WO2015107938A1

WO2015107938A1 - Microstructure and manufacturing method thereof, and composition for manufacture of microstructure

Info

Publication number: WO2015107938A1
Application number: PCT/JP2015/050145
Authority: WO
Inventors: 金子　直人; 章広柴田; 眞哉鈴木; 恭子櫻井; 常元厨川
Original assignee: デクセリアルズ株式会社
Priority date: 2014-01-16
Filing date: 2015-01-06
Publication date: 2015-07-23
Also published as: JP2015134360A

Abstract

This method of manufacturing a microstructure is characterized by involving a Si compound film forming step for formation, on a substrate, of a Si compound film that contains an Si compound and conductive particles, and a processing step for processing the Si compound film by irradiation of the Si compound film with a short-pulse laser.

Description

Fine structure and method for producing the same, and composition for producing fine structure

The present invention relates to a fine structure having a fine structure formed on its surface, a method for producing the same, and a composition for producing a fine structure.

Conventionally, as a nanostructure processing method, a method of forming a nanoscale fine concavo-convex structure on a substrate such as a metal surface or a semiconductor surface by irradiation with a short pulse laser using a laser beam has been proposed ( For example, see Patent Documents 1 to 3 and Non-Patent Documents 1 and 2). In this method, a surface wave is generated by irradiating the substrate with the laser beam, and the surface wave and the laser beam are caused to interfere with each other, thereby forming the fine concavo-convex structure having a wavelength of light. Can be formed. For example, when a metal material is irradiated with a short pulse laser, the surface absorbs laser light, thereby generating an electron density distribution and generating surface plasmons having a period of about the wavelength. A Coulomb explosion occurs at a location where the electron density is high, and a fine periodic structure is formed in the metal material.
However, in this method, when a material that transmits laser such as glass other than metal or semiconductor is used as a base material, surface waves are not generated from the base material. There is a problem that an uneven structure cannot be formed.

Therefore, there has been proposed a method capable of forming the fine concavo-convex structure even when a laser beam is used as a base material made of a material such as glass other than metal and semiconductor.

As a first method, there is a lithography method in which a fine resist pattern is formed on the surface of the substrate and an etching process or the like is performed (see, for example, Patent Document 4).
However, in the case of this lithography method, it is not easy to form the resist pattern at a desired position and a desired size on the substrate, and it is difficult to accurately form a nanoscale fine uneven structure. There's a problem.

As a second method, there is a method in which a pigment is attached to the surface of the base material to form holes in the surface of the base material (see, for example, Patent Document 5).
However, in the case of this method, it is necessary to remove the pigment, the processing time becomes long, and it is difficult to efficiently form a nanoscale fine uneven structure.

As a third method, by using an excimer laser, a polysilazane added with a photopolymerization initiator is irradiated with light in a pattern and cured to obtain a cured film having a desired pattern (for example, a patent) Reference 6).
However, this method has a problem that a resist material must be applied in order to cure the polysilazane by irradiating the excimer laser. In addition, it is not a method for forming the fine concavo-convex structure on the surface of the substrate itself, and it is not always appropriate to use the excimer laser in order to form the fine concavo-convex structure on the surface of the substrate. There is no such thing. Since the excimer laser irradiates continuous light, no pulse is generated, and vibration of electrons cannot be generated. Therefore, there is a problem that it is difficult to efficiently form a pattern on the polysilazane. .

As a fourth method, in order to perform processing using a laser beam on the polysilazane layer, a material layer that absorbs the laser beam is formed under the polysilazane layer that does not absorb the laser beam, and the material layer includes the above-described material layer. There is a method of performing laser processing on the polysilazane layer by ablating the polysilazane layer in contact with the material layer irradiated with the laser beam by irradiating the laser beam (see, for example, Patent Document 7).
However, in this method, in order to ablate the polysilazane layer and perform laser processing, the presence of the material layer is necessary, and an extra layer for one layer must be included on the substrate. There's a problem.

