WO2015040902A1

WO2015040902A1 - Power semiconductor module and power converter using same

Info

Publication number: WO2015040902A1
Application number: PCT/JP2014/065408
Authority: WO
Inventors: 健徳山; 敬介堀内; 欣也中津; 俊也佐藤
Original assignee: 日立オートモティブシステムズ株式会社
Priority date: 2013-09-20
Filing date: 2014-06-11
Publication date: 2015-03-26
Also published as: JP6101609B2; JP2015061454A

Abstract

　The objective of the present invention is to improve the cooling performance and productivity of a power module. A power semiconductor module (300a) according to the present invention is provided with a power semiconductor element (328, 156) for converting direct-current electrical current into alternating-current electrical current, and a case (304) for forming an accommodation space for accommodating the power semiconductor element. The case has a first heat dissipator (354a) and a second heat dissipator (354b) facing the first heat dissipator across the accommodation space. The first heat dissipator and the second heat dissipator have a plurality of first fins (360) and second fins (370 a-f), the second fins having a cross-sectional width larger than the cross-sectional width of the first fins. The second fins are disposed farther toward the outside than a first fin area (363), in which are combined a plurality of first fins disposed toward the outside among the plurality of first fins.

Description

Power semiconductor module and power converter using the same

The present invention relates to a power semiconductor module for converting a direct current into an alternating current and a power conversion device using the same, and more particularly to a power semiconductor module for supplying an alternating current to a drive motor of a hybrid vehicle or an electric vehicle and the use thereof. The present invention relates to a power conversion apparatus.

In recent years, power semiconductor modules and power converters using the power semiconductor modules have been required to be able to output a large current, while miniaturization is also required. If the power converter attempts to output a large current, the heat generated in the power semiconductor element built in the power semiconductor module will increase, and the heat resistance temperature of the power semiconductor element will not increase unless the heat capacity of the power semiconductor module or power converter is increased. This hinders downsizing. Therefore, a double-sided cooling type power semiconductor module that improves the cooling efficiency by cooling the power semiconductor element from both sides and a double-sided cooling type power converter using the same have been developed.

The double-sided cooling type power semiconductor module sandwiches both main surfaces of the power semiconductor element with plate-shaped conductors, and the surface of the plate-shaped conductor opposite to the surface facing the main surface of the power semiconductor element is thermally connected to the cooling medium. Cooled down.

Patent Document 1 discloses a power semiconductor module in which both main surfaces of a power semiconductor element are sandwiched between plate-like lead frames to form a circuit body, and the circuit body is housed in a case. This case forms a pin fin for cooling the circuit body.

In order to increase the current and size of the power conversion device and improve the reliability of the power semiconductor module, it is required to further improve the heat transfer coefficient of this case.

Therefore, it is conceivable to increase the number of fins by increasing the fin spacing by reducing the fin spacing and dimensions.

However, since the strength of the fins is reduced, the fins may be deformed or broken during transportation of the power semiconductor module or assembly of the power conversion device to a cooling water channel or the like, thereby reducing the productivity of the power semiconductor module. is there.

JP 2010-110143 A

An object of the present invention is to achieve both improvement in cooling performance and productivity in a power module.

A power semiconductor module according to the present invention includes a power semiconductor element that converts a direct current into an alternating current, and a case that forms a storage space for the power semiconductor element. The case includes a first heat radiator, and the storage. A second radiator that opposes the first radiator with a space interposed therebetween, wherein the first radiator and the second radiator include a plurality of first fins and a width of a cross section of the first fin. A second fin that forms a larger cross-sectional width than the first fin, and the second fin connects a plurality of first fins arranged outside of the plurality of first fins. It arrange | positions outside a fin area | region.

According to the present invention, it is possible to improve both the cooling performance and productivity of the power module.

It is a figure which shows the control block of a hybrid type motor vehicle. 3 is a circuit configuration diagram of an inverter circuit unit 140. FIG. 1 is an external perspective view of a power conversion device 200. FIG. 2 is an exploded perspective view of a power conversion device 200. FIG. 4 is an exploded perspective view of a housing 400. FIG. It is sectional drawing of the housing | casing 400 seen from the arrow direction of plane AA of FIG. It is an external appearance perspective view of the power semiconductor module 300a. It is a disassembled perspective view of the power semiconductor module 300a. 3 is an exploded perspective view of a power circuit body 380. FIG. It is the external appearance perspective view which looked at the housing | casing 400 which formed the flow-path formation body 410 integrally from the upper surface. It is the external appearance perspective view which looked at the housing | casing 400 from the lower surface. 6 is a cross-sectional view showing a process of assembling the power semiconductor modules 300a to 300c to the flow path forming body 400. FIG. 5 is a cross-sectional view showing a process of assembling the bus bar module 700 to the flow path forming body 410 as seen from the direction of the arrow of the plane B of FIG. It is an enlarged view of the 1st heat radiator 354a of the surface side in which the fin was formed. It is the permeation | transmission figure which permeate | transmitted the 1st thermal radiation body 354a and showed the positional relationship of the fin 350 and a power semiconductor element. It is the enlarged view to which the area | region C of FIG. 14 was expanded. FIG. 6 is a front view of the power semiconductor module 300a and the adjustment member 407 in a state where the power semiconductor module 300a is incorporated in the flow path forming body 410. It is an enlarged view of the area | region D of FIG. It is an enlarged view of the 1st heat radiator 354a by the side of the surface in which the fin concerning other embodiments was formed. It is the enlarged view to which the area | region E of FIG. 19 was expanded. It is a front view of the power semiconductor module 300a and the adjustment member 472a in the state in which the power semiconductor module 300a which concerns on other embodiment was integrated in the flow-path formation body 410. FIG. It is an enlarged view of the area | region F of FIG. It is a front view of the power semiconductor module 300a and the adjustment member 407 in the state in which the power semiconductor module 300a which concerns on other embodiment was integrated in the flow-path formation body 410. It is an enlarged view of the area | region G of FIG. It is a whole perspective view which shows the state which has arrange | positioned the power converter device 200 in any one of Example 1 thru | or Example 3 to transmission TM.

