WO2015046766A1 - Électrode transparente et son procédé de fabrication - Google Patents

Électrode transparente et son procédé de fabrication Download PDF

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Publication number
WO2015046766A1
WO2015046766A1 PCT/KR2014/008082 KR2014008082W WO2015046766A1 WO 2015046766 A1 WO2015046766 A1 WO 2015046766A1 KR 2014008082 W KR2014008082 W KR 2014008082W WO 2015046766 A1 WO2015046766 A1 WO 2015046766A1
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Prior art keywords
transparent electrode
layer
forming
voltage
resistance state
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PCT/KR2014/008082
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English (en)
Korean (ko)
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김태근
이병룡
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고려대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a transparent electrode and a method of manufacturing the same, and more particularly to a transparent electrode having a high electrical conductivity while having a good electrical conductivity, including the ultraviolet region and a method of manufacturing the same.
  • Transparent electrodes are used in various fields such as LEDs, solar cells, medical UV sterilizers, fisheries, and the like, and their application fields and their demands are increasing.
  • the transparent electrode is widely used in the LED field, the current transparent electrode technology applied to the LED can be applied to a portion (365nm ⁇ 400nm) of the visible region (400nm-800nm) and the entire ultraviolet region (10nm-400nm).
  • Indium Tin Oxide (ITO) -based technology is the main focus.
  • the transmittance shows the transmittance when the ITO transparent electrode is formed on the P-GaN semiconductor layer according to the prior art. As shown in FIG. 1, the transmittance shows 80% or more in the wavelength range of 350 nm or more, but the transmittance decreases rapidly in the ultraviolet range of short wavelength. In particular, the transmittance is 20% or less in the short wavelength region of 280 nm or less. It can be seen that decreases.
  • Another prior art to solve this problem is to form a metal electrode pad directly without forming a transparent electrode on a semiconductor layer, such as p-AlGaN, but the difference in work function between the metal and the semiconductor layer is too large Ohmic Contact is made Not only does it occur, but the current is concentrated in the metal electrode pad and is not supplied to the entire active layer, thereby causing a problem that the amount of light generated in the active layer is significantly reduced.
  • An object of the present invention is to provide a transparent electrode forming method exhibiting high transmittance and high conductivity not only in the visible light region but also in the short ultraviolet light region, and exhibiting good ohmic contact characteristics with the semiconductor layer, and a semiconductor device manufactured using the same. It is.
  • a voltage (forming voltage) above a threshold voltage inherent to a material is applied to form a conductive filament therein, whereby the resistance state is in a high resistance state.
  • a transparent electrode layer formed of a resistance change material changed to a low resistance state; And an electric field concentration layer formed in the transparent electrode layer to reduce the forming voltage.
  • the electric field concentrating layer of the transparent electrode according to the preferred embodiment of the present invention may be formed in the middle of the transparent electrode layer, and may be formed of any one of nanoparticles, nanowires, and conductive polymers.
  • the electric field concentration layer of the transparent electrode is formed on the interface between the transparent electrode layer and the semiconductor layer, it may be formed of any one of nanoparticles, nanowires, and conductive polymers.
  • the electric field concentration layer of the transparent electrode may be formed in a pattern corresponding to the electrode pad pattern formed on the transparent electrode.
  • the transparent electrode according to another embodiment of the present invention for solving the above problems is a transparent electrode formed on the semiconductor layer, the transparent electrode is applied to a voltage (forming voltage) or higher than the threshold voltage inherent to the material inside
  • the conductive filaments are formed in the resistive material, and the resistance state is formed of a resistance change material changed from a high resistance state to a low resistance state, and includes a plurality of transparent electrode layers having conductive filaments formed therein.
  • At least two layers of the plurality of transparent electrode layers of the transparent electrode according to the preferred embodiment of the present invention may be formed of a resistance change material having a different band gap.
  • the plurality of transparent electrode layers of the transparent electrode according to the preferred embodiment of the present invention may be arranged to reduce the difference in refractive index with the air toward the top.
  • the projection electrode according to another embodiment of the present invention for solving the above problems is a transparent electrode formed on the semiconductor layer, a voltage (forming voltage) or higher than the threshold voltage inherent to the material is applied to the conductive filament therein
  • the transparent electrode according to the preferred embodiment of the present invention may be formed so that a portion of the transparent conductive layer is exposed to the outside.
  • the transparent conductive layer between the transparent conductive layer and the semiconductor layer of the transparent electrode may further include a transparent conductive layer formed of a resistance change material formed with a conductive filament.
