WO2015062807A1 - Procédé d'élimination de dépôts sur les parois d'une chambre de traitement - Google Patents
Procédé d'élimination de dépôts sur les parois d'une chambre de traitement Download PDFInfo
- Publication number
- WO2015062807A1 WO2015062807A1 PCT/EP2014/071133 EP2014071133W WO2015062807A1 WO 2015062807 A1 WO2015062807 A1 WO 2015062807A1 EP 2014071133 W EP2014071133 W EP 2014071133W WO 2015062807 A1 WO2015062807 A1 WO 2015062807A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- walls
- process chamber
- layer
- cleaning
- metal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 108
- 238000004140 cleaning Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 3
- 239000010439 graphite Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 27
- 238000009736 wetting Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 13
- 239000000460 chlorine Substances 0.000 claims description 12
- 239000012159 carrier gas Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001338 liquidmetal Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 organometallic chemical compounds Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/24—Mineral surfaces, e.g. stones, frescoes, plasters, walls or concretes
Definitions
- DE 10 2011 056 538 A1 discloses a method for cleaning a process chamber by introducing HCl with H 2 pulses. During purification, gallium is produced as an intermediate.
- US 2004/0244817 AI describes the cleaning of a turbine blade using a multi-component etching. This is intended to include, for example, NH 4 Cl and a metallic component consisting of aluminum or chromium.
- the etching step is performed, for example, at a temperature between 500 ° C and 1,000 ° C.
- the wetting step and the subsequent cleaning step can be described as
- a thin III-V layer is applied to the liquid metal layer.
- the liquid metal layer only needs to have the thickness of a monolayer. But it can also be several monolayers thick.
- III-V layer for example an AIN layer, deposited.
- the layer thickness is then approximately in the range of 30 nm.
- AIN layer On this AIN layer, a
- GaN layer are deposited. This is done by the simultaneous introduction of NH3 and TMGa.
- the GaN layer preferably has a layer thickness of up to 500 nm.
- the purification step is then carried out by introducing the cleaning gas, for example Cl 2 together with a carrier gas.
- the introduction of NH3 can already begin before the above-mentioned temperature ramp has reached its maximum value, which is above 1,000, in particular above 1,200 ° C.
- step sequences can be repeated several times in succession.
- the III-V coating process and the subsequent cleaning process are preferably repeated several times in succession by introducing the cleaning gas.
- FIG. 1 shows a flowchart in which the total pressure and the susceptor temperature are plotted against time. The intervals on the time scale are 15 minutes each.
- the cleaning process illustrated in FIG. 1 begins at an elevated temperature of approximately 200 ° C. An inert gas or hydrogen is first fed into the process chamber. The process chamber pressure is set to 100 mbar. It is then driven a temperature ramp. Upon reaching a temperature of 550 ° C TMAl is introduced into the process chamber, which decomposes on the hot susceptor surface, forming liquid aluminum and gaseous methane. The latter is transported away with the carrier gas. The remaining aluminum wets the surface with
- SiN-contaminated process chamber walls so that at least forms a 100% monolayer.
- III-V coating steps and the subsequent etching step can be carried out as a series of process steps several times in succession until the SiN coating has been removed without residue.
- the cleaning of the process chamber or the deposition of III-VI layers takes place only in that the SiN occupancy of a silicon carbide-coated wall of the process chamber is wetted with liquid aluminum, wherein immediately after the wetting step Cl 2 is placed in the process chamber.
- cyclic repetitive cleaning step sequences are possible, each step having a wetting step and an etching step.
- a method characterized in that a process step sequence including at least one process step, in which the walls / surfaces of the process chamber are wetted with a metal and a process step in which a cleaning gas is introduced into the process chamber, is repeated several times in succession.
- a method characterized in that the wetting of the walls of the process chamber with a metal is effected by introducing an organometallic compound together with a carrier gas into the process chamber.
- a method characterized in that the temperature within the process chamber continuously increases during wetting.
