WO2015124427A1 - Del sur corps céramique - Google Patents

Del sur corps céramique Download PDF

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Publication number
WO2015124427A1
WO2015124427A1 PCT/EP2015/052285 EP2015052285W WO2015124427A1 WO 2015124427 A1 WO2015124427 A1 WO 2015124427A1 EP 2015052285 W EP2015052285 W EP 2015052285W WO 2015124427 A1 WO2015124427 A1 WO 2015124427A1
Authority
WO
WIPO (PCT)
Prior art keywords
ceramic body
led
led module
module according
light
Prior art date
Application number
PCT/EP2015/052285
Other languages
German (de)
English (en)
Inventor
Farhang Ghasemi Afshar
Axel Kaltenbacher
Robert GAREIS
Original Assignee
Osram Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Gmbh filed Critical Osram Gmbh
Publication of WO2015124427A1 publication Critical patent/WO2015124427A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to an LED module with egg ⁇ nem substrate on which an LED is arranged.
  • LED module refers to an optoelectronic construction ⁇ group usually with a plurality of LEDs
  • LED generally mean both an inorganic and an organic light emitting diode.
  • the present invention is the technical problem, add a particularly advantageous LED module ⁇ .
  • this object solves an LED module with egg ⁇ ner LED, which has on a LED topside designed for the emission of light with a focus beam Lichtab ⁇ radiating surface, and a ceramic body as Sub ⁇ strat, in the side directions perpendicular to the Schwerpunkstrahl respectively has a ceramic body side extent corresponding to at least 2 times a side extension of the LED taken in the same same lateral direction, and the LED on the ceramic body is arranged, with one of its LED top opposite LED bottom facing a ceramic body top, and further wherein the ceramic body is thus at least translucent, that a backscatter portion of the light, so backscatter light that with a directional component the center of gravity beam opposite to the ceramic body top falls, is at least partially transmitted to one of these opposite Keramik redesign- underside, wherein at least a major part of the transmitted there backscatter light is reflected, then with a direction component in the direction of the centroid beam, the luminous efficiency of Increase LED module.
  • an at least translucent ceramic body is provided which can also be transparent so as a function of ceramic mate rial ⁇ and thickness.
  • backward scattered light falls on the Keramikkör ⁇ per-top, and there is (at least partly) transmitted in the ceramic body to the opposite ceramic body-base, and then after reflection in the opposite direction, that is, with a direction component in the direction of the center of spot beam again to exit through the Kera ⁇ mikève top.
  • the direction component "in the direction" of the center of gravity beam is parallel to the latter and points in the same direction; the light becomes then often additionally have a directional component in egg ⁇ ner lateral direction.
  • the LED module can deliver more light than in a reference case without reflection.
  • This combination according to the invention of transmission and underside reflection can be advantageous, for example, over an alternatively conceivable mirroring of the upper side, for example when no recesses are required for the LED and, if appropriate, for a conductor track structure serving for contacting same when applying a reflection layer.
  • the underside can be provided in a comparatively large area and thus largely structurally without any structuring effort.
  • an edge region of the total ceramic body could also be provided comparatively thick and not translucent or underside non-reflective.
  • Ceramic body thus refers to at least a Be ⁇ area of the overall ceramic body in which the LED is arranged and which has a ceramic body side extension of at least 2 times, preferably 4 times WEI, ter preferably 6 times ( If a plurality of LEDs are preferably provided, the respective subareas may generally also overlap, ie it is necessary for each LED to have a correspondingly transmissive / reflective area, however, this can also be “used” by another LED, but each LED is preferably provided with its own area of corresponding size
  • the center of gravity beam is the mean value of the rays of the light emitted by the LED at the light emission surface Beam forms ge ⁇ (ie the plurality each emitted at different locations in different directions radiations); the "rays" are a common theoretical approach for modeling light or its propagation (Raytracing) .In preferred embodiments, the centroid ray is perpendicular to the light emission surface and with its base in the center thereof, such as in the case of a Lambertian radiation characteristic.
