WO2015115026A1 - Semiconductor device and semiconductor package - Google Patents

Semiconductor device and semiconductor package Download PDF

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Publication number
WO2015115026A1
WO2015115026A1 PCT/JP2015/000054 JP2015000054W WO2015115026A1 WO 2015115026 A1 WO2015115026 A1 WO 2015115026A1 JP 2015000054 W JP2015000054 W JP 2015000054W WO 2015115026 A1 WO2015115026 A1 WO 2015115026A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
flat portion
lead terminal
semiconductor element
frame
Prior art date
Application number
PCT/JP2015/000054
Other languages
French (fr)
Japanese (ja)
Inventor
耕治 本多
昌哉 立柳
Original Assignee
パナソニックＩｐマネジメント株式会社
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Publication date
Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Publication of WO2015115026A1 publication Critical patent/WO2015115026A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a semiconductor device and a semiconductor package, and more particularly, to a semiconductor device and a semiconductor package that require high output and generate high heat.
  • a first aspect of the semiconductor device includes a flat portion and two side protrusions that are integral with the flat portion and are provided opposite to both ends of the flat portion and project upward from the main surface of the flat portion.
  • a frame having a portion, a lead terminal fixed to an end different from the two side projections of the flat portion, and a semiconductor element mounted on the main surface of the flat portion.
  • the two side convex portions are part of a frame that stands up with respect to the flat portion, and the tapered shape gradually increases in height from the side opposite to the lead terminal toward the lead terminal. It is good also as a structure which has.
  • one of the two side protrusions is configured such that the position of the end opposite to the lead terminal is positioned closer to the semiconductor element than the position of the end on the lead terminal side. It is good.
  • the two side protrusions have a shape in which a portion protruding to the opposite side of the lead terminal of the frame is folded back to the lead terminal side, and from the opposite side of the lead terminal to the lead terminal side. It is good also as a structure which has the taper shape which height becomes high gradually.
  • the two side convex portions are separated by the flat portion of the frame and the slit, and the portion connected to the flat portion at the end opposite to the lead terminal is directed toward the lead terminal side. It is good also as a structure which has the taper shape which is bent and becomes high gradually toward the lead terminal side from the opposite side to a lead terminal.
  • the first aspect of the semiconductor device may further include a metal plating layer provided on the surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
  • the first aspect of the semiconductor device may further include a flat projection provided at a position facing the semiconductor element with the flat portion interposed therebetween.
  • the semiconductor element may be a light emitting diode.
  • the semiconductor element may be a power semiconductor element.
  • the two side convex portions are part of a frame that stands up with respect to the flat portion, and a claw portion and a trunk portion that are separated from each other by a slit. It can be set as the structure which has.
  • the second aspect of the semiconductor device may further include a metal plating layer provided on the surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
  • the second aspect of the semiconductor device may further include a flat projection provided at a position facing the semiconductor element with the flat portion interposed therebetween.
  • the semiconductor element may be a light emitting diode.
  • a frame having a flat portion, a lead terminal fixed to one end of the flat portion of the frame, a semiconductor element mounted on the main surface of the flat portion, and a semiconductor element
  • a mold resin is formed on the flat portion of the frame so as to cover the mold resin, and the mold resin has a tapered shape that gradually increases in height from the side opposite to the lead terminal toward the lead terminal.
  • the semiconductor element may be a power semiconductor element.
  • the third aspect of the semiconductor device may further include a metal plating layer provided on the surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
  • the third aspect of the semiconductor device may further include a plate-like protrusion provided at a position facing the semiconductor element with the flat portion interposed therebetween.
  • a first aspect of the semiconductor package includes the semiconductor device according to the first or third aspect and a holder having an opening that accommodates the semiconductor device, and the holder has a height from the inner bottom surface to the inner upper surface.
  • One opening end side is higher than the second opening end side, and at least a part of the inner upper surface is inclined corresponding to the tapered shape.
  • a second aspect of the semiconductor package includes the semiconductor device according to the second aspect and a holder having an opening that accommodates the semiconductor device, the holder provided on the first opening end side, and an inner side surface being an inner surface.
  • the semiconductor device and the semiconductor package according to the present disclosure can improve heat dissipation while reducing additional members and improving assembly workability.
  • FIG. 1A is a top view of a semiconductor device according to an embodiment.
  • FIG. 1B is a side view of the semiconductor device according to the embodiment.
  • FIG. 1C is a front view of the semiconductor device according to the embodiment as viewed from the front side.
  • FIG. 2 is a perspective view showing a semiconductor device according to an embodiment.
  • FIG. 3A is a cross-sectional view of a holder that houses a semiconductor device according to an embodiment.
  • FIG. 3B is a front view of the holder that houses the semiconductor device according to the embodiment as viewed from the first end face side.
  • FIG. 4 is a cross-sectional view showing a modified example of the holder.
  • FIG. 5A is a top view of a first modification of the semiconductor device.
  • FIG. 5A is a top view of a first modification of the semiconductor device.
  • FIG. 5B is a bottom view of the first modification of the semiconductor device.
  • FIG. 6A is a top view of a second modification of the semiconductor device.
  • FIG. 6B is a side view of a second modification of the semiconductor device.
  • FIG. 6C is a front view of the second modification example of the semiconductor device viewed from the front side.
  • FIG. 7 is a perspective view showing a third modification of the semiconductor device.
  • FIG. 8 is a perspective view showing a fourth modification of the semiconductor device.
  • FIG. 9A is a top view of a fifth modification of the semiconductor device.
  • FIG. 9B is a side view of a fifth modification of the semiconductor device.
  • FIG. 9C is a front view of the fifth modification example of the semiconductor device viewed from the front side.
  • FIG. 10 is a perspective view showing a fifth modification of the semiconductor device.
  • FIG. 11A is a cross-sectional view of a holder that houses a semiconductor device according to a fifth modification.
  • FIG. 11B is a front view of the holder that accommodates the semiconductor device of the fifth modification as viewed from the second end face side.
  • FIG. 11C is a top view of a holder that houses the semiconductor device according to the fifth modification.
  • FIG. 12A is a top view of a sixth modification of the semiconductor device.
  • FIG. 12B is a side view of a sixth modification of the semiconductor device.
  • FIG. 12C is a front view of the sixth modification example of the semiconductor device viewed from the front side.
  • FIG. 13 is a perspective view showing a sixth modification of the semiconductor device.
  • Patent Document 1 positioning of a semiconductor device and crimping of a heat dissipation surface to a holder are performed by simultaneously inserting the semiconductor device and a pressing member into the holder.
  • the planar size of the semiconductor device is about several mm square.
  • the work of simultaneously inserting the pressing member and the semiconductor device having a size equivalent to the holder into the holder is inferior in workability and increases the number of assembling steps.
  • a pressing member that is an additional part is required, resulting in a part cost.
  • Patent Document 2 no additional parts such as a pressing member are required, and workability is better than that in Patent Document 1.
  • the side fin portion of the semiconductor device and the slit inner surface of the holder are in line contact or point contact, and the contact area between the semiconductor device and the holder is small. For this reason, the heat from the semiconductor device cannot be sufficiently transferred to the holder side, and the heat dissipation efficiency is poor.
  • the problem of the present disclosure is to realize a semiconductor device with high heat dissipation while reducing additional members and improving assembly workability.
  • the semiconductor device 110 includes a frame 111 and a semiconductor element 115 mounted on the frame 111.
  • a light emitting diode LED is used as the semiconductor element 115.
  • the frame 111 has a flat portion 112 and two side convex portions 113 provided opposite to both end portions of the flat portion 112.
  • the flat portion 112 has a substantially planar shape, and the side convex portions 113 are provided on two opposing sides of the flat portion 112 and protrude upward from the main surface of the flat portion 112.
  • a lead terminal 114 is fixed to one side of the flat portion 112 where the side convex portion 113 is not provided.
  • the frame 111 having the side convex portion 113 can be formed by pressing a part of a metal plate so as to stand in a direction perpendicular to the main surface.
  • the lead terminal 114 can be formed by pressing the same metal plate as the frame 111. For example, after pressing the metal plate to form the frame 111 and the lead terminal 114 connected to the other part of the metal plate by the bridge portion, the lead terminal 114 and the flat portion 112 are formed by the mold resin 116. Fix and then cut off the bridge. In this way, not only the positioning of the lead terminal 114 can be facilitated, but also insulation of the frame 111 and the lead terminal 114 can be easily ensured.
  • a semiconductor element 115 which is an LED is mounted on the main surface of the flat portion 112.
  • the semiconductor element 115 is mounted with the light exit surface facing away from the flat portion 112. Accordingly, in the semiconductor device 110, light is emitted upward from the flat portion 112.
  • the semiconductor element 115 and the lead terminal 114 are connected by a bonding wire 117.
  • the back surface of the flat portion 112 (the surface opposite to the mounting surface of the semiconductor element 115) is a flat surface. Further, the height h1 from the back surface of the flat portion 112 of the side convex portion 113 on the lead terminal 114 side is higher than the height h2 on the opposite side (front side) to the lead terminal 114, and the side convex portion 113 has the lead terminal 114. It has a tapered shape in which the height gradually decreases from the side toward the front side.
  • the taper angle of the side protrusion 113 is not particularly limited, but is preferably 10 ° or less from the viewpoint of suppressing the thickness of the semiconductor device 110.
  • the side convex portion 113 of the semiconductor device 110 is higher than the topmost portion of the bonding wire 117 even in the lowest portion. For this reason, the side convex portion 113 also functions as a protective portion that prevents an unexpected external force from being applied to the semiconductor element 115 and the bonding wire 117.
  • the semiconductor device 110 is accommodated in a holder 120 as shown in FIGS. 3A and 3B and constitutes a semiconductor package 100.
  • the semiconductor package 100 is attached to a housing of a device to be used.
  • the holder 120 is a rectangular tube having an opening whose opening end has a rectangular planar shape, and the semiconductor device 110 is inserted into the opening. The opening is formed to fit with the frame 111 of the semiconductor device 110. Further, a window portion 129 through which light from the LED is transmitted is provided on the upper surface of the holder 120.
  • the material of the holder 120 is not particularly limited, but a metal such as aluminum, zinc, or magnesium is preferable from the viewpoint of heat dissipation.
  • the inner bottom surface 125 of the holder 120 is a flat surface that comes into contact with the back surface of the flat portion 112.
  • the inner surface 126 of the holder 120 has a shape that matches the side protrusion 113 of the semiconductor device 110. Specifically, the height ha on the first opening end 120a side is higher than the height hb on the second opening end 120b side. Thereby, at least a part of the opening has a tapered shape in which the inner upper surface 127 is inclined, and the inclination of the inner upper surface 127 coincides with the inclination of the side convex portion of the semiconductor device 110.
  • a first portion 121 having a constant height ha from the inner bottom surface 125 to the inner upper surface 127 is provided on the first opening end 120 a side of the holder 120.
  • a tapered second portion 122 whose height gradually decreases from ha to hb is provided on the second opening end 120b side.