Therefore, there is a demand for the development of a technology that can efficiently and accurately manufacture a fine structure having a nanoscale uneven structure by using an appropriate laser.

JP 2006-235195 A JP 2010-152296 A JP 2003-211400 A JP 2006-346748 A JP 2002-028799 A Japanese Patent Laid-Open No. 11-92666 JP 2008-114250 A

This invention makes it a subject to solve the said various problems in the past and to achieve the following objectives. That is, according to the present invention, a fine structure having a fine structure such as a nanoscale uneven structure on the surface, and the fine structure can be produced efficiently and accurately with as little energy as possible by using an appropriate laser. It is an object of the present invention to provide a method for producing a microstructure, and a composition for producing a microstructure suitable for use in the microstructure and the method for producing the microstructure.

Means for solving the problems are as follows. That is,
<1> A Si compound film forming step for forming a Si compound film containing a Si compound and conductive fine particles on a substrate; and the Si compound film is irradiated with a short pulse laser to process the Si compound film. The manufacturing method of the fine structure characterized by including a processing process.
In the microstructure manufacturing method of the present invention, in the Si compound film forming step, a Si compound film containing the Si compound and the conductive fine particles is formed on the substrate. In the processing step, the Si compound film is irradiated with a short pulse laser to process the Si compound film. In the processing step, when the Si compound film is irradiated with the short pulse laser, electrons move in position by the Si compound in the Si compound film or the conductive fine particles, and the short pulse laser is irradiated. When not, electrons try to return to the original position by the Si compound in the Si compound film or the conductive fine particles. By repeating the repetition at an extremely short period, effective vibration of electrons can be caused. Due to the vibration of the electrons, a surface wave is generated, and the surface wave and the short pulse laser interfere with each other to perform processing. Further, since the laser applied to the Si compound film is a short pulse, strong energy can be applied, so that the Si compound film can be processed. The fine structure can be manufactured easily and efficiently by the processing step.
<2> The method for producing a microstructure according to <1>, wherein a pulse width in the short pulse laser is 0.01 ps to 100 ps.
<3> The method for producing a microstructure according to any one of <1> to <2>, wherein the Si compound is polysilazane.
<4> The method for producing a microstructure according to any one of <1> to <3>, wherein the conductivity of the conductive fine particles is greater than 2.5 × 10 ⁻⁴ [S / m].
<5> The method for producing a microstructure according to any one of <1> to <4>, wherein an average particle diameter of the conductive fine particles in the Si compound film is 1,000 nm or less.
<6> The method for producing a microstructure according to any one of <1> to <5>, wherein the wavelength of the short pulse laser is 266 nm to 1,570 nm.
<7> A microstructure produced by the method for producing a microstructure according to any one of <1> to <6>.
<8> A composition for producing a fine structure, which is used in the method for producing a fine structure according to any one of <1> to <6> and contains a Si compound and conductive fine particles. is there.

According to the present invention, the conventional problems can be solved, and a fine structure having a fine structure such as a nanoscale uneven structure on the surface, and the fine structure using an appropriate laser, It is possible to provide a method for producing a fine structure that can be produced efficiently and accurately with as little energy as possible, and a fine structure and a composition for producing a fine structure suitable for use in the production method.

FIG. 1 is a schematic diagram of an example of a laser irradiation apparatus that irradiates a short pulse laser used in the present invention. FIG. 2 is an SEM photograph after the microstructure formation is continued in Example 5 of the present invention. FIG. 3 is a SEM photograph after the fine structure formation is continued in Example 8 of the present invention.

(Fine structure and method for producing the same, and composition for producing fine structure)
The microstructure manufacturing method of the present invention includes at least a Si compound film forming step and a processing step, and further includes other steps as necessary.
The microstructure of the present invention is a microstructure manufactured by the method for manufacturing a microstructure of the present invention.

<Si compound film formation process>
The Si compound film forming step is a step of forming a Si compound film containing a Si compound and conductive fine particles on a base material.

