WO2014203825A1 - Led light source module - Google Patents

Led light source module Download PDF

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Publication number
WO2014203825A1
WO2014203825A1 PCT/JP2014/065750 JP2014065750W WO2014203825A1 WO 2014203825 A1 WO2014203825 A1 WO 2014203825A1 JP 2014065750 W JP2014065750 W JP 2014065750W WO 2014203825 A1 WO2014203825 A1 WO 2014203825A1
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WO
WIPO (PCT)
Prior art keywords
light source
source module
led chip
led
led light
Prior art date
Application number
PCT/JP2014/065750
Other languages
French (fr)
Japanese (ja)
Inventor
智士 内田
洋好 阪口
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013127316A external-priority patent/JP6192377B2/en
Priority claimed from JP2013134090A external-priority patent/JP2015012024A/en
Priority claimed from JP2013134089A external-priority patent/JP2015012023A/en
Application filed by ローム株式会社 filed Critical ローム株式会社
Publication of WO2014203825A1 publication Critical patent/WO2014203825A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/181—Encapsulation
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to an LED light source module.
  • FIG. 50 shows an example of a conventional LED light source module.
  • the LED light source module 900 shown in the figure includes a substrate 91, an LED chip 95, a submount substrate 96, a case 97, and a sealing resin 99.
  • the LED light source module 900 is used as a point light source of an electronic device by being configured as a relatively small module, and is used as an elongated bar light source by disposing a plurality of LED chips 95 on an elongated substrate 91. And a plurality of LED chips 95 arranged in a matrix on the substrate 91 to be used as a planar light source.
  • the substrate 91 includes a base material 92, an insulating layer 93, and a wiring layer 94.
  • the base material 92 is a metal plate made of, for example, aluminum.
  • the insulating layer 93 is made of, for example, an insulating resin and covers the upper surface of the base material 92 in the drawing.
  • the wiring layer 94 is formed on the insulating layer 93 and forms a conduction path to the LED chip 95.
  • the LED chip 95 has a structure in which a plurality of layers made of semiconductors are stacked, and is mounted on a submount substrate 96.
  • the LED chip 95 and the wiring layer 94 are connected via a wire 90.
  • the submount substrate 96 is made of, for example, Si and bonded to the insulating layer 93.
  • the case 97 surrounds the LED chip 95 and has a reflective surface 98.
  • the sealing resin 99 covers the LED chip 95.
  • LED chips 95 In order to increase the brightness and diversify the color tone of the LED light source module 900, there is a measure to increase the number of LED chips 95. However, arranging the LED chips 95 having different specifications in the same region surrounded by the case 97 needs to solve various problems. For example, if a certain LED chip 95 excessively absorbs the light of the other LED chip 95, the desired increase in luminance and color diversification are hindered.
  • the LED light source module 900 a space for bonding the wire 90 to the wiring layer 94 of the substrate 91 is necessary.
  • the LED light source module 900 is configured to include a plurality of LED chips 95 for the purpose of increasing the brightness, the number of bonding points of the wires 90 to the wiring layer 94 increases. For this reason, there exists a problem that size reduction of the LED light source module 900 is inhibited.
  • the present invention has been conceived under the circumstances described above, and an object thereof is to provide an LED light source module capable of achieving high brightness and diversified color tone. Moreover, this invention makes it the subject to provide the LED light source module which can achieve size reduction.
  • the LED light source module provided by the first aspect of the present invention includes a conduction support member having a main surface, and is supported by the conduction support member on the main surface side, and power is supplied via the conduction support member.
  • the first and second LED chips a case supported by the conductive support member and surrounding the first and second LED chips, and a region surrounded by the case covering the first and second LED chips
  • a wavelength of light emitted from the second LED chip is longer than a wavelength of light emitted from the first LED chip, and the second LED chip is the first LED chip.
  • a second chip substrate made of a material that transmits light from the first semiconductor layer, and a second semiconductor layer stacked on the chip substrate.
  • the second chip substrate is made of sapphire.
  • the second chip substrate is in a position overlapping the first LED chip in the direction in which the main surface faces.
  • the second LED chip emits red light.
  • the first LED chip emits blue light.
  • the first LED chip has a first chip substrate made of sapphire or GaN, and a first semiconductor layer stacked on the first chip substrate.
  • the second chip substrate is in a position overlapping the first chip substrate in the direction in which the main surface is directed.
  • the first LED chip has two first upper surface electrodes formed on the first semiconductor layer.
  • the second LED chip has two second upper surface electrodes formed on the second semiconductor layer.
  • the sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and the first resin It includes a fluorescent material that emits light having a wavelength shorter than that of light emitted from the two LED chips.
  • the fluorescent material is made of sulfide.
  • the fluorescent material emits green light.
  • a first submount substrate interposed between the first LED chip and the conduction support member, and a first submount substrate interposed between the second LED chip and the conduction support member.
  • a second submount substrate, and a direction in which the main surface of each of the first submount substrate and the second submount substrate faces is interposed between the sealing resin and the main surface of the conduction support member.
  • the coating resin is white.
  • part most spaced apart from the said main surface among the junction parts of the said coating resin and the said case is from the said main surface rather than any site
  • the conduction support member has a base material and a wiring layer formed on the base material.
  • the base material is made of metal
  • the conductive support member has an insulating layer interposed between the base material and the wiring layer.
  • the base material has a raised portion that is raised from the main surface, and the first and second LED chips are supported by the raised portion.
  • the raised portion has a top surface parallel to the main surface, and an inclined surface connecting the top surface and the main surface.
  • the second LED chip is supported on the top surface.
  • the insulating layer exposes the top surface of the raised portion.
  • the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
  • the depressed portion has a bottom surface that is parallel to the main surface.
  • the bottom surface is included in the raised portion in the thickness direction view.
  • the LED light source module provided by the second aspect of the present invention includes a conduction support member having a main surface, and is supported by the conduction support member on the main surface side, and power is supplied via the conduction support member.
  • the first and second LED chips, a case supported by the conductive support member and surrounding the first and second LED chips, and a region surrounded by the case covering the first and second LED chips A wavelength of light emitted from the second LED chip is longer than a wavelength of light emitted from the first LED chip, and the main resin of the conductive support member And a coating resin that covers at least a part of the side surface of the second LED chip that faces the direction intersecting the main surface of the second LED chip.
  • the second LED chip has a lower surface electrode, a chip substrate, a semiconductor layer and an upper surface electrode, and the coating resin covers at least a part of the chip substrate.
  • the chip substrate is made of GaAs.
  • the lower surface electrode is bonded to the conductive support member via a conductive bonding material, and the upper surface electrode is connected to the conductive support member via a wire.
  • the first LED chip emits blue light
  • the second LED chip emits red light
  • the sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and the first resin It includes a fluorescent material that emits light having a wavelength shorter than that of light emitted from the two LED chips.
  • the fluorescent material is made of sulfide.
  • the fluorescent material emits green light.
  • the coating resin is white.
  • the coating resin has a refractive index smaller than that of the sealing resin.
  • part most spaced apart from the said main surface among the junction parts of the said coating resin and the said case is from the said main surface rather than any site
  • the first LED chip comprises a pedestal portion having a top surface located in a normal direction of the main surface with respect to the main surface and the insulating layer of the substrate, It is supported on the top surface of the pedestal.
  • At least a part of the pedestal portion excluding the top surface is covered with the coating resin.
  • a submount substrate interposed between the conduction support member and the first LED chip is provided, and the pedestal portion is constituted by the submount substrate.
  • the conduction support member has a base material and a wiring layer formed on the base material.
  • the base material is made of metal
  • the conductive support member has an insulating layer interposed between the base material and the wiring layer.
  • the base material has a raised portion that is raised from the main surface, and the pedestal portion is constituted by the raised portion.
  • the raised portion has the top surface parallel to the main surface and an inclined surface connecting the top surface and the main surface.
  • the insulating layer exposes the top surface of the raised portion.
  • the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
  • the depressed portion has a bottom surface that is parallel to the main surface.
  • the bottom surface is included in the raised portion in the thickness direction view.
  • the LED light source module provided by the third aspect of the present invention includes a conduction support member having a main surface, and first and first powers supported by the main surface and supplied with power via the conduction support member.
  • Two first LED chips wherein the first LED chip has a first lower surface electrode facing the main surface and a first upper surface electrode facing the first lower surface electrode.
  • the second LED chip has a second upper surface electrode facing the same side as the first upper surface electrode of the first LED, and the first upper surface electrode of the first LED chip and the second LED A wire connecting the second upper surface electrode of the chip is provided.
  • the conduction support member has a base material and a wiring layer formed on the base material.
  • the base material is made of metal
  • the conductive support member has an insulating layer interposed between the base material and the wiring layer.
  • the second LED chip has a second lower surface electrode facing the same side as the first lower surface electrode of the first LED chip.
  • the second LED chip has an additional second upper surface electrode facing the same side as the second upper surface electrode.
  • the battery pack further includes a third LED chip supported on the main surface and supplied with electric power via the conduction support member.
  • An additional wire is provided to connect the third upper surface electrode of the LED chip.
  • a submount substrate interposed between the second LED chip and the conduction support member is provided.
  • a sealing resin that covers the first and second LED chips and includes a fluorescent material is further provided.
  • the second LED chip emits blue light.
  • the first LED chip emits red light.
  • the fluorescent material emits green light when excited by blue light.
  • the fluorescent material is made of sulfide.
  • a coating resin that covers at least a part of an inner region that is a region surrounded by the reflection surface of the conduction support member and at least a part of a side surface of the first LED.
  • the coating resin covers portions of the wiring layer exposed from the first and second LED chips in the internal region.
  • the coating resin is white.
  • part most spaced apart from the said main surface of the said base material among the junction parts of the said coating resin and the said case is rather than any site
  • the said base material has the protruding part which protruded rather than the said main surface, and while the said insulating layer covers the said main surface of the said base material, of the said protruding part At least a portion is exposed, and the second LED chip is supported by the raised portion.
  • the raised portion has a top surface parallel to the main surface and an inclined surface connecting the top surface and the main surface.
  • the insulating layer exposes the top surface of the raised portion.
  • the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
  • the depressed portion has a bottom surface that is parallel to the main surface.
  • the bottom surface is included in the raised portion in the thickness direction view.
  • FIG. 3 is a cross-sectional view of a principal part taken along line III-III in FIG. 2.
  • It is a principal part expanded sectional view which shows the LED light source module of FIG. It is a principal part expanded sectional view which shows the LED light source module of FIG.
  • FIG. 18 is an essential part cross-sectional view along the line XVIII-XVIII in FIG. 17. It is a principal part expanded sectional view which shows the LED light source module of FIG. It is a principal part expanded sectional view which shows the LED light source module of FIG. It is principal part sectional drawing which shows the LED light source module based on 7th embodiment of this invention. It is principal part sectional drawing which shows the LED light source module based on 8th embodiment of this invention. It is a principal part expanded sectional view which shows the LED light source module of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG.
  • FIG. 33 is a main part sectional view taken along the line XXXIII-XXXIII in FIG. 32;
  • FIG. 32 is an enlarged cross-sectional view of a main part showing the LED light source module of FIG. 31.
  • FIG. 32 is an enlarged cross-sectional view of a main part showing the LED light source module of FIG. It is principal part sectional drawing which shows the LED light source module based on 12th embodiment of this invention.
  • It is a principal part expanded sectional view which shows the LED light source module of FIG.
  • It is principal part sectional drawing which shows the LED light source module based on 13th embodiment of this invention.
  • It is a principal part expanded sectional view which shows the LED light source module of FIG.
  • the LED light source module 101 of this embodiment includes a substrate 200, a first LED chip 310, a second LED chip 320, a coating resin 410, a sealing resin 420, a case 500, a plurality of single function elements 710, and a connector 790. .
  • the LED light source module 101 is configured as an elongated bar light source by arranging a plurality of first LED chips 310 and a plurality of second LED chips 320 on an elongated substrate 200.
  • Such an LED light source module is used to emit planar light from the light guide plate by being disposed at a position facing the side surface of the flat light guide plate. This planar light is used as a backlight of a liquid crystal display device, for example. With the configuration described later, the LED light source module 101 emits white light.
  • FIG. 1 is a plan view of the LED light source module 101
  • FIG. 2 is an enlarged plan view of a main part
  • FIG. 3 is a cross-sectional view in the zx plane along the line III-III in FIG. 4 is an enlarged cross-sectional view of the main part mainly showing the first LED chip 310
  • FIG. 5 is an enlarged cross-sectional view of the main part mainly showing the second LED chip 320.
  • the coating resin 410 and the sealing resin 420 are omitted for convenience of understanding.
  • the substrate 200 as a whole has an elongated shape extending long in the x direction.
  • a plurality of cases 500 are arranged along the longitudinal direction.
  • each case 500 has the same shape, and the configuration inside the case 500 described later is also the same.
  • each single function element 710 is, for example, a Zener diode or a chip resistor.
  • the single function element 710 functions to prevent an excessive reverse voltage from being applied to the first LED chip 310 or the second LED chip 320, for example.
  • the single function element 710 is provided to adjust a difference in operating voltage between a first LED chip 310 and a second LED chip 320 described later.
  • the connector 790 is used to make an electrical connection when the LED light source module 101 is incorporated into a liquid crystal display device, for example.
  • the substrate 200 includes a base 210, an insulating layer 230, a wiring layer 240, and a resist layer 260.
  • the substrate 210 is a substantially strip-shaped metal plate that extends long in the x direction, and is made of, for example, Al, Cu, Fe, or the like.
  • Al is selected as the material of the substrate 210
  • the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm.
  • the substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
  • the insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 .
  • the thickness of the insulating layer 230 is, for example, about 100 ⁇ m.
  • the wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au.
  • the wiring layer 240 is formed on the insulating layer 230. In the region outside the case 500, the wiring layer 240 is covered with a resist layer 260.
  • the resist layer 260 is, for example, white.
  • the case 500 is formed on the substrate 200 so as to surround the first LED chip 310 and the second LED chip 320, and is made of, for example, a white resin, and more specifically, for example, of a white epoxy resin.
  • the case 500 has a reflective surface 501.
  • the reflection surface 501 is inclined with respect to the z direction, and reflects light emitted from the first LED chip 310 and the second LED chip 320 in the x direction and the y direction to emit light upward in the z direction. It fulfills the function to be directed.
  • the first LED chip 310 and the second LED chip 320 are arranged in an area surrounded by the case 500.
  • the first LED chip 310 has a first upper surface electrode 312 and a first upper surface electrode 313 as shown in FIG.
  • the first upper surface electrode 312 and the first upper surface electrode 313 are formed of, for example, an Au plating layer, and one of them functions as a so-called n-type electrode and the other functions as a so-called p-type electrode.
  • the first LED chip 310 includes a first semiconductor layer 315 positioned immediately below the first upper surface electrode 312 and the first upper surface electrode 313, and a first chip substrate 314 on which the first semiconductor layer 315 is formed.
  • the first semiconductor layer 315 is made of a GaN-based semiconductor, for example.
  • the first chip substrate 314 is made of a material that transmits light from the second LED chip 320 described later, and is made of, for example, sapphire or GaN. With such a configuration, the first LED chip 310 emits blue light.
  • the blue light referred to in the present invention has a wavelength range of, for example, about 440 nm to 460 nm.
  • One end of a wire 390 is bonded to each of the first upper surface electrode 312 and the first upper surface electrode 313. The other end of each wire 390 is bonded to an appropriate position on the wiring layer 240.
  • a first submount substrate 301 is provided between the substrate 200 and the first LED chip 310.
  • the first submount substrate 301 has a top surface 301a.
  • the top surface 301 a is parallel to the main surface 211 and supports the first LED chip 310.
  • the first submount substrate 301 is made of, for example, Si and has a thickness of, for example, about 300 ⁇ m.
  • the top surface 301a is coated with a metal such as Al.
  • the first LED chip 310 is indirectly supported on the main surface 211 of the base 210 via the first submount substrate 301.
  • the first submount substrate 301 and the wiring layer 240 are bonded via a metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, Ag.
  • the first LED chip 310 and the first submount substrate 301 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
  • the second LED chip 320 has a second chip substrate 324, a second semiconductor layer 325, a second upper surface electrode 322, and a second upper surface electrode 323.
  • the second chip substrate 324 is made of, for example, sapphire and has a thickness of, for example, about 180 to 250 ⁇ m.
  • the second semiconductor layer 325 is stacked on the upper surface of the second chip substrate 324 in the figure, and is made of, for example, an AlGaInP-based semiconductor material or a GaAs-based semiconductor material.
  • the thickness of the second semiconductor layer 325 is, for example, about 0.5 ⁇ m to 2.0 ⁇ m.
  • the second upper surface electrode 322 and the second upper surface electrode 323 are provided on the upper surface of the second semiconductor layer 325 in the drawing, and are formed of, for example, an Au plating layer.
  • One of the second upper surface electrode 322 and the second upper surface electrode 323 functions as an n-type electrode, and the other functions as a p-type electrode.
  • the second LED chip 320 emits red light.
  • the red light has a wavelength range of, for example, about 600 nm to 670 nm.
  • One end of a wire 390 is bonded to each of the second upper surface electrode 322 and the second upper surface electrode 323. The other end of each wire 390 is bonded to an appropriate position on the wiring layer 240.
  • the second semiconductor layer 325 is grown and formed on a temporary substrate made of, for example, GaAs. Then, the second semiconductor layer 325 is replaced from the temporary substrate to the second chip substrate 324, whereby the second LED chip 320 is obtained.
  • the second chip substrate 324 made of sapphire transmits the blue light from the first LED chip 310.
  • a second submount substrate 302 is provided between the substrate 200 and the second LED chip 320.
  • the second submount substrate 302 has a top surface 302a.
  • the top surface 302a is parallel to the main surface 211 and supports the second LED chip 320.
  • the second submount substrate 302 is made of, for example, Si and has a thickness of, for example, about 300 ⁇ m.
  • the top surface 302a is coated with a metal such as Al.
  • the second LED chip 320 is indirectly supported on the main surface 211 of the base 210 via the second submount substrate 302.
  • the second submount substrate 302 and the wiring layer 240 are bonded via a metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, Ag.
  • the second LED chip 320 and the second submount substrate 302 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
  • the coating resin 410 covers the area surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320.
  • the material of the coating resin 410 is not particularly limited, but in the present embodiment, it is made of a white resin such as a silicone resin mixed with titanium oxide.
  • the coating resin 410 covers at least a part of the side surface of the first submount substrate 301.
  • This side surface is an example of a surface that faces a direction that intersects the direction (z direction) in which the main surface 211 faces, and in the present embodiment, a direction that is perpendicular to the z direction (direction included in the xy plane). It is suitable.
  • the side surface of the first submount substrate 301 is preferably partially or entirely covered with a coating resin.
  • the top surface 301 a of the first submount substrate 301 is preferably exposed from the coating resin 410.
  • the coating resin 410 covers at least a part of the side surface of the second submount substrate 302.
  • This side surface is an example of a surface that faces a direction that intersects the direction (z direction) in which the main surface 211 faces, and in the present embodiment, a direction that is perpendicular to the z direction (direction included in the xy plane). It is suitable.
  • the side surface of the second submount substrate 302 is preferably partially or entirely covered with the coating resin 410.
  • the top surface 302 a of the second submount substrate 302 is preferably exposed from the coating resin 410.
  • the outer edge of the coating resin 410 is in contact with the reflection surface 501 of the case 500.
  • the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 in the z-direction upward is the main portion of any portion of the first LED chip 310 and the second LED chip 320.
  • the surface 211 is spaced upward in the z direction. That is, the distance H0 between the main surface 211 and the portion of the joint portion between the coating resin 410 and the case 500 that is farthest upward in the z direction from the main surface 211 is farthest from the main surface 211 of the first LED chip 310.
  • the distance H1 between the part and the main surface 211 and the distance H2 between the part of the second LED chip 320 farthest from the main surface 211 and the main surface 211 are larger.
  • the coating resin 410 has a reflective surface 411.
  • the reflective surface 411 is gently inclined so as to move away from the base material 210 in the z direction from the vicinity of the upper end of each side surface of the first submount substrate 301 and the second submount substrate 302 toward the reflective surface 501 of the case 500. .
  • the sealing resin 420 covers the first LED chip 310 and the second LED chip 320 in the region surrounded by the case 500.
  • the sealing resin 420 is made of a material in which a fluorescent material is mixed in, for example, a transparent epoxy resin or silicone resin. This fluorescent material emits green light by being excited by blue light from the first LED chip 310, for example.
  • the green light referred to in the present invention has a wavelength range of, for example, about 500 nm to 565 nm.
  • the fluorescent material contained in the sealing resin 420 is a sulfide-based fluorescent material.
  • the sulfide-based fluorescent material is one or more selected from the group consisting of calcium sulfide (CaS), zinc sulfide (ZnS), strontium sulfide (SrS), strontium thiogallate (SrGa2S4), and calcium thiogallate (CaGa2S4). Of sulfides.
  • the sulfide-based fluorescent material constituting the phosphor is a material doped with at least one element of Eu, Tb, Sm, Pr, Dy, and Tm.
  • the fluorescent material is, for example, strontium thiogallate doped with europium (SrGa 2 S 4 : Eu) or calcium thiogallate doped with europium (CaGa 2 S 4 : Eu).
  • the element doped in the fluorescent material emitting green light is not limited to Eu, and may be any of Tb, Sm, Pr, Dy, and Tm.
  • light traveling from the first LED chip 310 toward the second LED chip 320 substantially along the xy plane passes through the second chip substrate 324 of the second LED chip 320. It is possible to penetrate. For this reason, more light from the first LED chip 310 can be emitted, and the LED light source module 101 can have higher luminance or more diverse colors.
  • the second chip substrate 324 occupies most of the second LED chip 320.
  • sapphire which is the material of the second chip substrate 324, is particularly easy to transmit blue light from the first LED chip 310. Therefore, it is reasonable to suppress the blue light from the first LED chip 310 from being absorbed by the second chip substrate 324.
  • the second chip substrate 324 is located at the position overlapping the first LED chip 310 in the z direction, the light traveling along the xy plane from the first LED chip 310 can be suitably transmitted.
  • the first chip substrate 314 of the first LED chip 310 can transmit the red light from the second LED chip 320. Therefore, more light from the second LED chip 320 can be emitted.
  • the sealing resin 420 emits green light when excited by light from the first LED chip 310.
  • the second chip substrate 324 of the second LED chip 320 can transmit this green light. This is advantageous for making the white light from the LED light source module 101 have a desired hue.
  • the first submount substrate 301 and the second submount substrate 302 are covered with the coating resin 410.
  • the first submount substrate 301 and the second submount substrate 302 are made of Si that easily absorbs visible light.
  • the first LED chip 310 and the second LED chip are formed by the first submount substrate 301 and the second submount substrate 302. 320 or the light from the sealing resin 420 can be prevented from being absorbed.
  • the fact that the top surface 301a of the first submount substrate 301 and the top surface 302a of the second submount substrate 302 are coated with Al indicates that the first LED chip 310, the second LED chip 320, or the sealing. There is an advantage that absorption of light from the stop resin 420 can be prevented and reflected.
  • the sealing resin 420 includes a fluorescent material made of sulfide. While such a sulfide has good characteristics for emitting vivid green light, there is a concern that many metals are sulfided.
  • the wiring layer 240 that can undergo sulfuration is covered with the coating resin 410 and is isolated from the sealing resin 420. For this reason, the wiring layer 240 is very unlikely to be subjected to sulfurization.
  • the covering resin 410 covers at least a part of the reflection surface 501 of the case 500.
  • the coating resin 410 is configured to cover most of the reflective surface 501 of the case 500.
  • blue light from the first LED chip 310, red light from the second LED chip 320, and green light from the sealing resin 420 can be prevented from reaching the case 500.
  • the epoxy resin suitable as the material of the case 500 is more significantly deteriorated by light than the silicone resin suitable as the material of the coating resin 410. According to this embodiment, it is possible to suppress the case 500 from being deteriorated by light, and the LED light source module 101 can appropriately emit light over a longer period.
  • FIG. 6 and 7 show an LED light source module according to the second embodiment of the present invention.
  • the LED light source module 102 of the present embodiment is different from the above-described embodiment in the configuration of the substrate 200.
  • the substrate 200 includes a base 210, a plating layer 220, an insulating layer 230, and a wiring layer 240.
  • the substrate 210 is a long rectangular metal plate that extends in the x direction and the y direction and extends in the x direction, for example, and is made of, for example, Al, Cu, Fe, or the like.
  • Al is selected as the material of the substrate 210
  • the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm.
  • the substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
  • a raised portion 212 and a depressed portion 216 are formed on the substrate 210.
  • the raised portion 212 is a portion raised above the main surface 211 in the z direction, and has a top surface 213 and an inclined surface 214 in the present embodiment.
  • the top surface 213 is the surface of the protruding portion 212 that protrudes most upward in the z direction, and is parallel to the main surface 211.
  • the top surface 213 has a rectangular shape.
  • the inclined surface 214 is connected to the main surface 211 and the top surface 213, and is inclined with respect to the xy plane.
  • the height of the raised portion 212 from the main surface 211 is, for example, 150 to 200 ⁇ m.
  • the depressed portion 216 is a portion that is recessed above the back surface 215 in the z direction, and overlaps the raised portion 212 when viewed in the z direction.
  • the depressed portion 216 has a bottom surface 217.
  • the bottom surface 217 is parallel to the back surface 215 and has a rectangular shape in the present embodiment.
  • the bottom surface 217 is included in the raised portion 212.
  • the bottom surface 217 and the top surface 213 have their outer edges almost overlapping each other when viewed in the z direction, or the outer edge of the bottom surface 217 is located slightly inside the outer edge of the top surface 213.
  • the depression depth from the back surface 215 of the depression 216 is, for example, 150 to 200 ⁇ m.
  • the plated layer 220 covers the top surface 213 of the raised portion 212 and is made of a metal such as Cu, Ni, Pd, or Au. In the present embodiment, the plating layer 220 is laminated with Ni, Pd, and Au.
  • the insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 .
  • An opening 231 is formed in the insulating layer 230.
  • the opening 231 is provided to expose at least a part of the raised portion 212, and in the present embodiment, the top surface 213 of the raised portion 212 is exposed.
  • the inclined surface 214 of the raised portion 212 is covered with the insulating layer 230.
  • the thickness of the insulating layer 230 is, for example, about 100 ⁇ m.
  • the wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au.
  • the wiring layer 240 is formed on the insulating layer 230.
  • the wiring layer 240 is formed on a flat portion of the insulating layer 230 that covers the main surface 211.
  • the wiring layer 240 has a base layer 251 and a plating layer 252.
  • the underlayer 251 is formed on the insulating layer 230 and is a layer to which, for example, a Cu foil is attached. Note that the base layer 251 may be formed by plating.
  • the plating layer 252 is formed on the base layer 251, and Ni, Pd, and Au are laminated similarly to the plating layer 220. As will be described later, in the present embodiment, the plating layer 252 of the wiring layer 240 and the plating layer 220 of the substrate 200 are collectively formed by the same process.
  • the first submount substrate 301 and the second submount substrate 302 are both supported by the top surface 213 of the raised portion 212 via the plating layer 220.
  • the first submount substrate 301 and the second submount substrate 302 and the plating layer 220 are bonded together by a metal bonding layer 341.
  • One wire 390 connected to the first LED chip 310 is bonded to an appropriate position (not shown) of the wiring layer 240 located in front of or behind the y direction in FIG.
  • one wire 390 connected to the second LED chip 320 is bonded to an appropriate position (not shown) of the wiring layer 240 located in front of or behind the y direction in FIG.
  • a metal plate 210 ′ is prepared as shown in FIG.
  • the metal plate 210 ′ is made of, for example, Al, Cu, Fe or the like.
  • Al is selected as the material of the metal plate 210 ′
  • the thickness of the metal plate 210 ′ is, for example, about 1.0 to 1.5 mm.
  • the metal plate 210 ′ has a main surface 211 ′ and a back surface 215 ′ that face in opposite directions in the z direction.
  • an insulating layer 230 ′ is formed so as to cover the main surface 211 ′.
  • the insulating layer 230 ′ is made of an insulating resin or an insulating material such as SiO 2 .
  • the thickness of the insulating layer 230 ′ is, for example, about 100 ⁇ m.
  • a base layer 251 ′ is formed so as to cover the insulating layer 230 ′.
  • the underlayer 251 ′ is formed, for example, by attaching a Cu foil on the insulating layer 230 ′.
  • the base layer 251 ' is patterned by using, for example, etching to form the base layer 251 as shown in FIG.
  • the base layer 251 may be formed by attaching a Cu foil that has been previously patterned to the insulating layer 230 ′.
  • the metal plate 210 ′ is processed using the molds 610 and 620.
  • the mold 610 has a rectangular top surface.
  • the mold 620 has a rectangular recess 621.
  • the recess 621 is slightly larger than the upper surface of the mold 610 when viewed in the z direction.
  • a metal mold 610 is disposed on the back surface 215 ′ side of the metal plate 210 ′, and a metal mold 620 is disposed on the main surface 211 ′ side of the metal plate 210 ′. Then, the upper surface of the mold 610 is fitted into the metal plate 210 ′ by bringing the mold 610 and the mold 620 closer to each other. Thereby, the base material 210 which has the protruding part 212 and the depression part 216 is obtained. A portion where the upper surface of the mold 610 is in contact becomes a bottom surface 217 of the depressed portion 216. Further, the surface of the portion that has entered the recess 621 of the mold 620 corresponding to the mold 610 becomes the top surface 213.
  • the base layer 251 is in contact with a position where the concave portion 621 is avoided in the mold 620 and is not deformed.
  • the insulating layer 230 ′ is deformed into a shape along the raised portion 212.
  • the insulating layer 230 is formed as shown in FIG.
  • the process of removing a part of the insulating layer 230 ′ is performed using, for example, a squeegee 630.
  • the lower end edge of the squeegee 630 extends long in parallel to the y direction.
  • the squeegee 630 is moved in the x direction while the lower edge of the squeegee 630 is located at the same level as or slightly below the top surface 213 in the z direction.
  • the portion of the insulating layer 230 ′ located above the top surface 213 in the z direction is removed by the squeegee 630.
  • the insulating layer 230 having the opening 231 exposing only the top surface 213 is formed.
  • the base layer 251 is located sufficiently below the top surface 213 in the z direction, and thus does not contact the squeegee 630.
  • a plating layer 220 and a plating layer 252 are formed.
  • the plated layer 220 and the plated layer 252 are formed by, for example, electrolytic plating. Therefore, the plating layer 220 and the base layer 251 made of Ni, Pd, Au are formed so as to cover the top surface 213 and the base layer 251 of the base material 210, which is a conductor, and is not formed on the insulating layer 230. .
  • the substrate 200 including the base 210, the plating layer 220, the insulating layer 230, and the wiring layer 240 is obtained.
  • the case 500 is formed, the first submount substrate 301 and the first LED chip 310 are mounted, the second submount substrate 302 and the second LED chip 320 are mounted, the coating resin 410 is formed, the wire 390 is bonded, The LED light source module 102 is obtained through the formation of the sealing resin 420.
  • the LED light source module 102 can be increased in brightness and color tone. Further, the first submount substrate 301 and the second submount substrate 302 are supported by the raised portions 212 without the insulating layer 230 interposed therebetween. Thereby, the heat transfer from the first LED chip 310 and the second LED chip 320 is not hindered by the insulating layer 230. Therefore, heat radiation from the first LED chip 310 and the second LED chip 320 can be promoted, and the brightness of the LED light source module 102 can be increased.
  • the wiring layer 240 is formed on the insulating layer 230 and is disposed at a position avoiding the raised portion 212 (base material 210). For this reason, it can avoid that the base material 210 and the wiring layer 240 which consist of a metal are unjustly conducted.
  • the top surface 213 of the raised portion 212 is exposed from the insulating layer 230, and portions other than the top surface 213 are covered with the insulating layer 230.
  • substrate 302, and the 2nd LED chip 320 on the top surface 213 parallel to the main surface 211 can be performed easily.
  • the top surface 213 but also the inclined portion 214 may be exposed from the insulating layer.
  • the raised portion 212 can be easily formed by pressing the mold 610 from the back surface 215 ′ side of the metal plate 210 ′ as shown in FIG. There is an advantage that you can.
  • FIG. 13 shows an LED light source module according to the third embodiment of the present invention.
  • the LED light source module 103 of this embodiment does not include the first submount substrate 301 and the second submount substrate 302. Therefore, the first LED chip 310 and the second LED chip 320 are bonded to the plating layer 220 via the metal bonding layer 341, respectively.
  • the coating resin 410 covers the wiring layer 240 and the insulating layer 230, while exposing the plating layer 220 formed on the top surface 213 of the raised portion 212. For this reason, the plating layer 220 is in contact with the sealing resin 420.
  • the plating layer 220 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the substrate 210 side.
  • the Ni layer is formed directly on the top surface 213 and has a thickness of about 5 ⁇ m, for example.
  • the Pd layer is formed on the Ni layer and has a thickness of about 0.1 ⁇ m, for example.
  • the Au layer is formed on the Pd layer and has a thickness of about 0.1 ⁇ m, for example.
  • the plating layer 252 of the wiring layer 240 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the base layer 251 side. The configurations of these Ni layer, Pd layer, and Au layer are the same as those of the plating layer 220.
  • the LED light source module 103 can be increased in brightness and color tone.
  • the plating layer 220 is in contact with the sealing resin 420.
  • the plating layer 220 is an Au layer whose surface layer has a relatively high resistance to sulfidation. Therefore, the plating layer 220 can be prevented from being sulfided by the fluorescent material of the sealing resin 420.
  • FIG. 14 shows an LED light source module according to the fourth embodiment of the present invention.
  • the LED light source module 104 of this embodiment is mainly different from the LED light source module 101 described above in that the coating resin 410 is not provided.
  • the coating resin 410 is not provided, the wiring layer 240 and the insulating layer 230 are in contact with the sealing resin 420.
  • the wiring layer 240 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the substrate 210 side.
  • the Ni layer is formed directly on the top surface 213 and has a thickness of about 5 ⁇ m, for example.
  • the Pd layer is formed on the Ni layer and has a thickness of about 0.1 ⁇ m, for example.
  • the Au layer is formed on the Pd layer and has a thickness of about 0.1 ⁇ m, for example. Further, it is preferable to provide a Cu layer between the Ni layer and the insulating layer 230.
  • the LED light source module 104 can be increased in brightness and color tone. Even in the configuration without the coating resin 410, the surface layers of the wiring layer 240 and the plating layer 220 are Au layers. Thereby, the wiring layer 240 and the plating layer 220 can be prevented from being sulfided by the sealing resin 420.
  • FIG. 15 shows an LED light source module according to the fifth embodiment of the present invention.
  • the LED light source module 105 of this embodiment is used as a point light source of an electronic device by being configured as a relatively small module.
  • the LED light source modules 101 to 104 described above are different from those configured as bar-shaped light sources extending in the x direction.
  • the lead support 270 and the lead 280 constitute a conduction support member referred to in the present invention.
  • the lead 270 and the lead 280 are made of metal, for example, a Cu plate as a base material is plated with Ni, Au, or the like.
  • the lead 270 has a main surface 271 and a terminal portion 275.
  • the main surface 271 faces upward in the z direction, and supports the second LED chip 320 via the second submount substrate 302.
  • the terminal portion 275 is used for mounting the LED light source module 105 on a circuit board (not shown).
  • the lead 280 has a main surface 281 and a terminal portion 285.
  • the main surface 281 faces upward in the z direction and supports the first LED chip 310 via the first submount substrate 301.
  • the terminal portion 285 is used for mounting the LED light source module 105 on a circuit board (not shown).
  • the case 500 covers a part of each of the lead 270 and the lead 280 and plays a role of relatively fixing them.
  • the LED light source module 105 can be increased in luminance and color tone.
  • the LED light source module 106 of this embodiment includes a substrate 200, a first LED chip 310, a second LED chip 320, a coating resin 410, a sealing resin 420, a case 500, a plurality of single function elements 710 and a connector 790. .
  • the LED light source module 106 is configured as an elongated bar light source by arranging a plurality of first LED chips 310 and a plurality of second LED chips 320 on an elongated substrate 200.
  • Such an LED light source module is used to emit planar light from the light guide plate by being disposed at a position facing the side surface of the flat light guide plate. This planar light is used as a backlight of a liquid crystal display device, for example. With the configuration described later, the LED light source module 106 emits white light.
  • FIG. 16 is a plan view of the LED light source module 106
  • FIG. 17 is an enlarged plan view of a main part.
  • 18 is a cross-sectional view in the zx plane along the line XVIII-XVIII in FIG.
  • FIG. 19 is an enlarged cross-sectional view of main parts mainly showing the first LED chip 310
  • FIG. 20 is an enlarged cross-sectional view showing main parts mainly showing the second LED chip 320.
  • the coating resin 410 and the sealing resin 420 are omitted for convenience of understanding.
  • the substrate 200 as a whole has an elongated shape extending long in the x direction.
  • a plurality of cases 500 are arranged along the longitudinal direction.
  • each case 500 has the same shape, and the configuration inside the case 500 described later is also the same.
  • each single function element 710 is, for example, a Zener diode or a chip resistor.
  • the single function element 710 functions to prevent an excessive reverse voltage from being applied to the first LED chip 310 or the second LED chip 320, for example.
  • a chip resistor is employed as the single function element 710, it is provided to adjust a difference in operating voltage between a first LED chip 310 and a second LED chip 320, which will be described later.
  • the connector 790 is used to make an electrical connection when the LED light source module 106 is incorporated into, for example, a liquid crystal display device.
  • the substrate 200 includes a base 210, an insulating layer 230, a wiring layer 240, and a resist layer 260.
  • the substrate 210 is a substantially strip-shaped metal plate that extends long in the x direction, and is made of, for example, Al, Cu, Fe, or the like.
  • Al is selected as the material of the substrate 210
  • the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm.
  • the substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
  • the insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 .
  • the thickness of the insulating layer 230 is, for example, about 100 ⁇ m.
  • the wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au.
  • the wiring layer 240 is formed on the insulating layer 230. In the region outside the case 500, the wiring layer 240 is covered with a resist layer 260.
  • the resist layer 260 is, for example, white.
  • the case 500 is formed on the substrate 200 so as to surround the first LED chip 310 and the second LED chip 320, and is made of, for example, a white resin, and more specifically, for example, of a white epoxy resin.
