WO2014207599A1 - Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del - Google Patents

Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del Download PDF

Info

Publication number
WO2014207599A1
WO2014207599A1 PCT/IB2014/062207 IB2014062207W WO2014207599A1 WO 2014207599 A1 WO2014207599 A1 WO 2014207599A1 IB 2014062207 W IB2014062207 W IB 2014062207W WO 2014207599 A1 WO2014207599 A1 WO 2014207599A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
film
releasable
light emitting
Prior art date
Application number
PCT/IB2014/062207
Other languages
English (en)
Inventor
Daniel Roitman
Kenneth VAMPOLA
Original Assignee
Koninklijke Philips N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips N.V. filed Critical Koninklijke Philips N.V.
Publication of WO2014207599A1 publication Critical patent/WO2014207599A1/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0025Processes relating to coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder

Definitions

  • This invention relates to the field of light emitting devices, and in particular to the transfer of optical thin films and barrier films to a light emitting structure during the manufacture of the light emitting devices.
  • Light emitting devices are often composed of multiple functional elements, such as a light emitting element, a wavelength conversion element, an optical element, a protective element, and so on. These elements may be formed by applying a coating upon a formed structure, laminating a pre-formed film upon the structure, adhering a preformed cap upon the structure, encapsulating the structure, and so on.
  • Optical elements such as distributed Bragg reflectors (DBRs) are often used to control the emission pattern or directionality of the light from the light emitting element, to achieve a desired color angular distribution, to enhance certain color distributions or to remove certain spectral content, as in a UV filter.
  • DBR distributed Bragg reflectors
  • a DBR is a film formed from multiple layers of alternating materials with varying refractive indices, or by periodic variation of some characteristic (such as height) of a dielectric waveguide, resulting in periodic variation in the effective refractive index in the guide.
  • Each layer boundary causes a partial reflection of an optical wave and the many reflections combine with constructive interference to act as a high-quality reflector.
  • Other optical elements, such as anti- reflection (AR) films may also be formed using multiple layers of material.
  • the layers of the DBR or AR film may be formed by vacuum deposition and by a layer-by-layer (LBL) spraying technique. It is difficult and/or expensive to coat uniform, conformal, optical films directly on planar and non-planar surfaces, and/or over low modulus materials and/or materials with large coefficient of thermal expansion (CTE), such as silicones.
  • CTE coefficient of thermal expansion
  • vacuum deposition technologies are "directional" and do not conform well to non-planar substrates, especially with steep or undercutting features.
  • vacuum deposited coatings may exhibit undesirable stresses and low adhesion, resulting in brittle and unreliable coatings.
  • a layer-by-layer film such as a distributed Bragg reflector, an anti-reflection coating, a color filter, a barrier coat, etc. is formed on a substrate, then transferred to the surface of an underlying structure and released from the substrate.
  • the substrate may be modified by casting a releasable film containing charged functional groups, or non-charged ones, but capable of generating charged groups by gas-phase reaction (CVD, plasmas, corona discharge, ozone) or liquid-phase reactions (such as hydrolysis) after coating.
  • the substrate may be provided with a sacrificial layer, such as a UV and thermal release tape.
  • the creation of a pre-formed layer-by-layer film on a releasable substrate may be controlled to provide flexible optical films of uniform thickness and high quality.
  • FIGs. lA-lF illustrate an example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
  • FIGs. 2A-2D illustrate a second example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
  • FIGs. 3A-3C illustrate a third example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
  • LBL Layer-by-layer
  • the deposition of each layer of an LBL film is a process in which poly electrolytes and nanoparticles are electrostatically adsorbed onto oppositely charged substrate surfaces.
  • the initial deposition of the polymers or nanoparticles reverses the substrate surface charge, effectively quenching further adsorption, thereby automatically controlling the thickness of the formed layer.
  • the process rapidly alternates between oppositely charged solutions or suspensions to create each subsequent layer.
  • Other materials may be used to form the layers, including metals, ceramics, and biological molecules
  • the LBL approach may also be used to form barrier coats that protect the underlying structure, generally to prevent or minimize the diffusion of compounds that could interfere with LED longevity, such as color stability, substrate reflectivity, and device efficiency.