  • the taper angle in the second portion 122 matches the taper angle of the side protrusion 113 of the semiconductor device 110.
  • the height ha is equal to or higher than the height h1 on the lead terminal 114 side in the semiconductor device 110, and the height hb at the second opening end 120b is equal to or lower than the height h2 on the front side in the semiconductor device 110.
  • the semiconductor device 110 when the semiconductor device 110 is inserted into the opening from the first opening end 120a side with the front side forward, the height from the inner bottom surface 125 to the inner upper surface 127 of the holder 120 is the height of the side protrusion 113.
  • the semiconductor device 110 and the holder 120 are fitted and fixed at a position corresponding to the height h2. Therefore, positioning in the front-rear direction in the holder 120 of the semiconductor device 110 can be performed. This facilitates the alignment of the semiconductor element 115 that is an LED and the window portion 129.
  • the position of the front end of the semiconductor device 110 is set to the position of the second opening end 120 b of the holder 120.
  • the dimensional difference between the lateral width of the inner bottom surface 125 of the holder 120 and the lateral width of the semiconductor device 110 is 0.05 mm to 0.15 mm so that they can be fitted. For this reason, the semiconductor device 110 can be positioned in the lateral direction.
  • the back surface of the flat portion 112 is pressed against the inner bottom surface 125 of the holder 120 at a position where the side protrusion 113 of the semiconductor device 110 is fitted with the opening of the holder 120. For this reason, the semiconductor device 110 and the holder 120 can be brought into surface contact, and the heat dissipation efficiency is also improved.
  • the semiconductor device 110 is in contact with the holder 120 not only on the bottom surface of the flat portion 112 but also on the side surface and the top surface of the side projection 113, and the heat dissipation is further improved.
  • a metal plating layer made of a metal such as tin (Sn) having a low hardness may be provided on the back surface of the flat portion 112.
  • the plating layer is deformed by the insertion force and pressure contact force when the semiconductor device 110 is inserted into the holder 120. For this reason, it is hard to produce a micro space
  • the semiconductor device 110 can be fitted and fixed by inserting it into the holder 120, the semiconductor device 110 and the holder 120 may be fixed using a heat conductive adhesive. Thereby, the semiconductor device 110 and the holder 120 can be more firmly fixed.
  • a protrusion 128 may be provided in the vicinity of the boundary between the first portion 121 and the second portion 122. By providing the protrusion 128, the rear end portion of the side convex portion 113 of the semiconductor device 110 and the protrusion 128 come into contact with each other, and the protrusion 128 functions as a stopper. Thereby, the semiconductor device 110 can be more securely fixed to the holder 120.
  • the first portion 121 may also be tapered.
  • the height of the lowest portion of the first portion 121 may be made larger than the height h1 of the semiconductor device 110 on the lead terminal 114 side.
  • the taper angle of the first portion 121 may be the same as or different from that of the second portion 122.
  • a heat radiation protrusion 141 may be provided on the back surface of the flat portion 112.
  • the contact pressure between the back surface of the flat portion 112 and the inner bottom surface 125 of the holder 120 can be further increased. For this reason, it is possible to transmit heat from the semiconductor device 110 to the holder 120 more efficiently and dissipate heat.
  • the protrusion 141 is preferably disposed at a position facing the semiconductor element 115 with the flat portion 112 interposed therebetween. In this case, the protrusion 141 overlaps the mounting position of the semiconductor element 115 in plan view.
  • the planar size of the protrusion 141 is preferably the same as or larger than that of the semiconductor element 115. From the viewpoint of increasing the contact pressure on the back side of the mounting position of the semiconductor element 115, the planar size of the protrusion 141 is preferably smaller than the size of the back surface of the flat portion 112. The thicker the protrusion 141, the higher the contact pressure.
  • the thickness is preferably about 0.05 mm to 0.1 mm.
  • the surface of the protrusion 141 is preferably as flat as possible.
  • the material of the protrusion 141 is not particularly limited, a metal such as copper having high thermal conductivity can be used.
  • the width of the flat portion 112 may be changed as shown in FIGS. 6A to 6C. 6A to 6C, the flat portion 112 has a right trapezoidal shape with a narrower width on the front side than the lead terminal 114 side. For this reason, one side convex part 113a of the two side convex parts 113 is inclined with respect to the side where the side convex part 113 of the frame 111 is not provided. Therefore, the one side convex portion 113a is positioned closer to the semiconductor element 115 than the position of the end portion on the lead terminal 114 side at the front end portion.
  • the semiconductor device 110 can be easily inserted into the opening of the holder 120. If the width on the lead terminal 114 side is the same as or slightly wider than the width of the opening of the holder 120, the width of the flat portion 112 gradually increases as the holder 120 is inserted. Thereby, the side surface of the side projection 113 is gradually pressed against the inner surface 126 of the holder 120 with a large force. For this reason, the semiconductor device 110 is fixed in the holder 120 with a strong force. Therefore, the thermal resistance between the semiconductor device 110 and the holder 120 can be further reduced. In addition, the horizontal positioning in the holder 120 of the semiconductor device 110 is facilitated.
  • the inclination of the one side protrusion 113a is preferably 10 ° or less with respect to the direction orthogonal to the side where the side protrusion 113 is not provided.
  • the entire side convex portion 113a is inclined with respect to the side where the side convex portion 113 is not provided. However, only the portion on the front side of the one side convex portion 113a is provided with the side convex portion 113. It is good also as a structure inclined with respect to the edge
  • a configuration in which both side convex portions 113 are inclined may be employed.
  • the flat portion 112 may be an isosceles trapezoidal shape, and the inclination of the two side convex portions 113 may be the same.
  • the inclinations of the two side convex portions 113 may be different from each other.
  • the inner side surface 126 of the holder 120 is inclined according to the inclination of the side protrusions 113. Good.
  • a metal plating layer can be provided on the back surface of the flat portion 112, and the heat radiation projection 141 can be provided.
  • the side protrusion 113 ⁇ / b> A may be formed by folding back a portion protruding to the front side of the frame 111 to the lead terminal 114 side. Since the side protrusion 113A also functions as a spring, the semiconductor device 110 and the holder 120 can be more effectively fixed.
  • the portion separated from the flat portion 112 and the slit on the frame 111 and connected to the flat portion 112 on the front side has a height from the main surface of the flat portion toward the lead terminal 114 side.
  • the area of the frame 111 necessary for forming the semiconductor device 110 is reduced, and the arrangement pitch dimension can be reduced. Therefore, the utilization efficiency of the material for forming the frame 111 is improved and the cost can be reduced. Further, since the number of work steps is reduced as compared with the case where the end portion of the frame 111 is bent so as to stand up with respect to the main surface, the cost can be reduced.
  • the metal plating layer can be provided on the back surface of the flat portion 112, and the heat radiation protrusion 141 can be provided. Further, a part of the planar shape of the flat portion 112 may be trapezoidal.
  • the semiconductor device having the tapered shape in which the height of the side convex portion gradually increases from the front side toward the lead terminal 114 side has been described, the tapered shape in which the height gradually decreases from the front side toward the lead terminal 114 side. It is good.
  • the semiconductor device may be fixed to the holder by the side convex portion having a constant height.
  • the semiconductor device 110A has a side protrusion 113C having a constant height.
  • the side protrusion 113C includes a claw portion 118 provided on the front side, and a body portion 119 separated by the claw portion 118 and a slit.
  • the opening portion of the holder 130 has an inner side surface 136A inclined in a tapered shape so that the first portion 131 provided on the first opening end 130a side gradually becomes narrower from the inner bottom surface 135 side toward the inner upper surface 137 side. It has a trapezoidal cross section.
  • the inner side surface 136 ⁇ / b> B of the second portion 132 provided on the second opening end 130 b side is perpendicular to the inner bottom surface 135.
  • the depth of the second portion 132 substantially matches the width of the claw portion 118 of the semiconductor device 110.
  • the side protrusion 113C of the semiconductor device 110A is formed by the inner side surface 136A of the first portion 131 that is a tapered surface. Deformation toward the semiconductor element 115 side. Thereby, a repulsive force is generated, and the semiconductor device 110 ⁇ / b> A is pressed against the inner bottom surface side of the holder 130. Further, when the semiconductor device 110A is inserted and the claw portion 118 reaches the second portion 132 of the opening, the claw portion 118 is released from the pressurization by the tapered surface, and thus spreads outward. As a result, the claw portion 118 prevents the semiconductor device 110A from coming off. Therefore, the semiconductor device 110A can be securely fixed to the holder 130 without using an adhesive or the like.
  • a metal plating layer can be provided on the bottom surface of the flat portion 112, and a projection 141 for heat dissipation can be provided. Further, a part of the planar shape of the flat portion 112 may be trapezoidal.
  • a slit is provided in a side convex portion having a constant height
  • a configuration may be adopted in which a slit is provided in a tapered side convex portion whose height changes and a claw portion and a trunk portion are provided.
  • the semiconductor element 115 is an LED that does not have a resonator and emits low-coherence light.
  • the present invention is not limited to LEDs, and may be a super luminescent diode that has a resonator and emits low-coherence light, or a laser diode that has a resonator and emits high-coherence light.
  • the semiconductor element 115 is not limited to a semiconductor light emitting element, and may be a power semiconductor element such as a switching element.
  • the mold resin 116 can cover not only the lead terminal 114 but also the semiconductor element 115 and the bonding wire 117. Thereby, the semiconductor element 115 and the bonding wire 117 can be protected by the mold resin 116.
  • the semiconductor element 115 is a power semiconductor element, it is not necessary to provide a window in the holder.
  • the configuration shown in FIGS. 12A to 12C and FIG. 13 may be used.
  • the frame 111 does not have a side protrusion
  • the mold resin 116 ⁇ / b> A covers the semiconductor element 115 and the bonding wire 117.
  • the mold resin 116A has a tapered shape in which the height h3 on the lead terminal 114 side is higher than the height h4 on the front side, and the height gradually decreases from the lead terminal 114 side toward the front side.
  • the semiconductor device 110B can be inserted into the opening of the holder 120 in the same manner as the semiconductor device having the side protrusions. However, it is not necessary to provide the window part 129 in the holder 120.
  • the height h3 on the lead terminal 114 side and the height h4 on the front side of the mold resin 116A are set similarly to the height h1 on the lead terminal 114 side and the height h2 on the front side of the side protrusion 113 in the semiconductor device 110. be able to.
  • the back surface of the flat portion of the frame 111 is pressed against the inner bottom surface 125 of the holder 120.
  • the semiconductor device 110B and the holder 120 can be brought into surface contact, and the heat dissipation efficiency is also improved.
  • the semiconductor device 110B is in contact with the holder 120 not only on the bottom surface of the flat portion of the frame 111 but also on the side surface and the top surface of the mold resin 116A, and the heat dissipation is further improved.
  • a metal plating layer can be provided on the bottom surface of the flat portion of the frame 111, and a heat radiation projection 141 can be provided.
