WO2014207599A1 - Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del - Google Patents
Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del Download PDFInfo
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- WO2014207599A1 WO2014207599A1 PCT/IB2014/062207 IB2014062207W WO2014207599A1 WO 2014207599 A1 WO2014207599 A1 WO 2014207599A1 IB 2014062207 W IB2014062207 W IB 2014062207W WO 2014207599 A1 WO2014207599 A1 WO 2014207599A1
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- WIPO (PCT)
- Prior art keywords
- layer
- substrate
- film
- releasable
- light emitting
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 title abstract description 58
- 239000010409 thin film Substances 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000012546 transfer Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 18
- 229920001296 polysiloxane Polymers 0.000 claims description 17
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 229920000867 polyelectrolyte Polymers 0.000 claims description 6
- 239000012855 volatile organic compound Substances 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 abstract description 5
- 230000005661 hydrophobic surface Effects 0.000 abstract description 5
- 229920000642 polymer Polymers 0.000 abstract description 4
- 238000005266 casting Methods 0.000 abstract description 3
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 239000012071 phase Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 77
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000005660 hydrophilic surface Effects 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 210000002381 plasma Anatomy 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- -1 poly ethylene terephthalate Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004904 UV filter Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 238000000707 layer-by-layer assembly Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
Definitions
- This invention relates to the field of light emitting devices, and in particular to the transfer of optical thin films and barrier films to a light emitting structure during the manufacture of the light emitting devices.
- Light emitting devices are often composed of multiple functional elements, such as a light emitting element, a wavelength conversion element, an optical element, a protective element, and so on. These elements may be formed by applying a coating upon a formed structure, laminating a pre-formed film upon the structure, adhering a preformed cap upon the structure, encapsulating the structure, and so on.
- Optical elements such as distributed Bragg reflectors (DBRs) are often used to control the emission pattern or directionality of the light from the light emitting element, to achieve a desired color angular distribution, to enhance certain color distributions or to remove certain spectral content, as in a UV filter.
- DBR distributed Bragg reflectors
- a DBR is a film formed from multiple layers of alternating materials with varying refractive indices, or by periodic variation of some characteristic (such as height) of a dielectric waveguide, resulting in periodic variation in the effective refractive index in the guide.
- Each layer boundary causes a partial reflection of an optical wave and the many reflections combine with constructive interference to act as a high-quality reflector.
- Other optical elements, such as anti- reflection (AR) films may also be formed using multiple layers of material.
- the layers of the DBR or AR film may be formed by vacuum deposition and by a layer-by-layer (LBL) spraying technique. It is difficult and/or expensive to coat uniform, conformal, optical films directly on planar and non-planar surfaces, and/or over low modulus materials and/or materials with large coefficient of thermal expansion (CTE), such as silicones.
- CTE coefficient of thermal expansion
- vacuum deposition technologies are "directional" and do not conform well to non-planar substrates, especially with steep or undercutting features.
- vacuum deposited coatings may exhibit undesirable stresses and low adhesion, resulting in brittle and unreliable coatings.
- a layer-by-layer film such as a distributed Bragg reflector, an anti-reflection coating, a color filter, a barrier coat, etc. is formed on a substrate, then transferred to the surface of an underlying structure and released from the substrate.
- the substrate may be modified by casting a releasable film containing charged functional groups, or non-charged ones, but capable of generating charged groups by gas-phase reaction (CVD, plasmas, corona discharge, ozone) or liquid-phase reactions (such as hydrolysis) after coating.
- the substrate may be provided with a sacrificial layer, such as a UV and thermal release tape.
- the creation of a pre-formed layer-by-layer film on a releasable substrate may be controlled to provide flexible optical films of uniform thickness and high quality.
- FIGs. lA-lF illustrate an example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
- FIGs. 2A-2D illustrate a second example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
- FIGs. 3A-3C illustrate a third example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
- LBL Layer-by-layer
- the deposition of each layer of an LBL film is a process in which poly electrolytes and nanoparticles are electrostatically adsorbed onto oppositely charged substrate surfaces.
