WO2015114786A1 - Appareil émettant de la lumière - Google Patents

Appareil émettant de la lumière Download PDF

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Publication number
WO2015114786A1
WO2015114786A1 PCT/JP2014/052158 JP2014052158W WO2015114786A1 WO 2015114786 A1 WO2015114786 A1 WO 2015114786A1 JP 2014052158 W JP2014052158 W JP 2014052158W WO 2015114786 A1 WO2015114786 A1 WO 2015114786A1
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Prior art keywords
light emitting
terminal
conductive
emitting device
layer
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PCT/JP2014/052158
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English (en)
Japanese (ja)
Inventor
誠 保科
田中　信介
秀隆 大峡
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パイオニアＯｌｅｄライティングデバイス株式会社
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Priority to JP2015559681A priority Critical patent/JPWO2015114786A1/ja
Priority to PCT/JP2014/052158 priority patent/WO2015114786A1/fr
Publication of WO2015114786A1 publication Critical patent/WO2015114786A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
    • H01L2224/85365—Shape, e.g. interlocking features
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to a light emitting device.
  • an organic EL element uses an organic layer as a light emitting layer, a sealing structure is required.
  • the organic EL element is sealed using a sealing member formed of glass or metal.
  • the terminal connected to an organic EL element is arrange
  • Patent Document 1 describes that a terminal of a liquid crystal display panel and a terminal of a semiconductor unit are connected through conductive particles. Specifically, the terminals of the semiconductor unit are covered with a thermosetting insulating film. The conductive particles break through this insulating coating.
  • Patent Document 2 describes that a terminal of a liquid crystal display device and an external wiring are connected through conductive particles. Specifically, the terminals of the liquid crystal display device are covered with an inorganic insulating layer. The conductive particles break through this inorganic insulating layer. In addition, as a formation method of an inorganic insulating layer, sputtering method and CVD method are illustrated.
  • Patent Document 3 describes connecting solar cells adjacent to each other using a connecting member.
  • the terminal of the photovoltaic cell and the connection member are connected using conductive particles.
  • the terminal of the photovoltaic cell is covered with the insulating layer.
  • the electroconductive particle has penetrated this insulating layer.
  • the material for the insulating layer include organic materials such as polyimide and polyamideimide, and inorganic materials such as silica and alumina.
  • methods for forming the insulating layer include painting, thermal spraying, dipping, sputtering, vapor deposition, and spraying.
  • the invention according to claim 1 is a substrate; A light emitting element formed on the substrate and having an organic layer; A terminal electrically connected to the light emitting element; A protective film covering the light emitting element and the terminal; With In the light emitting device, a conductive fiber is located on a surface of the terminal.
  • FIG. 1 is a plan view illustrating a configuration of a light emitting device according to Example 1.
  • FIG. 7 is a cross-sectional view taken along the line AA in FIG. It is a figure which shows the modification of FIG. It is a figure which shows the modification of FIG. 6 is a plan view illustrating a configuration of a light emitting device according to Example 2.
  • FIG. 1 is a cross-sectional view illustrating a configuration of a light emitting device 10 according to the first embodiment.
  • the light emitting device 10 according to the present embodiment is, for example, a lighting device or a display, and includes a substrate 100, a light emitting element 102, terminals 112 and 132, and a protective film 140.
  • the light emitting element 102 is formed on the substrate 100 and has an organic layer 120.
  • the terminals 112 and 132 are formed on the substrate 100 and connected to the light emitting element 102.
  • the protective film 140 covers the light emitting element 102 and the terminals 112 and 132.
  • Conductive fibers are located on the surfaces of the terminals 112 and 132. In the example shown in this figure, the surfaces of the terminals 112 and 132 are formed of a conductive fiber layer 150 containing conductive fibers. Details will be described below.
  • the substrate 100 is a transparent substrate such as a glass substrate or a resin substrate.
  • the substrate 100 may have flexibility.
  • the thickness of the substrate 100 is, for example, not less than 10 ⁇ m and not more than 1000 ⁇ m.
  • the substrate 100 may be formed of either an inorganic material or an organic material.
  • the substrate 100 is, for example, a polygon such as a rectangle.
  • the light emitting element 102 has a configuration in which the organic layer 120 is sandwiched between the first electrode 110 and the second electrode 130. At least one of the first electrode 110 and the second electrode 130 is a translucent electrode.
  • the remaining electrodes are made of, for example, a metal selected from the first group consisting of Al, Mg, Au, Ag, Pt, Sn, Zn, and In, or an alloy of a metal selected from the first group. Formed by a metal layer.