  • a part of the planar shape of the flat portion of the frame 111 may be trapezoidal.
  • a close contact state can be realized by the contact force generated by the fitting between the holder and the semiconductor device.
  • contact thermal resistance falls and heat dissipation improves. Therefore, even in a lead frame type package shape, it is possible to use a high-power semiconductor element that generates a large amount of heat.
  • this effect can be realized only by the shape of the semiconductor device and the holder corresponding thereto, the cost can be reduced and the assembly workability can be facilitated.
  • the semiconductor device and the semiconductor package according to the present disclosure can realize a semiconductor device with high heat dissipation while reducing the number of additional members and improving the assembly workability, and particularly high output such as a light source for a motion sensor is required, and high heat generation. It is useful as a semiconductor light-emitting device and a semiconductor light-emitting element package accompanying the above.

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Abstract

To provide a semiconductor device having high heat dissipation performance, while reducing additional members and improving assembly workability. This semiconductor device is provided with a frame (111), a lead terminal (114), and a semiconductor element (115). The frame (111) has a flat section (112), and two side protruding sections (113), which are integrated with the flat section (112), and which are provided at both the end sections of the flat section (112) to face each other, said side protruding sections protruding from a main surface of the flat section (112). The lead terminal (114) is fixed at an end section of the flat section (112), said end section being different from the end sections that are provided with the two side protruding sections (113). The semiconductor element (115) is mounted on the main surface of the flat section (112).

Description

半導体装置及び半導体パッケージSemiconductor device and semiconductor package
　本発明は、半導体装置及び半導体パッケージに関し、特に、高出力が求められ、高発熱を伴う半導体装置及び半導体パッケージに関する。 The present invention relates to a semiconductor device and a semiconductor package, and more particularly, to a semiconductor device and a semiconductor package that require high output and generate high heat.
　近年、照明器具や家電製品の発光源への発光ダイオード装置の利用及び光ディスク以外の分野への半導体レーザ装置の展開等が行われており、光半導体装置の高出力化が進められている。また、電気自動車等の高出力電源用の半導体スイッチング装置をはじめとする高出力のパワー半導体装置が求められている。 In recent years, the use of light-emitting diode devices as light sources for lighting fixtures and home appliances and the development of semiconductor laser devices in fields other than optical disks have been carried out, and the output of optical semiconductor devices has been increased. There is also a need for high-power power semiconductor devices such as semiconductor switching devices for high-output power supplies such as electric vehicles.
　このような高出力の半導体装置を実現するためには、発熱による効率低下及び特性劣化を抑えることが重要である。このため、半導体装置から発生する熱を効率良く排熱する構造が求められている。その一方で、半導体装置の製造コストを抑え、より広い適用範囲及び汎用性を実現できる構造が求められている。このため、放熱性と製造コストの抑制とを両立する構造が検討されている（例えば、特許文献１及び２を参照）。 In order to realize such a high-output semiconductor device, it is important to suppress efficiency reduction and characteristic deterioration due to heat generation. For this reason, a structure for efficiently exhausting heat generated from a semiconductor device is required. On the other hand, there is a demand for a structure that can reduce the manufacturing cost of a semiconductor device and realize a wider application range and versatility. For this reason, the structure which balances heat dissipation and suppression of manufacturing cost is examined (for example, refer patent documents 1 and 2).
特開２００７－２７３７６号公報JP 2007-27376 A 特開平１０－８３５６４号公報JP-A-10-83564
　本開示に係る半導体装置の第１の態様は、平坦部と、平坦部と一体であり平坦部の両端部に相対して設けられ、平坦部の主面よりも上方に突出した２つの側凸部とを有するフレームと、平坦部の２つの側凸部とは異なる端部に固定されたリード端子と、平坦部の主面上に搭載された半導体素子とを備える。 A first aspect of the semiconductor device according to the present disclosure includes a flat portion and two side protrusions that are integral with the flat portion and are provided opposite to both ends of the flat portion and project upward from the main surface of the flat portion. A frame having a portion, a lead terminal fixed to an end different from the two side projections of the flat portion, and a semiconductor element mounted on the main surface of the flat portion.
　半導体装置の第１の態様において、２つの側凸部は、平坦部に対して起立するフレームの一部であり、リード端子と反対側からリード端子側へ向かって次第に高さが高くなるテーパ形状を有している構成としてもよい。 In the first aspect of the semiconductor device, the two side convex portions are part of a frame that stands up with respect to the flat portion, and the tapered shape gradually increases in height from the side opposite to the lead terminal toward the lead terminal. It is good also as a structure which has.
　半導体装置の第１の態様において、２つの側凸部のうちの一方は、リード端子と反対側の端部の位置が、リード端子側の端部の位置よりも、半導体素子側に位置する構成としてもよい。 In the first aspect of the semiconductor device, one of the two side protrusions is configured such that the position of the end opposite to the lead terminal is positioned closer to the semiconductor element than the position of the end on the lead terminal side. It is good.
　半導体装置の第１の態様において、２つの側凸部は、フレームのリード端子と反対側に突出した部分が、リード端子側に折り返された形状であり、リード端子と反対側からリード端子側へ向かって次第に高さが高くなるテーパ形状を有している構成としてもよい。 In the first aspect of the semiconductor device, the two side protrusions have a shape in which a portion protruding to the opposite side of the lead terminal of the frame is folded back to the lead terminal side, and from the opposite side of the lead terminal to the lead terminal side. It is good also as a structure which has the taper shape which height becomes high gradually.
　半導体装置の第１の態様において、２つの側凸部は、フレームの平坦部とスリットにより分離され且つリード端子と反対側の端部において平坦部と接続された部分が、リード端子側に向かって折り曲げられ、リード端子と反対側からリード端子側に向かって次第に高さが高くなるテーパ形状を有している構成としてもよい。 In the first aspect of the semiconductor device, the two side convex portions are separated by the flat portion of the frame and the slit, and the portion connected to the flat portion at the end opposite to the lead terminal is directed toward the lead terminal side. It is good also as a structure which has the taper shape which is bent and becomes high gradually toward the lead terminal side from the opposite side to a lead terminal.
　半導体装置の第１の態様は、平坦部の主面と反対側の面に設けられ、フレームよりも硬度が低い金属メッキ層をさらに備えていてもよい。 The first aspect of the semiconductor device may further include a metal plating layer provided on the surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
　半導体装置の第１の態様は、平坦部を挟んで半導体素子と対向する位置に設けられた、平板状の突起部をさらに備えていてもよい。 The first aspect of the semiconductor device may further include a flat projection provided at a position facing the semiconductor element with the flat portion interposed therebetween.
　半導体装置の第１の態様において、半導体素子は発光ダイオードとすることができる。 In the first aspect of the semiconductor device, the semiconductor element may be a light emitting diode.
　半導体装置の第１の態様において、半導体素子はパワー半導体素子とすることができる。 In the first aspect of the semiconductor device, the semiconductor element may be a power semiconductor element.
　半導体装置の第２の態様は、第１の態様の半導体装置において、２つの側凸部は、平坦部に対して起立するフレームの一部であり、スリットにより互いに分離された爪部と胴部とを有している構成とすることができる。 According to a second aspect of the semiconductor device, in the semiconductor device according to the first aspect, the two side convex portions are part of a frame that stands up with respect to the flat portion, and a claw portion and a trunk portion that are separated from each other by a slit. It can be set as the structure which has.
　半導体装置の第２の態様は、平坦部の主面と反対側の面に設けられ、フレームよりも硬度が低い金属メッキ層をさらに備えていてもよい。 The second aspect of the semiconductor device may further include a metal plating layer provided on the surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
　半導体装置の第２の態様は、平坦部を挟んで半導体素子と対向する位置に設けられた、平板状の突起部をさらに備えていてもよい。 The second aspect of the semiconductor device may further include a flat projection provided at a position facing the semiconductor element with the flat portion interposed therebetween.
　半導体装置の第２の態様において、半導体素子は発光ダイオードとすることができる。 In the second aspect of the semiconductor device, the semiconductor element may be a light emitting diode.
　半導体装置の第２の態様において、半導体素子はパワー半導体素子とすることができる。 In the second aspect of the semiconductor device, the semiconductor element can be a power semiconductor element.
　半導体装置の第３の態様は、平坦部を有するフレームと、フレームの平坦部の一の端部に固定されたリード端子と、平坦部の主面上に搭載された半導体素子と、半導体素子を覆うようにフレームの平坦部上に形成されたモールド樹脂を備え、モールド樹脂は、リード端子と反対側からリード端子側に向かって次第に高さが高くなるテーパ形状を有している。 According to a third aspect of the semiconductor device, a frame having a flat portion, a lead terminal fixed to one end of the flat portion of the frame, a semiconductor element mounted on the main surface of the flat portion, and a semiconductor element A mold resin is formed on the flat portion of the frame so as to cover the mold resin, and the mold resin has a tapered shape that gradually increases in height from the side opposite to the lead terminal toward the lead terminal.
　半導体装置の第３の態様において、半導体素子はパワー半導体素子とすることができる。 In the third aspect of the semiconductor device, the semiconductor element may be a power semiconductor element.
　半導体装置の第３の態様は、平坦部の主面と反対側の面に設けられ、フレームよりも硬度が低い金属メッキ層をさらに備えていてもよい。 The third aspect of the semiconductor device may further include a metal plating layer provided on the surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
　半導体装置の第３の態様は、平坦部を挟んで半導体素子と対向する位置に設けられた、平板状の突起部をさらに備えていてもよい。 The third aspect of the semiconductor device may further include a plate-like protrusion provided at a position facing the semiconductor element with the flat portion interposed therebetween.
　半導体パッケージの第１の態様は、第１又は第３の態様の半導体装置と、半導体装置を収納する、開口部を有するホルダとを備え、ホルダは、内底面から内上面までの高さが第１の開口端側において第２の開口端側よりも高く、内上面の少なくとも一部がテーパ形状に対応して傾斜している。 A first aspect of the semiconductor package includes the semiconductor device according to the first or third aspect and a holder having an opening that accommodates the semiconductor device, and the holder has a height from the inner bottom surface to the inner upper surface. One opening end side is higher than the second opening end side, and at least a part of the inner upper surface is inclined corresponding to the tapered shape.
　半導体パッケージの第２の態様は、第２の態様の半導体装置と、半導体装置を収納する、開口部を有するホルダとを備え、ホルダは、第１の開口端側に設けられ、内側面が内底面側から内上面側に向かって次第に狭くなるように傾斜した第１の部分と、第２の開口端側に設けられ、内側面の傾斜が第１の部分よりも小さい第２の部分とを有している。 A second aspect of the semiconductor package includes the semiconductor device according to the second aspect and a holder having an opening that accommodates the semiconductor device, the holder provided on the first opening end side, and an inner side surface being an inner surface. A first portion that is inclined so as to become gradually narrower from the bottom surface side toward the inner upper surface side, and a second portion that is provided on the second opening end side and whose inner surface has a smaller inclination than the first portion. Have.
