WO2015066939A1 - 调节激光频率的方法及激光频率调节系统 - Google Patents

调节激光频率的方法及激光频率调节系统 Download PDF

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WO2015066939A1
WO2015066939A1 PCT/CN2013/087012 CN2013087012W WO2015066939A1 WO 2015066939 A1 WO2015066939 A1 WO 2015066939A1 CN 2013087012 W CN2013087012 W CN 2013087012W WO 2015066939 A1 WO2015066939 A1 WO 2015066939A1
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Prior art keywords
laser pulse
sub
laser
mirror
transmitted
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French (fr)
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张翔
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/126,433 priority Critical patent/US9235052B2/en
Publication of WO2015066939A1 publication Critical patent/WO2015066939A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat

Definitions

  • the present invention relates to flat panel display, and more particularly to an adjustment laser frequency-laser frequency adjustment system.
  • the traditional video image display is mainly the cathode ray tube CRT (Cartiode ray iubes); and the main difference between the flat panel display is the change in weight and the aspect.
  • the thickness of the display is not more than 10 cm, of course, there are other differences. , such as the display principle, manufacturing, materials, technology and video image display drive technology.
  • Flat panel displays are fully planarized. Light, straight and power-saving, and the development of high resolution, low power consumption, high integration, but the traditional amorphous silicon is limited by its own characteristics can not meet the above requirements, as the best satisfaction of amorphous silicon
  • the flat panel shows the demand for He Liang, so low temperature polysilicon (ITPS) display technology has become the darling of the display field.
  • ITPS low temperature polysilicon
  • polysilicon preparation methods include: low pressure chemical gas phase deposition (LPCVD), solid phase crystallization, metal induction, and laser annealing.
  • LPCVD low pressure chemical gas phase deposition
  • solid phase crystallization solid phase crystallization
  • metal induction metal induction
  • laser annealing the most widely used preparation method in the industry is laser annealing, which melts and recrystallizes amorphous silicon by high temperature generated by laser.
  • the parameters of can optimize the crystallization effect, due to the limitations of the machine specifications, the parameters that can be modulated and their range, such as the laser frequency, make us unable to conduct more in-depth research on the crystallization process and effects of polysilicon.
  • FIG. 1 it is a schematic diagram of a laser pulse optical path in the prior laser annealing process.
  • the original laser pulse 100 passes through a beam splitter 200 , the original laser pulse 100 is split into two sub-laser pulses 101 , 102 , a sub-laser .
  • the energy of the pulses 101, 102 is 50% of the original laser pulse 100, wherein the sub-laser pulse 101 is reflected by the four mirrors 300 and transmitted back to the beam splitter 200, superimposed with the sub-laser pulse 102, due to passing through the beam splitter
  • the sub-laser pulses 101, 102 after 200 have a downward shift distance in the vertical direction, and therefore, the superimposed laser pulses 103 are adjusted to the original vertical position by the compensation sheet 400.
  • the sub-laser pulse 101 is transmitted at a longer distance than the sub-laser pulse 102, so it will exist with the sub-laser pulse 102.
  • the time delay, the sub-laser pulse 101 and the sub-laser pulse 102 are finally superimposed to form the laser pulse 104 shown in the above figure. Due to the limitation of the machine specification, the positions of the four mirrors 300 as shown in Fig. i are all fixed, and can no longer be After the adjustment, the laser pulse 104 finally formed is in a fixed form, and the crystallization process and effect of the polysilicon cannot be further improved.
  • the optical path difference is to become two distinct discrete sub-laser pulses, and finally the frequency adjustment of the laser is achieved by superposition of the two.
  • Another object of the present invention is to provide a laser frequency adjustment system, which can increase the optical range of the laser pulse by increasing the optical path lengthening device, and can effectively widen the frequency range of the laser pulse, and the substrate can be accepted in the same time. More laser irradiation can further improve the crystallization effect of polysilicon
  • the present invention provides a method of adjusting a laser frequency, comprising the steps of:
  • Step 1 providing a raw laser pulse
  • Step 2 dividing the original laser pulse into a first sub-laser pulse and a second sub-laser pulse respectively transmitted in two directions by using a spectroscope;
  • Step 3 using a plurality of mirrors to reflect the first sub-laser pulse to the exit of the second sub-laser pulse on the beam splitter, and during the transmitting of the first sub-laser pulse, pass the first sub-laser pulse through a light Extended device
  • Step 4 the first sub-laser pulse is reflected by the spectroscope and has the same transmission direction as the second sub-laser pulse, and is superimposed with the second sub-laser pulse, and the transmission direction of the laser pulse formed by the superimposition of the compensation sheet is used. Make adjustments.
  • the first sub-laser pulse is formed by partially reflecting a primary laser pulse on a spectroscope
  • the second sub-laser pulse is formed by a portion of the original laser pulse passing through the spectroscope, and is adjusted by adjusting a reflection coefficient of the spectroscope.
  • the energy ratio of the first sub-laser pulse and the second sub-laser pulse to the original laser pulse is adjusted by adjusting a reflection coefficient of the spectroscope.
  • the energy of the first sub-laser pulse is 50% of the energy of the original laser pulse
  • the energy of the second sub-laser pulse is 50% of the energy of the original laser pulse
  • the optical path extending device includes: an optical crystal and a high transmittance anti-reflection layer disposed at two ends of the optical crystal, wherein the first sub-laser pulse is incident from a high transmittance anti-reflection layer at one end of the optical crystal, and The high transmittance antireflection layer at the other end of the optical crystal exits.
  • the optical crystal is an optical crystal having an electrooptic effect, and the optical crystal has a corresponding wavelength
  • the refractive index at a laser of 308 nm is greater than 3, and the high transmittance antireflection layer is made of MgF 2 or Al 2 0 3 .
  • the number of the mirrors is four, which are first to fourth mirrors respectively, and the first sub-laser pulse is emitted from the spectroscope, reflected by the first mirror, and then transmitted to the third mirror, and after the third reflection
  • the mirror is reflected and transmitted to the optical path extending device, passes through the optical path extending device, is transmitted to the second mirror, is reflected by the second mirror, and then transmitted to the fourth mirror, and is reflected by the fourth mirror.
  • a certain angle is transmitted to the exit of the second sub-laser pulse on the beam splitter to be superimposed with the second sub-laser pulse.
  • the laser pulse formed by superposing the first sub-laser pulse and the second sub-laser pulse is adjusted by the compensation sheet, and has the same transmission direction as the original laser pulse, and is at the same level.