  • top / "bottom” or “top” / “bottom” create a reference system within the LED module, which is therefore crucial for the relative arrangement of its components; However, the details have no implication regarding a later mounting orientation of the LED module, this can be mounted, for example in the case of a downlight module with the tops facing down.
  • the LED is arranged on the ceramic body, preferably centrally with respect to the lateral directions; "On" means insofar above it, but not necessarily immediately adjacent thereto.
  • "On" means insofar above it, but not necessarily immediately adjacent thereto.
  • a ⁇ mounting the LED serving ⁇ compound layer may be provided between the ceramic body and LED, such as a joint connection layer, such as a Adhesive layer.
  • a wiring pattern between the ceramic body and LED can be arranged and be electrically connected to the LED underside about a solder or diffusion solder layer or routing ⁇ compatible adhesive (in common usage "backside contact"). It can for example, also a plurality of base contacts provided and then the LED alone be electrically connected via this, but also a combination of bottom and top side contact is possible.
  • LED in the context of this disclosure can also be read on an already self-contained LED chip, for example on an SMD component ⁇ Surface Mounted Device ).
  • LED preferably means an LED which is not housed individually Chip, which is then housed together or is only together with the other LED chips of the LED module, that is arranged on the ceramic body and in ⁇ example, after an electrical contact with a backfilling material is encapsulated, such as by encapsulation, for example with silicone ,
  • the "backscatter light” is light originally generated in the LED (which also includes light generated by an associated phosphor), for example as a result of scattering processes, for example in a just-mentioned filling material, and / or also due to reflections with a directional component .
  • opposite to the focus beam is incident on the ceramic body top the "sat Chryslerge ⁇ " directional component parallel to gravity ⁇ beam and points in the opposite direction, ie downwards; Usually it is supplemented by a lateral direction component.
  • the ceramic body is provided such that a transmission ratio of at least 60%, with increasing preference in this order Minim ⁇ least 70%, 80% and 90% of backscattered light to the ceramic body underside is transmitted.
  • the ceramic body could also be provided, for example, from a ceramic material which is already transmissive, and the transmission component would then be largely decoupled from the thickness, in any case in the context of existing ceramic body maximum thicknesses of a few millimeters.
  • a ⁇ be already in itself transparent ceramic material is a ceramic spinel (MgO ⁇ A1 2 0 3).
  • the parallel to the centroid beam apparent thickness of the ceramic body is limited and has to be not more than 500 ym, in this Rei ⁇ hen technically increasing preference not more than 450 ym, 400 ym, 350 ym or 300 ym, respectively.
  • "thickness" is to be read as the average thickness over the ceramic body.
  • the desired translucence which may offer advantages in terms of cost as part of a mass production. It need not be provided if necessary to manufacture on a ⁇ agile, transparent for itself Keramikma ⁇ TERIAL then that.
  • the thickness limitation can also offer such advantages and be of interest, because about a correspondingly thin ceramic body, the heat can be better dissipated to a lower side provided heat sink.
  • a lower limit may be preferred for the ceramic body thickness, even independently of the provision of an upper limit (minimum and maximum thickness should also be disclosed independently of each other).
  • Preferred minimum thicknesses are at least 50 ⁇ m, in this order increasingly preferably at least 75 ⁇ m, 100 ⁇ m, 125 ⁇ m, 150 ⁇ m 175 ⁇ m or 200 ⁇ m.
  • Ausges ⁇ taltung is a reflection component of at least 80%, in the ⁇ ser order increasing preference at least 85%, 90%, 95% and 97%, is reflected with a directional component in the direction of the center of gravity punk beam.
  • a reflection layer on the ceramic body underside is vorgese ⁇ hen for reflection, preferably a (optionally via a Haftver ⁇ middle layer in between) on the ceramic body adherent reflection layer.
  • the reflection in, for example, could also be achieved by total reflection in conjunction with a surface structure favoring it.