　本開示に係る半導体装置及び半導体パッケージは、追加部材の削減及び組立作業性の向上を図りながら放熱性を向上できる。 The semiconductor device and the semiconductor package according to the present disclosure can improve heat dissipation while reducing additional members and improving assembly workability.
図１Ａは、一実施形態に係る半導体装置の上面図である。FIG. 1A is a top view of a semiconductor device according to an embodiment. 図１Ｂは、一実施形態に係る半導体装置の側面図である。FIG. 1B is a side view of the semiconductor device according to the embodiment. 図１Ｃは、一実施形態に係る半導体装置の前方側から見た正面図である。FIG. 1C is a front view of the semiconductor device according to the embodiment as viewed from the front side. 図２は、一実施形態に係る半導体装置を示す斜視図である。FIG. 2 is a perspective view showing a semiconductor device according to an embodiment. 図３Ａは、一実施形態に係る半導体装置を収容するホルダの断面図である。FIG. 3A is a cross-sectional view of a holder that houses a semiconductor device according to an embodiment. 図３Ｂは、一実施形態に係る半導体装置を収容するホルダの第１の端面側から見た正面図である。FIG. 3B is a front view of the holder that houses the semiconductor device according to the embodiment as viewed from the first end face side. 図４は、ホルダの変形例を示す断面図である。FIG. 4 is a cross-sectional view showing a modified example of the holder. 図５Ａは、半導体装置の第１変形例の上面図である。FIG. 5A is a top view of a first modification of the semiconductor device. 図５Ｂは、半導体装置の第１変形例の底面図である。FIG. 5B is a bottom view of the first modification of the semiconductor device. 図６Ａは、半導体装置の第２変形例の上面図である。FIG. 6A is a top view of a second modification of the semiconductor device. 図６Ｂは、半導体装置の第２変形例の側面図である。FIG. 6B is a side view of a second modification of the semiconductor device. 図６Ｃは、半導体装置の第２変形例の前方側から見た正面図である。FIG. 6C is a front view of the second modification example of the semiconductor device viewed from the front side. 図７は、半導体装置の第３変形例を示す斜視図である。FIG. 7 is a perspective view showing a third modification of the semiconductor device. 図８は、半導体装置の第４変形例を示す斜視図である。FIG. 8 is a perspective view showing a fourth modification of the semiconductor device. 図９Ａは、半導体装置の第５変形例の上面図である。FIG. 9A is a top view of a fifth modification of the semiconductor device. 図９Ｂは、半導体装置の第５変形例の側面図である。FIG. 9B is a side view of a fifth modification of the semiconductor device. 図９Ｃは、半導体装置の第５変形例の前方側から見た正面図である。FIG. 9C is a front view of the fifth modification example of the semiconductor device viewed from the front side. 図１０は、半導体装置の第５変形例を示す斜視図である。FIG. 10 is a perspective view showing a fifth modification of the semiconductor device. 図１１Ａは、第５変形例の半導体装置を収容するホルダの断面図である。FIG. 11A is a cross-sectional view of a holder that houses a semiconductor device according to a fifth modification. 図１１Ｂは、第５変形例の半導体装置を収容するホルダの第２の端面側から見た正面図である。FIG. 11B is a front view of the holder that accommodates the semiconductor device of the fifth modification as viewed from the second end face side. 図１１Ｃは、第５変形例の半導体装置を収容するホルダの上面図である。FIG. 11C is a top view of a holder that houses the semiconductor device according to the fifth modification. 図１２Ａは、半導体装置の第６変形例の上面図である。FIG. 12A is a top view of a sixth modification of the semiconductor device. 図１２Ｂは、半導体装置の第６変形例の側面図である。FIG. 12B is a side view of a sixth modification of the semiconductor device. 図１２Ｃは、半導体装置の第６変形例の前方側から見た正面図である。FIG. 12C is a front view of the sixth modification example of the semiconductor device viewed from the front side. 図１３は、半導体装置の第６変形例を示す斜視図である。FIG. 13 is a perspective view showing a sixth modification of the semiconductor device.
　まず、従来技術における課題について述べる。 First, issues related to the prior art will be described.
　先行技術文献に記載された手法には、以下のような問題がある。例えば、特許文献１では、半導体装置の位置決め及び放熱面のホルダへの圧着を半導体装置と押さえ部材とを同時にホルダに挿入することにより行っている。しかし、半導体装置の平面サイズは、数ｍｍ角程である。このため、それに準じたサイズである押さえ部材と半導体装置とを同時にホルダに挿入する作業は作業性が悪く、組立工数が増大する。また、追加部品である押さえ部材が必要であり、部品コストが発生する。 The methods described in the prior art documents have the following problems. For example, in Patent Document 1, positioning of a semiconductor device and crimping of a heat dissipation surface to a holder are performed by simultaneously inserting the semiconductor device and a pressing member into the holder. However, the planar size of the semiconductor device is about several mm square. For this reason, the work of simultaneously inserting the pressing member and the semiconductor device having a size equivalent to the holder into the holder is inferior in workability and increases the number of assembling steps. In addition, a pressing member that is an additional part is required, resulting in a part cost.
　特許文献２では、押さえ部材などの追加部品が必要なく、特許文献１と比べ作業性もよい。しかし、半導体装置の側面フィン部とホルダのスリット内面とは線接触又は点接触であり、半導体装置とホルダとの接触面積が小さい。このため、半導体装置からの熱をホルダ側に十分に伝えることができず、放熱効率が悪い。 In Patent Document 2, no additional parts such as a pressing member are required, and workability is better than that in Patent Document 1. However, the side fin portion of the semiconductor device and the slit inner surface of the holder are in line contact or point contact, and the contact area between the semiconductor device and the holder is small. For this reason, the heat from the semiconductor device cannot be sufficiently transferred to the holder side, and the heat dissipation efficiency is poor.
　本開示の課題は、追加部材の削減及び組立作業性の向上を図りながら放熱性が高い半導体装置を実現することである。 The problem of the present disclosure is to realize a semiconductor device with high heat dissipation while reducing additional members and improving assembly workability.
　以下、本開示の実施形態に係る半導体装置について、図面を参照しながら詳細に説明する。 Hereinafter, a semiconductor device according to an embodiment of the present disclosure will be described in detail with reference to the drawings.
　一実施形態に係る半導体装置の構成について、図１Ａ～図１Ｃ及び図２を用いて説明する。図１Ａ、図１Ｂ、図１Ｃ及び図２に示すように半導体装置１１０は、フレーム１１１とフレーム１１１に搭載された半導体素子１１５とを備えている。本実施形態においては、半導体素子１１５として発光ダイオード（ＬＥＤ）を用いている。 A configuration of a semiconductor device according to an embodiment will be described with reference to FIGS. 1A to 1C and FIG. As shown in FIGS. 1A, 1B, 1C, and 2, the semiconductor device 110 includes a frame 111 and a semiconductor element 115 mounted on the frame 111. In the present embodiment, a light emitting diode (LED) is used as the semiconductor element 115.
　フレーム１１１は、平坦部１１２と、平坦部１１２の両端部に相対して設けられた２つの側凸部１１３とを有している。本実施形態において平坦部１１２は平面略方形状であり、側凸部１１３は、平坦部１１２の相対する２辺に設けられ、平坦部１１２の主面から上方に突出している。平坦部１１２の側凸部１１３が設けられていない辺の一方には、リード端子１１４が固定されている。 The frame 111 has a flat portion 112 and two side convex portions 113 provided opposite to both end portions of the flat portion 112. In the present embodiment, the flat portion 112 has a substantially planar shape, and the side convex portions 113 are provided on two opposing sides of the flat portion 112 and protrude upward from the main surface of the flat portion 112. A lead terminal 114 is fixed to one side of the flat portion 112 where the side convex portion 113 is not provided.
　側凸部１１３を有するフレーム１１１は、金属板の一部を主面に対して直角方向に起立するようにプレス加工することにより形成できる。リード端子１１４は、フレーム１１１と同じ金属板をプレス加工して形成することができる。例えば、金属板をプレス加工して、フレーム１１１及びリード端子１１４が金属板の他の部分とブリッジ部により接続されている状態に形成した後、モールド樹脂１１６によりリード端子１１４と平坦部１１２とを固定し、その後ブリッジ部を切り離せばよい。このようにすれば、リード端子１１４の位置決めが容易にできるだけでなく、フレーム１１１とリード端子１１４との絶縁性の確保も容易である。 The frame 111 having the side convex portion 113 can be formed by pressing a part of a metal plate so as to stand in a direction perpendicular to the main surface. The lead terminal 114 can be formed by pressing the same metal plate as the frame 111. For example, after pressing the metal plate to form the frame 111 and the lead terminal 114 connected to the other part of the metal plate by the bridge portion, the lead terminal 114 and the flat portion 112 are formed by the mold resin 116. Fix and then cut off the bridge. In this way, not only the positioning of the lead terminal 114 can be facilitated, but also insulation of the frame 111 and the lead terminal 114 can be easily ensured.
　平坦部１１２の主面上には、ＬＥＤである半導体素子１１５が搭載されている。半導体素子１１５は、光出射面を平坦部１１２と反対側に向けて搭載されている。従って、半導体装置１１０においては、平坦部１１２から上方に向けて光が出射される。半導体素子１１５とリード端子１１４とは、ボンディングワイヤ１１７により接続されている。 A semiconductor element 115 which is an LED is mounted on the main surface of the flat portion 112. The semiconductor element 115 is mounted with the light exit surface facing away from the flat portion 112. Accordingly, in the semiconductor device 110, light is emitted upward from the flat portion 112. The semiconductor element 115 and the lead terminal 114 are connected by a bonding wire 117.
　本実施形態の半導体装置１１０において、平坦部１１２の裏面（半導体素子１１５の搭載面と反対側の面）は平坦面となっている。また、リード端子１１４側における側凸部１１３の平坦部１１２の裏面からの高さｈ１が、リード端子１１４と反対側（前方側）における高さｈ２よりも高く、側凸部１１３はリード端子１１４側から前方側へ向かって高さが次第に低くなるテーパ形状となっている。側凸部１１３のテーパ角度は、特に限定されないが、半導体装置１１０の厚さを抑える観点から１０°以下とすることが好ましい。 In the semiconductor device 110 of this embodiment, the back surface of the flat portion 112 (the surface opposite to the mounting surface of the semiconductor element 115) is a flat surface. Further, the height h1 from the back surface of the flat portion 112 of the side convex portion 113 on the lead terminal 114 side is higher than the height h2 on the opposite side (front side) to the lead terminal 114, and the side convex portion 113 has the lead terminal 114. It has a tapered shape in which the height gradually decreases from the side toward the front side. The taper angle of the side protrusion 113 is not particularly limited, but is preferably 10 ° or less from the viewpoint of suppressing the thickness of the semiconductor device 110.
