WO2015014037A1 - 一种阵列基板及其制备方法、显示装置 - Google Patents

一种阵列基板及其制备方法、显示装置 Download PDF

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WO2015014037A1
WO2015014037A1 PCT/CN2013/086609 CN2013086609W WO2015014037A1 WO 2015014037 A1 WO2015014037 A1 WO 2015014037A1 CN 2013086609 W CN2013086609 W CN 2013086609W WO 2015014037 A1 WO2015014037 A1 WO 2015014037A1
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array substrate
substrate
layer
insulating layer
photoresist
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English (en)
French (fr)
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王新星
柳在建
姚继开
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/381,619 priority Critical patent/US10067377B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133504—Diffusing, scattering, diffracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Definitions

  • the viewing angle requires more than 30°, and the single specular reflection mode applied to small-sized products is no longer applicable, and the viewing angle must be increased.
  • a method for increasing the viewing angle is disclosed in the prior art, and the surface of the reflective layer is treated by a mechanical friction or etching process to form an uneven surface, and the uneven surface can be used as a diffuse reflective surface to increase the range of the light reaching region. , which can increase the angle of view.
  • the surface of the resulting reflective layer is detrimental to the planar orientation of the liquid crystal molecules because of the greater degree of mechanical friction or etch process damage.
  • this method increases the viewing angle, the alignment uniformity of the liquid crystal molecules is lowered, thereby lowering the properties such as transmittance, contrast, and dark state uniformity.
  • the technical problem to be solved by the present invention is: How to provide an array substrate, a preparation method thereof, and a display device, which increase the display viewing angle and avoid the reduction of the alignment uniformity of liquid crystal molecules.
  • the present invention provides an array substrate comprising: a substrate, a thin film transistor and a passivation layer formed on one side of the substrate, and the array substrate is divided into a reflective region and An insulating layer is formed on the reflective region of the passivation layer away from the substrate; and a nanoparticle layer for diffusely reflecting incident light is formed on a side of the insulating layer away from the substrate.
  • the nanoparticle layer comprises metal oxide nanoparticles.
  • the metal oxide nanoparticles are at least one selected from the group consisting of nano titanium dioxide particles, nano aluminum oxide particles, and nano zinc oxide particles.
  • the insulating layer is made of a resin or a silica material.
  • the invention also provides a display device comprising the array substrate.
  • the invention also provides a method for preparing an array substrate, wherein the array substrate is divided into a reflective area and a transmissive area, and the preparation method comprises:
  • the photoresist is subjected to an exposure treatment to form a nanoparticle layer.
  • the preparation method further comprises: performing a drying process on the substrate on which the nanoparticle layer is formed.
  • the step of coating the photoresist doped with the nanoparticle on the insulating layer is: masking a transmissive region of the passivation layer with a mask, and coating the doped layer on the insulating layer Nanoparticle photoresist.
  • the nanoparticles are metal oxide nanoparticles, and more preferably at least one selected from the group consisting of nano titanium dioxide particles, nano aluminum oxide particles, and nano zinc oxide particles.
  • the insulating layer is composed of a resin or a silica material.
  • the resin is not limited to an epoxy resin, a polyester resin, a polyimide resin, a phenol resin, an organic fluororesin, a silicone resin, or the like.
  • An array substrate according to an embodiment of the present invention includes: a substrate, a thin film transistor formed on one side of the substrate, and a passivation layer, and the array substrate is divided into a reflective region and a transmissive region; wherein an insulating layer is formed on a reflective region of the passivation layer away from the substrate; and a diffuse reflection for incident light is formed on a side of the insulating layer away from the substrate Nanoparticle layer.
  • the array substrate Since the thickness of the nanoparticle layer is uniform, it does not occur The uneven surface affects the orientation uniformity of the liquid crystal molecules on the surface of the nanoparticle layer, so the array substrate not only increases the viewing angle, but also ensures the transmittance, the contrast, and the uniformity of the dark state, and is particularly suitable for large sizes. Display device for outdoor display. DRAWINGS
  • FIG. 1 is a schematic structural view of an array substrate according to Embodiment 1 of the present invention.