  • the reflection layer may also be a reflective foil in general et ⁇ wa, for example, a Microcellular PET film (MC-PET); the Reflektorfo ⁇ lie, due to the used base material and / or due to a surface structuring, introduced for example into the surface cavities, be reflective.
  • a reflection coating it would also be possible, for example, to provide a matrix material with randomly embedded reflection particles, for example a matrix material, for example on an organic basis, with color pigments and / or metal particles therein, for example silicon with titanium dioxide particles embedded therein.
  • a metal layer is preferred as the reflection ⁇ layer, in general, such as an aluminum layer; furthermore preferred is a silver-based reflection layer, which is more preferably technically more conventional Purity grade consists exclusively of silver.
  • IMP EXP ⁇ together with the ceramic body, a multi-layer system may be provided on the undersidesver Part ⁇ Lich, can thus for example also be an adhesion promoter ⁇ mid provided between the ceramic body and the actual metal reflective layer, such as zirconium oxide, for example, with a thickness of several nanometers.
  • a further coating can also be applied on the underside of the reflection layer, for example for protection against mechanical action and / or as corrosion protection. It may for example be the underside of the reflection layer applied ⁇ a protective coating with titanium and / or ruthenium.
  • a layer sequence silver (as a reflection layer), titanium and then nickel vanadium, wherein the titanium layer, for example, a thickness of at least 30 nm, preferably at least 40 nm, and of at most 80 nm, preferably at most 60 nm;
  • the NiV layer may have a thickness of at least 50 nm, preferably at least 100 nm, and at most 300 nm, preferably at most 200 nm.
  • the reduced structuring effort can in particular lead to tra ⁇ gen, because otherwise would be structurally in a front-side application additional recesses for a front side trace structure. Or it would be the conductor track structure to avoid short circuits only be covered with an additional insulation layer, which means an extra effort.
  • the reflection layer has in a preferred embodiment a maximum thickness of 500 nm in this order to ⁇ Referring preferably at most 450 nm, 400 nm, 350 nm, 300 nm and 250 nm; in the case of an uneven thickness, in turn, an average thickness formed over the ceramic body (that is, over the range of the total ceramic body discussed above) is considered.
  • a reflection layer with a constant thickness is preferred, also with regard to the simplest possible application.
  • the inventors have observed advantages insofar as a warping of the ceramic body-reflection layer composite can at least be limited.
  • a metal reflective layer typically has a size much ⁇ ren thermal expansion coefficient than the ceramic body, which may lead to a changing warpage example, in the on and off due ⁇ turn in the application temperature.
  • ⁇ parts are also generally providing a lower-side coating over the discussed reference case with upper reflective layer because the lower-side reflecting layer may represent a certain "counterweight" to a top-side interconnect structure to ⁇ minimum.
  • the conductor track structure and Reflective layer on the ceramic body transmitted forces in an arrangement of interconnect structure and reflection layer on the same side (top side in the reference case) to some extent add, whereas by the Auftei- a partial compensation can be achieved on the top and bottom.
  • a certain minimum thickness of the reflective layer is preferably (and has to be irrespective disclosed by a maximum thickness), for example of at least ⁇ least 50 nm, more preferably at least 100 nm, particular ⁇ DERS preferably at least 150 nm.
  • the ceramic body top is disposed completely below the LED; a plane containing the LED bottom is therefore not cut by the ceramic body top.
  • a plane containing the LED bottom is therefore not cut by the ceramic body top.
  • the ceramic body top is preferably planar, that is flat, and extends parallel to said plane including the LED bottom (which, in turn, is particularly preferred for the total ceramic body top).
  • the ceramic body is continuous, so contiguous provided as a part; However, at least one or more through contacts for electrical contacting of the LED can definitely pass through the ceramic body.
  • the ceramic body thus has a comparatively simple structure.
  • includes the LED module before ⁇ preferably a plurality of LEDs, such as at least 6, 8, 10, 12, 14, 16, 18 or 20 LEDs (their respective ceramic bodies are part of a ceramic body).
