Classifications

• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/0412—Digitisers structurally integrated in a display
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
  • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
  • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L23/53204—Conductive materials
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
  • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
  • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
  • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
  • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Definitions

• Touch sensors are used in a variety of electronic devices such as in navigation systems, copiers, in PC systems, or more recently in mobile devices such as mobile phones, smartphones, tablet PCs, PDAs (personal digital assistants), portable music players, etc. use.
• the touch sensor is arranged above a display unit such as, for example, a liquid crystal (LCD) or OLED (organic light emitting diode) screen or in such a manner
• Integrated display unit and forms a so-called touch panel, too
• Such touch panels allow the user an intuitive operation of the electronic device, wherein the user communicates with the electronic device by touching a surface of the touch sensor with the finger, a pen or other object.
• To detect a point of contact are various physical
• Touch sensor arrangement consists of at least two on an electrically insulating substrate applied and selectively controllable electrically conductive layers that act as electrodes of the touch sensor. If a dielectric or electrically conductive material brought into the immediate vicinity of the sensor, this causes a change in capacitance between the two electrically conductive layers, which can be detected and evaluated with a corresponding evaluation.
• the two electrically conductive layers may be on opposite surfaces of the
• Substrate may be applied or, as described for example in JP20 3/20347, on one side of a substrate.
• the electrodes are typically in a 2
• the touch sensor In an application of the touch sensor in a touch screen, the touch sensor must be designed to be transparent in the optical range, in order to allow the user as unfettered a view of the display unit.
• the electrodes of a transparent conductive oxide (TCO, transparent conducting oxide) such as
• ITO Indium-tin oxide
• IZO indium-zinc oxide
• AZO aluminum-zinc oxide
• metallic contacting structures increase the electrical conductivity to a level sufficient for the function of the touch screen, they have the disadvantage that they affect the appearance of the touch screen due to their reflection properties in the optically visible range.
• the display unit If the display unit is switched off, if the display unit is dark, it can be visible to the user in ambient light, as the metallic structures strongly reflect the ambient light.
• Contacting structure to integrate a light-absorbing layer of a metal oxide such as MoO x , Mo x Ta y O z or Mo x Nb y O z .
• JP2013 / 20347 discloses a multilayer contacting structure of a metallic layer such as Mo and a light-absorbing layer of a metal oxide such as MoO x , wherein the light-absorbing oxide layer covers the metallic layer and so a part of the unwanted reflections is suppressed.
• a metallic layer such as Mo
• a light-absorbing layer of a metal oxide such as MoO x
• Sputtering made with the subsequent structuring of the individual layers by means of photolithography in conjunction with a wet-chemical etching process.
• Etching medium for the structuring of the individual layers does not need to be adjusted and thus manufacturing costs can be reduced.
• the etching properties are unsatisfactory, in particular in the aforementioned example of ⁇ / ⁇ , since the etching rate of the oxide layer MoO x differs significantly from the etch rate of the metallic layer (in a
• the contacting structures In addition to the optical requirements and an advantageous etching behavior, the contacting structures must meet further requirements.
• mobile devices are exposed during operation of high stress by environmental influences (corrosion, moisture, sweat, etc.) and damage to the contacting structure by corrosion or other reactions may occur, which may alter the electrical properties and affect the operation of the touch sensor.
• the contacting structure To meet requirements. For a sufficient measurement accuracy and measuring speed of the sensor, the contacting structure must have a sufficiently high electrical conductivity and as possible form a low contact resistance with the transparent, electrically conductive electrodes to be contacted. In addition, the contacting structure should, as far as possible, not be visually perceived by the user, neither in operation with one behind it
• the object of the present invention is to provide a touch sensor arrangement with a contacting structure in which the
• Contacting structure has the most advantageous properties in terms of the above requirements.
• the contact sensor arrangement has an optically transparent, electrically insulating substrate on which at least one optically transparent, electrically conductive sensor element is arranged. Typically, there are a plurality of sensor elements, which are selectively electrically controllable and allow more accurate location of a touch.
• the touch sensor arrangement furthermore has at least one contacting structure for the electrical contacting of the optically transparent, electrically conductive sensor elements, the contacting structure having at least one layer of a metal oxynitride according to the invention.