  • the invention also provides a method of adjusting the laser frequency, comprising the steps of:
  • Step 1 providing a raw laser pulse
  • Step 2 dividing the original laser pulse into a first sub-laser pulse and a second sub-laser pulse respectively transmitted in two directions by using a spectroscope;
  • Step 3 using a plurality of reflex mirrors to reflect the first sub-laser pulse to the exit of the second sub-laser pulse on the spectroscope, and during the transmission of the first sub-laser pulse, pass the first sub-laser pulse through a light Extended device
  • Step 4 The first sub-laser pulse is reflected by the beam splitter and has the same transmission direction as the second sub-laser pulse, and is superimposed with the second sub-laser pulse, and the compensation direction is used to adjust the transmission direction of the superposed laser pulse;
  • the optical path extending device includes: an optical crystal and a high transmittance anti-reflection layer disposed at two ends of the optical crystal, wherein the first sub-laser pulse is incident from a high transmittance anti-reflection layer at one end of the optical crystal, And exiting from the high transmittance antireflection layer at the other end of the optical crystal;
  • the optical crystal is an optical crystal having an electrooptic effect, and the optical crystal has a refractive index greater than 3 corresponding to a laser having a wavelength of 308 nm, and the high transmittance antireflection layer is made of MgF 2 or Ai 2 0 3 .
  • the first sub-laser pulse is formed by partially reflecting a primary laser pulse on a spectroscope
  • the second sub-laser pulse is formed by a portion of the original laser pulse passing through the spectroscope, and is adjusted by adjusting a reflection coefficient of the spectroscope.
  • the energy ratio of the first sub-laser pulse and the second sub-laser pulse to the original laser pulse is adjusted by adjusting a reflection coefficient of the spectroscope.
  • the energy of the first sub-laser pulse is 50% of the energy of the original laser pulse, and the energy of the second sub-laser pulse is 503 ⁇ 4 of the energy of the original laser pulse.
  • the number of the mirrors is four, which are first to fourth mirrors, respectively, and the first sub-excitation
  • the light pulse is emitted from the spectroscope, reflected by the first mirror, transmitted to the third mirror, reflected by the third mirror, transmitted to the optical path extending device, and transmitted to the second through the optical path extending device
  • the mirror is reflected by the second mirror and transmitted to the fourth mirror. After being reflected by the fourth mirror, it is transmitted to the exit of the second sub-laser pulse on the spectroscope at an angle to be superimposed with the second sub-laser pulse. .
  • the laser pulse formed by superposing the first sub-laser pulse and the second sub-laser pulse is adjusted by the compensation sheet, and has the same transmission direction as the original laser pulse, and is at the same level.
  • the invention also provides a laser frequency adjustment system, comprising:
  • the entrance port is incident on the beam splitter, and is divided into a first sub-laser pulse and a second sub-laser pulse transmitted in two directions by the beam splitter, and the plurality of mirrors reflect the first sub-laser pulse at an angle to the a second sub-laser pulse exiting portion of the beam splitter, and superimposed with the second sub-laser pulse, and then emitted from the exit port after adjusting the transmission direction by the compensation sheet, wherein the optical path extending device is disposed on the transmission optical path of the first sub-laser pulse in.
  • the first sub-laser pulse is formed by partially reflecting a primary laser pulse on a spectroscope
  • the second sub-laser pulse is formed by a portion of the original laser pulse passing through the spectroscope, and is adjusted by adjusting a reflection coefficient of the spectroscope.
  • the optical path extending device includes: an optical crystal and a high transmittance anti-reflection layer disposed at two ends of the optical crystal, wherein the first sub-laser pulse is incident from a high transmittance anti-reflection layer at one end of the optical crystal, and a high transmittance antireflection layer is emitted from the other end of the optical crystal, wherein the optical crystal is an optical crystal having an electrooptic effect, and the optical crystal has a refractive index greater than 3 when the laser has a wavelength of 308 nm, and the high transmittance is high.
  • the reflective layer is made of MgF 2 or Ai 2 0 3 .
  • the number of the mirrors is four, which are first to fourth mirrors respectively, and the first sub-laser pulse is emitted from the spectroscope, reflected by the first mirror, and then transmitted to the third mirror, and after the third reflection
  • the mirror is reflected and transmitted to the optical path extending device, passes through the optical path extending device, is transmitted to the second mirror, is reflected by the second mirror, and then transmitted to the fourth mirror, and is reflected by the fourth mirror.
  • a certain angle is transmitted to the exit of the second sub-laser pulse on the beam splitter to be superimposed with the second sub-laser pulse.
  • the method for adjusting laser frequency and the laser frequency adjusting system of the present invention are further increased by dividing the original laser pulse into two sub-laser pulses and adding an optical path lengthening device to the original optical path of one of the sub-laser pulses.
  • the optical path difference of the two large sub-laser pulses to become two A distinct discrete sub-laser pulse, and finally the superposition of the two to achieve the frequency adjustment of the laser; meanwhile, since the electro-optical effect of the optical path lengthening device is a fast low-power optical effect, it can be realized by modulating the voltage waveform
  • the laser irradiation can further improve the crystallization effect of polycrystalline silicon.
  • FIG. 1 is a schematic view of a laser pulse light path in a laser annealing process in the prior art
  • FIG. 2 is a flow chart of a method for adjusting a laser frequency according to the present invention
  • FIG. 3 is a schematic diagram of a laser pulse optical path of a laser-adjusted frequency system of the present invention
  • FIG. 4 is a schematic structural view of the optical path extending device of FIG. 3.
  • the invention optimizes the frequency parameter of the laser pulse in the laser annealing process step, so that the frequency adjustable range is increased, thereby further improving the crystallization effect of the polysilicon.
  • the implementation of the invention is that after the laser pulse passes through the beam splitter, it is divided into two sub-laser pulses, and an optical path length extension (OLEX, Optical Length Extension) device is added to the original optical path of the sub-laser pulse, and the optical path of the two sub-laser pulses is The difference is further increased, and the two sub-laser pulses after the beam splitter are clearly distinguished, thereby realizing the frequency adjustment of the laser pulse by superposition of the two sub-laser pulses, which is well solved in the prior art due to limitation. According to the specifications of the machine, the laser number cannot be further adjusted, and the crystallization process and effect of the polysilicon cannot be further studied.
  • This is a method for adjusting the laser frequency according to the present invention, and specifically includes the following steps.
  • the raw laser pulse 10 can be used in a laser annealing process for preparing polycrystalline silicon.
  • the primary laser pulse 10 has a wavelength of 308 nm.
  • Step 2 The original laser pulse 10 is split into a first sub-laser pulse 1 and a second sub-laser 12 respectively transmitted in two directions by a beam splitter (BS) mirror 20.
