WO2015003343A1

WO2015003343A1 - Superlubricity basic structure, multi-stage superlubricity structure, device with structure, and forming method therefor

Info

Publication number: WO2015003343A1
Application number: PCT/CN2013/079132
Authority: WO
Inventors: 郑泉水; 董华来; 刘泽; 江博; 王稳
Original assignee: 清华大学
Priority date: 2013-07-10
Filing date: 2013-07-10
Publication date: 2015-01-15

Abstract

A superlubricity basic structure comprises a substrate and multiple island structures on the substrate, each island structure is provided with at least one superlubricity shearing surface, and an upper contact surface and a lower contact surface of the superlubricity shearing surface are in an incommensurate contact state. A multi-stage superlubricity structure. The multi-stage superlubricity structure comprises multiple superlubricity basic structures, and the multiple superlubricity basic structures form the multi-stage superlubricity structure in a side-by-side extension mode, an independent stacking mode, a sharing-type stacking mode or a combination thereof. A method for forming the superlubricity basic structure comprises the following steps: proving a substrate; preparing an island structure and making the island structure connected to the substrate; detecting whether the island structure has a superlubricity shearing surface; and removing an island without a superlubricity shearing surface. The superlubricity basic structure breaks the limit of microcosmic superlubricity, and large-scale and large slippage stroke superlubricity is achieved.

Description

Ultra-sliding basic structure, multi-stage superslip structure, device having the same and method of forming the same

The invention relates to the field of structural ultra-slip, in particular to a solid super-sliding structure with large scale and large sliding distance, which is used in the field requiring ultra-low friction or ultra-low wear. Say

Background technique

Friction and wear have always affected people's production and life. According to statistics, there are about three-thirds of the books in the world.

The energy consumption of friction is about 80% of mechanical parts failing due to wear and tear. The loss caused by friction and wear in industrial developed countries is as high as 5%-7% of GDP. An important problem of artificial joints is to obtain better Lubrication properties to mitigate friction and wear problems (see Unsworth A. Recent developments in the tribology of artificial joints [J]. Tribology International, 1995, 28(7): 485-495.). As a result, humans have been trying to control and reduce friction for thousands of years in an effort to create a material or structure that is extremely low friction and extremely resistant to wear. Most materials have a friction coefficient of 0.1 to 0.5. After adding a lubricant, a lower coefficient of friction (0.01 to 0.1) can be achieved, but the friction and wear problems cannot be fundamentally solved. Therefore, it is of great value to produce a material or structure that is extremely low friction and extremely resistant to wear.

In 1991, the researchers theoretically proposed that when two single crystal faces are contacted in a non-common form (ie, when the lattice constants of the two surfaces do not match), there is a possibility that the friction is zero or almost zero. This phenomenon is called "superlubricity" (see Himno M, Shinjo K, Kaneko R, et al. Anisotropy of frictional forces in muscovite mica [J]. Physical review letters, 1991, 67(19): 2642 . ) Due to the direct contact of the solid surface, the advantage of ultra-slip, in addition to the friction coefficient is almost zero, there is a high possibility of extreme wear resistance, so its application range will be more extensive. But until 2011, people only achieved nano-scale superslip in an ultra-high vacuum environment, and doubted whether large-scale ultra-slip can be achieved. In 2012, the micro-scale superslip in the indoor environment was observed for the first time (see Liu Z, Yang J, Grey F, et al. Observation of Microscale Superlubricity in Graphite [J]. Physical Review Letters, 2012, 108(20): 205503. ).

On the other hand, since 1994, several research groups have achieved ultra-low friction with a friction coefficient as low as one thousandth, and are above the millimeter scale (Donnet C, Martin JM, Le Mogne T, et al. Super-low friction of MoS2 coatings in various environments [J]. Tribology International, 1996, 29(2): 123-128. ) ₀ Due to the long-term failure to achieve large-scale superslip, it has been common in the literature for more than a decade. A phenomenon in which the coefficient of friction is on the order of one thousandth or less, called "super-slip"; and the phenomenon that the initial frictional wear due to incommensurate contact is almost zero is called "structural lubrication" ( Structural Lubricity) (See Miiser M H. Structural lubricity: Role of dimension and symmetry [J]. EPL (Europhysics Letters), 2004, 66(1): 97.). The term "superslip" as used in the present invention refers to a phenomenon in which frictional wear is almost zero due to non-common contact.