• the oxynitride-forming metal is molybdenum or a mixture which, in addition to molybdenum, is an element or a combination comprising several elements from the group of elements niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium.
• Metal oxynitride therefore has a composition of the type Mo a X b O c N d , where X is an element from the group Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr or a combination of several elements from this group Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr is.
• the formula Mo a X b O c N d is not to be understood as a chemical formula in the strict sense, but merely gives the relative atomic
• composition of metal oxynitride again.
• the indices a, b, c and d are therefore given in atomic percent and give a total of 1.
• X does not have to be present, therefore, the relative proportion b can be 0.
• X is preferably niobium or tantalum.
• b 0.
• the metal oxynitride need not be a highly pure composition, but also impurities may be present with other elements.
• the reflectance of the layer of the metal oxynitride is less than 20%, in particular less than 10%.
• touch is meant not only an immediate touch with direct physical contact, but also an approximation of one
• a touch sensor arrangement is an arrangement that not only detects when a touch sensor element is touched with a finger, stylus, or other object, but also when it is brought near a touch sensor element.
• Touch sensor elements can be designed in particular for the capacitive or resistive detection of a touch.
• optical transparent is meant that the respective layers or structures are largely permeable to the entire visible electromagnetic spectrum or a sub-spectrum thereof.
• reflectance also referred to as reflectivity, is the ratio between reflected and incident luminous flux
• Reflected luminous flux is also taken into account diffusely reflected or backscattered light. It is a photometric quantity in which the reflectance of the layer takes into account the wavelength-dependent sensitivity of the human eye (at
• the reflectance R in% at 550 nm was used in a first approximation. At this
• Wavelength is the sensitivity of the human eye
• the optically transparent, electrically conductive sensor elements may be a transparent conductive oxide (TCO) such as indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide (AZO), a transparent conductive polymer such as PEDOT: PSS (poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate)), carbon nanotubes or graphene.
• TCO transparent conductive oxide
• ITO indium tin oxide
• IZO indium zinc oxide
• AZO aluminum zinc oxide
• PEDOT poly(poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate)
• carbon nanotubes or graphene such as graphene.
• metal oxynitrides in a layer or intermediate layer of the contacting structure is advantageous both from the application side (advantageous optical reflection behavior, sufficiently high electrical conductivity) and from the point of view of the production of the touch sensor arrangement.
• the layers of the contacting structure are advantageous both from the application side (advantageous optical reflection behavior, sufficiently high electrical conductivity) and from the point of view of the production of the touch sensor arrangement.
• the layers of the contacting structure are advantageous both from the application side (advantageous optical reflection behavior, sufficiently high electrical conductivity) and from the point of view of the production of the touch sensor arrangement.
• Contact sensor arrangement prepared by the layers by means of known thin-film coating technologies such as physical vapor deposition (PVD) or CVD (chemical vapor deposition) initially applied over a large area on the substrate, then patterned by photolithographic processes and further processed in a subsequent etching process ,
• the layers of the metal oxynitride can be deposited using a metallic target of molybdenum or a molybdenum alloy with the supply of oxygen and nitrogen as reactive gases
• Metal oxide layer (as proposed for example in JP2013 / 20347), which occurs only with the supply of oxygen and reacts extremely sensitive to disturbances of the process parameters.
• Manufacturing process are the etching properties of the layer from the To name metal oxynitride.
• the layer of the metal oxynitride exhibits good etching properties in an industrially used mixture
• Phosphoric acid, nitric acid and acetic acid is well structured in industrial wet chemical etching process. It has been found that a metal oxynitride layer in which the ratio (in atomic percent) of oxygen to nitrogen is between 3: 1 and 9: 1, i. it is in the layer at least 3 times to a maximum of 9 times as many
• Substitute stoichiometric oxygen as proposed for example for the present application in JP2013 / 20347, significantly from. These are dark and have low reflectivity in the optical range, the electrical conductivity is lower and characterized by ion conduction. It has been found that by partially exchanging oxygen atoms with nitrogen atoms, the advantageous properties of molybdenum oxides with regard to optical reflection behavior can be retained and the electrical resistance values required for use in the touch sensor (electrical resistance Rs ⁇ 3000 ⁇ / area) can be achieved.
