度为 0.254mm, 所述馈电介质基片的厚度为 0.508mm。
结合上述任意一项可能实施的方式，在第十种可能实现的方式中， 所述多 个耦合槽呈长条形， 所述多个金属通孔呈圆形。
结合上述任意一项可能实施的方式，在第十一种可能实现的方式中， 所述 功分器为微带功分器。
结合上述任意一项可能实施的方式，在第十二种可能实现的方式中， 所述 多个金属通孔贯穿所述第二金属层、 所述第二介质层及所述第三金属层。
相较于现有技术，通过子阵的多个辐射阵列和微带功分器形成的并联传输 架构， 增加天线的带宽， 提供了高增益宽带紧凑型平面毫米波阵列天线。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施 例中所需要使用的附图作筒单地介绍，显而易见地， 下面描述中的附图仅仅是 本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的 前提下， 还可以根据这些附图获得其他的附图。
图 1为本发明一种实施方式中阵列天线的示意图。
图 2为本发明一种实施方式之阵列天线的子阵排布示意图。
图 3为本发明一种实施方式之阵列天线的馈电区和耦合槽分布示意图。 图 4 为本发明一种实施方式之阵列天线的馈电区的其中一个馈电单元和 耦合槽分布示意图。
图 5为本发明一种实施方式之阵列天线的子阵和耦合槽分布示意图。 图 6为本发明的阵列天线的增益、 效率与频率之间的关系曲线图。
图 7为本发明的阵列天线进行仿真的辐射方向图。
图 8-图 10为本发明的阵列天线之馈电区的三种不同的馈电架构。 具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清 楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而不是 全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造 性劳动前提下所获得的所有其他实施例， 都属于本发明保护的范围。
请参阅图 1、 图 2、 图 3及图 5 , 本发明一种实施方式中提供的阵列天线 100包括依次层叠的第一金属层 10、 第一介质层 40、 第二金属层 20、 第二介 质层 50和第三金属层 30, 所述第二介质层 50设有多个金属通孔 51 , 所述多 个金属通孔 51电连接于所述第二金属层 20与所述第三金属层 30之间并形成 馈电区 52。 一种实施方式中， 所述多个金属通孔 51贯穿所述第二金属层 20、 所述第二介质层 50及所述第三金属层 30并形成馈电区 52, 另一种实施方式 中，所述多个金属通孔 51也可以内埋在第二介质层 50内，通过物理连接的方 式电连接至第二金属层 20和第三金属层 30。 所述第一金属层 10包括多个子 阵 11 , 每个子阵 11均包括多个辐射阵列 111和一个功分器 112, 所述功分器 112包括中心区 1122和自所述中心区延伸而出的多个分支 1124, 所述多个辐 射阵列 111分别连接在所述多个分支 1124的远离所述中心区 1122的一端以形 成并联传输信号的架构。 所述第二金属层 20设有多个耦合槽 21 , 所述多个耦 合槽 21分别正对所述多个功分器 112的中心区 1122。 所述馈电区 52用于馈 入信号， 所述信号经过所述多个耦合槽 21被传输至所述功分器 112的中心区 1122, 再经过所述多个分支 1124将所述信号传输至所述多个辐射阵列 111。
本发明通过子阵 11的多个辐射阵列 111和功分器 112形成的并联传输架 构，增加阵列天线 100的带宽，提供了高增益宽带紧凑型平面毫米波阵列天线 100。
具体而言， 在第二介质层 50开设所述多个金属通孔 51 , 所述多个金属通 孔 51共同形成馈电区 52, 本发明采用低损耗的传输线结构对阵列天线 100进 行馈电， 本发明阵列天线 100的馈电区 52的信号馈入方式有多种方式， 主要 取决于与阵列天线 100连接的电路传输线设计， 例如： 馈电区 52的传输线为 基片集成波导， 有多种传输线转换方式可将基片集成波导与波导、 微带、 共面 波导等传输线连接， 实现阵列天线 100信号的馈入。 请参阅图 8至图 10, 举 例说明馈电区 52的三种馈电架构， 图 8所示为三角渐变过渡结构， 图 9所示 为探针过渡结构， 图 10所示为基于基片集成波导 ( SIW ) 的共面波导过渡结 构。