Due to the difficulty in preparing large-scale single crystal materials, the solid structural lubrication that can be experimentally achieved is limited to micrometers or smaller scales, and the preparation of large-scale structural ultraslip devices has not been realized. Therefore, there is a need for a solid superslip device that can achieve large scales (up to centimeters, or even larger scales), and can achieve large sliding displacements. Summary of the invention

In order to solve the above problems, according to a first embodiment of the present invention, there is provided an ultraslip basic structure including a substrate, and a plurality of island-like structures on the substrate, wherein each of the island structures has at least one ultra-slipper The cut surface, the upper and lower contact faces of the super-slip shear surface are in a non-common contact state.

Specifically, the single island-like structure has a diameter of 1 μm to 30 μm and a height of 10 nm to 10 μm. The average spacing between adjacent island structures is 1 μιη to 100 μιη.

Furthermore, each island structure may include a protective layer at its ends. The plurality of island structures and the base may be connected in a one-piece structure or a split structure.

The island structure may be a graphite material, or the atoms inside the island structure material may have localized non-common contact between layers; or the island structure may be coated with graphite or graphene on the shear plane.

The area of the upper and lower contact faces of the superslip shear plane of the island structure may be the same or different.

In addition, a support layer covering the island-like structure may also be included. The substrate and support layer can be planar, curved or flexible deformable sheet-like solid materials. According to a second embodiment of the present invention, there is provided a multi-stage superslip structure comprising the plurality of superslip basic structures, the plurality of superslip basic structures being expanded side by side, independent Superimposed, shared superimposed or a combination thereof forms a multi-stage superslip structure, wherein

The side-by-side extended configuration is to distribute a plurality of the superslip basic structures side by side between a global base and a global support layer, the global base and the global support layer being flat, curved or flexible deformable a sheet-like solid material, the global substrate being connected to all of the substrates of the ultraslip basic structure, the global support layer being connected to all of the support layers of the superslip basic structure;

The independent superposition composition is formed by connecting the support layer of the Nth superslip basic structure and the substrate of the (N+1)th superslip basic structure;

The shared superposition is composed by using the support layer of the Nth superslip basic structure as the substrate of the N+1th superslip basic structure at the same time.

According to a third embodiment of the present invention, there is provided a device having an ultraslip structure comprising the aforementioned ultraslip basic structure or a multi-stage superslip structure, further comprising a first component located below the bottommost substrate, and at the topmost A second component on the support layer of the island or island structure.

According to a fourth embodiment of the present invention, there is provided a method of fabricating an ultraslip basic structure comprising the steps of: Step 1, providing a substrate; Step 2, preparing an island structure and bringing the island structure to a substrate State; Step 3, detecting whether the island structure has an ultra-slip shear surface; Step 4, removing the island without the super-slip shear plane.

The step 2 includes: Step 2-1, sequentially covering the photoresist on the substrate; Step 2-2, patterning the photoresist to retain a plurality of photoresist islands; Step 2-3, engraving The substrate is etched to remove a portion of the substrate that is not protected by the photoresist, thereby forming a plurality of island structures.

The step 2-1 includes: sequentially covering the substrate with a protective layer and a photoresist; and the step 2-3 includes: etching the substrate to remove the protective layer and the portion not protected by the photoresist. The substrate forms a plurality of island structures.

The step 2-1 includes depositing a SiO 2 protective layer on the substrate by plasma chemical vapor deposition, and performing photoresist coating by a spin coating method; the step 2-2 includes patterning by electron beam etching The photoresist; the step 2-3 includes etching the substrate by reactive ion etching. Furthermore, the method further comprises the step of providing a support layer on the island structure.

Wherein the island-like structure is a graphite material, or the atoms in the island-shaped structural material have local possibility of inter-layer non-common contact; or the island-like structure is coated with graphite or graphene on the shear plane.