  • the material of the translucent electrode is, for example, a network using an inorganic material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), a conductive polymer such as a polythiophene derivative, or a nanowire made of silver or carbon. Electrode.
  • the first electrode 110, the organic layer 120, and the second electrode 130 are stacked on the substrate 100 in this order. It is a translucent electrode, and the second electrode 130 is an electrode that reflects light such as Al.
  • the first electrode 110 is It is an electrode that reflects light, such as Al
  • the second electrode 130 is a translucent electrode.
  • both electrodes may be translucent electrodes to form a translucent light emitting device (dual emission type).
  • the organic layer 120 has a configuration in which, for example, a hole transport layer, a light emitting layer, and an electron transport layer are stacked in this order.
  • a hole injection layer may be formed between the hole transport layer and the first electrode 110.
  • an electron injection layer may be formed between the electron transport layer and the second electrode 130.
  • the layer of the organic layer 120 may be formed by a coating method or a vapor deposition method, and a part thereof may be formed by a coating method and the rest may be formed by a vapor deposition method. Note that the organic layer 120 may be formed by a vapor deposition method using a vapor deposition material, or may be formed by an ink jet method, a printing method, or a spray method using a coating material.
  • Terminals 112 and 132 are formed on the surface of the substrate 100 where the light emitting element 102 is formed.
  • the terminal 112 is connected to the first electrode 110, and the terminal 132 is connected to the second electrode 130.
  • the organic layer 120 is not formed on a part of the first electrode 110 and serves as the terminal 112.
  • the terminal 132 has the same layer as the first electrode 110.
  • an insulating layer 160 is formed on the substrate 100.
  • the insulating layer 160 insulates the light emitting element 102.
  • the insulating layer 160 is formed before the organic layer 120 and the second electrode 130.
  • the insulating layer 160 is formed of a material such as polyimide, silicon oxide, or silicon nitride.
  • a layer for example, a metal layer
  • a material having a lower resistance than that of the first electrode 110 may be formed on the portion of the first electrode 110 that becomes the terminal 112.
  • the protective film 140 is formed using a film forming method, for example, an ALD (Atomic Layer Deposition) method or a CVD method.
  • ALD Atomic Layer Deposition
  • the protective film 140 is formed of, for example, a metal oxide film such as aluminum oxide, and the film thickness thereof is, for example, 10 nm to 200 nm, preferably 50 nm to 100 nm.
  • the protective film 140 is formed of an inorganic insulating film such as a silicon oxide film, and the thickness thereof is, for example, not less than 0.1 ⁇ m and not more than 10 ⁇ m.
  • the protective film 140 may be formed by a sputtering method.
  • the protective film 140 is formed of an insulating film such as SiO 2 or SiN.
  • the film thickness is 10 nm or more and 1000 nm or less.
  • the conductive fiber layer 150 is formed on the surface layer of the terminals 112 and 132. In the example shown in this figure, there are no other layers between the terminals 112 and 132 and the conductive fiber layer 150, and there are no other layers between the conductive fiber layer 150 and the protective film 140. Not. However, another layer may exist between the terminals 112 and 132 and the conductive fiber layer 150, or another layer may exist between the conductive fiber layer 150 and the protective film 140.
  • the thickness of the conductive fiber layer 150 is, for example, not less than 0.1 nm and not more than 500 nm.
  • FIG. 2 is a first example of an enlarged view of the terminal 112 and the conductive fiber layer 150.
  • the laminated structure of the terminal 132 and the conductive fiber layer 150 is the same as the structure shown in this figure.
  • the conductive fiber layer 150 is obtained by mixing a plurality of conductive fibers 152 in a solvent, and is formed by spin coating, slit coating, die coating, ink jetting, or the like, and then fired to form a mesh electrode. Also, patterning by a photo process can be combined.
  • the conductive fiber 152 is a nanowire made of a conductor such as metal (for example, silver) or carbon, and has a thickness of about 0.1 to 10 nm.
  • the conductive fibers 152 include nanotubes, nanoparticles, flaky graphite, and the like. Further, on the surface of the conductive fiber layer 150, a mesh is formed so that the conductive fiber 152 is folded, and unevenness of several tens to several hundreds nm is formed.
  • the conductive fiber layer 150 can also be regarded as a part of the terminals 112 and 132. For this reason, it can be said that irregularities are formed on the surfaces of the terminals 112 and 132 due to the conductive fibers 152.
  • the protective film 140 is cracked due to the unevenness. This crack is formed by heating and cooling the terminals 112 and 132. And the conductive fiber 152 is exposed from this crack. In other words, the conductive fiber 152 breaks through the protective film 140.
  • FIG. 3 is a second example of an enlarged view of the terminal 112 and the conductive fiber layer 150.