　半導体装置１１０の側凸部１１３は、最も低い部分においても、ボンディングワイヤ１１７の最頂部よりも高い。このため、側凸部１１３は、半導体素子１１５及びボンディングワイヤ１１７に不測の外力が加わることを防止する、保護部としても機能する。 The side convex portion 113 of the semiconductor device 110 is higher than the topmost portion of the bonding wire 117 even in the lowest portion. For this reason, the side convex portion 113 also functions as a protective portion that prevents an unexpected external force from being applied to the semiconductor element 115 and the bonding wire 117.
　本実施形態の半導体装置１１０は、図３Ａ及び図３Ｂに示すようなホルダ１２０に収容され、半導体パッケージ１００を構成する。半導体パッケージ１００は、使用する機器の筐体に取り付けられる。ホルダ１２０は開口端の平面形状が長方形状である開口部を有する角管状であり、半導体装置１１０は開口部に挿入される。開口部は、半導体装置１１０のフレーム１１１と嵌合するように形成されている。また、ホルダ１２０の上面には、ＬＥＤからの光が透過する窓部１２９が設けられている。ホルダ１２０の材質は特に限定されないが、放熱性の観点からアルミニウム、亜鉛、又はマグネシウム等の金属が好ましい。 The semiconductor device 110 according to the present embodiment is accommodated in a holder 120 as shown in FIGS. 3A and 3B and constitutes a semiconductor package 100. The semiconductor package 100 is attached to a housing of a device to be used. The holder 120 is a rectangular tube having an opening whose opening end has a rectangular planar shape, and the semiconductor device 110 is inserted into the opening. The opening is formed to fit with the frame 111 of the semiconductor device 110. Further, a window portion 129 through which light from the LED is transmitted is provided on the upper surface of the holder 120. The material of the holder 120 is not particularly limited, but a metal such as aluminum, zinc, or magnesium is preferable from the viewpoint of heat dissipation.
　ホルダ１２０の内底面１２５は、平坦部１１２の裏面と当接する平面となっている。ホルダ１２０の内側面１２６は、半導体装置１１０の側凸部１１３と一致する形状となっている。具体的には、第１の開口端１２０ａ側における高さｈａが第２の開口端１２０ｂ側における高さｈｂよりも高くなっている。これにより、開口部の少なくとも一部は内上面１２７が傾斜したテーパ状となっており、内上面１２７の傾斜は半導体装置１１０の側凸部の傾斜と一致している。 The inner bottom surface 125 of the holder 120 is a flat surface that comes into contact with the back surface of the flat portion 112. The inner surface 126 of the holder 120 has a shape that matches the side protrusion 113 of the semiconductor device 110. Specifically, the height ha on the first opening end 120a side is higher than the height hb on the second opening end 120b side. Thereby, at least a part of the opening has a tapered shape in which the inner upper surface 127 is inclined, and the inclination of the inner upper surface 127 coincides with the inclination of the side convex portion of the semiconductor device 110.
　本実施形態においては、ホルダ１２０の第１の開口端１２０ａ側には、内底面１２５から内上面１２７までの高さがｈａで一定となった第１の部分１２１が設けられており、ホルダ１２０の第２の開口端１２０ｂ側には、高さがｈａからｈｂまで次第に低くなるテーパ形状の第２の部分１２２が設けられている。第２の部分１２２におけるテーパ角度は、半導体装置１１０の側凸部１１３のテーパ角度と一致している。また、高さｈａは半導体装置１１０におけるリード端子１１４側の高さｈ１以上であり、第２の開口端１２０ｂにおける高さｈｂは半導体装置１１０における前方側の高さｈ２以下である。 In the present embodiment, a first portion 121 having a constant height ha from the inner bottom surface 125 to the inner upper surface 127 is provided on the first opening end 120 a side of the holder 120. On the second opening end 120b side, a tapered second portion 122 whose height gradually decreases from ha to hb is provided. The taper angle in the second portion 122 matches the taper angle of the side protrusion 113 of the semiconductor device 110. The height ha is equal to or higher than the height h1 on the lead terminal 114 side in the semiconductor device 110, and the height hb at the second opening end 120b is equal to or lower than the height h2 on the front side in the semiconductor device 110.
　このため、第１の開口端１２０ａ側から、前方側を前にして半導体装置１１０を開口部に挿入すると、ホルダ１２０の内底面１２５から内上面１２７までの高さが、側凸部１１３の高さｈ２と一致する位置において、半導体装置１１０とホルダ１２０とが嵌合して固定される。従って、半導体装置１１０のホルダ１２０における前後方向の位置決めをすることができる。これにより、ＬＥＤである半導体素子１１５と窓部１２９との位置合わせが容易となる。例えば、第２の開口端１２０ｂにおける高さｈｂを側凸部１１３の高さｈ２とほぼ等しくすると、半導体装置１１０における前方側の端部の位置をホルダ１２０の第２の開口端１２０ｂの位置に合わせることができる。また、ホルダ１２０の内底面１２５の横幅と半導体装置１１０の横幅との寸法差は、はめ合うことが可能となるように、０．０５ｍｍ～０．１５ｍｍとなっている。このため、半導体装置１１０の横方向の位置決めもすることができる。 For this reason, when the semiconductor device 110 is inserted into the opening from the first opening end 120a side with the front side forward, the height from the inner bottom surface 125 to the inner upper surface 127 of the holder 120 is the height of the side protrusion 113. The semiconductor device 110 and the holder 120 are fitted and fixed at a position corresponding to the height h2. Therefore, positioning in the front-rear direction in the holder 120 of the semiconductor device 110 can be performed. This facilitates the alignment of the semiconductor element 115 that is an LED and the window portion 129. For example, when the height hb at the second opening end 120 b is substantially equal to the height h 2 of the side protrusion 113, the position of the front end of the semiconductor device 110 is set to the position of the second opening end 120 b of the holder 120. Can be matched. In addition, the dimensional difference between the lateral width of the inner bottom surface 125 of the holder 120 and the lateral width of the semiconductor device 110 is 0.05 mm to 0.15 mm so that they can be fitted. For this reason, the semiconductor device 110 can be positioned in the lateral direction.
　半導体装置１１０の側凸部１１３がホルダ１２０の開口部と嵌合する位置においては、平坦部１１２の裏面が、ホルダ１２０の内底面１２５に押し付けられる。このため、半導体装置１１０とホルダ１２０とを面接触させることができ、放熱効率も向上する。半導体装置１１０は、平坦部１１２の底面だけでなく、側凸部１１３の側面及び上面においても、ホルダ１２０と接触しており、放熱性がより向上する。 The back surface of the flat portion 112 is pressed against the inner bottom surface 125 of the holder 120 at a position where the side protrusion 113 of the semiconductor device 110 is fitted with the opening of the holder 120. For this reason, the semiconductor device 110 and the holder 120 can be brought into surface contact, and the heat dissipation efficiency is also improved. The semiconductor device 110 is in contact with the holder 120 not only on the bottom surface of the flat portion 112 but also on the side surface and the top surface of the side projection 113, and the heat dissipation is further improved.
　平坦部１１２の裏面に硬度が低いスズ（Ｓｎ）等の金属からなる金属メッキ層を設けてもよい。このようにすれば、半導体装置１１０をホルダ１２０に挿入する際の挿入力及び圧接力によりメッキ層が変形する。このため、平坦部１１２の裏面とホルダ１２０の内底面１２５との間に微小な空隙が生じにくく、密着性をより向上させることができる。従って、熱抵抗が低下し、より良好な放熱性が得られる。 A metal plating layer made of a metal such as tin (Sn) having a low hardness may be provided on the back surface of the flat portion 112. In this way, the plating layer is deformed by the insertion force and pressure contact force when the semiconductor device 110 is inserted into the holder 120. For this reason, it is hard to produce a micro space | gap between the back surface of the flat part 112, and the inner bottom face 125 of the holder 120, and can improve adhesiveness more. Accordingly, the thermal resistance is lowered and better heat dissipation is obtained.
　半導体装置１１０をホルダ１２０に挿入することにより嵌合して固定することができるが、半導体装置１１０とホルダ１２０とを熱伝導性接着剤を用いて固定してもよい。これにより、半導体装置１１０とホルダ１２０とをより強固に固定することができる。また、図４に示すように、第１の部分１２１と第２の部分１２２との境界付近に、突起１２８を設けてもよい。突起１２８を設けることにより、半導体装置１１０の側凸部１１３の後端部と突起１２８とが接触し、突起１２８は抜け止めとして機能する。これにより、より確実に半導体装置１１０をホルダ１２０に固定することができる。 Although the semiconductor device 110 can be fitted and fixed by inserting it into the holder 120, the semiconductor device 110 and the holder 120 may be fixed using a heat conductive adhesive. Thereby, the semiconductor device 110 and the holder 120 can be more firmly fixed. Further, as shown in FIG. 4, a protrusion 128 may be provided in the vicinity of the boundary between the first portion 121 and the second portion 122. By providing the protrusion 128, the rear end portion of the side convex portion 113 of the semiconductor device 110 and the protrusion 128 come into contact with each other, and the protrusion 128 functions as a stopper. Thereby, the semiconductor device 110 can be more securely fixed to the holder 120.
　本実施形態においては、ホルダ１２０の第２の部分１２２だけをテーパ形状としたが、第１の部分１２１もテーパ形状であってもよい。この場合、第１の部分１２１の最も低い部分の高さを、半導体装置１１０のリード端子１１４側の高さｈ１よりも大きくすればよい。また、第１の部分１２１のテーパ角度は、第２の部分１２２と同じであっても、異なっていてもよい。 In the present embodiment, only the second portion 122 of the holder 120 is tapered, but the first portion 121 may also be tapered. In this case, the height of the lowest portion of the first portion 121 may be made larger than the height h1 of the semiconductor device 110 on the lead terminal 114 side. Further, the taper angle of the first portion 121 may be the same as or different from that of the second portion 122.
　（第１変形例）
　図５Ａ及び図５Ｂに示すように、平坦部１１２の裏面に放熱用の突起部１４１を設けてもよい。放熱用の突起部１４１を設けることにより、平坦部１１２の裏面とホルダ１２０との内底面１２５との接触圧を、より高くすることができる。このため、半導体装置１１０からホルダ１２０へ、より効率良く熱を伝え、放熱することが可能となる。 (First modification)
As shown in FIGS. 5A and 5B, a heat radiation protrusion 141 may be provided on the back surface of the flat portion 112. By providing the heat radiation projection 141, the contact pressure between the back surface of the flat portion 112 and the inner bottom surface 125 of the holder 120 can be further increased. For this reason, it is possible to transmit heat from the semiconductor device 110 to the holder 120 more efficiently and dissipate heat.