The invention breaks through the limitation of super-slip phenomenon only in the microscopic category, and can achieve super-slip of large-scale and large-slip stroke.

The additional aspects and advantages of the invention will be set forth in part in the description which follows. DRAWINGS

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from

1 is a front elevational view showing a superslip basic structure according to a first embodiment of the present invention; FIG. 2 is a plan view showing a superslip basic structure according to a first embodiment of the present invention; Schematic diagram of an island structure of an ultraslip basic structure of an embodiment when it is slipped;

4 is a schematic view showing a multi-stage superslip structure composed of side-by-side expansion modes according to a second embodiment of the present invention;

Figure 5 is a schematic view showing a multi-stage superslip structure composed of a freestanding superposition method according to a second embodiment of the present invention;

6 is a schematic view showing a multi-stage superslip structure composed of a shared superposition method according to a second embodiment of the present invention;

Figure 7 is a view showing the slippage of the island-like structure on the superslip shear plane according to the first embodiment of the present invention;

Figure 8 illustrates a schematic view of a substrate and support layer being curved or flexible material in accordance with an embodiment of the present invention;

Figure 9 is a schematic view showing the slippage of an island structure under the push of a robot arm/probe according to an embodiment of the present invention;

10-15 illustrate a method of forming an ultraslip basic structure in accordance with a fourth embodiment of the present invention. Schematic diagram of each stage. detailed description

The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative only and not to be construed as limiting. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not in itself indicate the relationship between the various embodiments and/or arrangements discussed. Moreover, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the applicability of other processes and/or the use of other materials. Additionally, the structure of the first feature described below "on" the second feature may include embodiments in which the first and second features are formed in direct contact, and may include additional features formed between the first and second features. The embodiment, such that the first and second features may not be in direct contact.

According to a first embodiment of the present invention, with reference to Figures 1-3, an ultraslip basic structure is provided, comprising a substrate 103, and a plurality of island structures 102 on the substrate, wherein each island structure has At least one super-slip shearing surface, the upper and lower contact surfaces of the super-slip shearing surface are in a non-common contact state. Fig. 3 shows the state between the upper and lower contact faces 102-1, 102-202 when the shearing surface of the island structure slips. The right side of Fig. 4 is an enlarged view of an island-like structure 102-1 in the island-like structure 102, and 102-2 is a state in which the island-like structure is slipped on the shear plane.

Preferably, the substrate is preferably graphite: for example, a highly oriented pyrolytic graphite (HOPG) substrate or natural graphite, or the internal atoms of the material of the substrate may have localized non-common contact between layers. The material of the island structure is preferably graphite: for example, a highly oriented pyrolytic graphite (HOPG) substrate or natural graphite, or the internal atoms of the material of the substrate may have localized non-common contact between layers, or The island structure is coated with graphite or graphene on the shear plane. The ultra-slip shear plane is a key factor for the structure to perform super-sliding limited motion. If the island-like structure has an incomparable contact surface, it has an ultra-slip shear plane, and when the island-like structure has multiple non- Public When the contact surface is in contact, it has a plurality of super-slip shear faces, so that the entire structure is in a super-sliding state. Preferably, the plurality of island-like structures and the substrate are a unitary structure, and may of course also be a split structure, and the island-like structure is disposed above the substrate by van der Waals adsorption or micro-adhesive technology between atoms. It has been found that even in a normal environment (non-high vacuum), a self-recovery phenomenon can occur in a graphite island having a side length of about 20 μm and a height of 200 nm to 400 nm processed by a HOPG substrate. When the graphite island is driven by the micro-mechanical arm, the stratification of the graphite island can be caused. When the micro-mechanical arm is released, the graphite island pushed out by the surface energy will automatically retract. The self-shrinking phenomenon of the graphite island is directly reflected by the ultra-slip.

Preferably, the diameter of the single island structure is 1 μm to 30 μm, and the diameter refers to a maximum distance between two points on a section in a direction parallel to the base of the island structure, and the height of the island structure is 10ηιη~10μιη The average spacing between adjacent island-like structures is 1 μm to 100 μm, and the average spacing between adjacent island-like structures is the distance between adjacent island-like structures in a direction parallel to the substrate. In general, as shown in Figure 7, at the same height, the larger the diameter of the island structure, the smaller the probability of having an incommensurate interface. Therefore, there should be a positive correlation between the diameter and height of the island structure. That is, the larger the diameter of the island structure, the deeper the etching depth, so that the island structure has a higher height. When the island structure has a higher height, the probability of its non-common contact surface is also greater.