  • the method for forming a transparent electrode for solving the above problems, the conductive filament is formed therein when a voltage (forming voltage) higher than the threshold voltage inherent to the (a1) material is applied, Forming a lower transparent electrode layer using a resistance change material whose resistance state is changed from a high resistance state to a low resistance state; (a2) forming an electric field concentration layer on the lower transparent electrode layer; (b) forming an upper transparent electrode layer on the field concentrating layer by using a resistance change material; And (c) applying a forming voltage to the upper transparent electrode layer to form conductive filaments inside the transparent electrode layers.
  • a voltage (forming voltage) higher than the threshold voltage inherent to the (a1) material is applied, Forming a lower transparent electrode layer using a resistance change material whose resistance state is changed from a high resistance state to a low resistance state; (a2) forming an electric field concentration layer on the lower transparent electrode layer; (b) forming an upper transparent electrode layer on the field concentrating layer by using a resistance change material; And (c) applying a
  • the transparent electrode forming method for solving the above problems, (a2) forming an electric field concentration layer on the semiconductor layer; (b) When a voltage (forming voltage) higher than a threshold voltage inherent to the material is applied to the field concentrating layer, a conductive filament is formed therein, whereby a resistance change material whose resistance state is changed from a high resistance state to a low resistance state is formed. Forming a transparent electrode layer by using; And (c) applying a forming voltage to the transparent electrode layer to form a conductive filament inside the transparent electrode layer.
  • the electric field concentration layer may be formed using any one of nanoparticles, nanowires, and a conductive polymer.
  • the transparent electrode forming method for solving the above problems, (a) by applying a voltage (forming voltage) above the threshold voltage inherent to the material to form a conductive filament therein, Forming a plurality of transparent electrode layers of a resistance change material whose resistance state is changed from a high resistance state to a low resistance state; And (b) applying a forming voltage to the plurality of transparent electrode layers to form conductive filaments therein.
  • the transparent electrode forming method for solving the above problems, (a) by applying a voltage (forming voltage) above the threshold voltage inherent to the material to form a conductive filament therein, Forming a transparent electrode layer of a resistance change material whose resistance state is changed from a high resistance state to a low resistance state; (b) applying a forming voltage to the transparent electrode layer to form a conductive filament in the transparent electrode layer, thereby changing the resistance state to a low resistance state; And (c) repeatedly performing steps (a) and (b) one or more times sequentially to further form a transparent electrode layer having conductive filaments formed therein.
  • a voltage forming voltage
  • At least two layers of the plurality of transparent electrode layers included in the transparent electrode may be formed of a resistance change material having a different band gap.
  • the plurality of transparent electrode layers may be arranged to decrease the difference in refractive index with air toward the top.
  • the transparent electrode forming method for solving the above problems, (a) forming a transparent conductive layer having a higher conductivity because the band gap is smaller than the transparent electrode layer; (b) a conductive filament is formed therein by applying a voltage (forming voltage) higher than a threshold voltage inherent to the material on the transparent conductive layer, whereby the resistance state is transparent to a resistance change material that is changed from a high resistance state to a low resistance state. Forming an electrode layer; And (d) applying a voltage between the transparent conductive layer and the transparent electrode layer to form a conductive filament inside the transparent electrode layer.
  • the step (b), the transparent electrode layer is formed so that a portion of the transparent conductive layer is exposed to the outside
  • the step (d) the external A conductive filament may be formed inside the transparent electrode layer by applying a voltage between a portion of the transparent conductive layer and the transparent electrode layer.
  • the transparent conductive layer may be formed on the transparent electrode layer formed of a resistance change material formed therein.
  • a transparent electrode is formed of a resistance change material made of a transparent material whose resistance state is changed from a high resistance state to a low resistance state by an applied electric field, and a voltage is applied to the transparent electrode to reduce the resistance state of the transparent electrode.
  • the transparent electrode is made conductive by performing a forming process to change the shape of the transparent electrode, thereby exhibiting good ohmic characteristics with a semiconductor layer formed under or above the transparent electrode, It is possible to form a transparent electrode exhibiting high transmittance.
  • the present invention can be easily formed at a lower voltage by concentrating an electric field by including nanoparticles in the transparent electrode formed of a resistance change material, thicker transparent electrode when the same forming voltage is applied It can form to enhance the strength of the transparent electrode and the safety of the device.
  • the present invention can form a transparent electrode by stacking a plurality of transparent electrode layer formed of a resistance change material to form a transparent electrode, thereby enhancing the strength of the transparent electrode and the safety of the device.
  • a portion of the plurality of transparent electrode layers with a material that is well formed, it is possible to reduce the forming voltage while increasing the thickness of the transparent electrode.