  • BS beam splitter
  • the first sub-laser pulse 1 is formed by partially reflecting the original laser pulse 10 on one face of the beam splitter 20, and the second sub-laser pulse 12 is a portion of the original laser pulse 10 passing through the beam splitter 20 from the other side. Formed by the exit. Therefore, the energy ratio of the first sub-laser pulse 11 and the second sub-laser pulse 12 to the original laser pulse 10 can be adjusted by adjusting the reflection coefficient of the spectroscope 20. In this embodiment, the energy of the first sub-laser pulse 11 is 50% of the energy of the original laser pulse 10, and the energy of the second sub-laser pulse 12 is 50% of the energy of the original laser pulse 10.
  • Step 3 using a plurality of mirrors 30 to reflect the first sub-laser pulse 11 to the exit of the second sub-laser pulse 12 on the beam splitter 20, and during the transmission of the first sub-laser pulse 11, the first sub- The laser pulse 11 passes through an optical path lengthening device 40.
  • the optical path extending device 40 includes: an optical crystal 42 and a high transmittance anti-reflection layer 44 disposed at two ends of the optical crystal 42.
  • the first sub-laser pulse 11 is from an optical crystal.
  • the 42-side high transmittance anti-reflection layer 44 is incident and is emitted from the high-transmittance anti-reflection layer 44 at the other end of the optical crystal 42. Since the refractive index (N value) of the optical crystal 42 is greater than the refractive index of the air, the first sub-laser pulse 11 passes through the optical path lengthening device 40 to cause the first sub-laser pulse 11 and the second sub-laser pulse 12 to be further delayed.
  • the growth, from the original coincidence form to the apparently separate two sub-laser pulses provides conditions for achieving the frequency multiplication of the laser pulses.
  • the optical crystal 42 in the optical path lengthening device 40 of the present invention is not a conventional fixed refractive index optical crystal, but an optical crystal 42 having an electrooptic effect is selected.
  • the effect refers to the effect of the electric field on the dielectric constant of the crystal, that is, the change in its refractive index.
  • the refractive index is modulated by changing the voltage applied across the optical crystal 42.
  • the refractive index of the optical crystal 42 is variable, the optical path distance passed during the transmission of the first sub-laser pulse 11 is variable, so that the first sub-laser pulse 11 and the second sub-laser pulse 12 can be dynamically adjusted. Time delay between.
  • the electro-optical effect is a fast and low-power optical effect
  • the first sub-laser pulse 11 and the second sub-laser can be further realized by modulating the waveform of the voltage, and the selection criterion of the optical crystal 42 is a corresponding wavelength of 308 nm.
  • the refractive index at the time of laser light is preferably larger than 3, and the smaller the light absorption coefficient (K value), the more f.
  • a high transmittance is preferably anti-reflection layer 44 made of MgF 2 or a C Ai 2 0 3,
  • the number of the mirrors 30 is four, which are the first to fourth mirrors 32, 34, 36, 38, respectively, and the positions of the four mirrors 30 can ensure the first sub-laser pulse.
  • 11 may be directed at an exit point of the second sub-laser pulse 12 on the beam splitter 20, or may be disposed at the same position as the four mirrors in the prior art (such as the mirror 300 in FIG. 1);
  • the optical path lengthening device 40 is disposed between the second and third reflecting mirrors 34, 36.
  • the transmission optical path of the first sub-laser pulse 11 is: the first sub-laser pulse 11 is emitted from the spectroscope 20, reflected by the first mirror 32, and then transmitted to the third mirror 36, and reflected by the third mirror 36.
  • the present invention may further provide a plurality of optical path extending devices 40 in the transmission optical path of the first sub-laser pulse 11, and further increase the light of the first sub-laser pulse 1 and the second sub-laser pulse 12 The path difference.
  • the lengths of the plurality of optical path extending devices 40 may be equal or different, and may be selected according to the distance between the two mirrors 30, and ensure that the optical path extending device 40 does not affect the optical path (ie, the first is guaranteed)
  • the sub-laser pulse 11 can be transmitted in accordance with the path in the prior art.
  • Step 4 The first sub-laser pulse 11 is reflected by the beam splitter 20 and has the same transmission direction as the second sub-laser pulse 12, and is superimposed with the second sub-laser pulse 12, and uses a compensation sheet (CP) 50 pairs. The direction of transmission of the laser pulses 13 formed by the superposition is adjusted.
  • CP compensation sheet
  • the first sub-laser pulse 11 and the second sub-laser pulse 12 are superimposed in the above manner, and not only the frequency multiplication effect of the laser pulse can be realized, but also the time delay between the sub-laser pulses can be dynamically adjusted in real time. It provides conditions for the laser annealing process to study the crystallization process and effect optimization of polycrystalline silicon.
  • the laser pulse formed by superimposing the first sub-laser pulse 11 and the second sub-laser pulse 12 is adjusted by the compensation sheet 50, and has the same transmission direction as the original laser pulse 10, and is at the same level, as shown in FIG. .
  • the present invention further provides a laser frequency adjustment system, including: an entrance port 22 , an exit port 24 , a beam splitter 20 , a compensation sheet 50 , a plurality of mirrors 30 , and an optical path Extending the device 40.
  • the beam splitter 20 is disposed opposite to the entrance port 22, and the compensation sheet 50 is disposed opposite to the exit port 24, and a raw laser pulse 10 is incident from the entrance port 22 to the beam splitter.
  • the splitter mirror 20 splits into a first sub-laser pulse 11 and a second sub-laser pulse 12 transmitted in two directions, and the plurality of mirrors 30 reflect the first sub-laser pulse 11 at an angle to the splitting
  • the second sub-laser pulse 12 on the mirror 20 is emitted from the second sub-laser pulse 12 and superimposed on the second sub-laser pulse 12, and then transmitted through the compensation sheet 50 to adjust the transmission direction, and then emitted from the exit port 24, the optical path extending device 40 is disposed in the first
  • the sub-laser pulse 1] is in the transmission path.
  • the raw laser pulse 10 can be used in a laser annealing process for preparing polycrystalline silicon.
  • the primary laser pulse 10 has a wavelength of 308 nm.
  • the first sub-laser pulse 11 is formed by partially reflecting the original laser pulse 10 on one face of the beam splitter 20, and the second sub-laser pulse 12 is a portion of the original laser pulse 10 passing through the beam splitter 20 and exiting from the other side. And formed. Therefore, the energy ratio of the first sub-laser pulse 1 and the second sub-laser pulse 12 to the original laser pulse 10 can be adjusted by adjusting the reflection coefficient of the beam splitter 20.
  • the energy of the first sub-laser pulse 1 is 50% of the energy of the original laser pulse 10
  • the energy of the second sub-laser pulse 12 is 50% of the energy of the original laser pulse 10.