In particular, the end of each island structure also has a protective layer 102-201. The protective layer may be SiO 2 , and the SiO 2 protective layer is deposited on the substrate by plasma chemical vapor deposition, for example, 50 nm to 500 nm, during the processing to pattern and etch the island structure. In addition, a support layer 101 of a solid material may be disposed above the island structure, as shown in FIG. 1, such as a glass flake or a metal foil, etc., and the support layer may pass van der Waals adsorption force or micro-adhesive between atoms. The technology is placed above the island structure to provide a protective support for the ultra-slip structure.

In particular, as shown in Figure 8, the substrate and support layer can be planar, curved or flexible, deformable sheet-like solid materials. The area of the upper and lower contact faces of the superslip shear plane of the island structure may be the same or different.

In addition, according to the second embodiment of the present invention, as shown in FIGS. 4-6, a multi-stage superslip structure is further provided, and the multi-stage supersliding structure includes the foregoing plurality of ultra-slip basic structures, The ultra-slip basic structure is formed by side-by-side expansion, independent superposition, shared superposition or a combination thereof. Multi-stage superslip structure.

The side-by-side extended composition manner, as shown in FIG. 4, is to distribute a plurality of the superslip basic structures side by side between a global base and a global support layer, the global base and the global support layer. a planar, curved or flexible deformable sheet-like solid material, the global substrate being attached to all of the substrates of the ultraslip basic structure, the global support layer being connected to all of the superslip basic structures Said support layer. The independent superposition composition manner, as shown in FIG. 5, is the said support layer 101, 201, 301 and the N+1th superslip basic structure of the Nth superslip basic structure The substrates 103, 203, 303 are connected. The common superposition composition manner, as shown in FIG. 6, is to simultaneously use the support layer of the Nth superslip basic structure as the substrate 103, 203 of the N+1th superslip basic structure. , 303 ο

The composite composition manner refers to a manner in which a plurality of the superslip basic structures constitute the multi-stage superslip structure, and the side-by-side extended composition manner, the independent superposition composition manner, and the shared superposition composition manner are comprehensively used. Two or three items or the same item are used multiple times. For example, three super-sliding basic structures are superimposed by a superposition superposition method to obtain a two-stage super-slip structure, and then 25 such two-stage super-sliding structures are pressed. The 5x5 array is arranged in the side-by-side extended form to obtain a three-stage superslip structure, and then 10 such three-stage super-sliding structures are superimposed into a four-stage super-sliding structure according to a common superposition structure, such a The four-stage superslip structure includes a total of 3x25x10=750 ultra-slip basic structures.

Further in accordance with a third embodiment of the present invention, there is provided a device having an ultraslip structure, further comprising a first component (not shown) located below the bottommost substrate, and at the topmost island, based on the structure A second component (not shown) on the support layer of the island or island structure. The first component and the second component may be required devices of a conventional size, such as a two-dimensional precision positioning platform, a high frequency oscillator, or the like.

The structure of the large-sized ultraslip device of the present invention and the device based thereon have been explained above in accordance with an embodiment of the present invention.

As shown in FIG. 9, when there are a plurality of super-slip shear faces on an island structure, the layer which is most easily pushed away by a plurality of super-slip shear faces under the push of a robot arm or a probe is mechanically The arm/probe pushes open, and other superslip shear faces present on the island structure may not be pushed open when a shear plane is pushed open. Therefore, when each island structure has at least one super-slip shear surface, In order to ensure that each island structure has an ultra-slip shear plane pushed away, to ensure that the first and second devices located above and below can have a relatively uniform amplitude of motion.

