WO2015030361A1 - Composition permettant de former une électrode de cellule solaire, et électrode produite à partir de cette composition - Google Patents

Composition permettant de former une électrode de cellule solaire, et électrode produite à partir de cette composition Download PDF

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Publication number
WO2015030361A1
WO2015030361A1 PCT/KR2014/005762 KR2014005762W WO2015030361A1 WO 2015030361 A1 WO2015030361 A1 WO 2015030361A1 KR 2014005762 W KR2014005762 W KR 2014005762W WO 2015030361 A1 WO2015030361 A1 WO 2015030361A1
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Prior art keywords
solar cell
composition
silver
cell electrode
forming
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PCT/KR2014/005762
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English (en)
Korean (ko)
Inventor
박상희
구현진
김태준
송헌규
Original Assignee
제일모직 주식회사
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Priority claimed from KR1020130160769A external-priority patent/KR101693070B1/ko
Application filed by 제일모직 주식회사 filed Critical 제일모직 주식회사
Priority to CN201480043119.5A priority Critical patent/CN105593946B/zh
Priority to US14/901,629 priority patent/US9944802B2/en
Publication of WO2015030361A1 publication Critical patent/WO2015030361A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a composition for forming a solar cell electrode and an electrode prepared therefrom.
  • Solar cells generate electrical energy using the photoelectric effect of pn junctions that convert photons of sunlight into electricity.
  • front and rear electrodes are formed on the upper and lower surfaces of the semiconductor wafer or substrate on which the pn junction is formed.
  • the photovoltaic effect of the pn junction is induced by solar light incident on the semiconductor wafer, and electrons generated therefrom provide a current flowing through the electrode to the outside.
  • the electrode of the solar cell may be formed on the wafer surface by coating, patterning and firing the composition for forming a solar cell electrode.
  • the thickness of the emitter is continuously thinned to increase the efficiency of the solar cell, it may cause a shunting phenomenon that may degrade the performance of the solar cell, and to increase the conversion efficiency. It is gradually increasing the area of the solar cell, which can increase the contact resistance of the solar cell can reduce the efficiency of the solar cell.
  • An object of the present invention is to provide a composition for forming a solar cell electrode excellent in contact between the electrode and the wafer surface.
  • Another object of the present invention is to provide a composition for forming a solar cell electrode which can minimize contact resistance and series resistance.
  • Still another object of the present invention is to provide a solar cell electrode having excellent fill factor and conversion efficiency.
  • Another object of the present invention is to provide an electrode made of the composition.
  • composition for forming a solar cell electrode is silver (Ag) powder; Glass frits containing silver (Ag) and tellurium (Te) elements; And an organic vehicle, wherein the glass frit has a molar ratio of Ag and Te of about 1: 0.1 to about 1:25.
  • the glass frit is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), Zinc (Zn), Tungsten (W), Magnesium (Mg), Cesium (Cs), Strontium (Sr), Molybdenum (Mo), Titanium (Ti), Tin (Sn), Indium (In), Vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese It may further include one or more elements selected from the group consisting of (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).
  • the silver (Ag) element included in the glass frit may be derived from one or more silver compounds selected from the group consisting of silver cyanide, silver nitrate, silver halide, silver carbonate, and silver acetate.
  • the glass frit may be formed from a metal oxide including the silver compound and tellurium (Te) oxide.
  • the metal oxide is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Se), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Ce), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese It may further include one or more selected from the group consisting of (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).
  • the composition comprises about 60 to about 95 weight percent of the silver powder; About 0.1 to about 20 weight percent of the glass frit; And about 1 to about 30% by weight of the organic vehicle.
  • the glass frit may include about 0.1 to about 50 mol% of silver (Ag) element relative to the total number of moles of glass frit.
  • the glass frit may have an average particle diameter (D50) of about 0.1 ⁇ m to about 10 ⁇ m.
  • composition may further include one or more additives selected from the group consisting of dispersants, thixotropic agents, plasticizers, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers, antioxidants and coupling agents.