  • the optical path extending device 40 includes: an optical crystal 42 and a high transmittance anti-reflection layer 44 disposed at two ends of the optical crystal 42.
  • the first sub-laser pulse 11 is from the optical crystal 42.
  • the high transmittance antireflection layer 44 at the end is incident and exits from the high transmittance antireflection layer 44 at the other end of the optical crystal 42.
  • the selection criterion of the optical crystal 42 is that the refractive index of the laser corresponding to the wavelength of 308 nm is preferably greater than 3, and the smaller the absorption coefficient (K value), the better. Since the refractive index (N value) of the optical crystal 42 is greater than the refractive index of the air, the first sub-laser pulse!
  • the first sub-laser pulse 11 and the second sub-laser pulse 12 are further increased in relative delay, and the two sub-laser pulses are separated from the originally overlapping form to realize the laser.
  • the frequency multiplication of the pulse provides the condition.
  • the number of the mirrors 30 is four, which are the first to fourth mirrors 32, 34, 36, 38, respectively, and the positions of the four mirrors 30 can ensure the first sub-laser pulse.
  • 11 may be directed at an exit point of the second sub-laser pulse 12 on the beam splitter 20, or may be disposed at the same position as the four mirrors in the prior art (such as the mirror 300 in FIG. 1);
  • the optical path lengthening device 40 is disposed between the second and third reflecting mirrors 34, 36.
  • the transmission optical path of the first sub-laser pulse 11 is: the first sub-laser pulse 11 is emitted from the spectroscope 20, reflected by the first mirror 32, and then transmitted to the third mirror 36, and reflected by the third mirror 36.
  • the present invention may further provide a plurality of optical path extending devices 40 in the transmission optical path of the first sub-laser pulse 11, and further increase the light of the first sub-laser pulse n and the second sub-laser pulse 12 The path difference.
  • the lengths of the plurality of optical path extending devices 40 may be equal or different, and may be selected according to the distance between the two mirrors 30, and the optical path extending device 40 is not affected to affect the optical path.
  • a sub-laser pulse 1 can be transmitted (transmitted according to a path in the prior art).
  • the method for adjusting the laser frequency and the laser frequency adjusting system of the present invention further increase by dividing the original laser pulse into two sub-laser pulses and adding an optical path lengthening device to the original optical path of one of the sub-laser pulses.
  • the optical path difference of the two sub-laser pulses is to become two distinct discrete sub-laser pulses, and finally the superposition of the two is used to achieve the frequency adjustment of the laser; meanwhile, the electro-optical effect of the optical path lengthening device is a fast low power consumption