Preferably, each island structure has a relatively uniform size/cross-sectional area/diameter, such that the displacement of each island structure is substantially uniform, thereby maximizing the relative displacement of the first device and the second device. Of course, it is also possible to rationally arrange the size/cross-sectional area/diameter of the island-like structure so that different islands/island groups have different sizes/cross-sectional areas/diameters, or rationally arrange the spacing between the island-like structures, thereby conforming to each Different device applications.

More preferably, each of the island-like structures has more than two super-slip shear faces, so that the shear displacement accumulation of the plurality of super-slip shear faces can make the first and second components reach a larger Relative displacement. All of the above changes are within the scope of the present invention.

According to a fourth embodiment of the present invention, a method of manufacturing an ultraslip basic structure will be described in detail below. As shown in Figure 10-15, the following steps are included:

Step 1, providing a substrate 103, which may be graphite, such as a highly oriented pyrolytic graphite (HOPG) substrate or natural graphite, or the internal atoms of the substrate material may have localized non-common contact between layers. Preferably, the graphite substrate is also peeled off from the skin, such as by tape bonding to the surface of the graphite and then peeling off the tape to peel off the skin, or cutting the graphite from the side with a thin blade.

Then, in step 2, an island-like structure is prepared and the island-like structure is brought into a state of being connected to the substrate. Specifically, the method may include the following steps: Step 2-1, sequentially covering the protective layer 105 and the photoresist 104 on the substrate, the protective layer 105 may be SiO 2 , and the thickness may be, for example, 50 nm to 500 nm, and the plasma may be utilized. The SiO 2 protective layer is deposited by bulk chemical vapor deposition. The photoresist 104 can be covered by spin coating. The photoresist 104 is then patterned in step 2-2 to retain a plurality of photoresist islands 104. The step of patterning the photoresist determines the layout of the island structure formed in the subsequent step. For example, the photoresist may be patterned by an electron beam etching method, and the formed photoresist island may be, for example, an average diameter of 1μιη~30μιη, the average interval between the photoresist islands is 1μηη~100μιη, so that the etched island structure also has a corresponding average diameter and average interval. Thereafter, in step 2-3, the substrate is etched to remove the protective layer and a portion of the substrate that are not protected by the photoresist, thereby forming a plurality of island structures 102. The etching may be, for example, reactive ion etching. In general, as shown in Fig. 7, at the same height, the larger the diameter of the island structure, the smaller the probability of having an incommensurate interface, and therefore the diameter and height of the island structure. There should be a positive correlation between the two, that is, the larger the diameter of the island structure, the deeper the etching depth, so that the island structure has a higher height. When the island structure has a higher height, the probability of its non-common contact surface is also greater.

Of course, the protective layer 105 may not be covered, and the photoresist 104 may be directly coated on the substrate and etched by the island structure to form an island-like structure without a protective layer.

Step 3: detecting whether the island structure has an ultra-slip shear surface. When the island structure obtained by etching does not have an ultra-slip shear plane, it means that the island structure cannot be pushed away by the robot arm, and thus cannot be used. . It is necessary to use the robot arm to push open the island-like structure one by one, to detect whether the island-like structure has an ultra-slip shear surface, and to mark an island-like structure having no super-slip shear surface, so as to remove the island in a subsequent process.

Thereafter, in step 4, the island-like structure without the superslip shear plane is removed. The method of removing the island structure may be, for example, using reactive ion etching, or other physical chemical means.

Preferably, a support layer 101 of solid material, such as a glass flake or a metal foil, may be disposed above the island structure, and the support layer may be disposed above the island by van der Waals adsorption or micro-adhesive technology between atoms, so that Provides protective support for the ultra-slip structure.

The preparation method of the superslip basic structure described in this embodiment mainly obtains some island-like structures by micro-machining and etching the materials, and then selectively removes some island-like structures, and only retains islands having at least one super-slip shear plane. The structure is attached to the island structure and a layer of support layer is attached to form a superslip basic structure up to a larger scale. Of course, the superslip basic structure may also be formed by other means, for example, by separately forming a plurality of island-like structures by independent etching, and then connecting the island-like structures on the substrate, for example, passing the island-like structure through the van der Waals adsorption between atoms. A force or micro-adhesive technique is placed over the substrate. Or, for a general internal atom, there is no possibility of localized inhomogeneous contact between the layers, and after the island structure is prepared, graphite or graphene may be laid on the surface thereof. For example, a single crystal silicon material can be used as a substrate, and after the island structure is etched thereon, several layers of non-commonly contacted single crystal graphene are laid, and then graphene is vacuumed in a space inside the island structure. The film encloses the island structure of the single crystal silicon. Thus, although the single crystal silicon itself cannot be ultra-slip, the superslip effect can be achieved by the modification of the graphene, so that the specific embodiment of the present invention can utilize the advantages of large crystal grain size and mature process of the single crystal silicon.