  • the plurality of transparent electrode layers are stacked to form a transparent electrode
  • the plurality of transparent electrode layers by stacking the plurality of transparent electrode layers such that a difference in refractive index with the external air layer decreases toward the top, the light generated in the semiconductor layer is prevented from total reflection.
  • the light extraction efficiency can be improved.
  • the present invention by forming a transparent conductive layer in a pattern corresponding to the electrode pad pattern formed on the transparent electrode on the semiconductor layer, to facilitate the forming while minimizing the reduction in light extraction efficiency, to form a thick thickness of the transparent electrode Therefore, the strength of the transparent electrode and the safety of the device can be enhanced.
  • 1 is a diagram showing the transmittance when the ITO transparent electrode is formed on the P-GaN semiconductor layer according to the prior art.
  • FIG. 2 is a diagram illustrating a structure of a transparent electrode and a semiconductor device including the same according to the first embodiment of the present invention.
  • 3A to 3C are diagrams for explaining the properties of the resistance change material.
  • 4A to 4E illustrate the transmittance characteristics, ohmic characteristics before performing the forming process, contact resistance characteristics before performing the forming process, and performing the forming process according to the first embodiment in which a transparent electrode is formed using Ga 2 O 3 material on a p-GaN semiconductor layer.
  • the following ohmic characteristics and contact resistance characteristics after performing the forming process are respectively shown.
  • FIG 5 illustrates a structure of a transparent electrode and a semiconductor device including the same according to the second embodiment of the present invention.
  • FIG. 6 is a view showing the structure of a transparent electrode according to a third embodiment of the present invention.
  • FIG. 7A and 7B illustrate a structure of a transparent electrode and a method of forming a transparent electrode according to a fourth preferred embodiment of the present invention.
  • FIGS. 8A and 8B illustrate a structure of a transparent electrode and a method of forming a transparent electrode according to a fifth exemplary embodiment of the present invention.
  • the present invention is applied to all the transparent electrodes (OLED transparent electrode, solar cell transparent electrode, LED transparent electrode, etc.) in contact with the semiconductor layer, the contents described below are for explaining the technical idea of the present invention It should be noted that this is only one embodiment.
  • a transparent electrode and a semiconductor device having the same according to the first exemplary embodiment of the present invention include a transparent electrode on the semiconductor layer 10 such that the semiconductor layer 10 and the transparent electrode 20 are in contact with each other. 20 is formed, a metal electrode pad 30 is formed on the transparent electrode 20, and a conductive filament (or metal filament) is formed inside the transparent electrode.
  • the semiconductor layer 10 includes not only an inorganic semiconductor layer and an organic semiconductor layer, but also a concept including all materials through which charge can flow.
  • the inorganic semiconductor layer includes a single element semiconductor made of a single element such as Si and Ge.
  • the inorganic semiconductor layer is a compound such as a Nitride compound semiconductor layer (GaN, AlGaN, InN, InGaN, AlN, etc.) and an oxide compound compound semiconductor layer (GaO, ZnO, CoO, IrO2, Rh2O3, Al2O3, SnO, etc.).
  • the concept includes a semiconductor layer.
  • the organic semiconductor layer is typically a concept including a material forming an electron (hole) injection layer and an electron (hole) transport layer of an organic light emitting diode (OLED).
  • OLED organic light emitting diode
  • the surface in contact with the transparent electrode 20 of the semiconductor layer 10 is preferably doped with a p type or n type.
  • the transparent electrode of the present invention is formed of a transparent material (resistance change material) whose resistance state is changed by an applied electric field, and a conductive filament is formed therein by forming (forming process or electric break down). It is.
  • a resistance change material is mainly used in the field of resistive RAM (ReRAM), and when a voltage higher than a threshold inherent to the material is applied to the material, electro-forming is performed, so that the resistance state of the material, which is an insulator at first, is a high resistance state. It is changed to a low resistance state at to show conductivity.
  • FIG. 3A to 3C are diagrams illustrating the characteristics of such a resistance change material.
  • a voltage above a threshold is applied to a resistance change material that is an insulator
  • an electrode metal material is diffused into the thin film by an electrical forming process or a resistance structure as shown in FIG. 3A due to a defect structure in the thin film.
  • Conductive filaments are formed inside the change material. Thereafter, even when the voltage applied to the material is removed, the conductive filament 22 is maintained, and current flows through the conductive filament 22, so that the resistance state of the material is maintained in the low resistance state.
  • the resistance change material (AlN) shows an insulator characteristic before the forming process and then shows the I-V characteristic of the metal after the forming process.
  • the conductive filament formed in the transparent electrode may be SET or RESET as shown in FIG. 3B using the JOULE-HEATING effect.