  • the case 500 has a reflective surface 501.
  • the reflecting surface 501 is inclined with respect to the z direction, and reflects light emitted from the first LED chip 310 and the second LED chip 320 in the x direction and the y direction to be directed upward in the z direction. Fulfills the function.
  • the first LED chip 310 and the second LED chip 320 are arranged in an area surrounded by the case 500.
  • the first LED chip 310 has an upper surface electrode 312 and an upper surface electrode 313 as shown in FIG.
  • the upper surface electrode 312 and the upper surface electrode 313 are formed of, for example, an Au plating layer, and one of them functions as a so-called n-type electrode and the other functions as a so-called p-type electrode.
  • the first LED chip 310 includes, for example, a semiconductor layer located immediately below the upper surface electrode 312 and the upper surface electrode 313 and, for example, a sapphire substrate on which the semiconductor layer is formed. This semiconductor layer is made of, for example, a GaN-based semiconductor. With such a configuration, the first LED chip 310 emits blue light.
  • the blue light referred to in the present invention has a wavelength range of, for example, about 440 nm to 460 nm.
  • One end of a wire 390 is bonded to each of the upper surface electrode 312 and the upper surface electrode 313.
  • the other end of each wire 390 is bonded to an appropriate position on the wiring layer 240.
  • a submount substrate 301 is provided between the substrate 200 and the first LED chip 310.
  • the submount substrate 301 has a top surface 301a.
  • the top surface 301 a is parallel to the main surface 211 and supports the first LED chip 310.
  • the submount substrate 301 is made of, for example, Si and has a thickness of, for example, about 300 ⁇ m.
  • the first LED chip 310 is indirectly supported on the main surface 211 of the base 210 via the submount substrate 301.
  • the submount substrate 301 and the wiring layer 240 are bonded via a metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, Ag.
  • the first LED chip 310 and the submount substrate 301 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
  • the submount substrate 301 constitutes a pedestal portion referred to in the present invention.
  • the second LED chip 320 includes a chip substrate 323, a semiconductor layer 324, a lower surface electrode 321 and an upper surface electrode 322 as shown in FIGS.
  • the chip substrate 323 is made of, for example, GaAs and has a thickness of, for example, about 180 to 250 ⁇ m.
  • the semiconductor layer 324 is stacked on the upper surface of the chip substrate 323 in the figure, and is made of, for example, a GaAs-based semiconductor material.
  • the thickness of the semiconductor layer 324 is, for example, about 0.5 ⁇ m to 2.0 ⁇ m.
  • the lower surface electrode 321 is provided on the lower surface of the chip substrate 323 in the figure, and functions as, for example, an n-type electrode.
  • the lower electrode 321 is formed of, for example, an Au plating layer.
  • the upper surface electrode 322 is provided on the upper surface of the semiconductor layer 324 in the figure and functions as, for example, a p-type electrode.
  • the upper surface electrode 322 is formed of, for example, an Au plating layer.
  • the second LED chip 320 emits red light.
  • the red light has a wavelength range of, for example, about 600 nm to 670 nm.
  • the lower surface electrode 321 is bonded to the wiring layer 240 through the metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 321 and the wiring layer 240.
  • One end of a wire 390 is bonded to the upper surface electrode 322. The other end of the wire 390 is bonded to an appropriate position on the wiring layer 240.
  • the coating resin 410 covers the area surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320.
  • the material of the coating resin 410 is not particularly limited, but in the present embodiment, it is made of a white resin such as a silicone resin mixed with titanium oxide.
  • the coating resin 410 covers most of the side surfaces of the submount substrate 301.
  • the side surface of the submount substrate 301 is preferably partially or entirely covered with the coating resin 410.
  • the top surface 301 a of the submount substrate 301 is preferably exposed from the coating resin 410.
  • the coating resin 410 covers at least a part of the side surface of the second LED chip 320.
  • This side surface is an example of a surface that faces a direction that intersects the direction (z direction) in which the main surface 211 faces, and in the present embodiment, a direction that is perpendicular to the z direction (direction included in the xy plane). It is suitable.
  • the coating resin 410 in the second LED chip 320, at least a part of the side surface of the chip substrate 323 is covered with the coating resin 410, and more specifically, almost the entire side surface of the chip substrate 323 is covered. It is covered with a coating resin 410.
  • the side surface of the semiconductor layer 324 is allowed to be covered with the coating resin 410, but the entire upper surface is preferably exposed from the coating resin 410.
  • the outer edge of the coating resin 410 is in contact with the reflection surface 501 of the case 500.
  • the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 in the z-direction upward is the main portion of any portion of the first LED chip 310 and the second LED chip 320.
  • the surface 211 is spaced upward in the z direction. That is, the distance H0 between the main surface 211 and the portion of the joint portion between the coating resin 410 and the case 500 that is farthest upward in the z direction from the main surface 211 is farthest from the main surface 211 of the first LED chip 310.
  • the distance H1 between the part and the main surface 211 and the distance H2 between the part of the second LED chip 320 farthest from the main surface 211 and the main surface 211 are larger.
  • the coating resin 410 has a reflective surface 411.
  • the reflective surface 411 is gently inclined so as to move away from the base material 210 in the z direction from the vicinity of the upper surfaces of the submount substrate 301 and the second LED chip 320 toward the reflective surface 501 of the case 500.
  • the sealing resin 420 covers the first LED chip 310 and the second LED chip 320 in the region surrounded by the case 500.
  • the sealing resin 420 is made of a material in which a fluorescent material is mixed in, for example, a transparent epoxy resin or silicone resin. This fluorescent material emits green light by being excited by blue light from the first LED chip 310, for example.
  • the green light referred to in the present invention has a wavelength range of, for example, about 500 nm to 565 nm.
  • the fluorescent material contained in the sealing resin 420 is a sulfide-based fluorescent material.
  • the sulfide-based fluorescent material is one or more selected from the group consisting of calcium sulfide (CaS), zinc sulfide (ZnS), strontium sulfide (SrS), strontium thiogallate (SrGa2S4), and calcium thiogallate (CaGa2S4). Of sulfides.
  • the sulfide-based fluorescent material constituting the phosphor is a material doped with at least one element of Eu, Tb, Sm, Pr, Dy, and Tm.
  • the fluorescent material is, for example, strontium thiogallate doped with europium (SrGa 2 S 4 : Eu) or calcium thiogallate doped with europium (CaGa 2 S 4 : Eu).
  • the element doped in the fluorescent material emitting green light is not limited to Eu, and may be any of Tb, Sm, Pr, Dy, and Tm.
  • the coating resin 410 prevents light traveling substantially along the xy plane among the light emitted from the first LED chip 310 from reaching the side surface of the second LED chip 320. Can do. For this reason, it is possible to emit more light from the first LED chip 310, and it is possible to increase the brightness or diversify the color tone of the LED light source module 106.
  • the second LED chip 320 that emits light having a wavelength longer than that of the first LED chip 310 has a characteristic of easily absorbing light from the first LED chip 310. For this reason, covering the second LED chip 320 with the coating resin 410 is suitable for suppressing light absorption.
  • the chip substrate 323 is a part that occupies most of the second LED chip 320. Further, GaAs which is a material of the chip substrate 323 is particularly easy to absorb blue light from the first LED chip 310. Covering the chip substrate 323 with the coating resin 410 is reasonable for suppressing the blue light from the first LED chip 310 from being absorbed.
  • the semiconductor layer 324 is significantly thinner than the chip substrate 323, and occupies only substantially the upper surface of the second LED chip 320. By exposing at least the upper surface of the semiconductor layer 324 from the coating resin 410, most of the red light from the second LED chip 320 can be appropriately emitted upward in the z direction.
  • the sealing resin 420 emits green light when excited by light from the first LED chip 310. This green light has a shorter wavelength than the red light from the second LED chip 320. For this reason, the green light can also be absorbed by the second LED chip 320. According to this embodiment, it is possible to suppress the green light from the sealing resin 420 from being absorbed by the coating resin 410. This is advantageous for making the white light from the LED light source module 106 have a desired hue.
  • the sealing resin 420 includes a fluorescent material made of sulfide. While such a sulfide has good characteristics for emitting vivid green light, there is a concern that many metals are sulfided.
  • the wiring layer 240 that can undergo sulfuration is covered with the coating resin 410 and is isolated from the sealing resin 420. For this reason, the wiring layer 240 is very unlikely to be subjected to sulfurization.
  • the coating resin 410 covers a part of the submount substrate 301 that supports the first LED chip 310.
  • the submount substrate 301 made of Si can absorb red light from the second LED chip 320 and green light from the sealing resin 420.
  • the coating resin 410 is suitable for suppressing the absorption of these red light and green light.
  • the coating resin 410 is intended to expose the upper surface of the submount substrate 301 while actively covering the side surface of the submount substrate 301. Thereby, it is possible to avoid the covering resin 410 from accidentally covering the first LED chip 310.
  • the covering resin 410 covers at least a part of the reflection surface 501 of the case 500.
  • the coating resin 410 is configured to cover most of the reflective surface 501 of the case 500.
  • blue light from the first LED chip 310, red light from the second LED chip 320, and green light from the sealing resin 420 can be prevented from reaching the case 500.
  • the epoxy resin suitable as the material of the case 500 is more significantly deteriorated by light than the silicone resin suitable as the material of the coating resin 410. According to the present embodiment, the case 500 can be prevented from being deteriorated by light, and the LED light source module 106 can appropriately emit light over a longer period.
  • FIG. 21 shows an LED light source module according to the seventh embodiment of the present invention.
  • an opening 231 is formed in the insulating layer 230 of the substrate 200.
  • the opening 231 has, for example, a rectangular shape as viewed in the z direction, and exposes a part of the main surface 211 of the substrate 210.
  • a plating layer 220 is formed on the exposed portion of the main surface 211.
  • the plated layer 220 is made of a metal such as Cu, Ni, Pd, or Au, and in the present embodiment, Ni, Pd, and Au are laminated.
  • the submount substrate 301 is bonded to the plating layer 220 via the metal bonding layer 341.
  • the wiring layer 240 is composed of the base layer 251 and the plating layer 252.
  • the underlayer 251 is formed directly on the insulating layer 230 and is a layer to which, for example, a Cu foil is attached.
  • the base layer 251 may be formed by plating.
  • the plating layer 252 is formed on the base layer 251.
  • Ni, Pd, and Au are laminated.
  • the plating layer 252 and the plating layer 220 described above can be formed by the same plating process.
  • the covering resin 410 of this embodiment covers the region surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320, as in the above-described embodiment.
  • the joint portion between the coating resin 410 and the case 500 has a relatively small thickness in the z direction. Therefore, the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 is at a height that overlaps the first LED chip 310 or the submount substrate 301 or the second LED chip 320 in the z direction. .
  • the LED light source module 107 can have high brightness and various color tones.
  • the submount substrate 301 is supported by the base member 210 without the insulating layer 230 interposed therebetween. Thereby, the heat from the first LED chip 310 can be transmitted to the base material 210 more efficiently.
  • the substrate 210 is made of Al having a good thermal conductivity. Thereby, the brightness of the first LED chip 310 can be increased, or the secular change can be suppressed.
  • the coating resin 410 is configured such that the height of the joint portion with the case 500 is relatively low. However, even with such a configuration, since the side surface of the second LED chip 320 and the side surface of the submount substrate 301 are covered, the coating resin 410 can contribute to high brightness and a wide variety of colors. Further, the same effect can be expected in that the wiring layer 240 is protected from sulfurization by being covered with the coating resin 410.
  • the form of the coating resin 410 is more preferably the form of the LED light source module 106, the form of the present embodiment can also be taken. In the following embodiments, any form is applicable. Yes.
  • the LED light source module 108 of the present embodiment is different from the above-described embodiment in the configuration of the substrate 200.
  • the substrate 200 includes a base 210, a plating layer 220, an insulating layer 230, and a wiring layer 240.
  • the substrate 210 is a long rectangular metal plate that extends in the x direction and the y direction and extends in the x direction, for example, and is made of, for example, Al, Cu, Fe, or the like.
  • Al is selected as the material of the substrate 210
  • the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm.
  • the substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
  • a raised portion 212 and a depressed portion 216 are formed on the substrate 210.
  • the raised portion 212 is a portion raised above the main surface 211 in the z direction, and has a top surface 213 and an inclined surface 214 in the present embodiment.
  • the top surface 213 is the surface of the protruding portion 212 that protrudes most upward in the z direction, and is parallel to the main surface 211.
  • the top surface 213 has a rectangular shape.
  • the inclined surface 214 is connected to the main surface 211 and the top surface 213, and is inclined with respect to the xy plane.
  • the height of the raised portion 212 from the main surface 211 is, for example, 150 to 200 ⁇ m.
  • the raised portion 212 constitutes a pedestal portion referred to in the present invention.
  • the depressed portion 216 is a portion that is recessed above the back surface 215 in the z direction, and overlaps the raised portion 212 when viewed in the z direction.
  • the depressed portion 216 has a bottom surface 217.
  • the bottom surface 217 is parallel to the back surface 215 and has a rectangular shape in the present embodiment.
  • the bottom surface 217 is included in the raised portion 212.
  • the bottom surface 217 and the top surface 213 have their outer edges almost overlapping each other when viewed in the z direction, or the outer edge of the bottom surface 217 is located slightly inside the outer edge of the top surface 213.
  • the depression depth from the back surface 215 of the depression 216 is, for example, 150 to 200 ⁇ m.
  • the plated layer 220 covers the top surface 213 of the raised portion 212 and is made of a metal such as Cu, Ni, Pd, or Au. In the present embodiment, the plating layer 220 is laminated with Ni, Pd, and Au.
  • the insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 .
  • An opening 231 is formed in the insulating layer 230.
  • the opening 231 is provided to expose at least a part of the raised portion 212, and in the present embodiment, the top surface 213 of the raised portion 212 is exposed.
  • the inclined surface 214 of the raised portion 212 is covered with the insulating layer 230.
  • the thickness of the insulating layer 230 is, for example, about 100 ⁇ m.
  • the wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au.
  • the wiring layer 240 is formed on the insulating layer 230.
  • the wiring layer 240 is formed on a flat portion of the insulating layer 230 that covers the main surface 211.
  • the wiring layer 240 has a base layer 251 and a plating layer 252.
  • the underlayer 251 is formed on the insulating layer 230 and is made of, for example, Cu.
  • the plating layer 252 is formed on the base layer 251, and Ni, Pd, and Au are laminated similarly to the plating layer 220.
  • the plating layer 252 of the wiring layer 240 and the plating layer 220 of the substrate 200 are collectively formed by the same process.
  • the first submount substrate 301 is supported on the top surface 213 of the raised portion 212 via the plating layer 220.
  • the first submount substrate 301 and the plating layer 220 are bonded by a metal bonding layer 341.
  • a metal plate 210 ′ is prepared as shown in FIG.
  • the metal plate 210 ′ is made of, for example, Al, Cu, Fe or the like.
  • Al is selected as the material of the metal plate 210 ′
  • the thickness of the metal plate 210 ′ is, for example, about 1.0 to 1.5 mm.
  • the metal plate 210 ′ has a main surface 211 ′ and a back surface 215 ′ that face in opposite directions in the z direction.
  • an insulating layer 230 ′ is formed so as to cover the main surface 211 ′.
  • the insulating layer 230 ′ is made of an insulating resin or an insulating material such as SiO 2 .
  • the thickness of the insulating layer 230 ′ is, for example, about 100 ⁇ m.
  • a base layer 251 ′ is formed so as to cover the insulating layer 230 ′.
  • the underlayer 251 ′ is formed, for example, by attaching a Cu foil on the insulating layer 230 ′.
  • the base layer 251 ' is patterned by using, for example, etching to form the base layer 251 as shown in FIG.
  • the base layer 251 may be formed by attaching a Cu foil that has been patterned in advance to the insulating layer 230 ′.
  • the metal plate 210 ′ is processed using the molds 610 and 620.
  • the mold 610 has a rectangular top surface.
  • the mold 620 has a rectangular recess 621.
  • the recess 621 is slightly larger than the upper surface of the mold 610 when viewed in the z direction.
  • a metal mold 610 is disposed on the back surface 215 ′ side of the metal plate 210 ′, and a metal mold 620 is disposed on the main surface 211 ′ side of the metal plate 210 ′. Then, the upper surface of the mold 610 is fitted into the metal plate 210 ′ by bringing the mold 610 and the mold 620 closer to each other. Thereby, the base material 210 which has the protruding part 212 and the depression part 216 is obtained. A portion where the upper surface of the mold 610 is in contact becomes a bottom surface 217 of the depressed portion 216. Further, the surface of the portion that has entered the recess 621 of the mold 620 corresponding to the mold 610 becomes the top surface 213.
  • the base layer 251 is in contact with a position where the concave portion 621 is avoided in the mold 620 and is not deformed.
  • the insulating layer 230 ′ is deformed into a shape along the raised portion 212.
  • the insulating layer 230 is formed as shown in FIG.
  • the process of removing a part of the insulating layer 230 ′ is performed using, for example, a squeegee 630.
  • the lower end edge of the squeegee 630 extends long in parallel to the y direction.
  • the squeegee 630 is moved in the x direction while the lower edge of the squeegee 630 is located at the same level as or slightly below the top surface 213 in the z direction.
  • the portion of the insulating layer 230 ′ located above the top surface 213 in the z direction is removed by the squeegee 630.
  • the insulating layer 230 having the opening 231 exposing only the top surface 213 is formed.
  • the base layer 251 is located sufficiently below the top surface 213 in the z direction, and thus does not contact the squeegee 630.
  • a plating layer 220 and a plating layer 252 are formed.
  • the plated layer 220 and the plated layer 252 are formed by, for example, electrolytic plating. Therefore, the plating layer 220 and the base layer 251 made of Ni, Pd, Au are formed so as to cover the top surface 213 and the base layer 251 of the base material 210, which is a conductor, and is not formed on the insulating layer 230. .
  • the substrate 200 including the base 210, the plating layer 220, the insulating layer 230, and the wiring layer 240 is obtained.
  • the LED light source module 108 is obtained.
  • the LED light source module 108 can be increased in brightness and color tone. Further, the submount substrate 301 is supported by the raised portion 212 without the insulating layer 230 interposed therebetween. Thereby, the heat transfer from the first LED chip 310 is not hindered by the insulating layer 230. Therefore, heat radiation from the first LED chip 310 can be promoted, and the brightness of the LED light source module 108 can be increased.
  • the wiring layer 240 is formed on the insulating layer 230 and is disposed at a position avoiding the raised portion 212 (base material 210). For this reason, it can avoid that the base material 210 and the wiring layer 240 which consist of a metal are unjustly conducted.
  • the top surface 213 of the raised portion 212 is exposed from the insulating layer 230, and portions other than the top surface 213 are covered with the insulating layer 230. Thereby, the operation
  • the raised portion 212 can be easily formed by pressing the mold 610 from the back surface 215 'side of the metal plate 210' as shown in FIG. There is an advantage that you can.
  • FIG. 29 shows an LED light source module according to the ninth embodiment of the present invention.
  • the LED light source module 109 of this embodiment does not include the submount substrate 301. For this reason, the first LED chip 310 is bonded to the plating layer 220 via the metal bonding layer 341.
  • the plating layer 220 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the base 210 side.
  • the Ni layer is formed directly on the top surface 213 and has a thickness of about 5 ⁇ m, for example.
  • the Pd layer is formed on the Ni layer and has a thickness of about 0.1 ⁇ m, for example.
  • the Au layer is formed on the Pd layer and has a thickness of about 0.1 ⁇ m, for example.
  • the plating layer 252 of the wiring layer 240 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the base layer 251 side. The configurations of these Ni layer, Pd layer, and Au layer are the same as those of the plating layer 220.
  • the LED light source module 109 can be increased in luminance and color tone.
  • the portion of the wiring layer 240 on which the first LED chip 310 is mounted can contact the sealing resin 420.
  • the wiring layer 240 is an Au layer whose surface layer has a relatively high resistance to sulfidation. Therefore, the wiring layer 240 can be prevented from being sulfided by the fluorescent material of the sealing resin 420.
  • FIG. 30 shows an LED light source module according to the tenth embodiment of the present invention.
  • the LED light source module 110 of this embodiment is used as a point light source of an electronic device by being configured as a relatively small module.
  • the LED light source modules 106 to 109 described above are different from those configured as bar-shaped light sources extending in the x direction.
  • the lead 270, the lead 280, the lead 291 and the lead 292 constitute a conduction support member referred to in the present invention.
  • the lead 270, the lead 280, the lead 291 and the lead 292 are made of metal, for example, a Cu plate as a base material is plated with Ni, Au or the like.
  • the lead 270 has a main surface 271 and a terminal portion 275.
  • the main surface 271 faces upward in the z direction.
  • the terminal portion 275 is used for mounting the LED light source module 110 on a circuit board (not shown).
  • the lead 292 has a main surface 292a.
  • the main surface 292a faces upward in the z direction and supports the second LED chip 320.
  • the other end of the wire 390 whose one end is bonded to the second LED chip 320 is bonded to the main surface 2271 of the lead 270.
  • the lead 292 has a terminal portion that protrudes from the case 500 to a portion not shown.
  • the lead 280 has a main surface 281 and a terminal portion 285.
  • the main surface 281 faces upward in the z direction and supports the first LED chip 310.
  • the terminal portion 285 is used for mounting the LED light source module 110 on a circuit board (not shown).
  • the lead 291 has a main surface 291a.
  • the main surface 291a faces upward in the z direction, and the other end of the wire 390 whose one end is bonded to the first LED chip 310 is bonded.
  • the case 500 covers a part of each of the lead 270, the lead 280, the lead 291 and the lead 292, and plays a role of relatively fixing them.
  • the LED light source module 111 of this embodiment includes a substrate 200, a first LED chip 310, a second LED chip 320, wires 391, a coating resin 410, a sealing resin 420, and a case 500.
  • the LED light source module 111 is configured as an elongated bar-shaped light source by arranging a plurality of first LED chips 310 and a plurality of second LED chips 320 on an elongated substrate 200.
  • Such an LED light source module is used to emit planar light from the light guide plate by being disposed at a position facing the side surface of the flat light guide plate. This planar light is used as a backlight of a liquid crystal display device, for example.
  • the coating resin 410 and the sealing resin 420 are omitted for convenience of understanding.
  • the substrate 200 as a whole has an elongated shape extending in the x direction.
  • a plurality of cases 500 are arranged along the longitudinal direction.
  • each case 500 has the same shape, and the configuration inside the case 500 described later is also the same.
  • the width direction dimension of the portion near the one end of the substrate 200 in the x direction is partially large.
  • a connector 790 is mounted on this portion. The connector 790 is used to make an electrical connection when the LED light source module 111 is incorporated into, for example, a liquid crystal display device.
  • the substrate 200 includes a base 210, an insulating layer 230, a wiring layer 240, and a resist layer 260.
  • the substrate 210 is a substantially strip-shaped metal plate that extends long in the x direction, and is made of, for example, Al, Cu, Fe, or the like.
  • Al is selected as the material of the substrate 210
  • the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm.
  • the substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
  • the insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 .
  • the thickness of the insulating layer 230 is, for example, about 100 ⁇ m.
  • the wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au.
  • the wiring layer 240 is formed on the insulating layer 230. In the present embodiment, the wiring layer 240 is made of only Cu, for example.
  • the wiring layer 240 has a first pad 241 and a second pad 242. The first pad 241 and the second pad 242 are spaced apart in the x direction. In the region outside the case 500, the wiring layer 240 is covered with a resist layer 260.
  • the resist layer 260 is, for example, white.
  • the case 500 is formed on the substrate 200 so as to surround the first LED chip 310 and the second LED chip 320, and is made of, for example, white resin.
  • the case 500 has a reflective surface 501.
  • the reflecting surface 501 is inclined with respect to the z direction, and reflects light emitted from the first LED chip 310 and the second LED chip 320 in the x direction and the y direction to be directed upward in the z direction. Fulfills the function.
  • one first LED chip 310 and one second LED chip 320 are arranged in an area surrounded by the case 500.
  • the first LED chip 310 has a lower surface electrode 311 and an upper surface electrode 312.
  • the lower surface electrode 311 faces downward in the z direction, which is the direction facing the main surface 211 of the substrate 200, and is made of, for example, an Au plating layer.
  • the upper surface electrode 312 faces upward in the z direction opposite to the lower surface electrode 311 and is made of, for example, an Au plating layer.
  • the lower surface electrode 311 corresponds to the first lower surface electrode referred to in the present invention
  • the upper surface electrode 312 corresponds to the first upper surface electrode referred to in the present invention.
  • the first LED chip 310 has, for example, a Si substrate positioned immediately above the lower surface electrode 311 and a semiconductor layer interposed between the Si substrate and the upper surface electrode 312.
  • This semiconductor layer is made of, for example, a GaAs-based semiconductor.
  • the lower surface electrode 311 functions as an n-type electrode
  • the upper surface electrode 312 functions as a p-type electrode. With such a configuration, the first LED chip 310 emits red light mainly upward in the z direction.
  • the lower surface electrode 311 is bonded to the first pad 241 of the wiring layer 240 via the metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 311 and the first pad 241.
  • the upper surface electrode 312 is provided at a position biased in plan view, and is biased toward the second LED chip 320 in the present embodiment.
  • the second LED chip 320 has a lower surface electrode 321 and an upper surface electrode 322.
  • the lower surface electrode 321 faces downward in the z direction, which is the direction facing the main surface 211 of the substrate 200, and is made of, for example, an Au plating layer.
  • the upper surface electrode 322 faces upward in the z direction opposite to the lower surface electrode 321 and is made of, for example, an Au plating layer.
  • the lower surface electrode 321 corresponds to the second lower surface electrode referred to in the present invention
  • the upper surface electrode 322 corresponds to the second upper surface electrode referred to in the present invention.
  • the second LED chip 320 has, for example, a Si substrate located immediately above the lower surface electrode 321 and a semiconductor layer interposed between the Si substrate and the upper surface electrode 322.
  • This semiconductor layer is made of, for example, a GaN-based semiconductor.
  • the lower surface electrode 321 functions as a p-type electrode
  • the upper surface electrode 322 functions as an n-type electrode. With such a configuration, the second LED chip 320 emits blue light mainly upward in the z direction.
  • the lower surface electrode 321 is bonded to the second pad 242 of the wiring layer 240 through the metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 321 and the second pad 242.
  • the upper surface electrode 322 is provided at a position that is biased in plan view. In the present embodiment, the top electrode 322 is biased toward the first LED chip 310 as shown in FIG.
  • the wire 391 connects the upper surface electrode 312 of the first LED chip 310 and the upper surface electrode 322 of the second LED chip 320, and is made of, for example, Au. More specifically, the first bonding portion of the wire 391 is formed on the upper surface electrode 322 of the second LED chip 320. On the other hand, the second bonding portion of the wire 391 is pressure-bonded to the upper surface electrode 312 of the first LED chip 310 against a previously formed Au bump. With such a configuration, the first LED chip 310 and the second LED chip 320 are connected in series via the wire 391.
  • the coating resin 410 covers the area surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320. Most or all of the side surfaces of the first LED chip 310 and the second LED chip 320 are covered with the coating resin 410.
  • the material of the coating resin 410 is not particularly limited, but in the present embodiment, it is made of a white resin such as a silicone resin mixed with titanium oxide.
  • the outer edge of the coating resin 410 is in contact with the reflection surface 501 of the case 500.
  • the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 in the z-direction upward is the main portion of any portion of the first LED chip 310 and the second LED chip 320.
  • the surface 211 is spaced upward in the z direction.
  • the coating resin 410 has a reflective surface 411.
  • the reflective surface 411 is gently inclined so as to move away from the base material 210 in the z direction from the vicinity of the upper surfaces of the first LED chip 310 and the second LED chip 320 toward the reflective surface 501 of the case 500.
  • the sealing resin 420 covers the first LED chip 310 and the second LED chip 320 in the region surrounded by the case 500.
  • the sealing resin 420 is made of a material in which a fluorescent material is mixed in, for example, a transparent epoxy resin or silicone resin. This fluorescent material emits green light when excited by blue light from the second LED chip 320, for example.
  • the fluorescent material contained in the sealing resin 420 is a sulfide-based fluorescent material.
  • the sulfide-based fluorescent material is one or more selected from the group consisting of calcium sulfide (CaS), zinc sulfide (ZnS), strontium sulfide (SrS), strontium thiogallate (SrGa2S4), and calcium thiogallate (CaGa2S4). Of sulfides.
  • the sulfide-based fluorescent material constituting the phosphor is a material doped with at least one element of Eu, Tb, Sm, Pr, Dy, and Tm.
  • the peak of the wavelength of the emitted light is 625 to 740 nm.
  • fluorescent materials that emit red light include calcium sulfide doped with europium (CaS: Eu), zinc sulfide doped with europium (ZnS: Eu), and strontium sulfide doped with europium (SrS: Eu). Consisting of either.
  • the peak of the wavelength of the emitted light is 500-565 nm.
  • the fluorescent material that emits green light is made of, for example, strontium thiogallate doped with europium (SrGa 2 S 4 : Eu) or calcium thiogallate doped with europium (CaGa 2 S 4 : Eu).
  • the element doped in the fluorescent material emitting red light or the fluorescent material emitting green light is not limited to Eu, and may be any of Tb, Sm, Pr, Dy, and Tm.
  • the upper electrode 312 of the first LED chip 310 and the upper electrode 322 of the second LED chip 320 are connected to each other by the wire 391. For this reason, it is not necessary to provide wires extending from the upper surface electrode 312 of the first LED chip 310 and the upper surface electrode 322 of the second LED chip 320 to the wiring layer 240. Thereby, the step of bonding wires to the wiring layer 240 is not necessary, and there is no need to provide a space for entering a bonding capillary or the like around the first LED chip 310 and the second LED chip 320. Therefore, the LED light source module 111 can be reduced in size.
  • the structure of the wiring layer 240 does not need to be a structure suitable for wire bonding. For this reason, it is not necessary to provide Au plating that covers the surface layer, which is a structure suitable for wire bonding. This is advantageous for simplification of the manufacturing process and cost reduction.
  • the coating resin 410 functions as a protective film. Thereby, for example, it is possible to suppress the sulfur gas or the like from reacting with the wiring layer 240.
  • the sealing resin 420 includes a sulfide-based fluorescent material, it is possible to prevent the wiring layer 240 from being deteriorated by the sulfide gas generated from the sealing resin 420.
  • luminance of the LED light source module 111 can be improved by reflecting the light of the 1st LED chip 310 and the 2nd LED chip 320 upwards by making the coating resin 410 white. Furthermore, there is an advantage that brighter white light can be emitted by employing the sealing resin 420 containing a sulfide-based fluorescent material.
  • the coating resin 410 reaches the vicinity of the upper end of the reflection surface 501 of the case 500, the light from the first LED chip 310 and the second LED chip 320 is difficult to reach the case 500.
  • the material of the case 500 that is required to have a relatively high strength is likely to be deteriorated by receiving light as compared with the material of the coating resin 410 that is not required to have a high strength. This deterioration can be suppressed by the coating resin 410.
  • a first LED chip 310, a second LED chip 320, a third LED chip 330, and wires 391 and 392 are arranged in a region surrounded by the case 500.
  • the first LED chip 310 has the same configuration as the LED light source module 111 described above.
  • the second LED chip 320 of the present embodiment has an upper surface electrode 322 and an upper surface electrode 329 as shown in FIG.
  • the upper surface electrode 329 corresponds to the additional second upper surface electrode referred to in the present invention, and is formed of, for example, an Au plating layer.
  • the upper surface electrode 322 functions as an n-type electrode
  • the upper surface electrode 329 functions as a p-type electrode.
  • a submount substrate 301 is provided between the substrate 200 and the second LED chip 320.
  • the submount substrate 301 is made of, for example, Si and has a thickness of, for example, about 300 ⁇ m.
  • the second LED chip 320 is indirectly supported on the main surface 211 of the base 210 via the submount substrate 301.
  • the submount substrate 301 and the second pad 242 of the wiring layer 240 are bonded via a metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, Ag.
  • the second LED chip 320 and the submount substrate 301 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
  • the third LED chip 330 has a lower surface electrode 331 and an upper surface electrode 332.
  • the lower surface electrode 331 faces downward in the z direction, which is the direction facing the main surface 211 of the substrate 200, and is made of, for example, an Au plating layer.
  • the upper surface electrode 332 faces upward in the z direction, which is opposite to the lower surface electrode 331, and is made of, for example, an Au plating layer.
  • the lower electrode 331 corresponds to the third lower electrode referred to in the present invention
  • the upper electrode 332 corresponds to the third upper electrode referred to in the present invention.
  • the third LED chip 330 has, for example, a Si substrate positioned immediately above the lower surface electrode 331 and a semiconductor layer interposed between the Si substrate and the upper surface electrode 332.
  • This semiconductor layer is made of, for example, a GaAs-based semiconductor.
  • the lower surface electrode 331 functions as a p-type electrode
  • the upper surface electrode 332 functions as an n-type electrode. With such a configuration, the third LED chip 330 emits red light mainly upward in the z direction.
  • the lower surface electrode 331 is bonded to the third pad 243 of the wiring layer 240 through the metal bonding layer 341.
  • the metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 331 and the third pad 243.
  • the upper surface electrode 332 is provided at a position that is biased in plan view, and is biased toward the second LED chip 320 in the present embodiment.
  • the wire 391 connects the upper surface electrode 312 of the first LED chip 310 and the upper surface electrode 322 of the second LED chip 320.
  • the wire 392 corresponds to an additional wire in the present invention, and connects the upper surface electrode 329 of the second LED chip 320 and the upper surface electrode 332 of the third LED chip 330.
  • the wiring layer 240 has a first pad 241, a second pad 242, and a third pad 243.
  • the first pad 241 and the third pad 243 form part of a power supply path for lighting the first LED chip 310, the second LED chip 320, and the third LED chip 330.
  • the second pad 242 does not form a power supply path, and is formed as a convenience for joining the submount substrate 301 on which the second LED chip 320 is mounted.
  • the covering resin 410 covers a portion excluding the first LED chip 310, the second LED chip 320, and the third LED chip 330 in the region surrounded by the case 500.
  • the coating resin 410 covers all or most of the side surfaces of the first LED chip 310, the second LED chip 320, and the third LED chip 330.
  • the LED light source module 112 can be reduced in size.
  • the first LED chip 310 that emits red light and the third LED chip 330 with the second LED chip 320 that emits blue light in between, it is possible to avoid a relative shortage of the amount of red light.
  • the three first LED chips 310, the second LED chip 320, and the third LED chip 330 are arranged in a region surrounded by one case 500, all of the wires 391 and 392 are wired.
  • Layer 240 is not bonded. This means that by providing a large number of LED chips, it is possible to reduce the size while increasing the luminance.
  • the base member 210 is formed with a raised portion 212 and a depressed portion 216.
  • the raised portion 212 is a portion raised above the main surface 211 in the z direction, and has a top surface 213 and an inclined surface 214 in the present embodiment.
  • the top surface 213 is the surface of the protruding portion 212 that protrudes most upward in the z direction, and is parallel to the main surface 211.
  • the top surface 213 has a rectangular shape.
  • the inclined surface 214 is connected to the main surface 211 and the top surface 213, and is inclined with respect to the xy plane.
  • the height of the raised portion 212 from the main surface 211 is, for example, 150 to 200 ⁇ m.
  • the depressed portion 216 is a portion that is recessed above the back surface 215 in the z direction, and overlaps the raised portion 212 when viewed in the z direction.
  • the depressed portion 216 has a bottom surface 217.
  • the bottom surface 217 is parallel to the back surface 215 and has a rectangular shape in the present embodiment.
  • the bottom surface 217 is included in the raised portion 212.
  • the bottom surface 217 and the top surface 213 have their outer edges almost overlapping each other when viewed in the z direction, or the outer edge of the bottom surface 217 is located slightly inside the outer edge of the top surface 213.
  • the depression depth from the back surface 215 of the depression 216 is, for example, 150 to 200 ⁇ m.
  • the plated layer 220 covers the top surface 213 of the raised portion 212 and is made of a metal such as Cu, Ni, Pd, or Au. In the present embodiment, the plating layer 220 is made of Cu.
  • a submount substrate 301 is bonded to the plating layer 220.
  • the wiring layer 240 has a structure in which a base layer 251 and a plating layer 252 are laminated.
  • the underlayer 251 is the same as the layer that has formed the wiring layer 240 in the LED light source modules 111 and 112 described above.
  • the plating layer 252 is laminated on the base layer 251 and is made of the same material as the plating layer 220.
  • the insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 .
  • An opening 231 is formed in the insulating layer 230.
  • the opening 231 is provided to expose at least a part of the raised portion 212, and in the present embodiment, the top surface 213 of the raised portion 212 is exposed.
  • the inclined surface 214 of the raised portion 212 is covered with the insulating layer 230.
  • the thickness of the insulating layer 230 is, for example, about 100 ⁇ m.
  • a metal plate 210 ′ is prepared.
  • the metal plate 210 ′ is made of, for example, Al, Cu, Fe or the like.
  • Al is selected as the material of the metal plate 210 ′
  • the thickness of the metal plate 210 ′ is, for example, about 1.0 to 1.5 mm.
  • the metal plate 210 ′ has a main surface 211 ′ and a back surface 215 ′ that face in opposite directions in the z direction.
  • an insulating layer 230 ′ is formed so as to cover the main surface 211 ′.
  • the insulating layer 230 ′ is made of an insulating resin or an insulating material such as SiO 2 .
  • the thickness of the insulating layer 230 ′ is, for example, about 100 ⁇ m.
  • a base layer 251 ′ is formed so as to cover the insulating layer 230 ′.
  • the underlayer 251 ′ is formed, for example, by forming a Cu plating layer on the insulating layer 230 ′ by electroless plating.
  • the base layer 251 ' is patterned by using, for example, etching to form the base layer 251 as shown in FIG.
  • the metal plate 210 ′ is processed using the molds 610 and 620.
  • the mold 610 has a rectangular top surface.
  • the mold 620 has a rectangular recess 621.
  • the recess 621 is slightly larger than the upper surface of the mold 610 when viewed in the z direction.
  • a metal mold 610 is disposed on the back surface 215 ′ side of the metal plate 210 ′, and a metal mold 620 is disposed on the main surface 211 ′ side of the metal plate 210 ′.