  • additives selected from the group consisting of dispersants, thixotropic agents, plasticizers, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers, antioxidants and coupling agents.
  • Another aspect of the invention relates to a solar cell electrode prepared from the composition for forming a solar cell electrode.
  • the composition for forming a solar cell electrode of the present invention introduced a silver compound having an ion decomposition temperature of about 1000 ° C. or lower into a glass frit to improve contact between the electrode and the wafer, and the solar cell electrode made of the composition had a contact resistance (Rc). Excellent fill factor and conversion efficiency due to minimization of series resistance (Rs).
  • FIG. 1 is a schematic diagram schematically showing the structure of a solar cell according to an embodiment of the present invention.
  • Composition for forming a solar cell electrode of the present invention is silver (Ag) powder; Glass frits containing silver (Ag) and tellurium (Te) elements; And an organic vehicle, wherein the glass frit may have a molar ratio of Ag and Te of about 1: 0.1 to about 1:25.
  • the present invention will be described in detail.
  • the composition for solar cell electrode formation of this invention uses silver (Ag) powder as electroconductive powder.
  • the silver powder may be a powder having a particle size of nano size or micro size.
  • the silver (Ag) powder may have a size of several tens to hundreds of nanometers or a size of several tens of micrometers.
  • silver powders having different sizes of # 2 or more may be mixed and used.
  • the silver powder may have a spherical, plate or amorphous shape in particle shape.
  • the silver powder may have an average particle diameter (D50) of about 0.1 ⁇ m to about 10 ⁇ m, and more preferably about 0.5 ⁇ m to about 5 ⁇ m.
  • D50 average particle diameter
  • the average particle diameter was measured using a 1064LD model manufactured by CILAS after dispersing the conductive powder in isopropyl alcohol (IPA) at 25 ° C. for 3 minutes with ultrasonic waves. Within this range, the contact resistance and the wire resistance can be lowered.
  • Silver powder may comprise from about 60 to about 95 weight percent of the total weight of the composition. Within this range, it is possible to prevent the conversion efficiency from lowering due to an increase in the resistance, and to prevent pasting from becoming difficult due to the relative decrease in the amount of the organic vehicle. Preferably from about 70 to about 90 weight percent, for example 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90 wt% may be included.
  • the glass frit etches the anti-reflection film during the firing process of the composition for forming a solar cell, generates silver crystal particles in the emitter region to melt the silver particles and lowers the resistance, and It improves the adhesion between the wafers and softens during sintering to induce an effect of lowering the firing temperature.
  • Increasing the area of the solar cell in order to increase the efficiency of the solar cell can increase the contact resistance of the solar cell to minimize damage to the pn junction (pn junction) and at the same time minimize the series resistance.
  • pn junction pn junction
  • the variation in the firing temperature increases with the increase of the wafer of various sheet resistances, it is preferable to use a glass frit that can sufficiently secure thermal stability even at a wide firing temperature.
  • the glass frit of the present invention is formed from silver (Ag) compounds and metal oxides.
  • the glass frit of the present invention may be prepared by mixing, melting, and pulverizing a silver compound and a metal oxide having a temperature of about 1000 ° C. or less decomposed into silver (Ag) ions.
  • the metal oxide may be one or more.
  • the silver compound may be used alone or as a mixture of silver cyanide (AgCN), silver nitrate (AgNO3), silver halide (Ag-X), silver carbonate (Ag2CO3), silver acetate (AgC2H302) and the like as the ion-bonding compound.
  • X may be iodine, fluorine, chlorine or bromine, preferably iodine.
  • the metal oxide comprises tellurium (Te) oxide, and lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga) in addition to the tellurium (Te) oxide ), Antimony (Sb), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr) ), Molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na) ), Potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), neodymium (Nd), chromium (Cr) and one selected from the group consisting of oxides of aluminum (Al) It may further include
  • the glass frit of the present invention made of the silver compound and the metal oxide may include silver (Ag) and tellurium (Te) elements, and the molar ratio of Ag and Te present in the glass frit is about 1: 0.1 to about 1 : 25. Low series resistance and contact resistance can be ensured in the above range.