After the superslip basic structure is obtained by the above preparation method, by the side-by-side extension The composition mode, the independent superimposed composition mode, the shared superimposed composition mode or the composite composition mode connects a plurality of the superslip basic structures to form the multi-stage superslip structure, and the specific connection method may be according to a specific embodiment. The dimensions are based on common glue or mechanical connections.

For example, one embodiment of the present invention is described as follows: A 200 nm thick silicon dioxide protective layer is deposited on a highly oriented pyrolytic graphite block having a cross-sectional area of 1 mm x 1 mm and a thickness of 50 μm, by electron beam exposure and reactive ion etching. The etch method etches 50x50=2500 graphite island structures on the graphite block, each island structure has a cross-sectional area of 5μηηχ5μιη, a thickness of 300nm graphite layer and a 200nm silicon dioxide protective layer, totaling 500nm, adjacent The center distance of the graphite island structure is 20 μm. The remaining height portion of the graphite block serves as a base for the ultra-wet basic structure, that is, the underlying graphite and the graphite island structure are integrated. By using the microprobe to move each of the graphite island structures, the interlaminar shear slip occurs, and then the microprobe is released to observe whether the upper layer of the slipped island structure spontaneously returns to its original position. All the graphite island structures that cannot be self-recovering are marked, and then these non-recoverable graphite island structures are etched away by photolithography, leaving only the graphite island structure capable of self-recovery. A glass sheet having a cross-sectional area of lmmxlmm and a thickness of 50 μm was taken, and epoxy resin glue was applied to one side of the glass sheet, and then adhered to the graphite island structure. Thus, an ultra-slip basic structure having a cross-sectional area of lmmxlmm and a thickness of 0.1 mm was obtained, and the slip stroke was <5 μιη.

Thus, 10x10=100 such ultra-slip basic structures are fabricated, and they are arranged in a side-by-side expansion combination into a 10x10 square array, and the center distance of the adjacent ultra-slip basic structure is 10 mm. Two pieces of PDMS (Polydimethylsiloxane, a high molecular silicone compound with optically transparent, good elasticity, non-toxic, non-flammable properties) with a cross-sectional area of 10 cm x 10 cm and a thickness of 0.5 mm were taken as the global substrate and the global cover. One side of them was coated with epoxy glue, and then two pieces of PDMS sheets were respectively attached to the upper and lower surfaces of a square array of ultra-smooth basic structures. Thus, a two-stage superslip structure having a cross-sectional area of 10 cm x 10 cm and a thickness of 1.1 mm was obtained, which had a slip stroke of <5 μm, and which was a light-transmissive, flexible and bendable sheet.

Then, 20 second-level super-slip structures are fabricated in this way, and they are superimposed in a common superposition composition, and the global cover of the first two-stage super-slip structure is simultaneously used as the global base of the second two-stage superslip structure. By analogy, a three-stage superslip structure with a cross section is obtained. The product is lOcmxlOcm, the thickness is 1.25cm, the slip stroke is <0.1111111, and it is a light-transmissive, flexible and flexible sheet.

Through the specific embodiment of the present invention described above, it can be intuitively seen that the present invention can achieve super-slip of large-scale, large-slip stroke, which will greatly overcome the limitations that the ultra-slip can only achieve at the microscopic scale.

The above described embodiments are only a few more preferred embodiments of the present invention, and the present invention is not limited to the embodiments, and other variations are also allowed. Variations that are readily conceivable by one of ordinary skill in the art in light of the scope of the appended claims are intended to be within the scope of the invention.