  • Figure 3c is a graph showing how stable the conductive filament can be formed after the formation, as shown by the red dotted line of the graph shows that the low resistance state can be stably maintained for 10 years after the formation of the conductive filament Can be.
  • a transparent conductive oxide-based material SiO2, Ga2O3, Al2O3, ZnO, ITO, etc.
  • a transparent conductive Nitride-based material Si3N4, AlN, GaN, InN, etc.
  • Transparent conductive polymer-based materials polyaniline (PANI), poly (ethylenedioxythiophene) -polystyrene sulfonate (PEDOT: PSS), etc.
  • transparent conductive nanomaterials CNT, CNT-oxide, Graphene, Graphene-oxide, etc.
  • any material that is transparent and exhibits the above-described resistance change characteristics may be used to form the transparent electrode of the present invention.
  • the meaning of the materials having conductivity is that they have conductivity by a forming process.
  • 4A to 4E illustrate the transmittance characteristics, ohmic characteristics before performing the forming process, contact resistance characteristics before performing the forming process, and forming process according to the first embodiment in which a transparent electrode is formed using Ga 2 O 3 material on a p-GaN semiconductor layer. The subsequent ohmic characteristics and the contact resistance characteristics after performing the forming process are shown, respectively.
  • a transparent electrode thin film (thickness: 80 nm) was formed of Ga 2 O 3 material on a p-GaN semiconductor layer commonly used in LEDs.
  • the Ga 2 O 3 transparent electrode of the illustrated example exhibits transmittance of 80% or more with respect to light in an ultraviolet region having a wavelength of 264 nm or more. This also can be seen that the transmittance is significantly improved compared to the conventional ITO-based transparent electrode showing a transmittance of 20% shown in FIG.
  • FIGS. 4B to 4E are measured by using ohmic characteristics (FIGS. 4B and 4D) and TLM (Transfer Length Method) patterns when the distance between the measuring electrodes is 2 ⁇ m, 4 ⁇ m, 6 ⁇ m, 8 ⁇ m, and 10 ⁇ m. Resistance characteristics (FIGS. 4C and 4E) are shown.
  • the forming process is carried out previously and the transparent electrode, independent of the voltage applied is of 1.0 * 10 -11 A and out to find out the current flow, not at all It can be seen that it does not exhibit ohmic characteristics.
  • the ohmic contact resistance characteristic also shows no linearity at all.
  • Ga 2 O 3 transparent electrode is at least 80% transmittance with respect to light of ultraviolet region having a wavelength of more than 264nm shows a result of measurement using the TLM pattern before performing the forming step exhibits a contact resistance of 51,680 ⁇ cm -2, performed after the forming step is 2.64 * 10 -5 exhibits a contact resistance of ⁇ cm -2 superior conductivity It can be seen that not only is it improved, but also shows good ohmic characteristics.
  • the transparent electrode was formed of a single layer, and thus, the transparent electrode was formed of a very thin thin film.
  • the above-mentioned resistance change material for forming the transparent electrode has a large band gap and thus a very large resistance, and thus, when the thickness thereof becomes thick, it is difficult to form an appropriate amount of conductive filaments.
  • the strength of the transparent electrode itself may be weakened, and thus, the overall strength of the semiconductor device may be weakened.
  • Transparent electrodes according to the second to fifth embodiments of the present invention described below solve this problem.
  • FIG 5 illustrates a structure of a transparent electrode and a semiconductor device including the same according to the second embodiment of the present invention.
  • the transparent electrode 500 according to the second exemplary embodiment may be formed of a resistance change material on the semiconductor layer 10.
  • the upper transparent electrode layer 511 and the lower transparent electrode layer 512, and the electric field concentrating layer 520 is formed in the transparent electrode layer (511, 512) to reduce the forming voltage.
  • the electric field concentrating layer 520 is composed of a plurality of nanoparticles, nanowires, conductive polymers, etc. (hereinafter referred to as "nanoparticles", etc.), and in the process of forming the transparent electrode layer 510 formed of a resistance change material, the electrode
  • nanoparticles nanoparticles
  • the formation of the conductive filaments 22 is possible by applying a relatively small voltage.
  • the conductive filament 22 can be formed in the transparent electrode layer thicker than the case where the electric field concentration layer is not included.
  • the thickness of the transparent electrode 510 can be formed to be thicker, thereby further enhancing the strength of the transparent electrode 510 and the safety of the device.
  • the nanoparticles are configured in the form of particles having a small aspect ratio.
  • the current concentrating layer 520 is formed in a pattern corresponding to the electrode pad pattern (not shown) formed on the transparent electrode 500, it is preferably formed so as not to impair the transmittance of light.
