WO2015067835A3 - Dispositivo fotovoltaico de capa fina y procedimiento de fabricación de dicho dispositivo - Google Patents

Dispositivo fotovoltaico de capa fina y procedimiento de fabricación de dicho dispositivo Download PDF

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Publication number
WO2015067835A3
WO2015067835A3 PCT/ES2014/070827 ES2014070827W WO2015067835A3 WO 2015067835 A3 WO2015067835 A3 WO 2015067835A3 ES 2014070827 W ES2014070827 W ES 2014070827W WO 2015067835 A3 WO2015067835 A3 WO 2015067835A3
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WO
WIPO (PCT)
Prior art keywords
thin
manufacturing process
photovoltaic device
film photovoltaic
cavities
Prior art date
Application number
PCT/ES2014/070827
Other languages
English (en)
French (fr)
Other versions
WO2015067835A2 (es
Inventor
Jesús Lama Ochoa De Retana
Isabel Gil Lorente
Original Assignee
Sgenia Soluciones
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sgenia Soluciones filed Critical Sgenia Soluciones
Publication of WO2015067835A2 publication Critical patent/WO2015067835A2/es
Publication of WO2015067835A3 publication Critical patent/WO2015067835A3/es

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Una célula solar de capa fina fabricada mediante depósito de un electrodo anterior (3), un elemento fotoactivo (2) y un electrodo posterior (1) sobre un sustrato (4) transparente. Sobre la superficie del electrodo anterior (3) se graba mediante interferometría láser una red periódica de cavidades nanométricas, que se rellenan con un material semiconductor del elemento fotoactivo (2). La red de cavidades actúa como cristal fotónico, mejorando simultáneamente el atrapamiento de la luz incidente y la eficiencia cuántica del dispositivo.
PCT/ES2014/070827 2013-11-06 2014-11-06 Dispositivo fotovoltaico de capa fina y procedimiento de fabricación de dicho dispositivo WO2015067835A2 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ES201331617A ES2466515B1 (es) 2013-11-06 2013-11-06 Dispositivo fotovoltaico de capa fina con estructura de cristal fotónico y comportamiento como sistema de confinamiento cuántico, y su procedimiento de fabricación
ESP201331617 2013-11-06

Publications (2)

Publication Number Publication Date
WO2015067835A2 WO2015067835A2 (es) 2015-05-14
WO2015067835A3 true WO2015067835A3 (es) 2015-07-02

Family

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PCT/ES2014/070827 WO2015067835A2 (es) 2013-11-06 2014-11-06 Dispositivo fotovoltaico de capa fina y procedimiento de fabricación de dicho dispositivo

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ES (1) ES2466515B1 (es)
WO (1) WO2015067835A2 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600086109A1 (it) * 2016-08-19 2018-02-19 Goal S R L Pellicola a cristalli fotonici ad alto valore di conversione energetica di particolare applicazione nelle celle solari al silicio nelle celle solari organiche nelle celle solari multigiunzione e nei film sottili fotovoltaici.

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437886B1 (ko) * 2001-09-25 2004-06-30 한국과학기술원 고발광효율 광결정 유기발광소자
WO2006078319A1 (en) 2005-01-19 2006-07-27 Massachusetts Institute Of Technology Light trapping in thin film solar cells using textured photonic crystal
US20070012355A1 (en) 2005-07-12 2007-01-18 Locascio Michael Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material
US20070235072A1 (en) 2006-04-10 2007-10-11 Peter Bermel Solar cell efficiencies through periodicity
US7893348B2 (en) 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
US20080110486A1 (en) 2006-11-15 2008-05-15 General Electric Company Amorphous-crystalline tandem nanostructured solar cells
CN101304058B (zh) * 2007-05-09 2010-05-26 清华大学 发光二极管
US20110139233A1 (en) 2009-12-11 2011-06-16 Honeywell International Inc. Quantum dot solar cell
KR100873517B1 (ko) * 2007-11-21 2008-12-15 한국기계연구원 유기발광소자
ES2346614B1 (es) 2008-04-29 2011-10-03 Consejo Superior De Investigaciones (Csic) Uso de material modificado en su topografia superficial en dispositivos que generen una corriente electrica a partir de luz incidente.
US8415691B2 (en) * 2008-08-18 2013-04-09 Tsmc Solid State Lighting Ltd. Omnidirectional reflector
US20110247676A1 (en) 2008-09-30 2011-10-13 The Regents Of The University Of California Photonic Crystal Solar Cell
US20110180133A1 (en) 2008-10-24 2011-07-28 Applied Materials, Inc. Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
US20100282304A1 (en) * 2008-11-18 2010-11-11 Industrial Technology Research Institute Solar cell and method of manufacturing the same
US20110155215A1 (en) 2009-12-31 2011-06-30 Du Pont Apollo Limited Solar cell having a two dimensional photonic crystal
RU2012132959A (ru) * 2010-01-07 2014-02-27 Шарп Кабусики Кайся Элемент фотоэлектрического преобразования
WO2011102956A2 (en) * 2010-02-22 2011-08-25 University Of Delaware Photonic crystal enhanced light trapping solar cell
US20130288425A1 (en) * 2011-08-05 2013-10-31 Solexel, Inc. End point detection for back contact solar cell laser via drilling

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EISELE C ET AL: "LIGHT TRAPPING BY PERIODICALLY STRUCTURED TCO IN THE SUB-MICROMETER RANGE", AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS - 2000. SAN FRANCISCO, CA, APRIL 24 - 28, 2000; [MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. VOL. 609. (MRS)], WARRENDALE, PA : MRS, US, vol. VOL. 609, 24 April 2000 (2000-04-24), pages A30.6.01 - A30.6.06, XP001134708, ISBN: 978-1-55899-517-8 *
SEBASTIAN ECKHARDT ET AL: "Light Management of Aluminum Doped Zinc Oxide Thin Films by Fabricating Periodic Surface Textures Using Direct Laser Interference Patterning", ADVANCED ENGINEERING MATERIALS, 21 May 2013 (2013-05-21), pages 941 - 947, XP055188924, ISSN: 1438-1656, DOI: 10.1002/adem.201300007 *

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Publication number Publication date
ES2466515A1 (es) 2014-06-10
WO2015067835A2 (es) 2015-05-14
ES2466515B1 (es) 2015-03-23

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