- the initial deposition of the polymers or nanoparticles reverses the substrate surface charge, effectively quenching further adsorption, thereby automatically controlling the thickness of the formed layer.
- the process rapidly alternates between oppositely charged solutions or suspensions to create each subsequent layer.
- Other materials may be used to form the layers, including metals, ceramics, and biological molecules
- the LBL approach may also be used to form barrier coats that protect the underlying structure, generally to prevent or minimize the diffusion of compounds that could interfere with LED longevity, such as color stability, substrate reflectivity, and device efficiency.
- the LBL film may provide a vapor barrier layer, an oxygen barrier layer, or a barrier to volatile organic compounds (VOCs).
- the first layer of the LBL film may be formed by charging the surface of the underlying structure, such as the surface of the light emitting element, then spraying an oppositely charged layer of the material forming the first layer. Thereafter, the subsequent layers are formed upon each prior applied layer, alternating the charge of each layer. Because the first layer is electrostatically adsorbed on the surface of the underlying structure, the bond between the LBL film and the underlying structure is generally secure and optically efficient. If the LBL films contain chemically functional groups, the bonds with the substrate and adjacent layers can be further strengthen by the formation of covalent bonds.
- LBL deposition directly on LED devices may introduce an inefficiency in the conventional fabrication flow for creating light emitting devices.
- coating at or near the end of the fabrication process may lead to undesirably low yields, particularly if the coating occurs before the testing of the light emitting structures, or if the coating process does not provide uniform, conformal optical films.
- the upper surface of the LED device may not be compatible with the LBL deposition process, precluding its use for such devices.
- a wavelength conversion element is commonly used within an LED device, and is often formed as a phosphor-embedded silicone layer atop the light emitting surface of the LED device. This silicone layer may be hydrophobic, whereas the LBL deposition process cannot be applied to a hydrophobic surface.
- the use of a pre-formed layer-by-layer (LBL) film on a releasable substrate can be expected to simplify the process of creating an LBL film on the surface of a light emitting device. It may also provide for a higher quality LBL film, in that the thickness, uniformity, and quality of the LBL film may be controlled in a process that is substantially independent of the creation of the light emitting device. Non-conformal films can be discarded, avoiding the creation of a light emitting device with a non-conformal LBL film, resulting in a higher yield. Additionally, because the LBL films are produced independent of the fabrication of the light emitting devices, the manufacture of these films may achieve an economy-of-scale and other optimizations that are not achievable with LBL films that are created directly upon the light emitting device.
- LBL layer-by-layer
- LBL films are releasable substrates that are compatible with the LBL process.
- the deposition of LBL films is a process in which polyelectrolytes and
- nanoparticles are electrostatically adsorbed onto oppositely charged substrate surfaces. Because electrostatic self-assembly drives this process, the initial substrate requires charged moieties; accordingly, LBL films cannot be grown on hydrophobic surfaces, such as siliconized release films and perfluorinated release polymers (such as ETFE).
- a treated silicone sheet such as a treated silicone sheet
- Polydimethylsioxane (PDMS)-coated Polyester sheet such as poly ethylene terephthalate or PET, may be used as a substrate.
- PDMS Polydimethylsioxane
- the surface of the sheet is further modified by coating a releasable film that may contain anionic or cationic groups, or a film that can be treated with a corona discharge, ozone or plasmas in order to generate anionic groups on its surface, to provide a hydrophilic (non -hydrophobic) surface layer above the hydrophobic surface.
- a sacrificial surface layer is placed on the substrate, such as a Polyethylene terpthalate (PET) substrate.
- PET Polyethylene terpthalate
- the sacrificial surface may be, for example, an adhesive tape that becomes releasable upon the application of UV or thermal energy, including Nitto Denko's Revalpha thermal release tape,
- Furukawa's UV wafer dicing tape and Terepac's Digital Release Adhesive (DRA) that releases upon application of light and heat.
- DPA Digital Release Adhesive
- FIGs. lA-lF illustrate an example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
- FIG. 1 A illustrates an example sheet 100 comprising a substrate 110 with a coating 120 that provides a hydrophilic surface.
- the coating 120 may comprise anionic or cationic groups, or the coating 120 may be a sacrificial surface layer.