  • the upper surface of the mold 610 is fitted into the metal plate 210 ′ by bringing the mold 610 and the mold 620 closer to each other. Thereby, the base material 210 which has the protruding part 212 and the depression part 216 is obtained. A portion where the upper surface of the mold 610 is in contact becomes a bottom surface 217 of the depressed portion 216. Further, the surface of the portion that has entered the recess 621 of the mold 620 corresponding to the mold 610 becomes the top surface 213. At this time, in this embodiment, the base layer 251 is in contact with a position where the concave portion 621 is avoided in the mold 620 and is not deformed. The insulating layer 230 ′ is deformed into a shape along the raised portion 212.
  • the insulating layer 230 is formed as shown in FIG.
  • the process of removing a part of the insulating layer 230 ′ is performed using, for example, a squeegee 630.
  • the lower end edge of the squeegee 630 extends long in parallel to the y direction.
  • the squeegee 630 is moved in the x direction while the lower edge of the squeegee 630 is located at the same level as or slightly below the top surface 213 in the z direction.
  • the portion of the insulating layer 230 ′ located above the top surface 213 in the z direction is removed by the squeegee 630.
  • the insulating layer 230 having the opening 231 exposing only the top surface 213 is formed.
  • the base layer 251 is located sufficiently below the top surface 213 in the z direction, and thus does not contact the squeegee 630.
  • a plating layer 220 and a plating layer 252 are formed.
  • the plated layer 220 and the plated layer 252 are formed by, for example, electrolytic plating.
  • the plating layer 220 and the base layer 251 are formed so as to cover the top surface 213 and the base layer 251 of the base material 210 which is a conductor, and are not formed on the insulating layer 230.
  • the substrate 200 including the base 210, the plating layer 220, the insulating layer 230, and the wiring layer 240 is obtained.
  • the LED light source module 113 is obtained.
  • the LED light source module 113 can be downsized.
  • the second LED chip 320 is supported by the raised portion 212 without the insulating layer 230 interposed therebetween. Thereby, the heat transfer from the second LED chip 320 is not hindered by the insulating layer 230. Therefore, heat radiation from the second LED chip 320 can be promoted, and the brightness of the LED light source module 113 can be increased.
  • FIG. 46 shows an LED light source module according to the fourteenth embodiment of the present invention.
  • the LED light source module 114 of this embodiment is different from the LED light source module 113 described above in that the plating layer 220 is not provided and the wiring layer 240 is a single layer. That is, in the present embodiment, the plating process described with reference to FIG. 45 is omitted. Also according to such an embodiment, the LED light source module 114 can be downsized.
  • FIG. 47 shows an LED light source module according to the fifteenth embodiment of the present invention.
  • the LED light source module 115 of this embodiment is different from the LED light source module 113 described above in that it does not include the submount substrate 301. That is, the second LED chip 320 is bonded to the insulating layer 230 that covers the top surface 213 of the raised portion 212 of the substrate 210.
  • the height of the raised portion 212 is substantially the same as the height of the first LED chip 310 and the third LED chip 330. Also according to such an embodiment, the LED light source module 115 can be downsized.
  • FIG. 48 shows an LED light source module according to the sixteenth embodiment of the present invention.
  • the first LED chip 310 emits red light
  • the second LED chip 320 emits blue light
  • the third LED chip 330 emits green light.
  • the third LED chip 330 has a semiconductor layer made of, for example, a GaN-based semiconductor.
  • the sealing resin 420 is made of a transparent resin, and no fluorescent material is mixed therein.
  • the LED light source module 116 can be downsized. Further, white light can be generated by red light from the first LED chip 310, blue light from the second LED chip 320, and green light from the third LED chip 330.
  • the coating resin 410 is provided for the purpose of increasing the brightness. However, since there is no risk of deterioration due to the sulfide gas caused by the sealing resin 420, the configuration in which the coating resin 410 is omitted in this respect. It is good.
  • FIG. 49 shows an LED light source module according to the seventeenth embodiment of the present invention.
  • the LED light source module 117 of this embodiment is used as a point light source of an electronic device by being configured as a relatively small module.
  • the LED light source modules 111 to 116 described above are different from those configured as bar-shaped light sources extending in the x direction.
  • the point that the LED light source module 117 includes the first LED chip 310 and the second LED chip 320 is similar to the LED light source module 111 described above, but the configuration used as a point light source such as the LED light source module 117 is the above.
  • the configurations of the LED light source modules 112 to 116 may be applied as appropriate.
  • the conduction support member referred to in the present invention is constituted by the two leads 270 and the leads 280.
  • the lead 270 and the lead 280 are made of metal, for example, a Cu plate as a base material is plated with Ni, Au, or the like.
  • the lead 270 has a main surface 271 and a terminal portion 275.
  • the main surface 271 faces upward in the z direction and supports the first LED chip 310.
  • the terminal portion 275 is used for mounting the LED light source module 117 on a circuit board (not shown).
  • the lead 280 has a main surface 281 and a terminal portion 285.
  • the main surface 281 faces upward in the z direction and supports the second LED chip 320.
  • the terminal portion 285 is used for mounting the LED light source module 107 on a circuit board (not shown). Also according to such an embodiment, the LED light source module 117 can be downsized.
  • the LED light source module according to the present invention is not limited to the above-described embodiment.
  • the specific configuration of each part of the LED light source module according to the present invention can be varied in design in various ways.
  • the LED light source module is used as a point light source of an electronic device by being configured as a relatively small module, and an elongated bar light source by arranging a plurality of LED chips on an elongated conductive support member Used as a planar light source by arranging a plurality of LED chips on a conductive support member in a matrix.
  • an elongated bar light source by arranging a plurality of LED chips on an elongated conductive support member used as a planar light source by arranging a plurality of LED chips on a conductive support member in a matrix.
  • a planar light is emitted from the light guide plate by disposing the LED light source module at a position facing the side surface of the flat light guide plate.
  • the LED light source module functions as a light source of the liquid crystal display device by transmitting the planar light through the liquid crystal panel superimposed on the light guide plate.
  • the LED light source module functions as a backlight of the liquid crystal display device by arranging the liquid crystal panel and the LED light source module so as to overlap each other.
  • the LED light source module according to the present invention is used in various forms for various applications.
  • the coating resin 410 is not limited to a configuration made of a white resin, and a material capable of suppressing the light from the first LED chip 310 from being absorbed by the second LED chip 320 can be employed.
  • a material capable of suppressing the light from the first LED chip 310 from being absorbed by the second LED chip 320 can be employed.
  • the coating resin 410 is made of a material having a refractive index smaller than that of the sealing resin 420, when light travels from the sealing resin 420 to the coating resin 410, total reflection is performed at these interfaces. Can occur. Even with such a configuration, an effect of suppressing light absorption by the second LED chip 320 can be expected.
  • Appendix 1 A conduction support member having a main surface; First and second LED chips supported by the conduction support member on the main surface side and supplied with power via the conduction support member; A case supported by the conduction support member and surrounding the first and second LED chips; Sealing resin that covers the first and second LED chips in a region surrounded by the case, The wavelength of the light emitted from the second LED chip is longer than the wavelength of the light emitted from the first LED chip, A coating resin that is interposed between the sealing resin and the main surface of the conduction support member and covers at least a part of a side surface of the second LED chip that faces in a direction intersecting the direction in which the main surface faces.
  • the second LED chip has a lower surface electrode, a chip substrate, a semiconductor layer, and an upper surface electrode, The LED light source module according to appendix 1, wherein the coating resin covers at least a part of the chip substrate.
  • the LED light source module according to appendix 2 wherein the chip substrate is made of GaAs.
  • the lower surface electrode is bonded to the conductive support member via a conductive bonding material, The LED light source module according to appendix 2 or 3, wherein the upper surface electrode is electrically connected to the conduction support member via a wire.
  • the first LED chip emits blue light
  • the sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and from the wavelength of the light emitted from the second LED chip. 6.
  • (Appendix 12) A pedestal having a top surface located in a direction normal to the main surface from the main surface and the insulating layer of the substrate; The LED light source module according to any one of appendices 1 to 11, wherein the first LED chip is supported on the top surface of the pedestal portion.
  • (Appendix 13) The LED light source module according to appendix 12, wherein at least a part of the base portion excluding the top surface is covered with the coating resin.
  • (Appendix 14) A submount substrate interposed between the conductive support member and the first LED chip; The LED light source module according to appendix 12 or 13, wherein the pedestal portion is configured by the sub-mound substrate.
  • (Appendix 15) The LED light source module according to appendix 12 or 13, wherein the conduction support member includes a base material and a wiring layer formed on the base material.
  • the base material is made of metal, The LED light source module according to appendix 15, wherein the conduction support member has an insulating layer interposed between the base material and the wiring layer.
  • the base material has a raised portion raised from the main surface, The LED light source module according to appendix 16, wherein the pedestal portion is configured by the raised portion.
  • (Appendix 18) The LED light source module according to appendix 17, wherein the raised portion includes the top surface parallel to the main surface and an inclined surface connecting the top surface and the main surface.
  • (Appendix 19) The LED light source module according to appendix 17 or 18, wherein the insulating layer exposes the top surface of the raised portion.
  • (Appendix 21) The LED light source module according to appendix 20, wherein the depressed portion has a bottom surface that is parallel to the main surface.
  • (Appendix 22) The LED light source module according to appendix 21, wherein the bottom surface is included in the raised portion in the thickness direction view.
  • a conduction support member having a main surface; First and second LED chips supported by the main surface and supplied with power via the conduction support member, The first LED chip has a first lower surface electrode facing the main surface and a first upper surface electrode facing the opposite side of the first lower surface electrode, The second LED chip has a second upper surface electrode facing the same side as the first upper surface electrode of the first LED chip, An LED light source module comprising a wire connecting the first upper surface electrode of the first LED chip and the second upper surface electrode of the second LED chip.
  • the LED light source module according to appendix 23, wherein the conduction support member includes a base material and a wiring layer formed on the base material.
  • the base material is made of metal
  • (Appendix 28) Further comprising a third LED chip supported by the main surface and supplied with power via the conduction support member;
  • the third LED chip has a third lower surface electrode facing the main surface and a third upper surface electrode facing the opposite side of the third lower surface electrode, 28.
  • the LED light source module according to appendix 28 comprising a submount substrate interposed between the second LED chip and the conduction support member.
  • the LED according to appendix 35 comprising a coating resin that covers at least a part of an inner region that is a region surrounded by the reflection surface of the conduction support member and at least a part of a side surface of the first LED chip.
  • Light source module. (Appendix 37) 37.
  • Appendix 39 The portion of the joint portion between the coating resin and the case that is the most distant from the main surface of the base material is further away from the main surface than any portion of the first and second LED chips.
  • the LED light source module according to any one of 36 to 38.
  • the base material has a raised portion raised from the main surface, The insulating layer covers the main surface of the base material and exposes at least a part of the raised portion, The LED light source module according to appendix 25, wherein the second LED chip is supported by the raised portion.
  • the LED light source module according to appendix 40, wherein the raised portion has a top surface that is parallel to the main surface and an inclined surface that connects the top surface and the main surface.
  • the LED light source module according to appendix 41, wherein the insulating layer exposes the top surface of the raised portion.
  • Appendix 43 43.
  • the LED light source module according to appendix 42 wherein the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion in the thickness direction view.
  • (Appendix 44) 44 44.
  • the LED light source module according to appendix 43, wherein the depressed portion has a bottom surface that is parallel to the main surface.
  • the LED light source module according to appendix 44 wherein the bottom surface is included in the raised portion when viewed in the thickness direction.

Abstract

An LED light source module (101) is provided with: a substrate (200) which has a main surface (211); a first LED chip (310) and a second LED chip (320); a case which is supported by the substrate (200) and surrounds the first LED chip (310) and the second LED chip (320); and a sealing resin (420) which covers the first LED chip (310) and the second LED chip (320) in a region that is surrounded by the case. The wavelength of the light emitted from the second LED chip (320) is longer than the wavelength of the light emitted from the first LED chip (310). The second LED chip (320) has a second chip substrate (324), which is formed of a material that transmits the light from the first LED chip (310), and a second semiconductor layer (325) which is laminated on the chip substrate (324). Higher luminance and a wider array of colors can be achieved by this configuration.

Description

ＬＥＤ光源モジュールLED light source module
　本発明は、ＬＥＤ光源モジュールに関する。 The present invention relates to an LED light source module.
　図５０は、従来のＬＥＤ光源モジュールの一例を示している。同図に示されたＬＥＤ光源モジュール９００は、基板９１、ＬＥＤチップ９５、サブマウント基板９６、ケース９７および封止樹脂９９を備えている。ＬＥＤ光源モジュール９００は、比較的小型のモジュールとして構成されることにより、電子機器の点光源として用いられるもの、細長い基板９１に複数のＬＥＤチップ９５が配置されることにより細長いバー状光源として用いられるもの、基板９１に複数のＬＥＤチップ９５がマトリクス状に配置されることにより、面状光源として用いられるもの、などがある。 FIG. 50 shows an example of a conventional LED light source module. The LED light source module 900 shown in the figure includes a substrate 91, an LED chip 95, a submount substrate 96, a case 97, and a sealing resin 99. The LED light source module 900 is used as a point light source of an electronic device by being configured as a relatively small module, and is used as an elongated bar light source by disposing a plurality of LED chips 95 on an elongated substrate 91. And a plurality of LED chips 95 arranged in a matrix on the substrate 91 to be used as a planar light source.
　基板９１は、基材９２、絶縁層９３および配線層９４からなる。基材９２は、たとえばアルミなどからなる金属板である。絶縁層９３は、たとえば絶縁性樹脂からなり、基材９２の図中上面を覆っている。配線層９４は、絶縁層９３上に形成されており、ＬＥＤチップ９５への導通経路を形成している。ＬＥＤチップ９５は、半導体からなる複数の層が積層された構造を有し、サブマウント基板９６上に搭載されている。ＬＥＤチップ９５と配線層９４とはワイヤ９０を介して接続されている。サブマウント基板９６は、たとえばＳｉからなり、絶縁層９３に接合されている。ケース９７は、ＬＥＤチップ９５を囲んでおり、反射面９８を有する。封止樹脂９９は、ＬＥＤチップ９５を覆っている。 The substrate 91 includes a base material 92, an insulating layer 93, and a wiring layer 94. The base material 92 is a metal plate made of, for example, aluminum. The insulating layer 93 is made of, for example, an insulating resin and covers the upper surface of the base material 92 in the drawing. The wiring layer 94 is formed on the insulating layer 93 and forms a conduction path to the LED chip 95. The LED chip 95 has a structure in which a plurality of layers made of semiconductors are stacked, and is mounted on a submount substrate 96. The LED chip 95 and the wiring layer 94 are connected via a wire 90. The submount substrate 96 is made of, for example, Si and bonded to the insulating layer 93. The case 97 surrounds the LED chip 95 and has a reflective surface 98. The sealing resin 99 covers the LED chip 95.
　ＬＥＤ光源モジュール９００の高輝度化や色調の多彩化を図るには、ＬＥＤチップ９５の個数を増加させる方策がある。しかし、互いに仕様が異なるＬＥＤチップ９５をケース９７に囲まれた同一領域に配置することは、様々な問題を解決する必要がある。たとえば、あるＬＥＤチップ９５が、他のＬＥＤチップ９５の光を過度に吸収してしまうと、所望の高輝度化や色調の多彩化が阻害されてしまう。 In order to increase the brightness and diversify the color tone of the LED light source module 900, there is a measure to increase the number of LED chips 95. However, arranging the LED chips 95 having different specifications in the same region surrounded by the case 97 needs to solve various problems. For example, if a certain LED chip 95 excessively absorbs the light of the other LED chip 95, the desired increase in luminance and color diversification are hindered.
　また、ＬＥＤ光源モジュール９００においては、ワイヤ９０を基板９１の配線層９４にボンディングするためのスペースが必要である。たとえば、ＬＥＤ光源モジュール９００の高輝度化を目的として複数のＬＥＤチップ９５を備える構成とした場合、配線層９４に対するワイヤ９０のボンディング箇所が増加する。このため、ＬＥＤ光源モジュール９００の小型化が阻害されるという問題がある。 Further, in the LED light source module 900, a space for bonding the wire 90 to the wiring layer 94 of the substrate 91 is necessary. For example, when the LED light source module 900 is configured to include a plurality of LED chips 95 for the purpose of increasing the brightness, the number of bonding points of the wires 90 to the wiring layer 94 increases. For this reason, there exists a problem that size reduction of the LED light source module 900 is inhibited.
特開２００７－２０８１５０号公報JP 2007-208150 A
　本発明は、上記した事情のもとで考え出されたものであって、高輝度化や色調の多彩化を図ることが可能なＬＥＤ光源モジュールを提供することをその課題とする。また、本発明は、小型化を図ることが可能なＬＥＤ光源モジュールを提供することをその課題とする。 The present invention has been conceived under the circumstances described above, and an object thereof is to provide an LED light source module capable of achieving high brightness and diversified color tone. Moreover, this invention makes it the subject to provide the LED light source module which can achieve size reduction.
　本発明の第一の側面によって提供されるＬＥＤ光源モジュールは、主面を有する導通支持部材と、上記主面側において上記導通支持部材に支持され、かつ上記導通支持部材を経由して電力が供給される第一および第二ＬＥＤチップと、上記導通支持部材に支持され、上記第一および第二ＬＥＤチップを囲むケースと、上記ケースに囲まれた領域において上記第一および第二ＬＥＤチップを覆う封止樹脂と、を備えており、上記第二ＬＥＤチップから発せられる光の波長は、上記第一ＬＥＤチップから発せられる光の波長よりも長く、上記第二ＬＥＤチップは、上記第一ＬＥＤチップからの光を透過する材質からなる第二チップ基板と、このチップ基板上に積層された第二半導体層と、を有する。 The LED light source module provided by the first aspect of the present invention includes a conduction support member having a main surface, and is supported by the conduction support member on the main surface side, and power is supplied via the conduction support member. The first and second LED chips, a case supported by the conductive support member and surrounding the first and second LED chips, and a region surrounded by the case covering the first and second LED chips A wavelength of light emitted from the second LED chip is longer than a wavelength of light emitted from the first LED chip, and the second LED chip is the first LED chip. A second chip substrate made of a material that transmits light from the first semiconductor layer, and a second semiconductor layer stacked on the chip substrate.
　本発明の好ましい実施の形態においては、上記第二チップ基板は、サファイアからなる。 In a preferred embodiment of the present invention, the second chip substrate is made of sapphire.
　本発明の好ましい実施の形態においては、上記第二チップ基板は、上記主面が向く方向において上記第一ＬＥＤチップと重なる位置にある。 In a preferred embodiment of the present invention, the second chip substrate is in a position overlapping the first LED chip in the direction in which the main surface faces.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップは、赤色光を発する。 In a preferred embodiment of the present invention, the second LED chip emits red light.
　本発明の好ましい実施の形態においては、上記第一ＬＥＤチップは、青色光を発する。 In a preferred embodiment of the present invention, the first LED chip emits blue light.
　本発明の好ましい実施の形態においては、上記第一ＬＥＤチップは、サファイアまたはＧａＮからなる第一チップ基板と、この第一チップ基板上に積層された第一半導体層と、を有する。 In a preferred embodiment of the present invention, the first LED chip has a first chip substrate made of sapphire or GaN, and a first semiconductor layer stacked on the first chip substrate.
　本発明の好ましい実施の形態においては、上記第二チップ基板は、上記主面が向く方向において上記第一チップ基板と重なる位置にある。 In a preferred embodiment of the present invention, the second chip substrate is in a position overlapping the first chip substrate in the direction in which the main surface is directed.
　本発明の好ましい実施の形態においては、上記第一ＬＥＤチップは、上記第一半導体層上に形成された２つの第一上面電極を有する。 In a preferred embodiment of the present invention, the first LED chip has two first upper surface electrodes formed on the first semiconductor layer.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップは、上記第二半導体層上に形成された２つの第二上面電極を有する。 In a preferred embodiment of the present invention, the second LED chip has two second upper surface electrodes formed on the second semiconductor layer.
　本発明の好ましい実施の形態においては、上記封止樹脂は、上記第一ＬＥＤチップから発せられる光によって励起されることにより、上記第一ＬＥＤチップから発せられる光の波長とは異なり、かつ上記第二ＬＥＤチップから発せられる光の波長よりも短い波長の光を発する蛍光材料を含む。 In a preferred embodiment of the present invention, the sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and the first resin It includes a fluorescent material that emits light having a wavelength shorter than that of light emitted from the two LED chips.
　本発明の好ましい実施の形態においては、上記蛍光材料は、硫化物からなる。 In a preferred embodiment of the present invention, the fluorescent material is made of sulfide.
　本発明の好ましい実施の形態においては、上記蛍光材料は、緑色光を発する。 In a preferred embodiment of the present invention, the fluorescent material emits green light.
　本発明の好ましい実施の形態においては、上記第一ＬＥＤチップと上記導通支持部材との間に介在する第一サブマウント基板と、上記第二ＬＥＤチップと上記導通支持部材との間に介在する第二サブマウント基板と、上記封止樹脂と上記導通支持部材の上記主面との間に介在するとともに、上記第一サブマウント基板および上記第二サブマウント基板それぞれのうち上記主面が向く方向と交差する方向を向く側面の少なくとも一部を覆う被覆樹脂と、をさらに備える。 In a preferred embodiment of the present invention, a first submount substrate interposed between the first LED chip and the conduction support member, and a first submount substrate interposed between the second LED chip and the conduction support member. A second submount substrate, and a direction in which the main surface of each of the first submount substrate and the second submount substrate faces is interposed between the sealing resin and the main surface of the conduction support member. And a covering resin covering at least a part of the side surface facing the intersecting direction.
　本発明の好ましい実施の形態においては、上記被覆樹脂は、白色である。 In a preferred embodiment of the present invention, the coating resin is white.
　本発明の好ましい実施の形態においては、上記被覆樹脂と上記ケースとの接合部分のうち上記主面から最も離間した部位は、上記第一および第二ＬＥＤチップのいずれの部位よりも上記主面から離間している。 In preferable embodiment of this invention, the site | part most spaced apart from the said main surface among the junction parts of the said coating resin and the said case is from the said main surface rather than any site | part of said 1st and 2nd LED chip. It is separated.
　本発明の好ましい実施の形態においては、上記導通支持部材は、基材とこの基材上に形成された配線層とを有する。 In a preferred embodiment of the present invention, the conduction support member has a base material and a wiring layer formed on the base material.
　本発明の好ましい実施の形態においては、上記基材は、金属からなり、上記導通支持部材は、上記基材と上記配線層との間に介在する絶縁層を有する。 In a preferred embodiment of the present invention, the base material is made of metal, and the conductive support member has an insulating layer interposed between the base material and the wiring layer.
　本発明の好ましい実施の形態においては、上記基材は、上記主面よりも隆起した隆起部を有し、上記第一および上記第二ＬＥＤチップは、上記隆起部によって支持されている。 In a preferred embodiment of the present invention, the base material has a raised portion that is raised from the main surface, and the first and second LED chips are supported by the raised portion.
　本発明の好ましい実施の形態においては、上記隆起部は、上記主面と平行である頂面と、この頂面および上記主面を繋ぐ傾斜面と、を有しており、上記第一および上記第二ＬＥＤチップは、上記頂面に支持されている。 In a preferred embodiment of the present invention, the raised portion has a top surface parallel to the main surface, and an inclined surface connecting the top surface and the main surface. The second LED chip is supported on the top surface.
　本発明の好ましい実施の形態においては、上記絶縁層は、上記隆起部のうち上記頂面を露出させている。 In a preferred embodiment of the present invention, the insulating layer exposes the top surface of the raised portion.
　本発明の好ましい実施の形態においては、上記基材は、その厚さ方向において上記隆起部の反対側に位置し、上記厚さ方向視において上記隆起部に重なる陥没部を有する。 In a preferred embodiment of the present invention, the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
　本発明の好ましい実施の形態においては、上記陥没部は、上記主面と平行である底面を有する。 In a preferred embodiment of the present invention, the depressed portion has a bottom surface that is parallel to the main surface.
　本発明の好ましい実施の形態においては、上記底面は、上記厚さ方向視において上記隆起部に内包されている。 In a preferred embodiment of the present invention, the bottom surface is included in the raised portion in the thickness direction view.
　本発明の第二の側面によって提供されるＬＥＤ光源モジュールは、主面を有する導通支持部材と、上記主面側において上記導通支持部材に支持され、かつ上記導通支持部材を経由して電力が供給される第一および第二ＬＥＤチップと、上記導通支持部材に支持され、上記第一および第二ＬＥＤチップを囲むケースと、上記ケースに囲まれた領域において上記第一および第二ＬＥＤチップを覆う封止樹脂と、を備えており、上記第二ＬＥＤチップから発せられる光の波長は、上記第一ＬＥＤチップから発せられる光の波長よりも長く、上記封止樹脂と上記導通支持部材の上記主面との間に介在するとともに、上記第二ＬＥＤチップのうち上記主面が向く方向と交差する方向を向く側面の少なくとも一部を覆う被覆樹脂をさらに備える。 The LED light source module provided by the second aspect of the present invention includes a conduction support member having a main surface, and is supported by the conduction support member on the main surface side, and power is supplied via the conduction support member. The first and second LED chips, a case supported by the conductive support member and surrounding the first and second LED chips, and a region surrounded by the case covering the first and second LED chips A wavelength of light emitted from the second LED chip is longer than a wavelength of light emitted from the first LED chip, and the main resin of the conductive support member And a coating resin that covers at least a part of the side surface of the second LED chip that faces the direction intersecting the main surface of the second LED chip.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップは、下面電極、チップ基板、半導体層および上面電極を有し、上記被覆樹脂は、上記チップ基板の少なくとも一部を覆っている。 In a preferred embodiment of the present invention, the second LED chip has a lower surface electrode, a chip substrate, a semiconductor layer and an upper surface electrode, and the coating resin covers at least a part of the chip substrate.
　本発明の好ましい実施の形態においては、上記チップ基板は、ＧａＡｓからなる。 In a preferred embodiment of the present invention, the chip substrate is made of GaAs.
　本発明の好ましい実施の形態においては、上記下面電極は、導通接合材を介して上記導通支持部材に接合されており、上記上面電極は、ワイヤを介して上記導通支持部材に導通している。 In a preferred embodiment of the present invention, the lower surface electrode is bonded to the conductive support member via a conductive bonding material, and the upper surface electrode is connected to the conductive support member via a wire.
　本発明の好ましい実施の形態においては、上記第一ＬＥＤチップは、青色光を発し、上記第二ＬＥＤチップは、赤色光を発する。 In a preferred embodiment of the present invention, the first LED chip emits blue light, and the second LED chip emits red light.
　本発明の好ましい実施の形態においては、上記封止樹脂は、上記第一ＬＥＤチップから発せられる光によって励起されることにより、上記第一ＬＥＤチップから発せられる光の波長とは異なり、かつ上記第二ＬＥＤチップから発せられる光の波長よりも短い波長の光を発する蛍光材料を含む。 In a preferred embodiment of the present invention, the sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and the first resin It includes a fluorescent material that emits light having a wavelength shorter than that of light emitted from the two LED chips.
　本発明の好ましい実施の形態においては、上記蛍光材料は、硫化物からなる。 In a preferred embodiment of the present invention, the fluorescent material is made of sulfide.
　本発明の好ましい実施の形態においては、上記蛍光材料は、緑色光を発する。 In a preferred embodiment of the present invention, the fluorescent material emits green light.
　本発明の好ましい実施の形態においては、上記被覆樹脂は、白色である。 In a preferred embodiment of the present invention, the coating resin is white.
　本発明の好ましい実施の形態においては、上記被覆樹脂は、上記封止樹脂よりも屈折率が小である。 In a preferred embodiment of the present invention, the coating resin has a refractive index smaller than that of the sealing resin.
　本発明の好ましい実施の形態においては、上記被覆樹脂と上記ケースとの接合部分のうち上記主面から最も離間した部位は、上記第一および第二ＬＥＤチップのいずれの部位よりも上記主面から離間している。 In preferable embodiment of this invention, the site | part most spaced apart from the said main surface among the junction parts of the said coating resin and the said case is from the said main surface rather than any site | part of said 1st and 2nd LED chip. It is separated.
　本発明の好ましい実施の形態においては、上記基板の上記主面および上記絶縁層よりも上記主面の法線方向に位置する頂面を有する台座部を備えており、上記第一ＬＥＤチップは、上記台座部の上記頂面に支持されている。 In a preferred embodiment of the present invention, the first LED chip comprises a pedestal portion having a top surface located in a normal direction of the main surface with respect to the main surface and the insulating layer of the substrate, It is supported on the top surface of the pedestal.
　本発明の好ましい実施の形態においては、上記台座部のうち上記頂面を除く部位の少なくとも一部が、上記被覆樹脂によって覆われている。 In a preferred embodiment of the present invention, at least a part of the pedestal portion excluding the top surface is covered with the coating resin.
　本発明の好ましい実施の形態においては、上記導通支持部材と上記第一ＬＥＤチップとの間に介在するサブマウント基板を備えており、上記台座部は、上記サブマウンド基板によって構成されている。 In a preferred embodiment of the present invention, a submount substrate interposed between the conduction support member and the first LED chip is provided, and the pedestal portion is constituted by the submount substrate.
　本発明の好ましい実施の形態においては、上記導通支持部材は、基材とこの基材上に形成された配線層とを有する。 In a preferred embodiment of the present invention, the conduction support member has a base material and a wiring layer formed on the base material.
　本発明の好ましい実施の形態においては、上記基材は、金属からなり、上記導通支持部材は、上記基材と上記配線層との間に介在する絶縁層を有する。 In a preferred embodiment of the present invention, the base material is made of metal, and the conductive support member has an insulating layer interposed between the base material and the wiring layer.
　本発明の好ましい実施の形態においては、上記基材は、上記主面よりも隆起した隆起部を有し、上記台座部は、上記隆起部によって構成されている。 In a preferred embodiment of the present invention, the base material has a raised portion that is raised from the main surface, and the pedestal portion is constituted by the raised portion.
　本発明の好ましい実施の形態においては、上記隆起部は、上記主面と平行である上記頂面と、この頂面および上記主面を繋ぐ傾斜面と、を有する。 In a preferred embodiment of the present invention, the raised portion has the top surface parallel to the main surface and an inclined surface connecting the top surface and the main surface.
　本発明の好ましい実施の形態においては、上記絶縁層は、上記隆起部のうち上記頂面を露出させている。 In a preferred embodiment of the present invention, the insulating layer exposes the top surface of the raised portion.
　本発明の好ましい実施の形態においては、上記基材は、その厚さ方向において上記隆起部の反対側に位置し、上記厚さ方向視において上記隆起部に重なる陥没部を有する。 In a preferred embodiment of the present invention, the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
　本発明の好ましい実施の形態においては、上記陥没部は、上記主面と平行である底面を有する。 In a preferred embodiment of the present invention, the depressed portion has a bottom surface that is parallel to the main surface.
　本発明の好ましい実施の形態においては、上記底面は、上記厚さ方向視において上記隆起部に内包されている。 In a preferred embodiment of the present invention, the bottom surface is included in the raised portion in the thickness direction view.
　本発明の第三の側面によって提供されるＬＥＤ光源モジュールは、主面を有する導通支持部材と、上記主面に支持され、かつ上記導通支持部材を経由して電力が供給される第一および第二ＬＥＤチップと、を備えており、上記第一ＬＥＤチップは、上記主面と対向する方向を向く第一下面電極およびこの第一下面電極とは反対側を向く第一上面電極を有しており、上記第二ＬＥＤチップは、上記第一ＬＥＤの上記第一上面電極と同じ側を向く第二上面電極を有しており、上記第一ＬＥＤチップの上記第一上面電極と上記第二ＬＥＤチップの上記第二上面電極とを接続するワイヤを備える。 The LED light source module provided by the third aspect of the present invention includes a conduction support member having a main surface, and first and first powers supported by the main surface and supplied with power via the conduction support member. Two first LED chips, wherein the first LED chip has a first lower surface electrode facing the main surface and a first upper surface electrode facing the first lower surface electrode. The second LED chip has a second upper surface electrode facing the same side as the first upper surface electrode of the first LED, and the first upper surface electrode of the first LED chip and the second LED A wire connecting the second upper surface electrode of the chip is provided.
　本発明の好ましい実施の形態においては、上記導通支持部材は、基材とこの基材上に形成された配線層とを有する。 In a preferred embodiment of the present invention, the conduction support member has a base material and a wiring layer formed on the base material.
　本発明の好ましい実施の形態においては、上記基材は、金属からなり、上記導通支持部材は、上記基材と上記配線層との間に介在する絶縁層を有する。 In a preferred embodiment of the present invention, the base material is made of metal, and the conductive support member has an insulating layer interposed between the base material and the wiring layer.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップは、上記第一ＬＥＤチップの上記第一下面電極と同じ側を向く第二下面電極を有する。 In a preferred embodiment of the present invention, the second LED chip has a second lower surface electrode facing the same side as the first lower surface electrode of the first LED chip.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップは、上記第二上面電極と同じ側を向く追加の第二上面電極を有する。 In a preferred embodiment of the present invention, the second LED chip has an additional second upper surface electrode facing the same side as the second upper surface electrode.
　本発明の好ましい実施の形態においては、上記主面に支持され、かつ上記導通支持部材を経由して電力が供給される第三ＬＥＤチップをさらに備えており、上記第三ＬＥＤチップは、上記主面と対向する方向を向く第三下面電極およびこの第三下面電極とは反対側を向く第三上面電極を有しており、上記第二ＬＥＤチップの上記追加の第二上面電極と上記第三ＬＥＤチップの上記第三上面電極とを接続する追加のワイヤを備えている。 In a preferred embodiment of the present invention, the battery pack further includes a third LED chip supported on the main surface and supplied with electric power via the conduction support member. A third lower surface electrode facing the surface and a third upper surface electrode facing away from the third lower surface electrode, and the additional second upper surface electrode of the second LED chip and the third upper surface electrode. An additional wire is provided to connect the third upper surface electrode of the LED chip.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップと上記導通支持部材との間に介在するサブマウント基板を備える。 In a preferred embodiment of the present invention, a submount substrate interposed between the second LED chip and the conduction support member is provided.
　本発明の好ましい実施の形態においては、上記第一および第二ＬＥＤチップを覆うとともに蛍光材料を含む封止樹脂をさらに備える。 In a preferred embodiment of the present invention, a sealing resin that covers the first and second LED chips and includes a fluorescent material is further provided.
　本発明の好ましい実施の形態においては、上記第二ＬＥＤチップは、青色光を発する。 In a preferred embodiment of the present invention, the second LED chip emits blue light.
　本発明の好ましい実施の形態においては、上記第一ＬＥＤチップは、赤色光を発する。 In a preferred embodiment of the present invention, the first LED chip emits red light.
　本発明の好ましい実施の形態においては、上記蛍光材料は、青色光によって励起されることにより緑色光を発する。 In a preferred embodiment of the present invention, the fluorescent material emits green light when excited by blue light.
　本発明の好ましい実施の形態においては、上記蛍光材料は、硫化物からなる。 In a preferred embodiment of the present invention, the fluorescent material is made of sulfide.
　本発明の好ましい実施の形態においては、上記導通支持部材に支持されており、かつ上記第一および第二ＬＥＤチップを囲む反射面を有するケースをさらに備えている。 In a preferred embodiment of the present invention, there is further provided a case which is supported by the conduction support member and has a reflection surface surrounding the first and second LED chips.
　本発明の好ましい実施の形態においては、上記導通支持部材のうち上記反射面に囲まれた領域である内部領域の少なくとも一部と、上記第一ＬＥＤの側面の少なくとも一部と、を覆う被覆樹脂を備える。 In a preferred embodiment of the present invention, a coating resin that covers at least a part of an inner region that is a region surrounded by the reflection surface of the conduction support member and at least a part of a side surface of the first LED. Is provided.
　本発明の好ましい実施の形態においては、上記被覆樹脂は、上記配線層のうち上記内部領域において上記第一および上記第二ＬＥＤチップから露出した部分を覆っている。 In a preferred embodiment of the present invention, the coating resin covers portions of the wiring layer exposed from the first and second LED chips in the internal region.
　本発明の好ましい実施の形態においては、上記被覆樹脂は、白色である。 In a preferred embodiment of the present invention, the coating resin is white.
　本発明の好ましい実施の形態においては、上記被覆樹脂と上記ケースとの接合部分のうち上記基材の上記主面から最も離間した部位は、上記第一および第二ＬＥＤチップのいずれの部位よりも上記主面から離間している。 In preferable embodiment of this invention, the site | part most spaced apart from the said main surface of the said base material among the junction parts of the said coating resin and the said case is rather than any site | part of said 1st and 2nd LED chip. It is separated from the main surface.
　本発明の好ましい実施の形態においては、上記基材は、上記主面よりも隆起した隆起部を有しており、上記絶縁層は、上記基材の上記主面を覆うとともに、上記隆起部の少なくとも一部を露出させており、上記第二ＬＥＤチップは、上記隆起部に支持されている。 In preferable embodiment of this invention, the said base material has the protruding part which protruded rather than the said main surface, and while the said insulating layer covers the said main surface of the said base material, of the said protruding part At least a portion is exposed, and the second LED chip is supported by the raised portion.
　本発明の好ましい実施の形態においては、上記隆起部は、上記主面と平行である頂面と、この頂面および上記主面を繋ぐ傾斜面と、を有する。 In a preferred embodiment of the present invention, the raised portion has a top surface parallel to the main surface and an inclined surface connecting the top surface and the main surface.
　本発明の好ましい実施の形態においては、上記絶縁層は、上記隆起部のうち上記頂面を露出させている。 In a preferred embodiment of the present invention, the insulating layer exposes the top surface of the raised portion.
　本発明の好ましい実施の形態においては、上記基材は、その厚さ方向において上記隆起部の反対側に位置し、上記厚さ方向視において上記隆起部に重なる陥没部を有する。 In a preferred embodiment of the present invention, the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
　本発明の好ましい実施の形態においては、上記陥没部は、上記主面と平行である底面を有する。 In a preferred embodiment of the present invention, the depressed portion has a bottom surface that is parallel to the main surface.
　本発明の好ましい実施の形態においては、上記底面は、上記厚さ方向視において上記隆起部に内包されている。 In a preferred embodiment of the present invention, the bottom surface is included in the raised portion in the thickness direction view.