  • the optical effect can realize real-time adjustment of the time delay of the two sub-laser pulses by modulating the waveform of the voltage, thereby dynamically adjusting the time delay between the two sub-laser pulses in real time. Therefore, the present invention can effectively widen the frequency range of the laser. And in the same time, the substrate can receive more laser irradiation, which can further improve the crystallization effect of polysilicon.

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Abstract

一种调节激光频率的方法及激光频率调节系统，该调节激光频率的方法包括：步骤1、提供一原激光脉冲（10）；步骤二、利用分光镜（20）将原激光脉冲（10）分成第一子激光脉冲（11）和第二子激光脉冲（12）；步骤3、利用数个反射镜（30）将第一子激光脉冲（11）反射至分光镜（20）上第二子激光脉冲（12）的出射处，并在第一子激光脉冲（11）的传输过程中，使第一子激光脉冲（11）通过一光程延长装置（40）；步骤4、第一子激光脉冲（11）与第二子激光脉冲（12）相叠加，并利用补偿片（50）调节叠加形成的激光脉冲（13）的传输方向。

Description

本发明涉及平板显 尤其涉及一种调节激光频- —激光 频率调节系统。
器以其完全不同的显示和制造技
Figure imgf000003_0001
传统的视频图像显示器主 要为阴极射线管 CRT(Cartiode ray iubes); 而平板显示器与之的主要区别在 于重量和 · 方面的变化， 通常 示器的厚度不超.过 10cm， 当然还有其他的不同， 如显示原理、 制造. 料、 工艺以及视频图像显示驱 动方面的各项技术等。
平板显示器具有完全平面化。 轻、 直 省电等特点， 并朝着高分辨 低功耗、 高集成度的方向发展， 但传统的非晶硅受限于自身的特性无 法满足上述要求， 作为非晶硅的最佳 够满足平板显示 禾 · 良的需求， 因此低温多晶硅（ITPS )显示技术成为显示领域的宠 儿。
作为低温多晶硅显示技术的核心工艺环节， 多晶 ^
特性决定着显示器的性能。 目前已知的多晶硅制备方式包括： 低压化学气 相沉积（LPCVD ) 、 固相结晶、 金属诱导和激光退火等。 目前业界应用最 为广泛的制备方式是激光退火工艺， 通过激光产生的高温将非晶硅熔融重 结 r 夕 SL且硅。 虽然通 is 的参数可以使得结晶效果得到优化， 但 由于受机台规格限制， 可以调制的参数及其范围有限， 比如激光频率， 使 得我们无法对多晶硅的结晶过程及效果进行更深入的研究。
如图 1 所示， 其为现有的激光退火工艺中激光脉冲光路示意图， 图中 的原激光脉冲 100经过一分光镜 200后将原激光脉冲 100分裂成两个子激 光脉沖 101、 102 , 子激光脉冲 101、 102 的能量均为原激光脉沖 100 的 50%, 其中， 子激光脉冲 101 经过四个反光镜 300反射后传输回至分光镜 200处， 与子激光脉冲 102相叠加， 由于经过分光镜 200后的子激光脉冲 101、 102在垂直方向上存在一段下移距离， 因此， 采用补偿片 400将叠加 后的激光脉冲 103调节至原始的垂直位置。 在该过程中， 相较于子激光脉 沖 102, 子激光脉冲 101传输的距离要长， 所以会与子激光脉冲 102存在 时间延迟， 子激光脉冲 101和子激光脉冲 102最终叠加在一起形成上图所 示的激光脉冲 104„ 由于受机台规格限制， 如图 i 所示的四个反光镜 300 的位置全部固定， 无法再进.行调节， 最终所形成的激光脉冲 104为固定形 式， 无法对多晶硅的结晶过程及效果进行更进一步的改善。 发明内容
本发明的目的在于提供一种调节激光频率的方法， 通过将原激光脉冲 分成两子激光脉冲， 并在其中一子激光脉沖的原本光路中增加光程延长装 置来进一步增大两子激光脉冲的光程差， 以成为两个明显分立的子激光脉 冲， 最后以两者的叠加来实现激光的频率调节。
本发明的另一目的在于提供一种激光频率调节系统， 通过增加光程延 长装置来增加子激光脉冲的光程， 可以有效地拓宽激光脉冲的频率范围， 并且在相同的时间内， 基板可以接受更多的激光照射， 可以进一步完善多 晶硅的结晶效果
为实现上述目的， 本发明提供一种调节激光频率的方法， 包括以下步 骤：
步骤 1、 提供一原激光脉冲；
步骤 2、 利用分光镜将该原激光脉冲分成分别沿两个方向传输的第一 子激光脉冲和第二子激光脉冲；
步骤 3、 利用数个反射镜将第一子激光脉冲反射至分光镜上第二子激 光脉冲的出射处， 并在该第一子激光脉冲传输过程中， 使该第一子激光脉 沖通过一光程延长装置；
步骤 4、 所述第一子激光脉冲经分光镜反射后与第二子激光脉冲具有 相同的传输方向， 并与第二子激光脉冲相叠加， 并利用补偿片对叠加形成 的激光脉冲的传输方向进行调节。
所述第一子激光脉冲为原激光脉冲在分光镜上部分反射而形成， 所述 第二子激光脉冲为原激光脉冲部分穿过该分光镜出射 ¾形成， 通过调节分 光镜的反射系数来调节第一子激光脉冲和第二子激光脉冲占原激光脉冲的 能量比。
所述第一子激光脉冲的能量为原激光脉沖的能量的 50%, 所述第二子 激光脉冲的能量为原激光脉沖的能量的 50%。
所述光程延长装置包括： 光学晶体及设于所述光学晶体两端的高透光 率防反射层， 所述第一子激光脉冲从光学晶体一端的高透光率防反射层入 射， 并从光学晶体另一端的高透光率防反射层出射。 所述光学晶体为存在电光效应的光学晶体， 所述光学晶体对应波长为
308nm的激光时的折射率大于 3 , 所述高透光率防反射层由 MgF2或者 A1203 制成。
所述反射镜的数量为四个， 分别为第一至第四反射镜， 所述第一子激 光脉沖从分光镜出射后经过第一反射镜反射后传输至第三反射镜， 经过第 三反射镜反射后传输至所述光程延长装置， 并穿过该光程延长装置后传输 至第二反射镜， 经过第二反射镜反射后传输至第四反射镜， 经过第四反射 镜反射后以一定角度传输至分光镜上第二子激光脉冲的出射处， 以与第二 子激光脉冲相叠加。
所述第一子激光脉冲与第二子激光脉冲叠加形成的激光脉冲经补偿片 调节后， 与原激光脉冲具有相同的传输方向， 且处于同一水平高度上。
本发明还提供一种调节激光频率的方法， 包括以下步骤：
步骤 1、 提供一原激光脉沖；
步骤 2、 利用分光镜将该原激光脉沖分成分别沿两个方向传输的第一 子激光脉冲和第二子激光脉冲；
步骤 3、 利用数个反身镜将第一子激光脉冲反射至分光镜上第二子激 光脉冲的出射处， 并在该第一子激光脉冲传输过程中， 使该第一子激光脉 冲通过一光程延长装置；