The power converter according to the present embodiment will be described in detail below with reference to the drawings. The power conversion device according to the present embodiment can be applied to a hybrid vehicle or a pure electric vehicle. As a representative example, FIG. 1 and FIG. 2 show a control configuration and a circuit configuration when applied to a hybrid vehicle. It explains using.

FIG. 1 is a diagram showing a control block of a hybrid vehicle, and an internal combustion engine EGN and a motor generator MG are power sources that generate a running torque of the vehicle. Motor generator MG not only generates rotational torque, but also has a function of converting mechanical energy (rotational force) applied to motor generator MG from the outside into electric power. The motor generator MG is, for example, a synchronous motor / generator or an induction motor / generator, and operates as a motor or a generator depending on the operation method as described above.

The output side of the internal combustion engine EGN is transmitted to the motor generator MG via the power distribution mechanism TSM, and the rotation torque from the power distribution mechanism TSM or the rotation torque generated by the motor generator MG is transmitted to the wheels via the transmission TM and the differential gear DEF. Is transmitted to.

On the other hand, during regenerative braking operation, rotational torque is transmitted from the wheels to motor generator MG, and AC power is generated based on the transmitted rotational torque. The generated AC power is converted into DC power by the power conversion device 200 as described later, and the high-voltage battery 136 is charged. The charged power is used again as travel energy.

Next, the power conversion device 200 will be described. The inverter circuit unit 140 is electrically connected to the battery 136 via a DC connector 138, and power is exchanged between the battery 136 and the inverter circuit unit 140.

When motor generator MG is operated as an electric motor, inverter circuit section 140 generates AC power based on DC power supplied from battery 136 via DC connector 138 and supplies the motor generator MG via AC connector 188. To do. The configuration including motor generator MG and inverter circuit unit 140 operates as an electric / power generation unit.

The electric / power generation unit may be operated as an electric motor or a generator depending on the operating state, or may be operated by using them properly. In the present embodiment, the vehicle can be driven only by the power of the motor generator MG by operating the electric / power generation unit as an electric unit by the electric power of the battery 136. Furthermore, in the present embodiment, the battery 136 can be charged by operating the electric / power generation unit as the power generation unit by the power of the internal combustion engine EGN or the power from the wheels to generate power.

The power conversion device 200 includes a capacitor module 500 for smoothing DC power supplied to the inverter circuit unit 140.

The power conversion device 200 includes a communication connector 21 for receiving a command from a host control device or transmitting data representing a state to the host control device. A control circuit unit 172 calculates a control amount of the motor generator MG based on a command input from the connector 21.

Further, whether to operate as an electric motor or a generator is calculated, a control pulse is generated based on the calculation result, and the control pulse is supplied to the driver circuit 174. Based on this control pulse, the driver circuit 174 generates a drive pulse for controlling the inverter circuit unit 140.

Next, the circuit configuration of the inverter circuit unit 140 will be described with reference to FIG. 2, but an insulated gate bipolar transistor is used as a semiconductor element, which is hereinafter abbreviated as IGBT.

The inverter circuit unit 140 outputs the power semiconductor modules 300a to 300c of the upper and lower arms composed of the IGBT 328 and the diode 156 that operate as the upper arm and the IGBT 330 and the diode 166 that operate as the lower arm, and outputs the U phase of the AC power to be output. , V phase and W phase.

These three phases correspond to the three-phase windings of the armature winding of the motor generator MG in this embodiment. The power semiconductor modules 300a to 300c of the upper and lower arms of each of the three phases output an alternating current from an intermediate electrode 169 that is a midpoint portion of each IGBT 328 and each IGBT 330 of the power semiconductor modules 300a to 300c. Through AC terminal 159, it is connected to an AC bus bar which is an AC power line to motor generator MG.

The collector electrode 153 of the IGBT 328 in the upper arm is connected to the capacitor terminal 502 on the positive electrode side of the capacitor module 500 via the positive electrode terminal 157, and the emitter electrode of the IGBT 330 in the lower arm is connected to the capacitor terminal on the negative electrode side of the capacitor module 500 via the negative electrode terminal 158. Each is electrically connected to 502.

As described above, the control circuit unit 172 receives a control command from the host control device via the connector 21, and based on this, the upper arm or the lower arm of the power semiconductor modules 300a to 300c of each phase constituting the inverter circuit unit 140. A control pulse that is a control signal for controlling the IGBT 328 and the IGBT 330 constituting the arm is generated and supplied to the driver circuit 174.