  • the total ⁇ ceramic body is preferably a plate, that has a flat top and a flat bottom (parallel moving each other), so a constant thickness.
  • the plate-shaped total ceramic body has a respective extent, which is a multiple of the thickness, about at least 20-, 40-, 60-, 80- or 100-fold thereof (considered in all the center of gravity beam containing cutting planes).
  • the ceramic body is preferably a monolithic part and, more preferably, this also applies to the total ceramic body.
  • “Monolithic” means in this respect without material boundaries in the interior between areas of different ceramic material and / or between areas of different production history.
  • the ceramic body is thus formed in one step from a continuous ceramic material, which in general, however, should exclude no aftertreatment, so as a removal of ceramic material for final shape.
  • the ceramic material is an inorganic, non-metallic material ⁇ .
  • an oxide ceramic, at 3 ⁇ game as Al 2 O (alumina), in particular non-porous, or non-oxide ceramics such as A1N is.
  • the ceramic material may, for example, a refractive index of at least 1.3 ⁇ , preferably at least 1.4, and (dependent) of at most 1.8, preferably at most 1.7, have (at 589 nm).
  • the LED module may also have a heat sink, on the underside of the ceramic body.
  • the heat sink which can be provided for example of a metal, for example, have a substantially planar top and be structured on its underside, for example, have cooling fins.
  • the Keramik redesign- or Rescuekeramik stresses-bottom is then facing the heat sink top, between, for example, still the reflection and / or a protective layer may be provided.
  • the invention also relates to a production method.
  • the LED is disposed on the ceramic body and preferably connected directly via a vorste ⁇ starting said compound layer or a so provided on the ceramic body conductor track structure.
  • a top side of the ceramic body vorgese ⁇ hene interconnect structure is only the top side of the ceramic body provided interconnect structure.
  • the conductor track thickness may, for example, at least 20 .mu.m, preferably min ⁇ least 30 ym, more preferably at least 40 ym, Betra ⁇ gene; Maximum thicknesses are eg in this order increasingly preferably at most 70 .mu.m, 60 .mu.m wholesomeswei ⁇ se 50 ym.
  • the conductor track structure preferably has a copper layer, where further preferably a layer system is applied, namely particularly preferably nickel, palladium and gold.
  • the copper layer may for example have a thickness of min ⁇ least 15 ym, in this order with increasing preference at least 25 ym, have 35 ym and 40 ym, where ⁇ with possible limits (independent of), for example at 65 ym, 55 ym and 50 ym lie.
  • the Ni ⁇ ckel Anlagen may have a thickness of at least 2.5 ym, for example, preferably at least 3.5 ym, have; possible upper limits are (independently) included, for example at most 7.5 ym, preferably at most 6.5 ym.
  • the Pal ⁇ ladium Anlagen may for example have a thickness of Minim ⁇ least 50 nm, preferably at least 75 nm, and limits may (independently thereof), are approximately at most 150 nm, preferably at most 125 nm.
  • the gold layer can be about ⁇ a thickness of at least 25 nm, preferably at least 40 nm before ⁇ have, with maximum values (independent of), for example, at most 75 nm, preferably at most 65 nm are.
  • the metallization of the conductor track structure can generally be carried out, for example, by sputtering, vapor deposition, spraying, melting or flame spraying; However, the conductor track structure is preferably deposited in a bath, de-energized and / or electro-galvanic. In a preferred embodiment, a metallic Refle ⁇ xions slaughter is not placed in the same process step introduced ⁇ , but the wiring pattern and then the metal layer (or vice versa) is first applied. Be ⁇ particularly preferably, the process steps also differ in their nature, so find different Aufbrin ⁇ tion method application.
  • the reflective layer can be applied, for example, by means of physical and / or chemical deposition methods, such as by printing, doctoring, dispensing, lithographic structuring, abrasive structuring ( ⁇ -sandblasting), jetting, stamping, spraying (on previously applied adhesive); also a direct application is possible, which results in the connection due to a kinetic acceleration of the particles.