本发明的多个子阵 11分布于覆盖在第一介质层 40表面的第一金属层中 10, 制作过程中， 将第一金属层 10通过蚀刻等方法形成多个子阵 11的电路结 构， 本发明的子阵 11为平面结构的贴片阵列， 由微带线构成。 本发明能够保 证平面结构的同时实现高效馈电与辐射。 用时， 可保证阵列天线的宽带特性不改变， 由于本发明提供的阵列天线 100 采用并行馈电， 保证了馈电端口到达各个子阵 11的路径一致， 因此， 即使信 号频率发生变化， 到达各子阵 11 的信号相位仍是一致的， 使得阵列天线 100 的性能得以保持， 解决了宽带工作与高增益需求的矛盾。
具体的制作过程中，所述阵列天线 100通过采用标准多层电路板的制作工 艺进行加工， 便于大规模生产， 具备高可靠性、 高重复率。 第一金属层 10、 第一介质层 40与第二金属层 20视为两面覆铜的第一基板， 第二金属层 20、 第二介质层 50及第二金属层 30视为两面覆铜的第二基板，第一基板与第二基 板叠加后就形成了依次层叠的第一金属层 10、第一介质层 40、第二金属层 20、 第二介质层 50和第三金属层 30的架构，在叠加的过程中， 第一基板的第二金 属层与第二基板的第二金属层重叠并且被压合成为一层。本发明阵列天线的馈 电区 52位于子阵 11的正下方， 实现了阵列的小型化， 节约空间。
本发明多个子阵 11为 2 x 2阵列， 在其他实施方式中， 所述多个子阵 11 也可以为 N X N阵列， N为自然数。
请参阅图 3 , 所述馈电区 52 包括多个馈电单元 54, 所述多个耦合槽 21 在所述第二介质层 50上的投影分别落在所述多个馈电单元 54的范围内。本实 施方式中， 所述多个耦合槽 21垂直于第二金属层 20和第二介质层 50。
请参阅图 4, 每个所述馈电单元 54均呈镜相对称结构， 形成所述馈电单 元 54的金属通孔 51对称分布在所述馈电单元 54的中心线 A的两侧， 所述多 个耦合槽 21偏离所对应的所述馈电单元 54的中心线 A, 以切割表面电流。通 过耦合槽 21将馈电区 52的电磁波耦合到功分器 112的中心区 1122, 功分器 112的各分支 1124与中心区 1122形成背靠背分布的传输结构，多个分支对 1124 称分布在中心区 1122的两侧， 由于耦合槽 21与中心区 1122重合， 关于耦合 槽 21对称的分支 1124上的电场方向相反。
每个所述馈电单元 54均包括一对传输部 56、 一个短路端 58和一个开口 端 59, 所述短路端 58连接在所述对传输部 56之间且位于所述对传输部 56的 一端， 所述开口端 59位于所述传输部 56之远离所述短路端 58的一侧， 所述 多个馈电单元 54两两相对， 相对的两个馈电单元 54的开口端 59相互邻近。 本实施方式中， 所述传输部 56相互平行。 每个馈电单元 54均由金属通孔 51 排布形成， 本实施方式中， 每个传输部由四个排列成直线形的金属通孔形成， 短路端由两个金属通孔形成，形成短路端 58的两个金属通孔 51连接在一对传 输部 56之间， 形成了一端闭合的基片集成波导。 耦合槽 21长度为天线 100的中心频率的二分之一波长，耦合槽 21距离短 路端 58的长度为中心频率的四分之一波长。 天线的性能与频率相关， 一般来 说， 天线在某一个频率的性能最好， 这个频率称之为中心频率， 偏离这个频率 后， 无论是频率变低还是变高， 天线的性能都会下降， 其原理是天线中的组成 结构，如传输线、传输线转换结构、辐射单元的结构、尺寸均与信号频率相关。 设计天线时必须根据实际需求，设定一个中心频率， 以此作为设计输入来设计 天线的各个组成部分， 然后在设计天线及其组成部分的方案时，会尽量考虑在 偏离中心频率情况下， 性能下降緩慢的方案。
所述馈电区 52还包括 T型功分器 55 , 所述 T型功分器 55位于相邻的两 个所述馈电单元 54之间， 且靠近所述馈电单元 54的开口端 59。 所述 T型功 分器 55作用是把一路信号分为两路。 本实施方式中， 每个所述 T型功分器 55 均是通过三个呈三角形排列的所述金属通孔 51形成的。
所述多个分支 1124对称分布在所述中心区 1122的两侧， 所述辐射阵列 111对称分布在所述功分器 112的两侧。
所述第一介质层 40与所述第一金属层 10形成所述阵列天线 100的辐射介 质基片， 所述第二金属层 20、 所述第二介质层 50及所述第三金属层 30共同 形成所述阵列天线 100的馈电介质基片，所述辐射介质基片与所述馈电介质基 片的厚度及介电常数不同。由于辐射介质基片与所述馈电介质基片为相互独立 的介质基片，辐射介质基片的厚度和介电常数可以根据阵列天线的馈电及辐射 的设计需求进行选择，馈电介质基片的厚度和介电常数可以根据与有源电路的 集成方便度进行选择， 选择灵活， 有利于保证阵列天线 100的带宽和增益。