  • FIG. 2 is a flowchart of a method for preparing an array substrate according to Embodiment 3 of the present invention
  • 3a to 3e are flow charts showing a process of preparing the array substrate according to Embodiment 3 of the present invention.
  • the array substrate includes: a substrate 1 10, a thin film transistor (TFT) 120 and a passivation layer 130 formed on the side of the substrate 110, and the array substrate is divided into Reflective and transmissive areas.
  • the passivation layer 130 is formed with an insulating layer 140 away from the substrate 110, and the insulating layer 140 is formed at a side away from the substrate 110 to form a nanoparticle layer for diffusely reflecting incident light. 150.
  • the insulating layer 140 may be made of an insulating material such as resin or silicon dioxide.
  • the insulating layer 140 has the following advantages: On the one hand, the static electricity on the nano-particle layer 150 can be prevented from causing damage to the circuit on the passivation layer 130; on the other hand, the surface of the passivation layer 130 is generally embossed The unevenness is not conducive to the formation of the nanoparticle layer 150 having a uniform thickness. After the insulating layer 140 is disposed, a relatively flat substrate can be provided for forming the nanoparticle layer 150, which is favorable for forming the nanoparticle with uniform thickness. Layer 150.
  • the nanoparticle layer 150 includes nanoparticles 151, which may be metal oxide nanoparticles, for example, at least one of nano titanium dioxide particles, nano-niobium oxide particles, and nano zinc oxide particles.
  • the nanoparticles 151 are stacked on the surface of the insulating layer 140 to form reflective regions of different curvatures, so that incident light energy can be reflected from different angles, thereby achieving an effect of increasing the viewing angle.
  • the nanoparticle 151 is an inorganic particle which can be well dispersed in a polymer material, and thus the nanoparticle layer obtained!
  • the thickness of 50 is uniform, and an uneven surface is not generated to affect the orientation uniformity of liquid crystal molecules on the surface of the nanoparticle layer 150. Therefore, the array substrate of the present invention not only increases the viewing angle, but also ensures the transmittance, the contrast, and the uniformity of the dark state, and is an array substrate suitable for a large-sized outdoor display device.
  • Example 2
  • the embodiment provides a display device, and the display device includes the array substrate described in Embodiment 1.
  • the display device may be a small-sized display device such as a mobile phone, a tablet computer, or a portable notebook, or may be a large-sized outdoor display such as a square TV, an open-air movie theater, or a large billboard.
  • FIG. 2 is a flow chart of a method for fabricating an array substrate according to Embodiment 3 of the present invention
  • FIGS. 3a to 3e are flowcharts showing a process for preparing an array substrate according to Embodiment 3 of the present invention.
  • the preparation method includes:
  • a thin film transistor 120 and a passivation layer 130 are formed on the substrate 1 10.
  • the thin film transistor 120 and the passivation layer 130 may be sequentially formed on the substrate 1 10 according to an existing process, and details are not described herein again.
  • This step 210 results in a structure as shown in Figure 3a.
  • An insulating layer 140 is formed on the reflective region of the passivation layer 130.
  • the insulating layer 140 may be made of an insulating material such as resin or silicon dioxide.
  • the insulating layer 140 has the following advantages: on the one hand, the static electricity on the nanoparticle layer 150 described later can be prevented from causing damage to the circuit on the passivation layer 130; on the other hand, the surface of the passivation layer 130 is generally concave and convex. The unevenness is not conducive to the formation of the nanoparticle layer 150.
  • a relatively flat substrate can be provided for forming the nanoparticle layer 150. After this step 220, the structure shown in Fig. 3b is formed.
  • a photoresist 310 doped with nanoparticles 151 is coated on the insulating layer 140.