  • a metallic reflection layer is sputtered, which is particularly preferably carried out in combination with a (before or after) electroless / electrogalvanically deposited interconnect structure.
  • the area occupation by the conductor track structure is preferably smaller by a multiple than that by the reflection ⁇ ons slaughter, which is why the influence on the warping
  • FIG. 1 shows a section of an LED module according to the invention in a schematic Thomasdarstel ⁇ ment
  • Fig. 2 shows the ceramic body of an LED module according to the invention with a lower reflection layer in a sectional oblique view.
  • Fig. 1 shows a section of an LED module according to the invention, namely an LED 1, which is mounted on a ceramic body 2.
  • the LED 1 emits light with a Lambertian radiation characteristic on a top side light emission surface 3.
  • a centroid ray 4 is formed as a centroid of the Lambertian beam.
  • FIG. 1 the propagation of light along a beam 5 of the beam is exemplarily illustrated.
  • the light emitted at the light emission surface 3 along the beam 5 is reflected back in part at a downstream interface, namely the transition between an optically denser potting material 6 and the ambient air.
  • the backscatter light is on the other hand with a directional component to the heavy ⁇ spot beam 4 opposite reflected back to the top surface 7 of the ceramic body. 2
  • This light propagation path is of course only one example of the occurrence of backscatter light.
  • the invention can for example, by reflection or scattering ⁇ processes within the potting material 6, such as to be closed ⁇ particles or cavities, backscattered light arising. Its formation in detail is also of subordinate interest in the present case; However, the invention relates to the handling of the backscatter light.
  • the ceramic body 2 is provided such that a majority of the backscattering light incident on the ceramic body top 7 faces the opposite ceramic body. per-sub 8 is transmitted, about at least 90% of it.
  • the ceramic body comprising Al 2 O 3 with egg ⁇ nem refractive index of about 1.7 is provided and the corresponding ⁇ the light during the transition from the Vergussmate- rial 6 broken (silicone having a refractive index of 1.4) to the surface normal way , This is preferred;
  • the ratio of the refractive indices could be reversed, however, so a part of the backscattered light are inflected totalre- already on the ceramic body top 7 (and would be the transmission portion ent ⁇ speaking lower).
  • the majority is transmitted to the opposite ceramic body underside 8.
  • no special ceramic is provided from an already transparent per se ceramic material, but is the ceramic body 2 of Al 2 O 3 according to thin.
  • the thickness taken along the center of gravity beam 4 is around 200 ⁇ m and is constant over the ceramic body 2.
  • FIG. 1 shows only a partial area of the total ceramic body with the ceramic body 2; the latter is shown in Fig. 2 in a marnit ⁇ tenen oblique view.
  • the Intelkeramik- body has a constant thickness and is designed as a simple rectangular plate.
  • the transmitted to the ceramic-body underside 8 of light would emerge there (possibly from a Totalre ⁇ flexion at shallow angles of incidence apart).
  • the ceramic body underside 8 is gelt, with a silver layer 9 with a thickness of about 200 nm.
  • the transmitted to the ceramic body bottom 8 backscatter light is reflected at it, so then has a direction component in the direction of the centroid beam 4. It therefore propagates to Keramikkör ⁇ per top 7, to exit after a transition into the Vergussma ⁇ material 6 at the top 10 and a Be ⁇ lighting application available.
  • each partial loss of light at the interfaces for example, by total reflection in the case of shallow angle, but the light output is increased ⁇ total.
  • the silver layer 9 is part of a multilayer system. It is therefore applied to a Zr0 2 layer which has been deposited as a bonding agent directly on the ceramic body bottom 8 and has a thickness of a few nanometers. Further, a Schutz Mrssys ⁇ system is on the silver layer 9 is applied, that is provided on the underside thereof, and that a titanium layer having a thickness of 50 nm on the silver layer 9 and a NIV having a thickness of 150 nm on the titanium layer. The additional layers are not shown for clarity.