- the coating 120 may be the aforementioned Revalpha thermal release tape placed upon a silicone or other flexible substrate 110.
- Shin Etsu PLF-100 or Dow Corning LF-1000 may be applied as a thin coats (-50 um) on top of a releasable liner (siliconized PET) situated on the substrate 110.
- Shin Etsu PLF-100 and Dow Corning LF-1000 are solvent-based silicone-backbone phenylated resins that may be cured or partially cured (crosslink) after coating to achieve mechanical stability and support.
- UV-curable resins, such as UV- silicones may also be used.
- top surface of these films may be "activated" by plasma (02, CH3-OH, etc.) corona discharge or UV-ozone, and/or grafted (in liquid or gas phase) with functional reagents such as trimethoxy aminopropyl silane, creating a hydrophilic surface as a 'primer' to facilitate LBL deposition.
- an LBL layer 130 may be formed by spraying the material forming the layers onto the hydrophilic coating 120, creating the sheet 101.
- the LBL layer 130 may be, for example, a Bragg reflector, a filter, an anti -reflection layer, a barrier layer, and so on.
- an optional wavelength conversion layer 140 may be formed above the LBL layer.
- a slurry of silicone containing one or more phosphors may be formed atop the LBL layer 130, then dried and partially cured (B-stage) to form a sheet 102.
- the thickness of the layer 140 may be controlled by passing the sheet 100 through a pair of rollers, applying a press plate, and so on.
- a releasable protective sheet may be used to cover the partially cured silicone.
- the wavelength conversion layer 140 may also be preformed and adhered to the pre-formed LBL layer 130.
- the preformed wavelength conversion layer 140 may be partially cured, such that its surface is tacky, providing the adhesion to the LBL layer 130.
- silicone surface of the wavelength conversion layer 140 is incompatible with the LBL process, because silicone is hydrophobic, the fact that the LBL layer 130 is already formed, and no longer requires a hydrophilic surface, allows for this combination of an LBL layer 130 and a silicone-based wavelength conversion layer 140.
- the sheet 102 comprises a wavelength conversion material 140 with an LBL film 130, formed above the coated substrate 110, 120. Assuming that the coated substrate 110, 120 is transparent, this sheet 102 may be tested for quality and uniformity, with defective sheets being discarded. The sheet 102 may also be tested for its wavelength conversion characteristics, and 'binned' based on the wavelength of the emitted color, for matching with similarly 'binned' light emitting devices to provide a desired combined color output, as detailed in U.S. Patent 7,344,952, "Laminating Encapsulant Film Containing Phosphor Over LEDs", issued 3 July 2008 to Haryanto Chandra, and incorporated by reference herein.
- the coated substrate 110, 120 need not be transparent, and the sheet 102 may be tested by directing light toward the surface that is opposite the coated substrate 110, 120, and measuring the reflectance.
- the sheet 102 may be sliced/diced along lines 180 to provide 'singulated' elements 103 that may be attached to a light emitting structure 160, as illustrated in FIG. ID.
- the sheet 102 may be applied to a plurality of light emitting structures on a tile, or other mount, then singulated when the tile is sliced/diced. If a protective sheet had been used to cover the semi-cured layer 140, it may be removed, exposing a surface of the layer 140.
- light emitting structure 160 is illustrated as containing a light emitting element 150 enclosed by a protective outer shell 155 in one plane, exposing a light emitting surface and an electrical connection surface.
- the light emitting structure 160 may take other forms, including a self- supporting light emitting element 150 without an outer shell 155.
- the light emitting element 150 may comprise (not illustrated) an active layer sandwiched between an n-type and p-type semiconductor.
- the layer 140 Because the layer 140 is semi-cured, it adheres to the light emitting surface of light emitting structure 160. Subsequent curing then bonds the layer 140 to the light emitting structure 160, forming a light emitting structure 104, as illustrated in FIG. IE. If the layer 140 had been provided as a pre-formed sheet that is attached to the pre-formed LBL 130, this subsequent curing also bonds the layer 140 to the LBL 130.