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
L'invention concerne un procédé d'élimination de dépôts sur les parois/surfaces d'une chambre de traitement d'un réacteur CVD, en particulier des surfaces de graphite enduites de SiC. La chambre de traitement est chauffée à une température de lavage et un gaz de nettoyage, contenant en particulier un élément du groupe principal VII, est introduit pendant la durée du nettoyage dans la chambre de traitement. Selon l'invention, pour améliorer ou permettre le nettoyage d'une chambre de traitement, les parois/surfaces à nettoyer dotées d'un métal, notamment de l'aluminium, doivent être humidifiées avant d'introduire le gaz de nettoyage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013111854.2 | 2013-10-28 | ||
| DE102013111854.2A DE102013111854A1 (de) | 2013-10-28 | 2013-10-28 | Verfahren zum Entfernen von Ablagerungen an den Wänden einer Prozesskammer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015062807A1 true WO2015062807A1 (fr) | 2015-05-07 |
Family
ID=51690364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2014/071133 WO2015062807A1 (fr) | 2013-10-28 | 2014-10-02 | Procédé d'élimination de dépôts sur les parois d'une chambre de traitement |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102013111854A1 (fr) |
| TW (1) | TW201527584A (fr) |
| WO (1) | WO2015062807A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114008239A (zh) * | 2019-05-06 | 2022-02-01 | 艾克斯特朗欧洲公司 | 用于沉积包含镓和铟的半导体层系统的方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976396A (en) | 1998-02-10 | 1999-11-02 | Feldman Technology Corporation | Method for etching |
| EP1298230A1 (fr) * | 2001-10-01 | 2003-04-02 | Siemens Aktiengesellschaft | Procédé pour enlever des produits de corrosion d'un composant métallique |
| US7842588B2 (en) | 2007-02-22 | 2010-11-30 | Mosaic Crystals | Group-III metal nitride and preparation thereof |
| US20110223710A1 (en) | 2010-03-09 | 2011-09-15 | First Solar, Inc. | Deposition Chamber Cleaning System and Method |
| US20110268880A1 (en) | 2009-10-28 | 2011-11-03 | Alta Devices, Inc. | Reactor clean |
| US20130005118A1 (en) | 2011-07-01 | 2013-01-03 | Sung Won Jun | Formation of iii-v materials using mocvd with chlorine cleans operations |
| DE102011056538A1 (de) | 2011-12-16 | 2013-06-20 | Aixtron Se | Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung |
| DE102012101438A1 (de) | 2012-02-23 | 2013-08-29 | Aixtron Se | Verfahren zum Reinigen einer Prozesskammer eines CVD-Reaktors |
-
2013
- 2013-10-28 DE DE102013111854.2A patent/DE102013111854A1/de not_active Withdrawn
-
2014
- 2014-10-02 WO PCT/EP2014/071133 patent/WO2015062807A1/fr active Application Filing
- 2014-10-07 TW TW103134935A patent/TW201527584A/zh unknown
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976396A (en) | 1998-02-10 | 1999-11-02 | Feldman Technology Corporation | Method for etching |
| EP1298230A1 (fr) * | 2001-10-01 | 2003-04-02 | Siemens Aktiengesellschaft | Procédé pour enlever des produits de corrosion d'un composant métallique |
| US20040244817A1 (en) | 2001-10-01 | 2004-12-09 | Norbert Czech | Method for removing at least one area of a layer of a component consisting of metal or a metal compound |
| US7842588B2 (en) | 2007-02-22 | 2010-11-30 | Mosaic Crystals | Group-III metal nitride and preparation thereof |
| US20110268880A1 (en) | 2009-10-28 | 2011-11-03 | Alta Devices, Inc. | Reactor clean |
| US20110223710A1 (en) | 2010-03-09 | 2011-09-15 | First Solar, Inc. | Deposition Chamber Cleaning System and Method |
| US8334166B2 (en) | 2010-03-09 | 2012-12-18 | First Solar, Inc. | Deposition chamber cleaning system and method |
| US20130005118A1 (en) | 2011-07-01 | 2013-01-03 | Sung Won Jun | Formation of iii-v materials using mocvd with chlorine cleans operations |
| DE102011056538A1 (de) | 2011-12-16 | 2013-06-20 | Aixtron Se | Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung |
| DE102012101438A1 (de) | 2012-02-23 | 2013-08-29 | Aixtron Se | Verfahren zum Reinigen einer Prozesskammer eines CVD-Reaktors |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114008239A (zh) * | 2019-05-06 | 2022-02-01 | 艾克斯特朗欧洲公司 | 用于沉积包含镓和铟的半导体层系统的方法 |
| CN114008239B (zh) * | 2019-05-06 | 2024-05-14 | 艾克斯特朗欧洲公司 | 用于沉积包含镓和铟的半导体层系统的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013111854A1 (de) | 2015-05-21 |
| TW201527584A (zh) | 2015-07-16 |
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