  • the step may include: shielding a transmissive area of the passivation layer 130 with a mask, and coating the photoresist 310 doped with the nanoparticles 151 on the insulating layer 140. After this step 230, the structure shown in Fig. 3c is formed.
  • the nanoparticle 151 may be at least one of metal oxide nanoparticles, for example, nano titanium dioxide particles, nano aluminum oxide particles, and nano zinc oxide particles, and the nanoparticles 151 are uniformly dispersed in the light. Engraved in the glue 310.
  • a portion of the photoresist 310 may be removed by exposing the photoresist 310 to deposition of the nanoparticles 151 dispersed in the photoresist 310 on the insulating layer 140. . After this step 240, a structure as shown in Fig. 3d is formed.
  • the step 240 may further include a step 250: removing the photoresist 310 after the exposure process.
  • the exposed photoresist 310 may be dissolved in a solvent, and after the step 250, a structure as shown in Fig. 3e is formed.
  • the method may further include: drying the substrate 110 on which the nanoparticle layer 150 is formed by solvent dissolution treatment. .
  • the array substrate is obtained by the above preparation method, and the nanoparticles 151 are deposited on the surface of the insulating layer 140 to form reflective regions of different curvatures, so that incident light energy can be reflected from different angles, thereby achieving an effect of increasing the viewing angle.
  • the nanoparticle 151 is an inorganic particle which can be well dispersed in the polymer material, so that the obtained nanoparticle layer 150 has a uniform thickness and does not generate an uneven surface and affects the liquid crystal molecules in the nanometer. Orientation uniformity of the surface of the particle layer 150. Therefore, the array substrate of the present invention not only increases the viewing angle, but also ensures the transmittance, the contrast, and the uniformity of the dark state, and is an array substrate suitable for a large-sized outdoor display device.