  • the LBL film may provide a vapor barrier layer, an oxygen barrier layer, or a barrier to volatile organic compounds (VOCs).
  • the first layer of the LBL film may be formed by charging the surface of the underlying structure, such as the surface of the light emitting element, then spraying an oppositely charged layer of the material forming the first layer. Thereafter, the subsequent layers are formed upon each prior applied layer, alternating the charge of each layer. Because the first layer is electrostatically adsorbed on the surface of the underlying structure, the bond between the LBL film and the underlying structure is generally secure and optically efficient. If the LBL films contain chemically functional groups, the bonds with the substrate and adjacent layers can be further strengthen by the formation of covalent bonds.
  • LBL deposition directly on LED devices may introduce an inefficiency in the conventional fabrication flow for creating light emitting devices.
  • coating at or near the end of the fabrication process may lead to undesirably low yields, particularly if the coating occurs before the testing of the light emitting structures, or if the coating process does not provide uniform, conformal optical films.
  • the upper surface of the LED device may not be compatible with the LBL deposition process, precluding its use for such devices.
  • a wavelength conversion element is commonly used within an LED device, and is often formed as a phosphor-embedded silicone layer atop the light emitting surface of the LED device. This silicone layer may be hydrophobic, whereas the LBL deposition process cannot be applied to a hydrophobic surface.
  • the use of a pre-formed layer-by-layer (LBL) film on a releasable substrate can be expected to simplify the process of creating an LBL film on the surface of a light emitting device. It may also provide for a higher quality LBL film, in that the thickness, uniformity, and quality of the LBL film may be controlled in a process that is substantially independent of the creation of the light emitting device. Non-conformal films can be discarded, avoiding the creation of a light emitting device with a non-conformal LBL film, resulting in a higher yield. Additionally, because the LBL films are produced independent of the fabrication of the light emitting devices, the manufacture of these films may achieve an economy-of-scale and other optimizations that are not achievable with LBL films that are created directly upon the light emitting device.
  • LBL layer-by-layer
  • LBL films are releasable substrates that are compatible with the LBL process.
  • the deposition of LBL films is a process in which polyelectrolytes and
  • nanoparticles are electrostatically adsorbed onto oppositely charged substrate surfaces. Because electrostatic self-assembly drives this process, the initial substrate requires charged moieties; accordingly, LBL films cannot be grown on hydrophobic surfaces, such as siliconized release films and perfluorinated release polymers (such as ETFE).
  • a treated silicone sheet such as a treated silicone sheet
  • Polydimethylsioxane (PDMS)-coated Polyester sheet such as poly ethylene terephthalate or PET, may be used as a substrate.
  • PDMS Polydimethylsioxane
  • the surface of the sheet is further modified by coating a releasable film that may contain anionic or cationic groups, or a film that can be treated with a corona discharge, ozone or plasmas in order to generate anionic groups on its surface, to provide a hydrophilic (non -hydrophobic) surface layer above the hydrophobic surface.
  • a sacrificial surface layer is placed on the substrate, such as a Polyethylene terpthalate (PET) substrate.
  • PET Polyethylene terpthalate
  • the sacrificial surface may be, for example, an adhesive tape that becomes releasable upon the application of UV or thermal energy, including Nitto Denko's Revalpha thermal release tape,
  • Furukawa's UV wafer dicing tape and Terepac's Digital Release Adhesive (DRA) that releases upon application of light and heat.
  • DPA Digital Release Adhesive
  • FIGs. lA-lF illustrate an example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
  • FIG. 1 A illustrates an example sheet 100 comprising a substrate 110 with a coating 120 that provides a hydrophilic surface.
  • the coating 120 may comprise anionic or cationic groups, or the coating 120 may be a sacrificial surface layer.
  • the coating 120 may be the aforementioned Revalpha thermal release tape placed upon a silicone or other flexible substrate 110.
  • Shin Etsu PLF-100 or Dow Corning LF-1000 may be applied as a thin coats (-50 um) on top of a releasable liner (siliconized PET) situated on the substrate 110.
  • Shin Etsu PLF-100 and Dow Corning LF-1000 are solvent-based silicone-backbone phenylated resins that may be cured or partially cured (crosslink) after coating to achieve mechanical stability and support.
  • UV-curable resins, such as UV- silicones may also be used.