所述辐射介质基片与所述馈电介质基片重合， 本发明一种实施方式中， 所 述辐射介质基片的厚度为 0.254mm, 所述馈电介质基片的厚度为 0.508mm。
本实施方式中， 所述多个耦合槽 21呈长条形， 所述多个金属通孔 51呈圆 形， 所述辐射阵列 111呈正方形。
所述功分器 112为微带功分器，呈平面结构，使得阵列天线 100结构紧凑， 体积小。
图 6为本发明的阵列天线 100的增益、效率与频率之间的关系曲线图。 阵 列天线 100的频率在 90-98GHz范围内， 实现的增益在 27.7-28.8dBi范围内， 相对带宽达 9.5%, 阵列天线 100的效率在 0.18-0.22范围内。 图 7为本发明的阵列天线进行仿真的辐射方向图，从图中可知， 阵列天线 100实现了高增益和 -12.8dB低副瓣电平。
以上对本发明实施例所提供的一种阵列天线进行了详细介绍，本文中应用 了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用 于帮助理解本发明的方法及其核心思想； 同时， 对于本领域的一般技术人员， 依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述, 本说明书内容不应理解为对本发明的限制。

Claims

权 利 要 求
1. 一种阵列天线， 其特征在于， 所述阵列天线包括依次层叠的第一金属 层、 第一介质层、 第二金属层、 第二介质层和第三金属层， 所述第二介质层设 有多个金属通孔，所述多个金属通孔电连接于所述第二金属层与所述第三金属 层之间并形成馈电区， 所述第一金属层包括多个子阵，每个子阵均包括多个辐 射阵列和一个功分器，所述功分器包括中心区和自所述中心区延伸而出的多个 分支，所述多个辐射阵列分别连接在所述多个分支的远离所述中心区的一端以 形成并联传输信号的架构， 所述第二金属层设有多个耦合槽， 所述多个耦合槽 分别正对所述多个功分器的中心区，所述馈电区用于馈入信号， 所述信号经过 所述多个耦合槽被传输至所述功分器的中心区，再经过所述多个分支将所述信 号传输至所述多个辐射阵列。
2. 如权利要求 1 所述的阵列天线， 其特征在于， 所述馈电区包括多个馈 电单元，所述多个耦合槽在所述第二介质层上的投影分别落在所述多个馈电单 元的范围内。
3. 如权利要求 2所述的阵列天线， 其特征在于， 每个所述馈电单元均呈 镜相对称结构，形成所述馈电单元的金属通孔对称分布在所述馈电单元的中心 线的两侧， 所述多个耦合槽偏离所对应的所述馈电单元的中心线。
4. 如权利要求 所述的阵列天线， 其特征在于， 每个所述馈电单元均包 括一对传输部、一个短路端和一个开口端， 所述短路端连接在所述对传输部之 间且位于所述对传输部的一端 ,所述开口端位于所述传输部之远萬所述短路端 的一侧，所述多个馈电单元两两相对，相对的两个馈电单元的开口端相互邻近。
5. 如权利要求 4任意一项所述的阵列天线， 其特征在于， 所述传输部相 互平行。
6. 如权利要求 4任意一项所述的阵列天线， 其特征在于， 所述馈电区还 包括 T型功分器， 所述 Τ型功分器位于相邻的两个所述馈电单元之间， 且靠 近所述馈电单元的开口端。
7. 如权利要求 6任意一项所述的阵列天线， 其特征在于， 每个所述 Τ型 功分器均是通过三个呈三角形排列的所述金属通孔形成的。
8. 如权利要求 1-7任意一项所述的阵列天线，其特征在于，所述多个分支 对称分布在所述中心区的两侧， 所述辐射阵列对称分布在所述功分器的两侧。
9. 如权利要求 1-7任意一项所述的阵列天线，其特征在于，所述第一介质 层与所述第一金属层形成所述阵列天线的辐射介质基片， 所述第二金属层、所 述第二介质层及所述第三金属层共同形成所述阵列天线的馈电介质基片，所述 辐射介质基片与所述馈电介质基片的厚度及介电常数不同。
10. 如权利要求 9任意一项所述的阵列天线， 其特征在于， 所述辐射介质 基片与所述馈电介质基片重合，所述辐射介质基片的厚度为 0.254mm,所述馈 电介质基片的厚度为 0.508mm。
11. 如权利要求 1-7任意一项所述的阵列天线， 其特征在于， 所述多个耦 合槽呈长条形， 所述多个金属通孔呈圆形。
12. 如权利要求 1-7任意一项所述的阵列天线， 其特征在于， 所述功分器 为微带功分器。
13. 如权利要求 1-7任意一项所述的阵列天线， 其特征在于， 所述多个金 属通孔贯穿所述第二金属层、 所述第二介质层及所述第三金属层。
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