<< Base material >>
There is no restriction | limiting in particular as said base material, The material, a shape, a structure, a magnitude | size etc. can be suitably selected according to the objective.
There is no restriction | limiting in particular as a material of the said base material, According to the objective, it can select suitably, For example, ceramics, a metal, a semiconductor, DLC (diamond like carbon) etc. are mentioned.

There is no restriction | limiting in particular as said ceramics, According to the objective, it can select suitably, For example, glass, a metal oxide, a metal nitride, a carbide | carbonized_material, a boride etc. are mentioned.
There is no restriction | limiting in particular as said glass, According to the objective, it can select suitably, For example, blue plate glass, white plate glass, quartz glass etc. are mentioned. Among these, quartz glass is preferable in terms of heat resistance temperature. Further, the use of the glass as a base material has the advantage that the glass can be applied to an optical member such as a windshield of an automobile and a surface glass of a heat absorption tube of solar thermal power generation because of the high transparency of the glass. .
The metal oxide is not particularly limited and may be appropriately selected depending on the purpose, for example, silica _(SiO 2), alumina _(Al _{2 O} 3), zirconia _(ZrO 2), titania _(TiO 2) Etc.
There is no restriction | limiting in particular as said metal nitride, According to the objective, it can select suitably, For example, a gallium nitride (GaN) etc. are mentioned.
As the carbide is not particularly limited and may be appropriately selected depending on the purpose, for example, silicon carbide (SiC), boron carbide _(B 4 C), and the like calcium carbide (CaC _2).
As the boride not be particularly limited and may be appropriately selected depending on the purpose, for example, aluminum boride (AlB _2), and the like magnesium diboride (MgB _2).
There is no restriction | limiting in particular as said metal, According to the objective, it can select suitably, For example, stainless steel, iron, copper, titanium, platinum, gold | metal | money, silver, nickel, chromium, palladium etc. are mentioned.
Moreover, as said base material, the material illustrated above may be used individually by 1 type, 2 or more types may be used together, and what was synthesize | combined suitably may be used, and it is a commercial item. It may be.

There is no restriction | limiting in particular as a shape of the said base material, According to the objective, it can select suitably, For example, plate shape, spherical shape, etc. are mentioned.
There is no restriction | limiting in particular as a structure of the said base material, According to the objective, it can select suitably, For example, the structure comprised by the single structure and the some material etc. are mentioned.
There is no restriction | limiting in particular as a structure comprised by the said several material, According to the objective, it can select suitably, For example, a single layer, laminated | stacked, a mixed layer etc. are mentioned.
There is no restriction | limiting in particular as a magnitude | size of the said base material, For example, according to the objective, it can select suitably according to the magnitude | size in the use of fine structures, such as a windshield of a motor vehicle.

<< Si compound film >>
The Si compound film contains at least the Si compound and the conductive fine particles, and further contains other components as necessary. However, the Si compound film does not contain a resist material.
The Si compound film can be suitably formed by the microstructure manufacturing composition of the present invention.

<< Composition for microstructure production >>
The composition for producing a fine structure contains at least the Si compound and the conductive fine particles, and further contains other components as necessary.

--Si compound--
The Si compound is not particularly limited as long as it contains Si, and can be appropriately selected according to the purpose. However, it can be converted into glass by applying light or heat energy, or A material that can be converted into glass by reacting with oxygen or a substance having an oxygen atom is preferable, and examples thereof include polysilazane and polysiloxane. Among these, polysilazane is preferable and perhydropolysilazane (PHPS) is more preferable in terms of conversion to glass having excellent optical properties.
As said Si compound, what was illustrated above may be used individually by 1 type, 2 or more types may be used together, and what was synthesize | combined suitably may be used, and it may be a commercial item. May be.

