WO2015110462A1 - Dielectric composition, dielectric element, electronic component and laminated electronic component - Google Patents
Dielectric composition, dielectric element, electronic component and laminated electronic component Download PDFInfo
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- WO2015110462A1 WO2015110462A1 PCT/EP2015/051123 EP2015051123W WO2015110462A1 WO 2015110462 A1 WO2015110462 A1 WO 2015110462A1 EP 2015051123 W EP2015051123 W EP 2015051123W WO 2015110462 A1 WO2015110462 A1 WO 2015110462A1
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- dielectric
- electronic component
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- 239000000203 mixture Substances 0.000 title claims abstract description 78
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 14
- 239000003985 ceramic capacitor Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 13
- 238000010304 firing Methods 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 239000007858 starting material Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 101100454311 Arabidopsis thaliana LACS8 gene Proteins 0.000 description 1
- 101100063018 Arabidopsis thaliana LCR82 gene Proteins 0.000 description 1
- 101100298220 Arabidopsis thaliana POT1C gene Proteins 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910003451 terbium oxide Inorganic materials 0.000 description 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Definitions
- the present invention relates to a dielectric composition and a dielectric element employing same, and to an electronic component and a laminated electronic component; more specifically, the present invention relates to a dielectric composition, a dielectric element, an electronic component and a laminated electronic component which are advantageously used for medium- and high-voltage applications with a relatively high rated voltage.
- medium- and high-voltage capacitors which are used in devices such as ECMs (engine electronic computer modules), fuel injection devices, electronic control throttles, inverters, converters, HID headlamp units, hybrid engine battery control units and digital still cameras have a rated voltage in excess of 100 V.
- ECMs engine electronic computer modules
- fuel injection devices electronic control throttles
- inverters electronic control throttles
- inverters electronic control throttles
- converters converters
- HID headlamp units hybrid engine battery control units
- digital still cameras have a rated voltage in excess of 100 V.
- Medium- and high-voltage capacitors such as these need a high dielectric constant and high capacitance when a high DC bias is applied.
- Patent Document 1 describes a dielectric composition which contains a main component comprising: barium titanate having an alkali metal oxide content of 0.02 wt% or less; at least one compound selected from among europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, and ytterbium oxide; barium zirconate, magnesium oxide and manganese oxide, said main component being represented by the following compositional formula: ⁇ BaO ⁇ m Ti0 2 + CXR2O3 + ⁇ : ⁇ :03 + yMgO + gMnO (where R2O3 is at least one compound selected from among EU2O3 , Gd 2 03, Tb 2 03, Dy 2 03, H02O3 , Er 2 03, ⁇ 3 ⁇ 4 ⁇ 3 and Yb 2 03,- and , ⁇ , ⁇ , and g represent a mole ratio and are within
- Patent Document 1 JP 3334607 B2
- the aim of the present invention lies in providing a dielectric composition which is advantageously used for medium- and high-voltage applications with a relatively high rated voltage, and which has a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component.
- a direct current electric field which is applied to the dielectric composition, dielectric element, electronic component and laminated electronic component is referred to as a DC (direct current) bias.
- the characteristic of the dielectric constant and capacitance of the dielectric composition etc. varying as a result of a DC bias being applied is referred to as the DC bias characteristics.
- the dielectric composition according to the present invention has a main component composition in accordance with the following formula ( 1 ) :
- a, b, c and d satisfy the following: 0.10 ⁇ a ⁇ 0.65, 0 ⁇ b ⁇ 0.45, 0 ⁇ c ⁇ 0.85, 0 ⁇ d ⁇ 0.20, and
- a, b, c and d represent the number of atoms of Bi, Na, Sr and Mg when there are three oxygen atoms .
- This dielectric composition according to the present invention has the abovementioned constitution, and as a result it is possible to achieve a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/ym is applied.
- a, b, c and d satisfy the following: 0.10 ⁇ a ⁇ 0.65, 0.01 ⁇ b ⁇ 0.45, 0.01 ⁇ c ⁇ 0.85, 0.01 ⁇ d ⁇ 0.16, and 0.95 ⁇ a+b+c ⁇ l .05.