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Abstract

一种阵列基板及其制备方法、显示装置。所述阵列基板，包括：基板（110），形成在所述基板（110）一侧的薄膜晶体管（120）和钝化层（130），并且所述阵列基板划分为反射区和透射区；在所述钝化层（130）远离所述基板（110）一侧的反射区形成有绝缘层（140）；在所述绝缘层（140）远离所述基板（110）的一侧形成有用于对入射光进行漫反射的纳米粒子层（150）。所述纳米粒子层（150）的厚度均匀，不会产生不平整表面而影响液晶分子在所述纳米粒子层（150）表面的取向均匀性，所述阵列基板不仅增加了视角，还保证了透过率、对比度以及暗态均匀性等性能，特别适用于大尺寸户外显示的显示装置。

Description

基板及其制备方法、 显示
随着显示技术的日益发展， 户外显示装置不再局限于小尺寸的手机、 平 板电脑以及便携式笔记本等。 对于一些大尺寸的产品， 例如广场电视、 露天 电影院以及大型广告牌等显示装置来说， 对户外可视性提出了更高的要求， 现有的提高户外可视性的技术为半透半反技术， 也就是说对半透半反技术提 出了更高的要求。
对于大尺寸半透半反技术来说，视角要求超过 30° ,应用于小尺寸产品的 单一镜面反射模式不再适用， 必须增加视角。
现有技术中公开了一种增加视角的方法， 采用机械摩擦或者刻蚀工艺对 反射层的表面进行处理以形成不平整表面， 这种不平整表面可以作为漫反射 表面使光线达到的区域范围增加， 从而可以增加视角。 但是因为机械摩擦或 者刻蚀工艺的破坏程度较大， 因此得到的反射层表面不利于液晶分子的平面 取向。 虽然这种方法增加了视角， 但是降低了液晶分子的取向均匀性， 从而 降低了透过率、 对比度以及暗态均匀性等性能。
(一） 要解决的技术问题
本发明要解决的技术问题是： 如何提供一种阵列基板及其制备方法、 显 示装置， 该显示装置增加了显示视角， 同^避免降低液晶分子的取向均匀性。
(二） 技术方案
为解决上述技术问题， 本发明提供一种阵列基板， 包括： 基板、 形成在 所述基板一侧的薄膜晶体管和钝化层， 并且所述阵列基板被划分为反射区和 在所述钝化层远离所述基板一侧的反射区上形成有绝缘层； 在所述绝缘层远离所述基板的一侧上形成有用于对入射光迸行漫反射的 纳米粒子层。
优选地， 所述纳米粒子层包含金属氧化物纳米粒子。
优选地， 所述金属氧化物纳米粒子为选自纳米二氧化钛粒子、 纳米三氧 化二铝粒子和纳米氧化锌粒子中的至少一种。
优选地， 所述绝缘层采用树脂或者二氧化硅材料。
本发明还提供一种显示装置， 包括所述的阵列基板。
本发明还提供一种阵列基板的制备方法， 所述阵列基板被划分为反射区 和透射区， 所述制备方法包括：
在基板上形成薄膜晶体管和钝化层；
在所述钝化层的反射区上形成绝缘层；
在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶；
对所述光刻胶进行曝光处理， 形成纳米粒子层。
优选地， 所述制备方法还包括： 对形成有所述纳米粒子层的基板进行烘 千处理。
优选地， 在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶的歩骤为： 采用 掩膜板遮蔽所述钝化层的透射区， 在所述绝缘层上涂覆掺杂有纳米粒子的光 刻胶。
优选地， 所述纳米粒子为金属氧化物纳米粒子， 进一步优选为选自纳米 二氧化钛粒子、 纳米三氧化二铝粒子和纳米氧化锌粒子中的至少一种。
优选地， 所述绝缘层由树脂或者二氧化硅材料构成。 所述树脂不限于环 氧树脂、 聚酯树脂、 聚酰亚胺树脂、 酚醛树脂、 有机氟树脂和有机硅树脂等。
(≡) 有益效果