　放熱効率を向上させる観点から、突起部１４１は、平坦部１１２を挟んで半導体素子１１５と対向する位置に配置することが好ましい。この場合、突起部１４１は、平面視において半導体素子１１５の搭載位置と重なる。また、突起部１４１の平面サイズは、半導体素子１１５と同じかそれ以上とすることが好ましい。半導体素子１１５の搭載位置の裏側においてより接触圧を高くする観点からは、突起部１４１の平面サイズは、平坦部１１２の裏面のサイズよりも小さいことが好ましい。突起部１４１の厚さは、厚い方が接触圧を高くできるが、熱抵抗の増加を抑制する観点から、０．０５ｍｍ～０．１ｍｍ程度とすることが好ましい。突起部１４１とホルダ１２０との接触面積を大きくするために、突起部１４１の表面はできるだけ平坦であることが好ましい。突起部１４１の材質は特に限定されないが、熱伝導率が高い銅などの金属を用いることができる。 From the viewpoint of improving the heat dissipation efficiency, the protrusion 141 is preferably disposed at a position facing the semiconductor element 115 with the flat portion 112 interposed therebetween. In this case, the protrusion 141 overlaps the mounting position of the semiconductor element 115 in plan view. The planar size of the protrusion 141 is preferably the same as or larger than that of the semiconductor element 115. From the viewpoint of increasing the contact pressure on the back side of the mounting position of the semiconductor element 115, the planar size of the protrusion 141 is preferably smaller than the size of the back surface of the flat portion 112. The thicker the protrusion 141, the higher the contact pressure. However, from the viewpoint of suppressing an increase in thermal resistance, the thickness is preferably about 0.05 mm to 0.1 mm. In order to increase the contact area between the protrusion 141 and the holder 120, the surface of the protrusion 141 is preferably as flat as possible. Although the material of the protrusion 141 is not particularly limited, a metal such as copper having high thermal conductivity can be used.
　（第２変形例）
　側凸部１１３が設けられている部分において平坦部１１２の幅がほぼ一定である例を示したが、図６Ａ～図６Ｃに示すように、平坦部１１２の幅が変化する構成としてもよい。図６Ａ～図６Ｃにおいては、平坦部１１２が、前方側においてリード端子１１４側と比べて幅が狭い、直角台形状となっている。このため、２つの側凸部１１３のうちの一方の側凸部１１３ａは、フレーム１１１の側凸部１１３が設けられていない辺に対して傾いている。従って、一方の側凸部１１３ａは、前方側の端部の位置が、リード端子１１４側の端部の位置よりも半導体素子１１５側に位置している。 (Second modification)
Although the example in which the width of the flat portion 112 is almost constant in the portion where the side convex portion 113 is provided has been shown, the width of the flat portion 112 may be changed as shown in FIGS. 6A to 6C. 6A to 6C, the flat portion 112 has a right trapezoidal shape with a narrower width on the front side than the lead terminal 114 side. For this reason, one side convex part 113a of the two side convex parts 113 is inclined with respect to the side where the side convex part 113 of the frame 111 is not provided. Therefore, the one side convex portion 113a is positioned closer to the semiconductor element 115 than the position of the end portion on the lead terminal 114 side at the front end portion.
　平坦部１１２の前方側の幅をホルダ１２０の開口部の幅よりも狭くすることにより、半導体装置１１０をホルダ１２０の開口部に挿入しやすくなる。また、リード端子１１４側の幅をホルダ１２０の開口部の幅と同じとするか、若干広くすれば、ホルダ１２０への挿入に従い、平坦部１１２の幅が次第に拡がる。これにより、側凸部１１３の側面がホルダ１２０の内側面１２６に次第に大きな力で押し付けられる。このため、半導体装置１１０がホルダ１２０内に強い力で固定される。従って、半導体装置１１０とホルダ１２０との間の熱抵抗をより低くすることができる。また、半導体装置１１０のホルダ１２０内における左右方向の位置決めが容易となる。半導体装置１１０の横幅の増大を抑える観点から、一方の側凸部１１３ａの傾きは、側凸部１１３が設けられていない辺と直交する方向に対して１０°以下とすることが好ましい。 By making the width of the front side of the flat portion 112 narrower than the width of the opening of the holder 120, the semiconductor device 110 can be easily inserted into the opening of the holder 120. If the width on the lead terminal 114 side is the same as or slightly wider than the width of the opening of the holder 120, the width of the flat portion 112 gradually increases as the holder 120 is inserted. Thereby, the side surface of the side projection 113 is gradually pressed against the inner surface 126 of the holder 120 with a large force. For this reason, the semiconductor device 110 is fixed in the holder 120 with a strong force. Therefore, the thermal resistance between the semiconductor device 110 and the holder 120 can be further reduced. In addition, the horizontal positioning in the holder 120 of the semiconductor device 110 is facilitated. From the viewpoint of suppressing an increase in the lateral width of the semiconductor device 110, the inclination of the one side protrusion 113a is preferably 10 ° or less with respect to the direction orthogonal to the side where the side protrusion 113 is not provided.
　一方の側凸部１１３ａの全体が、側凸部１１３が設けられていない辺に対して傾いている構成としたが、一方の側凸部１１３ａの前方側の部分だけが側凸部１１３が設けられていない辺に対して傾いている構成としてもよい。一方の側凸部１１３ａだけが側凸部１１３が設けられていない辺に対して傾いている構成に代えて、両方の側凸部１１３が傾いている構成としてもよい。この場合、平坦部１１２を等脚台形状として２つの側凸部１１３の傾きを同じにしてもよい。また、２つの側凸部１１３の傾きは互いに異なっていてもよい。一方又は両方の側凸部１１３を側凸部１１３が設けられていない辺に対して傾けて配置する場合には、ホルダ１２０の内側面１２６を側凸部１１３の傾きに合わせて斜めにしてもよい。これらの構成の場合においても、平坦部１１２の裏面に金属めっき層を設けることができ、放熱用の突起部１４１を設けることができる。 The entire side convex portion 113a is inclined with respect to the side where the side convex portion 113 is not provided. However, only the portion on the front side of the one side convex portion 113a is provided with the side convex portion 113. It is good also as a structure inclined with respect to the edge | side which is not made. Instead of the configuration in which only one side convex portion 113a is inclined with respect to the side where the side convex portion 113 is not provided, a configuration in which both side convex portions 113 are inclined may be employed. In this case, the flat portion 112 may be an isosceles trapezoidal shape, and the inclination of the two side convex portions 113 may be the same. Further, the inclinations of the two side convex portions 113 may be different from each other. When one or both of the side protrusions 113 are inclined with respect to the side where the side protrusions 113 are not provided, the inner side surface 126 of the holder 120 is inclined according to the inclination of the side protrusions 113. Good. Even in the case of these configurations, a metal plating layer can be provided on the back surface of the flat portion 112, and the heat radiation projection 141 can be provided.
　（第３変形例）
　フレーム１１１の一部を平坦部１１２に対して起立するように折り曲げることにより形成した側凸部１１３を有している例を示したが、以下のような構成としてもよい。例えば、図７に示すようにフレーム１１１の前方側に突出した部分を、リード端子１１４側に折り返えすことにより側凸部１１３Ａを形成してもよい。側凸部１１３Ａはバネとしても機能するため、半導体装置１１０とホルダ１２０との固定をより効果的に行うことができる。 (Third Modification)
Although the example which has the side convex part 113 formed by bend | folding so that a part of frame 111 may stand up with respect to the flat part 112 was shown, it is good also as the following structures. For example, as shown in FIG. 7, the side protrusion 113 </ b> A may be formed by folding back a portion protruding to the front side of the frame 111 to the lead terminal 114 side. Since the side protrusion 113A also functions as a spring, the semiconductor device 110 and the holder 120 can be more effectively fixed.
　（第４変形例）
　また、図８に示すようにフレーム１１１に平坦部１１２とスリットにより分離され且つ前方側において平坦部１１２と接続された部分を、リード端子１１４側に向かって平坦部の主面からの高さが高くなるように折り曲げることにより側凸部１１３Ｂを形成してもよい。これにより半導体装置１１０の形成に必要なフレーム１１１の面積が減少し、配置ピッチ寸法を縮小できる。従って、フレーム１１１を形成するための材料の利用効率が向上しコストダウンが図れる。また、フレーム１１１の端部を主面に対して起立するように折り曲げる場合よりも、作業工数が減少するためコストダウンが可能である。 (Fourth modification)
Further, as shown in FIG. 8, the portion separated from the flat portion 112 and the slit on the frame 111 and connected to the flat portion 112 on the front side has a height from the main surface of the flat portion toward the lead terminal 114 side. You may form the side convex part 113B by bending so that it may become high. Thereby, the area of the frame 111 necessary for forming the semiconductor device 110 is reduced, and the arrangement pitch dimension can be reduced. Therefore, the utilization efficiency of the material for forming the frame 111 is improved and the cost can be reduced. Further, since the number of work steps is reduced as compared with the case where the end portion of the frame 111 is bent so as to stand up with respect to the main surface, the cost can be reduced.
　なお、図７及び図８に示すような構成の場合においても、平坦部１１２の裏面に金属めっき層を設けることができ、放熱用の突起部１４１を設けることができる。また、平坦部１１２の一部の平面形状を台形状としてもよい。 7 and 8, the metal plating layer can be provided on the back surface of the flat portion 112, and the heat radiation protrusion 141 can be provided. Further, a part of the planar shape of the flat portion 112 may be trapezoidal.
　側凸部の高さが、前方側からリード端子１１４側に向かって次第に高くなるテーパ形状を有する半導体装置について説明したが、前方側からリード端子１１４側に向かって次第に高さが低くなるテーパ形状としてもよい。 Although the semiconductor device having the tapered shape in which the height of the side convex portion gradually increases from the front side toward the lead terminal 114 side has been described, the tapered shape in which the height gradually decreases from the front side toward the lead terminal 114 side. It is good.
　（第５変形例）
　高さが変化する側凸部により、半導体装置をホルダに固定する構成について説明したが、高さが一定の側凸部により、半導体装置をホルダに固定する構成としてもよい。 (5th modification)
Although the configuration in which the semiconductor device is fixed to the holder by the side convex portion whose height changes has been described, the semiconductor device may be fixed to the holder by the side convex portion having a constant height.
　例えば、図９Ａ～図９Ｃ及び図１０に示すように、半導体装置１１０Ａは、高さが一定の側凸部１１３Ｃを有している。側凸部１１３Ｃは、前方側に設けられた爪部１１８と、爪部１１８とスリットにより分離された胴部１１９とを有している。 For example, as shown in FIGS. 9A to 9C and FIG. 10, the semiconductor device 110A has a side protrusion 113C having a constant height. The side protrusion 113C includes a claw portion 118 provided on the front side, and a body portion 119 separated by the claw portion 118 and a slit.