In addition, there is no restriction | limiting in particular as a method to provide the said energy to the said Si compound, According to the objective, it can select suitably, For example, the method of irradiating a laser, the method of baking, etc. are mentioned.
Depending on the energy of the laser irradiation, the Si compound film can be converted into glass, but the Si compound film can be completely converted into glass by further performing a baking process described later. Can do.
Since the glass has excellent optical characteristics, it has an advantage that it can be applied to an optical member such as a windshield of an automobile and a surface glass of a heat absorption tube of solar thermal power generation.

--Conductive fine particles--
The conductive fine particles are not particularly limited, and the material, shape, size, structure, and the like can be appropriately selected depending on the purpose. For example, the material is preferably a transition metal or the like. .
The conductivity in the present invention means having a conductivity higher than that of Si. The conductivity of the conductive fine particles is not particularly limited and may be appropriately selected depending on the intended purpose. However, it is preferably more than 2.5 × 10 ⁻⁴ [S / m], and 1 × 10 ^6. [S / m] or more is more preferable.

There is no restriction | limiting in particular as said transition metal, According to the objective, it can select suitably, For example, Au, Ag, Cu, Pd, Pt, Ni, Ti, Cr, Ph etc. are mentioned.
Further, as the material of the conductive fine particles, those exemplified above may be used alone, in combination of two or more, or may be appropriately synthesized, Commercial products may be used.

The shape of the conductive fine particles is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include spherical shapes, wire shapes, needle shapes, and irregular shapes.

There is no restriction | limiting in particular as an average particle diameter of the said electroconductive fine particle, Although it can select suitably according to the objective, 1,000 nm or less is preferable, 200 nm or less is more preferable, 150 nm or less is especially preferable.
When the average particle diameter of the conductive fine particles exceeds 150 nm, the fine structure may be difficult to be formed.
The method for measuring the average particle diameter of the conductive fine particles is not particularly limited and may be appropriately selected depending on the intended purpose. For example, the dynamic light scattering method, laser diffraction method, image imaging method, gravity precipitation method Etc.

There is no restriction | limiting in particular as a structure of the said electroconductive fine particles, According to the objective, it can select suitably, For example, it may be formed with the single member and may be formed with 2 or more types of members. In the latter case, for example, a core-shell structure may be used.

The content of the conductive fine particles in the Si compound film is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 0.01% by mass to 10% by mass, preferably 0.04% by mass. More preferably, 1% by mass.
When the content of the conductive fine particles in the Si compound film is less than 0.01% by mass, the number of times of irradiation with the short pulse laser cannot be reduced. When the content exceeds 10% by mass, coloring from the conductive fine particles and Haze may occur.

-Other ingredients-
There is no restriction | limiting in particular as said other component, According to the objective, it can select suitably, For example, a solvent etc. are mentioned.
There is no restriction | limiting in particular as said solvent, According to the objective, it can select suitably, For example, an organic solvent etc. are mentioned.
There is no restriction | limiting in particular as said organic solvent, According to the objective, it can select suitably, For example, xylene, dibutyl ether, dimethyl ether, diethyl ether etc. are mentioned.

--Formation of Si compound film--
Examples of the method of forming the Si compound film include a method of applying a composition for manufacturing a microstructure containing the Si compound, the conductive fine particles, and the solvent on the substrate.
Moreover, the method for applying the composition for producing a microstructure on the substrate is not particularly limited and can be selected according to the purpose. For example, a roll coating method, a spray coating method, a coating method. , Spin coating method, bar coating method, curtain coating method, die coating method, dip coating method and the like.

--Average thickness of Si compound film--
The average thickness of the Si compound film is not particularly limited and can be selected according to the purpose, but is preferably 100 nm to 5 μm.
If the average thickness is less than 100 nm, it is difficult to form a fine periodic structure on the surface, and if it exceeds 5 μm, cracks may occur when the Si compound film is converted to glass.
The method for measuring the average thickness is not particularly limited and can be selected according to the purpose. For example, reflectance spectroscopy, interference interval method, frequency analysis method, stylus method, cross-sectional SEM observation, cross-sectional TEM observation Etc.