- the coated substrate 110, 120 is removed, leaving the LBL layer 130 of the light emitting device 105 exposed. If the coating 120 is a UV, heat, or light activated material, the appropriate UV, heat, and/or light energy is applied to release the coated substrate 110, 120 from the LBL layer 130 exposing a surface 135 of the LBL layer 130.
- the coating layer 120 may be removed even in a reflector configuration, to provide optical and/or mechanical properties that are compatible with the particular application.
- the light emitting device 105 includes an LBL layer 130 atop a silicone-based wavelength conversion layer 140.
- an in-situ creation of an LBL layer 130 upon a surface would preclude the use of a silicone-based wavelength conversion layer 140, and require the use of a different material to form the wavelength conversion layer, which generally increases the cost and complexity of the manufacturing process.
- tested singulated element 103 may be applied only to tested light emitting structures 160, thereby increasing the efficiency and yield of the process.
- the process for creating the LBL layer 130 is independent of the process for creating the structure 160, allowing each of these processes to be optimized independently, which typically will reduce the cost of each of these elements 130, 160. Additionally, the LBL that is independently formed may be designed to provide improved reliability, such that it will function even if cracks or other defects are created during processing.
- FIGs. 2A-2D illustrate a second example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
- FIG. 2A illustrates a sheet 101 comprising an LBL film 130 upon a substrate 110 with a hydrophilic coating 120, as detailed above with regard to FIGs. 1 A-1B.
- FIG. 2B illustrates a plurality of light emitting structures 160 with a wavelength conversion layer 140 being placed upon the sheet 101.
- the wavelength conversion layer may include a semi-cured silicone material that facilitates adherence to the LBL film 130 when the silicone material is cured.
- an adhesive layer may connect the layer 140 to the film 130.
- FIG. 2C illustrates a resultant light emitting structure 204 after singulation
- FIG. 2D illustrates the light emitting device 205 after removal of the coated substrate 110, 120. If the coating 120 is a UV, heat, or light activated material, the appropriate UV, heat, and/or light energy is applied to release the coated substrate 110, 120 from the LBL layer 130.
- FIGs. 3A-3C illustrate a third example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
- the LBL film comprises a reflector that will surround each light emitting element.
- the LBL film 330 may be patterned on the coated substrate 110, 120 so as to produce gaps 335 in the film 330.
- the pattern may be produced in a UV or thermal activated tape 120 before it is applied to the substrate 110.
- an unpatterned LBL film 330 may be formed on the tape 120, and the pattern formed by selectively removing portions of the LBL-covered tape 120, or portions of the LBL film 330 on the tape 120, after it is on the substrate 110, for example, by photosensitive etching or similar process.
- Light emitting elements 150 are placed in each gap, such that the reflective LBL film 330 surrounds each light emitting element 150, as illustrated in FIG. 3B. Thereafter, an optical element 310 may be formed over each light emitting element 150 and a portion of surrounding reflective LBL film 330.
- the optical element 310 is illustrated as a hemispherical dome, although one of skill in the art will recognize that other shapes may also be formed.
- the optical element 310 may include wavelength conversion material, or a separate wavelength conversion element (not illustrated) may be situated upon the light emitting element 150.
- FIG. 3C illustrates a singulated light emitting device 305 after removal of the coated substrate 110, 120, using the removal techniques detailed above.
- the removal of the coated substrate 110, 120 may be performed before or after singulation.
- the singulation of the devices 105, 205, 305 occurs while the devices 105, 205, 305 are on the coated substrate 110, 120, but the singulation method (e.g. laser slicing/dicing) does not extend into the substrate 110, allowing the substrate 110 to be reused.
- the singulation method e.g. laser slicing/dicing
- the underlying structure is not a light emitting structure.
- the underlying structure may include a photosensitive receiver.
- the LBL layer need not be an optical element, as in the case of an LBL barrier layer that protects the underlying structure from external elements, such as vapor, oxygen, and VOCs.