　本発明のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。 Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.
本発明の第一実施形態に基づくＬＥＤ光源モジュールを示す平面図である。It is a top view which shows the LED light source module based on 1st embodiment of this invention. 図１のＬＥＤ光源モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the LED light source module of FIG. 図２のＩＩＩ－ＩＩＩ線に沿う要部断面図である。FIG. 3 is a cross-sectional view of a principal part taken along line III-III in FIG. 2. 図１のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 図１のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 本発明の第二実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 2nd embodiment of this invention. 図６のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 図６のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図６のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図６のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図６のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図６のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 本発明の第三実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 3rd embodiment of this invention. 本発明の第四実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 4th embodiment of this invention. 本発明の第五実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 5th embodiment of this invention. 本発明の第六実施形態に基づくＬＥＤ光源モジュールを示す平面図である。It is a top view which shows the LED light source module based on 6th embodiment of this invention. 図１６のＬＥＤ光源モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the LED light source module of FIG. 図１７のＸＶＩＩＩ－ＸＶＩＩＩ線に沿う要部断面図である。FIG. 18 is an essential part cross-sectional view along the line XVIII-XVIII in FIG. 17. 図１６のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 図１６のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 本発明の第七実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 7th embodiment of this invention. 本発明の第八実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 8th embodiment of this invention. 図２２のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 図２２のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図２２のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図２２のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図２２のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図２２のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 本発明の第九実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 9th embodiment of this invention. 本発明の第十実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 10th Embodiment of this invention. 本発明の第十一実施形態に基づくＬＥＤ光源モジュールを示す平面図である。It is a top view which shows the LED light source module based on 11th embodiment of this invention. 図３１のＬＥＤ光源モジュールを示す要部平面図である。It is a principal part top view which shows the LED light source module of FIG. 図３２のＸＸＸＩＩＩ－ＸＸＸＩＩＩ線に沿う要部断面図である。FIG. 33 is a main part sectional view taken along the line XXXIII-XXXIII in FIG. 32; 図３１のＬＥＤ光源モジュールを示す要部拡大断面図である。FIG. 32 is an enlarged cross-sectional view of a main part showing the LED light source module of FIG. 31. 図３１のＬＥＤ光源モジュールを示す要部拡大断面図である。FIG. 32 is an enlarged cross-sectional view of a main part showing the LED light source module of FIG. 本発明の第十二実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 12th embodiment of this invention. 図３６のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 図３６のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 本発明の第十三実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 13th embodiment of this invention. 図３９のＬＥＤ光源モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the LED light source module of FIG. 図３９のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図３９のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図３９のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図３９のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 図３９のＬＥＤ光源モジュールの製造方法の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the manufacturing method of the LED light source module of FIG. 本発明の第十四実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 14th embodiment of this invention. 本発明の第十五実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 15th embodiment of this invention. 本発明の第十六実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 16th embodiment of this invention. 本発明の第十七実施形態に基づくＬＥＤ光源モジュールを示す要部断面図である。It is principal part sectional drawing which shows the LED light source module based on 17th embodiment of this invention. 従来のＬＥＤ光源モジュールの一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the conventional LED light source module.
　以下、本発明の好ましい実施の形態につき、図面を参照して具体的に説明する。 Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.
　図１～図５は、本発明の第一実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０１は、基板２００、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０、被覆樹脂４１０、封止樹脂４２０、ケース５００、複数の単機能素子７１０およびコネクタ７９０を備えている。ＬＥＤ光源モジュール１０１は、細長い基板２００に複数の第一ＬＥＤチップ３１０および複数の第二ＬＥＤチップ３２０が配置されることにより細長いバー状光源として構成されている。このようなＬＥＤ光源モジュールは、平板状の導光板の側面に正対する位置に配置されることにより、この導光板から面状光を出射するために用いられる。この面状光は、たとえば液晶表示装置のバックライトとして利用される。後述する構成により、ＬＥＤ光源モジュール１０１は、白色光を出射する。 1 to 5 show an LED light source module according to the first embodiment of the present invention. The LED light source module 101 of this embodiment includes a substrate 200, a first LED chip 310, a second LED chip 320, a coating resin 410, a sealing resin 420, a case 500, a plurality of single function elements 710, and a connector 790. . The LED light source module 101 is configured as an elongated bar light source by arranging a plurality of first LED chips 310 and a plurality of second LED chips 320 on an elongated substrate 200. Such an LED light source module is used to emit planar light from the light guide plate by being disposed at a position facing the side surface of the flat light guide plate. This planar light is used as a backlight of a liquid crystal display device, for example. With the configuration described later, the LED light source module 101 emits white light.
　図１は、ＬＥＤ光源モジュール１０１の平面図であり、図２は、要部拡大平面図である。図３は、図２のＩＩＩ－ＩＩＩ線に沿うｚｘ平面における断面図である。図４は、主に第一ＬＥＤチップ３１０を示す要部拡大断面図であり、図５は、主に第二ＬＥＤチップ３２０を示す要部拡大断面図である。なお、図２においては、理解の便宜上、被覆樹脂４１０および封止樹脂４２０を省略している。 FIG. 1 is a plan view of the LED light source module 101, and FIG. 2 is an enlarged plan view of a main part. FIG. 3 is a cross-sectional view in the zx plane along the line III-III in FIG. 4 is an enlarged cross-sectional view of the main part mainly showing the first LED chip 310, and FIG. 5 is an enlarged cross-sectional view of the main part mainly showing the second LED chip 320. In FIG. 2, the coating resin 410 and the sealing resin 420 are omitted for convenience of understanding.
　図１に示すように、基板２００は、全体としてｘ方向に長く延びる細長形状とされている。この長手方向に沿って、複数のケース５００が配置されている。本実施形態においては、それぞれのケース５００は同一形状であり、後述するケース５００の内部における構成も同一である。 As shown in FIG. 1, the substrate 200 as a whole has an elongated shape extending long in the x direction. A plurality of cases 500 are arranged along the longitudinal direction. In the present embodiment, each case 500 has the same shape, and the configuration inside the case 500 described later is also the same.
　図２に示すように、基板２００のｘ方向一端寄り部分は、幅方向寸法が部分的に大となっている。この部分に、複数の単機能素子７１０およびコネクタ７９０が搭載されている。各単機能素子７１０は、たとえばツェナーダイオードあるいはチップ抵抗器などである。単機能素子７１０としてツェナーダイオードを採用する場合、単機能素子７１０は、たとえば第一ＬＥＤチップ３１０もしくは第二ＬＥＤチップ３２０に過大な逆電圧が印加されることを回避する機能を果たす。単機能素子７１０としてチップ抵抗器を採用する場合、単機能素子７１０は、後述する第一ＬＥＤチップ３１０と第二ＬＥＤチップ３２０との動作電圧の差を調整するために設けられている。コネクタ７９０は、ＬＥＤ光源モジュール１０１を、たとえば液晶表示装置に組み込む際に、電気的な接続をなすために用いられる。 As shown in FIG. 2, the width direction dimension of the portion near the one end of the substrate 200 in the x direction is partially large. A plurality of single function elements 710 and connectors 790 are mounted on this portion. Each single function element 710 is, for example, a Zener diode or a chip resistor. When a Zener diode is employed as the single function element 710, the single function element 710 functions to prevent an excessive reverse voltage from being applied to the first LED chip 310 or the second LED chip 320, for example. When a chip resistor is employed as the single function element 710, the single function element 710 is provided to adjust a difference in operating voltage between a first LED chip 310 and a second LED chip 320 described later. The connector 790 is used to make an electrical connection when the LED light source module 101 is incorporated into a liquid crystal display device, for example.
　基板２００は、基材２１０、絶縁層２３０、配線層２４０およびレジスト層２６０からなる。 The substrate 200 includes a base 210, an insulating layer 230, a wiring layer 240, and a resist layer 260.
　基材２１０は、ｘ方向に長く延びる略帯状の金属板であり、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、基材２１０の材質としてＡｌが選択されており、基材２１０の厚さはたとえば１．０～１．５ｍｍ程度である。基材２１０は、主面２１１および裏面２１５を有する。主面２１１および裏面２１５は、ｚ方向において互いに反対方向を向く。 The substrate 210 is a substantially strip-shaped metal plate that extends long in the x direction, and is made of, for example, Al, Cu, Fe, or the like. In the present embodiment, Al is selected as the material of the substrate 210, and the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm. The substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
　絶縁層２３０は、基材２１０の主面２１１を覆っており、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０の厚さは、たとえば１００μｍ程度である。 The insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 . The thickness of the insulating layer 230 is, for example, about 100 μm.
　配線層２４０は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０への導通経路を形成するものであり、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。配線層２４０は、絶縁層２３０上に形成されている。ケース５００の外側の領域においては、配線層２４０は、レジスト層２６０によって覆われている。レジスト層２６０は、たとえば白色である。 The wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au. The wiring layer 240 is formed on the insulating layer 230. In the region outside the case 500, the wiring layer 240 is covered with a resist layer 260. The resist layer 260 is, for example, white.
　ケース５００は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を囲むように基板２００上に形成されており、たとえば白色樹脂からなり、より具体的にはたとえば白色のエポキシ樹脂からなる。ケース５００は、反射面５０１を有している。反射面５０１は、ｚ方向に対して傾斜しており、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０からｘ方向およびｙ方向に向かって発せられた光を反射することによりｚ方向上方に光を向かわせる機能を果たす。 The case 500 is formed on the substrate 200 so as to surround the first LED chip 310 and the second LED chip 320, and is made of, for example, a white resin, and more specifically, for example, of a white epoxy resin. The case 500 has a reflective surface 501. The reflection surface 501 is inclined with respect to the z direction, and reflects light emitted from the first LED chip 310 and the second LED chip 320 in the x direction and the y direction to emit light upward in the z direction. It fulfills the function to be directed.
　図２および図３に示すように、ケース５００に囲まれた領域には、第一ＬＥＤチップ３１０と第二ＬＥＤチップ３２０が配置されている。 As shown in FIGS. 2 and 3, the first LED chip 310 and the second LED chip 320 are arranged in an area surrounded by the case 500.
　第一ＬＥＤチップ３１０は、図４に示すように第一上面電極３１２および第一上面電極３１３を有している。第一上面電極３１２および第一上面電極３１３は、たとえばＡｕメッキ層によって形成されており、一方がいわゆるｎ型電極として機能し、他方がいわゆるｐ型電極として機能する。第一ＬＥＤチップ３１０は、第一上面電極３１２および第一上面電極３１３の直下に位置する第一半導体層３１５と、この第一半導体層３１５が形成された第一チップ基板３１４とを有する。第一半導体層３１５は、たとえばＧａＮ系半導体からなる。第一チップ基板３１４は、後述する第二ＬＥＤチップ３２０からの光を透過する材質からなり、たとえばサファイアまたはＧａＮからなる。このような構成により、第一ＬＥＤチップ３１０は、青色光を発する。なお、本発明で言う青色光は、その波長域がたとえば４４０ｎｍ～４６０ｎｍ程度である。第一上面電極３１２および第一上面電極３１３には、それぞれワイヤ３９０の一端がボンディングされている。各ワイヤ３９０の他端は、配線層２４０の適所にボンディングされている。 The first LED chip 310 has a first upper surface electrode 312 and a first upper surface electrode 313 as shown in FIG. The first upper surface electrode 312 and the first upper surface electrode 313 are formed of, for example, an Au plating layer, and one of them functions as a so-called n-type electrode and the other functions as a so-called p-type electrode. The first LED chip 310 includes a first semiconductor layer 315 positioned immediately below the first upper surface electrode 312 and the first upper surface electrode 313, and a first chip substrate 314 on which the first semiconductor layer 315 is formed. The first semiconductor layer 315 is made of a GaN-based semiconductor, for example. The first chip substrate 314 is made of a material that transmits light from the second LED chip 320 described later, and is made of, for example, sapphire or GaN. With such a configuration, the first LED chip 310 emits blue light. The blue light referred to in the present invention has a wavelength range of, for example, about 440 nm to 460 nm. One end of a wire 390 is bonded to each of the first upper surface electrode 312 and the first upper surface electrode 313. The other end of each wire 390 is bonded to an appropriate position on the wiring layer 240.
　基板２００と第一ＬＥＤチップ３１０との間には、第一サブマウント基板３０１が設けられている。第一サブマウント基板３０１は、頂面３０１ａを有している。頂面３０１ａは、主面２１１と平行であり、第一ＬＥＤチップ３１０を支持している。第一サブマウント基板３０１は、たとえばＳｉからなり、その厚さがたとえば３００μｍ程度である。また、頂面３０１ａには、たとえばＡｌなどの金属からなるコーティングが施されている。本実施形態においては、第一ＬＥＤチップ３１０は、第一サブマウント基板３０１を介して基材２１０の主面２１１に間接的に支持されている。第一サブマウント基板３０１と配線層２４０とは、金属接合層３４１を介して接合されている。本実施形態においては、金属接合層３４１は、たとえばＡｇからなる。また、第一ＬＥＤチップ３１０と第一サブマウント基板３０１とは、たとえばＳｉあるいはエポキシ樹脂からなる接合層３４２を介して接合されている。 A first submount substrate 301 is provided between the substrate 200 and the first LED chip 310. The first submount substrate 301 has a top surface 301a. The top surface 301 a is parallel to the main surface 211 and supports the first LED chip 310. The first submount substrate 301 is made of, for example, Si and has a thickness of, for example, about 300 μm. The top surface 301a is coated with a metal such as Al. In the present embodiment, the first LED chip 310 is indirectly supported on the main surface 211 of the base 210 via the first submount substrate 301. The first submount substrate 301 and the wiring layer 240 are bonded via a metal bonding layer 341. In the present embodiment, the metal bonding layer 341 is made of, for example, Ag. The first LED chip 310 and the first submount substrate 301 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
　第二ＬＥＤチップ３２０は、図３および図５に示すように、第二チップ基板３２４、第二半導体層３２５、第二上面電極３２２および第二上面電極３２３を有する。第二チップ基板３２４は、たとえばサファイアからなり、その厚さがたとえば１８０～２５０μｍ程度である。第二半導体層３２５は、第二チップ基板３２４の図中上面に積層されており、たとえばＡｌＧａＩｎＰ系半導体材料またはＧａＡｓ系半導体材料などからなる。第二半導体層３２５の厚さは、たとえば０．５μｍ～２．０μｍ程度である。第二上面電極３２２および第二上面電極３２３は、第二半導体層３２５の図中上面に設けられており、たとえばＡｕメッキ層によって形成されている。第二上面電極３２２および第二上面電極３２３は、一方がｎ型電極として機能し、他方がｐ型電極として機能する。このような構成により、第二ＬＥＤチップ３２０は、赤色光を発する。なお、本発明で言う赤色光は、その波長域がたとえば６００ｎｍ～６７０ｎｍ程度である。第二上面電極３２２および第二上面電極３２３には、それぞれワイヤ３９０の一端がボンディングされている。各ワイヤ３９０の他端は、配線層２４０の適所にボンディングされている。 As shown in FIGS. 3 and 5, the second LED chip 320 has a second chip substrate 324, a second semiconductor layer 325, a second upper surface electrode 322, and a second upper surface electrode 323. The second chip substrate 324 is made of, for example, sapphire and has a thickness of, for example, about 180 to 250 μm. The second semiconductor layer 325 is stacked on the upper surface of the second chip substrate 324 in the figure, and is made of, for example, an AlGaInP-based semiconductor material or a GaAs-based semiconductor material. The thickness of the second semiconductor layer 325 is, for example, about 0.5 μm to 2.0 μm. The second upper surface electrode 322 and the second upper surface electrode 323 are provided on the upper surface of the second semiconductor layer 325 in the drawing, and are formed of, for example, an Au plating layer. One of the second upper surface electrode 322 and the second upper surface electrode 323 functions as an n-type electrode, and the other functions as a p-type electrode. With such a configuration, the second LED chip 320 emits red light. In the present invention, the red light has a wavelength range of, for example, about 600 nm to 670 nm. One end of a wire 390 is bonded to each of the second upper surface electrode 322 and the second upper surface electrode 323. The other end of each wire 390 is bonded to an appropriate position on the wiring layer 240.
　第二ＬＥＤチップ３２０の製造工程においては、たとえばＧａＡｓからなる仮基板上に、第二半導体層３２５が成長形成される。そして、この第二半導体層３２５が、上記仮基板から第二チップ基板３２４へと張り替えられることにより、第二ＬＥＤチップ３２０が得られる。サファイアからなる第二チップ基板３２４は、第一ＬＥＤチップ３１０からの青色光を透過する。 In the manufacturing process of the second LED chip 320, the second semiconductor layer 325 is grown and formed on a temporary substrate made of, for example, GaAs. Then, the second semiconductor layer 325 is replaced from the temporary substrate to the second chip substrate 324, whereby the second LED chip 320 is obtained. The second chip substrate 324 made of sapphire transmits the blue light from the first LED chip 310.
　基板２００と第二ＬＥＤチップ３２０との間には、第二サブマウント基板３０２が設けられている。第二サブマウント基板３０２は、頂面３０２ａを有している。頂面３０２ａは、主面２１１と平行であり、第二ＬＥＤチップ３２０を支持している。第二サブマウント基板３０２は、たとえばＳｉからなり、その厚さがたとえば３００μｍ程度である。また、頂面３０２ａには、たとえばＡｌなどの金属からなるコーティングが施されている。本実施形態においては、第二ＬＥＤチップ３２０は、第二サブマウント基板３０２を介して基材２１０の主面２１１に間接的に支持されている。第二サブマウント基板３０２と配線層２４０とは、金属接合層３４１を介して接合されている。本実施形態においては、金属接合層３４１は、たとえばＡｇからなる。また、第二ＬＥＤチップ３２０と第二サブマウント基板３０２とは、たとえばＳｉあるいはエポキシ樹脂からなる接合層３４２を介して接合されている。 A second submount substrate 302 is provided between the substrate 200 and the second LED chip 320. The second submount substrate 302 has a top surface 302a. The top surface 302a is parallel to the main surface 211 and supports the second LED chip 320. The second submount substrate 302 is made of, for example, Si and has a thickness of, for example, about 300 μm. The top surface 302a is coated with a metal such as Al. In the present embodiment, the second LED chip 320 is indirectly supported on the main surface 211 of the base 210 via the second submount substrate 302. The second submount substrate 302 and the wiring layer 240 are bonded via a metal bonding layer 341. In the present embodiment, the metal bonding layer 341 is made of, for example, Ag. The second LED chip 320 and the second submount substrate 302 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
　被覆樹脂４１０は、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０を除き、ケース５００によって囲まれた領域を覆っている。被覆樹脂４１０の材質は特に限定されないが、本実施形態においては、たとえば酸化チタンが混入されたシリコーン樹脂などの白色樹脂からなる。 The coating resin 410 covers the area surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320. The material of the coating resin 410 is not particularly limited, but in the present embodiment, it is made of a white resin such as a silicone resin mixed with titanium oxide.
　図４に示すように、被覆樹脂４１０は、第一サブマウント基板３０１の側面の少なくとも一部を覆っている。この側面は、主面２１１が向く方向（ｚ方向）と交差する方向を向く面の一例であり、本実施形態においては、ｚ方向に対して垂直である方向（ｘｙ平面に含まれる方向）を向いている。また、本実施形態においては、第一サブマウント基板３０１の側面は、その一部あるいは全てが被覆樹脂によって覆われていることが好ましい。一方、第一サブマウント基板３０１の頂面３０１ａは、被覆樹脂４１０から露出していることが好ましい。 As shown in FIG. 4, the coating resin 410 covers at least a part of the side surface of the first submount substrate 301. This side surface is an example of a surface that faces a direction that intersects the direction (z direction) in which the main surface 211 faces, and in the present embodiment, a direction that is perpendicular to the z direction (direction included in the xy plane). It is suitable. In the present embodiment, the side surface of the first submount substrate 301 is preferably partially or entirely covered with a coating resin. On the other hand, the top surface 301 a of the first submount substrate 301 is preferably exposed from the coating resin 410.
　図５に示すように、被覆樹脂４１０は、第二サブマウント基板３０２の側面の少なくとも一部を覆っている。この側面は、主面２１１が向く方向（ｚ方向）と交差する方向を向く面の一例であり、本実施形態においては、ｚ方向に対して垂直である方向（ｘｙ平面に含まれる方向）を向いている。また、本実施形態においては、第二サブマウント基板３０２の側面は、その一部あるいは全てが被覆樹脂４１０によって覆われていることが好ましい。一方、第二サブマウント基板３０２の頂面３０２ａは、被覆樹脂４１０から露出していることが好ましい。 As shown in FIG. 5, the coating resin 410 covers at least a part of the side surface of the second submount substrate 302. This side surface is an example of a surface that faces a direction that intersects the direction (z direction) in which the main surface 211 faces, and in the present embodiment, a direction that is perpendicular to the z direction (direction included in the xy plane). It is suitable. In the present embodiment, the side surface of the second submount substrate 302 is preferably partially or entirely covered with the coating resin 410. On the other hand, the top surface 302 a of the second submount substrate 302 is preferably exposed from the coating resin 410.
　図３に示すように、被覆樹脂４１０は、その外端縁がケース５００の反射面５０１に接している。本実施形態においては、被覆樹脂４１０とケース５００との接合部分のうち主面２１１からｚ方向上方に最も離間した部位は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０のいずれの部位よりも主面２１１からｚ方向上方に離間している。すなわち、被覆樹脂４１０とケース５００との接合部分のうち主面２１１からｚ方向上方に最も離間した部位と主面２１１との距離Ｈ０は、第一ＬＥＤチップ３１０のうち主面２１１から最も離間した部位と主面２１１との距離Ｈ１、および第二ＬＥＤチップ３２０のうち主面２１１から最も離間した部位と主面２１１との距離Ｈ２のいずれよりも大となっている。 As shown in FIG. 3, the outer edge of the coating resin 410 is in contact with the reflection surface 501 of the case 500. In the present embodiment, the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 in the z-direction upward is the main portion of any portion of the first LED chip 310 and the second LED chip 320. The surface 211 is spaced upward in the z direction. That is, the distance H0 between the main surface 211 and the portion of the joint portion between the coating resin 410 and the case 500 that is farthest upward in the z direction from the main surface 211 is farthest from the main surface 211 of the first LED chip 310. The distance H1 between the part and the main surface 211 and the distance H2 between the part of the second LED chip 320 farthest from the main surface 211 and the main surface 211 are larger.
　被覆樹脂４１０は、反射面４１１を有している。反射面４１１は、第一サブマウント基板３０１および第二サブマウント基板３０２のそれぞれの側面上端付近からケース５００の反射面５０１に向かうほどｚ方向において基材２１０から遠ざかるようになだらかに傾斜している。 The coating resin 410 has a reflective surface 411. The reflective surface 411 is gently inclined so as to move away from the base material 210 in the z direction from the vicinity of the upper end of each side surface of the first submount substrate 301 and the second submount substrate 302 toward the reflective surface 501 of the case 500. .
　封止樹脂４２０は、ケース５００によって囲まれた領域において、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を覆っている。封止樹脂４２０は、たとえば透明なエポキシ樹脂またはシリコーン樹脂などに蛍光材料が混入された材質からなる。この蛍光材料は、たとえば第一ＬＥＤチップ３１０からの青色光によって励起されることにより、緑色光を発する。なお、本発明で言う緑色光は、その波長域がたとえば５００ｎｍ～５６５ｎｍ程度である。 The sealing resin 420 covers the first LED chip 310 and the second LED chip 320 in the region surrounded by the case 500. The sealing resin 420 is made of a material in which a fluorescent material is mixed in, for example, a transparent epoxy resin or silicone resin. This fluorescent material emits green light by being excited by blue light from the first LED chip 310, for example. The green light referred to in the present invention has a wavelength range of, for example, about 500 nm to 565 nm.
　本実施形態においては、封止樹脂４２０に含まれる上記蛍光材料は、硫化物系の蛍光材料である。硫化物系の蛍光材料は、カルシウムサルファイド（ＣａＳ）、ジンクサルファイド（ＺｎＳ）、ストロンチウムサルファイド（ＳｒＳ）、ストロンチウムチオガレート（ＳｒＧａ２Ｓ４）、および、カルシウムチオガレート（ＣａＧａ２Ｓ４）からなる群より選択される１以上の硫化物を含む。蛍光体を構成する硫化物系の蛍光材料は、Ｅｕ、Ｔｂ、Ｓｍ、Ｐｒ、Ｄｙ、およびＴｍのうちの少なくとも一元素がドーピングされた材料である。 In the present embodiment, the fluorescent material contained in the sealing resin 420 is a sulfide-based fluorescent material. The sulfide-based fluorescent material is one or more selected from the group consisting of calcium sulfide (CaS), zinc sulfide (ZnS), strontium sulfide (SrS), strontium thiogallate (SrGa2S4), and calcium thiogallate (CaGa2S4). Of sulfides. The sulfide-based fluorescent material constituting the phosphor is a material doped with at least one element of Eu, Tb, Sm, Pr, Dy, and Tm.
　緑色光を発する蛍光材料の場合、上記蛍光材料は、たとえば、ユーロピウムがドーピングされたストロンチウムチオガレート（ＳｒＧａ2Ｓ4：Ｅｕ）、または、ユーロピウムがドーピングされたカルシウムチオガレート（ＣａＧａ2Ｓ4：Ｅｕ）よりなる。緑色光を発する蛍光材料にドーピングされる元素は、Ｅｕに限定されず、Ｔｂ、Ｓｍ、Ｐｒ、Ｄｙ、およびＴｍのいずれかであってもよい。 In the case of a fluorescent material that emits green light, the fluorescent material is, for example, strontium thiogallate doped with europium (SrGa 2 S 4 : Eu) or calcium thiogallate doped with europium (CaGa 2 S 4 : Eu). ). The element doped in the fluorescent material emitting green light is not limited to Eu, and may be any of Tb, Sm, Pr, Dy, and Tm.
　次に、ＬＥＤ光源モジュール１０１の作用について説明する。 Next, the operation of the LED light source module 101 will be described.
　本実施形態によれば、第一ＬＥＤチップ３１０から発せられた光のうちｘｙ平面に略沿って第二ＬＥＤチップ３２０に向かって進行する光は、第二ＬＥＤチップ３２０の第二チップ基板３２４を透過することが可能である。このため、第一ＬＥＤチップ３１０からの光をより多く出射させることが可能であり、ＬＥＤ光源モジュール１０１の高輝度化あるいは色調の多彩化を図ることができる。 According to this embodiment, light traveling from the first LED chip 310 toward the second LED chip 320 substantially along the xy plane passes through the second chip substrate 324 of the second LED chip 320. It is possible to penetrate. For this reason, more light from the first LED chip 310 can be emitted, and the LED light source module 101 can have higher luminance or more diverse colors.
　第二チップ基板３２４は、第二ＬＥＤチップ３２０の大部分を占める部位である。また、第二チップ基板３２４の材質であるサファイアは、第一ＬＥＤチップ３１０からの青色光を特に透過しやすい。したがって、第一ＬＥＤチップ３１０からの青色光が第二チップ基板３２４によって吸収されることを抑制するのに合理的である。 The second chip substrate 324 occupies most of the second LED chip 320. In addition, sapphire, which is the material of the second chip substrate 324, is particularly easy to transmit blue light from the first LED chip 310. Therefore, it is reasonable to suppress the blue light from the first LED chip 310 from being absorbed by the second chip substrate 324.
　第二チップ基板３２４が、ｚ方向において第一ＬＥＤチップ３１０と重なる位置にあることにより、第一ＬＥＤチップ３１０からｘｙ平面に沿って進行してきた光を好適に透過させることができる。 Since the second chip substrate 324 is located at the position overlapping the first LED chip 310 in the z direction, the light traveling along the xy plane from the first LED chip 310 can be suitably transmitted.
　第一ＬＥＤチップ３１０の第一チップ基板３１４は、第二ＬＥＤチップ３２０からの赤色光を透過させことが可能である。したがって、第二ＬＥＤチップ３２０からの光をより多く出射させることができる。 The first chip substrate 314 of the first LED chip 310 can transmit the red light from the second LED chip 320. Therefore, more light from the second LED chip 320 can be emitted.
　封止樹脂４２０は、第一ＬＥＤチップ３１０からの光によって励起されることにより緑色光を発する。第二ＬＥＤチップ３２０の第二チップ基板３２４は、この緑色光を透過させることが可能である。これは、ＬＥＤ光源モジュール１０１からの白色光を所望の色合いとするのに有利である。 The sealing resin 420 emits green light when excited by light from the first LED chip 310. The second chip substrate 324 of the second LED chip 320 can transmit this green light. This is advantageous for making the white light from the LED light source module 101 have a desired hue.
　本実施形態によれば、第一サブマウント基板３０１および第二サブマウント基板３０２の側面は、そのほとんどが被覆樹脂４１０によって覆われている。第一サブマウント基板３０１および第二サブマウント基板３０２は、可視光を吸収しやすいＳｉからなるが、第一サブマウント基板３０１および第二サブマウント基板３０２によって第一ＬＥＤチップ３１０や第二ＬＥＤチップ３２０、あるいは封止樹脂４２０からの光が吸収されることを防止することができる。また、第一サブマウント基板３０１の頂面３０１ａおよび第二サブマウント基板３０２の頂面３０２ａにＡｌからなるコーティングが施されていることは、第一ＬＥＤチップ３１０や第二ＬＥＤチップ３２０、あるいは封止樹脂４２０からの光の吸収を阻止し、これらを反射することができるという利点がある。 According to the present embodiment, most of the side surfaces of the first submount substrate 301 and the second submount substrate 302 are covered with the coating resin 410. The first submount substrate 301 and the second submount substrate 302 are made of Si that easily absorbs visible light. The first LED chip 310 and the second LED chip are formed by the first submount substrate 301 and the second submount substrate 302. 320 or the light from the sealing resin 420 can be prevented from being absorbed. In addition, the fact that the top surface 301a of the first submount substrate 301 and the top surface 302a of the second submount substrate 302 are coated with Al indicates that the first LED chip 310, the second LED chip 320, or the sealing. There is an advantage that absorption of light from the stop resin 420 can be prevented and reflected.
　また、封止樹脂４２０は、硫化物からなる蛍光材料を含んでいる。このような硫化物は、鮮やかな緑色光を発するのに良好な特性を有する一方、多くの金属を硫化させる点が懸念される。本実施形態においては、硫化を受けうる配線層２４０が、被覆樹脂４１０によって覆われており、封止樹脂４２０からは隔離されている。このため、配線層２４０は硫化を受けるおそれが非常に少ない。 The sealing resin 420 includes a fluorescent material made of sulfide. While such a sulfide has good characteristics for emitting vivid green light, there is a concern that many metals are sulfided. In the present embodiment, the wiring layer 240 that can undergo sulfuration is covered with the coating resin 410 and is isolated from the sealing resin 420. For this reason, the wiring layer 240 is very unlikely to be subjected to sulfurization.
　被覆樹脂４１０は、ケース５００の反射面５０１の少なくとも一部を覆っている。特に、距離Ｈ０が、距離Ｈ１および距離Ｈ２に対して上述した関係とされることにより、被覆樹脂４１０はケース５００の反射面５０１の大部分を覆う構成となっている。これにより、第一ＬＥＤチップ３１０からの青色光、第二ＬＥＤチップ３２０からの赤色光および封止樹脂４２０からの緑色光がケース５００に到達することを抑制することができる。ケース５００の材質として好適なエポキシ樹脂は、被覆樹脂４１０の材質として好適なシリコーン樹脂よりも光による劣化が顕著である。本実施形態によれば、ケース５００が光によって劣化されることを抑制可能であり、より長期間においてＬＥＤ光源モジュール１０１を適切に発光させることができる。 The covering resin 410 covers at least a part of the reflection surface 501 of the case 500. In particular, since the distance H0 has the relationship described above with respect to the distance H1 and the distance H2, the coating resin 410 is configured to cover most of the reflective surface 501 of the case 500. Thereby, blue light from the first LED chip 310, red light from the second LED chip 320, and green light from the sealing resin 420 can be prevented from reaching the case 500. The epoxy resin suitable as the material of the case 500 is more significantly deteriorated by light than the silicone resin suitable as the material of the coating resin 410. According to this embodiment, it is possible to suppress the case 500 from being deteriorated by light, and the LED light source module 101 can appropriately emit light over a longer period.
　図６～図１５は、本発明に係るＬＥＤ光源モジュールの他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 6 to 15 show other embodiments of the LED light source module according to the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
　図６および図７は、本発明の第二実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０２は、基板２００の構成が上述した実施形態と異なっている。 6 and 7 show an LED light source module according to the second embodiment of the present invention. The LED light source module 102 of the present embodiment is different from the above-described embodiment in the configuration of the substrate 200.
　基板２００は、基材２１０、メッキ層２２０、絶縁層２３０および配線層２４０からなる。 The substrate 200 includes a base 210, a plating layer 220, an insulating layer 230, and a wiring layer 240.
　基材２１０は、ｘ方向およびｙ方向に広がり、たとえばｘ方向に長く延びる長矩形状の金属板であり、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、基材２１０の材質としてＡｌが選択されており、基材２１０の厚さはたとえば１．０～１．５ｍｍ程度である。基材２１０は、主面２１１および裏面２１５を有する。主面２１１および裏面２１５は、ｚ方向において互いに反対方向を向く。基材２１０には、隆起部２１２および陥没部２１６が形成されている。 The substrate 210 is a long rectangular metal plate that extends in the x direction and the y direction and extends in the x direction, for example, and is made of, for example, Al, Cu, Fe, or the like. In the present embodiment, Al is selected as the material of the substrate 210, and the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm. The substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction. A raised portion 212 and a depressed portion 216 are formed on the substrate 210.
　隆起部２１２は、主面２１１よりもｚ方向上方に隆起した部位であり、本実施形態においては、頂面２１３および傾斜面２１４を有する。頂面２１３は、隆起部２１２のうちｚ方向上方にもっとも突出した部位の表面であり、主面２１１と平行である。本実施形態においては、頂面２１３は、矩形状である。傾斜面２１４は、主面２１１と頂面２１３とに繋がっており、ｘｙ平面に対して傾斜している。隆起部２１２の主面２１１からの隆起高さは、たとえば１５０～２００μｍである。 The raised portion 212 is a portion raised above the main surface 211 in the z direction, and has a top surface 213 and an inclined surface 214 in the present embodiment. The top surface 213 is the surface of the protruding portion 212 that protrudes most upward in the z direction, and is parallel to the main surface 211. In the present embodiment, the top surface 213 has a rectangular shape. The inclined surface 214 is connected to the main surface 211 and the top surface 213, and is inclined with respect to the xy plane. The height of the raised portion 212 from the main surface 211 is, for example, 150 to 200 μm.
　陥没部２１６は、裏面２１５よりもｚ方向上方に凹んだ部位であり、ｚ方向視において隆起部２１２と重なっている。本実施形態においては、陥没部２１６は、底面２１７を有している。底面２１７は、裏面２１５と平行であり、本実施形態においては、矩形状である。ｚ方向視において、底面２１７は、隆起部２１２に内包されている。また底面２１７と頂面２１３とは、ｚ方向視においてそれぞれの外縁が互いにほとんど重なっているか、底面２１７の外縁が頂面２１３の外縁に対して若干内側に位置している。陥没部２１６の裏面２１５からの陥没深さは、たとえば１５０～２００μｍである。 The depressed portion 216 is a portion that is recessed above the back surface 215 in the z direction, and overlaps the raised portion 212 when viewed in the z direction. In the present embodiment, the depressed portion 216 has a bottom surface 217. The bottom surface 217 is parallel to the back surface 215 and has a rectangular shape in the present embodiment. When viewed in the z direction, the bottom surface 217 is included in the raised portion 212. Further, the bottom surface 217 and the top surface 213 have their outer edges almost overlapping each other when viewed in the z direction, or the outer edge of the bottom surface 217 is located slightly inside the outer edge of the top surface 213. The depression depth from the back surface 215 of the depression 216 is, for example, 150 to 200 μm.
　メッキ層２２０は、隆起部２１２の頂面２１３を覆っており、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。本実施形態においては、メッキ層２２０は、Ｎｉ，Ｐｄ，Ａｕが積層されている。 The plated layer 220 covers the top surface 213 of the raised portion 212 and is made of a metal such as Cu, Ni, Pd, or Au. In the present embodiment, the plating layer 220 is laminated with Ni, Pd, and Au.
　絶縁層２３０は、基材２１０の主面２１１を覆っており、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０には、開口２３１が形成されている。開口２３１は、隆起部２１２の少なくとも一部を露出させるために設けられており、本実施形態においては、隆起部２１２の頂面２１３を露出させている。一方、隆起部２１２の傾斜面２１４は、絶縁層２３０によって覆われている。絶縁層２３０の厚さは、たとえば１００μｍ程度である。 The insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 . An opening 231 is formed in the insulating layer 230. The opening 231 is provided to expose at least a part of the raised portion 212, and in the present embodiment, the top surface 213 of the raised portion 212 is exposed. On the other hand, the inclined surface 214 of the raised portion 212 is covered with the insulating layer 230. The thickness of the insulating layer 230 is, for example, about 100 μm.
　配線層２４０は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０への導通経路を形成するものであり、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。配線層２４０は、絶縁層２３０上に形成されており、本実施形態においては、絶縁層２３０のうち主面２１１を覆う平坦な部位に形成されている。図６に示すように、本実施形態においては、配線層２４０は、下地層２５１とメッキ層２５２とを有している。下地層２５１は、絶縁層２３０上に形成されており、たとえばＣｕ箔が貼り付けられた層である。なお、下地層２５１をメッキによって形成してもよい。メッキ層２５２は、下地層２５１上に形成されており、メッキ層２２０と同様にＮｉ，Ｐｄ，Ａｕが積層されている。後述するように、本実施形態においては、配線層２４０のメッキ層２５２と基板２００のメッキ層２２０とは同一の工程によって一括して形成される。 The wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au. The wiring layer 240 is formed on the insulating layer 230. In the present embodiment, the wiring layer 240 is formed on a flat portion of the insulating layer 230 that covers the main surface 211. As shown in FIG. 6, in the present embodiment, the wiring layer 240 has a base layer 251 and a plating layer 252. The underlayer 251 is formed on the insulating layer 230 and is a layer to which, for example, a Cu foil is attached. Note that the base layer 251 may be formed by plating. The plating layer 252 is formed on the base layer 251, and Ni, Pd, and Au are laminated similarly to the plating layer 220. As will be described later, in the present embodiment, the plating layer 252 of the wiring layer 240 and the plating layer 220 of the substrate 200 are collectively formed by the same process.