　半導体装置１１０Ａは、図１１Ａ～図１１Ｃに示すような、上面に光が透過する窓部１３９を有するホルダ１３０に挿入することにより半導体パッケージ１００Ａが得られる。ホルダ１３０の開口部は、第１の開口端１３０ａ側に設けられた第１の部分１３１が、内底面１３５側から内上面１３７側に向かって次第に狭くなるように内側面１３６Ａがテーパ状に傾斜した台形状の断面を有している。一方、第２の開口端１３０ｂ側に設けられた第２の部分１３２の内側面１３６Ｂは、内底面１３５に対して垂直となっている。また、第２の部分１３２の奥行きは半導体装置１１０の爪部１１８の幅とほぼ一致している。 When the semiconductor device 110A is inserted into a holder 130 having a window portion 139 through which light passes, as shown in FIGS. 11A to 11C, a semiconductor package 100A is obtained. The opening portion of the holder 130 has an inner side surface 136A inclined in a tapered shape so that the first portion 131 provided on the first opening end 130a side gradually becomes narrower from the inner bottom surface 135 side toward the inner upper surface 137 side. It has a trapezoidal cross section. On the other hand, the inner side surface 136 </ b> B of the second portion 132 provided on the second opening end 130 b side is perpendicular to the inner bottom surface 135. In addition, the depth of the second portion 132 substantially matches the width of the claw portion 118 of the semiconductor device 110.
　このため、前方側を前にして第１の開口端１３０ａ側から半導体装置１１０Ａをホルダ１３０に挿入すると、テーパ面である第１の部分１３１の内側面１３６Ａにより半導体装置１１０Ａの側凸部１１３Ｃは半導体素子１１５側へ変形する。これにより反発力が生じ、半導体装置１１０Ａは、ホルダ１３０の内底面側に押し付けられる。さらに、半導体装置１１０Ａを挿入し、爪部１１８が開口部の第２の部分１３２に達すると、爪部１１８はテーパ面による加圧から解放されるため、外側に広がる。これにより、爪部１１８は半導体装置１１０Ａの抜け止めとなる。従って、接着剤等を用いなくても、半導体装置１１０Ａをホルダ１３０に確実に固定することができる。 Therefore, when the semiconductor device 110A is inserted into the holder 130 from the first opening end 130a side with the front side forward, the side protrusion 113C of the semiconductor device 110A is formed by the inner side surface 136A of the first portion 131 that is a tapered surface. Deformation toward the semiconductor element 115 side. Thereby, a repulsive force is generated, and the semiconductor device 110 </ b> A is pressed against the inner bottom surface side of the holder 130. Further, when the semiconductor device 110A is inserted and the claw portion 118 reaches the second portion 132 of the opening, the claw portion 118 is released from the pressurization by the tapered surface, and thus spreads outward. As a result, the claw portion 118 prevents the semiconductor device 110A from coming off. Therefore, the semiconductor device 110A can be securely fixed to the holder 130 without using an adhesive or the like.
　第２の部分１３２の内側面１３６Ｂが内底面１３５に対して垂直である例を示したが、第１の部分１３１と第２の部分１３２との境界部に段差ができればよく、第２の部分１３２の内側面１３６Ｂは、第１の部分１３１の内側面１３６Ａよりも傾斜が小さければよい。 Although the example in which the inner side surface 136B of the second portion 132 is perpendicular to the inner bottom surface 135 has been shown, it is sufficient if a step is formed at the boundary between the first portion 131 and the second portion 132, and the second portion The inner surface 136B of 132 only needs to have a smaller inclination than the inner surface 136A of the first portion 131.
　半導体装置１１０Ａにおいても、半導体装置１１０と同様に平坦部１１２の底面に金属メッキ層を設けることができ、放熱用の突起部１４１を設けることができる。また、平坦部１１２の一部の平面形状を台形状としてもよい。 Also in the semiconductor device 110A, similarly to the semiconductor device 110, a metal plating layer can be provided on the bottom surface of the flat portion 112, and a projection 141 for heat dissipation can be provided. Further, a part of the planar shape of the flat portion 112 may be trapezoidal.
　高さが一定の側凸部にスリットを設ける例を示したが、高さが変化するテーパ形状の側凸部にスリットを設け、爪部と胴部とを設ける構成としてもよい。 Although an example in which a slit is provided in a side convex portion having a constant height is shown, a configuration may be adopted in which a slit is provided in a tapered side convex portion whose height changes and a claw portion and a trunk portion are provided.
　本実施形態においては、半導体素子１１５が、共振器を有さず低コヒーレンス光を出射するＬＥＤである例を示した。しかし、ＬＥＤに限らず、共振器を有し低コヒーレンス光を出射するスーパールミネッセントダイオード、又は共振器を有し高コヒーレンス光を出射するレーザーダイオード等とすることができる。また、半導体素子１１５は半導体発光素子に限らず、スイッチング素子等のパワー半導体素子とすることもできる。半導体素子１１５がパワー半導体素子の場合には、モールド樹脂１１６を、リード端子１１４だけでなく、半導体素子１１５及びボンディングワイヤ１１７を覆うようにすることができる。これにより、半導体素子１１５及びボンディングワイヤ１１７をモールド樹脂１１６により保護することができる。半導体素子１１５をパワー半導体素子とする場合には、ホルダに窓部を設けなくてよい。 In the present embodiment, an example is shown in which the semiconductor element 115 is an LED that does not have a resonator and emits low-coherence light. However, the present invention is not limited to LEDs, and may be a super luminescent diode that has a resonator and emits low-coherence light, or a laser diode that has a resonator and emits high-coherence light. Further, the semiconductor element 115 is not limited to a semiconductor light emitting element, and may be a power semiconductor element such as a switching element. When the semiconductor element 115 is a power semiconductor element, the mold resin 116 can cover not only the lead terminal 114 but also the semiconductor element 115 and the bonding wire 117. Thereby, the semiconductor element 115 and the bonding wire 117 can be protected by the mold resin 116. When the semiconductor element 115 is a power semiconductor element, it is not necessary to provide a window in the holder.
　（第６変形例）
　半導体素子１１５をパワー半導体素子とする場合には、図１２Ａ～図１２Ｃ及び図１３に示すような構成とすることもできる。半導体装置１１０Ｂは、フレーム１１１が側凸部を有しておらず、モールド樹脂１１６Ａが、半導体素子１１５及びボンディングワイヤ１１７を覆っている。モールド樹脂１１６Ａは、リード端子１１４側の高さｈ３が前方側の高さｈ４よりも高く、リード端子１１４側から前方側に向かって高さが次第に低くなるテーパ形状を有している。モールド樹脂１１６Ａをテーパ形状とすることにより、半導体装置１１０Ｂは、側凸部を有する半導体装置と同様にホルダ１２０の開口部に挿入することができる。但し、ホルダ１２０に窓部１２９を設けなくてよい。モールド樹脂１１６Ａのリード端子１１４側の高さｈ３及び前方側の高さｈ４は、半導体装置１１０における側凸部１１３のリード端子１１４側の高さｈ１及び前方側の高さｈ２と同様に設定することができる。 (Sixth Modification)
When the semiconductor element 115 is a power semiconductor element, the configuration shown in FIGS. 12A to 12C and FIG. 13 may be used. In the semiconductor device 110 </ b> B, the frame 111 does not have a side protrusion, and the mold resin 116 </ b> A covers the semiconductor element 115 and the bonding wire 117. The mold resin 116A has a tapered shape in which the height h3 on the lead terminal 114 side is higher than the height h4 on the front side, and the height gradually decreases from the lead terminal 114 side toward the front side. By forming the mold resin 116A into a tapered shape, the semiconductor device 110B can be inserted into the opening of the holder 120 in the same manner as the semiconductor device having the side protrusions. However, it is not necessary to provide the window part 129 in the holder 120. The height h3 on the lead terminal 114 side and the height h4 on the front side of the mold resin 116A are set similarly to the height h1 on the lead terminal 114 side and the height h2 on the front side of the side protrusion 113 in the semiconductor device 110. be able to.
　半導体装置１１０Ｂのモールド樹脂１１６Ａがホルダ１２０の開口部と嵌合する位置においては、フレーム１１１の平坦部の裏面が、ホルダ１２０の内底面１２５に押し付けられる。このため、半導体装置１１０Ｂとホルダ１２０とを面接触させることができ、放熱効率も向上する。半導体装置１１０Ｂは、フレーム１１１の平坦部の底面だけでなく、モールド樹脂１１６Ａの側面及び上面においても、ホルダ１２０と接触しており、放熱性がより向上する。 In the position where the mold resin 116 </ b> A of the semiconductor device 110 </ b> B is fitted to the opening of the holder 120, the back surface of the flat portion of the frame 111 is pressed against the inner bottom surface 125 of the holder 120. For this reason, the semiconductor device 110B and the holder 120 can be brought into surface contact, and the heat dissipation efficiency is also improved. The semiconductor device 110B is in contact with the holder 120 not only on the bottom surface of the flat portion of the frame 111 but also on the side surface and the top surface of the mold resin 116A, and the heat dissipation is further improved.
　半導体装置１１０Ｂにおいても、半導体装置１１０と同様にフレーム１１１の平坦部の底面に金属メッキ層を設けることができ、放熱用の突起部１４１を設けることができる。また、フレーム１１１の平坦部の一部の平面形状を台形状としてもよい。 Also in the semiconductor device 110B, similarly to the semiconductor device 110, a metal plating layer can be provided on the bottom surface of the flat portion of the frame 111, and a heat radiation projection 141 can be provided. In addition, a part of the planar shape of the flat portion of the frame 111 may be trapezoidal.
　本実施形態の半導体装置によれば、ホルダと半導体装置との勘合により発生する接触力により密接な接触状態が実現できる。これにより、接触熱抵抗が低下して放熱性が向上する。従って、リードフレームタイプのパッケージ形状においても、発熱が大きい高出力の半導体素子を使用すること可能となる。また、この効果は半導体装置及びそれに対応したホルダの形状のみにより実現できるため、コストの抑制及び組立作業性の容易化を達成できる。 According to the semiconductor device of this embodiment, a close contact state can be realized by the contact force generated by the fitting between the holder and the semiconductor device. Thereby, contact thermal resistance falls and heat dissipation improves. Therefore, even in a lead frame type package shape, it is possible to use a high-power semiconductor element that generates a large amount of heat. In addition, since this effect can be realized only by the shape of the semiconductor device and the holder corresponding thereto, the cost can be reduced and the assembly workability can be facilitated.
　本開示に係る半導体装置及び半導体パッケージは、追加部材の削減及び組立作業性の向上を図りながら放熱性が高い半導体装置を実現でき、特にモーションセンサ用発光源等の高出力が求められ、高発熱を伴う半導体発光装置及び半導体発光素子パッケージ等として有用である。 The semiconductor device and the semiconductor package according to the present disclosure can realize a semiconductor device with high heat dissipation while reducing the number of additional members and improving the assembly workability, and particularly high output such as a light source for a motion sensor is required, and high heat generation. It is useful as a semiconductor light-emitting device and a semiconductor light-emitting element package accompanying the above.