  • top surface of these films may be "activated" by plasma (02, CH3-OH, etc.) corona discharge or UV-ozone, and/or grafted (in liquid or gas phase) with functional reagents such as trimethoxy aminopropyl silane, creating a hydrophilic surface as a 'primer' to facilitate LBL deposition.
  • an LBL layer 130 may be formed by spraying the material forming the layers onto the hydrophilic coating 120, creating the sheet 101.
  • the LBL layer 130 may be, for example, a Bragg reflector, a filter, an anti -reflection layer, a barrier layer, and so on.
  • an optional wavelength conversion layer 140 may be formed above the LBL layer.
  • a slurry of silicone containing one or more phosphors may be formed atop the LBL layer 130, then dried and partially cured (B-stage) to form a sheet 102.
  • the thickness of the layer 140 may be controlled by passing the sheet 100 through a pair of rollers, applying a press plate, and so on.
  • a releasable protective sheet may be used to cover the partially cured silicone.
  • the wavelength conversion layer 140 may also be preformed and adhered to the pre-formed LBL layer 130.
  • the preformed wavelength conversion layer 140 may be partially cured, such that its surface is tacky, providing the adhesion to the LBL layer 130.
  • silicone surface of the wavelength conversion layer 140 is incompatible with the LBL process, because silicone is hydrophobic, the fact that the LBL layer 130 is already formed, and no longer requires a hydrophilic surface, allows for this combination of an LBL layer 130 and a silicone-based wavelength conversion layer 140.
  • the sheet 102 comprises a wavelength conversion material 140 with an LBL film 130, formed above the coated substrate 110, 120. Assuming that the coated substrate 110, 120 is transparent, this sheet 102 may be tested for quality and uniformity, with defective sheets being discarded. The sheet 102 may also be tested for its wavelength conversion characteristics, and 'binned' based on the wavelength of the emitted color, for matching with similarly 'binned' light emitting devices to provide a desired combined color output, as detailed in U.S. Patent 7,344,952, "Laminating Encapsulant Film Containing Phosphor Over LEDs", issued 3 July 2008 to Haryanto Chandra, and incorporated by reference herein.
  • the coated substrate 110, 120 need not be transparent, and the sheet 102 may be tested by directing light toward the surface that is opposite the coated substrate 110, 120, and measuring the reflectance.
  • the sheet 102 may be sliced/diced along lines 180 to provide 'singulated' elements 103 that may be attached to a light emitting structure 160, as illustrated in FIG. ID.
  • the sheet 102 may be applied to a plurality of light emitting structures on a tile, or other mount, then singulated when the tile is sliced/diced. If a protective sheet had been used to cover the semi-cured layer 140, it may be removed, exposing a surface of the layer 140.
  • light emitting structure 160 is illustrated as containing a light emitting element 150 enclosed by a protective outer shell 155 in one plane, exposing a light emitting surface and an electrical connection surface.
  • the light emitting structure 160 may take other forms, including a self- supporting light emitting element 150 without an outer shell 155.
  • the light emitting element 150 may comprise (not illustrated) an active layer sandwiched between an n-type and p-type semiconductor.
  • the layer 140 Because the layer 140 is semi-cured, it adheres to the light emitting surface of light emitting structure 160. Subsequent curing then bonds the layer 140 to the light emitting structure 160, forming a light emitting structure 104, as illustrated in FIG. IE. If the layer 140 had been provided as a pre-formed sheet that is attached to the pre-formed LBL 130, this subsequent curing also bonds the layer 140 to the LBL 130.
  • the coated substrate 110, 120 is removed, leaving the LBL layer 130 of the light emitting device 105 exposed. If the coating 120 is a UV, heat, or light activated material, the appropriate UV, heat, and/or light energy is applied to release the coated substrate 110, 120 from the LBL layer 130 exposing a surface 135 of the LBL layer 130.
  • the coating layer 120 may be removed even in a reflector configuration, to provide optical and/or mechanical properties that are compatible with the particular application.
  • the light emitting device 105 includes an LBL layer 130 atop a silicone-based wavelength conversion layer 140.
  • an in-situ creation of an LBL layer 130 upon a surface would preclude the use of a silicone-based wavelength conversion layer 140, and require the use of a different material to form the wavelength conversion layer, which generally increases the cost and complexity of the manufacturing process.
  • tested singulated element 103 may be applied only to tested light emitting structures 160, thereby increasing the efficiency and yield of the process.
  • the process for creating the LBL layer 130 is independent of the process for creating the structure 160, allowing each of these processes to be optimized independently, which typically will reduce the cost of each of these elements 130, 160. Additionally, the LBL that is independently formed may be designed to provide improved reliability, such that it will function even if cracks or other defects are created during processing.