　第一サブマウント基板３０１および第二サブマウント基板３０２は、メッキ層２２０を介して、ともに隆起部２１２の頂面２１３に支持されている。第一サブマウント基板３０１および第二サブマウント基板３０２とメッキ層２２０とは、金属接合層３４１によって接合されている。第一ＬＥＤチップ３１０に接続された一方のワイヤ３９０は、図６においてｙ方向手前もしくは奥方に位置する配線層２４０の図示しない適所にボンディングされている。また、第二ＬＥＤチップ３２０に接続された一方のワイヤ３９０は、図６においてｙ方向手前もしくは奥方に位置する配線層２４０の図示しない適所にボンディングされている。 The first submount substrate 301 and the second submount substrate 302 are both supported by the top surface 213 of the raised portion 212 via the plating layer 220. The first submount substrate 301 and the second submount substrate 302 and the plating layer 220 are bonded together by a metal bonding layer 341. One wire 390 connected to the first LED chip 310 is bonded to an appropriate position (not shown) of the wiring layer 240 located in front of or behind the y direction in FIG. Further, one wire 390 connected to the second LED chip 320 is bonded to an appropriate position (not shown) of the wiring layer 240 located in front of or behind the y direction in FIG.
　次に、ＬＥＤ光源モジュール１０２の製造方法の一例について、図８～図１２を参照しつつ以下に説明する。 Next, an example of a method for manufacturing the LED light source module 102 will be described below with reference to FIGS.
　まず、図８に示すように金属板２１０’を用意する。金属板２１０’は、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、金属板２１０’の材質としてＡｌが選択されており、金属板２１０’の厚さはたとえば１．０～１．５ｍｍ程度である。金属板２１０’は、ｚ方向において互いに反対方向を向く主面２１１’および裏面２１５’を有する。次いで、主面２１１’を覆うように絶縁層２３０’を形成する。絶縁層２３０’は、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０’の厚さは、たとえば１００μｍ程度である。次いで、絶縁層２３０’を覆うように下地層２５１’を形成する。下地層２５１’の形成は、たとえば絶縁層２３０’上にＣｕ箔を貼り付けることによってなされる。 First, a metal plate 210 ′ is prepared as shown in FIG. The metal plate 210 ′ is made of, for example, Al, Cu, Fe or the like. In the present embodiment, Al is selected as the material of the metal plate 210 ′, and the thickness of the metal plate 210 ′ is, for example, about 1.0 to 1.5 mm. The metal plate 210 ′ has a main surface 211 ′ and a back surface 215 ′ that face in opposite directions in the z direction. Next, an insulating layer 230 ′ is formed so as to cover the main surface 211 ′. The insulating layer 230 ′ is made of an insulating resin or an insulating material such as SiO 2 . The thickness of the insulating layer 230 ′ is, for example, about 100 μm. Next, a base layer 251 ′ is formed so as to cover the insulating layer 230 ′. The underlayer 251 ′ is formed, for example, by attaching a Cu foil on the insulating layer 230 ′.
　次いで、下地層２５１’にたとえばエッチングを用いたパターニングを施すことにより、図９に示すように下地層２５１を形成する。なお、あらかじめパターンニングが施されたＣｕ箔を絶縁層２３０’に貼り付けることによって下地層２５１を形成してもよい。次いで、図１０に示すように、金型６１０，６２０を用いて金属板２１０’を加工する。金型６１０は、上面が矩形状である。金型６２０は、矩形状の凹部６２１を有している。凹部６２１は、ｚ方向視において金型６１０の上面よりも若干大となっている。金属板２１０’の裏面２１５’側に金型６１０を配置し、金属板２１０’の主面２１１’側に金型６２０を配置する。そして、金型６１０と金型６２０とを接近させることにより、金属板２１０’に金型６１０の上面を嵌入させる。これにより、隆起部２１２と陥没部２１６とを有する基材２１０が得られる。金型６１０の上面が接していた部位が陥没部２１６の底面２１７となる。また、金型６１０に対応して金型６２０の凹部６２１に進入した部位の表面が頂面２１３となる。この際、本実施形態においては、下地層２５１は、金型６２０のうち凹部６２１を避けた位置と当接しており、変形されない。絶縁層２３０’は、隆起部２１２に沿った形状に変形される。 Next, the base layer 251 'is patterned by using, for example, etching to form the base layer 251 as shown in FIG. Note that the base layer 251 may be formed by attaching a Cu foil that has been previously patterned to the insulating layer 230 ′. Next, as shown in FIG. 10, the metal plate 210 ′ is processed using the molds 610 and 620. The mold 610 has a rectangular top surface. The mold 620 has a rectangular recess 621. The recess 621 is slightly larger than the upper surface of the mold 610 when viewed in the z direction. A metal mold 610 is disposed on the back surface 215 ′ side of the metal plate 210 ′, and a metal mold 620 is disposed on the main surface 211 ′ side of the metal plate 210 ′. Then, the upper surface of the mold 610 is fitted into the metal plate 210 ′ by bringing the mold 610 and the mold 620 closer to each other. Thereby, the base material 210 which has the protruding part 212 and the depression part 216 is obtained. A portion where the upper surface of the mold 610 is in contact becomes a bottom surface 217 of the depressed portion 216. Further, the surface of the portion that has entered the recess 621 of the mold 620 corresponding to the mold 610 becomes the top surface 213. At this time, in this embodiment, the base layer 251 is in contact with a position where the concave portion 621 is avoided in the mold 620 and is not deformed. The insulating layer 230 ′ is deformed into a shape along the raised portion 212.
　次いで、絶縁層２３０’の一部を除去することにより、図１１に示すように絶縁層２３０を形成する。絶縁層２３０’の一部を除去する処理は、たとえばスキージ６３０を用いてなされる。スキージ６３０の下端縁は、ｙ方向に平行に長く延びている。このスキージ６３０の下端縁をｚ方向において頂面２１３と同じか、若干下方に位置させた状態で、スキージ６３０をｘ方向に移動させる。これにより、絶縁層２３０’のうち頂面２１３よりもｚ方向上方に位置する部分がスキージ６３０によって除去される。この結果、頂面２１３のみを露出させる開口２３１を有する絶縁層２３０が形成される。本実施形態においては、下地層２５１は、頂面２１３よりも十分にｚ方向下方に位置するため、スキージ６３０には接触しない。 Next, by removing a part of the insulating layer 230 ', the insulating layer 230 is formed as shown in FIG. The process of removing a part of the insulating layer 230 ′ is performed using, for example, a squeegee 630. The lower end edge of the squeegee 630 extends long in parallel to the y direction. The squeegee 630 is moved in the x direction while the lower edge of the squeegee 630 is located at the same level as or slightly below the top surface 213 in the z direction. As a result, the portion of the insulating layer 230 ′ located above the top surface 213 in the z direction is removed by the squeegee 630. As a result, the insulating layer 230 having the opening 231 exposing only the top surface 213 is formed. In the present embodiment, the base layer 251 is located sufficiently below the top surface 213 in the z direction, and thus does not contact the squeegee 630.
　次いで、図１２に示すように、メッキ層２２０およびメッキ層２５２を形成する。メッキ層２２０およびメッキ層２５２は、たとえば電解メッキによって形成される。このため、導電体である基材２１０の頂面２１３および下地層２５１を覆うように、ともにＮｉ，Ｐｄ，Ａｕからなるメッキ層２２０および下地層２５１が形成され、絶縁層２３０上には形成されない。以上の工程を経ることにより、基材２１０、メッキ層２２０、絶縁層２３０および配線層２４０からなる基板２００が得られる。 Next, as shown in FIG. 12, a plating layer 220 and a plating layer 252 are formed. The plated layer 220 and the plated layer 252 are formed by, for example, electrolytic plating. Therefore, the plating layer 220 and the base layer 251 made of Ni, Pd, Au are formed so as to cover the top surface 213 and the base layer 251 of the base material 210, which is a conductor, and is not formed on the insulating layer 230. . Through the above steps, the substrate 200 including the base 210, the plating layer 220, the insulating layer 230, and the wiring layer 240 is obtained.
　この後は、ケース５００の形成、第一サブマウント基板３０１および第一ＬＥＤチップ３１０の搭載、第二サブマウント基板３０２および第二ＬＥＤチップ３２０の搭載、被覆樹脂４１０の形成、ワイヤ３９０のボンディングおよび封止樹脂４２０の形成を経ることにより、ＬＥＤ光源モジュール１０２が得られる。 Thereafter, the case 500 is formed, the first submount substrate 301 and the first LED chip 310 are mounted, the second submount substrate 302 and the second LED chip 320 are mounted, the coating resin 410 is formed, the wire 390 is bonded, The LED light source module 102 is obtained through the formation of the sealing resin 420.
　このような実施形態によっても、ＬＥＤ光源モジュール１０２の高輝度化および色調の多彩化を図ることができる。また、第一サブマウント基板３０１および第二サブマウント基板３０２は、絶縁層２３０を介することなく隆起部２１２に支持されている。これにより、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０からの伝熱が絶縁層２３０によって妨げられることがない。したがって、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０からの放熱を促進することが可能であり、ＬＥＤ光源モジュール１０２の高輝度化を図ることができる。 Also according to such an embodiment, the LED light source module 102 can be increased in brightness and color tone. Further, the first submount substrate 301 and the second submount substrate 302 are supported by the raised portions 212 without the insulating layer 230 interposed therebetween. Thereby, the heat transfer from the first LED chip 310 and the second LED chip 320 is not hindered by the insulating layer 230. Therefore, heat radiation from the first LED chip 310 and the second LED chip 320 can be promoted, and the brightness of the LED light source module 102 can be increased.
　配線層２４０は、絶縁層２３０上に形成されており、隆起部２１２（基材２１０）を避けた位置に配置されている。このため、金属からなる基材２１０と配線層２４０とが不当に導通することを回避することができる。 The wiring layer 240 is formed on the insulating layer 230 and is disposed at a position avoiding the raised portion 212 (base material 210). For this reason, it can avoid that the base material 210 and the wiring layer 240 which consist of a metal are unjustly conducted.
　隆起部２１２のうち頂面２１３が絶縁層２３０から露出しており、頂面２１３以外の部分は絶縁層２３０に覆われている。これにより、主面２１１と平行である頂面２１３に第一サブマウント基板３０１および第一ＬＥＤチップ３１０と第二サブマウント基板３０２および第二ＬＥＤチップ３２０を搭載する作業を容易に行うことができる。なお、絶縁層２３０の除去方法によっては、頂面２１３のみならず、傾斜部２１４も絶縁層から露出する場合がある。 The top surface 213 of the raised portion 212 is exposed from the insulating layer 230, and portions other than the top surface 213 are covered with the insulating layer 230. Thereby, the operation | work which mounts the 1st submount board | substrate 301, the 1st LED chip 310, the 2nd submount board | substrate 302, and the 2nd LED chip 320 on the top surface 213 parallel to the main surface 211 can be performed easily. . Note that depending on the method of removing the insulating layer 230, not only the top surface 213 but also the inclined portion 214 may be exposed from the insulating layer.
　隆起部２１２の裏側に位置する陥没部２１６を有する構成は、図１０に示すように金属板２１０’の裏面２１５’側から金型６１０を押圧することにより容易に隆起部２１２を形成することができるという利点がある。 In the configuration having the depressed portion 216 located on the back side of the raised portion 212, the raised portion 212 can be easily formed by pressing the mold 610 from the back surface 215 ′ side of the metal plate 210 ′ as shown in FIG. There is an advantage that you can.
　図１３は、本発明の第三実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０３は、第一サブマウント基板３０１および第二サブマウント基板３０２を備えていない。このため、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０は、金属接合層３４１を介してメッキ層２２０にそれぞれ接合されている。 FIG. 13 shows an LED light source module according to the third embodiment of the present invention. The LED light source module 103 of this embodiment does not include the first submount substrate 301 and the second submount substrate 302. Therefore, the first LED chip 310 and the second LED chip 320 are bonded to the plating layer 220 via the metal bonding layer 341, respectively.
　被覆樹脂４１０は、配線層２４０および絶縁層２３０を覆っている一方、隆起部２１２の頂面２１３に形成されたメッキ層２２０を露出させている。このため、メッキ層２２０は、封止樹脂４２０と接している。 The coating resin 410 covers the wiring layer 240 and the insulating layer 230, while exposing the plating layer 220 formed on the top surface 213 of the raised portion 212. For this reason, the plating layer 220 is in contact with the sealing resin 420.
　本実施形態においては、メッキ層２２０は、基材２１０側から順に積層されたＮｉ層、Ｐｄ層およびＡｕ層からなる。上記Ｎｉ層は、頂面２１３に直接形成されており、厚さがたとえば５μｍ程度である。上記Ｐｄ層は上記Ｎｉ層上に形成されており、厚さがたとえば０．１μｍ程度である。上記Ａｕ層は上記Ｐｄ層上に形成されており、厚さがたとえば０．１μｍ程度である。同様に、配線層２４０のメッキ層２５２は、下地層２５１側から順に積層されたＮｉ層、Ｐｄ層およびＡｕ層からなる。これらのＮｉ層、Ｐｄ層およびＡｕ層の構成は、メッキ層２２０と同様である。 In the present embodiment, the plating layer 220 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the substrate 210 side. The Ni layer is formed directly on the top surface 213 and has a thickness of about 5 μm, for example. The Pd layer is formed on the Ni layer and has a thickness of about 0.1 μm, for example. The Au layer is formed on the Pd layer and has a thickness of about 0.1 μm, for example. Similarly, the plating layer 252 of the wiring layer 240 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the base layer 251 side. The configurations of these Ni layer, Pd layer, and Au layer are the same as those of the plating layer 220.
　このような実施形態によっても、ＬＥＤ光源モジュール１０３の高輝度化および色調の多彩化を図ることができる。本実施形態においては、メッキ層２２０が封止樹脂４２０と接触する。しかし、メッキ層２２０は、その表層が硫化に対する耐性が比較的高いＡｕ層とされている。したがって、メッキ層２２０が封止樹脂４２０の蛍光材料によって硫化されることを防止することができる。 Also according to such an embodiment, the LED light source module 103 can be increased in brightness and color tone. In the present embodiment, the plating layer 220 is in contact with the sealing resin 420. However, the plating layer 220 is an Au layer whose surface layer has a relatively high resistance to sulfidation. Therefore, the plating layer 220 can be prevented from being sulfided by the fluorescent material of the sealing resin 420.
　図１４は、本発明の第四実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０４は、上述したＬＥＤ光源モジュール１０１と比較して、被覆樹脂４１０を備えない点が主な相違点である。 FIG. 14 shows an LED light source module according to the fourth embodiment of the present invention. The LED light source module 104 of this embodiment is mainly different from the LED light source module 101 described above in that the coating resin 410 is not provided.
　被覆樹脂４１０を備えないため、配線層２４０および絶縁層２３０は、封止樹脂４２０と接している。 Since the coating resin 410 is not provided, the wiring layer 240 and the insulating layer 230 are in contact with the sealing resin 420.
　本実施形態においては、配線層２４０は、基材２１０側から順に積層されたＮｉ層、Ｐｄ層およびＡｕ層からなる。上記Ｎｉ層は、頂面２１３に直接形成されており、厚さがたとえば５μｍ程度である。上記Ｐｄ層は上記Ｎｉ層上に形成されており、厚さがたとえば０．１μｍ程度である。上記Ａｕ層は上記Ｐｄ層上に形成されており、厚さがたとえば０．１μｍ程度である。また、上記Ｎｉ層と絶縁層２３０との間にＣｕ層を設けることが好ましい。 In the present embodiment, the wiring layer 240 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the substrate 210 side. The Ni layer is formed directly on the top surface 213 and has a thickness of about 5 μm, for example. The Pd layer is formed on the Ni layer and has a thickness of about 0.1 μm, for example. The Au layer is formed on the Pd layer and has a thickness of about 0.1 μm, for example. Further, it is preferable to provide a Cu layer between the Ni layer and the insulating layer 230.
　このような実施形態によっても、ＬＥＤ光源モジュール１０４の高輝度化および色調の多彩化を図ることができる。被覆樹脂４１０を備えない構成であっても、配線層２４０およびメッキ層２２０の表層がＡｕ層とされている。これにより、配線層２４０およびメッキ層２２０が封止樹脂４２０によって硫化されることを防止することができる。 Also according to such an embodiment, the LED light source module 104 can be increased in brightness and color tone. Even in the configuration without the coating resin 410, the surface layers of the wiring layer 240 and the plating layer 220 are Au layers. Thereby, the wiring layer 240 and the plating layer 220 can be prevented from being sulfided by the sealing resin 420.
　図１５は、本発明の第五実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０５は、比較的小型のモジュールとして構成されることにより、電子機器の点光源として用いられるものである。この点において、上述したＬＥＤ光源モジュール１０１～１０４が、ｘ方向に長く延びるバー状光源として構成されている点と異なる。 FIG. 15 shows an LED light source module according to the fifth embodiment of the present invention. The LED light source module 105 of this embodiment is used as a point light source of an electronic device by being configured as a relatively small module. In this respect, the LED light source modules 101 to 104 described above are different from those configured as bar-shaped light sources extending in the x direction.
　本実施形態においては、リード２７０およびリード２８０によって本発明で言う導通支持部材が構成されている。リード２７０およびリード２８０は、金属からなり、たとえば母材としてのＣｕ板にＮｉやＡｕなどのメッキが施されている。 In this embodiment, the lead support 270 and the lead 280 constitute a conduction support member referred to in the present invention. The lead 270 and the lead 280 are made of metal, for example, a Cu plate as a base material is plated with Ni, Au, or the like.
　リード２７０は、主面２７１および端子部２７５を有している。主面２７１は、ｚ方向上方を向いており、第二サブマウント基板３０２を介して第二ＬＥＤチップ３２０を支持している。端子部２７５は、ＬＥＤ光源モジュール１０５を図示しない回路基板などに実装するために用いられる。 The lead 270 has a main surface 271 and a terminal portion 275. The main surface 271 faces upward in the z direction, and supports the second LED chip 320 via the second submount substrate 302. The terminal portion 275 is used for mounting the LED light source module 105 on a circuit board (not shown).
　リード２８０は、主面２８１および端子部２８５を有している。主面２８１は、ｚ方向上方を向いており第一サブマウント基板３０１を介して第一ＬＥＤチップ３１０を支持している。端子部２８５は、ＬＥＤ光源モジュール１０５を図示しない回路基板などに実装するために用いられる。 The lead 280 has a main surface 281 and a terminal portion 285. The main surface 281 faces upward in the z direction and supports the first LED chip 310 via the first submount substrate 301. The terminal portion 285 is used for mounting the LED light source module 105 on a circuit board (not shown).
　ケース５００は、リード２７０およびリード２８０の一部ずつを覆っており、これらを相対的に固定する役割を果たしている。 The case 500 covers a part of each of the lead 270 and the lead 280 and plays a role of relatively fixing them.
　このような実施形態によっても、ＬＥＤ光源モジュール１０５の高輝度化および色調の多彩化を図ることができる。 Also according to such an embodiment, the LED light source module 105 can be increased in luminance and color tone.
　図１６～図２０は、本発明の第六実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０６は、基板２００、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０、被覆樹脂４１０、封止樹脂４２０、ケース５００、複数の単機能素子７１０およびコネクタ７９０を備えている。ＬＥＤ光源モジュール１０６は、細長い基板２００に複数の第一ＬＥＤチップ３１０および複数の第二ＬＥＤチップ３２０が配置されることにより細長いバー状光源として構成されている。このようなＬＥＤ光源モジュールは、平板状の導光板の側面に正対する位置に配置されることにより、この導光板から面状光を出射するために用いられる。この面状光は、たとえば液晶表示装置のバックライトとして利用される。後述する構成により、ＬＥＤ光源モジュール１０６は、白色光を出射する。 16 to 20 show an LED light source module according to the sixth embodiment of the present invention. The LED light source module 106 of this embodiment includes a substrate 200, a first LED chip 310, a second LED chip 320, a coating resin 410, a sealing resin 420, a case 500, a plurality of single function elements 710 and a connector 790. . The LED light source module 106 is configured as an elongated bar light source by arranging a plurality of first LED chips 310 and a plurality of second LED chips 320 on an elongated substrate 200. Such an LED light source module is used to emit planar light from the light guide plate by being disposed at a position facing the side surface of the flat light guide plate. This planar light is used as a backlight of a liquid crystal display device, for example. With the configuration described later, the LED light source module 106 emits white light.
　図１６は、ＬＥＤ光源モジュール１０６の平面図であり、図１７は、要部拡大平面図である。図１８は、図１７のＸＶＩＩＩ－ＸＶＩＩＩ線に沿うｚｘ平面における断面図である。図１９は、主に第一ＬＥＤチップ３１０を示す要部拡大断面図であり、図２０は、主に第二ＬＥＤチップ３２０を示す要部拡大断面図である。なお、図１７においては、理解の便宜上、被覆樹脂４１０および封止樹脂４２０を省略している。 FIG. 16 is a plan view of the LED light source module 106, and FIG. 17 is an enlarged plan view of a main part. 18 is a cross-sectional view in the zx plane along the line XVIII-XVIII in FIG. FIG. 19 is an enlarged cross-sectional view of main parts mainly showing the first LED chip 310, and FIG. 20 is an enlarged cross-sectional view showing main parts mainly showing the second LED chip 320. In FIG. 17, the coating resin 410 and the sealing resin 420 are omitted for convenience of understanding.
　図１６に示すように、基板２００は、全体としてｘ方向に長く延びる細長形状とされている。この長手方向に沿って、複数のケース５００が配置されている。本実施形態においては、それぞれのケース５００は同一形状であり、後述するケース５００の内部における構成も同一である。 As shown in FIG. 16, the substrate 200 as a whole has an elongated shape extending long in the x direction. A plurality of cases 500 are arranged along the longitudinal direction. In the present embodiment, each case 500 has the same shape, and the configuration inside the case 500 described later is also the same.
　図１７に示すように、基板２００のｘ方向一端寄り部分は、幅方向寸法が部分的に大となっている。この部分に、複数の単機能素子７１０およびコネクタ７９０が搭載されている。各単機能素子７１０は、たとえばツェナーダイオードあるいはチップ抵抗器などである。単機能素子７１０としてツェナーダイオードを採用する場合、単機能素子７１０は、たとえば第一ＬＥＤチップ３１０もしくは第二ＬＥＤチップ３２０に過大な逆電圧が印加されることを回避する機能を果たす。単機能素子７１０としてチップ抵抗器を採用する場合、後述する第一ＬＥＤチップ３１０と第二ＬＥＤチップ３２０との動作電圧の差を調整するために設けられている。コネクタ７９０は、ＬＥＤ光源モジュール１０６を、たとえば液晶表示装置に組み込む際に、電気的な接続をなすために用いられる。 As shown in FIG. 17, the width direction dimension of the portion near the one end of the substrate 200 in the x direction is partially large. A plurality of single function elements 710 and connectors 790 are mounted on this portion. Each single function element 710 is, for example, a Zener diode or a chip resistor. When a Zener diode is employed as the single function element 710, the single function element 710 functions to prevent an excessive reverse voltage from being applied to the first LED chip 310 or the second LED chip 320, for example. When a chip resistor is employed as the single function element 710, it is provided to adjust a difference in operating voltage between a first LED chip 310 and a second LED chip 320, which will be described later. The connector 790 is used to make an electrical connection when the LED light source module 106 is incorporated into, for example, a liquid crystal display device.
　基板２００は、基材２１０、絶縁層２３０、配線層２４０およびレジスト層２６０からなる。 The substrate 200 includes a base 210, an insulating layer 230, a wiring layer 240, and a resist layer 260.
　基材２１０は、ｘ方向に長く延びる略帯状の金属板であり、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、基材２１０の材質としてＡｌが選択されており、基材２１０の厚さはたとえば１．０～１．５ｍｍ程度である。基材２１０は、主面２１１および裏面２１５を有する。主面２１１および裏面２１５は、ｚ方向において互いに反対方向を向く。 The substrate 210 is a substantially strip-shaped metal plate that extends long in the x direction, and is made of, for example, Al, Cu, Fe, or the like. In the present embodiment, Al is selected as the material of the substrate 210, and the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm. The substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
　絶縁層２３０は、基材２１０の主面２１１を覆っており、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０の厚さは、たとえば１００μｍ程度である。 The insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 . The thickness of the insulating layer 230 is, for example, about 100 μm.
　配線層２４０は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０への導通経路を形成するものであり、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。配線層２４０は、絶縁層２３０上に形成されている。ケース５００の外側の領域においては、配線層２４０は、レジスト層２６０によって覆われている。レジスト層２６０は、たとえば白色である。 The wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au. The wiring layer 240 is formed on the insulating layer 230. In the region outside the case 500, the wiring layer 240 is covered with a resist layer 260. The resist layer 260 is, for example, white.
　ケース５００は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を囲むように基板２００上に形成されており、たとえば白色樹脂からなり、より具体的にはたとえば白色のエポキシ樹脂からなる。ケース５００は、反射面５０１を有している。反射面５０１は、ｚ方向に対して傾斜しており、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０からｘ方向およびｙ方向に向かって発せられた光を反射することによりｚ方向上方に向かわせる機能を果たす。 The case 500 is formed on the substrate 200 so as to surround the first LED chip 310 and the second LED chip 320, and is made of, for example, a white resin, and more specifically, for example, of a white epoxy resin. The case 500 has a reflective surface 501. The reflecting surface 501 is inclined with respect to the z direction, and reflects light emitted from the first LED chip 310 and the second LED chip 320 in the x direction and the y direction to be directed upward in the z direction. Fulfills the function.
　図１７および図１８に示すように、ケース５００に囲まれた領域には、第一ＬＥＤチップ３１０と第二ＬＥＤチップ３２０が配置されている。 As shown in FIGS. 17 and 18, the first LED chip 310 and the second LED chip 320 are arranged in an area surrounded by the case 500.
　第一ＬＥＤチップ３１０は、図１９に示すように上面電極３１２および上面電極３１３を有している。上面電極３１２および上面電極３１３は、たとえばＡｕメッキ層によって形成されており、一方がいわゆるｎ型電極として機能し、他方がいわゆるｐ型電極として機能する。第一ＬＥＤチップ３１０は、たとえば上面電極３１２および上面電極３１３の直下に位置する半導体層と、この半導体層が形成されたたとえばサファイア基板とを有する。この半導体層は、たとえばＧａＮ系半導体からなる。このような構成により、第一ＬＥＤチップ３１０は、青色光を発する。なお、本発明で言う青色光は、その波長域がたとえば４４０ｎｍ～４６０ｎｍ程度である。上面電極３１２および上面電極３１３には、それぞれワイヤ３９０の一端がボンディングされている。各ワイヤ３９０の他端は、配線層２４０の適所にボンディングされている。 The first LED chip 310 has an upper surface electrode 312 and an upper surface electrode 313 as shown in FIG. The upper surface electrode 312 and the upper surface electrode 313 are formed of, for example, an Au plating layer, and one of them functions as a so-called n-type electrode and the other functions as a so-called p-type electrode. The first LED chip 310 includes, for example, a semiconductor layer located immediately below the upper surface electrode 312 and the upper surface electrode 313 and, for example, a sapphire substrate on which the semiconductor layer is formed. This semiconductor layer is made of, for example, a GaN-based semiconductor. With such a configuration, the first LED chip 310 emits blue light. The blue light referred to in the present invention has a wavelength range of, for example, about 440 nm to 460 nm. One end of a wire 390 is bonded to each of the upper surface electrode 312 and the upper surface electrode 313. The other end of each wire 390 is bonded to an appropriate position on the wiring layer 240.
　基板２００と第一ＬＥＤチップ３１０との間には、サブマウント基板３０１が設けられている。サブマウント基板３０１は、頂面３０１ａを有している。頂面３０１ａは、主面２１１と平行であり、第一ＬＥＤチップ３１０を支持している。サブマウント基板３０１は、たとえばＳｉからなり、その厚さがたとえば３００μｍ程度である。本実施形態においては、第一ＬＥＤチップ３１０は、サブマウント基板３０１を介して基材２１０の主面２１１に間接的に支持されている。サブマウント基板３０１と配線層２４０とは、金属接合層３４１を介して接合されている。本実施形態においては、金属接合層３４１は、たとえばＡｇからなる。また、第一ＬＥＤチップ３１０とサブマウント基板３０１とは、たとえばＳｉあるいはエポキシ樹脂からなる接合層３４２を介して接合されている。本実施形態においては、サブマウント基板３０１によって本発明で言う台座部が構成されている。 A submount substrate 301 is provided between the substrate 200 and the first LED chip 310. The submount substrate 301 has a top surface 301a. The top surface 301 a is parallel to the main surface 211 and supports the first LED chip 310. The submount substrate 301 is made of, for example, Si and has a thickness of, for example, about 300 μm. In the present embodiment, the first LED chip 310 is indirectly supported on the main surface 211 of the base 210 via the submount substrate 301. The submount substrate 301 and the wiring layer 240 are bonded via a metal bonding layer 341. In the present embodiment, the metal bonding layer 341 is made of, for example, Ag. The first LED chip 310 and the submount substrate 301 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin. In the present embodiment, the submount substrate 301 constitutes a pedestal portion referred to in the present invention.
　第二ＬＥＤチップ３２０は、図１８および図２０に示すように、チップ基板３２３、半導体層３２４、下面電極３２１および上面電極３２２を有する。チップ基板３２３は、たとえばＧａＡｓからなり、その厚さがたとえば１８０～２５０μｍ程度である。半導体層３２４は、チップ基板３２３の図中上面に積層されており、たとえばＧａＡｓ系の半導体材料からなる。半導体層３２４の厚さは、たとえば０．５μｍ～２．０μｍ程度である。下面電極３２１は、チップ基板３２３の図中下面に設けられており、たとえばｎ型電極として機能する。下面電極３２１は、たとえばＡｕメッキ層によって形成されている。上面電極３２２は、半導体層３２４の図中上面に設けられており、たとえばｐ型電極として機能する。上面電極３２２は、たとえばＡｕメッキ層によって形成されている。このような構成により、第二ＬＥＤチップ３２０は、赤色光を発する。なお、本発明で言う赤色光は、その波長域がたとえば６００ｎｍ～６７０ｎｍ程度である。 The second LED chip 320 includes a chip substrate 323, a semiconductor layer 324, a lower surface electrode 321 and an upper surface electrode 322 as shown in FIGS. The chip substrate 323 is made of, for example, GaAs and has a thickness of, for example, about 180 to 250 μm. The semiconductor layer 324 is stacked on the upper surface of the chip substrate 323 in the figure, and is made of, for example, a GaAs-based semiconductor material. The thickness of the semiconductor layer 324 is, for example, about 0.5 μm to 2.0 μm. The lower surface electrode 321 is provided on the lower surface of the chip substrate 323 in the figure, and functions as, for example, an n-type electrode. The lower electrode 321 is formed of, for example, an Au plating layer. The upper surface electrode 322 is provided on the upper surface of the semiconductor layer 324 in the figure and functions as, for example, a p-type electrode. The upper surface electrode 322 is formed of, for example, an Au plating layer. With such a configuration, the second LED chip 320 emits red light. In the present invention, the red light has a wavelength range of, for example, about 600 nm to 670 nm.
　下面電極３２１は、金属接合層３４１を介して配線層２４０に接合されている。金属接合層３４１は、たとえばＡｇペーストからなる。あるいは、下面電極３２１と配線層２４０とを共晶接合することによって、金属接合層３４１が形成されてもよい。上面電極３２２には、ワイヤ３９０の一端がボンディングされている。ワイヤ３９０の他端は、配線層２４０の適所にボンディングされている。 The lower surface electrode 321 is bonded to the wiring layer 240 through the metal bonding layer 341. The metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 321 and the wiring layer 240. One end of a wire 390 is bonded to the upper surface electrode 322. The other end of the wire 390 is bonded to an appropriate position on the wiring layer 240.
　被覆樹脂４１０は、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０を除き、ケース５００によって囲まれた領域を覆っている。被覆樹脂４１０の材質は特に限定されないが、本実施形態においては、たとえば酸化チタンが混入されたシリコーン樹脂などの白色樹脂からなる。 The coating resin 410 covers the area surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320. The material of the coating resin 410 is not particularly limited, but in the present embodiment, it is made of a white resin such as a silicone resin mixed with titanium oxide.
　図１９に示すように、被覆樹脂４１０は、サブマウント基板３０１の側面のほとんどを覆っている。サブマウント基板３０１の側面は、その一部あるいは全てが被覆樹脂４１０によって覆われていることが好ましい。一方、サブマウント基板３０１の頂面３０１ａは、被覆樹脂４１０から露出していることが好ましい。 As shown in FIG. 19, the coating resin 410 covers most of the side surfaces of the submount substrate 301. The side surface of the submount substrate 301 is preferably partially or entirely covered with the coating resin 410. On the other hand, the top surface 301 a of the submount substrate 301 is preferably exposed from the coating resin 410.
　図２０に示すように、被覆樹脂４１０は、第二ＬＥＤチップ３２０の側面の少なくとも一部を覆っている。この側面は、主面２１１が向く方向（ｚ方向）と交差する方向を向く面の一例であり、本実施形態においては、ｚ方向に対して垂直である方向（ｘｙ平面に含まれる方向）を向いている。また、本実施形態においては、第二ＬＥＤチップ３２０のうち、チップ基板３２３の側面の少なくとも一部が被覆樹脂４１０によって覆われており、より具体的には、チップ基板３２３の側面のほぼ全体が被覆樹脂４１０によって覆われている。一方、半導体層３２４については、その側面が被覆樹脂４１０によって覆われることは許容されるが、その上面は全体が被覆樹脂４１０から露出することが好ましい。 As shown in FIG. 20, the coating resin 410 covers at least a part of the side surface of the second LED chip 320. This side surface is an example of a surface that faces a direction that intersects the direction (z direction) in which the main surface 211 faces, and in the present embodiment, a direction that is perpendicular to the z direction (direction included in the xy plane). It is suitable. In the present embodiment, in the second LED chip 320, at least a part of the side surface of the chip substrate 323 is covered with the coating resin 410, and more specifically, almost the entire side surface of the chip substrate 323 is covered. It is covered with a coating resin 410. On the other hand, the side surface of the semiconductor layer 324 is allowed to be covered with the coating resin 410, but the entire upper surface is preferably exposed from the coating resin 410.
　図１８に示すように、被覆樹脂４１０は、その外端縁がケース５００の反射面５０１に接している。本実施形態においては、被覆樹脂４１０とケース５００との接合部分のうち主面２１１からｚ方向上方に最も離間した部位は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０のいずれの部位よりも主面２１１からｚ方向上方に離間している。すなわち、被覆樹脂４１０とケース５００との接合部分のうち主面２１１からｚ方向上方に最も離間した部位と主面２１１との距離Ｈ０は、第一ＬＥＤチップ３１０のうち主面２１１から最も離間した部位と主面２１１との距離Ｈ１、および第二ＬＥＤチップ３２０のうち主面２１１から最も離間した部位と主面２１１との距離Ｈ２のいずれよりも大となっている。 As shown in FIG. 18, the outer edge of the coating resin 410 is in contact with the reflection surface 501 of the case 500. In the present embodiment, the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 in the z-direction upward is the main portion of any portion of the first LED chip 310 and the second LED chip 320. The surface 211 is spaced upward in the z direction. That is, the distance H0 between the main surface 211 and the portion of the joint portion between the coating resin 410 and the case 500 that is farthest upward in the z direction from the main surface 211 is farthest from the main surface 211 of the first LED chip 310. The distance H1 between the part and the main surface 211 and the distance H2 between the part of the second LED chip 320 farthest from the main surface 211 and the main surface 211 are larger.
　被覆樹脂４１０は、反射面４１１を有している。反射面４１１は、サブマウント基板３０１および第二ＬＥＤチップ３２０の上面付近からケース５００の反射面５０１に向かうほどｚ方向において基材２１０から遠ざかるようになだらかに傾斜している。 The coating resin 410 has a reflective surface 411. The reflective surface 411 is gently inclined so as to move away from the base material 210 in the z direction from the vicinity of the upper surfaces of the submount substrate 301 and the second LED chip 320 toward the reflective surface 501 of the case 500.
　封止樹脂４２０は、ケース５００によって囲まれた領域において、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を覆っている。封止樹脂４２０は、たとえば透明なエポキシ樹脂またはシリコーン樹脂などに蛍光材料が混入された材質からなる。この蛍光材料は、たとえば第一ＬＥＤチップ３１０からの青色光によって励起されることにより、緑色光を発する。なお、本発明で言う緑色光は、その波長域がたとえば５００ｎｍ～５６５ｎｍ程度である。 The sealing resin 420 covers the first LED chip 310 and the second LED chip 320 in the region surrounded by the case 500. The sealing resin 420 is made of a material in which a fluorescent material is mixed in, for example, a transparent epoxy resin or silicone resin. This fluorescent material emits green light by being excited by blue light from the first LED chip 310, for example. The green light referred to in the present invention has a wavelength range of, for example, about 500 nm to 565 nm.
　本実施形態においては、封止樹脂４２０に含まれる上記蛍光材料は、硫化物系の蛍光材料である。硫化物系の蛍光材料は、カルシウムサルファイド（ＣａＳ）、ジンクサルファイド（ＺｎＳ）、ストロンチウムサルファイド（ＳｒＳ）、ストロンチウムチオガレート（ＳｒＧａ２Ｓ４）、および、カルシウムチオガレート（ＣａＧａ２Ｓ４）からなる群より選択される１以上の硫化物を含む。蛍光体を構成する硫化物系の蛍光材料は、Ｅｕ、Ｔｂ、Ｓｍ、Ｐｒ、Ｄｙ、およびＴｍのうちの少なくとも一元素がドーピングされた材料である。 In the present embodiment, the fluorescent material contained in the sealing resin 420 is a sulfide-based fluorescent material. The sulfide-based fluorescent material is one or more selected from the group consisting of calcium sulfide (CaS), zinc sulfide (ZnS), strontium sulfide (SrS), strontium thiogallate (SrGa2S4), and calcium thiogallate (CaGa2S4). Of sulfides. The sulfide-based fluorescent material constituting the phosphor is a material doped with at least one element of Eu, Tb, Sm, Pr, Dy, and Tm.