步骤 4。 所述第一子激光脉冲经分光镜反射后与第二子激光脉冲具有 相同的传输方向， 并与第二子激光脉冲相叠加， 并利用补偿片对叠加形成 的激光脉冲的传输方向进行调节；
其中， 所述光程延长装置包括： 光学晶体及设于所述光学晶体两端的 高透光率防反射层， 所述第一子激光脉冲从光学晶体一端的高透光率防反 射层入射， 并从光学晶体另一端的高透光率防反射层出射；
其中， 所述光学晶体为存在电光效应的光学晶体， 所述光学晶体对应 波长为 308nm的激光时的折射率大于 3， 所述高透光率防反射层由 MgF2或 者 Ai203制成。
所述第一子激光脉冲为原激光脉冲在分光镜上部分反射而形成， 所述 第二子激光脉沖为原激光脉冲部分穿过该分光镜出射而形成， 通过调节分 光镜的反射系数来调节第一子激光脉冲和第二子激光脉冲占原激光脉冲的 能量比。
所述第一子激光脉冲的能量为原激光脉沖的能量的 50%， 所述第二子 激光脉冲的能量为原激光脉沖的能量的 50¾。
所述反射镜的数量为四个， 分别为第一至第四反射镜， 所述第一子激 光脉沖从分光镜出射后经过第一反射镜反射后传输至第三反射镜， 经过第 三反射镜反射后传输至所述光程延长装置， 并穿过该光程延长装置后传输 至第二反射镜， 经过第二反射镜反射后传输至第四反射镜， 经过第四反射 镜反射后以一定角度传输至分光镜上第二子激光脉沖的出射处， 以与第二 子激光脉冲相叠加。
所述第一子激光脉冲与第二子激光脉冲叠加形成的激光脉冲经补偿片 调节后， 与原激光脉冲具有相同的传输方向， 且处于同一水平高度上。
本发明还提供一种激光频率调节系统， 包括：
一入射口、 一分光镜、 数个反射镜、 一光程延长装置、 一补偿片及一 出射口； 该分光镜相对该入射口设置， 该补偿片相对该出射口设置； 一原 激光脉冲从该入射口入射至分光镜处， 经分光镜分成沿两个方向传输的第 一子激光脉冲和第二子激光脉冲， 所述数个反射镜将该第一子激光脉沖以 一定角度反射至该分光镜上第二子激光脉沖出射处， 并与第二子激光脉冲 叠加后经过补偿片调节传输方向后从该出射口射出， 所述光程延长装置设 于该第一子激光脉冲的传输光路中。
所述第一子激光脉冲为原激光脉冲在分光镜上部分反射而形成， 所述 第二子激光脉沖为原激光脉冲部分穿过该分光镜出射而形成， 通过调节分 光镜的反射系数来调节第一子激光脉冲和第二子激光脉冲占原激光脉冲的 能量比， 所述第一子激光脉冲的能量为原激光脉沖的能量的 50%， 所述第 二子激光脉冲的能量为原激光脉冲的能量的 50%;
所述光程延长装置包括： 光学晶体及设于所述光学晶体两端的高透光 率防反射层， 所述第一子激光脉冲从光学晶体一端的高透光率防反射层入 射， 并从光学晶体另一端的高透光率防反射层出射， 所述光学晶体为存在 电光效应的光学晶体， 所述光学晶体对应波长为 308nm的激光时的折射率 大于 3 , 所述高透光率防反射层由 MgF2或者 Ai203制成。
所述反射镜的数量为四个， 分别为第一至第四反射镜， 所述第一子激 光脉沖从分光镜出射后经过第一反射镜反射后传输至第三反射镜， 经过第 三反射镜反射后传输至所述光程延长装置， 并穿过该光程延长装置后传输 至第二反射镜， 经过第二反射镜反射后传输至第四反射镜， 经过第四反射 镜反射后以一定角度传输至分光镜上第二子激光脉冲的出射处， 以与第二 子激光脉冲相叠加。
本发明的有益效果： 本发明的调节激光频率的方法及激光频率调节系 统， 通过将原激光脉冲分成两子激光脉冲, 并在其中一子激光脉冲的原本 光路中增加光程延长装置来进一步增大两子激光脉沖的光程差， 以成为两 个明显分立的子激光脉沖， 最后以两者的叠加来实现激光的频率调节； 同 时， 由于光程延长装置的电光效应是一种快速低功耗的光学效应， 可以通 过调制电压的波形实现对两子激光脉冲时间延迟的实时调节， 进而实时动 态的调节两子激光脉冲之间的时间延迟， 因此， 本发明可以有效的拓宽激 光的频率范围， 并且在相同的时间内， 基板可以接受更多的激光照射， 可 以进一步完善多晶硅的结晶效果。
为了能更进一步了解本发明的特征以及技术内容， 请参阅以下有关本 发明的详细说明与酎图， 然而附图仅提供参考与说明用， 并非用来对本发 明加以限制。 附图说明
下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见
附图中，
图 1为现有技术中激光退火工艺中激光脉沖光路示意图；
图 2为本发明调节激光频率的方法的流程图；
图 3为本发明激光调节频率系统的激光脉冲光路示意图；
图 4为图 3中光程延长装置的结构示意图。
为更进一步阐述本发明所采取的技术手段及其效果， 以下结合本发明 的优选实施例及其附图进行详细描述。
本发明是针对激光退火工艺环节中激光脉沖的频率参数进行优化， 使 得频率可调的范围增大， 进而进一步完善多晶硅的结晶效果。 本发明的实 现方式是在激光脉冲经过分光镜后分成两子激光脉冲， 并在一子激光脉冲 的原本光路中增加光程延长 ( OLEX, Optical Length Extension )装置， 将 两子激光脉冲的光程差进一步的增大， 将经过分光镜后的两子激光脉冲明 显的区分开来， 从而利用两子激光脉冲的叠加来实现激光脉冲的频率调 节， 很好地解决了现有技术中由于受限于机台规格， 无法进一步调节激光 数， 而无法对多晶硅的结晶过程和效果进行更深入的研究这一问 阅图 2 至图 4， 本发明调节激光频率的方法， 具体包括以下步
Figure imgf000007_0001
1、 提供一原激光脉冲 10。 该原激光脉冲 10 可用于制备多晶硅的激光退火工艺。 优选的， 该原 激光脉冲 10的波长为 308nm。
步骤 2、 利用分光（ beam splitter, BS )镜 20将该原激光脉冲 10分成 分别沿两个方向传输的第一子激光脉冲】1和第二子激光脉冲 12。
所述第一子激光脉冲 】1 为原激光脉冲 10在分光镜 20的一个面上部 分反射而形成， 所述第二子激光脉冲 12为原激光脉冲 10部分穿过该分光 镜 20从另一面出射而形成。 因此， 可以通过调节分光镜 20的反射系数来 调节第一子激光脉冲 11 和第二子激光脉沖 12 占原激光脉冲 10 的能量 比。 在本实施例中， 所述第一子激光脉冲 11 的能量为原激光脉冲 10的能 量的 50%， 所述第二子激光脉冲 12 的能量为原激光脉冲 10 的能量的 50%。
步骤 3、 利用数个反射镜 30将第一子激光脉冲 11反射至分光镜 20上 第二子激光脉冲 12的出射处， 并在该第一子激光脉冲 11传输过程中， 使 该第一子激光脉冲 11通过一光程延长装置 40。
在本实施例中， 所述光程延长装置 40包括： 光学晶体 42及设于所述 光学晶体 42两端的高透光率防反.射层 44， 所述第一子激光脉冲 11从光学 晶体 42 —端的高透光率防反射层 44入射， 并从光学晶体 42另一端的高 透光率防反射层 44出射。 由于光学晶体 42的折射率 （N值） 大于空气的 折射率， 第一子激光脉冲 1 1通过光程延长装置 40后会使得第一子激光脉 冲 11和第二子激光脉冲 12相对时延进一步增长， 由原本存在重合的形式 变为明显分开的两个子激光脉冲， 为实现激光脉冲的倍频提供了条件。