• the metal oxynitride layer Mo a X b O c N d 0 ⁇ b ⁇ 0.25 a; 0.5 ⁇ c ⁇ 0.75; 0.01 ⁇ d ⁇ 0.2 and a + b + c + d 1 and c + d ⁇ 0.8.
• the metal oxynitride 0 ⁇ b ⁇ 0.2 a; 0.55 ⁇ c.S0,7; 0.01.sd ⁇ 0.15 and a + b + c + d 1 and c + d ⁇ 0.8, in which the advantages described above can be achieved to a particularly high degree.
• the contacting structure in addition to the layer of the metal oxynitride still have one or more further layers of one or more other materials, in a preferred embodiment is the
• the contacting structure multi-layered, in particular two-ply or three-day, constructed.
• the contacting structure may be adjacent to the layer of the
• Metal oxynitride a metallic layer of Al, Mo, Cu, Ag or Au or an alloy based on one of these metals (by base it is meant that the main component component of the alloy is more than 90 atomic%), thereby providing higher electrical conductivity of the metals
• the layer of the metal oxynitride is the metallic layer (in the direction of the user of the
• Reflection properties of the contacting structure can additionally be optimized by exploiting interference effects by varying the layer thickness of the metal oxynitride layer.
• the touch sensor arrangement may be in accordance with the invention
• Embodiments for the resistive (i.e., resistance) or capacitive detection of a touch point to be formed Preferably, the resistive (i.e., resistance) or capacitive detection of a touch point to be formed.
• the resistive i.e., resistance
• capacitive detection of a touch point Preferably, the
• Touch sensor arrangement designed as a projective capacitive touch sensor as described by way of example in JP2013 / 20347.
• Touch sensor arrangement in this case has a plurality of sensor elements, which are arranged in two groups, arranged in a grid and act as electrodes of the touch sensor.
• grid arranged is understood that the touch-sensor elements are arranged in a predetermined pattern, for example, checkerboard-like, at different positions of the surface of the substrate.
• the grid is not limited to a rectangular arrangement. It is therefore a plurality of first sensor electrodes at different positions in a first direction and a plurality of second sensor electrodes at different positions in arranged a second direction, wherein the sensor electrodes on
• Intersection points are each separated by an electrically insulating layer.
• the electrically insulating layer interrupts a group of sensor electrodes at the intersections.
• Metal oxynitride having contacting structure bridges or contacts these originally electrically separate electrodes.
• the contacting structure according to the invention with the metal oxynitride layer can provide an electrical connection of the transparent electrodes to a control and evaluation unit for further processing of the electrical signals.
• a control and evaluation unit for further processing of the electrical signals.
• Touch sensor arrangement a contact with high electrical
• Conductivity can be achieved, which also meets the high requirements in terms of optical reflectivity.
• the touch sensor arrangement can form part of a touch-sensor display unit, a so-called touch panel.
• the touch sensor arrangement can be designed as a separate unit and be mounted on a display unit such as a liquid crystal (LCD) or OLED (organic light emitting diode) screen, forming a so-called "out-cell" touch sensor arrangement, see JP2013 / 20347 Fig. 3a
• a display unit such as a liquid crystal (LCD) or OLED (organic light emitting diode) screen
• Touch sensor assembly to be more integrated into the display unit.
• individual components of the display unit For example, individual components of the
• Touch sensor assembly such as the transparent substrate simultaneously form components of the LCD screen ("on-cell"
• Touch sensor arrangement thus divides the substrate with the screen behind it and has no separate substrate with respect to the screen, cf. JP2013 / 20347 Fig. 3b) or even more integrated into the display unit, "in-cell"
• Touch sensor arrangement cf. US8243027. It should be noted that in a multilayer embodiment of the inventive contacting structure of a metal layer and a metal oxynitride in the sequence of Layers the layer with the metal oxynitride of the display unit of the metallic layer is further spaced than the metallic layer. In the direction of the user of the touch panel so is the
• Preceded metal oxynitride layer of the metal layer and covers the
• FIG. 1 a and Fig. 2a are identical and show schematically a plan view of the structure of a touch sensor arrangement according to the invention, wherein in Fig. 1 b and Fig. 2b each of the layered structure different
• Touch sensor arrangement 0 is part of a touch panel and has an optically transparent substrate 1 made of an electrically insulating material, for example made of glass or transparent plastic.