The driver circuit 174 supplies a drive pulse for controlling the IGBT 328 and IGBT 330 constituting the upper arm or lower arm of each phase to the IGBT 328 and IGBT 330 of each phase based on the control pulse.

The IGBT 328 and the IGBT 330 perform conduction or cutoff operation based on the drive pulse from the driver circuit 174, convert the DC power supplied from the battery 136 into three-phase AC power, and the converted power is supplied to the motor generator MG1. The

The IGBT 328 includes a collector electrode 153, a signal emitter electrode 155, and a gate electrode 154. The IGBT 330 includes a collector electrode 163, a signal emitter electrode 165, and a gate electrode 164.

A diode 156 is electrically connected between the collector electrode 153 and the emitter electrode. A diode 166 is electrically connected between the collector electrode 163 and the emitter electrode.

As the switching power semiconductor element, a metal oxide semiconductor field effect transistor (hereinafter abbreviated as MOSFET) may be used. In this case, the diode 156 and the diode 166 are not required. As a switching power semiconductor element, IGBT is suitable when the DC voltage is relatively high, and MOSFET is suitable when the DC voltage is relatively low. *

The capacitor module 500 includes a plurality of positive electrode side capacitor terminals 502, a plurality of negative electrode side capacitor terminals 502, a positive electrode side power supply terminal 509, and a negative electrode side power supply terminal 508. High voltage DC power from the battery 136 is supplied to the positive power supply terminal 509 and the negative power supply terminal 508 via the DC connector 138, and the plurality of positive capacitor terminals 502 and the plurality of negative capacitors on the capacitor module 500 are provided. The voltage is supplied from the terminal 502 to the inverter circuit unit 140.

On the other hand, DC power converted from AC power by the inverter circuit unit 140 is supplied to the capacitor module 500 from the positive capacitor terminal 502 and the negative capacitor terminal 502, and is connected to the DC connector 138 from the positive power terminal 509 and the negative power terminal 508. Is supplied to the battery 136 and stored in the battery 136.

The control circuit unit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for performing arithmetic processing on the switching timing of the IGBT 328 and the IGBT 330. As input information to the microcomputer, there are a target torque value required for the motor generator MG, a current value supplied from the upper and lower arm power semiconductor module 150 to the motor generator MG, and a magnetic pole position of the rotor of the motor generator MG1.

The target torque value is based on a command signal output from a host controller (not shown), and the current value is detected based on a detection signal from a current sensor. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) such as a resolver provided in the motor generator MG.

FIG. 3 is an external perspective view of the power conversion device 200.

The housing 400 has an opening formed on the upper surface thereof, and the opening is closed by the lid 900. The DC connector 138 is a terminal that is electrically connected to the battery 136. AC connector 188 is a terminal that is electrically connected to motor generator 192. The DC connector 138 and the AC connector 188 are provided on the lid 900. The casing 400 is fixed to the vehicle body so that the lid 900 faces the opening side for performing the wiring work of the automobile.

This facilitates the wiring and connection of both the DC connector 138 and the AC connector 188.

FIG. 4 is an exploded perspective view of the power conversion device 200.

The housing 400 accommodates the flow path forming body 410. The flow path forming body 410 forms a flow path for cooling power semiconductor modules 300a to 300c described later, but also forms a flow path for cooling a capacitor element 500 described later in this embodiment. The flow path forming body 410 has an opening at the bottom, and the opening 401 is closed by the lid 401. The channel inlet portion 402 a and the channel outlet portion 402 b are fixed to the lid 401.

The terminals of the power semiconductor modules 300 a to 300 c and the terminals of the capacitor element 500 protrude from the upper surface side of the flow path forming body 410. The bus bar module 700 includes a DC bus bar (not shown) connected to the DC terminals of the power semiconductor modules 300a to 300c and the terminals of the capacitor element 500, and an AC bus bar (not shown) connected to the AC terminals of the power semiconductor modules 300a to 300c. ) And an insulating resin portion for covering and integrating the DC bus bar and the AC bus bar.

The base unit 800 forms a storage space for storing the bus bar module 700 and is fixed to the housing 400. The base portion 800 forms a first through hole 801 for passing through

signal terminals

327U and 327L of power semiconductor modules 300a to 300c described later.

The control circuit board 175 is disposed on the surface opposite to the side where the storage space of the base portion 800 is formed, and is connected to the

signal terminals

327U and 327L.

The base portion 800 is made of a conductive member, for example, a metal material, shields noise emitted from the power semiconductor modules 300a to 300c, and protects the control circuit board 175 from noise. In addition, the base portion 800 forms a recess 802 for securing an insulation distance from the terminal of the capacitor element 500.

The power conversion device 200 according to the present embodiment requires cooling according to the power semiconductor modules 300a to 300c and the first layer in which the power semiconductor modules 300a to 300c and the capacitor elements 500 that require cooling while flowing large power are disposed. In addition, a second hierarchy in which the bus bar module 700 that flows high power is arranged and a third hierarchy in which the control circuit board 175 that handles the low power of the control system is arranged. Note that a base unit 800 is disposed between the second layer and the third layer.