激光退火工艺的制程机理较为复杂， 激光脉冲不同的时间间隔对最终 的退火效果将产生不同的效果。 为了增加制程调试的空间， 进一步提高激 光退火工艺的效果， 本发明中光程延长装置 40中的光学晶体 42并非传统 的固定折射率的光学晶体， 而是选用存在电光效应的光学晶体 42 (电光效 应是指在电场的作用下， 晶体的介电常数， 即其折射率发生改变的效 应） ， 通过改变光学晶体 42 两端所加电压从而实现其折射率的调制。 由 于光学晶体 42折射率可变， 使得第一子激光脉冲 11传输过程中经过的光 程距离是可变的， 从而可动态的调节第一子激光脉冲 11 和第二子激光脉 冲 12 两者之间的时间延迟。 同时由于电光效应是一种快速低功耗的光学 效应， 可以通过调制电压的波形实现对第一子激光脉冲 11 和第二子激光 进一步地， 所述光学晶体 42选择标准是对应波长为 308nm的激光时 的折射率优选大于 3 , 且吸光系数（K值）越小越 f。 另外， 为了减少第一子激光脉冲 11 传输过程中的损耗， 所述高透光 率防反射层 44优选由 MgF2或者 Ai203制成 c,
在本实施例中， 所述反射镜 30 的数量为四个， 分别为第一至第四反 射镜 32、 34、 36、 38， 该四个反射镜 30 的设置位置能够保证第一子激光 脉冲 11 以一定的角度射向分光镜 20 上第二子激光脉冲 12 的出射处即 可， 也可与现有技术中四个反射镜（如图 1 中的反射镜 300 )设置的位置 相同； 所述光程延长装置 40设于第二、 第三反射镜 34、 36之间。 该第一 子激光脉冲 11 的传输光路为： 所述第一子激光脉冲 11 从分光镜 20 出射 后经过第一反射镜 32反射后传输至第三反射镜 36, 经过第三反射镜 36反 射后传输至所述光程延长装置 40， 并穿过该光程延长装置 40后传输至第 二反射镜 34， 经过第二反射镜 34反射后传输至第四反射镜 38， 经过第四 反射镜 38反射后以一定角度传输至分光镜 20上第二子激光脉沖 12的出 射处， 以便经过分光镜 20反射后与穿过分光镜 20 的第二子激光脉冲 12 具有相同的传播方向， 进而可与第二子激光脉冲 12相叠加。
作为可供选择的， 本发明还可以在第一子激光脉冲 11 的传输光路中 设置多个光程延长装置 40， 进而可以进一步加大第一子激光脉冲 1 与第 二子激光脉冲 12的光程差。 该多个光程延长装置 40的长度可以相等， 也 可以不等， 具体根据两反射镜 30之间的距离进行选择， 且保证设置光程 延长装置 40处不会影响光路路径 （即保证第一子激光脉冲 11 可以按照现 有技术中的路径进.行传输） 。
步骤 4、 所述第一子激光脉冲 11 经分光镜 20反射后与第二子激光脉 沖 12具有相同的传输方向， 并与第二子激光脉冲 12相叠加， 并利用补偿 片 （CP ) 50对叠加形成的激光脉冲 13的传输方向进行调节。
所述第一子激光脉冲 11 与第二子激光脉冲 12 通过上述方式进行叠 加， 不仅仅可以实现激光脉冲的倍频效果， 并且还能够实时动态的调节子 激光脉冲之闾的时间延迟。 为激光退火工艺研究多晶硅的结晶过程及效果 优化提供了条件。
所述第一子激光脉冲 11与第二子激光脉冲 12叠加形成的激光脉沖经 补偿片 50调节后， 与原激光脉冲 10具有相同的传输方向， 且处于同一水 平高度上， 如图 3所示。
请参阅图 3及图 4， 本发明还提供一种激光频率调节系统， 包括： 一 入射口 22、 一出射口 24、 一分光镜 20、 一补偿片 50、 数个反射镜 30及 一光程延长装置 40。 所述分光镜 20相对该入射口 22设置， 所述补偿片 50相对该出射口 24设置， 一原激光脉沖 10从该入射口 22入射至分光镜 20处， 经分光镜 20分成沿两个方向传输的第一子激光脉冲 11和第二子激 光脉冲 12， 所述数个反射镜 30将该第一子激光脉冲 11 以一定角度反射至 该分光镜 20上第二子激光脉冲 12 出射处， 并与第二子激光脉冲 12 叠加 后经过补偿片 50调节传输方向后从该出射口 24射出， 所述光程延长装置 40设.于该第一子激光脉冲 1】的传输光路中。
该原激光脉沖 10 可用于制备多晶硅的激光退火工艺。 优选的， 该原 激光脉冲 10 的波长为 308nm。 所述第一子激光脉冲 11 为原激光脉冲 10 在分光镜 20的一个面上部分反射而形成， 所述第二子激光脉冲 12为原激 光脉冲 10部分穿过该分光镜 20从另一面出射而形成。 因此， 可以通过调 节分光镜 20 的反射系数来调节第一子激光脉冲 1 和第二子激光脉冲 12 占原激光脉冲 10的能量比。 在本实施例中， 所述第一子激光脉冲 1 的能 量为原激光脉冲 10的能量的 50%, 所述第二子激光脉冲 12的能量为原激 光脉冲 10的能量的 50%。
在本实施例中， 所述光程延长装置 40包括： 光学晶体 42及设于所述 光学晶体 42两端的高透光率防反射层 44， 所述第一子激光脉冲 11从光学 晶体 42—端的高透光率防反射层 44入射， 并从光学晶体 42另一端的高 透光率防反射层 44出射。 所述光学晶体 42选择标准是对应波长为 308nm 的激光时的折射率优选大于 3， 且吸光系数（K值）越小越好。 由于光学 晶体 42的折射率 （N值） 大于空气的折射率， 第一子激光脉冲！1通过光 程延 _长装置 40后会使得第一子激光脉冲 11 和第二子激光脉冲 12相对时 延进一步增长， 由原本存在重合的形式变为明显分开的两个子激光脉沖， 为实现激光脉冲的倍频提供了条件。
在本实施例中， 所述反射镜 30 的数量为四个， 分别为第一至第四反 射镜 32、 34、 36、 38, 该四个反射镜 30 的设置位置能够保证第一子激光 脉冲 11 以一定的角度射向分光镜 20 上第二子激光脉冲 12 的出射处即 可， 也可与现有技术中四个反射镜（如图 1 中的反射镜 300 )设置的位置 相同； 所述光程延长装置 40设于第二、 第三反射镜 34、 36之间。 该第一 子激光脉冲 11 的传输光路为： 所述第一子激光脉冲 11 从分光镜 20 出射 后经过第一反射镜 32反射后传输至第三反射镜 36, 经过第三反射镜 36反 射后传输至所述光程延长装置 40， 并穿过该光程延长装置 40后传输至第 二反射镜 34， 经过第二反射镜 34反射后传输至第四反射镜 38, 经过第四 反射镜 38反射后以一定角度传输至分光镜 20上第二子激光脉冲 12的出 射处， 以便经过分光镜 20反射后与穿过分光镜 20 的第二子激光脉冲 】2 具有相同的传播方向， 进 可与第二子激光脉冲 12相叠加。 作为可供选择的， 本发明还可以在第一子激光脉冲 11 的传输光路中 设置多个光程延长装置 40， 进而可以进一步加大第一子激光脉冲 n 与第 二子激光脉冲 12的光程差。 该多个光程延长装置 40的长度可以相等， 也 可以不等， 具体根据两反射镜 30 之间的距离进行选择， 且保证设置光程 延长装置 40处不会影响光路^ ¾ (即保证第一子激光脉冲 1 可以按照现 有技术中的路径进行 ·传输） 。