  • a plurality of conductive filaments 22 are formed in the transparent electrode layer 510, and each of the conductive filaments 22 forms nanoparticles 520 constituting the current concentrating layer 520.
  • the current path is formed through the semiconductor layer 10.
  • the conductive filament 22 is formed through the nanoparticles 520 of the current concentrating layer, it is easier to adjust the spacing of the nanoparticles 520 constituting the electric field concentrating layer 520.
  • the spacing of the conductive filaments 22 can be adjusted, thus forming uniform conductive filaments 22.
  • the lower transparent electrode layer 512 is formed on the semiconductor layer 10 by using a resistance change material, and the electric field concentration layer ( 520 is formed.
  • the method of forming the electric field concentrating layer 520 can be variously applied. In the simplest method, a solution containing nanoparticles or the like is applied onto the lower transparent electrode layer, and the solution is evaporated. Besides After depositing a thin metal, a method of forming nanoparticles through heat treatment may be applied.
  • the upper transparent electrode layer 511 is formed on the electric field concentrating layer 520 with the same resistance material as the resistance change material used to form the lower transparent electrode layer 512.
  • the electric field concentrating layer 520 is disposed in an arbitrary region on the lower transparent electrode layer 512 with nanoparticles or the like, a part of the upper transparent electrode layer 511 is formed on the lower transparent electrode layer 512, and a part of the nanoparticles is formed. Since the lower transparent electrode layer 512 and the upper transparent electrode layer 511 are connected to one, so as to form the transparent electrode layer 510, and the nanoparticles 520 are included at the same height in the middle of the transparent electrode layer. Has a structure.
  • the conductive filament 22 is formed inside the transparent electrode layer 510 by applying a voltage higher than a threshold voltage inherent to the transparent electrode to complete the transparent electrode.
  • FIG. 6 is a view showing the structure of a transparent electrode according to a third embodiment of the present invention.
  • the transparent electrode of the third embodiment is not formed in the middle of the transparent electrode layer, but is formed on the interface with the semiconductor layer 10. There is a difference.
  • the electric field concentrating layer 620 of the third embodiment may be formed on the semiconductor layer 10 using nanoparticles made of the same material as the electric field concentrating layer 520 of the second embodiment.
  • the nanoparticles 620 may be formed on the semiconductor layer 10 in the same manner as in the second embodiment, and may be formed to correspond to an electrode pad pattern (not shown) to be formed on the transparent electrode 600. It may be formed so as not to impair the transmittance of light.
  • a resistance change material is deposited on the electric field concentrating layer 620 to form a transparent electrode layer 610, and a conductive filament 22 is formed inside the transparent electrode layer 610 so that the resistance state of the transparent electrode layer 610 is increased. It is changed from the high resistance state to the low resistance state.
  • the conductive filaments 22 formed in the transparent electrode 600 are connected to the semiconductor layer 10 through the nanoparticles 620 as in the second embodiment, and thus, the nanoparticles and the like. Since the electric field is concentrated at 620, the conductive filament 22 can be formed with a relatively low forming voltage, and a thicker thickness when the same voltage is applied as compared with the case where the electric field concentrating layer 620 is not formed.
  • the transparent electrode 600 may be formed to improve the strength of the transparent electrode 600 and the safety of the device.
  • the conductive filaments 22 are formed through the nanoparticles 620 and the like of the electric field concentrating layer, by adjusting the intervals of the nanoparticles 620 constituting the electric field concentrating layer, the intervals of the conductive filaments 22 are more easily achieved. Can be adjusted, and thus uniform conductive filaments 22 can be formed.
  • the electric field concentrating layer 620 is formed on the semiconductor layer 10. Since the method of forming the electric field concentrating layer 620 is the same as in the above-described second embodiment, a detailed description thereof will be omitted.
  • the resistance change material is deposited on the semiconductor layer 10 and the electric field concentrating layer 620 to form the transparent electrode layer 610, thereby including the transparent electrode 600 including the transparent electrode layer 610 and the electric field concentrating layer 620. ).
  • the conductive filament 22 is formed inside the transparent electrode layer 610 by contacting the electrode probe 100 on the transparent electrode layer 610 and applying a voltage higher than a threshold voltage inherent to the transparent electrode layer 610. Complete 600.
  • FIG. 7A and 7B illustrate a structure of a transparent electrode and a method of forming a transparent electrode according to a fourth preferred embodiment of the present invention.
  • the transparent electrode according to the fourth embodiment of the present invention is characterized by including a plurality of transparent electrode layers, the thickness of each transparent electrode layer may be the same, or may be different from each other.