根据本发明实施例的阵列基板、 或者根据本发明的方法所制备的阵列基 板包括： 基板、 形成在所述基板一侧的薄膜晶体管和钝化层， 并且所述阵列 基板被划分为反射区和透射区； 其中， 在所述钝化层远离所述基板一侧的反 射区上形成有绝缘层； 在所述绝缘层远离所述基板的一侧上形成有用于对入 射光迸行漫反射的纳米粒子层。 由于所述纳米粒子层的厚度均匀， 不会产生 不平整表面而影响液晶分子在所述纳米粒子层表面的取向均匀性， 所以所述 阵列基板不仅增加了视角， 还保证了透过率、对比度以及暗态均匀性等性能， 特别适用于大尺寸户外显示的显示装置。 附图说明
图 1是本发明实施例 1所述的阵列基板的结构示意图；
图 2是本发明实施例 3所述的阵列基板的制备方法的流程图；
图 3a至 3e是本发明实施例 3所述的阵列基板的制备工艺的流程图。
下面结合^图和实施例， 对本发明的具体实施方式作进一歩详细描述。 以下实施例用于说明本发明， 但不用来限制本发明的范围。
图 1是本发明实施例 1所述阵列基板的结构示意图。 如图 1所示， 所述 阵列基板包括： 基板 1 10, 形成在所述基板 1 10—侧的薄膜晶体管 (TFT, Thm Film Transistor)120和钝化层 130， 并且所述阵列基板被划分为反射区和透射 区。在所述反射区，所述钝化层 130远离所述基板 110—侧形成有绝缘层 140， 所述绝缘层 140远离所述基板 110—侧形成有用于对入射光进行漫反射的纳 米粒子层 150。
具体地， 所述绝缘层 140可以由树脂、 二氧化硅等绝缘材料构成。 设置 所述绝缘层 140具有以下优点： 一方面可以避免所述纳米粒子层 150上的静 电对所述钝化层 130上的电路造成破坏； 另一方面， 所述钝化层 130的表面 一般凹凸不平， 不利于形成厚度均匀的所述纳米粒子层 150, 通过设置所述 绝缘层 140后， 可以为形成所述纳米粒子层 150提供一个较平坦的基底， 有 利于形成厚度均匀的所述纳米粒子层 150。
所述纳米粒子层 150包含纳米粒子 151， 所述纳米粒子 151可以是金属 氧化物纳米粒子， 例如， 纳米二氧化钛粒子、 纳米≡氧化二铝粒子和纳米氧 化锌粒子中的至少一种。 所述纳米粒子 151在所述绝缘层 140的表面上堆积成不同弧度的反射区 域， 使入射光能从不同的角度反射出去， 因此能达到增加视角的效果。 同时， 所述纳米粒子 151 是一种能很好分散于高分子材料中的无机粒子， 因此得到 的所述纳米粒子层 ！50的厚度均匀， 不会产生不平整表面而影响液晶分子在 所述纳米粒子层 1 50的表面上的取向均匀性。 因此， 本发明的阵列基板不仅 增加了视角， 还保证了透过率、 对比度以及暗态均匀性等性能， 是一种适用 于大尺寸户外显示装置的阵列基板。 实施例 2
本实施例提供一种显示装置， 所述显示装置包括实施例 1所述的阵列基 板。 所述显示装置可以是手机、 平板电脑以及便携式笔记本等小尺寸的显示 装置， 也可以是广场电视、 露天电影院以及大型广告牌等大尺寸的户外显示 直 实施例 3
图 2是本发明实施例 3所述的阵列基板的制备方法的流程图，图 3a至 3e 是本发明实施例 3所述的阵列基板的制备工艺的流程图。参见图 2和图 3a至 3e, 所述制备方法包括：
210： 在基板 1 10上形成薄膜晶体管 120和钝化层 130。
具体地， 可以按照现有工艺在基板 1 10上依次形成薄膜晶体管 120和钝 化层 130 , 在此不再赘述。 该步骤 210后得到如图 3a所示的结构。
220： 在所述钝化层 130的反射区上形成绝缘层 140。
具体地， 所述绝缘层 140可以由树脂或者二氧化硅等绝缘材料构成。 设 置所述绝缘层 140具有以下优点： 一方面可以避免后述纳米粒子层 150上的 静电对所述钝化层 130上的电路造成破坏； 另一方面， 所述钝化层 130的表 面一般凹凸不平， 不利于形成所述纳米粒子层 150， 通过设置所述绝缘层 140 后，可以为形成所述纳米粒子层 150提供一个较平坦的基底。经过该步骤 220 后形成图 3b所示的结构。
230： 在所述绝缘层 140上涂覆掺杂有纳米粒子 151的光刻胶 310。 具体地， 该步骤可以包括： 采用掩膜板遮蔽所述钝化层 130的透射区， 在所述绝缘层 140上涂覆掺杂有纳米粒子 151的光刻胶 310。经过该步骤 230 后， 形成图 3c所示的结构。
其中， 所述纳米粒子 151 可以为金属氧化物纳米粒子， 例如， 纳米二氧 化钛粒子、 纳米三氧化二铝粒子和纳米氧化锌粒子中的至少一种， 并且所述 纳米粒子 151均匀分散于所述光刻胶 310中。