FIG. 5 is an exploded perspective view of the housing 400. 6 is a cross-sectional view of the housing 400 as seen from the direction of the arrow on the plane AA in FIG.

In the present embodiment, the flow path forming body 410 is integrally formed with the housing 400. Thereby, the housing 400 is cooled by the flow path forming body 410, and components fixed to the housing 400, for example, the base portion 800 and the lid 401 can be cooled, and the entire power conversion device 200 can be efficiently cooled. Can do.

The flow path forming body 410 includes a first flow path space 411 in which the power semiconductor modules 300a to 300c are disposed, a storage space 490 that stores the capacitor element 500, and a second flow path space 412 that faces the storage space 490. Form.

The second channel space 412 connects the channel inlet portion 402a and the first channel space 411. Moreover, the flow path forming body 410 forms an opening 413 connected to the first flow path space 411 on the bottom surface. The opening 413 is closed by the lid 401, so that the flow path forming body 410 and the lid 401 form a flow path for flowing the cooling refrigerant.

Furthermore, the flow path forming body 410 forms a plurality of through holes 415 connected to the first flow path space 411 in the upper surface portion. The terminals of the power semiconductor modules 300 a to 300 c are extended to the outside of the flow path forming body 410 through the through holes 415.

Further, the flow path forming body 410 forms an opening 414 connected to the storage space 490 on the upper surface.

The capacitor terminal 502 is extended to the outside of the flow path forming body 410 through the opening 414. The sealing resin 501 fills the storage space 490 and seals the capacitor terminal 502.

The cooling refrigerant flow 499 flows from the flow path inlet portion 402a through the second flow path space 412 and further through the first flow path space 411 to the flow path outlet portion 402b. The heat transferred from the capacitor terminal 502 is transferred to the cooling refrigerant flowing in the second flow path space 412 via the sealing resin 501 and the flow path forming body 410. The second flow path space 412 may be provided in the flow path forming body 410 that forms not only the bottom portion of the storage space 490 but also the side portions. FIG. 7 is an external perspective view of the power semiconductor module 300a. Since the power semiconductor modules 300a to 300c have the same configuration, the power semiconductor module 300a will be described as a representative.

The power semiconductor module 300a includes a power circuit body 380, which will be described later, a case 304 that houses the power circuit body 380, and an insulating mold terminal portion 600 that insulates the terminals.

The frame body 305 forms a side surface and a bottom surface of the case 304. The first side surface 351 a forms the widest surface orthogonal to the side surface and the bottom surface of the case 304. The second side surface 351b is formed on the opposite side of the first side surface 351a across the power circuit body 380, and forms the widest surface orthogonal to the side surface and the bottom surface of the case 304, similarly to the first side surface 351a.

Since the second side surface 351b has the same configuration and function as the first side surface 351a, the first side surface 351a will be described as a representative.

The fin 350 is formed on the first side surface 351a and is a cylindrical pin fin in the present embodiment. The fin forming surface 352 is a surface on which the fins 350 are intensively formed on the first side surface 351a.

The flange 308 is formed so as to surround the insertion hole 306 (see FIG. 8) in order to pass the terminal of the power semiconductor module 300a. The positioning portion 311 performs positioning when assembling with the flow path forming body 410 and is provided on the upper surface side of the flange 308. The O-ring groove 312 is formed on the side surface side of the flange 308, and the power semiconductor module 300a and the flow path forming body 410 are sealed on the side surface side of the power semiconductor module 300a. That is, the O-ring groove 312 is formed so as to surround the outer periphery of the insertion port 306.

The terminals of the power semiconductor module 300a include a positive terminal 315D, a negative terminal 319D, an AC terminal 320D, a signal terminal 327L, and a signal terminal 327U.

The auxiliary mold body 601 is formed with a plurality of through holes for penetrating the positive terminal 315D, the AC terminal 320, the signal connection terminal 327L, and the signal connection terminal 327U, and electrically insulates the terminals from each other. The groove 602 is formed in the auxiliary mold body 601 in order to fix the insulating material disposed between the terminals. Thereby, the insulation distance between terminals can be lengthened.

FIG. 8 is an exploded perspective view of the power semiconductor module 300a.

The power circuit body 380 includes an insulating sealing material 302 for sealing a conductor member such as a conductor plate 318 (see FIG. 9) and a power semiconductor element. Further, the heat radiation surface 321A of the conductor plate 318 and the heat radiation surface 321B of the conductor plate 319 are exposed from the insulating sealing material 302 and radiate heat transmitted from the power semiconductor element.

The heat radiation surface 321 A and the heat radiation surface 321 B are formed so as to overlap the fin formation surface 352 when viewed from the direction perpendicular to the fin formation surface 352. The insulating

materials

333a and 333b are disposed between the power circuit body 380 and the case 304, and insulate the power circuit body 380 and the case 304 from each other. The case 304 has a fully closed structure except for the insertion port 306 from which the terminal protrudes.

In addition, although the 1st heat radiating body 354a and the 2nd heat radiating body 354b may be integrally formed with the frame 305, in this embodiment, the case 304 is a 1st heat radiating body which forms a part of 1st side surface 351a. 354a and a second heat radiating body 354b that forms a part of the second side surface 351b are formed separately from the frame body 305, and the first heat radiating body 354a and the second heat radiating body 354b are attached to the frame 305 by FSW or They are connected by a highly waterproof joining method such as welding.