  • the material of each transparent electrode layer may also be a resistance change material of the same material having the same band gap, or may be a resistance change material having a different band gap.
  • the semiconductor layer 10 is a device that emits light, such as an LED or an OLED
  • the plurality of transparent electrode layers constituting the transparent electrode are made of a material having different refractive indices, and the more transparent electrode layers positioned above
  • light generated in the semiconductor layer 10 may be totally reflected by the transparent electrode and prevent the light from flowing back into the semiconductor layer 10.
  • the transparent electrode 700 according to the fourth embodiment illustrated in FIG. 7A includes a plurality of transparent electrode layers, and at least two layers of the transparent electrode layers may have different band gaps. It was formed of a material having.
  • the transparent electrode 710 is formed by sequentially forming a first transparent electrode layer 711 and a second transparent electrode layer 712.
  • the first transparent electrode layer 711 is formed of a resistance change material in which the conductive filament 22 is easily formed by foaming because the band gap is smaller than that of the second transparent electrode layer 712, and the second transparent electrode layer 712 is formed.
  • Silver was formed using a resistance change material having a larger band gap than that of the first transparent electrode layer and having better transmittance to light in all regions including the ultraviolet region.
  • the transparent electrode has a structure in which the third transparent electrode layer 713, the fourth transparent electrode layer 714, and the third transparent electrode layer 713 are sequentially formed.
  • the fourth transparent electrode layer 714 is formed of a resistance change material in which the conductive filament 22 is easily formed by foaming because the band gap is smaller than that of the third transparent electrode layer 713.
  • 713 may be formed using a resistance change material having a greater band gap than that of the fourth transparent electrode layer 714 and having better transmittance with respect to light in all regions including the ultraviolet region.
  • the third transparent electrode layer 713 and the fourth transparent electrode layer 714 illustrated in FIG. 7A (b) may include the second transparent electrode layer 712 and the first transparent electrode layer 711 illustrated in FIG. 7A (a). And each of the same material).
  • the total reflection effect may be reduced as the transparent electrode layer having a small difference in refractive index from air is disposed on the upper portion.
  • the first transparent electrode layer 711 may be formed of a resistance change material in which the conductive filament 22 is easily formed by foaming because the band gap is smaller than that of the second transparent electrode layer 712. As shown.
  • a second transparent electrode layer 712 is deposited on the first transparent electrode layer 711.
  • the second transparent electrode layer 712 may be formed using a resistance change material having a larger band gap than the first transparent electrode layer 711 and having a better transmittance to light in all regions including the ultraviolet region.
  • the electrode probe 100 is contacted with the second transparent electrode layer 712 positioned at the top to apply a voltage to the second transparent electrode 710.
  • the resistance state of the transparent electrode 710 is changed from a high resistance state to a low resistance state.
  • the method of forming the transparent electrode illustrated in FIG. 7A (b) may be similar to the method of forming the transparent electrode illustrated in FIG. 7A (a).
  • the third transparent electrode layer 713 and the fourth transparent electrode layer 4 may be formed on the semiconductor layer 10.
  • the transparent electrode layers 713, 714, and 715 are formed by contacting the electrode probe 100 with the fifth transparent electrode layer 715 and applying a voltage thereto.
  • the transparent electrode is completed by forming the conductive filament 22.
  • the fourth transparent electrode layer 714 may be formed of a resistance change material in which the conductive filament 22 is easily formed by forming because the band gap is smaller than that of the other transparent electrode layers 713 and 715.
  • a transparent electrode layer formed of a resistance change material which is relatively easy to form is included in the transparent electrode, so that the transparent electrode can be formed to a thicker thickness even when the same voltage is applied. Therefore, the physical strength of the transparent electrode and the safety of the device can be enhanced.
  • FIG. 7B is the same as that of FIG. 7A in that a plurality of transparent electrode layers are stacked to form a transparent electrode. However, in the case of FIG. 7B, there is a difference in that foaming is performed for each transparent electrode layer constituting the transparent electrode.
  • the first transparent electrode layer 721, the second transparent electrode layer 722, and the third transparent electrode layer 723 having different band gaps are sequentially formed.
  • the semiconductor layer 10 is stacked and formed.
  • the electrode probe 100 is in contact with the first transparent electrode layer 721 to apply a voltage to the first transparent electrode layer 721. ) Is first formed to form the conductive filaments 22 therein.
  • the second transparent electrode layer 722 is formed on the first transparent electrode layer 721, and the second transparent electrode layer 722 is formed in the same manner as the first transparent electrode layer 721 to form the conductive filament 22 therein.
  • the third transparent electrode layer 723 is formed on the second transparent electrode layer 722 and the transparent electrode 720 is completed by forming.