  • the laminated structure of the terminal 132 and the conductive fiber layer 150 is the same as the structure shown in this figure.
  • the conductive fiber layer 150 is formed of conductive fibers 152.
  • Such a structure can be realized, for example, by applying (for example, inkjet) a volatile solvent mixed with the conductive fibers 152.
  • the first electrode 110 and the terminal 132 are formed on the substrate 100.
  • the first electrode 110 and the terminal 132 are formed using, for example, a sputtering method.
  • the insulating layer 160 is formed between the first electrode 110 and the terminal 132.
  • the organic layer 120 is formed on the first electrode 110.
  • the second electrode 130 is formed using, for example, a sputtering method or a vapor deposition method.
  • the conductive fiber layer 150 is formed on the terminals 112 and 132.
  • the conductive fiber layer 150 is formed using a coating method such as an inkjet method.
  • the second electrode 130 may be formed after the conductive fiber layer 150 is formed.
  • the second electrode 130 is formed using, for example, a sputtering method, and the protective film 140 is formed using, for example, an ALD method or a CVD method.
  • FIG. 4 is a cross-sectional view for explaining a method of connecting the conductive member 200 to the terminal 112.
  • the conductive member 200 is a member formed of, for example, a lead frame, and connects the light emitting device 10 to the circuit board. For example, at least a part of the control circuit of the light emitting device 10 is formed on the circuit board.
  • the terminal 112 and the conductive member 200 are connected using the conductive adhesive layer 300.
  • the conductive adhesive layer 300 has a conductive member 310.
  • the conductive member 310 (for example, conductive particles) included in the conductive adhesive layer 300 penetrates the protective film 140 and connects the terminal 112 and the conductive member 200. At this time, the terminal 112 is electrically connected to the conductive member 310 via the conductive fiber 152.
  • the conductive member 310 easily breaks through the protective film 140.
  • the light emitting element 102 is sealed by the protective film 140. Since the protective film 140 is formed using a film formation method, the terminals 112 and 132 of the light emitting element 102 are also covered with the protective film 140. Here, the conductive fibers 152 are located on the surfaces of the terminals 112 and 132. For this reason, the portion of the protective film 140 located above the terminals 112 and 132 is likely to crack. When the protective film 140 is cracked, the conductive member 310 easily breaks through the protective film 140. Therefore, it becomes easy to connect the conductive member 200 and the first electrode 110 using the conductive adhesive layer 300. The same applies to the connection between the conductive member 200 and the second electrode 130.
  • FIG. 5 is a cross-sectional view showing the configuration of the light emitting device 10 according to the second embodiment, and corresponds to FIG. 4 in the first embodiment.
  • the light emitting device 10 according to the present embodiment has the same configuration as the light emitting device 10 according to the first embodiment, except that the bonding wire 210 is used instead of the conductive member 200 and the conductive adhesive layer 300. .
  • the bonding wire 210 is connected to the terminals 112 and 132 using, for example, an ultrasonic vibration method.
  • a portion of the protective film 140 located above the terminals 112 and 132 is cracked.
  • a portion of the bonding wire 210 melted by frictional heat penetrates into the crack in the protective film 140 and is connected to the terminals 112 and 132.
  • portions of the protective film 140 located on the terminals 112 and 132 may be removed. In this case, the connection area between the bonding wire 210 and the terminals 112 and 132 is increased.
  • the conductive fibers 152 are located on the surfaces of the terminals 112 and 132, the portion of the protective film 140 located above the terminals 112 and 132 is likely to crack. For this reason, the bonding wire 210 is easily connected to the terminals 112 and 132.
  • FIG. 6 is a plan view illustrating the configuration of the light emitting device 10 according to the first embodiment.
  • FIG. 7 is a cross-sectional view taken along the line AA in FIG.
  • the second electrode 130, the protective film 140, the conductive member 200, the conductive adhesive layer 300, the conductive member 310, and the terminal 132 are omitted for illustration, but these configurations are implemented. It is the same as the form.
  • the light emitting device 10 has a plurality of light emitting elements 102.
  • An insulating layer 160 is formed between the adjacent light emitting elements 102.
  • a terminal 112 is formed for each of the plurality of light emitting elements 102.
  • the plurality of terminals 112 are arranged on the edge of the substrate 100 side by side.
  • a conductive fiber 152 is disposed on each of the plurality of terminals 112. As shown in FIG. 7, the conductive adhesive layer 300 is formed across the plurality of terminals 112.
  • the terminal 112 has a configuration in which a layer 113 made of the same material as the first electrode 110 and a layer 111 made of a material (for example, metal) having a lower resistance than this layer are laminated in this order. .