When the frame body 305 is joined to the first heat radiating body 354a and the second heat radiating body 354b by FSW or the like, it is necessary to provide joint regions such as FSW and welding on the first side surface 351a and the second side surface 351b.

The case 304 is formed of a member having electrical conductivity, for example, a composite material such as Cu, Cu alloy, Cu—C, or Cu—CuO, or a composite material such as Al, Al alloy, AlSiC, or Al—C.

The insulating sealing material 302 can be made of, for example, a resin based on a novolak, polyfunctional, or biphenyl epoxy resin, and contains ceramics such as SiO2, Al2O3, AlN, BN, gel, rubber, or the like. The thermal expansion coefficient is made closer to the

conductor portions

315, 320, 318, and 319. Thereby, the difference in thermal expansion coefficient between the members can be reduced, and the thermal stress generated as the temperature rises in the use environment is greatly reduced, so that the life of the power semiconductor module can be extended. Further, a high heat-resistant thermoplastic resin such as PPS (polyphenyl sulfide) or PBT (polybutylene terephthalate) is suitable for the molding material of the auxiliary mold body 600.

FIG. 9 is an exploded perspective view of the power circuit body 380.
The IGBT 328 and the diode 156 constitute an upper arm circuit of the inverter circuit 140. The conductor plate 315 is metal-connected to the collector electrode of the IGBT 328 and the anode electrode of the diode 156 by a solder material or the like.

The conductor plate 318 is disposed on the opposite side of the conductor plate 315 with the IGBT 328 and the diode 156 interposed therebetween, and is electrically connected to the emitter electrode of the IGBT 328 and the cathode electrode of the diode 156 by a solder material or the like. The IGBT 330 and the diode 166 constitute a lower arm circuit of the inverter circuit 140.

The conductor plate 320 is metal-connected to the collector electrode of the IGBT 330 and the anode electrode of the diode 166 by a solder material or the like. The conductor plate 319 is disposed on the opposite side of the conductor plate 312 with the IGBT 330 and the diode 136 in between, and is metal-connected to the emitter electrode of the IGBT 330 and the cathode electrode of the diode 166 by a solder material or the like.

As the metal bonding agent used for the metal connection, for example, a Sn alloy-based soft solder material (solder), a hard solder material such as an Al alloy / Cu alloy, or a metal sintered material using metal nanoparticles / micro particles is used. be able to.

The intermediate electrode 329A is disposed on the side of the conductor plate 318 close to the conductor plate 319. The intermediate electrode 329B is disposed on the side of the conductor plate 320 close to the conductor plate 315, and extends toward the conductor plate 315 so as to face the intermediate electrode 329A. Further, the intermediate electrode 329B is metal-connected to the intermediate electrode 329A by a solder material or the like, and connects the upper arm circuit and the lower arm circuit.

Note that the conductor plate 318 and the conductor plate 319 are arranged so as to be arranged on a virtual plane parallel to the emitter electrode of the IGBT 328. Similarly, the conductor plate 315 and the conductor plate 320 are arranged so as to be arranged on a virtual plane parallel to the collector electrode of the IGBT 328.

FIG. 10 is an external perspective view of the casing 400 integrally formed with the flow path forming body 410 as viewed from above. FIG. 11 is an external perspective view of the housing 400 as viewed from the lower surface.

The flat surface 404 is formed on the upper surface of the flow path forming body 400, and the bus bar module 700 is disposed on the flat surface 404. The through hole 415 shown in FIG. 5 is formed in the flat surface 404.

The recess 406 is formed on the surface of the flow path forming body 400 in which the first flow path space 411 is formed, in which the through hole 415 is formed. The concave portion 406 is formed in the flow path forming body 400 such that the through hole 415 is disposed on the bottom surface portion of the concave portion 406.
FIG. 12 is a cross-sectional view illustrating a process of assembling the power semiconductor modules 300a to 300c to the flow path forming body 400. FIG. 13 is a cross-sectional view showing a process of assembling the bus bar module 700 to the flow path forming body 410 as seen from the direction of the arrow on the plane B in FIG.

The power semiconductor modules 300a to 300c are accommodated in the first flow path space 411 from the bottom surface side of the flow path forming body 410. The positioning part 311 formed in the case 304 of the power semiconductor module 300a is assembled to the bottom part of the recess 406. On the other hand, the O-ring groove 312 formed in the case 304 is disposed at a position facing the side surface of the recess 406.

The auxiliary mold body 601 is disposed through the through-hole 415, and one surface of the auxiliary mold body 601 is disposed so as to be flush with the flat surface 404 of the flow path forming body 410. The terminals of the power semiconductor modules 300a to 300c pass through the through holes 705 of the bus bar module 700 and are connected to the terminals 701 on the bus bar module 700 side.

The adjusting member 407 is a member for adjusting the flow of the cooling medium so that the cooling medium flows through the fins 350. That is, the adjustment member 407 is a member for preventing the coolant from bypassing other than the fins 350. The reason why the adjustment member 407 is provided is that the case 304 needs a joining region for joining the first heat radiator 354a to the frame body 305 as described with reference to FIG.

FIG. 14 is an enlarged view of the first heat radiating body 354a on the surface side where the fins are formed.