  • the fourth embodiment shown in (b) of FIG. 7B except that the plurality of transparent electrode layers are all formed of a resistance change material of the same material, the transparent electrode and the structure shown in (a) of FIG. 7B And since the formation method is the same, a detailed description is omitted.
  • the transparent electrode is formed to include a plurality of transparent electrode layers 731 each formed with a conductive filament 22, thereby forming the transparent electrode in a desired thickness.
  • the thickness of the transparent electrode and the safety of the device can be enhanced.
  • FIGS. 8A and 8B illustrate a structure of a transparent electrode and a method of forming a transparent electrode according to a fifth exemplary embodiment of the present invention.
  • the transparent electrode 810 according to the fifth preferred embodiment of the present invention illustrated in FIG. 8A includes a transparent conductive layer 811 formed on the semiconductor layer 10 and a transparent electrode layer formed of a resistance change material on the transparent conductive layer 811. 812).
  • the transparent conductive layer 811 is formed of a material having a higher conductivity due to a smaller band gap than the transparent electrode layer 812.
  • the transparent conductive layer 811 may be formed of materials (eg, ITO, ZnO, etc.) used as a transparent electrode in the conventional transparent electrode technology. Can be.
  • the transparent electrode layer 812 is formed of the above-described resistance change material and conductive filaments 22 are formed therein, and the resistance state thereof is changed to a low resistance state.
  • some regions of the transparent conductive layer 811 are formed to be exposed to the outside.
  • the partial region 813 of the transparent conductive layer 811 exposed to the outside is in contact with the electrode probe 100 and used in the forming process.
  • the transparent electrode layer 812 is formed on the entire surface of the transparent conductive layer 811, and a portion of the transparent electrode layer 812 is etched to etch the transparent conductive layer 811.
  • a transparent conductive layer having a higher conductivity due to a smaller band gap than a transparent electrode layer 812 described later as a very thin thin film on the semiconductor layer 10. 811 is formed by evaporation.
  • the transparent conductive layer 811 may be formed of materials (eg, ITO, ZnO, etc.) used as a transparent electrode in the prior art.
  • the transparent conductive layer 811 is formed too thick, since the light in the ultraviolet region flowing from the semiconductor layer 10 does not pass through the transparent conductive layer 811, it is preferable to form the thinnest layer possible.
  • the transparent conductive layer 811 is formed to a thickness of about 3 nm to 5 nm.
  • a transparent conductive layer 811 in a pattern corresponding to the electrode pad pattern (not shown) formed on the transparent electrode using a photo process, to the transparent conductive layer 811 As a result, the light extraction efficiency may be reduced. That is, since the electrode pad pattern (not shown) formed on the transparent electrode layer 812 does not allow light to pass through, forming a transparent conductive layer in a pattern corresponding thereto may reduce the light extraction efficiency.
  • a transparent electrode layer 812 is formed thereon using a resistance change material. At this time, the transparent electrode layer 812 is formed so that a portion of the transparent conductive layer 811 is exposed to the outside, and the method thereof has been described above and thus will be omitted.
  • a portion of the transparent conductive layer 811 exposed to the outside is in contact with the electrode probe 100 in the forming process of the transparent electrode layer 812 and used in the forming process. That is, one of the pair of electrode probes 100 for performing the forming is in contact with the transparent electrode layer 812, and the other is in direct contact with the exposed area of the transparent conductive layer 811 to apply a voltage.
  • a voltage is applied in this manner, as shown in FIG. 8A, a current path is formed through the transparent electrode layer 812 and the transparent conductive layer 811 formed thereunder to form a current path through only the transparent electrode layer 812.
  • the forming process may be performed at a lower voltage than that of forming.
  • the conductive filament 22 can be formed on the thicker transparent electrode at the same forming voltage as compared with the case where the transparent conductive layer 811 is not provided, thereby providing the strength and The safety of the device can be enhanced.
  • the transparent electrode 820 is a diagram showing a modification of the fifth preferred embodiment of the present invention.
  • the transparent electrode 820 may include a lower transparent electrode layer 821 formed on the semiconductor layer 10, a transparent conductive layer 822 formed on the lower transparent electrode layer 821, An upper transparent electrode layer 823 formed on the transparent conductive layer 822.
  • 8B is a transparent conductive layer 822 and an upper transparent electrode layer (except that the lower transparent electrode layer 821 is further formed under the transparent electrode of the fifth embodiment shown in FIG. 8A).
  • 823 has the same configuration as the transparent conductive layer 811 and the transparent electrode layer 812 of FIG. 8A.
  • the lower transparent electrode layer 821 is formed with a conductive filament 22 formed therein.