- a dielectric element according to the present invention comprises the abovementioned dielectric composition.
- An electronic component according to the present invention is provided with a dielectric layer comprising the abovementioned dielectric composition.
- a laminated electronic component according to the present invention has a laminated portion formed by alternately laminating an internal electrode layer and a dielectric layer comprising the abovementioned dielectric composition.
- the inventive dielectric element, electronic component and laminated electronic component are advantageously used in a medium- and high-voltage capacitor with a relatively high rated voltage.
- the present invention makes it possible to provide a dielectric composition having a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component.
- dielectric element comprising the abovementioned dielectric composition, electronic component and laminated electronic component, but they are useful in a circuit protection snubber capacitor or smoothing capacitor in which a high dielectric constant is required when a high DC bias is applied.
- the dielectric composition according to the present invention has excellent characteristics without containing lead.
- the inventive dielectric composition, dielectric element, electronic component and laminated electronic component are outstanding from an environmental point of view.
- FIG. 1 is a schematic diagram of a ceramic capacitor according to a mode embodiment of the present invention
- FIG. 2 is a view in cross section of a laminated ceramic capacitor according to a different mode of embodiment of the present invention.
- FIG. 3 is a graph schematically showing both a DC bias characteristics graph in accordance with an exemplary embodiment of the present invention, and a DC bias characteristics graph of a conventional BaTi03 ⁇ based dielectric composition.
- a single-layer ceramic capacitor 100 according to a mode of embodiment of the present invention comprises a disk-shaped dielectric body 1 and a pair of electrodes 2, 3.
- the single-layer ceramic capacitor 100 is obtained by forming the electrodes 2, 3 on both surfaces of the dielectric body 1.
- the shapes of the dielectric body 1 and the electrodes 2, 3. there is no particular limitation as to the dimensions thereof either, and suitable dimensions should be set in accordance with the application.
- the dielectric body 1 is formed by a dielectric composition represented by the following formula (1) .
- a, b, c and d satisfy the following: 0.10 ⁇ a ⁇ 0.65, 0 ⁇ b ⁇ 0.45, 0 ⁇ c ⁇ 0.85, 0 ⁇ d ⁇ 0.20, and
- the dielectric composition according to the present invention has the abovementioned constitution, and as a result it is possible to achieve a relatively high dielectric constant of 800 or greater when a DC bias of 8 V/ym is applied.
- the dielectric according to this mode of embodiment is a combination of ferroelectric compositions, and by providing this specific combination, it is possible to achieve a relatively high dielectric constant of 800 or greater when a DC bias of 8 V/ym is applied.
- a+b+c is less than 0.95 or greater than 1.05, it is not possible to obtain an adequate sintered density and the insulation resistance is reduced, so it is difficult to use the dielectric composition when a high DC bias is applied.
- the content of the main component represented by formula (1) is preferably at least 90 m.cL S S "6 based on the dielectric composition as a whole, from the point of view of obtaining a dielectric constant which is sufficient for practical use as a dielectric composition.
- the dielectric composition may contain one or more oxides of elements selected from: Zn, Mn, Co, Ni, Al and Si, as auxiliary components in addition to the main component.
- the dielectric composition may include impurities such as P and Zr which may become mixed in during the production process.
- the constitution of the dielectric composition may be measured by X-ray fluorescence analysis or by ICP atomic emission spectroscopy.
- the relative density of the abovementioned dielectric composition is preferably 95% or greater when the theoretical density is 100%.
- the relative density refers to the proportion of the actual measured value of the density with respect to the theoretical density.
- the theoretical density of the dielectric composition may be calculated using the lattice constant obtained by means of X-ray diffraction and the stoichiometric ratio obtained on the basis of perfect crystals, for example.
- the actual measured value of the density of the dielectric composition may be obtained by means of the Archimedes method, for example.
- the relative density of the dielectric composition may be adjusted by varying the firing temperature or firing time etc.