　緑色光を発する蛍光材料の場合、上記蛍光材料は、たとえば、ユーロピウムがドーピングされたストロンチウムチオガレート（ＳｒＧａ2Ｓ4：Ｅｕ）、または、ユーロピウムがドーピングされたカルシウムチオガレート（ＣａＧａ2Ｓ4：Ｅｕ）よりなる。緑色光を発する蛍光材料にドーピングされる元素は、Ｅｕに限定されず、Ｔｂ、Ｓｍ、Ｐｒ、Ｄｙ、およびＴｍのいずれかであってもよい。 In the case of a fluorescent material that emits green light, the fluorescent material is, for example, strontium thiogallate doped with europium (SrGa 2 S 4 : Eu) or calcium thiogallate doped with europium (CaGa 2 S 4 : Eu). ). The element doped in the fluorescent material emitting green light is not limited to Eu, and may be any of Tb, Sm, Pr, Dy, and Tm.
　次に、ＬＥＤ光源モジュール１０６の作用について説明する。 Next, the operation of the LED light source module 106 will be described.
　本実施形態によれば、第一ＬＥＤチップ３１０から発せられた光のうちｘｙ平面に略沿って進行する光が、第二ＬＥＤチップ３２０の側面に到達することを、被覆樹脂４１０によって抑制することができる。このため、第一ＬＥＤチップ３１０からの光をより多く出射させることが可能であり、ＬＥＤ光源モジュール１０６の高輝度化あるいは色調の多彩化を図ることができる。特に、第一ＬＥＤチップ３１０よりも長い波長の光を発する第二ＬＥＤチップ３２０は、第一ＬＥＤチップ３１０からの光を吸収しやすい特性を有する。このため、被覆樹脂４１０によって第二ＬＥＤチップ３２０を覆うことは、光の吸収を抑制するのに適している。 According to the present embodiment, the coating resin 410 prevents light traveling substantially along the xy plane among the light emitted from the first LED chip 310 from reaching the side surface of the second LED chip 320. Can do. For this reason, it is possible to emit more light from the first LED chip 310, and it is possible to increase the brightness or diversify the color tone of the LED light source module 106. In particular, the second LED chip 320 that emits light having a wavelength longer than that of the first LED chip 310 has a characteristic of easily absorbing light from the first LED chip 310. For this reason, covering the second LED chip 320 with the coating resin 410 is suitable for suppressing light absorption.
　チップ基板３２３は、第二ＬＥＤチップ３２０の大部分を占める部位である。また、チップ基板３２３の材質であるＧａＡｓは、第一ＬＥＤチップ３１０からの青色光を特に吸収しやすい。このチップ基板３２３を被覆樹脂４１０によって覆うことは、第一ＬＥＤチップ３１０からの青色光が吸収されることを抑制するのに合理的である。 The chip substrate 323 is a part that occupies most of the second LED chip 320. Further, GaAs which is a material of the chip substrate 323 is particularly easy to absorb blue light from the first LED chip 310. Covering the chip substrate 323 with the coating resin 410 is reasonable for suppressing the blue light from the first LED chip 310 from being absorbed.
　半導体層３２４は、チップ基板３２３よりも顕著に薄いものであり、第二ＬＥＤチップ３２０のほぼ上面のみを占めるものである。少なくとも、半導体層３２４の上面を被覆樹脂４１０から露出させることにより、第二ＬＥＤチップ３２０からの赤色光のほとんどを適切にｚ方向上方へと出射させることができる。 The semiconductor layer 324 is significantly thinner than the chip substrate 323, and occupies only substantially the upper surface of the second LED chip 320. By exposing at least the upper surface of the semiconductor layer 324 from the coating resin 410, most of the red light from the second LED chip 320 can be appropriately emitted upward in the z direction.
　封止樹脂４２０は、第一ＬＥＤチップ３１０からの光によって励起されることにより緑色光を発する。この緑色光は、第二ＬＥＤチップ３２０からの赤色光よりも波長が短い。このため、第二ＬＥＤチップ３２０によってこの緑色光も吸収されうる。本実施形態によれば、被覆樹脂４１０によって封止樹脂４２０からの緑色光が吸収されることを抑制することが可能である。これは、ＬＥＤ光源モジュール１０６からの白色光を所望の色合いとするのに有利である。 The sealing resin 420 emits green light when excited by light from the first LED chip 310. This green light has a shorter wavelength than the red light from the second LED chip 320. For this reason, the green light can also be absorbed by the second LED chip 320. According to this embodiment, it is possible to suppress the green light from the sealing resin 420 from being absorbed by the coating resin 410. This is advantageous for making the white light from the LED light source module 106 have a desired hue.
　また、封止樹脂４２０は、硫化物からなる蛍光材料を含んでいる。このような硫化物は、鮮やかな緑色光を発するのに良好な特性を有する一方、多くの金属を硫化させる点が懸念される。本実施形態においては、硫化を受けうる配線層２４０が、被覆樹脂４１０によって覆われており、封止樹脂４２０からは隔離されている。このため、配線層２４０は硫化を受けるおそれが非常に少ない。 The sealing resin 420 includes a fluorescent material made of sulfide. While such a sulfide has good characteristics for emitting vivid green light, there is a concern that many metals are sulfided. In the present embodiment, the wiring layer 240 that can undergo sulfuration is covered with the coating resin 410 and is isolated from the sealing resin 420. For this reason, the wiring layer 240 is very unlikely to be subjected to sulfurization.
　被覆樹脂４１０は、第一ＬＥＤチップ３１０を支持するサブマウント基板３０１の一部を覆っている。Ｓｉからなるサブマウント基板３０１は、第二ＬＥＤチップ３２０からの赤色光や封止樹脂４２０からの緑色光を吸収しうる。被覆樹脂４１０は、これらの赤色光や緑色光が吸収されることを抑制するのに適している。また、被覆樹脂４１０は、サブマウント基板３０１の側面を積極的に覆うものの、サブマウント基板３０１の上面は露出させることが意図されている。これにより、被覆樹脂４１０が誤って第一ＬＥＤチップ３１０を覆ってしまうことを回避可能である。 The coating resin 410 covers a part of the submount substrate 301 that supports the first LED chip 310. The submount substrate 301 made of Si can absorb red light from the second LED chip 320 and green light from the sealing resin 420. The coating resin 410 is suitable for suppressing the absorption of these red light and green light. The coating resin 410 is intended to expose the upper surface of the submount substrate 301 while actively covering the side surface of the submount substrate 301. Thereby, it is possible to avoid the covering resin 410 from accidentally covering the first LED chip 310.
　被覆樹脂４１０は、ケース５００の反射面５０１の少なくとも一部を覆っている。特に、距離Ｈ０が、距離Ｈ１および距離Ｈ２に対して上述した関係とされることにより、被覆樹脂４１０はケース５００の反射面５０１の大部分を覆う構成となっている。これにより、第一ＬＥＤチップ３１０からの青色光、第二ＬＥＤチップ３２０からの赤色光および封止樹脂４２０からの緑色光がケース５００に到達することを抑制することができる。ケース５００の材質として好適なエポキシ樹脂は、被覆樹脂４１０の材質として好適なシリコーン樹脂よりも光による劣化が顕著である。本実施形態によれば、ケース５００が光によって劣化されることを抑制可能であり、より長期間においてＬＥＤ光源モジュール１０６を適切に発光させることができる。 The covering resin 410 covers at least a part of the reflection surface 501 of the case 500. In particular, since the distance H0 has the relationship described above with respect to the distance H1 and the distance H2, the coating resin 410 is configured to cover most of the reflective surface 501 of the case 500. Thereby, blue light from the first LED chip 310, red light from the second LED chip 320, and green light from the sealing resin 420 can be prevented from reaching the case 500. The epoxy resin suitable as the material of the case 500 is more significantly deteriorated by light than the silicone resin suitable as the material of the coating resin 410. According to the present embodiment, the case 500 can be prevented from being deteriorated by light, and the LED light source module 106 can appropriately emit light over a longer period.
　図２１～図３０は、本発明に係るＬＥＤ光源モジュールの他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 21 to 30 show other embodiments of the LED light source module according to the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
　図２１は、本発明の第七実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０７においては、基板２００の絶縁層２３０に開口２３１が形成されている。開口２３１は、たとえばｚ方向視矩形状であり、基材２１０の主面２１１の一部を露出させている。この主面２１１の露出部分に、メッキ層２２０が形成されている。メッキ層２２０は、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなり、本実施形態においては、Ｎｉ，Ｐｄ，Ａｕが積層されている。サブマウント基板３０１は、金属接合層３４１を介してメッキ層２２０に接合されている。 FIG. 21 shows an LED light source module according to the seventh embodiment of the present invention. In the LED light source module 107 of this embodiment, an opening 231 is formed in the insulating layer 230 of the substrate 200. The opening 231 has, for example, a rectangular shape as viewed in the z direction, and exposes a part of the main surface 211 of the substrate 210. A plating layer 220 is formed on the exposed portion of the main surface 211. The plated layer 220 is made of a metal such as Cu, Ni, Pd, or Au, and in the present embodiment, Ni, Pd, and Au are laminated. The submount substrate 301 is bonded to the plating layer 220 via the metal bonding layer 341.
　また、本実施形態においては、配線層２４０は、下地層２５１およびメッキ層２５２からなる。下地層２５１は、絶縁層２３０上に直接形成されており、たとえばＣｕ箔が貼り付けられた層である。なお、下地層２５１をメッキによって形成してもよい。メッキ層２５２は、下地層２５１上に形成されており、本実施形態においては、Ｎｉ，Ｐｄ，Ａｕが積層されている。メッキ層２５２と上述したメッキ層２２０とは、同一のメッキ工程によって形成することができる。 In the present embodiment, the wiring layer 240 is composed of the base layer 251 and the plating layer 252. The underlayer 251 is formed directly on the insulating layer 230 and is a layer to which, for example, a Cu foil is attached. Note that the base layer 251 may be formed by plating. The plating layer 252 is formed on the base layer 251. In this embodiment, Ni, Pd, and Au are laminated. The plating layer 252 and the plating layer 220 described above can be formed by the same plating process.
　本実施形態の被覆樹脂４１０は、上述した実施形態と同様に、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０を除き、ケース５００によって囲まれた領域を覆っている。しかしながら、被覆樹脂４１０とケース５００との接合部分は、ｚ方向における厚さが比較的薄いものとされている。このため、被覆樹脂４１０とケース５００との接合部分のうち主面２１１から最も離間した部位は、ｚ方向において第一ＬＥＤチップ３１０あるいはサブマウント基板３０１や第二ＬＥＤチップ３２０と重なる高さにある。 The covering resin 410 of this embodiment covers the region surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320, as in the above-described embodiment. However, the joint portion between the coating resin 410 and the case 500 has a relatively small thickness in the z direction. Therefore, the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 is at a height that overlaps the first LED chip 310 or the submount substrate 301 or the second LED chip 320 in the z direction. .
　このような実施形態によっても、ＬＥＤ光源モジュール１０７の高輝度化や色調の多彩化を図ることができる。また、本実施形態においては、サブマウント基板３０１は、絶縁層２３０を介すること無く基材２１０に支持されている。これにより、第一ＬＥＤチップ３１０からの熱をより効率よく基材２１０へと伝えることができる。さらに、基材２１０は、良好な熱伝導率を有するＡｌからなる。これにより、第一ＬＥＤチップ３１０の高輝度化、あるいは経年変化の抑制を図ることができる。 Also according to such an embodiment, the LED light source module 107 can have high brightness and various color tones. In the present embodiment, the submount substrate 301 is supported by the base member 210 without the insulating layer 230 interposed therebetween. Thereby, the heat from the first LED chip 310 can be transmitted to the base material 210 more efficiently. Further, the substrate 210 is made of Al having a good thermal conductivity. Thereby, the brightness of the first LED chip 310 can be increased, or the secular change can be suppressed.
　本実施形態においては、被覆樹脂４１０は、上述したＬＥＤ光源モジュール１０６とは異なり、ケース５００との接合部分の高さが相対的に低い構成とされている。しかし、このような構成であっても、第二ＬＥＤチップ３２０の側面やサブマウント基板３０１の側面が覆われていることにより、被覆樹脂４１０は高輝度化や色調の多彩化に寄与しうる。また、配線層２４０が被覆樹脂４１０で覆われていることにより硫化から保護される点についても同様の効果が期待できる。このように、被覆樹脂４１０の形成形態は、ＬＥＤ光源モジュール１０６の形態がより好ましいものの、本実施形態における形態も取りうるものであり、以降の実施形態においては、いずれの形態であっても適用しうる。 In the present embodiment, unlike the LED light source module 106 described above, the coating resin 410 is configured such that the height of the joint portion with the case 500 is relatively low. However, even with such a configuration, since the side surface of the second LED chip 320 and the side surface of the submount substrate 301 are covered, the coating resin 410 can contribute to high brightness and a wide variety of colors. Further, the same effect can be expected in that the wiring layer 240 is protected from sulfurization by being covered with the coating resin 410. Thus, although the form of the coating resin 410 is more preferably the form of the LED light source module 106, the form of the present embodiment can also be taken. In the following embodiments, any form is applicable. Yes.
　図２２および図２３は、本発明の第八実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０８は、基板２００の構成が上述した実施形態と異なっている。 22 and 23 show an LED light source module according to the eighth embodiment of the present invention. The LED light source module 108 of the present embodiment is different from the above-described embodiment in the configuration of the substrate 200.
　基板２００は、基材２１０、メッキ層２２０、絶縁層２３０および配線層２４０からなる。 The substrate 200 includes a base 210, a plating layer 220, an insulating layer 230, and a wiring layer 240.
　基材２１０は、ｘ方向およびｙ方向に広がり、たとえばｘ方向に長く延びる長矩形状の金属板であり、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、基材２１０の材質としてＡｌが選択されており、基材２１０の厚さはたとえば１．０～１．５ｍｍ程度である。基材２１０は、主面２１１および裏面２１５を有する。主面２１１および裏面２１５は、ｚ方向において互いに反対方向を向く。基材２１０には、隆起部２１２および陥没部２１６が形成されている。 The substrate 210 is a long rectangular metal plate that extends in the x direction and the y direction and extends in the x direction, for example, and is made of, for example, Al, Cu, Fe, or the like. In the present embodiment, Al is selected as the material of the substrate 210, and the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm. The substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction. A raised portion 212 and a depressed portion 216 are formed on the substrate 210.
　隆起部２１２は、主面２１１よりもｚ方向上方に隆起した部位であり、本実施形態においては、頂面２１３および傾斜面２１４を有する。頂面２１３は、隆起部２１２のうちｚ方向上方にもっとも突出した部位の表面であり、主面２１１と平行である。本実施形態においては、頂面２１３は、矩形状である。傾斜面２１４は、主面２１１と頂面２１３とに繋がっており、ｘｙ平面に対して傾斜している。隆起部２１２の主面２１１からの隆起高さは、たとえば１５０～２００μｍである。本実施形態においては、隆起部２１２によって、本発明で言う台座部が構成されている。 The raised portion 212 is a portion raised above the main surface 211 in the z direction, and has a top surface 213 and an inclined surface 214 in the present embodiment. The top surface 213 is the surface of the protruding portion 212 that protrudes most upward in the z direction, and is parallel to the main surface 211. In the present embodiment, the top surface 213 has a rectangular shape. The inclined surface 214 is connected to the main surface 211 and the top surface 213, and is inclined with respect to the xy plane. The height of the raised portion 212 from the main surface 211 is, for example, 150 to 200 μm. In the present embodiment, the raised portion 212 constitutes a pedestal portion referred to in the present invention.
　陥没部２１６は、裏面２１５よりもｚ方向上方に凹んだ部位であり、ｚ方向視において隆起部２１２と重なっている。本実施形態においては、陥没部２１６は、底面２１７を有している。底面２１７は、裏面２１５と平行であり、本実施形態においては、矩形状である。ｚ方向視において、底面２１７は、隆起部２１２に内包されている。また底面２１７と頂面２１３とは、ｚ方向視においてそれぞれの外縁が互いにほとんど重なっているか、底面２１７の外縁が頂面２１３の外縁に対して若干内側に位置している。陥没部２１６の裏面２１５からの陥没深さは、たとえば１５０～２００μｍである。 The depressed portion 216 is a portion that is recessed above the back surface 215 in the z direction, and overlaps the raised portion 212 when viewed in the z direction. In the present embodiment, the depressed portion 216 has a bottom surface 217. The bottom surface 217 is parallel to the back surface 215 and has a rectangular shape in the present embodiment. When viewed in the z direction, the bottom surface 217 is included in the raised portion 212. Further, the bottom surface 217 and the top surface 213 have their outer edges almost overlapping each other when viewed in the z direction, or the outer edge of the bottom surface 217 is located slightly inside the outer edge of the top surface 213. The depression depth from the back surface 215 of the depression 216 is, for example, 150 to 200 μm.
　メッキ層２２０は、隆起部２１２の頂面２１３を覆っており、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。本実施形態においては、メッキ層２２０は、Ｎｉ，Ｐｄ，Ａｕが積層されている。 The plated layer 220 covers the top surface 213 of the raised portion 212 and is made of a metal such as Cu, Ni, Pd, or Au. In the present embodiment, the plating layer 220 is laminated with Ni, Pd, and Au.
　絶縁層２３０は、基材２１０の主面２１１を覆っており、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０には、開口２３１が形成されている。開口２３１は、隆起部２１２の少なくとも一部を露出させるために設けられており、本実施形態においては、隆起部２１２の頂面２１３を露出させている。一方、隆起部２１２の傾斜面２１４は、絶縁層２３０によって覆われている。絶縁層２３０の厚さは、たとえば１００μｍ程度である。 The insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 . An opening 231 is formed in the insulating layer 230. The opening 231 is provided to expose at least a part of the raised portion 212, and in the present embodiment, the top surface 213 of the raised portion 212 is exposed. On the other hand, the inclined surface 214 of the raised portion 212 is covered with the insulating layer 230. The thickness of the insulating layer 230 is, for example, about 100 μm.
　配線層２４０は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０への導通経路を形成するものであり、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。配線層２４０は、絶縁層２３０上に形成されており、本実施形態においては、絶縁層２３０のうち主面２１１を覆う平坦な部位に形成されている。図２２に示すように、本実施形態においては、配線層２４０は、下地層２５１とメッキ層２５２とを有している。下地層２５１は、絶縁層２３０上に形成されており、たとえばＣｕからなる。メッキ層２５２は、下地層２５１上に形成されており、メッキ層２２０と同様にＮｉ，Ｐｄ，Ａｕが積層されている。後述するように、本実施形態においては、配線層２４０のメッキ層２５２と基板２００のメッキ層２２０とは同一の工程によって一括して形成される。 The wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au. The wiring layer 240 is formed on the insulating layer 230. In the present embodiment, the wiring layer 240 is formed on a flat portion of the insulating layer 230 that covers the main surface 211. As shown in FIG. 22, in the present embodiment, the wiring layer 240 has a base layer 251 and a plating layer 252. The underlayer 251 is formed on the insulating layer 230 and is made of, for example, Cu. The plating layer 252 is formed on the base layer 251, and Ni, Pd, and Au are laminated similarly to the plating layer 220. As will be described later, in the present embodiment, the plating layer 252 of the wiring layer 240 and the plating layer 220 of the substrate 200 are collectively formed by the same process.
　第一サブマウント基板３０１は、メッキ層２２０を介して、隆起部２１２の頂面２１３に支持されている。第一サブマウント基板３０１とメッキ層２２０とは、金属接合層３４１によって接合されている。 The first submount substrate 301 is supported on the top surface 213 of the raised portion 212 via the plating layer 220. The first submount substrate 301 and the plating layer 220 are bonded by a metal bonding layer 341.
　次に、ＬＥＤ光源モジュール１０８の製造方法の一例について、図２４～図２８を参照しつつ以下に説明する。 Next, an example of a method for manufacturing the LED light source module 108 will be described below with reference to FIGS.
　まず、図２４に示すように金属板２１０’を用意する。金属板２１０’は、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、金属板２１０’の材質としてＡｌが選択されており、金属板２１０’の厚さはたとえば１．０～１．５ｍｍ程度である。金属板２１０’は、ｚ方向において互いに反対方向を向く主面２１１’および裏面２１５’を有する。次いで、主面２１１’を覆うように絶縁層２３０’を形成する。絶縁層２３０’は、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０’の厚さは、たとえば１００μｍ程度である。次いで、絶縁層２３０’を覆うように下地層２５１’を形成する。下地層２５１’の形成は、たとえば絶縁層２３０’上にＣｕ箔を貼り付けることによってなされる。 First, a metal plate 210 ′ is prepared as shown in FIG. The metal plate 210 ′ is made of, for example, Al, Cu, Fe or the like. In the present embodiment, Al is selected as the material of the metal plate 210 ′, and the thickness of the metal plate 210 ′ is, for example, about 1.0 to 1.5 mm. The metal plate 210 ′ has a main surface 211 ′ and a back surface 215 ′ that face in opposite directions in the z direction. Next, an insulating layer 230 ′ is formed so as to cover the main surface 211 ′. The insulating layer 230 ′ is made of an insulating resin or an insulating material such as SiO 2 . The thickness of the insulating layer 230 ′ is, for example, about 100 μm. Next, a base layer 251 ′ is formed so as to cover the insulating layer 230 ′. The underlayer 251 ′ is formed, for example, by attaching a Cu foil on the insulating layer 230 ′.
　次いで、下地層２５１’にたとえばエッチングを用いたパターニングを施すことにより、図２５に示すように下地層２５１を形成する。なお、あらかじめパターニングが施されたＣｕ箔を絶縁層２３０’に貼り付けることによって下地層２５１を形成してもよい。次いで、図２６に示すように、金型６１０，６２０を用いて金属板２１０’を加工する。金型６１０は、上面が矩形状である。金型６２０は、矩形状の凹部６２１を有している。凹部６２１は、ｚ方向視において金型６１０の上面よりも若干大となっている。金属板２１０’の裏面２１５’側に金型６１０を配置し、金属板２１０’の主面２１１’側に金型６２０を配置する。そして、金型６１０と金型６２０とを接近させることにより、金属板２１０’に金型６１０の上面を嵌入させる。これにより、隆起部２１２と陥没部２１６とを有する基材２１０が得られる。金型６１０の上面が接していた部位が陥没部２１６の底面２１７となる。また、金型６１０に対応して金型６２０の凹部６２１に進入した部位の表面が頂面２１３となる。この際、本実施形態においては、下地層２５１は、金型６２０のうち凹部６２１を避けた位置と当接しており、変形されない。絶縁層２３０’は、隆起部２１２に沿った形状に変形される。 Next, the base layer 251 'is patterned by using, for example, etching to form the base layer 251 as shown in FIG. Note that the base layer 251 may be formed by attaching a Cu foil that has been patterned in advance to the insulating layer 230 ′. Next, as shown in FIG. 26, the metal plate 210 ′ is processed using the molds 610 and 620. The mold 610 has a rectangular top surface. The mold 620 has a rectangular recess 621. The recess 621 is slightly larger than the upper surface of the mold 610 when viewed in the z direction. A metal mold 610 is disposed on the back surface 215 ′ side of the metal plate 210 ′, and a metal mold 620 is disposed on the main surface 211 ′ side of the metal plate 210 ′. Then, the upper surface of the mold 610 is fitted into the metal plate 210 ′ by bringing the mold 610 and the mold 620 closer to each other. Thereby, the base material 210 which has the protruding part 212 and the depression part 216 is obtained. A portion where the upper surface of the mold 610 is in contact becomes a bottom surface 217 of the depressed portion 216. Further, the surface of the portion that has entered the recess 621 of the mold 620 corresponding to the mold 610 becomes the top surface 213. At this time, in this embodiment, the base layer 251 is in contact with a position where the concave portion 621 is avoided in the mold 620 and is not deformed. The insulating layer 230 ′ is deformed into a shape along the raised portion 212.
　次いで、絶縁層２３０’の一部を除去することにより、図２７に示すように絶縁層２３０を形成する。絶縁層２３０’の一部を除去する処理は、たとえばスキージ６３０を用いてなされる。スキージ６３０の下端縁は、ｙ方向に平行に長く延びている。このスキージ６３０の下端縁をｚ方向において頂面２１３と同じか、若干下方に位置させた状態で、スキージ６３０をｘ方向に移動させる。これにより、絶縁層２３０’のうち頂面２１３よりもｚ方向上方に位置する部分がスキージ６３０によって除去される。この結果、頂面２１３のみを露出させる開口２３１を有する絶縁層２３０が形成される。本実施形態においては、下地層２５１は、頂面２１３よりも十分にｚ方向下方に位置するため、スキージ６３０には接触しない。 Next, by removing a part of the insulating layer 230 ', the insulating layer 230 is formed as shown in FIG. The process of removing a part of the insulating layer 230 ′ is performed using, for example, a squeegee 630. The lower end edge of the squeegee 630 extends long in parallel to the y direction. The squeegee 630 is moved in the x direction while the lower edge of the squeegee 630 is located at the same level as or slightly below the top surface 213 in the z direction. As a result, the portion of the insulating layer 230 ′ located above the top surface 213 in the z direction is removed by the squeegee 630. As a result, the insulating layer 230 having the opening 231 exposing only the top surface 213 is formed. In the present embodiment, the base layer 251 is located sufficiently below the top surface 213 in the z direction, and thus does not contact the squeegee 630.
　次いで、図２８に示すように、メッキ層２２０およびメッキ層２５２を形成する。メッキ層２２０およびメッキ層２５２は、たとえば電解メッキによって形成される。このため、導電体である基材２１０の頂面２１３および下地層２５１を覆うように、ともにＮｉ，Ｐｄ，Ａｕからなるメッキ層２２０および下地層２５１が形成され、絶縁層２３０上には形成されない。以上の工程を経ることにより、基材２１０、メッキ層２２０、絶縁層２３０および配線層２４０からなる基板２００が得られる。 Next, as shown in FIG. 28, a plating layer 220 and a plating layer 252 are formed. The plated layer 220 and the plated layer 252 are formed by, for example, electrolytic plating. Therefore, the plating layer 220 and the base layer 251 made of Ni, Pd, Au are formed so as to cover the top surface 213 and the base layer 251 of the base material 210, which is a conductor, and is not formed on the insulating layer 230. . Through the above steps, the substrate 200 including the base 210, the plating layer 220, the insulating layer 230, and the wiring layer 240 is obtained.
　この後は、ケース５００の形成、第一サブマウント基板３０１および第一ＬＥＤチップ３１０の搭載、第二ＬＥＤチップ３２０の搭載、被覆樹脂４１０の形成、ワイヤ３９０のボンディングおよび封止樹脂４２０の形成を経ることにより、ＬＥＤ光源モジュール１０８が得られる。 Thereafter, the case 500 is formed, the first submount substrate 301 and the first LED chip 310 are mounted, the second LED chip 320 is mounted, the coating resin 410 is formed, the wire 390 is bonded, and the sealing resin 420 is formed. As a result, the LED light source module 108 is obtained.
　このような実施形態によっても、ＬＥＤ光源モジュール１０８の高輝度化および色調の多彩化を図ることができる。また、サブマウント基板３０１は、絶縁層２３０を介することなく隆起部２１２に支持されている。これにより、第一ＬＥＤチップ３１０からの伝熱が絶縁層２３０によって妨げられることがない。したがって、第一ＬＥＤチップ３１０からの放熱を促進することが可能であり、ＬＥＤ光源モジュール１０８の高輝度化を図ることができる。 Also according to such an embodiment, the LED light source module 108 can be increased in brightness and color tone. Further, the submount substrate 301 is supported by the raised portion 212 without the insulating layer 230 interposed therebetween. Thereby, the heat transfer from the first LED chip 310 is not hindered by the insulating layer 230. Therefore, heat radiation from the first LED chip 310 can be promoted, and the brightness of the LED light source module 108 can be increased.
　配線層２４０は、絶縁層２３０上に形成されており、隆起部２１２（基材２１０）を避けた位置に配置されている。このため、金属からなる基材２１０と配線層２４０とが不当に導通することを回避することができる。 The wiring layer 240 is formed on the insulating layer 230 and is disposed at a position avoiding the raised portion 212 (base material 210). For this reason, it can avoid that the base material 210 and the wiring layer 240 which consist of a metal are unjustly conducted.
　隆起部２１２のうち頂面２１３が絶縁層２３０から露出しており、頂面２１３以外の部分は絶縁層２３０に覆われている。これにより、主面２１１と平行である頂面２１３にサブマウント基板３０１および第一ＬＥＤチップ３１０を搭載する作業を容易に行うことができる。なお、絶縁層２３０の除去方法によっては、頂面２１３のみならず、傾斜部２１４も絶縁層から露出する場合がある。 The top surface 213 of the raised portion 212 is exposed from the insulating layer 230, and portions other than the top surface 213 are covered with the insulating layer 230. Thereby, the operation | work which mounts the submount board | substrate 301 and the 1st LED chip 310 on the top surface 213 parallel to the main surface 211 can be performed easily. Note that depending on the method of removing the insulating layer 230, not only the top surface 213 but also the inclined portion 214 may be exposed from the insulating layer.
　隆起部２１２の裏側に位置する陥没部２１６を有する構成は、図２６に示すように金属板２１０’の裏面２１５’側から金型６１０を押圧することにより容易に隆起部２１２を形成することができるという利点がある。 In the configuration having the depressed portion 216 located on the back side of the raised portion 212, the raised portion 212 can be easily formed by pressing the mold 610 from the back surface 215 'side of the metal plate 210' as shown in FIG. There is an advantage that you can.
　図２９は、本発明の第九実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１０９は、サブマウント基板３０１を備えていない。このため、第一ＬＥＤチップ３１０は、金属接合層３４１を介してメッキ層２２０に接合されている。 FIG. 29 shows an LED light source module according to the ninth embodiment of the present invention. The LED light source module 109 of this embodiment does not include the submount substrate 301. For this reason, the first LED chip 310 is bonded to the plating layer 220 via the metal bonding layer 341.
　また、本実施形態においては、メッキ層２２０は、基材２１０側から順に積層されたＮｉ層、Ｐｄ層およびＡｕ層からなる。上記Ｎｉ層は、頂面２１３に直接形成されており、厚さがたとえば５μｍ程度である。上記Ｐｄ層は上記Ｎｉ層上に形成されており、厚さがたとえば０．１μｍ程度である。上記Ａｕ層は上記Ｐｄ層上に形成されており、厚さがたとえば０．１μｍ程度である。同様に、配線層２４０のメッキ層２５２は、下地層２５１側から順に積層されたＮｉ層、Ｐｄ層およびＡｕ層からなる。これらのＮｉ層、Ｐｄ層およびＡｕ層の構成は、メッキ層２２０と同様である。 In the present embodiment, the plating layer 220 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the base 210 side. The Ni layer is formed directly on the top surface 213 and has a thickness of about 5 μm, for example. The Pd layer is formed on the Ni layer and has a thickness of about 0.1 μm, for example. The Au layer is formed on the Pd layer and has a thickness of about 0.1 μm, for example. Similarly, the plating layer 252 of the wiring layer 240 includes a Ni layer, a Pd layer, and an Au layer that are sequentially stacked from the base layer 251 side. The configurations of these Ni layer, Pd layer, and Au layer are the same as those of the plating layer 220.
　このような実施形態によっても、ＬＥＤ光源モジュール１０９の高輝度化および色調の多彩化を図ることができる。本実施形態においては、配線層２４０のうち第一ＬＥＤチップ３１０が搭載された部分が封止樹脂４２０と接触しうる。しかし、配線層２４０は、その表層が硫化に対する耐性が比較的高いＡｕ層とされている。したがって、配線層２４０が封止樹脂４２０の蛍光材料によって硫化されることを防止することができる。 Also according to such an embodiment, the LED light source module 109 can be increased in luminance and color tone. In the present embodiment, the portion of the wiring layer 240 on which the first LED chip 310 is mounted can contact the sealing resin 420. However, the wiring layer 240 is an Au layer whose surface layer has a relatively high resistance to sulfidation. Therefore, the wiring layer 240 can be prevented from being sulfided by the fluorescent material of the sealing resin 420.
　図３０は、本発明の第十実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１０は、比較的小型のモジュールとして構成されることにより、電子機器の点光源として用いられるものである。この点において、上述したＬＥＤ光源モジュール１０６～１０９が、ｘ方向に長く延びるバー状光源として構成されている点と異なる。 FIG. 30 shows an LED light source module according to the tenth embodiment of the present invention. The LED light source module 110 of this embodiment is used as a point light source of an electronic device by being configured as a relatively small module. In this respect, the LED light source modules 106 to 109 described above are different from those configured as bar-shaped light sources extending in the x direction.
　本実施形態においては、リード２７０、リード２８０、リード２９１およびリード２９２によって本発明で言う導通支持部材が構成されている。リード２７０、リード２８０、リード２９１およびリード２９２は、金属からなり、たとえば母材としてのＣｕ板にＮｉやＡｕなどのメッキが施されている。 In this embodiment, the lead 270, the lead 280, the lead 291 and the lead 292 constitute a conduction support member referred to in the present invention. The lead 270, the lead 280, the lead 291 and the lead 292 are made of metal, for example, a Cu plate as a base material is plated with Ni, Au or the like.
　リード２７０は、主面２７１および端子部２７５を有している。主面２７１は、ｚ方向上方を向いている。端子部２７５は、ＬＥＤ光源モジュール１１０を図示しない回路基板などに実装するために用いられる。リード２９２は、主面２９２ａを有している。主面２９２ａは、ｚ方向上方を向いており第二ＬＥＤチップ３２０を支持している。第二ＬＥＤチップ３２０に一端がボンディングされたワイヤ３９０の他端は、リード２７０の主面２２７１にボンディングされている。リード２９２は、ケース５００から図示しない部位に突出する端子部を有している。 The lead 270 has a main surface 271 and a terminal portion 275. The main surface 271 faces upward in the z direction. The terminal portion 275 is used for mounting the LED light source module 110 on a circuit board (not shown). The lead 292 has a main surface 292a. The main surface 292a faces upward in the z direction and supports the second LED chip 320. The other end of the wire 390 whose one end is bonded to the second LED chip 320 is bonded to the main surface 2271 of the lead 270. The lead 292 has a terminal portion that protrudes from the case 500 to a portion not shown.
　リード２８０は、主面２８１および端子部２８５を有している。主面２８１は、ｚ方向上方を向いており第一ＬＥＤチップ３１０を支持している。端子部２８５は、ＬＥＤ光源モジュール１１０を図示しない回路基板などに実装するために用いられる。リード２９１は、主面２９１ａを有している。主面２９１ａは、ｚ方向上方を向いており第一ＬＥＤチップ３１０に一端がボンディングされたワイヤ３９０の他端がボンディングされている。 The lead 280 has a main surface 281 and a terminal portion 285. The main surface 281 faces upward in the z direction and supports the first LED chip 310. The terminal portion 285 is used for mounting the LED light source module 110 on a circuit board (not shown). The lead 291 has a main surface 291a. The main surface 291a faces upward in the z direction, and the other end of the wire 390 whose one end is bonded to the first LED chip 310 is bonded.
　ケース５００は、リード２７０、リード２８０、リード２９１およびリード２９２の一部ずつを覆っており、これらを相対的に固定する役割を果たしている。 The case 500 covers a part of each of the lead 270, the lead 280, the lead 291 and the lead 292, and plays a role of relatively fixing them.
　このような実施形態によっても、ＬＥＤ光源モジュール１１０の高輝度化および色調の多彩化を図ることができる。 Also according to such an embodiment, it is possible to increase the brightness and diversify the color tone of the LED light source module 110.
　図３１～図３５は、本発明の第十一実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１１は、基板２００、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０、ワイヤ３９１、被覆樹脂４１０、封止樹脂４２０およびケース５００を備えている。ＬＥＤ光源モジュール１１１は、細長い基板２００に複数の第一ＬＥＤチップ３１０および複数の第二ＬＥＤチップ３２０が配置されることにより細長いバー状光源として構成されている。このようなＬＥＤ光源モジュールは、平板状の導光板の側面に正対する位置に配置されることにより、この導光板から面状光を出射するために用いられる。この面状光は、たとえば液晶表示装置のバックライトとして利用される。なお、図３２においては、理解の便宜上、被覆樹脂４１０および封止樹脂４２０を省略している。 31 to 35 show an LED light source module according to the eleventh embodiment of the present invention. The LED light source module 111 of this embodiment includes a substrate 200, a first LED chip 310, a second LED chip 320, wires 391, a coating resin 410, a sealing resin 420, and a case 500. The LED light source module 111 is configured as an elongated bar-shaped light source by arranging a plurality of first LED chips 310 and a plurality of second LED chips 320 on an elongated substrate 200. Such an LED light source module is used to emit planar light from the light guide plate by being disposed at a position facing the side surface of the flat light guide plate. This planar light is used as a backlight of a liquid crystal display device, for example. In FIG. 32, the coating resin 410 and the sealing resin 420 are omitted for convenience of understanding.
　基板２００は、全体としてｘ方向に長く延びる細長形状とされている。この長手方向に沿って、複数のケース５００が配置されている。本実施形態においては、それぞれのケース５００は同一形状であり、後述するケース５００の内部における構成も同一である。 The substrate 200 as a whole has an elongated shape extending in the x direction. A plurality of cases 500 are arranged along the longitudinal direction. In the present embodiment, each case 500 has the same shape, and the configuration inside the case 500 described later is also the same.
　基板２００のｘ方向一端寄り部分は、幅方向寸法が部分的に大となっている。この部分には、コネクタ７９０が搭載されている。コネクタ７９０は、ＬＥＤ光源モジュール１１１を、たとえば液晶表示装置に組み込む際に、電気的な接続をなすために用いられる。 The width direction dimension of the portion near the one end of the substrate 200 in the x direction is partially large. A connector 790 is mounted on this portion. The connector 790 is used to make an electrical connection when the LED light source module 111 is incorporated into, for example, a liquid crystal display device.
　基板２００は、基材２１０、絶縁層２３０、配線層２４０およびレジスト層２６０からなる。 The substrate 200 includes a base 210, an insulating layer 230, a wiring layer 240, and a resist layer 260.