  • the molar ratio of Ag and Te present in the glass frit may be 1: 0.3 to 1:24, for example, 1: 1 to 1:21.
  • the molar ratio means the molar ratio of each element.
  • the glass frit may include lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Ce), iron (Fe), and lithium ( Li, silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium ( In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium ( It may further include one or more elements selected from the group consisting of Zr), manganese (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).
  • the glass frit may contain about 0.1 to about 50 mol% of silver (Ag) element relative to the total number of moles of glass frit, and preferably about 0.5 to about 40 mol%.
  • the content of each metal element included in the glass frit can be measured by Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES). Since the inductively coupled plasma-atomic emission spectroscopy (ICP-OES) uses a very small amount of sample, it can shorten the sample preparation time, reduce the error due to sample pretreatment, and have an excellent analysis sensitivity.
  • ICP-OES Inductively Coupled Plasma-Optical Emission Spectrometer
  • the inductively coupled plasma-atomic emission spectroscopy is a step of pre-treating a sample, preparing a standard solution, and measuring and converting the concentration of the element to be measured to determine the content of each element present in the glass frit. Can be measured precisely.
  • the pretreatment of the sample may carbonize the sample by dissolving and heating the sample in an appropriate amount using an acid solution capable of dissolving the glass frit as a sample.
  • an acid solution for example, a sulfuric acid (H 2 SO 4) solution or the like may be used.
  • the carbonized sample may be appropriately diluted to a range of analytical concentration of the element to be analyzed with a solvent such as distilled water and hydrogen peroxide (H 2 O 2).
  • the analytical concentration range may be used in a diluted state of about 10,000 times in consideration of the element detection capability of the applied ICP-OES device.
  • the pretreated sample may be calibrated with a standard solution, for example, a standard solution of an element to be analyzed for element measurement when measured with an ICP-OES instrument.
  • the standard solution into the ICP-OES measuring device to create a calibration curve by an external standard method (concentration) of the metal element to be analyzed of the sample pre-treated with the ICP-OES measuring device ( ppm) can be measured and converted to calculate the molar ratio of each element in the glass frit.
  • the glass frit can be prepared from the silver compounds and metal oxides described above using conventional methods. For example, it mixes with the composition of the said silver compound and a metal oxide. Mixing can be performed using a ball mill or planetary mill. The mixed composition is melted at conditions of about 800 ° C. to about 1300 ° C. and quenched at 25 ° C. The obtained result can be ground by a disk mill, planetary mill or the like to obtain a glass frit.
  • the glass frit may have an average particle diameter (D50) of about 0.1 to about 10 ⁇ m, the shape of the glass frit may be spherical or irregular.
  • the glass frit is about 0.1 to about 20% by weight, preferably about 0.5 to about 10% by weight, for example 1, 2, 2.5, 3, 3.5, 4, 4.5, It is preferably included in 5, 5.5, 6, 6.5, 7, 8, 9, 10% by weight. When it is contained in the above range, it is possible to ensure the pn junction stability under various sheet resistance, to minimize the series resistance value, and finally to improve the efficiency of the solar cell.
  • the organic vehicle imparts suitable viscosity and rheological properties to the composition through mechanical mixing with the inorganic component of the composition for forming a solar cell electrode.
  • the organic vehicle may be an organic vehicle that is typically used in a composition for forming a solar cell electrode, and may include a binder resin and a solvent.
  • the binder resin an acrylate-based or cellulose-based resin can be used.
  • ethyl cellulose may be used as the binder resin.
  • the binder resin is ethyl hydroxyethyl cellulose, nitro cellulose, a mixture of ethyl cellulose and phenol resin, alkyd resin, phenol resin, acrylic ester resin, xylene resin, polybutene resin, polyester resin.