- the abovementioned powder starting materials are then weighed out in such a way that the dielectric composition which has been fired (sintered compact) satisfies the composition of the dielectric composition according to this mode of embodiment.
- the weighed starting material powders are then wet-mixed using a ball mill or the like.
- a calcined article is obtained by calcining the mixture obtained by wet-mixing. At this point, the calcination is normally carried out under air.
- the calcination temperature is preferably 700-900°C and the calcination time is preferably 1-10 hours.
- the resulting calcined article is wet-ground in a ball mill or the like, after which it is dried to obtain calcined powder.
- a binder is then added to the resulting calcined powder and press molding is performed to obtain a molded article.
- the binder which may be used provided that it is a binder which is conventionally employed in this technical field.
- a specific example of a binder which may be cited is PVA or the like.
- the amount of binder which is added but an amount of 1-5 wt% is preferably added when the calcined powder is taken as 100 wt%.
- the molding pressure during press molding is preferably of the order of 5> ⁇ 10 2 MPa.
- the shape of the molded article According to this mode of embodiment, a disk shape is formed, but a cuboid shape or another shape may equally be formed. [0039]
- the dielectric body 1 is obtained by firing the resulting molded article.
- the firing is normally carried out under air.
- the firing temperature is preferably 950-1400°C, and the firing time is preferably 2-10 hours.
- the electrodes 2, 3 are then formed on both surfaces of the resulting dielectric body 1.
- the material of the electrodes there is no particular limitation as to the material of the electrodes, and Ag, Au, Cu, Pt, Ni or the like is used.
- the electrodes are formed by means of a method such as vapor deposition, sputtering, printing or electroless plating, but other methods may also be used and there is no particular limitation as to the method of forming the electrodes.
- Fig. 2 is a view in cross section of a laminated ceramic capacitor according to a different mode of embodiment of the present invention.
- a laminated ceramic capacitor 200 according to a mode of embodiment of the present invention comprises a capacitor element main body 5 having a structure in which dielectric layers 7 and internal electrode layers 6A, 6B are alternately stacked.
- a pair of terminal electrodes 11A, 11B which conduct, respectively, with the internal electrode layers 6A, 6B alternately arranged inside the element main body 5 are formed at both ends of the element main body 5.
- the shape of the element main body 5 is normally a cuboid shape.
- the dimensions thereof and suitable dimensions should be set in accordance with the application.
- the dielectric layers 7 comprise the dielectric composition according to the present invention.
- the thickness per layer of the dielectric layers 7 may be freely set and may be 1-100 ym, for example, but there is no particular limitation. [0044]
- the internal electrode layers 6A, 6B are provided in such a way as to be parallel.
- the internal electrode layers 6A are formed in such a way that one end thereof is exposed at the end surface of the laminated body 5 where the terminal electrode 11A is formed.
- the internal electrode layers 6B are formed in such a way that one end thereof is exposed at the end surface of the laminated body 5 where the terminal electrode 11B is formed.
- the internal electrode layers 6A and internal electrode layers 6B are disposed in such a way that the majority thereof is overlapping in the direction of stacking.
- a metal such as Au, Pt or Ag may be used as the material of the internal electrode layers 6A, 6B, for example, but there is no particular limitation and other metals may also be used .
- the terminal electrodes 11A, 11B are provided at the end surfaces of the laminated body 5 in contact with the ends of the internal electrode layers 6A, 6B which are exposed at said end surfaces. As a result, the terminal electrodes 11A, 11B are electrically connected to the internal electrode layers 6A, 6B, respectively.
- the terminal electrode 11A, 11B may comprise a conductive material having Ag, Au, Cu or the like as the main component thereof.
- the thickness of the terminal electrodes 11A, 11B is appropriately set in accordance with the application and the size of the laminated dielectric element, among other things. The thickness may be set at 10-50 ym, but there is no particular limitation . [0047]
- the dielectric composition according to the present invention has a high dielectric constant and capacitance when a high DC bias is applied, and it can therefore be advantageously used for medium- and high-voltage capacitors with a relatively high rated voltage, for example.