  • FIG. 2 shows the total ceramic body 21 in a sectional oblique view, looking from obliquely upwards thereon.
  • the silver layer 9 can be seen, which is thus applied as a go ⁇ de layer over a large area in the region below the LEDs. 1
  • the LEDs 1 are arranged, and it is, with the edge of the silver layer 9 in the direction of the center of gravity beam 4 in alignment, circumferentially a dam on the Alterkeramik stresses 21 applied (not shown).
  • This dam defines an upwardly open cavity, which is then filled with the potting material 6, in which the LEDs 1 are then embedded.
  • a printed circuit board structure applied to the entire ceramic body 21 on the front side, with which the LEDs 1 are electrically conductively connected via planar connecting layers and / or bonding wires.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un module DEL pourvu d'une DEL (1) et d'un corps céramique (2) servant de substrat à la DEL (1), le corps céramique (2) étant conçu au moins translucide de façon telle que la lumière rétrodiffusée frappant la face supérieure (7) du corps céramique soit transmise au moins partiellement jusqu'à la face inférieure (8) du corps céramique, et que la majeure partie de la lumière rétrodiffusée transmise jusque là soit ensuite réfléchie pour augmenter le rendement lumineux du module DEL.
PCT/EP2015/052285 2014-02-21 2015-02-04 Del sur corps céramique WO2015124427A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014203191.5A DE102014203191A1 (de) 2014-02-21 2014-02-21 LED-Modul mit einer LED
DE102014203191.5 2014-02-21

Publications (1)

Publication Number Publication Date
WO2015124427A1 true WO2015124427A1 (fr) 2015-08-27

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Citations (4)

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Publication number Priority date Publication date Assignee Title
US20100212942A1 (en) * 2008-02-07 2010-08-26 Wei-Hsing Tuan Fully reflective and highly thermoconductive electronic module and method of manufacturing the same
US20120320601A1 (en) * 2010-05-13 2012-12-20 Panasonic Corporation Mounting substrate and manufacturing method thereof, light-emitting module and illumination device
WO2013065414A1 (fr) * 2011-10-31 2013-05-10 シャープ株式会社 Dispositif émetteur de lumière, dispositif d'éclairage et procédé pour fabriquer un dispositif émetteur de lumière
WO2013179625A1 (fr) * 2012-05-31 2013-12-05 パナソニック株式会社 Module de diode électroluminescente et son procédé de production, dispositif d'éclairage

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Publication number Priority date Publication date Assignee Title
JP5206770B2 (ja) * 2010-02-19 2013-06-12 旭硝子株式会社 発光素子搭載用基板および発光装置
TW201143152A (en) * 2010-03-31 2011-12-01 Asahi Glass Co Ltd Substrate for light-emitting element and light-emitting device employing it
EP2623479B1 (fr) * 2010-09-29 2018-06-27 Kyocera Corporation Substrat céramique pour le montage d'un élément émettant de la lumière et dispositif émettant de la lumière

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100212942A1 (en) * 2008-02-07 2010-08-26 Wei-Hsing Tuan Fully reflective and highly thermoconductive electronic module and method of manufacturing the same
US20120320601A1 (en) * 2010-05-13 2012-12-20 Panasonic Corporation Mounting substrate and manufacturing method thereof, light-emitting module and illumination device
WO2013065414A1 (fr) * 2011-10-31 2013-05-10 シャープ株式会社 Dispositif émetteur de lumière, dispositif d'éclairage et procédé pour fabriquer un dispositif émetteur de lumière
US20150029725A1 (en) * 2011-10-31 2015-01-29 Sharp Kabushiki Kaisha Light emitting device, illuminating device and method of manufacturing light emitting device
WO2013179625A1 (fr) * 2012-05-31 2013-12-05 パナソニック株式会社 Module de diode électroluminescente et son procédé de production, dispositif d'éclairage
EP2819185A1 (fr) * 2012-05-31 2014-12-31 Panasonic Corporation Module de diode électroluminescente et son procédé de production, dispositif d'éclairage

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