　基材２１０は、ｘ方向に長く延びる略帯状の金属板であり、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、基材２１０の材質としてＡｌが選択されており、基材２１０の厚さはたとえば１．０～１．５ｍｍ程度である。基材２１０は、主面２１１および裏面２１５を有する。主面２１１および裏面２１５は、ｚ方向において互いに反対方向を向く。 The substrate 210 is a substantially strip-shaped metal plate that extends long in the x direction, and is made of, for example, Al, Cu, Fe, or the like. In the present embodiment, Al is selected as the material of the substrate 210, and the thickness of the substrate 210 is, for example, about 1.0 to 1.5 mm. The substrate 210 has a main surface 211 and a back surface 215. The main surface 211 and the back surface 215 are opposite to each other in the z direction.
　絶縁層２３０は、基材２１０の主面２１１を覆っており、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０の厚さは、たとえば１００μｍ程度である。 The insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 . The thickness of the insulating layer 230 is, for example, about 100 μm.
　配線層２４０は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０への導通経路を形成するものであり、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。配線層２４０は、絶縁層２３０上に形成されている。本実施形態においては、配線層２４０は、たとえばＣｕのみからなる。配線層２４０は、第一パッド２４１および第二パッド２４２を有する。第一パッド２４１および第二パッド２４２は、ｘ方向において離間配置されている。また、ケース５００の外側の領域においては、配線層２４０は、レジスト層２６０によって覆われている。レジスト層２６０は、たとえば白色である。 The wiring layer 240 forms a conduction path to the first LED chip 310 and the second LED chip 320, and is made of a metal such as Cu, Ni, Pd, or Au. The wiring layer 240 is formed on the insulating layer 230. In the present embodiment, the wiring layer 240 is made of only Cu, for example. The wiring layer 240 has a first pad 241 and a second pad 242. The first pad 241 and the second pad 242 are spaced apart in the x direction. In the region outside the case 500, the wiring layer 240 is covered with a resist layer 260. The resist layer 260 is, for example, white.
　ケース５００は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を囲むように基板２００上に形成されており、たとえば白色樹脂からなる。ケース５００は、反射面５０１を有している。反射面５０１は、ｚ方向に対して傾斜しており、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０からｘ方向およびｙ方向に向かって発せられた光を反射することによりｚ方向上方に向かわせる機能を果たす。 The case 500 is formed on the substrate 200 so as to surround the first LED chip 310 and the second LED chip 320, and is made of, for example, white resin. The case 500 has a reflective surface 501. The reflecting surface 501 is inclined with respect to the z direction, and reflects light emitted from the first LED chip 310 and the second LED chip 320 in the x direction and the y direction to be directed upward in the z direction. Fulfills the function.
　図３２および図３３に示すように、ケース５００に囲まれた領域には、１つの第一ＬＥＤチップ３１０と１つの第二ＬＥＤチップ３２０が配置されている。 32 and 33, one first LED chip 310 and one second LED chip 320 are arranged in an area surrounded by the case 500.
　図３３および図３４に示すように、第一ＬＥＤチップ３１０は、下面電極３１１および上面電極３１２を有している。下面電極３１１は、基板２００の主面２１１と対向する方向であるｚ方向下方を向いており、たとえばＡｕメッキ層からなる。上面電極３１２は、下面電極３１１とは反対側であるｚ方向上方を向いており、たとえばＡｕメッキ層からなる。下面電極３１１は、本発明で言う第一下面電極に相当し、上面電極３１２は、本発明で言う第一上面電極に相当する。 33 and 34, the first LED chip 310 has a lower surface electrode 311 and an upper surface electrode 312. The lower surface electrode 311 faces downward in the z direction, which is the direction facing the main surface 211 of the substrate 200, and is made of, for example, an Au plating layer. The upper surface electrode 312 faces upward in the z direction opposite to the lower surface electrode 311 and is made of, for example, an Au plating layer. The lower surface electrode 311 corresponds to the first lower surface electrode referred to in the present invention, and the upper surface electrode 312 corresponds to the first upper surface electrode referred to in the present invention.
　第一ＬＥＤチップ３１０は、たとえば下面電極３１１の直上に位置するＳｉ基板と、このＳｉ基板と上面電極３１２との間に介在する半導体層とを有する。この半導体層は、たとえばＧａＡｓ系半導体からなる。また、下面電極３１１は、ｎ型電極として機能し、上面電極３１２は、ｐ型電極として機能する。このような構成により、第一ＬＥＤチップ３１０は、赤色光を主にｚ方向上方に向けて出射する。 The first LED chip 310 has, for example, a Si substrate positioned immediately above the lower surface electrode 311 and a semiconductor layer interposed between the Si substrate and the upper surface electrode 312. This semiconductor layer is made of, for example, a GaAs-based semiconductor. The lower surface electrode 311 functions as an n-type electrode, and the upper surface electrode 312 functions as a p-type electrode. With such a configuration, the first LED chip 310 emits red light mainly upward in the z direction.
　下面電極３１１は、金属接合層３４１を介して配線層２４０の第一パッド２４１に接合されている。金属接合層３４１は、たとえばＡｇペーストからなる。あるいは、下面電極３１１と第一パッド２４１とを共晶接合することによって、金属接合層３４１が形成されてもよい。上面電極３１２は、平面視において偏った位置に設けられており、本実施形態においては、第二ＬＥＤチップ３２０寄りに偏っている。 The lower surface electrode 311 is bonded to the first pad 241 of the wiring layer 240 via the metal bonding layer 341. The metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 311 and the first pad 241. The upper surface electrode 312 is provided at a position biased in plan view, and is biased toward the second LED chip 320 in the present embodiment.
　図３３および図３５に示すように、第二ＬＥＤチップ３２０は、下面電極３２１および上面電極３２２を有している。下面電極３２１は、基板２００の主面２１１と対向する方向であるｚ方向下方を向いており、たとえばＡｕメッキ層からなる。上面電極３２２は、下面電極３２１とは反対側であるｚ方向上方を向いており、たとえばＡｕメッキ層からなる。下面電極３２１は、本発明で言う第二下面電極に相当し、上面電極３２２は、本発明で言う第二上面電極に相当する。 As shown in FIGS. 33 and 35, the second LED chip 320 has a lower surface electrode 321 and an upper surface electrode 322. The lower surface electrode 321 faces downward in the z direction, which is the direction facing the main surface 211 of the substrate 200, and is made of, for example, an Au plating layer. The upper surface electrode 322 faces upward in the z direction opposite to the lower surface electrode 321 and is made of, for example, an Au plating layer. The lower surface electrode 321 corresponds to the second lower surface electrode referred to in the present invention, and the upper surface electrode 322 corresponds to the second upper surface electrode referred to in the present invention.
　第二ＬＥＤチップ３２０は、たとえば下面電極３２１の直上に位置するＳｉ基板と、このＳｉ基板と上面電極３２２との間に介在する半導体層とを有する。この半導体層は、たとえばＧａＮ系半導体からなる。また、下面電極３２１は、ｐ型電極として機能し、上面電極３２２は、ｎ型電極として機能する。このような構成により、第二ＬＥＤチップ３２０は、青色光を主にｚ方向上方に向けて出射する。 The second LED chip 320 has, for example, a Si substrate located immediately above the lower surface electrode 321 and a semiconductor layer interposed between the Si substrate and the upper surface electrode 322. This semiconductor layer is made of, for example, a GaN-based semiconductor. The lower surface electrode 321 functions as a p-type electrode, and the upper surface electrode 322 functions as an n-type electrode. With such a configuration, the second LED chip 320 emits blue light mainly upward in the z direction.
　下面電極３２１は、金属接合層３４１を介して配線層２４０の第二パッド２４２に接合されている。金属接合層３４１は、たとえばＡｇペーストからなる。あるいは、下面電極３２１と第二パッド２４２とを共晶接合することによって、金属接合層３４１が形成されてもよい。上面電極３２２は、平面視において偏った位置に設けられており、本実施形態においては、図３２に示すように第一ＬＥＤチップ３１０寄りに偏っている。 The lower surface electrode 321 is bonded to the second pad 242 of the wiring layer 240 through the metal bonding layer 341. The metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 321 and the second pad 242. The upper surface electrode 322 is provided at a position that is biased in plan view. In the present embodiment, the top electrode 322 is biased toward the first LED chip 310 as shown in FIG.
　ワイヤ３９１は、第一ＬＥＤチップ３１０の上面電極３１２と第二ＬＥＤチップ３２０の上面電極３２２とを接続しており、たとえばＡｕからなる。より具体的には、第二ＬＥＤチップ３２０の上面電極３２２には、ワイヤ３９１のファーストボンディング部が形成されている。一方、第一ＬＥＤチップ３１０の上面電極３１２には、予め形成されたＡｕバンプに対してワイヤ３９１のセカンドボンディング部が圧着されている。このような構成により、第一ＬＥＤチップ３１０と第二ＬＥＤチップ３２０とは、ワイヤ３９１を介して直列に接続されている。 The wire 391 connects the upper surface electrode 312 of the first LED chip 310 and the upper surface electrode 322 of the second LED chip 320, and is made of, for example, Au. More specifically, the first bonding portion of the wire 391 is formed on the upper surface electrode 322 of the second LED chip 320. On the other hand, the second bonding portion of the wire 391 is pressure-bonded to the upper surface electrode 312 of the first LED chip 310 against a previously formed Au bump. With such a configuration, the first LED chip 310 and the second LED chip 320 are connected in series via the wire 391.
　被覆樹脂４１０は、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０を除き、ケース５００によって囲まれた領域を覆っている。第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０それぞれの側面は、その大部分または全部が被覆樹脂４１０によって覆われている。被覆樹脂４１０の材質は特に限定されないが、本実施形態においては、たとえば酸化チタンが混入されたシリコーン樹脂などの白色樹脂からなる。 The coating resin 410 covers the area surrounded by the case 500 except for the first LED chip 310 and the second LED chip 320. Most or all of the side surfaces of the first LED chip 310 and the second LED chip 320 are covered with the coating resin 410. The material of the coating resin 410 is not particularly limited, but in the present embodiment, it is made of a white resin such as a silicone resin mixed with titanium oxide.
　被覆樹脂４１０は、その外端縁がケース５００の反射面５０１に接している。本実施形態においては、被覆樹脂４１０とケース５００との接合部分のうち主面２１１からｚ方向上方に最も離間した部位は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０のいずれの部位よりも主面２１１からｚ方向上方に離間している。被覆樹脂４１０は、反射面４１１を有している。反射面４１１は、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０の上面付近からケース５００の反射面５０１に向かうほどｚ方向において基材２１０から遠ざかるようになだらかに傾斜している。 The outer edge of the coating resin 410 is in contact with the reflection surface 501 of the case 500. In the present embodiment, the portion of the joint portion between the coating resin 410 and the case 500 that is farthest from the main surface 211 in the z-direction upward is the main portion of any portion of the first LED chip 310 and the second LED chip 320. The surface 211 is spaced upward in the z direction. The coating resin 410 has a reflective surface 411. The reflective surface 411 is gently inclined so as to move away from the base material 210 in the z direction from the vicinity of the upper surfaces of the first LED chip 310 and the second LED chip 320 toward the reflective surface 501 of the case 500.
　封止樹脂４２０は、ケース５００によって囲まれた領域において、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を覆っている。封止樹脂４２０は、たとえば透明なエポキシ樹脂またはシリコーン樹脂などに蛍光材料が混入された材質からなる。この蛍光材料は、たとえば第二ＬＥＤチップ３２０からの青色光によって励起されることにより、緑色光を発する。 The sealing resin 420 covers the first LED chip 310 and the second LED chip 320 in the region surrounded by the case 500. The sealing resin 420 is made of a material in which a fluorescent material is mixed in, for example, a transparent epoxy resin or silicone resin. This fluorescent material emits green light when excited by blue light from the second LED chip 320, for example.
　本実施形態においては、封止樹脂４２０に含まれる上記蛍光材料は、硫化物系の蛍光材料である。硫化物系の蛍光材料は、カルシウムサルファイド（ＣａＳ）、ジンクサルファイド（ＺｎＳ）、ストロンチウムサルファイド（ＳｒＳ）、ストロンチウムチオガレート（ＳｒＧａ２Ｓ４）、および、カルシウムチオガレート（ＣａＧａ２Ｓ４）からなる群より選択される１以上の硫化物を含む。蛍光体を構成する硫化物系の蛍光材料は、Ｅｕ、Ｔｂ、Ｓｍ、Ｐｒ、Ｄｙ、およびＴｍのうちの少なくとも一元素がドーピングされた材料である。 In the present embodiment, the fluorescent material contained in the sealing resin 420 is a sulfide-based fluorescent material. The sulfide-based fluorescent material is one or more selected from the group consisting of calcium sulfide (CaS), zinc sulfide (ZnS), strontium sulfide (SrS), strontium thiogallate (SrGa2S4), and calcium thiogallate (CaGa2S4). Of sulfides. The sulfide-based fluorescent material constituting the phosphor is a material doped with at least one element of Eu, Tb, Sm, Pr, Dy, and Tm.
　赤色光を発する蛍光材料の場合、発せられる光の波長のピークは、６２５－７４０ｎｍである。赤色光を発する蛍光材料は、たとえば、ユーロピウムがドーピングされたカルシウムサルファイド（ＣａＳ：Ｅｕ）、ユーロピウムがドーピングされたジンクサルファイド（ＺｎＳ：Ｅｕ）、および、ユーロピウムがドーピングされたストロンチウムサルファイド（ＳｒＳ：Ｅｕ）のいずれかよりなる。緑色光を発する蛍光材料の場合、発せられる光の波長のピークは、５００－５６５ｎｍである。緑色光を発する蛍光材料は、たとえば、ユーロピウムがドーピングされたストロンチウムチオガレート（ＳｒＧａ2Ｓ4：Ｅｕ）、または、ユーロピウムがドーピングされたカルシウムチオガレート（ＣａＧａ2Ｓ4：Ｅｕ）よりなる。赤色を発する蛍光材料や緑色光を発する蛍光材料にドーピングされる元素は、Ｅｕに限定されず、Ｔｂ、Ｓｍ、Ｐｒ、Ｄｙ、およびＴｍのいずれかであってもよい。 In the case of a fluorescent material that emits red light, the peak of the wavelength of the emitted light is 625 to 740 nm. Examples of fluorescent materials that emit red light include calcium sulfide doped with europium (CaS: Eu), zinc sulfide doped with europium (ZnS: Eu), and strontium sulfide doped with europium (SrS: Eu). Consisting of either. In the case of a fluorescent material that emits green light, the peak of the wavelength of the emitted light is 500-565 nm. The fluorescent material that emits green light is made of, for example, strontium thiogallate doped with europium (SrGa 2 S 4 : Eu) or calcium thiogallate doped with europium (CaGa 2 S 4 : Eu). The element doped in the fluorescent material emitting red light or the fluorescent material emitting green light is not limited to Eu, and may be any of Tb, Sm, Pr, Dy, and Tm.
　次に、ＬＥＤ光源モジュール１１１の作用について説明する。 Next, the operation of the LED light source module 111 will be described.
　本実施形態によれば、図３３～図３５に示すように、ワイヤ３９１によって第一ＬＥＤチップ３１０の上面電極３１２と第二ＬＥＤチップ３２０の上面電極３２２とが互いに接続されている。このため、第一ＬＥＤチップ３１０の上面電極３１２および第二ＬＥＤチップ３２０の上面電極３２２から配線層２４０へと延びるワイヤは設ける必要がない。これにより、配線層２４０へとワイヤをボンディングする工程が不要であり、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０の周囲に、ボンディングのためのキャピラリなどを進入させるスペースを設けずに済む。したがって、ＬＥＤ光源モジュール１１１の小型化を図ることができる。 According to the present embodiment, as shown in FIGS. 33 to 35, the upper electrode 312 of the first LED chip 310 and the upper electrode 322 of the second LED chip 320 are connected to each other by the wire 391. For this reason, it is not necessary to provide wires extending from the upper surface electrode 312 of the first LED chip 310 and the upper surface electrode 322 of the second LED chip 320 to the wiring layer 240. Thereby, the step of bonding wires to the wiring layer 240 is not necessary, and there is no need to provide a space for entering a bonding capillary or the like around the first LED chip 310 and the second LED chip 320. Therefore, the LED light source module 111 can be reduced in size.
　配線層２４０にワイヤをボンディングしないため、配線層２４０の構造をワイヤボンディングに適した構造とする必要がない。このため、ワイヤボンディングに適した構造である表層を覆うＡｕメッキなどを設けずにすむ。これは、製造工程の簡略化とともにコスト低減に有利である。 Since no wire is bonded to the wiring layer 240, the structure of the wiring layer 240 does not need to be a structure suitable for wire bonding. For this reason, it is not necessary to provide Au plating that covers the surface layer, which is a structure suitable for wire bonding. This is advantageous for simplification of the manufacturing process and cost reduction.
　また、被覆樹脂４１０により配線層２４０が覆われているため、被覆樹脂４１０が保護膜として機能する。これにより、たとえば硫化ガスなどが配線層２４０と反応するのを抑制できる。特に封止樹脂４２０が硫化物系の蛍光材料を含むため、封止樹脂４２０から生じた硫化ガスによって配線層２４０が劣化することを防止することができる。また、被覆樹脂４１０を白色とすることによって、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０の光を上方に反射することにより、ＬＥＤ光源モジュール１１１の輝度を向上することができる。さらに、硫化物系の蛍光材料を含む封止樹脂４２０を採用することにより、より鮮やかな白色光を発することができるという利点がある。 Further, since the wiring layer 240 is covered with the coating resin 410, the coating resin 410 functions as a protective film. Thereby, for example, it is possible to suppress the sulfur gas or the like from reacting with the wiring layer 240. In particular, since the sealing resin 420 includes a sulfide-based fluorescent material, it is possible to prevent the wiring layer 240 from being deteriorated by the sulfide gas generated from the sealing resin 420. Moreover, the brightness | luminance of the LED light source module 111 can be improved by reflecting the light of the 1st LED chip 310 and the 2nd LED chip 320 upwards by making the coating resin 410 white. Furthermore, there is an advantage that brighter white light can be emitted by employing the sealing resin 420 containing a sulfide-based fluorescent material.
　被覆樹脂４１０がケース５００の反射面５０１の上端付近まで到達していることにより、第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０からの光は、ケース５００には到達しにくい構成となっている。比較的高強度とすることが求められるケース５００の材質は、たとえばそれほど強度が求められない被覆樹脂４１０の材質と比べて、光を受けることによって劣化しやすい。この劣化を、被覆樹脂４１０によって抑制することができる。 Since the coating resin 410 reaches the vicinity of the upper end of the reflection surface 501 of the case 500, the light from the first LED chip 310 and the second LED chip 320 is difficult to reach the case 500. The material of the case 500 that is required to have a relatively high strength is likely to be deteriorated by receiving light as compared with the material of the coating resin 410 that is not required to have a high strength. This deterioration can be suppressed by the coating resin 410.
　図３６～図４９は、本発明の他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 36 to 49 show other embodiments of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
　図３６～図３８は、本発明の第十二実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１２は、ケース５００に囲まれた領域に第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０および第三ＬＥＤチップ３３０とワイヤ３９１，３９２が配置されている。第一ＬＥＤチップ３１０は、上述したＬＥＤ光源モジュール１１１と同様の構成である。 36 to 38 show an LED light source module according to the twelfth embodiment of the present invention. In the LED light source module 112 of the present embodiment, a first LED chip 310, a second LED chip 320, a third LED chip 330, and wires 391 and 392 are arranged in a region surrounded by the case 500. The first LED chip 310 has the same configuration as the LED light source module 111 described above.
　本実施形態の第二ＬＥＤチップ３２０は、図３７に示すように上面電極３２２および上面電極３２９を有している。上面電極３２９は、本発明で言う追加の第二上面電極に相当し、たとえばＡｕメッキ層によって形成されている。上面電極３２２は、ｎ型電極として機能し、上面電極３２９は、ｐ型電極として機能する。 The second LED chip 320 of the present embodiment has an upper surface electrode 322 and an upper surface electrode 329 as shown in FIG. The upper surface electrode 329 corresponds to the additional second upper surface electrode referred to in the present invention, and is formed of, for example, an Au plating layer. The upper surface electrode 322 functions as an n-type electrode, and the upper surface electrode 329 functions as a p-type electrode.
　また、本実施形態においては、基板２００と第二ＬＥＤチップ３２０との間にサブマウント基板３０１が設けられている。サブマウント基板３０１は、たとえばＳｉからなり、その厚さがたとえば３００μｍ程度である。本実施形態においては、第二ＬＥＤチップ３２０は、サブマウント基板３０１を介して基材２１０の主面２１１に間接的に支持されている。サブマウント基板３０１と配線層２４０の第二パッド２４２とは、金属接合層３４１を介して接合されている。本実施形態においては、金属接合層３４１は、たとえばＡｇからなる。また、第二ＬＥＤチップ３２０とサブマウント基板３０１とは、たとえばＳｉあるいはエポキシ樹脂からなる接合層３４２を介して接合されている。 In this embodiment, a submount substrate 301 is provided between the substrate 200 and the second LED chip 320. The submount substrate 301 is made of, for example, Si and has a thickness of, for example, about 300 μm. In the present embodiment, the second LED chip 320 is indirectly supported on the main surface 211 of the base 210 via the submount substrate 301. The submount substrate 301 and the second pad 242 of the wiring layer 240 are bonded via a metal bonding layer 341. In the present embodiment, the metal bonding layer 341 is made of, for example, Ag. The second LED chip 320 and the submount substrate 301 are bonded via a bonding layer 342 made of, for example, Si or epoxy resin.
　図３６および図３８に示すように、第三ＬＥＤチップ３３０は、下面電極３３１および上面電極３３２を有している。下面電極３３１は、基板２００の主面２１１と対向する方向であるｚ方向下方を向いており、たとえばＡｕメッキ層からなる。上面電極３３２は、下面電極３３１とは反対側であるｚ方向上方を向いており、たとえばＡｕメッキ層からなる。下面電極３３１は、本発明で言う第三下面電極に相当し、上面電極３３２は、本発明で言う第三上面電極に相当する。 As shown in FIGS. 36 and 38, the third LED chip 330 has a lower surface electrode 331 and an upper surface electrode 332. The lower surface electrode 331 faces downward in the z direction, which is the direction facing the main surface 211 of the substrate 200, and is made of, for example, an Au plating layer. The upper surface electrode 332 faces upward in the z direction, which is opposite to the lower surface electrode 331, and is made of, for example, an Au plating layer. The lower electrode 331 corresponds to the third lower electrode referred to in the present invention, and the upper electrode 332 corresponds to the third upper electrode referred to in the present invention.
　第三ＬＥＤチップ３３０は、たとえば下面電極３３１の直上に位置するＳｉ基板と、このＳｉ基板と上面電極３３２との間に介在する半導体層とを有する。この半導体層は、たとえばＧａＡｓ系半導体からなる。また、下面電極３３１は、ｐ型電極として機能し、上面電極３３２は、ｎ型電極として機能する。このような構成により、第三ＬＥＤチップ３３０は、赤色光を主にｚ方向上方に向けて出射する。 The third LED chip 330 has, for example, a Si substrate positioned immediately above the lower surface electrode 331 and a semiconductor layer interposed between the Si substrate and the upper surface electrode 332. This semiconductor layer is made of, for example, a GaAs-based semiconductor. The lower surface electrode 331 functions as a p-type electrode, and the upper surface electrode 332 functions as an n-type electrode. With such a configuration, the third LED chip 330 emits red light mainly upward in the z direction.
　下面電極３３１は、金属接合層３４１を介して配線層２４０の第三パッド２４３に接合されている。金属接合層３４１は、たとえばＡｇペーストからなる。あるいは、下面電極３３１と第三パッド２４３とを共晶接合することによって、金属接合層３４１が形成されてもよい。上面電極３３２は、平面視において偏った位置に設けられており、本実施形態においては、第二ＬＥＤチップ３２０寄りに偏っている。 The lower surface electrode 331 is bonded to the third pad 243 of the wiring layer 240 through the metal bonding layer 341. The metal bonding layer 341 is made of, for example, an Ag paste. Alternatively, the metal bonding layer 341 may be formed by eutectic bonding of the lower surface electrode 331 and the third pad 243. The upper surface electrode 332 is provided at a position that is biased in plan view, and is biased toward the second LED chip 320 in the present embodiment.
　本実施形態においては、ワイヤ３９１は、第一ＬＥＤチップ３１０の上面電極３１２と第二ＬＥＤチップ３２０の上面電極３２２とを接続している。また、ワイヤ３９２は、本発明で言う追加のワイヤに相当し、第二ＬＥＤチップ３２０の上面電極３２９と第三ＬＥＤチップ３３０の上面電極３３２とを接続している。 In this embodiment, the wire 391 connects the upper surface electrode 312 of the first LED chip 310 and the upper surface electrode 322 of the second LED chip 320. The wire 392 corresponds to an additional wire in the present invention, and connects the upper surface electrode 329 of the second LED chip 320 and the upper surface electrode 332 of the third LED chip 330.
　配線層２４０は、第一パッド２４１、第二パッド２４２および第三パッド２４３を有している。このうち第一パッド２４１および第三パッド２４３は、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０および第三ＬＥＤチップ３３０を点灯させるための電力供給経路の一部をなす。一方、第二パッド２４２は、電力供給経路をなしておらず、第二ＬＥＤチップ３２０が搭載されたサブマウント基板３０１を接合するための便宜として形成されている。 The wiring layer 240 has a first pad 241, a second pad 242, and a third pad 243. Among these, the first pad 241 and the third pad 243 form part of a power supply path for lighting the first LED chip 310, the second LED chip 320, and the third LED chip 330. On the other hand, the second pad 242 does not form a power supply path, and is formed as a convenience for joining the submount substrate 301 on which the second LED chip 320 is mounted.
　被覆樹脂４１０は、ケース５００に囲まれた領域のうち、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０および第三ＬＥＤチップ３３０を除く部位を覆っている。また、被覆樹脂４１０は、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０および第三ＬＥＤチップ３３０それぞれの側面のすべてまたは大部分を覆っている。 The covering resin 410 covers a portion excluding the first LED chip 310, the second LED chip 320, and the third LED chip 330 in the region surrounded by the case 500. The coating resin 410 covers all or most of the side surfaces of the first LED chip 310, the second LED chip 320, and the third LED chip 330.
　このような実施形態によっても、ＬＥＤ光源モジュール１１２の小型化を図ることができる。青色光を発する第二ＬＥＤチップ３２０を挟んで赤色光を発する第一ＬＥＤチップ３１０と第三ＬＥＤチップ３３０とを配置することにより、赤色光の光量が相対的に不足することを回避できる。また、３つの第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０および第三ＬＥＤチップ３３０が１つのケース５００に囲まれた領域に配置されているにもかかわらず、ワイヤ３９１，３９２のいずれもが配線層２４０にはボンディングされていない。これは、多数のＬＥＤチップを備えることによって高輝度化を図りつつ、小型化を図ることができることを意味する。 Also in this embodiment, the LED light source module 112 can be reduced in size. By arranging the first LED chip 310 that emits red light and the third LED chip 330 with the second LED chip 320 that emits blue light in between, it is possible to avoid a relative shortage of the amount of red light. In addition, although the three first LED chips 310, the second LED chip 320, and the third LED chip 330 are arranged in a region surrounded by one case 500, all of the wires 391 and 392 are wired. Layer 240 is not bonded. This means that by providing a large number of LED chips, it is possible to reduce the size while increasing the luminance.
　図３９および図４０は、本発明の第十三実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１３においては、基材２１０には、隆起部２１２および陥没部２１６が形成されている。 39 and 40 show an LED light source module according to the thirteenth embodiment of the present invention. In the LED light source module 113 of the present embodiment, the base member 210 is formed with a raised portion 212 and a depressed portion 216.
　隆起部２１２は、主面２１１よりもｚ方向上方に隆起した部位であり、本実施形態においては、頂面２１３および傾斜面２１４を有する。頂面２１３は、隆起部２１２のうちｚ方向上方にもっとも突出した部位の表面であり、主面２１１と平行である。本実施形態においては、頂面２１３は、矩形状である。傾斜面２１４は、主面２１１と頂面２１３とに繋がっており、ｘｙ平面に対して傾斜している。隆起部２１２の主面２１１からの隆起高さは、たとえば１５０～２００μｍである。 The raised portion 212 is a portion raised above the main surface 211 in the z direction, and has a top surface 213 and an inclined surface 214 in the present embodiment. The top surface 213 is the surface of the protruding portion 212 that protrudes most upward in the z direction, and is parallel to the main surface 211. In the present embodiment, the top surface 213 has a rectangular shape. The inclined surface 214 is connected to the main surface 211 and the top surface 213, and is inclined with respect to the xy plane. The height of the raised portion 212 from the main surface 211 is, for example, 150 to 200 μm.
　陥没部２１６は、裏面２１５よりもｚ方向上方に凹んだ部位であり、ｚ方向視において隆起部２１２と重なっている。本実施形態においては、陥没部２１６は、底面２１７を有している。底面２１７は、裏面２１５と平行であり、本実施形態においては、矩形状である。ｚ方向視において、底面２１７は、隆起部２１２に内包されている。また底面２１７と頂面２１３とは、ｚ方向視においてそれぞれの外縁が互いにほとんど重なっているか、底面２１７の外縁が頂面２１３の外縁に対して若干内側に位置している。陥没部２１６の裏面２１５からの陥没深さは、たとえば１５０～２００μｍである。 The depressed portion 216 is a portion that is recessed above the back surface 215 in the z direction, and overlaps the raised portion 212 when viewed in the z direction. In the present embodiment, the depressed portion 216 has a bottom surface 217. The bottom surface 217 is parallel to the back surface 215 and has a rectangular shape in the present embodiment. When viewed in the z direction, the bottom surface 217 is included in the raised portion 212. Further, the bottom surface 217 and the top surface 213 have their outer edges almost overlapping each other when viewed in the z direction, or the outer edge of the bottom surface 217 is located slightly inside the outer edge of the top surface 213. The depression depth from the back surface 215 of the depression 216 is, for example, 150 to 200 μm.
　メッキ層２２０は、隆起部２１２の頂面２１３を覆っており、Ｃｕ，Ｎｉ，Ｐｄ，Ａｕなどの金属からなる。本実施形態においては、メッキ層２２０は、Ｃｕからなる。メッキ層２２０には、サブマウント基板３０１が接合されている。 The plated layer 220 covers the top surface 213 of the raised portion 212 and is made of a metal such as Cu, Ni, Pd, or Au. In the present embodiment, the plating layer 220 is made of Cu. A submount substrate 301 is bonded to the plating layer 220.
　配線層２４０は、下地層２５１およびメッキ層２５２が積層された構成とされている。下地層２５１は、上述したＬＥＤ光源モジュール１１１，１１２における配線層２４０を構成していた層と同様のものである。メッキ層２５２は、下地層２５１上に積層されており、メッキ層２２０と同一の材質によって構成されている。 The wiring layer 240 has a structure in which a base layer 251 and a plating layer 252 are laminated. The underlayer 251 is the same as the layer that has formed the wiring layer 240 in the LED light source modules 111 and 112 described above. The plating layer 252 is laminated on the base layer 251 and is made of the same material as the plating layer 220.
　絶縁層２３０は、基材２１０の主面２１１を覆っており、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０には、開口２３１が形成されている。開口２３１は、隆起部２１２の少なくとも一部を露出させるために設けられており、本実施形態においては、隆起部２１２の頂面２１３を露出させている。一方、隆起部２１２の傾斜面２１４は、絶縁層２３０によって覆われている。絶縁層２３０の厚さは、たとえば１００μｍ程度である。 The insulating layer 230 covers the main surface 211 of the substrate 210 and is made of an insulating material such as an insulating resin or SiO 2 . An opening 231 is formed in the insulating layer 230. The opening 231 is provided to expose at least a part of the raised portion 212, and in the present embodiment, the top surface 213 of the raised portion 212 is exposed. On the other hand, the inclined surface 214 of the raised portion 212 is covered with the insulating layer 230. The thickness of the insulating layer 230 is, for example, about 100 μm.
　次に、ＬＥＤ光源モジュール１１３の製造方法の一例について、図４１～図４５を参照しつつ以下に説明する。 Next, an example of a manufacturing method of the LED light source module 113 will be described below with reference to FIGS.
　まず、図４１に示すように金属板２１０’を用意する。金属板２１０’は、たとえばＡｌ、Ｃｕ、Ｆｅなどからなる。本実施形態においては、金属板２１０’の材質としてＡｌが選択されており、金属板２１０’の厚さはたとえば１．０～１．５ｍｍ程度である。金属板２１０’は、ｚ方向において互いに反対方向を向く主面２１１’および裏面２１５’を有する。次いで、主面２１１’を覆うように絶縁層２３０’を形成する。絶縁層２３０’は、絶縁性樹脂あるいはＳｉＯ2などの絶縁材料からなる。絶縁層２３０’の厚さは、たとえば１００μｍ程度である。次いで、絶縁層２３０’を覆うように下地層２５１’を形成する。下地層２５１’の形成は、たとえば絶縁層２３０’上に無電解メッキによってＣｕメッキ層を形成することによりなされる。 First, as shown in FIG. 41, a metal plate 210 ′ is prepared. The metal plate 210 ′ is made of, for example, Al, Cu, Fe or the like. In the present embodiment, Al is selected as the material of the metal plate 210 ′, and the thickness of the metal plate 210 ′ is, for example, about 1.0 to 1.5 mm. The metal plate 210 ′ has a main surface 211 ′ and a back surface 215 ′ that face in opposite directions in the z direction. Next, an insulating layer 230 ′ is formed so as to cover the main surface 211 ′. The insulating layer 230 ′ is made of an insulating resin or an insulating material such as SiO 2 . The thickness of the insulating layer 230 ′ is, for example, about 100 μm. Next, a base layer 251 ′ is formed so as to cover the insulating layer 230 ′. The underlayer 251 ′ is formed, for example, by forming a Cu plating layer on the insulating layer 230 ′ by electroless plating.
　次いで、下地層２５１’にたとえばエッチングを用いたパターニングを施すことにより、図４２に示すように下地層２５１を形成する。次いで、図４３に示すように、金型６１０，６２０を用いて金属板２１０’を加工する。金型６１０は、上面が矩形状である。金型６２０は、矩形状の凹部６２１を有している。凹部６２１は、ｚ方向視において金型６１０の上面よりも若干大となっている。金属板２１０’の裏面２１５’側に金型６１０を配置し、金属板２１０’の主面２１１’側に金型６２０を配置する。そして、金型６１０と金型６２０とを接近させることにより、金属板２１０’に金型６１０の上面を嵌入させる。これにより、隆起部２１２と陥没部２１６とを有する基材２１０が得られる。金型６１０の上面が接していた部位が陥没部２１６の底面２１７となる。また、金型６１０に対応して金型６２０の凹部６２１に進入した部位の表面が頂面２１３となる。この際、本実施形態においては、下地層２５１は、金型６２０のうち凹部６２１を避けた位置と当接しており、変形されない。絶縁層２３０’は、隆起部２１２に沿った形状に変形される。 Next, the base layer 251 'is patterned by using, for example, etching to form the base layer 251 as shown in FIG. Next, as shown in FIG. 43, the metal plate 210 ′ is processed using the molds 610 and 620. The mold 610 has a rectangular top surface. The mold 620 has a rectangular recess 621. The recess 621 is slightly larger than the upper surface of the mold 610 when viewed in the z direction. A metal mold 610 is disposed on the back surface 215 ′ side of the metal plate 210 ′, and a metal mold 620 is disposed on the main surface 211 ′ side of the metal plate 210 ′. Then, the upper surface of the mold 610 is fitted into the metal plate 210 ′ by bringing the mold 610 and the mold 620 closer to each other. Thereby, the base material 210 which has the protruding part 212 and the depression part 216 is obtained. A portion where the upper surface of the mold 610 is in contact becomes a bottom surface 217 of the depressed portion 216. Further, the surface of the portion that has entered the recess 621 of the mold 620 corresponding to the mold 610 becomes the top surface 213. At this time, in this embodiment, the base layer 251 is in contact with a position where the concave portion 621 is avoided in the mold 620 and is not deformed. The insulating layer 230 ′ is deformed into a shape along the raised portion 212.
　次いで、絶縁層２３０’の一部を除去することにより、図４４に示すように絶縁層２３０を形成する。絶縁層２３０’の一部を除去する処理は、たとえばスキージ６３０を用いてなされる。スキージ６３０の下端縁は、ｙ方向に平行に長く延びている。このスキージ６３０の下端縁をｚ方向において頂面２１３と同じか、若干下方に位置させた状態で、スキージ６３０をｘ方向に移動させる。これにより、絶縁層２３０’のうち頂面２１３よりもｚ方向上方に位置する部分がスキージ６３０によって除去される。この結果、頂面２１３のみを露出させる開口２３１を有する絶縁層２３０が形成される。本実施形態においては、下地層２５１は、頂面２１３よりも十分にｚ方向下方に位置するため、スキージ６３０には接触しない。 Next, by removing a part of the insulating layer 230 ', the insulating layer 230 is formed as shown in FIG. The process of removing a part of the insulating layer 230 ′ is performed using, for example, a squeegee 630. The lower end edge of the squeegee 630 extends long in parallel to the y direction. The squeegee 630 is moved in the x direction while the lower edge of the squeegee 630 is located at the same level as or slightly below the top surface 213 in the z direction. As a result, the portion of the insulating layer 230 ′ located above the top surface 213 in the z direction is removed by the squeegee 630. As a result, the insulating layer 230 having the opening 231 exposing only the top surface 213 is formed. In the present embodiment, the base layer 251 is located sufficiently below the top surface 213 in the z direction, and thus does not contact the squeegee 630.
　次いで、図４５に示すように、メッキ層２２０およびメッキ層２５２を形成する。メッキ層２２０およびメッキ層２５２は、たとえば電解メッキによって形成される。このため、導電体である基材２１０の頂面２１３および下地層２５１を覆うようにメッキ層２２０および下地層２５１が形成され、絶縁層２３０上には形成されない。以上の工程を経ることにより、基材２１０、メッキ層２２０、絶縁層２３０および配線層２４０からなる基板２００が得られる。 Next, as shown in FIG. 45, a plating layer 220 and a plating layer 252 are formed. The plated layer 220 and the plated layer 252 are formed by, for example, electrolytic plating. For this reason, the plating layer 220 and the base layer 251 are formed so as to cover the top surface 213 and the base layer 251 of the base material 210 which is a conductor, and are not formed on the insulating layer 230. Through the above steps, the substrate 200 including the base 210, the plating layer 220, the insulating layer 230, and the wiring layer 240 is obtained.