- the present invention is not limited to the modes of embodiment described above.
- the dielectric layers comprising the dielectric composition according to the present invention may also be used as a dielectric elements in a semiconductor device etc.
- a known configuration may be freely used in the present invention, other than the dielectric composition.
- the calcined powder may be produced by means of a known method such as hydrothermal synthesis when the ceramic capacitor is produced.
- Bi (Mgo.sTio.s) O3, (Bi 0 .5Nao.5) T1O3 and SrTi03 etc. may also be prepared, mixed and sintered as precursors.
- the dielectric according to this mode of embodiment is a combination of ferroelectric compositions, and by providing this specific combination, it is possible to achieve a relatively high dielectric constant of 800 or greater when a DC bias of 8 V/ym is applied.
- the dielectric composition according to the present invention may also be referred to as a combination of ferroelectric compositions such as Bi (Mgo.sTio.s) O3, (Bio.sNao.s) T1O 3 and SrTi03, for example. It is believed to be possible to provide a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/ym is applied by virtue of this specific combination of ferroelectric compositions .
- the weighed starting material powders were then wet-mixed using a ball mill, after which the resulting mixture was calcined for 2 hours at 850°C under air in order to obtain a calcined article.
- the resulting calcined article was wet- ground in a ball mill to obtain calcined powder.
- 1 wt% of PVA was then added to the calcined powder, taking the calcined powder as 100 wt%, molding was carried out at a pressure of about 5> ⁇ 10 2 MPa, and a disk-shaped molded article having plane dimensions of the order of diameter 17 mm and thickness 1 mm was obtained.
- the resulting molded article was then fired under the air at a firing temperature of 950-1400°C and a firing time of 2-10 hours under conditions such that the relative density was 95% or greater, in order to obtain dielectric composition samples.
- the density of the resulting dielectric samples was measured, the density of all the samples was 95% or greater with respect to the theoretical density.
- compositions of the resulting dielectric composition samples were analyzed.
- the compositions were analyzed by means of X-ray fluorescence analysis. As a result, it was confirmed that the compositions of the sintered compacts were equivalent to the compositions in table 1.
- Ag electrodes were vapor-deposited on both surfaces of the resulting dielectric composition samples in order to produce capacitor samples.
- the dielectric constant ( ⁇ ) at room temperature of 25°C when a DC bias of 8 V/ ⁇ was applied was measured for each of the resulting capacitor samples.
- a DC-voltage power source (Glassman High Voltage, WX10P90) was connected to a digital LCR meter (Hewlett-Packard, 4284A) , and the dielectric constant was measured by said digital LCR meter at room temperature of 25°C while a DC bias of 8 V/ ⁇ was applied.
- the dielectric constant when a DC bias of 8 V/ ⁇ was applied at room temperature of 25°C is shown in table 1 for each exemplary embodiment and comparative example. Furthermore, the bar lines in the table indicate that breakdown occurred when a DC bias of 8 V/ ⁇ was applied and the dielectric constant could not be measured.
- the examples in which the dielectric constant was 800 or greater when a DC bias of 8 V/ ⁇ was applied were deemed to be satisfactory, and those in which the dielectric constant was 900 or greater were deemed to be especially satisfactory.
- the dielectric compositions according to Comparative Examples 1-10 which did not satisfy at least one from among 0.10 ⁇ a ⁇ 0.65, 0 ⁇ b ⁇ 0.45, 0 ⁇ c ⁇ 0.85, 0 ⁇ d ⁇ 0.20, and 0.95 ⁇ a+b+c ⁇ l .05 had a dielectric constant of less than 800 when a DC bias of 8 V/ ⁇ was applied, or it was not possible to measure the dielectric constant.
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Abstract
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KR102098459B1 (en) * | 2015-05-27 | 2020-04-07 | 티디케이 일렉트로닉스 아게 | Bismuth sodium strontium titanate-based dielectric composition, dielectric element, electronic component and multilayer electronic component thereof |
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