Further, the scope of application of the present invention is not limited to the process, mechanism, manufacture, material composition, means, methods and steps of the specific embodiments described in the specification. From the disclosure of the present invention, it will be readily understood by those skilled in the art that the processes, mechanisms, manufactures, compositions, means, methods, or steps that are presently present or later, wherein they are performed with the present invention The corresponding embodiments described are substantially identical in function or obtain substantially the same results, which can be applied in accordance with the present invention. Therefore, the appended claims are intended to cover such modifications, such structures, structures, compositions, compositions, components, methods, or steps.

Claims

Claim

What is claimed is: 1. A superslip basic structure comprising a substrate, and a plurality of island structures on the substrate, wherein each island structure has at least one superslip shear surface, upper and lower contact surfaces of the superslip shear surface In a state of non-common contact.

The structure according to claim 1, wherein the single island-like structure has a diameter of 1 μm to 30 μm and a height of 10 nm to 10 μm.

The structure according to claim 1, wherein the average spacing between adjacent island-like structures is 1 μηι to 100 μιη.

4. The structure of claim 1 wherein each island structure comprises a protective layer at an end thereof.

The structure according to claim 1, wherein the plurality of island-like structures are integrated with a substrate

6. The structure of claim 1 wherein the island structure is a graphite material.

The structure according to claim 1, wherein the internal atoms of the island-shaped structural material have a possibility of localized incompatibility between layers; or the island-like structure is coated with graphite or graphene on the shear plane.

8. The structure according to claim 1, wherein an area of the upper and lower contact faces of the superslip shear plane of the island structure may be the same or different.

9. The structure of claim 1 further comprising a support layer covering the island structure.

10. A structure according to claims 1 to 9, wherein the substrate and support layer are planar, curved or flexible deformable sheet-like solid materials.

A multi-stage superslip structure, comprising: the multi-stage superslip structure comprising the plurality of ultra-slip basic structures according to any one of claims 1 to 10, wherein the plurality of superslip basic structures are side by side The method of expanding, independent superimposing, sharing superimposing or a combination thereof forms a multi-stage superslip structure, wherein the side-by-side extended composition is to distribute a plurality of the supersliding basic structures side by side on a global base and a global support Between the layers, the global substrate and the global support layer are planar, curved or flexible deformable sheet-like solid materials, the global substrate being connected to all of the substrates of the superslip basic structure, the global a support layer connected to all of the superslip basic structures The support layer;

12. A device having an ultraslip structure, comprising the structure according to any one of claims 1 to 11, further comprising a first component located below the bottommost substrate, and a topmost island or island structure a second component on the support layer.

13. A method of manufacturing an ultraslip basic structure comprising the steps of:

Step 1, providing a substrate;

Step 2, preparing an island structure and bringing the island structure into a state of being connected to the substrate; Step 3, detecting whether the island structure has an ultra-slip shear surface;

Step 4. Remove islands that do not have an ultra-slip shear plane.

14. The method according to claim 13, wherein

The step 2 includes:

Step 2-1, sequentially covering the photoresist on the substrate;

Step 2-2, patterning the photoresist to retain a plurality of photoresist islands;

Step 2-3, etching the substrate to remove a portion of the substrate not protected by the photoresist, thereby forming a plurality of island structures.

15. The method of claim 14, wherein

The step 2-1 includes: sequentially covering the substrate with a protective layer and a photoresist; the step 2-3 includes: etching the substrate to remove the protective layer and a portion of the substrate not protected by the photoresist Thereby forming a plurality of island structures.

16. The method according to claim 15, wherein the step 2-1 comprises depositing a SiO 2 protective layer on the substrate by a plasma chemical vapor deposition method, and performing a photoresist coating by a spin coating method;

The step 2-2 includes patterning the photoresist by electron beam etching;

The step 2-3 includes etching the substrate by reactive ion etching.

17. The method of claim 13 further comprising providing support on the island structure The steps of the layer.

18. The method of claim 13, wherein the island structure is a graphite material.

The method according to claim 13, wherein the atoms in the island-like structural material have a possibility of localized in-situ non-common contact; or the island-like structure is coated with graphite or graphene on the shear plane.