<Processing process>
The processing step is a step of processing the Si compound film by irradiating the Si compound film with a short pulse laser.

<< Short pulse laser >>
The short pulse laser means a pulse laser having a short emission time (interval) (several picoseconds to several femtoseconds).
In order to irradiate the short pulse laser, a laser irradiation apparatus is generally used. By irradiating the Si compound film with a short pulse laser having a predetermined wavelength using the laser irradiation apparatus, a periodic structure having a predetermined wavelength size or a size smaller than the predetermined wavelength can be formed in the laser irradiation region.
When the Si compound film is irradiated with the short pulse laser, electrons move in the Si compound in the Si compound film or the conductive fine particles, and when the short pulse laser is not irradiated, The electrons try to return to the original position by the Si compound in the Si compound film or the conductive fine particles. By repeating this, vibration of electrons can be caused. Due to the vibration of the electrons, a surface wave is generated, and the surface wave and the short pulse laser interfere with each other to perform processing. Further, since the laser applied to the Si compound film is a short pulse, strong energy can be applied, so that the Si compound film can be processed.
In the present invention, a commercially available product can be used as the laser irradiation device.

-Laser irradiation device-
An outline of a laser irradiation apparatus for emitting the short pulse laser is shown in FIG. For example, the laser body 1 emits laser light that is directly polarized in the vertical direction (sometimes referred to as laser light), and rotates the polarization direction using a wave plate 2 (λ / 2 wave plate). Direct polarization in the desired direction can be obtained. Further, circularly polarized light can be obtained by using a λ / 4 wavelength plate instead of the λ / 2 wavelength plate. Further, in the present apparatus, a part of the laser beam is extracted using the aperture 3 having a square opening. This is because the intensity distribution of the laser beam is a Gaussian distribution, and the laser beam having a uniform in-plane intensity distribution is obtained by using only the vicinity of the center. Further, in this apparatus, a desired beam size can be obtained by narrowing down the laser beam using two orthogonal cylindrical lenses 4. The laser beam having a desired beam size is applied to the sample 5 on the linear stage 6.

The control factor of the short pulse laser is not particularly limited and can be selected according to the purpose. Examples thereof include wavelength, fluence, number of irradiation pulses, pulse width, beam spot, and the like.

-wavelength-
The wavelength is not particularly limited and can be appropriately selected from a range of 266 nm to 1,570 nm according to a desired periodic structure. A wavelength in the range of 266 nm to 800 nm is preferable. More preferably, the wavelength is in the range of 390 nm to 800 nm. For example, the wavelength of the short pulse laser can take a value appropriately selected according to a desired periodic structure such as 800 nm, 400 nm, and 266 nm.

-Fluence-
The fluence is energy density E / S (J / cm ² ) obtained by dividing the energy E (J) per pulse of the laser by the irradiation sectional area S (cm ² ). Range of predetermined fluence varies depending on the ^{material, 0.01J / cm 2 ~ 1.0J /} cm 2 is preferred.
The value of the fluence is less than 0.01 J / cm ^2, may be unable to form a fine structure, exceeding 1.0 J / cm ^2, sometimes the fine structure disappears.

-Number of irradiation pulses-
The number of irradiation pulses depends on the fluence and the processing depth of the periodic structure, but is preferably as small as possible in order to shorten the processing time.
In the embodiment of the present invention, since the necessary number of irradiation pulses is controlled by the pulse frequency, it takes a discrete value. In addition, the said irradiation pulse number n (times) can be represented by the following formula | equation (1) using the said pulse frequency f (Hz).
n = 1 / f (1)

-pulse width-
The pulse width is not particularly limited and may be appropriately selected depending on the intended purpose. However, a shorter one is preferable, and 0.01 picosecond (ps) to 100 picosecond (ps) is preferable.
If the pulse width value is less than 0.01 picosecond (ps), a fine structure may not be formed, and if it exceeds 100 picosecond (ps), a fine structure may not be formed.