The fin 350 includes a first fin 360 and second fins 370a to 370f having a thickness larger than that of the first fin 360. Here, the thickness of the fin is the width of the fin in the vertical section in the protruding direction of the fin, and in the case of a cylindrical pin fin, it is the diameter of the circle.

The second fins 370a to 370f have a larger diameter and higher bending rigidity than the first fin 360. As the first fin 360, for example, a pin fin having a diameter of about 0.9 mm is used.

The interval between the first fins 360 is smaller than the interval between the first fins 360 and the second fins 370a. Thereby, the heat transfer rate of the formation region of the first fin 360 can be improved.

FIG. 15 is a transmission diagram showing the positional relationship between the fin 350 and the power semiconductor element through the first heat radiator 354a.

The first fin projecting portion 360S is an oblique shadow of the first fin 360 when projected from the vertical direction with respect to the emitter electrode surface of the IGBT 328 or the fin forming surface of the first heat radiator 354a. Similarly, the second fin projection unit 370 S is an oblique projection of the second fin 370.

The first fin 360 is formed such that the first fin projection 360S overlaps the

IGBTs

328 and 330 and the

diodes

156 and 166. Thereby, power semiconductor elements, such as IGBT328 which is heat dissipation object, are efficiently cooled by the 1st fin 360 with a high heat transfer rate.

FIG. 16 is an enlarged view of a region C in FIG.
The outer peripheral edge 363 is a portion that becomes an edge when surrounding an area where the plurality of first fins 360 are formed. The second fins 370 a to 370 f are disposed outside the outer peripheral edge 363.

That is, as described with reference to FIG. 15, when projected from the direction perpendicular to the emitter electrode surface of the IGBT 328 or the fin forming surface of the first heat radiator 354 a, the second fins 370 a to 370 f are the second fin projecting portions 370 S. Are arranged so as to overlap the outer peripheral edge of the first fin projecting portion 360S or to be outside the outer peripheral edge of the first fin projecting portion 360S. In other words, the second fins 370a to 370f are arranged outside the first fin region connecting the plurality of first fins 360 arranged outside the plurality of first fins 360.

The power semiconductor modules 300a to 300c of this embodiment use a case 304 in which fins 350 are formed on two wide surfaces. Further, the case 304 uses the first fin 360 having a very small diameter in order to improve the heat transfer coefficient.

From these conditions, it is necessary to sufficiently protect the first fin 360 from deformation and cracking when the power semiconductor modules 300a to 300c of the present embodiment are transported or assembled during manufacture. For example, the power semiconductor modules 300a to 300c are placed on a workbench or the like before being incorporated into the flow path forming body 410. At this time, the power semiconductor modules 300a to 300c are in a state where the frame body 305 is in contact with the workbench. From this point, when the power semiconductor modules 300a to 300c are taken up for incorporation, it is also assumed that the power semiconductor modules 300a to 300c fall on the work table or the first fin 360 contacts the work table. In particular, in the present embodiment, since the fins 350 are formed on two wide surfaces of the case 304, the probability is high.

Therefore, the second fins 370 are disposed outside the outer peripheral edge 363 of the formation region of the first fin 360 on both surfaces of the case 304, thereby protecting the first fin 360 on both surfaces of the case 304 from deformation and cracking. Will be able to. In particular, the first fin 360 facing the power semiconductor element can be protected from deformation and cracking.

Further, as shown in FIG. 16, the second fin 370 is disposed so as to have a protruding portion 355 protruding from the extension line 364 of the outer peripheral edge 363. The protruding portion 355 is provided in a direction along the insertion direction D when the power semiconductor modules 300a to 300c are inserted into the flow path forming body 410.

Thereby, when the power semiconductor modules 300a to 300c are incorporated into the flow path forming body 410, it is possible to prevent the first fin 360 from being deformed by the work jig or the operator's hand.

FIG. 17 is a front view of the power semiconductor module 300a and the adjustment member 407 in a state where the power semiconductor module 300a is incorporated in the flow path forming body 410. 18 is an enlarged view of a region D in FIG.

17, the adjustment member 407 is formed so that the gap between the flange 308 and the fin 350 is as small as possible in order to increase the effect for preventing the bypass flow.

Specifically, as shown in FIG. 18, one surface of the adjustment member 407 contacts the flange 308, and the other surface of the adjustment member 407 contacts the fin 350. Therefore, the fin 350 receives stress due to the elastic force 408 of the adjustment member 407.

Therefore, in the present embodiment, the second fins 370a to 370f having higher rigidity than the first fin 360 are configured to receive the stress from the adjusting member 407.

That is, as described with reference to FIG. 15, when projected from the direction perpendicular to the emitter electrode surface of the IGBT 328 or the fin forming surface of the first heat radiator 354 a, the second fins 370 a to 370 f are the second fin projecting portions 370 S. Are arranged so as to overlap the outer peripheral edge of the first fin projecting portion 360S or to be outside the outer peripheral edge of the first fin projecting portion 360S. Thereby, the deformation of the first fin 360 can be prevented.