  • a resistive change material is deposited on the semiconductor layer 10 to form a lower transparent electrode layer 821, and contacting the electrode probe 100 thereon. Then, a forming voltage is applied to the lower transparent electrode layer 821 to form a conductive filament 22 therein.
  • the process of forming the lower transparent electrode layer 821 is the same as that of the first embodiment described above.
  • a transparent conductive layer 822 is formed by depositing on the lower transparent electrode layer 821, and an upper transparent electrode layer 823 is formed to expose a portion of the transparent conductive layer 822 thereon.
  • the transparent conductive layer 822 is preferably formed to correspond to the electrode pad pattern to be formed on the upper transparent electrode layer 823, and the method of generating the upper transparent electrode layer 823 is as described above with reference to FIG. 8A.
  • the forming electrode is applied by contacting the electrode probe 100 to the upper transparent electrode layer 823 and the transparent conductive layer 822, respectively.
  • Conductive filaments 22 are formed on the transparent electrode layer 823.
  • the forming of the transparent conductive layer 822 and the upper transparent electrode layer 823 capable of reducing the forming voltage on the lower transparent electrode layer 821, which is already formed, is performed to form the modified example of the fifth embodiment.
  • the transparent electrode can be formed thicker than the transparent electrode shown in Fig. 3, and as a result, the strength of the transparent electrode and the safety of the device can be further enhanced.

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Abstract

La présente invention concerne une électrode transparente qui est formée à l'aide d'un matériau transparent à changement de résistance, dont l'état de résistance varie d'un état de haute résistance à un état de faible résistance en fonction d'un champ électrique appliqué ; un procédé de formation est mis en œuvre par application d'une tension à l'électrode transparente de sorte à faire varier l'état de résistance de l'électrode transparente vers un état de faible résistance de sorte que l'électrode transparente présente une conductivité ; par conséquent, il est possible de former une électrode transparente présentant de bonnes caractéristiques ohmiques, une couche semi-conductrice étant formée sur la partie inférieure ou sur la partie supérieure de l'électrode transparente, et qui présente un degré élevé de transmission non seulement vis-à-vis de la lumière dans la plage de la lumière visible, mais également vis-à-vis de la lumière à courte longueur d'onde dans la plage UV. En particulier, selon la présente invention, des nanoparticules, etc., sont comprises à l'intérieur d'une électrode transparente, qui est constituée d'un matériau à changement de résistance, concentrant ainsi le champ électrique, de sorte que la formation puisse être mise en œuvre facilement à une tension inférieure ; lorsque la même tension de formation est appliquée, une électrode transparente plus épaisse est formée, ce qui permet d'améliorer la résistance de l'électrode transparente et la sûreté du dispositif. En outre, selon la présente invention, une pluralité de couches d'électrode transparente, qui sont constituées de matériaux à changement de résistance, sont empilées de sorte à former une électrode transparente, ce qui permet de former une électrode transparente présentant une grande épaisseur et d'améliorer la résistance de l'électrode transparente et la sûreté du dispositif. En particulier, une partie de la pluralité de couches d'électrode transparente est formée à l'aide d'un matériau approprié pour la formation, ce qui permet d'accroître l'épaisseur de l'électrode transparente et de réduire la tension de formation. En outre, lorsqu'une pluralité de couches d'électrode transparente sont empilées de sorte à former une électrode transparente selon la présente invention, la pluralité de couches d'électrode transparente sont empilées de sorte que la différence de l'indice de réfraction par rapport à une couche d'air extérieur diminue vers la partie supérieure, ce qui permet d'empêcher une réflexion totale de la lumière produite par la couche semi-conductrice et d'améliorer l'efficacité d'extraction de lumière. Encore en outre, selon la présente invention, une couche conductrice transparente est formée sur la couche semi-conductrice selon un motif correspondant à un motif d'électrode formé sur l'électrode transparente de sorte que la formation soit facilitée tout en réduisant à un minimum la dégradation de l'efficacité d'extraction de lumière, ce qui permet de former une électrode transparente ayant une grande épaisseur et d'améliorer par conséquent la résistance de l'électrode transparente et la sûreté du dispositif.
PCT/KR2014/008082 2013-09-27 2014-08-29 Électrode transparente et son procédé de fabrication WO2015046766A1 (fr)

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KR20170018718A (ko) 2015-08-10 2017-02-20 삼성전자주식회사 비정질 합금을 이용한 투명 전극 및 그 제조 방법
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US10847681B2 (en) 2018-06-15 2020-11-24 Korea University Research And Business Foundation Method for manufacturing micro light emitting device by minimizing mask processes, and micro light emitting device

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