　この後は、ケース５００の形成、第一ＬＥＤチップ３１０、第二ＬＥＤチップ３２０、サブマウント基板３０１および第三ＬＥＤチップ３３０の搭載、ワイヤ３９１，３９２のボンディングおよび封止樹脂４２０の形成を経ることにより、ＬＥＤ光源モジュール１１３が得られる。 Thereafter, the case 500 is formed, the first LED chip 310, the second LED chip 320, the submount substrate 301 and the third LED chip 330 are mounted, the wires 391 and 392 are bonded, and the sealing resin 420 is formed. Thus, the LED light source module 113 is obtained.
　このような実施形態によっても、ＬＥＤ光源モジュール１１３の小型化を図ることができる。また、第二ＬＥＤチップ３２０は、絶縁層２３０を介することなく隆起部２１２に支持されている。これにより、第二ＬＥＤチップ３２０からの伝熱が絶縁層２３０によって妨げられることがない。したがって、第二ＬＥＤチップ３２０からの放熱を促進することが可能であり、ＬＥＤ光源モジュール１１３の高輝度化を図ることができる。 Also in this embodiment, the LED light source module 113 can be downsized. The second LED chip 320 is supported by the raised portion 212 without the insulating layer 230 interposed therebetween. Thereby, the heat transfer from the second LED chip 320 is not hindered by the insulating layer 230. Therefore, heat radiation from the second LED chip 320 can be promoted, and the brightness of the LED light source module 113 can be increased.
　図４６は、本発明の第十四実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１４においては、上述したＬＥＤ光源モジュール１１３と比べて、メッキ層２２０を備えておらず、配線層２４０が単層とされている点が異なっている。すなわち、本実施形態においては、図４５を用いて説明したメッキ工程が省略されている。このような実施形態によっても、ＬＥＤ光源モジュール１１４の小型化を図ることができる。 FIG. 46 shows an LED light source module according to the fourteenth embodiment of the present invention. The LED light source module 114 of this embodiment is different from the LED light source module 113 described above in that the plating layer 220 is not provided and the wiring layer 240 is a single layer. That is, in the present embodiment, the plating process described with reference to FIG. 45 is omitted. Also according to such an embodiment, the LED light source module 114 can be downsized.
　図４７は、本発明の第十五実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１５は、上述したＬＥＤ光源モジュール１１３と比べてサブマウント基板３０１を備えていない点が異なっている。すなわち、第二ＬＥＤチップ３２０が、基材２１０の隆起部２１２の頂面２１３を覆う絶縁層２３０に接合されている。本実施形態においては、隆起部２１２の高さは、第一ＬＥＤチップ３１０および第三ＬＥＤチップ３３０の高さと略同一とされている。このような実施形態によっても、ＬＥＤ光源モジュール１１５の小型化を図ることができる。 FIG. 47 shows an LED light source module according to the fifteenth embodiment of the present invention. The LED light source module 115 of this embodiment is different from the LED light source module 113 described above in that it does not include the submount substrate 301. That is, the second LED chip 320 is bonded to the insulating layer 230 that covers the top surface 213 of the raised portion 212 of the substrate 210. In the present embodiment, the height of the raised portion 212 is substantially the same as the height of the first LED chip 310 and the third LED chip 330. Also according to such an embodiment, the LED light source module 115 can be downsized.
　図４８は、本発明の第十六実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１６は、第一ＬＥＤチップ３１０が赤色光を発し、第二ＬＥＤチップ３２０が青色光を発し、第三ＬＥＤチップ３３０が緑色光を発する。第三ＬＥＤチップ３３０は、たとえばＧａＮ系半導体からなる半導体層を有する。また、本実施形態においては、封止樹脂４２０は、透明な樹脂からなり、蛍光材料は混入されていない。このような実施形態によっても、ＬＥＤ光源モジュール１１６の小型化を図ることができる。また、第一ＬＥＤチップ３１０からの赤色光、第二ＬＥＤチップ３２０からの青色光および第三ＬＥＤチップ３３０から緑色光によって、白色光を生成することができる。このため、封止樹脂４２０には、蛍光材料を混入する必要がない。本実施形態においては、高輝度化等の目的により被覆樹脂４１０を設けているが、封止樹脂４２０に起因する硫化ガスによる劣化のおそれがないため、この点において、被覆樹脂４１０を省略した構成としてもよい。 FIG. 48 shows an LED light source module according to the sixteenth embodiment of the present invention. In the LED light source module 116 of the present embodiment, the first LED chip 310 emits red light, the second LED chip 320 emits blue light, and the third LED chip 330 emits green light. The third LED chip 330 has a semiconductor layer made of, for example, a GaN-based semiconductor. In this embodiment, the sealing resin 420 is made of a transparent resin, and no fluorescent material is mixed therein. Also according to such an embodiment, the LED light source module 116 can be downsized. Further, white light can be generated by red light from the first LED chip 310, blue light from the second LED chip 320, and green light from the third LED chip 330. For this reason, it is not necessary to mix the fluorescent material into the sealing resin 420. In the present embodiment, the coating resin 410 is provided for the purpose of increasing the brightness. However, since there is no risk of deterioration due to the sulfide gas caused by the sealing resin 420, the configuration in which the coating resin 410 is omitted in this respect. It is good.
　図４９は、本発明の第十七実施形態に基づくＬＥＤ光源モジュールを示している。本実施形態のＬＥＤ光源モジュール１１７は、比較的小型のモジュールとして構成されることにより、電子機器の点光源として用いられるものである。この点において、上述したＬＥＤ光源モジュール１１１～１１６が、ｘ方向に長く延びるバー状光源として構成されている点と異なる。ＬＥＤ光源モジュール１１７が第一ＬＥＤチップ３１０および第二ＬＥＤチップ３２０を備える点は、上述したＬＥＤ光源モジュール１１１と類似しているが、ＬＥＤ光源モジュール１１７のような点光源として用いられる構成に、上述したＬＥＤ光源モジュール１１２～１１６における構成を適宜適用しても良いことはもちろんである。 FIG. 49 shows an LED light source module according to the seventeenth embodiment of the present invention. The LED light source module 117 of this embodiment is used as a point light source of an electronic device by being configured as a relatively small module. In this respect, the LED light source modules 111 to 116 described above are different from those configured as bar-shaped light sources extending in the x direction. The point that the LED light source module 117 includes the first LED chip 310 and the second LED chip 320 is similar to the LED light source module 111 described above, but the configuration used as a point light source such as the LED light source module 117 is the above. Of course, the configurations of the LED light source modules 112 to 116 may be applied as appropriate.
　本実施形態においては、２つのリード２７０およびリード２８０によって本発明で言う導通支持部材が構成されている。リード２７０およびリード２８０は、金属からなり、たとえば母材としてのＣｕ板にＮｉやＡｕなどのメッキが施されている。 In the present embodiment, the conduction support member referred to in the present invention is constituted by the two leads 270 and the leads 280. The lead 270 and the lead 280 are made of metal, for example, a Cu plate as a base material is plated with Ni, Au, or the like.
　リード２７０は、主面２７１および端子部２７５を有している。主面２７１は、ｚ方向上方を向いており第一ＬＥＤチップ３１０を支持している。端子部２７５は、ＬＥＤ光源モジュール１１７を図示しない回路基板などに実装するために用いられる。 The lead 270 has a main surface 271 and a terminal portion 275. The main surface 271 faces upward in the z direction and supports the first LED chip 310. The terminal portion 275 is used for mounting the LED light source module 117 on a circuit board (not shown).
　リード２８０は、主面２８１および端子部２８５を有している。主面２８１は、ｚ方向上方を向いており第二ＬＥＤチップ３２０を支持している。端子部２８５は、ＬＥＤ光源モジュール１０７を図示しない回路基板などに実装するために用いられる。このような実施形態によっても、ＬＥＤ光源モジュール１１７の小型化を図ることができる。 The lead 280 has a main surface 281 and a terminal portion 285. The main surface 281 faces upward in the z direction and supports the second LED chip 320. The terminal portion 285 is used for mounting the LED light source module 107 on a circuit board (not shown). Also according to such an embodiment, the LED light source module 117 can be downsized.
　本発明に係るＬＥＤ光源モジュールは、上述した実施形態に限定されるものではない。本発明に係るＬＥＤ光源モジュールの各部の具体的な構成は、種々に設計変更自在である。 The LED light source module according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the LED light source module according to the present invention can be varied in design in various ways.
　本発明に係るＬＥＤ光源モジュールは、比較的小型のモジュールとして構成されることにより、電子機器の点光源として用いられるもの、細長い導通支持部材に複数のＬＥＤチップが配置されることにより細長いバー状光源として用いられるもの、導通支持部材に複数のＬＥＤチップがマトリクス状に配置されることにより、面状光源として用いられるもの、などがある。上記バー状光源の具体的な用途の一例としては、平板状の導光板の側面に正対する位置にＬＥＤ光源モジュールが配置されることにより、この導光板から面状光を出射する構成が挙げられる。この導光板に重ねられた液晶パネルに上記面状光を透過させることにより、ＬＥＤ光源モジュールは、液晶表示装置の光源として機能する。また、上記面状光源の具体的な用途の一例としては、液晶パネルとＬＥＤ光源モジュールを重ねて配置することにより、ＬＥＤ光源モジュールは液晶表示装置のバックライトとして機能する。これらの用途はあくまで一例であり、本発明に係るＬＥＤ光源モジュールは、様々な用途に種々の形態によって用いられる。 The LED light source module according to the present invention is used as a point light source of an electronic device by being configured as a relatively small module, and an elongated bar light source by arranging a plurality of LED chips on an elongated conductive support member Used as a planar light source by arranging a plurality of LED chips on a conductive support member in a matrix. As an example of a specific application of the bar-shaped light source, there is a configuration in which a planar light is emitted from the light guide plate by disposing the LED light source module at a position facing the side surface of the flat light guide plate. . The LED light source module functions as a light source of the liquid crystal display device by transmitting the planar light through the liquid crystal panel superimposed on the light guide plate. As an example of a specific application of the planar light source, the LED light source module functions as a backlight of the liquid crystal display device by arranging the liquid crystal panel and the LED light source module so as to overlap each other. These applications are merely examples, and the LED light source module according to the present invention is used in various forms for various applications.
　被覆樹脂４１０は、白色樹脂からなる構成に限定されず、第一ＬＥＤチップ３１０からの光が第二ＬＥＤチップ３２０に吸収されることを抑制しうる材質が採用できる。たとえば、被覆樹脂４１０を封止樹脂４２０の材質よりも屈折率が小である材質を採用することにより、封止樹脂４２０から被覆樹脂４１０へと光が進行する場合に、これらの界面において全反射が生じうる。このような構成によっても、第二ＬＥＤチップ３２０による光の吸収を抑制する効果が期待できる。 The coating resin 410 is not limited to a configuration made of a white resin, and a material capable of suppressing the light from the first LED chip 310 from being absorbed by the second LED chip 320 can be employed. For example, when the coating resin 410 is made of a material having a refractive index smaller than that of the sealing resin 420, when light travels from the sealing resin 420 to the coating resin 410, total reflection is performed at these interfaces. Can occur. Even with such a configuration, an effect of suppressing light absorption by the second LED chip 320 can be expected.
　以上のまとめとして、これらの実施形態にかかる構成およびそのバリエーションを以下に付記として列挙する。
　　（付記１）
　主面を有する導通支持部材と、
　上記主面側において上記導通支持部材に支持され、かつ上記導通支持部材を経由して電力が供給される第一および第二ＬＥＤチップと、
　上記導通支持部材に支持され、上記第一および第二ＬＥＤチップを囲むケースと、
　上記ケースに囲まれた領域において上記第一および第二ＬＥＤチップを覆う封止樹脂と、を備えており、
　上記第二ＬＥＤチップから発せられる光の波長は、上記第一ＬＥＤチップから発せられる光の波長よりも長く、
　上記封止樹脂と上記導通支持部材の上記主面との間に介在するとともに、上記第二ＬＥＤチップのうち上記主面が向く方向と交差する方向を向く側面の少なくとも一部を覆う被覆樹脂をさらに備える、ＬＥＤ光源モジュール。
　　（付記２）
　上記第二ＬＥＤチップは、下面電極、チップ基板、半導体層および上面電極を有し、
　上記被覆樹脂は、上記チップ基板の少なくとも一部を覆っている、付記１に記載のＬＥＤ光源モジュール。
　　（付記３）
　上記チップ基板は、ＧａＡｓからなる、付記２に記載のＬＥＤ光源モジュール。
　　（付記４）
　上記下面電極は、導通接合材を介して上記導通支持部材に接合されており、
　上記上面電極は、ワイヤを介して上記導通支持部材に導通している、付記２または３に記載のＬＥＤ光源モジュール。
　　（付記５）
　上記第一ＬＥＤチップは、青色光を発し、
　上記第二ＬＥＤチップは、赤色光を発する、付記１ないし４のいずれかに記載のＬＥＤ光源モジュール。
　　（付記６）
　上記封止樹脂は、上記第一ＬＥＤチップから発せられる光によって励起されることにより、上記第一ＬＥＤチップから発せられる光の波長とは異なり、かつ上記第二ＬＥＤチップから発せられる光の波長よりも短い波長の光を発する蛍光材料を含む、付記５に記載のＬＥＤ光源モジュール。
　　（付記７）
　上記蛍光材料は、硫化物からなる、付記６に記載のＬＥＤ光源モジュール。
　　（付記８）
　上記蛍光材料は、緑色光を発する、付記６または７に記載のＬＥＤ光源モジュール。
　　（付記９）
　上記被覆樹脂は、白色である、付記１ないし８のいずれかに記載のＬＥＤ光源モジュール。
　　（付記１０）
　上記被覆樹脂は、上記封止樹脂よりも屈折率が小である、付記１ないし８のいずれかに記載のＬＥＤ光源モジュール。
　　（付記１１）
　上記被覆樹脂と上記ケースとの接合部分のうち上記主面から最も離間した部位は、上記第一および第二ＬＥＤチップのいずれの部位よりも上記主面から離間している、付記１ないし１０のいずれかに記載のＬＥＤ光源モジュール。
　　（付記１２）
　上記基板の上記主面および上記絶縁層よりも上記主面の法線方向に位置する頂面を有する台座部を備えており、
　上記第一ＬＥＤチップは、上記台座部の上記頂面に支持されている、付記１ないし１１のいずれかに記載のＬＥＤ光源モジュール。
　　（付記１３）
　上記台座部のうち上記頂面を除く部位の少なくとも一部が、上記被覆樹脂によって覆われている、付記１２に記載のＬＥＤ光源モジュール。
　　（付記１４）
　上記導通支持部材と上記第一ＬＥＤチップとの間に介在するサブマウント基板を備えており、
　上記台座部は、上記サブマウンド基板によって構成されている、付記１２または１３に記載のＬＥＤ光源モジュール。
　　（付記１５）
　上記導通支持部材は、基材とこの基材上に形成された配線層とを有する、付記１２または１３に記載のＬＥＤ光源モジュール。
　　（付記１６）
　上記基材は、金属からなり、
　上記導通支持部材は、上記基材と上記配線層との間に介在する絶縁層を有する、付記１５に記載のＬＥＤ光源モジュール。
　　（付記１７）
　上記基材は、上記主面よりも隆起した隆起部を有し、
　上記台座部は、上記隆起部によって構成されている、付記１６に記載のＬＥＤ光源モジュール。
　　（付記１８）
　上記隆起部は、上記主面と平行である上記頂面と、この頂面および上記主面を繋ぐ傾斜面と、を有する、付記１７に記載のＬＥＤ光源モジュール。
　　（付記１９）
　上記絶縁層は、上記隆起部のうち上記頂面を露出させている、付記１７または１８に記載のＬＥＤ光源モジュール。
　　（付記２０）
　上記基材は、その厚さ方向において上記隆起部の反対側に位置し、上記厚さ方向視において上記隆起部に重なる陥没部を有する、付記１７ないし１９のいずれかに記載のＬＥＤ光源モジュール。
　　（付記２１）
　上記陥没部は、上記主面と平行である底面を有する、付記２０に記載のＬＥＤ光源モジュール。
　　（付記２２）
　上記底面は、上記厚さ方向視において上記隆起部に内包されている、付記２１に記載のＬＥＤ光源モジュール。
　　（付記２３）
　主面を有する導通支持部材と、
　上記主面に支持され、かつ上記導通支持部材を経由して電力が供給される第一および第二ＬＥＤチップと、を備えており、
　上記第一ＬＥＤチップは、上記主面と対向する方向を向く第一下面電極およびこの第一下面電極とは反対側を向く第一上面電極を有しており、
　上記第二ＬＥＤチップは、上記第一ＬＥＤチップの上記第一上面電極と同じ側を向く第二上面電極を有しており、
　上記第一ＬＥＤチップの上記第一上面電極と上記第二ＬＥＤチップの上記第二上面電極とを接続するワイヤを備える、ＬＥＤ光源モジュール。
　　（付記２４）
　上記導通支持部材は、基材とこの基材上に形成された配線層とを有する、付記２３に記載のＬＥＤ光源モジュール。
　　（付記２５）
　上記基材は、金属からなり、
　上記導通支持部材は、上記基材と上記配線層との間に介在する絶縁層を有する、付記２４に記載のＬＥＤ光源モジュール。
　　（付記２６）
　上記第二ＬＥＤチップは、上記第一ＬＥＤチップの上記第一下面電極と同じ側を向く第二下面電極を有する、付記２３ないし２５のいずれかに記載のＬＥＤ光源モジュール。
　　（付記２７）
　上記第二ＬＥＤチップは、上記第二上面電極と同じ側を向く追加の第二上面電極を有する、付記２３ないし２５のいずれかに記載のＬＥＤ光源モジュール。
　　（付記２８）
　上記主面に支持され、かつ上記導通支持部材を経由して電力が供給される第三ＬＥＤチップをさらに備えており、
　上記第三ＬＥＤチップは、上記主面と対向する方向を向く第三下面電極およびこの第三下面電極とは反対側を向く第三上面電極を有しており、
　上記第二ＬＥＤチップの上記追加の第二上面電極と上記第三ＬＥＤチップの上記第三上面電極とを接続する追加のワイヤを備えている、付記２７に記載のＬＥＤ光源モジュール。
　　（付記２９）
　上記第二ＬＥＤチップと上記導通支持部材との間に介在するサブマウント基板を備える、付記２８に記載のＬＥＤ光源モジュール。
　　（付記３０）
　上記第一および第二ＬＥＤチップを覆うとともに蛍光材料を含む封止樹脂をさらに備える、付記２３ないし２９のいずれかに記載のＬＥＤ光源モジュール。
　　（付記３１）
　上記第二ＬＥＤチップは、青色光を発する、付記３０に記載のＬＥＤ光源モジュール。
　　（付記３２）
　上記第一ＬＥＤチップは、赤色光を発する、付記３１に記載のＬＥＤ光源モジュール。
　　（付記３３）
　上記蛍光材料は、青色光によって励起されることにより緑色光を発する、付記３１または３２に記載のＬＥＤ光源モジュール。
　　（付記３４）
　上記蛍光材料は、硫化物からなる、付記３３に記載のＬＥＤ光源モジュール。
　　（付記３５）
　上記導通支持部材に支持されており、かつ上記第一および第二ＬＥＤチップを囲む反射面を有するケースをさらに備えている、付記２３ないし３４のいずれかに記載のＬＥＤ光源モジュール。
　　（付記３６）
　上記導通支持部材のうち上記反射面に囲まれた領域である内部領域の少なくとも一部と、上記第一ＬＥＤチップの側面の少なくとも一部と、を覆う被覆樹脂を備える、付記３５に記載のＬＥＤ光源モジュール。
　　（付記３７）
　上記被覆樹脂は、上記配線層のうち上記内部領域において上記第一および上記第二ＬＥＤチップから露出した部分を覆っている、付記３６に記載のＬＥＤ光源モジュール。
　　（付記３８）
　上記被覆樹脂は、白色である、付記３６または３７に記載のＬＥＤ光源モジュール。
　　（付記３９）
　上記被覆樹脂と上記ケースとの接合部分のうち上記基材の上記主面から最も離間した部位は、上記第一および第二ＬＥＤチップのいずれの部位よりも上記主面から離間している、付記３６ないし３８のいずれかに記載のＬＥＤ光源モジュール。
　　（付記４０）
　上記基材は、上記主面よりも隆起した隆起部を有しており、
　上記絶縁層は、上記基材の上記主面を覆うとともに、上記隆起部の少なくとも一部を露出させており、
　上記第二ＬＥＤチップは、上記隆起部に支持されている、付記２５に記載のＬＥＤ光源モジュール。
　　（付記４１）
　上記隆起部は、上記主面と平行である頂面と、この頂面および上記主面を繋ぐ傾斜面と、を有する、付記４０に記載のＬＥＤ光源モジュール。
　　（付記４２）
　上記絶縁層は、上記隆起部のうち上記頂面を露出させている、付記４１に記載のＬＥＤ光源モジュール。
　　（付記４３）
　上記基材は、その厚さ方向において上記隆起部の反対側に位置し、上記厚さ方向視において上記隆起部に重なる陥没部を有する、付記４２に記載のＬＥＤ光源モジュール。
　　（付記４４）
　上記陥没部は、上記主面と平行である底面を有する、付記４３に記載のＬＥＤ光源モジュール。
　　（付記４５）
　上記底面は、上記厚さ方向視において上記隆起部に内包されている、付記４４に記載のＬＥＤ光源モジュール。 As a summary of the above, the configurations and variations thereof according to these embodiments are listed as appendices below.
(Appendix 1)
A conduction support member having a main surface;
First and second LED chips supported by the conduction support member on the main surface side and supplied with power via the conduction support member;
A case supported by the conduction support member and surrounding the first and second LED chips;
Sealing resin that covers the first and second LED chips in a region surrounded by the case,
The wavelength of the light emitted from the second LED chip is longer than the wavelength of the light emitted from the first LED chip,
A coating resin that is interposed between the sealing resin and the main surface of the conduction support member and covers at least a part of a side surface of the second LED chip that faces in a direction intersecting the direction in which the main surface faces. An LED light source module further provided.
(Appendix 2)
The second LED chip has a lower surface electrode, a chip substrate, a semiconductor layer, and an upper surface electrode,
The LED light source module according to appendix 1, wherein the coating resin covers at least a part of the chip substrate.
(Appendix 3)
The LED light source module according to appendix 2, wherein the chip substrate is made of GaAs.
(Appendix 4)
The lower surface electrode is bonded to the conductive support member via a conductive bonding material,
The LED light source module according to appendix 2 or 3, wherein the upper surface electrode is electrically connected to the conduction support member via a wire.
(Appendix 5)
The first LED chip emits blue light,
The LED light source module according to any one of appendices 1 to 4, wherein the second LED chip emits red light.
(Appendix 6)
The sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and from the wavelength of the light emitted from the second LED chip. 6. The LED light source module according to appendix 5, including a fluorescent material that emits light having a short wavelength.
(Appendix 7)
The LED light source module according to appendix 6, wherein the fluorescent material is made of sulfide.
(Appendix 8)
The LED light source module according to appendix 6 or 7, wherein the fluorescent material emits green light.
(Appendix 9)
The LED light source module according to any one of appendices 1 to 8, wherein the coating resin is white.
(Appendix 10)
The LED light source module according to any one of appendices 1 to 8, wherein the coating resin has a refractive index smaller than that of the sealing resin.
(Appendix 11)
The part of the joint portion between the coating resin and the case that is farthest from the main surface is further from the main surface than any part of the first and second LED chips. The LED light source module according to any one of the above.
(Appendix 12)
A pedestal having a top surface located in a direction normal to the main surface from the main surface and the insulating layer of the substrate;
The LED light source module according to any one of appendices 1 to 11, wherein the first LED chip is supported on the top surface of the pedestal portion.
(Appendix 13)
The LED light source module according to appendix 12, wherein at least a part of the base portion excluding the top surface is covered with the coating resin.
(Appendix 14)
A submount substrate interposed between the conductive support member and the first LED chip;
The LED light source module according to appendix 12 or 13, wherein the pedestal portion is configured by the sub-mound substrate.
(Appendix 15)
The LED light source module according to appendix 12 or 13, wherein the conduction support member includes a base material and a wiring layer formed on the base material.
(Appendix 16)
The base material is made of metal,
The LED light source module according to appendix 15, wherein the conduction support member has an insulating layer interposed between the base material and the wiring layer.
(Appendix 17)
The base material has a raised portion raised from the main surface,
The LED light source module according to appendix 16, wherein the pedestal portion is configured by the raised portion.
(Appendix 18)
The LED light source module according to appendix 17, wherein the raised portion includes the top surface parallel to the main surface and an inclined surface connecting the top surface and the main surface.
(Appendix 19)
The LED light source module according to appendix 17 or 18, wherein the insulating layer exposes the top surface of the raised portion.
(Appendix 20)
20. The LED light source module according to any one of appendices 17 to 19, wherein the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
(Appendix 21)
The LED light source module according to appendix 20, wherein the depressed portion has a bottom surface that is parallel to the main surface.
(Appendix 22)
The LED light source module according to appendix 21, wherein the bottom surface is included in the raised portion in the thickness direction view.
(Appendix 23)
A conduction support member having a main surface;
First and second LED chips supported by the main surface and supplied with power via the conduction support member,
The first LED chip has a first lower surface electrode facing the main surface and a first upper surface electrode facing the opposite side of the first lower surface electrode,
The second LED chip has a second upper surface electrode facing the same side as the first upper surface electrode of the first LED chip,
An LED light source module comprising a wire connecting the first upper surface electrode of the first LED chip and the second upper surface electrode of the second LED chip.
(Appendix 24)
The LED light source module according to appendix 23, wherein the conduction support member includes a base material and a wiring layer formed on the base material.
(Appendix 25)
The base material is made of metal,
The LED light source module according to appendix 24, wherein the conduction support member has an insulating layer interposed between the base material and the wiring layer.
(Appendix 26)
26. The LED light source module according to any one of appendices 23 to 25, wherein the second LED chip has a second lower surface electrode facing the same side as the first lower surface electrode of the first LED chip.
(Appendix 27)
The LED light source module according to any one of appendices 23 to 25, wherein the second LED chip has an additional second upper surface electrode facing the same side as the second upper surface electrode.
(Appendix 28)
Further comprising a third LED chip supported by the main surface and supplied with power via the conduction support member;
The third LED chip has a third lower surface electrode facing the main surface and a third upper surface electrode facing the opposite side of the third lower surface electrode,
28. The LED light source module according to appendix 27, comprising an additional wire connecting the additional second upper surface electrode of the second LED chip and the third upper surface electrode of the third LED chip.
(Appendix 29)
29. The LED light source module according to appendix 28, comprising a submount substrate interposed between the second LED chip and the conduction support member.
(Appendix 30)
30. The LED light source module according to any one of appendices 23 to 29, further comprising a sealing resin that covers the first and second LED chips and includes a fluorescent material.
(Appendix 31)
The LED light source module according to appendix 30, wherein the second LED chip emits blue light.
(Appendix 32)
32. The LED light source module according to appendix 31, wherein the first LED chip emits red light.
(Appendix 33)
The LED light source module according to appendix 31 or 32, wherein the fluorescent material emits green light when excited by blue light.
(Appendix 34)
34. The LED light source module according to appendix 33, wherein the fluorescent material is made of sulfide.
(Appendix 35)
35. The LED light source module according to any one of appendices 23 to 34, further comprising a case supported by the conduction support member and having a reflective surface surrounding the first and second LED chips.
(Appendix 36)
36. The LED according to appendix 35, comprising a coating resin that covers at least a part of an inner region that is a region surrounded by the reflection surface of the conduction support member and at least a part of a side surface of the first LED chip. Light source module.
(Appendix 37)
37. The LED light source module according to appendix 36, wherein the coating resin covers a portion of the wiring layer exposed from the first and second LED chips in the internal region.
(Appendix 38)
The LED light source module according to appendix 36 or 37, wherein the coating resin is white.
(Appendix 39)
The portion of the joint portion between the coating resin and the case that is the most distant from the main surface of the base material is further away from the main surface than any portion of the first and second LED chips. The LED light source module according to any one of 36 to 38.
(Appendix 40)
The base material has a raised portion raised from the main surface,
The insulating layer covers the main surface of the base material and exposes at least a part of the raised portion,
The LED light source module according to appendix 25, wherein the second LED chip is supported by the raised portion.
(Appendix 41)
41. The LED light source module according to appendix 40, wherein the raised portion has a top surface that is parallel to the main surface and an inclined surface that connects the top surface and the main surface.
(Appendix 42)
42. The LED light source module according to appendix 41, wherein the insulating layer exposes the top surface of the raised portion.
(Appendix 43)
43. The LED light source module according to appendix 42, wherein the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion in the thickness direction view.
(Appendix 44)
44. The LED light source module according to appendix 43, wherein the depressed portion has a bottom surface that is parallel to the main surface.
(Appendix 45)
45. The LED light source module according to appendix 44, wherein the bottom surface is included in the raised portion when viewed in the thickness direction.

Claims (23)

  1. 　主面を有する導通支持部材と、
    　上記主面側において上記導通支持部材に支持され、かつ上記導通支持部材を経由して電力が供給される第一および第二ＬＥＤチップと、
    　上記導通支持部材に支持され、上記第一および第二ＬＥＤチップを囲むケースと、
    　上記ケースに囲まれた領域において上記第一および第二ＬＥＤチップを覆う封止樹脂と、を備えており、
    　上記第二ＬＥＤチップから発せられる光の波長は、上記第一ＬＥＤチップから発せられる光の波長よりも長く、
    　上記第二ＬＥＤチップは、上記第一ＬＥＤチップからの光を透過する材質からなる第二チップ基板と、このチップ基板上に積層された第二半導体層と、を有する、ＬＥＤ光源モジュール。     A conduction support member having a main surface;
    First and second LED chips supported by the conduction support member on the main surface side and supplied with power via the conduction support member;
    A case supported by the conduction support member and surrounding the first and second LED chips;
    Sealing resin that covers the first and second LED chips in a region surrounded by the case,
    The wavelength of the light emitted from the second LED chip is longer than the wavelength of the light emitted from the first LED chip,
    The second LED chip is an LED light source module including a second chip substrate made of a material that transmits light from the first LED chip, and a second semiconductor layer stacked on the chip substrate.
  2. 　上記第二チップ基板は、サファイアからなる、請求項１に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 1, wherein the second chip substrate is made of sapphire.
  3. 　上記第二チップ基板は、上記主面が向く方向において上記第一ＬＥＤチップと重なる位置にある、請求項１または２に記載のＬＥＤ光源モジュール。 3. The LED light source module according to claim 1, wherein the second chip substrate is in a position overlapping the first LED chip in a direction in which the main surface faces.
  4. 　上記第二ＬＥＤチップは、赤色光を発する、請求項１ないし３のいずれかに記載のＬＥＤ光源モジュール。 The LED light source module according to any one of claims 1 to 3, wherein the second LED chip emits red light.
  5. 　上記第一ＬＥＤチップは、青色光を発する、請求項４に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 4, wherein the first LED chip emits blue light.
  6. 　上記第一ＬＥＤチップは、サファイアまたはＧａＮからなる第一チップ基板と、この第一チップ基板上に積層された第一半導体層と、を有する、請求項５に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 5, wherein the first LED chip has a first chip substrate made of sapphire or GaN, and a first semiconductor layer stacked on the first chip substrate.
  7. 　上記第二チップ基板は、上記主面が向く方向において上記第一チップ基板と重なる位置にある、請求項６に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 6, wherein the second chip substrate is in a position overlapping with the first chip substrate in a direction in which the main surface faces.
  8. 　上記第一ＬＥＤチップは、上記第一半導体層上に形成された２つの第一上面電極を有する、請求項６または７に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 6 or 7, wherein the first LED chip has two first upper surface electrodes formed on the first semiconductor layer.
  9. 　上記第二ＬＥＤチップは、上記第二半導体層上に形成された２つの第二上面電極を有する、請求項８に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 8, wherein the second LED chip has two second upper surface electrodes formed on the second semiconductor layer.
  10. 　上記封止樹脂は、上記第一ＬＥＤチップから発せられる光によって励起されることにより、上記第一ＬＥＤチップから発せられる光の波長とは異なり、かつ上記第二ＬＥＤチップから発せられる光の波長よりも短い波長の光を発する蛍光材料を含む、請求項４ないし９のいずれかに記載のＬＥＤ光源モジュール。 The sealing resin is different from the wavelength of the light emitted from the first LED chip by being excited by the light emitted from the first LED chip, and from the wavelength of the light emitted from the second LED chip. The LED light source module according to claim 4, further comprising a fluorescent material that emits light having a short wavelength.
  11. 　上記蛍光材料は、硫化物からなる、請求項１０に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 10, wherein the fluorescent material is made of sulfide.
  12. 　上記蛍光材料は、緑色光を発する、請求項１１に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 11, wherein the fluorescent material emits green light.
  13. 　上記第一ＬＥＤチップと上記導通支持部材との間に介在する第一サブマウント基板と、
    　上記第二ＬＥＤチップと上記導通支持部材との間に介在する第二サブマウント基板と、
    　上記封止樹脂と上記導通支持部材の上記主面との間に介在するとともに、上記第一サブマウント基板および上記第二サブマウント基板それぞれのうち上記主面が向く方向と交差する方向を向く側面の少なくとも一部を覆う被覆樹脂と、
    をさらに備える、請求項１ないし１２のいずれかに記載のＬＥＤ光源モジュール。     A first submount substrate interposed between the first LED chip and the conduction support member;
    A second submount substrate interposed between the second LED chip and the conduction support member;
    A side surface that is interposed between the sealing resin and the main surface of the conductive support member and faces the direction intersecting with the direction in which the main surface faces in each of the first submount substrate and the second submount substrate. Coating resin covering at least a part of
    The LED light source module according to claim 1, further comprising:
  14. 　上記被覆樹脂は、白色である、請求項１３に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 13, wherein the coating resin is white.
  15. 　上記被覆樹脂と上記ケースとの接合部分のうち上記主面から最も離間した部位は、上記第一および第二ＬＥＤチップのいずれの部位よりも上記主面から離間している、請求項１３または１４に記載のＬＥＤ光源モジュール。 The part most distant from the said main surface among the junction parts of the said coating resin and the said case is spaced apart from the said main surface rather than any part of said 1st and 2nd LED chip. LED light source module of description.
  16. 　上記導通支持部材は、基材とこの基材上に形成された配線層とを有する、請求項１ないし１５のいずれかに記載のＬＥＤ光源モジュール。 The LED light source module according to any one of claims 1 to 15, wherein the conduction support member includes a base material and a wiring layer formed on the base material.
  17. 　上記基材は、金属からなり、
    　上記導通支持部材は、上記基材と上記配線層との間に介在する絶縁層を有する、請求項１６に記載のＬＥＤ光源モジュール。     The base material is made of metal,
    The LED light source module according to claim 16, wherein the conduction support member has an insulating layer interposed between the base material and the wiring layer.
  18. 　上記基材は、上記主面よりも隆起した隆起部を有し、
    　上記第一および上記第二ＬＥＤチップは、上記隆起部によって支持されている、請求項１７に記載のＬＥＤ光源モジュール。     The base material has a raised portion raised from the main surface,
    The LED light source module according to claim 17, wherein the first and second LED chips are supported by the raised portion.
  19. 　上記隆起部は、上記主面と平行である頂面と、この頂面および上記主面を繋ぐ傾斜面と、を有しており、
    　上記第一および上記第二ＬＥＤチップは、上記頂面に支持されている、請求項１８に記載のＬＥＤ光源モジュール。     The raised portion has a top surface that is parallel to the main surface, and an inclined surface that connects the top surface and the main surface,
    The LED light source module according to claim 18, wherein the first and second LED chips are supported on the top surface.
  20. 　上記絶縁層は、上記隆起部のうち上記頂面を露出させている、請求項１９に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 19, wherein the insulating layer exposes the top surface of the raised portion.
  21. 　上記基材は、その厚さ方向において上記隆起部の反対側に位置し、上記厚さ方向視において上記隆起部に重なる陥没部を有する、請求項２０に記載のＬＥＤ光源モジュール。 21. The LED light source module according to claim 20, wherein the base material has a depressed portion that is located on the opposite side of the raised portion in the thickness direction and overlaps the raised portion when viewed in the thickness direction.
  22. 　上記陥没部は、上記主面と平行である底面を有する、請求項２１に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 21, wherein the depressed portion has a bottom surface parallel to the main surface.
  23. 　上記底面は、上記厚さ方向視において上記隆起部に内包されている、請求項２２に記載のＬＥＤ光源モジュール。 The LED light source module according to claim 22, wherein the bottom surface is included in the raised portion when viewed in the thickness direction.
PCT/JP2014/065750 2013-06-18 2014-06-13 Led light source module WO2014203825A1 (en)

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JP2013127316A JP6192377B2 (en) 2013-06-18 2013-06-18 LED light source module
JP2013-127316 2013-06-18
JP2013134090A JP2015012024A (en) 2013-06-26 2013-06-26 Led light source module
JP2013-134089 2013-06-26
JP2013-134090 2013-06-26
JP2013134089A JP2015012023A (en) 2013-06-26 2013-06-26 Led light source module

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JP2002158373A (en) * 2000-11-07 2002-05-31 Kokuren Koden Kagi Kofun Yugenkoshi Light emitting diode and method of manufacturing the same
JP2006245443A (en) * 2005-03-07 2006-09-14 Citizen Electronics Co Ltd Light emitting device and illumination device
JP2008053691A (en) * 2006-08-25 2008-03-06 Samsung Electro-Mechanics Co Ltd White led module
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JP2013120778A (en) * 2011-12-06 2013-06-17 Rohm Co Ltd Light emitting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158373A (en) * 2000-11-07 2002-05-31 Kokuren Koden Kagi Kofun Yugenkoshi Light emitting diode and method of manufacturing the same
JP2006245443A (en) * 2005-03-07 2006-09-14 Citizen Electronics Co Ltd Light emitting device and illumination device
JP2008053691A (en) * 2006-08-25 2008-03-06 Samsung Electro-Mechanics Co Ltd White led module
JP2012023188A (en) * 2010-07-14 2012-02-02 Iwatani Internatl Corp Led package device
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