综上所述， 本发明的调节激光频率的方法及激光频率调节系统， 通过 将原激光脉冲分成两子激光脉沖， 并在其中一子激光脉冲的原本光路中增 加光程延长装置来进一步增大两子激光脉冲的光程差， 以成为两个明显分 立的子激光脉冲， 最后以两者的叠加来实现激光的频率调节； 同时， 由于 光程延长装置的电光效应是一种快速低功耗的光学效应， 可以通过调制电 压的波形实现对两子激光脉冲时间延迟的实时调节， 进而实时动态的调节 两子激光脉冲之间的时间延迟， 因此， 本发明可以有效的拓宽激光的频率 范围， 并且在相同的时间内， 基板可以接受更多的激光照射， 可以进一步 完善多晶硅的结晶效果。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明权利要求的保护范围„

Claims

权 利 要 求
步骤 提供一原激光脉冲 ^ ' — ― 子激光脉冲和第二子激光脉沖 Λ Λ ° ' 步骤 3、 利用数个反射镜将第一子激光脉冲反射至分光镜上第二子激 光脉冲的出射处， 并在该第一子激光脉冲传输过程中， 使该第一子激光脉 冲通过一光程延长装置；
步骤 4、 所述第一子激光脉冲经分光镜反射后与第二子激光脉冲具有 相同的传输方向， 并与第二子激光脉冲相叠加， 并利用补偿片对叠加形成 的激光脉冲的传输方向进行调节。
2、 如权利要求 1 所述的调节激光频率的方法， 其中， 所述第一子激 光脉沖为原激光脉冲在分光镜上部分反射而形成， 所述第二子激光脉冲为 原激光脉冲部分穿过该分光镜出射而形成， 通过调节分光镜的反射系数来 调节第一子激光脉冲和第二子激光脉冲占原激光脉冲的能量比。
3 , 如权利要求 2 所述的调节激光频率的方法， 其中， 所述第一子激 光脉冲的能量为原激光脉冲的能量的 50%， 所述第二子激光脉冲的能量为 原激光脉冲的能量的 50%。
4、 如权利要求 1 所述的调节激光频率的方法， 其中， 所述光程延长 装置包括： 光学晶体及设于所述光学晶体两端的高透光率防反射层， 所述 第一子激光脉冲从光学晶体一端的高透光率防反射层入射， 并从光学晶体 另一端的高透光率防反射层出射。
5、 如权利要求 4 所述的调节激光频率的方法， 其中， 所述光学晶体 为存在电光效应的光学晶体， 所述光学晶体对应波长为 308nm的激光时的 折射率大于 3， 所述高透光率防反射层由 MgF2或者 A1203制成。
6 , 如权利要求 i 所述的调节激光频率的方法， 其中， 所述反射镜的 数量为四个， 分别为第一至第四反射镜， 所述第一子激光脉冲从分光镜出 射后经过第一反射镜反射后传输至第三反射镜， 经过第三反射镜反射后传 输至所述光程延长装置， 并穿过该光程延长装置后传输至第二反射镜， 经 过第二反射镜反射后传输至第四反射镜， 经过第四反射镜反射后以一定角 度传输至分光镜上第二子激光脉冲的出射处， 以与第二子激光脉冲相叠 力《。 1 所述的调节激光频率的方法， 其中 所述第一子激 子激光脉冲叠加形成的激光脉冲经补偿片调' 与原激光 ^相同的传输方向， 且处于同一水平高度上。
8、 -种调节激光频率的方法， 包
步骤 1、 提供一原激光脉沖：
步骤 2、 利用分光镜将该，
子激光脉冲和第二子激光脉沖；
步骤 3、 利用
-处，
Figure imgf000013_0001
冲通过一光程延长装置；
步骤 4、 所述第一子激光脉冲经分光镜 第二子激光脉冲具有 相同的传输方向， 并与第二子激光脉冲相叠力 ^ 并利用补偿片对叠加形成 的激光脉冲的传输方向进行调节；
其中， 所述光程延长装置包括： 设于所述光学晶体两端的 高透光率防反射层 所述第一子激光脉冲从光学晶体一端的高透光率防反 射层入射， 并从光 晶体另 端的高透光率防反射层出
其中， 所述光学 " 电光效应的光学晶体， 所述光学晶体对应 波长为 308niii的激光时的折射率大于 3 , 所述高透光率防.反射层由 MgF2或 者 A〗203制成。
9、 如权利要求 8 所述的调节激光频率的方法， 其中， 所述第一子激 所述第二子激光脉沖为
Figure imgf000013_0002
通过调节分光镜的反射系数来 调节: 子激光脉冲和第二子激光脉沖占原激光脉冲的能量比。
10 , 如权利要求 9所述的调节激光频率的方法， 其中， 所述第一子激
50%， 所述第二子
Figure imgf000013_0003
11 如权利要求 8 所述的调节激光频率的方法， 其中， si 镜的 数量为四个， 分别为第一至第 is?反射镜， 所述第一子激光脉沖从分光镜出 射后经过第一反射镜反射后传输至第三反射镜， 经过第三反射镜反射后传 输至所述光程延长装置， 并穿过该光程延长装置后传输至第二反射镜， 经 过第二反射镜反射后传输至第四反射镜， 经过第四反射镜反射后以一定角 度传输至分光镜上第二子激光脉冲的出射处， 以与第二子激光脉冲相叠 加。
12 , 如权利要求 8所述的调节激光频率的方法， 其中， 所述第一子激 光脉沖与第二子激光脉沖叠加形成的激光脉冲经补偿片调节后， 与原激光 脉沖具有相同的传输方向， 且处于同一水平高度上。
13、 一种激光频率调节系统， 包括： 一入射口。 一分光镜、 数个反射 镜、 一光程延长装置、 一补偿片及一出射口； 该分光镜相对该入射口设 置， 该朴偿片相对该出射口设置； 一原激光脉冲从该入射口入射至分光镜 所述数个反射镜将该第二子激光脉冲 定 ^度反射至 分光 第二子 激光脉冲出射处， 并与第二子激光脉冲叠加后经过补偿片调节传输方向后 从该出射口射出， 所述光程延长装置设于该第一子激光脉冲的传输光路 中。
】4、 如权利要求 13 所述的激光频率调节系统， 其中， 所述第一子激 光脉冲为原激光脉沖在分光镜上部分反射而形成， 所述第二子激光脉沖为 原激光脉冲部分穿过该分光镜出射而形成， 通过调节分光镜的反射系数来 调节第一子激光脉冲和第二子激光脉冲占原激光脉沖的能量比， 所述第一 子激光脉冲的能量为原激光脉沖的能量的 50%， 所述第二子激光脉冲的能 量为原激光脉冲的能量的 50%;
所述光程延长装置包括： 光学晶体及设于所述光学晶体两端的高透光 率防反射层， 所述第一子激光脉冲从光学晶体一端的高透光率防反射层入 射， 并从光学晶体另一端的高透光率防反射层出射， 所述光学晶体为存在 电光效应的光学晶体， 所述光学晶体对应波长为 308nm的激光时的折射率 大于 3， 所述高透光率防反射层由 MgF2或者 A1203制成。
15、 如权利要求 13 所述的激光频率调节系统， 其中， 所述反射镜的 数量为四个， 分别为第一至第 is?反射镜， 所述第一子激光脉沖从分光镜出 射后经过第一反射镜反射后传输至第三反射镜， 经过第三反射镜反射后传 输至所述光程延长装置， 并穿过该光程延长装置后传输至第二反射镜， 经 过第二反射镜反射后传输至第四反射镜， 经过第四反射镜反射后以一定角 度传输至分光镜上第二子激光脉冲的出射处， 以与第二子激光脉冲相叠 力口。
PCT/CN2013/087012 2013-11-05 2013-11-13 调节激光频率的方法及激光频率调节系统 Ceased WO2015066939A1 (zh)

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