In particular, when the flow rate of the cooling medium is small, the necessity of assembling the adjusting member 407 without gaps in order to ensure the heat transfer coefficient of the fin 350 increases, and the dimension of the adjusting member 407 is set between the flange 308 and the fin 350. The adjustment member 407 is made of an elastic member while being larger than the dimension. On the other hand, since the first fin 360 attempts to improve the heat transfer coefficient by reducing the diameter and the interval between the first fins 360, the bending rigidity of the first fin 360 is reduced. Therefore, since the elastic force 408 easily deforms the first fin 360, the effect of the present embodiment is remarkably exhibited.

As shown in FIG. 8, the height of the flange 308 is formed larger than the height of the fin 350. 17, the second fin 370a, the second fin 370b, and the second fin 370e are disposed farther than the first fin 360 with respect to the flange 308.

Thus, the first fin 360 near the flange 308 is protected by the flange 308, and the first fin 360 near the second fin 370a or the like is protected by the second fin 370a or the like. Therefore, the number of the second fins 370a can be reduced while maintaining the productivity of the power semiconductor module and the power conversion device.

Also, as shown in FIG. 17, the first fin 360 and the second fins 370a to 370f are arranged so that the fin region connecting the first fin 360 and the second fin 370 has a substantially rectangular shape. Of the plurality of second fins 370a to 370f, four second fins 370a, second fins 370b, second fins 370c, and second fins 370d form substantially rectangular four corners.

Thereby, the first fin 360 can be protected by the small number of second fins 370a and the like at the four corners where the frequency of impact is high in the fin region.

As shown in FIG. 17, the second fins 370e different from the second fins 370a to 370d arranged at the four corners are two adjacent fins of the second fins 370a to 370d arranged at the four corners. The second fins 370a and the second fins 370b are arranged at substantially midpoint positions.

As a result, even when the line segment connecting the second fins 370a and the second fins 370b becomes long and the possibility that the frequency of impact increases on this line segment is high, the small number of second fins 370e. For example, the first fin 360 can be protected.

FIG. 19 is an enlarged view of the first heat radiator 354a on the surface side where the fins according to another embodiment are formed. FIG. 20 is an enlarged view in which the region E in FIG. 19 is enlarged. FIG. 21 is a front view of the power semiconductor module 300a and the adjustment member 472a in a state in which the power semiconductor module 300a according to another embodiment is incorporated in the flow path forming body 410. FIG. 22 is an enlarged view of a region F in FIG.
The configurations denoted by the same drawing numbers as in the first embodiment have the same functions as in the first embodiment. In the present embodiment, a description will be given focusing on the differences from the first embodiment.
The first heat dissipating body 392a according to this embodiment is different from the first embodiment in the positions of the second fins 370a to 370f. Specifically, as shown in FIG. 20, the second fins 370 a to 370 f are arranged close to the first fin 360 so as not to overlap the extension line 364 of the outer peripheral edge 363. Even with such an arrangement, a large number of first fins 360 other than the first fins 360 arranged in the vicinity of the outer peripheral edge 363 can be protected from an impact or the like. Although not shown, the second radiator 392b has the same configuration as the first radiator 392a.

However, if the first fin 360 disposed in the vicinity of the outer peripheral edge 363 is repeatedly pressed by the adjustment member 470 in the first flow path space 411, many first fins 360 are deformed, and the first heat radiator The cooling performance of 392a may be affected.

Therefore, the adjustment member 472 of the present embodiment forms a protruding portion 473 that protrudes toward the second fins 370a to 370f. The protrusion 473 comes into contact with the second fin 370 preferentially in the adjustment member 472. That is, the adjustment member 472 excluding the protruding portion 473 is unlikely to contact the first fin 360, and the first fin 360 フィン can be prevented from being deformed.

FIG. 23 is a front view of the power semiconductor module 300a and the adjustment member 407 in a state in which the power semiconductor module 300a according to another embodiment is incorporated in the flow path forming body 410. FIG. 24 is an enlarged view of a region G in FIG.
The configurations denoted by the same drawing numbers as in the first embodiment have the same functions as in the first embodiment. In the present embodiment, a description will be given focusing on the differences from the first embodiment.

The first radiator 393a according to the present embodiment is different from the first embodiment in the number and position of the second fins. Specifically, as shown in FIG. 23, a plurality of second fins 370 are provided. The plurality of second fins 370 are arranged in a line along the side portion of the adjustment member 407. That is, each of the plurality of first fins 360 is disposed at a position facing the adjustment member 407 with any one of the plurality of second fins 370 interposed therebetween. Thereby, the deformation of the first fin 360 can be prevented.

FIG. 25 is an overall perspective view showing a state where the power conversion device 200 according to any one of the first to third embodiments is arranged in the transmission TM.

When the power conversion device 200 is disposed in the transmission TM, the cooling refrigerant flowing in the power conversion device 200 may receive heat from the transmission TM and increase in temperature. Therefore, like the power conversion device 200 of any of the first to third embodiments described above, the cooling refrigerant uses the adjustment member 407 or the adjustment member 472 to preferentially cool the power semiconductor element. However, it leads to the improvement of the cooling performance of the power converter 200. By using the second fin 370a or the like according to any of the first to third embodiments, it is possible to maintain the cooling performance when the adjustment member 407 or the adjustment member 472 is used.