-Beam spot-
The beam spot preferably has a quadrangular shape. The beam spot can be shaped by using, for example, an aperture or a cylindrical lens. Further, it is preferable that the intensity distribution of the laser beam in the beam spot is as uniform as possible.
The beam spot diameter is not particularly limited and may be appropriately selected depending on the intended purpose. For example, it is preferably 30 μm to 500 μm.

<Other processes>
There is no restriction | limiting in particular as said other process, According to the objective, it can select suitably, For example, a washing | cleaning process, a baking process, an oxidation treatment process, etc. are mentioned.

<< Baking process >>
The firing step is a step of firing the Si compound film after irradiating the Si compound film with a short pulse laser.
The firing step is performed when the Si compound film is completely converted into glass.
The firing temperature in the firing step is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 200 ° C. to 1,600 ° C.
There is no restriction | limiting in particular as baking time in the said baking process, Although it can select suitably according to the objective, Generally the time of the grade which can fully vitrify Si compound film is preferable.

--- Applications of microstructures--
The use of the microstructure of the present invention is not particularly limited and can be appropriately selected according to the purpose. When the substrate is glass, it can be suitably used as an optical member. Preferred examples include a windshield of a car and a surface glass of a heat absorption tube of solar power generation.

Hereinafter, examples of the present invention will be described in detail, but the present invention is not limited to these examples.

In this embodiment, a Si compound film is formed on a substrate and irradiated with a short pulse laser. Thereafter, the microstructure was subjected to surface observation and elemental analysis using a field emission scanning electron microscope (FESEM: Field Emission-Scanning Electron Microscope, Hitachi S-4700 type).

Example 1
Perhydropolysilazane (trade name: Aquamica NN120, manufactured by Clariant) as the Si compound 99.96 parts by mass (excluding the solvent component) and gold particles (product name: AuDT, manufactured by Tanaka Kikinzoku Co., Ltd.), (Average particle diameter; 3 nm) 0.04 parts by mass was mixed to prepare a composition for producing a fine structure.
A plate-like glass (S9112, manufactured by Matsunami Glass Co., Ltd.) is used as the substrate, and the fine structure manufacturing composition is applied onto the substrate using a bar coater, and the average thickness is 1,500 nm. A compound film was formed. Thereafter, the Si compound film was irradiated with a short pulse laser from the Si compound film side under the following irradiation conditions.
The average thickness of the Si compound film was measured using a film thickness measurement system (F20, manufactured by Filmetrics).
<Irradiation conditions>
Device: IFRIT (manufactured by Cyber Laser)
Fluence: 0.12 J / cm ²
Pulse width: 200 fs
Frequency: 1kHz
Wavelength: 390 nm
Beam spot: 300 μm × 120 μm

<Evaluation>
<< Number of irradiation pulses necessary for formation of fine structure >>
The number of irradiation pulses is controlled by the pulse frequency. Therefore, the number of irradiation pulses was performed a predetermined number of times. The number of irradiation pulses in this example was 8, 16, 33, 66, 125, 250, 500, 1,000, 2,000, and 4,000.
SEM observation was performed after irradiation with the number of irradiation pulses described above, and the minimum number of irradiation pulses in which a fine structure with an average maximum diameter of 150 nm to 500 nm was observed was defined as the necessary number of irradiation pulses. The results are shown in Table 1.

<< Appearance coloring >>
The appearance coloring of the Si compound film after irradiation with a short pulse laser having the required number of irradiation pulses was visually observed. The results are shown in Table 1.

(Examples 2 to 21)
Example 1 is the same as Example 1 except that the type of conductive fine particles in the Si compound film, the content of the conductive fine particles, and the average particle diameter of the conductive fine particles are changed as shown in Table 1. A fine structure was manufactured and the same evaluation as in Example 1 was performed. The results are shown in Table 1. Moreover, the SEM photograph after continuing formation of a fine structure in Example 5 and 8 is shown to FIG. 2 and 3, respectively.

