Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
  • H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
  • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N60/00—Superconducting devices
  • H10N60/01—Manufacture or treatment
  • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
  • H10N60/0828—Introducing flux pinning centres
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N60/00—Superconducting devices
  • H10N60/20—Permanent superconducting devices
  • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
  • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Definitions

• Figure 9 illustrates lift factors in a magnetic field of 3 T at 30 K of 15-25 mol.% Zr- added GdYBCO tapes as a function of barium to copper ratio in the film, in accordance with an embodiment.
• the substrate may include a metal alloy that can withstand high temperatures, such as nickel-based or iron-based alloys. Examples may include Hastelloy®, Inconel® group of alloys, stainless steel alloys, or nickel-tungsten and nickel-chromium alloys.
• the substrate may typically be in the form of a thin tape, approximately 25 to 100 ⁇ thick, approximately 2 mm to 100 mm wide, and approximately 1 to 10,000 meters long.
• the substrate can be treated by techniques such as polishing to produce a smooth surface with an approximately 0.5 to 20 nm surface roughness.
• the substrate may be treated to be biaxially textured, such as by the known RABiTS (rolling assisted biaxially textured substrate) technique.
• the superconducting REBCO film may consist of a single rare-earth element such as yttrium, gadolinium, neodymium, erbium, europium, samarium, dysprosium, holmium.
• the superconducting REBCO film may consist of one or more of these rare-earth elements, in any combination.
• the superconducting film may be approximately 0.5 to 10 ⁇ thick.
• the REBCO film can be deposited via a thin film physical vapor deposition technique (e.g., pulsed laser deposition (PLD)), evaporation or sputtering, chemical vapor deposition (CVD), or chemical solution deposition (CSD).
• PLD pulsed laser deposition
• CVD chemical vapor deposition
• CSD chemical solution deposition
• the composition of the superconducting film (without the capping and stabilizer layers) can be measured via ICP spectroscopy.
• the critical current density of the superconducting tape can be measured by a four probe technique at 77 K, in a zero applied magnetic field, and in the presence of various magnetic fields at temperatures between approximately 4.2 K and 77 K.
• the in-field critical current measurement may be performed with the orientation of magnetic field parallel as well as perpendicular to the tape normal.
• the critical current density may be measured at intermediate magnetic field orientations. The lift factor at any temperature and magnetic field can be calculated as the ratio of the critical current of the tape at that condition to the critical current at 77 K in a zero applied magnetic field.
• superconducting tapes having a barium content greater than approximately 37.5 % of the total content of Ba+Cu+Zr, a copper content less than approximately 60.5 % of the total content of Ba+Cu+Zr, and a zirconium content less than approximately 2 % of the total content of Ba+Cu+Zr can exhibit a lift factor greater than approximately 3.0 in an approximately 3 T magnetic field at approximately 30 K.
• FIG. 9 illustrates the ratio of barium to copper necessary to achieve a lift factor greater than approximately 3.0 in an approximately 3 T field at approximately 30 K.
• a Ba to Cu ratio greater than or equal to at least approximately 0.58 can achieve a lift factor above 3.
• a Ba to Cu ratio greater than or equal to at least approximately 0.62 can achieve a lift factor above 4.
• the above identified correlation between critical current density and lift factor may be observed at temperatures below approximately 60 K.
• an approximately 0.85 ⁇ thick superconducting film may exhibit a critical current density of approximately 3.16 MA/cm 2 at 77 K, 0 T and at 3 T, lift factors of approximately 1.25 at 59 K, 1.57 at 54 K, 1.90 at 49 K, 2.99 at 38 K, 4.1 at 30 K, 4.64 at 25 K, and 5.67 at 20 K.
• I.75% Zr may exhibit a critical current density of approximately 3.16 MA/cm 2 at 77 K, 0 T and at 3 T, lift factors at approximately 1.25 at 59 K, 1.57 at 54 K, 1.90 at 49 K, 2.99 at 38 K, 4.1 at 30 K, 4.64 at 25 K, and 5.67 at 20 K.
• the critical current of tape 1 may be approximately 1346 A/12 mm at approximately 30 K and approximately 3 T.
• the critical current of tape 2 may be approximately 1751 A/12 mm at approximately 30 K and approximately 3 T.
• the critical current of tape 3 may be approximately 1661A/12 mm at approximately 30 K and approximately 3 T.
• the critical current of tape 4 may be approximately 1297 A/12 mm at approximately 30 K and approximately 3 T.
• the critical current of tape 5 may be approximately 1413 A/ 12 mm at approximately 30 K and approximately 3 T.
• the critical current of tape 6 may be approximately 2160 A/12 mm at approximately 30 K and approximately 3 T.
• Hastelloy C-276 tape with alumina and yttria buffer layers was coated with MgO by ion beam assisted deposition (IBAD) at room temperature to yield biaxially-textured film.
• IBAD ion beam assisted deposition
• Homo-epitaxial MgO and LaMnC>3 were deposited on the IBAD MgO layer by magnetron sputtering in a temperature range of 600 to 800°C.
• the buffered tape was used for MOCVD of GdYBCO film with Zr addition. Tetramethyl heptanedionate precursors with a cation composition of Zr 0 .i5Gdo.

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• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Superconductors And Manufacturing Methods Therefor (AREA)
• Inorganic Compounds Of Heavy Metals (AREA)
• Chemical Vapour Deposition (AREA)
• Superconductor Devices And Manufacturing Methods Thereof (AREA)

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• 2014
  • 2014-04-01 WO PCT/US2014/032560 patent/WO2014209458A1/en not_active Ceased
  • 2014-04-01 JP JP2016505620A patent/JP6104455B2/ja active Active
  • 2014-04-01 US US14/242,587 patent/US10818416B2/en active Active
• 2017
  • 2017-02-13 JP JP2017023829A patent/JP2017084829A/ja active Pending
• 2020
  • 2020-10-19 US US17/074,223 patent/US11488746B2/en active Active

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