DESCRIPTION OF SYMBOLS 21 ... Connector, 136 ... Battery, 138 ... DC connector, 140 ... Inverter circuit part, 153 ... Collector electrode, 154 ... Gate electrode, 155 ... Signal emitter electrode, 156 ... Diode, 157 ... Positive electrode terminal, 158 ... Negative electrode terminal, 163 ... Collector electrode, 164 ... Gate electrode, 165 ... Emitter electrode, 166 ... Diode, 169 ... Intermediate electrode, 172 ... Control circuit section, 174 ... Driver circuit, 175 ... Control circuit board, 188 ... AC connector, 200 ... Power conversion 300a ... power semiconductor module, 300c ... power semiconductor module, 302 ... insulating semiconductor, 304 ... case, 305 ... frame, 306 ... insertion hole, 308 ... flange, 311 ... positioning part, 312 ... O-ring groove, 315 ... conductor plate, 315D Positive terminal, 318 ... Conductor plate, 319 ... Conductor plate, 320 ... Conductor plate, 319D ... Negative electrode side terminal, 320D ... AC terminal, 321A ... Heat radiation surface, 321B ... Heat radiation surface, 327L ... Signal terminal, 327U ... Signal terminal, 328 ... IGBT, 329A ... intermediate electrode, 329B ... intermediate electrode, 330 ... IGBT, 333a and 333b ... insulating material, 350 ... fin, 351a ... first side, 351b ... second side, 352 ... fin forming surface, 354a ... first DESCRIPTION OF SYMBOLS 1 Heat radiator, 354b ... 2nd heat radiator, 355 ... Projection part, 360 ... 1st fin, 360S ... 1st fin projection part, 363 ... Outer periphery, 364 ... Extension line, 370 ... 2nd fin, 370a thru | or 370f ... 2nd fin, 370S ... 2nd fin projection part, 380 ... Power circuit body, 392a ... 1st heat radiator, 392b ... 2nd heat radiator, 393a ... 1st DESCRIPTION OF SYMBOLS 1 heat radiator, 393b ... 2nd heat radiator, 400 ... housing | casing, 401 ... cover, 402a ... channel inlet part, 402b ... channel outlet part, 404 ... flat surface, 406 ... recessed part, 407 ... adjustment member, 408 ... Elastic force, 410: channel forming body, 411: first channel space, 412: second channel space, 413: opening, 414: opening, 415: through hole, 472 ... adjusting member, 473 ... projecting portion 490 ... Storage space, 499 ... Flow of cooling refrigerant, 500 ... Capacitor module, 501 ... Sealing resin, 502 ... Capacitor terminal, 508 ... Negative power supply terminal, 509 ... Positive power supply terminal, 600 ... Insulation mold terminal, 601 ... Auxiliary mold body, 602 ... Groove, 700 ... Bus bar module, 701 ... Terminal, 705 ... Through hole, 800 ... Base part, 801 ... First through hole, 802 ... Recess, 900 ... Lid, EGN Internal combustion engine, MG ... motor-generator, TM ... transmission, TSM ... power distribution mechanism

Claims

A power semiconductor element that converts direct current into alternating current;
A case for forming a storage space for storing the power semiconductor element,
The case includes a first radiator and a second radiator that faces the first radiator with the storage space interposed therebetween,
The first heat radiator and the second heat radiator each have a plurality of first fins and second fins having a cross-sectional width larger than the cross-sectional width of the first fins.
The said 2nd fin is a power semiconductor module arrange | positioned outside the 1st fin area | region which tied the some 1st fin arrange | positioned outside among the said some 1st fin.
A power semiconductor module according to claim 1,
When projected from the direction perpendicular to the fin forming surface on which the first fin is formed in the first radiator,
The first fin is arranged such that a projection part of the first fin overlaps with a projection part of the power semiconductor element,
The second fin is a power semiconductor module arranged so that a projection part of the second fin does not overlap with a projection part of the power semiconductor element.
A power semiconductor module according to claim 1 or 2,
The case has a flange formed larger than the height of the first fin and the second fin,
The second fin is a power semiconductor module arranged farther than the first fin with respect to the flange.
The power semiconductor module according to any one of claims 1 to 3,
A plurality of the second fins are provided,
The first fin and the second fin are arranged so that a fin region connecting the first fin and the second fin has a substantially rectangular shape,
Four second fins of the plurality of second fins are power semiconductor modules that form four corners of the substantially rectangular shape.
The power semiconductor module according to claim 4,
The second fins different from the second fins arranged at the four corners are arranged at substantially midpoints of line segments connecting two adjacent second fins among the second fins arranged at the four corners. Power semiconductor module.
A power conversion device comprising any one of the power semiconductor modules according to claim 1,
A flow path forming body for flowing a cooling refrigerant and forming a flow path space for storing the power semiconductor module;
An adjustment member that is disposed in the flow path space and adjusts the flow of the cooling refrigerant,
The second fin is a power conversion device disposed at a position in contact with the adjustment member.
The power conversion device according to claim 6,
The adjusting member forms a protruding portion that protrudes toward the second fin,
The protrusion is a power conversion device in contact with the second fin.
A power conversion device comprising the power semiconductor module according to claim 1,
A plurality of the second fins are provided,
Each of the plurality of first fins is a power conversion device arranged at a position facing the adjustment member with any one of the plurality of second fins interposed therebetween.