• the substrate of the touch sensor arrangement simultaneously forms the color filter substrate of an LCD screen, but the substrate can also be embodied as a separate substrate
• the electrodes required for capacitive sensing are formed by a plurality of layered ones
• checkerboard patterns arranged in a grid of rows and columns on the same side of the substrate and from an optical
• ITO indium tin oxide
• Touch sensor elements 2x is initially electrically interrupted. It follows the electrically insulating layer 3. The group of touch sensor elements 2x are in the horizontal direction by a bridging
• Embodiment three-layer structure and has a layer of a molybdenum oxynitride 5 and a metallic layer 6 of a highly conductive metal such as Al, Mo, Cu, Ag or Au or an alloy based on one of these metals.
• a further metallic layer 7 of Mo, W, Ti, Nb or Ta or an alloy based on one of these metals is provided as the cover layer, preferably the same metal or alloy is used which is used in the oxynitride layer.
• This layer 7 serves as a diffusion barrier and / or protective layer (against mechanical damage, corrosion, moisture, sweat, etc.) for the underlying layer 6 of the highly conductive metal.
• the layer of molybdenum oxynitride is arranged in the direction of view 20 of the user of the touch panel of the two metal layers and covers them.
• the respective lines of the touch-sensor elements 2 x are electrically connected to a control and evaluation electronics (not shown in the figure), just like the respective columns of the touch-sensor elements 2 y.
• the control and evaluation electronics detects capacity changes, which are caused by a touch, and evaluates these with respect to the
• the electrical connection is made at least in the area of the touch panel visible to the user by a
• Contacting structure 4 is constructed in three layers and a layer 5 of a molybdenum oxynitride, a metallic layer 6 of Al, Mo, Cu, Ag or Au or an alloy based on one of these metals and a metallic layer 7 of Mo, W, Ti, Nb or Ta or an alloy based on one of these metals.
• the applied layers are processed by photolithography and subsequent wet-chemical etching process with an etching solution of phosphoric acid, nitric acid and acetic acid (PAN etching solution) structured.
• PAN etching solution etching solution of phosphoric acid, nitric acid and acetic acid
• Molybdenumoxynitriden manufactured with different composition the properties of which are compared in Table 1 with those of corresponding metal, metal oxide and metal nitride layers.
• Targets of pure molybdenum targets of an alloy of molybdenum with 6 atomic percent (at.%) Of tantalum and targets of an alloy of molybdenum with 10 at.% Of niobium were respectively used as sputtering targets.
• the molybdenum oxynitride layers were reactively sputtered from the metallic targets using an Ar / O 2 / N 2 mixture.
• the relative proportion of reactive gases in the process was about 33 vol.% 02 for the oxides and about 23 vol.% O 2 and 15 vol.% N 2 for the
• the process gas pressure was about 5 10-3 mbar.
• glass substrates Cornning Eagle XG, 50 ⁇ 50 ⁇ 0.7 mm 3
• the third metal layer was omitted because this has no influence on the measurement results.
• the reflectivity was through the glass substrate (viewing direction of the observer 20) using a Perkin Elmer Lambda 950
• Photospectrometer measured. In order to obtain the lowest possible reflectivity, the layer thickness of the molybdenum oxynitrides was varied in a range of 35 to 75 nm, with the best results in the range 40 to 60 nm could be achieved.
• Reference materials were measured from samples in which the glass substrates were coated with a 55nm thick layer. The measurement was carried out using the 4-point method (commercially available 4-point measuring head).
• wet etching rate layers having a thickness of 300 nm each were used.
• the wet etch rate was determined in a stirred PAN solution with 66% phosphoric acid, 10% acetic acid, 5% nitric acid and water (balance) at 40 ° C.
• the samples were each for 5 seconds in the Immersed etching solution and then rinsed and dried.
• the dry samples were then weighed on a precision balance. These steps were repeated until the entire layer was dissolved.
• the etch rate was calculated from the mass decrease over the etch time. Tab. 1.
• Molybdenum oxides improved Refiexions .
• the difference between the Wet etch rate of the metal or alloy and the wet etch rate of the corresponding oxynitride can be reduced.

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