  • FIGs. 2A-2D illustrate a second example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
  • FIG. 2A illustrates a sheet 101 comprising an LBL film 130 upon a substrate 110 with a hydrophilic coating 120, as detailed above with regard to FIGs. 1 A-1B.
  • FIG. 2B illustrates a plurality of light emitting structures 160 with a wavelength conversion layer 140 being placed upon the sheet 101.
  • the wavelength conversion layer may include a semi-cured silicone material that facilitates adherence to the LBL film 130 when the silicone material is cured.
  • an adhesive layer may connect the layer 140 to the film 130.
  • FIG. 2C illustrates a resultant light emitting structure 204 after singulation
  • FIG. 2D illustrates the light emitting device 205 after removal of the coated substrate 110, 120. If the coating 120 is a UV, heat, or light activated material, the appropriate UV, heat, and/or light energy is applied to release the coated substrate 110, 120 from the LBL layer 130.
  • FIGs. 3A-3C illustrate a third example process flow for forming a light emitting device with a pre-formed layer-by-layer film on a releasable substrate.
  • the LBL film comprises a reflector that will surround each light emitting element.
  • the LBL film 330 may be patterned on the coated substrate 110, 120 so as to produce gaps 335 in the film 330.
  • the pattern may be produced in a UV or thermal activated tape 120 before it is applied to the substrate 110.
  • an unpatterned LBL film 330 may be formed on the tape 120, and the pattern formed by selectively removing portions of the LBL-covered tape 120, or portions of the LBL film 330 on the tape 120, after it is on the substrate 110, for example, by photosensitive etching or similar process.
  • Light emitting elements 150 are placed in each gap, such that the reflective LBL film 330 surrounds each light emitting element 150, as illustrated in FIG. 3B. Thereafter, an optical element 310 may be formed over each light emitting element 150 and a portion of surrounding reflective LBL film 330.
  • the optical element 310 is illustrated as a hemispherical dome, although one of skill in the art will recognize that other shapes may also be formed.
  • the optical element 310 may include wavelength conversion material, or a separate wavelength conversion element (not illustrated) may be situated upon the light emitting element 150.
  • FIG. 3C illustrates a singulated light emitting device 305 after removal of the coated substrate 110, 120, using the removal techniques detailed above.
  • the removal of the coated substrate 110, 120 may be performed before or after singulation.
  • the singulation of the devices 105, 205, 305 occurs while the devices 105, 205, 305 are on the coated substrate 110, 120, but the singulation method (e.g. laser slicing/dicing) does not extend into the substrate 110, allowing the substrate 110 to be reused.
  • the singulation method e.g. laser slicing/dicing
  • the underlying structure is not a light emitting structure.
  • the underlying structure may include a photosensitive receiver.
  • the LBL layer need not be an optical element, as in the case of an LBL barrier layer that protects the underlying structure from external elements, such as vapor, oxygen, and VOCs.
  • the underlying device may not be a light emitting or light receiving device.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un film couche par couche - tel qu'un réflecteur de Bragg distribué, un revêtement antireflet, un filtre coloré, une couche isolante et autres - qui est formé sur un substrat (110), puis transféré sur la surface d'une structure sous-jacente et détaché du substrat (110). Étant donné que le processus couche par couche permettant de produire le film couche par couche ne peut pas être utilisé sur une surface hydrophobe, telle qu'un substrat siliconé couramment utilisé en tant que film de libération, ou sur des polymères de libération perfluorés, tels que l'ETFE, le substrat (110) peut être modifié par coulage d'un film détachable contenant des groupes fonctionnels chargés ou des groupes fonctionnels non chargés qui sont aptes à générer des groupes fonctionnels chargés par réaction en phase gazeuse ou en phase liquide après le coulage sur ledit substrat (110). En variante, le substrat (110) peut être pourvu d'une couche sacrificielle, telle qu'une bande de libération sensible à la chaleur ou aux UV. La création d'un film couche par couche préformé sur un substrat détachable peut être commandée pour produire des films optiques minces et souples d'une épaisseur uniforme et d'une haute qualité pour des dispositifs électroluminescents (105, 205, 305).
PCT/IB2014/062207 2013-06-24 2014-06-13 Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del WO2014207599A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361838445P 2013-06-24 2013-06-24
US61/838,445 2013-06-24
US201461925727P 2014-01-10 2014-01-10
US61/925,727 2014-01-10

