WO2015046876A3 - Solar cell having three-dimensional p-n junction structure and method for manufacturing same - Google Patents

Solar cell having three-dimensional p-n junction structure and method for manufacturing same Download PDF

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Publication number
WO2015046876A3
WO2015046876A3 PCT/KR2014/008895 KR2014008895W WO2015046876A3 WO 2015046876 A3 WO2015046876 A3 WO 2015046876A3 KR 2014008895 W KR2014008895 W KR 2014008895W WO 2015046876 A3 WO2015046876 A3 WO 2015046876A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
dimensional
type semiconductor
thin film
semiconductor thin
Prior art date
Application number
PCT/KR2014/008895
Other languages
French (fr)
Korean (ko)
Other versions
WO2015046876A2 (en
Inventor
성시준
박시내
김대환
강진규
황대규
Original Assignee
재단법인대구경북과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130116215A external-priority patent/KR101541449B1/en
Priority claimed from KR1020140097247A external-priority patent/KR101674399B1/en
Application filed by 재단법인대구경북과학기술원 filed Critical 재단법인대구경북과학기술원
Priority to US15/025,677 priority Critical patent/US10134930B2/en
Publication of WO2015046876A2 publication Critical patent/WO2015046876A2/en
Publication of WO2015046876A3 publication Critical patent/WO2015046876A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

The present invention provides a solar cell having a three dimensional P-N junction structure, the solar cell comprising: a substrate having an upper surface on which a rear electrode is coated; a P-type semiconductor thin film which is formed on the upper surface of the rear electrode, has a three-dimensional porous structure, and is configured by crystal grains of a P-type semiconductor material; an N-type buffer layer coated and formed on the crystal grain surface of the P-type semiconductor thin film; and a transparent electrode which corresponds to an upper portion of the P-type semiconductor thin film and has a crystal grain surface on which the N-type buffer layer is formed. In the solar cell according to the present invention, which is a P-N junction solar cell including a photoactive film having a three-dimensional structure, the N-type buffer layer is formed on the crystal grain surface of the P-type semiconductor thin film having a three dimensional structure, thereby achieving more improved photoelectric conversion efficiency than that of a solar cell having a P-N junction structure according to the related art.
PCT/KR2014/008895 2013-09-30 2014-09-24 Solar cell having three-dimensional p-n junction structure and method for manufacturing same WO2015046876A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/025,677 US10134930B2 (en) 2013-09-30 2014-09-24 Solar cell having three-dimensional P-N junction structure and method for manufacturing same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020130116215A KR101541449B1 (en) 2013-09-30 2013-09-30 Method for manufacturing porous CZTS-based thin film
KR10-2013-0116215 2013-09-30
KR10-2014-0097247 2014-07-30
KR1020140097247A KR101674399B1 (en) 2014-07-30 2014-07-30 3 P-N dimentional P-N junction solar cell and the preparation method thereof

Publications (2)

Publication Number Publication Date
WO2015046876A2 WO2015046876A2 (en) 2015-04-02
WO2015046876A3 true WO2015046876A3 (en) 2015-05-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2014/008895 WO2015046876A2 (en) 2013-09-30 2014-09-24 Solar cell having three-dimensional p-n junction structure and method for manufacturing same

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US (1) US10134930B2 (en)
WO (1) WO2015046876A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107123693B (en) * 2017-04-14 2020-05-22 华南理工大学 Efficient CdTe nanocrystalline solar cell with high-transparency window layer material based on solution method processing and preparation method thereof
CN114452985B (en) * 2022-02-14 2024-04-19 温州大学 CuSbS for photocatalytic carbon dioxide2Method for preparing nano tube material

Citations (4)

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Publication number Priority date Publication date Assignee Title
KR20090104304A (en) * 2008-03-31 2009-10-06 영남대학교 산학협력단 Bulk heterojunction solar cell and Method of manufacturing the same
US20110315201A1 (en) * 2010-06-25 2011-12-29 National Taiwan University Solar cell and method for fabricating the heterojunction thereof
KR20130057915A (en) * 2011-11-24 2013-06-03 연세대학교 산학협력단 Hybrid ink for czts film
KR20130089350A (en) * 2012-02-02 2013-08-12 한국에너지기술연구원 Preparation method of cigs-based compound thin film using flux with low melting point and ci(g)s-based compound thin film preparated by the same

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US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US9105776B2 (en) * 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
EP2312666A4 (en) * 2008-08-06 2012-08-22 Sumitomo Chemical Co Photoelectric conversion element
KR20110023164A (en) * 2009-08-28 2011-03-08 삼성전자주식회사 Optoelectronic device
WO2011029197A1 (en) 2009-09-08 2011-03-17 The University Of Western Ontario Electrochemical method of producing copper indium gallium diselenide (cigs) solar cells
JP5383826B2 (en) * 2009-12-18 2014-01-08 京セラ株式会社 Manufacturing method of semiconductor layer and manufacturing method of photoelectric conversion device
KR101149474B1 (en) 2010-03-25 2012-06-08 아주대학교산학협력단 Preparation method of cis-based or czts-based colloidal solution by wet type ball milling process and method for preparing cis-based or czts-based compound thin film as an optical absorber layer of solar cell using the same
KR20130121129A (en) 2010-11-22 2013-11-05 이 아이 듀폰 디 네모아 앤드 캄파니 Inks and processes to make a chalcogen-containing semiconductor
US9159850B2 (en) 2012-04-25 2015-10-13 Guardian Industries Corp. Back contact having selenium blocking layer for photovoltaic devices such as copper—indium-diselenide solar cells
US9331282B2 (en) * 2012-09-14 2016-05-03 Toray Industries, Inc. Conjugated polymer, and electron donating organic material, material for photovoltaic device and photovoltaic device using the conjugated polymer
US9112095B2 (en) * 2012-12-14 2015-08-18 Intermolecular, Inc. CIGS absorber formed by co-sputtered indium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090104304A (en) * 2008-03-31 2009-10-06 영남대학교 산학협력단 Bulk heterojunction solar cell and Method of manufacturing the same
US20110315201A1 (en) * 2010-06-25 2011-12-29 National Taiwan University Solar cell and method for fabricating the heterojunction thereof
KR20130057915A (en) * 2011-11-24 2013-06-03 연세대학교 산학협력단 Hybrid ink for czts film
KR20130089350A (en) * 2012-02-02 2013-08-12 한국에너지기술연구원 Preparation method of cigs-based compound thin film using flux with low melting point and ci(g)s-based compound thin film preparated by the same

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US20160240709A1 (en) 2016-08-18
US10134930B2 (en) 2018-11-20
WO2015046876A2 (en) 2015-04-02

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