  • the solvent for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether) Butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, gamma butyrolactone or ethyl lactate alone or the like It can mix and use 2 or more types.
  • the organic vehicle may be included in about 1 to about 30% by weight based on the total weight of the composition for forming a solar cell electrode. It is possible to secure sufficient adhesive strength and excellent printability in the above range.
  • the composition for forming a solar cell electrode of the present invention may further include a conventional additive as needed to improve the flow characteristics, process characteristics and stability in addition to the components described above.
  • the additive may be used alone or in combination of two or more of a dispersant, thixotropic agent, plasticizer, viscosity stabilizer, antifoaming agent, pigment, ultraviolet stabilizer, antioxidant, coupling agent and the like. They may be included in about 0.1 to about 5% by weight relative to the total weight of the composition for forming a solar cell electrode, but may be changed in content as necessary.
  • Another aspect of the invention relates to an electrode formed from the composition for forming a solar cell electrode and a solar cell comprising the same.
  • 1 illustrates a structure of a solar cell according to an embodiment of the present invention.
  • a composition for forming an electrode is printed and baked on a wafer 100 or a substrate including a p layer (or n layer) 101 and an n layer (or p layer) 102 as an emitter.
  • the rear electrode 210 and the front electrode 230 may be formed.
  • the electrode forming composition may be printed on the back side of the wafer and then dried at a temperature of about 200 ° C. to 400 ° C. for about 10 to 60 seconds to perform a preliminary preparation step for the back electrode.
  • the composition for forming an electrode on the front surface of the wafer may be printed and dried to perform a preliminary preparation step for the front electrode. Thereafter, a firing process may be performed at about 400 ° C. to about 950 ° C., preferably about 700 ° C. to about 950 ° C., for about 30 seconds to about 210 seconds to form a front electrode and a rear electrode.
  • Spherical silver powder (Dowa Hightech CO) having an average particle diameter of 2.0 ⁇ m after dissolving 3.0 wt% of ethyl cellulose (DTH chemical company, ETHOCEL STD4) as an organic binder in 6.5 wt% of solvent butyl carbitol at 60 ° C.
  • a composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that the glass frit prepared with the composition of Table 1 was used.
  • Silver nitrate (AgNO3) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 2 below.
  • Silver iodide (AgI) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 3 below.
  • Silver carbonate (Ag2CO3) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 4 below.
  • a silver compound (AgC 2 H 3 O 2) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared in the composition of Table 5 below.
  • a composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that the glass frit prepared with the composition of Table 6 was used.
  • Pretreatment of the sample 0.5g of glass frit, the sample to be analyzed, is placed in a beaker and accurately weighed to 0.0001g. 5 ml of sulfuric acid (H 2 SO 4) was added to a beaker containing the sample, and the sample was completely carbonized by heating at 220 ° C. for 3 hours using a hot plate. Pretreatment was completed by adding hydrogen peroxide (H 2 O 2) until the beaker containing the carbonized sample became transparent.
  • H 2 SO 4 sulfuric acid
  • Standard solutions of the silver (Ag) and tellurium (Te) elements which are the analysis target elements, were prepared, respectively.
  • composition for forming a solar cell electrode prepared in Examples and Comparative Examples was printed by screen printing in a predetermined pattern on the entire surface of a crystalline mono wafer (Wafer), and dried using an infrared drying furnace.
  • the cell formed by the above process was calcined for 30 seconds to 210 seconds between 700 to 950 ° C. using a belt type kiln, and the cell thus manufactured was contacted (Rc) of the solar cell using a TLM (Transfer Length Method) measuring equipment. ) was measured and shown in Tables 8 to 13, respectively.
  • the composition for forming a solar cell electrode according to the above Examples and Comparative Examples was printed by screen printing in a predetermined pattern on the entire surface of a crystalline mono wafer (Wafer), and dried using an infrared drying furnace. After printing the aluminum paste on the back of the back of the wafer and dried in the same manner.