240： 对所述光刻胶 310进行曝光处理， 形成纳米粒子层 150。
具体地， 通过对所述光刻胶 310迸行曝光处理， 可以去除部分所述光刻 胶 310, 从而使所述光刻胶 310中分散的所述纳米粒子 151沉积于所述绝缘 层 140上。 经过该步骤 240后， 形成如图 3d所示的结构。
另外， 所述歩骤 240之后还可以包括步骤 250: 去除曝光处理后的光刻 胶 310。
具体地， 可以采用溶剂溶解曝光处理后的光刻胶 310, 经过该步骤 250 后形成如图 3e所示的结构。
为了使所述纳米粒子层 150快速的稳定形成于所述绝缘层 140上， 所述 方法还可以进一步包括： 对用溶剂溶解处理后而形成有所述纳米粒子层 150 的基板 110进行烘干处理。
经过上述制备方法得到阵列基板， 所述纳米粒子 151 在所述绝缘层 140 的表面上堆积成不同弧度的反射区域， 使入射光能从不同的角度反射出去， 因此能达到增加视角的效果。 同时， 所述纳米粒子 151是一种能很好分散于 高分子材料中的无机粒子， 因此得到的所述纳米粒子层 150的厚度均匀， 不 会产生不平整表面而影响液晶分子在所述纳米粒子层 150 表面的取向均匀 性。 因此， 本发明的阵列基板不仅增加了视角， 还保证了透过率、 对比度以 及暗态均匀性等性能， 是一种适 ^于大尺寸户外显示装置的阵列基板。
以上实施方式仅用于说明本发明， 而并非对本发明的限制。 有关技术领 域的普通技术人员， 在不脱离本发明的精神和范围的情况下， 还可以做出各 种变化和变型， 因此所有等同的技术方案也属于本发明的范畴， 本发明的专 利保护范围应由权利要求限定。

Claims

1. 一种阵列基板， 包括： 基板、形成在所述基板一侧的薄膜晶体管和钝化 层， 并且所述阵列基板被划分为反射区和透射区；
其特征在于， 在所述钝化层远离所述基板一侧的反射区上形成有绝缘 层；
在所述绝缘层远离所述基板的一侧上形成有用于对入射光迸行漫反射的 纳米粒子层。
2. 如权利要求 1 所述的阵列基板， 其特征在于， 所述纳米粒子层包含金 属氧化物纳米粒子。
3. 如权利要求 2所述的阵列基板， 其特征在于， 所述金属氧化物纳米粒 子为选自纳米二氧化钛粒子、 纳米三氧化二铝粒子和纳米氧化锌粒子中的至 少一种。
4. 如权利要求 1 所述的阵列基板， 其特征在于， 所述绝缘层由树脂或者 二氧化硅材料构成。
5. 一种显示装置， 其特征在于， 包括权利要求 1至 4中任一项所述的阵列
6. 一种阵列基板的制备方法， 所述阵列基板被划分为反射区和透射区，所 述制备方法包括：
在基板上形成薄膜晶体管和钝化层；
在所述钝化层的反射区上形成绝缘层； 以及
在所述绝缘层上形成纳米粒子层。
7. 根据权利要求 6所述的制备方法，其中，在所述绝缘层上形成纳米粒子 层的步骤包括：
在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶； 以及
对所述光刻胶进行曝光处理， 形成纳米粒子层。
8. 如权利要求 6所述的制备方法，其特征在于，所述制备方法还包括去除 曝光处理后的光刻胶。
9. 如权利要求 8所述的制备方法，其特征在于，所述去除曝光处理后的光 刻胶是采用溶剂溶解曝光处理后的光刻胶。
10. 如权利要求 9所述的制备方法， 其特征在于， 所述制备方法还包括： 对用溶剂溶解处理后而形成有所述纳米粒子层的基板迸行烘干处理。
11. 如权利要求 7所述的制备方法， 其特征在于， 在所述绝缘层上涂覆掺 杂有纳米粒子的光刻胶的步骤为： 采用掩膜板遮蔽所述阵列基板的透射区， 在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶。
12. 如权利要求 7所述的制备方法， 其特征在于， 所述纳米粒子为金属氧 化物纳米粒子。
13. 如权利要求 12 所述的制备方法， 其特征在于， 所述金属氧化物纳米 粒子为选自纳米二氧化钛粒子、 纳米三氧化二铝粒子和纳米氧化锌粒子中的 至少一种。
14. 如权利要求 6所述的制备方法， 其特征在于， 所述绝缘层采用树脂或 者二氧化硅材料。
PCT/CN2013/086609 2013-07-29 2013-11-06 一种阵列基板及其制备方法、显示装置 Ceased WO2015014037A1 (zh)

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