Publications (1)

Publication Number Publication Date
WO2014207599A1 true WO2014207599A1 (fr) 2014-12-31

Family

ID=51136529

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2014/062207 WO2014207599A1 (fr) 2013-06-24 2014-06-13 Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del

Country Status (2)

Country Link
TW (1) TW201507213A (fr)
WO (1) WO2014207599A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019010001A1 (fr) * 2017-07-06 2019-01-10 Ares Materials Inc. Procédé de formation de films de lentilles de recouvrement flexibles
EP3111487B1 (fr) * 2014-02-27 2020-03-11 Lumileds Holding B.V. Procédé de formation d'un dispositif électroluminescent à longueur d'onde convertie

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07225302A (ja) * 1993-12-02 1995-08-22 Dainippon Printing Co Ltd 機能性超微粒子を含む透明機能性膜、透明機能性フィルム及びその製造方法
US20020160166A1 (en) * 2000-04-17 2002-10-31 Hideshi Hattori Antireflection film and method for manufacturing the same
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US20110114969A1 (en) * 2009-11-13 2011-05-19 Seoul Opto Device Co., Ltd. Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
JP2012086476A (ja) * 2010-10-20 2012-05-10 Hitachi Chemical Co Ltd 薄膜転写材及びその製造方法並びに薄膜付き成形体及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07225302A (ja) * 1993-12-02 1995-08-22 Dainippon Printing Co Ltd 機能性超微粒子を含む透明機能性膜、透明機能性フィルム及びその製造方法
US20020160166A1 (en) * 2000-04-17 2002-10-31 Hideshi Hattori Antireflection film and method for manufacturing the same
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US20110114969A1 (en) * 2009-11-13 2011-05-19 Seoul Opto Device Co., Ltd. Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
JP2012086476A (ja) * 2010-10-20 2012-05-10 Hitachi Chemical Co Ltd 薄膜転写材及びその製造方法並びに薄膜付き成形体及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3111487B1 (fr) * 2014-02-27 2020-03-11 Lumileds Holding B.V. Procédé de formation d'un dispositif électroluminescent à longueur d'onde convertie
WO2019010001A1 (fr) * 2017-07-06 2019-01-10 Ares Materials Inc. Procédé de formation de films de lentilles de recouvrement flexibles
US11667111B2 (en) 2017-07-06 2023-06-06 Ares Materials Inc. Method for forming flexible cover lens films

Also Published As

Publication number Publication date
TW201507213A (zh) 2015-02-16

Similar Documents

Publication Publication Date Title
EP3092666B1 (fr) Dispositif électroluminescent sans colle avec convertisseur photoluminescent
US8994050B2 (en) Method for transferring a uniform phosphor layer on an article and light-emitting structure fabricated by the method
US8795817B2 (en) Phosphor film, method of manufacturing the same, coating method of phosphor layer, method of manufacturing LED package, and LED package manufactured thereby
KR20160085286A (ko) Oled 디바이스용 나노구조체
EP2689458B1 (fr) Couche à motifs et en silicone fluorescent sensible aux ultraviolets sur diodes électroluminescentes et procédé de fabrication correspondant
US11081625B2 (en) Packaged LEDs with phosphor films, and associated systems and methods
US20120181565A1 (en) Led with remote phosphor layer and reflective submount
TW201539736A (zh) 用於藉白光成色之 oled 裝置的奈米結構
CN108886015A (zh) 用于接合两个衬底的方法与装置
KR20150036785A (ko) 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법
CN108321304B (zh) 显示面板及其制作方法和显示装置
WO2014207599A1 (fr) Transfert de films minces optiques et de films barrière à partir de substrats détachables pour la fabrication de del
JP2018515920A (ja) オプトエレクトロニクス部品を製造する方法および表面実装用オプトエレクトロニクス部品
CN111129235A (zh) 一种微元件的批量转移方法
JP7038049B2 (ja) 有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンス素子の製造方法
TW201017817A (en) Methods of forming gas barriers on electronic devices
WO2019174705A1 (fr) Feuille de luminophore, procédé de production d'une feuille de luminophore, dispositif optoélectronique, procédé de production d'un dispositif optoélectronique
CN115280521A (zh) 自支撑波长转换磷光体层
US8376801B2 (en) Luminescent component and manufacturing method
KR101140607B1 (ko) 칩 레벨의 형광체 코팅 방법
WO2022104927A1 (fr) Procédé de fabrication de capteur mems
CN110676206A (zh) 一种基于键合工艺制备超厚胶膜的制作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14736453

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14736453

Country of ref document: EP

Kind code of ref document: A1