  • the cell formed by the above process was fired for 30 seconds to 210 seconds in a temperature range of 700 to 950 ° C. using a belt-type kiln, and the cell thus manufactured was manufactured using a solar cell efficiency measuring device (Pasan, CT-801).
  • the series resistance (Rs), fill factor (FF,%) and conversion efficiency (%) of the solar cell were measured and shown in Tables 8 to 13, respectively.
  • the electrodes of Examples 1 to 93 in which the molar ratio of Ag and Te in the glass frit is 1: 0.1 to 1:25 are Comparative Examples 1 in which the molar ratio of Ag and Te is outside the above range. And compared with the electrode of the comparative example 2 which does not contain a silver (Ag) element, it can be seen that it is low in contact resistance and series resistance, and excellent in Fill Factor and conversion efficiency.

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Abstract

La présente invention se rapporte à une composition permettant de former une électrode de cellule solaire, ladite composition comprenant : une poudre d'argent (Ag) ; une fritte de verre comportant des éléments en argent (Ag) et en tellure (Te) ; et un véhicule organique. La fritte de verre présente un rapport molaire entre Ag et Te compris entre 1:01 et 1:25. L'électrode de cellule solaire produite à partir de la composition présente un excellent facteur de remplissage et une excellente efficacité de conversion, étant donné que la résistance de contact (Rc) et la résistance série (Rs) sont réduites à un minimum.
PCT/KR2014/005762 2013-08-28 2014-06-27 Composition permettant de former une électrode de cellule solaire, et électrode produite à partir de cette composition WO2015030361A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480043119.5A CN105593946B (zh) 2013-08-28 2014-06-27 形成太阳能电池电极用组成物及使用该组成物制造的电极
US14/901,629 US9944802B2 (en) 2013-08-28 2014-06-27 Composition for forming solar cell electrode and electrode produced from same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20130102759 2013-08-28
KR10-2013-0102759 2013-08-28
KR1020130160769A KR101693070B1 (ko) 2013-08-28 2013-12-20 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
KR10-2013-0160769 2013-12-20

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WO2015030361A1 true WO2015030361A1 (fr) 2015-03-05

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100069699A (ko) * 2007-09-27 2010-06-24 가부시키가이샤 무라타 세이사쿠쇼 Ａｇ 전극 페이스트, 태양전지 셀 및 그 제조방법
KR20100125273A (ko) * 2008-01-30 2010-11-30 바스프 에스이 유리 프릿
WO2011046365A2 (fr) * 2009-10-13 2011-04-21 주식회사 엘지화학 Composition de pâte à l'argent et pile solaire l'utilisant
KR20120084045A (ko) * 2011-01-19 2012-07-27 한국화학연구원 나노사이즈 유리 프릿을 포함하는 실리콘 태양전지 전극 형성용 전도성 잉크 조성물 및 이를 이용한 태양전지 제조방법
KR20130018344A (ko) * 2013-01-04 2013-02-20 제일모직주식회사 태양전지 전극용 페이스트, 그 제조방법 및 이를 이용한 태양전지 전극

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100069699A (ko) * 2007-09-27 2010-06-24 가부시키가이샤 무라타 세이사쿠쇼 Ａｇ 전극 페이스트, 태양전지 셀 및 그 제조방법
KR20100125273A (ko) * 2008-01-30 2010-11-30 바스프 에스이 유리 프릿
WO2011046365A2 (fr) * 2009-10-13 2011-04-21 주식회사 엘지화학 Composition de pâte à l'argent et pile solaire l'utilisant
KR20120084045A (ko) * 2011-01-19 2012-07-27 한국화학연구원 나노사이즈 유리 프릿을 포함하는 실리콘 태양전지 전극 형성용 전도성 잉크 조성물 및 이를 이용한 태양전지 제조방법
KR20130018344A (ko) * 2013-01-04 2013-02-20 제일모직주식회사 태양전지 전극용 페이스트, 그 제조방법 및 이를 이용한 태양전지 전극

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