- the underlying device may not be a light emitting or light receiving device.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
La présente invention concerne un film couche par couche - tel qu'un réflecteur de Bragg distribué, un revêtement antireflet, un filtre coloré, une couche isolante et autres - qui est formé sur un substrat (110), puis transféré sur la surface d'une structure sous-jacente et détaché du substrat (110). Étant donné que le processus couche par couche permettant de produire le film couche par couche ne peut pas être utilisé sur une surface hydrophobe, telle qu'un substrat siliconé couramment utilisé en tant que film de libération, ou sur des polymères de libération perfluorés, tels que l'ETFE, le substrat (110) peut être modifié par coulage d'un film détachable contenant des groupes fonctionnels chargés ou des groupes fonctionnels non chargés qui sont aptes à générer des groupes fonctionnels chargés par réaction en phase gazeuse ou en phase liquide après le coulage sur ledit substrat (110). En variante, le substrat (110) peut être pourvu d'une couche sacrificielle, telle qu'une bande de libération sensible à la chaleur ou aux UV. La création d'un film couche par couche préformé sur un substrat détachable peut être commandée pour produire des films optiques minces et souples d'une épaisseur uniforme et d'une haute qualité pour des dispositifs électroluminescents (105, 205, 305).
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201361838445P | 2013-06-24 | 2013-06-24 | |
US61/838,445 | 2013-06-24 | ||
US201461925727P | 2014-01-10 | 2014-01-10 | |
US61/925,727 | 2014-01-10 |
Publications (1)
Publication Number | Publication Date |
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WO2014207599A1 true WO2014207599A1 (fr) | 2014-12-31 |
Family
ID=51136529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/IB2014/062207 WO2014207599A1 (fr) | 2013-06-24 | 2014-06-13 | Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del |
Country Status (2)
Country | Link |
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TW (1) | TW201507213A (fr) |
WO (1) | WO2014207599A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019010001A1 (fr) * | 2017-07-06 | 2019-01-10 | Ares Materials Inc. | Procédé de formation de films de lentilles de recouvrement flexibles |
EP3111487B1 (fr) * | 2014-02-27 | 2020-03-11 | Lumileds Holding B.V. | Procédé de formation d'un dispositif électroluminescent à longueur d'onde convertie |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07225302A (ja) * | 1993-12-02 | 1995-08-22 | Dainippon Printing Co Ltd | 機能性超微粒子を含む透明機能性膜、透明機能性フィルム及びその製造方法 |
US20020160166A1 (en) * | 2000-04-17 | 2002-10-31 | Hideshi Hattori | Antireflection film and method for manufacturing the same |
US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
US20110114969A1 (en) * | 2009-11-13 | 2011-05-19 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
JP2012086476A (ja) * | 2010-10-20 | 2012-05-10 | Hitachi Chemical Co Ltd | 薄膜転写材及びその製造方法並びに薄膜付き成形体及びその製造方法 |
-
2014
- 2014-06-13 WO PCT/IB2014/062207 patent/WO2014207599A1/fr active Application Filing
- 2014-06-24 TW TW103121678A patent/TW201507213A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07225302A (ja) * | 1993-12-02 | 1995-08-22 | Dainippon Printing Co Ltd | 機能性超微粒子を含む透明機能性膜、透明機能性フィルム及びその製造方法 |
US20020160166A1 (en) * | 2000-04-17 | 2002-10-31 | Hideshi Hattori | Antireflection film and method for manufacturing the same |
US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
US20110114969A1 (en) * | 2009-11-13 | 2011-05-19 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
JP2012086476A (ja) * | 2010-10-20 | 2012-05-10 | Hitachi Chemical Co Ltd | 薄膜転写材及びその製造方法並びに薄膜付き成形体及びその製造方法 |
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EP3111487B1 (fr) * | 2014-02-27 | 2020-03-11 | Lumileds Holding B.V. | Procédé de formation d'un dispositif électroluminescent à longueur d'onde convertie |
WO2019010001A1 (fr) * | 2017-07-06 | 2019-01-10 | Ares Materials Inc. | Procédé de formation de films de lentilles de recouvrement flexibles |
US11667111B2 (en) | 2017-07-06 | 2023-06-06 | Ares Materials Inc. | Method for forming flexible cover lens films |
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