(Comparative Example 1)
In Example 1, except that no Si compound film was formed on the substrate, the substrate was irradiated with a short pulse laser in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Table 1.

(Comparative Example 2)
In Example 1, a fine structure was produced in the same manner as in Example 1 except that the conductive fine particles were not used, and evaluation was performed in the same manner as in Example 1. The results are shown in Table 1.

(Comparative Examples 3 to 6)
In Example 2, the fine structure was produced in the same manner as in Example 2 except that the type of fine particles and the content of the fine particles were changed as shown in Table 1, and the same evaluation as in Example 2 was performed. went. The results are shown in Table 1.

The product names and manufacturing company names of the fine particles used in the examples and comparative examples are described below.
Au (3 nm): AuDT, manufactured by Tanaka Kikinzoku Co., Ltd. (conductive fine particles; 48.78 × 10 ⁶ [S / m])
Au (75 nm): Gold, manufactured by Iritech Co. (conductive fine particles; 48.78 × 10 ⁶ [S / m])
Ag: Silver, manufactured by Iritech (conductive fine particles; 25 × 10 ⁶ [S / m])
Pd: Palladium fine particles, manufactured by QuantumSphere Inc. (conductive fine particles; 10 × 10 ⁶ [S / m])
Cu: Copper, manufactured by Iritech Co. (conductive fine particles; 64.5 × 10 ⁶ [S / m])
Si: Silicon, manufactured by Iritech (non-conductive fine particles; 2.5 × 10 ⁻⁴ [S / m])
TiO ₂ : Super Titania F-6, manufactured by Showa Denko KK (non-conductive fine particles; 10 ⁻¹² [S / m])
SiO ₂ : AEROSIL RX200; manufactured by Nippon Aerosil Co., Ltd. (non-conductive fine particles; 10 ⁻¹⁴ [S / m])

By adding the conductive fine particles to perhydropolysilazane, the necessary number of irradiation pulses could be reduced.
In addition, when the material of the conductive fine particles with respect to the Si compound is Au, Ag, or Cu, the necessary number of pulses can be reduced as compared with the case of Pd. This is because the conductivity of Au (48.78 × 10 ⁶ [S / m]), Ag (25 × 10 ⁶ [S / m]), Cu (64.5 × 10 ⁶ [S / m]) This is considered to be because it is larger than that of Pd (10 × 10 ⁶ [S / m]).
In Comparative Example 1, no fine structure was formed even when the number of irradiation pulses was 4,000.

The fine structure manufacturing method of the present invention is capable of manufacturing a fine structure efficiently and accurately with as little energy as possible by using an appropriate laser. Therefore, the surface of an automobile windshield or solar power generation heat absorption tube It can use suitably for manufacture of microstructures, such as optical members like glass.

1 Laser body 2 Wave plate 3 Aperture 4 Cylindrical lens 5 Sample 6 Linear stage

Claims

A Si compound film forming step of forming a Si compound film containing a Si compound and conductive fine particles on a substrate; a processing step of irradiating the Si compound film with a short pulse laser to process the Si compound film; The manufacturing method of the fine structure characterized by including.
The method for producing a fine structure according to claim 1, wherein the pulse width of the short pulse laser is 0.01 ps to 100 ps.
The method for producing a fine structure according to any one of claims 1 to 2, wherein the Si compound is polysilazane.
The method for producing a microstructure according to any one of claims 1 to 3, wherein the conductivity of the conductive fine particles is more than 2.5 × 10 -4 [S / m].
The method for producing a fine structure according to any one of claims 1 to 4, wherein the average particle diameter of the conductive fine particles in the Si compound film is 1,000 nm or less.
6. The method for producing a fine structure according to claim 1, wherein the wavelength of the short pulse laser is 266 nm to 1,570 nm.
A microstructure produced by the method for producing a microstructure according to any one of claims 1 to 6.
A composition for producing a fine structure, which is used in the method for producing a fine structure according to any one of claims 1 to 6 and contains a Si compound and conductive fine particles.