１００　　半導体パッケージ
１００Ａ　　半導体パッケージ
１１０　　半導体装置
１１０Ａ　　半導体装置
１１０Ｂ　　半導体装置
１１１　　フレーム
１１２　　平坦部
１１３　　側凸部
１１３Ａ　　側凸部
１１３Ｂ　　側凸部
１１３Ｃ　　側凸部
１１３ａ　　側凸部
１１４　　リード端子
１１５　　半導体素子
１１６　　モールド樹脂
１１６Ａ　　モールド樹脂
１１７　　ボンディングワイヤ
１１８　　爪部
１１９　　胴部
１２０　　ホルダ
１２０ａ　　第１の開口端
１２０ｂ　　第２の開口端
１２１　　第１の部分
１２２　　第２の部分
１２５　　内底面
１２６　　内側面
１２７　　内上面
１２８　　突起
１２９　　窓部
１３０　　ホルダ
１３０ａ　　第１の開口端
１３０ｂ　　第２の開口端
１３１　　第１の部分
１３２　　第２の部分
１３５　　内底面
１３６Ａ　　内側面
１３６Ｂ　　内側面
１３７　　内上面
１３９　　窓部
１４１　　突起部 DESCRIPTION OF SYMBOLS 100 Semiconductor package 100A Semiconductor package 110 Semiconductor device 110A Semiconductor device 110B Semiconductor device 111 Frame 112 Flat part 113 Side convex part 113A Side convex part 113B Side convex part 113C Side convex part 113a Side convex part 114 Lead terminal 115 Semiconductor element 116 Mold resin 116A Mold resin 117 Bonding wire 118 Claw portion 119 Body portion 120 Holder 120a First opening end 120b Second opening end 121 First portion 122 Second portion 125 Inner bottom surface 126 Inner side surface 127 Inner upper surface 128 Projection 129 Window portion 130 Holder 130a First opening end 130b Second opening end 131 First portion 132 Second portion 135 Inner bottom surface 136A Inner side surface 136B Inner side surface 137 Inner upper surface 139 Window 141 Projection

Claims (20)

  1. 　平坦部と、前記平坦部と一体であり前記平坦部の両端部に相対して設けられ、前記平坦部の主面よりも上方に突出した２つの側凸部とを有するフレームと、
    　前記平坦部の前記２つの側凸部とは異なる端部に固定されたリード端子と、
    　前記平坦部の主面上に搭載された半導体素子とを備える、半導体装置。     A frame having a flat portion and two side convex portions that are integral with the flat portion and are provided opposite to both end portions of the flat portion and project upward from the main surface of the flat portion;
    A lead terminal fixed to an end portion different from the two side convex portions of the flat portion;
    A semiconductor device comprising: a semiconductor element mounted on a main surface of the flat portion.
  2. 　前記２つの側凸部は、前記平坦部に対して起立する前記フレームの一部であり、前記リード端子と反対側から前記リード端子側へ向かって次第に高さが高くなるテーパ形状を有する、請求項１に記載の半導体装置。 The two side convex portions are a part of the frame standing up with respect to the flat portion, and have a tapered shape in which the height gradually increases from the side opposite to the lead terminal toward the lead terminal side. Item 14. The semiconductor device according to Item 1.
  3. 　前記２つの側凸部のうちの一方は、前記リード端子と反対側の端部の位置が、前記リード端子側の端部の位置よりも、前記半導体素子側に位置する、請求項２に記載の半導体装置。 The position of the edge part on the opposite side to the said lead terminal of one of the said 2 side convex parts is located in the said semiconductor element side rather than the position of the edge part on the said lead terminal side. Semiconductor device.
  4. 　前記２つの側凸部は、前記フレームの前記リード端子と反対側に突出した部分が、前記リード端子側に折り返された形状であり、前記リード端子と反対側から前記リード端子側へ向かって次第に高さが高くなるテーパ形状を有する、請求項１に記載の半導体装置。 The two side protrusions have a shape in which a portion of the frame protruding to the opposite side of the lead terminal is folded back to the lead terminal side, and gradually from the opposite side of the lead terminal toward the lead terminal side. The semiconductor device according to claim 1, wherein the semiconductor device has a tapered shape that increases in height.
  5. 　前記２つの側凸部は、前記フレームの前記平坦部とスリットにより分離され且つ前記リード端子と反対側の端部において前記平坦部と接続された部分が、前記リード端子側に向かって折り曲げられ、前記リード端子と反対側から前記リード端子側に向かって次第に高さが高くなるテーパ形状を有する、請求項１に記載の半導体装置。 The two side convex portions are separated by the flat portion of the frame and a slit, and a portion connected to the flat portion at the end opposite to the lead terminal is bent toward the lead terminal side, 2. The semiconductor device according to claim 1, wherein the semiconductor device has a tapered shape that gradually increases in height from the side opposite to the lead terminal toward the lead terminal.
  6. 　前記平坦部の前記主面と反対側の面に設けられ、前記フレームよりも硬度が低い金属メッキ層をさらに備えている、請求項１～５のいずれか１項に記載の半導体装置。 6. The semiconductor device according to claim 1, further comprising a metal plating layer provided on a surface of the flat portion opposite to the main surface and having a hardness lower than that of the frame.
  7. 　前記平坦部を挟んで前記半導体素子と対向する位置に設けられた、平板状の突起部をさらに備えている、請求項１～６のいずれか１項に記載の半導体装置。 7. The semiconductor device according to claim 1, further comprising a flat projection provided at a position facing the semiconductor element with the flat portion interposed therebetween.
  8. 　前記半導体素子は、発光ダイオードである、請求項１～７のいずれか１項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 7, wherein the semiconductor element is a light emitting diode.
  9. 　前記半導体素子は、パワー半導体素子である、請求項１～７のいずれか１項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 7, wherein the semiconductor element is a power semiconductor element.
  10. 　前記２つの側凸部は、前記平坦部に対して起立する前記フレームの一部であり、スリットにより互いに分離された爪部と胴部とを有している、請求項１に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein the two side convex portions are a part of the frame that stands up with respect to the flat portion, and have a claw portion and a body portion separated from each other by a slit. .
  11. 　前記平坦部の前記主面と反対側の面に設けられ、前記フレームよりも硬度が低い金属メッキ層をさらに備えている、請求項１０に記載の半導体装置。 The semiconductor device according to claim 10, further comprising a metal plating layer provided on a surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
  12. 　前記平坦部を挟んで前記半導体素子と対向する位置に設けられた、平板状の突起部をさらに備えている、請求項１０又は１１に記載の半導体装置。 The semiconductor device according to claim 10 or 11, further comprising a flat protrusion provided at a position facing the semiconductor element with the flat portion interposed therebetween.
  13. 　前記半導体素子は、発光ダイオードである、請求項１０～１２のいずれか１項に記載の半導体装置。 The semiconductor device according to any one of claims 10 to 12, wherein the semiconductor element is a light emitting diode.
  14. 　前記半導体素子は、パワー半導体素子である、請求項１０～１２のいずれか１項に記載の半導体装置。 The semiconductor device according to any one of claims 10 to 12, wherein the semiconductor element is a power semiconductor element.
  15. 　平坦部を有するフレームと、
    　前記フレームの平坦部の一の端部に固定されたリード端子と、
    　前記平坦部の主面上に搭載された半導体素子と、
    　前記半導体素子を覆うように前記フレームの平坦部上に形成されたモールド樹脂を備え、
    　前記モールド樹脂は、前記リード端子と反対側から前記リード端子側に向かって次第に高さが高くなるテーパ形状を有する、半導体装置。     A frame having a flat portion;
    A lead terminal fixed to one end of the flat portion of the frame;
    A semiconductor element mounted on the main surface of the flat portion;
    A mold resin formed on the flat portion of the frame so as to cover the semiconductor element;
    The mold resin has a tapered shape in which the height gradually increases from the side opposite to the lead terminal toward the lead terminal.
  16. 　前記平坦部の前記主面と反対側の面に設けられ、前記フレームよりも硬度が低い金属メッキ層をさらに備えている、請求項１５に記載の半導体装置。 The semiconductor device according to claim 15, further comprising a metal plating layer provided on a surface opposite to the main surface of the flat portion and having a hardness lower than that of the frame.
  17. 　前記平坦部を挟んで前記半導体素子と対向する位置に設けられた、平板状の突起部をさらに備えている、請求項１５又は１６に記載の半導体装置。 The semiconductor device according to claim 15 or 16, further comprising a flat protrusion provided at a position facing the semiconductor element with the flat portion interposed therebetween.
  18. 　前記半導体素子は、パワー半導体素子である、請求項１５～１７のいずれか１項に記載の半導体装置。 The semiconductor device according to any one of claims 15 to 17, wherein the semiconductor element is a power semiconductor element.
  19. 　請求項２～９及び１５～１８のいずれか１項に記載の半導体装置と、
    　前記半導体装置を収納する、開口部を有するホルダとを備え、
    　前記ホルダは、内底面から内上面までの高さが第１の開口端側において第２の開口端側よりも高く、前記内上面の少なくとも一部が、前記テーパ形状と対応して傾斜している、半導体パッケージ。     A semiconductor device according to any one of claims 2 to 9 and 15 to 18,
    A holder having an opening for accommodating the semiconductor device;
    The holder has a height from the inner bottom surface to the inner upper surface that is higher on the first opening end side than the second opening end side, and at least a part of the inner upper surface is inclined corresponding to the tapered shape. A semiconductor package.
  20. 　請求項１０～１４のいずれか１項に記載の半導体装置と、
    　前記半導体装置を収納する、開口部を有するホルダとを備え、
    　前記ホルダは、第１の開口端側に設けられ、内側面が内底面側から内上面側に向かって次第に狭くなるように傾斜した第１の部分と、第２の開口端側に設けられ、前記内側面の傾斜が前記第１の部分よりも小さい第２の部分とを有している、半導体パッケージ。     The semiconductor device according to any one of claims 10 to 14,
    A holder having an opening for accommodating the semiconductor device;
    The holder is provided on the first opening end side, provided on the first opening end side, the first portion inclined so that the inner side surface gradually becomes narrower from the inner bottom side toward the inner upper surface side, The semiconductor package which has a 2nd part with the inclination of the said inner surface smaller than a said 1st part.
PCT/JP2015/000054 2014-01-30 2015-01-08 Semiconductor device and semiconductor package WO2015115026A1 (en)

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JP2009260078A (en) * 2008-04-17 2009-11-05 Toshiba Corp Light-emitting apparatus and lead frame
JP2010071724A (en) * 2008-09-17 2010-04-02 Mitsubishi Electric Corp Resin molded semiconductor sensor and method of manufacturing the same
JP2010525569A (en) * 2007-04-19 2010-07-22 エルジー イノテック カンパニー リミテッド Light emitting device package and light unit including the same

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JPH0470755U (en) * 1990-10-31 1992-06-23
JPH04368161A (en) * 1991-06-17 1992-12-21 Nec Corp Lead frame
JP2010525569A (en) * 2007-04-19 2010-07-22 エルジー イノテック カンパニー リミテッド Light emitting device package and light unit including the same
JP2009260078A (en) * 2008-04-17 2009-11-05 Toshiba Corp Light-emitting apparatus and lead frame
JP2010071724A (en) * 2008-09-17 2010-04-02 Mitsubishi Electric Corp Resin molded semiconductor sensor and method of manufacturing the same

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