  • the terminal 132 has the same configuration.
  • the method of connecting the conductive member 200 to the terminal 132 is also as described with reference to FIGS.
  • one conductive member 200 is connected to the plurality of terminals 112.
  • the plurality of terminals 112 may be connected to different conductive members 200.
  • the conductive fiber layer 150 having the conductive fibers 152 may be formed across the plurality of terminals 112.
  • the conductive fibers 152 are located on the surface layers of the terminals 112 and 132. For this reason, the portion of the protective film 140 located above the terminals 112 and 132 is likely to crack. For this reason, the conductive member 310 easily breaks through the protective film 140. Therefore, it becomes easy to connect the conductive member 200 and the first electrode 110 using the conductive adhesive layer 300.
  • the bonding wire 210 shown in the second embodiment may be used instead of the conductive adhesive layer 300 and the conductive member 200.
  • the conductive fiber layer 150 may be formed of only the conductive fibers 152.
  • FIG. 10 is a plan view illustrating a configuration of the light emitting device 10 according to the second embodiment, and corresponds to FIG. 6 in the first embodiment.
  • the light emitting device 10 is a display and has a plurality of light emitting elements 102 arranged in a matrix.
  • the plurality of first electrodes 110 extend in parallel to each other, and the plurality of second electrodes 130 extend in a direction parallel to each other and intersecting the first electrode 110 (for example, a direction orthogonal to each other). ing.
  • a light emitting element 102 is formed at each intersection of the first electrode 110 and the second electrode 130.
  • the insulating layer 160 is formed over the plurality of first electrodes 110.
  • An opening is formed in a portion of the insulating layer 160 located at the intersection of the first electrode 110 and the second electrode 130.
  • An organic layer 120 is provided in the opening.
  • the terminal 112 is provided on each of the plurality of first electrodes 110, and the terminal 132 is provided on each of the plurality of second electrodes 130.
  • the plurality of terminals 112 and 132 are all disposed along the edge of the substrate 100. In the example shown in this drawing, the plurality of terminals 112 and 132 are all disposed along the same side of the substrate 100. However, the terminal 112 and the terminal 132 may be disposed along different sides of the substrate 100.
  • the conductive fiber 152 is disposed on the plurality of terminals 112 and 132.
  • the arrangement of the conductive fiber layer 150 including the conductive fibers 152 is the same as that in the example shown in FIG.
  • the conductive fibers 152 are located on the surfaces of the terminals 112 and 132. Therefore, it becomes easy to connect the conductive member 200 and the first electrode 110 using the conductive adhesive layer 300.
  • the bonding wire 210 shown in the second embodiment may be used instead of the conductive adhesive layer 300 and the conductive member 200.
  • the conductive fiber layer 150 may be formed of only the conductive fibers 152.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Cette invention concerne un appareil émettant de la lumière (10), comprenant un substrat (100), un élément électroluminescent (102), des bornes (112, 132) et un film protecteur (140). Ledit élément électroluminescent (102) est formé sur le substrat (100) et il comprend une couche organique (120). Lesdites bornes (112, 132) sont formées sur le substrat (100), et elles sont connectées à l'élément électroluminescent (102). Ledit élément électroluminescent (102) et lesdites bornes (112, 132) sont recouverts du film protecteur (140). Une fibre conductrice est disposée sur chacune des surfaces des bornes (112, 132). Par exemple, chacune des surfaces des bornes (112, 132) est constituée d'une couche de fibres conductrices (150) contenant ladite fibre conductrice.
PCT/JP2014/052158 2014-01-30 2014-01-30 Appareil émettant de la lumière WO2015114786A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015559681A JPWO2015114786A1 (ja) 2014-01-30 2014-01-30 発光装置
PCT/JP2014/052158 WO2015114786A1 (fr) 2014-01-30 2014-01-30 Appareil émettant de la lumière

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/052158 WO2015114786A1 (fr) 2014-01-30 2014-01-30 Appareil émettant de la lumière

Publications (1)

Publication Number Publication Date
WO2015114786A1 true WO2015114786A1 (fr) 2015-08-06

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Country Status (2)

Country Link
JP (1) JPWO2015114786A1 (fr)
WO (1) WO2015114786A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017122360A1 (fr) * 2016-01-15 2017-07-20 パイオニア株式会社 Dispositif électroluminescent

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193063A (ja) * 2008-01-15 2009-08-27 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
JP2013151644A (ja) * 2005-08-12 2013-08-08 Cambrios Technologies Corp ナノワイヤに基づく透明導電体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013151644A (ja) * 2005-08-12 2013-08-08 Cambrios Technologies Corp ナノワイヤに基づく透明導電体
JP2009193063A (ja) * 2008-01-15 2009-08-27 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017122360A1 (fr) * 2016-01-15 2017-07-20 パイオニア株式会社 Dispositif électroluminescent
JPWO2017122360A1 (ja) * 2016-01-15 2018-11-08 パイオニア株式会社 発光装置

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